TWI544836B - Display device and method for making the same - Google Patents
Display device and method for making the same Download PDFInfo
- Publication number
- TWI544836B TWI544836B TW100140842A TW100140842A TWI544836B TW I544836 B TWI544836 B TW I544836B TW 100140842 A TW100140842 A TW 100140842A TW 100140842 A TW100140842 A TW 100140842A TW I544836 B TWI544836 B TW I544836B
- Authority
- TW
- Taiwan
- Prior art keywords
- partition wall
- electrode
- organic
- layer
- display device
- Prior art date
Links
- 238000000034 method Methods 0.000 title description 29
- 238000005192 partition Methods 0.000 claims description 197
- 239000010410 layer Substances 0.000 claims description 132
- 239000012044 organic layer Substances 0.000 claims description 77
- 230000002093 peripheral effect Effects 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 238000001039 wet etching Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 3
- 238000005401 electroluminescence Methods 0.000 claims description 2
- 238000005304 joining Methods 0.000 claims description 2
- 239000000976 ink Substances 0.000 description 50
- 239000000463 material Substances 0.000 description 46
- 239000002585 base Substances 0.000 description 44
- 239000010408 film Substances 0.000 description 44
- 229920005989 resin Polymers 0.000 description 37
- 239000011347 resin Substances 0.000 description 37
- 238000002347 injection Methods 0.000 description 28
- 239000007924 injection Substances 0.000 description 28
- 150000001875 compounds Chemical class 0.000 description 23
- 238000005530 etching Methods 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- -1 polysiloxane Polymers 0.000 description 11
- 239000011230 binding agent Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 10
- 239000011159 matrix material Substances 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 8
- 239000011737 fluorine Substances 0.000 description 8
- 229910052731 fluorine Inorganic materials 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000005525 hole transport Effects 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910052787 antimony Inorganic materials 0.000 description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 6
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 6
- 150000004696 coordination complex Chemical class 0.000 description 6
- 239000003431 cross linking reagent Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 229910052783 alkali metal Inorganic materials 0.000 description 5
- 150000001340 alkali metals Chemical class 0.000 description 5
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 5
- 150000001342 alkaline earth metals Chemical class 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000011575 calcium Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000011259 mixed solution Substances 0.000 description 5
- 229920000123 polythiophene Polymers 0.000 description 5
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 5
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 description 4
- 229910001632 barium fluoride Inorganic materials 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical compound [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- 229920000767 polyaniline Polymers 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 229910052792 caesium Inorganic materials 0.000 description 3
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 3
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 3
- 239000003999 initiator Substances 0.000 description 3
- 150000004866 oxadiazoles Chemical class 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229920000265 Polyparaphenylene Polymers 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 150000004982 aromatic amines Chemical class 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 125000003709 fluoroalkyl group Chemical group 0.000 description 2
- 238000005227 gel permeation chromatography Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000007646 gravure printing Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229920000172 poly(styrenesulfonic acid) Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229940005642 polystyrene sulfonic acid Drugs 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical compound [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 150000003219 pyrazolines Chemical class 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 229910052712 strontium Inorganic materials 0.000 description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 2
- 229910001935 vanadium oxide Inorganic materials 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 1
- NGQSLSMAEVWNPU-YTEMWHBBSA-N 1,2-bis[(e)-2-phenylethenyl]benzene Chemical class C=1C=CC=CC=1/C=C/C1=CC=CC=C1\C=C\C1=CC=CC=C1 NGQSLSMAEVWNPU-YTEMWHBBSA-N 0.000 description 1
- SHXCHSNZIGEBFL-UHFFFAOYSA-N 1,3-benzothiazole;zinc Chemical compound [Zn].C1=CC=C2SC=NC2=C1 SHXCHSNZIGEBFL-UHFFFAOYSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- APQXWKHOGQFGTB-UHFFFAOYSA-N 1-ethenyl-9h-carbazole Chemical class C12=CC=CC=C2NC2=C1C=CC=C2C=C APQXWKHOGQFGTB-UHFFFAOYSA-N 0.000 description 1
- UIWLITBBFICQKW-UHFFFAOYSA-N 1h-benzo[h]quinolin-2-one Chemical compound C1=CC=C2C3=NC(O)=CC=C3C=CC2=C1 UIWLITBBFICQKW-UHFFFAOYSA-N 0.000 description 1
- YMMGRPLNZPTZBS-UHFFFAOYSA-N 2,3-dihydrothieno[2,3-b][1,4]dioxine Chemical compound O1CCOC2=C1C=CS2 YMMGRPLNZPTZBS-UHFFFAOYSA-N 0.000 description 1
- VFBJMPNFKOMEEW-UHFFFAOYSA-N 2,3-diphenylbut-2-enedinitrile Chemical group C=1C=CC=CC=1C(C#N)=C(C#N)C1=CC=CC=C1 VFBJMPNFKOMEEW-UHFFFAOYSA-N 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- DWYHDSLIWMUSOO-UHFFFAOYSA-N 2-phenyl-1h-benzimidazole Chemical compound C1=CC=CC=C1C1=NC2=CC=CC=C2N1 DWYHDSLIWMUSOO-UHFFFAOYSA-N 0.000 description 1
- DDTHMESPCBONDT-UHFFFAOYSA-N 4-(4-oxocyclohexa-2,5-dien-1-ylidene)cyclohexa-2,5-dien-1-one Chemical compound C1=CC(=O)C=CC1=C1C=CC(=O)C=C1 DDTHMESPCBONDT-UHFFFAOYSA-N 0.000 description 1
- 239000005725 8-Hydroxyquinoline Substances 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- AJWRRBADQOOFSF-UHFFFAOYSA-N C1=CC=C2OC([Zn])=NC2=C1 Chemical compound C1=CC=C2OC([Zn])=NC2=C1 AJWRRBADQOOFSF-UHFFFAOYSA-N 0.000 description 1
- UXYHZIYEDDINQH-UHFFFAOYSA-N C1=CNC2=C3C=NN=C3C=CC2=C1 Chemical compound C1=CNC2=C3C=NN=C3C=CC2=C1 UXYHZIYEDDINQH-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000284156 Clerodendrum quadriloculare Species 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N N-phenyl amine Natural products NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 1
- 229930192627 Naphthoquinone Natural products 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229920000292 Polyquinoline Polymers 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- NRCMAYZCPIVABH-UHFFFAOYSA-N Quinacridone Chemical class N1C2=CC=CC=C2C(=O)C2=C1C=C1C(=O)C3=CC=CC=C3NC1=C2 NRCMAYZCPIVABH-UHFFFAOYSA-N 0.000 description 1
- 239000012327 Ruthenium complex Substances 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- DGEZNRSVGBDHLK-UHFFFAOYSA-N [1,10]phenanthroline Chemical compound C1=CN=C2C3=NC=CC=C3C=CC2=C1 DGEZNRSVGBDHLK-UHFFFAOYSA-N 0.000 description 1
- JFBZPFYRPYOZCQ-UHFFFAOYSA-N [Li].[Al] Chemical compound [Li].[Al] JFBZPFYRPYOZCQ-UHFFFAOYSA-N 0.000 description 1
- JHYLKGDXMUDNEO-UHFFFAOYSA-N [Mg].[In] Chemical compound [Mg].[In] JHYLKGDXMUDNEO-UHFFFAOYSA-N 0.000 description 1
- PAOGTKKVENWPHI-UHFFFAOYSA-N [Zn].[Zn].N1C(C=C2N=C(C=C3NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 Chemical compound [Zn].[Zn].N1C(C=C2N=C(C=C3NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 PAOGTKKVENWPHI-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- HAQFCILFQVZOJC-UHFFFAOYSA-N anthracene-9,10-dione;methane Chemical compound C.C.C1=CC=C2C(=O)C3=CC=CC=C3C(=O)C2=C1 HAQFCILFQVZOJC-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000011365 complex material Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 150000001893 coumarin derivatives Chemical class 0.000 description 1
- HFXKQSZZZPGLKQ-UHFFFAOYSA-N cyclopentamine Chemical class CNC(C)CC1CCCC1 HFXKQSZZZPGLKQ-UHFFFAOYSA-N 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 150000008376 fluorenones Chemical class 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229910021482 group 13 metal Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- LHJOPRPDWDXEIY-UHFFFAOYSA-N indium lithium Chemical compound [Li].[In] LHJOPRPDWDXEIY-UHFFFAOYSA-N 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000007644 letterpress printing Methods 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 1
- 229910052808 lithium carbonate Inorganic materials 0.000 description 1
- GCICAPWZNUIIDV-UHFFFAOYSA-N lithium magnesium Chemical compound [Li].[Mg] GCICAPWZNUIIDV-UHFFFAOYSA-N 0.000 description 1
- FUJCRWPEOMXPAD-UHFFFAOYSA-N lithium oxide Chemical compound [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 description 1
- 229910001947 lithium oxide Inorganic materials 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 229910052976 metal sulfide Inorganic materials 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- DCZNSJVFOQPSRV-UHFFFAOYSA-N n,n-diphenyl-4-[4-(n-phenylanilino)phenyl]aniline Chemical class C1=CC=CC=C1N(C=1C=CC(=CC=1)C=1C=CC(=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 DCZNSJVFOQPSRV-UHFFFAOYSA-N 0.000 description 1
- 150000002791 naphthoquinones Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- WCPAKWJPBJAGKN-UHFFFAOYSA-N oxadiazole Chemical compound C1=CON=N1 WCPAKWJPBJAGKN-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229960003540 oxyquinoline Drugs 0.000 description 1
- DGBWPZSGHAXYGK-UHFFFAOYSA-N perinone Chemical class C12=NC3=CC=CC=C3N2C(=O)C2=CC=C3C4=C2C1=CC=C4C(=O)N1C2=CC=CC=C2N=C13 DGBWPZSGHAXYGK-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 239000011698 potassium fluoride Substances 0.000 description 1
- 235000003270 potassium fluoride Nutrition 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N sodium oxide Chemical compound [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- 229910001948 sodium oxide Inorganic materials 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- PJANXHGTPQOBST-UHFFFAOYSA-N stilbene Chemical class C=1C=CC=CC=1C=CC1=CC=CC=C1 PJANXHGTPQOBST-UHFFFAOYSA-N 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- VLLMWSRANPNYQX-UHFFFAOYSA-N thiadiazole Chemical compound C1=CSN=N1.C1=CSN=N1 VLLMWSRANPNYQX-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
- H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80515—Anodes characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
本發明係關於一種顯示裝置及其製造方法。The present invention relates to a display device and a method of fabricating the same.
顯示裝置依其構造及原理不同有各種裝置。其中一種目前正實用化於像素之光源利用有機電致發光元件(以下稱為「有機EL元件」。)之顯示裝置。The display device has various devices depending on its structure and principle. One of the display devices which are currently applied to a light source of a pixel using an organic electroluminescence device (hereinafter referred to as "organic EL device").
前述顯示裝置中，對應像素之大量有機EL元件係排列於規定之基台上而進行配置。此外，在基台上設置有用以劃分規定之分區的分隔壁，大量有機EL元件係分別排列於藉由分隔壁而劃分之區域而進行配置。In the display device described above, a large number of organic EL elements corresponding to the pixels are arranged on a predetermined base. Further, a partition wall for partitioning a predetermined partition is provided on the base, and a large number of organic EL elements are arranged in a region partitioned by the partition wall.
各有機EL元件係由基台側開始以第1電極、有機層和第2電極之順序積層而形成。Each of the organic EL elements is formed by laminating the first electrode, the organic layer, and the second electrode in this order from the base side.
前述有機層例如可藉由塗佈法而形成。參考第8圖並說明有機層之形成方法。正如第8A圖所示，首先準備預先形成第1電極16和分隔壁13之基台12。接著在該基台12中被分隔壁13包圍之區域15供給包含形成有機層18之材料之油墨17。供給之油墨17係收納在分隔壁13所包圍之區域(凹部)15(參考第8B圖)。接著藉由氣化油墨17之溶媒而形成有機層18(參考第8C圖)。The organic layer can be formed, for example, by a coating method. Referring to Figure 8, a method of forming an organic layer will be described. As shown in Fig. 8A, first, the base 12 on which the first electrode 16 and the partition wall 13 are formed in advance is prepared. Next, the ink 17 containing the material forming the organic layer 18 is supplied to the region 15 surrounded by the partition wall 13 in the base 12. The supplied ink 17 is housed in a region (concave portion) 15 surrounded by the partition wall 13 (refer to Fig. 8B). Next, the organic layer 18 is formed by vaporizing the solvent of the ink 17 (refer to Fig. 8C).
此外，在分隔壁13對於油墨17顯示親液性時，供給之油墨17係沿著分隔壁13之表面而流出至相鄰凹部為止。為了防止此等油墨之流出，通常在基台12之上設置對於油墨顯示一定程度疏液性之分隔壁13。Further, when the partition wall 13 exhibits lyophilicity with respect to the ink 17, the supplied ink 17 flows out along the surface of the partition wall 13 to the adjacent recess. In order to prevent the outflow of such inks, a partition wall 13 which exhibits a certain degree of lyophobic property to the ink is usually provided on the base 12.
但是，分隔壁13顯示疏液性時，供給至凹部15之油墨係彈開於分隔壁13而氣化並且薄膜化，因此形成膜厚不均勻之發光層。However, when the partition wall 13 exhibits lyophobic property, the ink supplied to the concave portion 15 is bounced off the partition wall 13 to be vaporized and thinned, so that a light-emitting layer having a non-uniform film thickness is formed.
例如有機層18接於分隔壁13之部位(也就是有機層18之周邊部)係比中央部膜厚薄。此時，有機層周邊部之電阻比中央部低。結果在驅動有機EL元件時，在周邊部電流集中而流動，與周邊部相比中央部較暗。此外，相反地，發光層18之周邊部比起要求之膜厚還薄，因此發光層18之周邊部也如所預期不會發光。For example, the portion of the organic layer 18 that is connected to the partition wall 13 (that is, the peripheral portion of the organic layer 18) is thinner than the central portion. At this time, the resistance of the peripheral portion of the organic layer is lower than that of the central portion. As a result, when the organic EL element is driven, current flows in the peripheral portion and flows, and the central portion is darker than the peripheral portion. Further, conversely, the peripheral portion of the light-emitting layer 18 is thinner than the required film thickness, so that the peripheral portion of the light-emitting layer 18 also does not emit light as expected.
