201135836 六、發明說明： 【發明所屬之技術領域】 本發明大體上關於在腔室中產生電漿的基材處理設 備，其中電漿是用來處理基材的表面。 【先前技術】 如本領域中具有通常知識者所知，製造諸如大型積體 (large scale integrated ; LSI)電路或平板顯示器（flat panel display ·，FPD)的電子裝置通常需要經過處理，諸如基材 之真空處理。 在真空處理方法中，供應氣體至腔室中，並藉由高壓 放電產生電漿。電漿粒子的加速力實體上將物質濺射至 基材上。基材上的物質藉由電漿的自由基而化學分解。 使用電漿的基材處理設備依據產生電敷的方法可分為 電容搞合電漿（capacitively coupled plasma ; CCP)設備以 及感應輕合電漿（inductively coupled plasma ; ICP)設備。 C CP方法包括施加rf功率至面向彼此的平行平坦電 極，並使用在兩個電極之間垂直形成的RF電場形成電 漿。ICP方法包括使用RF天線引發之感應電場將原料改 變成電漿。 一般而5 ’使用ICP方法的基材處理設備包括設置在 腔至之下部分的下電極。將基材放置於下電極上。該設 備進一步包括天線，其提供於腔室上或耦接至腔室殼體 201135836 的蓋體構架上。施加RF功率至天線。藉由供應反應氣體 至腔室中以在腔室產生電漿的方式來處理基材表面。 在使用ICP方法的基材處理設備中，天線大大地影響 電黎的生成以及製程的效能。因此，已提出各種天線， 例如螺旋RF天線、平行rF天線等。再者，已進行許多 研究來控制天線之間的距離，或改變介電板的厚度或形 狀以使電漿的密度均勻。 然而’在習知技術中，因為天線之間的距離必須受到 控制，或者介電板的厚度或結構必須被改變，以在腔室 中均勻地產生電漿，導致設備的結構複雜並使製程效能 的改良受到限制。 應了解，前述的習知技術為本案發明人在推導本發明 之刖便已知的資訊，或為在推導本發明之期間所獲得的 資訊，且應了解實際上並未暗示習知技術的結構在申請 曰前便為已知。 【發明内容】 因此，本發明在謹記著上述發生在先前技術中的問題 下而完成，且本發明之一目的便是提供其中具有天線平 行設置在腔室外側及内側的基材處理設備，使得電漿密 度均勻位在腔室中，因而增進了處理效能。 為了達成上述目的，在一態樣中’本發明提供一種基 材處理設備，其包括：腔室，在其中處理基材的表面； 201135836 第一天線’提供在腔室的外側，腔室中有視窗，其設置 於腔室與第一天線之間；以及第二天線，提供在腔室的 内側’第二天線圍繞著第一天線提供於其中的部分。 第一天線可位在腔室之上部分的中央部分上，且第二 天線可位在腔室之上部分的周緣，並圍繞第一天線提供 於其中的部分。 可在安裝於該腔室中的介電層内提供第二天線。 介電層可藉由在彼此之上堆疊複數個具有不同材料的 層所形成。該等層可堆疊在彼此之上，使得其介電常數 隨著從其中含有第二天線的層至最外層而增加。介電層 可從腔室内側朝向腔室外侧依序包含模鑄層及陶瓷層。 再者，可在連接至第二天線的尺1?供應線路，或用於接 地第二天線的接地線路中之至少一者上提供電容器。 在另一態樣中，本發明提供一種基材處理設備，包括： 腔室殼體；蓋體構架，其耦接至腔室殼體的上端，使得 腔室可藉由腔室殼體及蓋體構架所界定，且第—安裝呷 分形成在蓋體構架之上部分的中央部分中，第一安誓部 分具有一開放的孔形狀（holed shape);第一天線，布置 蓋體構架的第一安裝部分中；視窗，提供在蓋體構架的 第文裝部分中，視窗將第一天線與腔室的内側隔開，' 使得第一天線位於腔室的外側；以及第二天線，提供在 蓋體構架的内側，並圍繞第一安裝部分。 蓋體構架可具有第二安裝部分，其圍繞第一安裝部分 而形成，使得第二天線安裝在第二安裝部分中。 2 吊~"安 201135836 裝部分可具有凹陷形狀。 大此外，可於蓋體構架中提供隔板構件。隔板構件可將 第一女裝部分與第二安裝部分隔開。 較佳地，可設置在蓋體構架的上部分中提供套座，套 座從腔室的外側連接至第二天線，且可將連接器連接至 套座。 再者，可在第二安裝部分中提供介電層，且第二天線 可安裝在介電層中。 此外，可以環狀布置方式於第—安裝部分與第二安裝 部分之間提供喷淋頭。喷淋頭可將製程氣體注射至腔室 中。 喷淋頭具有向下注射孔以及水平注射孔，水平注射孔 經定向而朝向蓋體構架的中央部分。 另外’製減體供應單元可轉接至第一安裝部分的中 央部分’且可在蓋體構架上提供噴淋頭，使得製程氣體 被注射至第一安裝部分與第二安裝部分之下表面的整個 區域上。 本發明之上述關鍵技術方案可從下文的詳細描述以及 隨附圖式而變得更加清楚’並可根據本發明提出及解釋 其他各種技術方案。 【實施方式】 此後，將參照隨附圖式詳細地招述本發明的較佳實施 201135836 例。 現將參照圖式’其中在不同圖式中使用的相同參考元 件符號代表相同或相似的部件。 第1至3圖為根據本發明第一實施例之具有天線布置 結構之基材處理設備的視圖。第2圖為蓋體構架的截面 圖，其繪不天線布置結構。第3圖為繪示天線布置結構 的平面圖。 如第1圖所示’根據本發明的基材處理設備包括腔室 殼體11、基材支樓台15、下電極17、蓋體構架20、視 囪30、介電層35、複數個天線41及45、奸功率供應器 50以及製程氣體供應單元6〇及63。在腔室殼體η中提 供基材支撐台15及下電極17，並將基材s放置於基材 支撐台15及下電極17上。蓋體構架20耦接至腔室殼體 11的上端。視窗30及介電層35提供於蓋體構架2〇中。 天線4 1及45分別位於蓋體構架20的外側與内側。製程 氣體供應單元60及63將製程氣體供應至藉由腔室殼體 11及蓋體構架20所界定的腔室1〇中。 可藉由習知技術體現腔室殼體11、基材支樓台15及 下電極17，並因而將省略對這些部件的詳細描述。下文 將主要詳細解釋蓋體構架20(本發明的關鍵部分），及在 蓋體構架20中所提供之天線4 1及45的布置結構。 蓋體構架20耦接至腔室殼體11的開放上端。在腔室 10的中央部分已經被分隔成上腔室與下腔室的例子中， 蓋體構架20耦接至上腔室。可使用蓋體構架2〇的結構 201135836 輕易地體現上腔室’因此將主要解釋蓋體構架2〇的結 構。 蓋體構架2 0經配置使得兩組天線之一位於腔室1 〇的 外側（換言之，在大氣中），且另一組位於腔室i 〇的内側 (處於真空）。於後文中，在兩組天線之中，位於腔室 外側的天線指的是第一天線41 ,且位於腔室10内側的 天線指的是第二天線4 5。 第一天線41位於蓋體構架2〇的中央部分，其為腔室 10的***部分。第二天線45位於蓋體構架2〇的周緣， 並位於第一天線45的外側及下方。 為了體現上述的天線布置結構，蓋體構架2〇大體上具 有矩形的平板形狀。此外，參照平面圖，第一安裝部分 21位於蓋體構架20的中央部分上，且第二安裝部分25 在水平方向上位於第一安裝部分2丨的外侧。 第女裝部分21具有一開放的孔形狀（holed shape)， /成於蓋體構架2〇的中央部分之中。較佳地，_ !部 /V ^ 、刀 具有矩形的孔形狀，因為腔室10通常是六角 形。 中第一天線41在水平方向上布置於第一安裝部分21 勹人第天線41的下方提供視窗30。理想的視窗30 匕3由諸如陶瓷等材料製成的絕緣體3 j ^ 天線〇將第一天線41自腔室1〇的内部分隔，使第一 ―、21位於腔室10的外側，使得感應耦合電漿藉由第 天線41在腔室1〇中產生。 201135836 第二安裝部分25形成在蓋體構架20的下表面，盆位 於腔室1〇的内側。第二安裝部分25具有凹陷(depres:ed) 的形狀。由於第二安裝部分25係圍繞具有矩形孔形狀之 第-安裝部分21而提供1二安裝部分25較佳且 有矩形環狀的凹陷。 〃 第二天線45在水平方向上安裝於第二安裝部分Μ中。 詳δ之’介電層35提供於第二安裝部分25中。第二 天線45係埋入介電層35並因而固定在第二安裝部分υ 中。 刀 介電層35可包含在彼此之上堆疊的數個由不同材料 製成的層。較佳地，該等堆疊於彼此之上的層使得1介 電常數隨著從其中含有第二天線45的層至最外層(或最 上層）而增加。 介電層35可從腔冑10的内側依序包含模銹層37及陶 莞層39。可在模鑄層37下方設置絕緣層％，且可在陶 竞層39下方設置PTFE層38。理想的模鎊層”為聚石夕 氧（S〇製成，而絕緣層36以陶瓷製成。可於絕緣層％ 下方提供由非傳導材料製成的覆蓋膜。 大致上來說，就各個材料的介電常數（電容率）而言， 聚石夕氧的範圍從2至2.3, PTFE的範圍從4 i 6，:陶 瓷範圍從9至9.4。 