TWI570515B - 具有縮合系聚合物之euv微影用光阻下層膜形成組成物 - Google Patents
具有縮合系聚合物之euv微影用光阻下層膜形成組成物 Download PDFInfo
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- TWI570515B TWI570515B TW101127984A TW101127984A TWI570515B TW I570515 B TWI570515 B TW I570515B TW 101127984 A TW101127984 A TW 101127984A TW 101127984 A TW101127984 A TW 101127984A TW I570515 B TWI570515 B TW I570515B
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- 238000001900 extreme ultraviolet lithography Methods 0.000 title claims description 86
- 229920000642 polymer Polymers 0.000 title claims description 65
- 239000000203 mixture Substances 0.000 title claims description 55
- 229920002120 photoresistant polymer Polymers 0.000 claims description 142
- 150000001875 compounds Chemical class 0.000 claims description 88
- 125000004432 carbon atom Chemical group C* 0.000 claims description 47
- 125000000217 alkyl group Chemical group 0.000 claims description 31
- 239000002253 acid Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 23
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 22
- 239000002904 solvent Substances 0.000 claims description 21
- 239000007787 solid Substances 0.000 claims description 20
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 15
- 125000005843 halogen group Chemical group 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 125000003545 alkoxy group Chemical group 0.000 claims description 13
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 125000003342 alkenyl group Chemical group 0.000 claims description 10
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 9
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 9
- 125000004414 alkyl thio group Chemical group 0.000 claims description 8
- 125000002947 alkylene group Chemical group 0.000 claims description 8
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 claims description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 125000001624 naphthyl group Chemical group 0.000 claims description 5
- 238000005245 sintering Methods 0.000 claims description 5
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 125000002228 disulfide group Chemical group 0.000 claims description 4
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 3
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 3
- 150000000000 tetracarboxylic acids Chemical class 0.000 claims description 3
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 2
- -1 methylene, ethyl Chemical group 0.000 description 50
- 238000006243 chemical reaction Methods 0.000 description 22
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- 230000015572 biosynthetic process Effects 0.000 description 12
- FTOAOBMCPZCFFF-UHFFFAOYSA-N 5,5-diethylbarbituric acid Chemical compound CCC1(CC)C(=O)NC(=O)NC1=O FTOAOBMCPZCFFF-UHFFFAOYSA-N 0.000 description 10
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 9
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 8
- TWFZGCMQGLPBSX-UHFFFAOYSA-N Carbendazim Natural products C1=CC=C2NC(NC(=O)OC)=NC2=C1 TWFZGCMQGLPBSX-UHFFFAOYSA-N 0.000 description 7
- 239000006013 carbendazim Substances 0.000 description 7
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 6
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 239000003513 alkali Substances 0.000 description 6
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- 238000004090 dissolution Methods 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- LZCLXQDLBQLTDK-UHFFFAOYSA-N ethyl 2-hydroxypropanoate Chemical compound CCOC(=O)C(C)O LZCLXQDLBQLTDK-UHFFFAOYSA-N 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 230000002411 adverse Effects 0.000 description 5
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- FJKROLUGYXJWQN-UHFFFAOYSA-N 4-hydroxybenzoic acid Chemical compound OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 4
