TWI570824B - Pickup apparatus and pickup method for semiconductor dies - Google Patents

Pickup apparatus and pickup method for semiconductor dies Download PDF

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TWI570824B
TWI570824B TW104100134A TW104100134A TWI570824B TW I570824 B TWI570824 B TW I570824B TW 104100134 A TW104100134 A TW 104100134A TW 104100134 A TW104100134 A TW 104100134A TW I570824 B TWI570824 B TW I570824B
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pressure
adsorption
opening
semiconductor die
switched
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TW201533823A (en
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長野一昭
片山善文
豊田宏樹
石塚武
福本真介
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新川股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715—Changing the direction of the conveying path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Die Bonding (AREA)
  • Wire Bonding (AREA)

Description

半導體晶粒的拾取裝置以及拾取方法 Semiconductor die picking device and picking method

本發明是有關於一種用於接合(bonding)裝置的半導體晶粒的拾取(pickup)裝置的結構以及拾取方法。 The present invention relates to a structure of a pickup device for a semiconductor die for bonding devices and a picking method.

半導體晶粒是將6吋(inch)或8吋大小的晶圓(wafer)切斷成規定的大小而製造。在切斷時，在背面貼附切割片材(dicing sheet)，並自表面側藉由切割鋸等來切斷晶圓，以免切斷後的半導體晶粒七零八落。此時，貼附於背面的切割片材成為被稍許切入但未被切斷且保持著各半導體晶粒的狀態。然後，被切斷的各半導體晶粒被逐個自切割片材拾取而送往晶粒接合(die bongding)等下個步驟。 The semiconductor die is manufactured by cutting a wafer of 6 inches or 8 inches into a predetermined size. At the time of cutting, a dicing sheet is attached to the back surface, and the wafer is cut by a dicing saw or the like from the surface side so as not to fall off the semiconductor crystal grains after the cutting. At this time, the cut sheet attached to the back surface is in a state of being slightly cut but not cut and holding the respective semiconductor crystal grains. Then, the cut semiconductor dies are picked up from the cut sheets one by one and sent to the next step such as die bonding.

作為自切割片材拾取半導體晶粒的方法，提出有下述方法：在使切割片材吸附於圓板狀的吸附板的表面，並使半導體晶粒吸附於吸頭(collet)的狀態下，利用配置於吸附板中央部的頂塊(block)來頂起半導體晶粒，並且使吸頭上升，從而自切割片材拾取半導體晶粒(例如參照專利文獻1的圖9至圖23)。在使半導體晶粒自切割片材剝離時，有效的做法是，首先使半導體晶粒 的周邊部剝離，然後使半導體晶粒的中央部剝離，因此在專利文獻1所揭示的以往技術中，採用下述方法，即：將頂塊分為頂起半導體晶粒的周圍部分的塊、頂起半導體晶粒的中央的塊、與頂起半導體晶粒的中間的塊這3個塊，首先使3個塊上升至規定高度後，使中間與中央的塊上升得高於周邊的塊，最後使中央的塊上升得高於中間的塊。 As a method of picking up a semiconductor crystal grain from a self-cut sheet, there is proposed a method in which a cut sheet is adsorbed on a surface of a disk-shaped adsorption plate, and a semiconductor crystal grain is adsorbed to a collet. The semiconductor die is lifted by a block disposed at the center of the suction plate, and the tip is raised to pick up the semiconductor die from the cut sheet (see, for example, FIGS. 9 to 23 of Patent Document 1). When the semiconductor die is peeled off from the cut sheet, it is effective to first make the semiconductor die Since the peripheral portion is peeled off and the central portion of the semiconductor crystal grain is peeled off, the prior art disclosed in Patent Document 1 employs a method in which the top block is divided into blocks that lift up the peripheral portion of the semiconductor die, The three blocks that lift up the center block of the semiconductor die and the block that pushes up the middle of the semiconductor die first raise the three blocks to a predetermined height, and then raise the middle and center blocks higher than the surrounding blocks. Finally, the central block is raised higher than the middle block.

而且，亦提出有下述方法：在使切割片材吸附於圓板狀的頂帽(ejector cap)的表面，並使半導體晶粒吸附於吸頭的狀態下，使吸頭以及周邊、中間、中央的各頂塊上升至高於頂帽表面的規定高度後，使吸頭的高度仍保持該高度，並使頂塊依照周圍的頂塊、中間的頂塊的順序下降至頂帽表面之下的位置，從而自半導體晶粒剝離切割片材(例如參照專利文獻2)。 Further, there has been proposed a method in which a cut sheet is adsorbed on a surface of a disk-shaped ejector cap, and a semiconductor crystal grain is adsorbed to the tip, so that the tip and the periphery, the middle, After the central top blocks rise above the specified height of the top hat surface, the height of the suction head is maintained at the height, and the top block is lowered to the lower surface of the top hat according to the order of the surrounding top block and the middle top block. The position is such that the cut sheet is peeled off from the semiconductor die (for example, refer to Patent Document 2).

在利用專利文獻1、專利文獻2中揭示的方法來使切割片材自半導體晶粒剝離的情況下，如專利文獻1的圖40、圖42、圖44、專利文獻2的圖4A至圖4D、圖5A至圖5D所揭示般，在半導體晶粒剝離之前，半導體晶粒有時會在仍貼附於切割片材的狀態下與切割片材一同彎曲變形。若在半導體晶粒發生彎曲變形的狀態下繼續進行切割片材的剝離動作，則半導體晶粒有時會發生破損，因此提出有下述方法：如專利文獻1的圖31所揭示般，根據來自吸頭的抽吸空氣的流量變化來檢測半導體晶粒的彎曲，並如專利文獻1的圖43所揭示般，在檢測到吸氣流量時，判斷為半導體晶粒已發生變形而使頂塊暫時降下後，再次使頂塊上升。 In the case where the dicing sheet is peeled off from the semiconductor crystal by the method disclosed in Patent Document 1 and Patent Document 2, as shown in FIG. 40, FIG. 42, FIG. 44 of Patent Document 1, and FIG. 4A to FIG. 4D of Patent Document 2 As disclosed in FIGS. 5A to 5D, before the semiconductor crystal grains are peeled off, the semiconductor crystal grains are sometimes bent and deformed together with the cut sheets while still attached to the cut sheets. When the peeling operation of the dicing sheet is continued in a state in which the semiconductor crystal grains are bent and deformed, the semiconductor crystal grains may be damaged. Therefore, there is proposed a method in which, as disclosed in FIG. 31 of Patent Document 1, The flow rate of the suction air of the suction head is changed to detect the bending of the semiconductor crystal grain, and as disclosed in FIG. 43 of Patent Document 1, when the intake air flow rate is detected, it is determined that the semiconductor crystal grain has been deformed to temporarily temporarily block the top block. After lowering, raise the top block again.

現有技術文獻 Prior art literature

專利文獻 Patent literature

專利文獻1：日本專利第4945339號公報 Patent Document 1: Japanese Patent No. 4945339

專利文獻2：美國專利第8092645號說明書 Patent Document 2: US Patent No. 8092645

然而，近年來，半導體晶粒變得非常薄，例如亦有20μm左右的半導體晶粒。另一方面，切割片材的厚度為100μm左右，因此切割片材的厚度亦達到半導體晶粒的厚度的4倍~5倍。若欲使此種薄的半導體晶粒自切割片材剝離，則追隨於切割片材的變形的半導體晶粒的變形容易變得更加顯著地發生，在專利文獻1、專利文獻2所揭示的以往技術中，存在下述問題，即，當自切割片材拾取半導體晶粒時，半導體晶粒發生損傷的情況變多。 However, in recent years, semiconductor crystal grains have become very thin, for example, there are also semiconductor crystal grains of about 20 μm. On the other hand, since the thickness of the cut sheet is about 100 μm, the thickness of the cut sheet also reaches 4 to 5 times the thickness of the semiconductor crystal grain. When such a thin semiconductor crystal grain is to be peeled off from the dicing sheet, deformation of the semiconductor crystal grain which follows the deformation of the dicing sheet is likely to occur more remarkably, and the prior art disclosed in Patent Document 1 and Patent Document 2 In the art, there is a problem that the semiconductor crystal grains are damaged when the semiconductor wafer is picked up from the dicing sheet.

因此，本發明的目的在於，抑制半導體晶粒的損傷的發生而有效地拾取半導體晶粒。 Accordingly, an object of the present invention is to effectively pick up semiconductor crystal grains by suppressing occurrence of damage of semiconductor crystal grains.

本發明的半導體晶粒的拾取裝置的特徵在於包括：平台，包含吸附面，該吸附面吸附切割片材的背面，所述切割片材在表面貼附有要拾取的半導體晶粒；階差面形成機構，包含多個移動元件，形成相對於吸附面的階差面，所述多個移動元件配置在平台的吸附面上所設的開口內，且前端面在高於吸附面的第1位置與低於第1位置的第2位置之間移動；以及開口壓力切換機 構，在接近真空的第1壓力與接近大氣壓的第2壓力之間切換開口的開口壓力，且在拾取半導體晶粒時，每當將開口壓力自第1壓力切換為第2壓力時，使至少1個移動元件自第1位置移動至第2位置。 The semiconductor wafer pick-up device of the present invention is characterized by comprising: a platform comprising an adsorption surface, the adsorption surface adsorbing a back surface of the cut sheet, the cut sheet having a semiconductor crystal grain to be picked up on the surface; a step surface a forming mechanism comprising a plurality of moving elements forming a step surface with respect to the adsorption surface, wherein the plurality of moving elements are disposed in an opening provided on the adsorption surface of the platform, and the front end surface is at a first position higher than the adsorption surface Movement between the second position lower than the first position; and the opening pressure switching machine And switching the opening pressure of the opening between the first pressure close to the vacuum and the second pressure close to the atmospheric pressure, and when the semiconductor die is picked up, the opening pressure is switched from the first pressure to the second pressure, so that at least One moving element moves from the first position to the second position.

本發明的半導體晶粒的拾取裝置中，採用下述方案亦較佳，即，半導體晶粒的拾取裝置包括：吸附壓力切換機構，在接近真空的第3壓力與接近大氣壓的第4壓力之間切換吸附面的吸附壓力，且在拾取半導體晶粒時，在將吸附壓力自第4壓力切換為第3壓力的狀態下，切換開口壓力。 In the semiconductor wafer pick-up device of the present invention, it is preferable that the semiconductor die pick-up device includes: an adsorption pressure switching mechanism between a third pressure close to the vacuum and a fourth pressure close to the atmospheric pressure. The adsorption pressure of the adsorption surface is switched, and when the semiconductor crystal grain is picked up, the opening pressure is switched in a state where the adsorption pressure is switched from the fourth pressure to the third pressure.

本發明的半導體晶粒的拾取裝置中，採用下述方案亦較佳，即，在拾取半導體晶粒時，將吸附壓力保持為第3壓力而切換開口壓力。 In the semiconductor wafer pick-up device of the present invention, it is preferable to switch the opening pressure by maintaining the adsorption pressure at the third pressure while picking up the semiconductor crystal grains.

本發明的半導體晶粒的拾取裝置中，採用下述方案亦較佳，即，在拾取半導體晶粒時，在將吸附壓力自第4壓力切換為第3壓力的狀態下將開口壓力自第2壓力切換為第1壓力之後，將吸附壓力自第3壓力切換為第4壓力，並且每當將開口壓力自第1壓力切換為第2壓力時，使至少1個移動元件自第1位置移動至第2位置。 In the semiconductor wafer pick-up device of the present invention, it is preferable that the opening pressure is from the second state in the state where the adsorption pressure is switched from the fourth pressure to the third pressure when the semiconductor crystal grain is picked up. After the pressure is switched to the first pressure, the adsorption pressure is switched from the third pressure to the fourth pressure, and each time the opening pressure is switched from the first pressure to the second pressure, at least one moving element is moved from the first position to the second pressure. 2nd position.

本發明的半導體晶粒的拾取裝置中，採用下述方案亦較佳，即，半導體晶粒的拾取裝置包括剝離檢測部件，該剝離檢測部件對與自第1位置移動至第2位置的移動元件的前端面相向的半導體晶粒的一部分是否自切割片材的表面發生了剝離進行檢 測，在由剝離檢測部件檢測出半導體晶粒的一部分未自切割片材發生剝離的情況下，不使移動元件自第1位置移動至第2位置，而將開口壓力自第1壓力切換為第2壓力之後，將開口壓力再次自第2壓力切換為第1壓力。 In the semiconductor wafer pick-up device of the present invention, it is preferable that the semiconductor wafer pick-up device includes a peeling detecting member that moves the moving member from the first position to the second position. Whether a part of the semiconductor die facing the front end face is peeled off from the surface of the cut sheet When it is detected by the peeling detecting means that a part of the semiconductor crystal grain is not peeled off from the cut sheet, the opening pressure is switched from the first pressure to the second position without moving the moving element from the first position to the second position. After the 2 pressure, the opening pressure is again switched from the second pressure to the first pressure.

本發明的半導體晶粒的拾取裝置中，採用下述方案亦較佳，即，半導體晶粒的拾取裝置包括：吸頭，吸附半導體晶粒；抽吸機構，連接於吸頭，自吸頭的表面抽吸空氣；以及流量感測器，對抽吸機構的抽吸空氣流量進行檢測，剝離檢測部件在對由流量感測器檢測出的抽吸空氣流量信號進行微分所得的微分信號超過規定的臨限值範圍的次數為偶數的情況下，判斷為發生了剝離，在次數為奇數的情況下，判斷為未發生剝離。 In the semiconductor wafer pick-up device of the present invention, it is preferable that the semiconductor wafer pick-up device comprises: a suction head for adsorbing semiconductor crystal grains; a suction mechanism connected to the suction head and the self-suction head; a surface suction air; and a flow sensor for detecting a suction air flow rate of the suction mechanism, the differential signal obtained by the peeling detection component differentiating the suction air flow signal detected by the flow sensor exceeds a prescribed value When the number of times of the threshold range is an even number, it is determined that peeling has occurred, and when the number of times is an odd number, it is determined that peeling has not occurred.

本發明的半導體晶粒的拾取裝置中，採用下述方案亦較佳，即，半導體晶粒的拾取裝置包括片材位移檢測感測器，該片材位移檢測感測器對平台的開口內表面與階差面形成機構外周面之間的切割片材相對於吸附面的接離方向的位移進行檢測，將吸附壓力自第4壓力切換為第3壓力後，在經過規定的時間後，將開口壓力自第2壓力切換為第1壓力時，在由片材位移檢測感測器所檢測出的片材位移為規定的臨限值以下的情況下，將吸附壓力自第3壓力切換為第4壓力，並且將開口壓力自第1壓力切換為第2壓力後，再次將吸附壓力自第4壓力切換為第3壓力後，在經過規定的時間後將開口壓力自第2壓力切換為第1壓力，以使平台的開口內表面與階差面形成機構外周面之間的切割片材自 半導體晶粒剝離，且採用下述方案亦較佳，即，片材位移檢測感測器是使用相對於切割片材的透光率為0%至30%的區域的波長的光來作為光源，或者採用下述方案亦較佳，即，片材位移檢測感測器是使用將0nm至300nm的短波長的發光二極體(Light Emitting Diode，LED)作為光源的反射型光纖(fiber)。 In the semiconductor wafer pick-up device of the present invention, it is preferable that the semiconductor wafer pick-up device includes a sheet displacement detecting sensor that faces the open inner surface of the stage The displacement of the cut sheet between the outer peripheral surface of the step surface forming mechanism and the suction surface is detected, and the adsorption pressure is switched from the fourth pressure to the third pressure, and after a predetermined period of time, the opening is opened. When the pressure is switched from the second pressure to the first pressure, when the sheet displacement detected by the sheet displacement detecting sensor is equal to or less than a predetermined threshold value, the adsorption pressure is switched from the third pressure to the fourth pressure. After the pressure is switched from the first pressure to the second pressure, the adsorption pressure is switched from the fourth pressure to the third pressure again, and after the predetermined time elapses, the opening pressure is switched from the second pressure to the first pressure. a cutting sheet between the open inner surface of the platform and the outer peripheral surface of the step surface forming mechanism The semiconductor crystal grain is peeled off, and it is also preferable that the sheet displacement detecting sensor uses light having a wavelength of a region of 0% to 30% with respect to the light transmittance of the cut sheet as a light source, Alternatively, it is preferable that the sheet displacement detecting sensor is a reflective fiber using a short-wavelength light emitting diode (LED) of 0 nm to 300 nm as a light source.

本發明的半導體晶粒的拾取裝置中，採用下述方案亦較佳，即，階差面形成機構包括：柱狀移動元件，配置於中心；多個環狀移動元件，在柱狀移動元件的周圍配置成襯套狀；以及滑塊，在平台的開口內，在沿著吸附面的方向上移動，各環狀移動元件具備各傾斜面，所述各傾斜面與滑塊接觸，藉由滑塊的移動而使各環狀移動元件在第1位置與第2位置之間移動，外周側的環狀移動元件的傾斜面與內周側的環狀移動元件的傾斜面是以下述方式而在滑塊的移動方向上偏離地配置，即，當滑塊移動時，外周側的環狀移動元件的前端面先於內周側的環狀移動元件的前端面而自第1位置移動至第2位置。 In the semiconductor wafer pick-up device of the present invention, it is preferable that the step surface forming mechanism includes: a columnar moving element disposed at the center; and a plurality of annular moving elements in the columnar moving element. The periphery is disposed in a bush shape; and the slider moves in a direction along the adsorption surface in the opening of the platform, and each of the annular moving elements is provided with each inclined surface, and the inclined surfaces are in contact with the slider by sliding The movement of the block causes each of the annular moving elements to move between the first position and the second position, and the inclined surface of the annular moving element on the outer peripheral side and the inclined surface of the annular moving element on the inner peripheral side are in the following manner When the slider moves, the front end surface of the annular moving element on the outer peripheral side moves from the first position to the second position before the front end surface of the annular moving element on the inner circumference side. position.

本發明的半導體晶粒的拾取裝置中，採用下述方案亦較佳，即，柱狀移動元件具備傾斜面，該傾斜面與滑塊接觸，藉由滑塊的移動來使柱狀移動元件在第1位置與第2位置之間移動，且該傾斜面以下述方式而在滑塊的移動方向上偏離地配置，即，當滑塊移動時，內周側的環狀移動元件的前端面先於柱狀移動元件的前端面而自第1位置移動至第2位置。 In the semiconductor wafer pick-up device of the present invention, it is preferable that the columnar moving element has an inclined surface which is in contact with the slider, and the columnar moving element is moved by the movement of the slider. The first position moves between the first position and the second position, and the inclined surface is disposed offset in the moving direction of the slider in such a manner that the front end surface of the annular moving element on the inner circumference side is first when the slider moves The front end surface of the columnar moving element is moved from the first position to the second position.

本發明的半導體晶粒的拾取裝置中，採用下述方案亦較 佳，即，階差面形成機構包括：滑塊，在平台的開口內，在沿著吸附面的方向上移動；以及多個板狀移動元件，在滑塊的移動方向上重疊配置，各板狀移動元件具備各傾斜面，所述各傾斜面與滑塊接觸，藉由滑塊的移動來使各板狀移動元件在第1位置與第2位置之間移動，各板狀移動元件的各傾斜面是以下述方式而在滑塊的移動方向上偏離地配置，即，各板狀移動元件沿著滑塊的移動方向而自第1位置依序移動至第2位置。 In the pick-up device for a semiconductor die of the present invention, the following scheme is also adopted. Preferably, the step surface forming mechanism comprises: a slider that moves in a direction along the adsorption surface in the opening of the platform; and a plurality of plate-shaped moving elements that are arranged in an overlapping manner in the moving direction of the slider, each plate The movable element includes each inclined surface, and each of the inclined surfaces is in contact with the slider, and each of the plate-shaped moving elements is moved between the first position and the second position by movement of the slider, and each of the plate-shaped moving elements The inclined surface is disposed to be displaced in the moving direction of the slider in such a manner that each of the plate-shaped moving elements sequentially moves from the first position to the second position along the moving direction of the slider.

本發明的半導體晶粒的拾取方法的特徵在於包括：準備半導體晶粒的拾取裝置的步驟，該半導體晶粒的拾取裝置包括平台、階差面形成機構、開口壓力切換機構以及吸附壓力切換機構，所述平台包含吸附面，該吸附面吸附切割片材的背面，所述切割片材在表面貼附有要拾取的半導體晶粒，所述階差面形成機構包含多個移動元件，形成相對於吸附面的階差面，所述多個移動元件配置在平台的吸附面上所設的開口內，且前端面在高於吸附面的第1位置與低於第1位置的第2位置之間移動，所述開口壓力切換機構在接近真空的第1壓力與接近大氣壓的第2壓力之間切換開口的開口壓力，所述吸附壓力切換機構在接近真空的第3壓力與接近大氣壓的第4壓力之間切換吸附面的吸附壓力；對位步驟，將階差面形成機構的各移動元件的各前端面作為第1位置，以要拾取的半導體晶粒處於階差面形成機構的階差面正上方的方式來使平台在沿著吸附面的方向上移動；第1剝離步驟，將吸附壓力自第4壓力切換為第3壓力後，在經過規定的時間後，將開 口壓力自第2壓力切換為第1壓力，以使平台的開口內表面與階差面形成機構外周面之間的切割片材自半導體晶粒剝離；以及第2剝離步驟，在將吸附壓力保持為第3壓力的狀態下，每當將開口壓力自第1壓力切換為第2壓力時，使至少1個移動元件自第1位置移動至第2位置，從而使與該移動元件的前端面相向的半導體晶粒的一部分自切割片材的表面剝離。而且，採用下述方案亦較佳，即，開口壓力切換機構在最先使移動元件自第1位置移動至第2位置之前，在第1壓力與第2壓力之間多次切換開口壓力。 The semiconductor wafer pick-up method of the present invention is characterized by comprising: a step of preparing a pick-up device for a semiconductor die, the pick-up device of the semiconductor die comprising a stage, a step surface forming mechanism, an opening pressure switching mechanism, and an adsorption pressure switching mechanism, The platform includes an adsorption surface that adsorbs a back surface of the cut sheet, the cut sheet is attached with a semiconductor die to be picked up on the surface, and the step surface forming mechanism includes a plurality of moving elements, which are formed in relation to a step surface of the adsorption surface, wherein the plurality of moving elements are disposed in an opening provided in the adsorption surface of the platform, and the front end surface is between a first position higher than the adsorption surface and a second position lower than the first position Moving, the opening pressure switching mechanism switches the opening pressure of the opening between a first pressure close to the vacuum and a second pressure close to the atmospheric pressure, the adsorption pressure switching mechanism being at a third pressure close to the vacuum and a fourth pressure close to the atmospheric pressure Switching the adsorption pressure of the adsorption surface; in the aligning step, the front end faces of the moving elements of the step surface forming mechanism are taken as the first position to be picked up The conductor crystal grain is moved directly in the direction along the adsorption surface by the step surface of the step surface forming mechanism. In the first peeling step, after the adsorption pressure is switched from the fourth pressure to the third pressure, After a stipulated time, it will open The port pressure is switched from the second pressure to the first pressure so that the cut sheet between the open inner surface of the platform and the outer peripheral surface of the step surface forming mechanism is peeled off from the semiconductor die; and the second peeling step is to maintain the adsorption pressure In the state of the third pressure, when the opening pressure is switched from the first pressure to the second pressure, at least one moving element is moved from the first position to the second position, and the front end surface of the moving element is opposed to each other. A portion of the semiconductor die is peeled off from the surface of the cut sheet. Further, it is preferable that the opening pressure switching mechanism switches the opening pressure a plurality of times between the first pressure and the second pressure before moving the moving element from the first position to the second position first.

本發明的半導體晶粒的拾取方法的特徵在於包括：準備半導體晶粒的拾取裝置的步驟，該半導體晶粒的拾取裝置包括平台、階差面形成機構、開口壓力切換機構以及吸附壓力切換機構，所述平台包含吸附面，該吸附面吸附切割片材的背面，所述切割片材在表面貼附有要拾取的半導體晶粒，所述階差面形成機構包含多個移動元件，形成相對於吸附面的階差面，所述多個移動元件配置在平台的吸附面上所設的開口內，且前端面在高於吸附面的第1位置與低於第1位置的第2位置之間移動，所述開口壓力切換機構在接近真空的第1壓力與接近大氣壓的第2壓力之間切換開口的開口壓力，所述吸附壓力切換機構在接近真空的第3壓力與接近大氣壓的第4壓力之間切換吸附面的吸附壓力；對位步驟，將階差面形成機構的各移動元件的各前端面作為第1位置，以要拾取的半導體晶粒處於階差面形成機構的階差面正上方的方式來使平台在沿著吸附面的方向上移動；第1剝離步驟，將吸附 壓力自第4壓力切換為第3壓力後，在經過規定的時間後，將開口壓力自第2壓力切換為第1壓力，以使平台的開口內表面與階差面形成機構外周面之間的切割片材自半導體晶粒剝離；以及第3剝離步驟，在將吸附壓力自第4壓力切換為第3壓力的狀態下，將開口壓力自第2壓力切換為第1壓力後，將吸附壓力自第3壓力切換為第4壓力，並且每當將開口壓力自第1壓力切換為第2壓力時，使至少1個移動元件自第1位置移動至第2位置，以使與該移動元件的前端面相向的半導體晶粒的一部分自切割片材的表面剝離。而且，採用下述方案亦較佳，即，開口壓力切換機構在最先使移動元件自第1位置移動至第2位置之前，在第1壓力與第2壓力之間多次切換開口壓力。 The semiconductor wafer pick-up method of the present invention is characterized by comprising: a step of preparing a pick-up device for a semiconductor die, the pick-up device of the semiconductor die comprising a stage, a step surface forming mechanism, an opening pressure switching mechanism, and an adsorption pressure switching mechanism, The platform includes an adsorption surface that adsorbs a back surface of the cut sheet, the cut sheet is attached with a semiconductor die to be picked up on the surface, and the step surface forming mechanism includes a plurality of moving elements, which are formed in relation to a step surface of the adsorption surface, wherein the plurality of moving elements are disposed in an opening provided in the adsorption surface of the platform, and the front end surface is between a first position higher than the adsorption surface and a second position lower than the first position Moving, the opening pressure switching mechanism switches the opening pressure of the opening between a first pressure close to the vacuum and a second pressure close to the atmospheric pressure, the adsorption pressure switching mechanism being at a third pressure close to the vacuum and a fourth pressure close to the atmospheric pressure Switching the adsorption pressure of the adsorption surface; in the aligning step, the front end faces of the moving elements of the step surface forming mechanism are taken as the first position to be picked up Crystal plane conductor stepped stepped surface forming means is a positive upward causing the platform to move in the direction along the suction surface; a first release step, the adsorbed After the pressure is switched from the fourth pressure to the third pressure, after a predetermined period of time elapses, the opening pressure is switched from the second pressure to the first pressure so that the inner surface of the opening of the platform and the outer peripheral surface of the step surface forming mechanism are The dicing sheet is peeled off from the semiconductor die; and in the third peeling step, when the adsorption pressure is switched from the fourth pressure to the third pressure, the opening pressure is switched from the second pressure to the first pressure, and the adsorption pressure is self-controlled. The third pressure is switched to the fourth pressure, and each time the opening pressure is switched from the first pressure to the second pressure, at least one moving element is moved from the first position to the second position to make the front end of the moving element A portion of the face-oriented semiconductor grains is peeled off from the surface of the cut sheet. Further, it is preferable that the opening pressure switching mechanism switches the opening pressure a plurality of times between the first pressure and the second pressure before moving the moving element from the first position to the second position first.

本發明的半導體晶粒的拾取方法中，採用下述方案亦較佳，即，半導體晶粒的拾取裝置具備片材位移檢測感測器，該片材位移檢測感測器對平台的開口內表面與階差面形成機構外周面之間的切割片材相對於吸附面的接離方向的位移進行檢測，且第1剝離步驟包括：第1剝離判斷步驟，將吸附壓力自第4壓力切換為第3壓力後，在經過規定的時間後，將開口壓力自第2壓力切換為第1壓力時，在由片材位移檢測感測器所檢測出的片材位移超過規定的臨限值的情況下，判斷為平台的開口內表面與階差面形成機構外周面之間的切割片材自半導體晶粒發生了剝離，在由片材位移檢測感測器所檢測出的片材位移為規定的臨限值以下的情況下，判斷為平台的開口內表面與階差面形成機構外周面之間 的切割片材未自半導體晶粒發生剝離；以及第1重試(retry)步驟，在第1判斷步驟中判斷為平台的開口內表面與階差面形成機構外周面之間的切割片材未自半導體晶粒發生剝離的情況下，將吸附壓力自第3壓力切換為第4壓力，並且將開口壓力自第1壓力切換為第2壓力後，再次將吸附壓力自第4壓力切換為第3壓力後，在經過規定的時間後，將開口壓力自第2壓力切換為第1壓力，以使平台的開口內表面與階差面形成機構外周面之間的切割片材自半導體晶粒剝離。而且，採用下述方案亦較佳，即，片材位移檢測感測器是使用相對於切割片材的透光率為0%至30%的區域的波長的光來作為光源，或者採用下述方案亦較佳，即，片材位移檢測感測器是使用將0nm至300nm的短波長的LED作為光源的反射型光纖。 In the picking method of the semiconductor die of the present invention, it is preferable that the pick-up device of the semiconductor die is provided with a sheet displacement detecting sensor that faces the open inner surface of the platform The displacement of the cut sheet between the outer peripheral surface of the step surface forming mechanism and the suction surface is detected, and the first peeling step includes a first peeling determination step of switching the adsorption pressure from the fourth pressure to the first pressure After the pressure is applied, after the predetermined time has elapsed, when the opening pressure is switched from the second pressure to the first pressure, when the sheet displacement detected by the sheet displacement detecting sensor exceeds a predetermined threshold value, It is determined that the cut sheet between the inner surface of the opening of the platform and the outer peripheral surface of the step surface forming mechanism is peeled off from the semiconductor die, and the sheet displacement detected by the sheet displacement detecting sensor is a prescribed When the value is less than the limit value, it is determined that the inner surface of the opening of the platform and the outer peripheral surface of the step surface forming mechanism are The cut sheet is not peeled off from the semiconductor crystal grain; and the first retry step is judged in the first judging step as the cut sheet between the open inner surface of the stage and the outer peripheral surface of the step surface forming mechanism When the semiconductor crystal grain is peeled off, the adsorption pressure is switched from the third pressure to the fourth pressure, and the opening pressure is switched from the first pressure to the second pressure, and the adsorption pressure is again switched from the fourth pressure to the third pressure. After the pressure, after a predetermined period of time, the opening pressure is switched from the second pressure to the first pressure so that the cut sheet between the open inner surface of the stage and the outer peripheral surface of the step surface forming mechanism is peeled off from the semiconductor die. Further, it is preferable that the sheet displacement detecting sensor is a light source using a wavelength of a region of a light transmittance of 0% to 30% with respect to the cut sheet, or the following It is also preferable that the sheet displacement detecting sensor is a reflection type optical fiber using a short wavelength LED of 0 nm to 300 nm as a light source.

