TWI553898B - Process to produce solar cells - Google Patents
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- TWI553898B TWI553898B TW103140757A TW103140757A TWI553898B TW I553898 B TWI553898 B TW I553898B TW 103140757 A TW103140757 A TW 103140757A TW 103140757 A TW103140757 A TW 103140757A TW I553898 B TWI553898 B TW I553898B
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- 238000000034 method Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims description 63
- 238000010438 heat treatment Methods 0.000 claims description 37
- 238000001465 metallisation Methods 0.000 claims description 31
- 238000005245 sintering Methods 0.000 claims description 24
- 238000001816 cooling Methods 0.000 claims description 22
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 238000002161 passivation Methods 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 3
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000006388 chemical passivation reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Description
本發明涉及一種太陽能電池生產方法。 The invention relates to a method of producing a solar cell.
當前太陽能電池結構中可能出現衰減，表現為太陽能電池性能或者效率的突然下降。通常情況下這種衰減出現在太陽能電池運行期間，其中工作參數比如入射光的光照強度和工作溫度，可能對衰減的出現存在重要影響。也就是說衰減在太陽能電池運行過程中產生。 Attenuation may occur in current solar cell structures, manifested by a sudden drop in solar cell performance or efficiency. Typically, this attenuation occurs during operation of the solar cell, where operating parameters such as the illumination intensity of the incident light and the operating temperature may have a significant impact on the occurrence of attenuation. That is to say, the attenuation is generated during the operation of the solar cell.
最近人們發現，由於光線照射在矽片內部形成的復合缺陷可能是太陽能電池衰減的原因。所以這種效應又被稱為光致衰減(LID-光致衰減)，其出現原因主要是在矽晶體中形成了硼氧復合體。可以根據已知方法通過在太陽能電池生產中使用硼和氧含量很低的矽晶片防止出現上述效應。 It has recently been discovered that composite defects formed by the illumination of light inside the cymbal may be responsible for the attenuation of the solar cell. Therefore, this effect is also called photoinduced attenuation (LID-photoinduced attenuation), which is mainly caused by the formation of a boron-oxygen complex in the germanium crystal. The above effects can be prevented by using a germanium wafer having a low boron content and a low oxygen content in the production of solar cells according to known methods.
但即使當太陽能電池由硼和氧含量降低的矽晶片生產時，仍然出現衰減效應，更準確地說，在太陽能電池設計中曾經出現並且繼續出現衰減效應，並且其程度無法根據上述硼氧效應進行解釋。除了期間已經為人們所知的硼-氧衰減效應(硼氧衰減或LID)之外還存在另外的衰減效應，比如通過2012年第二十七屆歐洲光伏會議暨展覽會(EUPVSEC)期間K.Ramspeck等人發表的文章「Light Induced Degradation of Rear Passicated mc-Si Solar Cells」(「背面鈍化多晶矽太陽能電池的光致衰減」)，就可以得出這一結論。該文章解釋說，採用表面鈍化PERC(PERC-鈍化發射極和背面電池)設計的多晶矽太陽能電池(mc-Si太陽能電池)，會產生一種無法通過以往硼-氧模型解釋的光致衰減。通過降低氧含量，多晶矽太陽能電池中的硼氧衰減效應相對較小。但是這裡出現了在程度上可能顯著超出已知硼氧衰減的衰減效應。上述文章指出：當光線照射強度為每平方米400瓦(W/m2)且電池溫度為75℃時，效率衰減值為5-6%(相對)。 But even when the solar cell is produced from a germanium wafer with reduced boron and oxygen content, the attenuation effect still occurs. More precisely, the attenuation effect has occurred and continues to occur in the design of the solar cell, and the degree cannot be performed according to the boron oxide effect described above. Explanation. In addition to the boron-oxygen decay effect (boron oxygen decay or LID) that has been known during the period, there are additional attenuation effects, such as through the twenty-seventh European PV Conference and Exhibition (EUPVSEC) in 2012. This conclusion can be drawn from the article "Light Induced Degradation of Rear Passicated mc-Si Solar Cells" by Ramspeck et al. ("Photoinduced Attenuation of Back Passivated Polycrystalline Solar Cells"). The article explains that polycrystalline tantalum solar cells (mc-Si solar cells) designed with surface passivated PERC (PERC-passivated emitter and backside cells) produce a photoinduced attenuation that cannot be explained by previous boron-oxygen models. By reducing the oxygen content, the boron oxide decay effect in polycrystalline germanium solar cells is relatively small. However, here there is an attenuation effect that may significantly exceed the known boron-oxygen decay. The above article indicates that when the light irradiation intensity is 400 watts per square meter (W/m 2 ) and the battery temperature is 75 ° C, the efficiency attenuation value is 5-6% (relative).
