TWI500811B - 基板基座及含它之沈積設備 - Google Patents

基板基座及含它之沈積設備 Download PDF

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TWI500811B
TWI500811B TW100123909A TW100123909A TWI500811B TW I500811 B TWI500811 B TW I500811B TW 100123909 A TW100123909 A TW 100123909A TW 100123909 A TW100123909 A TW 100123909A TW I500811 B TWI500811 B TW I500811B
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substrate
base
deposition apparatus
platform
lower base
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TW201204867A (en
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Yong Sung Park
Sung Kwang Lee
Dong Yeul Kim
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Kookje Electric Korea Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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Description

基板基座及含它之沈積設備
本發明通常關於用於製造半導體裝置之半導體製造設備，且更具體而言，關於包含基板基座之沈積設備。
在用以製造半導體裝置之步驟期間，已提案原子層積層法(Atomic layer deposition,之後稱為“ALD”)用以改良沈積的薄片之正形性(Conformality)。該ALD係被使用來形成沈積的薄膜之步驟，經由重覆具有原子範圍厚度之單元反應則該薄膜具有所需的厚度。該ALD顯示比化學沈積法(CVD)或噴濺法更低的沈積率，並需要許多時間用來成長至所需厚度之薄膜，其造成生產力降低。
本發明的具體實施例提供基板基座及包含其之沈積設備，其可改善熱效率。
本發明的具體實施例也提供基板基座及包含其之沈積設備，其可使用熱能以加熱基板。
本發明的具體實施例也提供基板基座及包含其之沈積設備，其可增加溫度均一性。
在本發明的態樣之一中，該沈積設備可包含處理室、安裝在處理室之基板基座且複數個基板共面地安裝於其上，裝配噴射元件以噴射氣體至基板之全部處理表面，該基板位於相當於配置在基座的基板之位置。該基板基座可包含上基座，在此處形成平台，將基板配置在具有頂部表面之平台，下基座連接至上基座的底部表面且安裝加熱元件，其提供用以加熱基板之熱源至分別相當於平台之區域，而且將屏蔽元件安裝在下基座之底部表面並裝配以防止熱能輻射至下基座之底部表面。
在本發明的一些具體實施例中，該基座基板可具有用以熱傳送下基座與該屏蔽元件之間的輻射空間。
在本發明的一些具體實施例中，該屏蔽元件可包含具有頂部表面的平板形之屏蔽板，該頂部表面與該輻射空間有聯繫並塗布有反射塗膜，且可相應於平台來裝設該屏蔽板。
在本發明的一些具體實施例中，該屏蔽板可具有彎曲或傾斜的頂部表面。
在本發明的一些具體實施例中，該屏蔽板可具有形成凹凸不平的圖案之頂部表面以集中熱能之輻射角於特定區域。
在本發明的一些具體實施例中，該基板基座可具有形成於下基座與上基座之間的孔，該下基座裝設在該平台下以輻射方法來傳送加熱源件之熱能。
在本發明的一些具體實施例中，該孔可填充混合奈米碳管之碳化矽系材料，該奈米碳管具有高熱量及低導熱性。
在本發明的其它態樣中，該基座基板之上基座包含複數個平台，在該處將基板配置於同心圓上；連接至上基座之底部表面的下基座；安裝在下基座與上基座之間的加熱元件以提供用以加熱基板之熱源；及安裝在下基座以分別相對應於平台之屏蔽元件，該平台具有形成反射塗膜之頂部表面，且將輻射至該下基座之熱能再次提供至下基座之側面以改善熱效率。
在本發明的一些具體實施例中，該基板基座可具有形成於下基座與裝設在平台下地上基座之間的第一孔，以均一地傳送加熱元件之熱能，及在下基座與屏蔽元件之間形成第二孔以傳送輻射自遮蔽元件之熱能至下基座。
在本發明的一些具體實施例中，該屏蔽板可具有於其上形成有反射塗膜且與第二孔有聯繫的頂部表面，且在遮蔽版之頂部表面形成凹凸不平的圖案以集中熱能的輻射角度於特定區域。