為了解決前述問題，先前技術中，在分隔壁13和第1電極16之間設置間隔部19，並在分隔壁端部和第1電極之間設置微細之間隙(參考第9圖)。在設置間隙之基台上供給油墨時，藉由毛細管現象使油墨吸入間隙並且薄膜化。如此，油墨不會因分隔壁端部彈開並且薄膜化，因此可形成預期膜厚之有機層。In order to solve the above problem, in the prior art, the partition portion 19 is provided between the partition wall 13 and the first electrode 16, and a fine gap is provided between the partition wall end portion and the first electrode (refer to Fig. 9). When the ink is supplied on the abutment on which the gap is provided, the ink is sucked into the gap by the capillary phenomenon and thinned. In this way, the ink does not bounce off and is thinned by the end of the partition wall, so that an organic layer of a desired film thickness can be formed.
專利文獻1：日本特開2009-506490號公報Patent Document 1: Japanese Laid-Open Patent Publication No. 2009-506490
但是，在前述先前技術中，為了形成間隙而需要間隔部，故有顯示裝置構造複雜化之問題。However, in the above prior art, since the spacer is required in order to form a gap, there is a problem that the structure of the display device is complicated.
因此，本發明之目的係提供一種可在分隔壁所包圍之區域形成均勻膜厚之有機層，且具有簡易構造之顯示裝置。Accordingly, it is an object of the present invention to provide a display device which can form an organic layer having a uniform film thickness in a region surrounded by a partition wall and which has a simple structure.
本發明係提供以下之顯示裝置及其製造方法。The present invention provides the following display device and method of fabricating the same.
[1]：一種顯示裝置，其係包含基台、在該基台上劃分預先設定之分區之的分隔壁、以及分別設置於藉由該分隔壁而劃分之分區的複數之有機電致發光元件的顯示裝置，其中，各有機電致發光元件係包含至少一層之第1電極、至少一層之有機層和至少一層之第2電極，並由前述之基台側起以該順序層積；前述分隔壁其端部接合在前述之第1電極上；前述第1電極係前述分隔壁之端部所覆蓋之部位以外之殘餘部位及該殘餘部位之周邊部具有凹陷，由前述基台厚度方向之一邊來看，此凹陷係於較前述分隔壁端部與前述第1電極之界面更接近於基台側。。[1]: A display device comprising a base, a partition wall dividing a predetermined partition on the base, and a plurality of organic electroluminescent elements respectively disposed on a partition partitioned by the partition wall The display device, wherein each of the organic electroluminescent elements comprises at least one of a first electrode, at least one organic layer, and at least one second electrode, and is laminated in this order from the abutment side; The end portion of the partition wall is joined to the first electrode; the remaining portion of the first electrode portion other than the portion covered by the end portion of the partition wall and the peripheral portion of the residual portion have a recess, and one side of the thickness direction of the base portion In view of the above, the recess is closer to the base side than the interface between the end of the partition wall and the first electrode. .
[2]：如[1]所述之顯示裝置，其中，前述凹陷深度係20nm至300nm。[2] The display device according to [1], wherein the recess depth is 20 nm to 300 nm.
[3]：一種顯示裝置之製造方法，該顯示裝置係包含基台、在該基台上劃分預先設定之分區的分隔壁、以及分別設置於藉由該分隔壁而劃分之分區的複數之有機電致發光元件；各有機電致發光元件係包含至少一層之第1電極、至少一層之有機層和至少一層之第2電極；並由前述之基台側起以該順序層積而成；該製造方法包含：準備具有至少一層之第1電極設在上面之基台之步驟；將分隔壁形成圖案(pattern)並使該分隔壁之端部接合在前述第1電極上之步驟；在前述第1電極中，於前述分隔壁之端部所覆蓋之部位以外之殘餘部位及該殘餘部位之周邊部之表面形成凹陷之步驟；在前述第1電極上形成至少一層之有機層之步驟；以及，在前述有機層上，形成至少一層之第2電極之步驟。[3]: A method of manufacturing a display device, comprising: a base, a partition wall dividing a predetermined partition on the base, and a plurality of partitions respectively disposed on the partition by the partition An electroluminescent device; each of the organic electroluminescent elements comprising at least one of a first electrode, at least one organic layer, and at least one second electrode; and is laminated in this order from the abutment side; The manufacturing method includes the steps of: preparing a base having at least one layer of a first electrode provided thereon; forming a pattern of the partition wall and joining an end portion of the partition wall to the first electrode; a step of forming a recess in a portion other than a portion covered by an end portion of the partition wall and a peripheral portion of the residual portion; and forming at least one organic layer on the first electrode; and A step of forming at least one second electrode on the organic layer.
[4]：如[3]所述之顯示裝置，在形成前述凹陷之步驟中，藉由濕式蝕刻(wet etching)而形成前述之凹陷。[4] The display device according to [3], wherein the recess is formed by wet etching in the step of forming the recess.
根據本發明可提供一種可在分隔壁包圍之區域形成均勻膜厚之有機層，且具有簡易構造之顯示裝置。According to the present invention, it is possible to provide a display device which can form an organic layer having a uniform film thickness in a region surrounded by a partition wall and which has a simple structure.
以下參考圖式並更詳細地說明本發明之實施形態。此外，為了容易理解，故有圖式各構件之比例不同於實際之情形。在顯示裝置中也存在電極之導線等之構件，但在本發明說明中並不直接地需要故省略記載。為易於說明層構造等，以下所示例中係以基台配置於下面之圖而一同說明，但本發明之顯示裝置係不一定配置於該上下左右之方向，且不限定於製造或使用等所成之形態，而可適宜地調整。Embodiments of the present invention will be described in more detail below with reference to the drawings. In addition, for ease of understanding, the ratio of the components of the drawings is different from the actual situation. Although a member such as a lead wire of an electrode is also present in the display device, it is not directly required in the description of the present invention. In order to facilitate the description of the layer structure and the like, the following examples are described with the base plate arranged in the following drawings. However, the display device of the present invention is not necessarily arranged in the vertical and horizontal directions, and is not limited to manufacturing or use. It can be adjusted as appropriate.
本發明之顯示裝置係包含基台、在該基台上劃分預先設定之分區的分隔壁、以及分別設置於藉由該分隔壁而劃分之分區的複數個有機電致發光元件的顯示裝置，其特徵為：各有機EL元件係包含至少一層之第1電極、至少一層之有機層和至少一層之第2電極，並由前述基台側起以該順序層積；前述分隔壁其端部接合在前述之第1電極上；前述之第1電極係前述分隔壁端部所覆蓋之部位以外之殘餘部位及該殘餘部位之周邊部具有凹陷，由前述基台厚度方向之一邊來看此凹陷係於較前述分隔壁端部與前述第1電極之界面更接近於基台側。A display device according to the present invention includes a base, a partition wall that divides a predetermined partition on the base, and a display device that is provided in a plurality of organic electroluminescent elements respectively partitioned by the partition wall. Each of the organic EL elements includes at least one of a first electrode, at least one organic layer, and at least one second electrode, and is laminated in this order from the base side; the partition is joined at its end In the first electrode, the first electrode is a recess other than a portion covered by the end portion of the partition wall and a peripheral portion of the residual portion, and the recess is formed by one side of the thickness direction of the base. The interface between the end of the partition wall and the first electrode is closer to the base side.
顯示裝置主要有主動矩陣(active matrix)驅動型裝置和被動矩陣(passive matrix)驅動型之裝置。本發明係可適用於兩種型式之顯示裝置，但在本實施形態說明其一例之適用於主動矩陣驅動型顯示裝置之顯示裝置。The display device mainly includes an active matrix driven device and a passive matrix driven device. The present invention can be applied to two types of display devices. However, in this embodiment, a display device suitable for an active matrix drive type display device will be described.
首先說明顯示裝置之構造。第1圖係擴大而示意地表示本實施形態之顯示裝置1之一部份的剖面圖。第2圖係擴大而示意地表示本實施形態之顯示裝置1之一部份的俯視圖。顯示裝置1係主要包含基台2、在該基台2上劃分預先設定之分區之分隔壁3、以及於藉由分隔壁3而劃分之分區所分別設置之複數有機EL元件4而構成。First, the configuration of the display device will be described. Fig. 1 is a cross-sectional view showing a part of the display device 1 of the present embodiment in an enlarged manner. Fig. 2 is a plan view showing a part of the display device 1 of the present embodiment in an enlarged manner. The display device 1 mainly includes a base 2, a partition wall 3 that divides a predetermined partition on the base 2, and a plurality of organic EL elements 4 that are respectively provided in the partitions partitioned by the partition wall 3.
分隔壁3係在基台2上形成為例如格子狀或條紋狀。此外，在第2圖中，表示一實施形態之設置格子狀之分隔壁3的顯示裝置1。在同圖中，影線(hatching)區域係相當於分隔壁3。The partition wall 3 is formed, for example, in a lattice shape or a stripe shape on the base 2. Further, in Fig. 2, a display device 1 in which a lattice-shaped partition wall 3 of one embodiment is provided is shown. In the same figure, the hatching area corresponds to the partition wall 3.
在基台2上設定藉由分隔壁3和基台2所規定之複數之凹部5。該凹部5係相當於藉由分隔壁3而劃分之分區。A plurality of recesses 5 defined by the partition wall 3 and the base 2 are set on the base 2. This recess 5 corresponds to a partition defined by the partition wall 3.
本實施形態之分隔壁3係設為格子狀。因此由基台2之厚度方向Z之一邊(以下稱為「平面俯視」。)來看，複數之凹部5係配置為矩陣狀。也就是說凹部5係在行方向X空出預定間隔，同時也在列方向Y空出預定間隔並排列及設置。各凹部5之平面俯視之形狀並無特別限定。例如凹部5以平面俯視可形成為略矩形狀、略橢圓狀或橢圓形狀等之形狀。本實施形態中以平面俯視而設置略矩形狀之凹部5。此外，本說明書中，前述之行方向X及列方向Y係表示分別垂直於基台厚度方向Z、並且相互地垂直之方向。The partition wall 3 of the present embodiment is formed in a lattice shape. Therefore, from the one side of the thickness direction Z of the base 2 (hereinafter referred to as "planar plan view"), the plurality of recesses 5 are arranged in a matrix. That is to say, the recesses 5 are spaced apart by a predetermined interval in the row direction X, and are also arranged and arranged at a predetermined interval in the column direction Y. The shape of the plane of each of the recesses 5 is not particularly limited. For example, the concave portion 5 may be formed in a shape of a substantially rectangular shape, a slightly elliptical shape, or an elliptical shape in plan view. In the present embodiment, the recessed portion 5 having a substantially rectangular shape is provided in a plan view. Further, in the present specification, the row direction X and the column direction Y described above are directions perpendicular to the thickness direction Z of the base and perpendicular to each other.
本實施形態之分隔壁3係所謂順錐形狀。也就是說本實施形態之分隔壁3係隨著離開於基台2而形成為尖細狀。例如將延在於列方向Y之分隔壁以垂直於其延在方向(列方向Y)之平面切斷時之剖面形狀，係除了分隔壁3之基台附近之一部份區域(由基台之表面起該區域之高度係相當於第1電極6之周邊部之厚度。)以外，隨著離開於基台而形成為尖細狀。第1圖中，表示有略等邊梯形形狀(也就是除了前述基台附近之一部份區域以外之等邊梯形形狀)之分隔壁，若比較上底和梯形底側下底之，則下底係比起上底更寬。此外，實際形成之分隔壁剖面不一定為梯形狀，梯形狀之直線部份及角可帶有圓形，並形成為所謂魚板狀(圓頂(dome)狀)。The partition wall 3 of the present embodiment is a so-called tapered shape. In other words, the partition wall 3 of the present embodiment is formed in a tapered shape as it leaves the base 2. For example, the shape of the cross section when the partition wall extending in the column direction Y is cut perpendicularly to the plane extending in the direction (column direction Y) is a part of the vicinity of the base of the partition wall 3 (by the abutment The height of the surface of the surface corresponds to the thickness of the peripheral portion of the first electrode 6, and is formed into a tapered shape as it leaves the base. In Fig. 1, a partition wall having a substantially equilateral trapezoidal shape (i.e., an equilateral trapezoidal shape other than a portion of the vicinity of the abutment) is shown, and if the upper bottom and the trapezoidal bottom side are compared, the lower The bottom is wider than the upper base. Further, the actually formed partition wall section is not necessarily trapezoidal, and the straight portions and corners of the trapezoidal shape may have a circular shape and are formed in a so-called fish plate shape (dome shape).
分隔壁3在本實施形態中主要設置在設置有機EL元件之區域以外之區域。此外，分隔壁3係主要設置在後述設置第1電極6之區域以外之區域，但其端部3a也形成在第1電極6之周邊部上而重疊於第1電極6。此外，在分隔壁3之端部3a和第1電極6之間形成預定之間隙31。此外，分隔壁3之端部3a係不需要覆蓋第1電極6之全周邊部而形成。例如在形成後述條紋狀之分隔壁3時，可形成分隔壁而使分隔壁端部覆蓋第1電極6的4邊中相對向之2邊。本實施形態中，形成分隔壁3之端部3a而覆蓋第1電極6之全周邊部。此外，藉由分隔壁3之端部3a而覆蓋之第1電極6之周邊部的寬通常為20nm以上，較佳為20nm至1μm(在此，所謂藉由分隔壁端部而覆蓋之第1電極之周邊部的寬，係指由基台厚度方向之一邊來看時周邊部的寬。例如在藉由分隔壁端部而覆蓋第1電極之全周邊部之第2圖之形態中，係指稱沿著行方向X之寬及沿著列方向Y之寬，在藉由分隔壁端部而覆蓋第1電極之4邊中相對向之2邊之第6圖之形態中，係指稱沿著行方向X之幅寬。)。In the present embodiment, the partition wall 3 is mainly provided in a region other than the region where the organic EL element is provided. In addition, the partition wall 3 is mainly provided in a region other than the region in which the first electrode 6 is provided to be described later, but the end portion 3a is also formed on the peripheral portion of the first electrode 6 and is superposed on the first electrode 6. Further, a predetermined gap 31 is formed between the end portion 3a of the partition wall 3 and the first electrode 6. Further, the end portion 3a of the partition wall 3 does not need to be formed to cover the entire peripheral portion of the first electrode 6. For example, when the stripe-shaped partition wall 3 to be described later is formed, the partition wall can be formed such that the partition wall end portion covers the two opposite sides of the four sides of the first electrode 6. In the present embodiment, the end portion 3a of the partition wall 3 is formed to cover the entire peripheral portion of the first electrode 6. Further, the width of the peripheral portion of the first electrode 6 covered by the end portion 3a of the partition wall 3 is usually 20 nm or more, preferably 20 nm to 1 μm (here, the first cover covered by the partition wall end portion) The width of the peripheral portion of the electrode refers to the width of the peripheral portion when viewed from one side in the thickness direction of the base. For example, in the form of the second figure covering the entire peripheral portion of the first electrode by the end portion of the partition wall, The width of the reference along the row direction X and the width along the column direction Y, in the form of the sixth figure facing the two sides of the four sides of the first electrode by the end of the partition wall, is referred to along The width of the row direction X.).