本發明的半導體晶粒的拾取方法中，採用下述方案亦較佳，即，半導體晶粒的拾取裝置包括吸頭、抽吸機構以及流量感測器，所述吸頭吸附半導體晶粒，所述抽吸機構連接於吸頭，自吸頭的表面抽吸空氣，所述流量感測器對抽吸機構的抽吸空氣流量進行檢測，且第2剝離步驟包括：第2剝離判斷步驟，在對由流量感測器檢測出的抽吸空氣流量信號進行微分所得的微分信號超過規定的臨限值範圍的次數為偶數的情況下，判斷為與自第1位置移動至第2位置的移動元件的前端面相向的半導體晶粒的一部分自切割片材的表面發生了剝離，在次數為奇數的情況下，判斷為半導 體晶粒的一部分未自切割片材的表面發生剝離；以及第2重試步驟，在由第2剝離判斷步驟判斷為半導體晶粒的一部分未自切割片材的表面發生剝離的情況下，不使移動元件自第1位置移動至第2位置，而將開口壓力自第1壓力切換為第2壓力後，將開口壓力再次自第2壓力切換為第1壓力，以使半導體晶粒的一部分自切割片材的表面剝離。 In the method for picking up a semiconductor die of the present invention, it is preferable that the semiconductor wafer pick-up device includes a suction head, a suction mechanism, and a flow sensor, wherein the suction head absorbs the semiconductor die. The suction mechanism is connected to the suction head, the air is sucked from the surface of the suction head, the flow sensor detects the suction air flow rate of the suction mechanism, and the second peeling step includes: a second peeling determination step, When the number of times the differential signal obtained by differentiating the extracted air flow rate signal detected by the flow sensor exceeds the predetermined threshold range is an even number, it is determined that the moving element moves from the first position to the second position. A part of the semiconductor crystal grains facing the front end face is peeled off from the surface of the cut sheet, and when the number of times is an odd number, it is judged to be a semi-conductive A part of the bulk crystal grains is not peeled off from the surface of the cut sheet; and in the second retry step, when it is determined by the second peeling determination step that a part of the semiconductor crystal grains is not peeled off from the surface of the cut sheet, When the moving element is moved from the first position to the second position, and the opening pressure is switched from the first pressure to the second pressure, the opening pressure is again switched from the second pressure to the first pressure, so that a part of the semiconductor crystal grains is self-contained. The surface of the cut sheet is peeled off.

本發明的半導體晶粒的拾取方法中，採用下述方案亦較佳，即，半導體晶粒的拾取裝置包括吸頭、抽吸機構以及流量感測器，所述吸頭吸附半導體晶粒，所述抽吸機構連接於吸頭，自吸頭的表面抽吸空氣，所述流量感測器對抽吸機構的抽吸空氣流量進行檢測，且第3剝離步驟包括：第3剝離判斷步驟，在對由流量感測器檢測出的抽吸空氣流量信號進行微分所得的微分信號超過規定的臨限值範圍的次數為偶數的情況下，判斷為與自第1位置移動至第2位置的移動元件的前端面相向的半導體晶粒的一部分自切割片材的表面發生了剝離，在次數為奇數的情況下，判斷為半導體晶粒的一部分未自切割片材的表面發生剝離；以及第3重試步驟，在由第3剝離判斷步驟判斷為半導體晶粒的一部分未自切割片材的表面發生剝離的情況下，不使移動元件自第1位置移動至第2位置，而將吸附壓力自第3壓力切換為第4壓力，並且將開口壓力自第1壓力切換為第2壓力後，將吸附壓力再次自第4壓力切換為第3壓力，並且將開口壓力再次自第2壓力切換為第1壓力，以使半導體晶粒的一部分自切割片材的表面剝離。 In the method for picking up a semiconductor die of the present invention, it is preferable that the semiconductor wafer pick-up device includes a suction head, a suction mechanism, and a flow sensor, wherein the suction head absorbs the semiconductor die. The suction mechanism is connected to the suction head, the air is sucked from the surface of the suction head, the flow sensor detects the suction air flow rate of the suction mechanism, and the third peeling step includes: a third peeling determination step, When the number of times the differential signal obtained by differentiating the extracted air flow rate signal detected by the flow sensor exceeds the predetermined threshold range is an even number, it is determined that the moving element moves from the first position to the second position. A part of the semiconductor wafer facing the front end surface is peeled off from the surface of the cut sheet, and when the number of times is an odd number, it is determined that a part of the semiconductor crystal grain is not peeled off from the surface of the cut sheet; and the third retry When it is determined by the third peeling determination step that a part of the semiconductor crystal grains is not peeled off from the surface of the cut sheet, the moving element is not moved from the first position to the second position. When the adsorption pressure is switched from the third pressure to the fourth pressure, and the opening pressure is switched from the first pressure to the second pressure, the adsorption pressure is again switched from the fourth pressure to the third pressure, and the opening pressure is again The second pressure is switched to the first pressure so that a part of the semiconductor crystal grains is peeled off from the surface of the cut sheet.

本發明起到下述效果，即，可抑制半導體晶粒的損傷的發生而有效地拾取半導體晶粒。 The present invention has an effect of efficiently picking up semiconductor crystal grains by suppressing occurrence of damage of semiconductor crystal grains.

10‧‧‧晶圓固持器 10‧‧‧Wafer Holder

11‧‧‧晶圓 11‧‧‧ wafer

12‧‧‧切割片材 12‧‧‧cut sheet

12a、18a‧‧‧表面 12a, 18a‧‧‧ surface

12b‧‧‧背面 12b‧‧‧Back

13‧‧‧環 13‧‧‧ Ring

14‧‧‧間隙 14‧‧‧ gap

15‧‧‧半導體晶粒 15‧‧‧Semiconductor grain

16‧‧‧擴展環 16‧‧‧Extension ring

17‧‧‧壓環 17‧‧‧ Pressure ring

18‧‧‧吸頭 18‧‧‧ Tips

19‧‧‧抽吸孔 19‧‧‧ suction hole

20‧‧‧平台 20‧‧‧ platform

22‧‧‧吸附面 22‧‧‧Adsorption surface

23‧‧‧開口 23‧‧‧ openings

23a、28a‧‧‧內表面 23a, 28a‧‧‧ inner surface

24‧‧‧基體部 24‧‧‧Base Department

25、82、92、102‧‧‧驅動部 25, 82, 92, 102‧‧‧ drive department

26、31a、45a、62、72‧‧‧槽 26, 31a, 45a, 62, 72‧‧‧ slots

27‧‧‧吸附孔 27‧‧‧Adsorption holes

28‧‧‧上側內部 28‧‧‧Upside interior

29‧‧‧下側內部 29‧‧‧Lower internal

29a‧‧‧階部 29a‧‧‧

30、630‧‧‧移動元件 30, 630‧‧‧ moving components

31‧‧‧周邊環狀移動元件 31‧‧‧Circumferential moving parts

32a~32f、34a~34f‧‧‧導引面 32a~32f, 34a~34f‧‧‧ guiding surface

33‧‧‧外周面 33‧‧‧ outer perimeter

33a~33e‧‧‧環狀構件 33a~33e‧‧‧ ring member

35a~35e‧‧‧直線凸輪面 35a~35e‧‧‧Linear cam surface

36a~36f、39a~39f‧‧‧水平支持面 36a~36f, 39a~39f‧‧‧ horizontal support surface

37a~37f‧‧‧鉤部 37a~37f‧‧‧ hook

38a~38e、47、631a~635a‧‧‧前端面 38a~38e, 47, 631a~635a‧‧‧ front face

40~43‧‧‧中間環狀移動元件 40~43‧‧‧Intermediate ring moving element

45‧‧‧柱狀移動元件 45‧‧‧ Columnar moving elements

46‧‧‧柱狀構件 46‧‧‧ Columnar members

51‧‧‧滑塊 51‧‧‧ Slider

52‧‧‧半圓柱構件 52‧‧‧Semi-cylindrical components

52a‧‧‧頂點(頂線) 52a‧‧‧ vertices (top line)

53、59、63‧‧‧銷 53, 59, 63‧ ‧ sales

54‧‧‧導軌 54‧‧‧rails

55‧‧‧凸緣 55‧‧‧Flange

56‧‧‧活塞 56‧‧‧Piston

57‧‧‧板構件 57‧‧‧ board components

58‧‧‧彈簧 58‧‧‧ Spring

60‧‧‧連桿構件 60‧‧‧ linkage members

70‧‧‧上下方向驅動構件 70‧‧‧Upper and downward direction drive members

71‧‧‧臂 71‧‧‧ Arm

73‧‧‧驅動棒 73‧‧‧ drive rod

74‧‧‧凸輪從動件 74‧‧‧Cam followers

75‧‧‧凸輪 75‧‧‧ cam

76‧‧‧軸 76‧‧‧Axis

77‧‧‧馬達 77‧‧‧Motor

80‧‧‧開口壓力切換機構 80‧‧‧Opening pressure switching mechanism

81、91、101‧‧‧三通閥 81, 91, 101‧‧‧ three-way valve

83~85、93~95、103~105‧‧‧配管 83~85, 93~95, 103~105‧‧‧Pipe

90‧‧‧吸附壓力切換機構 90‧‧‧Adsorption pressure switching mechanism

100‧‧‧抽吸機構 100‧‧‧sucking mechanism

106‧‧‧流量感測器 106‧‧‧Flow sensor

107‧‧‧片材位移檢測感測器 107‧‧‧Sheet Displacement Detection Sensor

110‧‧‧晶圓固持器水平方向驅動部 110‧‧‧Wafer Holder Horizontal Direction Drive

120‧‧‧平台上下方向驅動部 120‧‧‧ Platform up and down direction drive

130‧‧‧吸頭驅動部 130‧‧‧Dipper drive department

140‧‧‧真空裝置 140‧‧‧Vacuum device

150‧‧‧控制部 150‧‧‧Control Department

151‧‧‧CPU 151‧‧‧CPU

152‧‧‧儲存部 152‧‧‧ Storage Department

153‧‧‧機器/感測器介面 153‧‧‧machine/sensor interface

154‧‧‧資料匯流排 154‧‧‧ data bus

155‧‧‧控制程式 155‧‧‧Control program

156‧‧‧控制資料 156‧‧‧Control data

157‧‧‧對位程式 157‧‧‧ alignment program

158‧‧‧第1剝離程式 158‧‧‧1st stripping program

159‧‧‧第2剝離程式 159‧‧‧2nd stripping program

160‧‧‧第3剝離程式 160‧‧‧3rd stripping program

300‧‧‧階差面形成機構 300‧‧ ‧ step surface forming mechanism

333a~333f‧‧‧支持板 333a~333f‧‧‧Support board

500‧‧‧半導體晶粒的拾取裝置 500‧‧‧Semiconductor die pick-up device

631~635‧‧‧板狀移動元件 631~635‧‧‧ Plate-like moving parts

631b、635b‧‧‧外表面 631b, 635b‧‧‧ outer surface

a、A、c、e、201~207、210~217、220、221、223~232、241~247、278、279‧‧‧箭頭 a, A, c, e, 201~207, 210~217, 220, 221, 223~232, 241~247, 278, 279‧‧‧ arrows

d‧‧‧間隙 D‧‧‧ gap

D1、D2‧‧‧縱深 D 1 , D 2 ‧‧‧depth

F1~F3、F6‧‧‧拉伸力 F 1 ~F 3 , F 6 ‧‧‧ Tensile force

H0~H2、Hc‧‧‧高度 H 0 ~H 2 , H c ‧‧‧ Height

i1~i5、j2~j6‧‧‧點 i 1 ~i 5 ,j 2 ~j 6 ‧‧‧

L1~L6‧‧‧距離 L 1 ~ L 6 ‧‧‧ distance

P1‧‧‧第1壓力 P 1 ‧‧‧1st pressure

P2‧‧‧第2壓力 P 2 ‧‧‧2nd pressure

P3‧‧‧第3壓力 P 3 ‧‧‧3rd pressure

P4‧‧‧第4壓力 P 4 ‧‧‧4th pressure

t1~t14、t21~t23‧‧‧時刻 t 1 ~t 14 , t 21 ~t 23 ‧‧‧

T1‧‧‧厚度 T 1 ‧‧‧thickness

W1、W2‧‧‧寬度 W 1 , W 2 ‧ ‧ width

τ‧‧‧剪切應力 Τ‧‧‧ shear stress

圖1是表示本發明的實施形態中的半導體晶粒的拾取裝置的系統結構的說明圖。 FIG. 1 is an explanatory view showing a system configuration of a semiconductor wafer pick-up device according to an embodiment of the present invention.

圖2是表示本發明的實施形態中的半導體晶粒的拾取裝置的平台的立體圖。 2 is a perspective view showing a stage of a semiconductor wafer pick-up device in an embodiment of the present invention.

圖3A是表示本發明的實施形態中的半導體晶粒的拾取裝置的階差面形成機構的移動元件的立體圖。 3A is a perspective view showing a moving element of a step surface forming mechanism of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖3B是表示本發明的實施形態中的半導體晶粒的拾取裝置的階差面形成機構的移動元件的立體圖。 3B is a perspective view showing a moving element of a step surface forming mechanism of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖4A是表示本發明的實施形態中的半導體晶粒的拾取裝置的階差面形成機構的側面圖。 4A is a side view showing a step surface forming mechanism of the semiconductor wafer pick-up device in the embodiment of the present invention.

圖4B是表示本發明的實施形態中的半導體晶粒的拾取裝置的滑塊與移動元件的直線凸輪(cam)面的說明圖。 4B is an explanatory view showing a linear cam surface of a slider and a moving element of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖5是表示貼附於切割片材的晶圓的說明圖。 FIG. 5 is an explanatory view showing a wafer attached to a dicing sheet.

圖6是表示貼附於切割片材的半導體晶粒的說明圖。 Fig. 6 is an explanatory view showing a semiconductor die attached to a dicing sheet.

圖7A是表示晶圓固持器(wafer holder)的結構的平面圖。 Fig. 7A is a plan view showing the structure of a wafer holder.

圖7B是表示晶圓固持器的結構的立面圖。 Fig. 7B is an elevational view showing the structure of the wafer holder.

圖8是表示本發明的實施形態中的半導體晶粒的拾取裝置的 動作的說明圖。 8 is a view showing a semiconductor wafer pick-up device in an embodiment of the present invention; An illustration of the action.

圖9是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 9 is an explanatory view showing an operation of the semiconductor wafer pick-up device in the embodiment of the present invention.

圖10是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 10 is an explanatory view showing an operation of the semiconductor wafer pick-up device in the embodiment of the present invention.

圖11是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 11 is an explanatory view showing an operation of the semiconductor wafer pick-up device in the embodiment of the present invention.

圖12是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 12 is an explanatory view showing an operation of the semiconductor wafer pick-up device in the embodiment of the present invention.

圖13是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 13 is an explanatory view showing an operation of the semiconductor wafer pick-up device in the embodiment of the present invention.

圖14是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 14 is an explanatory view showing an operation of the semiconductor wafer pick-up device in the embodiment of the present invention.

圖15是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 15 is an explanatory view showing an operation of the semiconductor wafer pick-up device in the embodiment of the present invention.

圖16是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 16 is an explanatory view showing an operation of the semiconductor wafer pick-up device in the embodiment of the present invention.

圖17是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 17 is an explanatory view showing an operation of the semiconductor wafer pick-up device in the embodiment of the present invention.

圖18是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 18 is an explanatory view showing an operation of the semiconductor wafer pick-up device in the embodiment of the present invention.

圖19是表示本發明的實施形態中的半導體晶粒的拾取裝置的 動作的說明圖。 19 is a view showing a semiconductor wafer pick-up device according to an embodiment of the present invention; An illustration of the action.

圖20A是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作時的吸頭高度的時間變化的圖表。 FIG. 20A is a graph showing temporal changes in the height of the tip during the operation of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖20B是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作時的中間環狀移動元件位置的時間變化的圖表。 FIG. 20B is a graph showing temporal changes in the position of the intermediate annular moving element during the operation of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖20C是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作時的周邊環狀移動元件的位置的時間變化的圖表。 FIG. 20C is a graph showing temporal changes in the position of the peripheral annular moving element during the operation of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖20D是表示發明的實施形態中的半導體晶粒的拾取裝置的動作時的平台的吸附壓力的時間變化的圖表。 20D is a graph showing temporal changes in the adsorption pressure of the stage during the operation of the semiconductor wafer pick-up device in the embodiment of the invention.

圖20E是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作時的開口壓力的時間變化的圖表。 FIG. 20E is a graph showing temporal changes in the opening pressure during the operation of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖20F是表示本發明的實施形態中的半導體晶粒的拾取裝置的動作時的吸頭的空氣洩漏(leak)量的時間變化的圖表。 20F is a graph showing temporal changes in the amount of air leakage of the tip during the operation of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖21A是表示本發明的實施形態中的半導體晶粒的拾取裝置進行剝離判斷步驟的動作時的、剝離成功時的吸頭空氣洩漏量的時間變化的圖表。 FIG. 21 is a graph showing temporal changes in the amount of leakage of the head air when the peeling is successful in the operation of the peeling determination step of the semiconductor wafer pick-up apparatus according to the embodiment of the present invention.

圖21B是表示本發明的實施形態中的半導體晶粒的拾取裝置進行剝離判斷步驟的動作時的、剝離成功時的吸頭空氣洩漏量的微分值的時間變化的圖表。 FIG. 21B is a graph showing temporal changes in the differential value of the tip air leakage amount when the peeling is successful in the operation of the peeling determination step of the semiconductor wafer pick-up apparatus according to the embodiment of the present invention.

圖21C是表示本發明的實施形態中的半導體晶粒的拾取裝置進行剝離判斷步驟的動作時的、剝離不成功時的吸頭空氣洩漏量的時間變化的圖表。 FIG. 21C is a graph showing temporal changes in the amount of head air leakage when the peeling determination process is performed in the semiconductor wafer pick-up apparatus according to the embodiment of the present invention.

圖21D是表示本發明的實施形態中的半導體晶粒的拾取裝置進行剝離判斷步驟的動作時的、剝離不成功時的吸頭空氣洩漏量的微分值的時間變化的圖表。 FIG. 21D is a graph showing temporal changes in the differential value of the head air leakage amount when the peeling determination process is performed in the semiconductor wafer pick-up apparatus according to the embodiment of the present invention.

圖22A是表示本發明的實施形態中的半導體晶粒的拾取裝置的其他動作時的吸頭高度的時間變化的圖表。 FIG. 22A is a graph showing temporal changes in the height of the tip at the time of other operations of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖22B是表示本發明的實施形態中的半導體晶粒的拾取裝置的其他動作時的中間環狀移動元件位置的時間變化的圖表。 FIG. 22B is a graph showing temporal changes in the position of the intermediate annular moving element in another operation of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖22C是表示本發明的實施形態中的半導體晶粒的拾取裝置的其他動作時的周邊環狀移動元件的位置的時間變化的圖表。 FIG. 22C is a graph showing temporal changes in the position of the peripheral annular moving element in another operation of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖22D是表示本發明的實施形態中的半導體晶粒的拾取裝置的其他動作時的平台的吸附壓力的時間變化的圖表。 22D is a graph showing temporal changes in the adsorption pressure of the stage during another operation of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖22E是表示本發明的實施形態中的半導體晶粒的拾取裝置的其他動作時的開口壓力的時間變化的圖表。 22E is a graph showing temporal changes in the opening pressure in another operation of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖22F是表示本發明的實施形態中的半導體晶粒的拾取裝置的其他動作時的吸頭的空氣洩漏量的時間變化的圖表。 FIG. 22F is a graph showing temporal changes in the amount of air leakage of the tip at the time of other operations of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖23A是表示本發明的實施形態中的半導體晶粒的拾取裝置的其他動作時的吸頭高度的時間變化的圖表。 FIG. 23A is a graph showing temporal changes in the height of the tip during another operation of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖23B是表示本發明的實施形態中的半導體晶粒的拾取裝置的其他動作時的中間環狀移動元件位置的時間變化的圖表。 FIG. 23B is a graph showing temporal changes in the position of the intermediate annular moving element in another operation of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖23C是表示本發明的實施形態中的半導體晶粒的拾取裝置的其他動作時的周邊環狀移動元件的位置的時間變化的圖表。 FIG. 23C is a graph showing temporal changes in the position of the peripheral annular moving element in another operation of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖23D是表示本發明的實施形態中的半導體晶粒的拾取裝置 的其他動作時的平台的吸附壓力的時間變化的圖表。 23D is a view showing a semiconductor wafer pick-up device in an embodiment of the present invention; A chart of the time variation of the adsorption pressure of the platform when other actions are taken.

圖23E是表示本發明的實施形態中的半導體晶粒的拾取裝置的其他動作時的開口壓力的時間變化的圖表。 23E is a graph showing temporal changes in the opening pressure in another operation of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖23F是表示本發明的實施形態中的半導體晶粒的拾取裝置的其他動作時的吸頭的空氣洩漏量的時間變化的圖表。 FIG. 23F is a graph showing temporal changes in the amount of air leakage of the tip at the time of other operations of the semiconductor wafer pick-up device according to the embodiment of the present invention.

圖24是表示本發明的實施形態中的半導體晶粒的拾取裝置的平台與階差面形成機構的其他移動元件的立體圖。 Fig. 24 is a perspective view showing another moving element of the stage of the semiconductor wafer pick-up device and the step surface forming mechanism in the embodiment of the present invention.

圖25是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的平台與階差面形成機構的移動元件的立體圖。 Fig. 25 is a perspective view showing a moving element of a stage and a step surface forming mechanism of a semiconductor wafer pick-up device according to another embodiment of the present invention.

圖26是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 26 is an explanatory view showing an operation of a semiconductor wafer pick-up device according to another embodiment of the present invention.

圖27是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 27 is an explanatory view showing an operation of a semiconductor wafer pick-up device according to another embodiment of the present invention.

圖28是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 28 is an explanatory view showing an operation of a semiconductor wafer pick-up device according to another embodiment of the present invention.

圖29是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 29 is an explanatory view showing an operation of a semiconductor wafer pick-up device according to another embodiment of the present invention.

圖30是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 30 is an explanatory view showing an operation of a semiconductor wafer pick-up device according to another embodiment of the present invention.

圖31是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作的說明圖 FIG. 31 is an explanatory view showing an operation of a semiconductor wafer pick-up device according to another embodiment of the present invention.

圖32是表示本發明的其他實施形態中的半導體晶粒的拾取裝 置的動作的說明圖 Figure 32 is a view showing the pickup of a semiconductor die in another embodiment of the present invention. Description of the action

圖33是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 33 is an explanatory view showing an operation of a semiconductor wafer pick-up device according to another embodiment of the present invention.

圖34是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 34 is an explanatory view showing an operation of a semiconductor wafer pick-up device according to another embodiment of the present invention.

圖35是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作的說明圖 35 is an explanatory view showing an operation of a semiconductor wafer pick-up device according to another embodiment of the present invention.

圖36是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 36 is an explanatory view showing an operation of a semiconductor wafer pick-up device according to another embodiment of the present invention.

圖37是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作的說明圖。 FIG. 37 is an explanatory view showing an operation of a semiconductor wafer pick-up device according to another embodiment of the present invention.

圖38A是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作時的吸頭高度的時間變化的圖表。 FIG. 38A is a graph showing temporal changes in the height of the tip during the operation of the semiconductor wafer pick-up device according to another embodiment of the present invention.

圖38B是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作時的第1板狀移動元件的位置的時間變化的圖表。 FIG. 38B is a graph showing temporal changes in the position of the first plate-shaped moving element during the operation of the semiconductor wafer pick-up device according to another embodiment of the present invention.

圖38C是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作時的第2板狀移動元件的位置的時間變化的圖表。 FIG. 38C is a graph showing temporal changes in the position of the second plate-shaped moving element during the operation of the semiconductor wafer pick-up device according to another embodiment of the present invention.

圖38D是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作時的第3板狀移動元件的位置的時間變化的圖表。 38D is a graph showing temporal changes in the position of the third plate-shaped moving element during the operation of the semiconductor wafer pick-up device according to another embodiment of the present invention.

圖38E是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作時的平台的吸附壓力的時間變化的圖表。 FIG. 38E is a graph showing temporal changes in the adsorption pressure of the stage during the operation of the semiconductor wafer pick-up apparatus according to another embodiment of the present invention.

圖38F是表示本發明的其他實施形態中的半導體晶粒的拾取 裝置的動作時的開口壓力的時間變化的圖表。 Figure 38F is a view showing the pickup of a semiconductor die in another embodiment of the present invention. A graph of the temporal change in the opening pressure during the operation of the device.

圖38G是表示本發明的其他實施形態中的半導體晶粒的拾取裝置的動作時的吸頭的空氣洩漏量的時間變化的圖表。 FIG. 38G is a graph showing temporal changes in the amount of air leakage of the tip during the operation of the semiconductor wafer pick-up device according to another embodiment of the present invention.

以下，參照圖式來說明本發明的實施形態的半導體晶粒的拾取裝置。如圖1所示，本實施形態的半導體晶粒的拾取裝置500包括：晶圓固持器10，保持切割片材12，且沿水平方向移動，所述切割片材12在表面12a上貼附有半導體晶粒15；平台20，配置於晶圓固持器10的下表面，且包含吸附面22，該吸附面22吸附切割片材12的背面12b；多個移動元件30，配置在平台20的吸附面22上所設的開口23內；階差面形成機構300，形成相對於吸附面22的階差面；吸頭18，拾取半導體晶粒15；開口壓力切換機構80，切換平台20的開口23的壓力；吸附壓力切換機構90，切換平台20的吸附面22的吸附壓力；抽吸機構100，自吸頭18的表面18a抽吸空氣；真空裝置140；晶圓固持器水平方向驅動部110，沿水平方向驅動晶圓固持器10；平台上下方向驅動部120，沿上下方向驅動平台20；吸頭驅動部130，沿上下左右方向驅動吸頭18；以及控制部150，進行半導體晶粒的拾取裝置500的驅動控制。 Hereinafter, a semiconductor wafer pick-up device according to an embodiment of the present invention will be described with reference to the drawings. As shown in FIG. 1, the semiconductor wafer pick-up device 500 of the present embodiment includes a wafer holder 10 that holds the cut sheet 12 and moves in the horizontal direction, and the cut sheet 12 is attached to the surface 12a. The semiconductor die 15 is disposed on the lower surface of the wafer holder 10 and includes an adsorption surface 22 that adsorbs the back surface 12b of the cut sheet 12; a plurality of moving elements 30 disposed on the platform 20 for adsorption The opening 23 is provided in the surface 22; the step surface forming mechanism 300 forms a step surface with respect to the adsorption surface 22; the tip 18 picks up the semiconductor die 15; the opening pressure switching mechanism 80, the opening 23 of the switching platform 20 Pressure; adsorption pressure switching mechanism 90, adsorption pressure of the adsorption surface 22 of the switching platform 20; suction mechanism 100, suctioning air from the surface 18a of the suction head 18; vacuum device 140; wafer holder horizontal direction driving portion 110, The wafer holder 10 is driven in the horizontal direction; the platform vertical driving unit 120 drives the stage 20 in the up and down direction; the head driving unit 130 drives the tip 18 in the up, down, left and right directions; and the control unit 150 performs semiconductor wafer picking. Device 50 0 drive control.

階差面形成機構300被收納在平台20上部的基體部24中，且由配置在下部的驅動部25中的馬達(motor)77予以驅動。階差面形成機構300包括：橢圓狀的凸輪75，連接於馬達77的軸 76；驅動棒73，連接於與凸輪75接觸的凸輪從動件(cam follower)74，沿上下方向受到驅動；L字形狀的上下方向驅動構件70，連接於驅動棒73；板構件57，經由彈簧(spring)58而連接於上下方向驅動構件70；活塞(piston)56，連接於板構件57的上側；凸緣55，安裝於活塞56的上表面；導軌(guide rail)54，安裝在凸緣55上；滑塊51，受導軌54導引而在平台20的上側內部28中沿水平方向移動，以使多個移動元件30沿上下方向移動；以及L字狀的連桿(link)構件60。連桿構件60的彎曲部分的中心旋轉自如地安裝在板構件57上所設的銷(pin)59上，安裝在下側端部的銷63卡合於上下方向驅動構件70的臂(arm)71上所設的槽72。而且，設置在連桿構件60上側的U字型的槽62卡合於滑塊51的銷53。而且，凸緣55可卡合於平台20的下側內部29的階部29a。 The step surface forming mechanism 300 is housed in the base portion 24 at the upper portion of the stage 20, and is driven by a motor 77 disposed in the lower driving portion 25. The step surface forming mechanism 300 includes an elliptical cam 75 connected to the shaft of the motor 77. 76; the driving rod 73 is connected to a cam follower 74 that is in contact with the cam 75, and is driven in the up and down direction; the L-shaped vertical driving member 70 is connected to the driving rod 73; the plate member 57 is passed through A spring 58 is coupled to the up and down direction drive member 70; a piston 56 is coupled to the upper side of the plate member 57; a flange 55 is mounted to the upper surface of the piston 56; and a guide rail 54 is mounted to the boss The slider 51 is guided by the guide rail 54 to move in the horizontal direction in the upper inner side 28 of the platform 20 to move the plurality of moving elements 30 in the up and down direction; and an L-shaped link member 60. The center of the curved portion of the link member 60 is rotatably attached to a pin 59 provided on the plate member 57, and the pin 63 attached to the lower end portion is engaged with an arm 71 of the up-and-down driving member 70. The groove 72 provided above. Further, the U-shaped groove 62 provided on the upper side of the link member 60 is engaged with the pin 53 of the slider 51. Moreover, the flange 55 can be engaged with the step 29a of the lower inner portion 29 of the platform 20.

在階差面形成機構300中，當驅動部25的馬達77如圖1所示的箭頭a般沿逆時針方向旋轉時，凸輪75亦如箭頭a所示般沿逆時針方向旋轉，安裝有與凸輪75接觸的凸輪從動件74的驅動棒73朝上方向移動。藉此，上下方向驅動構件70朝上方向移動而將凸緣55按壓至階部29a，並且上下方向驅動構件70的臂71上推連桿構件60下側的銷63。安裝有導軌54的凸緣55被按壓至平台20內部的階部29a而未朝上下方向移動，因此連桿構件60如圖1的箭頭c所示，繞板構件57的銷59沿順時針方向旋轉，前端的槽62使滑塊51的銷53如圖1所示的箭頭A般沿著吸附面 22而朝右方向滑動。當滑塊51沿箭頭A的方向移動時，多個移動元件30的各前端面如圖1所示的箭頭e般朝下側移動。後文說明移動元件30的詳情。 In the step surface forming mechanism 300, when the motor 77 of the driving portion 25 rotates counterclockwise as indicated by an arrow a shown in FIG. 1, the cam 75 also rotates counterclockwise as indicated by an arrow a, and is mounted with The drive rod 73 of the cam follower 74 that the cam 75 contacts is moved upward. Thereby, the up-and-down direction drive member 70 moves in the upward direction, the flange 55 is pressed to the step portion 29a, and the arm 71 of the up-and-down direction drive member 70 pushes up the pin 63 on the lower side of the link member 60. The flange 55 to which the guide rail 54 is attached is pressed to the step portion 29a inside the stage 20 without moving in the up and down direction, so that the link member 60 is clockwise around the pin 59 of the plate member 57 as indicated by an arrow c in Fig. 1 Rotating, the groove 62 at the front end causes the pin 53 of the slider 51 to follow the arrow A as shown in FIG. 22 and slide in the right direction. When the slider 51 moves in the direction of the arrow A, the front end faces of the plurality of moving members 30 move toward the lower side as the arrow e shown in FIG. Details of the moving element 30 will be described later.

