TWI540048B - 異方性導電膜、接合體及連接方法 - Google Patents
異方性導電膜、接合體及連接方法 Download PDFInfo
- Publication number
- TWI540048B TWI540048B TW100103367A TW100103367A TWI540048B TW I540048 B TWI540048 B TW I540048B TW 100103367 A TW100103367 A TW 100103367A TW 100103367 A TW100103367 A TW 100103367A TW I540048 B TWI540048 B TW I540048B
- Authority
- TW
- Taiwan
- Prior art keywords
- resin
- conductive film
- mass
- anisotropic conductive
- circuit member
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L71/00—Compositions of polyethers obtained by reactions forming an ether link in the main chain; Compositions of derivatives of such polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/10—Adhesives in the form of films or foils without carriers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2650/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
- C08G2650/28—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule characterised by the polymer type
- C08G2650/56—Polyhydroxyethers, e.g. phenoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/08—Metals
- C08K2003/0862—Nickel
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/001—Conductive additives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K9/00—Use of pretreated ingredients
- C08K9/02—Ingredients treated with inorganic substances
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/20—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself
- C09J2301/208—Additional features of adhesives in the form of films or foils characterized by the structural features of the adhesive itself the adhesive layer being constituted by at least two or more adjacent or superposed adhesive layers, e.g. multilayer adhesive
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2461/00—Presence of condensation polymers of aldehydes or ketones
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
- H01L2224/29082—Two-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29355—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29444—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29399—Coating material
- H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29438—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29455—Nickel [Ni] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29499—Shape or distribution of the fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
- H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
- H01L2224/83862—Heat curing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00013—Fully indexed content
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Engineering & Computer Science (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Adhesives Or Adhesive Processes (AREA)
- Non-Insulated Conductors (AREA)
- Chemically Coating (AREA)
- Adhesive Tapes (AREA)
Description
本發明係關於兼具高導通可靠度及高接著力,尤其是在COF(晶粒軟膜接合(Chip On Film))及PWB(印刷配線板(Printed Wiring Board))之連接為適當的異方性導電膜、使用該異方性導電膜的接合體、及連接方法。
在組裝驅動IC於液晶顯示器(LCD)時,一般的方法是,將預先使驅動IC組裝於撓性基板(FPC)上的COF(晶粒軟膜接合(Chip On Film))經由異方性導電膜(ACF;(Anisotropic Conductive Film))熱接著於LCD及印刷配線板(PWB)來進行。
在此情形,LCD與COF、或COF與PWB係藉由ACF連接,而獲得互相的電性連接,且提供接著的功能,以使鄰接電極間保持絕緣性,同時LCD與COF、或COF與PWB不被外力所剝離。
近年來,為了降低LCD模組之成本,藉由將一個COF製成多輸出化(=微間距化),而使得削減COF之零件數的活動更活躍。
但是,隨著此種微間距化之進展,ACF熱壓合時之樣板位置誤差精度日趨嚴格。LCD側之樣板與COF之樣板、及COF之樣板與PWB側樣板之位置誤差難易度,前者雖為細小的間距,不過因LCD側為玻璃,故熱膨脹量呈穩定,可藉由預先修正COF之樣板間距,而予以對應。
一方面,後者為PWB之玻璃時,因環氧材料之厚度在品質上並不穩定,故熱膨脹量亦不穩定,位置誤差難易度很高。又,廣泛使用的PWB之FR-4規格,其玻璃轉換溫度(Tg)為110℃至130℃,在考慮PWB之翹曲或ACF連接部之損害減低時,按壓時溫度較佳為更低溫。因此,在COF與PWB之連接,則追求低溫連接。而且,在近年由於生產性提高,故能短時間連接之要求亦趨強烈。
