TWI538764B - The construction of ceramic plate and metal cylinder element - Google Patents
The construction of ceramic plate and metal cylinder element Download PDFInfo
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- TWI538764B TWI538764B TW104108034A TW104108034A TWI538764B TW I538764 B TWI538764 B TW I538764B TW 104108034 A TW104108034 A TW 104108034A TW 104108034 A TW104108034 A TW 104108034A TW I538764 B TWI538764 B TW I538764B
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- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/18—Dissimilar materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
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Description
本發明是關於一種陶瓷板與金屬製圓筒元件之接合構造。
靜電吸盤作為保持元件,用來吸附晶圓,在半導體製程中控制晶圓的溫度。一般習知,作為此種靜電吸盤(關於範例,請見專利文獻1),在設有氣體導入孔的圓板狀陶瓷板的背面側,接合上金屬製的氣體導入圓管,對晶圓的吸附面供給氦氣等,提高熱傳導性。
然而,作為陶瓷板與金屬製氣體導入圓管的接合方法,如第7圖所示,一般習知的焊接方法(關於範例,請見專利文獻2)為,在陶瓷板110和氣體導入圓管120之間填充焊料,並且,從氣體導入圓管120的側面塗布焊料到靜電吸盤的背面。焊接後,焊料為魚排狀的焊接部124。陶瓷板110與氣體導入圓管120之間因為熱膨脹的差別而產生應力,但為了讓應力盡可能地小,以熱膨脹係數接近陶瓷板110的金屬來形成氣體導入圓管120。
[專利文獻1]日本特開2004-297103號公報
[專利文獻2]日本特開2000-219578號公報(第3圖)
不過,在第7圖的接合構造中,即使使用熱膨脹係數接近陶瓷板110的金屬來形成氣體導入圓管120,使用靜電吸盤時被施以熱循環,接合部有時會產生剝落的現象。其原因為,當氣體導入圓管120、焊接部124冷卻時,其收縮的程度比陶瓷板110還大。因此,有時在反覆數次的熱循環之後,陶瓷板110便開始產生裂痕,無法維持氣密性,在氣體導入孔產生漏洞。另一方面,在陶瓷板110的背面,除了氣體導入圓管120之外,常常將比陶瓷板110的半徑稍小的金屬環(未圖示)被焊接上去,此金屬環和陶瓷板110的接合部也會如上所述,也會有產生裂痕而無法維持氣密性的問題。
本發明為解決此種課題的發明,主要目的為,在陶瓷板和金屬製圓筒元件之接合構造中,提高對熱循環的耐久性。
本發明之接合構造為陶瓷板與金屬製圓筒元件之接合構造,其特徵為包括:凸緣,形成於上述圓筒元件之端部;環狀堆塊,設置於上述陶瓷板中與上述凸緣相向之位置;及焊接部,形成於上述凸緣與上述堆塊之間;上述凸緣的寬度在3mm以上,厚度在0.5mm以上及2mm以下,在上述堆塊中,與上述凸緣之外緣相向的角的倒角為C倒角或R倒角。
在此接合構造中,圓筒元件的凸緣和陶瓷板的環
狀堆塊藉由焊接部接合在一起。又,凸緣的大小、厚度在適宜的數值範圍內,在堆塊中,與凸緣的外緣相向的角的倒角為C倒角或R倒角。因此,在堆塊的側面可受到圓筒元件與陶瓷板的熱膨脹差所造成的應力,成為可對抗應力的堅固構造。又,接合面積變大,密封距離變長。於是,即使在具有此種接合構造的接合體上反覆進行數次的熱循環,也可抑制接合部分產生裂痕。因此,藉由此種接合構造,可提高對熱循環的耐久性。
