TWI462091B - CoFeNi alloy and sputtering target for soft magnetic film in vertical magnetic recording medium - Google Patents
CoFeNi alloy and sputtering target for soft magnetic film in vertical magnetic recording medium Download PDFInfo
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- 239000000956 alloy Substances 0.000 title claims description 54
- 229910045601 alloy Inorganic materials 0.000 title claims description 54
- 229910019233 CoFeNi Inorganic materials 0.000 title claims description 38
- 238000005477 sputtering target Methods 0.000 title claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 9
- 229910052726 zirconium Inorganic materials 0.000 claims description 8
- 230000004907 flux Effects 0.000 description 21
- 238000005260 corrosion Methods 0.000 description 11
- 230000007797 corrosion Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 229910052758 niobium Inorganic materials 0.000 description 10
- 229910052735 hafnium Inorganic materials 0.000 description 7
- 229910052742 iron Inorganic materials 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 229910052715 tantalum Inorganic materials 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052804 chromium Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
- G11B5/667—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers including a soft magnetic layer
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/07—Alloys based on nickel or cobalt based on cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/06—Ferrous alloys, e.g. steel alloys containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/10—Ferrous alloys, e.g. steel alloys containing cobalt
- C22C38/105—Ferrous alloys, e.g. steel alloys containing cobalt containing Co and Ni
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/12—Ferrous alloys, e.g. steel alloys containing tungsten, tantalum, molybdenum, vanadium, or niobium
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C38/00—Ferrous alloys, e.g. steel alloys
- C22C38/14—Ferrous alloys, e.g. steel alloys containing titanium or zirconium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/131—Amorphous metallic alloys, e.g. glassy metals containing iron or nickel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/13—Amorphous metallic alloys, e.g. glassy metals