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 4
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 4
- 125000003118 aryl group Chemical group 0.000 description 4
- HTZCNXWZYVXIMZ-UHFFFAOYSA-M benzyl(triethyl)azanium;chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC1=CC=CC=C1 HTZCNXWZYVXIMZ-UHFFFAOYSA-M 0.000 description 4
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 4
- 235000014113 dietary fatty acids Nutrition 0.000 description 4
- 239000000194 fatty acid Substances 0.000 description 4
- 229930195729 fatty acid Natural products 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229920000573 polyethylene Polymers 0.000 description 4
- 239000011148 porous material Substances 0.000 description 4
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 4
- 125000001424 substituent group Chemical group 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- XGQJGMGAMHFMAO-UHFFFAOYSA-N 1,3,4,6-tetrakis(methoxymethyl)-3a,6a-dihydroimidazo[4,5-d]imidazole-2,5-dione Chemical compound COCN1C(=O)N(COC)C2C1N(COC)C(=O)N2COC XGQJGMGAMHFMAO-UHFFFAOYSA-N 0.000 description 3
- WFCOXVISFBRIKN-UHFFFAOYSA-N 1,3-bis(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)NC(=O)N1CC1CO1 WFCOXVISFBRIKN-UHFFFAOYSA-N 0.000 description 3
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 229920001214 Polysorbate 60 Polymers 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 150000001412 amines Chemical class 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 3
- 229960001231 choline Drugs 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 3
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
- 239000006254 rheological additive Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- UWFRVQVNYNPBEF-UHFFFAOYSA-N 1-(2,4-dimethylphenyl)propan-1-one Chemical compound CCC(=O)C1=CC=C(C)C=C1C UWFRVQVNYNPBEF-UHFFFAOYSA-N 0.000 description 2
- KQEJGXLRINKCST-UHFFFAOYSA-N 1-methyl-3,5-bis(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(C)C(=O)N1CC1CO1 KQEJGXLRINKCST-UHFFFAOYSA-N 0.000 description 2
- PNXPXUDJXYVOFM-UHFFFAOYSA-N 2,3,5,6-tetrabromoterephthalic acid Chemical compound OC(=O)C1=C(Br)C(Br)=C(C(O)=O)C(Br)=C1Br PNXPXUDJXYVOFM-UHFFFAOYSA-N 0.000 description 2
- OYFRNYNHAZOYNF-UHFFFAOYSA-N 2,5-dihydroxyterephthalic acid Chemical compound OC(=O)C1=CC(O)=C(C(O)=O)C=C1O OYFRNYNHAZOYNF-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- YCPXWRQRBFJBPZ-UHFFFAOYSA-N 5-sulfosalicylic acid Chemical compound OC(=O)C1=CC(S(O)(=O)=O)=CC=C1O YCPXWRQRBFJBPZ-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- MRABAEUHTLLEML-UHFFFAOYSA-N Butyl lactate Chemical compound CCCCOC(=O)C(C)O MRABAEUHTLLEML-UHFFFAOYSA-N 0.000 description 2
- KCXZNSGUUQJJTR-UHFFFAOYSA-N Di-n-hexyl phthalate Chemical compound CCCCCCOC(=O)C1=CC=CC=C1C(=O)OCCCCCC KCXZNSGUUQJJTR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- NIQCNGHVCWTJSM-UHFFFAOYSA-N Dimethyl phthalate Chemical compound COC(=O)C1=CC=CC=C1C(=O)OC NIQCNGHVCWTJSM-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
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- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
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- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 235000019270 ammonium chloride Nutrition 0.000 description 2
- 150000003863 ammonium salts Chemical class 0.000 description 2
- VIROVYVQCGLCII-UHFFFAOYSA-N amobarbital Chemical compound CC(C)CCC1(CC)C(=O)NC(=O)NC1=O VIROVYVQCGLCII-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- HNYOPLTXPVRDBG-UHFFFAOYSA-N barbituric acid Chemical compound O=C1CC(=O)NC(=O)N1 HNYOPLTXPVRDBG-UHFFFAOYSA-N 0.000 description 2
