TWI553731B - The method of etching the deep through hole - Google Patents
The method of etching the deep through hole Download PDFInfo
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- TWI553731B TWI553731B TW102139823A TW102139823A TWI553731B TW I553731 B TWI553731 B TW I553731B TW 102139823 A TW102139823 A TW 102139823A TW 102139823 A TW102139823 A TW 102139823A TW I553731 B TWI553731 B TW I553731B
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- 238000005530 etching Methods 0.000 title claims description 259
- 238000000034 method Methods 0.000 title claims description 69
- 238000000151 deposition Methods 0.000 claims description 63
- 230000008021 deposition Effects 0.000 claims description 61
- 230000008569 process Effects 0.000 claims description 36
- 229920000642 polymer Polymers 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 10
- 229910052732 germanium Inorganic materials 0.000 claims description 8
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 8
- 230000008859 change Effects 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 82
- 230000035484 reaction time Effects 0.000 description 7
- 235000012431 wafers Nutrition 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 230000003313 weakening effect Effects 0.000 description 5
- 125000004122 cyclic group Chemical group 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- RWRIWBAIICGTTQ-UHFFFAOYSA-N difluoromethane Chemical compound FCF RWRIWBAIICGTTQ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Drying Of Semiconductors (AREA)
Description
本發明係關於一種深矽通孔的蝕刻方法，特别是關於一種隨通孔深度增加而改進工藝參數的蝕刻方法。 The present invention relates to an etching method for deep boring vias, and more particularly to an etching method for improving process parameters as the depth of the via increases.
矽通孔技術(TSV)為第4代封裝技術，矽通孔技術(TSV，Through-Silicon-Via)是通過在晶片和晶片之間、晶圓和晶圓之間製作垂直導通，實現晶片之間互連的最新技術。與以往的IC封裝鍵合和使用凸點的疊加技術不同，TSV能夠使晶片在三維方向堆疊的密度最大，外形尺寸最小，並且大大改善晶片速度和低功耗的性能。 矽 through hole technology (TSV) is the fourth generation of packaging technology, TSV (Through-Silicon-Via) is achieved by making vertical conduction between the wafer and the wafer, between the wafer and the wafer. The latest technology for inter-interconnect. Unlike previous IC package bonding and bump overlay technology, TSV enables wafers to be stacked in the three-dimensional direction with the highest density, smallest form factor, and greatly improved wafer speed and low power consumption.
TSV製作技術中首先應該做到的是蝕刻機台對不同材料蝕刻輪廓的控制。儘管可以籠統地認為TSV應用需要製作相對高的縱寬比(Aspect Ratio)，而業界對矽的深蝕刻原理和應用並不陌生，但是，實際上TSV對蝕刻的要求還是在許多方面超過了MEMS等應用領域。比如，被蝕刻材料的複雜程度、不同的3D IC的應用中TSV通孔的分佈密度、尺寸(包括深度和直徑)相當寬泛的分佈等等。 The first thing that should be done in TSV fabrication technology is the control of the etching profile of different materials by the etching machine. Although TSV applications can be generally considered to require a relatively high aspect ratio, and the industry is no stranger to the deep etching principle and application of 矽, in fact, the TSV requirements for etching exceed MEMS in many respects. And other application areas. For example, the complexity of the material being etched, the distribution density of TSV vias, the size (including depth and diameter) of a wide range of 3D IC applications, and the like.
最佳的TSV技術必須能夠滿足輪廓控制(包括控制傾斜、斜差、側壁粗糙度、底切度等)，同時又需要在工藝能力上具備靈活性，能夠應對多種量級的通孔尺寸和各種多層材料，並具有高產量能力，能夠處理300mm晶圓，具有工藝的重複性、實 用性、可靠性，最後，還必須滿足IC市場所要求的最好的性價比。 The best TSV technology must be able to meet contour control (including control tilt, skew, sidewall roughness, undercut, etc.), while also requiring flexibility in process capability to handle multiple sizes of through-hole sizes and various Multi-layer material with high throughput capability, capable of handling 300mm wafers with process repeatability and realism Usability, reliability, and finally, must meet the best price/performance ratio required by the IC market.
中國專利公開號CN102031525A公開了一種深矽通孔的蝕刻方法，採用反應離子蝕刻的蝕刻步驟和聚合物沉積步驟，所述蝕刻步驟和聚合物沉積步驟交替進行，所述蝕刻步驟採用的氣體中包括用於化學反應等離子蝕刻矽的第一氣體和用於與矽反應形成矽化物保護膜的第二氣體。使用該方法蝕刻形成TSV時，具有蝕刻效率高、TSV通孔側壁光滑度好的特點。 Chinese Patent Publication No. CN102031525A discloses an etching method for deep boring through holes, an etching step of reactive ion etching and a polymer deposition step, which are alternately performed, and the gas used in the etching step includes A first gas for chemically etching the ruthenium and a second gas for reacting with ruthenium to form a ruthenium protective film. When the TSV is formed by etching using this method, it has the characteristics of high etching efficiency and good TSV through-hole side wall smoothness.
通常，在深蝕刻工藝中，採用蝕刻、沉積、蝕刻循環的工藝方法來進行深孔蝕刻。 Generally, in the deep etching process, a deep hole etching is performed by a process of etching, deposition, and etching cycles.
圖1示出現有技術的深矽通孔蝕刻過程的流程圖。如圖1所示，其中，11為掩膜層，12為襯底矽，13為聚合物層。圖1中顯示了在深孔蝕刻中蝕刻步驟、聚合物沉積步驟、蝕刻步驟相互交替最後蝕刻形成孔洞的過程。 Figure 1 shows a flow chart of a prior art deep via via etch process. As shown in FIG. 1, 11 is a mask layer, 12 is a substrate crucible, and 13 is a polymer layer. The process of etching, polymer deposition, and etching in alternating deep etching and forming holes in deep hole etching is shown in FIG.