在此實施例中’供應RF供率至第二天線45的電路是 經由第二安裝部分25的頂部連接到蓋體構架2〇。詳細 地說，套座55安裝在蓋體構架2〇的頂部中。連接器^ 201135836 輕接至套座55’且灯供應線路51連接至連接器57。由 於此將電路連接至第二天線45的結構包含將連接器刃 連接至構架2G的頂部，因而_於檢查及維修，且可顯 著的降低當施加功率至第二天線45時可能發生的rf雜 訊。 同時，喷淋頭61以矩形布置方式而提供於第一安裝部 分”與第二安裝部分25之間。喷淋頭61注射製程氣體 至腔室10中。 各個噴淋頭61可具有朝下定向（在垂直方向上）的向下 注射孔，以及經定向而朝向腔室10之中央部分（在水平 方向上）的水平注射孔。或者各個噴淋頭61可僅具有向 下注射孔。 在第2圖巾，元件符號60代表製程氣體供應線路，且 元件符號63代表在第一安裝部分21與第二安裝部分25 之間形成於蓋體構架20中的供應孔，以便將製程氣體從 製程氣體供應線路供應至噴淋頭6 i。 再者，第2圖的元件符號24代表形成在蓋體構架2〇 之周緣中的流動通道，使得加熱流體沿著流動通道流動。 第3圖為繪示第一天線41與第二天線45之布置結構 的平面圖。第一天線41穿過第一安裝部分21暴露至外 側。第二天線4 5位於蓋體構架2 〇内側。 再者，第一天線41或第二天線45可包含複數個彼此 組合且大體上以螺旋形式布置的天線。在第3圖所示的 實施例中，第一天線41包含兩個天線，且第二天線45 10 201135836 包含四個天線，其形成放射狀結構並以逆時鐘方向規則 布置。 除了此天線布置結構之外，也可依需要以各種形狀及 組合來布置天線。 在具有根據本發明之上述天線布置結構的基材處理設 備中’於基材處理操作期間，因為一些天線及其他剩下 的天線係個別地平行布置在大氣與真空中，可使用最大 的功率篁圍繞腔室10之壁及角落均勻地形成電漿。 再者，當兩組天線之間的頻率相變化可根據第一天線 41及第二天線45間之安裝位置的差異來控制時，可回 應基材處理操作的情況來適當地控制整個製程。因此， 可增進處理效率。 第4圖為根據本發明第二實施例之天線布置結構的詳 細視圖。 根據第二實施例之通用天線布置結構是相似於第一實 施例的天線社播 琛、”。構。然而，不像第一實施例，隔板構件71 從第一安梦八、 义〇刀2丨的視窗30延伸至圍繞視窗3〇周圍而 5又置之蓋體〇 Λ 遐構‘ 20的上部分’使得第一安裝部分21盥 第二安裝部分25隔開。 〃 開二在2第—實施例中以蓋體構架2°本身來隔 配置使得第―；二與第-安裝部分25,第二實施例經 裝部分25分隔部分藉由個別隔板構件71與第二安 理想地’隔板構件71由絕緣材料製成，特別是如PTFE。 11 201135836 隔板構件71在i中血加、 八中央部分具有凹陷結構 安裝部分21。第二安##、 心成第一 —女裝。p分25是藉由蓋體 隔板構件7〗的周圍部分 一 再木20以及 + # A 成，第二女裝部分25圍嶢第 一女裝部分2 1而提供。 国、、堯第 在具有隔板構件71與蓋體構架 諸如第一天線41、第始/ 貫施例中， 弟一天線45、介電層35等 件可以如第一每紘在丨* 的其他部 第，施例之該等部件的相同 此，將省略進—步的解釋以避免重複描述。”因 不像第一實施例，可描ffi：7班 1僅配置一喷淋頭61，，使製@ β触 被注射至第-安裝部分21及第二安裝部分 的整個區域上。在此例中，喷淋頭61，較佳由諸如陶曼或 其類似物的絕緣材料製成。 用於將製程氣體供應至噴淋頭61，的供應線路”,可穿 過隔板構件71的中央部分形成。 +在第4圖中，元件符號75代表設置在隔板構件71與 蓋體構架20之間的密封構件，i元件符號8〇代表將隔 板構件71緊固至蓋體構架2〇之上部分的緊固構架。 第5圖為根據本發明第三實施例之具有天線布置結構 之基材處理設備的截面圖。 除了具有電容H 81及82之夕卜第三實施例其餘部分 的大致構造相同於第一實施例的構造。 在本發明的第三實施例中，電容器8丨提供在RF供應 線路51的中間（medial)部分上，其中RF供應線路51從 RF功率供應器50連接至天線45。再者，電容器82是提 12 201135836 供在天線4 5的接地線路4 6上。 各個電容器8卜82較佳包含電容可被控制之真空可變 電容器（vacuum variable capacitor ; VVC)。 刀別在RF供應線路5 1以及接地線路46上提供的電容 器81與82可控制RF功率，使得當施加RF功率至天線 45時可最佳化阻抗匹配’而可適當地形成處理基材所需 的電漿。 除了這些部件之外，第三實施例的部件與上述實施例 的部件相同，因而使用相同的參考元件符號，且將省略 重複的描述。 上述之本發明可應用至任何以及所有使用電漿的基材 處理設備，例如，乾蝕刻器、化學氣相沉積設備等。 如上所述，根據本發明的基材處理設備具有以下功效。 在腔室的外側（大氣）及内側（真空狀態）提供天線。在腔 室外側提供的天線位在腔室的中央部分。在腔室内側提 供的天線位於鄰近腔室壁處。因此，不僅可在腔室的中 央部分也可在鄰近腔室壁的部分中使功率最大化，使得 形成在腔室中的電漿密度增加並均句分布在腔室的整個 區域’因而增進處理基材的效率。 進-步而言’當在腔室的内側及外側提供之兩組天線 的頻率相變化得以控制時’可回應基材處理操作的情況 適當地控制整個製程。因此’可增進處理效率。 另外，在本發明中，在蓋體構架的中央部分中提供單 -視窗。因此’即使腔室的尺寸增加，仍可輕易地設計 13 201135836 及體現天線及視窗的構造。 八=於本發明實施例的技術精神可獨立地實施… =儘官本發明已明確地參照其範例實施例圖示及描 述應了解習知技藝者可在不悖離本發明實施例之精神 及範_的情況下對本發明進行形式及細節的改變。因 此’本發明的精神及範疇須由隨附申請專利範圍界定。 14 201135836 【圖式簡單說明】 第1圖為根據本發明第一實施例之具有天線布置結構 之基材處理設備的截面圖。 ° 第2圖為根據本發明第一實施例之天線布置結構 細視圖。 °平 第3圖為根據本發明第一實施例之天線布置結構的平 面圖。 第4圖為根據本發明第—管施例之jr , 4贯73弟一貫他1J <天綠布置結構的詳 細視圖。 第5圖為根據本發明第二實施例之 +甘 乐一只 、有天線布置結構 之基材處理設備的截面圖。 【主要元件符號說明】 10 腔室 11 腔室殼體 15 基材支撐台 17 下電極 20 蓋體構架 21 第一安裝部分 24 流動通道 25 .第二安裝部分 30 視窗 31 絕緣體 35 介電層 15 201135836 36 絕緣層 37 模鑄層 38 PTFE 層 39 陶瓷層 41 天線 45 天線 46 接地線路 50 RF功率供應器 51 RF供應線路 5 5 套座 57 連接器 60 製程氣體供應單元 6 1、6 1， 喷淋頭 63、63’ 製程氣體供應單元 71 隔板構件 80 緊固構件 81 電容器 82 電容器 16BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention generally relates to a substrate processing apparatus for producing a plasma in a chamber in which a plasma is used to treat a surface of a substrate. [Prior Art] As is known to those of ordinary skill in the art, the manufacture of electronic devices such as large scale integrated (LSI) circuits or flat panel displays (FPDs) typically requires processing, such as substrates. Vacuum treatment. In the vacuum processing method, gas is supplied into the chamber, and plasma is generated by high voltage discharge. The acceleration of the plasma particles physically deposits the material