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- NEPKLUNSRVEBIX-UHFFFAOYSA-N bis(oxiran-2-ylmethyl) benzene-1,4-dicarboxylate Chemical compound C=1C=C(C(=O)OCC2OC2)C=CC=1C(=O)OCC1CO1 NEPKLUNSRVEBIX-UHFFFAOYSA-N 0.000 description 2
- 239000001191 butyl (2R)-2-hydroxypropanoate Substances 0.000 description 2
- JNPZQRQPIHJYNM-UHFFFAOYSA-N carbendazim Chemical compound C1=C[CH]C2=NC(NC(=O)OC)=NC2=C1 JNPZQRQPIHJYNM-UHFFFAOYSA-N 0.000 description 2
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- 239000003054 catalyst Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
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- 238000011161 development Methods 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
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- MGWAVDBGNNKXQV-UHFFFAOYSA-N diisobutyl phthalate Chemical compound CC(C)COC(=O)C1=CC=CC=C1C(=O)OCC(C)C MGWAVDBGNNKXQV-UHFFFAOYSA-N 0.000 description 2
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
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- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 2
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- WEXRUCMBJFQVBZ-UHFFFAOYSA-N pentobarbital Chemical compound CCCC(C)C1(CC)C(=O)NC(=O)NC1=O WEXRUCMBJFQVBZ-UHFFFAOYSA-N 0.000 description 2
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- ZORQXIQZAOLNGE-UHFFFAOYSA-N 1,1-difluorocyclohexane Chemical compound FC1(F)CCCCC1 ZORQXIQZAOLNGE-UHFFFAOYSA-N 0.000 description 1
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- AQOMMUIIMGZRMO-UHFFFAOYSA-N 1,3-bis(oxiran-2-ylmethyl)-5-phenyl-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(C=2C=CC=CC=2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 AQOMMUIIMGZRMO-UHFFFAOYSA-N 0.000 description 1
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- ITMCEJHCFYSIIV-UHFFFAOYSA-M triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-M 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- FAYMLNNRGCYLSR-UHFFFAOYSA-M triphenylsulfonium triflate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 FAYMLNNRGCYLSR-UHFFFAOYSA-M 0.000 description 1
- ZJHHPAUQMCHPRB-UHFFFAOYSA-N urea urea Chemical compound NC(N)=O.NC(N)=O ZJHHPAUQMCHPRB-UHFFFAOYSA-N 0.000 description 1
- 150000003672 ureas Chemical class 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- RAFOHKSPUDGZPR-VOTSOKGWSA-N vinbarbital Chemical compound CC\C=C(/C)C1(CC)C(=O)NC(=O)NC1=O RAFOHKSPUDGZPR-VOTSOKGWSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Description
本發明係有關降低受到可用於使用EUV微影之裝置製作步驟之EUV的不良影響,得到良好光阻圖型之有用的EUV微影用光阻下層膜組成物、及使用該EUV微影用光阻下層膜組成物的光阻圖型形成法。
以往製造半導體裝置時,採用光微影技術的微細加工。前述微細加工係在矽晶圓等之被加工基板上形成光阻組成物的薄膜,其上介於描繪有半導體裝置之圖型之光罩圖型,照射紫外線等之活性光線,然後顯影,將所得之光阻圖型作為保護膜,對矽晶圓等之被加工基板進行蝕刻處理的加工法。
近年,半導體裝置之高集成度化進行,所使用的活性光線也由KrF準分子雷射(248nm)至ArF準分子雷射(193nm)形成短波長化。隨著此變化,由活性光線之基板之亂反射或常駐波的影響變成較大的問題,因此廣泛採用在光阻與被加工基板之間設置作為擔任防止反射功用之光阻下層膜的防反射膜(bottom anti-reflective coating、BARC)的方法。作為防反射膜例如有鈦、二氧化鈦、氮化鈦、氧化鉻、碳、α-矽等的無機防反射膜及由吸光性物質與高分子化合物所組成的有機防反射膜為眾所周知。前者在膜形成需要真空蒸鍍裝置、CVD裝置、濺鍍裝置等
的設備,而後者不需要特別的設備,此點較有利,因此有許多相關的研討。例如有在同一分子內具有交聯反應基的羥基與吸光基的丙烯酸樹脂型防反射膜,在同一分子內具有交聯反應基的羥基與吸光基的酚醛樹脂型防反射膜等。
作為有機防反射膜材料所期望的物性,例如有對光或輻射線具有較大吸光,不會與光阻層產生內部混合(不溶於光阻溶劑),塗佈時或加熱乾燥時,低分子擴散物不會由反射防止膜材料擴散至上塗光阻中,相對於光阻,具有較大之蝕刻速度等(參照專利文獻1)。
近年,作為擔任使用ArF準分子雷射(193nm)之光微影技術之後的下一代的光微影技術,例如正盛行檢討介於水進行曝光的ArF浸液微影技術。但是使用光的光微影技術正面臨極限,作為ArF浸液微影技術以後新的微影技術,例如使用EUV(波長13.5nm)的EUV微影技術受到矚目。
使用EUV微影之裝置製作步驟係受到底部基板或EUV而有不良影響,會產生EUV微影用光阻之圖型成為底部拉引的形狀或底切形狀,無法形成直立形狀良好的光阻圖型,無法得到對EUV為感度低且充分的生產量(throughput)等的問題。因此EUV微影步驟雖不需要具有反射防止能的光阻下層膜(反射防止膜),但是需要降低此等不良影響,形成直立(Straight)形狀良好的光阻圖型,可提高光阻感度的EUV微影用光阻下層膜。
又,EUV微影用光阻下層膜在成膜後,其上被塗佈
光阻,因此與反射防止膜同樣,必須要不會與光阻層產生內部混合(不溶於光阻溶劑),塗佈時或加熱乾燥時,低分子擴散物不會由反射防止膜材料擴散至上塗光阻等的物性。
此外,使用EUV微影的世代,光阻圖型寬變得非常微細,因此EUV微影用光阻形成薄膜化較佳。因此有機反射防止膜藉由蝕刻除去步驟所花費的時間必須大幅減少,需要可以薄膜使用的EUV微影用光阻下層膜、或與EUV微影用光阻之蝕刻速度之選擇比較大的EUV微影用光阻下層膜。
EUV微影用光阻下層膜,例如有包含含有鹵素原子的酚醛樹脂或含有酸酐之樹脂的光阻下層膜形成組成物(參照專利文獻2、專利文獻3)。
[專利文獻1]國際公開WO2005-098542簡介
