TWI502758B - Method for manufacturing solar cells - Google Patents
Method for manufacturing solar cells Download PDFInfo
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- TWI502758B TWI502758B TW102134124A TW102134124A TWI502758B TW I502758 B TWI502758 B TW I502758B TW 102134124 A TW102134124 A TW 102134124A TW 102134124 A TW102134124 A TW 102134124A TW I502758 B TWI502758 B TW I502758B
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- photoelectric conversion
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- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 238000000034 method Methods 0.000 title claims description 14
- 238000006243 chemical reaction Methods 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 27
- 239000004065 semiconductor Substances 0.000 claims description 25
- 125000006850 spacer group Chemical group 0.000 claims description 13
- 238000001771 vacuum deposition Methods 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000926 separation method Methods 0.000 claims description 6
- 238000005192 partition Methods 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 84
- 239000010408 film Substances 0.000 description 51
- 239000000463 material Substances 0.000 description 17
- 239000010409 thin film Substances 0.000 description 10
- 229910052732 germanium Inorganic materials 0.000 description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 230000000873 masking effect Effects 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000003698 laser cutting Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 229910004613 CdTe Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Description
本發明是有關於一種太陽能電池的製造方法，特別是指一種薄膜太陽能電池的製造方法。The present invention relates to a method of fabricating a solar cell, and more particularly to a method of fabricating a thin film solar cell.
由於太陽能是一種綠色、環保之能源，對於生態環境的破壞性相較於其他能源小，因此有愈來愈多國家鼓勵發展太陽能電池。而太陽能電池中，以矽為主要材料的電池可分為晶矽太陽能電池與非晶矽薄膜太陽能電池，其中，晶矽太陽能電池之光電轉換效率高，常運用於戶外或者可大面積設置之場合。但晶矽太陽能電池之製造成本較高，因此在一些小面積或者對於電池轉換效率要求不用太高的應用場合上，則可以選擇使用非晶矽薄膜太陽能電池，以符合使用需求並節省生產成本。Since solar energy is a green and environmentally friendly energy source, the destructiveness of the ecological environment is smaller than other energy sources, so more and more countries encourage the development of solar cells. In solar cells, batteries with ruthenium as the main material can be divided into wafer solar cells and amorphous germanium thin film solar cells. Among them, wafer solar cells have high photoelectric conversion efficiency, and are often used outdoors or in large-area settings. . However, the manufacturing cost of the wafer solar cell is relatively high, so in some small areas or applications where the conversion efficiency of the battery is not too high, an amorphous germanium thin film solar cell can be selected to meet the use requirements and save production cost.
非晶矽薄膜太陽能電池在製造上，必須於一基板上沈積一透明導電膜、p-i-n半導體層及背電極，而且該透明導電膜、p-i-n半導體層與該背電極沈積之後，都必須透過雷射或機械方式進行線路切割，以使位於同一基板上的該等薄膜可形成數個電池區塊，並且完成相鄰電池區塊之間的斷路線與短路線，使該數個電池區塊之間可形成正 、負極相接之串聯結構。其中，使用雷射蝕刻薄膜時，容易導致電池上之不需蝕刻的部位也受到損傷，例如蝕刻該透明導電膜時，雷射能量也會影響下方基板，造成該基板損傷。或者蝕刻該p-i-n半導體層時，則可能造成下方的該透明導電膜損傷。同理，蝕刻該背電極時，則可能會影響到下方的該p-i-n半導體層。上述之膜層損傷會造成電池品質不佳、轉換效率較低且易於損壞。In the manufacture of an amorphous germanium thin film solar cell, a transparent conductive film, a pin semiconductor layer and a back electrode must be deposited on a substrate, and the transparent conductive film, the pin semiconductor layer and the back electrode must be deposited through a laser or The circuit is cut in a mechanical manner so that the films on the same substrate can form a plurality of battery blocks, and the broken route and the short-circuit line between adjacent battery blocks are completed, so that the plurality of battery blocks can be Form positive The series structure in which the negative electrodes are connected. Among them, when a laser etched film is used, it is easy to cause damage to a portion of the battery that does not need to be etched. For example, when the transparent conductive film is etched, the laser energy also affects the underlying substrate, causing damage to the substrate. Alternatively, when the p-i-n semiconductor layer is etched, the underlying transparent conductive film may be damaged. Similarly, when etching the back electrode, the p-i-n semiconductor layer underneath may be affected. The above-mentioned film damage may result in poor battery quality, low conversion efficiency, and easy damage.