- H01F10/132—Amorphous metallic alloys, e.g. glassy metals containing cobalt
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/851—Coating a support with a magnetic layer by sputtering
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Magnetic Record Carriers (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
- Thin Magnetic Films (AREA)
- Soft Magnetic Materials (AREA)
Description
本申請案係依據2009年6月10日所申請之日本國專利申請案第2009-139151號,主張優先前者,其全體之揭示內容依參照組入於本說明書中。
本發明係有關用以使用來作為垂直磁性記錄媒體中之軟磁性膜層之CoFeNi系合金、及其濺鍍靶材者。
近年,磁性記錄技術之進步很明顯,為了驅動之大容量化,磁性記錄媒體之高記錄密度化遂進展起來。例如,可實現較以往普及之面內磁性記錄媒體更高記錄密度的垂直磁性記錄方式被實用化。所謂垂直磁性記錄方式係相對於垂直磁性記錄媒體之磁性膜中的媒體面,形成為磁化容易軸配向於垂直方向者,適用於高記錄密度之方法。繼而,在垂直磁性記錄方式中係已開發出具有提高記錄感度之磁性記錄膜層與軟磁性膜層之2層記錄媒體。此磁性記錄膜層一般使用Co Cr Pt-SiO2
系合金。
另外,軟磁性膜層已知有以Co或Fe之軟磁性元素作為基材,添加可改善非晶質性之Zr、Hf、Ta、Nb及B的合金。例如,如揭示於專利文獻1之垂直磁性記錄媒體中之軟磁性膜層用合金或如揭示於專利文獻2之Co-Fe系合金濺鍍靶材及其製造方法。
於此垂直磁性記錄媒體之軟磁性膜層中係尋求高飽和磁束密度、高非晶質性、及高耐蝕性。進一步在近年中,目的在於減輕磁性記錄媒體用磁碟與讀寫用頭之接觸所產生的光碟之損傷,於軟磁性膜層遂要求硬度起來。
專利文獻1:特開2008-299905號公報
專利文獻2:特開2008-189996號公報
本發明人等藉由具有高飽和磁束密度、高非晶質性及高耐蝕性,且使Ta及/或Nb、與B量為特定之比率,俾可得到具有較專利文獻1所提出之合金更高硬度的合金,而得到此見識。
因此,本發明之目的在於提供一種飽和磁束密度、非晶質性、耐蝕性及硬度優異之垂直磁性記錄媒體用軟磁性合金、用以製作此合金之薄膜的濺鍍靶材、及具有由此合金所構成之軟磁性膜層的垂直磁性記錄媒體。
若依本發明之第一態樣,可提供一種CoFeNi系合金,其係垂直磁性記錄媒體中之軟磁性膜層用CoFeNi系合金,前述CoFeNi系合金就at%含有Co+Fe+Ni:70~92%(但Ni係包含0)、Ta:1~8%、及、B:超過7%且20%以下而成,前述CoFeNi系合金之組成(at%)為滿足以下之比率者:Co/(Co+Fe+Ni):0.1~0.9、Fe/(Co+Fe+Ni):0.1~0.65、Ni/(Co+Fe+Ni):0~0.35,及B/Ta:1~8。
若依本發明之第二態樣,可提供一種CoFeNi系合金,其係垂直磁性記錄媒體中之軟磁性膜層用CoFeNi系合金,前述CoFeNi系合金就at%含有Co+Fe+Ni:70~92%(但Ni係包含0)、Nb+Ta:1~8%、B:超過7%且20%以下而成,前述CoFeNi系合金之組成(at%)為滿足以下之比率者:Co/(Co+Fe+Ni):0.1~0.9、Fe/(Co+Fe+Ni):0.1~0.65、Ni/(Co+Fe+Ni):0~0.35,及B/(Nb+Ta):1~8。
若依本發明之第三態樣,可提供一種CoFeNi系合金,其係垂直磁性記錄媒體中之軟磁性膜層用CoFeNi系合金,前述CoFeNi系合金就at%含有Co+Fe+Ni:70~92%(但Ni係包含0)、Zr+Hf+Nb+Ta:1~8%、B:超過7%且20%以下、Zr+Hf:0~不足2%,及Al+Cr:0~5%而成,前述CoFeNi系合金之組成(at%)為滿足以下之比率者:Co/(Co+Fe+Ni):0.1~0.9、Fe/(Co+Fe+Ni):0.1~0.65、Ni/(Co+Fe+Ni):0~0.35、及B/(Nb+Ta):1~8。
若依本發明之另一態樣,可提供一種濺鍍靶材,其係由上述各態樣之CoFeNi系合金所構成。
若依本發明之再另一態樣,可提供一種垂直磁性記錄媒體,其係具有上述各態樣之CoFeNi系合金所構成的軟磁性膜層。
以下,詳細說明有關本發明。又,只要無特別聲明,本發明所記載之百分率(%)意指原子%(at%)者。
