TWI490051B - Method for cleaning physical vapor deposition chamber part - Google Patents
Method for cleaning physical vapor deposition chamber part Download PDFInfo
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- TWI490051B TWI490051B TW100148087A TW100148087A TWI490051B TW I490051 B TWI490051 B TW I490051B TW 100148087 A TW100148087 A TW 100148087A TW 100148087 A TW100148087 A TW 100148087A TW I490051 B TWI490051 B TW I490051B
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- chamber
- vapor deposition
- physical vapor
- cleaning
- reaction chamber
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- 238000000034 method Methods 0.000 title claims description 47
- 238000005240 physical vapour deposition Methods 0.000 title claims description 36
- 238000004140 cleaning Methods 0.000 title claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 32
- 239000002184 metal Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 26
- 238000000576 coating method Methods 0.000 claims description 26
- 239000000243 solution Substances 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 5
- 238000005488 sandblasting Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000012670 alkaline solution Substances 0.000 claims description 2
- 230000001680 brushing effect Effects 0.000 claims description 2
- 238000011010 flushing procedure Methods 0.000 claims description 2
- 239000002195 soluble material Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000003929 acidic solution Substances 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 28
- 238000007747 plating Methods 0.000 description 18
- 239000002585 base Substances 0.000 description 11
- 230000002378 acidificating effect Effects 0.000 description 4
- 230000008929 regeneration Effects 0.000 description 4
- 238000011069 regeneration method Methods 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 241000282414 Homo sapiens Species 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000010865 sewage Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Description
本發明係關於一種清潔方法，特別是有關一種用於物理氣相沉積(Physical Vapor Deposition,PVD)之反應室腔體之清潔方法。The present invention relates to a cleaning method, and more particularly to a method of cleaning a chamber of a reaction chamber for physical vapor deposition (PVD).
請參閱第1圖，係繪示習知物理氣相沉積之反應室腔體實施物理氣相沉積製程之示意圖。物理氣相沉積製程主要是在一基板100上沉積一薄膜102。首先利用一直流電源104分別電性耦接至一背板106及一遮覆板108，藉由該背板106及該遮覆板108於該反應室腔體內形成電場將離子槍束110擊向靶材112，其中該靶材112係為純金屬之材質所製成。該離子槍束110撞擊該靶材112後，會將該靶材112上的金屬濺射在該基板100上而形成該薄膜102。Please refer to FIG. 1 , which is a schematic diagram showing a physical vapor deposition process of a reaction chamber cavity of a conventional physical vapor deposition process. The physical vapor deposition process primarily deposits a film 102 on a substrate 100. Firstly, the DC power source 104 is electrically coupled to a backing plate 106 and a shielding plate 108. The backing plate 106 and the shielding plate 108 form an electric field in the reaction chamber cavity to strike the ion gun beam 110. The target 112, wherein the target 112 is made of a pure metal material. After the ion gun bundle 110 strikes the target 112, the metal on the target 112 is sputtered on the substrate 100 to form the film 102.
而物理氣相沉積之反應室腔體在使用一段時間後，會在反應室腔體中該遮覆板108及母材114的表面形成金屬鍍膜(未圖示)，因此必須對反應室腔體進行洗淨與再生，防止金屬鍍膜破裂或剝落所產生之微塵粒子散佈至該基板100而影響良率。所謂洗淨係指針對反應室腔體中該遮覆板108及該母材114之金屬鍍膜的材質選用適當之方法與材料予以去除，例如以酸性或鹼性之化學溶液浸泡反應室腔體，將形成於該遮覆板108及該母材114表面之金屬鍍膜溶解分離。所謂再生係指洗淨後再以噴砂及整形等方式恢復該遮覆板108及該母材114之原有外形與表面特性。然而上述洗淨及再生皆會侵蝕與損耗反應室腔體中該遮覆板108及該母材114之本體厚度，造成使用壽命減短。After the reaction chamber cavity of the physical vapor deposition is used for a period of time, a metal plating film (not shown) is formed on the surface of the shielding plate 108 and the base material 114 in the reaction chamber cavity, so the reaction chamber cavity must be Washing and regeneration are performed to prevent fine particles generated by cracking or peeling of the metal plating film from being scattered on the substrate 100 to affect the yield. The so-called cleaning system pointer is used to remove the material of the metal coating film of the shielding plate 108 and the base material 114 in the reaction chamber cavity by using appropriate methods and materials, for example, soaking the reaction chamber cavity with an acidic or alkaline chemical solution. The metal plating film formed on the surface of the mask 108 and the base material 114 is dissolved and separated. The term "regeneration" refers to restoring the original shape and surface characteristics of the cover plate 108 and the base material 114 by sandblasting and shaping after washing. However, both the above cleaning and regeneration will erode and reduce the bulk thickness of the cover plate 108 and the base material 114 in the cavity of the reaction chamber, resulting in a shortened service life.