而且當利用雷射於該背電極及該p-i-n半導體層的對應位置同時蝕刻形成刻劃線溝時，該背電極材料會沿著該刻劃線溝處呈現熔融態，進而容易流入該刻劃線溝並接觸下方的該透明導電膜，造成短路。再者，由於該透明導電膜、半導體層與該背電極等膜層之材料不同，因此各層之特性、材料硬度皆不同，所以對各膜層進行雷射蝕刻時，必須依據各膜層性質而分別選用不同能量的雷射，在製作上較為麻煩。此外，每鍍完一層層體都必須將基板由真空腔體取出才能進行雷射切割，如此也造成麻煩。Moreover, when a scribed groove is simultaneously etched by using a laser at a corresponding position of the back electrode and the pin semiconductor layer, the back electrode material exhibits a molten state along the scribed groove, and thus easily flows into the scribe line. The groove contacts the underlying transparent conductive film to cause a short circuit. In addition, since the properties of the transparent conductive film, the semiconductor layer, and the film layer such as the back electrode are different, the properties of each layer and the hardness of the material are different. Therefore, when performing laser etching on each film layer, it is necessary to determine the properties of each film layer. Selecting different energy lasers is more troublesome in production. In addition, each time a layer of the layer is plated, the substrate must be taken out of the vacuum chamber to perform laser cutting, which also causes trouble.
另一方面，利用機械方式進行線路切割時，同樣會在切割上層薄膜時，不慎割到下層薄膜或下方的該基板而影響膜層與電池品質。機械切割方式也會使膜層材料沿著該刻劃線溝處呈現熔融態，進而造成膜層材料流入該刻劃線溝而形成短路。而且薄膜形成後還要額外進行機械切割加工，也造成麻煩。On the other hand, when the upper layer film is cut by the mechanical method, the lower layer film or the underlying substrate is inadvertently cut to affect the film layer and the battery quality. The mechanical cutting method also causes the film material to exhibit a molten state along the scribe groove, thereby causing the film material to flow into the scribe groove to form a short circuit. Moreover, the mechanical cutting process is additionally performed after the film is formed, which also causes trouble.
而薄膜太陽能電池除了上述之非晶矽薄膜電池之外，還有其他類型，例如硫化鎘/鍗化鎘(CdS/CdTe)薄膜 電池、銅銦硒(CIS)基薄膜電池等等。但無論是哪一種類型的薄膜電池，在製造上都會因為使用雷射切割或機械切割形成溝槽，進而存有上述容易造成電池膜層損傷以及製作麻煩之缺失，所以已知電池之製法有待改良。Thin film solar cells include other types of amorphous germanium thin film batteries, such as cadmium sulfide/cadmium telluride (CdS/CdTe) films. Battery, copper indium selenide (CIS) based thin film battery, and the like. However, no matter which type of thin film battery is used, it is formed by using laser cutting or mechanical cutting to form a groove, and thus there is a lack of the above-mentioned battery layer damage and troubles in production. Therefore, it is known that the manufacturing method of the battery needs to be improved. .
因此，本發明之目的，即在提供一種可避免膜層損傷、製作出的電池品質佳、且方便進行的太陽能電池的製造方法。Accordingly, it is an object of the present invention to provide a method for producing a solar cell which is capable of avoiding damage to a film layer and having a good quality battery produced and which is convenient to carry out.
於是，本發明太陽能電池的製造方法，包含：將一第一遮罩設置於一基板上，該第一遮罩包括數個間隔的第一遮蔽區，以及數個分別位於該等第一遮蔽區之間的第一鏤空區。利用真空鍍膜方式並配合該第一遮罩，於該基板上形成一第一電極，該第一電極包括數個間隔且分別通過該第一遮罩的該等第一鏤空區而披覆於該基板表面的第一導電區，以及數個分別位於該等第一導電區之間的第一分隔溝。將一遮罩設置於該第一電極上，利用真空鍍膜方式並配合該遮罩，於該第一電極上形成一光電轉換層，該光電轉換層包括數個間隔的光電轉換單元，以及數個分別位於該等光電轉換單元之間的間隔溝，該等間隔溝的位置與該等第一分隔溝的位置錯開。Therefore, the method for manufacturing a solar cell of the present invention comprises: disposing a first mask on a substrate, the first mask comprising a plurality of spaced first shielding regions, and a plurality of first shielding regions respectively located in the first shielding regions The first open space between. Forming a first electrode on the substrate by using a vacuum coating method and the first mask, the first electrode includes a plurality of intervals and respectively passing through the first hollow regions of the first mask a first conductive region on the surface of the substrate, and a plurality of first trenches respectively located between the first conductive regions. A mask is disposed on the first electrode, and a photoelectric conversion layer is formed on the first electrode by using a vacuum coating method and the mask, the photoelectric conversion layer includes a plurality of spaced photoelectric conversion units, and a plurality of The spacers are respectively located between the photoelectric conversion units, and the positions of the spacers are shifted from the positions of the first partitions.