但是,由於對ACF提供低溫連接性及短時間連接性,且導通可靠度提高時,其提高黏合劑硬化物之機械強度,會有COF與PWB接合部之接著強度(90°Y軸方向剝離強度)變低的傾向。本發明認為其原因為:在低溫領域黏合劑馬上凝固,故COF側之聚醯亞胺材料與黏合劑無法充分濕潤,難以形成化學鍵結;及黏合劑硬化物堅固,在90°Y軸方向剝離強度之測定時,其連接部之黏合劑硬化物本身之變形量少,故用以使之變形之吸收能量減少。
一方面,在測定90°Y軸方向剝離強度時,由於連接部之黏合劑硬化物本身之變形量變多,故若設計黏合劑硬化物之機械強度(=彈性率)為低時,雖然接著強度提高,但會致使導通可靠度變差。
如此,在追求對COF之接著強度提高,與對TCP(Tape Carrier Package)之導通可靠度提高之均衡性,為極困難的課題之一。
又,根據COF之種類,被認為會有無法獲得充分的剝離強度的問題。因係高度接著於難以接著的(=剝離強度低)COF,故雖亦有使ACF之黏合劑組成最適化的方法,不過在使一個COF最適化時,則其他COF,會有變得難以接著的問題。
通常,在LCD面板組裝COF,而完成LCD模組後,再將該LCD模組組裝於外殼時,在LCD面板與COF、COF與PWB之ACF連接部係加諸暫時的外來應力。
在經驗上,眾所皆知的是LCD面板與COF及COF與PWB之剝離強度非4N/cm以上時,將LCD模組組裝於外殼作業,其COF與ACF連接部剝離之可能性變高。在此情形,LCD面板與COF、及COF與PWB之剝離強度越高,則越可承受組裝時之外來應力,可提高組裝作業者方便使用。
各式各樣對COF提供高接著性的方法,係藉由降低ACF之黏合劑的玻璃轉換溫度(Tg)及彈性率,則可對各黏附體之接著界限加寬,由於在高溫高濕環境(於85℃、85%RH)下,黏合劑易於鬆弛,故會有導致導通電阻提高之課題。
為了解決該課題,先前嘗試許多研討。例如在專利文獻1及專利文獻2,係建議使用鎳微粒子的ACF。
又,在專利文獻3、專利文獻4、及專利文獻5,建議一種導電性粒子及使用其的ACF,其係對樹脂芯進行鍍鎳,並在其外殻實施鍍金。
又,在專利文獻6,建議一種ACF,其係對樹脂芯進行鍍鎳,在其外殻實施鍍銀。
又,在專利文獻7,建議一種ACF,其含有硬質導電性粒子與軟質導電性粒子。該硬質導電性粒子方面,係使用在鎳實施鍍金之物,在該軟質導電性粒子方面,係使用在交聯聚苯乙烯樹脂粒子實施鍍金之物。
但是,在任一先前技術文獻中,尚無法於低溫短時間(於130℃、3秒)條件中獲得,兼具高接著力與優異導通可靠度的異方性導電膜、使用該異方性導電膜的接合體、及連接方法,目前是期望其前述課題能快速達成,以提供使用。
【先前技術文獻】
【專利文獻】
【專利文獻1】 日本特開2007-211122號公報
【專利文獻2】 日本特開2004-238738號公報
【專利文獻3】 日本特表2009-500804號公報
【專利文獻4】 日本特開2008-159586號公報
【專利文獻5】 日本特開2004-14409號公報
【專利文獻6】 日本特開2007-242731號公報
【專利文獻7】 日本特開平11-339558號公報
本發明之課題係為解決先前技術的前述各問題,並達成以下之目的。亦即,本發明之目的係提供一種在低溫短時間條件中,兼具高接著力與優異導通可靠度的異方性導電膜、使用該異方性導電膜的接合體、及連接方法。
為了解決該課題,本發明人經研討結果獲得下述的真知灼見:其係至少由絕緣層與導電層之二層構成所構成;為了使該絕緣層獲得高的接著力,而含有單官能基單體;為了使該導電層突破PWB電極上之氧化膜,而獲得低的連接電阻而含有鎳粒子;以及為了獲得高導通可靠度,而含有至少以鎳被覆樹脂芯的樹脂粒子,與含有此二種導電性粒子的異方性導電膜,雖然在低溫短時間條件下,但具有高度接著力,且具備優異導通可靠度。
本發明係根據本發明人所得該真知灼見之物,該解決課題之手段係如下述。亦即,
<1>一種異方性導電膜,其為至少具有導電層與絕緣層,該絕緣層含有黏合劑、單官能基之聚合性單體、及硬化劑,該導電層含有鎳粒子、金屬被覆樹脂粒子、黏合劑、聚合性單體、及硬化劑,該金屬被覆樹脂粒子係至少以鎳被覆樹脂芯的樹脂粒子。
<2>如該<1>項之異方性導電膜,其中絕緣層至少含有苯氧基樹脂、單官能基之(甲基)丙烯酸單體、及有機過氧化物。
<3>如該<1>或<2>項之異方性導電膜,其中導電層至少含有苯氧基樹脂、(甲基)丙烯酸單體、及有機過氧化物。
<4>如該<1>至<3>項中任一項之異方性導電膜,其中金屬被覆樹脂粒子係以鎳被覆樹脂芯之樹脂粒子,及以鎳被覆樹脂芯、進一步以金被覆最表面的樹脂粒子中的任一種。
<5>如該<1>至<4>項中任一項之異方性導電膜,其中樹脂芯之材料係苯乙烯-二乙烯苯共聚物及苯胍胺樹脂中任一種。
<6>如該<1>至<5>項中任一項之異方性導電膜,其中金屬被覆樹脂粒子之平均粒徑為5μm以上。
<7>如該<1>至<6>項中任一項之異方性導電膜,其中相對於導電層之樹脂固體成分100質量份,鎳粒子及金屬被覆樹脂粒子之導電層中合計含量為3.0質量份至20質量份。
<8>一種接合體,其特徵為具備:第一電路構件、第二電路構件、及如<1>至<7>項中任一項之異方性導電膜,經由該異方性導電膜,該第一電路構件與該第二電路構件為接合。
<9>如該<8>項之接合體,其中第一電路構件為印刷配線板,第二電路構件為COF。
<10>一種連接方法,其為在第一電路構件與第二電路構件之連接方法中,如<1>至<7>項中任一項之異方性導電膜,係被夾持於該第一電路構件與第二電路構件之間,藉由自該第一電路構件及第二電路構件加熱,同時壓製,而使該異方性導電膜硬化,並連接該第一電路構件與該第二電路構件。
<11>如該<10>項之連接方法,其中第一電路構件為印刷配線板,第二電路構件為COF。
<12>如該<11>項之連接方法,其係配置異方性導電膜之導電層在印刷配線板側,使該異方性導電膜之絕緣層設在COF側。
根據本發明,係提供一種異方性導電膜、使用該異方性導電膜的接合體、及連接方法,其可解決先前技術中前述之各種問題,並達成前述之目的,該異方性導電膜兼具低溫短時間條件的高接著力及優異的導通可靠度。
(異方性導電膜)
本發明之異方性導電膜,係至少具有導電層及絕緣層,以及剝離基材,進一步可依照需要具有其他層。
該異方性導電膜較佳是具有:一剝離基材(隔片);一絕緣層,其係形成於該剝離基材(隔片)上;及一導電層,其係形成於該絕緣層上的態樣。此外,該異方性導電膜,可為不具有剝離基材的態樣,而在具有剝離基材之情形,於連接時,係使剝離基材被剝離除去。
<絕緣層>
該絕緣層係含有黏合劑、單官能基之聚合性單體、及硬化劑,以及矽烷偶合劑,進一步可依照需要含有其他之成分。
在先前尚未有異方性導電膜(ACF)之作為黏合劑之反應主成分的單官能基單體被使用過。此係單官能基單體係提供對薄膜之黏性,或以溶解黏合劑為目的做使用,在反應成分僅是單官能基單體,因黏合劑硬化物呈現黏著狀,或成為耐熱性降低的黏合劑硬化物,故並無法適用於高導通可靠度所要求的異方性導電膜。
一方面,異方性導電膜之黏合劑顯示高玻璃轉換溫度(Tg)者,在COF驅動器驅動時亦有從40℃發熱至60℃左右之情形故較佳,又,藉由使用單官能基單體,亦使黏合劑之調配比率變多,即可提高機械強度,故由具有含二種導電性粒子的導電層及絕緣層的二層構成之本發明異方性導電膜中,即使使用單官能基單體於絕緣層,並不會對導通特性產生問題。
又,本發明之異方性導電膜,係由導電層所含的硬鎳粒子侵入端子所構成,為了維持對該端子之侵入,故需要充分的接著強度(剝離強度)。而且,只要在室溫之剝離強度在高狀態下,則可承受組裝時之外部應力,亦可維持鎳粒子對端子之侵入。
因此,在本發明之異方性導電膜中,在導電層中含有2種導電性粒子(鎳粒子與至少以鎳被覆樹脂芯的樹脂粒子),設定成在絕緣層含有單官能基單體的黏合劑組成則為不可或缺。
-黏合劑-
該黏合劑方面,並無特別限制,可依目的適宜選擇,可例舉如:苯氧基樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、胺基甲酸酯樹脂、丁二烯樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚烯烴樹脂等。該等黏合劑可單獨使用任一種,亦可併用兩種以上。該等黏合劑中,由製膜性、加工性、連接可靠度之觀點觀之,最佳為苯氧基樹脂。
