CN109585606A - It is a kind of reduce p-type solar battery photo attenuation sintering method and application - Google Patents
It is a kind of reduce p-type solar battery photo attenuation sintering method and application Download PDFInfo
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- CN109585606A CN109585606A CN201811469684.4A CN201811469684A CN109585606A CN 109585606 A CN109585606 A CN 109585606A CN 201811469684 A CN201811469684 A CN 201811469684A CN 109585606 A CN109585606 A CN 109585606A
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- 238000005245 sintering Methods 0.000 title claims abstract description 105
- 238000000034 method Methods 0.000 title claims abstract description 53
- 238000001816 cooling Methods 0.000 claims abstract description 19
- 230000008569 process Effects 0.000 claims abstract description 13
- 238000007650 screen-printing Methods 0.000 claims abstract description 13
- 238000002360 preparation method Methods 0.000 claims description 10
- 230000005284 excitation Effects 0.000 claims description 9
- 229910004205 SiNX Inorganic materials 0.000 claims description 8
- 239000012528 membrane Substances 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 238000004140 cleaning Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- 238000007639 printing Methods 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052710 silicon Inorganic materials 0.000 abstract description 18
- 239000010703 silicon Substances 0.000 abstract description 18
- 239000013078 crystal Substances 0.000 abstract description 14
- 230000007547 defect Effects 0.000 abstract description 4
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000012546 transfer Methods 0.000 abstract description 4
- 239000002210 silicon-based material Substances 0.000 abstract description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 6
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 6
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1864—Annealing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention relates to a kind of sintering method for reducing p-type solar battery photo attenuation and applications, belong to technical field of solar batteries.A kind of sintering method reducing p-type solar battery photo attenuation, comprising: the cell piece after silk-screen printing is dried, is sintered, after quickly reaching sintering peak temperature, cooling sintering is carried out with the rate of temperature fall of 5~40K/s, is finally cooled down.This method extends the temperature fall time of sintering process, reduces the rate of temperature fall of sintering process, reduces the defects of crystal silicon material quantity, to reduce light decay amplitude.Crystal silicon solar battery is in 70 DEG C, 800W/m2Light decay handles the efficiency attenuation rate after 45h from conventional 6.5% or so, is reduced to 2.2% or so, while guaranteeing that transfer efficiency will not reduce by a relatively large margin reduce efficiency attenuation rate, and without increasing production process, it is easy to accomplish, be suitable for large-scale production.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of reduction p-type solar battery photo attenuation
Sintering method and application.
Background technique
The photo attenuation problem of p-type crystal silicon solar batteries is always the research emphasis in industry, earliest by Fischer etc.
People had found in 1973；Then Schmidt et al. propose solar cell will form after illumination by a displacement boron atom and
The B that two gap oxygen atoms are combined intosO2iComplex, BsO2iThe appearance of complex causes few son compound to make battery
Decaying；1989, Kimerling et al. thought that illumination can make B-Fe to decomposition, and the pollution of Fe also results in battery performance
Decaying；2012, Ramspeck et al. had found a kind of new light decay phenomenon on polycrystalline solar cell, this damped manner to by
Temperature dependency is larger and the compound volume defect of B-O or B-Fe cannot explain the relaxation phenomenon to decaying mechanism is decomposed well,
In its mechanism that decays currently is studied.In the recent period, correlative study is found, sintering procedure of processing is excitation crystal silicon solar battery light
The inducement of induced attenuation.
In recent years, have benefited from PERC solar battery and the good compatibility of conventional solar battery producing line, high efficiency etc.
Many advantages, the development of PERC solar battery technology are swift and violent.However the biggish problem one of another aspect polycrystalline PERC battery light decay
It is not well solved directly, this also restricts the development prospect of PERC technology.In order to inhibit photic the declining of p-type PERC battery
Reduction is answered, people have done many researchs, it was also proposed that compared with multi-method, is specifically included that and is mixed using mixing gallium silicon wafer and prepare as substrate
Gallium crystal silicon solar battery；N-type solar cell is prepared using the N-type silicon chip of p-doped；Illumination is carried out simultaneously certain to solar cell
At a temperature of carry out thermal annealing make boron oxygen complex occur regeneration state transformation.However since these methods are limited to technology or cost etc.
Reason never realizes extensive industrialization.