將一第二遮罩設置於該光電轉換層上，該第二遮罩包括數個間隔的第二遮蔽區，以及數個分別位於該等第二遮蔽區之間的第二鏤空區。利用真空鍍膜方式並配合該第二遮罩，於該光電轉換層上形成一第二電極，該第二 電極包括數個間隔且分別通過該第二遮罩的該等第二鏤空區而披覆於該等光電轉換單元表面的第二導電區、數個分別位於該等第二導電區之間的第二分隔溝，以及數個分別自該等第二導電區通過該等光電轉換單元而連接該第一電極的連接導線。A second mask is disposed on the photoelectric conversion layer, the second mask includes a plurality of spaced second shielding regions, and a plurality of second hollow regions respectively located between the second shielding regions. Forming a second electrode on the photoelectric conversion layer by using a vacuum coating method and the second mask, the second The electrode includes a plurality of second conductive regions spaced apart from the surface of the photoelectric conversion unit by the second hollow regions of the second mask, and a plurality of second conductive regions respectively located between the second conductive regions And a plurality of connecting trenches, wherein the connecting wires are connected to the first electrodes from the second conductive regions through the photoelectric conversion units.
本發明之功效：藉由該第一遮罩、該遮罩與該第二遮罩之使用，沈積該第一電極、該光電轉換層及該第二電極時，即可一併形成該等膜層上所須的溝槽，以完成各光電轉換單元之間的斷路線路與導線連接。由於本發明不使用雷射與機械切割，因此可以避免膜層受到雷射能量或機械加工而損傷，使製作出的電池品質良好，而且該等步驟可相當方便地進行。The effect of the present invention: when the first electrode, the photoelectric conversion layer and the second electrode are deposited by using the first mask, the mask and the second mask, the film can be formed together The required grooves on the layer to complete the disconnection line and wire connection between the photoelectric conversion units. Since the present invention does not use laser and mechanical cutting, it is possible to prevent the film layer from being damaged by laser energy or machining, so that the produced battery is of good quality, and the steps can be carried out quite conveniently.
1‧‧‧基板1‧‧‧Substrate
11‧‧‧第一面11‧‧‧ first side
12‧‧‧第二面12‧‧‧ second side
2‧‧‧第一電極2‧‧‧First electrode
21‧‧‧第一導電區21‧‧‧First conductive area
22‧‧‧第一分隔溝22‧‧‧First dividing trench
3‧‧‧光電轉換層3‧‧‧Photoelectric conversion layer
31‧‧‧p型半導體層31‧‧‧p-type semiconductor layer
32‧‧‧n型半導體層32‧‧‧n type semiconductor layer
33‧‧‧本質層33‧‧‧essence layer
34‧‧‧光電轉換單元34‧‧‧ photoelectric conversion unit
341‧‧‧光電轉換區341‧‧‧Photoelectric conversion zone
342‧‧‧導線溝342‧‧‧wire trench
35‧‧‧間隔溝35‧‧‧ gap
4‧‧‧第二電極4‧‧‧second electrode
41‧‧‧第二導電區41‧‧‧Second conductive area
42‧‧‧第二分隔溝42‧‧‧Second separation trench
43‧‧‧連接導線43‧‧‧Connecting wires
51~55‧‧‧步驟51~55‧‧‧Steps
6‧‧‧第一遮罩6‧‧‧First mask
61‧‧‧第一遮蔽區61‧‧‧First shelter area
62‧‧‧第一鏤空區62‧‧‧First open space
7‧‧‧遮罩7‧‧‧ mask
71‧‧‧主遮蔽區71‧‧‧Main shelter area
72‧‧‧成膜單元72‧‧‧ film forming unit
721‧‧‧鏤空區721‧‧‧镂空区
722‧‧‧導線遮蔽區722‧‧‧wire shielding area
8‧‧‧第二遮罩8‧‧‧second mask
81‧‧‧第二遮蔽區81‧‧‧Second shelter
82‧‧‧第二鏤空區82‧‧‧second hollow area
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中：圖1是一太陽能電池的局部立體剖視圖，該太陽能電池是以本發明太陽能電池的製造方法的一較佳實施例所製造出；圖2是該太陽能電池的局部剖視圖；圖3是本發明該製造方法的較佳實施例之各步驟的流程方塊圖；及圖4是本發明該製造方法的較佳實施例之各步驟進行時的流程示意圖。Other features and effects of the present invention will be apparent from the embodiments of the present invention, wherein: FIG. 1 is a partial perspective cross-sectional view of a solar cell, which is a comparison of the method for fabricating the solar cell of the present invention. 2 is a partial cross-sectional view of the solar cell; FIG. 3 is a block diagram of the steps of the preferred embodiment of the manufacturing method of the present invention; and FIG. 4 is a preferred embodiment of the manufacturing method of the present invention. A schematic diagram of the flow of each step of the embodiment.