由於附圖與之後的詳細描述，使本發明變得更顯而易見。在此所描述的具體實施例以例子做為條件，但不用以限制本發明，其中如參照相同或相似元件之參考符號。在說明本發明之態樣上，該圖示不需要比例強調取代置換。
參考之後的附圖更詳細說明本發明，顯示本發明較佳實施例。然而，本發明可在許多不同形式中實施，而且不應被解釋為限制於在此所闡述的具體實施例。相當於對熟知該技術領域者，提供這些實施例使得該揭示徹底地完成，且完全達到本發明的範圍。如符號完全參照相同元件。
圖1說明根據本發明ALD的設備10。圖2A及2B分別為顯示在圖1之噴射元件之鳥瞰圖及橫剖面圖。圖3為顯示在圖1之基板基座之鳥瞰圖。
參照圖1至3，根據本發明ALD設備包含處理室100、具有做為支撐元件功能之基板基座200、噴射元件300及供應元件400。
該處理室100在其一側具有入口112。該入口112為在處理期間通過基板W進入或離開之入口。此外，在原子層沈積法(ALD)中該處理室100包含裝設於上邊緣之排放導管120及排放管140以排放反應氣體及沖洗氣體，將其提供至處理室100且產生反應分散物。該排放導管120包括裝設在噴射元件300外側之環狀形式。雖然未顯示，熟知該技術領域者將顯而易見該排放管114連接至真空泵，且將壓力控制閥與流速控制閥安裝於該排放管114。
如圖1至2B所示，該噴射元件300噴射氣體至配置在基板基座200之分別的四基板。該噴射元件300接收第一及第二反應氣體及從該供應元件400之排放氣體。該噴射元件300包含噴射頭310及傳動軸330。該噴射頭310包含裝配用以噴射氣體之第一至第四檔板320a至320d，該噴射氣體提供自該供應元件400，而在分別相對於基板之位置完全處理基板表面。設置該傳動軸330以穿透該處理室100之上中心且支撐該噴射頭310。第一至第四檔板320a至320d之每一個具有用以包含氣體之獨立空間。該噴射頭310具有盤形狀，且第一至第四檔板320a至320d具有風扇形狀固定地分配在基於該噴射頭310之該中心的直角。在該噴射頭310的底部表面上形成有氣體排放洞312。供應自供應元件400之氣體分別被供應至第一至第四檔板320a至320d之獨立空間。在供應至基板之前，噴射該氣體通過該氣體排放洞312。第一反應氣體被供應至第一檔板320a及第二反應氣體被供應至第三檔板320c。排放氣體被供應至第二至第四檔板320b及320d，該第四檔板裝設在第一及第三檔板320a及320c之間以防止第一及第二反應氣體與排放非反應氣體之混合物。
例如，雖然如上描述，該噴射頭310包含具有風扇形式固定地分配在直角之第一至第四檔板320a至320d，惟本發明不限於該敘述。根據方法目的或特性，檔板可更適合地分配在45或180度而且可被裝配以具有各種大小。
參照第1圖，該供應元件400包含第一氣體供應元件410a、第二氣體供應元件410b及排放氣體供應元件420。該第一氣體供應元件410a供應第一反應氣體至第一檔板320a以形成預定的薄膜於基板上W上，及該第二氣體供應元件410b供應第二反應氣體至第三檔板320c。該排放氣體供應元件420供應排放氣體至第二及第四檔板320b及320d。在排放氣體供應元件420以固定流率連續供應排放氣體時，該第一及第二供應元件410a及410b排放反應氣體，該反應氣體使用高壓進料槽(未顯示)於一小段時間(閃光供應方法)在高壓下裝料，及擴散在基板上的該排放氣體。
在該實施例中，雖然使用兩種氣體供應元件以供應兩種不同反應氣體，可了解根據處理特性，可提供複數個氣體供應元件以供應至少三種不同反應氣體。
如圖1及3所示，將該基板基座200安裝在該處理室100之內部空間。該基板基座200為批次型基座，第四基板負載於其上。該基板基座200藉由驅動單元290來旋轉。尤其，旋轉該基板基座200之該驅動元單元200為步進馬達，其中安裝編碼器以控制旋轉數目及旋轉速度。用於噴射元件300之單循環過程之時間(第一反應氣體排放氣體、第二反應氣體排放氣體)由編碼器來控制。
該基板基座200可被應用於不僅四個平台也可以三個平台或至少四個平台。
雖然未顯示，在基板基座提供複數個起模針(lift pin)以提升或降低在各平台之基板W。除了該基座基板200之平台或內裝基板W於基座基板200之平台上之外，該起模針將基板W提升或降低以空出基板W。
該基座基板200包含上基座210、下基座220、加熱元件230、屏蔽元件240及支撐在下基座220之支撐管柱280。
該上基座210具有形成第4平台212a至212d之盤形狀，該上基座具有基板配置之頂部表面。該上基座210耦合至下基座210而彼此重疊。提供於上基座210之該第1至4之平台212a至212d可具有圓形，該平台與基板的形式相似。在直角的固定間隔，將該第一至四的平台212a至212d排列於繞著基板基座200中心之同心圓上。
