TWI458012B - Substrate processing apparatus - Google Patents
Substrate processing apparatus Download PDFInfo
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- TWI458012B TWI458012B TW099146968A TW99146968A TWI458012B TW I458012 B TWI458012 B TW I458012B TW 099146968 A TW099146968 A TW 099146968A TW 99146968 A TW99146968 A TW 99146968A TW I458012 B TWI458012 B TW I458012B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Description
本發明大體上關於在腔室中產生電漿的基材處理設備，其中電漿是用來處理基材的表面。The present invention generally relates to a substrate processing apparatus for producing a plasma in a chamber in which the plasma is used to treat the surface of the substrate.
如本領域中具有通常知識者所知，製造諸如大型積體(large scale integrated；LSI)電路或平板顯示器(flat panel display；FPD)的電子裝置通常需要經過處理，諸如基材之真空處理。As is known to those of ordinary skill in the art, the fabrication of electronic devices such as large scale integrated (LSI) circuits or flat panel displays (FPDs) typically requires processing, such as vacuum processing of substrates.
在真空處理方法中，供應氣體至腔室中，並藉由高壓放電產生電漿。電漿粒子的加速力實體上將物質濺射至基材上。基材上的物質藉由電漿的自由基而化學分解。In the vacuum processing method, gas is supplied into the chamber, and plasma is generated by high voltage discharge. The accelerating force of the plasma particles physically sputters the material onto the substrate. The material on the substrate is chemically decomposed by the free radicals of the plasma.
使用電漿的基材處理設備依據產生電漿的方法可分為電容耦合電漿(capacitively coupled plasma；CCP)設備以及感應耦合電漿(inductively coupled plasma；ICP)設備。A substrate processing apparatus using plasma can be classified into a capacitively coupled plasma (CCP) device and an inductively coupled plasma (ICP) device according to a method of generating a plasma.
CCP方法包括施加RF功率至面向彼此的平行平坦電極，並使用在兩個電極之間垂直形成的RF電場形成電漿。ICP方法包括使用RF天線引發之感應電場將原料改變成電漿。The CCP method involves applying RF power to parallel flat electrodes facing each other and forming a plasma using an RF electric field formed vertically between the two electrodes. The ICP method involves changing the feedstock to a plasma using an induced electric field induced by an RF antenna.
一般而言，使用ICP方法的基材處理設備包括設置在腔室之下部分的下電極。將基材放置於下電極上。該設備進一步包括天線，其提供於腔室上或耦接至腔室殼體的蓋體構架上。施加RF功率至天線。藉由供應反應氣體至腔室中以在腔室產生電漿的方式來處理基材表面。In general, a substrate processing apparatus using the ICP method includes a lower electrode disposed at a portion below the chamber. The substrate is placed on the lower electrode. The apparatus further includes an antenna provided on the chamber or coupled to the cover frame of the chamber housing. Apply RF power to the antenna. The surface of the substrate is treated by supplying a reactive gas into the chamber to create a plasma in the chamber.
在使用ICP方法的基材處理設備中，天線大大地影響電漿的生成以及製程的效能。因此，已提出各種天線，例如螺旋RF天線、平行RF天線等。再者，已進行許多研究來控制天線之間的距離，或改變介電板的厚度或形狀以使電漿的密度均勻。In substrate processing equipment using the ICP method, the antenna greatly affects the generation of plasma and the efficiency of the process. Therefore, various antennas have been proposed, such as a spiral RF antenna, a parallel RF antenna, and the like. Furthermore, many studies have been conducted to control the distance between the antennas or to change the thickness or shape of the dielectric plates to make the density of the plasma uniform.
然而，在習知技術中，因為天線之間的距離必須受到控制，或者介電板的厚度或結構必須被改變，以在腔室中均勻地產生電漿，導致設備的結構複雜並使製程效能的改良受到限制。However, in the prior art, because the distance between the antennas must be controlled, or the thickness or structure of the dielectric plate must be changed to uniformly generate plasma in the chamber, the structure of the device is complicated and the process efficiency is The improvement is limited.
應了解，前述的習知技術為本案發明人在推導本發明之前便已知的資訊，或為在推導本發明之期間所獲得的資訊，且應了解實際上並未暗示習知技術的結構在申請日前便為已知。It will be appreciated that the foregoing prior art is the information known to the inventor prior to the derivation of the invention, or the information obtained during the derivation of the invention, and it should be understood that the structure of the prior art is not It is known before the application date.