此外，對於反應室腔體中之螺絲孔(未圖示)，例如鎖固於該母材114之間之螺絲孔，上述以化學溶液浸泡反應室腔體、對該遮覆板108及該母材114噴砂及整形等步驟會使螺絲孔產生擴孔現象，因此在多次進行洗淨及再生後，會造成螺絲孔尺寸與原先尺寸有所差異，導致螺絲孔與螺絲在組合時誤差過大而使得鎖固功能不佳甚至無法繼續使用。In addition, for a screw hole (not shown) in the reaction chamber cavity, for example, a screw hole locked between the base material 114, the chemical chamber is used to soak the reaction chamber cavity, the cover plate 108 and the mother The step of sand blasting and shaping of the material 114 causes the hole of the screw hole to ream. Therefore, after cleaning and regenerating a plurality of times, the size of the screw hole is different from the original size, and the error between the screw hole and the screw is too large. This makes the locking function poor or even impossible to use.
並且，由於在前述洗淨等過程中，必須使用大量的酸性或鹼性之化學溶液，浸泡遮覆板108及母材114，以溶解金屬鍍膜，使其與遮覆板108及母材114分離。由於不可避免地必須使用大量的酸性或鹼性之化學溶液，不僅洗淨成本大幅地提高。使用大量酸性或鹼性之化學溶液，對於自然環境也不可避免地造成一定程度的影響。在當今環境保護意識明確，盡力避免人類科技發展與經濟活動對環境造成危害，而能永續經營且平衡生態是為當今人類的一大課題。Further, since a large amount of an acidic or alkaline chemical solution must be used in the above-described washing or the like, the mask 108 and the base material 114 must be immersed to dissolve the metal plating film to separate it from the mask 108 and the base material 114. . Since it is inevitable that a large amount of acidic or alkaline chemical solution must be used, not only the cleaning cost is greatly increased. The use of a large number of acidic or alkaline chemical solutions inevitably has a certain degree of influence on the natural environment. In today's clear sense of environmental protection, we try our best to avoid the dangers of human science and technology development and economic activities, and to maintain sustainable management and balance the ecology is a major issue for today's human beings.
是以，確有需要對上述反應室腔體因洗淨及再生導致使用壽命減短，同時酸鹼化學溶液大量使用對環境造成影響的問題提出解決方法。Therefore, it is indeed necessary to propose a solution to the problem that the life of the reaction chamber cavity is shortened due to washing and regeneration, and the use of a large amount of acid-base chemical solution affects the environment.
本發明之一目的在於提供一種物理氣相沉積之反應室腔體零件之清潔方法，其能增加物理氣相沉積之反應室腔體之使用壽命。SUMMARY OF THE INVENTION One object of the present invention is to provide a method of cleaning a chamber chamber part of a physical vapor deposition process which increases the service life of a chamber of a physical vapor deposition chamber.
本發明之又一目的在於提供一種物理氣相沉積之反應室腔體零件之清潔方法，能簡化反應室腔體零件表面形成之金屬鍍膜的去除過程。Another object of the present invention is to provide a method for cleaning a chamber chamber of a physical vapor deposition chamber, which can simplify the removal process of the metal coating formed on the surface of the chamber portion of the reaction chamber.
為達到上述目的，根據本發明之一特點係提供一種物理氣相沉積之反應室腔體零件之清潔方法，包括：清洗該反應室腔體零件；對該反應室腔體零件進行塗膜以形成一中介層；以及當該中介層表面累積一特定厚度之金屬鍍膜後，去除該中介層。In order to achieve the above object, according to a feature of the present invention, a method for cleaning a chamber chamber part of a physical vapor deposition process comprises: cleaning a chamber part of the reaction chamber; and coating a chamber part of the reaction chamber to form a film. An interposer; and after the surface of the interposer accumulates a specific thickness of the metal coating, the interposer is removed.