有機EL元件4係設置在藉由分隔壁3而劃分之分區(也就是凹部5)。如本實施形態般設置格子狀之分隔壁3時，各有機EL元件4係分別設置在各凹部5。因此有機EL元件4係相同於各凹部5而呈矩陣狀地配置，在基台2上，在行方向X空出預定之間隔，同時也在列方向Y空出預定之間隔而排列並設置。The organic EL element 4 is provided in a partition (that is, the recess 5) divided by the partition wall 3. When the grid-shaped partition wall 3 is provided as in the present embodiment, each of the organic EL elements 4 is provided in each of the recesses 5. Therefore, the organic EL elements 4 are arranged in a matrix in the same manner as the respective concave portions 5, and are arranged at a predetermined interval in the row direction X on the base 2, and are arranged and arranged at a predetermined interval in the column direction Y.
在本實施形態設置有3種類之有機EL元件4。即設置(1)射出紅色光之紅色有機EL元件4R、(2)射出綠色光之綠色有機EL元件4G、以及(3)射出藍色光之藍色有機EL元件4B。這些3種類之有機EL元件4R、4G、4B係例如在列方向Y以(I)、(II)、(III)之行之順序重複地配置，藉此分別排列並配置(參考第2圖)。In the present embodiment, three types of organic EL elements 4 are provided. In other words, (1) a red organic EL element 4R that emits red light, (2) a green organic EL element 4G that emits green light, and (3) a blue organic EL element 4B that emits blue light. The three types of organic EL elements 4R, 4G, and 4B are arranged in the order of (I), (II), and (III) in the column direction Y, for example, and are arranged and arranged (refer to FIG. 2). .
(I)在行方向X分別空出預定之間隔而配置紅色有機EL元件4R之行。(I) A row of the red organic EL elements 4R is arranged at a predetermined interval in the row direction X.
(II)在行方向X分別空出預定之間隔而配置綠色有機EL元件4G之行。(II) The green organic EL element 4G is arranged at a predetermined interval in the row direction X.
(III)在行方向X分別空出預定之間隔而配置藍色有機EL元件4B之行。(III) The row of the blue organic EL elements 4B is arranged at a predetermined interval in the row direction X.
此外，作為其他之實施形態，除了前述3種類之有機EL元件以外例如也可設置射出白色光之有機EL元件。此外，可藉由設置僅1種類之有機EL元件而實現單色顯示裝置。In addition, as another embodiment, an organic EL element that emits white light may be provided in addition to the above-described three types of organic EL elements. Further, a monochrome display device can be realized by providing only one type of organic EL element.
有機EL元件4係包含至少一層之第1電極、至少一層之有機層、至少一層之第2電極，而由基台2側起以該順序進行層積。在本說明書中，將設置於第1電極6和第2電極10之間之層中，包含有機物之層稱為有機層。有機EL元件4具備至少一層之發光層作為有機層。此外，有機EL元件除了1層之發光層以外，亦可視其必要復具備不同於發光層之有機層或無機層。例如可在第1電極6和第2電極10之間設置電洞注入層、電洞輸送層、電子阻擋層、電子輸送層和電子注入層等。此外，可在第1電極6和第2電極10之間設置2層以上之發光層。The organic EL element 4 includes at least one of a first electrode, at least one organic layer, and at least one second electrode, and is laminated in this order from the side of the base 2 . In the present specification, a layer provided between the first electrode 6 and the second electrode 10, and a layer containing an organic substance is referred to as an organic layer. The organic EL element 4 is provided with at least one light-emitting layer as an organic layer. Further, in addition to the light-emitting layer of one layer, the organic EL element may have an organic layer or an inorganic layer different from the light-emitting layer as necessary. For example, a hole injection layer, a hole transport layer, an electron blocking layer, an electron transport layer, an electron injection layer, and the like may be provided between the first electrode 6 and the second electrode 10. Further, two or more light-emitting layers may be provided between the first electrode 6 and the second electrode 10.
有機EL元件4係具備第1電極6和第2電極10作為由陽極和陰極組成之一對的電極。第1電極6和第2電極10中一邊之電極設置作為陽極，另一邊之電極設置作為陰極。The organic EL element 4 includes an electrode in which the first electrode 6 and the second electrode 10 are formed as one pair of an anode and a cathode. The electrodes of one of the first electrode 6 and the second electrode 10 are provided as an anode, and the other electrode is provided as a cathode.
作為本實施形態之一例而說明作為陽極機能之第1電極6、作為電洞注入層機能之第1有機層7、作為發光層機能之第2有機層9、以及作為陰極機能之第2電極10，以該順序而層積於基台2上之構造之有機EL元件4。As an example of the present embodiment, the first electrode 6 as the anode function, the first organic layer 7 as the hole injection layer function, the second organic layer 9 as the light-emitting layer function, and the second electrode 10 as the cathode function can be described. The organic EL element 4 of the structure laminated on the base 2 in this order.
本實施形態中設置3種類之有機EL元件，但該等之第2有機層(在本實施形態之發光層)9之構造係分別不同。紅色有機EL元件4R具備放射紅色光之紅色發光層9。綠色有機EL元件4G具備放射綠色光之綠色發光層9。藍色有機EL元件4B具備放射藍色光之藍色發光層9。In the present embodiment, three types of organic EL elements are provided, but the structures of the second organic layers (the light-emitting layers of the present embodiment) 9 are different. The red organic EL element 4R includes a red light-emitting layer 9 that emits red light. The green organic EL element 4G includes a green light-emitting layer 9 that emits green light. The blue organic EL element 4B is provided with a blue light-emitting layer 9 that emits blue light.
本實施形態中第1電極6係設置在每一個有機EL元件4。也就是說，有機EL元件4和相同數目之第1電極6係設置在基台2上。第1電極6係對應於有機EL元件4之配置而進行設置，且有機EL元件4相同地配置為矩陣狀。此外，本實施形態之分隔壁3係主要呈格子狀地形成在第1電極6以外之區域，此外形成其端部3a而覆蓋第1電極6之周邊部(參考第1圖)。In the present embodiment, the first electrode 6 is provided in each of the organic EL elements 4. That is, the organic EL element 4 and the same number of first electrodes 6 are provided on the base 2. The first electrode 6 is provided corresponding to the arrangement of the organic EL elements 4, and the organic EL elements 4 are arranged in a matrix shape in the same manner. Further, the partition wall 3 of the present embodiment is formed mainly in a lattice shape in a region other than the first electrode 6, and the end portion 3a is formed to cover the peripheral portion of the first electrode 6 (refer to Fig. 1).
由基台2厚度方向之一邊來看，第1電極6在前述分隔壁之端部3a所覆蓋之部位以外之殘餘部位6a、以及該殘餘部位之周邊部(也就是殘餘部位附近之外側區域)6b具有凹陷，此凹陷係於較前述分隔壁端部與前述第1電極之界面更接近於基台2側。藉由形成如此凹陷，而在分隔壁3之端部3a和第1電極6之間形成預定之間隙31。此外，此種凹陷在第1電極6中，可涵蓋前述分隔壁之端部3a所覆蓋之部位以外之殘餘部位6a與該殘餘部位之周邊部6b而設置，並在每一個第1電極6分別設置一個。The remaining portion 6a of the first electrode 6 other than the portion covered by the end portion 3a of the partition wall and the peripheral portion of the residual portion (that is, the outer side region near the residual portion) are viewed from one side in the thickness direction of the base 2 6b has a recess which is closer to the side of the base 2 than the interface between the end of the partition wall and the first electrode. By forming such a depression, a predetermined gap 31 is formed between the end portion 3a of the partition wall 3 and the first electrode 6. Further, such a recess may be provided in the first electrode 6 so as to cover the remaining portion 6a other than the portion covered by the end portion 3a of the partition wall and the peripheral portion 6b of the remaining portion, and is provided in each of the first electrodes 6 Set one.
作為電洞注入層機能之第1有機層7係設置於凹部5中的第1電極6上。該第1有機層7視其必要而在每種類之有機EL元件設置不同材料或膜厚。此外由第1有機層7之形成步驟之簡易度的觀點來看，則可以相同之材料、相同之膜厚形成全部之第1有機層7。該第1有機層7係以其端部填充於分隔壁3和第1電極6之間的間隙31之方式而形成。The first organic layer 7 functioning as a hole injection layer is provided on the first electrode 6 in the recess 5. The first organic layer 7 is provided with different materials or film thicknesses for each type of organic EL element as necessary. Further, from the viewpoint of the ease of the formation step of the first organic layer 7, all of the first organic layers 7 can be formed of the same material and the same film thickness. The first organic layer 7 is formed such that its end portion is filled in the gap 31 between the partition wall 3 and the first electrode 6.
作為發光層機能之第2有機層9係設置於凹部5中的第1有機層7上。如前述發光層係配合有機EL元件之種類而設置。也就是說，紅色發光層9係設置在設置紅色有機EL元件4R之凹部5。綠色發光層9係設置在設置綠色有機EL元件4G之凹部5。藍色發光層9係設置在設置藍色有機EL元件4B之凹部5。The second organic layer 9 functioning as a light-emitting layer is provided on the first organic layer 7 in the concave portion 5. The light-emitting layer is provided in accordance with the type of the organic EL element. That is, the red light-emitting layer 9 is provided in the recess 5 in which the red organic EL element 4R is disposed. The green light-emitting layer 9 is provided in the recess 5 in which the green organic EL element 4G is provided. The blue light-emitting layer 9 is provided in the recess 5 in which the blue organic EL element 4B is provided.
此外，第2有機層9以其端部填充於分隔壁3和第1電極6之間的間隙31之方式而形成。Further, the second organic layer 9 is formed such that its end portion is filled in the gap 31 between the partition wall 3 and the first electrode 6.
第2電極10係形成於設置有機EL元件4之顯示區域整面。也就是說第2電極10係不僅形成在第2有機層9上，也形成在分隔壁3上，並涵蓋複數有機EL元件而連續地形成，而設置作為全部有機EL元件4共通之電極。The second electrode 10 is formed on the entire surface of the display region where the organic EL element 4 is provided. In other words, the second electrode 10 is formed not only on the second organic layer 9, but also on the partition wall 3, and is formed continuously by covering a plurality of organic EL elements, and is provided as an electrode common to all the organic EL elements 4.
本發明之顯示裝置之製造方法其特徵為包含：準備設置至少一層之第1電極於其上之基台之步驟；將分隔壁形成圖案並使該分隔壁之端部接合在前述第1電極上之步驟；在前述之第1電極中，於前述分隔壁端部覆蓋之部位以外之殘餘部位及該殘餘部位之周邊部之表面形成凹陷之步驟；在前述之第1電極上，形成至少一層之有機層之步驟；以及，在前述之有機層上，形成至少一層之第2電極之步驟。A method of manufacturing a display device according to the present invention is characterized by comprising: a step of preparing a substrate on which at least one of the first electrodes is disposed; forming a partition wall and bonding an end portion of the partition wall to the first electrode a step of forming a recess on a surface of a portion other than a portion covered by the end portion of the partition wall and a peripheral portion of the residual portion in the first electrode; and forming at least one layer on the first electrode a step of forming an organic layer; and forming a second electrode of at least one layer on the organic layer.
以下參考第3圖至第5圖並說明顯示裝置之製造方法。Hereinafter, a method of manufacturing the display device will be described with reference to FIGS. 3 to 5.
在本步驟中準備設置至少一層之第1電極於其上之基台。以下說明準備設置一層之第1電極於其上之基台之實施形態。本步驟中在基台2上形成第1電極6(參考第3A圖)。此外，在本步驟中，第1電極6預先形成於其上之基台可由市場獲得，而可藉此準備預先形成第1電極6之基台2。In this step, it is prepared to set at least one of the bases on which the first electrode is placed. Hereinafter, an embodiment in which a base on which a first electrode of one layer is to be placed is prepared will be described. In this step, the first electrode 6 is formed on the base 2 (refer to FIG. 3A). Further, in this step, the base on which the first electrode 6 is previously formed can be obtained from the market, and the base 2 on which the first electrode 6 is formed in advance can be prepared.
主動矩陣型之顯示裝置之情形，可將預先形成用以個別地驅動複數個有機EL元件之迴路之基板作為基台2使用。可使用例如預先形成TFT(Thin Film Transistor)及電容器等之基板而作為基台。In the case of an active matrix type display device, a substrate on which a circuit for individually driving a plurality of organic EL elements is formed in advance can be used as the base 2. For example, a substrate such as a TFT (Thin Film Transistor) and a capacitor can be used in advance as a base.
首先在基台2上呈矩陣狀地形成複數個第1電極6。第1電極6係例如在基台2上之一面形成導電性薄膜，並以光刻(photolithography)法圖案化該矩陣狀地而形成圖案。此外例如可將在預定之部位形成開口之遮罩配置於基台2上，並透過該遮罩而在基台2上預定部位選擇性地堆積導電性材料，藉此對第1電極6形成圖案。第1電極6之材料係於後述。First, a plurality of first electrodes 6 are formed in a matrix on the base 2. The first electrode 6 is formed by, for example, forming a conductive thin film on one surface of the base 2, and patterning the matrix by photolithography to form a pattern. Further, for example, a mask having an opening formed at a predetermined portion may be disposed on the base 2, and a conductive material may be selectively deposited on a predetermined portion of the base 2 through the mask, thereby patterning the first electrode 6. . The material of the first electrode 6 will be described later.
在本步驟中，對於前述之分隔壁形成圖案而使其端部接合於前述之第1電極上。本實施形態中首先將包含感光性樹脂之油墨塗佈於前述基台上而形成分隔壁形成用膜8。油墨之塗佈方法可列舉例如旋轉塗佈法或縫隙塗佈法等。In this step, the partition wall is patterned and the end portion is joined to the first electrode. In the present embodiment, first, an ink containing a photosensitive resin is applied onto the base to form a film for forming a partition wall 8. Examples of the method of applying the ink include a spin coating method and a slit coating method.
將包含感光性樹脂之油墨塗佈成膜於前述基台上之後通常係進行預烘烤。藉由例如80至110℃之溫度、60秒至180秒加熱基台2而進行預烘烤，並除去溶媒(參考第3B圖)。The ink containing the photosensitive resin is usually pre-baked after being coated on the aforementioned substrate. The base 2 is heated by, for example, a temperature of 80 to 110 ° C for 60 seconds to 180 seconds, and the solvent is removed (refer to Fig. 3B).