在本發明之接合構造中,上述堆塊的高度宜在0.5mm以上。藉此,可進一步提高對熱循環的耐久性。
在本發明之接合構造中,當上述堆塊中與上述凸緣之外緣相向的角的倒角為C倒角時,宜在C0.3以上,當為R倒角時,宜在R0.3以上。藉此,可進一步提高對熱循環的耐久性。
在本發明之接合構造中,上述陶瓷板宜為氮化鋁製,上述圓筒元件宜為鐵鎳鈷合金製,上述焊接部宜由含有銀、銅及鈦的材料或鋁焊料形成。藉由採用此種材料的組合,可更確實地得到發明的效果。
在本發明之接合構造中,上述陶瓷板宜具有開口於上述環狀堆塊內側且貫通厚度方向的氣體導入孔,上述圓筒元件宜為對上述氣體導入孔供給氣體的導入圓管。藉此,即使在經歷熱循環之後,可防止從氣體導入圓管供給的氣體洩漏至氣體導入圓管或氣體導入孔的外側。
在本發明之接合構造中,上述環狀堆塊宜沿著上述陶瓷板的外周緣形成,上述圓筒元件宜為支持上述陶瓷板的
支持環。藉此,即使在經歷熱循環之後,也可維持支持環內部的氣密性。
1‧‧‧半導體製造裝置用元件
2‧‧‧小室
10‧‧‧基座
10a‧‧‧晶圓載置面
10b‧‧‧背面
12‧‧‧氣體導入孔
13‧‧‧圓周溝
14‧‧‧圓管接合用堆塊
16‧‧‧金屬環接合用堆塊
20‧‧‧氣體導入圓管
22‧‧‧凸緣
24‧‧‧圓管焊接部
30‧‧‧支持環
32‧‧‧凸緣
34‧‧‧金屬環焊接部
50‧‧‧堆塊
52‧‧‧氣體導入孔
52a‧‧‧開口
54‧‧‧圓管接合用堆塊
60‧‧‧平板
66‧‧‧金屬環接合用堆塊
70‧‧‧金屬環
72‧‧‧凸緣
74‧‧‧金屬環焊接部
110‧‧‧陶瓷板
120‧‧‧氣體導入圓管
124‧‧‧焊接部
第1圖為表示半導體製造裝置用元件1之概略構造的剖面圖。
第2圖為第1圖的A部放大圖。
第3圖為第1圖的B部放大圖。
第4圖為其他實施型態的部分放大剖面圖。
第5圖為測試用樣本的剖面圖。
第6圖為測試用樣本的剖面圖。
第7圖為習知之接合構造的剖面圖。
以下將參照圖面說明本發明之最佳實施型態。第1圖為表示半導體製造裝置用元件1之概略構造的剖面圖。第2圖為第1圖的A部放大圖。第3圖為第1圖的B部放大圖。
半導體製造裝置用元件1如第1圖所示,設置於小室2的內部。此半導體製造裝置用元件1包括用來載置晶圓W之晶圓載置面10a被包含在內的基座10、將基座10之晶圓載置面10a與相反側之背面10b接合的小徑氣體導入圓管20、同樣將其接合至背面10b的大徑支持環30。又,半導體製造裝置用元件1於支持環30下端以氣密的狀態接合至小室2的內面。
基座10為圓板狀之氮化鋁製陶瓷板。此基座10
包括貫通厚度方向的氣體導入孔12。在氣體導入孔12的背面10b那側的開口的周圍,環狀的圓管接合用堆塊14設置於與氣體導入圓管20之凸緣22相向的位置。又,在基座10中與支持環30之凸緣32相向的位置,形成環狀之金屬環接合用堆塊16。金屬環接合用堆塊16沿著其外周緣,形成於比基座10的外周緣還稍稍內側的位置。
氣體導入圓管20為鐵鎳鈷合金製,如第2圖所示,於接合至基座10之背面10b的端部,具有凸緣22。鐵鎳鈷合金具有與氮化鋁相同的熱膨脹係數。亦即,氮化鋁的熱膨脹係數為4.3×10-6/℃(40℃~400℃),鐵鎳鈷合金的熱膨脹係數為9×10-6/℃(40℃~400℃)。在凸緣22與圓管接合用堆塊14之間,形成圓管焊接部24。圓管焊接部24可採用銀-銅-鈦焊料或鋁焊料來形成。關於銀-銅-鈦焊料的熱膨脹係數,當其組成為銀之重量百分比63、銅之重量百分比32.25、鈦之重量百分比1.75時,其熱膨脹係數為18.5×10-6/℃(40℃~400℃),鋁焊料的熱膨脹係數為19.5×10-6/℃(40℃~400℃)。
支持環30為鐵鎳鈷合金製,如第3圖所示,於接合至基座10之背面10b的端部,具有凸緣32。此支持環30的直徑稍稍小於基座10的直徑。在凸緣32與金屬環接合堆塊16之間,形成金屬環焊接部34。金屬環焊接部34可採用銀-銅-鈦焊料或鋁焊料來形成。
凸緣22,32如第2及第3圖所示,寬度A在3mm以上,厚度B在0.5mm以上,2mm以下。當凸緣22,32的寬度A不滿3mm時,密封距離不足或接合面積不足,以致無法