圖2示出現有技術的深矽通孔蝕刻過程中，反應腔室內蝕刻氣體與聚合物氣體變化的時序圖。如圖2所示，主要採用SF6氣體來進行蝕刻步驟，採用C4F8氣體來進行沉積步驟。由於每次的蝕刻和沉積的工藝參數都相同，但是隨著孔深的增加，腔室內的其他工藝條件不變，氣體要達到深孔底部的距離增加，因此蝕刻速率會降低，不能達到工藝預期。而且，工藝要求的氣體反應時間通常很短，非常容易受到閥門時間誤差之類的影響，無法保證氣體反應時間的精確性。 2 is a timing diagram showing changes in etching gas and polymer gas in a reaction chamber during a deep boring etching process of the prior art. As shown in Fig. 2, the etching step is mainly carried out using SF 6 gas, and the deposition step is carried out using C 4 F 8 gas. Since the process parameters of each etching and deposition are the same, as the pore depth increases, the other process conditions in the chamber remain unchanged, and the distance from the gas to the bottom of the deep pore increases, so the etching rate is lowered, and the process expectation cannot be achieved. . Moreover, the gas reaction time required by the process is usually very short, and it is very susceptible to valve time error and the like, and the accuracy of the gas reaction time cannot be ensured.
針對現有技術中的缺陷，本發明的目的是提供一種深矽通孔的蝕刻方法，克服了現有技術的困難，通過控制閥門開閉時間來精確控制氣體反應時間，並且隨孔深增加而調節相應的蝕刻參數，以此來解決深孔蝕刻中隨孔深增加蝕刻速率減弱的問題。 In view of the defects in the prior art, the object of the present invention is to provide an etching method for deep through holes, which overcomes the difficulties of the prior art, precisely controls the gas reaction time by controlling the opening and closing time of the valve, and adjusts the corresponding depth as the hole depth increases. Etching parameters to solve the problem of increasing etching rate with deep hole depth in deep hole etching.
本發明為解決習知技術之問題所採用之技術手段系提供一種深矽通孔的蝕刻方法，包括以下步驟：在矽襯底上形成掩膜層，採用交替進行的蝕刻步驟和聚合物沉積步驟蝕刻深矽通孔，其中，蝕刻步驟中通過第一組管道通入蝕刻氣體，沉積步驟中通過第二組管道通入聚合物氣體，所述蝕刻步驟結束後，關閉第一組管道的閥門，間隔一時間段之後，打開第二組管道的閥門；或者所述沉積步驟結束後，關閉第二組管道的閥門，間隔所述時間段之後，打開第一組管道的閥門；在所述時間段內調整蝕刻步驟中的轟擊粒子的能量，所述蝕刻步驟中的轟擊粒子的能量隨矽通孔的深度增加而增強。 The technical means for solving the problems of the prior art provides an etching method for deep through holes, comprising the steps of forming a mask layer on a germanium substrate, using an alternating etching step and a polymer deposition step. Etching a deep via, wherein an etching gas is introduced through the first group of tubes in the etching step, and a polymer gas is introduced through the second group of tubes in the deposition step, and after the etching step is finished, the valves of the first group of tubes are closed. After a period of time interval, opening the valve of the second group of pipes; or after the deposition step is finished, closing the valves of the second group of pipes, after the time period, opening the valves of the first group of pipes; during the time period The energy of the bombarding particles in the etching step is adjusted internally, and the energy of the bombarding particles in the etching step is increased as the depth of the through hole increases.
優選地，所述蝕刻或者沉積步驟中的壓強、射頻功率以及蝕刻步驟的時間中的至少一項，隨矽通孔的深度增加而改變。 Preferably, at least one of the pressure in the etching or deposition step, the radio frequency power, and the time of the etching step changes as the depth of the through hole increases.
優選地，所述蝕刻或者沉積步驟中的壓強隨矽通孔的深度增加而減小，結束蝕刻時候的壓力比初始蝕刻時候的壓力減少5%至20%。 Preferably, the pressure in the etching or deposition step decreases as the depth of the via hole increases, and the pressure at the end of the etching is reduced by 5% to 20% compared to the pressure at the initial etching.
優選地，所述蝕刻或者沉積的射頻功率隨矽通孔的深度增加而增加，結束蝕刻時候的射頻功率比初始蝕刻時候的射頻功率增加10%至30%。 Preferably, the etched or deposited RF power increases as the depth of the via hole increases, and the RF power at the end of the etch increases by 10% to 30% compared to the RF power at the initial etch.
優選地，所述蝕刻步驟的時間隨矽通孔的深度增加而增加，蝕刻結束時候的蝕刻步驟的時間比初始蝕刻時候的蝕刻步驟時間增長5%至20%。 Preferably, the time of the etching step increases as the depth of the via hole increases, and the etching step at the end of the etching increases by 5% to 20% compared to the etching step time at the initial etching.
優選地，所述時間段為20毫秒至100毫秒。 Preferably, the period of time is from 20 milliseconds to 100 milliseconds.
優選地，所述時間段為第一組管道或者第二組管道的閥門開關時間。 Preferably, the period of time is a valve switching time of the first set of conduits or the second set of conduits.
優選地，所述時間段為第一組管道和第二組管道的閥門開關時間的平均值。 Preferably, the period of time is an average of valve switching times of the first set of conduits and the second set of conduits.
優選地，所述第一組管道通入的氣體包括SF6、NF3中的一種以及CO2、CO、NO、N2中的一種。 Preferably, the gas introduced by the first group of pipes includes one of SF 6 , NF 3 and one of CO 2 , CO, NO, N 2 .
優選地，所述第二組管道通入的氣體包括C4F8、C4F6、CHF3、CH2F2中的一種或任意幾種的組合。 Preferably, the gas introduced by the second group of pipes comprises one of C 4 F 8 , C 4 F 6 , CHF 3 , CH 2 F 2 or a combination of any of the following.