對平台20的開口23的壓力進行切換的開口壓力切換機構80具備三通閥81以及進行三通閥81的開閉驅動的驅動部82。三通閥81具備3個埠(port)，第1埠利用配管83而連接於與平台20的開口23連通的基體部24，第2埠利用配管84而連接於真空裝置140，第3埠連接於向大氣開放的配管85。驅動部82使第1埠與第2埠連通而阻斷第3埠，以將開口23的壓力設為接近真空的第1壓力P1，或者使第1埠與第3埠連通而阻斷第2埠，以將開口23的壓力設為接近大氣壓的第2壓力P2，藉此，在第1壓力P1與第2壓力P2之間切換開口23的壓力。 The opening pressure switching mechanism 80 that switches the pressure of the opening 23 of the stage 20 includes a three-way valve 81 and a driving unit 82 that performs opening and closing driving of the three-way valve 81. The three-way valve 81 is provided with three ports, the first port is connected to the base portion 24 that communicates with the opening 23 of the platform 20 by the pipe 83, and the second port is connected to the vacuum device 140 by the pipe 84, and the third port is connected. A pipe 85 that is open to the atmosphere. The driving unit 82 connects the first turn and the second turn to block the third turn, and the pressure of the opening 23 is set to be close to the first pressure P 1 of the vacuum, or the first turn and the third turn are connected to block the first pass. In other words, the pressure of the opening 23 is switched between the first pressure P 1 and the second pressure P 2 by setting the pressure of the opening 23 to the second pressure P 2 close to the atmospheric pressure.

對平台20的吸附面22的吸附壓力進行切換的吸附壓力切換機構90是與開口壓力切換機構80同樣地，包括具備3個埠的三通閥91以及進行三通閥91的開閉驅動的驅動部92，第1埠利用配管93而連接於與平台20的槽26連通的吸附孔27，第2埠利用配管94而連接於真空裝置140，第3埠連接於向大氣開放的配管95。驅動部92使第1埠與第2埠連通而阻斷第3埠，以將槽26或吸附面22的壓力設為接近真空的第3壓力P3，或者使第1埠與第3埠連通而阻斷第2埠，從而將槽26或吸附面22的壓力設為接近大氣壓的第4壓力P4，藉此，在第3壓力P3與第4壓力P4之間切換槽26或吸附面22的壓力。 Similarly to the opening pressure switching mechanism 80, the adsorption pressure switching mechanism 90 that switches the adsorption pressure of the adsorption surface 22 of the stage 20 includes a three-way valve 91 having three turns and a driving unit that performs opening and closing driving of the three-way valve 91. 92, the first port is connected to the adsorption hole 27 that communicates with the groove 26 of the stage 20 by the pipe 93, the second port is connected to the vacuum device 140 by the pipe 94, and the third port is connected to the pipe 95 that is open to the atmosphere. The driving unit 92 connects the first turn and the second turn to block the third turn, and sets the pressure of the groove 26 or the adsorption surface 22 to the third pressure P 3 close to the vacuum or the first turn to the third turn. When the second crucible is blocked, the pressure of the tank 26 or the adsorption surface 22 is set to be the fourth pressure P 4 close to the atmospheric pressure, whereby the groove 26 or the adsorption is switched between the third pressure P 3 and the fourth pressure P 4 . The pressure of face 22.

自吸頭18的表面18a抽吸空氣的抽吸機構100是與開口壓力切換機構80同樣地，包括具備3個埠的三通閥101以及進行三通閥101的開閉驅動的驅動部102，通過吸頭18的抽吸孔19而自表面18a吸入空氣，從而將吸頭18的表面18a設為真空。在將吸頭18的抽吸孔19與三通閥101之間予以連接的配管103中，安裝有流量感測器106，該流量感測器106對自吸頭18的表面18a抽吸至真空裝置140的空氣流量進行檢測。 Similarly to the opening pressure switching mechanism 80, the suction mechanism 100 that sucks air from the surface 18a of the suction head 18 includes a three-way valve 101 having three turns and a driving unit 102 that performs opening and closing driving of the three-way valve 101. The suction hole 19 of the tip 18 draws in air from the surface 18a, thereby setting the surface 18a of the tip 18 to a vacuum. In the pipe 103 connecting the suction hole 19 of the suction head 18 and the three-way valve 101, a flow sensor 106 is attached, which sucks the vacuum from the surface 18a of the suction head 18 to the vacuum The air flow of device 140 is detected.

晶圓固持器水平方向驅動部110、平台上下方向驅動部120、吸頭驅動部130例如藉由設置在內部的馬達與齒輪(gear)，來沿水平方向或上下方向等驅動晶圓固持器10、平台20、吸頭18。而且，如圖1及圖4A所示，在平台20的開口23的內表面23a與移動元件30的外周面33的間隙d中，安裝有片材位移檢測感測器107，該片材位移檢測感測器107對切割片材12相對於吸附面22的接離方向的位移進行檢測。自片材位移檢測感測器107的光源照射的照射光較佳為不會對切割片材、存在於切割片材與晶粒之間的晶粒黏著薄膜(die attach film)及晶粒黏著薄膜的黏著劑層的品質造成影響的高反射率的光，例如，較佳為切割片材的透光率為0%至30%的短波長的0nm至300nm的光，更佳可為100nm至300nm的光，最佳可使用將200nm至300nm的LED或藍色LED作為光源的反射型光纖。而且，在本實施形態中例示了使用反射型光纖的情況，但只要可輸出相對於切割片材的反射率高的光，則可使用其他形式的感測器。 The wafer holder horizontal direction driving unit 110, the stage vertical direction driving unit 120, and the tip driving unit 130 drive the wafer holder 10 in the horizontal direction or the vertical direction by, for example, a motor and a gear provided inside. , platform 20, and tip 18. Further, as shown in FIGS. 1 and 4A, in the gap d between the inner surface 23a of the opening 23 of the stage 20 and the outer peripheral surface 33 of the moving member 30, a sheet displacement detecting sensor 107 is mounted, which is detected by the sheet displacement. The sensor 107 detects the displacement of the cut sheet 12 in the direction of separation from the suction surface 22. The illumination light irradiated from the light source of the sheet displacement detecting sensor 107 is preferably a die attach film and a die attach film which are not applied to the cut sheet, between the cut sheet and the crystal grains. The high reflectance light affected by the quality of the adhesive layer is, for example, preferably a light transmittance of 0 to 300% of a short wavelength of 0 to 300% of the cut sheet, more preferably 100 nm to 300 nm. For the light, a reflective fiber using a 200 nm to 300 nm LED or a blue LED as a light source can be preferably used. Further, in the present embodiment, a case where a reflection type optical fiber is used is exemplified, but other types of sensors may be used as long as light having a high reflectance with respect to the dicing sheet can be output.

控制部150包含進行運算處理的中央處理單元(Central Processing Unit，CPU)151、記憶部152以及機器/感測器介面(interface)153，CPU 151、記憶部152與機器/感測器介面153是利用資料匯流排(data bus)154而連接的電腦(computer)。在記憶部152中，保存有控制程式(program)155、控制資料156、對位程式157、第1剝離程式158、第2剝離程式159、第3剝離程式160。 The control unit 150 includes a central processing unit (CPU) 151 that performs arithmetic processing, a memory unit 152, and a device/sensor interface 153. The CPU 151, the memory unit 152, and the device/sensor interface 153 are A computer connected by a data bus 154. The memory unit 152 stores a control program 155, a control data 156, a registration program 157, a first peeling program 158, a second peeling program 159, and a third peeling program 160.

開口壓力切換機構80、吸附壓力切換機構90、抽吸機構100的各三通閥81、三通閥91、三通閥101的各驅動部82、驅動部92、驅動部102及階差面形成機構300的馬達77、晶圓固持器水平方向驅動部110、平台上下方向驅動部120、吸頭驅動部130、真空裝置140分別連接於機器/感測器介面153，根據控制部150的指令而受到驅動。而且，流量感測器106、片材位移檢測感測器107分別連接於機器/感測器介面153，檢測信號被導入至控制部150中進行處理。 The opening pressure switching mechanism 80, the adsorption pressure switching mechanism 90, the three-way valve 81 of the suction mechanism 100, the three-way valve 91, the respective driving portions 82 of the three-way valve 101, the driving portion 92, the driving portion 102, and the step surface are formed. The motor 77 of the mechanism 300, the wafer holder horizontal direction driving unit 110, the platform vertical direction driving unit 120, the tip driving unit 130, and the vacuum device 140 are respectively connected to the device/sensor interface 153, according to an instruction of the control unit 150. Driven. Further, the flow sensor 106 and the sheet displacement detecting sensor 107 are respectively connected to the machine/sensor interface 153, and the detection signal is introduced into the control unit 150 for processing.

接下來，參照圖2至圖4A、圖4B來說明平台20的吸附面22與移動元件30的詳情。如圖2所示，平台20為圓筒形，且在上表面形成有平面狀的吸附面22。在吸附面22的中央，設置有四方的開口23，在開口23中，安裝有圖3A、圖3B、圖4A、圖4B所示的移動元件30。如圖4A所示，在開口23與移動元件30的外周面33之間設置有間隙d。在開口23的周圍，以圍繞開口23的方式設置兩重的槽26。在各槽26中設置有吸附孔27，各 吸附孔27連接於吸附壓力切換機構90。 Next, details of the adsorption surface 22 of the stage 20 and the moving member 30 will be described with reference to FIGS. 2 to 4A and 4B. As shown in FIG. 2, the stage 20 has a cylindrical shape, and a planar adsorption surface 22 is formed on the upper surface. In the center of the adsorption surface 22, four openings 23 are provided, and in the opening 23, the moving element 30 shown in Figs. 3A, 3B, 4A, and 4B is attached. As shown in FIG. 4A, a gap d is provided between the opening 23 and the outer peripheral surface 33 of the moving member 30. Around the opening 23, a double groove 26 is provided around the opening 23. Adsorption holes 27 are provided in each of the grooves 26, each The adsorption hole 27 is connected to the adsorption pressure switching mechanism 90.

如圖3A所示，移動元件30包括配置在中央的柱狀移動元件45、配置在柱狀移動元件45周圍的多個環狀移動元件31、環狀移動元件40至環狀移動元件43。如圖3A所示，多個環狀移動元件31、環狀移動元件40至環狀移動元件43呈襯套狀地配置在中央的柱狀移動元件45的周圍。接下來，參照圖3B來說明配置在最外周的周邊環狀移動元件31的結構。周邊環狀移動元件31包括：四方的環狀構件33a，其寬度為W1、縱深(長邊方向長度)為D1且厚度為T1；以及支持板333a，伸出至環狀構件33a的相向的兩面的下側。支持板333a的長邊方向的兩端成為相對於環狀構件33a的前端面38a而垂直且沿上下方向延伸的導引面32a、導引面34a。如圖4A所示，各導引面32a、導引面34a分別與平台20的上側內部28的垂直的內表面28a接觸，從而沿上下方向導引周邊環狀移動元件31。在支持板333a的下表面，形成有：作為傾斜面的直線凸輪面35a；以及水平支持面36a、水平支持面39a，連接於直線凸輪面35a，且沿長邊方向水平地延伸。如圖4B所示，水平支持面36a相對於水平支持面39a而高了高度H2。直線凸輪面35a與水平支持面36a、水平支持面39a如圖4A、圖4B所示，是與安裝於滑塊51上端的半圓柱構件52的頂點52a一邊接觸一邊移動的面。而且，在支持板333a的導引面34a側(圖4A、圖4B中以箭頭A所示的滑塊51的移動方向的端側)，設置有供滑塊51的半圓柱構件52嵌入而對周邊環狀移動元件31進行固定的鉤 部37a。 As shown in FIG. 3A, the moving element 30 includes a columnar moving element 45 disposed at the center, a plurality of annular moving elements 31 disposed around the columnar moving element 45, and an annular moving element 40 to the annular moving element 43. As shown in FIG. 3A, the plurality of annular moving elements 31, the annular moving elements 40, and the annular moving elements 43 are arranged in a bushing shape around the central columnar moving element 45. Next, the configuration of the peripheral annular moving element 31 disposed at the outermost periphery will be described with reference to FIG. 3B. The peripheral annular moving element 31 includes a square annular member 33a having a width W 1 , a depth (length in the longitudinal direction) D 1 and a thickness T 1 , and a support plate 333a projecting to the annular member 33a. The lower side of the opposite sides. Both ends of the support plate 333a in the longitudinal direction are a guide surface 32a and a guide surface 34a which are perpendicular to the front end surface 38a of the annular member 33a and extend in the vertical direction. As shown in FIG. 4A, each of the guide faces 32a and 34a is in contact with the vertical inner surface 28a of the upper inner portion 28 of the stage 20, thereby guiding the peripheral annular moving member 31 in the up and down direction. On the lower surface of the support plate 333a, a linear cam surface 35a as an inclined surface, and a horizontal support surface 36a and a horizontal support surface 39a are formed, which are connected to the linear cam surface 35a and extend horizontally in the longitudinal direction. As shown in FIG. 4B, the horizontal support surface 36a is raised by a height H 2 with respect to the horizontal support surface 39a. As shown in FIGS. 4A and 4B, the linear cam surface 35a, the horizontal support surface 36a, and the horizontal support surface 39a are surfaces that move while being in contact with the apex 52a of the semi-cylindrical member 52 attached to the upper end of the slider 51. Further, on the side of the guide surface 34a of the support plate 333a (the end side in the moving direction of the slider 51 shown by the arrow A in FIGS. 4A and 4B), the semi-cylindrical member 52 for the slider 51 is provided to be fitted. The peripheral annular moving element 31 performs a fixed hook portion 37a.

配置在柱狀移動元件45與周邊環狀移動元件31之間的中間環狀移動元件40至中間環狀移動元件43為與周邊環狀移動元件31同樣的結構，各環狀構件33b至環狀構件33e的寬度W、縱深(長邊方向長度)D比外周側的環狀構件的尺寸小該環狀構件的厚度量，各環狀構件33a至環狀構件33e如圖4A所示般重疊成襯套狀。而且，各支持板333a至支持板333e如圖3A所示，在寬度方向上重疊配置。因此，如圖3A所示，各導引面34a至導引面34e自外周側朝向中央，如34a、34b、34c、34d、34e般連續配置，成為1個面。雖未圖示，但相反側的導引面32a至導引面32e亦同樣如此。 The intermediate annular moving element 40 to the intermediate annular moving element 43 disposed between the columnar moving element 45 and the peripheral annular moving element 31 have the same structure as the peripheral annular moving element 31, and each annular member 33b to the ring shape The width W and the depth (length in the longitudinal direction) D of the member 33e are smaller than the size of the annular member on the outer peripheral side, and the thickness of the annular member is overlapped as shown in FIG. 4A in each annular member 33a to the annular member 33e. Bushing. Further, as shown in FIG. 3A, each of the support plates 333a to 333e is arranged to overlap in the width direction. Therefore, as shown in FIG. 3A, each of the guide faces 34a to 34e is arranged continuously from the outer peripheral side toward the center, as in 34a, 34b, 34c, 34d, and 34e, and becomes one surface. Although not shown, the same applies to the guide faces 32a to 32e on the opposite sides.

如圖4A所示，周邊環狀移動元件31、中間環狀移動元件40至中間環狀移動元件43上所設的直線凸輪面35a至直線凸輪面35e是以下述方式配置，即，越往中心側的中間環狀移動元件，則直線凸輪面35a至直線凸輪面35e越朝圖4A、圖4B中的箭頭A所示的滑塊51的移動方向偏離。即，如圖4B所示，作為傾斜面的直線凸輪面35a至直線凸輪面35e的點i1~i5自基準位置算起的距離為L1~L5(L1>L2>L3>L4>L5)，所述點i1~i5是自水平支持面39a至水平支持面39e算起的高度為H1的點。而且，自水平支持面39a至水平支持面39e算起的高度為H2的、水平支持面36a至水平支持面36e上的點j2~j6是自基準位置算起的距離為L2~L6(L2>L3>L4>L5>L6)的點。以此方式構成直線凸輪面 35a至直線凸輪面35e，因此當滑塊51朝圖4B所示的箭頭A的方向移動時，外周側的周邊環狀移動元件31的前端面38a先於中間環狀移動元件40至中間環狀移動元件43的前端面38b至前端面38e而自第1位置移動至第2位置。而且，中間環狀移動元件40至中間環狀移動元件43的前端面38b至前端面38e中，外周側的中間環狀移動元件的前端面先於內周側的環狀移動元件的前端面而自第1位置移動至第2位置。 As shown in FIG. 4A, the linear cam surface 35a to the linear cam surface 35e provided in the peripheral annular moving element 31 and the intermediate annular moving element 40 to the intermediate annular moving element 43 are arranged in such a manner that the center is further The intermediate annular moving element on the side is shifted from the linear cam surface 35a to the linear cam surface 35e toward the moving direction of the slider 51 shown by the arrow A in FIGS. 4A and 4B. That is, as shown in Fig. 4B, the distance i 1 to i 5 of the linear cam surface 35a to the linear cam surface 35e as the inclined surface from the reference position is L 1 to L 5 (L 1 > L 2 > L 3 >L 4 > L 5 ), the points i 1 to i 5 are points at which the height H 1 from the horizontal support surface 39a to the horizontal support surface 39e. Further, the points j 2 to j 6 on the horizontal support surface 36a to the horizontal support surface 36e having the height H 2 from the horizontal support surface 39a to the horizontal support surface 39e are the distances from the reference position L 2 ~ A point of L 6 (L 2 > L 3 > L 4 > L 5 > L 6 ). In this way, the linear cam surface 35a to the linear cam surface 35e are formed. Therefore, when the slider 51 moves in the direction of the arrow A shown in FIG. 4B, the front end surface 38a of the peripheral annular moving element 31 on the outer peripheral side precedes the intermediate ring shape. The moving element 40 is moved from the first position to the second position from the front end surface 38b to the front end surface 38e of the intermediate annular moving element 43. Further, in the front end surface 38b to the front end surface 38e of the intermediate annular moving element 40 to the intermediate annular moving element 43, the front end surface of the intermediate annular moving element on the outer peripheral side precedes the front end surface of the annular moving element on the inner peripheral side. Move from the first position to the second position.

如圖3A所示，柱狀移動元件45包括：四方的柱狀構件46，寬度為W2、縱深(長邊方向長度)為D2；以及兩片支持板333f，連接於柱狀構件46的下側。支持板333f的長邊方向的兩端是與環狀移動元件31、環狀移動元件40至環狀移動元件43同樣地，成為與內表面28a接觸的導引面32f、導引面34f。而且，如圖4A、圖4B所示，柱狀移動元件45的支持板333f在下表面未形成作為傾斜面的直線凸輪面，水平支持面39f沿長邊方向(滑塊51的移動方向)延伸。 As shown in FIG. 3A, the columnar moving member 45 includes: a quadrangular columnar member 46 having a width W 2 and a depth (length in the longitudinal direction) D 2 ; and two support plates 333f connected to the columnar member 46. Lower side. Both ends of the support plate 333f in the longitudinal direction are the guide surface 32f and the guide surface 34f which are in contact with the inner surface 28a, similarly to the annular moving element 31 and the annular moving element 40 to the annular moving element 43. Further, as shown in FIGS. 4A and 4B, the support plate 333f of the columnar moving member 45 does not have a linear cam surface as an inclined surface on the lower surface, and the horizontal support surface 39f extends in the longitudinal direction (the moving direction of the slider 51).

如圖4A所示，當滑塊51位於初始位置時，柱狀移動元件45、周邊環狀移動元件31、中間環狀移動元件40至中間環狀移動元件43藉由安裝於滑塊51上部的半圓柱構件52的頂點52a(頂線)與水平支持面39a至水平支持面39f接觸而受到支持，各移動元件45、移動元件31、移動元件40至移動元件43的各前端面47、前端面38a至前端面38e位於自平台20的吸附面22突出了高度H0的第1位置，構成同一面(相對於吸附面22的階差面)。 As shown in FIG. 4A, when the slider 51 is at the initial position, the columnar moving member 45, the peripheral annular moving member 31, the intermediate annular moving member 40 to the intermediate annular moving member 43 are mounted on the upper portion of the slider 51. The apex 52a (top line) of the semi-cylindrical member 52 is supported in contact with the horizontal support surface 39a to the horizontal support surface 39f, and each of the moving member 45, the moving member 31, the moving member 40 to the front end face 47 of the moving member 43, and the front end face The 38a to the front end surface 38e is located at the first position where the height H 0 protrudes from the adsorption surface 22 of the stage 20, and constitutes the same surface (a step surface with respect to the adsorption surface 22).

參照圖5至圖20A~圖20F，對如以上說明般構成的半導體晶粒的拾取裝置500的動作進行說明。另外，以下的說明中，設移動元件30包含周邊環狀移動元件31、中間環狀移動元件40、柱狀移動元件45這3個移動元件來進行說明。此處，在對半導體晶粒15的拾取動作進行說明之前，對將貼附有半導體晶粒15的切割片材12設置(set)於晶圓固持器10上的步驟進行說明。 The operation of the semiconductor wafer pick-up device 500 configured as described above will be described with reference to FIGS. 5 to 20A to 20F. In the following description, the moving element 30 is described as including three moving elements of the peripheral annular moving element 31, the intermediate annular moving element 40, and the columnar moving element 45. Here, before the pickup operation of the semiconductor die 15 is described, the step of setting the dicing sheet 12 to which the semiconductor die 15 is attached is set on the wafer holder 10 will be described.

如圖5所示，晶圓11的背面貼附有黏接性的切割片材12，切割片材12被安裝於金屬製的環(ring)13上。晶圓11在如此般經由切割片材12而安裝於金屬製的環13的狀態下受到處理(handling)。並且，如圖6所示，晶圓11在切斷步驟中自表面側被切割鋸等切斷而成為各半導體晶粒15。在各半導體晶粒15之間，形成有在切割時形成的切入間隙14。切入間隙14的深度是自半導體晶粒15到達切割片材12的一部分為止，但切割片材12未被切斷，各半導體晶粒15由切割片材12予以保持。 As shown in FIG. 5, an adhesive cutting sheet 12 is attached to the back surface of the wafer 11, and the dicing sheet 12 is attached to a metal ring 13. The wafer 11 is handled in a state where the wafer 11 is attached to the metal ring 13 via the dicing sheet 12 as described above. Further, as shown in FIG. 6, the wafer 11 is cut by a dicing saw or the like from the surface side in the cutting step to form the respective semiconductor crystal grains 15. Between each of the semiconductor crystal grains 15, a cut-in gap 14 formed at the time of dicing is formed. The depth of the slit 14 is from the semiconductor die 15 to a portion of the dicing sheet 12, but the dicing sheet 12 is not cut, and each of the semiconductor dies 15 is held by the dicing sheet 12.

如此，安裝有切割片材12與環13的半導體晶粒15如圖7A、圖7B所示，被安裝於晶圓固持器10。晶圓固持器10包括：圓環狀的擴展環(expand ring)16，具備凸緣部；以及壓環17，將環13固定於擴展環16的凸緣上。壓環17由未圖示的壓環驅動部，在朝向擴展環16的凸緣進退的方向上予以驅動。擴展環16的內徑比配置有半導體晶粒15的晶圓的直徑大，擴展環16具備規定的厚度，凸緣位於擴展環16的外側，且以朝外側突出的方式而安裝於離開切割片材12的方向的端面側。而且，擴展環16的 切割片材12側的外周呈曲面結構，以使得在將切割片材12安裝於擴展環16時，可順利(smooth)地拉延切割片材12。如圖7B所示，貼附有半導體晶粒15的切割片材12在被設置於擴展環16之前呈大致平面狀態。 As described above, the semiconductor die 15 on which the dicing sheet 12 and the ring 13 are mounted is attached to the wafer holder 10 as shown in FIGS. 7A and 7B. The wafer holder 10 includes an annular expander ring 16 having a flange portion, and a pressure ring 17 for fixing the ring 13 to the flange of the extension ring 16. The pressure ring 17 is driven by a pressure ring driving portion (not shown) in a direction in which the flange of the expansion ring 16 advances and retreats. The inner diameter of the extension ring 16 is larger than the diameter of the wafer on which the semiconductor die 15 is disposed, the expansion ring 16 has a predetermined thickness, and the flange is located outside the expansion ring 16 and is attached to the separation piece so as to protrude outward. The end face side of the direction of the material 12. Moreover, the extension ring 16 The outer circumference of the side of the cut sheet 12 has a curved surface structure so that the cut sheet 12 can be smoothly drawn while the cut sheet 12 is attached to the expandable ring 16. As shown in FIG. 7B, the dicing sheet 12 to which the semiconductor crystal grains 15 are attached is in a substantially planar state before being disposed on the expansion ring 16.

如圖1所示，切割片材12在被設置於擴展環16時，沿著擴展環上部的曲面而被拉延擴展環16的上表面與凸緣面的階差量，因此在被固定於擴展環16上的切割片材12上，作用有自切割片材12的中心朝向周圍的拉伸力。而且，切割片材12因該拉伸力而延伸，因此貼附於切割片材12上的各半導體晶粒15間的間隙14擴大。 As shown in FIG. 1, when the cut sheet 12 is provided on the extension ring 16, the amount of step difference between the upper surface of the expansion ring 16 and the flange surface is drawn along the curved surface of the upper portion of the expansion ring, and thus is fixed to On the cut sheet 12 on the expansion ring 16, a tensile force from the center of the cut sheet 12 toward the periphery acts. Further, since the cut sheet 12 is extended by the tensile force, the gap 14 between the respective semiconductor crystal grains 15 attached to the cut sheet 12 is enlarged.

接下來，對半導體晶粒15的拾取動作進行說明。控制部150最先執行圖1所示的對位程式157。控制部150藉由晶圓固持器水平方向驅動部110來使晶圓固持器10沿水平方向移動至平台20的待機位置之上為止。然後，控制部150在使晶圓固持器10移動至平台20的待機位置之上的規定位置後，暫時停止晶圓固持器10的水平方向的移動。如先前所述，在初始狀態下，各移動元件45、移動元件31、移動元件40的各前端面47、前端面38a、前端面38b處於自平台20的吸附面22突出了高度H0的第1位置，因此控制部150藉由平台上下方向驅動部120來使平台20上升，直至各移動元件45、移動元件31、移動元件40的各前端面47、前端面38a、前端面38b密接至切割片材12的背面12b，且自吸附面22的開口23稍許離開的區域密接至切割片材12的背面12b 為止。並且，在各移動元件45、移動元件31、移動元件40的各前端面47、前端面38a、前端面38b及自吸附面22的開口23稍許離開的區域密接至切割片材12的背面12b後，控制部150停止平台20的上升。然後，控制部150再次藉由晶圓固持器水平方向驅動部110來調整水平位置，以使欲拾取的半導體晶粒15來到自平台20的吸附面22稍許突出的移動元件30的前端面(階差面)的正上方。 Next, the pickup operation of the semiconductor die 15 will be described. The control unit 150 first executes the alignment program 157 shown in Fig. 1 . The control unit 150 moves the wafer holder 10 in the horizontal direction above the standby position of the stage 20 by the wafer holder horizontal direction driving unit 110. Then, the control unit 150 temporarily stops the movement of the wafer holder 10 in the horizontal direction after moving the wafer holder 10 to a predetermined position above the standby position of the stage 20. As described above, in the initial state, each of the front end surface 47, the front end surface 38a, and the front end surface 38b of each of the moving element 45, the moving element 31, and the moving element 40 is in a state in which the height H 0 is projected from the suction surface 22 of the stage 20. Since the control unit 150 raises the stage 20 by the platform up-and-down direction driving unit 120 until each of the moving element 45, the moving element 31, and the moving element 40, the front end surface 38a and the front end surface 38b are in close contact with the cutting. The back surface 12b of the sheet 12 is adhered to the back surface 12b of the cut sheet 12 in a region slightly away from the opening 23 of the adsorption surface 22. Further, after the respective distal end faces 47, the distal end faces 38a, the distal end faces 38b of the moving elements 45, the moving elements 31, and the moving elements 40 and the opening 23 slightly separated from the opening 22 of the moving surface 22 are in close contact with the back surface 12b of the cut sheet 12, The control unit 150 stops the rise of the platform 20. Then, the control unit 150 adjusts the horizontal position again by the wafer holder horizontal direction driving unit 110 so that the semiconductor die 15 to be picked up comes to the front end surface of the moving member 30 slightly protruding from the adsorption surface 22 of the stage 20 ( Just above the step surface).

如圖8所示，半導體晶粒15的大小比平台20的開口23小，且比移動元件30的寬度或者縱深大，因此當平台20的位置調整結束時，半導體晶粒15的外周端處於平台20的開口23的內表面23a與移動元件30的外周面33之間、即處於開口23的內表面23a與移動元件30的外周面33之間的間隙d的正上方。在初始狀態下，平台20的槽26或者吸附面22的壓力為大氣壓，開口23的壓力亦為大氣壓。初始狀態下，各移動元件45、移動元件31、移動元件40的各前端面47、前端面38a、前端面38b處於自平台20的吸附面22突出了高度H0的第1位置，因此與各前端面47、前端面38a、前端面38b接觸的切割片材12的背面12b的高度亦處於自吸附面22突出了高度H0的第1位置。而且，在開口23的周緣，切割片材12的背面12b自吸附面22稍許浮起，而在離開開口23的區域，成為密接於吸附面22的狀態。當水平方向的位置調整結束後，控制部150藉由圖1所示的吸頭驅動部130來使吸頭18下降至半導體晶粒15上，使吸頭18的表面18a著落於半 導體晶粒15上。當吸頭18著落於半導體晶粒15上之後，控制部150藉由抽吸機構100的驅動部102來將三通閥101切換為使吸頭18的抽吸孔19與真空裝置140連通的方向。藉此，抽吸孔19成為真空，吸頭18將半導體晶粒15吸附固定至表面18a(對位程式結束)。此時，吸頭18的表面18a的高度如圖8所示，成為將各移動元件45、移動元件31、移動元件40的各前端面47、前端面38a、前端面38b的高度(自吸附面22算起的高度H0)加上切割片材12的厚度與半導體晶粒15的厚度所得的高度Hc。 As shown in FIG. 8, the size of the semiconductor die 15 is smaller than the opening 23 of the stage 20 and larger than the width or depth of the moving member 30, so that when the position adjustment of the stage 20 is completed, the outer peripheral end of the semiconductor die 15 is at the stage. The inner surface 23a of the opening 23 of the opening 20 and the outer peripheral surface 33 of the moving member 30, that is, directly above the gap d between the inner surface 23a of the opening 23 and the outer peripheral surface 33 of the moving member 30. In the initial state, the pressure of the groove 26 or the adsorption surface 22 of the stage 20 is atmospheric pressure, and the pressure of the opening 23 is also atmospheric pressure. Initially, each of the moving member 45, the movable member 31, the moving element of each front end face 40 of the 47, the distal end surface 38a, the front end face 38b in the self-suction surface of the platform 20 22 projecting height H of the first position 0, thus the respective the front end surface 47, the front end surface 38a, the cutting height of the back surface 38b of the sheet leading end 12b of the contact 12 is also projecting from the suction surface 22 of the first position of the height H 0. Further, at the periphery of the opening 23, the back surface 12b of the cut sheet 12 slightly floats from the adsorption surface 22, and is in a state of being in close contact with the adsorption surface 22 in a region away from the opening 23. When the positional adjustment in the horizontal direction is completed, the control unit 150 lowers the tip 18 onto the semiconductor die 15 by the tip driving unit 130 shown in FIG. 1, so that the surface 18a of the tip 18 is landed on the semiconductor die 15. on. After the tip 18 is landed on the semiconductor die 15, the control portion 150 switches the three-way valve 101 to the direction in which the suction hole 19 of the tip 18 communicates with the vacuum device 140 by the driving portion 102 of the suction mechanism 100. . Thereby, the suction hole 19 becomes a vacuum, and the suction head 18 adsorbs and fixes the semiconductor crystal grain 15 to the surface 18a (the alignment program ends). At this time, as shown in FIG. 8, the height of the surface 18a of the tip 18 is the height of each of the front end surface 47, the front end surface 38a, and the front end surface 38b of each of the moving element 45, the moving element 31, and the moving element 40 (self-adsorbing surface) The height H 0 calculated from 22 is added to the height H c obtained by cutting the thickness of the sheet 12 and the thickness of the semiconductor crystal 15 .