維持氣密性,所以,並不良好。又,當凸緣22,32的厚度B超過2mm時,接合部分在熱循環時所產生的應力變得過大,接合部分產生裂痕,所以也不良好。當考慮此應力的大小時,凸緣22,32的厚度薄一點比較好,當厚度不滿0.5mm時,製造會變得困難,所以並不良好。
圓管接合用堆塊14及金屬環接合用堆塊16如第2及第3圖所示,段高宜在0.5mm以上,關於與凸緣22,32之外緣相向的角的倒角大小D,當其為C倒角時,宜為C0.3以上,當其為R倒角時,宜為R0.3以上。若滿足此條件,可充分提高對熱循環的耐久性。此外,在第2及第3圖中,各個堆塊14,16的角的倒角是以C倒角為例。
不過,即使各個堆塊14,16的段高C不滿0.5mm,相較於沒有各個堆塊14,16的情況,仍然提高對熱循環的耐久性。又,即使各個堆塊14,16的角的倒角大小D為C倒角時是不滿C0.3而為R倒角時是不滿R0.3,相較於沒有倒角的情況,仍可提高對熱循環的耐久性。
接著,說明以此種方式構造的半導體製造裝置用元件1的使用例。半導體製造裝置用元件1的用途為,配置於小室2內,藉由在此小室2內所產生的電漿對晶圓W表面進行蝕刻作用。此時,根據需要,透過氣體導入圓管20及氣體導入孔12對晶圓W的背面供給氦氣。藉此,晶圓W的均熱性提高。
在此,將本實施型態之構成要素與本發明之構成要素的對應關係說明清楚。本實施型態之基座10相當於本發明之
陶瓷板,氣體導入圓管20及支持環30分別相當於圓筒元件。
在以上詳述的本實施型態之半導體製造裝置用元件1中,氣體導入圓管20的凸緣22與基座10的圓管接合用堆塊14以圓管焊接部24來接合,支持環30的凸緣22與基座10的金屬環接合用堆塊16以金屬環焊接部34來接合。又,凸緣22,32的大小、厚度在適宜的數值範圍內,在堆塊14,16中,與凸緣22,32之外緣相向的角的倒角為C倒角或R倒角。因此,可在堆塊14,16的側面受到支持環30與基座10之間的熱膨脹差所產生的應力,成為可以對抗應力的堅固構造。又,接合面積變大,密封距離變長。於是,即使在具有此種接合構造的接合體上反覆進行數次的熱循環,也可抑制接合部分產生裂痕。因此,藉由此半導體製造裝置用元件1,可提高對熱循環的耐久性。
又,基座10為氮化鋁製,氣體導入圓管20、支持環30為鐵鎳鈷合金製,圓管焊接部24及金屬環焊接部34採用銀-銅-鈦焊料或鋁焊料來形成,所以,可降低熱膨脹差所產生的應力,確實提高對熱循環的耐久性。
再者,即使在經歷熱循環之後,可防止從氣體導入圓管20供給的氣體洩漏至氣體導入圓管20或氣體導入孔12的外側,進而維持支持環30內部的氣密性。
此外,本發明不受上述實施型態的任何限定,只要屬於本發明之技術範圍,可以為各種實施型態。
例如,亦可將上述之實施型態的基座10取代為埋設有靜電電極、加熱器電極及電漿產生電極中至少其中1個的
陶瓷板。
在上述之實施型態中,圓管接合用堆塊14的設置為從基座10之背面10b突出的狀態,但如第4圖所示,宜在背面10b中於氣體導入孔12的開口周邊設置圓周溝13,形成圓管接合用堆塊14。在此情況下,圓管接合用堆塊14的頂面高度與背面10b的高度相同。即使如此,也可得到與上述之實施型態相同的效果。此外,對於金屬環接合用堆塊16,也可形成相同的東西。亦即,可設置小徑的圓周溝和大徑的圓周溝,在兩溝之間設置金屬環接合用堆塊16。
在上述之實施型態中,基座10的材料採用氮化鋁,但亦可採用氮化鋁之外的陶瓷(例如,氧化鋁等)。在此情況下,氣體導入圓管20、支持環30的材料宜具有與基座10相同的熱膨脹係數(例如,選擇熱膨脹係數在基座10的材料的熱膨脹係數的±10%之內的材料)。又,圓管焊接部24、金屬環焊接部34的焊料一樣宜具有與基座10的材料相同的熱膨脹係數。
在上述之實施型態中,作為金屬製的圓筒元件,採用了氣體導入圓管20及支持環30,但亦可接合其他的圓筒元件。例如,可接合一種用來***熱電對以測定基座10之表面溫度的圓筒元件。
[測試用樣本No.1~16]
製作好第5圖所示之測試用樣本。換言之,首先準備好以基座10為模型的氮化鋁製堆塊50。在堆塊50上,設置以氣體
