TWI458001B - 切晶片／晶粒接合片及其製備方法 - Google Patents

切晶片／晶粒接合片及其製備方法 Download PDF

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Publication number
TWI458001B
TWI458001B TW093138648A TW93138648A TWI458001B TW I458001 B TWI458001 B TW I458001B TW 093138648 A TW093138648 A TW 093138648A TW 93138648 A TW93138648 A TW 93138648A TW I458001 B TWI458001 B TW I458001B
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Taiwan
Prior art keywords
resin
wafer
layer
resins
film
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TW093138648A
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English (en)
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TW200525619A (en
Inventor
Manabu Sutoh
Yoshito Ushio
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Dow Corning Toray Silicone
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Publication of TW200525619A publication Critical patent/TW200525619A/zh
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Publication of TWI458001B publication Critical patent/TWI458001B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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Description

切晶片/晶粒接合片及其製備方法
本發明係關於一種在半導體晶圓(特別為具有在其上形成的電子電路之半導體晶圓)由切晶片分離成單獨晶片之步驟中所用的切晶片/晶粒接合片。
矽等之半導體晶圓在一系列步驟中加工成半導體元件，此等步驟包括，在其表面上形成複數個電子電路，背磨在其表面上形成電子電路之半導體晶圓，將半導體晶圓固定到基膜，由切割(切晶片)使其分離成含電子電路之單獨IC晶片，固定(接合)上述IC晶片到引線框架及用樹脂密封上述晶片。
在由切割半導體晶圓獲得的IC晶片固定到引線框架時，晶片用黏著劑固定到引線框架的晶片固定區域(固定部分)。如果上述黏著劑為液體，它們以小滴形式塗覆到上述晶片固定區域的表面或塗覆到晶片自身，但在施加此等液體黏著劑滴時，難以精確控制黏著劑之量，如果晶片太小，則黏著劑自晶片下擠出，如果晶片太大，則可能不足。
因此，已開發一種用預形成到均勻厚度的乾燥薄膜類型黏著劑使IC晶片固定到引線框架之晶片固定區域之方法。在此方法的一種方案中，一層薄膜類型黏著劑形成於晶片固定區域中，而在另一方案中，一層薄膜類型黏著劑預先形成於晶片自身上。但，就製備半導體元件所需的成本和工作而言，此方法顯示嚴重問題，因為在於晶片固定區域 形成薄膜類型黏著劑層的方法方案中需要在晶片固定區域形成黏著劑層之額外步驟，亦因為在晶片固定區域窄表面上於預定位置精確形成匹配晶片形狀的黏著劑層之製程本身很難。
另一方面，在IC晶片上預先形成薄膜類型黏著劑層之方法方案中未出現上述問題。即，在先於晶粒接合步驟的切晶片步驟中，可在半導體晶圓固定到基膜時的點於半導體晶圓表面上提供黏著劑層，因此，不必在晶粒接合步驟期間形成黏著劑層。此外，在切晶片步驟中，切割用黏著劑提供的半導體晶圓使得能夠用精確匹配晶片表面形狀的黏著劑層獲得晶片。