接著將遮住預定圖案之光之光罩21配置於基台2上，並透過該光罩21而曝光分隔壁形成用膜8。感光性樹脂有正型和負型之樹脂，但在本步驟可使用任何一種樹脂。使用正型之感光性樹脂時，在分隔壁形成用膜8中主要照射光於應該形成分隔壁3之部位以外之殘餘部位。此外，使用負型之感光性樹脂時，在分隔壁形成用膜8中，主要照射光於應該形成分隔壁3之部位。在本步驟中就使用負型之感光性樹脂之情形，參考第3C圖而說明。正如第3C圖所示，在形成分隔壁形成用膜8之基板上配置光罩21，並透過該光罩21而照射光，藉此在分隔壁形成用膜8中之主要應該形成分隔壁3之部位照射光。此外，在第3C圖中，藉由箭號記號而示意地表示照射於分隔壁形成用膜8之光。Then, the photomask 21 that blocks the light of the predetermined pattern is placed on the base 2, and the film for forming the partition wall 8 is exposed through the photomask 21. The photosensitive resin has a positive type and a negative type of resin, but any one of the resins may be used in this step. When a positive-type photosensitive resin is used, the partition wall forming film 8 is mainly irradiated with a residual portion other than the portion where the partition wall 3 should be formed. Further, when a negative-type photosensitive resin is used, the partition wall forming film 8 is mainly irradiated with light at a portion where the partition wall 3 should be formed. In the case where a negative photosensitive resin is used in this step, it will be described with reference to Fig. 3C. As shown in Fig. 3C, the mask 21 is placed on the substrate on which the partition wall forming film 8 is formed, and the light is transmitted through the mask 21, whereby the partition wall 3 should be mainly formed in the partition wall forming film 8. The part is illuminated by light. In addition, in FIG. 3C, the light irradiated to the partition wall forming film 8 is schematically indicated by an arrow symbol.
接著顯影曝光之分隔壁形成用膜8。藉此使分隔壁3形成圖案(參考第4A圖)。顯影後視其必要而進行後烘烤(post-bake)。例如藉由在200℃至230℃之溫度、15分鐘至60分鐘加熱基台而進行後烘烤並硬化分隔壁3。Next, the film 8 for partition wall formation which is exposed and exposed is developed. Thereby, the partition wall 3 is patterned (refer to FIG. 4A). After development, post-bake is performed as necessary. The partition wall 3 is post-baked and hardened, for example, by heating the abutment at a temperature of 200 ° C to 230 ° C for 15 minutes to 60 minutes.
形成分隔壁所使用之感光性樹脂有負型和正型。The photosensitive resin used to form the partition has a negative type and a positive type.
負型之感光性樹脂係照射光之部位對於顯影液呈不溶化而殘留者。The negative photosensitive resin is a portion where the light is irradiated and remains insoluble in the developer.
包含感光性樹脂之油墨一般係調配黏合劑樹脂、交聯劑、光反應起始劑、溶媒以及其他之添加劑。The ink containing the photosensitive resin is generally formulated with a binder resin, a crosslinking agent, a photoreaction initiator, a solvent, and other additives.
黏合劑樹脂係預先聚合者。其例子可列舉不具有自我聚合性之非聚合性黏合劑樹脂、導入具有聚合性之取代基之聚合性黏合劑樹脂。以聚苯乙烯為標準而藉由凝膠滲透色譜法(GPC)所求出黏合劑樹脂之重量平均分子量為5,000至400,000之範圍。The binder resin is prepolymerized. Examples thereof include a non-polymerizable binder resin which does not have self-polymerization property, and a polymerizable binder resin which introduces a polymerizable substituent. The weight average molecular weight of the binder resin determined by gel permeation chromatography (GPC) on the basis of polystyrene is in the range of 5,000 to 400,000.
黏合劑樹脂可列舉例如酚樹脂、酚醛清漆樹脂(novolac resin)、三聚氰胺樹脂(melamine resin)、丙烯酸系樹脂、環氧樹脂、聚酯樹脂等。黏合劑樹脂可使用均聚物(homopolymer)與組合2種以上單體之共聚物任何一種。相對於包含前述感光性樹脂之油墨之總固形份，黏合劑樹脂以質量分率通常為5%至90%。Examples of the binder resin include a phenol resin, a novolac resin, a melamine resin, an acrylic resin, an epoxy resin, a polyester resin, and the like. As the binder resin, any one of a homopolymer and a copolymer of two or more kinds of monomers may be used. The binder resin is usually in a mass fraction of 5% to 90% with respect to the total solid content of the ink containing the aforementioned photosensitive resin.
交聯劑係可藉由光照射而以光聚合起始劑產生之活性自由基、酸等而進行聚合之化合物，可列舉例如具有聚合性碳-碳不飽和鍵之化合物。交聯劑係可為在分子內具有1個聚合性碳-碳不飽和鍵之單官能化合物，也可為具有2個以上聚合性碳-碳不飽和鍵之2官能或3官能以上之多官能化合物。在包含前述感光性樹脂之油墨中，在黏合劑樹脂和交聯劑之合計量為100質量份時，交聯劑通常為0.1質量份以上、70質量份以下。此外，在包含前述感光性樹脂之油墨中，在黏合劑樹脂和交聯劑之合計量為100質量份時，光聚合起始劑通常為1質量份以上、30質量份以下。The crosslinking agent is a compound which can be polymerized by active irradiation, an acid, or the like generated by a photopolymerization initiator by light irradiation, and examples thereof include a compound having a polymerizable carbon-carbon unsaturated bond. The crosslinking agent may be a monofunctional compound having one polymerizable carbon-carbon unsaturated bond in the molecule, or a bifunctional or trifunctional or higher functional group having two or more polymerizable carbon-carbon unsaturated bonds. Compound. In the ink containing the photosensitive resin, when the total amount of the binder resin and the crosslinking agent is 100 parts by mass, the crosslinking agent is usually 0.1 parts by mass or more and 70 parts by mass or less. In the ink containing the photosensitive resin, when the total amount of the binder resin and the crosslinking agent is 100 parts by mass, the photopolymerization initiator is usually 1 part by mass or more and 30 parts by mass or less.
另一方面，正型感光性樹脂係光之照射部份相對於顯影液呈可溶化者。正型感光性樹脂係一般藉由將樹脂與以光反應進行親水化之化合物複合化而構成。On the other hand, the positive photosensitive resin-based irradiated portion of the light is soluble with respect to the developer. The positive photosensitive resin is generally composed of a composite of a resin and a compound which is hydrophilized by photoreaction.
正型感光性樹脂係可使用將酚醛清漆樹脂、聚羥基苯乙烯、丙烯酸系樹脂、甲基丙烯酸系樹脂、聚醯亞胺(polyimide)等具有耐藥品性和密著性之樹脂與光分解性化合物組合者。For the positive photosensitive resin, a resin having chemical resistance and adhesion such as a novolac resin, a polyhydroxystyrene, an acrylic resin, a methacrylic resin, or a polyimide can be used, and photodegradability can be used. Compound combination.
可調配於包含感光性樹脂之油墨之添加劑係列舉例如在分隔壁賦予疏液性之材料。可在本步驟使用之賦予疏液性之材料(疏液劑)可列舉例如含氟化合物、含聚矽氧(silicone)化合物等。較佳為對於有機溶劑也顯示良好疏液性之含氟化合物。A series of additives which can be incorporated in an ink containing a photosensitive resin, for example, a material which imparts lyophobicity to a partition wall. The material (the lyophobic agent) which can be used for the lyophobic property which can be used in this step can, for example, be a fluorine-containing compound or a polysiloxane-containing compound. A fluorine-containing compound which exhibits good lyophobicity for an organic solvent is preferred.
含氟化合物可列舉例如具有碳原子數1至8之直鏈狀或分支狀氟烷基及/或氟化聚醚基之化合物。含氟化合物較佳為具有交聯性基之聚合物，更佳為具有碳原子數4至6之氟烷基及/或氟化聚醚基、且具有交聯性基之聚合物。此外，含氟化合物較佳為對於顯影液具有可溶性機能。含氟化合物係只要為可在形成分隔壁後於分隔壁表面賦予疏液性者即可，並不限定於聚合物，可為低分子化合物。The fluorine-containing compound may, for example, be a compound having a linear or branched fluoroalkyl group having 1 to 8 carbon atoms and/or a fluorinated polyether group. The fluorine-containing compound is preferably a polymer having a crosslinkable group, more preferably a polymer having a fluoroalkyl group having 4 to 6 carbon atoms and/or a fluorinated polyether group and having a crosslinkable group. Further, the fluorine-containing compound preferably has a solubility function for the developer. The fluorine-containing compound is not limited to a polymer, and may be a low molecular compound as long as it can provide liquid repellency to the surface of the partition wall after forming the partition wall.
交聯性基係在含氟化合物賦予交聯性機能者，可例舉乙烯性不飽和鍵結基及環氧基、氫氧基等。如果具有與使用在分隔壁形成之感光性樹脂交聯之機能，則交聯性基之種類係並非限定於前述者。The crosslinkable group may be an ethylenically unsaturated bond group, an epoxy group or a hydroxyl group, etc., in the case where the crosslinking property is imparted to the fluorine-containing compound. The type of crosslinkable group is not limited to the above if it has a function of crosslinking with a photosensitive resin formed on the partition wall.
疏液劑可列舉例如Megaface RS-101、RS-102、RS-105、RS-401、RS-402、RS-501、RS-502、RS-718(以上為DIC公司製)、OPTOOL DAC、OPTOACE HP系列(以上為Daikin工業公司製)、全氟(甲基)丙烯酸酯、全氟二(甲基)丙烯酸酯等。Examples of the lyophobic agent include Megaface RS-101, RS-102, RS-105, RS-401, RS-402, RS-501, RS-502, RS-718 (all manufactured by DIC Corporation), OPTOOL DAC, and OPTOACE. HP series (above, manufactured by Daikin Industries, Inc.), perfluoro(meth)acrylate, perfluorodi(meth)acrylate, and the like.
前述疏液劑可單獨使用1種，也可組合2種以上使用。相對於包含前述感光性樹脂之油墨之總固形份，疏液劑以質量分率通常為0.1質量份以上、3質量份以下。The lyophobic agent may be used singly or in combination of two or more. The lyophobic agent is usually used in an amount of 0.1 part by mass or more and 3 parts by mass or less based on the total solid content of the ink containing the photosensitive resin.
使用於顯影之顯影液可列舉例如氯化鉀水溶液、氫氧化四甲基銨(TMAH)水溶液等。The developing solution used for development may, for example, be an aqueous solution of potassium chloride or an aqueous solution of tetramethylammonium hydroxide (TMAH).
分隔壁3之形狀及其配置係配合像素數及解析度等顯示裝置之規格或製造之容易度等而適宜地設定。例如分隔壁3之行方向X或列方向Y之寬係5μm至50μm程度，分隔壁3之高度係0.5μm至5μm程度，相鄰接於行方向X或列方向Y之分隔壁3間之間隔，即凹部5之行方向X或列方向Y之寬係10μm至200μm程度。此外，第1電極6之行方向X或列方向Y之寬分別為10μm至200μm程度。The shape and arrangement of the partition wall 3 are appropriately set in accordance with the specifications of the display device such as the number of pixels and the resolution, the ease of manufacture, and the like. For example, the width X of the partition wall 3 or the width of the column direction Y is about 5 μm to 50 μm, and the height of the partition wall 3 is about 0.5 μm to 5 μm, and the interval between the partition walls 3 adjacent to the row direction X or the column direction Y is adjacent. That is, the width direction X of the concave portion 5 or the width of the column direction Y is about 10 μm to 200 μm. Further, the width of the row direction X or the column direction Y of the first electrode 6 is about 10 μm to 200 μm, respectively.
在本步驟，在前述第1電極6中，於前述分隔壁3之端部3a所覆蓋之部位以外之殘餘部位與該殘餘部位之周邊部之表面形成凹陷(參考第4B圖)。也就是說，在本步驟，由前述基台2之厚度方向之一邊來看，在前述分隔壁3之端部3a所覆蓋之部位以外之殘餘部位6a以及該殘餘部位之周邊部6b形成凹陷，此凹陷係於較前述分隔壁3之端部3a與前述第1電極6之界面11更接近於基台側。(參考第1圖)。In this step, in the first electrode 6, the remaining portion other than the portion covered by the end portion 3a of the partition wall 3 and the surface of the peripheral portion of the remaining portion are recessed (refer to FIG. 4B). That is, in this step, the residual portion 6a other than the portion covered by the end portion 3a of the partition wall 3 and the peripheral portion 6b of the remaining portion are recessed as viewed from one side in the thickness direction of the base 2, This recess is closer to the base side than the interface 11 between the end portion 3a of the partition wall 3 and the first electrode 6. (Refer to Figure 1).
具體來說可利用第1電極6上之分隔壁3作為遮罩而在第1電極6施行等方性蝕刻，藉此在第1電極6之表面形成凹陷，同時可對於利用作為遮罩之分隔壁3之正下方進行底切(undercut)底切。Specifically, the partition wall 3 on the first electrode 6 can be used as a mask to perform the isotropic etching on the first electrode 6, thereby forming a recess on the surface of the first electrode 6, and can be used as a mask. An undercut is performed directly under the partition 3.
蝕刻有濕式蝕刻法及乾式蝕刻法，但較佳為濕式蝕刻法。乾式蝕刻法中也蝕刻分隔壁3，或是也在表面堆積反應生成物。另一方面，在濕式蝕刻法中，容易由分隔壁3開始選擇性地蝕刻第1電極6，且不削切前述殘餘部位之周邊部上之分隔壁3，可在前述殘餘部位之周邊部形成凹陷，故為較佳。藉由進行如此之蝕刻，而可對於分隔壁3之端部3a之下面進行所謂底切。The etching is performed by a wet etching method or a dry etching method, but is preferably a wet etching method. The partition wall 3 is also etched in the dry etching method, or the reaction product is also deposited on the surface. On the other hand, in the wet etching method, the first electrode 6 is easily etched selectively by the partition wall 3, and the partition wall 3 on the peripheral portion of the remaining portion is not cut, and the peripheral portion of the remaining portion can be formed. It is preferred to form a depression. By performing such etching, so-called undercut can be performed on the lower surface of the end portion 3a of the partition wall 3.
