TWI458804B - 黏著片 - Google Patents

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Publication number
TWI458804B
TWI458804B TW100121041A TW100121041A TWI458804B TW I458804 B TWI458804 B TW I458804B TW 100121041 A TW100121041 A TW 100121041A TW 100121041 A TW100121041 A TW 100121041A TW I458804 B TWI458804 B TW I458804B
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TW
Taiwan
Prior art keywords
adhesive
adhesive layer
film
sheet
die
Prior art date
Application number
TW100121041A
Other languages
English (en)
Other versions
TW201200576A (en
Inventor
Yuuki Nakamura
Masanobu Miyahara
Youji Katayama
Tsuyoshi Tamaki
Keiichi Hatakeyama
Takuji Ikeya
Original Assignee
Hitachi Chemical Co Ltd
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Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of TW201200576A publication Critical patent/TW201200576A/zh
Application granted granted Critical
Publication of TWI458804B publication Critical patent/TWI458804B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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Description

黏著片
本發明是有關於一種黏著片。
半導體裝置的製造步驟之一包括將經過所需的前處理而形成有電路的半導體晶圓切斷分離成多個晶片的切割步驟。於該步驟中，將晶圓固定用的切割片貼合於被稱為環形框的圓環狀或矩形環狀的框上，在將半導體晶圓貼附於該切割片後，按每個電路切割半導體晶圓而獲得半導體晶片。繼而，進行利用黏合機的延伸步驟、晶片安裝步驟，進而進行打線接合步驟、成型步驟來製造半導體裝置。
近年來，提出有於製造半導體裝置時，使用將切割片及晶粒黏著膜一體化而成的晶粒黏著膜一體型片材的方法。晶粒黏著膜一體型片材是兼具作為切割片的功能、及將晶片固定於導線架或配線基板等上的黏著劑的功能的多層切割片，具有與先前的方法相比可縮短加工步驟等優點。
然而，近年來，因半導體元件的高積體化、大晶片化、薄型化而導致切割後的晶片的拾取作業變得困難的情況增加。用於該些用途的切割片被要求微黏著於切割後的半導體晶片(例如Si晶片)-黏晶膜積層體。但是，若使切割片微黏著化，則存在對於環形框的黏著性亦變弱，於切割步驟中環形框自切割片剝離的情況。
因此，需要具有更高的切割性能的膠帶，業界已開發出一種於切割步驟中能夠以高黏著力保持晶圓(晶片)，於 拾取步驟中可藉由紫外線照射等來降低黏著力並可容易地拾取晶片的切割片(例如，參照下述專利文獻1、專利文獻2)。
先前技術文獻 專利文獻
專利文獻1：日本專利特開昭60-196956號公報
專利文獻2：日本專利特開昭61-28572號公報
但是，專利文獻1的紫外線硬化型切割片是藉由僅對所期望的部分照射紫外線來降低該部分的黏著力，但有時難以僅對所期望的部分高精度地照射紫外線。因此，存在難以獲得使於切割步驟中確實地保持晶圓或環形框的保持力、及於切割後容易地自晶片剝離的剝離容易性較平衡地並存的黏著層的情況。
另外，於專利文獻2中，由於黏晶膜僅積層於黏著性低的黏著層上，因此存在於切割步驟中黏晶膜的外周部分自黏著層剝離，貼附在黏晶膜上的晶片飛散的不良情況。
本發明是鑒於上述情況而完成的發明，其目的在於提供一種可維持拾取步驟中的黏晶膜及切割片間的剝離容易性，並可抑制切割步驟中的環形框的剝離及晶片的飛散的黏著片。