onto the substrate. The material on the substrate is chemically decomposed by the free radicals of the plasma. The substrate processing apparatus using plasma can be classified into a capacitively coupled plasma (CCP) device and an inductively coupled plasma (ICP) device according to a method of generating an electric charge. The C CP method involves applying rf power to parallel flat electrodes facing each other and forming a plasma using an RF electric field formed vertically between the two electrodes. The ICP method involves the use of an induced electric field induced by an RF antenna to convert the feedstock into a plasma. Typically, the substrate processing apparatus using the ICP method includes a lower electrode disposed in a cavity to a lower portion. The substrate is placed on the lower electrode. The apparatus further includes an antenna that is provided on the chamber or coupled to the cover frame of the chamber housing 201135836. Apply RF power to the antenna. The surface of the substrate is treated by supplying a reactive gas into the chamber to produce a plasma in the chamber. In substrate processing equipment using the ICP method, the antenna greatly affects the generation of the electricity and the efficiency of the process. Therefore, various antennas have been proposed, such as a spiral RF antenna, a parallel rF antenna, and the like. Furthermore, many studies have been conducted to control the distance between the antennas or to change the thickness or shape of the dielectric plates to make the density of the plasma uniform. However, in the prior art, because the distance between the antennas must be controlled, or the thickness or structure of the dielectric plate must be changed to uniformly generate plasma in the chamber, the structure of the device is complicated and the process efficiency is The improvement is limited. It should be understood that the foregoing prior art is the information known to the inventor of the present invention, or is the information obtained during the derivation of the present invention, and it should be understood that the structure of the prior art is not actually implied. It is known before the application. SUMMARY OF THE INVENTION Accordingly, the present invention has been made in view of the above problems occurring in the prior art, and an object of the present invention is to provide a substrate processing apparatus having antennas disposed in parallel on the outside and inside of the chamber, The plasma density is evenly distributed in the chamber, thereby improving the processing efficiency. In order to achieve the above object, in one aspect, the present invention provides a substrate processing apparatus comprising: a chamber in which a surface of a substrate is treated; 201135836 a first antenna 'provided on the outside of the chamber, in the chamber There is a window disposed between the chamber and the first antenna; and a second antenna provided on the inner side of the chamber with a portion of the second antenna surrounding the first antenna. The first antenna can be positioned on a central portion of the upper portion of the chamber, and the second antenna can be positioned at a periphery of the upper portion of the chamber and surrounding the portion of the first antenna. A second antenna can be provided within the dielectric layer mounted in the chamber. The dielectric layer can be formed by stacking a plurality of layers having different materials on each other. The layers may be stacked on each other such that their dielectric constant increases with the layer from the second antenna to