本發明的目的是提供一種太陽能電池生產方法，通過這種方法能夠以可靠方式生產後期衰減度較小或者根本不會出現後期衰減的太陽能電池。 SUMMARY OF THE INVENTION An object of the present invention is to provide a solar cell production method by which a solar cell having a lower degree of attenuation or no late decay at all can be produced in a reliable manner.
根據本發明，上述目的通過權利要求所描述的太陽能電池生產方法達到。本發明的優選方案在從屬權利要求中列出。 According to the invention, the above object is achieved by a solar cell production method as described in the claims. Preferred embodiments of the invention are listed in the dependent claims.
為了將這裡的重要衰減效應與被稱為光致衰減(LID)的衰減機理相區分，下文中將提到一種所謂的eLID。該名稱表示一種增強的光致衰減效應(eLID-增強的光致衰減)。儘管標準太陽能電池中也可能出現eLID，但是eLID主要出現在以多晶矽半導體為基礎的太陽能電池中，這種太陽能電池氧含量較少，因而具有較低的LID敏感性。新的太陽能電池設計方案表現出較高的eLID敏感性，比如PERC-太陽能電池或者其他採取表面鈍化措施的太陽能電池，尤其是那些通過鈍化層局部接觸的太陽能電池。 In order to distinguish the important attenuation effect here from the attenuation mechanism called photoinduced attenuation (LID), a so-called eLID will be mentioned hereinafter. This name represents an enhanced photoinduced attenuation effect (eLID-enhanced photoinduced attenuation). Although eLIDs may also appear in standard solar cells, eLIDs are mainly found in solar cells based on polycrystalline germanium semiconductors, which have lower oxygen content and thus lower LID sensitivity. The new solar cell design shows high eLID sensitivity, such as PERC-solar cells or other solar cells that use surface passivation, especially those that are partially contacted by a passivation layer.
本發明建立在以下認識的基礎上：太陽能電池對於上述衰減的敏感性，即太陽能電池的eLID敏感性，主要取決於太陽能電池生產過程 中的生產參數。發明人發現，衰減建立在與已知硼-氧衰減相區別的另一種衰減機理的基礎上。此外發明人成功設計了一種顯著降低甚至完全避免eLID敏感性的方法。 The invention is based on the recognition that the sensitivity of the solar cell to the above attenuation, ie the eLID sensitivity of the solar cell, depends mainly on the solar cell production process. Production parameters in . The inventors have found that the attenuation is based on another attenuation mechanism that is distinguished from known boron-oxygen decay. In addition, the inventors have successfully designed a method that significantly reduces or even completely avoids eLID sensitivity.
與LID敏感性類似，eLID敏感性極有可能導致生產的太陽能電池，經過陽光照射或者通電後產生衰減。雖然在概念LID或eLID中包含詞語「光(導)致」，但衰減也可由於通電(即在太陽能電池上施加一個電壓從而在導通方向產生電流)而出現。產生衰減所需要的光照強度或電流密度，取決於工作溫度、光照或通電時間以及太陽能電池的其他工作參數和生產參數。 Similar to LID sensitivity, eLID sensitivity is highly likely to result in the production of solar cells that are attenuated by sunlight or by energization. Although the term "light" is included in the concept LID or eLID, the attenuation may also occur due to energization (ie, applying a voltage to the solar cell to generate a current in the conduction direction). The light intensity or current density required to produce attenuation depends on the operating temperature, lighting or power-on time, and other operating parameters and production parameters of the solar cell.