該苯氧基樹脂係指,在由雙酚A及環氧氯丙烷所合成的樹脂中,亦可使用適宜合成之物,亦可使用市售品。該市售品方面,可例舉如:商品名:YP-50(東都化成股份有限公司製)、YP-70(東都化成股份有限公司製)、EP1256(日本環氧樹脂股份有限公司製)等。
該黏合劑之該絕緣層中含量,並無特別限制,可依目的適宜選擇,例如較佳是20質量%至70質量%、更佳為35質量%至55質量%。
-單官能基之聚合性單體-
該單官能基之聚合性單體方面,只要是分子內具有一聚合性基之物,則並無特別限制,可依目的適宜選擇,可例舉如:單官能基之(甲基)丙烯酸單體、苯乙烯單體、丁二烯單體、其他具有雙鍵的烯烴系單體等。該等單官能基之聚合性單體可單獨使用任一種,亦可併用兩種以上。該等單官能基之聚合性單體中,以接著強度、連接可靠度之觀點觀之,最佳為單官能基(甲基)丙烯酸單體。
該單官能基(甲基)丙烯酸單體方面,並無特別限制,可依目的適宜選擇,可例舉如:丙烯酸、丙烯酸甲酯、丙烯酸乙酯、丙烯酸丙酯、丙烯酸正丁酯、丙烯酸異丁酯、丙烯酸正辛酯、丙烯酸正十二酯、丙烯酸2-乙基己酯、丙烯酸硬脂醯酯、丙烯酸2-氯乙酯、丙烯酸苯酯等之丙烯酸、或其酯類;甲基丙烯酸、甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸丙酯、甲基丙烯酸正丁酯、甲基丙烯酸異丁酯、甲基丙烯酸正辛酯、甲基丙烯酸正十二酯、甲基丙烯酸2-乙基己酯、甲基丙烯酸硬脂醯酯、甲基丙烯酸苯酯、甲基丙烯酸二甲基胺基乙酯、甲基丙烯酸二乙基胺基乙酯等之甲基丙烯酸或其酯類等。該等單官能基(甲基)丙烯酸單體可單獨使用任一種,亦可併用兩種以上。
該單官能基之聚合性單體之該絕緣層中含量並無特別限制,可依目的適宜選擇,較佳為2質量%至30質量%、更佳為5質量%至20質量%。
-硬化劑-
該硬化劑方面,只要是可硬化黏合劑之物,則並無特別限制,可依目的適宜選擇,例如較佳為有機過氧化物等。
作為該有機過氧化物,可例舉如:過氧化月桂醯、過氧化丁基、過氧化苄基、過氧化二月桂醯、過氧化二丁基、過氧化苄基、過氧二碳酸酯、過氧化苯甲醯等。該等有機過氧化物可單獨使用任一種,亦可併用兩種以上。
該硬化劑之該絕緣層中含量,並無特別限制,可依目的適宜選擇,較佳是1質量%至15質量%、更佳為3質量%至10質量%。
-矽烷偶合劑-
該矽烷偶合劑方面,並無特別限制,可依目的適宜選擇,可例舉如:環氧系矽烷偶合劑、丙烯酸系矽烷偶合劑、硫醇系矽烷偶合劑、胺系矽烷偶合劑等。
該矽烷偶合劑之該絕緣層中含量,並無特別限制,可依目的適宜選擇,較佳為0.5質量%至10質量%、更佳為1質量%至5質量%。
-其他成分-
該其他成分方面,並無特別限制,可依目的適宜選擇,可例舉如:填充劑、軟化劑、促進劑、抗老化劑、著色劑(顏料、染料)、有機溶劑、離子捕集劑等。該其他成分之添加量,並無特別限制,可依目的適宜選擇。
該絕緣層,可調製例如黏合劑、單官能基之聚合性單體、硬化劑,較佳為矽烷偶合劑,進一步可依照需要來調製含有其他成分(有機溶劑等)之絕緣層用塗布液,藉由將該絕緣層用塗布液塗布於剝離基材(隔片)上,予以乾燥,並除去有機溶劑來形成。
該絕緣層之厚度,並無特別限制,可依目的適宜選擇,較佳為例如10μm至25μm、更佳為18μm至21μm。該厚度過薄時,則會致使剝離強度降低,過厚時,則會有導通可靠度惡化之虞。
<導電層>
該導電層含有鎳粒子、金屬被覆樹脂粒子、黏合劑、聚合性單體、硬化劑,及矽烷偶合劑,進一步可依照需要含有其他成分。
-鎳粒子-
該鎳粒子,係為實現低連接電阻所使用。該鎳粒子方面,並無特別限制,可依目的適宜選擇,不過較佳為平均粒徑1μm至5μm。該平均粒徑小於1μm時,因表面積少,故在按壓後,會對連接可靠度產生不良影響,超過5μm時,在配線有微間距之情形,則發生配線間之短路,會造成不良影響。
此外,亦可使用在該鎳粒子表面具有金屬突起之物,或將鎳粒子表面以有機物形成絕緣皮膜之物。
該鎳粒子之平均粒徑係表示數量平均粒徑,例如可以粒度分布測定裝置(Microtrack MT3100,日機裝股份有限公司製)等來測定。
該鎳粒子之硬度較佳為例如2,000kgf/mm2至6,000kgf/mm2。該鎳粒子之硬度,例如可藉由微小壓縮機試驗,而加諸負荷於鎳粒子,由進行10%位移時之試驗力來求得。
該鎳粒子方面,亦可使用適宜合成之物,亦可使用市售品。
該鎳粒子之該導電層中含量,並無特別限制,可依目的適宜選擇,相對於樹脂固體成分(黏合劑與聚合性單體與硬化劑之合計量)100質量份,較佳為2質量份至10質量份、更佳為2質量份至8質量份。該含量過少時,會有導通電阻變高之情況,過多時,則有短路之危險度增加之虞。
-金屬被覆樹脂粒子-
該金屬被覆樹脂粒子方面,由確保導通可靠度之點觀之,較佳為以至少鎳被覆樹脂芯的樹脂粒子,可例舉如:以鎳被覆樹脂芯的樹脂粒子,以鎳被覆樹脂芯,且進一步以金被覆最表面的樹脂粒子等。
對該樹脂芯之鎳或金之被覆方法方面,並無特別限制,可依目的適宜選擇,可例舉如:無電鍍法、濺鍍法等。
該樹脂芯之材料方面,並無特別限制,可依目的適宜選擇,可例舉如:苯乙烯-二乙烯苯共聚物、苯胍胺樹脂、交聯聚苯乙烯樹脂、丙烯酸樹脂、苯乙烯-二氧化矽複合樹脂等。該等樹脂芯之材料中,由柔軟的粒子在壓縮時接觸面積變大,且可確保良好的導通可靠度之觀點觀之,最佳為苯乙烯-二乙烯苯共聚物。
該金屬被覆樹脂粒子之硬度,較佳為例如50kgf/mm2至500kgf/mm2。該金屬被覆樹脂粒子之硬度,例如可以微小壓縮機試驗,而加諸負荷於金屬被覆樹脂粒子,並自10%位移時之試驗力來求得。
該鎳粒子之硬度(A)與該金屬被覆樹脂粒子之硬度(B)之硬度差(A-B)較佳為1,500kgf/mm2以上、更佳為2,000kgf/mm2至5,000kgf/mm2。該硬度差(A-B)小於1,500kgf/mm2時,則鎳粒子本身之硬度不足,鎳粒子無法突破電極樣板上之金屬氧化膜,而會造成導通不良。
該金屬被覆樹脂粒子方面,可使用適宜合成之物,亦可使用市售品。
該金屬被覆樹脂粒子之平均粒徑較佳為5μm以上、更佳為9μm至11μm。該平均粒徑小於5μm時,則會降低按壓時金屬被覆樹脂粒子之排斥力,會有對連接可靠度產生不良影響之情況。
該金屬被覆樹脂粒子之平均粒徑係表示數量平均粒徑,例如可以粒度分布測定裝置(Microtrack MT3100,日機裝股份有限公司製)等來測定。
該金屬被覆樹脂粒子之該導電層中含量,並無特別限制,可依目的適宜選擇,相對於樹脂固體成分(黏合劑與聚合性單體與硬化劑之合計量)100質量份,較佳為2質量份至10質量份、更佳為2質量份至8質量份。該含量過少時,會使導通電阻變高,過多時,則有增加短路之危險度之虞。
相對於該導電層之樹脂固體成分100質量份,該鎳粒子及該金屬被覆樹脂粒子之導電層中合計含量較佳為3質量份至20質量份、更佳為5質量份至10質量份。該含量過少時,則導通電阻會有變高之情形,過多時,則會有短路之危險度增加之虞。
-聚合性單體-
該聚合性單體方面,並無特別限制,可使用單官能基至多官能基之聚合性單體,可例舉如:單官能基之(甲基)丙烯酸單體、雙官能基之(甲基)丙烯酸單體、三官能基之(甲基)丙烯酸單體等。該等聚合性單體可單獨使用任一種,亦可併用兩種以上。
該聚合性單體之該導電層中含量,並無特別限制,可依目的適宜選擇,較佳為3質量%至60質量%、更佳為5質量%至50質量%。
-黏合劑、硬化劑、矽烷偶合劑、及其他之成分-
該導電層中黏合劑、硬化劑、矽烷偶合劑、及其他之成分方面,與該絕緣層之黏合劑、硬化劑、矽烷偶合劑、及其他之成分為相同之物,可以與該絕緣層同樣的含量使用。
該導電層可調製例如鎳粒子、金屬被覆樹脂粒子、黏合劑、聚合性單體、硬化劑、較佳為矽烷偶合劑、進一步可依照需要調製含有其他成分的導電層用塗布液,將該導電層用塗布液塗布於絕緣層上來形成。
該導電層之厚度,並無特別限制,可依目的適宜選擇,較佳為例如10μm至25μm、更佳為15μm至20μm。該厚度過薄時,會使導通可靠度惡化,過厚時,會有剝離強度降低之情形。
