TWI467339B - 光阻下層膜形成組成物及使用其之圖型形成方法 - Google Patents

光阻下層膜形成組成物及使用其之圖型形成方法 Download PDF

Info

Publication number
TWI467339B
TWI467339B TW98138750A TW98138750A TWI467339B TW I467339 B TWI467339 B TW I467339B TW 98138750 A TW98138750 A TW 98138750A TW 98138750 A TW98138750 A TW 98138750A TW I467339 B TWI467339 B TW I467339B
Authority
TW
Taiwan
Prior art keywords
underlayer film
photoresist
forming composition
film forming
group
Prior art date
Application number
TW98138750A
Other languages
English (en)
Chinese (zh)
Other versions
TW201019049A (en
Inventor
Yoshiomi Hiroi
Tomohisa Ishida
Rikimaru Sakamoto
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW201019049A publication Critical patent/TW201019049A/zh
Application granted granted Critical
Publication of TWI467339B publication Critical patent/TWI467339B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Epoxy Resins (AREA)
TW98138750A 2008-11-12 2009-11-12 光阻下層膜形成組成物及使用其之圖型形成方法 TWI467339B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008289665 2008-11-12

Publications (2)

Publication Number Publication Date
TW201019049A TW201019049A (en) 2010-05-16
TWI467339B true TWI467339B (zh) 2015-01-01

Family

ID=42169986

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98138750A TWI467339B (zh) 2008-11-12 2009-11-12 光阻下層膜形成組成物及使用其之圖型形成方法

Country Status (3)

Country Link
JP (1) JP5282917B2 (ja)
TW (1) TWI467339B (ja)
WO (1) WO2010055852A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101711424B1 (ko) * 2009-01-16 2017-03-02 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 반도체 기판 코팅을 위한 비중합체성 결합제
KR101432605B1 (ko) * 2010-12-16 2014-08-21 제일모직주식회사 하드마스크 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스
KR101747230B1 (ko) 2013-02-21 2017-06-14 제일모직 주식회사 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
US10053539B2 (en) 2015-12-01 2018-08-21 Jsr Corporation Composition for film formation, film, production method of patterned substrate, and compound
KR102456124B1 (ko) 2015-12-08 2022-10-19 제이에스알 가부시끼가이샤 막 형성용 조성물, 막, 패턴이 형성된 기판의 제조 방법 및 화합물
WO2017187969A1 (ja) * 2016-04-28 2017-11-02 日産化学工業株式会社 レジスト下層膜形成組成物
JP7004181B2 (ja) * 2016-10-18 2022-01-21 日産化学株式会社 プリント配線板形成用エポキシ樹脂組成物
US11650506B2 (en) 2019-01-18 2023-05-16 Applied Materials Inc. Film structure for electric field guided photoresist patterning process
KR20230069950A (ko) * 2020-09-16 2023-05-19 닛산 가가쿠 가부시키가이샤 단차기판 피복 조성물

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200422768A (en) * 2002-10-08 2004-11-01 Brewer Science Inc Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties
TW200609681A (en) * 2004-05-14 2006-03-16 Nissan Chemical Ind Ltd Antireflective film-forming composition containing vinyl ether compound
TW200827935A (en) * 2006-09-29 2008-07-01 Tokyo Ohka Kogyo Co Ltd Pattern formation method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200422768A (en) * 2002-10-08 2004-11-01 Brewer Science Inc Bottom anti-reflective coatings derived from small core molecules with multiple epoxy moieties
TW200609681A (en) * 2004-05-14 2006-03-16 Nissan Chemical Ind Ltd Antireflective film-forming composition containing vinyl ether compound
TW200827935A (en) * 2006-09-29 2008-07-01 Tokyo Ohka Kogyo Co Ltd Pattern formation method

Also Published As

Publication number Publication date
JP5282917B2 (ja) 2013-09-04
WO2010055852A1 (ja) 2010-05-20
TW201019049A (en) 2010-05-16
JPWO2010055852A1 (ja) 2012-04-12

Similar Documents

Publication Publication Date Title
TWI467339B (zh) 光阻下層膜形成組成物及使用其之圖型形成方法
JP5382390B2 (ja) 硫黄原子を含有するレジスト下層膜形成用組成物及びレジストパターンの形成方法
JP5099381B2 (ja) レジスト下層膜形成組成物及びそれを用いた半導体装置の製造方法並びにレジスト下層膜形成組成物用添加剤
TWI435179B (zh) 光阻底層膜形成組成物及使用其之光阻圖型的形成方法
US9274426B2 (en) Antireflective coating compositions and processes thereof
EP2560049A2 (en) Composition for forming a silicon-containing resist underlayer film and patterning processing using the same
EP2657240A1 (en) Silicon compound, silicon-containing compound, composition for forming resits underlayer film containing the same and patterning process
TWI515196B (zh) 含有此熱交聯促進劑之含聚矽氧烷之光阻下層膜形成用組成物、及使用此組成物之圖案形成方法
US8361695B2 (en) Resist underlayer film forming composition and method for forming resist pattern
EP2857467B1 (en) Composition for forming a silicon-containing resist under layer film and patterning process
JP5333737B2 (ja) レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
TW201527401A (zh) 光阻下層膜形成組成物及使用其之光阻圖型之形成方法
JP7256482B2 (ja) リソグラフィー用膜形成材料、リソグラフィー用膜形成用組成物、リソグラフィー用下層膜及びパターン形成方法
JP7255589B2 (ja) レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターン形成方法
TWI462960B (zh) 光阻下層膜形成組成物及使用其之光阻圖型之形成方法
TW201708296A (zh) 陽離子聚合性光阻下層膜形成組成物
KR20200054211A (ko) 레지스트 하층막 형성 조성물
JP7342953B2 (ja) 組成物、ケイ素含有膜、ケイ素含有膜の形成方法及び半導体基板の処理方法
EP4303657A2 (en) Composition for forming metal oxide film, patterning process, and method for forming metal oxide film
KR102563289B1 (ko) 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
TW202344661A (zh) 有機膜形成用平坦化劑、有機膜形成用組成物、有機膜形成方法、及圖案形成方法
TW202232235A (zh) 用於平版印刷的化學勻相矽硬遮罩