即，本發明提供一種黏著片，其包括：基材；第1黏著層，配置於基材上；第2黏著層，配置於第1黏著層上，並且具有露出第1黏著層的開口；以及黏晶膜，配置於第 1黏著層的自上述開口露出的部分；且黏晶膜的外周的至少一部分與第2黏著層接觸。
於本發明的黏著片中，藉由該片材具備不同於第1黏著層之第2黏著層，可個別地調整第1黏著層的黏著力與第2黏著層的黏著力。藉此，能夠以於拾取步驟中黏晶膜及切割片間的剝離變得容易的方式調整第1黏著層的黏著力，並以於切割步驟中環形框不自第2黏著層剝離的方式調整第2黏著層的黏著力。進而，於本發明的黏著片中，黏晶膜的外周的至少一部分與第2黏著層接觸，藉此黏晶膜的外周黏著於黏著力得到調整的第2黏著層上。藉此，於切割步驟中黏晶膜的外周部分成為剝離起點且黏晶膜剝離的情況得到抑制，因此可抑制晶片的飛散。
較佳為黏晶膜的外周的至少一部分與第2黏著層重疊。於此情況下，於切割步驟中黏晶膜的外周部分成為剝離起點且黏晶膜剝離的情況進一步得到抑制，因此可進一步抑制晶片的飛散。另外，根據此種構成，當將黏著片捲成輥狀時，藉由黏晶膜與第2黏著層的重疊部分而保護黏晶膜的中央部分，並可抑制捲痕轉印至黏晶膜上。
另外，第2黏著層的內周的至少一部分與黏晶膜重疊亦較佳。於此種構成中，當將黏著片捲成輥狀時，亦藉由黏晶膜與第2黏著層的重疊部分而保護黏晶膜的中央部分，並可抑制捲痕轉印至黏晶膜上。
黏晶膜與第2黏著層的重疊部分的寬度較佳為0.1mm~25mm。
本發明的黏著片是用於切割加工及黏晶加工。
[發明的效果]
根據本發明，提供一種可維持拾取步驟中的黏晶膜及切割片間的剝離容易性，並可抑制切割步驟中的環形框的剝離及晶片的飛散的黏著片。於本發明中，可容易地拾取經單片化的帶有黏晶膜的半導體晶片，藉此可提昇半導體裝置的良率。
為讓本發明之上述和其他目的、特徵和優點能更明顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細說明如下。
以下，視需要參照圖式對本發明的較佳的實施形態進行詳細說明。圖中，對同一或同等的構成要素標註同一符號，並適宜省略重複的說明。
圖1是表示黏著片的一實施形態的平面圖，圖2是沿著圖1的II-II線的示意剖面圖。圖3是表示黏著片上貼附有半導體晶圓及環形框的積層物的示意剖面圖。
圖1、圖2所示的半導體裝置製造用黏著片(晶粒黏著膜一體型片材)1包括：長條的基材膜10、長條的黏著層(第1黏著層)20、黏著層(第2黏著層)30、以及黏晶膜40。如圖3所示，於半導體裝置製造用黏著片1上配置環形框(切割環)50與半導體晶圓60。
作為基材膜10，例如可使用：聚乙烯膜、聚丙烯膜、聚氯乙烯膜、聚對苯二甲酸乙二酯膜、乙烯-乙酸乙烯酯共 聚物膜、離子聚合物樹脂膜等。基材膜10的厚度較佳為例如15μm~200μm左右。
黏著層20是以覆蓋基材膜10的一個主面的整體的方式配置。黏著層20的厚度較佳為例如5μm~50μm左右。作為構成黏著層20的黏著劑，例如可使用：丙烯酸系黏著劑、橡膠系黏著劑、聚矽氧系黏著劑等。
黏著層20是於拾取步驟中可容易地自黏晶膜40剝離的弱黏著性的感壓黏著劑層。黏著層20與黏晶膜40的黏著力較佳為0.6N/25mm以下，更佳為0.4N/25mm以下，進而更佳為0.3N/25mm以下。若黏著層20具有此種黏著力，則於拾取步驟中可在黏著層20及黏晶膜40間容易地進行剝離。黏著層20的黏著力可藉由使用例如Orientec製造的「Tensilon拉伸強度試驗機RTA-100型」或與其相似的試驗機於垂直方向(90°剝離)上以200mm/min的速度剝離時的剝離力來測定。
黏著層30是沿著基材膜10的長邊方向於黏著層20上隔開規定的間隔而配置有多個。黏著層30是配置於黏著層20上的環形框50的預定貼附區域。
各黏著層30例如呈圓環狀，於各黏著層30的中央部，自黏著層30的表面至背面設置有剖面為圓形狀的開口30a。黏著層20的自開口30a露出的部分25成為黏晶膜40的預定貼附區域。黏著層30的開口30a的直徑較佳為半導體晶圓60的晶圓直徑以上，更佳為大於半導體晶圓60的晶圓直徑。另外，黏著層30的開口30a的直徑較佳 為環形框50的開口50a的內徑尺寸以下，更佳為小於環形框50的開口50a的內徑尺寸。黏著層30的開口30a的直徑例如為210mm左右。黏著層30的厚度較佳為例如5μm~30μm左右。
黏著層30是具有於切割步驟中可確實地保持環形框50的黏著性的環形框固定用的強黏著性層。作為構成黏著層30的黏著劑，例如可使用丙烯酸系黏著劑、橡膠系黏著劑、聚矽氧系黏著劑等。將黏著層30的黏著力調整為大於黏著層20的黏著力。