參閱圖1與圖2，本發明製造方法之較佳實施例，用於製造一太陽能電池，本實施例之太陽能電池為一非晶矽薄膜太陽能電池，但實施時也可以為其他類型的薄膜電池。該太陽能電池包含：一基板1，以及依序披覆在該基板1上的一第一電極2、一光電轉換層3與一第二電極4。Referring to FIG. 1 and FIG. 2, a preferred embodiment of the manufacturing method of the present invention is used to manufacture a solar cell. The solar cell of the embodiment is an amorphous germanium thin film solar cell, but may be other types of thin film cells when implemented. . The solar cell comprises: a substrate 1 and a first electrode 2, a photoelectric conversion layer 3 and a second electrode 4 sequentially coated on the substrate 1.
該基板1為可透光之基板1，例如玻璃基板，該基板1包括相反的一第一面11與一第二面12，該第一面11為入光面，該第二面12可供該第一電極2、該光電轉換層3與該第二電極4等膜層披覆。The substrate 1 is a light transmissive substrate 1 , such as a glass substrate. The substrate 1 includes an opposite first surface 11 and a second surface 12 . The first surface 11 is a light incident surface, and the second surface 12 is available. The first electrode 2, the photoelectric conversion layer 3 and the second electrode 4 are coated.
該第一電極2為透明導電膜，其材料例如氧化銦錫(ITO)、摻鋁的氧化鋅(ZnO：Al)、摻氟的二氧化錫(SnO2 ：F)等可透光且可導電之材料。該第一電極2包括數個間隔的第一導電區21，以及數個分別位於該等第一導電區21之間的第一分隔溝22。The first electrode 2 is a transparent conductive film, and materials such as indium tin oxide (ITO), aluminum-doped zinc oxide (ZnO: Al), fluorine-doped tin dioxide (SnO 2 : F), etc. are transparent and electrically conductive. Material. The first electrode 2 includes a plurality of spaced first conductive regions 21 and a plurality of first trenches 22 respectively located between the first conductive regions 21.
該光電轉換層3位於該第一電極2上，以上下方向來看，該光電轉換層3包括上下間隔的一p型半導體層31與一n型半導體層32，以及一位於該p型半導體層31與該n型半導體層32之間的本質層(Intrinsic Layer，又稱i層)33。在本實施例中，該p型半導體層31相對於該n型半導體層32靠近該基板1，該p型半導體層31位於該第一電極2之遠離該基板1的表面上，並且有局部部位填入該等第一分隔溝22內。該p型半導體層31、該n型半導體層32及該本質層33皆為非晶矽薄膜，其中該本質層 33為未摻雜之非晶矽薄膜。The photoelectric conversion layer 3 is located on the first electrode 2, and the photoelectric conversion layer 3 includes a p-type semiconductor layer 31 and an n-type semiconductor layer 32 spaced apart from each other, and a p-type semiconductor layer. An intrinsic layer (also referred to as an i layer) 33 between the 31 and the n-type semiconductor layer 32. In this embodiment, the p-type semiconductor layer 31 is adjacent to the substrate 1 with respect to the n-type semiconductor layer 32. The p-type semiconductor layer 31 is located on a surface of the first electrode 2 away from the substrate 1 and has a local portion. The first dividing grooves 22 are filled in. The p-type semiconductor layer 31, the n-type semiconductor layer 32 and the intrinsic layer 33 are all amorphous germanium films, wherein the intrinsic layer 33 is an undoped amorphous germanium film.
該光電轉換層3以水平方向來看，則包括數個間隔的光電轉換單元34，以及數個分別位於該等光電轉換單元34之間的間隔溝35，該等間隔溝35的位置與該等第一分隔溝22的位置錯開。每一光電轉換單元34具有二彼此間隔地披覆在該第一電極2上的光電轉換區341，以及一位於該等光電轉換區341之間的導線溝342。每一光電轉換單元34的其中一光電轉換區341的寬度較大且跨設在兩個第一導電區21上，且局部伸入該兩個第一導電區21之間的該第一分隔溝22，而另一光電轉換區341則僅位於一個第一導電區21上。當然，每一光電轉換區341都包含有該p型半導體層31、該n型半導體層32與該本質層33。The photoelectric conversion layer 3, as viewed in the horizontal direction, includes a plurality of spaced photoelectric conversion units 34, and a plurality of spacers 35 respectively located between the photoelectric conversion units 34, the positions of the spacers 35 and the like. The positions of the first dividing grooves 22 are staggered. Each of the photoelectric conversion units 34 has two photoelectric conversion regions 341 which are spaced apart from each other on the first electrode 2, and a wire groove 342 between the photoelectric conversion regions 341. One of the photoelectric conversion regions 341 of each of the photoelectric conversion units 34 has a larger width and spans over the two first conductive regions 21, and partially extends into the first separation trench between the two first conductive regions 21. 22, and the other photoelectric conversion region 341 is located only on one first conductive region 21. Of course, each of the photoelectric conversion regions 341 includes the p-type semiconductor layer 31, the n-type semiconductor layer 32, and the intrinsic layer 33.