因此，本發明在謹記著上述發生在先前技術中的問題下而完成，且本發明之一目的便是提供其中具有天線平行設置在腔室外側及內側的基材處理設備，使得電漿密度均勻位在腔室中，因而增進了處理效能。Accordingly, the present invention has been accomplished in consideration of the above-mentioned problems occurring in the prior art, and it is an object of the present invention to provide a substrate processing apparatus in which antennas are disposed in parallel on the outside and inside of the chamber so that the plasma density It is evenly positioned in the chamber, thus improving processing efficiency.
為了達成上述目的，在一態樣中，本發明提供一種基材處理設備，其包括：腔室，在其中處理基材的表面；第一天線，提供在腔室的外側，腔室中有視窗，其設置於腔室與第一天線之間；以及第二天線，提供在腔室的內側，第二天線圍繞著第一天線提供於其中的部分。In order to achieve the above object, in one aspect, the present invention provides a substrate processing apparatus comprising: a chamber in which a surface of a substrate is processed; a first antenna provided on an outer side of the chamber, in the chamber a window disposed between the chamber and the first antenna; and a second antenna provided on an inner side of the chamber, the second antenna surrounding a portion of the first antenna provided therein.
第一天線可位在腔室之上部分的中央部分上，且第二天線可位在腔室之上部分的周緣，並圍繞第一天線提供於其中的部分。The first antenna may be located on a central portion of the upper portion of the chamber, and the second antenna may be located at a periphery of the upper portion of the chamber and surrounding a portion of the first antenna provided therein.
可在安裝於該腔室中的介電層內提供第二天線。A second antenna can be provided within the dielectric layer mounted in the chamber.
介電層可藉由在彼此之上堆疊複數個具有不同材料的層所形成。該等層可堆疊在彼此之上，使得其介電常數隨著從其中含有第二天線的層至最外層而增加。介電層可從腔室內側朝向腔室外側依序包含模鑄層及陶瓷層。The dielectric layer can be formed by stacking a plurality of layers having different materials on each other. The layers can be stacked on top of one another such that their dielectric constant increases with the layer from the second antenna to the outermost layer. The dielectric layer may sequentially include a mold layer and a ceramic layer from the inside of the chamber toward the outside of the chamber.
再者，可在連接至第二天線的RF供應線路，或用於接地第二天線的接地線路中之至少一者上提供電容器。Furthermore, a capacitor can be provided on at least one of an RF supply line connected to the second antenna or a ground line for grounding the second antenna.
在另一態樣中，本發明提供一種基材處理設備，包括：腔室殼體；蓋體構架，其耦接至腔室殼體的上端，使得腔室可藉由腔室殼體及蓋體構架所界定，且第一安裝部分形成在蓋體構架之上部分的中央部分中，第一安裝部分具有一開放的孔形狀(holed shape)；第一天線，布置於蓋體構架的第一安裝部分中；視窗，提供在蓋體構架的第一安裝部分中，視窗將第一天線與腔室的內側隔開，使得第一天線位於腔室的外側；以及第二天線，提供在蓋體構架的內側，並圍繞第一安裝部分。In another aspect, the present invention provides a substrate processing apparatus comprising: a chamber housing; a cover frame coupled to an upper end of the chamber housing such that the chamber can be closed by the chamber housing and the cover The body frame is defined, and the first mounting portion is formed in a central portion of the upper portion of the cover frame, the first mounting portion has an open holed shape; the first antenna is disposed on the cover frame a mounting portion; a window provided in the first mounting portion of the cover frame, the window separating the first antenna from the inner side of the chamber such that the first antenna is located outside the chamber; and the second antenna, Provided on the inside of the cover frame and surrounding the first mounting portion.
蓋體構架可具有第二安裝部分，其圍繞第一安裝部分而形成，使得第二天線安裝在第二安裝部分中。第二安裝部分可具有凹陷形狀。The cover frame may have a second mounting portion formed around the first mounting portion such that the second antenna is mounted in the second mounting portion. The second mounting portion may have a concave shape.
此外，可於蓋體構架中提供隔板構件。隔板構件可將第一安裝部分與第二安裝部分隔開。Additionally, a baffle member can be provided in the cover frame. The spacer member may separate the first mounting portion from the second mounting portion.
較佳地，可設置在蓋體構架的上部分中提供套座，套座從腔室的外側連接至第二天線，且可將連接器連接至套座。Preferably, a socket may be provided in the upper portion of the cover frame, the socket being coupled from the outside of the chamber to the second antenna, and the connector being connectable to the socket.
再者，可在第二安裝部分中提供介電層，且第二天線可安裝在介電層中。Furthermore, a dielectric layer can be provided in the second mounting portion and the second antenna can be mounted in the dielectric layer.