導入孔12為模型的氣體導入孔52及以圓管接合用堆塊14為模型的圓管接合用堆塊54。然後,透過圓管焊接部24,對圓管接合用堆塊54接合上鐵鎳鈷合金製的氣體導入圓管20的凸緣22,形成測試用樣本。焊料採用銀-銅-鈦焊料(銀之重量百分比為63,銅之重量百分比為32.25,鈦之重量百分比為1.75)。氣體導入圓管20採用內徑約7.5mm、外徑約9.5mm的圓管。作為測試用樣本,製作出具有表1所示之凸緣寬度A、凸緣厚度B、堆塊的段高C、倒角大小D的樣本No.1~16。
[評估]
對各樣本提供熱循環測試。在熱循環測試中,在大氣壓力下從150℃升溫至450℃,此後再降溫至150℃為1次循環,如
此進行50次循環。在熱循環測試後,確認接合部的密封性及根據剖面觀察所發現的裂痕。當確認接合部的密封性時,塞住氣體導入孔52的開口52a,從氣體導入圓管20的入口使用氦氣洩漏偵測器產生真空,從接合部側面吹入氦氣,再測定氦氣的洩漏量。若洩漏量不滿臨限值(在此為1×10-8Pa.m3/sec),判斷為密封性良好,若在臨限值以上,判斷為密封性不良。然後,當密封性良好且剖面觀察的結果為無裂痕時,評估為「OK」,當密封性不良或剖面觀察的結果為有裂痕時,評估為「NG」,該結果如表1所示。
從樣本No.1~4的評估結果可知,若凸緣寬度A在3mm以上,接合面積變得夠大且密封距離變得夠長,所以,密封性良好,找不到裂痕。
從樣本No.5~8的評估結果可知,若凸緣厚度B在2mm以下,在熱循環測試中不會產生很大的應力,所以,密封性良好,找不到裂痕。此外,當凸緣厚度B比0.5mm薄時,製造會變得困難。
從樣本No.9~12的評估結果可知,若圓管接合用堆塊的段高C在0.5mm以上,在熱循環測試中所產生的應力會得到緩和,所以,密封性良好,找不到裂痕。
從樣本No.13~16的評估結果可知,若倒角大小D(在此為C倒角)在0.3mm以上(亦即C0.3以上),在熱循環測試中所產生的應力會得到緩和,所以,密封性良好,找不到裂痕。又,當採用R倒角而不採用C倒角時,可得到同樣的結果。
此外,不具有圓管接合用堆塊54的堆塊50及不
具有凸緣22的氣體導入圓管20以上述銀-銅-鈦焊料來接合,形成第7圖所示之接合構造,如此製作出樣本,在對其提供熱循環測試後,進行密封性的確認,發現洩漏量超過臨限值(密封性不良)。又,當進行剖面觀察時,發現產生了第7圖之虛線所示的裂痕。
[測試用樣本No.17~24]
製作好第6圖所示之測試用樣本。換言之,首先準備好以基座10為模型的氮化鋁製平板60、以支持環30為模型的鐵鎳鈷合金製金屬環70。在平板60上,設置以金屬環接合用堆塊16為模型的金屬環接合用堆塊66,在金屬環70上,設置以凸緣32為模型的凸緣72。然後,透過金屬環焊接部74,對金屬環接合用堆塊66接合上金屬環70的凸緣72,形成測試用樣本。焊料採用銀-銅-鈦焊料。又,關於金屬環70的大小,採用內徑約228mm、外徑約229.5mm的金屬環。作為測試用樣本,製作出具有表2所示之凸緣寬度A、凸緣厚度B、堆塊的段高C、倒角大小D的樣本No.17~24。
[評估]
對樣本No.17~24進行與樣本No.1~16相同的評估,該結果如表2所示。從樣本No.17,18的評估結果可知,若凸緣寬度A在3mm以上,接合面積變得夠大且密封距離變得夠長,所以,密封性良好,找不到裂痕。從樣本No.19,20的評估結果可知,若凸緣厚度B在2mm以下,在熱循環測試中不會產生很大的應力,所以,密封性良好,找不到裂痕。從樣本No.21,22的評估結果可知,若圓管接合用堆塊的段高C在0.5mm以上,在熱循環測試中所產生的應力會得到緩和,所以,密封性良好,找不到裂痕。從樣本No.23,24的評估結果可知,若倒角大小D(在此為C倒角)在0.3mm以上(亦即C0.3以上),在熱循環測試中所產生的應力會得到緩和,所以,密封性良好,找不到裂痕。又,當採用R倒角而不採用C倒角時,可得到同樣的結果。
本發明之申請是以2014年3月27日申請之日本專利申請第2014-065541號為主張優先權的基礎,透過引用,該說明書的所有內容均包含在本說明書內。
本發明可作為靜電吸盤、靜電吸盤加熱器、陶瓷加熱器等半導體製造裝置用元件來應用。
1‧‧‧半導體製造裝置用元件
2‧‧‧小室
10‧‧‧基座
10a‧‧‧晶圓載置面
10b‧‧‧背面
12‧‧‧氣體導入孔
16‧‧‧金屬環接合用堆塊
20‧‧‧氣體導入圓管
30‧‧‧支持環