本發明的主要觀點基於以下認識：燒結過程或燒結工序是影響太陽能電池eLID敏感性的一個重要因素。為了完成漿料金屬化，金屬化膏被塗覆在基體表面，並通過燒結基體由金屬化膏產生一個金屬化層。這個燒結工序極易導致將來的太陽能電池出現eLID敏感性。目前尚不清楚哪種效應導致eLID。LID的衰減機理以硼氧復合體形成為基礎，而在eLID中可能多種不同機理同時起作用。不過目前已經知道，燒結工序導致產生eLID敏感性的主要原因並不是基體承受的最高溫度，而是燒結期間基體所經歷溫度變化梯度。 The main idea of the present invention is based on the recognition that the sintering process or the sintering process is an important factor affecting the sensitivity of the solar cell eLID. To complete the slurry metallization, a metallization paste is applied to the surface of the substrate and a metallization layer is created from the metallization paste through the sintered substrate. This sintering process can easily lead to eLID sensitivity in future solar cells. It is not clear which effect leads to eLID. The attenuation mechanism of the LID is based on the formation of a boron-oxygen complex, and many different mechanisms may act simultaneously in the eLID. However, it is known at present that the main cause of the eLID sensitivity in the sintering process is not the maximum temperature that the substrate is subjected to, but the temperature gradient experienced by the substrate during sintering.
eLID本身表現為太陽能電池效率出現若干個百分點的下降，有時下降幅度至少達到3%、5%、7%、9%或更高。這種效率衰減通常伴隨載流子壽命的下降，下降幅度至少為一半甚至下降一個數量級。比如載流子壽命可能由幾百微秒縮短至幾十微秒。基體上的載流子壽命測量在基體接觸或金屬化之前進行。 eLID itself shows a certain percentage point drop in solar cell efficiency, sometimes at least 3%, 5%, 7%, 9% or higher. This efficiency decay is usually accompanied by a decrease in carrier lifetime, which is at least half or even an order of magnitude decrease. For example, the carrier lifetime may be shortened from a few hundred microseconds to tens of microseconds. Carrier lifetime measurements on the substrate are made prior to substrate contact or metallization.
基體所經歷燒結工序包含一個加熱階段和一個冷卻階段。在加熱階段，基體沿著一條溫度變化曲線被加熱到最高溫度。在接下來的冷卻階段，基體沿著溫度變化曲線從最高溫度冷卻降溫，最好降至加熱階段開始的初始溫度，或者冷卻至室溫或環境溫度。燒結期間基體的溫度變化曲線，在加熱階段和/或冷卻階段的最大斜率為每秒100開爾文(K/s)，這個斜率最好是70K/s、50K/s、40K/s或30K/s。在某些結構形式中採取以下做法可能具有優勢：加熱階段溫度變化曲線的最大斜率為100K/s、70K/s、50K/s、40K/s或30K/s，而冷卻階段溫度變化曲線採用與加熱階段不同的最大斜率，其值為100K/s、70K/s、50K/s、40K/s或30K/s。在這裡需要強調的是：上面所指為最大斜率絕對值(尤其是在斜率為負的冷卻階段)。通過將基體上溫度隨時間的變化值維持在某一規定值以內，按照相應生產工藝製造的太陽能電池可以顯著減小或完全避免eLID敏感性。如果(比如)基體在一個溫度變化的空間內移動，可以通過空間溫度的變化實現溫度隨時間的變化。尤其可以通過使基體穿越一個連續加熱爐完成整個燒結工序。 The sintering process experienced by the substrate comprises a heating phase and a cooling phase. During the heating phase, the substrate is heated to the highest temperature along a temperature profile. During the subsequent cooling phase, the substrate cools down from the highest temperature along the temperature profile, preferably to the initial temperature at which the heating phase begins, or to room temperature or ambient temperature. The temperature profile of the substrate during sintering, the maximum slope in the heating phase and / or cooling phase is 100 Kelvin per second (K / s), this slope is preferably 70K / s, 50K / s, 40K / s or 30K / s . It may be advantageous to take the following approach in some structural forms: the maximum slope of the temperature profile of the heating phase is 100K/s, 70K/s, 50K/s, 40K/s or 30K/s, while the temperature profile of the cooling phase is The maximum slope of the heating phase is 100K/s, 70K/s, 50K/s, 40K/s or 30K/s. What needs to be emphasized here is that the above is the absolute value of the maximum slope (especially in the cooling phase where the slope is negative). By maintaining the value of the temperature change over time on the substrate within a certain specified value, solar cells fabricated in accordance with the respective production processes can significantly reduce or completely avoid eLID sensitivity. If, for example, the substrate moves within a temperature-changing space, the temperature can be varied over time by changes in the spatial temperature. In particular, the entire sintering process can be carried out by passing the substrate through a continuous furnace.