黏著層30與環形框50的黏著力較佳為小於黏著層30與黏著層20的黏著力，且為0.6N/25mm以上。黏著層30與環形框50的黏著力更佳為0.8N/25mm以上，進而更佳為1.0N/25mm以上。若黏著層30具有此種黏著力，則於切割步驟中環形框50自黏著層30剝離的情況進一步得到抑制。黏著層30的黏著力可藉由使用例如Orientec製造的「Tensilon拉伸強度試驗機RTA-100型」或與其相似的試驗機於垂直方向(90°剝離)上以200mm/min的速度剝離時的剝離力來測定。
於黏著層20的短邊方向的兩端部，以沿著黏著層30的形狀的方式遠離黏著層30而配置有黏著層32。黏著層32是由與黏著層30相同的黏著劑構成。
黏晶膜40例如呈圓形狀。黏晶膜40的厚度較佳為例如1μm~100μm左右。黏晶膜40含有例如熱硬化性成分及/或熱塑性樹脂、以及填料。熱硬化性成分是藉由加熱 而交聯後可形成硬化體的成分，例如含有熱硬化性樹脂，並任意地含有該熱硬化性樹脂的硬化劑。作為熱硬化性樹脂，可使用先前公知的熱硬化性樹脂，並無特別限制，其中，就作為半導體周邊材料的便利性(容易獲得高純度品、品種多、易於控制反應性)的觀點而言，較佳為環氧樹脂、以及1分子中具有至少2個熱硬化性醯亞胺基的醯亞胺化合物。環氧樹脂通常與環氧樹脂硬化劑併用。
環氧樹脂較佳為具有2個以上環氧基的化合物。作為環氧樹脂，就硬化性或硬化物特性的觀點而言，較佳為酚的縮水甘油醚型的環氧樹脂。作為酚的縮水甘油醚型的環氧樹脂，例如可列舉：雙酚A、雙酚AD、雙酚S、雙酚F或鹵化雙酚A與表氯醇的縮合物，苯酚酚醛清漆樹脂的縮水甘油醚，甲酚酚醛清漆樹脂的縮水甘油醚，以及雙酚A酚醛清漆樹脂的縮水甘油醚。該些之中，就硬化物的交聯密度高，可提高膜的加熱時的黏著強度的觀點而言，較佳為酚醛清漆型環氧樹脂(甲酚酚醛清漆樹脂的縮水甘油醚及苯酚酚醛清漆樹脂的縮水甘油醚等)。該些可單獨使用一種、或者將多種加以組合來使用。
作為環氧樹脂硬化劑，例如可列舉：酚系化合物、脂肪族胺、脂環族胺、芳香族聚胺、聚醯胺、脂肪族酸酐、脂環族酸酐、芳香族酸酐、二氰基二醯胺、有機酸二醯肼、三氟化硼胺錯合物、咪唑類、以及三級胺。該些之中，較佳為酚系化合物，其中，特佳為具有2個以上酚性羥基的酚系化合物。更具體而言，較佳為萘酚酚醛清漆樹脂及三 苯酚酚醛清漆樹脂。若將該些酚系化合物用作環氧樹脂硬化劑，則可有效地減少用於封裝組合的加熱時的晶片表面及裝置的污染、或者成為臭氣的原因的逸氣的產生。
作為熱塑性樹脂，例如可列舉：聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、苯氧樹脂、丙烯酸樹脂、聚醯胺樹脂及胺基甲酸酯樹脂。該些可單獨使用一種、或者將多種加以組合來使用。
填料較佳為無機填料。更具體而言，較佳為包含選自由氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、氮化鋁、硼酸鋁晶鬚、氮化硼、結晶性二氧化矽、非晶性二氧化矽及銻氧化物所組成的組群中的至少一種無機材料的無機填料。該些之中，為了提昇導熱性，較佳為氧化鋁、氮化鋁、氮化硼、結晶性二氧化矽及非晶性二氧化矽。為了調整熔融黏度或賦予搖變性，較佳為氫氧化鋁、氫氧化鎂、碳酸鈣、碳酸鎂、矽酸鈣、矽酸鎂、氧化鈣、氧化鎂、氧化鋁、結晶性二氧化矽及非晶性二氧化矽。另外，為了提昇耐濕性，較佳為氧化鋁、二氧化矽、氫氧化鋁及銻氧化物。該些可單獨使用一種、或者將多種加以組合來使用。
黏晶膜40是以與開口30a形成同心的方式配置於黏著層30的開口30a內，並覆蓋黏著層20的自開口30a露出的部分25的整體。另外，黏晶膜40的外周部分40a自開口30a伸出，並以與黏著層30的表面的內周側的緣部接觸的狀態與黏著層30重疊。即，黏晶膜40具有與黏著層30 重疊的外周部分40a、及不與黏著層30重疊的中央部分40b。黏晶膜40若外周的至少一部分與黏著層30接觸，則可抑制切割步驟中的黏晶膜40的剝離，但就進一步抑制切割步驟中的剝離的觀點而言，較佳為外周部分40a的至少一部分與黏著層30重疊，更佳為整個外周部分40a沿著黏晶膜40的外周與黏著層30重疊。
黏著層30與黏晶膜40的重疊範圍(寬度)較佳為0.1mm~25mm，更佳為0.5mm~15mm，進而更佳為1.0mm~10mm。若黏晶膜40的重疊範圍為此種範圍，則於層壓步驟中，可僅將黏晶膜40的與黏著層20接觸的部分(上述中央部分40b)貼附於半導體晶圓60上，且於切割步驟中黏晶膜40的外周部分40a成為自黏著層30剝離的剝離起點的情況進一步得到抑制，因此半導體晶片飛散的情況進一步得到抑制。