[專利文獻2]國際公開WO2010-122948簡介
[專利文獻3]國際公開WO2009-104685簡介
本發明係提供半導體裝置製造之EUV微影製程用的
EUV微影用光阻下層膜形成組成物。又,本發明係提供降低底部基板或EUV的不良影響,形成直立形狀良好的光阻圖型,可提高光阻感度,不會與光阻層產生內部混合,相較於光阻,具有較高之乾蝕刻速度的EUV微影用光阻下層膜。此外,本發明係提供使用該EUV微影用光阻下層膜形成組成物之EUV微影用光阻之圖型的形成法。
本案發明之第1觀點為一種EUV微影用光阻下層膜形成組成物,其係含有:具有以下式中式(1):
〔式中,A1、A2、A3、A4、A5、及A6係分別表示氫原子、甲基或乙基,X1係表示式(2)、式(3)、式(4)、或式(0):
(式中,R1及R2係分別表示氫原子、鹵素原子、碳原子
數1~6之烷基、碳原子數3~6之烯基、苄基或苯基,前述碳原子數1~6之烷基、碳原子數3~6之烯基、苄基及苯基可被選自由碳原子數1~6之烷基、鹵素原子、碳原子數1~6之烷氧基、硝基、氰基、羥基、羧基及碳原子數1~6之烷硫基所成群之基團所取代,R1與R2互相鍵結可形成碳原子數3~6的環,R3係表示鹵素原子、碳原子數1~6之烷基、碳原子數3~6之烯基、苄基或苯基,前述苯基可被選自由碳原子數1~6之烷基、鹵素原子、碳數1~6之烷氧基、硝基、氰基、羥基、及碳原子數1~6之烷硫基所成群之基團所取代),Q係表示式(5)或式(6):
(式中,Q1係表示碳原子數1~10之伸烷基、伸苯基、伸萘基、或伸蒽基,前述伸烷基、伸苯基、伸萘基、及伸蒽基係分別可被選自由碳原子數1~6之烷基、碳原子數2~7之羰氧基烷基、鹵素原子、碳原子數1~6之烷氧基、苯基、硝基、氰基、羥基、碳原子數1~6之烷硫基、具有二硫基的基團、羧基或彼等組合所成的基團取代,n1及n2係分別表示0或1之數,X2係表示式(2)、式(3)、或式(0))〕表示之重複單位結構的聚合物、及溶劑。
第2觀點為一種EUV微影用光阻下層膜形成組成物,其係含有具有以式(1)表示之重複單位結構的聚合物、交聯性化合物及溶劑。
第3觀點為一種EUV微影用光阻下層膜形成組成物,其係含有具有以式(1)表示之重複單位結構的聚合物、交聯性化合物、酸化合物及溶劑。
第4觀點為如第1~3觀點中任一觀點之EUV微影用光阻下層膜形成組成物,其中前述具有以式(1)表示之重複單位結構的聚合物為藉由式(7)表示之化合物與式(8)表示之化合物之反應所製造的聚合物,
(式(7)中,X1係表示與第1觀點所定義者相同意義,式(8)中,Q、A1、A2、A3、A4、A5、及A6表示與第1觀點所定義者相同意義)。
第5觀點為如第1~3觀點中任一觀點之EUV微影用光阻下層膜形成組成物,其中前述具有以式(1)表示之重複單位結構的聚合物為藉由式(9)表示之化合物與式(10)表示之化合物之反應所製造的聚合物,
(式(9)中,X1、A1、A2、A3、A4、A5、及A6係表示與第1觀點所定義者相同意義。式(10)中,Q係表示與第1觀點所定義者相同意義。式(10)之化合物為四羧酸衍生物時,可為四羧酸二酐)。
第6觀點為如第1~5觀點中任一觀點之EUV微影用光阻下層膜形成組成物,其中EUV微影用光阻下層膜形成組成物之固形分為0.001~1.0質量%。
第7觀點為如第1~5觀點中任一觀點之EUV微影用光阻下層膜形成組成物,其中EUV微影用光阻下層膜形成組成物之固形分為0.001~0.49質量%。
第8觀點為一種EUV微影用光阻下層膜,其特徵係將如第1~7觀點中任一觀點之EUV微影用光阻下層膜形成組成物塗佈於半導體基板上,藉由燒結而得。
第9觀點為如第8觀點之EUV微影用光阻下層膜,其中上述光阻下層膜的膜厚為1nm~20nm。
第10觀點為一種半導體裝置之製造用之EUV光阻圖型的形成方法,其特徵係含有以下步驟:
將如第1~7觀點中任一觀點之EUV微影用光阻下層膜形成組成物塗佈於半導體基板上,經燒結形成EUV微
影用光阻下層膜的步驟,該EUV微影用光阻下層膜上形成EUV光阻層的步驟,將EUV微影用光阻下層膜與以EUV光阻層被覆的半導體基板進行曝光的步驟,曝光後,將EUV光阻層進行顯影的步驟。
第11觀點為如第10觀點之EUV光阻圖型的形成方法,其中上述光阻下層膜的膜厚為1nm~20nm。
藉由本發明之EUV微影用光阻下層膜形成組成物所得的光阻下層膜係藉由降低底部基板或EUV的不良影響,形成直立形狀良好的光阻圖型,可提高光阻感度。又,本光阻下層膜相較於形成於上層的光阻膜,具有較高的乾蝕刻速度,藉由乾蝕刻步驟可容易將光阻圖型轉印至加工對象的底層膜上。
又使用本發明之EUV微影用光阻下層膜形成組成物所形成的下層膜係與光阻膜或底層膜的密著性優異者。
相對於以往光微影製程所使用的光阻下層膜(反射防止膜)為防止由基板所產生之反射光者,本發明之EUV微影用光阻下層膜不需要防止反射光的效果,形成於EUV微影用光阻膜之下,在EUV照射時可提高光阻的感度,可形成鮮明的光阻圖型。
本發明之EUV微影用光阻下層膜形成組成物係含有具有以式(1)表示之重複單位結構的聚合物及溶劑。又,本發明之EUV微影用光阻下層膜形成組成物係含有具有以式(1)表示之重複單位結構的聚合物、交聯性化合物及溶劑。又,本發明之EUV微影用光阻下層膜形成組成物係含有具有以式(1)表示之重複單位結構的聚合物、交聯性化合物、酸化合物及溶劑。本發明之EUV微影用光阻下層膜形成組成物可含有其他的聚合物、吸光性化合物及界面活性劑等。
本發明之EUV微影用光阻下層膜形成組成物中,具有以式(1)表示之重複單位結構的聚合物為必須成分。本發明之EUV微影用光阻下層膜形成組成物之固形分所佔有之具有以式(1)表示之重複單位結構之聚合物的比例為50質量%以上,較佳為60質量%以上。本發明之EUV微影用光阻下層膜形成組成物中之固形分的比例,只要是各成分於溶劑中均勻溶解時,即無特別限定,例如為0.001~50質量%,0.5~50質量%,或1~30質量%或5~25質量%。本案EUV微影用光阻下層膜係例如以膜厚1nm~20nm程度的薄膜使用時,可顯示良好的光阻形狀,因此為了調整成此等膜厚時,上述固形分可為0.001~1.0質量%,或0.001~0.50質量%,或0.001~0.49質量%,或0.001~0.40質量%。為了形成此種薄膜時,可使用以上述式(1)表示之聚合物。在此固形分係指由EUV微影
用光阻下層膜形成組成物之全成分中除去溶劑成分者。
本發明之EUV微影用光阻下層膜形成組成物係含有具有以式(1)表示之重複單位結構的聚合物。式(1)中,A1、A2、A3、A4、A5、及A6係分別表示氫原子、甲基或乙基。X1係表示式(2)、式(3)、式(4)、或式(0),Q係表示式(5)或式(6)。又,較佳為X1可表示式(2)、式(3)、或式(4)。
式(2)及式(3)中,R1及R2係分別表示氫原子、碳原子數1~6之烷基、碳原子數3~6之烯基、苄基或苯基。烷基之具體例,例如有甲基、乙基、丙基、異丙基、正丁基及環己基等。烯基之具體例有2-丙烯基及3-丁烯基等。又,前述苯基可被選自由碳原子數1~6之烷基、鹵素原子、碳原子數1~6之烷氧基、硝基、氰基、羥基、及碳原子數1~6之烷硫基所群之基團取代。又,R1與R2互相鍵結可形成碳數3~6的環,這種環例如有環丁烷環、環戊烷環及環己烷環。
式(4)中,R3係表示碳原子數1~6之烷基、碳原子數3~6之烯基、苄基或苯基,前述苯基可被選自由碳原子數1~6之烷基、鹵素原子、碳數1~6之烷氧基、硝基、氰基、羥基、及碳原子數1~6之烷硫基所成群之基團所取代。烷基及烯基之具體例,係與例如有與前述同樣的基團。烷氧基例如有甲氧基、乙氧基、丙氧基、異丙氧基等。
式(5)中,Q1係表示碳原子數1~10之伸烷基、伸
苯基、伸萘基、或伸蒽基,前述伸烷基、伸苯基、伸萘基、及伸蒽基係分別可被選自由碳原子數1~6之烷基、碳原子數2~7之羰氧基烷基、鹵素原子、碳原子數1~6之烷氧基、硝基、氰基、羥基、碳原子數1~6之烷硫基、具有二硫基的基團或彼等組合所成的基團取代。羰氧基烷基之烷基部分可使用上述烷基。另外,組合羰氧基烷基與烷氧基的有機基作為取代基使用時,烷基成為伸烷基,此伸烷基例如有下述伸烷基,烷氧基例如有上述的烷氧基。
具有二硫基的基團,例如有-S-S-R基或-R-S-S-R。在此R係表示下述的烷基、伸烷基、芳基、伸芳基。
伸烷基之具體例有亞甲基、伸乙基、伸丙基、伸異丙基、伸正戊基、伸環丁基、伸環戊基、伸環己基及2-甲基伸丙基等。
烷基之具體例有甲基、乙基、丙基、異丙基、正丁基及環己基。
芳基的具體例有苯基。伸芳基之具體例有伸苯基、伸萘基及伸蒽基。
n1及n2係分別表示0或1之數,X2係表示式(2)、式(3)、或式(0)。又,較佳為X2係表示式(2)、或式(3)。
前述式(7)中之X1係表示與前述式(1)中之X1相同意義,前述式(8)中之Q,A1,A2,A3、A4,A5、及A6係表示與前述式(1)中之Q,A1,A2,A3、A4,A5、及A6相同意義。又,前述式(9)中之X1、A1,A2,A3