該下基座220具有由熱電組線所構成的加熱元件230，該熱電組線用以加熱分別內裝於212a至212d的平台之基板W。將該加熱元件230裝設於形成於下基座220之頂部表面的嵌入的凹槽228，同時藉由固定器233來支撐。雖然固定器233可被安裝於全部的加熱元件230，如果需要，其可被安裝於各固定的長度或各固定的角度(例如直角、45度等)以固定加熱元件230。該加熱元件230加熱上基座210及下基座220而允許基板W之溫度上升至一預定溫度(處理溫度)。該加熱元件230、熱電組線排列在配置基板的平台區域(熱電組線分散排列)，因此，配置基板的平台區域之溫度維持在高範圍，同時其它區域之溫度維持在低範圍。結果，僅將薄膜裝設於基板。
圖4為基板基座200的重要部位之橫剖面圖。
如圖4所顯示，將數毫米的第一孔250提供至上基座210與下基座220之間，及將數毫米的第二孔260提供至下基座220與屏蔽元件240之間。
該第一孔250可裝設在下基座220與上基座210之間且裝設在平台下，而且加熱元件230之熱能可藉由第一孔，不是以熱傳導方法而是以輻射傳送方法來傳送至上基座210，以改善上基座210之熱均一性。至於另一例子，由碳化矽(SiC)系材料所構成的熱傳送片(未顯示)，具有高熱容量及低導熱性之該材料可安裝第一孔250以增加熱傳送速度。該熱傳送片可具有單層或多層結構，混合碳奈米管之碳化矽在一方向傳送熱。碳奈米管的混合率可在熱傳送片之相對應的區域(中心部位及邊緣部位)被調整以調整在該熱傳薄片之相對應的區域的熱傳送率。
參考圖4，該屏蔽元件240防止安裝於下基座220之頂部表面之加熱元件230所產生的一部分的熱能輻射至下基座220之底部表面，以阻止熱能損失。將該屏蔽元件240安裝在下基座220之底部表面。在屏蔽元件240與下基座220之間提供第二孔260，做為用以熱傳送的輻射空間。
與平台相同，將屏蔽元件240裝設於下基座220之底部表面，相當於在直角的固定角度，將於平台排列在環繞該基板基座200的中心之同心圓。該屏蔽元件240包含具有塗布反射塗層之圓形板形狀的屏蔽板241，使得將輻射至該下基座220的底部表面之熱能再提供至下基座220之側面以改善熱效率。該屏蔽板241係由低熱容量的材料製成(例如石英等)。將由例如鉑或鉬之熱及化學安定材料而製造的薄膜(反射塗膜)244塗布在該屏蔽板241之表面以改善反射效率。
該屏蔽板241不僅可具有顯示於圖4之平板也具有各種形狀。
圖5A至5D說明屏蔽元件之各種修正的具體實施例。
如圖5A及5B所示，可凹陷地或凸起地形成屏蔽元件240a及屏蔽元件240b之屏蔽板241。即，在這種情況，從朝向其中心部位之其邊緣部位凹陷地形成屏蔽板241，輻射能之反射角可集中在該屏蔽板241之中心。在相反情況，該再反射角度可被集中在該屏蔽板241之邊緣。因此，根據該屏蔽板241之形狀，輻射能之反射角可被集中在特定區域以增加特定區域之溫度。
如圖5C所示，在屏蔽元件240c之頂部表面上可形成屏蔽板可凹凸不平的圖案。這些圖案可改善輻射自下基座220之底部表面的輻射能之再反射效率及控制在反射角度。因此，該屏蔽元件240c可允許特定區域之溫度以增加使用的圖案，而且具有各種形狀，例如點形狀、多邊形的形狀、V形狀及圓錐的形狀。
顯示於圖5D之屏蔽元件240d其特徵為形成於屏蔽元件241的頂部之圖案形狀不同於中心部與邊緣部之間。因此，輻射能的反射角度可集中在特定的區域。
圖6係根據本發明的其它具體實施例說明屏蔽元件。在圖6中，可安裝屏蔽元件240e但不是在下基座220之底部表面，然而在其頂部表面再反射輻射自該上基板210之底部表面的輻射能與加熱元件230之較低的輻射能。在此種情況下，較佳為將該加熱元件230裝設的比下基座220之頂部表面高，以改善屏蔽元240e的反射率。當安裝該加熱元件230以曝露於下基座220之頂部表面時，輻射自朝向該下基座220之頂部表面的加熱元件230之輻射能可在上基座210之方向被反射以改善熱效率。
圖7說明顯示於圖6的屏蔽元件之修正版本。參考圖7，加熱元件230沒有安裝在下基座220，但直接地安裝在屏蔽元件240f之頂部表面，該加熱元件被裝設在下基座220之頂部表面。藉由固定器232將該加熱元件230固定在屏蔽元件240f之頂部表面，在固定間隔或固定角度可安裝該固定器232。
圖8及圖9分別地說明屏蔽元件之其它具體實施例。
如圖8及9所示，屏蔽元件240g及240h各包含塗布反射塗層244之圓板型屏蔽板241及容器249密封該屏蔽板241，且具有做為用以熱傳送之輻射空間之第二孔260形成於頂部表面。可由透明石英材質製作該容器249並阻斷處理體(反應氣體)之流入以避免該屏蔽板241的污染物，又，反射塗層244為可逆反應且由於污染物而降低反射率。