此外，可以環狀布置方式於第一安裝部分與第二安裝部分之間提供噴淋頭。噴淋頭可將製程氣體注射至腔室中。Further, a shower head may be provided between the first mounting portion and the second mounting portion in an annular arrangement. The sprinkler can inject process gas into the chamber.
噴淋頭具有向下注射孔以及水平注射孔，水平注射孔經定向而朝向蓋體構架的中央部分。The showerhead has a downward injection aperture and a horizontal injection aperture that is oriented toward a central portion of the cover frame.
另外，製程氣體供應單元可耦接至第一安裝部分的中央部分，且可在蓋體構架上提供噴淋頭，使得製程氣體被注射至第一安裝部分與第二安裝部分之下表面的整個區域上。In addition, the process gas supply unit may be coupled to the central portion of the first mounting portion, and a shower head may be provided on the cover frame such that the process gas is injected to the entire lower surface of the first mounting portion and the second mounting portion On the area.
本發明之上述關鍵技術方案可從下文的詳細描述以及隨附圖式而變得更加清楚，並可根據本發明提出及解釋其他各種技術方案。The above-mentioned key technical solutions of the present invention can be more clearly understood from the following detailed description and the accompanying drawings, and various other technical solutions are proposed and explained according to the present invention.
此後，將參照隨附圖式詳細地描述本發明的較佳實施例。Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
現將參照圖式，其中在不同圖式中使用的相同參考元件符號代表相同或相似的部件。Reference will be made to the drawings, in which the same reference
第1至3圖為根據本發明第一實施例之具有天線布置結構之基材處理設備的視圖。第2圖為蓋體構架的截面圖，其繪示天線布置結構。第3圖為繪示天線布置結構的平面圖。1 to 3 are views of a substrate processing apparatus having an antenna arrangement structure according to a first embodiment of the present invention. Figure 2 is a cross-sectional view of the cover frame showing the antenna arrangement. Fig. 3 is a plan view showing the arrangement of the antenna.
如第1圖所示，根據本發明的基材處理設備包括腔室殼體11、基材支撐台15、下電極17、蓋體構架20、視窗30、介電層35、複數個天線41及45、RF功率供應器50以及製程氣體供應單元60及63。在腔室殼體11中提供基材支撐台15及下電極17，並將基材S放置於基材支撐台15及下電極17上。蓋體構架20耦接至腔室殼體11的上端。視窗30及介電層35提供於蓋體構架20中。天線41及45分別位於蓋體構架20的外側與內側。製程氣體供應單元60及63將製程氣體供應至藉由腔室殼體11及蓋體構架20所界定的腔室10中。As shown in FIG. 1, a substrate processing apparatus according to the present invention includes a chamber housing 11, a substrate support table 15, a lower electrode 17, a cover frame 20, a window 30, a dielectric layer 35, a plurality of antennas 41, and 45. RF power supply 50 and process gas supply units 60 and 63. The substrate supporting table 15 and the lower electrode 17 are provided in the chamber casing 11, and the substrate S is placed on the substrate supporting table 15 and the lower electrode 17. The cover frame 20 is coupled to the upper end of the chamber housing 11. Window 30 and dielectric layer 35 are provided in cover frame 20. The antennas 41 and 45 are located on the outer side and the inner side of the cover frame 20, respectively. The process gas supply units 60 and 63 supply process gases to the chamber 10 defined by the chamber housing 11 and the cover frame 20.
可藉由習知技術體現腔室殼體11、基材支撐台15及下電極17，並因而將省略對這些部件的詳細描述。下文將主要詳細解釋蓋體構架20(本發明的關鍵部分)，及在蓋體構架20中所提供之天線41及45的布置結構。The chamber casing 11, the substrate support table 15, and the lower electrode 17 can be embodied by a conventional technique, and thus detailed description of these components will be omitted. The cover frame 20 (a key part of the present invention) and the arrangement of the antennas 41 and 45 provided in the cover frame 20 will be mainly explained in detail below.
蓋體構架20耦接至腔室殼體11的開放上端。在腔室10的中央部分已經被分隔成上腔室與下腔室的例子中，蓋體構架20耦接至上腔室。可使用蓋體構架20的結構輕易地體現上腔室，因此將主要解釋蓋體構架20的結構。The cover frame 20 is coupled to the open upper end of the chamber housing 11. In the example where the central portion of the chamber 10 has been divided into an upper chamber and a lower chamber, the cover frame 20 is coupled to the upper chamber. The upper chamber can be easily embodied using the structure of the cover frame 20, and thus the structure of the cover frame 20 will be mainly explained.