將該絕緣層與該導電層合在一起的異方性導電膜之厚度,較佳為25μm至55μm、更佳為30μm至50μm。該厚度過薄時,會因填充不足而致剝離強度降低之情形,過厚時,則會產生壓入不足而致導通不良之情形。
-剝離基材-
該剝離基材方面,就其形狀、構造、大小、厚度、材料(材質)等,並無特別限制,可依目的適宜選擇,不過較佳為剝離性良好之物或耐熱性高之物,可例舉如:塗布有聚矽氧等之剝離劑的透明的剝離PET(聚對酞酸乙二酯)薄片、PTFE(聚四氟乙烯)薄片等。
該剝離基材之厚度,並無特別限制,可依目的適宜選擇,較佳為例如10μm至100μm、更佳為20μm至80μm。
在此,本發明之異方性導電膜係如第1圖所示,具有剝離基材(隔片)20、形成於該剝離基材(隔片)20上之絕緣層22、形成於該絕緣層22上之導電層21。在導電層21中分散有導電性粒子12a(鎳粒子及鍍鎳/金樹脂粒子)。
如第2圖所示,使該導電膜12的導電層21側黏貼在PWB 10上。其後,使剝離基材(隔片)20剝離,使COF 11自絕緣層22側按壓,並形成接合體100。
(接合體)
本發明之接合體具備:第一電路構件、第二電路構件、及本發明之該異方性導電膜,進一步可依照需要具備其他構件。
經由該異方性導電膜,使該第一電路構件與該第二電路構件接合。
-第一電路構件-
該第一電路構件方面,並無特別限制,可依目的適宜選擇,可例舉如:FPC、PWB等。其中最佳為PWB。
-第二電路構件-
該第二電路構件方面,並無特別限制,可依目的適宜選擇,可例舉如:FPC、COF(晶粒軟膜接合(chip on film))、TCP、PWB、IC基板、面板等。其中最佳為COF。
在此,在該接合體中,該異方性導電膜之導電層係黏貼於第一電路構件之印刷配線板側,並將該異方性導電膜剝離於剝離基材,配置絕緣層於第二電路構件之COF側。
(連接方法)
本發明之連接方法係在第一電路構件與第二電路構件之連接方法中,本發明之異方性導電膜,係被夾持於該第一電路構件與第二電路構件之間,藉由自該第一電路構件及第二電路構件加熱,同時壓製,而使該異方性導電膜硬化,並連接該第一電路構件與該第二電路構件之物。
在此情形,該第一電路構件係印刷配線板,該第二電路構件較佳為COF。
較佳的配置係該異方性導電膜之導電層在印刷配線板側,而該異方性導電膜之絕緣層在COF側,藉由自COF上面一邊加熱,一邊壓製而予接合。
-按壓條件-
上述加熱係由總熱量來決定,在連接時間10秒以下完成了接合之情形,加熱溫度較佳在120℃至220℃進行。
該按壓因第二電路構件之種類而異,並無法一概地規定,不過例如在TAB膠帶之情形,在壓力2MPa至6MPa;IC晶片之情形,於壓力20MPa至120MPa;COF之情形,較佳是在壓力2MPa至6MPa,各自進行3至10秒。
【實施例】
茲就本發明之實施例說明如下,但本發明並非受到下述實施例所受任何限定。
<鎳粒子或樹脂粒子之平均粒徑之測定>
該鎳粒子或樹脂粒子之平均粒徑可以粒度分布測定裝置(Microtrack MT3100,日機裝股份有限公司製)測定。
(製造例1)
-鎳粒子之製作-
將淡水河谷公司製鎳粉末型式T255分級成為平均粒徑3μm,製成鎳粒子。
(製造例2)
-鍍金的鎳粒子之製作-
將淡水河谷公司製鎳粉末型式T255分級成為平均粒徑3μm後,以置換電鍍,鍍金於鎳粒子表面,成為鍍金的鎳粒子。
(製造例3)
-鍍鎳樹脂粒子之製作-
在平均粒徑10μm之苯乙烯-二乙烯苯共聚物之樹脂粒子,實施無電鍍鎳於粒子表面,來製作鍍鎳樹脂粒子。
(製造例4)
-鍍鎳/金樹脂粒子A之製作-
在平均粒徑10μm之苯乙烯-二乙烯苯共聚物之樹脂粒子,實施無電鍍鎳於粒子表面,進一步以置換電鍍,在鍍鎳表面實施鍍金,來製作鍍鎳/金樹脂粒子A。
(製造例5)
-鍍鎳/金樹脂粒子B之製作-
在平均粒徑10μm之交聯聚苯乙烯粒子,實施無電鍍鎳於粒子表面,進一步以置換電鍍,鍍金於鍍鎳表面,並製作鍍鎳/金樹脂粒子B。
(製造例6)
-鍍鎳/金樹脂粒子C之製作-
在平均粒徑5μm之苯胍胺粒子,實施無電鍍鎳於粒子表面,進一步以置換電鍍,在鍍鎳表面進行鍍金,並製作鍍鎳/金樹脂粒子C。
(實施例1)
<異方性導電膜1之製作>
-絕緣層1之製作-
調製含有:苯氧基樹脂(商品名:YP-50,東都化成股份有限公司製)45質量份、胺基甲酸酯丙烯酸酯(商品名:U-2PPA,新中村化學股份有限公司製)20質量份、單官能基丙烯酸單體(商品名:4-HBA,大阪有機化學工業股份有限公司製)10質量份、磷酸酯型丙烯酸酯(商品名:PM-2,日本化藥股份有限公司製)2質量份、作為有機過氧化物之過氧化苯甲醯(日油股份有限公司製)3質量份、及作為有機過氧化物之過氧化二月桂醯(日油股份有限公司製)3質量份的乙酸乙酯與甲苯之混合溶液,以使固體成分成為50質量%。
接著,將該混合溶液塗布於厚度50μm之聚對酞酸乙二酯(PET)薄膜上後,藉由以80℃之烤爐乾燥5分鐘,並剝離PET薄膜,來製作厚度18μm之絕緣層1。
-導電層1之製作-
調製含有:苯氧基樹脂(商品名:YP-50,東都化成股份有限公司製)45質量份、胺基甲酸酯丙烯酸酯(商品名:U-2PPA,新中村化學股份有限公司製)20質量份、雙官能基丙烯酸單體(商品名:A-200,新中村化學股份有限公司製)20質量份、單官能基丙烯酸單體(商品名:4-HBA,大阪有機化學工業股份有限公司製)10質量份、磷酸酯型丙烯酸酯(商品名:PM-2,日本化藥股份有限公司製)2質量份、作為有機過氧化物之過氧化苯甲醯(日油股份有限公司製)3質量份、作為有機過氧化物之過氧化二月桂醯(日油股份有限公司製)3質量份、製造例1之鎳粒子(平均粒徑3μm)2.8質量份、及製造例6之鍍鎳/金樹脂粒子C(平均粒徑5μm,樹脂芯:苯胍胺樹脂)3.8質量份之乙酸乙酯與甲苯之混合溶液,以使固體成分為50質量%。
接著,將該混合溶液塗布於厚度50μm之聚對酞酸乙二酯(PET)薄膜上,之後,藉由在80℃之烤爐乾燥5分鐘,剝離PET薄膜,而製作厚度17μm之導電層1。
接著,藉由將所製作的絕緣層1與導電層1以滾輪碾壓,並予貼合,製作合計厚度為35μm,由絕緣層1及導電層1所組成的二層構成之異方性導電膜1。
-接合體之製作-
經由製作的異方性導電膜1進行COF(聚醯亞胺薄膜厚度38μm、銅厚度8μm、200μmP(間距)(線:間隔=1:1)、鍍錫品)或TCP(聚醯亞胺薄膜厚度75μm、銅厚度18μm、環氧系接著劑層12μm、200μmP(間距)(線:間隔=1:1)、鍍錫品)與PWB(玻璃環氧基板,銅厚度35μm、200μmP(間距)(線:間隔=1:1)、金閃鍍(flash plating)品)之接合,來製作接合體1。
此外,COF或TCP與PWB之連接係以下列按壓條件進行。
<按壓條件>
‧ACF寬:2.0mm
‧工具(tool)寬:2.0mm
‧緩衝材料:聚矽氧橡膠厚度0.2mm
‧0.2mmP(間距)-COF/PWB:130℃/3MPa/3秒
‧0.2mmP(間距)-TCP/PWB:140℃/3MPa/3秒
接著,就所製作的異方性導電膜1及接合體1,依照以下方式,測定剝離強度、及導通電阻。結果如表1所示。
<剝離強度之測定方法>
將製作的接合體如第3圖所示,以拉伸速度50mm/min測定90°Y軸方向剝離強度。因對COF較TCP更難以接著,故剝離強度係僅測定對COF,並以下述基準評價。此外,結果係以剝離強度之最大值(N/cm)表示。
[評價基準]
○:剝離強度8N/cm以上
×:剝離強度小於8N/cm
<導通電阻之測定方法>
將製作的接合體如:第4圖所示,使用測試器,外加1mA之恆定電流時之電壓,以四端子法測定導通電阻[初期導通電阻(Ω)、及環境試驗(於85℃、85%RH中放置1,000小時)後之導通電阻(Ω)],以下述基準評價。對TCP之導通可靠度因較COF更嚴格,故導通電阻係僅測定對TCP。
[初期導通電阻之評價基準]
○:導通電阻為0.060Ω以下
×:導通電阻超過0.060Ω
[環境試驗(於85℃在85%RH放置1,000小時)後之導通電阻之評價基準]
○:(初期之導通電阻/環境試驗後之導通電阻)小於5倍
△:(環境試驗後之導通電阻/初期之導通電阻)為5倍以上小於11倍
×:(環境試驗後之導通電阻/初期之導通電阻)為11倍以上
(實施例2)
<異方性導電膜2之製作及評價>