具有上述結構之該屏蔽元件240h可安裝在該下基座220之頂部表面上。在此種情況下，該加熱件230被安裝在容器249之頂部表面。
如圖9所示，上述結構的屏蔽元件240h可安裝在下基座220之底部表面上。因為該屏蔽元件240h具有用以熱傳送之輻射空間，其緊緊地安裝在下基座220，在該屏蔽元件240h與該下基座220之間沒有提供特別的空間。
根據上述的本發明，可最小化基座之溫度分布偏差。此外，可提高熱效率。
同時本發明特別地已顯示及描述關於示範的具體實施例，熟知該技術領域者將了解可在形式與細節中做改變，但不偏離本發明的精神與定義於下述申請專利範圍之範圍。
10．．．ALD設備
100．．．處理室
112．．．入口
114．．．排放管
200．．．基板基座
210．．．上基座
212a．．．第4平台
212b．．．第4平台
212c．．．第4平台
212d．．．第4平台
220．．．下基座
228．．．凹槽
230．．．加熱元件
232．．．固定器
240．．．屏蔽元件
240a、b、c、d、e、f、g、h．．．屏蔽元件
241．．．屏蔽板
244．．．反射塗膜
249．．．容器
250．．．第一孔
260．．．第二孔
280．．．支撐管柱
290．．．驅動單元
300．．．噴射元件
310．．．噴射頭
312．．．氣體排放洞
320a．．．第四檔板
320b．．．第四檔板
320c．．．第四檔板
320d．．．第四檔板
330．．．傳動軸
400．．．供應元件
410a．．．第一氣體供應元件
410b．．．第二氣體供應元件
420．．．排放氣體供應元件
W．．．基板
圖1為根據本發明說明ALD設備。
圖2A及2B分別為顯示於圖1的噴射元件之鳥瞰圖及橫剖面圖。
圖3為顯示於圖1的基板基座之鳥瞰圖。
圖4為基板基座之重要部位的橫剖面圖。
圖5A至5D說明屏蔽元件之各種修正的具體實施例。
圖6為根據本發明的其它具體實施例所說明的屏蔽元件。
圖7說明顯示於圖6的屏蔽元件之修正版。
圖8說明屏蔽元件之其它具體實施例。
圖9說明屏蔽元件之其它具體實施例。
10．．．ALD設備
100．．．處理室
112．．．入口
114．．．排放管
200．．．基板基座
210．．．上基座
220．．．下基座
280．．．支撐管柱
290．．．驅動單元
300．．．噴射元件
310．．．噴射頭
330．．．傳動軸
400．．．供應元件
410a．．．第一氣體供應元件
410b．．．第二氣體供應元件
420．．．排放氣體供應元件
W．．．基板

Claims (9)

  1. 一種沈積設備，其係包含：處理室；基板基座，其安裝於該處理室且複數基板同面配置於其上；及噴射元件，其裝配在分別相對於配置於基座的基板之位置以噴射氣體至基板之全部處理表面，其中該基板基座包含：上基座，其形成於具有將基板配置於頂部表面的平台；下基座，其連接至上基座之底部表面並安裝加熱元件於其上，其提供用以加熱基板之熱源至分別對應於該平台之區域；及屏蔽元件，其安裝於下基板之底部表面且被裝配以防止熱能輻射至該下基座之底部表面。
  2. 如申請專利範圍第1項之沈積設備，其中基板基座具有在較低基座與該屏蔽元件之間用以熱傳送之輻射空間。
  3. 如申請專利範圍第2項之沈積設備，其中該屏蔽元件包含具有頂部表面之平板型屏蔽板，其與輻射空間接觸並塗布有反射塗層薄膜，及其中該屏蔽板係對應於該平台而裝設。
  4. 如申請專利範圍第3項之沈積設備，其中該屏蔽板具有彎曲的或傾斜的頂部表面。
  5. 如申請專利範圍第3項之沈積設備，其中該屏蔽板具有凹的或凸的頂部表面。
  6. 如申請專利範圍第3項之沈積設備，其中該屏蔽板具有形成凹凸不平的圖案之頂部表面來集中在特定區域中熱能 之輻射角度。
  7. 如申請專利範圍第2項之沈積設備，其中該基板基座具有被形成於下基座與上基座之間的孔，且在輻射方法中將該基板基座裝設低於該平台來傳送該加熱元件之熱源。
  8. 如申請專利範圍第7項之沈積設備，其中該孔被填充具有高熱容量及低導熱性之碳化矽系的材料。
  9. 一種沈積設備，其係包含：處理室；基板基座，將其安裝於該處理室且包含在該處基板排列於同心圓上之複數個平台；複數個氣體供應元件，係裝配每一氣體供應元件以供應反應氣體；沖洗氣體供應元件，將其裝配以供應沖洗氣體；噴射元件，其包含複數個擋板，用以將得自於氣體供應元件之反應氣體及得自於沖洗氣體供應元件之沖洗氣體，單獨地噴射至在分別對應於配置在該平台之基板之位置的基板之全部處理表面；及驅動單元，將其裝配以旋轉該基板基座或該噴射元件使得該噴射元件之擋板圍繞該配置於平台之基板旋轉，其中該基板基座包含：上基座，將該平台裝設於其上，下基座，其連接至上基座之底部表面並安裝加熱元件於其上，其提供用以加熱基板之熱源；及屏蔽板，其安裝於下基座之底部表面以分別對應於該平台，且將輻射至該下基座之底部表面之熱能，再提供至下基座之側面以改善熱效率。