與現有技術相比，本發明的深矽通孔的蝕刻方法通過控制閥門開閉時間來精確控制氣體反應時間，並且隨孔深增加而調節相應的蝕刻參數，以此來解決深孔蝕刻中隨孔深增加蝕刻速率減弱的問題。每次蝕刻的通孔增加的深度都相同，且達到了預期的要求，沒有因為通孔深度的增加而減弱蝕刻速率，最後得到的蝕刻深孔完全滿足工藝要求。 Compared with the prior art, the deep hole through hole etching method of the present invention precisely controls the gas reaction time by controlling the valve opening and closing time, and adjusts the corresponding etching parameters as the hole depth increases, thereby solving the hole in the deep hole etching. Deeply increase the problem of weakening of the etching rate. Each of the etched vias is increased in depth to the same extent and meets the desired requirements. The etch rate is not attenuated by the increase in via depth, and the resulting etched deep wells fully meet the process requirements.
本發明所採用的具體實施例，將藉由以下之實施例及附呈圖式作進一步之說明。 The specific embodiments of the present invention will be further described by the following examples and the accompanying drawings.
11‧‧‧掩膜層 11‧‧‧ mask layer
12‧‧‧襯底矽 12‧‧‧Substrate
13‧‧‧聚合物層 13‧‧‧ polymer layer
△t‧‧‧時間段 △t‧‧‧ time period
通過閱讀參照以下附圖對非限制性實施例所作的詳細描述，本發明的其它特徵、目的和優點將會變得更明顯：圖1示出現有技術的深矽通孔蝕刻過程的流程圖；圖2示出現有技術的深矽通孔蝕刻過程中，反應腔室內蝕刻氣體與聚合物氣體變化的時序圖；圖3示出根據本發明的一個具體實施方式的，本發明的一種深矽通孔的蝕刻方法的流程圖；以及圖4示出根據本發明的一個具體實施方式的，本發明中的一種深矽通孔的蝕刻方法過程中，反應腔室內蝕刻氣體與聚合物氣體變化的時序圖。 Other features, objects, and advantages of the present invention will become more apparent from the detailed description of the accompanying drawings in the accompanying claims < 2 is a timing diagram showing changes in etching gas and polymer gas in a reaction chamber during a deep boring etching process of the prior art; FIG. 3 illustrates a deep pass of the present invention according to an embodiment of the present invention. A flow chart of an etching method of a hole; and FIG. 4 illustrates a timing of a change of an etching gas and a polymer gas in a reaction chamber during a etching method of a deep through hole in the present invention according to an embodiment of the present invention. Figure.
本領域技術人員理解，本領域技術人員結合現有技術以及上述實施例可以實現所述變化例，在此不予贅述。這樣的 變化例並不影響本發明的實質內容，在此不予贅述。 Those skilled in the art can understand that the variation can be implemented by those skilled in the art in combination with the prior art and the above embodiments, and details are not described herein. Such The variations do not affect the substance of the present invention and will not be described herein.
本發明提供了一種深矽通孔的蝕刻方法，在矽襯底上形成掩膜層，採用交替進行的蝕刻步驟和聚合物沉積步驟蝕刻深矽通孔，其中，蝕刻步驟中通過第一組管道通入蝕刻氣體，沉積步驟中通過第二組管道通入聚合物氣體，所述蝕刻步驟結束後，關閉第一組管道的閥門，間隔一時間段之後，打開第二組管道的閥門；或者所述沉積步驟結束後，關閉第二組管道的閥門，間隔所述時間段之後，打開第一組管道的閥門。本發明通過控制閥門開閉時間來精確控制氣體反應時間，以此避免閥門時間誤差之類的影響，保證氣體反應時間的精確性。 The present invention provides an etching method for deep via holes, forming a mask layer on a germanium substrate, etching the deep via holes by an alternating etching step and a polymer deposition step, wherein the first set of tubes is passed through the etching step An etching gas is introduced, and a polymer gas is introduced through the second group of pipes in the depositing step, after the etching step is finished, the valves of the first group of pipes are closed, and after a period of time, the valves of the second group of pipes are opened; After the deposition step is completed, the valves of the second group of pipes are closed, and after the period of time, the valves of the first group of pipes are opened. The invention precisely controls the gas reaction time by controlling the valve opening and closing time, thereby avoiding the influence of the valve time error and ensuring the accuracy of the gas reaction time.
為了進一步解決隨著孔深的增加，深孔底部的受蝕刻的情況會逐漸減弱，不能達到工藝預期的問題，本發明採用了隨孔深增加而調節相應的蝕刻參數的方式，具體表現為：所述蝕刻步驟中等離子體蝕刻的強度隨矽通孔的深度變化而變化。在所述時間段內調整蝕刻步驟中的轟擊粒子的能量，所述蝕刻步驟中的轟擊粒子的能量隨矽通孔的深度增加而增強。所述蝕刻或者沉積步驟中的壓強、射頻功率以及蝕刻步驟的時間中的至少一項，隨矽通孔的深度增加而改變。 In order to further solve the problem that the etching of the bottom of the deep hole will gradually weaken with the increase of the hole depth, and the problem expected by the process cannot be achieved, the present invention adopts a method of adjusting the corresponding etching parameter as the hole depth increases, and the specific performance is as follows: The intensity of the plasma etch in the etching step varies with the depth of the via hole. The energy of the bombarding particles in the etching step is adjusted during the period of time, and the energy of the bombarding particles in the etching step is increased as the depth of the through hole increases. At least one of the pressure in the etching or deposition step, the RF power, and the time of the etching step changes as the depth of the through hole increases.
所述蝕刻步驟中的轟擊粒子的能量隨矽通孔的深度增加而增強。在這個過程中，壓強隨矽通孔的深度增加而減小的方式可以是線性的，或是非線性的均可，根據實際蝕刻工藝的要求或是孔深變化對蝕刻速率的影響而定。 The energy of the bombardment particles in the etching step increases as the depth of the through hole increases. In this process, the pressure can be reduced as the depth of the via hole increases, either linearly or non-linearly, depending on the actual etching process requirements or the effect of hole depth variation on the etch rate.