除了在實施例1中,將導電層1替代以下述導電層2以外,其他則與實施例1同樣地,製作合計厚度為35μm的由絕緣層1及導電層2所組成二層構成之異方性導電膜2及接合體2。
就製作的異方性導電膜2及接合體2,係與實施例1同樣地,測定剝離強度、及導通電阻。結果如表1所示。
-導電層2之製作-
調製含有:苯氧基樹脂(商品名:YP-50,東都化成股份有限公司製)45質量份、胺基甲酸酯丙烯酸酯(商品名:U-2PPA,新中村化學股份有限公司製)20質量份、雙官能基丙烯酸單體(商品名:A-200,新中村化學股份有限公司製)20質量份、單官能基丙烯酸單體(商品名:4-HBA,大阪有機化學工業股份有限公司製)10質量份、磷酸酯型丙烯酸酯(商品名:PM-2,日本化藥股份有限公司製)2質量份、作為有機過氧化物之過氧化苯甲醯(日油股份有限公司製)3質量份、作為有機過氧化物之過氧化二月桂醯(日油股份有限公司製)3質量份、製造例1之鎳粒子(平均粒徑3μm)2.8質量份、及製造例5之鍍鎳/金樹脂粒子B(平均粒徑10μm,樹脂芯:交聯聚苯乙烯)3.8質量份的乙酸乙酯與甲苯之混合溶液,以使固體成分成為50質量%。
接著,將該混合溶液塗布於厚度50μm之聚對酞酸乙二酯(PET)薄膜上後,藉由以80℃之烤爐乾燥5分鐘,剝離PET薄膜,來製作厚度17μm之導電層2。
(實施例3)
<異方性導電膜3之製作>
除了在實施例1中,將導電層1替代以下述導電層3以外,其他則與實施例1同樣地,製作合計厚度為35μm之由絕緣層1與導電層3所組成二層構成之異方性導電膜3及接合體3。
就所製作的異方性導電膜3及接合體3,則與實施例1同樣地,測定剝離強度、及導通電阻。結果如表1所示。
-導電層3之製作-
調製含有:苯氧基樹脂(商品名:YP-50,東都化成股份有限公司製)45質量份、胺基甲酸酯丙烯酸酯(商品名:U-2PPA,新中村化學股份有限公司製)20質量份、雙官能基丙烯酸單體(商品名:A-200,新中村化學股份有限公司製)20質量份、單官能基丙烯酸單體(商品名:4-HBA,大阪有機化學工業股份有限公司製)10質量份、磷酸酯型丙烯酸酯(商品名:PM-2,日本化藥股份有限公司製)2質量份、作為有機過氧化物之過氧化苯甲醯(日油股份有限公司製)3質量份、作為有機過氧化物之過氧化二月桂醯(日油股份有限公司製)3質量份、製造例1之鎳粒子(平均粒徑3μm)2.8質量份、及製造例4之鍍鎳/金樹脂粒子A(平均粒徑10μm,樹脂芯:苯乙烯-二乙烯苯共聚物)3.8質量份的乙酸乙酯與甲苯之混合溶液,以使固體成分成為50質量%。
接著,將該混合溶液塗布於厚度50μm之聚對酞酸乙二酯(PET)薄膜上後,藉由以80℃之烤爐乾燥5分鐘,剝離PET薄膜,來製作厚度17μm之導電層3。
(實施例4)
<異方性導電膜4之製作>
除了在實施例1中,將導電層1替代以下述導電層4以外,其他則與實施例1同樣地,製作合計厚度為35μm之絕緣層1與導電層4所組成二層構成之異方性導電膜4及接合體4。
就所製作的異方性導電膜4及接合體4,與實施例1同樣地測定剝離強度、及導通電阻。結果如表1所示。
-導電層4之製作-
調製含有:苯氧基樹脂(商品名:YP-50,東都化成股份有限公司製)45質量份、胺基甲酸酯丙烯酸酯(商品名:U-2PPA,新中村化學股份有限公司製)20質量份、雙官能基丙烯酸單體(商品名:A-200,新中村化學股份有限公司製)20質量份、單官能基丙烯酸單體(商品名:4-HBA,大阪有機化學工業股份有限公司製)10質量份、磷酸酯型丙烯酸酯(商品名:PM-2,日本化藥股份有限公司製)2質量份、作為有機過氧化物之過氧化苯甲醯(日油股份有限公司製)3質量份、作為有機過氧化物之過氧化二月桂醯(日油股份有限公司製)3質量份、製造例1之鎳粒子(平均粒徑3μm)2.8質量份、及製造例3之鍍鎳樹脂粒子(平均粒徑10μm,樹脂芯:苯乙烯-二乙烯苯共聚物)3.8質量份的乙酸乙酯與甲苯之混合溶液,以使固體成分成為50質量%。
接著,將該混合溶液塗布於厚度50μm之聚對酞酸乙二酯(PET)薄膜上後,藉由以80℃之烤爐乾燥5分鐘,剝離PET薄膜,來製作厚度17μm之導電層4。
(實施例5)
<異方性導電膜5之製作>
除了在實施例1中,將導電層1替代以下述導電層5以外,其他則與實施例1同樣地,製作合計厚度為35μm之由絕緣層1與導電層5所組成二層構成之異方性導電膜5及接合體5。
就所製作的異方性導電膜5及接合體5,與實施例1同樣地,測定剝離強度、及導通電阻。結果如表1所示。
-導電層5之製作-
調製含有:苯氧基樹脂(商品名:YP-50,東都化成股份有限公司製)45質量份、胺基甲酸酯丙烯酸酯(商品名:U-2PPA,新中村化學股份有限公司製)20質量份、雙官能基丙烯酸單體(商品名:A-200,新中村化學股份有限公司製)20質量份、單官能基丙烯酸單體(商品名:4-HBA,大阪有機化學工業股份有限公司製)10質量份、磷酸酯型丙烯酸酯(商品名:PM-2,日本化藥股份有限公司製)2質量份、作為有機過氧化物之過氧化苯甲醯(日油股份有限公司製)3質量份、作為有機過氧化物之過氧化二月桂醯(日油股份有限公司製)3質量份、製造例1之鎳粒子(平均粒徑3μm)1.9質量份、及製造例4之鍍鎳/金樹脂粒子A(平均粒徑10μm,樹脂芯:苯乙烯-二乙烯苯共聚物)1.1質量份的乙酸乙酯與甲苯混合溶液,以使固體成分成為50質量%。
接著,將該混合溶液塗布於厚度50μm之聚對酞酸乙二酯(PET)薄膜上後,藉由以80℃之烤爐乾燥5分鐘,剝離PET薄膜,來製作厚度17μm之導電層5。
(比較例1)
<異方性導電膜6之製作>
除了在實施例1中,將導電層1替代以下述導電層6以外,其他則與實施例1同樣地,製作合計厚度為35μm之由絕緣層1與導電層6所組成二層構成之異方性導電膜6及接合體6。
就所製作的異方性導電膜6及接合體6,與實施例1同樣地,測定剝離強度、及導通電阻。結果如表1所示。
-導電層6之製作-
調製含有:苯氧基樹脂(商品名:YP-50,東都化成股份有限公司製)45質量份、胺基甲酸酯丙烯酸酯(商品名:U-2PPA,新中村化學股份有限公司製)20質量份、雙官能基丙烯酸單體(商品名:A-200,新中村化學股份有限公司製)20質量份、單官能基丙烯酸單體(商品名:4-HBA,大阪有機化學工業股份有限公司製)10質量份、磷酸酯型丙烯酸酯(商品名:PM-2,日本化藥股份有限公司製)2質量份、作為有機過氧化物之過氧化苯甲醯(日油股份有限公司製)3質量份、作為有機過氧化物之過氧化二月桂醯(日油股份有限公司製)3質量份、及製造例1之鎳粒子(平均粒徑3μm)2.8質量份的乙酸乙酯與甲苯之混合溶液,以使固體成分成為50質量%。
接著,將該混合溶液塗布於厚度50μm之聚對酞酸乙二酯(PET)薄膜上後,藉由以80℃之烤爐乾燥5分鐘,並剝離PET薄膜,來製作厚度17μm之導電層6。
(比較例2)
<異方性導電膜7之製作>
除了在實施例1中,導電層1係替代以下述導電層7以外,其他則與實施例1同樣地,製作由合計厚度為35μm之絕緣層1與導電層7所組成二層構成之異方性導電膜7及接合體7。
就所製作的異方性導電膜7及接合體7,與實施例1同樣地,測定剝離強度、及導通電阻。結果如表1所示。
-導電層7之製作-
調製含有:苯氧基樹脂(商品名:YP-50,東都化成股份有限公司製)45質量份、胺基甲酸酯丙烯酸酯(商品名:U-2PPA,新中村化學股份有限公司製)20質量份、雙官能基丙烯酸單體(商品名:A-200,新中村化學股份有限公司製)20質量份、單官能基丙烯酸單體(商品名:4-HBA,大阪有機化學工業股份有限公司製)10質量份、磷酸酯型丙烯酸酯(商品名:PM-2,日本化藥股份有限公司製)2質量份、作為有機過氧化物之過氧化苯甲醯(日油股份有限公司製)3質量份、作為有機過氧化物之過氧化二月桂醯(日油股份有限公司製)3質量份、及製造例4之鍍鎳/金樹脂粒子A(平均粒徑10μm,樹脂芯:苯乙烯-二乙烯苯共聚物)3.8質量份的乙酸乙酯與甲苯之混合溶液,以使固體成分含有50質量%。
接著,將該混合溶液塗布於厚度50μm之聚對酞酸乙二酯(PET)薄膜上後,藉由以80℃之烤爐乾燥5分鐘,剝離PET薄膜,來製作厚度17μm之導電層7。
(比較例3)
<異方性導電膜8之製作>