、A4,A5、及A6係表示與前述式(1)中之X1、A1,A2,A3、A4,A5、及A6相同意義,前述式(10)之Q係表示與前述式(1)中之Q相同意義。
式(1)表示之重複單位結構的具體例,例如有式(13)~式(32)的重複單位結構。
上述式(32)中,R係醇殘基(醇之羥基以外的有機基),此R係表示烷基、醚基或彼等之組合。上述R例如有烷基、烷氧基烷基等。烷基、烷氧基,例如有上述的例子。
本發明之EUV微影用光阻下層膜形成組成物所含之具有以式(1)表示之重複單位結構的聚合物,例如有藉
由以式(7)表示之化合物與式(8)表示之化合物的反應來製造。
以式(7)表示之化合物與式(8)表示之化合物的反應係溶解於苯、甲苯、二甲苯、乳酸乙酯、乳酸丁酯、丙二醇單甲醚、丙二醇單甲醚乙酸酯及N-甲基吡咯烷酮等之有機溶劑中的溶液狀態下進行較佳。然後,此反應可以苄基三乙基氯化銨、四丁基氯化銨、及乙基溴化銨等的四級銨鹽作為觸媒使用。本反應之反應溫度、反應時間係依使用的化合物、濃度等而定,但是可適當選自反應時間0.1~100小時,反應溫度20℃~200℃的範圍。使用觸媒時,相對於使用的化合物的全質量,可使用0.001~30質量%的範圍。
又,反應使用之以式(7)及式(8)表示之化合物的比例,以莫耳比表示,以式(7)表示之化合物:以式(8)表示之化合物為3:1~1:3,較佳為3:2~2:3。
式(7)與式(8)表示之化合物之反應係式(7)之化合物之2個反應部位(N-H部分)分別與另外式(8)之化合物的環氧環部分之間產生環氧開環反應。結果生成具有以式(1)表示之重複單位結構的聚合物。聚合物係由以式(1)表示之重複單位結構之重複所構成。
具有以前述式(1)表示之重複單位結構之聚合物之製造所使用之式(7)表示之化合物的具體例,例如有乙內醯脲(Hydantoin)、5,5-二苯基乙內醯脲、5,5-二甲基乙內醯脲、5-乙基乙內醯脲、5-苄基乙內醯脲、5-乙基-5-
苯基乙內醯脲、5-甲基乙內醯脲、5,5-伸丁基乙內醯脲、5,5-伸戊基乙內醯脲、5-(4-羥基苄基)-乙內醯脲、5-苯基乙內醯脲、5-羥基甲基乙內醯脲、及5-(2-氰乙基)乙內醯脲等之乙內醯脲化合物。
又,以式(7)表示之化合物的具體例,例如有5,5-二乙基巴比妥酸(barbituric acid)、5,5-二烯丙基巴比妥酸、5-乙基-5-異戊基巴比妥酸、5-烯丙基-5-異丁基巴比妥酸、5-烯丙基-5-異丙基巴比妥酸、5-β-溴烯丙基-5-sec-丁基巴比妥酸、5-乙基-5-(1-甲基-1-丁烯基)巴比妥酸、5-異丙基-5-β-溴烯丙基巴比妥酸、5-(1-環己基)-5-乙基巴比妥酸、5-乙基-5-(1-甲基丁基)巴比妥酸、5,5-二溴巴比妥酸、5-苯基-5-乙基巴比妥酸、及5-乙基-5-正丁基巴比妥酸等之巴比妥酸化合物。
又,以式(7)表示之化合物的具體例,例如有單烯丙基異三聚氰酸(Isocyanuric acid)、單甲基異三聚氰酸、單丙基異三聚氰酸、單異丙基異三聚氰酸、單苯基異三聚氰酸、單苄基異三聚氰酸、單氯異三聚氰酸、及單乙基異三聚氰酸等之異三聚氰酸化合物。
具有以前述式(1)表示之重複單位結構之聚合物之製造所使用之式(8)表示之化合物的具體例,例如有對苯二甲酸二縮水甘油酯、間苯二甲酸二縮水甘油酯、苯二甲酸二縮水甘油酯、2,5-二甲基對苯二甲酸二縮水甘油酯、2,5-二乙基對苯二甲酸二縮水甘油酯、2,3,5,6-四氯對苯二甲酸二縮水甘油酯、2,3,5,6-四溴對苯二甲酸二縮水甘
油酯、2-硝基對苯二甲酸二縮水甘油酯、2,3,5,6-四氟對苯二甲酸二縮水甘油酯、2,5-二羥基對苯二甲酸二縮水甘油酯、2,6-二甲基對苯二甲酸二縮水甘油酯、2,5-二氯對苯二甲酸二縮水甘油酯、2,3-二氯間苯二甲酸二縮水甘油酯、3-硝基間苯二甲酸二縮水甘油酯、2-溴間苯二甲酸二縮水甘油酯、2-羥基間苯二甲酸二縮水甘油酯、3-羥基間苯二甲酸二縮水甘油酯、2-甲氧基間苯二甲酸二縮水甘油酯、5-苯基間苯二甲酸二縮水甘油酯、3-硝基苯二甲酸二縮水甘油酯、3,4,5,6-四氯苯二甲酸二縮水甘油酯、4,5-二氯苯二甲酸二縮水甘油酯、4-羥基苯二甲酸二縮水甘油酯、4-硝基苯二甲酸二縮水甘油酯、4-甲基苯二甲酸二縮水甘油酯、3,4,5,6-四氟苯二甲酸二縮水甘油酯、2,6-萘二羧酸二縮水甘油酯、1,2-萘二羧酸二縮水甘油酯、1,4-萘二羧酸二縮水甘油酯、1,8-萘二羧酸二縮水甘油酯、蒽-9,10-二羧酸二縮水甘油酯、及乙二醇二縮水甘油醚等之二縮水甘油基化合物。
又,以式(8)表示之化合物的具體例,例如有1,3-二縮水甘油基乙內醯脲、1,3-二縮水甘油基-5,5-二苯基乙內醯脲、1,3-二縮水甘油基-5,5-二甲基乙內醯脲、1,3-二縮水甘油基-5-甲基乙內醯脲、1,3-二縮水甘油基-5-乙基-5-苯基乙內醯脲、1,3-二縮水甘油基-5-苄基乙內醯脲、1,3-二縮水甘油基-5-乙內醯脲酢酸、1,3-二縮水甘油基-5-乙基-5-甲基乙內醯脲、1,3-二縮水甘油基-5,5-伸丁基乙內醯脲、1,3-二縮水甘油基-5,5-伸戊基乙內醯脲、1,3-二縮
水甘油基-5-(4-羥基苄基)乙內醯脲、1,3-二縮水甘油基-5-苯基乙內醯脲、1,3-二縮水甘油基-5-羥基甲基-乙內醯脲、及1,3-二縮水甘油基-5-(2-氰乙基)乙內醯脲等之二縮水甘油基乙內醯脲化合物。
又,以式(8)表示之化合物的具體例,例如有1,3-二縮水甘油基-5,5-二乙基巴比妥酸、1,3-二縮水甘油基-5-苯基-5-乙基巴比妥酸、1,3-二縮水甘油基-5-乙基-5-異戊基巴比妥酸、1,3-二縮水甘油基-5-烯丙基-5-異丁基巴比妥酸、1,3-二縮水甘油基-5-烯丙基-5-異丙基巴比妥酸、1,3-二縮水甘油基-5-β-溴烯丙基-5-sec-丁基巴比妥酸、1,3-二縮水甘油基-5-乙基-5-(1-甲基-1-丁烯基)巴比妥酸、1,3-二縮水甘油基-5-異丙基-5-β-溴烯丙基巴比妥酸、1,3-二縮水甘油基-5-(1-環己基)-5-乙基巴比妥酸、1,3-二縮水甘油基-5-乙基-5-(1-甲基丁基)巴比妥酸、1,3-二縮水甘油基-5,5-二烯丙基巴比妥酸二縮水甘油基、及1,3-二縮水甘油基-5-乙基-5-正丁基巴比妥酸等之二縮水甘油基巴比妥酸化合物。
具有以式(1)表示之重複單位結構之聚合物之製造時,以式(7)及式(8)表示之化合物可分別使用僅一種或組合二種以上的化合物來使用。又,例如使用單烯丙基異三聚氰酸作為式(7)的化合物,使用對苯二甲酸二縮水甘油酯作為式(8)之化合物時,所得的聚合物係由式(15)之重複單位結構所構成的聚合物。又,例如使用5,5-二乙基巴比妥酸作為式(7)的化合物,使用對苯二
甲酸二縮水甘油酯與乙二醇二縮水甘油醚的二種作為式(8)的化合物時,所得的聚合物係前述式(16)之重複單位結構與前述式(29)之重複單位結構所構成的聚合物。
本發明之EUV微影用光阻下層膜形成組成物所含有之具有以式(1)表示之重複單位結構的聚合物,可藉由以式(9)表示之化合物與以式(10)表示之化合物的反應而製造。
以式(9)與式(10)表示之化合物之反應,可與前述以式(7)與式(8)表示之化合物之反應同樣的條件進行反應。
又,反應所使用之以式(9)及式(10)表示之化合物的比例,以莫耳比表示,式(9):式(10)為3:1~1:3,較佳為3:2~2:3。
以式(9)與式(10)表示之化合物的反應係式(10)之化合物之2個反應部位(N-H部分或O-H部分)分別與另外式(9)之化合物的環氧環部分之間產生環氧開環反應。結果生成具有以式(1)表示之重複單位結構的聚合物。聚合物係由以式(1)表示之重複單位結構之重複所構成。
具有以前述式(1)表示之重複單位結構之聚合物之製造所使用之式(9)表示之化合物的具體例,例如有前述式(8)之具體例中之二縮水甘油基乙內醯脲化合物及二縮水甘油基巴比妥酸化合物。又,例如有單烯丙基二縮水甘油基異三聚氰酸、單乙基二縮水甘油基異三聚氰酸、
單丙基二縮水甘油基異三聚氰酸、單異丙基二縮水甘油基異三聚氰酸、單苯基二縮水甘油基異三聚氰酸、單溴二縮水甘油基異三聚氰酸及單甲基二縮水甘油基異三聚氰酸等之二縮水甘油基異三聚氰酸化合物。
具有以式(1)表示之重複單位結構之聚合物之製造所使用之以式(10)表示之化合物的具體例,例如有前述式(7)之具體例中之乙內醯脲化合物及巴比妥酸化合物。又,例如有對苯二甲酸、間苯二甲酸、苯二甲酸、2,5-二甲基對苯二甲酸、2,5-二乙基對苯二甲酸、2,3,5,6-四氯對苯二甲酸、2,3,5,6-四溴對苯二甲酸、2-硝基對苯二甲酸、2,3,5,6-四氟對苯二甲酸、2,5-二羥基對苯二甲酸、2,6-二甲基對苯二甲酸、2,5-二氯對苯二甲酸、2,3-二氯間苯二甲酸、3-硝基間苯二甲酸、2-溴間苯二甲酸、2-羥基間苯二甲酸、3-羥基間苯二甲酸、2-甲氧基間苯二甲酸、5-苯基間苯二甲酸、3-硝基苯二甲酸、3,4,5,6-四氯苯二甲酸、4,5-二氯苯二甲酸、4-羥基苯二甲酸、4-硝基苯二甲酸、4-甲基苯二甲酸、3,4,5,6-四氟苯二甲酸、2,6-萘二羧酸、1,2-萘二羧酸、1,4-萘二羧酸、1,8-萘二羧酸、蒽-9,10-二羧酸、乙二醇、1,3-丙烷二羧酸、4-羥基苯甲酸及1,2,3,4-環丁烷四羧酸等的化合物。式(10)之化合物為四羧酸時,可為四羧酸二酐。