本發明係關於垂直磁性記錄媒體中之軟磁性膜層用CoFeNi系合金。此CoFeNi系合金就at%含有Co+Fe+Ni:70~92%(但Ni係包含0)、Ta:1~8%(第一態樣)、Nb+Ta:1~8%(第二態樣)、或Zr+Hf+Nb+Ta:1~8%(第三態樣)、及、B:超過7%且20%以下,較佳係從上述元素變成實質上(consisting essentially of),更佳係只由上述元素所構成(consisting of)。又,第三態樣之CoFeNi系合金係可進一步含有Zr+Hf:0~不足2%及Al+Cr:0~5%。此處,即使在第一至第三之任一的態樣中,CoFeNi系合金之組成(at%)為滿足以下之比率:Co/(Co+Fe+Ni):0.1~0.9、Fe/(Co+Fe+Ni):0.1~0.65、Ni/(Co+Fe+Ni):0~0.35,及B/Ta:1~8。
Co、Fe及Ni任一者均具有軟磁性特性之元素。Co、Fe及Ni之各元素的含量無特別限定,但宜為Co:9~80%、Fe:5~60%、Ni:0~40%,更佳係Co:25~80%、Fe:15~52%、Ni:0~10%。本發明之合金中的Co、Fe及Ni之合計量(亦即Co+Fe+Ni量)為70~92%,更佳係80~92%。若此Co+Fe+Ni量不足70%,飽和磁束密度不充分,若超過92%,反之,Zr、Hf、Ta、Nb、B之合計量變少,無法得到充分的非晶質性。
若比較此等之3元素,飽和磁束密度大概依Fe>Co>Ni之順序變小,另外,耐蝕性大概依Ni>Co>Fe之順序欠缺。考量如此之飽和磁束密度與耐蝕性之均衡,Co、Fe及Ni之各量對Co+Fe+Ni之比率係在以下之範圍內:Co/(Co+Fe+Ni):0.1~0.9,較佳係0.3~0.9,Fe/(Co+Fe+Ni):0.1~0.65,較佳係0.2~0.55,及Ni/(Co+Fe+Ni):0~0.35,較佳係0~0.10。
若Ni/(Co+Fe+Ni)超過0.35,無法得到充分的飽和磁束密度。若Fe/(Co+Fe+Ni)低於0.1,無法得到充分的飽和磁束密度。另外,若超過0.65,耐蝕性會劣化。
如此地,若決定Ni/(Co+Fe+Ni)及Fe/(Co+Fe+Ni)之範圍,Co/(Co+Fe+Ni)之下限變成O之(Ni/(Co+Fe+Ni)=0.35、Fe/(Co+Fe+Ni)=0.65時),Co為極少時,在Ni/(Fe+Ni)為0.25~0.40附近,存在飽和磁束密度變成極小之特異點。因此,使Co/(Co+Fe+Ni)之下限為0.10,另外,Co/(Co+Fe+Ni)之上限變成0.9之(Ni/(Co+Fe+Ni)=0、Fe/(Co+Fe+Ni)=0.1時)。
Ta、Nb及B係在本發明之合金中,任一者均為可改善非晶質性之元素。Ta、Nb及B之各元素的含量無特別限定,宜Ta:1~8%、Nb:≦5%、B超過7%且20%以下,更佳係Ta:2~6%、Nb:0~3%、B:7.5~15%。繼而,本發明之合金中的Nb及Ta的合計量(亦即Nb+Ta量)為1~8%。Nb+Ta量不足1%,無法得到充分的非晶質性,若超過8%,無法得到充分的飽和磁束密度。B為7%以下時,無法得到充分的非晶質性,若超過20%,無法得到充分的飽和磁束密度。
在本發明之合金中,B量對Ta+Nb量之比率即B/(Ta+Nb)為1~8,宜為1.5~6。若為如此之範圍內,可實現以往未看到之高硬度。高硬度化之詳細原理係不明,但在合金中之Ta原子及/或Nb原子、與B原子之結合有可能影響。此處,B/(Ta+Nb)不足1或超過8時,無法得到充分的硬度。
Zr及Hf任一者均為可改善非晶質性之元素。Zr及Hf之各元素的含量無特別限定,但宜Zr:≦2%、Hf:≦1.0%。Zr、Hf、Nb及Ta之合計量(亦即Zr+Hf+Nb+Ta量)可添加1~8%,Zr及Hf之合計量(亦即Zr+Hf量)可在0~不足2%之範圍添加,此態樣相當於本發明之第三態樣。Zr+Hf+Nb+Ta量不足1%時,非晶質性不充分,若超過8%,無法得到充分的飽和磁束密度。Zr+Hf量為2%以上時,硬度會降低。
Al及Cr在本發明之合金中為改善耐蝕性之元素。Al及Cr之各元素的含量無特別限定,但宜Al≦3%、Cr≦3%。Al及Cr之合計量(亦即Al+Cr量)係使上限為5%。若Al+Cr量超過5%,飽和磁束密度降低。
又,一般,在垂直磁性記錄媒體中之軟磁性膜層係濺鍍與其成分相同之成分的濺鍍靶材,成膜於玻璃基板等之上而得到。此處,藉濺鍍成膜之薄膜被急冷。然而,以下敘述之實施例及比較例係使用以單輥式之液體急冷裝置製作的急冷薄帶作為供試料。此係實際上藉濺鍍急冷成膜之薄膜中,對成分之各種特性的影響,藉液體急冷薄帶簡單地評估。
以下,依實施例具體地說明本發明。於表1之急冷薄帶的成分所秤量之原料30g以直徑10mm長40mm左右的水冷銅鑄模在減壓之Ar中進行電弧溶解,作為急冷薄帶之熔解母材。急冷薄帶之製作條件係以單輥方式,於直徑15mm之石英管中安裝於此熔解母材,以出熱水噴嘴徑為1mm,環境氣壓61kPa、噴霧壓差69kPa、銅輥(Φ
300mm)之旋轉數為3000rpm,使銅輥與出熱水噴嘴之間隙為0.3mm而出熱水。出熱水溫度係各熔解母材之溶掉後。