接下來，控制部150執行圖1所示的第1剝離程式158。控制部150在圖20D所示時刻t1，輸出將吸附壓力自接近大氣壓的第4壓力P4切換為接近真空的第3壓力P3的指令。根據該指令，吸附壓力切換機構90的驅動部92將三通閥91切換為使吸附孔27與真空裝置140連通的方向。於是，如圖9的箭頭201所示，槽26的空氣通過吸附孔27被吸出至真空裝置140，如圖20D所示，在時刻t2，吸附壓力成為接近真空的第3壓力P3。並且，開口23周緣的切割片材12的背面12b如圖9的箭頭202所示，被真空吸附至吸附面22的表面。各移動元件45、移動元件31、移動元件40的各前端面47、前端面38a、前端面38b處於自平台20的吸附面22突出了高度H0的第1位置，因此對切割片材12施加朝斜下的拉伸力F1。該拉伸力F1可分解為朝橫方向拉伸切割片材12的拉伸力F2與朝下方向拉伸切割片材12的拉伸力F3。橫方向的拉伸力P2使半導體晶粒15與切割片材12的表面12a之間產生剪切 應力τ。因該剪切應力τ，在半導體晶粒15的外周部分或周邊部分與切割片材12的表面12a之間發生偏離。該偏離成為切割片材12與半導體晶粒15的外周部分或周邊部分的剝離的契機。 Next, the control unit 150 executes the first peeling program 158 shown in Fig. 1 . The control unit 150 outputs a command to switch the adsorption pressure from the fourth pressure P 4 close to the atmospheric pressure to the third pressure P 3 close to the vacuum at time t 1 shown in FIG. 20D. According to this command, the drive unit 92 of the adsorption pressure switching mechanism 90 switches the three-way valve 91 to a direction in which the adsorption hole 27 communicates with the vacuum device 140. Thus, as shown by arrow 201 in FIG. 9, the air tank 26 through the suction holes 27 is sucked to the vacuum means 140, as shown in FIG. 20D, at time t 2, the vacuum suction pressure becomes close to a third pressure P 3. Further, the back surface 12b of the cut sheet 12 at the periphery of the opening 23 is vacuum-adsorbed to the surface of the adsorption surface 22 as indicated by an arrow 202 in FIG. Each moving element 45, the movable member 31, the moving element of each front end face 40 of the 47, the distal end surface 38a, the front end face 38b in the self-suction surface of the platform 20 22 projecting height H of the first position 0, thus applied to the cut sheet 12 The downward tensile force F 1 . The tensile force F 1 can be decomposed into a tensile force F 2 that stretches the cut sheet 12 in the lateral direction and a tensile force F 3 that stretches the cut sheet 12 in the downward direction. The tensile force P 2 in the transverse direction causes a shear stress τ between the semiconductor crystal grains 15 and the surface 12a of the dicing sheet 12. Due to the shear stress τ, a deviation occurs between the outer peripheral portion or the peripheral portion of the semiconductor die 15 and the surface 12a of the dicing sheet 12. This deviation becomes a trigger for peeling of the cut sheet 12 and the outer peripheral portion or the peripheral portion of the semiconductor die 15.

控制部150如圖20D所示，在時刻t2吸附壓力成為接近真空的第3壓力P3後，保持規定的時間，並如圖20E所示，在時刻t3輸出將開口壓力自接近大氣壓的第2壓力P2切換為接近真空的第1壓力P1的指令。根據該指令，開口壓力切換機構80的驅動部82將三通閥81切換為使開口23與真空裝置140連通的方向。於是，如圖10的箭頭206所示，開口23的空氣被抽吸至真空裝置140，如圖20E所示，在時刻t4，開口壓力成為接近真空的第1壓力P1。藉此，如圖10的箭頭203所示，位於開口23的內表面23a與移動元件30的外周面33的間隙d正上方的切割片材12朝下側受到拉伸。而且，位於間隙d正上方的半導體晶粒15的周邊部被切割片材12拉伸，從而如箭頭204所示般朝下彎曲變形。藉此，半導體晶粒15的周邊部離開吸頭18的表面18a。在時刻t2，當吸附壓力成為接近真空的第3壓力P3時，由於在半導體晶粒15的外周部分與切割片材12的表面12a之間發生的偏離，在半導體晶粒15的周邊部形成自切割片材12的表面12a剝離的契機，因此半導體晶粒15的周邊部如圖10的箭頭204所示一邊發生彎曲變形，一邊自切割片材12的表面12a開始剝離。另外，如圖20E的虛線所示，開口壓力切換機構80的驅動部82亦可輸出下述指令，該指令是在時刻t3與時刻t6的期間，在接近大氣壓的第2壓 力P2與接近真空的第1壓力P1之間多次切換開口壓力。藉此，可更確實地進行切割片材12的表面12a與半導體晶粒15的剝離。 The control unit 150 shown in FIG. 20D, at time t 2 becomes the suction pressure of the third pressure P 3 near vacuum, holding a predetermined period of time, and as illustrated, at time t 3 from the output 20E of the opening pressure close to atmospheric pressure The second pressure P 2 is switched to a command close to the first pressure P 1 of the vacuum. According to this command, the drive unit 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 to a direction in which the opening 23 communicates with the vacuum device 140. Thus, as shown by arrow 206 in FIG. 10, the air is sucked into the opening 23 of the vacuum means 140, as shown in FIG. 20E, at time t 4, the opening pressure reaches a first pressure close to a vacuum 1 P 1. Thereby, as shown by the arrow 203 of FIG. 10, the cut sheet 12 located directly above the gap d between the inner surface 23a of the opening 23 and the outer peripheral surface 33 of the moving element 30 is stretched toward the lower side. Moreover, the peripheral portion of the semiconductor die 15 located directly above the gap d is stretched by the cut sheet 12 to be bent downward as shown by the arrow 204. Thereby, the peripheral portion of the semiconductor die 15 is separated from the surface 18a of the tip 18. At the time t 2 , when the adsorption pressure becomes the third pressure P 3 close to the vacuum, the deviation occurs between the outer peripheral portion of the semiconductor die 15 and the surface 12a of the dicing sheet 12 at the peripheral portion of the semiconductor die 15. Since the surface 12a of the cut sheet 12 is peeled off, the peripheral portion of the semiconductor die 15 is bent and deformed as shown by an arrow 204 in Fig. 10, and peeling starts from the surface 12a of the cut sheet 12. Further, as shown by a broken line in Fig. 20E, the drive unit 82 of the opening pressure switching mechanism 80 may also output a command for the second pressure P 2 close to the atmospheric pressure during the period from time t 3 to time t 6 . The opening pressure is switched a plurality of times between the first pressure P 1 close to the vacuum. Thereby, peeling of the surface 12a of the cut sheet 12 and the semiconductor crystal grain 15 can be performed more reliably.

如圖10所示，當半導體晶粒15的周邊部離開吸頭18的表面18a時，如圖10的箭頭205所示，空氣流入成為真空的吸頭18的抽吸孔19中。流入的空氣流量(空氣洩漏量)由流量感測器106予以檢測。如圖20E所示，自時刻t3朝向時刻t4，隨著開口壓力自接近大氣壓的第2壓力P2下降至接近真空的第1壓力P1，半導體晶粒15與切割片材12一同朝下方向受到拉伸而彎曲變形，因此如圖20F所示，流入吸頭18的抽吸孔19內的空氣洩漏量自時刻t3朝向時刻t4而增加。 As shown in FIG. 10, when the peripheral portion of the semiconductor die 15 is separated from the surface 18a of the tip 18, as indicated by an arrow 205 in FIG. 10, air flows into the suction hole 19 of the suction head 18 which becomes a vacuum. The inflowing air flow rate (air leakage amount) is detected by the flow sensor 106. As shown in FIG. 20E, toward the time from time t 3 t 4, as close to the opening of the pressure from the second pressure P 2 decreases to near atmospheric pressure in a first vacuum 1 P 1, the semiconductor die 15 and the dicing sheet 12 together toward Since the lower direction is stretched and bent and deformed, the amount of air leakage into the suction hole 19 of the suction head 18 increases from the time t 3 toward the time t 4 as shown in Fig. 20F.

控制部150如圖20E、圖20D所示，在時刻t4至時刻t5的期間，將平台20的開口23與槽26或吸附面22分別保持為接近真空的第1壓力P1、第3壓力P3。在此期間，如圖11的箭頭207所示，半導體晶粒15的周邊部藉由吸頭18的抽吸孔19的真空與半導體晶粒15的彈性而返回至吸頭18的表面18a。隨著半導體晶粒15的周邊部朝向吸頭18的表面18a，如圖20F的時刻t4至時刻t5所示，流入吸頭18的抽吸孔19內的空氣洩漏量減少，在時刻t5，如圖11所示，當半導體晶粒15被真空吸附至吸頭18的表面18a時，空氣洩漏量為零(zero)。此時，半導體晶粒15的周邊部自位於間隙d正上方的切割片材12的表面12a剝離(初始剝離步驟)。在半導體晶粒15的周邊部自切割片材12的表面12a初始剝離時，位於開口23的間隙d正上方的切割片材12朝下方 向位移。控制部150藉由片材位移檢測感測器107來檢測切割片材12朝向下方向的位移(相對於吸附面22的接離方向的位移)，當檢測出的位移超過規定的臨限值時，判斷為半導體晶粒15的周邊部自位於間隙d正上方的切割片材12的表面12a發生了初始剝離。而且，當檢測出的位移為規定的臨限值以下時，判斷為半導體晶粒15的周邊部未自位於間隙d正上方的切割片材12的表面12a發生初始剝離(第1剝離判斷步驟)。控制部150在判斷為半導體晶粒15的周邊部發生了初始剝離時，前進至下個剝離步驟。而且，控制部150在判斷為半導體晶粒15的周邊部未發生初始剝離時，執行第1重試步驟。 The control unit 150 in FIG. 20E, FIG. 20D, during the time t 4 to time t 5, and 22 will be maintained at a first pressure close to a vacuum P 1, respectively, the third opening 20 of the platform 26 or suction surface 23 and the groove Pressure P 3 . During this period, as shown by an arrow 207 of FIG. 11, the peripheral portion of the semiconductor die 15 is returned to the surface 18a of the tip 18 by the vacuum of the suction hole 19 of the tip 18 and the elasticity of the semiconductor die 15. With the peripheral portion of the semiconductor die 15 toward the surface of the suction head 18 18a, FIG. 20F time t 4 of time t 5 as shown to reduce the amount of air leakage in the suction holes 19 flows into the suction head 18 at time t 5 , as shown in Fig. 11, when the semiconductor die 15 is vacuum-adsorbed to the surface 18a of the tip 18, the amount of air leakage is zero. At this time, the peripheral portion of the semiconductor crystal grain 15 is peeled off from the surface 12a of the dicing sheet 12 located directly above the gap d (initial peeling step). When the peripheral portion of the semiconductor die 15 is initially peeled off from the surface 12a of the cut sheet 12, the cut sheet 12 located directly above the gap d of the opening 23 is displaced downward. The control unit 150 detects the displacement of the cut sheet 12 in the downward direction (displacement with respect to the direction of separation of the adsorption surface 22) by the sheet displacement detecting sensor 107, and when the detected displacement exceeds a prescribed threshold value, It is determined that the peripheral portion of the semiconductor crystal grain 15 is initially peeled off from the surface 12a of the dicing sheet 12 located directly above the gap d. When the detected displacement is equal to or less than a predetermined threshold value, it is determined that the peripheral portion of the semiconductor crystal grain 15 is not initially peeled off from the surface 12a of the dicing sheet 12 located directly above the gap d (first peeling determination step) . When the control unit 150 determines that the peripheral portion of the semiconductor die 15 has been initially peeled off, the control unit 150 proceeds to the next peeling step. Further, when the control unit 150 determines that the initial peeling of the peripheral portion of the semiconductor die 15 is not performed, the first retry step is executed.

第1重試步驟中，控制部150切換開口壓力切換機構80、吸附壓力切換機構90的各三通閥81、三通閥91，以使大氣與開口23、槽26連通，將開口壓力與吸附壓力設為接近大氣壓的第2壓力P2、第4壓力P4後，再次切換開口壓力切換機構80、吸附壓力切換機構90的各三通閥81、三通閥91，以使真空裝置140與開口23、槽26連通，將開口壓力與吸附壓力分別自接近大氣壓的第2壓力P2、第4壓力P4切換為接近真空的第1壓力P1、第3壓力P3，並判斷由片材位移檢測感測器107檢測出的位移是否超過規定的臨限值。並且，在檢測出的位移超過規定的位移時，結束第1重試步驟，並前進至下個剝離步驟(第1剝離程式結束)。 In the first retry step, the control unit 150 switches the opening pressure switching mechanism 80, the three-way valve 81 of the adsorption pressure switching mechanism 90, and the three-way valve 91 so that the atmosphere communicates with the opening 23 and the groove 26, and the opening pressure and adsorption are performed. After the pressure is set to the second pressure P 2 and the fourth pressure P 4 close to the atmospheric pressure, the opening pressure switching mechanism 80, the three-way valve 81 of the adsorption pressure switching mechanism 90, and the three-way valve 91 are switched again so that the vacuum device 140 and the vacuum device 140 The opening 23 and the groove 26 are connected to each other, and the opening pressure and the adsorption pressure are respectively switched from the second pressure P 2 and the fourth pressure P 4 close to the atmospheric pressure to the first pressure P 1 and the third pressure P 3 close to the vacuum, and the sheet is judged to be a piece. Whether the displacement detected by the material displacement detecting sensor 107 exceeds a prescribed threshold value. Then, when the detected displacement exceeds a predetermined displacement, the first retry step is ended, and the process proceeds to the next peeling step (the first peeling program ends).

接下來，控制部150執行圖1所示的第3剝離程式160。另外，後文說明第2剝離程式。控制部150如圖20E、圖20D所 示，將開口壓力與吸附壓力分別保持為接近真空的第1壓力P1、第3壓力P3規定時間後，在時刻t5輸出將開口壓力、吸附壓力分別自接近真空的第1壓力P1、第3壓力P3切換為接近大氣壓的第2壓力P2、第4壓力P4的指令。根據該指令，開口壓力切換機構80的驅動部82、吸附壓力切換機構90的驅動部92切換各三通閥81、三通閥91，以使向大氣開放的配管85、配管95與開口23、槽26連通。藉此，如圖12所示的箭頭210、箭頭211般，空氣流入至開口23、槽26內，因此如圖20D、圖20F所示，自時刻t5朝向時刻t6，開口壓力與吸附壓力自接近真空的第1壓力P1、第3壓力P3上升至接近大氣壓的第2壓力P2、第4壓力P4。 Next, the control unit 150 executes the third peeling program 160 shown in Fig. 1 . In addition, the second peeling program will be described later. The control unit 150 in FIG. 20E, FIG. 20D, the opening pressure and suction pressure are maintained at near vacuum pressure of 1 P 1, the third pressure P 3 for a predetermined time after the time t 5 the output of the opening pressure, the adsorption pressure The first pressure P 1 and the third pressure P 3 which are close to the vacuum are respectively switched to the command of the second pressure P 2 and the fourth pressure P 4 which are close to the atmospheric pressure. According to the command, the drive unit 82 of the opening pressure switching mechanism 80 and the drive unit 92 of the adsorption pressure switching mechanism 90 switch the three-way valve 81 and the three-way valve 91 so that the pipe 85, the pipe 95, and the opening 23 that are open to the atmosphere are The slots 26 are in communication. Accordingly, the arrow 210 shown in Figure 12, as arrow 211, air flows into the opening 23, the groove 26, as shown in FIG 2OD therefore, as shown in FIG. 20F, since the time t. 6, the opening 5 towards the pressure and suction pressure at time t The first pressure P 1 and the third pressure P 3 from the approaching vacuum rise to the second pressure P 2 and the fourth pressure P 4 which are close to the atmospheric pressure.

當開口壓力、吸附壓力上升至接近大氣壓的第2壓力P2、第4壓力P4時，因真空而朝下方向被拉伸的位於間隙d正上方的切割片材12如圖12的箭頭212所示，因在固定於晶圓固持器10時施加的拉伸力而朝上方向返回。而且，開口23周緣的切割片材12因所述拉伸力而成為自吸附面22稍許浮起的狀態。 When the opening pressure and the adsorption pressure rise to the second pressure P 2 and the fourth pressure P 4 which are close to the atmospheric pressure, the cut sheet 12 which is stretched downward in the downward direction due to the vacuum and which is located above the gap d is the arrow 212 in FIG. As shown, it returns upward in the upward direction due to the tensile force applied when it is fixed to the wafer holder 10. Further, the cut sheet 12 at the periphery of the opening 23 is slightly raised from the adsorption surface 22 due to the tensile force.

控制部150如圖20E、圖20D所示，在時刻t6開口壓力、吸附壓力成為接近大氣壓的第2壓力P2、第4壓力P4後，如圖20C所示，輸出下述指令，該指令是將周邊環狀移動元件31的前端面38a的高度設為自第1位置(自吸附面22算起的高度為H0的初始位置)低了高度H1的第2位置。根據該指令，圖1所示的驅動部25的馬達77如圖1所示的箭頭a般沿逆時針方向旋轉。藉此，連桿構件60如圖1所示的箭頭c般沿順時針方向旋轉，滑塊51如 圖1所示的箭頭A般朝右開始移動。 The control unit 150 in FIG. 20E, FIG. 20D, the opening of the pressure at time t 6, the suction pressure becomes close to the atmospheric second pressure P 2, the fourth pressure P 4, and outputs the following command as shown in FIG. 20C, the instruction is outside the front end face 31 of the annular movable member 38a is a height from the first position (22 counting from the suction surface of the height H 0 of the initial position) lower height H 1 of the second position. According to this command, the motor 77 of the drive unit 25 shown in Fig. 1 rotates in the counterclockwise direction as indicated by an arrow a shown in Fig. 1 . Thereby, the link member 60 rotates in the clockwise direction like the arrow c shown in FIG. 1, and the slider 51 starts moving toward the right like the arrow A shown in FIG.

如圖4B所示，在初始狀態下，安裝於滑塊51上部的半圓柱構件52的頂點52a接觸至周邊環狀移動元件31、中間環狀移動元件40、柱狀移動元件45的各水平支持面39a、水平支持面39b、水平支持面39f，各移動元件31、移動元件40的各環狀構件33a、環狀構件33b的各前端面38a、前端面38b以及柱狀移動元件45的柱狀構件46的前端面47處於自吸附面22高了高度H0的第1位置(初始位置)。此處，當滑塊51如圖4B所示的箭頭A般自基準位置朝右移動時，半圓柱構件52的頂點52a頂住周邊環狀移動元件31的直線凸輪面35a。然後，當滑塊51進而朝右移動時，直線凸輪面35a自水平支持面39a朝上上升，與此相應地，周邊環狀移動元件31整體朝下方向下降。如圖4B所示，當滑塊51自基準位置朝右移動距離L1時，滑塊51的頂點52a支持著周邊環狀移動元件31的直線凸輪面35a的點i1。點i1在圖4B上位於自水平支持面39a朝上側算起為高度H1處，因此周邊環狀移動元件31整體上較當初的第1位置朝下側移動高度H1，如圖13的箭頭214所示，周邊環狀移動元件31的前端面38a亦移動至自第1位置(初始位置)朝下側算起為高度H1且比吸附面22稍低的第2位置(自吸附面22低了高度(H1-H0)的位置)。此時，中間環狀移動元件41是由水平支持面39b予以支持，因此如圖13所示，其前端面38b的高度仍處於第1位置(初始位置)。同樣，柱狀移動元件45亦由水平支持面39f予以支持，因此前端面47的高度 亦仍處於第1位置(初始位置)。前端面38a與前端面38b、前端面47是彼此存在階差的階差面。而且，各前端面38a、前端面38b、前端面47分別成為相對於吸附面22的階差面。當滑塊51自基準位置朝右移動距離L1後，控制部150停止馬達77的旋轉。 As shown in FIG. 4B, in the initial state, the apex 52a of the semi-cylindrical member 52 attached to the upper portion of the slider 51 contacts the horizontal support of the peripheral annular moving member 31, the intermediate annular moving member 40, and the columnar moving member 45. The surface 39a, the horizontal support surface 39b, the horizontal support surface 39f, the respective annular members 33a of the moving element 31, the moving element 40, the front end surface 38a of the annular member 33b, the distal end surface 38b, and the columnar moving element 45 are columnar The front end surface 47 of the member 46 is at a first position (initial position) from the adsorption surface 22 by a height H 0 . Here, when the slider 51 moves to the right from the reference position as the arrow A shown in FIG. 4B, the apex 52a of the semi-cylindrical member 52 bears against the linear cam surface 35a of the peripheral annular moving member 31. Then, when the slider 51 is further moved to the right, the linear cam surface 35a rises upward from the horizontal support surface 39a, and accordingly, the peripheral annular moving element 31 as a whole descends downward. 4B, the slider 51 from the reference position when the movement distance L 1 is rightward, the apex 51 of the slider 52a supporting the peripheral annular mobile element 31 of the linear cam surface 35a of the point i 1. The point i 1 is located at a height H 1 from the horizontal support surface 39a toward the upper side in FIG. 4B, so that the peripheral annular moving element 31 as a whole moves the height H 1 toward the lower side from the original first position, as shown in FIG. arrows, outside the distal end surface 38a of the annular member 31 is also moved to move from the first position (initial position), counting down the side slightly lower height H 1 and the suction surface 22 than the second position 214 (from the suction surface 22 is lower than the height (H 1 -H 0 ) position). At this time, since the intermediate annular moving element 41 is supported by the horizontal support surface 39b, the height of the front end surface 38b is still at the first position (initial position) as shown in FIG. Similarly, the columnar moving member 45 is also supported by the horizontal supporting surface 39f, so that the height of the front end face 47 is still at the first position (initial position). The front end surface 38a, the front end surface 38b, and the front end surface 47 are step surfaces having a step difference from each other. Further, each of the distal end surface 38a, the distal end surface 38b, and the distal end surface 47 serves as a step surface with respect to the adsorption surface 22. When the slider 51 is moved to the right by the distance L 1 from the reference position, the control unit 150 stops the rotation of the motor 77.

接下來，控制部150在時刻t6輸出將吸附壓力自接近大氣壓的第4壓力P4切換為接近真空的第3壓力P3的指令。根據該指令，吸附壓力切換機構90的驅動部92切換三通閥91，以使槽26與真空裝置140連通。藉此，如圖13的箭頭213所示，槽26的空氣朝向真空裝置140受到抽吸，槽26的壓力以及吸附面22的吸附壓力成為接近真空的第3壓力P3，切割片材12被真空吸附至吸附面22。此時，如圖20E所示，開口23的壓力成為接近大氣壓的第2壓力P2，因此在位於間隙d正上方的切割片材12的背面12b與周邊環狀移動元件31的前端面38a之間空出有間隙。 Next, the control unit 150 at time t 6 the output from the suction pressure close to the atmospheric pressure P 4 3 4 switched to the near-vacuum pressure P 3 of the instruction. According to this instruction, the drive unit 92 of the adsorption pressure switching mechanism 90 switches the three-way valve 91 to connect the groove 26 with the vacuum device 140. Whereby, as shown by arrow 13, toward the air tank 26 by the vacuum suction device 213 140 suction pressure, suction pressure channel 26 and the third surface 22 to become close to a vacuum pressure P 3, the sheet 12 is cut The vacuum is adsorbed to the adsorption face 22. At this time, as shown in FIG. 20E, since the pressure of the opening 23 becomes the second pressure P 2 close to the atmospheric pressure, the back surface 12b of the cut sheet 12 located directly above the gap d and the front end surface 38a of the peripheral annular moving member 31 are There is a gap between the spaces.

控制部150如圖20E所示，在時刻t7輸出將開口壓力自接近大氣壓的第2壓力P2切換為接近真空的第1壓力P1的指令。根據該指令，開口壓力切換機構80的驅動部82切換三通閥81，以使開口23與真空裝置140連通。藉此，如圖14的箭頭215所示，開口23中的空氣被抽吸至真空裝置140，在時刻t8，如圖20E所示，開口壓力成為接近真空的第1壓力P1。當開口壓力自接近大氣壓的第2壓力下降至接近真空的第1壓力P1時，位於周邊環狀移動元件31的前端面38a正上方(相向)的切割片材12如圖14的箭頭216所示，朝下側受到拉伸，以使背面12b接觸至前端 面38a。藉此，如圖14的箭頭217所示，半導體晶粒15中的位於前端面38a正上方的半導體晶粒15的一部分朝下方向彎曲變形而離開吸頭18的表面18a，空氣流入至吸頭18的抽吸孔19中。流入至抽吸孔19內的空氣洩漏量是由圖1所示的流量感測器106予以檢測。空氣洩漏量如圖20F所示，在開口壓力下降的時刻t7至時刻t8的期間內增加。 The control unit 150 shown in FIG. 20E, at time t 7 from the output of the opening pressure close to the atmospheric pressure of the second pressure P 2 is switched to a first pressure close to a vacuum of 1 P command. According to this command, the drive unit 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 so that the opening 23 communicates with the vacuum device 140. Whereby, as shown by arrow 21,514, and the opening 23 air is sucked into the vacuum apparatus 140, at time t 8, FIG. 20E, the opening pressure reaches a first pressure close to a vacuum P 1. When the cut sheet toward the second opening of the pressure from the atmospheric pressure down to near-vacuum pressure of 1 P 1, the annular peripheral surface at the front 38a of the movable member 31 directly above the (opposing) arrow 12 in FIG. 14 216 It is shown that it is stretched toward the lower side so that the back surface 12b contacts the front end surface 38a. Thereby, as shown by an arrow 217 in FIG. 14, a part of the semiconductor crystal grain 15 located directly above the front end surface 38a of the semiconductor crystal grain 15 is bent and deformed in the downward direction to leave the surface 18a of the suction head 18, and the air flows into the suction head. In the suction hole 19 of 18. The amount of air leakage into the suction hole 19 is detected by the flow sensor 106 shown in Fig. 1. As shown in FIG. 20F, the amount of air leakage increases during the period from time t 7 to time t 8 when the opening pressure drops.

控制部150在到達時刻t8時，如圖20E、圖20D所示，輸出下述指令，該指令是使開口壓力、吸附壓力分別自接近真空的第1壓力P1、第3壓力P3上升至接近大氣壓的第2壓力P2、第4壓力P4。根據該指令，開口壓力切換機構80的驅動部82切換三通閥81，以使開口23與向大氣開放的配管85連通。而且，吸附壓力切換機構90的驅動部92切換三通閥91，以使槽26與向大氣開放的配管95連通。藉此，如圖15中的箭頭220、箭頭221所示，空氣流入開口23、槽26內，如圖20E、圖20D所示，開口23的壓力、槽26的壓力或吸附面22的壓力分別上升至接近大氣壓的第2壓力P2、第4壓力P4。藉此，如圖15的箭頭223所示，間隙d正上方的切割片材12離開周邊環狀移動元件31的前端面38a而朝上方向位移。而且，與前端面38a相向的區域的半導體晶粒15伴隨著切割片材12朝向上方向的位移，而如圖15所示的箭頭224般朝向吸頭18的表面18a返回。當半導體晶粒15接近吸頭18的表面18a時，如圖20F的時刻t8至時刻t9的期間般，流入至吸頭18的抽吸孔19內的空氣洩漏量開始下降，在圖20F的時 刻t9，空氣洩漏量為零。此時，半導體晶粒15被真空吸附至吸頭18的表面18a，與前端面38a相向的半導體晶粒15的區域自切割片材12的表面12a剝離(第一次的第3剝離步驟)。 The control unit 150 reaches the time t 8, FIG. 20E, FIG. 20D, the output of the following instructions is to make the opening of the pressure, respectively suction pressure close to a vacuum pressure from the first 1 P 1, the third pressure P 3 rises The second pressure P 2 and the fourth pressure P 4 close to the atmospheric pressure. According to this command, the drive unit 82 of the opening pressure switching mechanism 80 switches the three-way valve 81 so that the opening 23 communicates with the pipe 85 that is open to the atmosphere. Further, the drive unit 92 of the adsorption pressure switching mechanism 90 switches the three-way valve 91 so that the groove 26 communicates with the pipe 95 that is open to the atmosphere. Thereby, as shown by an arrow 220 and an arrow 221 in Fig. 15, the air flows into the opening 23 and the groove 26, as shown in Figs. 20E and 20D, the pressure of the opening 23, the pressure of the groove 26, or the pressure of the adsorption surface 22, respectively. The second pressure P 2 and the fourth pressure P 4 are raised to near atmospheric pressure. Thereby, as shown by the arrow 223 of FIG. 15, the cut sheet 12 directly above the gap d is displaced upward in the upward direction away from the front end surface 38a of the peripheral annular moving element 31. Further, the semiconductor crystal grain 15 in the region facing the front end surface 38a is displaced toward the upper direction of the cut sheet 12, and is returned toward the surface 18a of the tip 18 as indicated by an arrow 224 shown in FIG. When the semiconductor grains 15 near the surface 18a of the tip 18, as shown in FIG 20F, the time t to the time t. 8 to 9 during the like, flows into the air leakage amount in the suction hole 19 of the suction head 18 starts to decrease, 20F in FIG. At time t 9 , the amount of air leakage is zero. At this time, the semiconductor crystal grain 15 is vacuum-adsorbed to the surface 18a of the tip 18, and the region of the semiconductor crystal grain 15 facing the front end surface 38a is peeled off from the surface 12a of the cut sheet 12 (the first third peeling step).