黏著層30與黏晶膜40的黏著力較佳為0.8N/25mm以上，更佳為1.0N/25mm以上，進而更佳為1.2N/25mm以上。若黏著層30具有此種黏著力，則於切割步驟中黏晶膜40自黏著層30剝離的情況進一步得到抑制。黏著層30的黏著力可藉由使用例如Orientec製造的「Tensilon拉伸強度試驗機RTA-100型」或與其相似的試驗機於垂直方向(90°剝離)上以200mm/min的速度剝離時的剝離力來測定。
環形框50通常為金屬製或塑膠製的成形體。環形框50例如呈大致圓環狀，於環形框50的外周的一部分形成 有引導用的平坦切口部(未圖示)。環形框50於中央部具有開口50a。環形框50的開口50a的內徑尺寸(直徑)當然略大於被切割的半導體晶圓60的晶圓直徑，且將其調整為黏著層30的開口30a的直徑以上。再者，環形框50的形狀並不限定於圓環狀，可使用自先前以來所使用的各種形狀(例如矩形環狀)。
環形框50是以開口50a與開口30a形成同心的方式配置於黏著層30上。環形框50是不與黏晶膜40的與黏著層30的重疊部分(外周部分40a)重疊而配置。
半導體晶圓60是不與黏著層30及黏晶膜40的外周部分40a重疊，而配置於黏晶膜40的中央部分40b。於半導體晶圓60上，經過所需的前處理而形成有電路。於切割步驟中，按每個電路將半導體晶圓60單片化，從而獲得半導體晶片。
半導體裝置製造用黏著片1是用於切割加工及黏晶加工。於半導體裝置製造用黏著片1中，藉由該片材具備不同於黏著層20之黏著層30，可個別地調整黏著層20的黏著力與黏著層30的黏著力。藉此，能夠以於拾取步驟中黏晶膜40及切割片的黏著層20之間的剝離變得容易的方式調整黏著層20的黏著力，並以於切割步驟中環形框50不自黏著層30剝離的方式調整黏著層30的黏著力。進而，於半導體裝置製造用黏著片1中，黏晶膜40的外周部分40a與黏著層30接觸，藉此外周部分40a黏著於黏著力得到調整的黏著層30上。藉此，於切割步驟中黏晶膜40的 外周部分40a成為剝離起點且黏晶膜40剝離的情況得到抑制，因此可抑制晶片的飛散。進而，於半導體裝置製造用黏著片1中，黏晶膜40的外周部分40a與黏著層30重疊，藉此於切割步驟中黏晶膜40剝離的情況進一步得到抑制，因此可進一步抑制晶片的飛散。
其次，對使用半導體裝置製造用黏著片1的半導體裝置的製造方法進行說明。圖4是表示利用切割刀片切割半導體晶圓的步驟的示意剖面圖。圖5是表示拾取經單片化的帶有黏晶膜的半導體晶片的步驟的示意剖面圖。圖6是表示使用經拾取的帶有黏晶膜的半導體晶片的半導體裝置的示意剖面圖。
於半導體裝置製造用黏著片1上積層有半導體晶圓60的積層體可使用積層有黏晶膜40與基材層的黏著膜、以及將黏晶膜40與黏著層(黏著層20及黏著層30)及基材層以該順序積層而成的黏著膜的任一者而獲得。
當使用積層有黏晶膜40與基材層的黏著膜時，例如可使用以下的(1)、(2)所示的任一種方法。
(1)首先，使黏著膜的黏晶膜40與半導體晶圓60貼合。其次，剝離黏著膜的基材層，使黏晶膜40與積層有黏著層(黏著層20及黏著層30)及基材層的切割膠帶的黏著層貼合。
(2)首先，使黏著膜的黏晶膜40與積層有黏著層(黏著層20及黏著層30)及基材層的切割膠帶的黏著層貼合。其次，剝離黏著膜的基材層，使黏晶膜40與半導體晶圓 60貼合。
當使用將黏晶膜40與黏著層及基材層以該順序積層而成的黏著膜時，使黏著膜的黏晶膜40與半導體晶圓60貼合，藉此可獲得於半導體裝置製造用黏著片1上積層有半導體晶圓60的積層體。
再者，於上述任一種方法中，黏著層(黏著層20及黏著層30)與黏晶膜40是以使黏晶膜40的外周部分40a的至少一部分與黏著層30接觸的方式積層，較佳為以使黏晶膜40的外周部分40a的至少一部分與黏著層30重疊的方式積層。另外，半導體晶圓60是以不與黏著層30或黏晶膜40的外周部分40a重疊的方式配置。
於藉由上述任一種方法而獲得在半導體裝置製造用黏著片1上積層有半導體晶圓60的積層體後，將環形框50配置於半導體裝置製造用黏著片1的黏著層30上。
其次，如圖4所示，利用切斷裝置(切片機)的旋轉刀70切斷上述積層體，獲得黏晶膜45黏著於半導體晶片65而成的所期望的大小的帶有黏著膜的半導體晶片80。於切割步驟中，可使用完全切斷黏著膜的全切法，亦可使用不完全切斷黏著膜而殘留一部分的方法(半切法)。
切斷半導體晶圓60時所使用的切片機或旋轉刀(刀片)可使用一般所市售者。作為切片機，例如可使用DISCO股份有限公司製造的全自動切割機6000系列或半自動切割機3000系列等。作為刀片，例如可使用DISCO股份有限公司製造的切割刀片NBC-ZH05系列或NBC-ZH系列 等。