在藉由濕式蝕刻法而蝕刻例如ITO(Indium Tin Oxide：銦錫氧化物)薄膜時，可使用鹽酸和氯化鐵溶液之混合溶液、及鹽酸和硝酸之混合溶液進行蝕刻。此外，例如在蝕刻IZO(Indium Zinc Oxide：銦鋅氧化物)時，可使用磷酸、硝酸和乙酸之混合溶液而進行蝕刻。When an ITO (Indium Tin Oxide) thin film is etched by a wet etching method, a mixed solution of hydrochloric acid and a ferric chloride solution, and a mixed solution of hydrochloric acid and nitric acid can be used for etching. Further, for example, when IZO (Indium Zinc Oxide) is etched, etching can be performed using a mixed solution of phosphoric acid, nitric acid, and acetic acid.
乾式蝕刻法係列舉例如在反應氣體中曝露材料之方法(反應性氣體蝕刻)、及藉由電漿而離子化‧自由基化氣體並進行蝕刻之反應性離子蝕刻等。使用於乾式蝕刻法之氟系氣體可列舉例如CF4、CHF3、CH2F2、C3F8、C4F6、C4F8等。Examples of the dry etching method include, for example, a method of exposing a material in a reaction gas (reactive gas etching), and reactive ion etching by ionizing a ‧ radicalized gas by plasma and etching it. Examples of the fluorine-based gas used in the dry etching method include CF 4 , CHF 3 , CH 2 F 2 , C 3 F 8 , C 4 F 6 , C 4 F 8 and the like.
可藉由像這樣施行蝕刻，而可在第1電極6中，在前述分隔壁之端部所覆蓋之部位以外之殘餘部位和該殘餘部位之周邊部(也就是殘餘部位附近之外側區域)之表面形成凹陷。此外，此凹陷係可在第1電極中，涵蓋前述分隔壁之端部所覆蓋之部位以外之殘餘部位和該殘餘部位之周邊部之表面而設置，並在每一個第1電極6分別設置一個。By performing etching as described above, in the first electrode 6, the remaining portion other than the portion covered by the end portion of the partition wall and the peripheral portion of the remaining portion (that is, the outer side region near the residual portion) can be The surface forms a depression. Further, the recess may be provided in the first electrode, covering a remaining portion other than the portion covered by the end portion of the partition wall and a surface of the peripheral portion of the residual portion, and each of the first electrodes 6 is provided with one .
此外，可分2次進行分隔壁形成用膜8之後烘烤，在第1次後烘烤和第2次後烘烤之間進行前述蝕刻。Further, the film for forming the partition wall 8 can be baked twice, and the etching can be performed between the first post-baking and the second post-baking.
此時，較佳為使第1次後烘烤之第1溫度和第2次後烘烤之第2溫度不同。具體地說，較佳為第1溫度低於第2溫度。此外，第2溫度係可確實地硬化分隔壁3之溫度，第1溫度係低於可確實地硬化分隔壁3溫度之溫度。例如藉由在110℃加熱3分鐘而進行第1後烘烤。若以此條件進行第1次後烘烤，則形成和第1電極6之密著性弱之分隔壁3。若在第1電極6和分隔壁3之密著性弱之狀態下施行前述蝕刻，則在第1電極6和分隔壁3之界面容易浸透蝕刻液，即使是等方性蝕刻，在分隔壁3的下面，橫方向蝕刻也變得容易進行，可形成更寬之底切。In this case, it is preferable that the first temperature of the first post-baking and the second temperature of the second post-baking are different. Specifically, it is preferable that the first temperature is lower than the second temperature. Further, the second temperature system can surely harden the temperature of the partition wall 3, and the first temperature system is lower than the temperature at which the temperature of the partition wall 3 can be surely hardened. The first post-baking is performed, for example, by heating at 110 ° C for 3 minutes. When the first post-baking is performed under such conditions, the partition wall 3 having weak adhesion to the first electrode 6 is formed. When the etching is performed in a state where the adhesion between the first electrode 6 and the partition wall 3 is weak, the etching liquid is easily permeated at the interface between the first electrode 6 and the partition wall 3, and even if it is isotropically etched, the partition wall 3 is formed. Underneath, the lateral etching also becomes easier, and a wider undercut can be formed.
像這樣於第1溫度進行後烘烤時，可在蝕刻後以通常之後烘烤條件，也就是在第2溫度進行後烘烤，藉此而確實地硬化分隔壁3。可藉此而形成基台和第1電極之密著性強之分隔壁3。When post-baking is performed at the first temperature as described above, post-baking can be performed after the etching under normal post-baking conditions, that is, at the second temperature, whereby the partition wall 3 is surely cured. Thereby, the partition wall 3 having strong adhesion between the base and the first electrode can be formed.
第1次後烘烤條件較佳為第1溫度為100℃至120℃、加熱時間為2分鐘至10分鐘，第2次後烘烤條件較佳為第2溫度為200℃至230℃、加熱時間為15分鐘至60分鐘。The first post-baking condition is preferably that the first temperature is from 100 ° C to 120 ° C, the heating time is from 2 minutes to 10 minutes, and the second post-baking condition is preferably that the second temperature is from 200 ° C to 230 ° C. The time is 15 minutes to 60 minutes.
凹陷之深度LD(參考第4B圖)較佳為20nm至300nm。此外，在平面俯視之第1電極6之凹陷之前述周邊部(也就是在第1電極中，分隔壁之端部所覆蓋之部位以外之殘餘部位之周邊部6b；參考第1圖。)的寬通常為20nm至2μm，較佳為20nm至1μm(在此，該周邊部的寬係指由基台之厚度方向之一邊來看時之周邊部的寬。例如在藉由分隔壁之端部而覆蓋第1電極之全周邊部之第2圖之形態中，係指沿著行方向X之寬及沿著列方向Y之寬，在藉由分隔壁之端部而覆蓋第1電極之4邊中相對向之2邊之第6圖之形態，係指沿著行方向X之寬。)。The depth LD of the recess (refer to FIG. 4B) is preferably from 20 nm to 300 nm. Further, the peripheral portion of the recess of the first electrode 6 in plan view (that is, the peripheral portion 6b of the remaining portion other than the portion covered by the end portion of the partition wall in the first electrode; see Fig. 1) The width is usually 20 nm to 2 μm, preferably 20 nm to 1 μm (herein, the width of the peripheral portion refers to the width of the peripheral portion when viewed from one side of the thickness direction of the base. For example, by the end of the partition wall In the form of the second figure covering the entire peripheral portion of the first electrode, the width of the row along the width X and the width of the column Y are covered, and the first electrode is covered by the end of the partition wall. The form of Figure 6 on the opposite side of the edge refers to the width along the row direction X.).
在本步驟中，在前述之第1電極上形成至少一層之有機層。以下就在第1電極上形成二層之有機層之實施形態來進行說明。在本步驟中藉由塗佈法而形成至少一層之有機層。在本實施形態中，藉由塗佈法而形成第1有機層7及第2有機層9。In this step, at least one organic layer is formed on the first electrode described above. Hereinafter, an embodiment in which a two-layer organic layer is formed on the first electrode will be described. In this step, at least one organic layer is formed by a coating method. In the present embodiment, the first organic layer 7 and the second organic layer 9 are formed by a coating method.
首先將包含成為第1有機層7之材料之油墨22供給至分隔壁3所包圍之區域(凹部5)(參考第4C圖)。油墨係考量分隔壁3之形狀、成膜步驟之簡易度、以及成膜性等之條件，而藉由最適當方法而適度地供給。油墨係例如可藉由噴墨印刷法、噴嘴塗佈法、凸版印刷法及凹版印刷法等而供給。First, the ink 22 including the material of the first organic layer 7 is supplied to a region (recess 5) surrounded by the partition wall 3 (refer to FIG. 4C). The ink is appropriately supplied by the most appropriate method in consideration of the shape of the partition wall 3, the ease of the film formation step, and the film forming property. The ink can be supplied, for example, by an inkjet printing method, a nozzle coating method, a letterpress printing method, a gravure printing method, or the like.
接著，藉由固化所供給之油墨22而形成第1有機層7(參考第5A圖)。油墨之固化係可藉由例如自然乾燥、加熱乾燥、真空乾燥而進行。此外，油墨含有藉由加以能量而聚合之材料時，可在供給油墨後，藉由加熱薄膜或是在薄膜照射光而聚合構成有機層之材料。藉由像這樣聚合構成有機層之材料，可使第1有機層難溶化於在該有機層(以下稱為「第1有機層」。)上形成其他之有機層(以下稱為「第2有機層」。)時所使用之油墨。Next, the first organic layer 7 is formed by curing the supplied ink 22 (refer to FIG. 5A). The curing of the ink can be carried out, for example, by natural drying, heat drying, and vacuum drying. Further, when the ink contains a material polymerized by energy, the material constituting the organic layer may be polymerized by heating the film or irradiating the film with light after the ink is supplied. By polymerizing the material constituting the organic layer as described above, the first organic layer can be hardly dissolved, and another organic layer can be formed on the organic layer (hereinafter referred to as "the first organic layer") (hereinafter referred to as "the second organic layer" The ink used in the layer.).
供給至分隔壁3所包圍之區域(凹部5)之油墨22係藉由毛細管現象而吸入至分隔壁3之端部3a和第1電極6之間之間隙31，並且氣化溶媒而薄膜化。如此藉由毛細管現象而可防止油墨彈開至分隔壁3，因此即使是分隔壁3具有疏液性，也可防止分隔壁3附近之第1有機層7比起中央部還更為薄膜化。藉此而可形成平坦之第1有機層7。The ink 22 supplied to the region (recess 5) surrounded by the partition wall 3 is sucked into the gap 31 between the end portion 3a of the partition wall 3 and the first electrode 6 by capillary action, and is vaporized by a solvent. Thus, the capillary phenomenon prevents the ink from being bounced to the partition wall 3. Therefore, even if the partition wall 3 has liquid repellency, the first organic layer 7 in the vicinity of the partition wall 3 can be prevented from being thinner than the central portion. Thereby, the flat first organic layer 7 can be formed.
接著，形成發揮作為發光層機能之第2有機層9。第2有機層9係可以與第1有機層7相同方式而形成。也就是說，可藉由將包含成為紅色發光層9之材料之油墨、包含成為綠色發光層9之材料之油墨、和包含成為藍色發光層9之材料之油墨之3種類之油墨，分別供給至分隔壁3所包圍之區域並固化該等，藉此而形成各發光層9。Next, a second organic layer 9 functioning as a light-emitting layer is formed. The second organic layer 9 can be formed in the same manner as the first organic layer 7. That is, it can be supplied separately by using three types of inks including an ink which is a material of the red light-emitting layer 9, an ink containing a material which becomes the green light-emitting layer 9, and an ink containing a material which becomes a material of the blue light-emitting layer 9. Each of the light-emitting layers 9 is formed by the region surrounded by the partition wall 3 and curing.
相同於前述之第1有機層7，可以藉由來自於分隔壁3之端部3a和第1電極6之間之間隙31之毛細管現象，而即使是分隔壁3具有疏液性，也可以形成平坦之第2有機層9。Similarly to the first organic layer 7 described above, the capillary phenomenon from the gap 31 between the end portion 3a of the partition wall 3 and the first electrode 6 can be formed even if the partition wall 3 has liquid repellency. The second organic layer 9 is flat.
本步驟中，在前述有機層上形成至少一層之第2電極。以下就在有機層上形成一層之第2電極之實施形態來說明。在本實施形態中，第2電極10係形成在設置有機EL元件4之顯示區域整面。也就是說，第2電極10係不僅形成於第2有機層9上，並且也形成於分隔壁3上，涵蓋複數有機EL元件而連續地形成。藉由像這樣形成第2電極，而設置機能為在全部有機EL元件4共通之電極之第2電極10。In this step, at least one second electrode is formed on the organic layer. Hereinafter, an embodiment in which a second electrode of one layer is formed on an organic layer will be described. In the present embodiment, the second electrode 10 is formed on the entire surface of the display region where the organic EL element 4 is provided. In other words, the second electrode 10 is formed not only on the second organic layer 9, but also on the partition wall 3, and is formed continuously covering the plurality of organic EL elements. By forming the second electrode as described above, the second electrode 10 having the function of the electrode common to all the organic EL elements 4 is provided.
正如以上之說明，可藉由在第1電極6形成凹陷，並在分隔壁3之端部3和第1電極6之間設置間隙31，而形成平坦之有機層。在先前技術中，藉由設置間隔部而在分隔壁3之端部3和第1電極6之間設置間隙31，但在本實施形態中，可僅藉由在第1電極6形成凹陷，而在分隔壁3之端部3和第1電極6之間形成間隙31，可不追加裝置之構造，並可藉由簡易之裝置構造而形成平坦之有機層。As described above, a flat organic layer can be formed by forming a recess in the first electrode 6 and providing a gap 31 between the end portion 3 of the partition wall 3 and the first electrode 6. In the prior art, the gap 31 is provided between the end portion 3 of the partition wall 3 and the first electrode 6 by providing the partition portion. However, in the present embodiment, the recess can be formed only by the first electrode 6. A gap 31 is formed between the end portion 3 of the partition wall 3 and the first electrode 6, so that the structure of the device can be omitted, and a flat organic layer can be formed by a simple device structure.
以上就設置格子狀之分隔壁之形態之顯示裝置而說明，但正如前述，也可在基台上設置條紋狀之分隔壁。第6圖係擴大而示意地表示設置條紋狀之分隔壁之本實施形態之顯示裝置之一部份的俯視圖。在同圖中，影線區域係相當於分隔壁3。第7圖係顯示以垂直於行方向X之平面切斷顯示裝置之顯示裝置的剖面形狀。此外以垂直於列方向Y之平面切斷顯示裝置之顯示裝置的剖面形狀係相同於第1圖。此外，本實施形態之顯示裝置其構造幾乎共通於前述實施形態之顯示裝置，因此以下僅就不同之部份進行說明，相對應之部份則附加相同之參考符號，並省略重複之說明。Although the display device in the form of a lattice-shaped partition wall is described above, as described above, a stripe-shaped partition wall may be provided on the base. Fig. 6 is a plan view showing, in an enlarged manner, a part of a display device of the embodiment in which stripe-shaped partition walls are provided. In the same figure, the hatched area corresponds to the partition wall 3. Fig. 7 is a view showing the sectional shape of the display device which cuts the display device in a plane perpendicular to the row direction X. Further, the cross-sectional shape of the display device in which the display device is cut in a plane perpendicular to the column direction Y is the same as in FIG. In the display device of the present embodiment, the structure of the display device is substantially the same as that of the above-described embodiment. Therefore, the same reference numerals will be given to the corresponding parts, and the duplicated description will be omitted.