在時刻t9，控制部150輸出下述指令，該指令是將中間環狀移動元件40的前端面38b移動至自第1位置(自吸附面22算起的高度為H0的位置)低了高度H1的第2位置。根據該指令，首先與使周邊環狀移動元件31的前端面38a自第1位置移動至第2位置的情況同樣，根據該指令，圖1所示驅動部25的馬達77如圖1所示的箭頭a般沿逆時針方向旋轉。然後，滑塊51如圖4B所示，朝右方向移動至自基準位置算起的距離為L2的位置為止(朝右方向移動距離(L2-L1))。於是，如圖4B所示，安裝於滑塊51的半圓柱構件52的頂點(頂線)52a在圖4B所示的點i2處接觸至中間環狀移動元件40的直線凸輪面35b，在點j2處接觸至周邊環狀移動元件31的直線凸輪面35a。因此，如圖16的箭頭227所示，中間環狀移動元件40的前端面38b移動至自第1位置(自吸附面高了高度H0的位置)低了高度H1的第2位置(自吸附面22低了H1-H0的位置)。而且，如圖16的箭頭226所示，位於第2位置的周邊環狀移動元件31的前端面38a移動至自第1位置(初始位置)低了高度H2的第3位置(自吸附面22低了H2-H0的位置)。前端面38a、前端面38b、前端面47為彼此存在階差的階差面，同時為相對於吸附面22的階差面。 At time t 9, the control unit 150 outputs the following instruction, which is the front end face 40 of the intermediate annular element 38b moves to move from the first position (height from the suction surface 22 of the counting positions 0 to H) low The second position of height H 1 . According to this command, first, similarly to the case where the distal end surface 38a of the peripheral annular moving element 31 is moved from the first position to the second position, the motor 77 of the driving unit 25 shown in Fig. 1 is as shown in Fig. 1 . The arrow a rotates counterclockwise. Then, as shown in FIG. 4B, the slider 51 moves in the right direction until the distance from the reference position is L 2 (the distance (L 2 - L 1 ) is moved in the right direction). Then, as shown in Fig. 4B, the apex (top line) 52a of the semi-cylindrical member 52 attached to the slider 51 contacts the linear cam surface 35b of the intermediate annular moving member 40 at the point i 2 shown in Fig. 4B, The point j 2 is in contact with the linear cam surface 35a of the peripheral annular moving element 31. Thus, as shown by arrow 227 in FIG. 16, the distal end surface of the intermediate annular element 40 is moved 38b to move from the first position (height from the high suction surface position H 0) of the lower height H 1 of the second position (from The adsorption surface 22 is lower than the position of H 1 -H 0 ). Further, as shown by an arrow 226 in Fig. 16, the distal end surface 38a of the peripheral annular moving element 31 located at the second position moves to a third position (self-adsorbing surface 22) having a height H 2 lower than the first position (initial position). The position of H 2 -H 0 is lowered). The front end surface 38a, the front end surface 38b, and the front end surface 47 are step surfaces having a step difference from each other and a step surface with respect to the adsorption surface 22.

而且，控制部150如圖20D所示，在時刻t9輸出將吸附 壓力自接近大氣壓的第4壓力P4切換為接近真空的第3壓力P3的指令，並如圖20E所示，在自時刻t9經過規定時間後的時刻t10，輸出將開口壓力自接近大氣壓的第2壓力P2切換為接近真空的第1壓力P1的指令。根據該指令，吸附壓力切換機構90的驅動部92、開口壓力切換機構80的驅動部82分別切換三通閥81、三通閥91，以使槽26、開口23分別與真空裝置140連通。藉此，如圖17的箭頭225、箭頭228所示，槽26的空氣與開口23的空氣被抽吸至真空裝置140，開口壓力、吸附壓力在時刻t11分別成為接近真空的第1壓力P1、第3壓力P3。於是，如圖17所示的箭頭229、箭頭230般，切割片材12朝向下降至第3位置的周邊環狀移動元件31的前端面38a、下降至第2位置的中間環狀移動元件40的前端面38b受到拉伸，並朝下方向位移。伴隨於此，與前端面38a、前端面38b相向的半導體晶粒15的區域亦如圖17的箭頭231所示，離開吸頭18的表面18a而朝下彎曲變形。於是，如圖17的箭頭232所示，空氣自吸頭18的表面18a與半導體晶粒15之間流入至抽吸孔19。藉此，如圖20F所示，在時刻t10至時刻t11的期間，流入至吸頭18的抽吸孔19內的空氣洩漏量增加。 Further, the control unit 150 shown in FIG. 20D, at time t 9 the output pressure from near atmospheric pressure to a fourth pressure P 4 is switched to the third pressure command P 3 near vacuum adsorption, and as shown in FIG. 20E, since the second pressure time t 9 after the lapse of a predetermined time t 10, the output from the opening of the pressure close to atmospheric pressure P 2 is switched to the first command a near vacuum of P. According to this command, the drive unit 92 of the adsorption pressure switching mechanism 90 and the drive unit 82 of the opening pressure switching mechanism 80 respectively switch the three-way valve 81 and the three-way valve 91 so that the groove 26 and the opening 23 communicate with the vacuum device 140, respectively. Accordingly, the arrow 225 in FIG. 17, arrows, air tank 26 and the air opening 23 is drawn to a vacuum apparatus 228 140, the opening pressure, suction pressure, respectively, at time t 11 becomes close to a vacuum pressure of 1 P 1. The third pressure P 3 . Then, as shown by an arrow 229 and an arrow 230 shown in FIG. 17, the cut sheet 12 is directed toward the front end surface 38a of the peripheral annular moving element 31 which is lowered to the third position, and the intermediate endless moving element 40 which is lowered to the second position. The front end face 38b is stretched and displaced downward. As a result, the region of the semiconductor crystal grain 15 facing the front end surface 38a and the front end surface 38b is also bent downward and deformed as shown by an arrow 231 in Fig. 17 away from the surface 18a of the tip 18. Then, as indicated by an arrow 232 in Fig. 17, air flows from the surface 18a of the tip 18 and the semiconductor die 15 to the suction hole 19. Accordingly, as shown in FIG. 20F, the period from time t 10 to time t 11, and flows into the tip leakage of air suction holes 19 within 18 increases.

控制部150如圖20E、圖20D所示，在時刻t11輸出下述指令，該指令是將開口壓力、吸附壓力自分別接近真空的第1壓力P1、第3壓力P3切換為分別接近大氣壓的第2壓力P2、第4壓力P4。根據該指令，吸附壓力切換機構90的驅動部92、開口壓力切換機構80的驅動部82分別切換三通閥81、三通閥91，以 使槽26、開口23分別與向大氣開放的配管85、配管95連通。於是，如圖18的箭頭241、箭頭242所示，空氣流入至開口23、槽26，開口壓力、吸附壓力上升，因此切割片材12如圖18所示的箭頭243所示，朝上方向位移。藉由切割片材12朝上方向的位移與吸頭18的抽吸孔19的真空，半導體晶粒15靠近吸頭18的表面18a，因此如圖20F所示，在時刻t11至時刻t12的期間，流入至抽吸孔19的空氣洩漏量減少，最終，在半導體晶粒15被真空吸附至吸頭18的表面18a的時刻t12變成零。而且，如圖20E、圖20D所示，在時刻t12，開口壓力、吸附壓力分別成為接近大氣的第2壓力P2、第4壓力P4。在此狀態下，如圖18所示，儘管與柱狀移動元件45的前端面47對應的區域的半導體晶粒15貼附至切割片材12，但半導體晶粒15的大部分區域成為自切割片材12剝離的狀態(第二次的第3剝離步驟)。如此，控制部150結束第3剝離程式160。 The control unit 150 in FIG. 20E, FIG. 20D, at time t 11 the output of the following instructions is the opening pressure close to the suction pressure, respectively, from a first pressure P 1 vacuum, the third pressure P 3 are switched to close The second pressure P 2 of the atmospheric pressure and the fourth pressure P 4 . According to this command, the drive unit 92 of the adsorption pressure switching mechanism 90 and the drive unit 82 of the opening pressure switching mechanism 80 respectively switch the three-way valve 81 and the three-way valve 91 so that the groove 26 and the opening 23 are respectively connected to the pipe 85 which is open to the atmosphere. The piping 95 is connected. Then, as indicated by an arrow 241 and an arrow 242 in Fig. 18, air flows into the opening 23 and the groove 26, and the opening pressure and the suction pressure rise. Therefore, the cut sheet 12 is displaced upward as indicated by an arrow 243 shown in Fig. 18. . By displacement of the suction head suction hole cut sheet 12 upward direction 18 of the vacuum, the semiconductor die 15 near the tip 19 of the surface 18a is 18, and therefore FIG. 20F, at time t 11 to time T 12 period, to reduce air flowing into the leakage of suction holes 19, finally, the semiconductor grains 15 is vacuum adsorbed to the surface of tip 18a 18 a time t 12 becomes zero. Further, FIG. 20E, FIG. 2OD, at time t 12, the opening pressure, the adsorption becomes close to atmospheric pressure respectively, the second pressure P 2, the fourth pressure P 4. In this state, as shown in FIG. 18, although the semiconductor die 15 of the region corresponding to the front end face 47 of the columnar moving member 45 is attached to the dicing sheet 12, most of the region of the semiconductor die 15 becomes self-cutting. The state in which the sheet 12 is peeled off (the second third peeling step). In this manner, the control unit 150 ends the third stripping program 160.

如以上所說明的，控制部150如時刻t5至時刻t6般，將開口壓力、吸附壓力分別自接近真空的第1壓力P1、第3壓力P3切換為接近大氣壓的第2壓力P2、第4壓力P4，並且將周邊環狀移動元件31的前端面38a自第1位置移動至第2位置，如時刻t8至時刻t9般，將開口壓力、吸附壓力分別自接近真空的第1壓力P1、第3壓力P3切換為接近大氣壓的第2壓力P2、第4壓力P4，並且，每當將開口壓力、吸附壓力自接近真空的第1壓力P1、第3壓力P3切換為接近大氣壓的第2壓力P2、第4壓力P4，以將中 間環狀移動元件40的前端面38b自第1位置移動至第2位置時，自外側的環狀移動元件朝向內側的環狀移動元件依序使前端面自第1位置移動至第2位置，以此方式來重複第3剝離步驟，從而自半導體晶粒15的周圍朝向內側來階段性地剝離切割片材12。 As described above, the control unit 150 switches the opening pressure and the adsorption pressure from the first pressure P 1 and the third pressure P 3 close to the vacuum to the second pressure P close to the atmospheric pressure, respectively, from time t 5 to time t 6 . 2 , the fourth pressure P 4 , and the front end surface 38a of the peripheral annular moving element 31 is moved from the first position to the second position, and the opening pressure and the adsorption pressure are respectively close to the vacuum as in the time t 8 to the time t 9 . The first pressure P 1 and the third pressure P 3 are switched to the second pressure P 2 and the fourth pressure P 4 which are close to the atmospheric pressure, and the opening pressure and the adsorption pressure are from the first pressure P 1 which is close to the vacuum, and the first pressure. When the pressure P 3 is switched to the second pressure P 2 and the fourth pressure P 4 close to the atmospheric pressure, when the distal end surface 38b of the intermediate annular moving element 40 is moved from the first position to the second position, the annular movement from the outer side is performed. The annular moving element in which the element faces inwardly moves the front end surface from the first position to the second position in this order, and repeats the third peeling step in this manner, thereby peeling off the cutting piece stepwise from the periphery of the semiconductor die 15 toward the inside. Material 12.

在結束第3剝離程式後，控制部150在時刻t12，使滑塊51的位置移動至圖4A所示的最右側為止，以使安裝於滑塊51的半圓柱構件52嵌入至各移動元件的鉤部37a、鉤部37b、鉤部37f。藉由該滑塊51的移動，中間環狀移動元件40藉由半圓柱構件52的頂點52a來支持水平支持面36b，因此其前端面38b如圖19的箭頭246所示，自第2位置下降至第3位置。另外，如圖19所示，柱狀移動元件45無直線凸輪面，位於滑塊51的移動方向上的水平支持面36f與在滑塊51位於初始位置時所接觸的水平支持面39f為同一面，因此前端面47的位置不會因滑塊51的移動而發生變化，仍處於初始位置即第1位置。當滑塊51的半圓柱構件52嵌入各鉤部37a、鉤部37b、鉤部37f時，各移動元件31、移動元件40、移動元件45在上下方向上受到固定。而且，控制部150在時刻t12輸出將吸附壓力切換為接近真空的第3壓力P3的指令。根據該指令，吸附壓力切換機構90的驅動部92切換三通閥91，以使槽26與真空裝置140連通。藉此，如圖19的箭頭245所示，槽26的空氣被抽吸至真空裝置140，槽26成為真空，切割片材12被真空吸附至吸附面22。在圖19所示的狀態下，儘管與柱狀移動元件45的前端面47對應的區域的半導體晶粒15貼附於切割片材 12，但半導體晶粒15的大部分區域成為自切割片材12剝離的狀態。 3 after the release of the program, the control unit 150 at time t 12, the position of the slider 51 is moved up to the rightmost side in FIG. 4A, so that the semi-cylindrical member 52 is attached to the slider 51 is fitted to each of the mobile element The hook portion 37a, the hook portion 37b, and the hook portion 37f. By the movement of the slider 51, the intermediate annular moving element 40 supports the horizontal support surface 36b by the apex 52a of the semi-cylindrical member 52, so that the front end surface 38b descends from the second position as indicated by an arrow 246 in Fig. 19 To the third position. Further, as shown in Fig. 19, the columnar moving member 45 has no linear cam surface, and the horizontal supporting surface 36f located in the moving direction of the slider 51 is flush with the horizontal supporting surface 39f which is in contact with the slider 51 when it is in the initial position. Therefore, the position of the front end surface 47 does not change due to the movement of the slider 51, and is still at the initial position, that is, the first position. When the semi-cylindrical member 52 of the slider 51 is fitted into each of the hook portion 37a, the hook portion 37b, and the hook portion 37f, each of the moving member 31, the moving member 40, and the moving member 45 is fixed in the vertical direction. Further, the control unit 150 at time t 12 the output is switched to the adsorption pressure near vacuum in the third pressure P 3 of the instruction. According to this instruction, the drive unit 92 of the adsorption pressure switching mechanism 90 switches the three-way valve 91 to connect the groove 26 with the vacuum device 140. Thereby, as shown by an arrow 245 in FIG. 19, the air of the groove 26 is sucked to the vacuum device 140, the groove 26 becomes a vacuum, and the cut sheet 12 is vacuum-adsorbed to the adsorption surface 22. In the state shown in FIG. 19, although the semiconductor die 15 of the region corresponding to the front end face 47 of the columnar moving member 45 is attached to the dicing sheet 12, most of the region of the semiconductor die 15 becomes a self-cut sheet. 12 peeling state.

控制部150在圖20A的時刻t13輸出使吸頭18上升的指令。根據該指令，圖1所示的吸頭驅動部130驅動馬達，如圖19的箭頭247所示般使吸頭18上升。各移動元件31、移動元件40、移動元件45在上下方向上受到固定，切割片材12被真空吸附至吸附面22，因此當吸頭18上升時，與柱狀移動元件45的前端面47對應的區域的半導體晶粒15自切割片材12剝離，半導體晶粒15在由吸頭18吸附的狀態下被拾取。 The control unit outputs a command 150 t 13 the suction head 18 rises at the time of FIG. 20A. According to this command, the tip driving unit 130 shown in Fig. 1 drives the motor to raise the tip 18 as indicated by an arrow 247 in Fig. 19 . Each of the moving element 31, the moving element 40, and the moving element 45 is fixed in the up-and-down direction, and the cut sheet 12 is vacuum-adsorbed to the adsorption surface 22, so that when the tip 18 is raised, it corresponds to the front end surface 47 of the columnar moving element 45. The semiconductor crystal grains 15 of the regions are peeled off from the cut sheet 12, and the semiconductor crystal grains 15 are picked up in a state of being adsorbed by the suction heads 18.

在拾取半導體晶粒15後，控制部150在時刻t14使滑塊51返回初始位置時，各移動元件31、移動元件40、移動元件45的各前端面38a、前端面38b、前端面47返回第1位置。而且，控制部150使吸附壓力、開口壓力恢復為大氣壓而結束拾取動作。 After picking up a semiconductor die 15, the control unit 150 at time t 14 when the slider 51 returns to the initial position, each movable member 31, moving member 40, moving the front end surface 45 of each element 38a, the front end face 38b, the front end face 47 returns The first position. Further, the control unit 150 returns the suction pressure and the opening pressure to the atmospheric pressure to end the pickup operation.

以上說明的實施形態的半導體晶粒的拾取裝置500在拾取半導體晶粒15時，每當將開口壓力、吸附壓力自接近真空的第1壓力P1、第3壓力P3切換為接近大氣壓的第2壓力P2、第4壓力P4時，自外側的環狀移動元件朝向內側的環狀移動元件，依序使前端面自第1位置移動至第2位置，以此方式來重複第3剝離步驟，從而自半導體晶粒15的周圍朝向內側來階段性地剝離切割片材12，因此起到可抑制拾取時的半導體晶粒的損傷的效果。 In the semiconductor wafer pick-up device 500 of the embodiment described above, when the semiconductor die 15 is picked up, the opening pressure and the adsorption pressure are switched from the first pressure P 1 and the third pressure P 3 close to the vacuum to the near atmospheric pressure. When the pressure P 2 and the fourth pressure P 4 are two, the endless surface is moved from the first position to the second position from the outer annular moving element toward the inner annular moving element, and the third peeling is repeated in this manner. In the step, the cut sheet 12 is peeled off stepwise from the periphery of the semiconductor die 15 toward the inside, and thus the effect of suppressing damage of the semiconductor crystal grains at the time of pick-up can be suppressed.

另外，所述實施形態中，設為下述情況進行了說明，即，每當將開口壓力、吸附壓力自接近真空的第1壓力P1、第3壓力 P3切換為接近大氣壓的第2壓力P2、第4壓力P4時，將1個環狀移動元件的前端面自第1位置移動至第2位置，但亦可使切換壓力時的滑塊51的滑動距離加長，以使多個環狀移動元件的前端面自第1位置移動至第2位置。而且，本實施形態中，設為下述情況進行了說明，即，柱狀移動元件45不具備直線凸輪面，且前端面47不自第1位置移動，但亦可構成為，柱狀移動元件45具備直線凸輪面，在內周側的環狀移動構件的前端面自第1位置移動至第2位置後，前端面47自第1位置移動至第2位置。而且，本實施形態中，設第2位置為比吸附面22低(H1-H0)的位置而進行了說明，但第2位置只要低於第1位置，則亦可與吸附面22為同一面，還可為高於吸附面的位置。 In the above-described embodiment, the first pressure P 1 and the third pressure P 3 close to the vacuum are switched to the second pressure close to the atmospheric pressure each time the opening pressure and the adsorption pressure are changed. When P 2 and the fourth pressure P 4 are used, the front end surface of one annular moving element is moved from the first position to the second position. However, the sliding distance of the slider 51 at the time of switching pressure may be lengthened to increase the number of times. The front end surface of the annular moving element moves from the first position to the second position. Further, in the present embodiment, the columnar moving element 45 is not provided with a linear cam surface, and the distal end surface 47 is not moved from the first position, but may be configured as a columnar moving element. 45 includes a linear cam surface, and the distal end surface 47 moves from the first position to the second position after the distal end surface of the annular moving member on the inner circumferential side moves from the first position to the second position. Further, in this embodiment, it is assumed the second position lower than the suction surface 22 (H 1 -H 0) of the position has been described, but as long as the second position below the first position, and the suction surface 22 is also On the same side, it can also be higher than the adsorption surface.

而且，在本實施形態的動作的說明中，設為下述情況進行了說明，即，移動元件30包含周邊環狀移動元件31、中間環狀移動元件40、柱狀移動元件45這三個移動元件，且將第3剝離步驟進行兩次，但在階差面形成機構移動元件30包含圖3A、圖3B、圖4A、圖4B所示的周邊環狀移動元件31、四個中間環狀移動元件40至中間環狀移動元件43以及柱狀移動元件45的情況下，將周邊環狀移動元件31與四個中間環狀移動元件40至中間環狀移動元件43這五個的各前端面38a~前端面38e分別自第1位置移動至第2位置，因此將第3剝離步驟進行五次。另外，中間環狀移動元件的數量並不限於所述例子，亦可為兩個或三個，還可為五個以上。中間環狀移動元件的數量越多，則自半導體晶粒15的 周圍朝向內側以越多的階段而逐漸地剝離切割片材12，因此可進一步抑制拾取時的半導體晶粒的損傷。 Further, in the description of the operation of the present embodiment, the moving element 30 includes three movements of the peripheral annular moving element 31, the intermediate annular moving element 40, and the columnar moving element 45. The third peeling step is performed twice, but the step surface forming mechanism moving member 30 includes the peripheral annular moving member 31 shown in FIGS. 3A, 3B, 4A, and 4B, and four intermediate annular movements. In the case of the element 40 to the intermediate annular moving element 43 and the columnar moving element 45, the front end faces 38a of the five peripheral annular moving elements 31 and the four intermediate annular moving elements 40 to the intermediate annular moving elements 43 are provided. Since the front end surface 38e is moved from the first position to the second position, the third peeling step is performed five times. Further, the number of the intermediate annular moving elements is not limited to the above example, and may be two or three, and may be five or more. The greater the number of intermediate annular moving elements, the self-semiconductor die 15 The cutting sheet 12 is gradually peeled off toward the inner side at a plurality of stages, so that damage of the semiconductor crystal grains at the time of picking up can be further suppressed.

而且，本實施形態中，設為下述情況進行了說明，即，移動元件30包含圖3A、圖3B、圖4A、圖4B所示的周邊環狀移動元件31、四個中間環狀移動元件40至中間環狀移動元件43以及柱狀移動元件45，各前端面38a~前端面38e、前端面47為平坦的面，但各前端面亦可並非平坦的面，而設為例如設有多個槽的面。 Further, in the present embodiment, the moving element 30 includes the peripheral annular moving element 31 and the four intermediate annular moving elements shown in FIGS. 3A, 3B, 4A, and 4B. 40 to the intermediate annular moving element 43 and the columnar moving element 45, the front end surface 38a to the front end surface 38e and the front end surface 47 are flat surfaces, but the front end surfaces may not be flat surfaces, but may be provided, for example, The face of the slot.

例如，如圖24所示，亦可構成為，移動元件30包含周邊環狀移動元件31、兩個中間環狀移動元件40、中間環狀移動元件41以及柱狀移動元件45，在周邊環狀移動元件31的前端面38a的表面設置多個槽31a，在柱狀移動元件45的前端面47上呈格子狀地配置多個槽45a。藉由以此方式構成，如圖10、圖11所示，當在各移動元件30的各前端面38a、前端面38b、前端面47接觸至切割片材12的背面12b的狀態下將開口23設為接近真空的壓力時，起到下述效果，即，可進一步促進半導體晶粒15周邊的切割片材12的剝離，並且可促進半導體晶粒15中心附近的切割片材12的剝離，從而可縮短自切割片材12拾取半導體晶粒15的時間。 For example, as shown in FIG. 24, the moving element 30 may be configured to include a peripheral annular moving element 31, two intermediate annular moving elements 40, an intermediate annular moving element 41, and a columnar moving element 45. A plurality of grooves 31a are provided on the surface of the front end surface 38a of the moving element 31, and a plurality of grooves 45a are arranged in a lattice shape on the front end surface 47 of the columnar moving element 45. According to this configuration, as shown in FIGS. 10 and 11, the opening 23 is formed in a state where the front end surface 38a, the front end surface 38b, and the front end surface 47 of each of the moving elements 30 are in contact with the back surface 12b of the cut sheet 12. When the pressure is close to the vacuum, the peeling of the cut sheet 12 around the semiconductor die 15 can be further promoted, and the peeling of the cut sheet 12 near the center of the semiconductor die 15 can be promoted, thereby The time during which the self-cut sheet 12 picks up the semiconductor die 15 can be shortened.

控制部150在先前說明的第3剝離步驟中，執行第3剝離判斷步驟，該第3剝離判斷步驟判斷與前端面38a相向的半導體晶粒15的區域是否自切割片材12的表面12a發生了剝離，在 第3剝離判斷步驟中，當判斷為與前端面38a相向的半導體晶粒15的區域未自切割片材12的表面12a發生剝離時，實施第3重試步驟。以下，對第3剝離判斷步驟與第3重試步驟進行說明。 In the third peeling step described above, the control unit 150 executes a third peeling determination step of determining whether or not the region of the semiconductor crystal grain 15 facing the distal end surface 38a has occurred from the surface 12a of the cut sheet 12. Stripping In the third peeling determination step, when it is determined that the region of the semiconductor crystal grain 15 facing the distal end surface 38a is not peeled off from the surface 12a of the cut sheet 12, the third retry step is performed. Hereinafter, the third peeling determination step and the third retry step will be described.

首先，參照圖14來進行說明，如圖20F所示，當在時刻t7開口壓力自接近大氣壓力的第2壓力P2朝向接近真空的第1壓力P1開始下降時，半導體晶粒15發生彎曲變形而離開吸頭18的表面18a，空氣流入至抽吸孔19，因此由圖1所示的流量感測器106所檢測的空氣洩漏量增加。並且，當如圖20E、圖20D所示，當在時刻t8開始使開口壓力與吸附面壓力自接近真空的第1壓力P1、第3壓力P3上升至接近大氣壓的第2壓力P2、第4壓力P4時，由圖1所示的流量感測器106檢測的空氣洩漏量開始下降，如圖15所示，當在時刻t9半導體晶粒15被吸附至吸頭18的表面18a時，空氣洩漏量變成零，與周邊環狀移動元件31的前端面38a相向的區域的半導體晶粒15自切割片材12的背面12a剝離。另一方面，在半導體晶粒15未自切割片材12的表面12a順利剝離的情況下，即便使開口壓力與吸附面壓力自接近真空的第1壓力P1、第3壓力P3上升至接近大氣壓的第2壓力P2、第4壓力P4，半導體晶粒15仍貼附於切割片材12，而不會被真空吸附至吸頭18的表面，因此空氣洩漏量即使到達時刻t9亦不會變成零。 First, FIG 14 will be explained with reference to FIG. 20F, when at time t 7 from the opening pressure close to atmospheric pressure, the second pressure P 2 toward the first near-vacuum pressure begins to drop 1 P 1, the semiconductor die 15 occurs The air is deformed to leave the surface 18a of the suction head 18, and the air flows into the suction hole 19, so that the amount of air leakage detected by the flow sensor 106 shown in Fig. 1 is increased. Further, when FIG. 20E, FIG. 2OD, when the time t 8 the opening pressure close to the suction surface pressure from the first pressure P 1 of a vacuum, the third pressure P 3 rises to approximately the second pressure P 2 atm , a fourth pressure P 4, the amount of air leakage 106 detected by the flow sensor shown in FIG. 1 starts to decrease, as shown in Figure 15, at time t 9 when the semiconductor die 15 is adsorbed to the surface 18 of the tip At 18a, the air leakage amount becomes zero, and the semiconductor crystal grain 15 in the region facing the front end surface 38a of the peripheral annular moving element 31 is peeled off from the back surface 12a of the cut sheet 12. On the other hand, when the semiconductor die 15 is not smoothly peeled off from the surface 12a of the cut sheet 12, the opening pressure and the suction surface pressure are raised from the first pressure P 1 and the third pressure P 3 close to the vacuum to be close to each other. At the second pressure P 2 and the fourth pressure P 4 of the atmospheric pressure, the semiconductor crystal grains 15 are still attached to the cut sheet 12 without being vacuum-adsorbed to the surface of the suction head 18, so that the air leakage amount even reaches the time t 9 Will not become zero.

如此，在半導體晶粒15自切割片材12剝離的情況下，如圖21A所示，空氣洩漏量自零開始上升後，下降至零為止，在半導體晶粒15未自切割片材12順利剝離的情況下，如圖21C所 示，空氣洩漏量自零開始上升後，保持某流量而不下降至零。該空氣洩漏量為類比(analog)量，因此為了準確地進行剝離檢測，在第3剝離判斷步驟中，對圖21A、圖21C所示的空氣洩漏量的信號進行微分而計算圖21B、圖21D所示的空氣洩漏量微分值。 As described above, in the case where the semiconductor die 15 is peeled off from the cut sheet 12, as shown in FIG. 21A, the air leakage amount rises from zero and then falls to zero, and the semiconductor die 15 is not peeled off from the cut sheet 12 smoothly. In the case, as shown in Figure 21C It is shown that after the air leakage increases from zero, a certain flow rate is maintained without falling to zero. Since the air leakage amount is an analog amount, in order to accurately perform the peeling detection, in the third peeling determination step, the signal of the air leakage amount shown in FIGS. 21A and 21C is differentiated to calculate FIGS. 21B and 21D. The differential value of the air leakage shown.

如圖21B所示，若半導體晶粒15順利剝離，則空氣洩漏量自零開始上升後，下降至零為止，因此空氣洩漏量的微分值暫時變成正值之後，變成負值。另一方面，如圖21D所示，若半導體晶粒15未順利剝離，則空氣洩漏量自零開始上升後，仍保持該值，因此空氣洩漏量的微分值暫時變成正值後，變為零附近。因此，若如21B、圖21D所示般將空氣洩漏量的微分值的臨限值範圍設定在+S與-S之間，則如圖21B般，當半導體晶粒15順利剝離時，空氣洩漏量的微分值超過臨限值範圍兩次(朝正方向一次，朝負方向一次，合計兩次)。另一方面，在半導體晶粒15未順利剝離的情況下，如圖21D所示，空氣洩漏量的微分值僅朝正側超過臨限值一次。因此，在第3剝離判斷步驟中，若圖20F的時刻t7至時刻t9之間的空氣洩漏量的微分值超過規定臨限值範圍的次數為2(偶數)，則半導體晶粒15判斷為已剝離而前進至下個剝離步驟，若空氣洩漏量的微分值超過規定臨限值範圍的次數為1(奇數)，則判斷為半導體晶粒15未剝離，在前進至接下來要說明的第3重試步驟之前，將次數設為0(將計數器(counter)清零(clear))。 As shown in FIG. 21B, when the semiconductor crystal grain 15 is smoothly peeled off, the air leakage amount rises from zero and then falls to zero. Therefore, the differential value of the air leakage amount temporarily becomes a positive value and becomes a negative value. On the other hand, as shown in FIG. 21D, if the semiconductor die 15 is not smoothly peeled off, the amount of air leakage increases from zero, and the value is maintained. Therefore, the differential value of the air leakage amount temporarily becomes a positive value and becomes zero. nearby. Therefore, if the threshold value of the differential value of the air leakage amount is set between +S and -S as shown in FIG. 21B and FIG. 21D, as shown in FIG. 21B, when the semiconductor die 15 is smoothly peeled off, the air leaks. The differential value of the quantity exceeds the threshold range twice (onward in the positive direction and once in the negative direction, totaling twice). On the other hand, in the case where the semiconductor crystal grain 15 is not smoothly peeled off, as shown in FIG. 21D, the differential value of the air leakage amount only exceeds the threshold value toward the positive side once. Thus, in the third release determination step, if the time t. 7 to FIG. 20F, the differential value of the time t of the amount of air leakage between the threshold frequency and 9 exceeds the predetermined range is 2 (even), the semiconductor die 15 is determined When the number of times the differential value of the air leakage amount exceeds the predetermined threshold range is 1 (odd number), it is determined that the semiconductor die 15 is not peeled off, and the process proceeds to the next step. Before the third retry step, set the number of times to 0 (clear the counter).

而且，在圖21B的空氣洩漏量的微分值為負的區域中， 當空氣洩漏量的微分值達到-S時(圖21A、圖21B的時刻t1)，如圖21A所示，實際的吸頭空氣洩漏量脫離最大洩漏量而開始減少。因而，圖21A、圖21B的時刻t1之後，可預測半導體晶粒15趨向正立(半導體晶粒15朝向吸頭18的表面18a)，因此臨限值-S亦可稱為剝離趨向收聚的轉換點。因而，在空氣洩漏量的微分值達到臨限值-S的時點亦可移行至下個剝離製程(process)，可實現剝離時間的縮短及對半導體晶粒15的損傷(damage)降低。 Further, the amount of air leakage differential FIG 21B is negative region, when the amount of air leakage differential value reaches -S (FIG. 21A, FIG. 21B time t 1), shown in Figure 21A, the actual suction The amount of head air leakage begins to decrease from the maximum amount of leakage. Therefore, after time t 1 of FIGS. 21A and 21B, it is predicted that the semiconductor crystal grain 15 tends to be erect (the semiconductor crystal grain 15 faces the surface 18a of the tip 18), so the threshold -S may also be referred to as a peeling tendency gathering. Conversion point. Therefore, when the differential value of the air leakage amount reaches the threshold value -S, the process can be shifted to the next peeling process, and the peeling time can be shortened and the damage to the semiconductor die 15 can be reduced.