蓋體構架20經配置使得兩組天線之一位於腔室10的外側(換言之，在大氣中)，且另一組位於腔室10的內側(處於真空)。於後文中，在兩組天線之中，位於腔室10外側的天線指的是第一天線41，且位於腔室10內側的天線指的是第二天線45。The cover frame 20 is configured such that one of the two sets of antennas is located outside the chamber 10 (in other words, in the atmosphere) and the other set is located inside the chamber 10 (in vacuum). Hereinafter, among the two sets of antennas, the antenna located outside the chamber 10 refers to the first antenna 41, and the antenna located inside the chamber 10 refers to the second antenna 45.
第一天線41位於蓋體構架20的中央部分，其為腔室10的***部分。第二天線45位於蓋體構架20的周緣，並位於第一天線45的外側及下方。The first antenna 41 is located at a central portion of the cover frame 20, which is an upper central portion of the chamber 10. The second antenna 45 is located on the periphery of the cover frame 20 and is located outside and below the first antenna 45.
為了體現上述的天線布置結構，蓋體構架20大體上具有矩形的平板形狀。此外，參照平面圖，第一安裝部分21位於蓋體構架20的中央部分上，且第二安裝部分25在水平方向上位於第一安裝部分21的外側。In order to embody the antenna arrangement described above, the cover frame 20 generally has a rectangular flat plate shape. Further, referring to the plan view, the first mounting portion 21 is located on the central portion of the cover frame 20, and the second mounting portion 25 is located outside the first mounting portion 21 in the horizontal direction.
第一安裝部分21具有一開放的孔形狀(holed shape)，其形成於蓋體構架20的中央部分之中。較佳地，第一安裝部分21具有矩形的孔形狀，因為腔室10通常是六角形。The first mounting portion 21 has an open holed shape formed in a central portion of the cover frame 20. Preferably, the first mounting portion 21 has a rectangular hole shape because the chamber 10 is generally hexagonal.
第一天線41在水平方向上布置於第一安裝部分21中。在第一天線41的下方提供視窗30。理想的視窗30包含由諸如陶瓷等材料製成的絕緣體31。The first antenna 41 is disposed in the first mounting portion 21 in the horizontal direction. A window 30 is provided below the first antenna 41. The ideal window 30 contains an insulator 31 made of a material such as ceramic.
視窗30將第一天線41自腔室10的內部分隔，使第一天線21位於腔室10的外側，使得感應耦合電漿藉由第一天線41在腔室10中產生。The window 30 separates the first antenna 41 from the interior of the chamber 10 such that the first antenna 21 is located outside of the chamber 10 such that inductively coupled plasma is generated in the chamber 10 by the first antenna 41.
第二安裝部分25形成在蓋體構架20的下表面，其位於腔室10的內側。第二安裝部分25具有凹陷(depressed)的形狀。由於第二安裝部分25係圍繞具有矩形孔形狀之第一安裝部分21而提供，第二安裝部分25較佳包含具有矩形環狀的凹陷。The second mounting portion 25 is formed on the lower surface of the cover frame 20, which is located inside the chamber 10. The second mounting portion 25 has a depressed shape. Since the second mounting portion 25 is provided around the first mounting portion 21 having a rectangular hole shape, the second mounting portion 25 preferably includes a recess having a rectangular ring shape.
第二天線45在水平方向上安裝於第二安裝部分25中。The second antenna 45 is mounted in the second mounting portion 25 in the horizontal direction.
詳言之，介電層35提供於第二安裝部分25中。第二天線45係埋入介電層35並因而固定在第二安裝部分25中。In detail, the dielectric layer 35 is provided in the second mounting portion 25. The second antenna 45 is buried in the dielectric layer 35 and thus fixed in the second mounting portion 25.
介電層35可包含在彼此之上堆疊的數個由不同材料製成的層。較佳地，該等堆疊於彼此之上的層使得其介電常數隨著從其中含有第二天線45的層至最外層(或最上層)而增加。Dielectric layer 35 can comprise a plurality of layers of different materials stacked on top of one another. Preferably, the layers stacked on top of each other are such that their dielectric constant increases with the layer from the second antenna 45 to the outermost layer (or uppermost layer) therein.
介電層35可從腔室10的內側依序包含模鑄層37及陶瓷層39。可在模鑄層37下方設置絕緣層36，且可在陶瓷層39下方設置PTFE層38。理想的模鑄層37為聚矽氧(Si)製成，而絕緣層36以陶瓷製成。可於絕緣層36下方提供由非傳導材料製成的覆蓋膜。The dielectric layer 35 may sequentially include a mold layer 37 and a ceramic layer 39 from the inner side of the chamber 10. An insulating layer 36 may be disposed under the mold layer 37, and a PTFE layer 38 may be disposed under the ceramic layer 39. The ideal molded layer 37 is made of polysilicon (Si) and the insulating layer 36 is made of ceramic. A cover film made of a non-conductive material may be provided under the insulating layer 36.