所述蝕刻或者沉積步驟中的壓強隨矽通孔的深度增加而減小，結束蝕刻時候的壓力比初始蝕刻時候的壓力減少5%至20%。在這個過程中，壓強隨矽通孔的深度增加而減小的方式可以是線性的，或是非線性的均可，根據實際蝕刻工藝的要求或是孔深變化對蝕刻速率的影響而定。 The pressure in the etching or deposition step decreases as the depth of the via hole increases, and the pressure at the end of the etching is reduced by 5% to 20% compared to the pressure at the initial etching. In this process, the pressure can be reduced as the depth of the via hole increases, either linearly or non-linearly, depending on the actual etching process requirements or the effect of hole depth variation on the etch rate.
同樣地，蝕刻或者沉積的射頻功率隨矽通孔的深度 增加而增加，結束蝕刻時候的射頻功率比初始蝕刻時候的射頻功率增加10%至30%。在這個過程中，射頻功率隨矽通孔的深度增加而增加的方式可以是線性的，或是非線性的均可，根據實際蝕刻工藝的要求或是孔深變化對蝕刻速率的影響而定。 Similarly, the RF power etched or deposited depends on the depth of the through hole Increasing and increasing, the RF power at the end of the etching is increased by 10% to 30% compared to the RF power at the initial etching. In this process, the RF power can be increased linearly with the depth of the via hole, or it can be nonlinear, depending on the actual etching process requirements or the effect of the hole depth on the etch rate.
同樣地，蝕刻步驟的時間隨矽通孔的深度增加而增加，蝕刻結束時候的蝕刻步驟的時間比初始蝕刻時候的蝕刻步驟時間增長5%至20%。在這個過程中，蝕刻步驟的時間隨矽通孔的深度增加而增加的方式可以是線性的，或是非線性的均可，根據實際蝕刻工藝的要求或是孔深變化對蝕刻速率的影響而定。 Similarly, the time of the etching step increases as the depth of the via hole increases, and the etching step at the end of etching increases by 5% to 20% compared to the etching step time at the initial etching. In this process, the time of the etching step may increase linearly with the increase of the depth of the via hole, or may be nonlinear, depending on the actual etching process requirements or the influence of the hole depth variation on the etching rate. .
當然，實際使用中完全可以通過調整蝕刻壓強、射頻功率以及蝕刻步驟的時間中的兩項或是三項的方式來實現補償通孔深度增加對蝕刻速率的減弱。 Of course, in actual use, it is completely possible to compensate for the decrease in the etching rate by increasing the depth of the via hole by adjusting two or three of the etching pressure, the RF power, and the etching step time.
圖3示出根據本發明的一個具體實施方式的，本發明的一種深矽通孔的蝕刻方法的流程圖。如圖3所示，本發明實際使用中，包括以下步驟：(1)在矽襯底上形成掩膜層，採用交替進行的蝕刻步驟和聚合物沉積步驟蝕刻深矽通孔，其中，蝕刻步驟中通過第一組管道通入蝕刻氣體，沉積步驟中通過第二組管道通入聚合物氣體；(2)蝕刻步驟開始，打開第一組管道通入蝕刻氣體；(3)蝕刻步驟結束後，關閉第一組管道的閥門；(4)判斷蝕刻是否完成，若否，則執行步驟(5)，若是，則結束蝕刻；(5)間隔一時間段；(6)沉積步驟開始，打開第二組管道通入聚合物氣體；(7)沉積步驟結束後，關閉第二組管道的閥門；(8)間隔一時間段，返回步驟(2)。 3 is a flow chart showing a method of etching a deep via of the present invention in accordance with an embodiment of the present invention. As shown in FIG. 3, in actual use of the present invention, the method includes the following steps: (1) forming a mask layer on the germanium substrate, and etching the deep via via the alternating etching step and the polymer deposition step, wherein the etching step Passing an etching gas through the first group of pipes, and introducing a polymer gas through the second group of pipes in the deposition step; (2) starting the etching step, opening the first group of pipes to pass the etching gas; (3) after the etching step is finished, Closing the valve of the first group of pipes; (4) determining whether the etching is completed, if not, performing step (5), and if so, ending the etching; (5) spacing for a period of time; (6) starting the deposition step, opening the second The group of pipes is fed with polymer gas; (7) after the deposition step is completed, the valves of the second group of pipes are closed; (8) after a period of time, returning to step (2).
圖4示出根據本發明的一個具體實施方式的，本發明中的一種深矽通孔的蝕刻方法過程中，反應腔室內蝕刻氣體與 聚合物氣體變化的時序圖。如圖4所示，本發明的實際蝕刻過程中，通常將間隔的時間段△t的範圍定為20毫秒至100毫秒。具體的取值要考慮氣體閥門誤差、射頻功率、反應腔內部的壓力變化等多個工藝參數。通過改變蝕刻參數或調整開關延遲時間的精確控制，整個蝕刻過程的穩定性可顯著改善。 4 illustrates an etching process in a reaction chamber during a deep boring hole etching method according to an embodiment of the present invention. Timing diagram of polymer gas changes. As shown in FIG. 4, in the actual etching process of the present invention, the interval period Δt is usually set to be 20 milliseconds to 100 milliseconds. The specific values should consider several process parameters such as gas valve error, RF power, and pressure change inside the reaction chamber. By changing the etching parameters or adjusting the precise control of the switching delay time, the stability of the entire etching process can be significantly improved.
所述時間段可以定義為以下的時間值：比如：所述時間段為第一組管道或者第二組管道的閥門開關時間。或者，所述時間段為第一組管道和第二組管道的閥門開關時間的平均值。 The time period can be defined as the following time value: for example, the time period is the valve switching time of the first group of pipes or the second group of pipes. Alternatively, the period of time is an average of valve switching times of the first set of conduits and the second set of conduits.