控制部150如圖22E、圖22D所示，不使周邊環狀移動元件31移動，而在時刻t9使吸附壓力自接近大氣壓的第4壓力P4下降至接近真空的第3壓力P3，在時刻t21使開口壓力自接近大氣壓的第2壓力P2下降至接近真空的第1壓力P1。然後，在時刻t22如圖22D、圖22E所示，使吸附壓力、開口壓力分別自接近真空的第3壓力P3、第1壓力P1上升至接近大氣壓的第4壓力P4、第2壓力P2(第3重試步驟)。藉由第3重試步驟，若在圖22F的時刻t22至時刻t23的期間內空氣洩漏量下降而變成零，則此時的空氣洩漏量的微分值超過規定臨限值範圍一次(超過負側的臨限值範圍)。藉此，圖22F所示的時刻t7至時刻t23的期間的空氣洩漏量的微分值超過規定臨限值範圍的次數為2(偶數)，因此控制部150判斷為與周邊環狀移動元件31的前端面38a相向的區域的半導體晶粒15自切割片材12的表面12a發生了剝離而結束第3重試步驟，在前進至下個第3剝離步驟之前將次數設為0(將計數器清零)。 As shown in FIGS. 22E and 22D, the control unit 150 lowers the adsorption pressure from the fourth pressure P 4 close to the atmospheric pressure to the third pressure P 3 close to the vacuum at time t 9 without moving the peripheral annular moving element 31. at time t 21 from the proximity of the opening pressure of the second pressure P 2 is lowered to near atmospheric pressure in a first vacuum 1 P 1. Then, at time t 22 in FIG. 22D, FIG. 22E, the suction pressure, respectively, from the opening of the pressure near the vacuum pressure of the third P 3, a first pressure P 1 is raised to near atmospheric pressure to a fourth pressure P 4, the second Pressure P 2 (3rd retry step). According to the third retry step, if the amount of air leakage decreases to zero during the period from time t 22 to time t 23 in FIG. 22F, the differential value of the air leakage amount at this time exceeds the predetermined threshold range once (more than The threshold of the negative side)). As a result, the number of times the differential value of the air leakage amount in the period from time t 7 to time t 23 shown in FIG. 22F exceeds the predetermined threshold range is 2 (even), and therefore the control unit 150 determines that it is adjacent to the peripheral annular moving element. The semiconductor crystal grain 15 in the region where the front end surface 38a of the 31 faces the surface is peeled off from the surface 12a of the cut sheet 12, and the third retry step is completed, and the number of times is set to 0 before proceeding to the next third peeling step (the counter is used) Cleared).

另外，控制部150在多次進行第3剝離步驟的情況下，亦可對空氣洩漏量的微分值超過規定臨限值範圍的次數進行累計計數，若該計數值為偶數則前進至下個第3剝離步驟，若計數值為奇數則前進至第3重試步驟。例如，若在第一次的第3剝離步驟中，半導體晶粒15的規定部分的剝離已完成，則微分值的計數為2(偶數)，因此前進至第二次的第3剝離步驟。若在第二次的第3剝離步驟中，半導體晶粒15的規定部分的剝離未完成，而空氣洩漏量的微分值超過規定臨限值範圍的次數為1次，則累計計數值為3(奇數)，因此不前進至第三次的第3剝離步驟，而前進至第3重試步驟。若在第3重試步驟中，半導體晶粒15的規定部分的剝離已完成，則空氣洩漏量的微分值超過規定臨限值範圍的次數將被計數1次，因此累計計數值為4(偶數)，因此前進至第三次的第3剝離步驟。如此，根據累計計數值變為偶數或變為奇數來判斷是否前進至下個第3剝離步驟，藉此，僅憑計數值便可判斷在第幾次的第3剝離步驟中半導體晶粒的剝離未完成。 Further, when the third peeling step is performed a plurality of times, the control unit 150 may cumulatively count the number of times the differential value of the air leakage amount exceeds the predetermined threshold range, and if the count value is an even number, proceed to the next 3 The stripping step proceeds to the third retry step if the count value is an odd number. For example, when the peeling of the predetermined portion of the semiconductor crystal grain 15 is completed in the first third peeling step, the count of the differential value is 2 (even number), so that the second peeling step is advanced. In the second third peeling step, if the peeling of the predetermined portion of the semiconductor crystal grain 15 is not completed, and the number of times the differential value of the air leakage amount exceeds the predetermined threshold value is one time, the cumulative count value is 3 ( Since it is an odd number, it does not advance to the third third peeling step, and proceeds to the third retry step. If the peeling of the predetermined portion of the semiconductor die 15 is completed in the third retry step, the number of times the differential value of the air leakage amount exceeds the prescribed threshold range will be counted once, so the cumulative count value is 4 (even number) Therefore, proceed to the third third peeling step. As described above, it is determined whether or not the process proceeds to the next third peeling step based on whether the cumulative count value is even or odd, whereby the peeling of the semiconductor crystal grains in the third peeling step can be determined only by the count value. undone.

本實施形態的半導體晶粒的拾取裝置500如上所述，在確認半導體晶粒15是否自切割片材12剝離後前進至下個剝離步驟，因此可抑制在剝離動作時導致半導體晶粒15受到損傷的情況。 As described above, the semiconductor wafer pick-up device 500 of the present embodiment advances to the next peeling step after confirming whether or not the semiconductor crystal grain 15 is peeled off from the cut sheet 12, thereby suppressing damage of the semiconductor crystal grain 15 during the peeling operation. Case.

接下來，參照圖23A~圖23F來說明第2剝離步驟(第2剝離程式159)、第2剝離確認步驟、第2重試步驟。對於與先前參照圖1至圖22A~圖22F所說明的第3剝離步驟(第3剝離程式160)、第3剝離確認步驟、第3重試步驟同樣的動作，標註 同樣的符號並省略說明。 Next, the second peeling step (second peeling program 159), the second peeling confirming step, and the second retrying step will be described with reference to FIGS. 23A to 23F. The same operation as the third peeling step (third stripping program 160), the third peeling confirming step, and the third retrying step described above with reference to FIGS. 1 to 22A to 22F is performed. The same symbols are used and the description is omitted.

如圖23A~圖23F所示，第2剝離步驟(第2剝離程式159)、第2剝離確認步驟、第2重試步驟是在時刻t2至時刻t3的期間將吸附壓力設為接近真空的第3壓力P3後，並將吸附壓力保持為第3壓力P3的狀態下，與第3剝離步驟(第3剝離程式160)、第3剝離確認步驟、第3重試步驟同樣地，使開口壓力、周邊環狀移動元件31的位置、中間環狀移動元件40的位置、吸頭18的位置發生變化，因此除了將吸附壓力保持為第3壓力P3以外，與第3剝離步驟、第3剝離確認步驟、第3重試步驟同樣。第2剝離步驟(第2剝離程式159)、第2剝離確認步驟、第2重試步驟起到與第3剝離步驟(第3剝離程式160)、第3剝離確認步驟、第3重試步驟同樣的效果。 As shown in FIG. 23A ~ 23F, the second release step (the second release program 159), the second release confirmation step, the second step is a retry time t 2 to time t 3 during the adsorption pressure is set close to a vacuum After the third pressure P 3 and maintaining the adsorption pressure at the third pressure P 3 , similarly to the third peeling step (third stripping program 160 ), the third stripping confirmation step, and the third retry step, The opening pressure, the position of the peripheral annular moving element 31, the position of the intermediate annular moving element 40, and the position of the tip 18 are changed. Therefore, in addition to the adsorption pressure being maintained at the third pressure P 3 , the third peeling step, The third peeling confirmation step and the third retrying step are the same. The second peeling step (second peeling program 159), the second peeling confirming step, and the second retrying step are the same as the third peeling step (third stripping program 160), the third peeling confirming step, and the third retrying step. Effect.

接下來，參照圖25至圖38A~圖38G來說明使移動元件630由五個板狀移動元件631~板狀移動元件635構成的實施形態。首先，對於與先前參照圖1至圖20A~圖20F所說明的實施形態同樣的構件，標註同樣的符號並省略說明。 Next, an embodiment in which the moving element 630 is constituted by five plate-shaped moving elements 631 to slab-shaped moving elements 635 will be described with reference to FIGS. 25 to 38A to 38G. First, members that are the same as those of the embodiment described with reference to FIGS. 1 to 20A to 20F will be denoted by the same reference numerals and will not be described.

如圖25所示，移動元件630是將五個第1板狀移動元件631~第5板狀移動元件635沿圖4A、圖4B所示的滑塊51的移動方向重疊配置，且以各前端面631a~前端面635a自平台20的吸附面22突出了高度H0的方式而配置。與先前所說明的實施形態同樣，各板狀移動元件631~板狀移動元件635具備傾斜面，該傾斜面接觸至滑塊51，藉由滑塊51的移動來使各板狀移動元件 631~板狀移動元件635在第1位置與第2位置之間移動。各傾斜面是以下述方式而在滑塊51的移動方向上偏離地配置，即，各板狀移動元件631~板狀移動元件635沿著滑塊51的移動方向而自第1位置依序移動至第2位置。當滑塊51藉由階差面形成機構300而移動時，移動元件631~移動元件635以各前端面631a~前端面635a距吸附面的高度成為H0→H1→H2的方式移動。 As shown in FIG. 25, in the moving element 630, the five first plate-shaped moving elements 631 to 535-shaped moving elements 635 are arranged to overlap each other in the moving direction of the slider 51 shown in FIGS. 4A and 4B, and the front ends are arranged. The surface 631a to the front end surface 635a are arranged so as to protrude from the adsorption surface 22 of the stage 20 by the height H 0 . Similarly to the embodiment described above, each of the plate-shaped moving elements 631 to 342-shaped moving elements 635 includes an inclined surface that contacts the slider 51, and each of the plate-shaped moving elements 631 is moved by the movement of the slider 51. The plate-shaped moving element 635 moves between the first position and the second position. Each of the inclined surfaces is disposed to be displaced in the moving direction of the slider 51 in such a manner that each of the plate-shaped moving elements 631 to 342-shaped moving elements 635 are sequentially moved from the first position along the moving direction of the slider 51. To the second position. When the slider 51 is moved by the step surface forming mechanism 300, the moving element 631 to the moving element 635 move so that the heights of the front end surfaces 631a to 635a from the adsorption surface become H 0 → H 1 → H 2 .

與先前所說明的實施形態同樣，控制部150最先執行圖1所示的對位程式157。在初始狀態下，各板狀移動元件631~板狀移動元件635的各前端面631a~前端面635a處於自平台20的吸附面22突出了高度H0的第1位置，因此控制部150使平台20上升而使各移動元件631~移動元件635的各前端面631a~前端面635a密接至切割片材12的背面12b。然後，控制部150再次藉由晶圓固持器水平方向驅動部110來調整水平位置，以使欲拾取的半導體晶粒15來到自平台20的吸附面22稍許突出的移動元件630的各前端面631a~前端面635a(階差面)的正上方。 The control unit 150 first executes the alignment program 157 shown in Fig. 1 in the same manner as the embodiment described above. In the initial state, each of the front end faces 631a to 635a of each of the plate-shaped moving elements 631 to slab-shaped moving elements 635 protrudes from the suction surface 22 of the stage 20 by the first position of the height H 0 , so the control unit 150 makes the platform The rising of 20 causes the front end faces 631a to 635a of the respective moving members 631 to 635 to be in close contact with the back face 12b of the cut sheet 12. Then, the control unit 150 adjusts the horizontal position by the wafer holder horizontal direction driving unit 110 again, so that the semiconductor die 15 to be picked up comes to the front end faces of the moving elements 630 slightly protruding from the adsorption surface 22 of the stage 20. 631a~ directly above the front end surface 635a (step surface).

如圖26所示，半導體晶粒15的大小比平台20的開口23小且比移動元件630的寬度或者縱深大，因此當平台20的位置調整結束時，半導體晶粒15的外周端處於平台20的開口23的內表面23a與第1板狀移動元件631的外表面631b之間、或內表面23a與第5板狀移動元件635的外表面635b之間、即開口23的內表面23a與第1板狀移動元件631、第5板狀移動元件635的各外表面631b、外表面635b之間的間隙d的正上方。在初始狀態下， 平台20的槽26或者吸附面22的壓力為大氣壓，開口23的壓力亦為大氣壓。初始狀態下，各板狀移動元件631~板狀移動元件635的各前端面631a~前端面635a處於自平台20的吸附面22突出了高度H0的第1位置，因此與各前端面631a~前端面635a接觸的切割片材12的背面12b的高度亦處於自吸附面22突出了高度H0的第1位置。而且，在開口23的周緣，切割片材12的背面12b自吸附面22稍許浮起，而在離開開口23的區域，成為密接於吸附面22的狀態。當水平方向的位置調整結束後，控制部150藉由圖1所示的吸頭驅動部130來使吸頭18下降至半導體晶粒15之上，以使吸頭18的表面18a著落於半導體晶粒15上。當吸頭18著落於半導體晶粒15上之後，控制部150藉由抽吸機構100的驅動部102來將三通閥101切換為使吸頭18的抽吸孔19與真空裝置140連通的方向。藉此，抽吸孔19成為真空，吸頭18將半導體晶粒15吸附固定至表面18a(對位程式結束)。此時，吸頭18的表面18a的高度如圖26所示，成為將各板狀移動元件631~板狀移動元件635的各前端面631a~前端面635a的高度(自吸附面22算起的高度H0)加上切割片材12的厚度與半導體晶粒15的厚度所得的高度Hc。 As shown in FIG. 26, the size of the semiconductor die 15 is smaller than the opening 23 of the stage 20 and larger than the width or depth of the moving member 630, so that when the position adjustment of the stage 20 is completed, the outer peripheral end of the semiconductor die 15 is at the stage 20 Between the inner surface 23a of the opening 23 and the outer surface 631b of the first plate-shaped moving element 631, or between the inner surface 23a and the outer surface 635b of the fifth plate-shaped moving element 635, that is, the inner surface 23a of the opening 23 The plate-shaped moving element 631 and the outer surface 631b of the fifth plate-shaped moving element 635 and the outer surface 635b are directly above the gap d. In the initial state, the pressure of the groove 26 or the adsorption surface 22 of the stage 20 is atmospheric pressure, and the pressure of the opening 23 is also atmospheric pressure. In the initial state, each of the front end faces 631a to 635a of each of the plate-shaped moving elements 631 to slab-shaped moving elements 635 protrudes from the suction surface 22 of the stage 20 by the first position of the height H 0 , and thus the front end faces 631a are the height of the cut sheet 635a is contacting the back surface 12b of the front end face 12 also from the suction surface 22 in the protruding height H 0 of the first position. Further, at the periphery of the opening 23, the back surface 12b of the cut sheet 12 slightly floats from the adsorption surface 22, and is in a state of being in close contact with the adsorption surface 22 in a region away from the opening 23. After the position adjustment in the horizontal direction is completed, the control unit 150 lowers the tip 18 onto the semiconductor die 15 by the tip driving unit 130 shown in FIG. 1 so that the surface 18a of the tip 18 is landed on the semiconductor crystal. On the grain 15. After the tip 18 is landed on the semiconductor die 15, the control portion 150 switches the three-way valve 101 to the direction in which the suction hole 19 of the tip 18 communicates with the vacuum device 140 by the driving portion 102 of the suction mechanism 100. . Thereby, the suction hole 19 becomes a vacuum, and the suction head 18 adsorbs and fixes the semiconductor crystal grain 15 to the surface 18a (the alignment program ends). In this case, as shown in FIG. 26, the height of the front end surface 631a to the front end surface 635a of each of the plate-shaped moving element 631 to the plate-shaped moving element 635 is calculated from the adsorption surface 22 as shown in FIG. The height H 0 ) plus the height H c of the thickness of the dicing sheet 12 and the thickness of the semiconductor crystal grain 15 is obtained.

接下來，控制部150執行圖1所示的第1剝離程式158。控制部150在圖38E所示的時刻t1輸出將吸附壓力自接近大氣壓的第4壓力P4切換為接近真空的第3壓力P3的指令。根據該指令，如圖38E所示，在時刻t2，吸附壓力成為接近真空的第3壓力P3。 並且，開口23周緣的切割片材12的背面12b如圖27的箭頭202所示，被真空吸附至吸附面22的表面。各板狀移動元件631~板狀移動元件635的各前端面631a~前端面635a處於自平台20的吸附面22突出了高度H0的第1位置，因此對切割片材12施加朝斜下的拉伸力F1。因該拉伸力F1，在半導體晶粒15的外周部分或周邊部分與切割片材12的表面12a之間發生偏離。該偏離成為切割片材12與半導體晶粒15的外周部分或周邊部分的剝離的契機。 Next, the control unit 150 executes the first peeling program 158 shown in Fig. 1 . The control unit 150 outputs a command to switch the adsorption pressure from the fourth pressure P 4 close to atmospheric pressure to the third pressure P 3 close to the vacuum at time t 1 shown in FIG. 38E. According to this instruction, as shown in FIG. 38E, at time t 2, the vacuum suction pressure becomes close to a third pressure P 3. Further, the back surface 12b of the cut sheet 12 at the periphery of the opening 23 is vacuum-adsorbed to the surface of the adsorption surface 22 as indicated by an arrow 202 in FIG. Each of the front end faces 631a to 635a of each of the plate-shaped moving elements 631 to slab-shaped moving elements 635 is at the first position where the height H 0 is projected from the suction surface 22 of the stage 20, so that the cut sheet 12 is applied obliquely downward. Tensile force F 1 . Due to the tensile force F 1 , a deviation occurs between the outer peripheral portion or the peripheral portion of the semiconductor die 15 and the surface 12a of the cut sheet 12. This deviation becomes a trigger for peeling of the cut sheet 12 and the outer peripheral portion or the peripheral portion of the semiconductor die 15.

控制部150如圖38E所示，在時刻t2吸附壓力成為接近真空的第3壓力P3後，保持規定的時間，並如圖38F所示，在時刻t3輸出將開口壓力自接近大氣壓的第2壓力P2切換為接近真空的第1壓力P1的指令。根據該指令，如圖28的箭頭206所示，開口23的空氣被抽吸至真空裝置140，如圖38F所示，在時刻t4，開口壓力成為接近真空的第1壓力P1。藉此，如圖28的箭頭203所示，位於開口23的內表面23a與第1板狀移動元件631的外表面631b的間隙d以及與第5板狀移動元件635的外表面635b的間隙d正上方的切割片材12朝下側受到拉伸。而且，位於各間隙d正上方的半導體晶粒15的周邊部被切割片材12拉伸，從而如箭頭204所示般朝下彎曲變形。藉此，半導體晶粒15的周邊部離開吸頭18的表面18a。在時刻t2，當吸附壓力成為接近真空的第3壓力P3時，由於在半導體晶粒15的外周部分與切割片材12的表面12a之間發生的偏離，在半導體晶粒15的周邊部形成自切割片材12的表面12a剝離的契機，因此半導體晶粒15的周邊部如圖 28的箭頭204所示一邊發生彎曲變形，一邊自切割片材12的表面12a開始剝離。 The control unit 150 shown in FIG. 38E, at time t 2 becomes the suction pressure of the third pressure P 3 near vacuum, holding a predetermined period of time, and as illustrated, the output at the time t 3 of the opening pressure close to atmospheric pressure from 38F The second pressure P 2 is switched to a command close to the first pressure P 1 of the vacuum. According to this instruction, as shown by arrow 206 in FIG. 28, the air is sucked into the opening 23 of the vacuum means 140, as shown in FIG. 38F, at time t 4, the opening pressure reaches a first pressure close to a vacuum P 1. Thereby, as shown by an arrow 203 of FIG. 28, the gap d between the inner surface 23a of the opening 23 and the outer surface 631b of the first plate-shaped moving element 631 and the gap d with the outer surface 635b of the fifth plate-shaped moving element 635 The cut sheet 12 directly above is stretched toward the lower side. Moreover, the peripheral portion of the semiconductor die 15 located directly above each gap d is stretched by the cut sheet 12 to be bent downward as shown by the arrow 204. Thereby, the peripheral portion of the semiconductor die 15 is separated from the surface 18a of the tip 18. At the time t 2 , when the adsorption pressure becomes the third pressure P 3 close to the vacuum, the deviation occurs between the outer peripheral portion of the semiconductor die 15 and the surface 12a of the dicing sheet 12 at the peripheral portion of the semiconductor die 15. Since the surface 12a of the cut sheet 12 is peeled off, the peripheral portion of the semiconductor die 15 is bent and deformed as shown by an arrow 204 in Fig. 28, and peeling starts from the surface 12a of the cut sheet 12.

如圖28所示，當半導體晶粒15的周邊部離開吸頭18的表面18a時，如圖28的箭頭205所示，空氣流入成為真空的吸頭18的抽吸孔19中。流入的空氣流量(空氣洩漏量)由流量感測器106予以檢測。如圖38F所示，自時刻t3朝向時刻t4，隨著開口壓力自接近大氣壓的第2壓力P2下降至接近真空的第1壓力P1，半導體晶粒15與切割片材12一同朝下方向受到拉伸而彎曲變形，因此如圖38G所示，流入吸頭18的抽吸孔19內的空氣洩漏量自時刻t3朝向時刻t4而增加。 As shown in Fig. 28, when the peripheral portion of the semiconductor die 15 is separated from the surface 18a of the tip 18, as indicated by an arrow 205 in Fig. 28, air flows into the suction hole 19 of the suction head 18 which becomes a vacuum. The inflowing air flow rate (air leakage amount) is detected by the flow sensor 106. As shown in FIG. 38F, toward the time from time t 3 t 4, as close to the opening of the pressure from the second pressure P 2 decreases to near atmospheric pressure in a first vacuum 1 P 1, the semiconductor die 15 and the dicing sheet 12 together toward under the direction of bending deformation by stretching, so as shown in FIG. 38G, the leakage amount of the air flowing into the suction head 19 from the suction hole 18 toward the time t 3 and time t 4 increases.

控制部150如圖38F、圖38E所示，在時刻t4至時刻t5的期間，將平台20的開口23與槽26或吸附面22分別保持為接近真空的第1壓力P1、第3壓力P3。在此期間，如圖29的箭頭207所示，半導體晶粒15的周邊部藉由吸頭18的抽吸孔19的真空與半導體晶粒15的彈性而返回至吸頭18的表面18a。隨著半導體晶粒15的周邊部朝向吸頭18的表面18a，如圖38G的時刻t4至時刻t5所示，流入吸頭18的抽吸孔19內的空氣洩漏量減少，在時刻t5，如圖29所示，當半導體晶粒15被真空吸附至吸頭18的表面18a時，空氣洩漏量為零。此時，半導體晶粒15的周邊部自位於各間隙d正上方的切割片材12的表面12a剝離(初始剝離步驟)。在半導體晶粒15的周邊部自切割片材12的表面12a初始剝離時，位於開口23的各間隙d正上方的切割片材12朝下方向 位移。控制部150藉由片材位移檢測感測器107來檢測切割片材12的朝向下方向的位移(相對於吸附面22的接離方向的位移)，當檢測出的位移超過規定的臨限值時，判斷為半導體晶粒15的周邊部自位於各間隙d正上方的切割片材12的表面12a發生了初始剝離。而且，當檢測出的位移為規定的臨限值以下時，判斷為半導體晶粒15的周邊部未自位於各間隙d正上方的切割片材12的表面12a發生初始剝離(第1剝離判斷步驟)。控制部150在判斷為半導體晶粒15的周邊部發生了初始剝離時，前進至下個剝離步驟。而且，控制部150在判斷為半導體晶粒15的周邊部未發生初始剝離時，執行與先前所說明的實施形態同樣的第1重試步驟，當所檢測出的位移超過規定的位移時，結束第1重試步驟，並前進至下個剝離步驟(第1剝離程式結束)。 As shown in FIGS. 38F and 38E, the control unit 150 holds the opening 23 of the stage 20, the groove 26, and the adsorption surface 22 at a first pressure P 1 and a third near the vacuum, respectively, from the time t 4 to the time t 5 . Pressure P 3 . During this period, as shown by an arrow 207 of FIG. 29, the peripheral portion of the semiconductor die 15 is returned to the surface 18a of the tip 18 by the vacuum of the suction hole 19 of the tip 18 and the elasticity of the semiconductor die 15. With the peripheral portion of the semiconductor die 15 toward the surface of the suction head 18 18a, t 4 of FIG. 38G time to time t 5 as shown, to reduce the amount of air leakage in the suction holes 19 flows into the suction head 18 at time t 5 , as shown in Fig. 29, when the semiconductor die 15 is vacuum-adsorbed to the surface 18a of the tip 18, the amount of air leakage is zero. At this time, the peripheral portion of the semiconductor die 15 is peeled off from the surface 12a of the dicing sheet 12 located directly above each gap d (initial peeling step). When the peripheral portion of the semiconductor die 15 is initially peeled off from the surface 12a of the cut sheet 12, the cut sheet 12 located directly above each gap d of the opening 23 is displaced downward. The control unit 150 detects the displacement of the cut sheet 12 in the downward direction (displacement with respect to the direction of separation of the adsorption surface 22) by the sheet displacement detecting sensor 107, and when the detected displacement exceeds a prescribed threshold At this time, it is determined that the peripheral portion of the semiconductor crystal grain 15 is initially peeled off from the surface 12a of the dicing sheet 12 located directly above the respective gaps d. When the detected displacement is equal to or less than a predetermined threshold value, it is determined that the peripheral portion of the semiconductor crystal grain 15 is not initially peeled off from the surface 12a of the dicing sheet 12 located directly above each gap d (first peeling determination step) ). When the control unit 150 determines that the peripheral portion of the semiconductor die 15 has been initially peeled off, the control unit 150 proceeds to the next peeling step. Further, when the control unit 150 determines that the initial peeling of the peripheral portion of the semiconductor die 15 is not performed, the control unit 150 executes the first retry step similar to that of the embodiment described above, and ends when the detected displacement exceeds the predetermined displacement. The first retry step proceeds to the next stripping step (the first stripping program ends).

接下來，控制部150執行圖1所示的第3剝離程式160。控制部150如圖38F、圖38E所示，將開口壓力與吸附壓力分別保持為接近真空的第1壓力P1、第3壓力P3規定時間後，在時刻t5輸出將開口壓力、吸附壓力分別自接近真空的第1壓力P1、第3壓力P3切換為接近大氣壓的第2壓力P2、第4壓力P4的指令。根據該指令，如圖30所示的箭頭210、箭頭211般，空氣流入至開口23、槽26，因此如圖38E、圖38G所示，自時刻t5朝向時刻t6，開口壓力與吸附壓力自接近真空的第1壓力P1、第3壓力P3上升至接近大氣壓的第2壓力P2、第4壓力P4。 Next, the control unit 150 executes the third peeling program 160 shown in Fig. 1 . The control unit 150 in FIG. 38F, FIG. 38E, the opening pressure and suction pressure are maintained at near vacuum pressure of 1 P 1, the third pressure P 3 for a predetermined time after the time t 5 the output of the opening pressure, the adsorption pressure The first pressure P 1 and the third pressure P 3 which are close to the vacuum are respectively switched to the command of the second pressure P 2 and the fourth pressure P 4 which are close to the atmospheric pressure. According to this command, as shown by the arrow 210 and the arrow 211 shown in FIG. 30, the air flows into the opening 23 and the groove 26, so that the opening pressure and the adsorption pressure are from the time t 5 toward the time t 6 as shown in FIGS. 38E and 38G. The first pressure P 1 and the third pressure P 3 from the approaching vacuum rise to the second pressure P 2 and the fourth pressure P 4 which are close to the atmospheric pressure.

當開口壓力、吸附壓力上升至接近大氣壓的第2壓力 P2、第4壓力P4時，因真空而朝下方向被拉伸的位於間隙d正上方的切割片材12如圖30的箭頭212所示，因在固定於晶圓固持器10時施加的拉伸力而朝上方向返回。而且，開口23周緣的切割片材12因所述拉伸力而成為自吸附面22稍許浮起的狀態。 When the opening pressure and the adsorption pressure rise to the second pressure P 2 and the fourth pressure P 4 which are close to the atmospheric pressure, the cut sheet 12 which is stretched downward in the downward direction by the vacuum is located at an arrow 212 of FIG. As shown, it returns upward in the upward direction due to the tensile force applied when it is fixed to the wafer holder 10. Further, the cut sheet 12 at the periphery of the opening 23 is slightly raised from the adsorption surface 22 due to the tensile force.

控制部150如圖38F、圖38E所示，在時刻t6開口壓力、吸附壓力成為接近大氣壓的第2壓力P2、第4壓力P4後，如圖38D所示，輸出下述指令，該指令是將第1板狀移動元件631的前端面631a的高度設為自第1位置(自吸附面22算起的高度為H0的初始位置)低了高度H1的第2位置。根據該指令，圖1所示的驅動部25的馬達77如圖1所示的箭頭a般沿逆時針方向旋轉。藉此，連桿構件60如圖1所示的箭頭c般沿順時針方向旋轉，滑塊51如圖1所示的箭頭A般朝右開始移動。 The control unit 150 in FIG. 38F, FIG. 38E, the opening of the pressure at time t 6, the suction pressure becomes close to the atmospheric second pressure P 2, the fourth pressure P 4, and outputs the following instructions shown in FIG. 38D, the instruction is a highly mobile element 631 of the first plate-like front end face 631a is set from the first position (height from the suction surface 22 is H counting position 0) of the lower height H 1 of the second position. According to this command, the motor 77 of the drive unit 25 shown in Fig. 1 rotates in the counterclockwise direction as indicated by an arrow a shown in Fig. 1 . Thereby, the link member 60 rotates in the clockwise direction like the arrow c shown in FIG. 1, and the slider 51 starts moving toward the right like the arrow A shown in FIG.

與先前所說明的實施形態同樣，如圖4B所示，當滑塊51自基準位置朝右移動距離L1時，第1板狀移動元件631較當初的第1位置朝下側移動高度H1，如圖31的箭頭214所示，第1板狀移動元件631的前端面631a亦移動至自第1位置(初始位置)朝下側算起為高度H1且比吸附面22稍低的第2位置(自吸附面22低了高度(H1-H0)的位置)。如圖31所示，第2板狀移動元件632~第5板狀移動元件635的各前端面632a~前端面635a的高度仍處於第1位置(初始位置)。第1板狀移動元件631的前端面631a與前端面632a~前端面635a是彼此存在階差的階差面。而且，第2板狀移動元件632~第5板狀移動元件635的各前端面 632a~前端面635a分別成為相對於吸附面22的階差面。當滑塊51自基準位置朝右移動距離L1後，控制部150停止馬達77的旋轉。 Embodiment same as those described previously, as shown, when the slider 51 from the reference position of the distance L 1 is moved rightward, the movement of the first plate member 631 moved downward to the original position than the first height H 1 in FIG. 4B the first, as shown by arrow 31, moving the first plate member 631 is also moved to the front end face 631a from the first position (initial position), counting down the side of the height H 1 and 22 slightly lower than the suction surface 214 2 position (the position at which the height (H 1 -H 0 ) is lowered from the adsorption surface 22). As shown in FIG. 31, the heights of the distal end faces 632a to 635a of the second plate-shaped moving element 632 to the fifth plate-shaped moving element 635 are still at the first position (initial position). The front end surface 631a and the front end surface 632a to the front end surface 635a of the first plate-shaped moving element 631 are step surfaces having a step difference from each other. Further, each of the distal end faces 632a to 635a of the second plate-shaped moving element 632 to the fifth plate-shaped moving element 635 is a step surface with respect to the adsorption surface 22, respectively. When the slider 51 is moved to the right by the distance L 1 from the reference position, the control unit 150 stops the rotation of the motor 77.