大致上來說，就各個材料的介電常數(電容率)而言，聚矽氧的範圍從2至2.3，PTFE的範圍從4至6，且陶瓷範圍從9至9.4。In general, for the dielectric constant (permittivity) of each material, polyfluorene oxide ranges from 2 to 2.3, PTFE ranges from 4 to 6, and ceramics ranges from 9 to 9.4.
在此實施例中，供應RF供率至第二天線45的電路是經由第二安裝部分25的頂部連接到蓋體構架20。詳細地說，套座55安裝在蓋體構架20的頂部中。連接器57耦接至套座55，且RF供應線路51連接至連接器57。由於此將電路連接至第二天線45的結構包含將連接器57連接至構架20的頂部，因而有利於檢查及維修，且可顯著的降低當施加功率至第二天線45時可能發生的RF雜訊。In this embodiment, the circuit supplying the RF supply rate to the second antenna 45 is connected to the cover frame 20 via the top of the second mounting portion 25. In detail, the socket 55 is mounted in the top of the cover frame 20. The connector 57 is coupled to the socket 55 and the RF supply line 51 is connected to the connector 57. Since the structure for connecting the circuit to the second antenna 45 includes connecting the connector 57 to the top of the frame 20, it is advantageous for inspection and maintenance, and can significantly reduce the possibility that when power is applied to the second antenna 45, RF noise.
同時，噴淋頭61以矩形布置方式而提供於第一安裝部分21與第二安裝部分25之間。噴淋頭61注射製程氣體至腔室10中。At the same time, the shower head 61 is provided between the first mounting portion 21 and the second mounting portion 25 in a rectangular arrangement. The showerhead 61 injects process gas into the chamber 10.
各個噴淋頭61可具有朝下定向(在垂直方向上)的向下注射孔，以及經定向而朝向腔室10之中央部分(在水平方向上)的水平注射孔。或者各個噴淋頭61可僅具有向下注射孔。Each of the shower heads 61 may have a downward injection hole oriented downward (in the vertical direction) and a horizontal injection hole oriented toward the central portion of the chamber 10 (in the horizontal direction). Or each of the shower heads 61 may have only a downward injection hole.
在第2圖中，元件符號60代表製程氣體供應線路，且元件符號63代表在第一安裝部分21與第二安裝部分25之間形成於蓋體構架20中的供應孔，以便將製程氣體從製程氣體供應線路供應至噴淋頭61。In Fig. 2, the component symbol 60 represents a process gas supply line, and the component symbol 63 represents a supply hole formed in the cover frame 20 between the first mounting portion 21 and the second mounting portion 25 to remove process gas from the process. The process gas supply line is supplied to the shower head 61.
再者，第2圖的元件符號24代表形成在蓋體構架20之周緣中的流動通道，使得加熱流體沿著流動通道流動。Further, the component symbol 24 of Fig. 2 represents a flow passage formed in the periphery of the cover frame 20 such that the heating fluid flows along the flow passage.
第3圖為繪示第一天線41與第二天線45之布置結構的平面圖。第一天線41穿過第一安裝部分21暴露至外側。第二天線45位於蓋體構架20內側。FIG. 3 is a plan view showing an arrangement structure of the first antenna 41 and the second antenna 45. The first antenna 41 is exposed to the outside through the first mounting portion 21. The second antenna 45 is located inside the cover frame 20.
再者，第一天線41或第二天線45可包含複數個彼此組合且大體上以螺旋形式布置的天線。在第3圖所示的實施例中，第一天線41包含兩個天線，且第二天線45包含四個天線，其形成放射狀結構並以逆時鐘方向規則布置。Furthermore, the first antenna 41 or the second antenna 45 may comprise a plurality of antennas that are combined with each other and arranged substantially in a spiral form. In the embodiment shown in Fig. 3, the first antenna 41 comprises two antennas, and the second antenna 45 comprises four antennas which form a radial structure and are regularly arranged in a counterclockwise direction.
除了此天線布置結構之外，也可依需要以各種形狀及組合來布置天線。In addition to this antenna arrangement, the antennas may be arranged in various shapes and combinations as needed.