在設置條紋狀之分隔壁時，分隔壁係例如由延在於列方向Y之複數條分隔壁構件而構成。該分隔壁構件係在行方向X空出預定之間隔而進行配置。在設置條紋狀之分隔壁之形態中，藉由條紋狀之分隔壁和基台而規定條紋狀之凹部。When the striped partition wall is provided, the partition wall is constituted by, for example, a plurality of partition wall members extending in the column direction Y. The partition wall members are disposed at predetermined intervals in the row direction X. In the form in which the striped partition walls are provided, the strip-shaped recesses are defined by the stripe-shaped partition walls and the base.
在設置條紋狀之分隔壁時，有機EL元件4係在延在於列方向Y之各凹部中，於列方向Y分別空出預定之間隔而進行配置。When the stripe-shaped partition walls are provided, the organic EL elements 4 are arranged in the respective recesses extending in the column direction Y, and are arranged at predetermined intervals in the column direction Y.
第1電極6係相同於前述實施形態而呈矩陣狀地進行配置。分隔壁3其端部3a以覆蓋第1電極6之行方向X之一邊之端部和其他邊之端部之方式形成(參考第1圖)。此外正如第7圖所示，在本實施形態中，第1電極6之列方向Y之端部並無藉由分隔壁而覆蓋。The first electrodes 6 are arranged in a matrix in the same manner as in the above embodiment. The end portion 3a of the partition wall 3 is formed so as to cover the end portion of one side of the row direction X of the first electrode 6 and the other end portions (refer to Fig. 1). Further, as shown in Fig. 7, in the present embodiment, the end portion of the columnar direction Y of the first electrode 6 is not covered by the partition wall.
在本實施形態中，第1有機層7及第2有機層9係分別延在於在列方向Y延在之各凹部而形成，並以涵蓋複數有機EL元件而連接之方式形成。In the present embodiment, the first organic layer 7 and the second organic layer 9 are formed so as to extend in the respective recesses in the column direction Y, and are formed so as to cover the plurality of organic EL elements.
正如第1圖所示，本實施形態中，相同於前述之實施形態，第1電極6在除去前述分隔壁之端部所覆蓋之部位以外之殘餘部位6a以及該殘餘部位之周邊部6b具有凹陷，由前述基台厚度方向之一邊來看，此凹陷係於較前述分隔壁端部3a與前述第1電極6之界面11更接近於基台側。。藉由形成此種凹陷，而在分隔壁3之端部3a和第1電極6之間形成預定之間隙31。藉此以與前述實施形態同樣方式而形成平坦之有機層。As shown in Fig. 1, in the present embodiment, in the same manner as the above-described embodiment, the first electrode 6 has a recessed portion 6a other than the portion covered by the end portion of the partition wall and the peripheral portion 6b of the remaining portion. The recess is closer to the base side than the interface 11 between the partition wall end portion 3a and the first electrode 6 as viewed in one of the thickness directions of the base. . By forming such a recess, a predetermined gap 31 is formed between the end portion 3a of the partition wall 3 and the first electrode 6. Thereby, a flat organic layer is formed in the same manner as in the above embodiment.
以下就有機EL元件之構造而更詳細地說明。有機EL元件具有至少一層之發光層作為有機層。正如前述，有機EL元件係可在一對之電極間具有例如電洞注入層、電洞輸送層、電子阻擋層、電洞阻擋層、電子輸送層和電子注入層等。Hereinafter, the structure of the organic EL element will be described in more detail. The organic EL element has at least one light-emitting layer as an organic layer. As described above, the organic EL element may have, for example, a hole injection layer, a hole transport layer, an electron blocking layer, a hole blocking layer, an electron transport layer, an electron injection layer, and the like between a pair of electrodes.
以下顯示本實施形態之有機EL元件之可得之層構造之一例。An example of a layer structure which can be obtained by the organic EL device of the present embodiment is shown below.
a)陽極/發光層/陰極a) anode / luminescent layer / cathode
b)陽極/電洞注入層/發光層/陰極b) anode / hole injection layer / luminescent layer / cathode
c)陽極/電洞注入層/發光層/電子注入層/陰極c) anode / hole injection layer / luminescent layer / electron injection layer / cathode
d)陽極/電洞注入層/發光層/電子輸送層/電子注入層/陰極d) anode/hole injection layer/light-emitting layer/electron transport layer/electron injection layer/cathode
e)陽極/電洞注入層/電洞輸送層/發光層/陰極e) anode/hole injection layer/hole transport layer/light-emitting layer/cathode
f)陽極/電洞注入層/電洞輸送層/發光層/電子注入層/陰極f) anode/hole injection layer/hole transport layer/light-emitting layer/electron injection layer/cathode
g)陽極/電洞注入層/電洞輸送層/發光層/電子輸送層/電子注入層/陰極g) anode/hole injection layer/hole transport layer/light-emitting layer/electron transport layer/electron injection layer/cathode
h)陽極/發光層/電子注入層/陰極h) anode / luminescent layer / electron injection layer / cathode
i)陽極/發光層/電子輸送層/電子注入層/陰極i) anode / luminescent layer / electron transport layer / electron injection layer / cathode
(在此，符號「/」係表示夾住符號「/」之各層相鄰接而進行層積。以下亦相同。)(Here, the symbol "/" means that the layers sandwiching the symbol "/" are adjacent to each other and stacked. The same applies hereinafter.)
本實施形態之有機EL元件係可具有2層以上之發光層。在前述a)至i)之層構造中之任何一種中，若使夾住於陽極和陰極之層積體為「構造單位A」，則具有2層發光層之有機EL元件之構造係可列舉例如以下之j)所示之層構造。此外，2個(構造單位A)之層構造係可彼此相同或相異。The organic EL device of the present embodiment may have two or more light-emitting layers. In the layer structure of the above-mentioned a) to i), when the layered body sandwiched between the anode and the cathode is "structural unit A", the structure of the organic EL element having two light-emitting layers can be exemplified. For example, the layer structure shown in the following j). Further, the layer structures of the two (structural unit A) may be identical or different from each other.
j)陽極/(構造單位A)/電荷產生層/(構造單位A)/陰極j) Anode / (structural unit A) / charge generation layer / (structural unit A) / cathode
在此，電荷產生層係藉由施加電場而產生電洞和電子之層。Here, the charge generating layer generates a layer of holes and electrons by applying an electric field.
電荷產生層可列舉例如由氧化釩、銦錫氧化物(Indium Tin Oxide：簡稱ITO)、銦鋅氧化物(Indium Zinc Oxide：簡稱IZO)、氧化鉬等而成之薄膜。The charge generating layer may, for example, be a film made of vanadium oxide, indium tin oxide (ITO), indium zinc oxide (Indium Zinc Oxide: IZO), molybdenum oxide or the like.
此外，若使「(構造單位A)/電荷產生層」為「構造單位B」，具有3層以上之發光層之有機EL元件之構造係可列舉例如以下之k)所示之層構造。In addition, the structure of the organic EL element having three or more light-emitting layers, for example, the layer structure shown in the following k), may be mentioned as the "structural unit B".
k)陽極/(構造單位B)×/(構造單位A)/陰極k) anode / (structural unit B) × / (structural unit A) / cathode
此外，符號「×」表示2以上之整數，(構造單位B)×係表示層積×段之構造單位B之層積體。此外，複數(構造單位B)之層構造係可相同或相異。Further, the symbol "x" represents an integer of 2 or more, and (structural unit B) × represents a layered body of the structural unit B of the layered × segment. Further, the layer structures of the plural (structural unit B) may be the same or different.
此外，可構成不設置電荷產生層、而直接地層積複數發光層之有機EL元件。Further, an organic EL element in which a plurality of light-emitting layers are directly laminated without providing a charge generating layer can be formed.
基台適合使用在製造有機EL元件步驟中不會有化學變化者。基台之材料可列舉例如玻璃、塑膠、高分子薄膜和矽板、以及該等之層積體等。The abutment is suitable for use in the process of manufacturing an organic EL element without chemical changes. Examples of the material of the base include glass, plastic, polymer film and enamel, and laminates thereof.
由發光層放射之光通過陽極而射出至外界之構造之有機EL元件之情形，在陽極使用顯示光透過性之電極。顯示光透過性之電極可使用由金屬氧化物、金屬硫化物和金屬等之材料所成之薄膜，並適合使用電導率和光透過率高者。具體來說係使用由氧化銦、氧化鋅、氧化錫、ITO、銦鋅氧化物(Indium Zinc Oxide：簡稱IZO)、金、鉑、銀和銅等所成之薄膜，該等當中適合使用由ITO、IZO或氧化錫所成之薄膜。此外，陽極可具有層積2層以上之層積構造。陽極之製作方法可列舉例如真空蒸鍍法、濺鍍法、離子鍍法、鍍層法等。此外，該陽極可使用聚苯胺或其衍生物、聚噻吩或其衍生物等之有機透明導電膜。In the case where the light emitted from the light-emitting layer is emitted through the anode to the organic EL element of the external structure, an electrode exhibiting light transmittance is used at the anode. As the electrode which exhibits light transmittance, a film made of a material such as a metal oxide, a metal sulfide, or a metal can be used, and a conductivity and a light transmittance are preferably used. Specifically, a film made of indium oxide, zinc oxide, tin oxide, ITO, indium zinc oxide (Indium Zinc Oxide: IZO), gold, platinum, silver, copper, or the like is used, and among them, ITO, A film made of IZO or tin oxide. Further, the anode may have a laminated structure in which two or more layers are laminated. Examples of the method for producing the anode include a vacuum deposition method, a sputtering method, an ion plating method, and a plating method. Further, as the anode, an organic transparent conductive film of polyaniline or a derivative thereof, polythiophene or a derivative thereof, or the like can be used.
陰極之材料係較佳為功函數小、電子容易注入至發光層、且電導率高之材料。此外，由陽極側取出光之構造之有機EL元件中，為了將由發光層放射之光藉由陰極反射至陽極側，故陰極之材料較佳為對於可見光呈高反射率之材料。相關陰極之材料可列舉例如金屬、合金、石墨和石墨層間化合物。前述之金屬可列舉例如鹼金屬、鹼土類金屬、過渡金屬及週期表第13族金屬等，具體例可列舉鋰、鈉、鉀、銣、銫、鈹、鎂、鈣、鍶、鋇、鋁、鈧、釩、鋅、釔、銦、鈰、釤、銪、鋱、鐿等。前述之合金可列舉例如前述金屬中之2種以上金屬之合金；以及前述金屬中之1種以上和由金、銀、鉑、銅、錳、鈦、鈷、鎳、鎢、及錫所成群組選出1種以上金屬之合金等，具體例可列舉鎂-銀合金、鎂-銦合金、鎂-鋁合金、銦-銀合金、鋰-鋁合金、鋰-鎂合金、鋰-銦合金、鈣-鋁合金等。此外陰極可為透明電極，其材料可列舉例如氧化銦、氧化鋅、氧化錫、ITO和IZO等之導電性金屬氧化物；聚苯胺或其衍生物、聚噻吩或其衍生物等之導電性有機物。此外陰極可具有層積2層以上之層積構造。此外電子注入層可使用作為陰極。The material of the cathode is preferably a material having a small work function, easy electron injection into the light-emitting layer, and high electrical conductivity. Further, in the organic EL element having the structure in which light is taken out from the anode side, in order to reflect the light emitted from the light-emitting layer to the anode side by the cathode, the material of the cathode is preferably a material having high reflectance with respect to visible light. The material of the relevant cathode may, for example, be a metal, alloy, graphite, and graphite interlayer compound. Examples of the metal include an alkali metal, an alkaline earth metal, a transition metal, and a Group 13 metal of the periodic table. Specific examples thereof include lithium, sodium, potassium, rubidium, cesium, cesium, magnesium, calcium, strontium, barium, and aluminum. Antimony, vanadium, zinc, antimony, indium, antimony, bismuth, antimony, antimony, antimony, etc. Examples of the alloy include an alloy of two or more metals among the above metals; and one or more of the above metals and a group of gold, silver, platinum, copper, manganese, titanium, cobalt, nickel, tungsten, and tin. The alloy of one or more kinds of metals is selected, and specific examples thereof include magnesium-silver alloy, magnesium-indium alloy, magnesium-aluminum alloy, indium-silver alloy, lithium-aluminum alloy, lithium-magnesium alloy, lithium-indium alloy, and calcium. - Aluminum alloy, etc. Further, the cathode may be a transparent electrode, and examples of the material thereof include conductive metal oxides such as indium oxide, zinc oxide, tin oxide, ITO, and IZO; conductive organic compounds such as polyaniline or a derivative thereof, and polythiophene or a derivative thereof. . Further, the cathode may have a laminated structure in which two or more layers are laminated. Further, an electron injecting layer can be used as the cathode.
陰極之製作方法可列舉例如真空蒸鍍法、離子鍍法等。Examples of the method for producing the cathode include a vacuum deposition method, an ion plating method, and the like.
陽極或陰極之膜厚係考慮要求之特性及成膜步驟之簡易度等而適宜地設定，例如為10nm至10μm，較佳為20nm至1μm，更佳為50nm至500nm。The film thickness of the anode or the cathode is appropriately set in consideration of the required characteristics, the ease of the film formation step, and the like, and is, for example, 10 nm to 10 μm, preferably 20 nm to 1 μm, and more preferably 50 nm to 500 nm.
構成電洞注入層之電洞注入材料係可列舉例如氧化釩、氧化鉬、氧化釕和氧化鋁等之氧化物；苯胺系化合物；星爆型(starburst)胺系化合物；酞菁(phthalocyanine)系化合物；非晶質碳(amorphous carbon)；聚苯胺；以及聚噻吩衍生物等。The hole injecting material constituting the hole injection layer may, for example, be an oxide such as vanadium oxide, molybdenum oxide, cerium oxide or aluminum oxide; an aniline compound; a starburst amine compound; a phthalocyanine system; a compound; amorphous carbon; polyaniline; and a polythiophene derivative.
電洞注入層之成膜方法可列舉例如由包含電洞注入材料之溶液而成膜。例如將包含電洞注入材料之溶液以預定之塗佈法而塗佈成膜，並固化該等藉此而形成電洞注入層。The film formation method of the hole injection layer may, for example, be a film formed from a solution containing a hole injection material. For example, a solution containing a hole injecting material is applied as a film by a predetermined coating method, and cured to form a hole injecting layer.
電洞注入層之膜厚係考慮要求之特性及步驟之簡易度等而適宜地設定，例如為1nm至1μm，較佳為2nm至500nm，更佳為5nm至200nm。The film thickness of the hole injection layer is appropriately set in consideration of the required characteristics and the ease of the steps, etc., and is, for example, 1 nm to 1 μm, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.