接下來，控制部150在時刻t6輸出將吸附壓力自接近大氣壓的第4壓力P4切換為接近真空的第3壓力P3的指令。根據該指令，吸附壓力切換機構90的驅動部92切換三通閥91，以使槽26與真空裝置140連通。藉此，如圖31的箭頭213所示，槽26的空氣朝向真空裝置140受到抽吸，槽26的壓力以及吸附面22的吸附壓力成為接近真空的第3壓力P3，切割片材12被真空吸附至吸附面22。此時，如圖38F所示，開口23的壓力成為接近大氣壓的第2壓力P2，因此在位於各間隙d正上方的切割片材12的背面12b與第1板狀移動元件631的前端面631a之間空出有間隙。 Next, the control unit 150 at time t 6 the output from the suction pressure close to the atmospheric pressure P 4 3 4 switched to the near-vacuum pressure P 3 of the instruction. According to this instruction, the drive unit 92 of the adsorption pressure switching mechanism 90 switches the three-way valve 91 to connect the groove 26 with the vacuum device 140. Thereby, as shown by an arrow 213 in Fig. 31, the air of the groove 26 is sucked toward the vacuum device 140, the pressure of the groove 26 and the adsorption pressure of the adsorption surface 22 become the third pressure P 3 close to the vacuum, and the cut sheet 12 is The vacuum is adsorbed to the adsorption face 22. At this time, as shown in FIG. 38F, since the pressure of the opening 23 becomes the second pressure P 2 close to the atmospheric pressure, the front surface 12b of the cut sheet 12 located directly above the gap d and the front end surface of the first plate-shaped moving element 631 are provided. There is a gap between 631a.

控制部150如圖38F所示，在時刻t7輸出將開口壓力自接近大氣壓的第2壓力P2切換為接近真空的第1壓力P1的指令。根據該指令，如圖32的箭頭215所示，開口23中的空氣被抽吸至真空裝置140，在時刻t8，如圖38F所示，開口壓力成為接近真空的第1壓力P1。當開口壓力自接近大氣壓的第2壓力下降至接近真空的第1壓力P1時，位於第1板狀移動元件631的前端面631a正上方(相向)的切割片材12如圖32的箭頭216所示，朝下側受到拉伸，以使背面12b接觸至前端面631a。藉此，如圖32的箭頭217所示，半導體晶粒15中的位於前端面631a正上方的半導體晶粒15的一部分朝下方向彎曲變形而離開吸頭18的表面18a， 空氣流入至吸頭18的抽吸孔19中。而且，當開口壓力自接近大氣壓的第2壓力下降至接近真空的第1壓力P1時，與參照圖28所說明的同樣，位於開口23的內表面23a與第5板狀移動元件635的外表面635b的間隙d正上方的切割片材12朝下側受到拉伸而如箭頭204所示般朝下彎曲變形，半導體晶粒15的第5板狀移動元件側的周邊部離開吸頭18的表面18a。於是，如圖32的箭頭205所示，空氣流入至成為真空的吸頭18的抽吸孔19中。流入至抽吸孔19內的空氣洩漏量是由圖1所示的流量感測器106予以檢測。空氣洩漏量如圖38G所示，在開口壓力下降的時刻t7至時刻t8的期間內增加。 The control unit 150 shown in FIG. 38F, at time t 7 the output pressure P 1 of the first command the opening near-vacuum pressure from the second pressure near the atmospheric pressure P 2 is switched. According to this instruction, as indicated by arrow 21,532, the opening 23 air is sucked into the vacuum apparatus 140, at time t 8, FIG. 38F, the opening pressure reaches a first pressure close to a vacuum P 1. When the opening of the pressure from the second pressure near the atmospheric pressure decreases to near-vacuum pressure of 1 P 1, the movement of the plate-like member located on a front end surface 631a of the positive 631 upward (opposed) sheet 12 cut by arrow 216 in FIG. 32 As shown, the lower side is stretched so that the back surface 12b comes into contact with the front end surface 631a. Thereby, as shown by an arrow 217 in FIG. 32, a part of the semiconductor crystal grain 15 in the semiconductor crystal grain 15 directly above the front end surface 631a is bent and deformed downward to leave the surface 18a of the suction head 18, and the air flows into the suction head. In the suction hole 19 of 18. Also, when the close opening of the pressure from the second pressure drop to near atmospheric pressure in a first vacuum 1 P 1, the same with reference to FIG. 28 described, the opening 23 of the outer surface of the inner 23a and the fifth plate-like moving member 635 The cut sheet 12 directly above the gap d of the surface 635b is stretched downward toward the lower side and is bent downward as indicated by an arrow 204, and the peripheral portion of the fifth plate-shaped moving member side of the semiconductor die 15 is separated from the tip 18 Surface 18a. Then, as indicated by an arrow 205 in Fig. 32, air flows into the suction hole 19 of the suction head 18 which becomes a vacuum. The amount of air leakage into the suction hole 19 is detected by the flow sensor 106 shown in Fig. 1. As shown in FIG. 38G, the amount of air leakage increases during the period from time t 7 to time t 8 when the opening pressure drops.

控制部150在到達時刻t8時，如圖38F、圖38E所示，使開口壓力、吸附壓力分別自接近真空的第1壓力P1、第3壓力P3上升至接近大氣壓的第2壓力P2、第4壓力P4。藉此，如圖33中的箭頭220、箭頭221所示，空氣流入開口23、槽26內，如圖38F、圖38E所示，開口23的壓力、槽26的壓力或吸附面22的壓力分別上升至接近大氣壓的第2壓力P2、第4壓力P4。藉此，如圖33的箭頭223所示，第1板狀移動元件631的外表面631b與開口23的內表面23a之間的間隙d正上方的切割片材12離開第1板狀移動元件631的前端面631a而朝上方向位移。與前端面631a相向的區域的半導體晶粒15伴隨著切割片材12朝向上方向的位移，而如圖33所示的箭頭224般朝向吸頭18的表面18a返回。而且，如圖33所示，第5板狀移動元件635的外表面635b 與開口23的內表面23a之間的間隙d正上方的切割片材12亦如箭頭223所示般朝上方向位移，第5板狀移動元件側的半導體晶粒15的周邊部亦如圖33所示的箭頭224般朝向吸頭18的表面18a而返回。當半導體晶粒15接近吸頭18的表面18a時，如圖38G的時刻t8至時刻t9的期間般，流入至吸頭18的抽吸孔19內的空氣洩漏量開始下降，在圖38G的時刻t9，空氣洩漏量為零。此時，半導體晶粒15被真空吸附至吸頭18的表面18a，與前端面631a相向的半導體晶粒15的區域自切割片材12的表面12a剝離(第一次的第3剝離步驟)。 The control unit 150 reaches the time t 8, FIG. 38F, as shown in FIG. 38E, the opening pressure, respectively suction pressure close to a vacuum pressure from the first 1 P 1, the third pressure P 3 up to close to the atmospheric pressure P 2 2 , the fourth pressure P 4 . Thereby, as shown by an arrow 220 and an arrow 221 in Fig. 33, air flows into the opening 23 and the groove 26, as shown in Figs. 38F and 38E, the pressure of the opening 23, the pressure of the groove 26, or the pressure of the adsorption surface 22, respectively. The second pressure P 2 and the fourth pressure P 4 are raised to near atmospheric pressure. Thereby, as shown by an arrow 223 in FIG. 33, the cut sheet 12 directly above the gap d between the outer surface 631b of the first plate-shaped moving element 631 and the inner surface 23a of the opening 23 is separated from the first plate-shaped moving member 631. The front end surface 631a is displaced upward. The semiconductor crystal grain 15 in the region facing the front end surface 631a is accompanied by the displacement of the cut sheet 12 in the upward direction, and is returned toward the surface 18a of the tip 18 as indicated by an arrow 224 shown in FIG. Further, as shown in FIG. 33, the cut sheet 12 directly above the gap d between the outer surface 635b of the fifth plate-shaped moving member 635 and the inner surface 23a of the opening 23 is also displaced upward as indicated by an arrow 223. The peripheral portion of the semiconductor die 15 on the fifth plate-shaped moving element side also returns toward the surface 18a of the tip 18 as indicated by an arrow 224 shown in FIG. When the semiconductor grains 15 near the surface 18a of the tip 18, the time t of FIG. 38G. 8 to 9 during the time t like, flows into the air leakage amount in the suction hole 19 of the suction head 18 starts to decrease, 38G in FIG. At time t 9 , the amount of air leakage is zero. At this time, the semiconductor crystal grain 15 is vacuum-adsorbed to the surface 18a of the tip 18, and the region of the semiconductor crystal grain 15 facing the front end surface 631a is peeled off from the surface 12a of the cut sheet 12 (the first third peeling step).

在時刻t9，控制部150輸出下述指令，該指令是將第2板狀移動元件632的前端面632a移動至自第1位置(自吸附面22算起的高度為H0的位置)低了高度H1的第2位置。根據該指令，滑塊51朝右方向移動至自基準位置算起的距離為L2的位置為止(朝右方向移動距離(L2-L1))，如圖34的箭頭227所示，第2板狀移動元件632的前端面632a移動至自第1位置(自吸附面高了高度H0的位置)低了高度H1的第2位置(自吸附面22低了H1-H0的位置)。而且，如圖34的箭頭226所示，位於第2位置的第1板狀移動元件631的前端面631a移動至自第1位置(初始位置)低了高度H2的第3位置(自吸附面22低了H2-H0的位置)。第1板狀移動元件631的前端面631a、第2板狀移動元件632的前端面632a、第3板狀移動元件~第5板狀移動元件635的各前端面633a~前端面635a為彼此存在階差的階差面，同時為相對於 吸附面22的階差面。 At time t 9, the control unit 150 outputs the following instruction, which is the front end face of the second plate 632 of the moving member 632a to move from the first position (22, counting from the suction surface height position H is 0) Low The second position of height H 1 . According to this command, the slider 51 moves in the right direction until the distance from the reference position is L 2 (the distance (L 2 - L 1 ) is moved in the right direction), as indicated by an arrow 227 in FIG. 34. moving the plate-like member 2 of the front end face 632a 632 to move from the first position (height from the high suction surface position H 0) of the lower height H 1 of the second position (from the lower suction face 22 H 0 -H 1 position). Further, as shown by arrow 226 in FIG. 34, at the second position of the first plate member 631 moves the front end face 631a to move from the first position (initial position) of the third lower height H at position 2 (from the suction surface 22 is lower than the position of H 2 -H 0 ). The front end surface 631a of the first plate-shaped moving element 631, the front end surface 632a of the second plate-shaped moving element 632, and the front end surface 633a to the front end surface 635a of the third plate-shaped moving element to the fifth plate-shaped moving element 635 are mutually present. The step surface of the step is also the step surface relative to the adsorption surface 22.

而且，控制部150如圖38E所示，在時刻t9輸出將吸附壓力自接近大氣壓的第4壓力P4切換為接近真空的第3壓力P3的指令，並如圖38F所示，在自時刻t9經過規定時間後的時刻t10，輸出將開口壓力自接近大氣壓的第2壓力P2切換為接近真空的第1壓力P1的指令。藉此，如圖35的箭頭225、箭頭228所示，槽26的空氣與開口23的空氣被抽吸至真空裝置140，開口壓力、吸附壓力在時刻t11分別成為接近真空的第1壓力P1、第3壓力P3。於是，如圖35所示的箭頭229、箭頭230般，切割片材12朝向下降至第3位置的第1板狀移動元件631的前端面631a、下降至第2位置的第2板狀移動元件632的前端面632a受到拉伸，並朝下方向位移。伴隨於此，與前端面631a、前端面632a相向的半導體晶粒15的區域亦如圖35的箭頭231所示，離開吸頭18的表面18a而朝下彎曲變形。於是，如圖35的箭頭232所示，空氣自吸頭18的表面18a與半導體晶粒15之間流入至抽吸孔19。而且，與參照圖32所說明的同樣，當開口壓力自接近大氣壓的第2壓力下降至接近真空的第1壓力P1時，位於開口23的內表面23a與第5板狀移動元件635的外表面635b的間隙d正上方的切割片材12朝下側受到拉伸而如箭頭204所示般朝下彎曲變形，半導體晶粒15的第5板狀移動元件側的周邊部離開吸頭18的表面18a。於是，如圖35的箭頭205所示，空氣流入至成為真空的吸頭18的抽吸孔19中。藉此，如圖38G所示，在時刻t10至時刻t11的期間內，流 入至吸頭18的抽吸孔19內的空氣洩漏量增加。 Further, a control unit 150 shown in FIG. 38E, at time t 9 the output pressure from near atmospheric pressure to a fourth pressure P 4 is switched to the third pressure command P 3 near vacuum adsorption, and FIG. 38F, the self second pressure time t 9 after the lapse of a predetermined time t 10, the output from the opening of the pressure close to atmospheric pressure P 2 is switched to the first command a near vacuum of P. Accordingly, the arrow 225 in FIG. 35, an arrow 228, the air channel 26 and the opening 23 air is drawn into the vacuum apparatus 140, the opening pressure, suction pressure, respectively, at time t 11 becomes close to a vacuum pressure of 1 P 1. The third pressure P 3 . Then, as shown by an arrow 229 and an arrow 230 shown in FIG. 35, the cut sheet 12 faces the front end surface 631a of the first plate-shaped moving element 631 which is lowered to the third position, and the second plate-shaped moving element which is lowered to the second position. The front end face 632a of the 632 is stretched and displaced downward. As a result, the region of the semiconductor crystal grain 15 facing the front end surface 631a and the front end surface 632a is also bent downward and deformed as shown by an arrow 231 in Fig. 35, away from the surface 18a of the tip 18. Then, as indicated by an arrow 232 in Fig. 35, air flows from the surface 18a of the tip 18 and the semiconductor die 15 to the suction hole 19. Further, the same procedure as described with reference to FIG. 32, when the opening of the pressure from the second pressure near the atmospheric pressure decreases to near-vacuum pressure of 1 P 1, the inner surface 23 of the opening 23a of the fifth plate-like moving member 635 of the outer The cut sheet 12 directly above the gap d of the surface 635b is stretched downward toward the lower side and is bent downward as indicated by an arrow 204, and the peripheral portion of the fifth plate-shaped moving member side of the semiconductor die 15 is separated from the tip 18 Surface 18a. Then, as indicated by an arrow 205 in Fig. 35, air flows into the suction hole 19 of the suction head 18 which becomes a vacuum. Accordingly, as shown in FIG. 38G, during the time t 10 to time t 11, and flows into the tip leakage of air suction holes 19 within 18 increases.

控制部150如圖38F、圖38E所示，在時刻t11輸出下述指令，該指令是將開口壓力、吸附壓力自分別接近真空的第1壓力P1、第3壓力P3切換為分別接近大氣壓的第2壓力P2、第4壓力P4。根據該指令，如圖36的箭頭241、箭頭242所示，空氣流入至開口23、槽26，開口壓力、吸附壓力上升，因此切割片材12如圖36所示的箭頭243所示，朝上方向位移。藉由切割片材12朝上方向的位移與吸頭18的抽吸孔19的真空，半導體晶粒15如箭頭244般靠近吸頭18的表面18a。而且，如圖36所示，第5板狀移動元件635的外表面635b與開口23的內表面23a之間的間隙d正上方的切割片材12亦如箭頭243所示般朝上方向位移，第5板狀移動元件側的半導體晶粒15的周邊部亦如圖36所示的箭頭244般靠近吸頭18的表面18a。藉此，如圖38G所示，在時刻t11至時刻t12的期間，流入至抽吸孔19內的空氣洩漏量減少，最終在半導體晶粒15被真空吸附至吸頭18的表面18a的時刻t12成為零。而且，如圖38F、圖38E所示，在時刻t12，開口壓力、吸附壓力分別成為接近大氣的第2壓力P2、第4壓力P4。在此狀態下，如圖36所示，儘管與第3板狀移動元件633~第5板狀移動元件635的前端面633a~前端面635a對應的區域的半導體晶粒15貼附至切割片材12，但與第1板狀移動元件631、第2板狀移動元件632的各前端面631a、前端面632a對應的區域及與各間隙d對應的區域、以及第5板狀移動元件側的半導體晶粒15周邊部分的 區域成為自切割片材12剝離的狀態(第二次的第3剝離步驟)。如此，控制部150結束第3剝離程式160。 The control unit 150 in FIG. 38F, FIG. 38E, at time t 11 the output of the following instructions is the opening pressure, the suction pressure from the first pressure close to a vacuum, respectively, 1 P 1, the third pressure P 3 are switched to close The second pressure P 2 of the atmospheric pressure and the fourth pressure P 4 . According to this instruction, as indicated by an arrow 241 and an arrow 242 in Fig. 36, air flows into the opening 23 and the groove 26, and the opening pressure and the suction pressure rise. Therefore, the cut sheet 12 is upward as indicated by an arrow 243 shown in Fig. 36. Directional displacement. By cutting the upward direction of the sheet 12 and the vacuum of the suction holes 19 of the tip 18, the semiconductor die 15 is as close as the arrow 244 to the surface 18a of the tip 18. Further, as shown in FIG. 36, the cut sheet 12 directly above the gap d between the outer surface 635b of the fifth plate-shaped moving member 635 and the inner surface 23a of the opening 23 is also displaced upward as indicated by an arrow 243. The peripheral portion of the semiconductor die 15 on the fifth plate-shaped moving element side is also close to the surface 18a of the tip 18 as indicated by an arrow 244 shown in FIG. Accordingly, as shown in FIG 38G, at time t. 11 to time t 12, to reduce air leakage flows in the suction hole 19, in the final semiconductor die 15 is vacuum adsorbed to the surface of the tip of the 18a 18 Time t 12 becomes zero. Further, FIG. 38F, as shown in FIG. 38E, at time t 12, the opening pressure, the adsorption becomes close to atmospheric pressure respectively, the second pressure P 2, the fourth pressure P 4. In this state, as shown in FIG. 36, the semiconductor die 15 in the region corresponding to the front end surface 633a to the front end surface 635a of the third plate-shaped moving element 633 to the fifth plate-shaped moving element 635 is attached to the cut sheet. 12, a region corresponding to each of the front end surface 631a and the distal end surface 632a of the first plate-shaped moving element 631, the second plate-shaped moving element 632, a region corresponding to each gap d, and a semiconductor on the fifth plate-shaped moving element side. The region of the peripheral portion of the crystal grain 15 is in a state of being peeled off from the cut sheet 12 (second third peeling step). In this manner, the control unit 150 ends the third stripping program 160.

在結束第3剝離程式後，控制部150在時刻t12，輸出將第3板狀移動元件633的前端面633a移動至自第1位置(自吸附面22算起的高度為H0的位置)低了高度H1的第2位置的指令。根據該指令，滑塊51朝右方向移動至自基準位置算起的距離為L3的位置為止(朝右方向移動距離(L3-L2))，如圖37的箭頭247所示，第3板狀移動元件633的前端面633a移動至自第1位置(自吸附面高了高度H0的位置)低了高度H1的第2位置(自吸附面22低了H1-H0的位置)。而且，如圖37的箭頭246所示，位於第2位置的第2板狀移動元件632的前端面632a移動至自第1位置(初始位置)低了高度H2的第3位置(自吸附面22低了H2-H0的位置)。而且，第1板狀移動元件631的前端面631a停止於第3位置。藉此，第1板狀移動元件631的前端面631a、第2板狀移動元件632的前端面632a、第3板狀移動元件633的前端面633a、第4板狀移動元件634及第5板狀移動元件635的各前端面634a、前端面635a為彼此具有階差的階差面，同時成為相對於吸附面22的階差面。 After the third peeling program is completed, the control unit 150 outputs the front end surface 633a of the third plate-shaped moving element 633 to the first position (the position at which the height from the adsorption surface 22 is H 0 ) is output at time t 12 . The command of the second position of height H 1 is lowered. According to this command, the slider 51 moves in the right direction until the distance from the reference position is L 3 (the distance (L 3 - L 2 ) is moved in the right direction), as indicated by an arrow 247 in FIG. 37. The front end surface 633a of the plate-like moving element 633 moves to a second position lower than the height H 1 from the first position (the position at which the height H 0 is raised from the adsorption surface) (the H 1 -H 0 is lower than the adsorption surface 22) position). Further, an arrow 246 shown in FIG. 37, at the second position of the second plate 632 of the front end face of the movable member 632a to move from the first position (initial position) of the third lower height H at position 2 (from the suction surface 22 is lower than the position of H 2 -H 0 ). Further, the distal end surface 631a of the first plate-shaped moving element 631 is stopped at the third position. Thereby, the distal end surface 631a of the first plate-shaped moving element 631, the distal end surface 632a of the second plate-shaped moving element 632, the distal end surface 633a of the third plate-shaped moving element 633, the fourth plate-shaped moving element 634, and the fifth plate Each of the front end surface 634a and the front end surface 635a of the movable element 635 is a step surface having a step difference from each other, and serves as a step surface with respect to the adsorption surface 22.

而且，控制部150在時刻t12輸出將吸附壓力切換為接近真空的第3壓力P3的指令。根據該指令，如圖37的箭頭245所示，槽26的空氣被抽吸至真空裝置140，槽26成為真空，切割片材12被真空吸附至吸附面22。在直至先前所說明的第二次的第 三剝離步驟為止的步驟中，半導體晶粒15的相當大的部分自切割片材12發生了剝離，因此半導體晶粒15與切割片材12的黏著力大幅下降。因此，當將第3板狀移動元件633的前端面633a移動至第2位置時，在半導體晶粒15被吸附至吸頭18的狀態下，與前端面633a對應的區域的切割片材12因將槽26設為真空而產生的斜下方向的拉伸力F6而如圖37的箭頭278所示般離開半導體晶粒15。因此，在圖37所示的狀態下，儘管與第4板狀移動元件634、第5板狀移動元件635的各前端面634a、前端面635a對應的區域的半導體晶粒15貼附至切割片材12，但半導體晶粒15的大部分區域成為自切割片材12剝離的狀態。 Further, the control unit 150 at time t 12 the output is switched to the adsorption pressure near vacuum in the third pressure P 3 of the instruction. According to this instruction, as indicated by an arrow 245 in Fig. 37, the air of the groove 26 is sucked to the vacuum device 140, the groove 26 becomes a vacuum, and the cut sheet 12 is vacuum-adsorbed to the adsorption face 22. In the steps up to the second third stripping step previously described, a substantial portion of the semiconductor die 15 is peeled off from the cut sheet 12, and thus the adhesion of the semiconductor die 15 to the cut sheet 12 dramatically drop. Therefore, when the distal end surface 633a of the third plate-shaped moving element 633 is moved to the second position, the cut sheet 12 in the region corresponding to the distal end surface 633a is in a state where the semiconductor crystal grain 15 is adsorbed to the tip 18 The tensile force F 6 in the obliquely downward direction due to the vacuum of the groove 26 is set to leave the semiconductor crystal grain 15 as indicated by an arrow 278 in FIG. Therefore, in the state shown in FIG. 37, the semiconductor die 15 in the region corresponding to each of the front end surface 634a and the front end surface 635a of the fourth plate-shaped moving element 634 and the fifth plate-shaped moving element 635 is attached to the dicing sheet. The material 12 is in a state in which most of the semiconductor crystal grains 15 are peeled off from the cut sheet 12.

控制部150在圖38A的時刻t13輸出使吸頭18上升的指令。根據該指令，圖1所示的吸頭驅動部130驅動馬達，如圖37的箭頭279所示般使吸頭18上升。切割片材12因槽26的真空而被真空吸附至吸附面22，因此當吸頭18上升時，與第4板狀移動元件634、第5板狀移動元件635的各前端面634a、前端面635a對應的區域的半導體晶粒15自切割片材12剝離，半導體晶粒15在由吸頭18吸附的狀態下被拾取。 The control unit outputs a command 150 t 13 the suction head 18 rises at time 38A of FIG. According to this command, the tip driving unit 130 shown in Fig. 1 drives the motor to raise the tip 18 as indicated by an arrow 279 in Fig. 37. Since the cut sheet 12 is vacuum-adsorbed to the adsorption surface 22 by the vacuum of the groove 26, the front end surface 634a and the front end surface of the fourth plate-shaped moving element 634 and the fifth plate-shaped moving element 635 are raised when the suction head 18 is raised. The semiconductor crystal grains 15 of the region corresponding to 635a are peeled off from the dicing sheet 12, and the semiconductor crystal grains 15 are picked up in a state of being adsorbed by the suction head 18.

在拾取半導體晶粒15後，控制部150在圖38A~圖38G中的時刻t14使滑塊51返回初始位置時，各板狀移動元件631~板狀移動元件635的各前端面631a~前端面635a返回第1位置。而且，控制部150使吸附壓力、開口壓力恢復為大氣壓而結束拾取動作， After the semiconductor die 15 is picked up, the control unit 150 returns the front end surface 631a to the front end of each of the plate-shaped moving element 631 to the plate-shaped moving element 635 when the slider 51 is returned to the initial position at time t 14 in FIGS. 38A to 38G. Face 635a returns to the first position. Further, the control unit 150 returns the suction pressure and the opening pressure to the atmospheric pressure, and ends the pickup operation.

如以上所說明的，控制部150如時刻t5至時刻t6般，將開口壓力、吸附壓力分別自接近真空的第1壓力P1、第3壓力P3切換為接近大氣壓的第2壓力P2、第4壓力P4，並且將第1板狀移動元件631的前端面631a自第1位置移動至第2位置，如時刻t8至時刻t9般，將開口壓力、吸附壓力分別自接近真空的第1壓力P1、第3壓力P3切換為接近大氣壓的第2壓力P2、第4壓力P4，並且，每當將開口壓力、吸附壓力自接近真空的第1壓力P1、第3壓力P3切換為接近大氣壓的第2壓力P2、第4壓力P4，以將第2板狀移動元件632的前端面632a自第1位置移動至第2位置時，沿著滑塊51的移動方向而自第1板狀移動元件631朝向第5板狀移動元件635依序使前端面自第1位置移動至第2位置，以此方式來重複第3剝離步驟，從而使半導體晶粒15沿著滑塊51的移動方向自一側朝向另一側來階段性地剝離切割片材12。 As described above, the control unit 150 switches the opening pressure and the adsorption pressure from the first pressure P 1 and the third pressure P 3 close to the vacuum to the second pressure P close to the atmospheric pressure, respectively, from time t 5 to time t 6 . 2 , the fourth pressure P 4 , and the front end surface 631 a of the first plate-shaped moving element 631 is moved from the first position to the second position, and the opening pressure and the adsorption pressure are respectively close to each other as in the time t 8 to the time t 9 . The first pressure P 1 and the third pressure P 3 of the vacuum are switched to the second pressure P 2 and the fourth pressure P 4 which are close to the atmospheric pressure, and the opening pressure and the adsorption pressure are from the first pressure P 1 close to the vacuum, When the third pressure P 3 is switched to the second pressure P 2 and the fourth pressure P 4 close to the atmospheric pressure, when the distal end surface 632a of the second plate-shaped moving element 632 is moved from the first position to the second position, the slider is moved along the slider. In the moving direction of 51, the first plate-shaped moving element 631 is moved from the first position to the second position in order from the first plate-shaped moving element 635, and the third peeling step is repeated in this manner to form the semiconductor crystal. The pellets 15 are peeled off stepwise from one side toward the other along the moving direction of the slider 51. Sheet 12.

以上所說明的實施形態的半導體晶粒的拾取裝置與先前說明的實施形態同樣，起到可抑制拾取時的半導體晶粒的損傷的效果。 The semiconductor wafer pick-up device of the embodiment described above has an effect of suppressing damage of the semiconductor crystal grains at the time of pick-up, similarly to the embodiment described above.

本發明並不限定於以上說明的實施形態，包含不脫離由申請專利範圍所規定的本發明的技術範圍或本質的所有變更及修正。 The present invention is not limited to the embodiments described above, and all changes and modifications may be made without departing from the spirit and scope of the invention as defined by the appended claims.