除了在實施例3中,將絕緣層1替代以下述絕緣層2以外,其他則與實施例3同樣地,製作合計厚度為35μm之由絕緣層2與導電層3所組成二層構成之異方性導電膜8及接合體8。
就所製作的異方性導電膜8及接合體8,與實施例1同樣地,測定剝離強度、及導通電阻。結果如表1所示。
-絕緣層2之製作-
調製含有:苯氧基樹脂(商品名:YP-50,東都化成股份有限公司製)45質量份、胺基甲酸酯丙烯酸酯(商品名:U-2PPA,新中村化學股份有限公司製)20質量份、雙官能基丙烯酸單體(商品名:A-200,新中村化學股份有限公司製)20質量份、單官能基丙烯酸單體(商品名:4-HBA,大阪有機化學工業股份有限公司製)10質量份、磷酸酯型丙烯酸酯(商品名:PM-2,日本化藥股份有限公司製)2質量份、作為有機過氧化物之過氧化苯甲醯(日油股份有限公司製)3質量份、及作為有機過氧化物之過氧化二月桂醯(日油股份有限公司製)3質量份的乙酸乙酯與甲苯之混合溶液,以使固體成分成為50質量%。
接著,將該混合溶液塗布於厚度50μm之聚對酞酸乙二酯(PET)薄膜上後,藉由以80℃之烤爐乾燥5分鐘,剝離PET薄膜,來製作厚度18μm之絕緣層2。
(比較例4)
<異方性導電膜9之製作>
調製含有:苯氧基樹脂(商品名:YP-50,東都化成股份有限公司製)45質量份、胺基甲酸酯丙烯酸酯(商品名:U-2PPA,新中村化學股份有限公司製)20質量份、雙官能基丙烯酸單體(商品名:A-200,新中村化學股份有限公司製)20質量份、單官能基丙烯酸單體(商品名:4-HBA,大阪有機化學工業股份有限公司製)10質量份、磷酸酯型丙烯酸酯(商品名:PM-2,日本化藥股份有限公司製)2質量份、作為有機過氧化物之過氧化苯甲醯(日油股份有限公司製)3質量份、作為有機過氧化物之過氧化二月桂醯(日油股份有限公司製)3質量份、製造例1之鎳粒子(平均粒徑3μm)2.8質量份、及製造例4之鍍鎳/金樹脂粒子A(平均粒徑10μm,樹脂芯:苯乙烯-二乙烯苯共聚物)3.8質量份的乙酸乙酯與甲苯之混合溶液,以使固體成分成為50質量%。
接著,將該混合溶液塗布於厚度50μm之聚對酞酸乙二酯(PET)薄膜上後,藉由以80℃之烤爐乾燥5分鐘,剝離PET薄膜,來製作由厚度35μm之導電層3所組成異方性導電膜9。
使用該異方性導電膜9,與實施例1同樣地製作接合體9,且與實施例1同樣地測定剝離強度、及導通電阻。結果如表1所示。
(比較例5)
<異方性導電膜10之製作>
調製含有:苯氧基樹脂(商品名:YP-50,東都化成股份有限公司製)45質量份、胺基甲酸酯丙烯酸酯(商品名:U-2PPA,新中村化學股份有限公司製)20質量份、單官能基丙烯酸單體(商品名:4-HBA,大阪有機化學工業股份有限公司製)10質量份、磷酸酯型丙烯酸酯(商品名:PM-2,日本化藥股份有限公司製)2質量份、作為有機過氧化物之過氧化苯甲醯(日油股份有限公司製)3質量份、作為有機過氧化物之過氧化二月桂醯(日油股份有限公司製)3質量份、製造例2之鍍金的鎳粒子(平均粒徑3μm)2.8質量份、及製造例5之鍍鎳/金樹脂粒子B(平均粒徑10μm,樹脂芯:交聯聚苯乙烯)3.8質量份的乙酸乙酯與甲苯之混合溶液,以使固體成分成為50質量%。
接著,將該混合溶液塗布於厚度50μm之聚對酞酸乙二酯(PET)薄膜上後,藉由以80℃之烤爐乾燥5分鐘,剝離PET薄膜,來製作由厚度35μm之導電層8所組成異方性導電膜10。
使用該異方性導電膜10,與實施例1同樣地製作接合體10,且與實施例1同樣地測定剝離強度、及導通電阻。結果如表1所示。
由表1之結果可知,全部在130℃、3MPa、3秒等的低溫短時間條件下,實施例1至5、及比較例1、2、5,顯示高剝離強度,且接著性良好。
又,實施例1至5、及比較例1、4、5,初期導通電阻均低至0.06Ω以下,極為良好。
又,實施例3、4、及比較例3、4,均在高溫高濕環境(85℃、85%RH)下,1,000小時後之導通電阻低,極為良好。
又,在實施例1,係使用平均粒徑5μm之苯胍胺樹脂作為導電層之金屬被覆樹脂粒子之樹脂芯,雖然剝離強度及初期導通電阻良好,不過樹脂芯本身之排斥力較苯乙烯-二乙烯苯共聚物更大,在85℃、85%RH環境下,因樹脂芯之排斥力而造成黏合劑硬化物鬆弛,故在高溫高濕環境(85℃、85%RH)下,1,000小時後導通電阻些許變高。
又,在實施例2係使用交聯聚苯乙烯作為導電層之金屬被覆樹脂粒子之樹脂芯,剝離強度及初期導通電阻為良好,不過交聯聚苯乙烯之樹脂芯本身之排斥力較苯乙烯-二乙烯苯共聚物更大,在高溫高濕環境(85℃、85%RH)下,因其排斥力之影響,壓住粒子的黏合劑硬化物造成鬆弛,結果在1,000小時後之導通電阻些許變高。
又,在實施例3,係在絕緣層含有單官能基丙烯酸單體,在導電層含有鎳粒子與鍍鎳/金樹脂粒子A(樹脂芯:苯乙烯-二乙烯苯共聚物、平均粒徑10μm)為本發明之最佳態樣。
又,實施例4是使用柔軟的苯乙烯-二乙烯苯共聚物作為導電層之金屬被覆樹脂粒子之樹脂芯,因排斥力弱,故粒子之崩散良好,與粒子之電極接觸面積變大,即使僅為鍍鎳,在高溫高濕環境(85℃、85%RH)下,於1,000小時後,可獲得鍍金/鎳不太變化的等級低的導通電阻值。
又,在實施例5,相對於樹脂固體成分100質量份,鎳粒子與鍍鎳/金樹脂粒子A之合計量為2.9質量份,相對於樹脂固體成分100質量份,實施例3之鎳粒子與鍍鎳/金樹脂粒子A之合計量相較於6.4質量份為一半以下,故在高溫高濕環境(85℃、85%RH)下,1,000小時後之導通電阻變高。
相對於此,比較例1因在導電層僅含有鎳粒子,故剝離強度及初期導通電阻良好,不過在高溫高濕環境(85℃、85%RH)下,1,000小時後之導通電阻變高。
又,在比較例2,因於導電層並不含有鎳粒子,但含有鍍鎳/金樹脂粒子A,故初期導通電阻,些許高於實施例3(最佳態樣),在高溫高濕環境(85℃、85%RH)下,1,000小時後之導通電阻大幅上升。吾人認為此係由於僅是鍍鎳/金樹脂粒子A,並無法突破PWB樣板表面所形成的氧化膜而獲得導電性,故在高溫高濕環境(85℃、85%RH)下,在1,000小時後大幅上升。
又,比較例3因在絕緣層含有雙官能基丙烯酸單體,故在初期及高溫高濕環境(85℃、85%RH)下,1,000小時後之導通電阻為良好,故剝離強度因而降低。
又,比較例4導電層為單層,造成剝離強度降低。
又,在比較例5,係使日本特開平11-339558號公報之實施例再現之例,因導電層為單層,且硬化反應成分僅是單官能基單體,故黏合劑硬化物之玻璃轉換溫度(Tg)降低(>85℃),在高溫高濕環境(於85℃,85%RH)下,完全失去樹脂芯之硬粒子之排斥力,結果,1,000小時後導通電阻成為OPEN。又,在鎳粒子之外殻因成為柔軟的鍍金,故無法侵入端子內,亦難以突破氧化膜。但是,因反應成分僅單官能基單體,而使玻璃轉移溫度(Tg)降低,故剝離強度顯示高值。
【產業上可利用性】
本發明之異方性導電膜在低溫短時間條件中兼具高接著力與優異導通可靠度,故可適當使用於例如COF與PWB之連接、TCP與PWB之連接、COF與玻璃基板之連接、COF與COF之連接、IC基板與玻璃基板之連接、IC基板與PWB之連接等,電路構件彼此間之連接。
10...PWB(第一電路構件)
11...COF(第二電路構件)
11a...端子
12...異方性導電膜
12a...導電性粒子(鎳粒子、至少以鎳被覆的樹脂粒子)
20...剝離基材(隔片)
21‧‧‧導電層
22‧‧‧絕緣層
100‧‧‧接合體
第1圖係表示本發明之異方性導電膜之一例的概略圖。
第2圖係表示本發明之接合體之一例的概略圖。
第3圖係表示實施例中剝離強度之測定方法的說明圖。
第4圖係表示實施例中導通電阻之測定方法的說明圖。
10...PWB(第一電路構件)
11...COF(第二電路構件)
11a...端子
12...異方性導電膜
12a...導電性粒子(鎳粒子、至少以鎳被覆的樹脂粒子)
100...接合體
Claims (9)