Summary of the invention
In view of the deficiencies of the prior art, the purpose of the present invention includes providing a kind of reduction p-type solar battery photo attenuation
Sintering method, this method is simple, it is easy to accomplish, without increasing cost, be suitable for large-scale production.
The purpose of the present invention further includes providing the sintering method of above-mentioned reduction p-type solar battery photo attenuation in preparation P
Application in type solar battery.
The present invention is solved its technical problem and is at least realized using following technical scheme.
The present invention proposes a kind of sintering method for reducing p-type solar battery photo attenuation, comprising:
Cell piece after silk-screen printing is dried, is sintered, after reaching sintering peak temperature, elongates sintering zone
Temperature-fall period carries out cooling sintering with the rate of temperature fall of 5~40K/s, is finally cooled down.
The invention proposes the sintering methods of above-mentioned reduction p-type solar battery photo attenuation in preparation p-type solar-electricity
Application in pond.
The beneficial effect comprise that
Method provided by the invention extends the temperature fall time of sintering process, reduces the cooling speed of sintering process
Rate reduces the defects of crystal silicon material quantity, to reduce light decay amplitude.Sintering method of the invention can be largely
The light decay effect for inhibiting p-type crystal silicon solar batteries, makes crystal silicon solar battery in 70 DEG C, 800W/m2Light decay handles the effect after 45h
Rate attenuation rate is reduced to 2.2% or so from conventional 6.5% or so, while guaranteeing that transfer efficiency will not reduce by a relatively large margin
Reduce efficiency attenuation rate, and without increasing production process, it is easy to accomplish, be suitable for large-scale production.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is 1 sintering curre of the embodiment of the present invention and normal sintering curve comparison figure；
Fig. 2 is EQE variation comparison diagram before and after 1 sintering curre of the embodiment of the present invention and normal sintering curve cell piece light decay；
Fig. 3 is the variation of 1 sintering curre of the embodiment of the present invention and normal sintering curve silicon chip minority carrier life with the light decay time；
Fig. 4 is the variation of 1 sintering curre of the embodiment of the present invention and normal sintering curve cell piece efficiency with the light decay time.
Specific embodiment
It in order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below will be in the embodiment of the present invention
Technical solution be clearly and completely described.The person that is not specified actual conditions in embodiment, according to normal conditions or manufacturer builds
The condition of view carries out.Reagents or instruments used without specified manufacturer is the conventional production that can be obtained by commercially available purchase
Product.
The sintering method to a kind of reduction p-type solar battery photo attenuation of the embodiment of the present invention and application carry out below
It illustrates.
The present invention provides a kind of sintering methods for reducing p-type solar battery photo attenuation, comprising:
Cell piece preparation: cell piece (silicon wafer) is after cleaning and texturing, phosphorus diffusion, wet etching, thermal oxide, using plated film
Equipment carries out back side AlOx-SiNxStack membrane and front SiNXThe preparation of film or individually front SiNXThe preparation of film；Plated film will be passed through
Cell piece carry out silk-screen printing, the printing including backplane back surface field and front gate line.It should be noted that if silicon chip back side plates
There is AlOx-SiNxStack membrane need to then increase by one of laser slotting process before silk-screen printing.
Sintering: the cell piece after silk-screen printing is placed on sintering crawler, with the speed of 200~260inch/min
Rate is conveyed, and is first dried in the baking zone that temperature is 260~300 DEG C, then the sintering that heats up in sintering zone, reaches sintering
After 740~790 DEG C of peak temperature, cooling sintering is carried out with the rate of temperature fall of 5~40K/s, is finally 80~100 DEG C in temperature
Cooling zone is cooled down.Rate of temperature fall in the embodiment of the present invention refer to from peak temperature be reduced to sintering excitation temperature 670~
680 DEG C of rate of temperature fall.Wherein, sintering excitation temperature can be 675 DEG C.
The embodiment of the present invention extends the temperature fall time of sintering process, reduces the rate of temperature fall of sintering process, subtracts
The defects of crystal silicon material quantity is lacked, to reduce light decay amplitude.
Further, in other embodiments in the cards of the invention, sintering peak temperature can be 750 DEG C, 760
℃,770℃.Rate of temperature fall can be 10~30K/s, or 15K/s, 20K/s, 25K/s, 35K/s.The drying of baking zone
Temperature can be 270 DEG C, 280 DEG C, 290 DEG C.The cooling temperature of cooling zone can be 85 DEG C, 90 DEG C, 95 DEG C.