本實施例的該等光電轉換單元34皆可吸收光能並將光能轉換為電能。每一光電轉換單元34實際上相當於一個電池單元，並且藉由該等間隔溝35將該等光電轉換單元34隔開，避免短路。The photoelectric conversion units 34 of the embodiment can absorb light energy and convert the light energy into electrical energy. Each of the photoelectric conversion units 34 is substantially equivalent to one battery unit, and the photoelectric conversion units 34 are separated by the spacers 35 to avoid short circuits.
該第二電極4位於該光電轉換層3上，該第二電極4實際上可由一透明導電膜及一金屬膜所堆疊構成，該透明導電膜的材料可以為ITO、ZnO：Al等等，該金屬膜之材料例如銀或鋁等金屬，但由於該第二電極4的膜層結構及材料非本發明改良重點，所以不再詳細說明。該第二電極4包括數個間隔且分別披覆於該等光電轉換單元34表面的第二導電區41、數個分別位於該等第二導電區41之間的第二分隔溝42，以及數個分別自該等第二導電區41通過 該等光電轉換單元34的導線溝342而連接該第一電極2的連接導線43。該等第二分隔溝42的位置分別與該光電轉換層3的該等間隔溝35的位置對應。The second electrode 4 is disposed on the photoelectric conversion layer 3. The second electrode 4 may be formed by stacking a transparent conductive film and a metal film. The transparent conductive film may be made of ITO, ZnO: Al or the like. The material of the metal film is a metal such as silver or aluminum. However, since the film structure and material of the second electrode 4 are not the focus of the present invention, they will not be described in detail. The second electrode 4 includes a plurality of second conductive regions 41 spaced apart from each other on the surface of the photoelectric conversion unit 34, a plurality of second separation trenches 42 respectively located between the second conductive regions 41, and a plurality of Passing through the second conductive regions 41 respectively The wire grooves 342 of the photoelectric conversion units 34 are connected to the connection wires 43 of the first electrode 2. The positions of the second separation grooves 42 correspond to the positions of the spacer grooves 35 of the photoelectric conversion layer 3, respectively.
藉由該第一電極2與該第二電極4的配合設計，使該等光電轉換單元34之間可以形成p、n極相連接，由於每一光電轉換單元34實際上等同於一電池單元，進而使每一電池單元的正極與相鄰的另一電池單元的負極連接，形成數個電池單元串聯之結構，該太陽能電池整體的電流方向如圖2箭頭所示。By the cooperation design of the first electrode 2 and the second electrode 4, the p and n poles can be connected between the photoelectric conversion units 34. Since each photoelectric conversion unit 34 is substantially equivalent to a battery unit, Further, the positive electrode of each battery cell is connected to the negative electrode of another adjacent battery cell to form a structure in which a plurality of battery cells are connected in series, and the current direction of the entire solar cell is as shown by an arrow in FIG.
補充說明的是，該等光電轉換單元34與該第一電極2、第二電極3的結構、層體數量與配置方式，不限於本實施例之舉例，只要各膜層的設計能使該等光電轉換單元34具備光電轉換功能，以及使各個光電轉換單元34之間能形成串聯即可。It is to be noted that the structure of the photoelectric conversion unit 34 and the first electrode 2 and the second electrode 3, and the number and arrangement of the layers are not limited to the examples of the embodiment, as long as the design of each film layer enables the same. The photoelectric conversion unit 34 has a photoelectric conversion function and can form a series connection between the respective photoelectric conversion units 34.
參閱圖2~4，該太陽能電池的製造方法包含：Referring to Figures 2 to 4, the solar cell manufacturing method comprises:
步驟51：將一第一遮罩6設置於該基板1的第二面12上。該第一遮罩6具有預定的鏤空圖案，並包括數個間隔的第一遮蔽區61，以及數個分別位於該等第一遮蔽區61之間的第一鏤空區62。Step 51: A first mask 6 is disposed on the second surface 12 of the substrate 1. The first mask 6 has a predetermined hollow pattern and includes a plurality of spaced first masking regions 61 and a plurality of first hollow regions 62 respectively located between the first masking regions 61.
步驟52：利用真空鍍膜方式並配合該第一遮罩6，於該基板1上形成該第一電極2，接著再移除該第一遮罩6。本發明各步驟所述的真空鍍膜方式可包含物理氣相沈積(PVD)與化學氣相沈積(CVD)等方式。當進行該第一電極2之薄膜沈積時，由於該第一遮罩6之該等第一遮蔽區61 將該基板1之局部部位遮擋住，因此該第一電極2材料僅能通過該等第一鏤空區62而披覆於該基板1表面，因此，製作出的該第一電極2的該等第一導電區21是分別通過該等第一鏤空區62而披覆於該基板1表面，而該等第一導電區21之間則沒有材料披覆，進而形成該等第一分隔溝22。Step 52: forming the first electrode 2 on the substrate 1 by vacuum coating and matching the first mask 6, and then removing the first mask 6. The vacuum coating method described in each step of the present invention may include physical vapor deposition (PVD) and chemical vapor deposition (CVD). When the film deposition of the first electrode 2 is performed, the first masking regions 61 of the first mask 6 are The partial portion of the substrate 1 is blocked, so that the material of the first electrode 2 can only be applied to the surface of the substrate 1 through the first hollow regions 62. Therefore, the first electrode 2 is fabricated. A conductive region 21 is respectively coated on the surface of the substrate 1 through the first hollow regions 62, and no material is coated between the first conductive regions 21 to form the first partition trenches 22.