根據本發明的一個優化設計，最高溫度高於400℃、450℃、500℃、600℃或700℃。燒結工序中採用較大的最高溫度值，可以使基體表面和所產生金屬層實現緊密結合。此外較高的最高溫度還可以使漿料金屬化生產參數範圍得到更好利用。比如可以採用以下設計：燒結工序中加熱階段和/或冷卻階段的基體溫度變化曲線包含一個或者多個平台，在平台位置溫度隨時間的變化梯度幾乎為零。但也可以不依賴所選擇最高溫度設計一個或者多個上述平台。 According to an optimized design of the invention, the maximum temperature is above 400 ° C, 450 ° C, 500 ° C, 600 ° C or 700 ° C. The use of a large maximum temperature value in the sintering process enables a tight bond between the surface of the substrate and the resulting metal layer. In addition, the higher maximum temperature allows for better utilization of the range of slurry metallization production parameters. For example, the following design can be used: the temperature profile of the substrate during the heating phase and/or the cooling phase of the sintering process comprises one or more platforms, and the temperature gradient over time at the platform position is almost zero. However, it is also possible to design one or more of the above platforms independently of the selected maximum temperature.
太陽能電池的加熱可以借助於指向基體表面的熱能實現。 在本發明的一個優化設計中，加熱階段到達基體的加熱能量不超過以下最大功率密度：每平方厘米30瓦(30W/cm2)、25W/cm2、20W/cm2或15W/cm2。借助這種加熱能量限制措施，可以確保基體溫度變化曲線斜率不超過要求值或規定值。 Heating of the solar cell can be achieved by means of thermal energy directed to the surface of the substrate. In an optimized design of the invention, the heating energy of the heating stage to the substrate does not exceed the following maximum power density: 30 watts per square centimeter (30 W/cm 2 ), 25 W/cm 2 , 20 W/cm 2 or 15 W/cm 2 . With this heating energy limiting measure, it is ensured that the slope of the substrate temperature profile does not exceed the required or specified value.
在本發明的一個優選方案中，加熱階段對基體進行單面照射以便加熱基體。在這裡可以選擇從覆蓋金屬化膏的側面或者從與金屬化膏相對的側面照射基體，以便對基體進行加熱。當然在加熱階段加熱基體時，也可以從兩面對基體進行照射。為了僅從底面或者另外從底面照射基體，可以將基體佈置在一個輸送裝置上，這個輸送裝置僅固定基體的邊緣區域。 In a preferred embodiment of the invention, the substrate is subjected to a single-sided illumination to heat the substrate during the heating phase. Here, it is optional to illuminate the substrate from the side covering the metallization paste or from the side opposite the metallization paste. Of course, when the substrate is heated during the heating phase, it is also possible to irradiate from both facing substrates. In order to illuminate the substrate only from the bottom surface or from the bottom surface, the base body can be arranged on a conveying device which only fixes the edge regions of the basic body.