- 一種異方性導電膜,其為至少具有導電層與絕緣層,其中,該絕緣層含有黏合劑、單官能基之聚合性單體、及硬化劑,該導電層含有鎳粒子、金屬被覆樹脂粒子、黏合劑、聚合性單體、及硬化劑,以及該金屬被覆樹脂粒子係至少以鎳被覆樹脂芯的樹脂粒子,其中,該導電層之厚度係介於10μm至25μm之間,該絕緣層之厚度係介於10μm至25μm之間,該金屬被覆樹脂粒子係以鎳被覆樹脂芯之樹脂粒子,及以鎳被覆樹脂芯、進一步以金被覆最表面的樹脂粒子中的任一種,該黏合劑係選自由苯氧基樹脂、環氧樹脂、不飽和聚酯樹脂、飽和聚酯樹脂、胺基甲酸酯樹脂、丁二烯樹脂、聚醯亞胺樹脂、聚醯胺樹脂及聚烯烴樹脂所組成之群組,該聚合性單體係選自由單官能基之(甲基)丙烯酸單體、苯乙烯單體及丁二烯單體所組成之群組。
- 如申請專利範圍第1項之異方性導電膜,其中樹脂芯之材料係苯乙烯-二乙烯苯共聚物或苯胍胺樹脂中的任一種。
- 如申請專利範圍第1項之異方性導電膜,其中金屬被覆樹脂粒子之平均粒徑為5μm以上。
- 如申請專利範圍第1至3項中任一項之異方性導電膜,其中相對於導電層之樹脂固體成分100質量份,鎳粒子及金屬被覆樹脂粒子之導電層中合計含量為3.0質量份至20 質量份。
- 一種接合體,其具備:一第一電路構件、一第二電路構件、及如申請專利範圍第1至4項中任一項之異方性導電膜,經由該異方性導電膜,該第一電路構件與該第二電路構件為接合。
- 如申請專利範圍第5項之接合體,其中第一電路構件為PWB(印刷配線板(Printed Wiring Board)),第二電路構件為COF(晶粒軟膜接合(chip on film))。
- 一種連接方法,其為在第一電路構件與第二電路構件之連接方法,係使用如申請專利範圍第1至4項中任一項之異方性導電膜,係被夾持於該第一電路構件與第二電路構件之間,藉由自該第一電路構件及第二電路構件加熱,同時壓製,而使該異方性導電膜硬化,並連接該第一電路構件與該第二電路構件。
- 如申請專利範圍第7項之連接方法,其中第一電路構件為PWB(印刷配線板(Printed Wiring Board)),第二電路構件為COF(晶粒軟膜接合(chip on film))。
- 如申請專利範圍第8項之連接方法,其係配置異方性導電膜之導電層在PWB(印刷配線板(Printed Wiring Board))側,使該異方性導電膜之絕緣層設在COF(晶粒軟膜接合(chip on film))側。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010019974A JP5833809B2 (ja) | 2010-02-01 | 2010-02-01 | 異方性導電フィルム、接合体及び接続方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201136761A TW201136761A (en) | 2011-11-01 |
TWI540048B true TWI540048B (zh) | 2016-07-01 |
Family
ID=44319196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100103367A TWI540048B (zh) | 2010-02-01 | 2011-01-28 | 異方性導電膜、接合體及連接方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20120261171A1 (zh) |
JP (1) | JP5833809B2 (zh) |
KR (2) | KR20150023072A (zh) |
CN (1) | CN102741943B (zh) |
TW (1) | TWI540048B (zh) |
WO (1) | WO2011093207A1 (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5556488B2 (ja) * | 2010-08-06 | 2014-07-23 | デクセリアルズ株式会社 | 対向電極接続用接着剤 |
WO2013042203A1 (ja) * | 2011-09-20 | 2013-03-28 | 日立化成株式会社 | 接着剤組成物、フィルム状接着剤、接着シート、回路接続体及び回路部材の接続方法 |
KR101479658B1 (ko) * | 2011-11-18 | 2015-01-06 | 제일모직 주식회사 | 가압착 공정성이 개선된 이방성 도전 필름 |
WO2013090344A1 (en) * | 2011-12-13 | 2013-06-20 | Ferro Corporation | Electrically conductive polymeric compositons, contacts, assemblies, and methods |
JP6218354B2 (ja) * | 2012-01-06 | 2017-10-25 | 積水化学工業株式会社 | 絶縁材料、多層フィルムの製造方法、積層体の製造方法、接続構造体及び接続構造体の製造方法 |
JP5956362B2 (ja) * | 2013-02-19 | 2016-07-27 | デクセリアルズ株式会社 | 異方性導電フィルム、接続方法、及び接合体 |
KR102125464B1 (ko) * | 2013-10-17 | 2020-06-23 | 삼성디스플레이 주식회사 | 이방성 도전 필름을 포함하는 표시 장치 및 이의 제조 방법 |
KR101628440B1 (ko) * | 2013-10-31 | 2016-06-08 | 제일모직주식회사 | 이방성 도전 필름 및 이를 이용한 반도체 장치 |
US10811166B2 (en) * | 2014-04-08 | 2020-10-20 | William Marsh Rice University | Production and use of flexible conductive films and inorganic layers in electronic devices |
JP6280017B2 (ja) * | 2014-10-03 | 2018-02-14 | デクセリアルズ株式会社 | 異方性導電フィルム、並びに、接続方法及び接合体 |
JP6457255B2 (ja) * | 2014-12-10 | 2019-01-23 | デクセリアルズ株式会社 | 接続体の検査方法、接続体、導電性粒子、異方性導電接着剤及び接続体の製造方法 |
GB2539697A (en) * | 2015-06-25 | 2016-12-28 | Lussey David | Improved conductive polymer |
KR101892341B1 (ko) | 2016-04-22 | 2018-08-27 | 삼성에스디아이 주식회사 | 이방성 도전 필름 |
JP7039883B2 (ja) * | 2016-12-01 | 2022-03-23 | デクセリアルズ株式会社 | 異方性導電フィルム |
KR101985499B1 (ko) * | 2017-12-28 | 2019-06-03 | 삼화콘덴서공업 주식회사 | 과전류 보호 기능을 가지는 금속 산화물 바리스터 |
KR102469299B1 (ko) | 2018-01-03 | 2022-11-23 | 삼성디스플레이 주식회사 | 표시 장치 |
JP7298256B2 (ja) * | 2019-04-11 | 2023-06-27 | 株式会社レゾナック | 導電粒子 |
CN110358469A (zh) * | 2019-07-18 | 2019-10-22 | 业成科技(成都)有限公司 | 粘结组件及显示装置 |
US11349053B1 (en) * | 2020-01-14 | 2022-05-31 | Facebook Technologies, Llc | Flexible interconnect using conductive adhesive |
CN113903257A (zh) * | 2021-09-27 | 2022-01-07 | 业成科技(成都)有限公司 | 可拉伸电子模组及其应用的电子装置 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3119230B2 (ja) * | 1998-03-03 | 2000-12-18 | 日本電気株式会社 | 樹脂フィルムおよびこれを用いた電子部品の接続方法 |