如上述做法所製作之急冷薄帶作為供試材,評估以下之項目。
有關15mg左右的供試材,使用VSM裝置(振動試料型磁力計),以施加磁場1.2 MA/m(15 kOe)測定飽和磁束密度(T)。
藉X線繞射進行急冷薄帶之非晶質性的評估。一般,若測定非晶質材料之X線繞射圖型,看不到繞射譜峯,而成為非晶質特有之暈圖型(hala-pattern)。又,並非完全的非晶質時,雖可看到繞射譜峯,但與結晶材料比較,譜峯高度變低,成為半寬值(成為繞射譜峯之一半高度時的角度之寬)的大寬譜峯。此半寬值係與材料之非晶質性有相關,非晶質性愈高,繞射譜峯係有變成更寬,且半寬值變大之特徵。因此,依下述之方法而評估非晶質性。
於玻璃板以雙面膠帶貼黏供試材,以X線繞射裝置得到繞射圖型。此時,測定面係成為急冷薄帶之銅輥接觸面,使供試材貼黏於玻璃板。X線源係以Cu-kα線使掃描速度形成分速4°而測定。成為此繞射圖型之主峰的一半高度時的角度之寬進行圖像解析,求出半寬值,作為非晶質性之評估。
於玻璃板以雙面膠帶貼黏供試材,使5%NaCl的溶液為35℃而進行曝露16小時之鹽水噴霧試驗,急冷薄帶之耐蝕性依以下之基準進行評估。
×:全面生銹
△:一部分生銹
○:約無生銹
使急冷絲帶朝縱方向埋入樹脂,進行研磨,以維氏(Vickers)硬度計測定急冷薄帶之維氏硬度(HV)。測定荷重係以50g、n=10之平均進行評估。壓痕之尺寸為10μm左右。此等之評估試驗的結果表示於表2中。
在表1中,例1~9係本發明例,例10~20係比較例。
如表1所示般,例10係Ta、B之含量少,(Co+Fe+Ni)之含量多,且(Zr+Hf+Nb+Ta)之含量少,進一步B/(Nb+Ta)值大,故半寬值小,維氏硬度低。例11係B/(Nb+Ta)之值大,故維氏硬度低。例12係B/(Nb+Ta)之值小,故維氏硬度低。
例13係B之含量高且(Co+Fe+Ni)之含量少,故飽和磁束密度低。例14係(Zr+Hf+Nb+Ta)之含量高,且(Zr+Hf)之含量高,故飽和磁束密度低,維氏硬度低。例15係(Al+Cr)之含量多,故飽和磁束密度低。例16係Co/(Co+Fe+Ni)之值低,故飽和磁束密度低。
例17係Co/(Co+Fe+Ni)之值高,且Fe/(Co+Fe+Ni)之值低,故飽和磁束密度低。例18係Fe/(Co+Fe+Ni)之值高,故耐蝕性差。例19係Ni/(Co+Fe+Ni)之值高,故飽和磁束密度低。例20係Ta之含量高,且(Zr+Hf+Nb+Ta)之含量高,故飽和磁束密度低。然而,例1~9係任一者均滿足本發明之條件,故可知任一者之特性均優。
如以上般,同時添加Ta及/或Nb與B,且藉由形成特定之B/(Nb+Ta)比,可得到習知合金沒有的高硬度。藉此,可提供磁性特性、非晶質性、耐蝕性、及硬度優之合金。
Claims (9)
- 一種CoFeNi系合金,其係垂直磁性記錄媒體中之軟磁性膜層用CoFeNi系合金,前述CoFeNi系合金就at%含有Co+Fe+Ni:70~92%(但Ni係包含0)、Ta:1~8%、及、B:超過7%且20%以下而成,前述CoFeNi系合金之組成(at%)為滿足以下之比率者:Co/(Co+Fe+Ni):0.1~0.75、Fe/(Co+Fe+Ni):0.1~0.65、Ni/(Co+Fe+Ni):0~0.35,及B/Ta:1~8。
- 一種CoFeNi系合金,其係垂直磁性記錄媒體中之軟磁性膜層用CoFeNi系合金,前述CoFeNi系合金就at%含有Co+Fe+Ni:70~92%(但Ni係包含0)、Nb+Ta:1~8%、B:超過7%且20%以下而成,前述CoFeNi系合金之組成(at%)為滿足以下之比率者:Co/(Co+Fe+Ni):0.1~0.75、Fe/(Co+Fe+Ni):0.1~0.65、Ni/(Co+Fe+Ni):0~0.35,及B/(Nb+Ta):1~8。
- 一種CoFeNi系合金,其係垂直磁性記錄媒體中之軟磁性膜層用CoFeNi系合金,前述CoFeNi系合金就at%含有Co+Fe+Ni:70~92%(但Ni係包含0)、 Zr+Hf+Nb+Ta:1~8%、B:超過7%且20%以下、Zr+Hf:0~不足2%,及Al+Cr:0~5%而成,前述CoFeNi系合金之組成(at%)為滿足以下之比率者:Co/(Co+Fe+Ni):0.1~0.75、Fe/(Co+Fe+Ni):0.1~0.65、Ni/(Co+Fe+Ni):0~0.35、及B/(Nb+Ta):1~8。
- 一種濺鍍靶材,其係由申請專利範圍第1項之CoFeNi系合金所構成。
- 一種濺鍍靶材,其係由申請專利範圍第2項之CoFeNi系合金所構成。
- 一種濺鍍靶材,其係由申請專利範圍第3項之CoFeNi系合金所構成。
- 一種垂直磁性記錄媒體,其係具有申請專利範圍第1項之CoFeNi系合金所構成的軟磁性膜層。
- 一種垂直磁性記錄媒體,其係具有申請專利範圍第2項之CoFeNi系合金所構成的軟磁性膜層。
- 一種垂直磁性記錄媒體,其係具有申請專利範圍第3項之CoFeNi系合金所構成的軟磁性膜層。
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