因此，為能夠在切晶片步驟中預先於晶片表面上具有黏著劑層，現已開發其中於基膜上形成黏著劑層的所謂全合一(或預切割類型)切晶片；因此，例如，日本未審查專利申請公開案第Hei 9-266183號提供在基膜上具有聚醯亞胺黏著劑層的切晶片/晶粒接合片。
由於以聚矽氧為主的黏著劑具有與半導體晶圓等有關的優良處理性能和極佳熱阻及黏著性能，可預期其用於在晶粒接合步驟使IC晶片固定到引線框架。但，在用具有直接塗覆到基膜的以聚矽氧為主黏著劑層之切晶片/晶粒接合片進行切晶片時，以聚矽氧為主的黏著劑層不會充分黏著到半導體晶圓，但未展示與基膜有關的強黏著，因此，晶片有時可能與以聚矽氧為主的黏著劑層一道自基膜剝落(晶片脫層)。晶片脫層為不理想現象，因為其降低半導體元 件製造之效率。
此外，在由以聚矽氧為主的黏著劑直接施加到基膜形成切晶片/晶粒接合片時，特別施加到具有在其表面上形成的以丙烯酸系為主的感壓黏著劑薄層之基膜類型，在以聚矽氧為主的黏著劑和以丙烯酸系為主的感壓黏著劑層間之界面之接合/黏著力隨時間增加，這可能導致長期儲存穩定性問題。
本發明之目的為消除上述問題，且為達到這一目的，本發明提供具有與半導體晶圓和基膜有關的極佳黏著性能、防止晶片在切晶片製程期間脫層且具有極佳儲存穩定性之全合一切晶片/晶粒接合片。
本發明之目的用具有基膜、在基膜上形成的底塗層及在底塗層上形成的以聚矽氧為主之黏著劑層之切晶片/晶粒接合片達到。較佳地，在接合到半導體晶圓後，以聚矽氧為主的黏著劑層可自上述底塗層剝落。上述底塗層可為由至少兩層組成之層合物。此外，基膜之表面積較佳大於半導體晶圓之表面積，特別在半導體晶圓為圓形時，比半導體晶圓具有更大直徑之圓形基膜更佳。此外，本發明之切晶片/晶粒接合片可用可剝落保護層塗覆。
製備本發明切晶片/晶粒接合片之最簡單方式為進行在基膜上形成以聚矽氧為主的黏著劑層及底塗層之步驟。
此外，本發明之切晶片/晶粒接合片可由以下步驟製備：其中在剝落層上形成以聚矽氧為主的黏著劑層及底塗層之 第一步驟，其中使基膜施加到上述底塗層表面之第二步驟，及其中剝離上述剝落層之第三步驟。此外，在此例中，可進一步提供其中在上述以聚矽氧為主的黏著劑層上形成可剝落保護層之第四步驟。
亦可由其中在可剝落保護層上形成以聚矽氧為主的黏著劑層及底塗層之第一步驟以及其中使基膜施加到上述底塗層表面之第二步驟製備本發明之切晶片/晶粒接合片。
由於在本發明之切晶片/晶粒接合片中，以聚矽氧為主的黏著劑層不直接與基膜接觸，本發明能夠避免自直接接觸引起的不同問題。例如，本發明之切晶片/晶粒接合片使得能夠避免晶片脫層現象，這在利用切晶片/晶粒接合片且其具有與基膜直接接觸的以聚矽氧為主之黏著劑層時經常遇到。此外，其允許在基膜和以聚矽氧為主的黏著劑層間之接觸界面由剝落強度經時間增加改良長期儲存穩定性，在具有於基膜表面上形成的以丙烯酸系為主的感壓黏著劑層時，這特別明顯。
另外，雖然在用具有與黏著劑層直接接觸的基膜之切晶片/晶粒接合片將半導體晶圓切片後，為在自基膜移除半導體晶圓片時降低與黏著劑層有關的基膜之黏著性，可能需要UV照射，但在本發明之切晶片/晶粒接合片之例中此等UV照射不為必需，因為基膜不黏著性接合到黏著劑層。
以下詳細解釋本發明之切晶片/晶粒接合片及其製備方法。
如圖1中所示，本發明之切晶片/晶粒接合片由基膜(1)、在基膜(1)表面上形成的底塗層(2)以及在底塗層(2)表面上形成的以聚矽氧為主之黏著劑層(3)組成。同樣，如圖2中所示，本發明之切晶片/晶粒接合片可由保護層(4)保護。自儲存穩定性觀點，保護層(4)較佳覆蓋如圖1中所示的以聚矽氧為主之黏著劑層(3)之整個表面。
最適用於基膜(1)的材料包括在薄膜長度和寬度方向上可拉伸之材料，具體為聚乙烯薄膜、聚氯乙烯薄膜、聚丁烯薄膜、聚丁二烯薄膜、聚胺基甲酸酯薄膜、聚酯薄膜、聚醯胺薄膜、乙烯-乙酸乙烯酯共聚物薄膜、乙烯-(甲基)丙烯酸共聚物薄膜、乙烯-(甲基)丙烯酸甲酯共聚物薄膜、乙烯-(甲基)丙烯酸乙酯共聚物薄膜及其它由軟樹脂製成之薄膜。基膜(1)可為數層薄膜之層合物。雖然沒有關於基膜(1)厚度的特別限制，但通常為約10至300微米，更佳約50至200微米。
可使薄感壓黏著劑層形成於基膜(1)之表面上，可將普通以丙烯酸系、乙烯系、聚胺基甲酸酯、聚矽氧及聚酯為主的感壓黏著劑用於感壓黏著劑層。在此等常用的感壓黏著劑中，自黏著性觀點，以丙烯酸系為主的感壓黏著劑較佳。