the outermost layer. The dielectric layer may sequentially include a mold layer and a ceramic layer from the inside of the chamber toward the outside of the chamber. Further, a capacitor may be provided on at least one of a ruler 1 supply line connected to the second antenna or a ground line connected to the second antenna. In another aspect, the present invention provides a substrate processing apparatus comprising: a chamber housing; a cover frame coupled to an upper end of the chamber housing such that the chamber can be closed by the chamber housing and the cover The body frame is defined, and the first mounting portion is formed in a central portion of the upper portion of the cover frame, the first swearing portion has an open holed shape; the first antenna is disposed on the cover frame a first mounting portion; a window provided in the first portion of the cover frame, the window separating the first antenna from the inside of the chamber, 'so that the first antenna is located outside the chamber; and the next day A wire is provided on the inside of the cover frame and surrounds the first mounting portion. The cover frame may have a second mounting portion formed around the first mounting portion such that the second antenna is mounted in the second mounting portion. 2 Hang ~ " An 201135836 The installed part can have a concave shape. In addition, a spacer member can be provided in the cover frame. The spacer member separates the first women's portion from the second mounting portion. Preferably, a socket may be provided in the upper portion of the cover frame, the socket being coupled from the outside of the chamber to the second antenna, and the connector being connectable to the socket. Furthermore, a dielectric layer can be provided in the second mounting portion and the second antenna can be mounted in the dielectric layer. Further, a shower head may be provided between the first mounting portion and the second mounting portion in an annular arrangement. The sprinkler injects process gas into the chamber. The showerhead has a downward injection aperture and a horizontal injection aperture oriented toward the central portion of the cover frame. In addition, the 'reduction body supply unit can be transferred to the central portion of the first mounting portion' and a shower head can be provided on the cover frame such that the process gas is injected to the lower surface of the first mounting portion and the second mounting portion On the entire area. The above-mentioned key technical solutions of the present invention will become more apparent from the following detailed description and the accompanying drawings. [Embodiment] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. The same reference element symbols, which are used in the different drawings, are the same or similar components. 1 to 3 are views of a substrate processing apparatus having an antenna arrangement structure according to a first embodiment of the present invention. Figure 2 is a cross-sectional view of the cover frame, which depicts the antenna arrangement. Fig. 3 is a plan view showing the arrangement of the antenna. As shown in FIG. 1 , the substrate processing apparatus according to the present invention includes a chamber casing 11 , a substrate support 15 , a lower electrode 17 , a cover frame 20 , a baffle 30 , a dielectric layer 35 , and a plurality of antennas 41 . And 45, the power supply 50 and the process gas supply units 6 and 63. The substrate supporting table 15 and the lower electrode 17 are provided in the chamber casing η, and the substrate s is placed on the