本發明中的反應氣體與常規的蝕刻過程所用的氣體相同，比如：第一組管道通過蝕刻氣體，所述第一組管道通入的氣體包括SF6、NF3中的一種以及CO2、CO、NO、N2中的一種。第二組管道通過聚合物氣體，所述第二組管道通入的氣體包括C4F8、C4F6、CHF3、CH2F2中的一種或任意幾種的組合。當然，實際過程中，使用的蝕刻氣體或聚合物氣體不限於以上的舉例。 The reaction gas in the present invention is the same as the gas used in the conventional etching process, for example, the first group of pipes pass through the etching gas, and the gas introduced into the first group of pipes includes one of SF 6 and NF 3 and CO 2 and CO. One of NO, N 2 . The second set of conduits passes through the polymer gas, and the gases introduced by the second set of conduits comprise one or a combination of any of C 4 F 8 , C 4 F 6 , CHF 3 , CH 2 F 2 . Of course, the etching gas or polymer gas used in the actual process is not limited to the above examples.
實施例1 Example 1
本實施例中根據氣體閥門誤差、射頻功率、反應腔內部的壓力變化等多個工藝參數的得到的時間段△t為30毫秒，並且主要通過減小壓力的方式來補償通孔深度增加後的蝕刻速率減弱。 In this embodiment, the time period Δt obtained according to the gas valve error, the RF power, the pressure change inside the reaction chamber, and the like is 30 milliseconds, and the through hole depth is compensated mainly by reducing the pressure. The etch rate is reduced.
本發明提供了一種深矽通孔的蝕刻方法，在矽襯底上形成掩膜層，採用交替進行的蝕刻步驟和聚合物沉積步驟蝕刻深矽通孔，其中，蝕刻步驟中通過第一組管道通入蝕刻氣體，蝕刻氣體為SF6與CO2的氣體組合。沉積步驟中通過第二組管道通入聚合物氣體，聚合物氣體為C4F8與C4F6的氣體組合。 The present invention provides an etching method for deep via holes, forming a mask layer on a germanium substrate, etching the deep via holes by an alternating etching step and a polymer deposition step, wherein the first set of tubes is passed through the etching step An etching gas is introduced, and the etching gas is a gas combination of SF 6 and CO 2 . In the deposition step, a polymer gas is introduced through a second set of tubes, and the polymer gas is a combination of C 4 F 8 and C 4 F 6 gases.
第一次蝕刻時，將SF6與CO2的氣體組合通過第一組管道通入反應腔室內，反應腔室內壓強為120mT、蝕刻功率為2000W，蝕刻步驟的時間為2s。 During the first etching, the gas combination of SF 6 and CO 2 was introduced into the reaction chamber through the first group of tubes, the pressure in the reaction chamber was 120 mT, the etching power was 2000 W, and the etching step was 2 s.
2s後，第一次蝕刻結束，關閉第一組管道。 After 2 s, the first etching is completed and the first set of pipes is closed.
延時30毫秒之後再開始第一次沉積。 The first deposition was started after a delay of 30 milliseconds.
第一次沉積時，將C4F8與C4F6的氣體組合通過第二組管道通入反應腔室內。 At the first deposition, the gas combination of C 4 F 8 and C 4 F 6 is introduced into the reaction chamber through the second set of tubes.
第一次沉積結束後，關閉第二組管道。 After the first deposition is completed, the second set of pipes is closed.
延時30毫秒之後再開始第二次蝕刻。 The second etching is started after a delay of 30 milliseconds.
第二次蝕刻時，將SF6與CO2的氣體組合通過第一組管道通入反應腔室內，保持蝕刻頻率、蝕刻功率以及蝕刻步驟的時間不變，即蝕刻功率仍為2000W，蝕刻步驟的時間仍為2s，但需要將第一次的壓力減小1%，第二次蝕刻時反應腔室內壓強大約為119.8mT，以此修正孔深對蝕刻速率的影響。 During the second etching, the gas combination of SF 6 and CO 2 is introduced into the reaction chamber through the first group of tubes, and the etching frequency, the etching power, and the etching step time are kept constant, that is, the etching power is still 2000 W, and the etching step is performed. The time is still 2s, but the first pressure needs to be reduced by 1%. The pressure in the reaction chamber during the second etching is about 119.8mT, which corrects the influence of the hole depth on the etching rate.
2s後，第二次蝕刻結束，關閉第一組管道。 After 2 s, the second etch ends and the first set of tubes is closed.
延時30毫秒之後再開始第二次沉積。 A second deposition is started after a delay of 30 milliseconds.
第二次沉積時，將C4F8與C4F6的氣體組合通過第二組管道通入反應腔室內。 At the second deposition, a gas combination of C 4 F 8 and C 4 F 6 is introduced into the reaction chamber through a second set of tubes.
第二次沉積結束後，關閉第二組管道。 After the second deposition is completed, the second set of pipes is closed.
延時30毫秒之後再開始第三次沉積。 The third deposition was started after a delay of 30 milliseconds.
循環蝕刻、沉積、蝕刻的步驟直至達到蝕刻深度要求，每次蝕刻時，保持蝕刻頻率、蝕刻功率以及蝕刻步驟的時間不變，將上一次中的壓力減小1%。 The steps of cyclic etching, deposition, and etching are performed until the etching depth is required. The etching frequency, the etching power, and the etching step time are kept constant for each etching, and the pressure in the previous time is reduced by 1%.