以丙烯酸系為主的感壓黏著劑包含丙烯酸系同聚物或共聚物作為其主要成分。丙烯酸系同聚物為丙烯酸或丙烯酸酯之同聚物，丙烯酸系共聚物通常為主單體(如，在酯部分具有C1 -C18 烷基之丙烯酸酯)和具有官能基(如，羥基、羧基、胺基等)之輔助可共聚單體之共聚物。雖然沒有關於丙 烯酸系同聚物或共聚物分子量的特別限制，但其重量平均分子量在1.0×105 至1.0×106 之範圍內，尤佳在4.0×105 至8.0×105 之範圍內。此外，黏著及內聚力可由適量交聯劑加入含有具上述官能基之丙烯酸系共聚物之感壓黏著劑予以控制。交聯劑之實例為多價異氰酸酯化合物、多價環氧化合物、多價氮丙啶化合物、金屬螯合化合物等。此等以丙烯酸系為主的感壓黏著劑可包含一、二或多種丙烯酸系同聚物或共聚物，並可包含各種添加劑。
在基膜(1)表面上形成上述感壓黏著劑層允許在基膜(1)和底塗層(2)之間較佳整合。感壓黏著劑層之厚度較佳在1至50微米之範圍內，尤佳在5至30微米之範圍內。此外，在基膜(1)自身由相對於底塗層(2)具有極佳黏著性之材料製成時，或在基膜(1)具有允許其牢固接合到底塗層(2)之表面結構時，上述感壓黏著劑層可能不必要。
底塗層(2)以適合強度黏著性接合到基膜(1)及以聚矽氧為主的黏著劑層(3)，如需要，具有允許其自以聚矽氧為主的黏著劑層(3)剝落且同時保持其對基膜(1)接合之性質。雖然沒有關於底塗層(2)厚度的特別限制，但通常在1至100微米之範圍內，更佳在5至50微米之範圍內。
雖然由無機物質(如，金屬、金屬氧化物等)製成的薄膜和由有機物質(如，塑膠、樹脂、橡膠等)製成的薄膜二者均可用於底塗層(2)，但自拉伸性能觀點，由有機物質製成的薄膜更佳。上述由有機物質製成的薄膜之具體實例為由以下材料製成的薄膜：聚乙烯樹脂、聚丙烯樹脂、氟樹脂、 聚對酞酸乙二醇酯(PET)樹脂、聚對酞酸丁二醇酯樹脂、聚醚醯亞胺樹脂、聚碸樹脂、聚醚碸(PES)樹脂、纖維素三乙酸酯(TAC)樹脂及其它纖維素樹脂、聚醯亞胺樹脂、聚酯樹脂、聚醚樹脂、聚醚酮樹脂、聚醚醚酮樹脂、環氧樹脂、聚醯胺樹脂、聚氧亞甲基樹脂、聚苯硫樹脂及其它有機樹脂。雖然底塗層一般僅由一層上述薄膜組成，但如需要，可為二或多層相同或不同薄膜之層合物。
在與以聚矽氧為主的黏著劑層(3)接觸佈置的底塗層(2)之表面上較佳存在氧原子及/或硫原子。氧原子較佳形成選自包含羰基、烷氧基、酯和醚基之群組之基團之部分，硫原子較佳形成選自包含碸和硫醚基之群組之基團之部分。在底塗層(2)之表面上存在氧原子及/或硫原子及存在含氧原子及/或硫原子之基團作為其組成原子由元素分析、螢光X-射線分析、X-射線微分析儀分析、紅外吸收分析、ESCA分析等證明。雖然沒有關於此等原子或基團含量的特別限制，但含量應可由上述分析方法檢測。關於以聚矽氧為主黏著劑層(3)具有適合剝落性能且包含氧原子及/或硫原子的底塗層(2)表面所用物質實例為聚酯樹脂、聚醚樹脂、聚醚醚酮樹脂、環氧樹脂、酚醛樹脂、聚氧亞甲基樹脂、聚醯亞胺樹脂、聚醯胺樹脂、聚醚醯亞胺樹脂、纖維素樹脂(纖維素二乙酸酯、纖維素三乙酸酯等)、聚碸樹脂、聚醚碸樹脂及在其組成分子中具有此等原子之聚苯硫樹脂。
另一方面，如果由在氧氣氣氛下或在含硫物質氣氛下(二氧化硫等)使其表面經過物理及/或化學處理將氧原子及/或 硫原子作為組成原子引入此等物質之表面，如，電暈放電處理、輝光處理、電漿處理、臭氧處理、UV處理等，亦可使用聚乙烯樹脂、聚丙烯樹脂、氟樹脂及其它在其組成分子中不具有氧原子及/或硫原子之有機物質。
此外，如需要，可使與以聚矽氧為主的黏著劑層(3)接觸佈置的底塗層(2)之表面經過離形處理。此等離形處理所用的離形劑尤其包括以醇酸樹脂(alkyd)、聚矽氧、氟、不飽和聚酯、聚烯烴及蠟為主的離形劑，以醇酸樹脂、聚矽氧及氟為主的離形劑較佳，以醇酸樹脂為主的離形劑特佳。
其中用上述離形劑使底塗層(2)表面經過離形處理之具體實施例包括，例如，其中用凹版塗覆器、邁爾(Meyer)棒塗覆器、氣刀塗覆器或輥塗覆器等使離形劑原樣施加或用稀釋劑稀釋或以乳化態施加到表面且在正常溫度、加熱或用電子束硬化之方法。此外，可由濕層合、乾燥層合、熱熔層合、熱熔擠壓層合、共擠壓處理等形成底塗層(2)和離形劑之層合物。
在本發明之切晶片/晶粒接合片中，其中因在切片期間以聚矽氧為主的黏著劑層(3)和基膜(1)間的不足接合力晶片與以聚矽氧為主的黏著劑層(3)一道剝離基膜(1)的晶片脫層現象可以避免，因為基膜(1)和以聚矽氧為主的黏著劑層(3)通過底塗層(2)媒介物接合而不直接相互接觸。此外，在以聚矽氧為主的黏著劑層(3)直接施加到基膜(1)時，尤其在其直接施加到具有在其表面上形成的以丙烯酸系為主感壓黏著劑薄層類型之基膜(1)時，防止基膜(1)和以聚矽氧為主 的黏著劑層(3)間的接合/黏著力隨時間明顯增加，並可改良切晶片/晶粒接合片之長期儲存穩定性。