在一個合理結構形式中，基體的一面或兩面覆蓋有實現表面鈍化的鈍化層。這種鈍化層尤其可以設計在塗有金屬化膏以便產生漿料金屬化的基體表面上。在這種情況下可以在燒結工序之前或之後額外進行激光燒製接觸處理(LFC)。尤其可以使用氧化鋁、氮氧化鋁、氧化矽和/或氮化矽作為鈍化層。也可以使用多個相互重疊的鈍化層，比如一個實現化學鈍化的鈍化層和一個實現場效應鈍化的鈍化層。 In a reasonable configuration, one or both sides of the substrate are covered with a passivation layer that effects surface passivation. Such a passivation layer can in particular be designed on the surface of a substrate coated with a metallization paste to produce a slurry metallization. In this case, laser firing contact treatment (LFC) may be additionally performed before or after the sintering process. In particular, alumina, aluminum oxynitride, cerium oxide and/or cerium nitride can be used as the passivation layer. It is also possible to use a plurality of mutually overlapping passivation layers, such as a passivation layer for chemical passivation and a passivation layer for field effect passivation.
上述鈍化層適合作為背面鈍化層和/或正面鈍化層，尤其可以使用氧化鋁、氮氧化鋁層，和/或由氧化鋁、氮氧化鋁、氮氧化矽和/或氮化矽組成的重疊層作為背面鈍化層，而氮氧化矽或氮化矽層適合作為正面鈍化層和/或抗反射塗層。 The passivation layer described above is suitable as a back passivation layer and/or a front passivation layer, in particular an aluminum oxide, an aluminum oxynitride layer, and/or an overlapping layer composed of aluminum oxide, aluminum oxynitride, hafnium oxynitride and/or tantalum nitride. As the back passivation layer, a hafnium oxynitride or tantalum nitride layer is suitable as the front passivation layer and/or the anti-reflection coating.
燒結工序中可以在金屬化層下面構成一個背面場(Back Surface Field，BSF)，這種做法尤其適用於背面產生金屬化層的情況。在這 裡金屬漿料可以塗覆在基體的一面或兩面。背面漿料金屬化層可以基本覆蓋基體表面，而正面漿料金屬化層應按照某種結構形成(比如以金屬格柵的形式)。 In the sintering process, a back surface field (BSF) can be formed under the metallization layer, which is especially suitable for the case where a metallization layer is produced on the back side. At this The metal paste can be applied to one or both sides of the substrate. The backside paste metallization layer can substantially cover the surface of the substrate, while the front side paste metallization layer should be formed according to a structure (such as in the form of a metal grid).
在一個優化結構形式中，基體由單晶、聚晶或者多晶半導體構成。基體尤其可以通過矽製成。 In an optimized configuration, the substrate is composed of a single crystal, a polycrystalline or a polycrystalline semiconductor. The base body can in particular be made of tantalum.
1‧‧‧基體 1‧‧‧ base
11‧‧‧基體表面 11‧‧‧Base surface
2‧‧‧金屬化膏 2‧‧‧metallized paste
21‧‧‧金屬化層 21‧‧‧metallization
22‧‧‧背面場 22‧‧‧Back field
3‧‧‧連續式加熱爐 3‧‧‧Continuous heating furnace
30‧‧‧入口區域 30‧‧‧ Entrance area
31‧‧‧第一溫度範圍 31‧‧‧First temperature range
32‧‧‧第二溫度範圍 32‧‧‧second temperature range
33‧‧‧第三溫度範圍 33‧‧‧ third temperature range
34‧‧‧出口區域 34‧‧‧Export area
41‧‧‧第一條溫度變化曲線 41‧‧‧First temperature curve
42‧‧‧第二條溫度變化曲線 42‧‧‧Second temperature curve
51‧‧‧防止eLID的溫度變化曲線 51‧‧‧Preventing the temperature curve of eLID
51a‧‧‧加熱階段 51a‧‧‧heating stage
51b‧‧‧冷卻階段 51b‧‧‧cooling phase
52‧‧‧另一條防止eLID的溫度變化曲線 52‧‧‧Another temperature profile to prevent eLID
52a‧‧‧另一個加熱階段 52a‧‧‧ another heating stage
52b‧‧‧另一個冷卻階段 52b‧‧‧ another cooling phase
下面參照附圖通過實施例闡述本發明，其中：圖1a)至e)是用於解釋太陽能電池生產工藝步驟的示意圖；和圖2是用於表述不同燒結工序中溫度變化曲線的圖表。 The invention will now be described by way of examples with reference to the accompanying drawings in which: Figures 1a) to e) are schematic diagrams for explaining the steps of the solar cell production process; and Figure 2 is a chart for describing the temperature change curves in different sintering processes.