substrate supporting table 15 and the lower electrode 17. The cover frame 20 is coupled to the upper end of the chamber housing 11. The window 30 and the dielectric layer 35 are provided in the cover frame 2〇. The antennas 4 1 and 45 are located on the outer side and the inner side of the cover frame 20, respectively. The process gas supply units 60 and 63 supply process gases to the chambers 1 defined by the chamber housing 11 and the cover frame 20. The chamber casing 11, the substrate branch 15 and the lower electrode 17 can be embodied by a conventional technique, and thus detailed description of these components will be omitted. The cover frame 20 (a key part of the present invention) and the arrangement of the antennas 4 1 and 45 provided in the cover frame 20 will be explained in greater detail below. The cover frame 20 is coupled to the open upper end of the chamber housing 11. In the example where the central portion of the chamber 10 has been divided into an upper chamber and a lower chamber, the cover frame 20 is coupled to the upper chamber. The structure of the cover frame 2〇 can be used. 201135836 The upper chamber is easily embodied. Therefore, the structure of the cover frame 2〇 will be mainly explained. The cover frame 20 is configured such that one of the two sets of antennas is located outside the chamber 1 ( (in other words, in the atmosphere) and the other set is located inside the chamber i ( (in vacuum). Hereinafter, among the two sets of antennas, the antenna located outside the chamber refers to the first antenna 41, and the antenna located inside the chamber 10 refers to the second antenna 45. The first antenna 41 is located at a central portion of the cover frame 2, which is the upper central portion of the chamber 10. The second antenna 45 is located on the periphery of the cover frame 2〇 and is located outside and below the first antenna 45. In order to embody the antenna arrangement described above, the cover frame 2 has a substantially rectangular plate shape. Further, referring to the plan view, the first mounting portion 21 is located on the central portion of the cover frame 20, and the second mounting portion 25 is located outside the first mounting portion 2丨 in the horizontal direction. The first women's section 21 has an open holed shape, which is formed in the central portion of the cover frame 2〇. Preferably, the _! portion /V^, the knife has a rectangular hole shape because the chamber 10 is generally hexagonal. The middle first antenna 41 is disposed in the horizontal direction below the first mounting portion 21 to provide a window 30 below the antenna 41. The ideal window 30 匕 3 is an insulator 3 j ^ antenna made of a material such as ceramic, separating the first antenna 41 from the inside of the chamber 1 , so that the first - 21 is located outside the chamber 10, so that the induction The coupled plasma is generated in the chamber 1 by the antenna 41. 201135836 The second mounting portion 25 is formed on the lower surface of the cover frame 20, and the basin is located inside the chamber 1〇. The second mounting portion 25 has a shape of a depression (depres: ed). Since the second mounting portion 25 surrounds the first mounting portion 21 having a rectangular hole shape, the second mounting portion 25 is preferably provided with a rectangular annular recess. 