此外，儘管日本未審查專利申請公開案第Hei 9-266183號描述將高熱阻聚醯亞胺黏著劑層用於晶圓切片所用之接合片，其中聚醯亞胺黏著劑層和軟薄膜通過聚醯亞胺處理薄膜媒介物接合在一起，但，藉由消除在形成聚醯亞胺黏著劑層中所用的高極性/高沸點溶劑對軟薄膜之影響，上述聚醯亞胺薄膜可預期能夠使用不同類型軟薄膜，這明顯與預期消除使用以聚矽氧為主黏著劑層有關潛在問題的本發明不同。
沒有關於以聚矽氧為主黏著劑層(3)的特別限制，只要所用材料包含聚矽氧物質作為主要成分，且所提出的實例包括彈性體材料及黏土類型材料。沒有關於以聚矽氧為主黏著劑層(3)形狀的特別限制，但如果出於實際考慮，其厚度應較佳在1至5000微米之範圍內，尤其在5至1000微米之範圍內，5至100微米甚至更佳。此等以聚矽氧為主的黏著劑可以購得，例如，購買FA60K2、FA3010系列及FA2000系列薄膜(以上均為自道-科寧-托瑞聚矽氧公司(Dow Corning Toray Silicone)的晶粒附著薄膜)。
雖然沒有關於保護層(4)材料的特別限制，只要其能夠容易剝離以聚矽氧為主的黏著劑層(3)及基膜(1)，適合材料一般包括聚乙烯薄膜、聚丙烯薄膜、聚苯乙烯薄膜、聚氯乙烯薄膜、聚二氯亞乙烯薄膜、聚酯薄膜、聚丁烯薄膜、聚丁二烯薄膜、聚胺基甲酸酯薄膜、聚醯胺薄膜、乙烯-乙酸 乙烯酯共聚物薄膜、乙烯-(甲基)丙烯酸共聚物薄膜、乙烯-(甲基)丙烯酸甲酯共聚物薄膜、乙烯-(甲基)丙烯酸乙酯共聚物薄膜、由氟樹脂製成之薄膜、聚對酞酸乙二醇酯(PET)樹脂、聚對酞酸丁二醇酯樹脂、聚醚醯亞胺樹脂、聚碸樹脂、聚醚碸(PES)樹脂、纖維素三乙酸酯(TAC)樹脂及其它纖維素樹脂、聚醯亞胺樹脂、聚酯樹脂、聚醚樹脂、聚醚酮樹脂、聚醚醚酮樹脂、環氧樹脂、酚醛樹脂、聚醯胺樹脂、聚氧亞甲基樹脂、聚苯硫樹脂及其它有機樹脂。保護層(4)可為數層薄膜之層合物。雖然沒有關於保護層(4)厚度的特別限制，但通常為約5至50微米，更佳約1至10微米。
可在與以聚矽氧為主的黏著劑層(3)接觸的保護層(4)之側部表面上形成感壓黏著劑薄層，且可將與基膜(1)表面上形成的以丙烯酸系為主的黏著劑相同類型之材料用於該感壓黏著劑層。
另一方面，如需要，可使與以聚矽氧為主的黏著劑層(3)接觸的保護層(4)側之表面經過離形處理，且與底塗層(2)表面上所進行處理相同類型之處理可作為此離形處理進行。
本發明之切晶片/晶粒接合片可用任何可應用方法藉由在基膜(1)表面上相繼形成底塗層(2)和以聚矽氧為主的黏著劑層(3)而製備。此外，為保持以聚矽氧為主的黏著劑層(3)經時間之黏著性能，較佳進一步施加保護層(4)。
本發明之切晶片/晶粒接合片可較佳由以下圖3中圖示之方法製備。根據此方法，首先，如圖3(a)中所示，在由適合 材料製成的剝落層(5)之表面上形成以聚矽氧為主的黏著劑層(3)和底塗層(2)。以聚矽氧為主的黏著劑層(3)和底塗層(2)可連續形成於剝落層(5)之表面上，或可以其中相互預先疊加的層合物形式沈積於剝落層(5)之表面上。
下一步，如圖3(b)中所示，用切割器或衝頭切出在剝落層(5)表面上相繼形成的以聚矽氧為主之黏著劑層(3)和底塗層(2)之部分，如此使以聚矽氧為主的黏著劑層(3)和底塗層(2)之其餘部分匹配半導體晶圓大小。部分切割器或衝頭可達到剝落層(5)之表面。此外，在剝落層(5)表面上沈積的以聚矽氧為主之黏著劑層(3)和底塗層(2)可預先切割及成形，以匹配半導體晶圓大小，在此例中，上述切割操作不需要。
下一步，如圖3(c)中所示，在底塗層(2)側上施加基膜(1)，然後自以聚矽氧為主的黏著劑層(3)剝離剝落層(5)。由此製造全合一切晶片/晶粒接合片，其中以聚矽氧為主的黏著劑層(3)通過***其間的底塗層(2)媒介物以不連續方式提供於基膜(1)之表面上。此外，如果基膜(1)與剝落層(5)接觸，如圖中所示，則剝落層(5)應以基膜(1)自身不拉伸之方式剝落。
此外，如圖3(d)中所示，在移除剝落層(5)後，較佳用保護層(4)塗覆以聚矽氧為主的黏著劑層(3)之表面。這將進一步改良本發明之切晶片/晶粒接合片之長期穩定性。同樣，如圖3(e)中所示，用切割器或衝頭切出位於底塗層(2)和以聚矽氧為主之黏著劑層(3)周邊部分外側之部分基膜(1)，以 使基膜(1)分成大於半導體晶圓尺寸的切段。這使得可能有效製造複數個切晶片/晶粒接合片。
此外，本發明之切晶片/晶粒接合片亦可由以下圖4中圖示之方法製備。根據此方法，首先，如圖4(a)中所示，在剝落層(5)之表面上形成以聚矽氧為主的黏著劑層(3)和底塗層(2)。以聚矽氧為主的黏著劑層(3)和底塗層(2)可連續形成於剝落層(5)之表面上，或可以預先層合物形式沈積於剝落層(5)之表面上。
下一步，如圖4(b)中所示，剝離剝落層(5)，隨後用(例如)EM塗覆器在以聚矽氧為主的黏著劑層(3)之表面上沈積保護層(4)。因此獲得一層合物，如圖4(c)中所示者。以與圖3中相同之方式，這進一步改良本發明之切晶片/晶粒接合片之長期儲存穩定性。