本發明之物理氣相沉積之反應室腔體零件之清潔方法藉由該中介層來增加該反應室腔體零件及該金屬鍍膜兩者之間的黏著力，防止該金屬鍍膜的掉落。此外，當去除該金屬鍍膜時，該中介層作為一介面防止破壞該反應室腔體零件且能簡化去除過程。The cleaning method of the chamber chamber part of the physical vapor deposition of the present invention increases the adhesion between the chamber chamber part and the metal plating film by the interposer to prevent the metal coating film from falling. In addition, when the metal coating is removed, the interposer acts as an interface to prevent damage to the chamber components and simplifies the removal process.
以下結合附圖對本發明的技術方案進行詳細說明。The technical solution of the present invention will be described in detail below with reference to the accompanying drawings.
請參閱第2圖及第3A-3E圖，第2圖係繪示根據本發明物理氣相沉積反應室腔體零件300之清潔方法流程圖，第3A-3E圖係繪示該反應室腔體零件300之清潔方法示意圖。Please refer to FIG. 2 and FIG. 3A-3E. FIG. 2 is a flow chart showing the cleaning method of the physical vapor deposition reaction chamber cavity component 300 according to the present invention, and FIG. 3A-3E is a diagram showing the reaction chamber cavity. Schematic diagram of the cleaning method of the part 300.
於步驟S200中，清洗該反應室腔體零件300，以去除其表面之微塵粒子及副生成物，清洗完成後如第3A圖所示。該反應室腔體零件300係指反應室腔體內部之構成元件，例如第1圖所示之該遮覆板40或該母材70。該遮覆板40用以承載第1圖之基板10。該母材70包括形成反應室腔體空間之一底壁及複數個側壁。In step S200, the reaction chamber cavity component 300 is cleaned to remove dust particles and by-products on the surface thereof, as shown in FIG. 3A after cleaning. The reaction chamber cavity component 300 is a component of the interior of the reaction chamber cavity, such as the cover plate 40 or the base material 70 shown in FIG. The cover plate 40 is used to carry the substrate 10 of FIG. The base material 70 includes a bottom wall and a plurality of side walls forming a cavity of the reaction chamber.
於步驟S210中，對該反應室腔體零件300進行塗膜以形成一中介層302，如第3B圖所示。塗膜的材質為可懸浮於非酸性化學溶液之材質或非鹼性化學溶液之材質。In step S210, the reaction chamber cavity part 300 is coated to form an interposer 302, as shown in FIG. 3B. The material of the coating film is a material that can be suspended in a non-acid chemical solution or a non-alkaline chemical solution.
該中介層302可以藉由將懸浮有塗膜材質的非酸性化學溶液或非鹼性化學溶液均勻噴塗或刷塗該反應室腔體零件300表面來形成。此外，該反應室腔體零件300表面除潔淨度要求外，於形成該中介層302的步驟之前，可以進一步對該反應室腔體零件300表面進行前置處理以增加該中介層302之附著能力、均熱性、厚度均勻性，例如利用噴砂來增加或控制該反應室腔體零件300表面之粗糙度。該中介層302之厚度可以因應各種物理氣相沉積製程而作不同之變化，使得該中介層302之製造成本與該反應室腔體零件300之清潔週期兩者之間達到最佳化之設計。The interposer 302 can be formed by uniformly spraying or brushing the surface of the reaction chamber cavity part 300 with a non-acid chemical solution or a non-alkaline chemical solution in which a coating material is suspended. In addition, in addition to the cleanliness requirement of the surface of the reaction chamber cavity component 300, the surface of the reaction chamber cavity component 300 may be further pre-processed to increase the adhesion capability of the interposer 302 before the step of forming the interposer 302. , soaking, thickness uniformity, for example, by sand blasting to increase or control the roughness of the surface of the chamber component 300 of the reaction chamber. The thickness of the interposer 302 can be varied differently depending on various physical vapor deposition processes, such that the manufacturing cost of the interposer 302 and the cleaning cycle of the chamber cavities 300 are optimized.
步驟S220中，當該中介層302表面累積因實施物理氣相沉積製程所產生之金屬鍍膜304達特定厚度時，該金屬鍍膜304會發生破裂及剝落，如第3C圖所示，藉由去除該中介層302可同時去除該金屬鍍膜304，如第3D圖所示。去除完成後如第3E圖所示，僅留下去除過程中未經破壞之該反應室腔體零件300。該金屬鍍膜304可例如為實施物理氣相沉積時所形成。In step S220, when the surface of the interposer 302 accumulates the metal plating film 304 generated by the physical vapor deposition process to a certain thickness, the metal plating film 304 may be cracked and peeled off, as shown in FIG. 3C, by removing the metal coating film 304. The interposer 302 can simultaneously remove the metal plating film 304 as shown in FIG. 3D. After the removal is completed, as shown in Fig. 3E, only the reaction chamber cavity part 300 which has not been destroyed during the removal process is left. The metal plating film 304 can be formed, for example, when physical vapor deposition is performed.