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Families Citing this family (21)

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Publication number Priority date Publication date Assignee Title
JP5423529B2 (ja) * 2010-03-29 2014-02-19 東京エレクトロン株式会社 成膜装置、成膜方法及び記憶媒体
JP6054733B2 (ja) * 2012-03-02 2016-12-27 スタンレー電気株式会社 気相成長装置
KR102113734B1 (ko) * 2012-12-12 2020-05-21 엘지이노텍 주식회사 화학 기상 증착 장치용 서셉터 및 이를 구비한 화학 기상 증착 장치
KR102164707B1 (ko) * 2013-08-14 2020-10-13 삼성디스플레이 주식회사 원자층 증착 방법 및 원자층 증착 장치
US11549181B2 (en) 2013-11-22 2023-01-10 Applied Materials, Inc. Methods for atomic layer deposition of SiCO(N) using halogenated silylamides
KR102297567B1 (ko) * 2014-09-01 2021-09-02 삼성전자주식회사 가스 주입 장치 및 이를 포함하는 박막 증착 장비
US10954597B2 (en) * 2015-03-17 2021-03-23 Asm Ip Holding B.V. Atomic layer deposition apparatus
US10161041B2 (en) 2015-10-14 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thermal chemical vapor deposition system and operating method thereof
US10428425B2 (en) * 2016-01-26 2019-10-01 Tokyo Electron Limited Film deposition apparatus, method of depositing film, and non-transitory computer-readable recording medium
KR102193326B1 (ko) * 2016-03-25 2020-12-22 가부시키가이샤 코쿠사이 엘렉트릭 기판 지지대, 기판 처리 장치 및 반도체 장치의 제조 방법
KR102411077B1 (ko) * 2016-06-07 2022-06-17 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 균일성을 위한 윤곽 포켓 및 하이브리드 서셉터
TWI671429B (zh) 2016-07-02 2019-09-11 美商應用材料股份有限公司 在空間ald處理腔室中用以增加沉積均勻性的裝置
JP6296189B1 (ja) * 2016-10-31 2018-03-20 日新イオン機器株式会社 加熱装置、半導体製造装置
US11621180B2 (en) 2016-10-31 2023-04-04 Nissin Ion Equipment Co., Ltd. Heating device
CN107507793B (zh) * 2017-08-18 2020-02-04 深圳市华星光电技术有限公司 蚀刻设备
TWI802439B (zh) * 2017-10-27 2023-05-11 美商應用材料股份有限公司 具有空間分離的單個晶圓處理環境
US10755955B2 (en) * 2018-02-12 2020-08-25 Applied Materials, Inc. Substrate transfer mechanism to reduce back-side substrate contact
US11447865B2 (en) 2020-11-17 2022-09-20 Applied Materials, Inc. Deposition of low-κ films
CN113539893A (zh) * 2021-05-11 2021-10-22 北京北方华创微电子装备有限公司 一种用于半导体工艺腔室的加热装置和半导体设备