下一步，如圖4(d)中所示，用切割器或衝頭切出相繼形成的以聚矽氧為主之黏著劑層(3)和底塗層(2)之部分，如此使以聚矽氧為主的黏著劑層(3)和底塗層(2)之其餘部分匹配半導體晶圓大小。部分切割器或衝頭可達到保護層(4)之表面。
下一步，如圖4(e)中所示，將基膜(1)施加到底塗層(2)。由此可獲得全合一切晶片/晶粒接合片，其中以聚矽氧為主的黏著劑層(3)通過***其間的底塗層(2)媒介物提供於基膜(1)之表面上。此外，如圖中所示，較佳使保護層(4)與基膜(1)接觸，如此使以聚矽氧為主的黏著劑層(3)之整個表面與外部環境隔離。與圖3中所示方法不同，該製備方法預防在 剝落步驟期間拉伸基膜(1)之風險，因為沒有其中自基膜(1)剝離剝落層(5)之步驟。因此，可避免損害切片所需的拉伸性及其它機械性能之風險。
此外，如圖4(f)中所示，可用切割器或衝頭切出與底塗層(2)和以聚矽氧為主的黏著劑層(3)周邊部分離開的部分基膜(1)，以使基膜(1)形成大於半導體晶圓尺寸的不連續切段。這使得可能有效製造複數個切晶片/晶粒接合片。
本發明之切晶片/晶粒接合片可以下列方式使用。
在用本發明之切晶片/晶粒接合片切割半導體晶圓以自所得晶片製備半導體元件時，首先，如圖5中所示，將切晶片/晶粒接合片之基膜(1)之邊緣固定到切晶片機之支撐環(6)，且使半導體晶圓(7)接合到該片的以聚矽氧為主之黏著劑層(3)。依賴以聚矽氧為主的黏著劑層(3)之類型，半導體晶圓接合到以聚矽氧為主之黏著劑層(3)可在加熱下進行。此外，可在半導體晶圓(7)接合到以聚矽氧為主之黏著劑層(3)之後將基膜(1)固定到支撐環(6)。為便於切晶片/晶粒接合片固定到支撐環(6)，亦較佳在基膜(1)之邊緣上形成支撐環所用之感壓黏著劑層。
下一步，如圖6中所示，用切割工具(如，切片鋸等，未顯示)切割半導體晶圓(7)與以聚矽氧為主之黏著劑層(3)，由此製造IC晶片。雖然此時適當設定切割深度參數，以切割半導體晶圓(7)和以聚矽氧為主之黏著劑層(3)，但不需要以精確方式調節，因為如圖中所示，亦可切割底塗層(2)，且亦可在基膜(1)的某些部分由切割工具形成切口。
同樣，在基膜(1)由擴張支撐環(6)而拉伸時，單獨晶片間的間隙變大，且容易撿拾。
下一步，如圖7中所示，用晶粒夾頭或另一種撿拾工具(未顯示)自底塗層(2)之表面撿拾單個IC晶片(7a)~(7f)與黏著到晶片的以聚矽氧為主之黏著劑層(3)。IC晶片(7a)~(7f)和以聚矽氧為主的黏著劑層(3)間之黏著強度高於以聚矽氧為主的黏著劑層(3)和底塗層(2)間之黏著黏度。
如圖8中所示，將如此用以聚矽氧為主之黏著劑層提供的所得IC晶片(例如，(7a))通過以聚矽氧為主之黏著劑層(3)之媒介物接合並固定到引線框架之固定墊，且如需要，可進一步使其經過加熱處理。加熱處理溫度一般不高於200℃。然後用接線(10)將IC晶片(7a)連接到已連到外引線的電路佈線(9)。固定墊(8)可由陶瓷、玻璃、環氧樹脂、聚醯亞胺樹脂、酚醛樹脂、電木(bakelite)樹脂、三聚氰胺樹脂、玻璃纖維-增強型環氧樹脂等組成。電路佈線(9)可由金、銅、鋁、銀鈀、氧化錫銦(ITO)等製成。接線(10)可由金、銅、鋁等製成。
最後，如圖8中所示，用熱阻樹脂(11)在樹脂中密封IC晶片(7a)。可用適合環氧樹脂、酚醛樹脂及聚苯硫樹脂作為熱阻樹脂。
實例
現在參考應用實例詳細說明本發明之切晶片/晶粒接合片及其製備方法。
[應用實例1]
晶粒附著薄膜(自道-科寧-托瑞聚矽氧公司的FA60K2)具有一種三層結構，三層結構包括接合到以聚矽氧為主的黏著劑層之薄膜A和薄膜B，將該晶粒附著薄膜切成具有150毫米直徑之圓片，達到自一側上的薄膜B到另一側上的薄膜A延伸之一定深度，藉此，具有150毫米直徑的圓形部分適當保留，餘者自半切薄膜A移除。
下一步，使具有在其上形成的感壓黏著劑材料層之基膜(UHP-110B，自Denki Kagaku Kogyo Kabushiki Kaisha)黏著到已成形為具有150毫米直徑圓片的薄膜B，然後將其切成具有190毫米直徑的同心圓片，達到自基膜至薄膜A延伸的一定深度，藉此，圓形部分適當保留，周邊部分移除。
因此獲得一種包括晶粒附著薄膜及基膜之複合薄膜，其中薄膜B插在以聚矽氧為主的黏著劑層和基膜之間。
以聚矽氧為主的黏著劑層和薄膜B間之剝落強度為2.5牛頓/米，基膜和薄膜B間之剝落強度為125牛頓/米。
在薄膜於50℃經過熱熟化歷預定時間後，檢驗以聚矽氧為主的黏著劑層和薄膜B間之剝落強度變化。結果顯示於表1中。