〃 The second antenna 45 is mounted in the second mounting portion 水平 in the horizontal direction. The dielectric layer 35 of the detail δ is provided in the second mounting portion 25. The second antenna 45 is buried in the dielectric layer 35 and thus fixed in the second mounting portion υ. The knife dielectric layer 35 can comprise a plurality of layers of different materials stacked on top of each other. Preferably, the layers stacked on top of each other such that the dielectric constant increases with increasing from the layer containing the second antenna 45 to the outermost layer (or uppermost layer). The dielectric layer 35 may sequentially include a mold rust layer 37 and a ceramic layer 39 from the inner side of the cavity 10. An insulating layer % may be disposed under the mold layer 37, and a PTFE layer 38 may be disposed under the ceramic layer 39. The ideal mold layer is made of polysulfide (S〇, and the insulating layer 36 is made of ceramic. A cover film made of non-conductive material can be provided under the insulating layer %. Generally speaking, each material In terms of dielectric constant (permittivity), polyoxin oxygen ranges from 2 to 2.3, PTFE ranges from 4 i 6 : ceramic ranges from 9 to 9.4. In this example, 'RF supply rate to supply' The circuit of the two antennas 45 is connected to the cover frame 2〇 via the top of the second mounting portion 25. In detail, the sleeve 55 is mounted in the top of the cover frame 2〇. The connector ^ 201135836 is lightly connected to the socket 55' and the lamp supply line 51 is connected to the connector 57. Since the structure for connecting the circuit to the second antenna 45 comprises connecting the connector blade to the top of the frame 2G, it is checked and repaired, and can be significantly reduced Rf noise that may occur when power is applied to the second antenna 45. At the same time, the shower head 61 is provided between the first mounting portion" and the second mounting portion 25 in a rectangular arrangement. The sprinkler 61 injection process Gas into the chamber 10. Each shower head 61 can have a downward orientation A downward injection hole in the vertical direction, and a horizontal injection hole oriented toward the central portion of the chamber 10 (in the horizontal direction). Alternatively, each of the shower heads 61 may have only a downward injection hole. A towel, component symbol 60 represents a process gas supply line, and component symbol 63 represents a supply hole formed in the cover frame 20 between the first mounting portion 21 and the second mounting portion 25 to supply process gas from the process gas. The line is supplied to the shower head 6 i. Further, the symbol 24 of Fig. 2 represents a flow passage formed in the periphery of the cover frame 2〇 so that the heating fluid flows along the flow passage. Fig. 3 is a diagram A plan view of an arrangement of an antenna 41 and a second antenna 45. The first antenna 41 is exposed to the outside through the first mounting portion 21. The second antenna 45 is located inside the cover frame 2 。. An antenna 41 or a second antenna 45 may comprise a plurality of antennas that are combined with each other and arranged substantially in a spiral form. In the embodiment illustrated in Figure 3, the first antenna 41 comprises two antennas, and the second Antenna 45 10 201135836 contains four Antennas, which form a radial structure and are regularly arranged in a counterclockwise direction. In addition to this antenna arrangement, the antennas may be arranged in various shapes and combinations as needed. The substrate treatment with the above-described antenna arrangement according to the present invention During the substrate processing operation, since some of the antennas and other remaining antennas are individually arranged in parallel in the atmosphere and in the vacuum, the plasma