具有以式(1)表示之重複單位結構之聚合物之製造時,以式(9)及式(10)表示之化合物可分別使用僅一種或組合二種以上的化合物來使用。又,例如使用單烯丙
基二縮水甘油基異三聚氰酸作為式(9)的化合物,使用5,5-二乙基巴比妥酸作為式(10)的化合物,所得的聚合物係前述式(13)之重複單位結構所構成的聚合物。
又,例如使用單烯丙基二縮水甘油基異三聚氰酸作為式(9)的化合物,使用對苯二甲酸與5,5-二乙基巴比妥酸之兩種作為式(10)之化合物時,所得的聚合物係由式(13)之重複單位結構與式(24)之重複單位結構所構成的聚合物。
本發明之EUV微影用光阻下層膜形成組成物中,具有以式(1)表示之重複單位結構的聚合物可使用一種聚合物或使用組合二種以上的聚合物。
本發明之EUV微影用光阻下層膜形成組成物所含有之具有以式(1)表示之重複單位結構之聚合物的分子量,其重量平均分子量例如1000~200000,或例如3000~100000,或5000~20000。
本發明之EUV微影用光阻下層膜形成組成物可含有交聯性化合物。這種交聯性化合物無特別限定,較佳為使用具有至少2個交聯形成取代基的交聯性化合物。例如有具有羥甲基、甲氧基甲基等之交聯形成取代基的三聚氰胺系化合物或取代尿素系化合物。具體而言,甲氧基甲基化甘脲或甲氧基甲基化三聚氰胺等的化合物,例如有四甲氧基甲基甘脲、四丁氧基甲基甘脲或六甲氧基甲基甘脲。又,例如有四甲氧基甲基尿素、四丁氧基甲基尿素等的化合物。此等交聯性化合物可產生藉由自行縮合的交聯反應。
又,也可與具有以式(1)表示之重複單位結構之聚合物中之羥基產生交聯反應。藉由這種交聯反應所形成的反射防止膜變得堅固。此外也成為對於有機溶劑之溶解性較低的反射防止膜。交聯性化合物可僅使用一種或組合二種以上使用。
本發明之EUV微影用光阻下層膜形成組成物可含有酸化合物。酸化合物例如有p-甲苯磺酸、三氟甲磺酸、吡啶鎓-p-甲磺酸(methanesulfonic acid)等的磺酸化合物、水楊酸、磺基水楊酸、檸檬酸、苯甲酸及羥基苯甲酸等之羧酸化合物。又,酸化合物例如有2,4,4,6-四溴環己二烯酮(cyclohexadienones)、苯偶因甲苯磺酸鹽、2-硝基苄基甲苯磺酸鹽、p-三氟甲基苯磺酸-2,4-二硝基苄酯、苯基-雙(三氯甲基)-s-三嗪及N-羥基丁二醯亞胺(succinimide)三氟甲烷磺酸酯等藉由熱或光產生酸的酸產生劑。酸化合物例如有二苯基錪六氟磷酸鹽、二苯基錪三氟甲磺酸鹽、及雙(4-第三丁基苯基)錪三氟甲磺酸鹽等之錪鹽系酸產生劑及三苯基鋶六氟銻酸鹽、及三苯基鋶三氟甲磺酸鹽等之鋶鹽系酸產生劑。酸化合物較佳為使用磺酸化合物、錪鹽系酸產生劑、鋶鹽系酸產生劑。酸化合物可僅使用一種或組合二種以上使用。
本發明之EUV微影用光阻下層膜形成組成物含有具有以式(1)表示之重複單位結構的聚合物與交聯性化合物時,其含量係固形分中,具有以式(1)表示之重複單位結構的聚合物,例如50~99質量%,或60~90質量%。
此外,交聯性化合物之含量係固形分中,例如1~50質量%,或10~40質量%。
本發明之EUV微影用光阻下層膜形成組成物含有具有以式(1)表示之重複單位結構的聚合物、交聯性化合物及酸化合物時,其含量係在固形分中,具有以式(1)表示之重複單位結構的聚合物,例如50~99質量%,或60~90質量%。交聯性化合物之含量係在固形分中,例如0.5~40質量%,或0.5~35質量%。酸化合物之含量係在固形分中,例如0.1~10質量%,或0.1~5質量%。
本發明之EUV微影用光阻下層膜形成組成物,必要時可含有其他的聚合物、流變調整劑及界面活性劑等的任意成分。
其他的聚合物,例如有由加成聚合性的化合物所製造的聚合物。
丙烯酸酯化合物、甲基丙烯酸酯化合物、丙烯醯胺化合物、甲基丙烯醯胺化合物、乙烯基化合物、苯乙烯化合物、馬來醯亞胺化合物、馬來酸酐、丙烯腈等之由加成聚合性的化合物所製造的加成聚合聚合物。其他例如有聚酯、聚醯胺、聚醯亞胺、聚醯胺酸、聚碳酸酯、聚醚、酚醛、甲酚酚醛及萘酚酚醛等。使用其他的聚合物時,其使用量係在固形分中,例如0.1~40質量%。
流變調整劑例如有二甲基苯二甲酸酯、二乙基苯二甲酸酯、二異丁基苯二甲酸酯、二己基苯二甲酸酯、丁基異癸基苯二甲酸酯等苯二甲酸化合物、二正丁基己二酸酯、
二異丁基己二酸酯、二異辛基己二酸酯、辛基癸基己二酸酯等之己二酸化合物、二正丁基馬來酸酯、二乙基馬來酸酯、二壬基馬來酸酯等之馬來酸化合物、甲基油酸酯、丁基油酸酯、四氫糠基油酸酯等之油酸化合物及正丁基硬脂酸酯、甘油基硬脂酸酯等之硬脂酸化合物。使用流變調整劑時,其使用量係於固形分中,例如0.001~10質量%。
界面活性劑例如有聚氧化乙烯月桂醚、聚氧化乙烯硬脂醚、聚氧化乙烯鯨蠟醚、聚氧化乙烯油醚等之聚氧化乙烯烷醚類、聚氧化乙烯辛基酚醚、聚氧化乙烯壬基酚醚等之聚氧化乙烯烷基芳基醚類、聚氧化乙烯.聚氧化丙烯崁段共聚物類、山梨聚糖(Sorbitan)單月桂酸酯、山梨聚糖單棕櫚酸酯、山梨聚糖單硬脂酸酯、山梨聚糖單油酸酯、山梨聚糖三油酸酯、山梨聚糖三硬脂酸酯等之山梨聚糖脂肪酸酯類、聚氧化乙烯山梨聚糖單月桂酸酯、聚氧化乙烯山梨聚糖單棕櫚酸酯、聚氧化乙烯山梨聚糖單硬脂酸酯、聚氧化乙烯山梨聚糖三油酸酯、聚氧化乙烯山梨聚糖三硬脂酸酯等之聚氧化乙烯山梨聚糖脂肪酸酯等之非離子系界面活性劑;商品名為EF TOP、EF301、EF303、EF352((股)TOHKEM PRODUCTS製)、商品名為Megafac F171、F173、R-08、R-30(大日本油墨化學(股)製)、Fluorad FC430、FC431(住友3M(股)製)、商品名為Asahiguad AG710、Suflon S-382、SC101、SC102、SC103、SC104、SC105、SC106(旭玻璃(股)製)等之氟系界面活性劑及有機矽氧烷聚合物KP341(信越化學工業(股
)製)等。此等界面活性劑可單獨使用或2種以上組合使用。使用界面活性劑時,其使用量係於固形分中,例如0.0001~5質量%。
本發明之EUV微影用光阻下層膜形成組成物所使用的溶劑,只要是可溶解前述固形分的溶劑時,即無特別使用限定。這種溶劑例如有乙二醇單甲醚、乙二醇單***、甲基溶纖素乙酸酯、乙基溶纖素乙酸酯、二乙二醇單甲醚、二乙二醇單***、丙二醇、丙二醇單甲醚、丙二醇單甲醚乙酸酯、丙二醇丙醚乙酸酯、甲苯、二甲苯、甲基乙基甲酮、環戊酮、環己酮、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸乙酯、乙氧基乙酸乙酯、羥基乙酸乙酯、2-羥基-3-甲基丁酸甲酯、3-甲氧基丙酸甲酯、3-甲氧基丙酸乙酯、3-乙氧基丙酸乙酯、3-乙氧基丙酸甲酯、丙酮酸甲酯、丙酮酸乙酯、乙酸乙酯、乙酸丁酯、乳酸乙酯及乳酸丁酯等。此等溶劑可單獨使用或2種以上組合使用。此外也可混合丙二醇單丁醚、丙二醇單丁醚乙酸酯等之高沸點溶劑使用。
被塗佈於本發明之EUV微影用光阻下層膜之上層的EUV光阻,可使用負型或正型。例如由酸產生劑具有與藉由酸分解改變鹼溶解速度之基團之黏結劑所構成的化學放大型光阻、由鹼溶性可溶性黏結劑、酸產生劑與藉由酸分解改變光阻對鹼溶解速度之低分子化合物所構成的化學放大型光阻、由酸產生劑與具有藉由酸分解改變鹼溶解速度之基團之黏結劑與藉由酸分解改變光阻之鹼溶解速度之
低分子化合物所構成的化學放大型光阻、由具有藉由EUV分解改變鹼溶解速度之基團之黏結劑所構成的非化學放大型光阻、由具有藉由EUV切斷,改變鹼溶解速度之部位之黏結劑所構成的非化學放大型光阻等。
具有使用本發明之EUV微影用光阻下層膜形成組成物形成之光阻下層膜的正型光阻的顯影液,可使用例如氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、偏矽酸鈉、氨水等之無機鹼類、乙胺、n-丙胺等之第一胺類、二乙胺、二-n-丁胺等之第二胺類、三乙胺、甲基二乙胺等之第三胺類、二甲基乙醇胺、三乙醇胺等之醇胺類、四甲基氫氧化銨、四乙基氫氧化銨、膽鹼(Choline)等之第4級銨鹽、吡咯、哌啶等之環狀胺類等之鹼類的水溶液。又,上述鹼類的水溶液中可適量添加異丙醇等之醇類、非離子系等之界面活性劑使用。此等中,較佳的顯影液微第四級銨鹽,更佳為四甲基氫氧化銨及膽鹼。
本發明係將EUV微影用光阻下層膜形成組成物塗佈於基板上,藉由燒結形成EUV微影用光阻下層膜。燒結溫度例如130~250℃,較佳為180~220℃之範圍。所得之光阻下層膜的膜厚可設定例如1~30nm,較佳為1~20nm之範圍。