下一步，自複合薄膜移除薄膜A，使支撐環附著到基膜的周邊，並由在80℃加壓使6英寸矽晶圓附著到以聚矽氧為主的黏著劑層。隨後，在40毫米/秒之進料速度及30,000轉/分鐘之旋轉速度，用自迪斯克公司(Disco Corporation)的具有NBC-ZH2050-SE(27HEEE)刀片之切晶片機DAD-2H/6T將晶圓切成具有5毫米×5毫米晶片大小之晶片。以聚矽氧為 主的黏著劑層與矽晶圓一起經歷切片。在切晶片期間未注意到晶片脫層。
緊在切晶片之後，與以聚矽氧為主的黏著劑層一起切片的矽晶圓晶片藉由擴展基膜撿拾，並由在150℃施加1兆帕壓力歷1秒鐘黏著到自宇部工業有限公司(Ube Industries,Ltd.)之UPIREX 125S，並且檢驗其黏著性能。以同樣方式，在切晶片後，使晶片在50℃經歷熱老化144小時，撿拾，並由在150℃施加1兆帕壓力歷1秒鐘黏著到自宇部工業有限公司之UPIREX 125S，並且檢驗其黏著性能。結果顯示於表1中。
[比較實例1]
晶粒附著薄膜(自道-科寧-托瑞聚矽氧公司的FA60K2)具有一種三層結構，其中薄膜A和薄膜B接合到以聚矽氧為主的黏著劑層之兩側，將該晶粒附著薄膜切成具有150毫米直徑之圓片，達到自一側上的薄膜B到另一側上的薄膜A延伸之一定深度，藉此，具有150毫米直徑的圓形部分適當保留，餘者自半切薄膜A移除。
下一步，移除已成形為具有150毫米直徑圓片的薄膜B，使具有在其上形成的感壓黏著劑材料層之基膜(UHP-110B，自Denki Kagaku Kogyo Kabushiki Kaisha)黏著到以聚矽氧為主的黏著劑層，並將薄膜切成具有190毫米直徑的同心圓片，達到自基膜至薄膜A延伸的一定深度，藉此，圓形部分適當保留，周邊部分移除。
因此獲得一種包括晶粒附著薄膜及基膜之複合薄膜，其 中以聚矽氧為主的黏著劑層直接與基膜接觸。以聚矽氧為主的黏著劑層和基膜間之剝落強度為14.7牛頓/米。
在薄膜於50℃經過熱熟化歷預定時間後，檢驗以聚矽氧為主的黏著劑層和基膜間之剝落強度變化。結果顯示於表1中。
下一步，自複合薄膜移除薄膜A，使支撐環附著到基膜的周邊，並由在80℃加壓使6英寸矽晶圓附著到以聚矽氧為主的黏著劑層。隨後，在40毫米/秒之進料速度及30,000轉/分鐘之旋轉速度，用自迪斯克公司的具有NBC-ZH2050-SE(27HEEE)刀片之切晶片機DAD-2H/6T將晶圓切成具有5毫米×5毫米晶片大小之晶片。以聚矽氧為主的黏著劑層與矽晶圓一起經歷切片。在切晶片期間未注意到晶片脫層。
緊在切晶片之後，與以聚矽氧為主的黏著劑層一起切片的矽晶圓晶片藉由擴展基膜撿拾，並由在150℃施加1兆帕壓力歷1秒鐘黏著到自宇部工業有限公司之UPIREX 125S，並且檢驗其黏著性能。以同樣方式，在切晶片後，使晶片在50℃經歷熱老化144小時，撿拾，並由在150℃施加1兆帕壓力歷1秒鐘黏著到自宇部工業有限公司之UPIREX 125S，並且檢驗其黏著性能。結果顯示於表1中。
[應用實例2]
晶粒附著薄膜(自道-科寧-托瑞聚矽氧公司的FA3010-25T)具有一種三層結構，其中薄膜A和薄膜B接合到以聚矽氧為主的黏著劑層之兩側，將該晶粒附著薄膜切成具有150毫米直徑之圓片，達到自一側上的薄膜B到另一側上的薄膜 A延伸之一定深度，藉此，具有150毫米直徑的圓形部分適當保留，餘者自半切薄膜A移除。
下一步，使具有在其上形成的感壓黏著劑材料層之基膜(UHP-110B，自Denki Kagaku Kogyo)黏著到已成形為具有150毫米直徑圓片的薄膜B，然後將其切成具有190毫米直徑的同心圓片，達到自基膜至薄膜A延伸的一定深度，藉此，圓形部分適當保留，周邊部分移除。
因此獲得一種包括晶粒附著薄膜及基膜之複合薄膜，其中薄膜B插在以聚矽氧為主的黏著劑層和基膜之間。
以聚矽氧為主的黏著劑層和薄膜B間之剝落強度為1.8牛頓/米，基膜和薄膜B間之剝落強度為125牛頓/米。
在薄膜於50℃經過熱熟化歷預定時間後，檢驗以聚矽氧為主的黏著劑層和薄膜B間之剝落強度變化。結果顯示於表1中。
下一步，自複合薄膜移除薄膜A，使支撐環附著到基膜的周邊，並由在80℃加壓使6英寸矽晶圓附著到以聚矽氧為主的黏著劑層。隨後，在40毫米/秒之進料速度及30,000轉/分鐘之旋轉速度，用自迪斯克公司的具有NBC-ZH2050-SE(27HEEE)刀片之切晶片機DAD-2H/6T將晶圓切成具有5毫米×5毫米晶片大小之晶片。以聚矽氧為主的黏著劑層與矽晶圓一起經歷切片。在切晶片期間未注意到晶片脫層。