另外，於切斷半導體裝置製造用黏著片1與半導體晶圓60的積層物的步驟中，不僅可使用例如DISCO股份有限公司製造的全自動切割機6000系列等的旋轉刀，而且亦可使用例如DISCO股份有限公司製造的全自動雷射切割機7000系列等的雷射。
於切割步驟後，如圖5所示，在黏著層20與黏晶膜45的界面進行剝離，並拾取帶有黏著膜的半導體晶片80。然後，如圖6所示，將所拾取的帶有黏著膜的半導體晶片80安裝於支撐基材85上。
其後，使帶有黏著膜的半導體晶片80的半導體晶片65經由線90而與支撐基材85上的外部接續端子(未圖示)連接。然後，藉由密封樹脂層95來密封包含半導體晶片65的積層體，從而獲得圖6所示的半導體裝置100。
再者，本發明並不限定於上述實施形態。例如，黏著層30並不限定於圓環狀，亦可為矩形環狀。於此情況下，通常使用具有矩形環狀的環形框，並使用矩形狀的黏晶膜。另外，黏著層30並不限定於在黏著層20上配置有多個，只要對應於半導體裝置100的製造個數而在黏著層20上至少配置一個即可。
實例1
以下，藉由實例來詳細地說明本發明，但本發明並不受該些實例限制。
1.黏晶膜的製作
於具備溫度計、攪拌機及氯化鈣管的500ml的四口燒瓶中，取醚二胺2000(BASF公司製造)(0.02莫耳)、1,12-二胺基十二烷(0.08莫耳)及N-甲基-2-吡咯啶酮150g，在60℃下進行攪拌來使二胺溶解。於使二胺溶解後，一點點地添加2,2-雙[4-(3,4-二羧基苯氧基)苯基]丙烷二酐(0.1莫耳)。於60℃下反應1小時後，一面吹入N2 氣體一面於170℃下進行加熱，將水與溶劑的一部分共沸去除。獲得該反應液作為聚醯亞胺樹脂的N-甲基-2-吡咯啶酮(N-Methyl-2-Pyrrolidone，NMP)溶液。
向上述所獲得的聚醯亞胺樹脂的NMP溶液(含有100質量份的聚醯亞胺樹脂)中添加甲酚酚醛清漆型環氧樹脂(東都化成製造)4質量份、4,4’-[1-[4-[1-(4-羥基苯基)-1-甲基乙基]苯基]次乙基]雙酚(本州化學製造)2質量份、四苯基硼酸四苯基磷(東京化成製造)0.5質量份。進而，以相對於固體成分的總質量達到25質量%的方式添加氮化硼填料(水島合金鐵(Mizushima Ferroalloy)製造)，並以相對於固體成分的總質量達到3質量%的方式添加Aerosil Filler R972(日本Aerosil製造)，然後充分地混練而獲得清漆。將所調配的清漆塗佈於已完成剝離處理的聚對苯二甲酸乙二酯膜上，於80℃下加熱30分鐘，繼而於120℃下加熱30分鐘。其後，於室溫(25℃)下剝離聚對苯二甲酸乙二酯膜，獲得厚度為25μm的黏著膜作為黏晶膜。
2.切割膠帶的製作 (1)強黏著層
藉由溶液聚合法而獲得使用丙烯酸丁酯與丙烯酸乙酯、丙烯腈作為主單體，並使用丙烯酸羥基乙酯作為官能基單體的丙烯酸共聚物作為黏著劑。該經合成的丙烯酸共聚物的重量平均分子量為70萬，玻璃轉移點為-30℃。製備對該丙烯酸共聚物100質量份調配了多官能異氰酸酯交聯劑(NIPPON POLYURETHANE INDUSTRY股份有限公司製造)2.2質量份而成的黏著劑溶液。於塗佈有聚矽氧系脫模劑的雙軸延伸聚酯膜分隔片(厚度為25μm)上，以使乾燥時的黏著劑厚度達到20μm的方式塗佈黏著劑溶液。繼而，將黏著劑溶液於80℃下乾燥30分鐘後，將塗佈有聚矽氧系脫模劑的其他雙軸延伸聚酯膜分隔片(厚度為25μm)層壓於黏著劑面上。
(2)弱黏著層與基材的積層體
藉由溶液聚合法而獲得使用丙烯酸2-乙基己酯與甲基丙烯酸甲酯作為主單體，並使用甲基丙烯酸羥基乙酯與丙烯酸作為官能基單體的丙烯酸共聚物作為黏著劑。該經合成的丙烯酸共聚物的重量平均分子量為40萬，玻璃轉移點為-38℃。製備對該丙烯酸共聚物100質量份調配了多官能異氰酸酯交聯劑(三菱化學股份有限公司製造)15質量份而成的黏著劑溶液。於塗佈有聚矽氧系脫模劑的雙軸延伸聚酯膜分隔片(厚度為38μm)上，以使乾燥時的黏著劑厚度達到10μm的方式塗佈黏著劑溶液。繼而，將黏著劑溶液於80℃下乾燥30分鐘後，進而將聚烯烴膜(厚度 為100μm)層壓於黏著劑面上。將該多層膜於室溫下放置1週並充分地進行老化後，用於試驗。
(3)強黏著層與基材的積層體
藉由溶液聚合法而獲得使用丙烯酸丁酯與丙烯酸乙酯、丙烯腈作為主單體，並使用丙烯酸羥基乙酯作為官能基單體的丙烯酸共聚物作為黏著劑。該經合成的丙烯酸共聚物的重量平均分子量為70萬，玻璃轉移點為-30℃。製備對該丙烯酸共聚物100質量份調配了多官能異氰酸酯交聯劑(NIPPON POLYURETHANE INDUSTRY股份有限公司製造)2.2質量份而成的黏著劑溶液。於塗佈有聚矽氧系脫模劑的雙軸延伸聚酯膜分隔片(厚度為25μm)上，以使乾燥時的黏著劑厚度達到20μm的方式塗佈黏著劑溶液。繼而，將黏著劑溶液於80℃下乾燥30分鐘後，進而將聚烯烴膜(厚度為100μm)層壓於黏著劑面上。將該多層膜於室溫下放置1週並充分地進行老化後，用於試驗。