在具有根據本發明之上述天線布置結構的基材處理設備中，於基材處理操作期間，因為一些天線及其他剩下的天線係個別地平行布置在大氣與真空中，可使用最大的功率量圍繞腔室10之壁及角落均勻地形成電漿。In the substrate processing apparatus having the above-described antenna arrangement according to the present invention, during the substrate processing operation, since some antennas and other remaining antennas are individually arranged in parallel in the atmosphere and vacuum, the maximum amount of power can be used. Plasma is uniformly formed around the walls and corners of the chamber 10.
再者，當兩組天線之間的頻率相變化可根據第一天線41及第二天線45間之安裝位置的差異來控制時，可回應基材處理操作的情況來適當地控制整個製程。因此，可增進處理效率。Furthermore, when the frequency phase change between the two sets of antennas can be controlled according to the difference in the mounting position between the first antenna 41 and the second antenna 45, the entire process can be appropriately controlled in response to the processing operation of the substrate. . Therefore, the processing efficiency can be improved.
第4圖為根據本發明第二實施例之天線布置結構的詳細視圖。Fig. 4 is a detailed view of an antenna arrangement structure according to a second embodiment of the present invention.
根據第二實施例之通用天線布置結構是相似於第一實施例的天線結構。然而，不像第一實施例，隔板構件71從第一安裝部分21的視窗30延伸至圍繞視窗30周圍而設置之蓋體構架20的上部分，使得第一安裝部分21與第二安裝部分25隔開。The general antenna arrangement according to the second embodiment is similar to the antenna structure of the first embodiment. However, unlike the first embodiment, the partition member 71 extends from the window 30 of the first mounting portion 21 to the upper portion of the cover frame 20 disposed around the periphery of the window 30 such that the first mounting portion 21 and the second mounting portion 25 separated.
換言之，不像在第一實施例中以蓋體構架20本身來隔開第一安裝部分21與第二安裝部分25，第二實施例經配置使得第一安裝部分藉由個別隔板構件71與第二安裝部分25分隔。In other words, unlike the first mounting portion 21 and the second mounting portion 25 separated by the cover frame 20 itself in the first embodiment, the second embodiment is configured such that the first mounting portion is separated by the individual spacer members 71 The second mounting portion 25 is separated.
理想地，隔板構件71由絕緣材料製成，特別是如PTFE。Desirably, the spacer member 71 is made of an insulating material, particularly such as PTFE.
隔板構件71在其中央部分具有凹陷結構以形成第一安裝部分21。第二安裝部分25是藉由蓋體構架20以及隔板構件71的周圍部分形成，第二安裝部分25圍繞第一安裝部分21而提供。The spacer member 71 has a recessed structure at a central portion thereof to form the first mounting portion 21. The second mounting portion 25 is formed by the cover frame 20 and the peripheral portion of the spacer member 71, and the second mounting portion 25 is provided around the first mounting portion 21.
在具有隔板構件71與蓋體構架20的第二實施例中，諸如第一天線41、第二天線45、介電層35等的其他部件可以如第一實施例之該等部件的相同方式體現。因此，將省略進一步的解釋以避免重複描述。In a second embodiment having the spacer member 71 and the cover frame 20, other components such as the first antenna 41, the second antenna 45, the dielectric layer 35, etc. may be of the same type as those of the first embodiment The same way. Therefore, further explanation will be omitted to avoid duplicating description.
不像第一實施例，可僅配置一噴淋頭61’，使製程氣體被注射至第一安裝部分21及第二安裝部分25之下表面的整個區域上。在此例中，噴淋頭61’較佳由諸如陶瓷或其類似物的絕緣材料製成。Unlike the first embodiment, only one shower head 61' may be disposed such that the process gas is injected onto the entire area of the lower surface of the first mounting portion 21 and the second mounting portion 25. In this case, the shower head 61' is preferably made of an insulating material such as ceramic or the like.
用於將製程氣體供應至噴淋頭61’的供應線路63’可穿過隔板構件71的中央部分形成。A supply line 63' for supplying a process gas to the shower head 61' may be formed through a central portion of the spacer member 71.
在第4圖中，元件符號75代表設置在隔板構件71與蓋體構架20之間的密封構件，且元件符號80代表將隔板構件71緊固至蓋體構架20之上部分的緊固構架。In FIG. 4, the reference numeral 75 represents a sealing member disposed between the spacer member 71 and the cover frame 20, and the reference numeral 80 represents a fastening for fastening the spacer member 71 to the upper portion of the cover frame 20. Architecture.
第5圖為根據本發明第三實施例之具有天線布置結構之基材處理設備的截面圖。Fig. 5 is a cross-sectional view showing a substrate processing apparatus having an antenna arrangement structure according to a third embodiment of the present invention.