Claims (8)
- 一種接合構造,其為陶瓷板與金屬製圓筒元件之接合構造,其特徵為包括:凸緣,形成於上述圓筒元件之端部;環狀堆塊,設置於上述陶瓷板中與上述凸緣相向之位置;及焊接部,形成於上述凸緣與上述堆塊之間;上述凸緣的寬度在3mm以上,厚度在0.5mm以上及2mm以下,在上述堆塊中,與上述凸緣之外緣相向的角的倒角為C倒角或R倒角。
- 如申請專利範圍第1項之接合構造,其中,上述堆塊的高度在0.5mm以上。
- 如申請專利範圍第1或2項之接合構造,其中,當上述堆塊中與上述凸緣之外緣相向的角的倒角為C倒角時,在C0.3以上,當為R倒角時,在R0.3以上。
- 如申請專利範圍第1或2項之接合構造,其中,上述陶瓷板為氮化鋁製,上述圓筒元件為鐵鎳鈷合金製,上述焊接部由含有銀、銅及鈦的材料或鋁焊料形成。
- 如申請專利範圍第1或2項之接合構造,其中,上述陶瓷板具有開口於上述堆塊內側且貫通厚度方向的氣體導入孔,上述圓筒元件為對上述氣體導入孔供給氣體的導入圓管。
- 如申請專利範圍第1或2項之接合構造,其中,上述堆塊沿著上述陶瓷板的外周緣形成,上述圓筒元件為支持上述陶 瓷板的支持環。
- 如申請專利範圍第1項之接合構造,其中,上述堆塊的高度在0.5mm以上,當上述堆塊中與上述凸緣之外緣相向的角的倒角為C倒角時,在C0.3以上,當為R倒角時,在R0.3以上,上述陶瓷板為氮化鋁製,並具有開口於上述堆塊內側且貫通厚度方向的氣體導入孔,上述圓筒元件為鐵鎳鈷合金製,並為對上述氣體導入孔供給氣體的導入圓管,上述焊接部由含有銀、銅及鈦的材料或鋁焊料形成。
- 如申請專利範圍第1項之接合構造,其中,上述堆塊的高度在0.5mm以上,當上述堆塊中與上述凸緣之外緣相向的角的倒角為C倒角時,在C0.3以上,當為R倒角時,在R0.3以上,且上述堆塊沿著上述陶瓷板的外周緣形成,上述陶瓷板為氮化鋁製,上述圓筒元件為鐵鎳鈷合金製,且為支持上述陶瓷板的支持環,上述焊接部由含有銀、銅及鈦的材料或鋁焊料形成。
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2015
- 2015-03-10 KR KR1020157036810A patent/KR101658749B1/ko active IP Right Grant
- 2015-03-10 CN CN201580001225.1A patent/CN105392758B/zh active Active
- 2015-03-10 WO PCT/JP2015/056892 patent/WO2015146563A1/ja active Application Filing
- 2015-03-10 JP JP2015544246A patent/JP5851665B1/ja active Active
- 2015-03-13 TW TW104108034A patent/TWI538764B/zh active
- 2015-12-10 US US14/964,977 patent/US9583372B2/en active Active
Also Published As
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KR20160009074A (ko) | 2016-01-25 |
WO2015146563A1 (ja) | 2015-10-01 |
CN105392758A (zh) | 2016-03-09 |
CN105392758B (zh) | 2019-04-09 |
JPWO2015146563A1 (ja) | 2017-04-13 |
US9583372B2 (en) | 2017-02-28 |
TW201603934A (zh) | 2016-02-01 |
JP5851665B1 (ja) | 2016-02-03 |
US20160099164A1 (en) | 2016-04-07 |
KR101658749B1 (ko) | 2016-09-21 |
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