構成電洞輸送層之電洞輸送材料可列舉例如聚乙烯基咔唑(polyvinylcarbazole)或其衍生物、聚矽烷或其衍生物、在側鏈或主鏈具有芳香族胺之聚矽氧烷衍生物、吡唑啉(pyrazoline)衍生物、芳基胺衍生物、芪(stilbene)衍生物、三苯基二胺衍生物、聚苯胺或其衍生物、聚噻吩或其衍生物、聚芳基胺或其衍生物、聚吡咯或其衍生物、聚(對伸苯基伸乙烯基)或其衍生物、或是聚(2,5-伸噻吩基伸乙烯基)或其衍生物等。Examples of the hole transporting material constituting the hole transporting layer include polyvinylcarbazole or a derivative thereof, polydecane or a derivative thereof, and a polyoxyalkylene derivative having an aromatic amine in a side chain or a main chain. a pyrazoline derivative, an arylamine derivative, a stilbene derivative, a triphenyldiamine derivative, a polyaniline or a derivative thereof, a polythiophene or a derivative thereof, a polyarylamine or A derivative thereof, polypyrrole or a derivative thereof, poly(p-phenylenevinylene) or a derivative thereof, or poly(2,5-thretended thiophenevinyl) or a derivative thereof.
電洞輸送層之膜厚係考慮要求之特性及成膜步驟之簡易度等而進行設定，例如為1nm至1μm，較佳為2nm至500nm，更佳為5nm至200nm。The film thickness of the hole transport layer is set in consideration of the required characteristics and the ease of the film formation step, and the like, for example, is 1 nm to 1 μm, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.
發光層通常主要包含發出螢光及/或磷光之有機物。發光層還可包含輔助該有機物之摻雜物。摻雜物係例如為了提高發光效率或改變發光波長而加入。此外，構成發光層之有機物係可為低分子化合物，也可為高分子化合物，藉由塗佈法而形成發光層時，較佳為包含高分子化合物。該高分子化合物之聚苯乙烯換算之數目平均分子量係例如為103至108程度。構成發光層之發光材料係可列舉例如以下之色素系材料、金屬錯合物系材料、高分子系材料、摻雜物材料。The luminescent layer typically comprises primarily organic matter that emits fluorescent and/or phosphorescent light. The luminescent layer can also include dopants that assist the organic species. The dopant is added, for example, to increase the luminous efficiency or to change the wavelength of the emission. Further, the organic substance constituting the light-emitting layer may be a low molecular compound or a polymer compound, and when the light-emitting layer is formed by a coating method, it is preferred to contain a polymer compound. The polystyrene-equivalent number average molecular weight of the polymer compound is, for example, about 10 3 to 10 8 . Examples of the light-emitting material constituting the light-emitting layer include the following pigment-based materials, metal-based compound materials, polymer-based materials, and dopant materials.
色素系材料係可列舉例如環戊丙甲胺(cyclopentamine)衍生物、四苯基丁二烯衍生物化合物、三苯基胺衍生物、噁二唑(oxadiazole)衍生物、吡唑喹啉(pyrazoloquinoline)衍生物、二苯乙烯基苯衍生物、二苯乙烯基伸芳基(distyrylarylene)衍生物、吡咯(Pyrrole)衍生物、噻吩環化合物、吡啶環化合物、紫環酮(perinone)衍生物、苝(perylene)衍生物、寡噻吩衍生物、噁二唑二聚物、吡唑啉二聚物(pyrazoline dimer)、喹吖酮(quinacridone)衍生物、香豆素(coumarin)衍生物等。Examples of the pigment-based material include a cyclopentamine derivative, a tetraphenylbutadiene derivative compound, a triphenylamine derivative, an oxadiazole derivative, and pyrazoloquinoline. a derivative, a distyrylbenzene derivative, a distyrylarylene derivative, a pyrrole derivative, a thiophene ring compound, a pyridine ring compound, a perinone derivative, hydrazine ( Perylene derivatives, oligothiophene derivatives, oxadiazole dimers, pyrazoline dimers, quinacridone derivatives, coumarin derivatives, and the like.
金屬錯合物系材料係可列舉例如稀土類金屬(例如Tb、Eu、Dy)、Al、Zn、Be、Ir、Pt等之中心金屬(central metal)和噁二唑、噻二唑、苯基吡啶、苯基苯并咪唑(phenylbenzoimidazole)、喹啉構造等具有配位基之金屬錯合物。相關金屬錯合物可列舉例如銥錯合物、鉑錯合物等之具有來自三重激發態之發光之金屬錯合物、鋁喹啉酚(alumium-quinolinol)錯合物、苯并喹啉酚鈹錯合物、苯并噁唑基鋅(benzooxazolyl zinc)錯合物、苯并噻唑鋅(benzothiazole zinc)錯合物、偶氮甲基鋅(azomethyl zinc)錯合物、卟啉鋅(porphyrin zinc)錯合物、啡啉銪(phenanthroline europium)錯合物等。Examples of the metal complex-based material include a rare earth metal (for example, Tb, Eu, Dy), a central metal such as Al, Zn, Be, Ir, and Pt, and an oxadiazole, a thiadiazole, and a phenyl group. A metal complex having a ligand such as pyridine, phenylbenzoimidazole or a quinoline structure. The related metal complex compound may, for example, be a metal complex having a luminescence from a triplet excited state, a complex of an alumium-quinolinol, or a benzoquinolinol, such as a ruthenium complex or a platinum complex.铍 complex, benzooxazolyl zinc complex, benzothiazole zinc complex, azomethyl zinc complex, zinc porphyrin zinc a complex, a phenanthroline europium complex, and the like.
高分子系材料係可列舉例如聚對伸苯基伸乙烯基衍生物、聚噻吩衍生物、聚對伸苯基衍生物、聚矽烷衍生物、聚乙炔衍生物、聚茀(polyfluorene)衍生物、聚乙烯基咔唑衍生物、前述色素系材料及金屬錯合物系發光材料之高分子化者等。The polymer material may, for example, be a polyparaphenylene vinyl derivative, a polythiophene derivative, a polyparaphenylene derivative, a polydecane derivative, a polyacetylene derivative, a polyfluorene derivative, or a poly A vinyl carbazole derivative, a macromolecularizer of the above-mentioned dye-based material, and a metal complex-based luminescent material.
發光層之厚度通常大約為2nm至200nm。The thickness of the luminescent layer is usually about 2 nm to 200 nm.
構成電子輸送層之電子輸送材料可使用公知者，可列舉例如噁二唑衍生物、蒽醌二甲烷(anthraquinone dimethane)或其衍生物、苯醌(benzoquinone)或其衍生物、萘醌(naphthoquinone)或其衍生物、蒽醌或其衍生物、四氰基蒽醌二甲烷或其衍生物、茀酮(fluorenone)衍生物、二苯基二氰基乙烯或其衍生物、聯苯醌(diphenoquinone)衍生物、或者是8-羥基喹啉或其衍生物之金屬錯合物、聚喹啉或其衍生物、聚喹噁啉(polyquinoxaline)或其衍生物、聚茀或其衍生物等。The electron transporting material constituting the electron transporting layer may be a known one, and examples thereof include an oxadiazole derivative, anthraquinone dimethane or a derivative thereof, benzoquinone or a derivative thereof, and naphthoquinone. Or a derivative thereof, hydrazine or a derivative thereof, tetracyanoquinodimethane or a derivative thereof, a fluorenone derivative, diphenyldicyanoethylene or a derivative thereof, diphenoquinone The derivative is either a metal complex of 8-hydroxyquinoline or a derivative thereof, polyquinoline or a derivative thereof, polyquinoxaline or a derivative thereof, polyfluorene or a derivative thereof, or the like.
電子輸送層之膜厚係考慮要求之特性及成膜步驟之簡易度等而適宜地設定，例如為1nm至1μm，較佳為2nm至500nm，更佳為5nm至200nm。The film thickness of the electron transport layer is appropriately set in consideration of the required characteristics, the ease of the film formation step, and the like, and is, for example, 1 nm to 1 μm, preferably 2 nm to 500 nm, and more preferably 5 nm to 200 nm.
構成電子注入層之電子注入材料係依照發光層之種類而適宜地選擇最適當之材料。電子注入材料可列舉例如鹼金屬；鹼土類金屬；包含鹼金屬和鹼土類金屬中之1種以上之合金；鹼金屬或鹼土類金屬之氧化物、鹵化物、碳酸鹽；以及該等物質之混合物等。前述鹼金屬及其氧化物、鹵化物和碳酸鹽可列舉例如鋰、鈉、鉀、銣、銫、氧化鋰、氟化鋰、氧化鈉、氟化鈉、氧化鉀、氟化鉀、氧化銣、氟化銣、氧化銫、氟化銫、碳酸鋰等。此外，前述鹼土類金屬及其氧化物、鹵化物、碳酸鹽可列舉例如鎂、鈣、鋇、鍶、氧化鎂、氟化鎂、氧化鈣、氟化鈣、氧化鋇、氟化鋇、氧化鍶、氟化鍶、碳酸鎂等。電子注入層可具有層積2層以上之層積構造，可列舉例如LiF/Ca等。The electron injecting material constituting the electron injecting layer is appropriately selected from the most suitable material in accordance with the kind of the light emitting layer. Examples of the electron injecting material include an alkali metal; an alkaline earth metal; an alloy containing at least one of an alkali metal and an alkaline earth metal; an oxide, a halide, or a carbonate of an alkali metal or an alkaline earth metal; and a mixture of the materials. Wait. Examples of the alkali metal and its oxides, halides and carbonates include lithium, sodium, potassium, rubidium, cesium, lithium oxide, lithium fluoride, sodium oxide, sodium fluoride, potassium oxide, potassium fluoride, and cerium oxide. Barium fluoride, barium oxide, barium fluoride, lithium carbonate, and the like. Further, examples of the alkaline earth metal and an oxide, a halide thereof and a carbonate thereof include magnesium, calcium, barium, strontium, magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, barium oxide, barium fluoride, and barium oxide. , barium fluoride, magnesium carbonate and the like. The electron injecting layer may have a laminated structure of two or more layers, and examples thereof include LiF/Ca and the like.
電子注入層之膜厚較佳為1nm至1μm程度。The film thickness of the electron injecting layer is preferably about 1 nm to 1 μm.
各有機層之形成方法可列舉例如噴嘴印刷法、噴墨印刷法、凸版印刷法、凹版印刷法等塗佈法或真空蒸鍍法等。Examples of the method for forming each organic layer include a coating method such as a nozzle printing method, an inkjet printing method, a relief printing method, and a gravure printing method, or a vacuum vapor deposition method.
此外，在塗佈法中，藉由將包含成為各有機層之有機EL材料之油墨塗佈成膜，並將其固化，而形成有機層。使用於塗佈法之油墨之溶媒可列舉例如三氯甲烷、二氯甲烷、二氯乙烷等氯系溶媒、四氫呋喃等醚系溶媒、甲苯、二甲苯等芳香族烴系溶媒、丙酮、甲基乙基甲酮等酮系溶媒、乙酸乙酯、乙酸丁酯、乙酸乙賽璐蘇(ethyl cellosolve acetate)等酯系溶媒和水等。Further, in the coating method, an ink containing an organic EL material serving as each organic layer is applied to a film and cured to form an organic layer. Examples of the solvent used in the ink of the coating method include a chlorine-based solvent such as chloroform, dichloromethane or dichloroethane, an ether solvent such as tetrahydrofuran, an aromatic hydrocarbon solvent such as toluene or xylene, acetone or methyl group. A ketone-based solvent such as ethyl ketone, an ester-based solvent such as ethyl acetate, butyl acetate or ethyl cellosolve acetate, or water.
首先準備形成由膜厚200nm之ITO薄膜所成第1電極之TFT基板(參考第3A圖)。在該TFT基板表面藉由旋轉塗佈器而塗佈感光性樹脂溶液(Toray股份公司製、Photoneece SL-1904)，並在加熱板上以110℃加熱120秒鐘，之後進行預烘烤。藉由該預烘烤而蒸發感光性樹脂溶液之溶媒，並形成感光性樹脂薄膜(參考第3B圖)。First, a TFT substrate formed of a first electrode made of an ITO thin film having a thickness of 200 nm was prepared (refer to FIG. 3A). A photosensitive resin solution (Photoneece SL-1904, manufactured by Toray Co., Ltd.) was applied onto the surface of the TFT substrate by a spin coater, and heated on a hot plate at 110 ° C for 120 seconds, followed by prebaking. The solvent of the photosensitive resin solution is evaporated by the prebaking, and a photosensitive resin film is formed (refer to FIG. 3B).
接著，使用接近式(proximity)曝光機，透過預定之遮罩而曝光感光性樹脂薄膜(參考第3C圖)。其曝光量係100mJ/cm2。接著，以顯影液(TOKUYAMA股份公司製、SD-1(TMAH 2.38wt%)溶液)而顯影90秒鐘，形成順錐形狀之分隔壁(參考第4A圖)。在230℃加熱該分隔壁20分鐘並硬化樹脂。藉由該後烘烤而形成膜厚1.0μm之分隔壁。Next, the photosensitive resin film is exposed through a predetermined mask using a proximity exposure machine (refer to FIG. 3C). The exposure amount was 100 mJ/cm 2 . Subsequently, development was carried out for 90 seconds with a developer (manufactured by TOKUYAMA Co., Ltd., SD-1 (TMAH 2.38 wt%)) to form a partition wall having a tapered shape (refer to Fig. 4A). The partition wall was heated at 230 ° C for 20 minutes and the resin was hardened. A partition wall having a film thickness of 1.0 μm was formed by this post-baking.
將鹽酸和氯化鐵之混合溶液保持在40℃，並在該混合溶液浸漬形成分隔壁之基板，之後蝕刻膜厚為200nm之第1電極(ITO)之表面90nm，藉此而在位於分隔壁之前端部之下側之第1電極(ITO)形成底切(參考第4B圖)。The mixed solution of hydrochloric acid and ferric chloride was kept at 40 ° C, and the substrate on which the partition wall was formed was immersed in the mixed solution, and then the surface of the first electrode (ITO) having a film thickness of 200 nm was etched by 90 nm, thereby being located at the partition wall. The first electrode (ITO) on the lower side of the front end portion forms an undercut (refer to FIG. 4B).
接著，在真空室導入基板，進行CF4電漿表面處理，在分隔壁之表面賦予疏液性。Next, the substrate was introduced into a vacuum chamber, and CF 4 plasma surface treatment was performed to impart liquid repellency to the surface of the partition wall.