由於採用了減小壓力的方式來補償通孔深度增加後的蝕刻速率減弱的方法，每次蝕刻的通孔增加的深度都相同，且達到了預期的要求，沒有因為通孔深度的增加而減弱蝕刻速率，最後得到的蝕刻深孔完全滿足工藝要求。 Since the method of reducing the pressure is used to compensate for the weakening of the etching rate after the increase of the via depth, the depth of the via hole per etching is increased to the same extent and the expected requirement is not obtained, which is not weakened by the increase of the via depth. The etch rate, and finally the etched deep hole completely meets the process requirements.
實施例2 Example 2
本實施例中根據氣體閥門誤差、射頻功率、反應腔內部的壓力變化等多個工藝參數的得到的時間段△t為70毫秒，並且主要通過提升蝕刻功率的方式來補償通孔深度增加後的蝕刻速率減弱。 In this embodiment, the time period Δt obtained according to the gas valve error, the RF power, the pressure change inside the reaction chamber, and the like is 70 milliseconds, and the through hole depth is compensated mainly by increasing the etching power. The etch rate is reduced.
本發明提供了一種深矽通孔的蝕刻方法，在矽襯底上形成掩膜層，採用交替進行的蝕刻步驟和聚合物沉積步驟蝕刻深矽通孔，其中，蝕刻步驟中通過第一組管道通入蝕刻氣體，蝕刻氣體為NF3與NO的氣體組合。沉積步驟中通過第二組管道通入聚合物氣體，聚合物氣體為C4F6、CHF3與CH2F2的氣體組合。 The present invention provides an etching method for deep via holes, forming a mask layer on a germanium substrate, etching the deep via holes by an alternating etching step and a polymer deposition step, wherein the first set of tubes is passed through the etching step An etching gas is introduced, and the etching gas is a gas combination of NF 3 and NO. In the deposition step, a polymer gas is introduced through a second set of tubes, and the polymer gas is a gas combination of C 4 F 6 , CHF 3 and CH 2 F 2 .
第一次蝕刻時，將NF3與NO的氣體組合通過第一組管道通入反應腔室內，反應腔室內壓強為120mT、蝕刻功率為2000W，蝕刻步驟的時間為2s。 During the first etching, the gas combination of NF 3 and NO was introduced into the reaction chamber through the first group of tubes, the pressure in the reaction chamber was 120 mT, the etching power was 2000 W, and the etching step was 2 s.
2s後，第一次蝕刻結束，關閉第一組管道。 After 2 s, the first etching is completed and the first set of pipes is closed.
延時70毫秒之後再開始第一次沉積。 The first deposition begins after a delay of 70 milliseconds.
第一次沉積時，將C4F6、CHF3與CH2F2的氣體組合通過第二組管道通入反應腔室內。 At the first deposition, a gas combination of C 4 F 6 , CHF 3 and CH 2 F2 is introduced into the reaction chamber through a second set of conduits.
第一次沉積結束後，關閉第二組管道。 After the first deposition is completed, the second set of pipes is closed.
延時70毫秒之後再開始第二次蝕刻。 The second etching is started after a delay of 70 milliseconds.
第二次蝕刻時，將NF3與NO的氣體組合通過第一組管道通入反應腔室內，保持壓強、蝕刻頻率以及蝕刻步驟的時間不變，即反應腔室內壓強仍為120mT，蝕刻步驟的時間仍為2s，但需要將第一次的蝕刻功率提升1%，第二次蝕刻時的蝕刻功率為2020W，以此修正孔深對蝕刻速率的影響。 During the second etching, the gas combination of NF 3 and NO is introduced into the reaction chamber through the first group of tubes, and the pressure, the etching frequency, and the etching step time are kept constant, that is, the pressure in the reaction chamber is still 120 mT, and the etching step is performed. The time is still 2 s, but the first etching power needs to be increased by 1%, and the etching power at the second etching is 2020 W, thereby correcting the influence of the hole depth on the etching rate.
2s後，第二次蝕刻結束，關閉第一組管道。 After 2 s, the second etch ends and the first set of tubes is closed.
延時70毫秒之後再開始第二次沉積。 A second deposition is initiated after a delay of 70 milliseconds.
第二次沉積時，將C4F6、CHF3與CH2F2的氣體組合通過第二組管道通入反應腔室內。 At the second deposition, a gas combination of C 4 F 6 , CHF 3 and CH 2 F 2 is introduced into the reaction chamber through a second set of conduits.
第二次沉積結束後，關閉第二組管道。 After the second deposition is completed, the second set of pipes is closed.
延時70毫秒之後再開始第三次蝕刻。 The third etching is started after a delay of 70 milliseconds.
循環蝕刻、沉積、蝕刻的步驟直至達到蝕刻深度要求，每次蝕刻時，保持壓強、蝕刻頻率以及蝕刻步驟的時間不變，將上一次的蝕刻功率提升1%。 The steps of cyclic etching, deposition, and etching are performed until the etching depth is required. The temperature, the etching frequency, and the etching step time are kept constant for each etching, and the previous etching power is increased by 1%.
由於採用了提升蝕刻功率的方式來補償通孔深度增加後的蝕刻速率減弱的方法，每次蝕刻的通孔增加的深度都相同，且達到了預期的要求，沒有因為通孔深度的增加而減弱蝕刻速率，最後得到的蝕刻深孔完全滿足工藝要求。 Since the method of increasing the etching power is used to compensate for the weakening of the etching rate after the increase of the via depth, the depth of the via hole per etching is increased to the same extent and the expected requirement is not obtained, which is not weakened by the increase of the via depth. The etch rate, and finally the etched deep hole completely meets the process requirements.
實施例3 Example 3
本實施例中根據氣體閥門誤差、射頻功率、反應腔內部的壓力變化等多個工藝參數的得到的時間段△t為50毫秒，並且主要通過增加蝕刻步驟的時間的方式來補償通孔深度增加後的蝕刻速率減弱。 In this embodiment, the obtained time period Δt according to the gas valve error, the RF power, the pressure change inside the reaction chamber, and the like is 50 milliseconds, and the through hole depth is increased mainly by increasing the time of the etching step. The subsequent etch rate is reduced.