緊在切晶片之後，與以聚矽氧為主的黏著劑層一起切片的矽晶圓晶片藉由擴展基膜撿拾，並由在150℃施加1兆帕壓力歷1秒鐘黏著到自宇部工業有限公司之UPIREX 125S，並且檢驗其黏著性能。以同樣方式，在切晶片後，使晶片在50℃經歷熱老化144小時，撿拾，並由在150℃施加1兆帕壓力歷1秒鐘黏著到自宇部工業有限公司之UPIREX 125S，並且檢驗其黏著性能。結果顯示於表1中。
[比較實例2]
晶粒附著薄膜(自道-科寧-托瑞聚矽氧公司的FA3010-25T)具有一種三層結構，其中薄膜A和薄膜B接合到以聚矽氧為主的黏著劑層之兩側，將該晶粒附著薄膜切成具有150毫米直徑之圓片，達到自一側上的薄膜B到另一側上的薄膜A延伸之一定深度，藉此，具有150毫米直徑的圓形部分適當保留，餘者自半切薄膜A移除。
下一步，移除已成形為具有150毫米直徑圓片的薄膜B，使具有在其上形成的感壓黏著劑材料層之基膜(UHP-110B，自Denki Kagaku Kogyo Kabushiki Kaisha)黏著到以聚矽氧為主的黏著劑層，並將薄膜切成具有190毫米直徑的同心圓片，達到自基膜至薄膜A延伸的一定深度，藉此，圓形部分適當保留，周邊部分移除。
因此獲得一種包括晶粒附著薄膜及基膜之複合薄膜，其中以聚矽氧為主的黏著劑層直接與基膜接觸。以聚矽氧為主的黏著劑層和基膜間之剝落強度為8.42牛頓/米。
在薄膜於50℃經過熱熟化歷預定時間後，檢驗以聚矽氧為主的黏著劑層和基膜間之剝落強度變化。結果顯示於表1中。
下一步，自複合薄膜移除薄膜A，使支撐環附著到基膜的 周邊，並由在80℃加壓使6英寸矽晶圓附著到以聚矽氧為主的黏著劑層。隨後，在40毫米/秒之進料速度及30,000轉/分鐘之旋轉速度，用自迪斯克公司的具有NBC-ZH2050-SE(27HEEE)刀片之切晶片機DAD-2H/6T將晶圓切成具有5毫米×5毫米晶片大小之晶片。以聚矽氧為主的黏著劑層與矽晶圓一起經歷切片。在切晶片期間未注意到晶片脫層。
緊在切晶片之後，與以聚矽氧為主的黏著劑層一起切片的矽晶圓晶片藉由擴展基膜撿拾，並由在150℃施加1兆帕壓力歷1秒鐘黏著到自宇部工業有限公司之UPIREX 125S，並且檢驗其黏著性能。以同樣方式，在切晶片後，使晶片在50℃經歷熱老化144小時，撿拾，並由在150℃施加1兆帕壓力歷1秒鐘黏著到自宇部工業有限公司之UPIREX 125S，並且檢驗其黏著性能。結果顯示於表1中。
[比較實例3]
晶粒附著薄膜(自道-科寧-托瑞聚矽氧公司的FA3010-25T)具有一種三層結構，其中薄膜A和薄膜B接合到以聚矽氧為主的黏著劑層之兩側，將該晶粒附著薄膜切成具有150毫米直徑之圓片，達到自一側上的薄膜B到另一側上的薄膜A延伸之一定深度，藉此，具有150毫米直徑的圓形部分適當保留，餘者自半切薄膜A移除。
下一步，移除已成形為具有150毫米直徑圓片的薄膜B，使不具有在其上形成的感壓黏著劑材料層之基膜(聚烯烴薄膜，自塔馬波利有限公司(Tamapoly Co.,Ltd.)黏著到以聚矽氧為主的黏著劑層，並將薄膜切成具有190毫米直徑的 同心圓片，達到自基膜至薄膜A延伸的一定深度，藉此，圓形部分適當保留，周邊部分移除。
因此獲得一種包括晶粒附著薄膜及基膜之複合薄膜，其中以聚矽氧為主的黏著劑層直接與基膜接觸。以聚矽氧為主的黏著劑層和基膜間之剝落強度為0.74牛頓/米。
在薄膜於50℃經過熱熟化歷預定時間後，檢驗以聚矽氧為主的黏著劑層和基膜間之剝落強度變化。結果顯示於表1中。
下一步，自複合薄膜移除薄膜A，使支撐環附著到基膜的周邊，並由在80℃加壓使6英寸矽晶圓附著到以聚矽氧為主的黏著劑層。隨後，在40毫米/秒之進料速度及30,000轉/分鐘之旋轉速度，用自迪斯克公司的具有NBC-ZH2050-SE(27HEEE)刀片之切晶片機DAD-2H/6T將晶圓切成具有5毫米×5毫米晶片大小之晶片。以聚矽氧為主的黏著劑層與矽晶圓一起經歷切片。在切晶片期間觀察到嚴重晶片脫層。
緊在切晶片之後，與以聚矽氧為主的黏著劑層一起切片的矽晶圓晶片藉由擴展基膜撿拾，並由在150℃施加1兆帕壓力歷1秒鐘黏著到自宇部工業有限公司之UPIREX 125S，並且檢驗其黏著性能。以同樣方式，在切晶片後，使晶片在50℃經歷熱老化144小時，撿拾，並由在150℃施加1兆帕壓力歷1秒鐘黏著到自宇部工業有限公司之UPIREX 125S，並且檢驗其黏著性能。結果顯示於表1中。
可自表1看出，在基膜和以聚矽氧為主的黏著劑層之間提供底塗層(薄膜B)防止晶片脫層，且使改良長期儲存穩定性成為可能。
[工業應用性]
本發明之切晶片/晶粒接合片具有與半導體晶圓和基膜有關的極佳黏著性能，防止在切晶片製程期間脫層，且具有極佳長期儲存穩定性。因此，本發明之切晶片/晶粒接合片能夠改良其製程中的半導體元件之產率。