can be uniformly formed around the walls and corners of the chamber 10 using the maximum power. Furthermore, when the frequency phase change between the two sets of antennas can be controlled according to the difference in the mounting position between the first antenna 41 and the second antenna 45, the entire process can be appropriately controlled in response to the processing operation of the substrate. . Therefore, the processing efficiency can be improved. Fig. 4 is a detailed view of an antenna arrangement structure according to a second embodiment of the present invention. The general antenna arrangement according to the second embodiment is similar to that of the antenna of the first embodiment. However, unlike the first embodiment, the spacer member 71 is from the first Anmoji, the 〇 knife The two-sided window 30 extends to surround the window 3〇 and the cover member 5 the upper portion of the structure '20' separates the first mounting portion 21 from the second mounting portion 25. 〃 Open two at 2 - In the embodiment, the cover frame 2 is itself spaced apart such that the second and the first mounting portions 25, the second embodiment of the warp portion 25 is separated by the individual partition members 71 and the second ideally ' The partition member 71 is made of an insulating material, particularly, for example, PTFE. 11 201135836 The partition member 71 has a blood-added in i, and the central portion of the eighth portion has a recessed structure mounting portion 21. The second an##, the heart becomes the first-women The p part 25 is provided by the surrounding part of the cover partition member 7 and the second piece of wood 20 and + # A, and the second women's part 25 is provided by the first women's part 2 1 . Having a spacer member 71 and a cover frame such as the first antenna 41, in the first embodiment, the first one The line 45, the dielectric layer 35, and the like may be the same as the first part of the first part of the 丨*, and the components of the embodiment are the same, and the explanation of the step is omitted to avoid duplicating the description. In one embodiment, ffi: 7 class 1 is provided with only one shower head 61, so that the @β contact is injected onto the entire area of the first mounting portion 21 and the second mounting portion. In this case, the shower head 61 is preferably made of an insulating material such as Tauman or the like. A supply line for supplying process gas to the shower head 61 may be formed through a central portion of the spacer member 71. + In Fig. 4, reference numeral 75 denotes a spacer member 71 and a cover frame. A sealing member between 20, i symbol 8 〇 represents a fastening frame for fastening the spacer member 71 to a portion above the cover frame 2 第. FIG. 5 is an antenna arrangement according to a third embodiment of the present invention. A cross-sectional view of the substrate processing apparatus. The configuration of the remainder of the third embodiment is the same as that of the first embodiment except that it has capacitors H 81 and 82. In the third embodiment of the present invention, the capacitor 8丨Provided on the medial portion of the RF supply line 51, wherein the RF supply line 51 is connected from the RF power supply 50 to the antenna 45. Again, the capacitor 82 is provided on the ground line 46 of the antenna 45. Each capacitor 8 82 preferably includes a vacuum variable capacitor (VVC) whose capacitance can be controlled. The capacitors 81 and 82 provided on the RF supply line 51 and the ground line 46 can control the RF power. Make The plasma matching can be optimized