3.半導體晶圓的積層體的製作 (實例1)
將切成內徑為210mm的圓環狀的上述(1)的強黏著層作為環形框固定用的黏著層貼附在弱黏著層與基材的積層體(切割膠帶)的弱黏著層上。其後，以與強黏著層形成同心的方式貼附圓形加工成直徑220mm的黏晶膜，從而製成半導體裝置製造用黏著片。於60℃的熱板上，使直徑為8吋、厚度為50μm的半導體晶圓與半導體裝置製造用黏著片的黏晶膜貼合，從而獲得半導體晶圓的積層體。
(比較例1)
除未積層強黏著層以外，以與實例1相同的方式獲得半導體晶圓的積層體。
(比較例2)
使用強黏著層與基材的積層體(切割膠帶)來代替弱黏著層與基材的積層體，進而，未積層強黏著層，除此以外，以與實例1相同的方式獲得半導體晶圓的積層體。
(比較例3)
將黏晶膜圓形加工成直徑205mm，且未設置黏晶膜與強黏著層的重疊部分，除此以外，以與實例1相同的方式獲得半導體晶圓的積層體。
(比較例4)
使用強黏著層與基材的積層體(切割膠帶)來代替弱黏著層與基材的積層體，進而，將黏晶膜圓形加工成直徑205mm，且未設置黏晶膜與強黏著層的重疊部分，除此以外，以與實例1相同的方式獲得半導體晶圓的積層體。
於上述實例1及比較例1~比較例4中所製作的樣品中，半導體晶圓的貼合是使用JCM股份有限公司製造的「DM-300-H」於60℃下進行。
4.各種評價 (切割步驟)
使用DISCO股份有限公司製造的全自動切割機「DFD-6361」，切斷上述實例1及比較例1~比較例4中所製作的樣品。於樣品的切斷時，使用具有直徑為250mm 的開口的圓環狀的環形框。於樣品的切斷時，採用藉由1片刀片來完成加工的單切方式，並使用DISCO股份有限公司製造的切割刀片「NBC-ZH 104F-SE 27HDBB」作為刀片。樣品的切斷是於刀片轉速為45,000rpm，切斷速度為50mm/s的條件下進行。切斷時的刀片高度是設定為切入切割基材20μm的刀片高度(80μm)。切斷半導體晶圓的尺寸是設定為10mm×10mm。
將於切割步驟中環形框與黏著層間剝離的情況、或者於切割步驟中產生了黏晶膜的剝離或半導體晶片飛散的情況分別判定為不良(B)，將未產生上述不良情況者判定為良好(A)。
(拾取步驟)
使用Renesas Eastern Japan Semiconductor公司製造的可撓性黏晶機(flexible die bonder)「DB-730」對藉由上述方法而單片化的晶片的拾取性進行評價。拾取用夾頭使用Micro Mechanics公司製造的「RUBBER TIP 13-087E-33(尺寸：10mm×10mm)」，頂針使用Micro Mechanics公司製造的「EJECTOR NEEDLE SEN2-83-05(直徑：0.7mm，前端形狀：直徑為350μm的半圓)」。頂針是以4.2mm的針中心間隔而配置有9根。於拾取時的針的上頂速度為10mm/s、上頂高度為1000μm的條件下評價拾取性。連續拾取100個晶片，將不產生晶片破損、拾取失誤等的情況判定為良好(A)，將即便1個晶片產生了晶片破損或拾取失誤等的情況判定為不良(B)。
將上述實例1及比較例1~比較例4中所製作的樣品、以及切割步驟及拾取步驟中的各種評價的結果示於表1。
比較例1~比較例4不存在黏晶膜與環形框固定用強黏著層的接觸部分或重疊部分。
比較例1因黏著層的環形框配置部分與環形框的密接力弱，於切割步驟中黏著層自環形框剝離，且於切割步驟中產生黏晶膜剝離，故不佳。比較例2因切割膠帶與黏晶膜的密接力高，於拾取步驟中產生晶片破損或拾取失誤，故不佳。比較例3由於不存在強黏著層與黏晶膜的接觸部分或重疊部分，因此於切割步驟中產生黏晶膜剝離，故不佳。比較例4因切割膠帶與黏晶膜的密接力高，於拾取步驟中產生晶片破損或拾取失誤，故不佳。
根據以上結果，確認於製造半導體裝置時，藉由使用本發明的半導體裝置製造用黏著片，可維持拾取步驟中的黏晶膜及切割片間的剝離容易性，並可抑制切割步驟中的環形框的剝離及晶片的飛散。於本發明中，可容易地拾取 帶有黏晶膜的半導體晶片，藉此可提昇半導體裝置的良率。
而且，上述半導體裝置製造用黏著片1除了維持拾取步驟中的黏晶膜及切割片間的剝離容易性、及抑制切割步驟中的環形框的剝離及晶片的飛散的效果以外，亦有助於解決捲成輥狀時的黏晶膜的捲痕的問題。以下，對該點進行說明。
先前，實施了預切割加工的黏著片200例如圖7所示般，於基材膜201上積層有圓形的黏晶膜202，進而，以覆蓋黏晶膜202的方式積層有圓形的黏著層203。