接著，使用噴墨裝置(ULVAC公司製、Litrex142P)，在分隔壁所包圍之像素內塗佈油墨。在油墨使用固形份濃度1.5%之聚(伸乙基二氧噻吩)(PEDOT)/聚苯乙烯磺酸(PSS)水分散液(拜耳公司製、AI4083)。油墨係彈開於被賦予疏液性且和該油墨之接觸角大之分隔壁之表面，並填充於分隔壁所包圍之像素內，同時以吸入至形成分隔壁之端部下之底切之部位(也就是分隔壁之端部和第1電極之間之間隙)之方式充填，並均勻地擴散至分隔壁所包圍之像素內之各角落(參考第4C圖)。在200℃燒成該基板，並形成膜厚50nm之均勻膜厚之電洞注入層(參考第5A圖)。Next, an ink was applied to the pixels surrounded by the partition wall using an inkjet device (manufactured by ULVAC Co., Ltd., Litrex 142P). A poly(extended ethylene dioxythiophene) (PEDOT) / polystyrene sulfonic acid (PSS) aqueous dispersion (manufactured by Bayer, AI4083) having a solid concentration of 1.5% was used for the ink. The ink is bounced off the surface of the partition wall which is provided with lyophobicity and has a large contact angle with the ink, and is filled in the pixel surrounded by the partition wall, and is sucked to the portion under the end portion forming the partition wall. (that is, the gap between the end of the partition wall and the first electrode) is filled and uniformly diffused to each corner in the pixel surrounded by the partition wall (refer to FIG. 4C). The substrate was fired at 200 ° C to form a hole injection layer having a uniform film thickness of 50 nm (refer to FIG. 5A ).
接著形成3種類之發光層。首先對於放射紅色光之高分子發光材料，以使濃度為0.8wt%之方式混合於有機溶媒並調製為紅油墨。同樣地，對於放射綠色光之高分子發光材料，以使濃度為0.8wt%之方式混合於有機溶媒並調製為綠油墨。此外，對於放射藍色光之高分子發光材料，以使濃度為0.8wt%之方式混合於有機溶媒並調製為藍油墨。分別使用噴墨裝置(ULVAC公司製、Litrex142P)將該等紅、綠、藍油墨塗佈於預定之像素內(參考第5B圖)。油墨係藉由和該油墨之接觸角大之分隔壁而彈開，因此防止油墨沿著該頂面而溢流至相鄰區域，並收納於像素內。另一方面，收納於像素內之油墨係以吸入至形成分隔壁之端部下之底切之部位之方式充填，並均勻地擴散至分隔壁所包圍之像素內之各角落。藉由在130℃燒成該基板而形成均勻膜厚之發光層(膜厚60nm)(參考第5C圖)。Then, three types of light-emitting layers are formed. First, a polymer light-emitting material that emits red light is mixed with an organic solvent so as to have a concentration of 0.8% by weight to prepare a red ink. Similarly, the polymer light-emitting material that emits green light was mixed with an organic solvent so as to have a concentration of 0.8% by weight to prepare a green ink. Further, the polymer light-emitting material that emits blue light is mixed with an organic solvent so as to have a concentration of 0.8% by weight to prepare a blue ink. These red, green, and blue inks were applied to predetermined pixels using an inkjet apparatus (manufactured by ULVAC Co., Ltd., Litrex 142P) (refer to FIG. 5B). The ink is bounced off by the partition wall having a large contact angle with the ink, thereby preventing the ink from overflowing to the adjacent region along the top surface and being housed in the pixel. On the other hand, the ink accommodated in the pixel is filled so as to be sucked into the undercut portion formed at the end portion of the partition wall, and is uniformly diffused to each corner of the pixel surrounded by the partition wall. A light-emitting layer (film thickness: 60 nm) having a uniform film thickness was formed by firing the substrate at 130 ° C (refer to FIG. 5C).
此外，在前述之發光層上藉由真空蒸鍍法而依序地形成膜厚20nm之Ca層、膜厚150nm之Al層，並形成第2電極(陰極)。接著將形成有機EL元件之基板和密封用玻璃基板貼合並密封而製作為顯示裝製。如此所製作之有機EL元件係在顯示區域內均勻地發光，同時在各像素內也均勻地發光。Further, a Ca layer having a thickness of 20 nm and an Al layer having a thickness of 150 nm were sequentially formed on the above-mentioned light-emitting layer by a vacuum deposition method to form a second electrode (cathode). Next, the substrate on which the organic EL element was formed and the glass substrate for sealing were bonded and sealed to prepare a display device. The organic EL element thus produced emits light uniformly in the display region while uniformly emitting light in each pixel.
1．．．顯示裝置1. . . Display device
2．．．基台2. . . Abutment
3．．．分隔壁3. . . Partition wall
3a．．．分隔壁之端部3a. . . End of the dividing wall
4．．．有機EL元件4. . . Organic EL element
5．．．凹部5. . . Concave
6．．．第1電極6. . . First electrode
6a．．．分隔壁端部所覆蓋部位以外之殘餘部位6a. . . Residual parts other than the part covered by the end of the partition wall
6b．．．殘餘部位之周邊部6b. . . Peripheral part of the residual
7．．．第1有機層(電洞注入層)7. . . First organic layer (hole injection layer)
8．．．分隔壁形成用膜8. . . Membrane for forming partition wall
9．．．第2有機層(發光層)9. . . Second organic layer (light emitting layer)
10．．．第2電極10. . . Second electrode
11．．．分隔壁之端部和第1電極之界面11. . . Interface between the end of the partition wall and the first electrode
12．．．基台12. . . Abutment
13．．．分隔壁13. . . Partition wall
15．．．凹部15. . . Concave
16．．．第1電極16. . . First electrode
17．．．油墨17. . . Ink
18．．．有機層18. . . Organic layer
19．．．間隔部19. . . Spacer
21．．．光罩twenty one. . . Mask
22．．．油墨twenty two. . . Ink
31．．．間隙31. . . gap
第1圖係擴大而示意地表示本發明一實施形態之顯示裝置1之一部份的圖。Fig. 1 is a view schematically showing a part of a display device 1 according to an embodiment of the present invention.
第2圖係擴大而示意地表示本發明一實施形態之顯示裝置1之一部份的俯視圖。Fig. 2 is a plan view showing a part of the display device 1 according to the embodiment of the present invention in an enlarged manner.
第3A圖係用以說明本發明一實施形態之顯示裝置之製造方法的圖。Fig. 3A is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.
第3B圖係用以說明本發明一實施形態之顯示裝置之製造方法的圖。Fig. 3B is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.
第3C圖係用以說明本發明一實施形態之顯示裝置之製造方法的圖。Fig. 3C is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.
第4A圖係用以說明本發明一實施形態之顯示裝置之製造方法的圖。Fig. 4A is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.
第4B圖係用以說明本發明一實施形態之顯示裝置之製造方法的圖。Fig. 4B is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.
第4C圖係用以說明本發明一實施形態之顯示裝置之製造方法的圖。Fig. 4C is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.
第5A圖係用以說明本發明一實施形態之顯示裝置之製造方法的圖。Fig. 5A is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.
第5B圖係用以說明本發明一實施形態之顯示裝置之製造方法的圖。Fig. 5B is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.
第5C圖係用以說明本發明一實施形態之顯示裝置之製造方法的圖。Fig. 5C is a view for explaining a method of manufacturing a display device according to an embodiment of the present invention.
第6圖係擴大而示意地表示本發明一實施形態之顯示裝置1之一部份的俯視圖。Fig. 6 is a plan view showing an enlarged view of a part of a display device 1 according to an embodiment of the present invention.
第7圖係擴大而示意地表示本發明一實施形態之顯示裝置1之一部份的圖。Fig. 7 is a view schematically showing an enlarged view of a part of a display device 1 according to an embodiment of the present invention.
第8A圖係用以說明顯示裝置之製造方法的圖。Fig. 8A is a view for explaining a method of manufacturing the display device.
第8B圖係用以說明顯示裝置之製造方法的圖。Fig. 8B is a view for explaining a method of manufacturing the display device.
第8C圖係用以說明顯示裝置之製造方法的圖。Fig. 8C is a view for explaining a method of manufacturing the display device.
第9圖係用以說明先前技術之顯示裝置之製造方法的圖。Fig. 9 is a view for explaining a method of manufacturing a display device of the prior art.
1．．．顯示裝置1. . . Display device
2．．．基台2. . . Abutment
3．．．分隔壁3. . . Partition wall
3a．．．分隔壁之端部3a. . . End of the dividing wall
4．．．有機EL元件4. . . Organic EL element
5．．．凹部5. . . Concave
6．．．第1電極6. . . First electrode
6a．．．分隔壁端部所覆蓋部位以外之殘餘部位6a. . . Residual parts other than the part covered by the end of the partition wall
6b．．．殘餘部位之周邊部6b. . . Peripheral part of the residual
7．．．第1有機層(電洞注入層)7. . . First organic layer (hole injection layer)
8．．．分隔壁形成用膜8. . . Membrane for forming partition wall
9．．．第2有機層(發光層)9. . . Second organic layer (light emitting layer)
10．．．第2電極10. . . Second electrode
Claims (4)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010253571A JP5573616B2 (en) | 2010-11-12 | 2010-11-12 | Display device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201225729A TW201225729A (en) | 2012-06-16 |
| TWI544836B true TWI544836B (en) | 2016-08-01 |
Family
ID=46050912
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100140842A TWI544836B (en) | 2010-11-12 | 2011-11-09 | Display device and method for making the same |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP5573616B2 (en) |
| KR (1) | KR101867637B1 (en) |
| CN (1) | CN103210699A (en) |
| TW (1) | TWI544836B (en) |
| WO (1) | WO2012063766A1 (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL2007372C2 (en) | 2011-09-08 | 2013-03-11 | Univ Delft Tech | A process for the manufacture of a semiconductor device. |
| KR101955621B1 (en) * | 2012-09-21 | 2019-05-31 | 삼성디스플레이 주식회사 | Organic light emitting display panel and fabricating method for the same |
| WO2014069396A1 (en) * | 2012-10-30 | 2014-05-08 | 昭和電工株式会社 | Organic light-emitting element and method for manufacturing organic light-emitting element |
| KR102110418B1 (en) * | 2013-07-12 | 2020-05-14 | 삼성디스플레이 주식회사 | Organic light emitting diode display and method of manufacturing the same |
| KR101483669B1 (en) | 2013-11-20 | 2015-01-16 | 주식회사 사운들리 | Method for receiving of sound signal with low power and mobile device using the same |
| JP6844620B2 (en) * | 2016-06-07 | 2021-03-17 | ソニー株式会社 | Display device |
| CN111357392A (en) * | 2017-11-28 | 2020-06-30 | 堺显示器制品株式会社 | Organic EL light emitting element and method for manufacturing same |
| US10879327B2 (en) | 2018-07-09 | 2020-12-29 | Joled Inc. | Organic EL display panel and method of manufacturing the same, organic EL display device and electronic apparatus |
| KR20200124372A (en) | 2019-04-23 | 2020-11-03 | 삼성디스플레이 주식회사 | Color control member and display device employing the same |
| CN111370456A (en) * | 2020-03-19 | 2020-07-03 | 深圳市华星光电半导体显示技术有限公司 | Display panel and manufacturing method |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003017273A (en) * | 2001-07-05 | 2003-01-17 | Sony Corp | Display device and its manufacturing method |
| JP4310984B2 (en) * | 2002-02-06 | 2009-08-12 | 株式会社日立製作所 | Organic light emitting display |
| JP2005322469A (en) * | 2004-05-07 | 2005-11-17 | Seiko Epson Corp | Electro-optical device, its manufacturing method, and electronic equipment |
| JP4645064B2 (en) * | 2004-05-19 | 2011-03-09 | セイコーエプソン株式会社 | Manufacturing method of electro-optical device |
| GB0517195D0 (en) * | 2005-08-23 | 2005-09-28 | Cambridge Display Tech Ltd | Molecular electronic device structures and fabrication methods |
| JP5055925B2 (en) * | 2006-09-29 | 2012-10-24 | セイコーエプソン株式会社 | Electro-optical device and manufacturing method thereof |
| US7812345B2 (en) * | 2008-02-28 | 2010-10-12 | Panasonic Corporation | Organic EL display panel |
| JP2010097697A (en) * | 2008-10-14 | 2010-04-30 | Seiko Epson Corp | Organic el device and method of manufacturing the same, and electronic equipment |
| EP2398083B1 (en) * | 2009-02-10 | 2018-06-13 | Joled Inc. | Light-emitting element, display device, and method for manufacturing light-emitting element |
-
2010
- 2010-11-12 JP JP2010253571A patent/JP5573616B2/en active Active
-
2011
- 2011-11-07 KR KR1020137011892A patent/KR101867637B1/en active IP Right Grant
- 2011-11-07 CN CN2011800540930A patent/CN103210699A/en active Pending
- 2011-11-07 WO PCT/JP2011/075566 patent/WO2012063766A1/en active Application Filing
- 2011-11-09 TW TW100140842A patent/TWI544836B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TW201225729A (en) | 2012-06-16 |
| JP2012104430A (en) | 2012-05-31 |
| JP5573616B2 (en) | 2014-08-20 |
| KR101867637B1 (en) | 2018-06-15 |
| KR20130129934A (en) | 2013-11-29 |
| CN103210699A (en) | 2013-07-17 |
| WO2012063766A1 (en) | 2012-05-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI544836B (en) | Display device and method for making the same | |
| JP5417732B2 (en) | Method for forming lyophilic liquid repellent pattern and method for producing organic electroluminescent element | |
| JP6789196B2 (en) | Manufacturing method of organic EL display panel and organic EL display panel | |
| WO2011122481A1 (en) | Method of producing substrate for light-emitting device | |
| KR101885937B1 (en) | Display device | |
| WO2012002268A1 (en) | Display device and production method for same | |
| WO2013168546A1 (en) | Process for producing display device | |
| WO2011122445A1 (en) | Light emitting device | |
| WO2011118654A1 (en) | Method for manufacturing light-emitting device | |
| JP2008016336A (en) | Manufacturing method of organic semiconductor device, organic semiconductor device, manufacturing method of organic electroluminescent device, and organic electroluminescent device | |
| JP2010147180A (en) | Method of manufacturing organic electroluminescence element | |
| TWI603469B (en) | Display device | |
| JP5732977B2 (en) | Organic EL device and manufacturing method thereof | |
| JP2010160945A (en) | Method for manufacturing organic electroluminescence device | |
| JP4893839B2 (en) | Method for manufacturing light emitting device | |
| JP2014072013A (en) | Organic el display device | |
| JP2016042418A (en) | Organic electroluminescence panel and manufacturing method for the same | |
| JP2013073820A (en) | Organic el element and method for manufacturing the same | |
| JP2011070990A (en) | Organic el element, and manufacturing method thereof | |
| TW201320428A (en) | Method for manufacturing display device | |
| JP2013098149A (en) | Substrate used in display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |