TWI508273B - 影像感測元件封裝構件及其製作方法 - Google Patents

影像感測元件封裝構件及其製作方法 Download PDF

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Publication number
TWI508273B
TWI508273B TW100109413A TW100109413A TWI508273B TW I508273 B TWI508273 B TW I508273B TW 100109413 A TW100109413 A TW 100109413A TW 100109413 A TW100109413 A TW 100109413A TW I508273 B TWI508273 B TW I508273B
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Taiwan
Prior art keywords
image sensing
layer
package member
device package
sensing device
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TW100109413A
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English (en)
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TW201143074A (en
Inventor
Shu Ming Chang
Tien Hao Huang
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Xintec Inc
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Publication of TW201143074A publication Critical patent/TW201143074A/zh
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Publication of TWI508273B publication Critical patent/TWI508273B/zh

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Description

影像感測元件封裝構件及其製作方法
本發明係有關於光學元件封裝技術領域，特別是有關於一種具備多層重佈線路(multi-layer RDL)的影像感測元件封裝構件及其製作方法。
近年來，固態影像感測元件已被大量運用在手機、汽車以及電腦產業，然而，當固態影像感測元件朝向更高的圖元解析度與更小的圖元尺寸發展時，良率卻受到衝擊，而相機模組在組裝過程中的物理性污染，也會降低良率。因此，封裝半導體晶粒逐漸成為在業界中被廣泛採用的方案。其中，由於晶圓級技術在製程上具備經濟效益，逐漸成為較佳的解決方案。
晶圓級封裝較具挑戰性的層面之一，就是內部連結設計。在頂部、側面、底部接點三種選擇中，又以底部接點最具吸引力，因為它能使影像感測晶粒能正面朝上，以配合相機模組組裝所需的方向。由於高解析度影像感測器越來越需要高密度焊接墊，因此和焊接墊相容的直通矽晶穿孔技術(through silicon via，簡稱為TSV)也隨之受到注目。
本發明之主要目的即在提供一種採用直通矽晶穿孔技術及具備多層重佈線路的影像感測元件封裝構件及其製作方法。
本發明較佳實施例提供一種影像感測元件封裝構件，包含有：一影像感測晶粒，其具有一主動面以及相對於該主動面的一背面，且在該主動面上設有一影像感測元件區域以及一外接墊；一直通矽晶穿孔結構，貫穿該影像感測晶粒，連接該外接墊；一第一絕緣層，形成在該影像感測晶粒的該背面及該矽晶穿孔結構內；一第一重佈線路層，形成在該第一絕緣層上並與該外接墊電連接；一第二絕緣層，覆蓋該第一重佈線路層及該第一絕緣層；一第二重佈線路層，形成在該第二絕緣層上並與該第一重佈線路層電連接；以及一防焊層，覆蓋在該第二重佈線路層及該第二絕緣層上。
從另一角度來看，本發明提供一種影像感測元件封裝構件，包含有：一影像感測晶粒，其具有一主動面以及相對於該主動面的一背面，且在該主動面上設有一影像感測元件區域以及一外接墊；一直通矽晶穿孔結構，貫穿該影像感測晶粒，連接該外接墊；複數層重佈線路，形成在該像感測晶粒的該背面上；以及一防焊層，覆蓋在該複數層重佈線路上。其中在該防焊層中設有至少一開孔，曝露出一焊接墊，並在該焊接墊上設有一焊接錫球。在該防焊層中設有複數個假開孔，用來釋放應力。該複數層重佈線路至少包含有一防電磁干擾金屬圖案。
為讓本發明之上述目的、特徵及優點能更明顯易懂，下文特舉較佳實施方式，並配合所附圖式，作詳細說明如下。然而如下之較佳實施方式與圖式僅供參考與說明用，並非用來對本發明加以限制者。
本發明運用創新的連結技術，貫穿矽晶層直接連結至影像感測晶粒的外接墊；小巧的尺寸與連結的位置，讓封裝背面可支援高密度的球閘陣列封裝介面，使後續的封裝相容於表面黏著組裝製程。本發明可以相容於晶圓級封裝(wafer-level packaging，簡稱為WLP)製程並且採用直通矽晶穿孔技術，其中所謂的晶圓級封裝製程係在晶圓狀態時就封裝晶粒，再進行後段組裝製程，然後，晶圓再進行切割，成為獨立封裝晶粒。
請參閱第1圖，其為依據本發明一較佳實施例所繪示的影像感測元件封裝構件的剖面示意圖。如第1圖所示，影像感測元件封裝構件1包含有一影像感測晶粒10，其具有一主動面10a以及相對於主動面(active side)10a的一背面(backside)10b，且在主動面10a上設有一影像感測元件區域11以及外接墊12。影像感測元件區域11可以是CMOS影像感測元件，但不限於此。
在影像感測晶粒10的主動面10a上另覆蓋一封裝用光學蓋板20，例如，透鏡等級玻璃或石英，而在封裝用光學蓋板20與影像感測晶粒10的主動面10a之間另設有支撐堰體結構22，例如，環氧樹脂(epoxy resin)、聚亞醯胺(polyimide)、光阻或防焊阻劑(solder resist)材料等等，如此使光學蓋板20、支撐堰體結構22與影像感測晶粒10的主動面10a之間構成一密閉的凹穴結構24，而影像感測元件區域11就是位於凹穴結構24內部。此外，支撐堰體結構22與影像感測晶粒10的主動面10a之間可以利用接合材料(圖未示)進行黏合。
根據本發明之較佳實施例，影像感測元件封裝構件1另包含有一直通矽晶穿孔(TSV)結構13，其貫穿影像感測晶粒10，並連通影像感測晶粒10的主動面10a與背面10b，用來曝露出位於影像感測晶粒10的主動面10a上部分的外接墊12。在影像感測晶粒10的背面10b以及矽晶穿孔結構13的側壁上則順應的形成有第一絕緣層14，例如，氧化矽、氮化矽或氮氧化矽等等。此外，第一絕緣層14也可以採用有機高分子絕緣材料。
在第一絕緣層14上形成有一第一重佈線路層15，例如，鋁金屬線路圖案或者銅金屬線路圖案。第一重佈線路層15順應的覆蓋在矽晶穿孔結構13的側壁上以及底部，並且與外接墊12電連接。此外，第一重佈線路層15至少包含有一連接墊15a。在第一重佈線路層15以及第一絕緣層14上另有一第二絕緣層16，例如，氧化矽、氮化矽或氮氧化矽等等。第二絕緣層16也可以採用有機高分子絕緣材料。在第二絕緣層16中設有至少一開孔16a，曝露出部分的連接墊15a。
在第二絕緣層16上形成有一第二重佈線路層17，例如，鈦、銅、鎳、金、鋁或上述金屬之組合。第二重佈線路層17可以是由可焊接(soldable)金屬材料所構成者。第二重佈線路層17與第一重佈線路層15可以採用相同的導電材料或者不同的導電材料，也可以是不同的厚度。第二重佈線路層17填入開孔16a，並與曝露出的連接墊15a電連接。第二重佈線路層17至少包含有一焊接墊(solder pad)17a。在第二重佈線路層17以及第二絕緣層16上另有一防焊層18，例如，環氧樹脂、聚亞醯胺、光阻等等。在防焊層18中設有至少一開孔18a，曝露出部分的焊接墊17a。在焊接墊17a上則設有焊接錫球19。
請參閱第2圖，其為依據本發明另一較佳實施例所繪示的影像感測元件封裝構件的剖面示意圖。如第2圖所示，影像感測元件封裝構件1a同樣包含有一影像感測晶粒10，其具有一主動面10a以及相對於主動面10a的一背面10b，且在主動面10a上設有一影像感測元件區域11以及外接墊12。
同樣的，影像感測元件封裝構件1a包含有一直通矽晶穿孔結構13，其貫穿影像感測晶粒10，並連通影像感測晶粒10的主動面10a與背面10b，用來曝露出位於影像感測晶粒10的主動面10a上部分的外接墊12。在影像感測晶粒10的背面10b以及矽晶穿孔結構13的側壁上則順應的形成有第一絕緣層14，例如，氧化矽、氮化矽或氮氧化矽等等。第一絕緣層14也可以採用有機高分子絕緣材料。
根據本發明之另一較佳實施例，在第一絕緣層14上形成有一第一重佈線路層15，例如，鋁金屬線路圖案或者銅金屬線路圖案。第一重佈線路層15順應的覆蓋在矽晶穿孔結構13的側壁上以及底部，並且與外接墊12電連接。此外，第一重佈線路層15至少包含有一連接墊15a以及一防電磁干擾金屬圖案15b。在第一重佈線路層15以及第一絕緣層14上另有一第二絕緣層16，例如，氧化矽、氮化矽或氮氧化矽等等。在第二絕緣層16設有至少一開孔16a，曝露出部分的連接墊15a。
在第二絕緣層16上形成有一第二重佈線路層17，例如，鈦、銅、鎳、金、鋁或上述金屬之組合。第二重佈線路層17填入開孔16a，並與曝露出的連接墊15a電連接。第二重佈線路層17至少包含有一焊接墊17a。在第二重佈線路層17以及第二絕緣層16上另有一防焊層18，例如，環氧樹脂、聚亞醯胺、光阻等等。在防焊層18設有至少一開孔18a，曝露出部分的焊接墊17a。在焊接墊17a上則設有焊接錫球19。此外，在防焊層18設有複數個假開孔(dummy openings)18b，其中，假開孔18b可以是圓形、矩形、長條形、鋸齒形或不規則形狀。
第2圖中的影像感測元件封裝構件1a與第1圖中的影像感測元件封裝構件1的差別在於：(1)第2圖中的影像感測元件封裝構件1a具有一防電磁干擾金屬圖案15b，可以保護影像感測晶粒10免受電磁干擾；以及(2)第2圖中的影像感測元件封裝構件1a在防焊層18設有複數個假開孔18b，可以釋放形成在影像感測晶粒10的背面10b上的絕緣層所產生的應力，也可以用來作為破裂停止(crack stop)機制。
請參閱第3圖，其為依據本發明又另一較佳實施例所繪示的影像感測元件封裝構件的剖面示意圖。如第3圖所示，同樣的，在第二重佈線路層17以及第二絕緣層16上設有一防焊層18，例如，環氧樹脂、聚亞醯胺、光阻等等。在防焊層18設有至少一開孔18a，曝露出部分的焊接墊17a。在焊接墊17a上則設有焊接錫球19。在防焊層18設有複數個假開孔18b，其中，假開孔18b可以填入絕緣材料，以釋放影像感測晶粒10的背面10b上的應力。
第4圖至第11圖例示製作如第1圖中的影像感測元件封裝構件1的方法。首先，如第4圖所示，提供一影像感測晶圓100，其具有一主動面100a以及相對於主動面100a的一背面100b，且在主動面100a上設有至少一影像感測元件區域11以及外接墊12。影像感測元件區域11可以是CMOS影像感測元件，但不限於此。
在影像感測晶圓100的主動面100a上另覆蓋一封裝用光學蓋板20，例如，透鏡等級玻璃或石英，而在封裝用光學蓋板20與影像感測晶圓100的主動面100a之間另設有支撐堰體結構22，例如，環氧樹脂、聚亞醯胺、光阻或防焊阻劑材料等等，如此使光學蓋板20、支撐堰體結構22與影像感測晶圓100的主動面100a之間構成一密閉的凹穴結構24，而影像感測元件區域11就是位於凹穴結構24內部。此外，支撐堰體結構22與影像感測晶圓100的主動面100a之間可以利用接合材料(圖未示)進行黏合。接著，將影像感測晶圓100的背面100b研磨掉一預定厚度。
如第5圖所示，在完成晶圓晶背研磨製程之後，接著利用微影及蝕刻製程，從影像感測晶圓100的背面100b蝕刻出直通矽晶穿孔(TSV)結構13，其貫穿影像感測晶圓100，並連通影像感測晶圓100的主動面100a與背面100b，用來曝露出位於主動面100a上部分的外接墊12。
如第6圖所示，在影像感測晶圓100的背面100b以及矽晶穿孔結構13的側壁上順應的形成一第一絕緣層14，例如，氧化矽、氮化矽或氮氧化矽等等。第一絕緣層14也可以採用有機高分子絕緣材料。然後再利用微影及蝕刻製程，在矽晶穿孔結構13的底部上的第一絕緣層14中形成一開口14a，曝露出部分的外接墊12。
如第7圖所示，接下來，在第一絕緣層14上形成一第一重佈線路層15，例如，鋁金屬線路圖案或者銅金屬線路圖案。第一重佈線路層15順應的覆蓋在矽晶穿孔結構13的側壁上以及底部，並且與外接墊12電連接。此外，第一重佈線路層15至少包含有一連接墊15a。
如第8圖所示，接著，在第一重佈線路層15以及第一絕緣層14上形成一第二絕緣層16，例如，氧化矽、氮化矽或氮氧化矽等等。第二絕緣層16也可以採用有機高分子絕緣材料。然後再利用微影及蝕刻製程，在第二絕緣層16形成至少一開孔16a，曝露出部分的連接墊15a。
如第9圖所示，接下來，在第二絕緣層16上形成一第二重佈線路層17，例如，鈦、銅、鎳、金、鋁或上述金屬之組合。第二重佈線路層17也可以是由可焊接金屬材料所構成者。第二重佈線路層17與第一重佈線路層15可以採用相同的導電材料或者不同的導電材料，也可以是不同的厚度。第二重佈線路層17填入開孔16a，並與曝露出的連接墊15a電連接。第二重佈線路層17至少包含有一焊接墊17a。
如第10圖及第11圖所示，在第二重佈線路層17以及第二絕緣層16上形成一防焊層18，例如，環氧樹脂、聚亞醯胺、光阻等等。然後在防焊層18中形成至少一開孔18a，曝露出部分的焊接墊17a。然後，在開孔18a內的焊接墊17a上形成一焊接錫球19。最後，進行晶圓切割製程，形成如第1圖中的影像感測元件封裝構件1。熟習該項技藝人士應能理解第4圖至第11圖中雙層的重佈線路層的製作方法僅為示意，本發明並不限於雙層的重佈線路層，熟習該項技藝人士更可以利用所揭露的方法步驟形成多層的重佈線路層。
本發明的主要技術特徵至少包括：(1)採晶圓級封裝製程結合直通矽晶穿孔技術，並在影像感測晶粒的背面形成多層重佈線路，故在設計上允許更多數量的輸出輸入(I/O)接點，以及具備更彈性的線路佈局與成本上優勢；(2)在第一重佈線路層中可以形成防電磁干擾金屬圖案，可以保護影像感測晶粒免受電磁干擾；以及(3)在防焊層可以設有複數個假開孔，用來釋放絕緣層所產生的應力，也可以用來作為破裂停止機制。
以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。
1．．．影像感測元件封裝構件
1a．．．影像感測元件封裝構件
10．．．影像感測晶粒
10a．．．主動面
10b．．．背面
11．．．影像感測元件區域
12．．．外接墊
13．．．直通矽晶穿孔結構
14．．．第一絕緣層
15．．．第一重佈線路層
15a．．．連接墊
15b．．．防電磁干擾金屬圖案
16．．．第二絕緣層
16a．．．開孔
17．．．第二重佈線路層
17a．．．焊接墊
18．．．防焊層
18a．．．開孔
18b．．．假開孔
19．．．焊接錫球
20．．．封裝用光學蓋板
22．．．支撐堰體結構
24．．．凹穴結構
100．．．影像感測晶圓
100a．．．主動面
100b．．．背面
第1圖為依據本發明一較佳實施例所繪示的影像感測元件封裝構件的剖面示意圖。
第2圖為依據本發明另一較佳實施例所繪示的影像感測元件封裝構件的剖面示意圖。
第3圖為依據本發明又另一較佳實施例所繪示的影像感測元件封裝構件的剖面示意圖。
第4圖至第11圖例示本發明影像感測元件封裝構件的製作方法。
1．．．影像感測元件封裝構件
10．．．影像感測晶粒
10a．．．主動面
10b．．．背面
11．．．影像感測元件區域
12．．．外接墊
13．．．直通矽晶穿孔結構
14．．．第一絕緣層
15．．．第一重佈線路層
15a．．．連接墊
16．．．第二絕緣層
16a．．．開孔
17．．．第二重佈線路層
17a．．．焊接墊
18．．．防焊層
18a．．．開孔
19．．．焊接錫球
20．．．封裝用光學蓋板
22．．．支撐堰體結構
24．．．凹穴結構

Claims (18)

  1. 一種影像感測元件封裝構件，包含有：一影像感測晶粒，其具有一主動面以及相對於該主動面的一背面，且在該主動面上設有一影像感測元件區域以及一外接墊；一直通矽晶穿孔結構，貫穿該影像感測晶粒，連接該外接墊；複數層重佈線路，形成在該像感測晶粒的該背面上；以及一防焊層，覆蓋在該複數層重佈線路上，其中在該防焊層中設有複數個假開孔，用來釋放應力。
  2. 如申請專利範圍第1項所述之影像感測元件封裝構件，其中在該影像感測晶粒的該主動面上另覆蓋一封裝用光學蓋板。
  3. 如申請專利範圍第2項所述之影像感測元件封裝構件，其中在該封裝用光學蓋板與該影像感測晶粒的該主動面之間另設有一支撐堰體結構。
  4. 如申請專利範圍第3項所述之影像感測元件封裝構件，其中在該支撐堰體結構包含有環氧樹脂、聚亞醯胺、光阻或防焊阻劑。
  5. 如申請專利範圍第1項所述之影像感測元件封裝構件，其中在該防焊層中設有至少一開孔，曝露出一焊接墊，並在該焊接墊上設有一焊接錫球。
  6. 如申請專利範圍第1項所述之影像感測元件封裝構件，其中在該複數個假開孔內填入一絕緣材料。
  7. 如申請專利範圍第1項所述之影像感測元件封裝構件，其中該複數層重佈線路至少包含有一防電磁干擾金屬圖案。
  8. 一種影像感測元件封裝構件，包含有：一影像感測晶粒，其具有一主動面以及相對於該主動面的一背面，且在該主動面上設有一影像感測元件區域以及一外接墊；一直通矽晶穿孔結構，貫穿該影像感測晶粒，連接該外接墊；以及複數層重佈線路，形成在該像感測晶粒的該背面上，其中該複數層重佈線路至少包含有一防電磁干擾金屬圖案。
  9. 如申請專利範圍第8項所述之影像感測元件封裝構件，其中在該影像感測晶粒的該主動面上另覆蓋一封裝用光學蓋板。
  10. 如申請專利範圍第9項所述之影像感測元件封裝構件，其中在該封裝用光學蓋板與該影像感測晶粒的該主動面之間另設有一支撐堰體結構。
  11. 如申請專利範圍第10項所述之影像感測元件封裝構件，其中在 該支撐堰體結構包含有環氧樹脂、聚亞醯胺、光阻或防焊阻劑。
  12. 如申請專利範圍第8項所述之影像感測元件封裝構件，其中另包含有一防焊層，覆蓋在該複數層重佈線路上。
  13. 如申請專利範圍第12項所述之影像感測元件封裝構件，其中在該防焊層中設有至少一開孔，曝露出一焊接墊，並在該焊接墊上設有一焊接錫球。
  14. 一種影像感測元件封裝構件的製作方法，包含有：提供一晶圓，其具有至少一主動面及至少一背面，且在該主動面上設有至少一影像感測元件區域及一外接墊；於晶圓的該主動面上覆蓋一光學蓋板；從該晶圓的該背面蝕刻出至少一直通矽晶穿孔結構，其貫穿該晶圓，曝露出位於該主動面上部分的該外接墊；於該晶圓的該背面及該矽晶穿孔結構的側壁上順應的形成一第一絕緣層；於該矽晶穿孔結構內的該第一絕緣層中形成一開口，曝露出部分的該外接墊；於該第一絕緣層上形成一第一重佈線路層，且該第一重佈線路層與該外接墊電連接，其中該第一重佈線路層至少包含有一防電磁干擾金屬圖案；於該第一重佈線路層上形成一第二絕緣層； 於該第二絕緣層形成至少一第一開孔，曝露部分該第一重佈線路層；以及於該第二絕緣層上形成一第二重佈線路層，該第二重佈線路層經由該第一開孔與該第一重佈線路層電連接。
  15. 如申請專利範圍第14項所述之影像感測元件封裝構件的製作方法，其中形成一第二重佈線路層之後另包含以下步驟：於該第二重佈線路層上形成一防焊層；於該防焊層中形成至少一第二開孔，曝露出部分的該第二重佈線路層；以及於該第二開孔上形成一焊接錫球。
  16. 如申請專利範圍第15項所述之影像感測元件封裝構件的製作方法，其中形成該第二開孔的同時，於該防焊層中形成複數個假開孔。
  17. 如申請專利範圍第16項所述之影像感測元件封裝構件的製作方法，其中該複數個假開孔，係用來釋該第一、第二放絕緣層所產生的應力。
  18. 如申請專利範圍第16項所述之影像感測元件封裝構件的製作方法，其中在該複數個假開孔內填入一絕緣材料。
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