步驟53：將一遮罩7設置於該第一電極2上，利用真空鍍膜方式並配合該遮罩7，於該第一電極2上形成該光電轉換層3，接著再移除該遮罩7。其中，該遮罩7具有預定的鏤空圖案，並包括數個間隔的主遮蔽區71，以及數個分別位於該等主遮蔽區71之間的成膜單元72，每一成膜單元72具有兩個間隔的鏤空區721，以及一位於該等鏤空區721之間的導線遮蔽區722。該遮罩7設置於該第一電極2上時，該等主遮蔽區71的位置與該第一電極2的該等第一分隔溝22的位置錯開。該等導線遮蔽區722的位置分別位於該等第一導電區21上。Step 53: A mask 7 is disposed on the first electrode 2, and the photoelectric conversion layer 3 is formed on the first electrode 2 by vacuum coating and the mask 7, and then the mask 7 is removed. . The mask 7 has a predetermined hollow pattern, and includes a plurality of spaced main shielding areas 71, and a plurality of film forming units 72 respectively located between the main shielding areas 71. Each film forming unit 72 has two A spaced apart hollowed out area 721 and a wire shielded area 722 between the hollowed out areas 721. When the mask 7 is disposed on the first electrode 2, the positions of the main shielding regions 71 are shifted from the positions of the first dividing grooves 22 of the first electrode 2. The locations of the wire shielding regions 722 are located on the first conductive regions 21, respectively.
進行該光電轉換層3之真空鍍膜作業時，由於該等主遮蔽區71與該等導線遮蔽區722將該第一電極2之局部部位遮擋住，因此該光電轉換層3材料僅能通過該等鏤空區721而披覆於該第一電極2表面。最後製作出的該光電轉換層3的該等光電轉換單元34的位置分別對應該遮罩7的該等成膜單元72的位置，每一光電轉換單元34的該等光電轉換區341分別通過與其對應的該成膜單元72的該等鏤空區721而披覆在該第一電極2表面，該等光電轉 換區341之間則沒有材料披覆，進而形成該等導線溝342，該等導線溝342分別對應該遮罩7的該等導線遮蔽區722。而相鄰的光電轉換單元34之間則形成該等間隔溝35，該等間隔溝35的位置分別對應該遮罩7的該等主遮蔽區71的位置。When the vacuum coating operation of the photoelectric conversion layer 3 is performed, since the main shielding regions 71 and the wire shielding regions 722 block the partial portions of the first electrodes 2, the material of the photoelectric conversion layer 3 can pass only the materials. The hollowed out region 721 is coated on the surface of the first electrode 2. The positions of the photoelectric conversion units 34 of the photoelectric conversion layer 3 which are finally produced are respectively corresponding to the positions of the film formation units 72 of the mask 7, and the photoelectric conversion regions 341 of each of the photoelectric conversion units 34 respectively pass through The corresponding hollow regions 721 of the film forming unit 72 are coated on the surface of the first electrode 2, and the photoelectric conversion There is no material coating between the change zones 341, and the wire grooves 342 are formed, which respectively correspond to the wire shielding areas 722 of the mask 7. The spacers 35 are formed between the adjacent photoelectric conversion units 34, and the positions of the spacers 35 correspond to the positions of the main masking regions 71 of the mask 7, respectively.
為了方便示意，圖4中僅以單一層體示意該光電轉換層3，但該光電轉換層3實際上包括該p型半導體層31、n型半導體層32與本質層33(圖2)，此三層的摻雜濃度與厚度不同，所以此三層是利用三次不同的製程參數條件分別製作。For convenience of illustration, the photoelectric conversion layer 3 is illustrated in only a single layer in FIG. 4, but the photoelectric conversion layer 3 actually includes the p-type semiconductor layer 31, the n-type semiconductor layer 32 and the intrinsic layer 33 (FIG. 2). The doping concentration and thickness of the three layers are different, so the three layers are separately fabricated using three different process parameters.