when RF power is applied to the antenna 45. The plasma required for processing the substrate can be appropriately formed. The components of the third embodiment are identical to the components of the above embodiment except for these components, and thus used The same reference numerals are used, and the repeated description will be omitted. The above-described invention can be applied to any and all substrate processing apparatuses using plasma, for example, a dry etcher, a chemical vapor deposition apparatus, etc. As described above, The substrate processing apparatus of the present invention has the following effects: An antenna is provided on the outer side (atmosphere) and the inner side (vacuum state) of the chamber. The antenna provided on the outside of the chamber is located at a central portion of the chamber. The antenna provided on the inside of the chamber Located adjacent to the chamber wall. Therefore, the power can be maximized not only in the central portion of the chamber but also in the portion adjacent to the chamber wall, so that the density of the plasma formed in the chamber is increased and evenly distributed in the chamber. The entire area' thus enhances the efficiency of handling the substrate. In the step-by-step, when the frequency phase changes of the two sets of antennas provided on the inside and outside of the chamber are controlled The process can be appropriately controlled in response to the case of the substrate processing operation. Therefore, the processing efficiency can be improved. Further, in the present invention, a single-window is provided in the central portion of the cover frame. Therefore, even the size of the chamber In addition, it is still easy to design 13 201135836 and to embody the structure of the antenna and the window. The technical spirit of the embodiment of the present invention can be implemented independently... The present invention has been explicitly illustrated and described with reference to the exemplary embodiments thereof. A person skilled in the art can change the form and details of the present invention without departing from the spirit and scope of the embodiments of the present invention. Therefore, the spirit and scope of the present invention must be defined by the scope of the accompanying application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing a substrate processing apparatus having an antenna arrangement structure according to a first embodiment of the present invention. Fig. 2 is a detailed view of an antenna arrangement structure according to a first embodiment of the present invention. ° Fig. 3 is a plan view showing an antenna arrangement structure according to the first embodiment of the present invention. Fig. 4 is a detailed view of the arrangement of the 1J < sky green arrangement in accordance with the first embodiment of the present invention. Fig. 5 is a cross-sectional view showing a substrate processing apparatus having an antenna arrangement structure according to a second embodiment of the present invention. [Main component symbol description] 10 Chamber 11 Chamber housing 15 Substrate support table 17 Lower electrode 20 Cover frame 21 First mounting portion 24 Flow channel 25. Second mounting portion 30 Window 31 Insulator 35 Dielectric layer 15 201135836 36 Insulation 37 Molded layer 38 PTFE layer 39 Ceramic layer 41 Antenna 45 Antenna 46 Ground line 50 RF power supply 51 RF supply line 5 5 Seat 57 Connector 60 Process gas supply unit 6 1 , 6 1 , Sprinkler 63, 63' process gas supply unit 71 baffle member 80 fastening member 81 capacitor 82 capacitor 16