圖1a)至1e)示出了太陽能電池生產過程中的各個步驟。借助這些示意圖尤其可以闡明漿料金屬化過程。首先要按圖1a)所示提供帶有基體表面11的基體1。接下來如圖1b)所示，上述基體表面11覆蓋一層金屬化膏2。接著單面塗覆金屬化膏2的基體1穿過一個執行燒結工序的連續式加熱爐3。 Figures 1 a) to 1 e) show the various steps in the production process of a solar cell. The slurry metallization process can be clarified in particular by means of these schematics. The substrate 1 with the substrate surface 11 is first provided as shown in Figure 1 a). Next, as shown in Fig. 1b), the above-mentioned substrate surface 11 is covered with a layer of metallization paste 2. Next, the substrate 1 coated with the metallized paste 2 on one side is passed through a continuous heating furnace 3 which performs a sintering process.
簡單地看，圖中所示連續式加熱爐3具有三個溫度範圍31、32、33。基體1在一個入口區域30進入連續式加熱爐3，並在經過全部三個溫度範圍31、32、33後通過一個出口區域34離開連續式加熱爐。基體1在第一溫度範圍31被加熱。也就是說基體經歷一個溫度變化曲線的加熱階段。在第二溫度範圍32，基體1達到最高溫度。最後當基體1在連續式加熱爐3中穿過第三溫度範圍33時，經歷一個溫度變化曲線的冷卻階段。 Briefly, the continuous furnace 3 shown in the figures has three temperature ranges 31, 32, 33. The substrate 1 enters the continuous furnace 3 in an inlet region 30 and exits the continuous furnace through an outlet region 34 after passing through all three temperature ranges 31, 32, 33. The base body 1 is heated in the first temperature range 31. This means that the substrate undergoes a heating phase of a temperature profile. In the second temperature range 32, the substrate 1 reaches the maximum temperature. Finally, when the substrate 1 passes through the third temperature range 33 in the continuous heating furnace 3, it undergoes a cooling phase of a temperature profile.
圖1c)展示了基體1進入連續式加熱爐3和經過溫度範圍 31的情況。然後基體1位於第二溫度範圍32，如圖1d)所示。在這裡基體達到溫度變化曲線中的最高溫度。如圖1d)所示，在基體1中的金屬化膏2或金屬漿料下面，因金屬化膏2中材料的擴散形成了一個背面場22，這個背面場既可用於太陽能電池的接觸，又可用於其表面11的鈍化。此外通過燒結工序，從金屬化膏2中產生出一個金屬化層21。 Figure 1c) shows the entry of the substrate 1 into the continuous furnace 3 and the temperature range The situation of 31. The substrate 1 is then placed in a second temperature range 32, as shown in Figure 1d). Here the substrate reaches the highest temperature in the temperature profile. As shown in Fig. 1d), under the metallization paste 2 or metal paste in the substrate 1, a back surface field 22 is formed due to the diffusion of the material in the metallization paste 2, and this back surface field can be used for the contact of the solar cell, and It can be used for passivation of its surface 11. Further, a metallization layer 21 is produced from the metallization paste 2 by a sintering process.
接下來如圖1e)所示，基體1穿過第三溫度範圍並冷卻，以便通過出口區域34離開連續式加熱爐3。 Next, as shown in FIG. 1 e), the substrate 1 passes through a third temperature range and is cooled to exit the continuous furnace 3 through the outlet region 34.