除了具有電容器81及82之外，第三實施例其餘部分的大致構造相同於第一實施例的構造。The rest of the third embodiment has the same configuration as that of the first embodiment except that it has capacitors 81 and 82.
在本發明的第三實施例中，電容器81提供在RF供應線路51的中間(medial)部分上，其中RF供應線路51從RF功率供應器50連接至天線45。再者，電容器82是提供在天線45的接地線路46上。In the third embodiment of the present invention, the capacitor 81 is provided on the medial portion of the RF supply line 51, wherein the RF supply line 51 is connected from the RF power supply 50 to the antenna 45. Again, capacitor 82 is provided on ground line 46 of antenna 45.
各個電容器81、82較佳包含電容可被控制之真空可變電容器(vacuum variable capacitor；VVC)。Each of the capacitors 81, 82 preferably includes a vacuum variable capacitor (VVC) whose capacitance can be controlled.
分別在RF供應線路51以及接地線路46上提供的電容器81與82可控制RF功率，使得當施加RF功率至天線45時可最佳化阻抗匹配，而可適當地形成處理基材所需的電漿。The capacitors 81 and 82 provided on the RF supply line 51 and the ground line 46, respectively, can control the RF power such that impedance matching can be optimized when RF power is applied to the antenna 45, and the power required to process the substrate can be appropriately formed. Pulp.
除了這些部件之外，第三實施例的部件與上述實施例的部件相同，因而使用相同的參考元件符號，且將省略重複的描述。Except for these components, the components of the third embodiment are the same as those of the above-described embodiments, and thus the same reference component symbols are used, and the repeated description will be omitted.
上述之本發明可應用至任何以及所有使用電漿的基材處理設備，例如，乾蝕刻器、化學氣相沉積設備等。The above described invention can be applied to any and all substrate processing equipment using plasma, such as dry etchers, chemical vapor deposition equipment, and the like.
如上所述，根據本發明的基材處理設備具有以下功效。As described above, the substrate processing apparatus according to the present invention has the following effects.
在腔室的外側(大氣)及內側(真空狀態)提供天線。在腔室外側提供的天線位在腔室的中央部分。在腔室內側提供的天線位於鄰近腔室壁處。因此，不僅可在腔室的中央部分也可在鄰近腔室壁的部分中使功率最大化，使得形成在腔室中的電漿密度增加並均勻分布在腔室的整個區域，因而增進處理基材的效率。An antenna is provided on the outside (atmosphere) and inside (vacuum state) of the chamber. The antenna provided on the outside of the chamber is located in the central portion of the chamber. The antenna provided on the inside of the chamber is located adjacent to the chamber wall. Therefore, the power can be maximized not only in the central portion of the chamber but also in the portion adjacent to the chamber wall, so that the density of the plasma formed in the chamber is increased and evenly distributed throughout the entire area of the chamber, thereby enhancing the processing base. Material efficiency.
進一步而言，當在腔室的內側及外側提供之兩組天線的頻率相變化得以控制時，可回應基材處理操作的情況適當地控制整個製程。因此，可增進處理效率。Further, when the frequency phase changes of the two sets of antennas provided on the inner side and the outer side of the chamber are controlled, the entire process can be appropriately controlled in response to the case of the substrate processing operation. Therefore, the processing efficiency can be improved.
另外，在本發明中，在蓋體構架的中央部分中提供單一視窗。因此，即使腔室的尺寸增加，仍可輕易地設計及體現天線及視窗的構造。Further, in the present invention, a single window is provided in the central portion of the cover frame. Therefore, even if the size of the chamber is increased, the configuration of the antenna and the window can be easily designed and embodied.
描述於本發明實施例的技術精神可獨立地實施或可結合。儘管本發明已明確地參照其範例實施例圖示及描述，應了解習知技藝者可在不悖離本發明實施例之精神及範疇的情況下對本發明進行形式及細節的改變。因此，本發明的精神及範疇須由隨附申請專利範圍界定。The technical spirit described in the embodiments of the present invention may be independently implemented or may be combined. While the invention has been described with respect to the embodiments of the embodiments of the embodiments of the present invention, it is understood that the present invention may be modified in form and detail without departing from the spirit and scope of the invention. Accordingly, the spirit and scope of the invention must be defined by the scope of the accompanying claims.