JPH11339558A (ja) | 1998-05-26 | 1999-12-10 | Sekisui Chem Co Ltd | 異方性導電接着剤及び導電接続構造体 |
JP2001297631A (ja) * | 2000-04-13 | 2001-10-26 | Asahi Kasei Corp | 異方導電性フィルム |
JP4400674B2 (ja) * | 2002-02-28 | 2010-01-20 | 日立化成工業株式会社 | 回路接続材料及びそれを用いた回路端子の接続構造 |
JP3940638B2 (ja) | 2002-06-10 | 2007-07-04 | 積水化学工業株式会社 | 導電性微粒子及び導電性微粒子の製造方法 |
JP4188278B2 (ja) | 2004-05-06 | 2008-11-26 | 日本化学工業株式会社 | 異方導電性フィルムおよびヒートシールコネクター |
JP2006233203A (ja) * | 2005-01-31 | 2006-09-07 | Asahi Kasei Electronics Co Ltd | 異方導電性接着剤フィルム |
KR100720895B1 (ko) | 2005-07-05 | 2007-05-22 | 제일모직주식회사 | 농도 구배를 갖는 이종(異種) 복합 금속층이 형성된 전도성미립자, 그 제조방법 및 이를 이용한 이방 전도성 접착제조성물 |
KR100719802B1 (ko) * | 2005-12-28 | 2007-05-18 | 제일모직주식회사 | 이방 전도 접속용 고신뢰성 전도성 미립자 |
JP5033332B2 (ja) | 2006-02-09 | 2012-09-26 | ソニーケミカル&インフォメーションデバイス株式会社 | 異方導電性接着剤、異方導電性接着フィルム及び電極の接続方法 |
JP2007242731A (ja) | 2006-03-06 | 2007-09-20 | Sekisui Chem Co Ltd | 接続構造体 |
WO2008115711A1 (en) * | 2007-03-16 | 2008-09-25 | 3M Innovative Properties Company | Dicing and die attach adhesive |
TWI389999B (zh) * | 2007-12-18 | 2013-03-21 | Cheil Ind Inc | 黏著性組成物及使用該黏著性組成物的各向異性導電膜 |
JP5049176B2 (ja) * | 2008-03-27 | 2012-10-17 | ソニーケミカル&インフォメーションデバイス株式会社 | 接合体及びその製造方法、並びに、異方性導電材料及びその製造方法 |
JP5226562B2 (ja) * | 2008-03-27 | 2013-07-03 | デクセリアルズ株式会社 | 異方性導電フィルム、並びに、接合体及びその製造方法 |
-
2010
- 2010-02-01 JP JP2010019974A patent/JP5833809B2/ja active Active
-
2011
- 2011-01-20 WO PCT/JP2011/051008 patent/WO2011093207A1/ja active Application Filing
- 2011-01-20 KR KR1020157003087A patent/KR20150023072A/ko active IP Right Grant
- 2011-01-20 KR KR1020127022779A patent/KR101640965B1/ko active IP Right Grant
- 2011-01-20 CN CN201180008066.XA patent/CN102741943B/zh active Active
- 2011-01-28 TW TW100103367A patent/TWI540048B/zh active
-
2012
- 2012-06-27 US US13/534,667 patent/US20120261171A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
TW201136761A (en) | 2011-11-01 |
KR20150023072A (ko) | 2015-03-04 |
CN102741943A (zh) | 2012-10-17 |
KR101640965B1 (ko) | 2016-07-19 |
KR20120124470A (ko) | 2012-11-13 |
CN102741943B (zh) | 2016-02-10 |
WO2011093207A1 (ja) | 2011-08-04 |
JP5833809B2 (ja) | 2015-12-16 |
US20120261171A1 (en) | 2012-10-18 |
JP2011159486A (ja) | 2011-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI540048B (zh) | 異方性導電膜、接合體及連接方法 | |
US8715833B2 (en) | Anisotropic conductive film | |
TWI463575B (zh) | Manufacturing method of semiconductor device | |
TWI629691B (zh) | 電路連接材料、連接體以及製造連接體的方法 | |
KR20100100792A (ko) | 비전도성 접착제 조성물 및 필름 및 제조 방법 | |
KR20190087365A (ko) | 실장체의 제조 방법, 접속 방법 및 이방성 도전막 | |
JP5972564B2 (ja) | 接続方法、接続構造体、異方性導電フィルム及びその製造方法 | |
JP5844588B2 (ja) | 回路接続材料及びそれを用いた接続方法並びに接続構造体 | |
JP6505423B2 (ja) | 実装体の製造方法、及び異方性導電フィルム | |
TWI539470B (zh) | An anisotropic conductive connecting material, a film laminate, a connecting method, and a connecting structure | |
JP5844589B2 (ja) | 異方性導電フィルム及びそれを用いた接続方法並びに接続構造体 | |
JP5966069B2 (ja) | 異方性導電フィルム、接合体及び接続方法 | |
JP6442628B2 (ja) | 異方性導電フィルム、並びに、接合体の製造方法及び接合体 | |
JP4055583B2 (ja) | 回路接続用接着剤組成物、これを用いた回路端子の接続方法及び回路端子の接続構造 | |
WO2018150897A1 (ja) | 異方性導電接続構造体、異方性導電接続構造体の製造方法、異方性導電フィルム、及び異方性導電ペースト | |
JP4378788B2 (ja) | Icチップの接続方法 | |
JP6286473B2 (ja) | 接合体 | |
WO2020203295A1 (ja) | 接着剤組成物 | |
JP5924896B2 (ja) | 接合体の製造方法 | |
JP6280017B2 (ja) | 異方性導電フィルム、並びに、接続方法及び接合体 | |
KR20140078146A (ko) | 이방성 도전 필름의 제조 방법과 그 이방성 도전 필름 및 이를 이용한 표시 장치 | |
WO2015133211A1 (ja) | 接続構造体、接続構造体の製造方法、及び回路接続材料 |