Further, in other embodiments in the cards of the invention, during heating up sintering, burning can be increased
The heating rate in interface further decreases light decay amplitude, guarantees quantum efficiency in the absorption of long-wave band.
Sintering method of the invention can largely inhibit the light decay effect of p-type crystal silicon solar batteries, the crystal silicon sun
Battery is in 70 DEG C, 800W/m2Efficiency attenuation rate after light decay processing 45h is reduced to 2.2% or so from conventional 6.5% or so,
While guaranteeing that transfer efficiency will not reduce by a relatively large margin reduce efficiency attenuation rate, and without increasing production process, easily
In realization, it is suitable for large-scale production, can be applied to preparation p-type area of solar cell.
Feature and performance of the invention are described in further detail with reference to embodiments.
Embodiment 1
Present embodiments provide a kind of sintering method for reducing p-type solar battery photo attenuation, comprising:
Cell piece Jing Guo silk-screen printing is placed on the sintering crawler of sintering zone, with the rate of 200inch/min into
Row conveying.It is first dried in the baking zone that temperature is 260 DEG C, then the sintering that heats up in sintering zone, reaches sintering peak temperature
After 740 DEG C, cooling is carried out with the rate of temperature fall of 5K/s and sinters to 675 DEG C of excitation temperature of sintering, by cell piece in temperature after sintering
Cooling zone for 80 DEG C is cooled down.
Embodiment 2
Present embodiments provide a kind of sintering method for reducing p-type solar battery photo attenuation, comprising:
Cell piece Jing Guo silk-screen printing is placed on the sintering crawler of sintering zone, with the rate of 260inch/min into
Row conveying.It is first dried in the baking zone that temperature is 300 DEG C, then the sintering that heats up in sintering zone, reaches sintering peak temperature
After 790 DEG C, cooling is carried out with the rate of temperature fall of 40K/s and sinters to 675 DEG C of excitation temperature of sintering, by cell piece in temperature after sintering
Cooling zone for 100 DEG C is cooled down.
Embodiment 3
Present embodiments provide a kind of sintering method for reducing p-type solar battery photo attenuation, comprising:
Cell piece Jing Guo silk-screen printing is placed on the sintering crawler of sintering zone, with the rate of 230inch/min into
Row conveying.It is first dried in the baking zone that temperature is 280 DEG C, then the sintering that heats up in sintering zone, reaches sintering peak temperature
After 760 DEG C, cooling is carried out with the rate of temperature fall of 25K/s and sinters to 675 DEG C of excitation temperature of sintering, by cell piece in temperature after sintering
Cooling zone for 90 DEG C is cooled down.
Embodiment 4
Present embodiments provide a kind of sintering method for reducing p-type solar battery photo attenuation, comprising:
Cell piece Jing Guo silk-screen printing is placed on the sintering crawler of sintering zone, with the rate of 240inch/min into
Row conveying.It is first dried in the baking zone that temperature is 290 DEG C, then the sintering that heats up in sintering zone, reaches sintering peak temperature
After 780 DEG C, cooling is carried out with the rate of temperature fall of 30K/s and sinters to 675 DEG C of excitation temperature of sintering, by cell piece in temperature after sintering
Cooling zone for 80 DEG C is cooled down.
Embodiment 5
Present embodiments provide a kind of sintering method for reducing p-type solar battery photo attenuation, comprising:
Cell piece Jing Guo silk-screen printing is placed on the sintering crawler of sintering zone, with the rate of 250inch/min into
Row conveying.It is first dried in the baking zone that temperature is 270 DEG C, then the sintering that heats up in sintering zone, reaches sintering peak temperature
After 750 DEG C, cooling is carried out with the rate of temperature fall of 20K/s and sinters to 675 DEG C of excitation temperature of sintering, by cell piece in temperature after sintering
Cooling zone for 100 DEG C is cooled down.
Comparative example
This comparative example is sintered cell piece using common process.
After the sintering process sintering that Examples 1 to 5 and comparative example use, to P-type wafer before light decay and after 45h light decay
Service life piece efficiency carries out minority carrier lifetime, and is compared with common process, is as follows:
1 test result of table
As shown in Table 1, method provided in an embodiment of the present invention can reduce the attenuation rate in silicon wafer service life compared with common process,
Extend the service life of silicon wafer, wherein the attenuation rate in embodiment 1 is 23.56%.