本發明係將EUV微影用光阻下層膜形成組成物塗佈於具有形成有轉印圖型之加工對象膜的基板上,經燒結形成EUV微影用光阻下層膜,其上被覆EUV微影用光阻,對於此EUV微影用光阻下層膜與被覆EUV微影用光阻的
基板照射EUV,經顯影藉由乾蝕刻,將圖像轉印至基板上,形成積體電路(Integrated Circuit)元件,製造半導體裝置。
使用本發明之EUV微影用光阻下層膜形成組成物的半導體裝置係具有於基板上,依序形成有轉印圖型之加工對象膜、光阻下層膜及光阻的構成。前述光阻下層膜係將含有具有以前述式(1)表示之重複單位結構的聚合物及溶劑的EUV微影用光阻下層膜形成組成物,塗佈於前述轉印圖型之加工對象膜,然後被加熱處理者。此光阻下層膜係藉由降低底部基板或EUV所造成之不良影響,形成直立形狀良好的光阻圖型,可得到充分之對EUV照射量的容許度。又,本光阻下層膜係相較於形成於上層之光阻膜,具有較高的乾蝕刻速度,藉由乾蝕刻步驟可容易將光阻圖型轉印至加工對象的底層膜。
將單烯丙基二縮水甘油基異三聚氰酸(四國化成工業(股)製)100g、5,5-二乙基巴比妥酸66.4g、及苄基三乙基氯化銨(ammonium chloride)4.1g溶解於丙二醇單甲醚682g後,於130℃下反應24小時,得到含有聚合物的溶液。所得之聚合物係以下述式表示,進行GPC分析,以標準聚苯乙烯換算,重量平均分子量為6800。
將單甲基二縮水甘油基異三聚氰酸(四國化成工業(股)製)12.00g、1,2,3,4-環丁烷四羧酸二酐9.32g、及苄基三乙基氯化銨0.54g溶解於丙二醇單甲醚87.44g後,於130℃下反應24小時,得到含有聚合物的溶液。所得之聚合物係以下述式表示,進行GPC分析,以標準聚苯乙烯換算,重量平均分子量為8000。
將四甲氧基甲基甘脲(日本Cytec Industries(股)製、商品名:POWDERLINK〔註冊商標〕1174)0.5g與5-磺基水楊酸0.05g與具有以上述合成例1所得之聚合物2g的溶液10g混合,溶解於丙二醇單甲醚35.4g、及丙二醇單甲醚乙酸酯18.6g作成溶液。然後,使用孔徑0.10μm之聚乙烯製微孔過濾器過濾,再以孔徑0.05μm之聚乙烯製微孔過濾器過濾,然後以上述比率的溶劑調製成固形分0.4質量%,調製光阻下層膜形成用組成物(溶液)。
將四甲氧基甲基甘脲(日本Cytec Industries(股)製、商品名:POWDERLINK〔註冊商標〕1174)0.5g與5-磺基水楊酸0.05g與具有以上述合成例2所得之聚合物2g的溶液10g混合,溶解於丙二醇單甲醚35.4g、及丙二醇單甲醚乙酸酯18.6g作成溶液。然後,使用孔徑0.10μm之聚乙烯製微孔過濾器過濾,再以孔徑0.05μm之聚乙烯製微孔過濾器過濾,然後以上述比率的溶劑調製成固形分0.4質量%,調製光阻下層膜形成用組成物(溶液)。
將本發明之實施例1~實施例2所調製的光阻下層膜形成組成物分別旋轉塗佈於矽晶圓上,以205℃加熱1分鐘,形成膜厚10nm的光阻下層膜。該光阻下層膜上旋轉塗佈EUV用光阻溶液(甲基丙烯酸酯樹脂系光阻),進
行加熱形成膜厚50nm的光阻膜,使用EUV曝光裝置(ASML公司製EUV-ADT),以NA=0.25、σ=0.5的條件進行曝光。曝光後,進行PEB(Post Exposure Bake:曝光後加熱),於冷硬板(Chilling Plate)上冷卻至室溫,進行顯影及清洗(rins)處理,形成光阻圖型。藉由可否形成30nm之線與間隙,由圖型上面觀察判定圖型之線邊緣粗糙度(LER)之大小進行評價。
比較例1為未形成光阻下層膜,矽基板使用施予HMDS(六甲基二矽胺烷)處理的基板,也同樣進行試驗。
本說明書係線與間隙之線圖型中,與基板垂直方向的截面為矩形形狀時,評價為“良好”,前述截面為錐體(taper)(梯形)或底部拉引形狀時,評價為“可”,因其中一方的圖型倒壞或解像不良無法形成線與間隙時,評價為“不可”。
LER之測定係使用Critical Dimension Scanning Electron Microscopy(CD-SEM),由上部二次元檢出圖型邊緣位置,將該位置之偏差以LER形態定量化。具體而言,使用以CD-SEM檢出的白頻寬(white Bandwidth),由圖型底部至上面之高度的70%之部位的線寬,測定400點,該值之3σ作為LER值。
又,使用膜厚20nm以上之光阻下層膜時,光阻圖型形成後之乾蝕刻步驟中,光阻膜厚較薄,因此在蝕刻下層膜的過程,光阻圖型受傷,引起光阻膜厚減少或成為頂圓
(top Rounding)形狀等的形狀不良,實際的基板加工時,目的線寬之圖型形成變得困難。
本發明係提供一種用於半導體裝置製造之EUV微影製程的EUV微影用光阻下層膜形成組成物,藉由降低組成物中之固形分濃度可形成薄膜,以使用此等組成物的EUV微影,可形成良好的光阻圖型。
Claims (11)
- 一種EUV微影用光阻下層膜形成組成物,其特徵係含有:具有以下式中式(1):
- 一種EUV微影用光阻下層膜形成組成物,其特徵係含有具有以式(1)表示之重複單位結構的聚合物、交聯性化合物及溶劑。
- 一種EUV微影用光阻下層膜形成組成物,其特徵係含有具有以式(1)表示之重複單位結構的聚合物、交聯性化合物、酸化合物及溶劑。
- 如申請專利範圍第1~3項中任一項之EUV微影用 光阻下層膜形成組成物,其中前述具有以式(1)表示之重複單位結構的聚合物為藉由式(7)表示之化合物與式(8)表示之化合物之反應所製造的聚合物,
- 如申請專利範圍第1~3項中任一項之EUV微影用光阻下層膜形成組成物,其中前述具有以式(1)表示之重複單位結構的聚合物為藉由式(9)表示之化合物與式(10)表示之化合物之反應所製造的聚合物,
- 如申請專利範圍第1~3項中任一項之EUV微影用光阻下層膜形成組成物,其中EUV微影用光阻下層膜形成組成物之固形分為0.001~1.0質量%。
- 如申請專利範圍第1~3項中任一項之EUV微影用光阻下層膜形成組成物,其中EUV微影用光阻下層膜形成組成物之固形分為0.001~0.49質量%。
- 一種EUV微影用光阻下層膜,其特徵係將如申請專利範圍第1~7項中任一項之EUV微影用光阻下層膜形成組成物塗佈於半導體基板上,藉由燒結而得。
- 如申請專利範圍第8項之EUV微影用光阻下層膜,其中上述光阻下層膜的膜厚為1nm~20nm。
- 一種半導體裝置之製造用之EUV光阻圖型的形成方法,其特徵係含有以下步驟:將如申請專利範圍第1~7項中任一項之EUV微影用光阻下層膜形成組成物塗佈於半導體基板上,經燒結形成EUV微影用光阻下層膜的步驟,該EUV微影用光阻下層膜上形成EUV光阻層的步驟,將EUV微影用光阻下層膜與以EUV光阻層被覆的半導體基板進行曝光的步驟,曝光後,將EUV光阻層進行顯影的步驟。
- 如申請專利範圍第10項之EUV光阻圖型的形成方法,其中上述光阻下層膜的膜厚為1nm~20nm。
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Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10113083B2 (en) * | 2013-08-08 | 2018-10-30 | Nissan Chemical Industries, Ltd. | Resist underlayer film-forming composition containing polymer which contains nitrogen-containing ring compound |
KR101788091B1 (ko) * | 2014-09-30 | 2017-11-15 | 삼성에스디아이 주식회사 | 중합체, 유기막 조성물, 유기막, 및 패턴형성방법 |
US9862668B2 (en) | 2014-11-24 | 2018-01-09 | Samsung Sdi Co., Ltd. | Monomer, polymer, organic layer composition, organic layer, and method of forming patterns |
TWI592760B (zh) * | 2014-12-30 | 2017-07-21 | 羅門哈斯電子材料韓國有限公司 | 與經外塗佈之光致抗蝕劑一起使用之塗層組合物 |
KR101798935B1 (ko) | 2015-04-10 | 2017-11-17 | 삼성에스디아이 주식회사 | 유기막 조성물, 유기막, 및 패턴형성방법 |
WO2016210386A1 (en) | 2015-06-25 | 2016-12-29 | Roswell Biotechnologies, Inc | Biomolecular sensors and methods |