圖2展示了一個包含四個不同溫度變化曲線41、42、51、52的圖表。它們都是一個燒結工序的溫度變化曲線，該燒結工序的目的是通過金屬化膏2在基體表面11上產生金屬化層21。圖表中沿著X軸繪製了時間，單位為秒(s)；沿著y軸繪製了溫度，單位為℃。第一條溫度變化曲線41和第二條溫度變化曲線42屬於溫度梯度較高的燒結過程(根據不同結構形式)中所採用溫度變化曲線。兩條溫度變化曲線41、42加熱階段的最大斜率約為60K/s。第一條溫度變化曲線41的最高溫度為550℃，而第二溫度變化曲線42的最高溫度約為600℃。第一條溫度變化曲線41冷卻階段的最大斜率約為-26K/s，而第二條溫度變化曲線42冷卻階段的最大斜率約為-33K/s。也就是說基體1在第二溫度變化曲線42中的冷卻速度快於溫度變化曲線41，或者說在採用第二溫度變化曲線時，基體在冷卻階段的溫度變化梯度較大。 Figure 2 shows a graph containing four different temperature profiles 41, 42, 51, 52. They are all temperature profiles of a sintering process, the purpose of which is to produce a metallization layer 21 on the substrate surface 11 by means of a metallization paste 2. The time is plotted along the X axis in seconds (s); the temperature is plotted along the y axis in °C. The first temperature change curve 41 and the second temperature change curve 42 belong to the temperature change curve used in the sintering process with a higher temperature gradient (according to different structural forms). The maximum slope of the heating phase of the two temperature profiles 41, 42 is about 60 K/s. The first temperature change curve 41 has a maximum temperature of 550 ° C, and the second temperature change curve 42 has a maximum temperature of about 600 ° C. The maximum slope of the cooling phase of the first temperature profile 41 is about -26 K/s, while the maximum slope of the cooling phase of the second temperature profile 42 is about -33 K/s. That is to say, the cooling rate of the substrate 1 in the second temperature profile 42 is faster than the temperature profile 41, or the temperature gradient of the substrate during the cooling phase is greater when the second temperature profile is used.
兩條溫度變化曲線41、42滿足加熱階段和冷卻階段最大斜率不超過100K/s的要求。其中所生產太陽能電池的eLID敏感性有輕微下降。不過為了確保生產的太陽能電池不出現eLID，溫度變化曲線的最大斜 率應取更小值。這就意味著，在燒結工序中基體被更加緩慢地加熱和/或冷卻。 The two temperature profiles 41, 42 meet the requirements for a maximum slope of the heating phase and the cooling phase not exceeding 100 K/s. The eLID sensitivity of the solar cells produced therein has slightly decreased. However, in order to ensure that the production of solar cells does not appear eLID, the maximum slope of the temperature curve The rate should be smaller. This means that the substrate is heated and/or cooled more slowly during the sintering process.
圖2所示另外兩條溫度變化曲線51、52，在eLID敏感性方面明顯更有優勢。圖中展示了一條防止eLID的溫度變化曲線51和另一條防止eLID的溫度變化曲線52。第一條防止eLID的溫度變化曲線51，包含一個最大梯度或者最大斜率為25K/s的加熱階段51a和一個最大斜率為-30K/s的冷卻階段51b。防止eLID的溫度變化曲線51所達到最高溫度為600℃。在未接觸基體(這些基體經歷上述溫度變化曲線)上進行的載流子壽命測量表明，即使在高溫條件下經過長時間照射，也不會出現eLID徵兆。也就是說這樣生產的太陽能電池不容易出現eLID。 The other two temperature profiles 51, 52 shown in Figure 2 are significantly more advantageous in terms of eLID sensitivity. The figure shows a temperature change curve 51 for preventing eLID and another temperature change curve 52 for preventing eLID. The first temperature change curve 51 for preventing the eLID includes a maximum gradient or a heating phase 51a having a maximum slope of 25 K/s and a cooling phase 51b having a maximum slope of -30 K/s. The maximum temperature reached by the temperature change curve 51 of the eLID is prevented from being 600 °C. Carrier lifetime measurements performed on uncontacted substrates (these substrates undergo the above temperature profile) show that eLID signs do not occur even after prolonged exposure to high temperatures. That is to say, the solar cells thus produced are not prone to eLID.