本發明提供了一種深矽通孔的蝕刻方法，在矽襯底上形成掩膜層，採用交替進行的蝕刻步驟和聚合物沉積步驟蝕刻深矽通孔，其中，蝕刻步驟中通過第一組管道通入蝕刻氣體，蝕刻氣體為NF3與N2的氣體組合。沉積步驟中通過第二組管道通入聚合物氣體，聚合物氣體為CHF3與CH2F2的氣體組合。 The present invention provides an etching method for deep via holes, forming a mask layer on a germanium substrate, etching the deep via holes by an alternating etching step and a polymer deposition step, wherein the first set of tubes is passed through the etching step An etching gas is introduced, and the etching gas is a combination of NF 3 and N 2 gases. In the deposition step, a polymer gas is introduced through a second set of tubes, and the polymer gas is a gas combination of CHF 3 and CH 2 F 2 .
第一次蝕刻時，將NF3與NO的氣體組合通過第一組管道通入反應腔室內，反應腔室內壓強為120mT、蝕刻功率為2000W，蝕刻步驟的時間為2s。 During the first etching, the gas combination of NF3 and NO was introduced into the reaction chamber through the first group of tubes. The pressure in the reaction chamber was 120 mT, the etching power was 2000 W, and the etching step was 2 s.
2s後，第一次蝕刻結束，關閉第一組管道。 After 2 s, the first etching is completed and the first set of pipes is closed.
延時50毫秒之後再開始第一次沉積。 The first deposition begins after a delay of 50 milliseconds.
第一次沉積時，將CHF3與CH2F2的氣體組合通過第二組管道通入反應腔室內。 At the first deposition, the gas combination of CHF3 and CH2F2 is passed through the second set of conduits into the reaction chamber.
第一次沉積結束後，關閉第二組管道。 After the first deposition is completed, the second set of pipes is closed.
延時50毫秒之後再開始第二次蝕刻。 A second etch is started after a delay of 50 milliseconds.
第二次蝕刻時，將NF3與N2的氣體組合通過第一組管道通入反應腔室內，保持壓強、蝕刻頻率以及蝕刻功率不變，即反應腔室內壓強仍為120mT，蝕刻功率仍為2000WHz，但需要將第一次的蝕刻步驟的時間增加5%，為2.1秒，以此修正孔深對蝕刻速率的影響。 During the second etching, the gas combination of NF 3 and N 2 is introduced into the reaction chamber through the first group of pipes, and the pressure, etching frequency and etching power are kept constant, that is, the pressure in the reaction chamber is still 120 mT, and the etching power is still 2000 WHz, but the time of the first etching step needs to be increased by 5% to 2.1 seconds to correct the effect of the hole depth on the etching rate.
2.1s後，第二次蝕刻結束，關閉第一組管道。 After 2.1 s, the second etch ends and the first set of tubes is closed.
延時50毫秒之後再開始第二次沉積。 A second deposition is initiated after a delay of 50 milliseconds.
第二次沉積時，將CHF3與CH2F2的氣體組合通過第二組管道通入反應腔室內。 At the second deposition, a combination of CHF 3 and CH 2 F 2 gas is introduced into the reaction chamber through a second set of conduits.
第二次沉積結束後，關閉第二組管道。 After the second deposition is completed, the second set of pipes is closed.
延時50毫秒之後再開始第三次沉積。 The third deposition was started after a delay of 50 milliseconds.
循環蝕刻、沉積、蝕刻的步驟直至達到蝕刻深度要求，每次蝕刻時，保持壓強、蝕刻頻率以及蝕刻功率不變，將上一次的蝕刻步驟的時間增加5%，以此修正孔深對蝕刻速率的影響。 Cyclic etching, deposition, and etching steps until the etching depth is reached. The pressure, etching frequency, and etching power are kept constant for each etching, and the time of the previous etching step is increased by 5% to correct the hole depth to the etching rate. Impact.
由於採用了增加蝕刻步驟的時間的方式來補償通孔深度增加後的蝕刻速率減弱的方法，每次蝕刻的通孔增加的深度都相同，且達到了預期的要求，沒有因為通孔深度的增加而減弱蝕刻速率，最後得到的蝕刻深孔完全滿足工藝要求。 Since the method of increasing the etching step time is used to compensate for the weakening of the etching rate after the increase of the via depth, the depth of the via hole per etching is increased to the same extent and the expected requirement is achieved, and the depth of the via hole is not increased. The etching rate is weakened, and the resulting etched deep hole completely satisfies the process requirements.
實施例4 Example 4
本實施例中根據氣體閥門誤差、射頻功率、反應腔內部的壓力變化等多個工藝參數的得到的時間段△t為90毫秒，並且主要通過同時減小壓強、增加蝕刻功率、增加蝕刻步驟的時間的方式來補償通孔深度增加後的蝕刻速率減弱。 In the present embodiment, the time period Δt obtained according to the gas valve error, the RF power, the pressure change inside the reaction chamber, and the like is 90 milliseconds, and mainly by simultaneously reducing the pressure, increasing the etching power, and increasing the etching step. The way of time compensates for the weakening of the etch rate after the increase in via depth.
本發明提供了一種深矽通孔的蝕刻方法，在矽襯底上形成掩膜層，採用交替進行的蝕刻步驟和聚合物沉積步驟蝕刻深矽通孔，其中，蝕刻步驟中通過第一組管道通入蝕刻氣體，蝕刻氣體為SF6與CO的氣體組合。沉積步驟中通過第二組管道通入聚合物氣體，聚合物氣體為C4F8、C4F6、CHF3與CH2F2的氣體組合。 The present invention provides an etching method for deep via holes, forming a mask layer on a germanium substrate, etching the deep via holes by an alternating etching step and a polymer deposition step, wherein the first set of tubes is passed through the etching step An etching gas is introduced, and the etching gas is a gas combination of SF 6 and CO. In the deposition step, a polymer gas is introduced through a second set of tubes, and the polymer gas is a gas combination of C 4 F 8 , C 4 F 6 , CHF 3 and CH 2 F 2 .