The p-type crystal silicon solar batteries being sintered by the sintering method that Examples 1 to 5 and comparative example provide are chosen,
It has been carried out pair to p-type PERC crystal silicon solar battery transfer efficiency is tested before light decay and after 45h light decay, and with common process
Than being as follows:
2 test result of table
As shown in Table 2, comparative example is compared, the sintering method that Examples 1 to 5 provides can effectively reduce solar battery conversion
The attenuation rate of efficiency.Illustrate that sintering method provided by the invention is more scientific and reasonable, can largely inhibit the p-type crystal silicon sun
The light decay effect of energy battery.In conjunction with Fig. 1, Fig. 2, Fig. 3 and Fig. 4 it is found that the sintering method that uses of embodiment 1 is by solar battery
In 70 DEG C, 800W/m2Efficiency attenuation rate after light decay processing 45h is reduced to 2.2% or so from conventional 6.5% or so.
Embodiments described above is a part of the embodiment of the present invention, instead of all the embodiments.Reality of the invention
The detailed description for applying example is not intended to limit the range of claimed invention, but is merely representative of selected implementation of the invention
Example.Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts
Every other embodiment, shall fall within the protection scope of the present invention.
Claims (10)
1. a kind of sintering method for reducing p-type solar battery photo attenuation characterized by comprising silk-screen printing will be passed through
Cell piece afterwards is dried, is sintered, and after reaching sintering peak temperature, carries out cooling sintering with the rate of temperature fall of 5~40K/s,
The temperature-fall period for elongating sintering zone, is finally cooled down.
2. the sintering method according to claim 1 for reducing p-type solar battery photo attenuation, which is characterized in that described
Rate of temperature fall is 10~30K/s.
3. the sintering method according to claim 1 for reducing p-type solar battery photo attenuation, which is characterized in that described
Being sintered peak temperature is 740~790 DEG C.
4. the sintering method according to claim 3 for reducing p-type solar battery photo attenuation, which is characterized in that by institute
It states cell piece and 670~680 DEG C of excitation temperature of sintering is reduced to the rate of temperature fall from the peak temperature.
5. the sintering method according to claim 1 for reducing p-type solar battery photo attenuation, which is characterized in that described
The sintering crawler rate of sintering zone is 200~260inch/min.
6. the sintering method according to claim 1 for reducing p-type solar battery photo attenuation, which is characterized in that described
The temperature of drying is 260~300 DEG C.
7. the sintering method according to claim 1 for reducing p-type solar battery photo attenuation, which is characterized in that described
Cooling temperature is 80~100 DEG C.
8. the sintering method according to claim 1 for reducing p-type solar battery photo attenuation, which is characterized in that described
The preparation method of cell piece includes: the cell piece after cleaning and texturing, phosphorus diffusion, wet etching, thermal oxide, using plated film
Equipment carries out back side AlOx-SiNxStack membrane and front SiNXThe preparation of film or individually front SiNXThe preparation of film；
Silk-screen printing, the printing including backplane back surface field and front gate line are carried out to the cell piece by film.
9. the sintering method according to claim 8 for reducing p-type solar battery photo attenuation, which is characterized in that described
The cell piece back side is coated with the AlOx-SiNxWhen stack membrane, increase by one of laser slotting process before carrying out the silk-screen printing.
10. the sintering method as described in any one of claim 1 to 9 for reducing p-type solar battery photo attenuation is in preparation p-type
Application in solar battery.
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| CN111162143A (en) * | 2019-12-25 | 2020-05-15 | 广东爱旭科技有限公司 | High-efficiency PERC solar cell and preparation method thereof |
| CN113782641A (en) * | 2021-09-13 | 2021-12-10 | 浙江晶科能源有限公司 | Preparation process of solar cell |
| WO2022051012A1 (en) * | 2020-09-01 | 2022-03-10 | Illinois Tool Works Inc. | Sintering apparatus |
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| CN113782641A (en) * | 2021-09-13 | 2021-12-10 | 浙江晶科能源有限公司 | Preparation process of solar cell |
| CN113782641B (en) * | 2021-09-13 | 2024-01-30 | 浙江晶科能源有限公司 | Preparation process of solar cell |
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