當將此種黏著片200例如圖8所示般捲繞於圓筒狀的捲芯211上而形成輥狀時，黏晶膜202與黏著層203的重疊部分的厚度比黏著片200的其他部分的厚度更厚，因此存在捲繞時的張力過度地施加於黏晶膜202上的情況。因此，如圖9所示，存在捲痕212轉印至黏晶膜202的中央部分，導致黏晶膜202的平滑性受損的情況。黏晶膜202的厚度越增加，越容易產生捲痕212，若產生捲痕212，則存在將黏著片200貼附於半導體晶圓時空氣進入至半導體晶圓與黏晶膜202之間，導致半導體裝置的製造過程中產生不良情況的可能性。
再者，作為先前的黏著片，如圖10所示，亦包括於經預切割加工的黏晶膜302及黏著膜303的外側亦形成有黏著膜303的黏著片300，但與黏著片200同様地，可能產生捲繞成輥狀時的捲痕的問題。
相對於此，於上述黏著片1中，如圖2所示，黏晶膜 40的外周部分40a的至少一部分與黏著層30重疊，對應於外周部分40a的黏著片1的厚度比對應於中央部分40b的黏著片1的厚度更厚。藉此，當將黏著片1捲成輥狀時，受到黏晶膜40與黏著層30的重疊部分保護，施加於黏晶膜的中央部分40b的捲繞時的張力得到緩和，可抑制捲痕轉印至黏晶膜40上。
另外，若就抑制捲痕的轉印的觀點而言，則亦可如圖11所示的黏著片2般，黏著層30的內周的至少一部分與黏晶膜40重疊。於此情況下，對應於外周部分40a的黏著片2的厚度亦比對應於中央部分40b的黏著片2的厚度更厚。因此，與黏著片1同様地，可抑制捲痕轉印至黏晶膜40上。
以下，對本發明的黏著片的捲痕轉印抑制性的評價試驗加以描述。
(實例1)
將以70mm的間隔連續地切成內徑為210mm的圓環狀的上述(1)的強黏著層作為環形框固定用的黏著層貼附在弱黏著層與基材的積層體(切割膠帶)的弱黏著層上。其後，以與強黏著層形成同心的方式連續地貼附圓形加工成直徑220mm的黏晶膜。然後，針對切割膠帶與強黏著層的積層部分，一面以使對於基材的切入深度變成10μm以下的方式進行調節，一面與黏晶膜成同心圓狀地進行φ 290mm的圓形預切割加工，並且以使切割膠帶與強黏著層的積層部分殘留於基材的寬度方向的兩端部的方式進 行加工，從而獲得半導體裝置製造用黏著片。
(實例2)
除將黏晶膜的直徑圓形加工成211mm以外，以與實例1相同的方式獲得半導體裝置製造用黏著片。
(比較例1)
除將黏晶膜的直徑圓形加工成205mm以外，以與實例1相同的方式獲得半導體裝置製造用黏著片。
(比較例2)
在弱黏著層與基材的積層體(切割膠帶)的弱黏著層上，以60mm的間隔連續地貼附圓形加工成直徑220mm的黏晶膜。然後，針對切割膠帶與弱黏著層的積層部分，一面以使對於基材的切入深度變成10μm以下的方式進行調節，一面與黏晶膜成同心圓狀地進行φ 290mm的圓形預切割加工，並且以使切割膠帶殘留於基材的寬度方向的兩端部的方式進行加工，從而獲得半導體裝置製造用黏著片。
(比較例3)
除將黏晶膜的厚度設定為60μm以外，以與比較例2相同的方式獲得半導體裝置製造用黏著片。
(片材輥的製作)
將實例及比較例的黏著片以100片份圓形的黏晶膜的長度捲繞成輥狀，從而獲得片材輥。將捲繞張力設定為1kg或3kg。繼而，將所獲得的片材輥於冷藏庫內(5℃)保存2週，其後，對自冷藏庫所取出的片材輥的第50片的黏 晶膜觀察捲痕的有無。評價基準如下。
○：即便自所有角度進行觀察，亦未確認到捲痕
△：即便自膜上面進行觀察，亦未確認到捲痕，但若改變膜的角度進行觀察，則確認到捲痕
×：若自膜上面進行觀察，則確認到捲痕
將評價結果示於表2。於黏晶膜的外周與黏著層重疊的實例1、實例2中，不論捲繞張力均未確認到捲痕。另一方面，於黏晶膜的外周與黏著層不重疊的比較例1~比較例3中，確認到捲痕，且確認於捲繞張力大的情況下更顯著地產生捲痕。另外，以目視評價將實例及比較例的黏著片貼附於半導體晶圓時有無產生空隙。其結果，確認空隙的產生情況對應於捲痕的產生情況而增加。
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
1、2‧‧‧半導體裝置製造用黏著片
10‧‧‧基材膜
20‧‧‧黏著層(第1黏著層)
25‧‧‧自開口露出的部分
30‧‧‧黏著層(第2黏著層)
30a‧‧‧開口
32‧‧‧黏著層
40、45‧‧‧黏晶膜
40a‧‧‧外周部分
40b‧‧‧中央部分
50‧‧‧環形框
50a‧‧‧開口
60‧‧‧半導體晶圓
65‧‧‧半導體晶片
70‧‧‧旋轉刀
80‧‧‧半導體晶片
85‧‧‧支撐基材
90‧‧‧線
95‧‧‧密封樹脂層
100‧‧‧半導體裝置