該中介層302係作為該反應室腔體零件300與該金屬鍍膜304間之中間物質，用以增進兩者間之黏著力，防止因實施物理氣相沉積製程所產生之該金屬鍍膜304剝落至如第1圖之基板100。此外，當去除該中介層302時，該中介層302係作為一介面，使得該金屬鍍膜304能隨著該中介層302剝離，大幅簡化該金屬鍍膜304從該反應室腔體零件300剝離之過程。剝離之過程係以非酸性溶液或非鹼性溶液浸潤批覆該金屬鍍膜304之該反應室腔體零件300，或以加壓水柱或加壓空氣沖灌該反應室腔體零件300以將該金屬鍍膜304剝離。此外，可以進一步利用輔助工具使該金屬鍍膜304更快速地被剝離。當該金屬鍍膜304剝離後，若殘留部份未剝離之金屬鍍膜304可以重複上述步驟即可完全去除。The interposer 302 serves as an intermediate between the reaction chamber cavity component 300 and the metal plating film 304 to enhance the adhesion between the two, thereby preventing the metal coating 304 from being peeled off due to the physical vapor deposition process. The substrate 100 is as shown in FIG. In addition, when the interposer 302 is removed, the interposer 302 serves as an interface, so that the metal plating film 304 can be peeled off along the interposer 302, greatly simplifying the process of peeling the metal plating film 304 from the reaction chamber cavity part 300. . The stripping process is performed by infiltrating the reaction chamber cavity part 300 of the metal plating film 304 with a non-acid solution or a non-alkaline solution, or flushing the reaction chamber cavity part 300 with a pressurized water column or pressurized air to the metal The coating film 304 is peeled off. Further, the metal plating film 304 can be further peeled off more quickly by an auxiliary tool. After the metal plating film 304 is peeled off, if the remaining portion of the uncoated metal plating film 304 is repeated, the above steps can be completely removed.
經過剝離後之金屬鍍膜係呈固態塊狀或顆粒狀，以重力方式將其與污水分離後可完整收集，經純化後可再回收使用，由於再回收的過程無需經過任何化學溶解過程，因此回收再生效益極高且不會產生任何廢棄物及污染。After stripping, the metal coating is solid block or granular, which can be completely collected by gravity after separation from the sewage. After purification, it can be recycled. Since the recycling process does not require any chemical dissolution process, it is recycled. The recycling benefits are extremely high and do not generate any waste or pollution.
又，塗膜的材質可以進一步選擇具有下列至少一特性之材質：(1)符合反應室腔體使用環境之耐溫特性之材質，使得該中介層302於實施物理氣相沉積製程時不易被破壞；(2)能增加該金屬鍍膜304及該反應室腔體零件300兩者之間黏合性之材質，其中該金屬鍍膜304如鋁、鉬、氧化銦錫、銅，該反應室腔體零件300如鋁、不鏽鋼；(3)水溶性材質；(4)可懸浮於醇類、丙酮類、異丙酮類或水之材質，例如氮化硼或具有與氮化硼類似之耐酸鹼、不導電(高介電係數)、導熱性佳、高融點等特性之物質，使得該中介層302的去除過程更加快速。Moreover, the material of the coating film may further be selected from materials having at least one of the following characteristics: (1) a material conforming to the temperature resistance property of the environment in which the chamber of the reaction chamber is used, so that the interposer 302 is not easily damaged during the physical vapor deposition process. (2) a material capable of increasing the adhesion between the metal plating film 304 and the reaction chamber cavity component 300, wherein the metal plating film 304 is aluminum, molybdenum, indium tin oxide, copper, and the reaction chamber cavity part 300 Such as aluminum, stainless steel; (3) water-soluble materials; (4) can be suspended in alcohol, acetone, iso-acetone or water, such as boron nitride or with acid and alkali resistant, similar to boron nitride, non-conductive The substance (characteristic of high dielectric constant), good thermal conductivity, high melting point, etc., makes the removal process of the interposer 302 more rapid.