步驟54：將一第二遮罩8設置於該光電轉換層3上，該第二遮罩8具有預定的鏤空圖案，並包括數個間隔的第二遮蔽區81，以及數個分別位於該等第二遮蔽區81之間的第二鏤空區82。該等第二遮蔽區81的位置分別對應該光電轉換層3的該等間隔溝35的位置，以將該等間隔溝35遮擋住。Step 54: A second mask 8 is disposed on the photoelectric conversion layer 3, the second mask 8 has a predetermined hollow pattern, and includes a plurality of spaced second masking regions 81, and a plurality of respectively located at the same The second hollow area 82 between the second shielding areas 81. The positions of the second shielding regions 81 correspond to the positions of the spacer grooves 35 of the photoelectric conversion layer 3, respectively, to block the spacer grooves 35.
步驟55：利用真空鍍膜方式並配合該第二遮罩8，於該光電轉換層3上形成該第二電極4，接著再移除該第二遮罩8。由於該第二遮罩8之該等第二遮蔽區81將該光電轉換層3之局部部位遮擋住，使該第二電極4材料僅能通過該等第二鏤空區82，因此，製作出的該第二電極4的該等第二導電區41是分別通過該等第二鏤空區82而披覆於該等光電轉換單元34表面，而該等第二導電區41之間則沒有材料披覆，進而形成該等第二分隔溝42。此外， 第二電極4材料亦會沈積於該等光電轉換單元34的該等導線溝342內，進而形成該等連接導線43，該等連接導線43的底部接觸該第一電極2的該等第一導電區21，以形成電連接。Step 55: forming the second electrode 4 on the photoelectric conversion layer 3 by vacuum coating and matching the second mask 8, and then removing the second mask 8. Since the second shielding regions 81 of the second mask 8 block the partial portions of the photoelectric conversion layer 3, the second electrode 4 material can pass only the second hollow regions 82, thereby being fabricated. The second conductive regions 41 of the second electrode 4 are respectively coated on the surfaces of the photoelectric conversion units 34 through the second hollow regions 82, and there is no material covering between the second conductive regions 41. Further, the second partition grooves 42 are formed. In addition, The second electrode 4 is also deposited in the wire grooves 342 of the photoelectric conversion unit 34 to form the connecting wires 43. The bottoms of the connecting wires 43 contact the first conductive electrodes of the first electrode 2. Zone 21 to form an electrical connection.
需要說明的是，在上述各步驟中，所述遮罩設置在膜層上，可以為直接貼覆膜層的表面，也可以與該膜層間隔，如此皆可使後續的鍍膜材料僅形成於被遮罩遮擋的該膜層上的預定位置。本發明之各膜層的鍍膜作業，可利用同一鍍膜設備而在同一真空腔體內進行，因為該真空腔體內可同時設置數種不同的靶材，以在同一真空腔體內完成該第一電極2、該光電轉換層3及該第二電極4之鍍膜步驟。而每鍍完其中一膜層並且要鍍下一膜層之前，可利用電控制方式將遮罩傳送到預定位置後再進行鍍膜。本發明所述的真空鍍膜方式包含PVD、CVD等方式，舉例來說，本實施例之各膜層可利用電子束蒸鍍方式(Electron-Beam Evaporation，簡稱EBE)進行。但實施時當然也可以採用其他種蒸鍍方式或利用濺鍍方式。It should be noted that, in the above steps, the mask is disposed on the film layer, and may be a surface directly attached to the film layer, or may be spaced apart from the film layer, so that the subsequent coating material can be formed only on the film layer. A predetermined position on the film layer that is obscured by the mask. The coating operation of each film layer of the present invention can be carried out in the same vacuum chamber by using the same coating equipment, because several different targets can be simultaneously disposed in the vacuum chamber to complete the first electrode 2 in the same vacuum chamber. a coating step of the photoelectric conversion layer 3 and the second electrode 4. Before each of the layers is plated and the film is to be plated, the mask can be transferred to a predetermined position by electrical control before coating. The vacuum coating method according to the present invention includes PVD, CVD, or the like. For example, each of the film layers of the present embodiment can be formed by Electron-Beam Evaporation (EBE). However, it is of course also possible to use other types of evaporation methods or to use sputtering methods.