圖2所示另一條防止eLID的溫度變化曲線52至少在加熱階段具有更小的最大斜率。這條溫度變化曲線具有最大斜率為16K/s的加熱階段52a和最大斜率為-39K/s的冷卻階段52b。經歷這一條防止eLID的溫度變化曲線52時，基體1所達到最高溫度為700℃。也就是說，加熱階段52a的最大斜率顯著小於加熱階段51a的最大斜率。但是因為冷卻階段52b的最大斜率顯著高於30K/s，採用這種方式生產的太陽能電池儘管eLID敏感性很小，還是略微高於燒結工序中採用防eLID溫度變化曲線51的太陽能電池。這一點也可通過未接觸基體上的載流子壽命測量(經過相應照射後)予以證實。 Another temperature profile 52 that prevents the eLID shown in Figure 2 has a smaller maximum slope at least during the heating phase. This temperature profile has a heating phase 52a with a maximum slope of 16 K/s and a cooling phase 52b with a maximum slope of -39 K/s. When this temperature profile 52 for preventing eLID is experienced, the maximum temperature reached by the substrate 1 is 700 °C. That is, the maximum slope of the heating phase 52a is significantly less than the maximum slope of the heating phase 51a. However, since the maximum slope of the cooling stage 52b is significantly higher than 30 K/s, the solar cell produced in this manner is slightly higher than the solar cell using the anti-eLID temperature profile 51 in the sintering process, although the eLID sensitivity is small. This can also be confirmed by carrier lifetime measurements on uncontacted substrates (after corresponding exposure).
41‧‧‧第一條溫度變化曲線 41‧‧‧First temperature curve
42‧‧‧第二條溫度變化曲線 42‧‧‧Second temperature curve
51‧‧‧防止eLID的溫度變化曲線 51‧‧‧Preventing the temperature curve of eLID
51a‧‧‧加熱階段 51a‧‧‧heating stage
51b‧‧‧冷卻階段 51b‧‧‧cooling phase
52‧‧‧另一條防止eLID的溫度變化曲線 52‧‧‧Another temperature profile to prevent eLID
52a‧‧‧另一個加熱階段 52a‧‧‧ another heating stage
52b‧‧‧另一個冷卻階段 52b‧‧‧ another cooling phase
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200914633A (en) * | 2007-09-11 | 2009-04-01 | Centrotherm Photovoltaics Ag | Method and apparatus for thermally converting metallic precursor layers into semiconductor layers, and also solar module |
| TW201121090A (en) * | 2009-11-18 | 2011-06-16 | Centrotherm Photovoltaics Ag | Method and device for producing a compound semiconductor layer |
| TW201133904A (en) * | 2009-09-11 | 2011-10-01 | Stion Corp | Rapid thermal method and device for thin film tandem cell |
| CN102217088A (en) * | 2008-11-18 | 2011-10-12 | Sscp株式会社 | Method for manufacturing electrode for solar cell, substrate for solar cell manufactured by the same, and solar cell manufactured by the same |
| TW201306095A (en) * | 2011-07-19 | 2013-02-01 | Hitachi Chemical Co Ltd | Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5698451A (en) * | 1988-06-10 | 1997-12-16 | Mobil Solar Energy Corporation | Method of fabricating contacts for solar cells |
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| CN102217088A (en) * | 2008-11-18 | 2011-10-12 | Sscp株式会社 | Method for manufacturing electrode for solar cell, substrate for solar cell manufactured by the same, and solar cell manufactured by the same |
| TW201133904A (en) * | 2009-09-11 | 2011-10-01 | Stion Corp | Rapid thermal method and device for thin film tandem cell |
| TW201121090A (en) * | 2009-11-18 | 2011-06-16 | Centrotherm Photovoltaics Ag | Method and device for producing a compound semiconductor layer |
| TW201306095A (en) * | 2011-07-19 | 2013-02-01 | Hitachi Chemical Co Ltd | Composition for forming n-type diffusion layer, method for forming n-type diffusion layer, and method for producing photovoltaic cell |
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