200‧‧‧黏著片
201‧‧‧基材膜
202‧‧‧黏晶膜
203‧‧‧黏著層
211‧‧‧捲芯
212‧‧‧捲痕
300‧‧‧黏著片
302‧‧‧黏晶膜
303‧‧‧黏著膜
X-X、Y-Y、Z-Z‧‧‧線
圖1是表示黏著片的一實施形態的平面圖。
圖2是沿著圖1的II-II線的示意剖面圖。
圖3是表示黏著片上貼附有半導體晶圓及環形框的積層物的示意剖面圖。
圖4是表示利用切割刀片切割半導體晶圓的步驟的示意剖面圖。
圖5是表示拾取經單片化的帶有黏晶膜的半導體晶片的步驟的示意剖面圖。
圖6是表示使用經拾取的帶有黏晶膜的半導體晶片的半導體裝置的示意剖面圖。
圖7(a)是表示先前的黏著片的一例的平面圖，圖7(b)是圖7(a)的X-X線剖面圖。
圖8是表示圖7(a)及圖7(b)所示的黏著片的輥體的立體圖。
圖9(a)是表示圖7(a)及圖7(b)所示的黏著片上的捲痕的様子的平面圖，圖9(b)是圖9(a)的Y-Y線剖面圖。
圖10(a)是表示先前的黏著片的其他例的平面圖，圖10(b)是圖10(a)的Z-Z線剖面圖。
圖11是表示黏著片的變形例的示意剖面圖。
10‧‧‧基材膜
20‧‧‧黏著層(第1黏著層)
25‧‧‧自開口露出的部分
30‧‧‧黏著層(第2黏著層)
30a‧‧‧開口
40‧‧‧黏晶膜
50‧‧‧環形框
50a‧‧‧開口
60‧‧‧半導體晶圓

Claims (5)

  1. 一種黏著片，其包括：基材；第1黏著層，配置於上述基材上；第2黏著層，配置於上述第1黏著層上，並且具有露出上述第1黏著層的開口；以及黏晶膜，配置於上述第1黏著層的自上述開口露出的部分，其中上述黏晶膜的外周的至少一部分與上述第2黏著層接觸。
  2. 如申請專利範圍第1項所述之黏著片，其中上述黏晶膜的外周的至少一部分與上述第2黏著層重疊。
  3. 如申請專利範圍第1項所述之黏著片，其中上述第2黏著層的內周的至少一部分與上述黏晶膜重疊。
  4. 如申請專利範圍第2項所述之黏著片，其中上述黏晶膜與上述第2黏著層的重疊部分的寬度為0.1mm~25mm。
  5. 如申請專利範圍第1項至第4項中任一項所述之黏著片，其用於切割加工及黏晶加工。
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CN103305142B (zh) * 2012-03-07 2016-01-20 古河电气工业株式会社 粘接带
JP5950838B2 (ja) * 2012-03-07 2016-07-13 古河電気工業株式会社 粘着テープ
KR20140142026A (ko) * 2013-06-03 2014-12-11 삼성디스플레이 주식회사 기판 합착용 하부 필름, 기판 밀봉체 및 이들을 이용한 유기 발광 표시 장치의 제조 방법
CN110041836B (zh) * 2013-09-30 2021-09-21 琳得科株式会社 树脂膜形成用复合片
US20160326403A1 (en) * 2014-01-08 2016-11-10 Lintec Corporation Composite Sheet For Protective-Film Formation
JP6439054B2 (ja) * 2015-09-02 2018-12-19 株式会社アルバック ワーク保持体および成膜装置
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TW200933723A (en) * 2007-12-17 2009-08-01 Denki Kagaku Kogyo Kk Dicing sheet, manufacturing process thereof and process for manufacturing electronic element

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JP5196034B2 (ja) 2013-05-15
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CN102959688B (zh) 2016-04-06
TW201200576A (en) 2012-01-01
WO2011158835A1 (ja) 2011-12-22
JPWO2011158835A1 (ja) 2013-08-19
KR20120134155A (ko) 2012-12-11

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