10‧‧‧晶圓固持器 10‧‧‧Wafer Holder

12‧‧‧切割片材 12‧‧‧cut sheet

12a、18a‧‧‧表面 12a, 18a‧‧‧ surface

12b‧‧‧背面 12b‧‧‧Back

13‧‧‧環 13‧‧‧ Ring

14‧‧‧間隙 14‧‧‧ gap

15‧‧‧半導體晶粒 15‧‧‧Semiconductor grain

16‧‧‧擴展環 16‧‧‧Extension ring

17‧‧‧壓環 17‧‧‧ Pressure ring

18‧‧‧吸頭 18‧‧‧ Tips

19‧‧‧抽吸孔 19‧‧‧ suction hole

20‧‧‧平台 20‧‧‧ platform

22‧‧‧吸附面 22‧‧‧Adsorption surface

23‧‧‧開口 23‧‧‧ openings

28a‧‧‧內表面 28a‧‧‧ inner surface

24‧‧‧基體部 24‧‧‧Base Department

25、82、92、102‧‧‧驅動部 25, 82, 92, 102‧‧‧ drive department

26、62、72‧‧‧槽 26, 62, 72‧‧‧ slots

27‧‧‧吸附孔 27‧‧‧Adsorption holes

28‧‧‧上側內部 28‧‧‧Upside interior

29‧‧‧下側內部 29‧‧‧Lower internal

29a‧‧‧階部 29a‧‧‧

30‧‧‧移動元件 30‧‧‧Mobile components

32a~32f、34a~34f‧‧‧導引面 32a~32f, 34a~34f‧‧‧ guiding surface

33‧‧‧外周面 33‧‧‧ outer perimeter

51‧‧‧滑塊 51‧‧‧ Slider

52‧‧‧半圓柱構件 52‧‧‧Semi-cylindrical components

53、59、63‧‧‧銷 53, 59, 63‧ ‧ sales

54‧‧‧導軌 54‧‧‧rails

55‧‧‧凸緣 55‧‧‧Flange

56‧‧‧活塞 56‧‧‧Piston

57‧‧‧板構件 57‧‧‧ board components

58‧‧‧彈簧 58‧‧‧ Spring

60‧‧‧連桿構件 60‧‧‧ linkage members

70‧‧‧上下方向驅動構件 70‧‧‧Upper and downward direction drive members

71‧‧‧臂 71‧‧‧ Arm

73‧‧‧驅動棒 73‧‧‧ drive rod

74‧‧‧凸輪從動件 74‧‧‧Cam followers

75‧‧‧凸輪 75‧‧‧ cam

76‧‧‧軸 76‧‧‧Axis

77‧‧‧馬達 77‧‧‧Motor

80‧‧‧開口壓力切換機構 80‧‧‧Opening pressure switching mechanism

81、91、101‧‧‧三通閥 81, 91, 101‧‧‧ three-way valve

83~85、93~95、103~105‧‧‧配管 83~85, 93~95, 103~105‧‧‧Pipe

90‧‧‧吸附壓力切換機構 90‧‧‧Adsorption pressure switching mechanism

100‧‧‧抽吸機構 100‧‧‧sucking mechanism

106‧‧‧流量感測器 106‧‧‧Flow sensor

107‧‧‧片材位移檢測感測器 107‧‧‧Sheet Displacement Detection Sensor

110‧‧‧晶圓固持器水平方向驅動部 110‧‧‧Wafer Holder Horizontal Direction Drive

120‧‧‧平台上下方向驅動部 120‧‧‧ Platform up and down direction drive

130‧‧‧吸頭驅動部 130‧‧‧Dipper drive department

140‧‧‧真空裝置 140‧‧‧Vacuum device

150‧‧‧控制部 150‧‧‧Control Department

151‧‧‧CPU 151‧‧‧CPU

152‧‧‧儲存部 152‧‧‧ Storage Department

153‧‧‧機器/感測器介面 153‧‧‧machine/sensor interface

154‧‧‧資料匯流排 154‧‧‧ data bus

155‧‧‧控制程式 155‧‧‧Control program

156‧‧‧控制資料 156‧‧‧Control data

157‧‧‧對位程式 157‧‧‧ alignment program

158‧‧‧第1剝離程式 158‧‧‧1st stripping program

159‧‧‧第2剝離程式 159‧‧‧2nd stripping program

160‧‧‧第3剝離程式 160‧‧‧3rd stripping program

300‧‧‧階差面形成機構 300‧‧ ‧ step surface forming mechanism

500‧‧‧半導體晶粒的拾取裝置 500‧‧‧Semiconductor die pick-up device

a、A、c、e‧‧‧箭頭 a, A, c, e‧‧‧ arrows

Claims (21)

一種半導體晶粒的拾取裝置，包括：平台，包含吸附面，所述吸附面包括：第1吸引部，作為吸附切割片材的背面的開口；以及第2吸引部，形成在所述第1吸引部的周圍，且能夠獨立於所述第1吸引部而吸附所述切割片材的背面，所述切割片材在表面貼附有要拾取的半導體晶粒；階差面形成機構，包含多個移動元件，形成相對於所述吸附面的階差面，所述多個移動元件配置在所述平台的所述吸附面上所設的所述開口內，且前端面在高於所述吸附面的第1位置與低於所述第1位置的第2位置之間移動；以及開口壓力切換機構，在接近真空的第1壓力與接近大氣壓的第2壓力之間切換所述開口的開口壓力，且在拾取所述半導體晶粒時，每當將所述開口壓力自所述第1壓力切換為所述第2壓力時，使至少1個所述移動元件自所述第1位置移動至所述第2位置。 A semiconductor wafer pick-up device includes: a stage including an adsorption surface, the adsorption surface including: a first suction portion as an opening for adsorbing a back surface of the cut sheet; and a second suction portion formed on the first suction portion The back surface of the dicing sheet is adsorbed independently of the first suction portion, the dicing sheet is attached with a semiconductor crystal grain to be picked up on the surface, and the step surface forming mechanism includes a plurality of Moving the element to form a step surface with respect to the adsorption surface, wherein the plurality of moving elements are disposed in the opening provided on the adsorption surface of the platform, and the front end surface is higher than the adsorption surface And moving the first pressure between the first position and the second position lower than the first position; and the opening pressure switching mechanism switches the opening pressure of the opening between a first pressure close to the vacuum and a second pressure close to the atmospheric pressure, And, when picking up the semiconductor die, moving at least one of the moving elements from the first position to the first time when the opening pressure is switched from the first pressure to the second pressure 2nd position. 如申請專利範圍第1項所述之半導體晶粒的拾取裝置，包括：吸附壓力切換機構，在接近真空的第3壓力與接近大氣壓的第4壓力之間切換所述吸附面的吸附壓力，在拾取所述半導體晶粒時，在將所述吸附壓力自所述第4壓力切換為所述第3壓力的狀態下，切換所述開口壓力。 The pick-up device for a semiconductor die according to claim 1, comprising: an adsorption pressure switching mechanism that switches an adsorption pressure of the adsorption surface between a third pressure close to a vacuum and a fourth pressure close to atmospheric pressure, When the semiconductor crystal grain is picked up, the opening pressure is switched in a state where the adsorption pressure is switched from the fourth pressure to the third pressure. 如申請專利範圍第2項所述之半導體晶粒的拾取裝置，其 中在拾取所述半導體晶粒時，將所述吸附壓力保持為所述第3壓力而切換所述開口壓力。 A pick-up device for a semiconductor die according to claim 2, When the semiconductor die is picked up, the adsorption pressure is maintained at the third pressure to switch the opening pressure. 如申請專利範圍第1項所述之半導體晶粒的拾取裝置，其中所述開口壓力切換機構在最先使所述移動元件自所述第1位置移動至所述第2位置之前，在所述第1壓力與所述第2壓力之間多次切換所述開口壓力。 The pick-up device for a semiconductor die according to claim 1, wherein the opening pressure switching mechanism is configured to move the moving member from the first position to the second position first, The opening pressure is switched a plurality of times between the first pressure and the second pressure. 如申請專利範圍第2項所述之半導體晶粒的拾取裝置，其中在拾取所述半導體晶粒時，在將所述吸附壓力自所述第4壓力切換為所述第3壓力的狀態下將所述開口壓力自所述第2壓力切換為所述第1壓力之後，將所述吸附壓力自所述第3壓力切換為所述第4壓力，並且每當將所述開口壓力自所述第1壓力切換為所述第2壓力時，使至少1個所述移動元件自所述第1位置移動至所述第2位置。 The pick-up device for a semiconductor die according to claim 2, wherein when the semiconductor die is picked up, a state in which the adsorption pressure is switched from the fourth pressure to the third pressure is After the opening pressure is switched from the second pressure to the first pressure, the adsorption pressure is switched from the third pressure to the fourth pressure, and the opening pressure is from the first When the pressure is switched to the second pressure, at least one of the moving elements is moved from the first position to the second position. 如申請專利範圍第1項所述之半導體晶粒的拾取裝置，包括：剝離檢測部件，對與自所述第1位置移動至所述第2位置的所述移動元件的所述前端面相向的所述半導體晶粒的一部分是否自所述切割片材的所述表面發生了剝離進行檢測，在由所述剝離檢測部件檢測出所述半導體晶粒的所述一部分 未自所述切割片材發生剝離的情況下，不使所述移動元件自所述第1位置移動至所述第2位置，而將所述開口壓力自所述第1壓力切換為所述第2壓力之後，將所述開口壓力再次自所述第2壓力切換為所述第1壓力。 The semiconductor wafer pick-up device according to claim 1, comprising: a peeling detecting member that faces the front end surface of the moving member that has moved from the first position to the second position Whether a portion of the semiconductor die is peeled off from the surface of the dicing sheet, and the portion of the semiconductor die is detected by the peel detecting member When the dicing sheet is not peeled off, the opening pressure is not changed from the first position to the second position, and the opening pressure is switched from the first pressure to the first After the pressure is 2, the opening pressure is again switched from the second pressure to the first pressure. 如申請專利範圍第6項所述之半導體晶粒的拾取裝置，包括：吸頭，吸附半導體晶粒；抽吸機構，連接於所述吸頭，自所述吸頭的表面抽吸空氣；以及流量感測器，對所述抽吸機構的抽吸空氣流量進行檢測，所述剝離檢測部件在對由所述流量感測器檢測出的抽吸空氣流量信號進行微分所得的微分信號超過規定的臨限值範圍的次數為偶數的情況下，判斷為發生了剝離，在所述次數為奇數的情況下，判斷為未發生剝離。 The pick-up device for a semiconductor die according to claim 6, comprising: a suction head for adsorbing the semiconductor die; and a suction mechanism connected to the tip to suck air from a surface of the tip; a flow sensor for detecting a suction air flow rate of the suction mechanism, wherein the differential signal obtained by differentiating the suction air flow signal detected by the flow sensor exceeds a prescribed value When the number of times of the threshold range is an even number, it is determined that peeling has occurred, and when the number of times is an odd number, it is determined that peeling has not occurred. 如申請專利範圍第1項所述之半導體晶粒的拾取裝置，包括：片材位移檢測感測器，對所述平台的開口內表面與階差面形成機構外周面之間的所述切割片材相對於所述吸附面的接離方向的位移進行檢測，將所述吸附壓力自所述第4壓力切換為所述第3壓力後，在經過規定的時間後，將所述開口壓力自所述第2壓力切換為所述第1壓力時，在由所述片材位移檢測感測器所檢測出的片材位移 為規定的臨限值以下的情況下，將所述吸附壓力自所述第3壓力切換為所述第4壓力，並且將所述開口壓力自所述第1壓力切換為所述第2壓力後，再次將所述吸附壓力自所述第4壓力切換為所述第3壓力後，在經過規定的時間後將所述開口壓力自所述第2壓力切換為所述第1壓力，以使所述平台的開口內表面與所述階差面形成機構外周面之間的所述切割片材自所述半導體晶粒剝離。 A pick-up device for a semiconductor die according to claim 1, comprising: a sheet displacement detecting sensor, the cutting piece between an opening inner surface of the stage and an outer peripheral surface of the step forming mechanism The displacement of the material with respect to the direction of separation of the adsorption surface is detected, and after the adsorption pressure is switched from the fourth pressure to the third pressure, the opening pressure is applied after a predetermined time has elapsed. When the second pressure is switched to the first pressure, the sheet displacement detected by the sheet displacement detecting sensor When the predetermined pressure is equal to or less than a predetermined threshold, the adsorption pressure is switched from the third pressure to the fourth pressure, and the opening pressure is switched from the first pressure to the second pressure. After switching the adsorption pressure from the fourth pressure to the third pressure again, after the predetermined time elapses, the opening pressure is switched from the second pressure to the first pressure, so that The cut sheet between the open inner surface of the stage and the outer peripheral surface of the step surface forming mechanism is peeled off from the semiconductor die. 如申請專利範圍第8項所述之半導體晶粒的拾取裝置，其中所述片材位移檢測感測器是使用相對於所述切割片材的透光率為0%至30%的區域的波長的光來作為光源。 A pick-up device for a semiconductor die according to claim 8, wherein the sheet displacement detecting sensor is a wavelength using a region of light transmittance of 0% to 30% with respect to the cut sheet The light comes as a light source. 如申請專利範圍第9項所述之半導體晶粒的拾取裝置，其中所述片材位移檢測感測器是使用將0nm至300nm的短波長的發光二極體作為光源的反射型光纖。 The semiconductor wafer pick-up device according to claim 9, wherein the sheet displacement detecting sensor is a reflective optical fiber using a short-wavelength light-emitting diode of 0 nm to 300 nm as a light source. 如申請專利範圍第1項所述之半導體晶粒的拾取裝置，其中所述階差面形成機構包括：柱狀移動元件，配置於中心；多個環狀移動元件，在所述柱狀移動元件的周圍配置成襯套狀；以及滑塊，在所述平台的所述開口內，在沿著所述吸附面的方向 上移動，各所述環狀移動元件具備各傾斜面，所述各傾斜面與所述滑塊接觸，藉由所述滑塊的移動而使各所述環狀移動元件在所述第1位置與所述第2位置之間移動，外周側的所述環狀移動元件的所述傾斜面與內周側的所述環狀移動元件的傾斜面是以下述方式而在所述滑塊的移動方向上偏離地配置：當所述滑塊移動時，外周側的所述環狀移動元件的前端面先於內周側的所述環狀移動元件的前端面而自所述第1位置移動至所述第2位置。 The pick-up device for a semiconductor die according to claim 1, wherein the step surface forming mechanism comprises: a columnar moving element disposed at a center; and a plurality of annular moving elements at the columnar moving element a periphery of the bushing; and a slider in the opening of the platform in a direction along the adsorption surface Moving upward, each of the annular moving elements includes each inclined surface, and the inclined surfaces are in contact with the slider, and each of the annular moving elements is in the first position by movement of the slider Moving between the second position, the inclined surface of the annular moving element on the outer peripheral side and the inclined surface of the annular moving element on the inner peripheral side are moved in the slider in the following manner When the slider is moved, the front end surface of the annular moving element on the outer peripheral side moves from the first position to the front end surface of the annular moving element on the inner peripheral side. The second position. 如申請專利範圍第11項所述之半導體晶粒的拾取裝置，其中所述柱狀移動元件具備傾斜面，所述傾斜面與所述滑塊接觸，藉由所述滑塊的移動來使所述柱狀移動元件在所述第1位置與所述第2位置之間移動，且所述傾斜面以下述方式而在所述滑塊的移動方向上偏離地配置：當所述滑塊移動時，所述內周側的環狀移動元件的前端面先於所述柱狀移動元件的前端面而自所述第1位置移動至所述第2位置。 The pick-up device for a semiconductor die according to claim 11, wherein the columnar moving member is provided with an inclined surface which is in contact with the slider, and is moved by the slider The columnar moving element moves between the first position and the second position, and the inclined surface is disposed to be offset in a moving direction of the slider in such a manner that when the slider moves The front end surface of the inner circumferential side annular moving element moves from the first position to the second position before the front end surface of the columnar moving element. 如申請專利範圍第1項所述之半導體晶粒的拾取裝置，其中所述階差面形成機構包括：滑塊，在所述平台的所述開口內，在沿著所述吸附面的方向上移動；以及 多個板狀移動元件，在所述滑塊的移動方向上重疊配置，各所述板狀移動元件具備各傾斜面，所述各傾斜面與所述滑塊接觸，藉由所述滑塊的移動來使各所述板狀移動元件在所述第1位置與所述第2位置之間移動，各所述板狀移動元件的各傾斜面是以下述方式而在所述滑塊的移動方向上偏離地配置：各所述板狀移動元件沿著所述滑塊的移動方向而自所述第1位置依序移動至所述第2位置。 The pick-up device for a semiconductor die according to claim 1, wherein the step surface forming mechanism comprises: a slider, in the opening of the platform, in a direction along the adsorption surface Move; a plurality of plate-like moving elements are disposed to overlap each other in a moving direction of the slider, and each of the plate-shaped moving elements includes each inclined surface, and the inclined surfaces are in contact with the slider by the slider Moving so that each of the plate-shaped moving elements moves between the first position and the second position, and each inclined surface of each of the plate-shaped moving elements is in a moving direction of the slider in the following manner Arranging upwardly from the ground: each of the plate-shaped moving elements sequentially moves from the first position to the second position along the moving direction of the slider. 一種半導體晶粒的拾取方法，包括：準備半導體晶粒的拾取裝置的步驟，所述半導體晶粒的拾取裝置包括平台、階差面形成機構、開口壓力切換機構以及吸附壓力切換機構，所述平台包含吸附面，所述吸附面吸附切割片材的背面，所述切割片材在表面貼附有要拾取的半導體晶粒，所述階差面形成機構包含多個移動元件，形成相對於所述吸附面的階差面，所述多個移動元件配置在所述平台的所述吸附面上所設的開口內，且前端面在高於所述吸附面的第1位置與低於所述第1位置的第2位置之間移動，所述開口壓力切換機構在接近真空的第1壓力與接近大氣壓的第2壓力之間切換所述開口的開口壓力，所述吸附壓力切換機構在接近真空的第3壓力與接近大氣壓的第4壓力之間切換所述吸附面的吸附壓力；對位步驟，將所述階差面形成機構的各所述移動元件的各前端面作為所述第1位置，以要拾取的所述半導體晶粒處於所述階差面形成機構的所述階差面正上方的方式來使所述平台在沿著所 述吸附面的方向上移動；第1剝離步驟，將所述吸附壓力自所述第4壓力切換為所述第3壓力後，在經過規定的時間後，將所述開口壓力自所述第2壓力切換為所述第1壓力，以使所述平台的開口內表面與所述階差面形成機構外周面之間的所述切割片材自所述半導體晶粒剝離；以及第2剝離步驟，在將所述吸附壓力保持為所述第3壓力的狀態下，每當將所述開口壓力自所述第1壓力切換為所述第2壓力時，使至少1個所述移動元件自所述第1位置移動至所述第2位置，從而使與所述移動元件的所述前端面相向的所述半導體晶粒的一部分自所述切割片材的所述表面剝離。 A method for picking up a semiconductor die, comprising: a step of preparing a pick-up device for a semiconductor die, the pick-up device of the semiconductor die comprising a stage, a step surface forming mechanism, an opening pressure switching mechanism, and an adsorption pressure switching mechanism, the platform An adsorption surface is disposed, the adsorption surface adsorbing a back surface of the cut sheet, the cut sheet is attached with a semiconductor die to be picked up on the surface, and the step surface forming mechanism includes a plurality of moving elements, and is formed with respect to the a step surface of the adsorption surface, wherein the plurality of moving elements are disposed in an opening provided on the adsorption surface of the platform, and the front end surface is at a first position higher than the adsorption surface and lower than the first Moving between the second position of the first position, the opening pressure switching mechanism switches the opening pressure of the opening between a first pressure close to the vacuum and a second pressure close to the atmospheric pressure, the adsorption pressure switching mechanism being close to the vacuum Switching the adsorption pressure of the adsorption surface between the third pressure and the fourth pressure close to the atmospheric pressure; and the aligning step of each of the moving elements of the step surface forming mechanism An end surface as the first position, wherein the semiconductor die to be picked up is directly above the step surface of the step surface forming mechanism Moving in the direction of the adsorption surface; in the first peeling step, after the adsorption pressure is switched from the fourth pressure to the third pressure, the opening pressure is from the second after a predetermined time elapses The pressure is switched to the first pressure such that the cut sheet between the open inner surface of the stage and the outer peripheral surface of the step surface forming mechanism is peeled from the semiconductor die; and the second peeling step, In a state where the adsorption pressure is maintained at the third pressure, at least one of the moving elements is caused to be self-switched each time the opening pressure is switched from the first pressure to the second pressure. The first position is moved to the second position, and a part of the semiconductor crystal grain facing the front end surface of the moving element is peeled off from the surface of the dicing sheet. 一種半導體晶粒的拾取方法，包括：準備半導體晶粒的拾取裝置的步驟，所述半導體晶粒的拾取裝置包括平台、階差面形成機構、開口壓力切換機構以及吸附壓力切換機構，所述平台包含吸附面，所述吸附面吸附切割片材的背面，所述切割片材在表面貼附有要拾取的半導體晶粒，所述階差面形成機構包含多個移動元件，形成相對於所述吸附面的階差面，所述多個移動元件配置在所述平台的所述吸附面上所設的開口內，且前端面在高於所述吸附面的第1位置與低於所述第1位置的第2位置之間移動，所述開口壓力切換機構在接近真空的第1壓力與接近大氣壓的第2壓力之間切換所述開口的開口壓力，所述吸附壓力切換機構在接近真空的第3壓力與接近大氣壓的第4 壓力之間切換所述吸附面的吸附壓力；對位步驟，將所述階差面形成機構的各所述移動元件的各前端面作為所述第1位置，以要拾取的所述半導體晶粒處於所述階差面形成機構的所述階差面正上方的方式來使所述平台在沿著所述吸附面的方向上移動；第1剝離步驟，將所述吸附壓力自所述第4壓力切換為所述第3壓力後，在經過規定的時間後，將所述開口壓力自所述第2壓力切換為所述第1壓力，以使所述平台的開口內表面與所述階差面形成機構外周面之間的所述切割片材自所述半導體晶粒剝離；以及第3剝離步驟，在將所述吸附壓力自所述第4壓力切換為所述第3壓力的狀態下，將所述開口壓力自所述第2壓力切換為所述第1壓力後，將所述吸附壓力自所述第3壓力切換為所述第4壓力，並且每當將所述開口壓力自所述第1壓力切換為所述第2壓力時，使至少1個所述移動元件自所述第1位置移動至所述第2位置，以使與所述移動元件的所述前端面相向的所述半導體晶粒的一部分自所述切割片材的所述表面剝離。 A method for picking up a semiconductor die, comprising: a step of preparing a pick-up device for a semiconductor die, the pick-up device of the semiconductor die comprising a stage, a step surface forming mechanism, an opening pressure switching mechanism, and an adsorption pressure switching mechanism, the platform An adsorption surface is disposed, the adsorption surface adsorbing a back surface of the cut sheet, the cut sheet is attached with a semiconductor die to be picked up on the surface, and the step surface forming mechanism includes a plurality of moving elements, and is formed with respect to the a step surface of the adsorption surface, wherein the plurality of moving elements are disposed in an opening provided on the adsorption surface of the platform, and the front end surface is at a first position higher than the adsorption surface and lower than the first Moving between the second position of the first position, the opening pressure switching mechanism switches the opening pressure of the opening between a first pressure close to the vacuum and a second pressure close to the atmospheric pressure, the adsorption pressure switching mechanism being close to the vacuum 3rd pressure and 4th near atmospheric pressure Switching the adsorption pressure of the adsorption surface between pressures; and aligning steps, using the front end faces of the moving elements of the step surface forming mechanism as the first position, to pick up the semiconductor die Positioning the platform directly in the direction along the adsorption surface in a manner directly above the step surface of the step surface forming mechanism; and in the first peeling step, the adsorption pressure is from the fourth After the pressure is switched to the third pressure, after a predetermined time elapses, the opening pressure is switched from the second pressure to the first pressure, so that the open inner surface of the platform and the step are The dicing sheet between the outer peripheral surfaces of the surface forming mechanism is peeled off from the semiconductor crystal grain; and the third peeling step is a state in which the adsorption pressure is switched from the fourth pressure to the third pressure, After switching the opening pressure from the second pressure to the first pressure, switching the adsorption pressure from the third pressure to the fourth pressure, and each time the opening pressure is from the When the first pressure is switched to the second pressure, at least one of the said The moving element moves from the first position to the second position such that a portion of the semiconductor die facing the front end surface of the moving element is peeled off from the surface of the cut sheet. 如申請專利範圍第14項或第15項所述之半導體晶粒的拾取方法，其中所述半導體晶粒的拾取裝置具備片材位移檢測感測器，所述片材位移檢測感測器對所述平台的開口內表面與所述階差面形成機構外周面之間的所述切割片材相對於所述吸附面的接離方向的 位移進行檢測，所述第1剝離步驟包括：第1剝離判斷步驟，將所述吸附壓力自所述第4壓力切換為所述第3壓力後，在經過規定的時間後，將所述開口壓力自所述第2壓力切換為所述第1壓力時，在由所述片材位移檢測感測器所檢測出的片材位移超過規定的臨限值的情況下，判斷為所述平台的開口內表面與所述階差面形成機構外周面之間的所述切割片材自所述半導體晶粒發生了剝離，在由所述片材位移檢測感測器所檢測出的片材位移為規定的臨限值以下的情況下，判斷為所述平台的開口內表面與所述階差面形成機構外周面之間的所述切割片材未自所述半導體晶粒發生剝離；以及第1重試步驟，在所述第1判斷步驟中判斷為所述平台的開口內表面與所述階差面形成機構外周面之間的所述切割片材未自所述半導體晶粒發生剝離的情況下，將所述吸附壓力自所述第3壓力切換為所述第4壓力，並且將所述開口壓力自所述第1壓力切換為所述第2壓力後，再次將所述吸附壓力自所述第4壓力切換為所述第3壓力後，在經過規定的時間後，將所述開口壓力自所述第2壓力切換為所述第1壓力，以使所述平台的開口內表面與所述階差面形成機構外周面之間的所述切割片材自所述半導體晶粒剝離。 The method of picking up a semiconductor die according to claim 14 or 15, wherein the pick-up device of the semiconductor die is provided with a sheet displacement detecting sensor, and the sheet displacement detecting sensor pair a direction of the separation of the cut sheet between the open inner surface of the platform and the outer peripheral surface of the step surface forming mechanism with respect to the adsorption surface The displacement is detected, and the first peeling step includes a first peeling determining step of switching the adsorption pressure from the fourth pressure to the third pressure, and then opening the opening pressure after a predetermined time elapses When the second pressure is switched to the first pressure, when the sheet displacement detected by the sheet displacement detecting sensor exceeds a predetermined threshold, it is determined that the opening of the platform is The cut sheet between the inner surface and the outer peripheral surface of the step surface forming mechanism is peeled off from the semiconductor die, and the sheet displacement detected by the sheet displacement detecting sensor is specified In the case of the threshold value or less, it is determined that the cut sheet between the inner surface of the opening of the stage and the outer peripheral surface of the step surface forming mechanism is not peeled off from the semiconductor crystal grain; and the first weight a test step of determining, in the first determining step, that the cut sheet between the open inner surface of the stage and the outer peripheral surface of the step surface forming mechanism is not peeled off from the semiconductor die Applying the adsorption pressure from the (3) the pressure is switched to the fourth pressure, and after the opening pressure is switched from the first pressure to the second pressure, the adsorption pressure is again switched from the fourth pressure to the third pressure. Thereafter, after a predetermined period of time, the opening pressure is switched from the second pressure to the first pressure so that between the open inner surface of the platform and the outer peripheral surface of the step surface forming mechanism The dicing sheet is peeled off from the semiconductor die. 如申請專利範圍第14項所述之半導體晶粒的拾取方法，其中 所述半導體晶粒的拾取裝置包括吸頭、抽吸機構以及流量感測器，所述吸頭吸附半導體晶粒，所述抽吸機構連接於所述吸頭，自所述吸頭的表面抽吸空氣，所述流量感測器對所述抽吸機構的抽吸空氣流量進行檢測，所述第2剝離步驟包括：第2剝離判斷步驟，在對由所述流量感測器檢測出的抽吸空氣流量信號進行微分所得的微分信號超過規定的臨限值範圍的次數為偶數的情況下，判斷為與自所述第1位置移動至所述第2位置的所述移動元件的所述前端面相向的所述半導體晶粒的一部分自所述切割片材的所述表面發生了剝離，在所述次數為奇數的情況下，判斷為所述半導體晶粒的所述一部分未自所述切割片材的所述表面發生剝離；以及第2重試步驟，在由所述第2剝離判斷步驟判斷為所述半導體晶粒的所述一部分未自所述切割片材的所述表面發生剝離的情況下，不使所述移動元件自所述第1位置移動至所述第2位置，而將所述開口壓力自所述第1壓力切換為所述第2壓力後，將所述開口壓力再次自所述第2壓力切換為所述第1壓力，以使所述半導體晶粒的所述一部分自所述切割片材的所述表面剝離。 The method for picking up a semiconductor die according to claim 14, wherein The pick-up device of the semiconductor die includes a suction head, a suction mechanism, and a flow sensor, the suction head adsorbing a semiconductor die, the suction mechanism is connected to the suction head, and is drawn from a surface of the suction head Suction air, the flow sensor detects a suction air flow rate of the suction mechanism, and the second peeling step includes: a second peeling determination step, in which the pumping is detected by the flow sensor When the number of times the differential signal obtained by differentiating the intake air flow rate signal exceeds the predetermined threshold range is an even number, it is determined that the front end of the moving element that has moved from the first position to the second position A portion of the semiconductor crystal grains facing each other is peeled off from the surface of the dicing sheet, and in the case where the number of times is an odd number, it is determined that the portion of the semiconductor crystal grain is not cut from the surface The surface of the sheet is peeled off; and the second retry step is determined by the second peeling determining step that the portion of the semiconductor crystal grain is not peeled off from the surface of the cut sheet Happening And not moving the moving element from the first position to the second position, and switching the opening pressure from the first pressure to the second pressure, and then opening the opening pressure again The second pressure is switched to the first pressure so that the portion of the semiconductor crystal grain is peeled off from the surface of the dicing sheet. 如申請專利範圍第15項所述之半導體晶粒的拾取方法，其中所述半導體晶粒的拾取裝置包括吸頭、抽吸機構以及流量感測器，所述吸頭吸附半導體晶粒，所述抽吸機構連接於所述吸頭， 自所述吸頭的表面抽吸空氣，所述流量感測器對所述抽吸機構的抽吸空氣流量進行檢測，所述第3剝離步驟包括：第3剝離判斷步驟，在對由所述流量感測器檢測出的抽吸空氣流量信號進行微分所得的微分信號超過規定的臨限值範圍的次數為偶數的情況下，判斷為與自所述第1位置移動至所述第2位置的所述移動元件的所述前端面相向的所述半導體晶粒的一部分自所述切割片材的所述表面發生了剝離，在所述次數為奇數的情況下，判斷為所述半導體晶粒的所述一部分未自所述切割片材的所述表面發生剝離；以及第3重試步驟，在由所述第3剝離判斷步驟判斷為所述半導體晶粒的所述一部分未自所述切割片材的所述表面發生剝離的情況下，不使所述移動元件自所述第1位置移動至所述第2位置，而將所述吸附壓力自所述第3壓力切換為所述第4壓力，並且將所述開口壓力自所述第1壓力切換為所述第2壓力後，所述吸附壓力再次自所述第4壓力切換為所述第3壓力，並且將所述開口壓力再次自所述第2壓力切換為所述第1壓力，以使所述半導體晶粒的所述一部分自所述切割片材的所述表面剝離。 The method of picking up a semiconductor die according to claim 15, wherein the pick-up device of the semiconductor die comprises a suction head, a suction mechanism, and a flow sensor, wherein the suction head adsorbs a semiconductor die, a suction mechanism is coupled to the tip, Air is sucked from a surface of the suction head, the flow sensor detects a suction air flow rate of the suction mechanism, and the third peeling step includes: a third peeling determination step, in the pair When the differential signal obtained by differentiating the extracted air flow rate signal detected by the flow sensor exceeds the predetermined threshold range is an even number, it is determined that the differential signal is moved from the first position to the second position. a part of the semiconductor crystal grain facing the front end surface of the moving element is peeled off from the surface of the dicing sheet, and in the case where the number of times is an odd number, it is determined that the semiconductor dies are The portion is not peeled off from the surface of the cut sheet; and a third retry step is determined by the third peel determination step that the portion of the semiconductor die is not from the cut piece When the surface of the material is peeled off, the adsorption pressure is not changed from the first position to the second position, and the adsorption pressure is switched from the third pressure to the fourth pressure. And will open After the port pressure is switched from the first pressure to the second pressure, the adsorption pressure is again switched from the fourth pressure to the third pressure, and the opening pressure is again switched from the second pressure. The first pressure is such that the portion of the semiconductor crystal grain is peeled off from the surface of the dicing sheet. 如申請專利範圍第16項所述之半導體晶粒的拾取方法，其中所述片材位移檢測感測器是使用相對於所述切割片材的透光率為0%至30%的區域的波長的光來作為光源。 The method of picking up a semiconductor die according to claim 16, wherein the sheet displacement detecting sensor is a wavelength using a region of light transmittance of 0% to 30% with respect to the cut sheet. The light comes as a light source. 如申請專利範圍第19項所述之半導體晶粒的拾取方法，其中所述片材位移檢測感測器是使用將0nm至300nm的短波長的發光二極體作為光源的反射型光纖。 The method of picking up a semiconductor crystal grain according to claim 19, wherein the sheet displacement detecting sensor is a reflective optical fiber using a short-wavelength light-emitting diode of 0 nm to 300 nm as a light source. 如申請專利範圍第14項或第15項所述之半導體晶粒的拾取方法，其中所述開口壓力切換機構在最先使所述移動元件自所述第1位置移動至所述第2位置之前，在所述第1壓力與所述第2壓力之間多次切換所述開口壓力。 The method of picking up a semiconductor die according to claim 14 or 15, wherein the opening pressure switching mechanism first moves the moving member from the first position to the second position The opening pressure is switched a plurality of times between the first pressure and the second pressure.
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