1‧‧‧基膜
2‧‧‧底塗層
3‧‧‧以聚矽氧為主的黏著劑層
4‧‧‧保護層
5‧‧‧剝落層
6‧‧‧支撐環
7‧‧‧半導體晶圓
7a-7f‧‧‧IC晶片
8‧‧‧固定墊
9‧‧‧電路佈線
10‧‧‧接線
11‧‧‧熱阻樹脂
圖1包含本發明切晶片/晶粒接合片之具體實施例之橫截面圖。
圖2包含本發明切晶片/晶粒接合片之另一具體實施例之橫截面圖。
圖3包含本發明切晶片/晶粒接合片之製程之具體實施例 視圖。
圖4包含本發明切晶片/晶粒接合片之製程之另一具體實施例視圖。
圖5包含一橫截面圖，其中半導體晶圓已顯示接合到本發明之切晶片/晶粒接合片，且固定到支撐環(6)。
圖6包含正於本發明切晶片/晶粒接合片上切片的半導體晶圓之橫截面圖。
圖7包含正被拉伸的本發明切晶片/晶粒接合片及正自其撿拾的IC晶片之橫截面圖。
圖8包含顯示半導體元件之實例之橫截面圖，半導體元件包括具有用本發明切晶片/晶粒接合片獲得的以聚矽氧為主之黏著劑層之IC晶片。
1‧‧‧基膜
2‧‧‧底塗層
3‧‧‧以聚矽氧為主的黏著劑層

Claims (8)

  1. 一種在半導體晶圓切片之前黏著性接合到半導體晶圓之切晶片/晶粒接合片，其中該切晶片/晶粒接合片具有基膜、在上述基膜上形成的底塗層以及在上述底塗層上形成且具有黏著性接合到上述半導體晶圓的黏著表面之以聚矽氧為主之黏著劑單一層；上述底塗層係由有機物質製成，其係選自包含下列之群組：聚乙烯樹脂、聚丙烯樹脂、氟樹脂、聚對酞酸乙二醇酯(PET)樹脂、聚對酞酸丁二醇酯樹脂、聚醚醯亞胺樹脂、聚碸樹脂、聚醚碸(PES)樹脂、纖維素三乙酸酯(TAC)樹脂及其它纖維素樹脂、聚醯亞胺樹脂、聚酯樹脂、聚醚樹脂、聚醚酮樹脂、聚醚醚酮樹脂、環氧樹脂、聚醯胺樹脂、聚氧亞甲基樹脂、聚苯硫樹脂及其它有機樹脂，且具有允許其自上述以聚矽氧為主的黏著劑單一層剝落之性質；該上述以聚矽氧為主之黏著劑單一層可在接合到上述半導體晶圓之後自上述底塗層剝落。
  2. 根據請求項1之切晶片/晶粒接合片，其中該上述底塗層為由至少兩層組成之層合物。
  3. 根據請求項1之切晶片/晶粒接合片，其中該上述基膜具有不小於上述半導體晶圓之表面積。
  4. 根據請求項1之切晶片/晶粒接合片，其中該以聚矽氧為主之黏著劑單一層上係以可剝落保護層塗覆。
  5. 一種製備根據請求項1之切晶片/晶粒接合片之方法，其包括在基膜上形成底塗層及以聚矽氧為主的黏著劑單一層 之步驟；上述底塗層係由有機物質製成，其係選自包含下列之群組：聚乙烯樹脂、聚丙烯樹脂、氟樹脂、聚對酞酸乙二醇酯(PET)樹脂、聚對酞酸丁二醇酯樹脂、聚醚醯亞胺樹脂、聚碸樹脂、聚醚碸(PES)樹脂、纖維素三乙酸酯(TAC)樹脂及其它纖維素樹脂、聚醯亞胺樹脂、聚酯樹脂、聚醚樹脂、聚醚酮樹脂、聚醚醚酮樹脂、環氧樹脂、聚醯胺樹脂、聚氧亞甲基樹脂、聚苯硫樹脂及其它有機樹脂，且具有允許其自上述以聚矽氧為主的黏著劑單一層剝落之性質。
  6. 一種製備根據請求項1之切晶片/晶粒接合片之方法，其包括在剝落層上形成以聚矽氧為主的黏著劑單一層及底塗層之步驟，上述底塗層係由有機物質製成，其係選自包含下列之群組：聚乙烯樹脂、聚丙烯樹脂、氟樹脂、聚對酞酸乙二醇酯(PET)樹脂、聚對酞酸丁二醇酯樹脂、聚醚醯亞胺樹脂、聚碸樹脂、聚醚碸(PES)樹脂、纖維素三乙酸酯(TAC)樹脂及其它纖維素樹脂、聚醯亞胺樹脂、聚酯樹脂、聚醚樹脂、聚醚酮樹脂、聚醚醚酮樹脂、環氧樹脂、聚醯胺樹脂、聚氧亞甲基樹脂、聚苯硫樹脂及其它有機樹脂，且具有允許其自上述以聚矽氧為主的黏著劑單一層剝落之性質；以及施加基膜到上述底塗層之表面之步驟以及剝離上述剝落層之步驟。
  7. 根據請求項6之製備切晶片/晶粒接合片之方法，其進一步包括在剝離上述剝落層之步驟之後於上述以聚矽氧為主的黏著劑單一層上形成可剝落保護層之步驟。
  8. 一種製備根據請求項4之製備切晶片/晶粒接合片之方法，其包括在可剝離保護層上形成以聚矽氧為主的黏著劑單一層及底塗層之步驟，以及施加基膜到上述底塗層之表面之步驟；上述底塗層係由有機物質製成，其係選自包含下列之群組：聚乙烯樹脂、聚丙烯樹脂、氟樹脂、聚對酞酸乙二醇酯(PET)樹脂、聚對酞酸丁二醇酯樹脂、聚醚醯亞胺樹脂、聚碸樹脂、聚醚碸(PES)樹脂、纖維素三乙酸酯(TAC)樹脂及其它纖維素樹脂、聚醯亞胺樹脂、聚酯樹脂、聚醚樹脂、聚醚酮樹脂、聚醚醚酮樹脂、環氧樹脂、聚醯胺樹脂、聚氧亞甲基樹脂、聚苯硫樹脂及其它有機樹脂，且具有允許其自上述以聚矽氧為主的黏著劑單一層剝落之性質。
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