CN108292098B (zh) | 2015-12-01 | 2022-06-17 | 日产化学工业株式会社 | 包含吲哚并咔唑酚醛清漆树脂的抗蚀剂下层膜形成用组合物 |
KR102653125B1 (ko) | 2016-01-13 | 2024-04-01 | 삼성전자주식회사 | 포토레지스트의 하부막 조성물 및 이를 이용한 패턴 형성 방법 |
WO2017132567A1 (en) | 2016-01-28 | 2017-08-03 | Roswell Biotechnologies, Inc. | Massively parallel dna sequencing apparatus |
US11624725B2 (en) | 2016-01-28 | 2023-04-11 | Roswell Blotechnologies, Inc. | Methods and apparatus for measuring analytes using polymerase in large scale molecular electronics sensor arrays |
EP3882616A1 (en) * | 2016-02-09 | 2021-09-22 | Roswell Biotechnologies, Inc | Electronic label-free dna and genome sequencing |
US10597767B2 (en) | 2016-02-22 | 2020-03-24 | Roswell Biotechnologies, Inc. | Nanoparticle fabrication |
US9829456B1 (en) | 2016-07-26 | 2017-11-28 | Roswell Biotechnologies, Inc. | Method of making a multi-electrode structure usable in molecular sensing devices |
CA3052062A1 (en) | 2017-01-10 | 2018-07-19 | Roswell Biotechnologies, Inc. | Methods and systems for dna data storage |
KR102601324B1 (ko) | 2017-01-19 | 2023-11-10 | 로스웰 바이오테크놀로지스 인코포레이티드 | 2차원 레이어 재료를 포함하는 솔리드 스테이트 시퀀싱 디바이스들 |
EP3615685A4 (en) | 2017-04-25 | 2021-01-20 | Roswell Biotechnologies, Inc | ENZYMATIC CIRCUITS FOR MOLECULAR SENSORS |
US10508296B2 (en) | 2017-04-25 | 2019-12-17 | Roswell Biotechnologies, Inc. | Enzymatic circuits for molecular sensors |
EP4023764A3 (en) | 2017-05-09 | 2022-09-21 | Roswell Biotechnologies, Inc. | Binding probe circuits for molecular sensors |
CN110945078B (zh) * | 2017-07-27 | 2023-03-31 | 日产化学株式会社 | 剥离层形成用组合物和剥离层 |
KR20200039795A (ko) | 2017-08-30 | 2020-04-16 | 로스웰 바이오테크놀로지스 인코포레이티드 | Dna 데이터 저장을 위한 진행성 효소 분자 전자 센서들 |
US11100404B2 (en) | 2017-10-10 | 2021-08-24 | Roswell Biotechnologies, Inc. | Methods, apparatus and systems for amplification-free DNA data storage |
KR20210013040A (ko) * | 2018-05-25 | 2021-02-03 | 닛산 가가쿠 가부시키가이샤 | 환식 카르보닐 화합물을 이용한 레지스트 하층막 형성 조성물 |
JP7459802B2 (ja) * | 2019-01-28 | 2024-04-02 | 日産化学株式会社 | スリットダイコート用剥離層形成用組成物及び剥離層 |
KR102348675B1 (ko) | 2019-03-06 | 2022-01-06 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법 |
KR20220112265A (ko) | 2019-12-04 | 2022-08-10 | 닛산 가가쿠 가부시키가이샤 | 레지스트 하층막 형성용 조성물 |
WO2021111976A1 (ja) * | 2019-12-04 | 2021-06-10 | 日産化学株式会社 | ポリマーの製造方法 |
KR102448568B1 (ko) | 2020-01-17 | 2022-09-27 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 |
KR102563290B1 (ko) | 2020-01-31 | 2023-08-02 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 |
CN118276405A (zh) * | 2021-01-27 | 2024-07-02 | 日产化学株式会社 | 包含酸二酐的反应产物的抗蚀剂下层膜形成用组合物 |
WO2022163676A1 (ja) * | 2021-01-27 | 2022-08-04 | 日産化学株式会社 | 多重結合を有する膜形成組成物 |
US20240184204A1 (en) | 2021-03-22 | 2024-06-06 | Nissan Chemical Corporation | Resist underlayer film-forming composition containing protected basic organic group |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW200606591A (en) * | 2004-04-09 | 2006-02-16 | Nissan Chemical Ind Ltd | Condensed polymer-containing anti-reflective coating for semiconductor |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW591341B (en) * | 2001-09-26 | 2004-06-11 | Shipley Co Llc | Coating compositions for use with an overcoated photoresist |
CN101160549B (zh) * | 2005-04-19 | 2012-10-10 | 日产化学工业株式会社 | 含有具有乙烯二羰基结构的聚合物的形成光刻用防反射膜的组合物 |
KR100732763B1 (ko) * | 2005-10-31 | 2007-06-27 | 주식회사 하이닉스반도체 | 유기 반사 방지막 중합체, 이를 포함하는 유기 반사 방지막조성물 및 이를 이용한 포토레지스트의 패턴 형성 방법 |
JP5267819B2 (ja) * | 2008-02-21 | 2013-08-21 | 日産化学工業株式会社 | レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法 |
WO2010041626A1 (ja) * | 2008-10-10 | 2010-04-15 | 日産化学工業株式会社 | フルオレンを含有する樹脂を含むリソグラフィー用レジスト下層膜形成組成物 |
WO2010122948A1 (ja) * | 2009-04-21 | 2010-10-28 | 日産化学工業株式会社 | Euvリソグラフィー用レジスト下層膜形成組成物 |
WO2011074494A1 (ja) * | 2009-12-14 | 2011-06-23 | 日産化学工業株式会社 | レジスト下層膜形成組成物 |
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