10．．．腔室10. . . Chamber
11．．．腔室殼體11. . . Chamber housing
15．．．基材支撐台15. . . Substrate support table
17．．．下電極17. . . Lower electrode
20．．．蓋體構架20. . . Cover frame
21．．．第一安裝部分twenty one. . . First installation part
24．．．流動通道twenty four. . . Flow channel
25．．．第二安裝部分25. . . Second installation part
30．．．視窗30. . . Windows
31．．．絕緣體31. . . Insulator
35．．．介電層35. . . Dielectric layer
36．．．絕緣層36. . . Insulation
37．．．模鑄層37. . . Molded layer
38．．．PTFE層38. . . PTFE layer
39．．．陶瓷層39. . . Ceramic layer
41．．．天線41. . . antenna
45．．．天線45. . . antenna
46．．．接地線路46. . . Ground line
50．．．RF功率供應器50. . . RF power supply
51．．．RF供應線路51. . . RF supply line
55．．．套座55. . . Socket
57．．．連接器57. . . Connector
60．．．製程氣體供應單元60. . . Process gas supply unit
61、61’．．．噴淋頭61, 61’. . . Sprinkler
63、63’．．．製程氣體供應單元63, 63’. . . Process gas supply unit
71．．．隔板構件71. . . Partition member
80．．．緊固構件80. . . Fastening member
81．．．電容器81. . . Capacitor
82．．．電容器82. . . Capacitor
第1圖為根據本發明第一實施例之具有天線布置結構之基材處理設備的截面圖。Fig. 1 is a cross-sectional view showing a substrate processing apparatus having an antenna arrangement structure according to a first embodiment of the present invention.
第2圖為根據本發明第一實施例之天線布置結構的詳細視圖。Fig. 2 is a detailed view of an antenna arrangement structure according to a first embodiment of the present invention.
第3圖為根據本發明第一實施例之天線布置結構的平面圖。Fig. 3 is a plan view showing an antenna arrangement structure according to a first embodiment of the present invention.
第4圖為根據本發明第二實施例之天線布置結構的詳細視圖。Fig. 4 is a detailed view of an antenna arrangement structure according to a second embodiment of the present invention.
第5圖為根據本發明第三實施例之具有天線布置結構之基材處理設備的截面圖。Fig. 5 is a cross-sectional view showing a substrate processing apparatus having an antenna arrangement structure according to a third embodiment of the present invention.
10．．．腔室10. . . Chamber
11．．．腔室殼體11. . . Chamber housing
15．．．基材支撐台15. . . Substrate support table
17．．．下電極17. . . Lower electrode
20．．．蓋體構架20. . . Cover frame
21．．．第一安裝部分twenty one. . . First installation part
25．．．第二安裝部分25. . . Second installation part
30．．．視窗30. . . Windows
35．．．介電層35. . . Dielectric layer
41．．．天線41. . . antenna
45．．．天線45. . . antenna
50．．．RF功率供應器50. . . RF power supply
60．．．製程氣體供應單元60. . . Process gas supply unit
Claims (14)
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| KR1020100130209A KR101236397B1 (en) | 2009-12-31 | 2010-12-17 | Substrate processing apparatus |
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| TWI458012B true TWI458012B (en) | 2014-10-21 |
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| KR101383291B1 (en) * | 2012-06-20 | 2014-04-10 | 주식회사 유진테크 | Apparatus for processing substrate |
| KR101979224B1 (en) * | 2017-12-26 | 2019-05-17 | 인베니아 주식회사 | Chamber supporting unit, and manufacturing method thereof |
| WO2019138456A1 (en) * | 2018-01-10 | 2019-07-18 | 東芝三菱電機産業システム株式会社 | Active gas generation device |
| KR102531814B1 (en) * | 2018-05-02 | 2023-05-11 | 도쿄엘렉트론가부시키가이샤 | Upper electrode and plasma treatment device |
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| TWI266361B (en) * | 2003-01-16 | 2006-11-11 | Japan Science & Tech Agency | RF power supply and plasma source apparatus |
| TW200721918A (en) * | 2005-10-28 | 2007-06-01 | Nissin Electric Co Ltd | Plasma producing method and apparatus as well as plasma processing apparatus |
| TW200810611A (en) * | 2006-02-20 | 2008-02-16 | Nissin Electric Co Ltd | Plasma generating method, plasma generating apparatus, and plasma processing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI266361B (en) * | 2003-01-16 | 2006-11-11 | Japan Science & Tech Agency | RF power supply and plasma source apparatus |
| TW200721918A (en) * | 2005-10-28 | 2007-06-01 | Nissin Electric Co Ltd | Plasma producing method and apparatus as well as plasma processing apparatus |
| TW200810611A (en) * | 2006-02-20 | 2008-02-16 | Nissin Electric Co Ltd | Plasma generating method, plasma generating apparatus, and plasma processing apparatus |
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