因此，本發明藉由該第一遮罩6、該遮罩7與該第二遮罩8之使用，沈積該第一電極2時即可同時形成該等第一分隔溝22，沈積該光電轉換層3時即可同時形成該等間隔溝35與導線溝342，而沈積該第二電極4時即可同時形成該等第二分隔溝42。藉此於製作各膜層時即一併形成該膜層上所須的溝槽，以完成各光電轉換單元34之間的斷路線路與導線連接。由於本發明不使用以往的雷射與機 械切割方式，因此可以避免任何膜層受到雷射能量或機械加工而損傷，使製作出的電池品質良好，而且本發明利用各遮罩可遮蔽膜層上不需鍍膜的部位，使薄膜材料僅形成於預定位置，可避免膜層之間的短路。而且本發明所有步驟都可在同一真空腔體內連貫進行，過程中不需要破真空，因此可相當方便地進行。Therefore, in the present invention, by using the first mask 6, the mask 7 and the second mask 8, when the first electrode 2 is deposited, the first partition trenches 22 can be simultaneously formed, and the photoelectric conversion is deposited. The spacers 35 and the wire trenches 342 can be formed simultaneously in the layer 3, and the second trenches 42 can be simultaneously formed when the second electrodes 4 are deposited. Thereby, the grooves required on the film layer are formed together when the film layers are formed, so that the breaking circuit and the wire connection between the photoelectric conversion units 34 are completed. Since the present invention does not use the conventional laser and machine The mechanical cutting method can prevent any film layer from being damaged by laser energy or machining, so that the produced battery is of good quality, and the mask of the present invention can mask the portion of the film layer that does not need to be coated, so that the film material is only Formed at a predetermined position, short circuits between the layers can be avoided. Moreover, all the steps of the present invention can be carried out continuously in the same vacuum chamber, and no vacuum is required in the process, so that it can be carried out quite conveniently.
惟以上所述者，僅為本發明之較佳實施例而已，當不能以此限定本發明實施之範圍，即大凡依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto, that is, the simple equivalent changes and modifications made by the patent application scope and patent specification content of the present invention, All remain within the scope of the invention patent.
1‧‧‧基板1‧‧‧Substrate
12‧‧‧第二面12‧‧‧ second side
2‧‧‧第一電極2‧‧‧First electrode
21‧‧‧第一導電區21‧‧‧First conductive area
22‧‧‧第一分隔溝22‧‧‧First dividing trench
3‧‧‧光電轉換層3‧‧‧Photoelectric conversion layer
34‧‧‧光電轉換單元34‧‧‧ photoelectric conversion unit
341‧‧‧光電轉換區341‧‧‧Photoelectric conversion zone
342‧‧‧導線溝342‧‧‧wire trench
35‧‧‧間隔溝35‧‧‧ gap
4‧‧‧第二電極4‧‧‧second electrode
41‧‧‧第二導電區41‧‧‧Second conductive area
42‧‧‧第二分隔溝42‧‧‧Second separation trench
43‧‧‧連接導線43‧‧‧Connecting wires
6‧‧‧第一遮罩6‧‧‧First mask
61‧‧‧第一遮蔽區61‧‧‧First shelter area
62‧‧‧第一鏤空區62‧‧‧First open space
7‧‧‧遮罩7‧‧‧ mask
71‧‧‧主遮蔽區71‧‧‧Main shelter area
72‧‧‧成膜單元72‧‧‧ film forming unit
721‧‧‧鏤空區721‧‧‧镂空区
722‧‧‧導線遮蔽區722‧‧‧wire shielding area
8‧‧‧第二遮罩8‧‧‧second mask
81‧‧‧第二遮蔽區81‧‧‧Second shelter
82‧‧‧第二鏤空區82‧‧‧second hollow area
Claims (4)
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| TW102134124A TWI502758B (en) | 2013-09-23 | 2013-09-23 | Method for manufacturing solar cells |
| CN201410354854.XA CN104518053A (en) | 2013-09-23 | 2014-07-24 | Method for manufacturing solar cell |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080156372A1 (en) * | 2006-12-29 | 2008-07-03 | Industrial Technology Research Institute | Thin film solar cell module of see-through type and method of fabricating the same |
| CN101877367A (en) * | 2009-04-29 | 2010-11-03 | 太阳海科技股份有限公司 | Solar battery element structure and method of manufacturing same |
| TW201314925A (en) * | 2011-09-26 | 2013-04-01 | Ind Tech Res Inst | Manufacturing process of thin film solar energy batteries |
| TW201316537A (en) * | 2011-10-04 | 2013-04-16 | Axuntek Solar Energy | Method for manufacturing see-through solar battery module |
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| EP2450964A4 (en) * | 2009-06-30 | 2013-11-06 | Lg Innotek Co Ltd | Photovoltaic power-generating apparatus and method for manufacturing same |
| KR101028310B1 (en) * | 2009-06-30 | 2011-04-11 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
| KR20120012325A (en) * | 2010-07-30 | 2012-02-09 | 엘지이노텍 주식회사 | Solar cell apparatus and method of fabricating the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080156372A1 (en) * | 2006-12-29 | 2008-07-03 | Industrial Technology Research Institute | Thin film solar cell module of see-through type and method of fabricating the same |
| CN101877367A (en) * | 2009-04-29 | 2010-11-03 | 太阳海科技股份有限公司 | Solar battery element structure and method of manufacturing same |
| TW201314925A (en) * | 2011-09-26 | 2013-04-01 | Ind Tech Res Inst | Manufacturing process of thin film solar energy batteries |
| TW201316537A (en) * | 2011-10-04 | 2013-04-16 | Axuntek Solar Energy | Method for manufacturing see-through solar battery module |
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| CN104518053A (en) | 2015-04-15 |
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