本發明係針對物理氣相沉積製程，因此可應用至相關產業，包括但不限於液晶薄膜顯示器產業、半導體元件製造產業、光學零件鍍膜產業及金屬材料鍍膜產業。The present invention is directed to a physical vapor deposition process and can be applied to related industries including, but not limited to, the liquid crystal thin film display industry, the semiconductor component manufacturing industry, the optical component coating industry, and the metal material coating industry.
綜上所述，雖然本發明已用較佳實施例揭露如上，然其並非用以限定本發明，本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。In view of the above, the present invention has been disclosed in the above preferred embodiments, and is not intended to limit the invention, and the present invention may be made without departing from the spirit and scope of the invention. Various modifications and refinements are made, and the scope of the present invention is defined by the scope of the appended claims.
100．．．基板100. . . Substrate
102．．．薄膜102. . . film
104．．．直流電源104. . . DC power supply
106．．．背板106. . . Backplane
108．．．遮覆板108. . . Cover plate
110．．．離子槍束110. . . Ion gun bundle
112．．．靶材112. . . Target
114．．．母材114. . . Base metal
300．．．反應室腔體零件300. . . Reaction chamber cavity part
302．．．中介層302. . . Intermediary layer
304．．．金屬鍍膜304. . . Metal coating
S200-S220．．．步驟S200-S220. . . step
第1圖係繪示習知物理氣相沉積之反應室腔體實施物理氣相沉積製程之示意圖；1 is a schematic view showing a physical vapor deposition process of a reaction chamber cavity of a conventional physical vapor deposition;
第2圖係繪示根據本發明物理氣相沉積反應室腔體零件之清潔方法流程圖；以及2 is a flow chart showing a cleaning method of a chamber part of a physical vapor deposition reaction chamber according to the present invention;
第3A-3E圖係繪示該反應室腔體零件之清潔方法示意圖。3A-3E is a schematic view showing the cleaning method of the chamber parts of the reaction chamber.
S200-S220．．．步驟S200-S220. . . step
Claims (12)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100148087A TWI490051B (en) | 2011-02-18 | 2011-12-22 | Method for cleaning physical vapor deposition chamber part |
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| Application Number | Priority Date | Filing Date | Title |
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| TW100105468 | 2011-02-18 | ||
| TW100148087A TWI490051B (en) | 2011-02-18 | 2011-12-22 | Method for cleaning physical vapor deposition chamber part |
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| Publication Number | Publication Date |
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| TW201235120A TW201235120A (en) | 2012-09-01 |
| TWI490051B true TWI490051B (en) | 2015-07-01 |
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| TW (1) | TWI490051B (en) |
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| CN115584475B (en) * | 2022-10-28 | 2024-06-07 | 富联科技(兰考)有限公司 | Method for cleaning coating equipment and coating equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5202008A (en) * | 1990-03-02 | 1993-04-13 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
| US5391275A (en) * | 1990-03-02 | 1995-02-21 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
| TW387133B (en) * | 1999-01-04 | 2000-04-11 | Ind Tech Res Inst | Lead frame material and method for manufacturing the same |
| TW512129B (en) * | 2001-02-12 | 2002-12-01 | Formfactor Inc | Method for forming microelectronic spring structures on a substrate |
| TW552624B (en) * | 2001-05-04 | 2003-09-11 | Tokyo Electron Ltd | Ionized PVD with sequential deposition and etching |
-
2011
- 2011-12-22 TW TW100148087A patent/TWI490051B/en not_active IP Right Cessation
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2012
- 2012-02-14 KR KR1020120014903A patent/KR20120095307A/en not_active Application Discontinuation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5202008A (en) * | 1990-03-02 | 1993-04-13 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
| US5391275A (en) * | 1990-03-02 | 1995-02-21 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
| TW387133B (en) * | 1999-01-04 | 2000-04-11 | Ind Tech Res Inst | Lead frame material and method for manufacturing the same |
| TW512129B (en) * | 2001-02-12 | 2002-12-01 | Formfactor Inc | Method for forming microelectronic spring structures on a substrate |
| TW552624B (en) * | 2001-05-04 | 2003-09-11 | Tokyo Electron Ltd | Ionized PVD with sequential deposition and etching |
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| Publication number | Publication date |
|---|---|
| KR20120095307A (en) | 2012-08-28 |
| TW201235120A (en) | 2012-09-01 |
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