第一次蝕刻時，將SF6與CO的氣體組合通過第一組管道通入反應腔室內，反應腔室內壓強為120mT、蝕刻功率為2000W，蝕刻步驟的時間為2s。 During the first etching, the gas combination of SF 6 and CO was introduced into the reaction chamber through the first group of tubes, the pressure in the reaction chamber was 120 mT, the etching power was 2000 W, and the etching step was 2 s.
2s後，第一次蝕刻結束，關閉第一組管道。 After 2 s, the first etching is completed and the first set of pipes is closed.
延時90毫秒之後再開始第一次沉積。 The first deposition begins after a delay of 90 milliseconds.
第一次沉積時，將C4F8、C4F6、CHF3與CH2F2的氣體組合通過第二組管道通入反應腔室內。 At the first deposition, a gas combination of C 4 F 8 , C 4 F 6 , CHF 3 and CH 2 F 2 is introduced into the reaction chamber through a second set of tubes.
第一次沉積結束後，關閉第二組管道。 After the first deposition is completed, the second set of pipes is closed.
延時70毫秒之後再開始第二次蝕刻。 The second etching is started after a delay of 70 milliseconds.
第二次蝕刻時，將SF6與CO的氣體組合通過第一組管道通入反應腔室內，將第一次的壓力減小1%，將第一次的蝕刻功率增加1%，將第一次的蝕刻步驟增加5%；即第二次蝕刻時，反應腔室內壓強大約為119.8mT、蝕刻功率為2020W，蝕刻步驟的時間為2.1s，以此修正孔深對蝕刻速率的影響。 In the second etching, the gas combination of SF 6 and CO is introduced into the reaction chamber through the first group of pipes, the first pressure is reduced by 1%, and the first etching power is increased by 1%, which will be the first. The etching step of the second step is increased by 5%; that is, when the second etching is performed, the pressure in the reaction chamber is about 119.8 mT, the etching power is 2020 W, and the etching step is 2.1 s, thereby correcting the influence of the hole depth on the etching rate.
2.1s後，第二次蝕刻結束，關閉第一組管道。 After 2.1 s, the second etch ends and the first set of tubes is closed.
延時90毫秒之後再開始第二次沉積。 A second deposition is initiated after a delay of 90 milliseconds.
第二次沉積時，將C4F8、C4F6、CHF3與CH2F2的氣體組合通過第二組管道通入反應腔室內。 At the second deposition, a gas combination of C 4 F 8 , C 4 F 6 , CHF 3 and CH 2 F 2 is introduced into the reaction chamber through a second set of tubes.
第二次沉積結束後，關閉第二組管道。 After the second deposition is completed, the second set of pipes is closed.
延時90毫秒之後再開始第三次沉積。 The third deposition begins after a delay of 90 milliseconds.
循環蝕刻、沉積、蝕刻的步驟直至達到蝕刻深度要求，每次蝕刻時，將第一次的壓力減小1%，將第一次的蝕刻功率增加1%，將第一次的蝕刻步驟增加5%，以此修正孔深對蝕刻速率的影響。 Cyclic etching, deposition, etching steps until the etch depth requirement is reached. Each time the etching is performed, the first pressure is reduced by 1%, the first etching power is increased by 1%, and the first etching step is increased by 5. % to correct the effect of hole depth on the etch rate.
由於採用了同時減小壓強、增加蝕刻功率、增加蝕刻步驟的時間的方式來補償通孔深度增加後的蝕刻速率減弱的方法，每次蝕刻的通孔增加的深度都相同，且達到了預期的要求，沒有因為通孔深度的增加而減弱蝕刻速率，最後得到的蝕刻深孔完全滿足工藝要求。 The method of compensating for the reduction of the etching rate after the increase of the via depth is increased by the method of simultaneously reducing the pressure, increasing the etching power, and increasing the etching step time, the depth of the via hole per etching is the same, and the expected value is achieved. It is required that the etching rate is not weakened due to the increase of the via depth, and the resulting etched deep hole completely satisfies the process requirements.
綜上可知，本發明的深矽通孔的蝕刻方法通過控制 閥門開閉時間來精確控制氣體反應時間，並且隨孔深增加而調節相應的蝕刻參數，以此來解決深孔蝕刻中隨孔深增加蝕刻速率減弱的問題。每次蝕刻的通孔增加的深度都相同，且達到了預期的要求，沒有因為通孔深度的增加而減弱蝕刻速率，最後得到的蝕刻深孔完全滿足工藝要求。 In summary, the etching method of the deep through hole of the present invention is controlled by The valve opening and closing time is used to precisely control the gas reaction time, and the corresponding etching parameters are adjusted as the hole depth is increased, thereby solving the problem that the etching rate is increased with the hole depth in the deep hole etching. Each of the etched vias is increased in depth to the same extent and meets the desired requirements. The etch rate is not attenuated by the increase in via depth, and the resulting etched deep wells fully meet the process requirements.
以上之敘述僅為本發明之較佳實施例說明，凡精于此項技藝者當可依據上述之說明而作其它種種之改良，惟這些改變仍屬□本發明之發明精神及以下所界定之專利範圍中。 The above description is only for the preferred embodiment of the present invention, and those skilled in the art can make other improvements according to the above description, but these changes are still the inventive spirit of the present invention and the following definitions. In the scope of patents.
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| US6117786A (en) * | 1998-05-05 | 2000-09-12 | Lam Research Corporation | Method for etching silicon dioxide using fluorocarbon gas chemistry |
| US6297163B1 (en) * | 1998-09-30 | 2001-10-02 | Lam Research Corporation | Method of plasma etching dielectric materials |
| US7728390B2 (en) * | 2005-05-06 | 2010-06-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-level interconnection memory device |
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