US20230130756A1 (en) * 2021-10-22 2023-04-27 Applied Materials, Inc. Bottom cover plate to reduce wafer planar nonuniformity
CN116411265A (zh) * 2021-12-31 2023-07-11 中微半导体设备(上海)股份有限公司 一种化学气相沉积装置及其方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091827A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 基板処理装置
TW200946713A (en) * 2008-01-31 2009-11-16 Applied Materials Inc CVD apparatus

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4579080A (en) * 1983-12-09 1986-04-01 Applied Materials, Inc. Induction heated reactor system for chemical vapor deposition
JPH06310438A (ja) * 1993-04-22 1994-11-04 Mitsubishi Electric Corp 化合物半導体気相成長用基板ホルダおよび化合物半導体気相成長装置
JP3165938B2 (ja) 1993-06-24 2001-05-14 東京エレクトロン株式会社 ガス処理装置
JPH08139046A (ja) * 1994-11-09 1996-05-31 Hitachi Ltd 熱処理装置
JPH08302474A (ja) * 1995-04-28 1996-11-19 Anelva Corp Ｃｖｄ装置の加熱装置
JP2975885B2 (ja) * 1996-02-01 1999-11-10 キヤノン販売株式会社 ガス分散器及びプラズマ処理装置
US6035101A (en) 1997-02-12 2000-03-07 Applied Materials, Inc. High temperature multi-layered alloy heater assembly and related methods
JP4059990B2 (ja) * 1998-09-30 2008-03-12 大陽日酸株式会社 気相成長装置
KR100319494B1 (ko) * 1999-07-15 2002-01-09 김용일 원자층 에피택시 공정을 위한 반도체 박막 증착장치
JP4817210B2 (ja) * 2000-01-06 2011-11-16 東京エレクトロン株式会社 成膜装置および成膜方法
US6436796B1 (en) * 2000-01-31 2002-08-20 Mattson Technology, Inc. Systems and methods for epitaxial processing of a semiconductor substrate
EP1568068A1 (en) * 2002-11-22 2005-08-31 Applied Materials, Inc. Backside heating chamber for emissivity independent thermal processes
JP5031013B2 (ja) * 2008-11-19 2012-09-19 東京エレクトロン株式会社 成膜装置、成膜装置のクリーニング方法、プログラム、プログラムを記憶するコンピュータ可読記憶媒体
TWI465599B (zh) * 2008-12-29 2014-12-21 K C Tech Co Ltd 原子層沉積裝置
KR101452834B1 (ko) * 2008-12-29 2014-10-21 주식회사 케이씨텍 원자층 증착장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091827A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd 基板処理装置
TW200946713A (en) * 2008-01-31 2009-11-16 Applied Materials Inc CVD apparatus

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