TWI456337B - 用於計算結構之電磁散射特性及用於近似結構之重建之方法及裝置 - Google Patents

用於計算結構之電磁散射特性及用於近似結構之重建之方法及裝置 Download PDF

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TWI456337B
TWI456337B TW101109958A TW101109958A TWI456337B TW I456337 B TWI456337 B TW I456337B TW 101109958 A TW101109958 A TW 101109958A TW 101109958 A TW101109958 A TW 101109958A TW I456337 B TWI456337 B TW I456337B
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Beurden Martijn Constant Van
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    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
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    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
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    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
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Claims (15)

  1. 一種計算一結構之電磁散射特性之方法，該結構包括不同特性之材料以便在一材料邊界處引起一電磁場的至少一不連續性，該方法包含：(a)藉由判定一對比電流密度之分量(components)來數值上對該對比電流密度的一體積積分方程式求解(numerically solving)，該判定藉由使用一場-材料相互作用運算子(field-material interaction operator)來對該電磁場之一連續分量及對應於該電磁場之一按比例調整(scaled)之電磁通量密度的一連續分量進行運算來進行，該按比例調整之電磁通量密度作為該電磁場及該對比電流密度之不連續分量的一按比例調整和而形成，其中該場-材料相互作用運算子在至少一個方向上包括該結構的材料及幾何形狀特性；及(b)使用該對比電流密度之該等所判定分量來計算該結構之電磁散射特性。
  2. 如請求項1之方法，其進一步包含以下步驟：(a)使用一第一連續分量提取運算子來提取該電磁場之該連續分量；及(b)使用一第二連續分量提取運算子來提取該按比例調整之電磁通量密度的該連續分量，其中該場-材料相互作用運算子對該等所提取之連續分量進行運算。
  3. 如請求項1或2之方法，其中該結構在至少一個方向上為 週期性的，且該電磁場之該連續分量、該按比例調整之電磁通量密度的該連續分量、該對比電流密度之該等分量及該場-材料相互作用運算子關於該至少一個方向藉由至少一個各別有限傅立葉級數表示於光譜域中，且該方法進一步包含藉由傅立葉係數之計算來判定該場-材料相互作用運算子的係數。
  4. 如請求項1或2之方法，其進一步包含自該電磁場之該連續分量及該按比例調整之電磁通量密度之該連續分量形成在該材料邊界處連續的一向量場，且其中藉由使用一場-材料相互作用運算子對該向量場進行運算來執行判定該對比電流密度之分量的該步驟。
  5. 如請求項4之方法，其進一步包含：(a)在關於該材料邊界而界定的該結構之一區中產生一局部化法向向量場；(b)藉由使用該法向向量場以選擇與該材料邊界相切之該電磁場之連續分量及選擇垂直於該材料邊界之一相應電磁通量密度的連續分量來建構該向量場；(c)在該區上執行該法向向量場之一局部化積分以判定該場-材料相互作用運算子的係數。
  6. 如請求項1或2之方法，其進一步包含：(a)在關於該材料邊界而界定的該結構之一區中產生一局部化法向向量場；(b)使用該法向向量場選擇垂直於該材料邊界的該電磁場之該等不連續分量及垂直於該材料邊界的該對比 電流密度之該等不連續分量；(c)在該區上執行該法向向量場之一局部化積分以判定該場-材料相互作用運算子的係數。
  7. 如請求項5之方法，其中產生該局部化法向向量場的該步驟包含：按比例調整該等連續分量中的至少一者。
  8. 如請求項5之方法，其中產生該局部化法向向量場的該步驟包含：直接對該向量場使用一變換運算子以將該向量場自取決於該法向向量場之一基礎變換至獨立於該法向向量場的一基礎。
  9. 如請求項5之方法，其中產生一局部化法向向量場的該步驟包含將該區分解成各自具有一各別法向向量場的複數個子區，且執行一局部化積分的該步驟包含在該等子區中之每一者的該各別法向向量場上進行積分。
  10. 如請求項5之方法，其進一步包含在該局部化法向向量場得以產生且對於該材料邊界為局部的該區中使用垂直於該材料邊界之電容率的一分量及與該材料邊界相切之電容率之至少一個其他不同分量而使該電磁通量密度與該電磁場相關。
  11. 一種自因藉由輻射對一物件進行之照明(illumination)而產生的一偵測到之電磁散射特性重建該物件之一近似結構之方法，該方法包含以下步驟：(a)估計至少一個結構參數；(b)自該至少一個結構參數判定至少一個模型電磁散射特性； (c)比較該偵測到之電磁散射特性與該至少一個模型電磁散射特性；及(d)基於該比較之結果判定一近似物件結構，(e)其中使用一如請求項1至10中任一項之方法來判定該模型電磁散射特性。
  12. 如請求項11之方法，其進一步包含將複數個該等模型電磁散射特性配置於一庫中的步驟，且比較的該步驟包含使該偵測到之電磁散射特性與該庫之內容匹配。
  13. 如請求項11或12之方法，其進一步包含反覆判定至少一個模型電磁散射特性的該步驟及比較該偵測到之電磁散射特性的該步驟，其中基於一先前反覆中之比較的該步驟的該結果來修正該結構參數。
  14. 一種用於重建一物件之一近似結構之檢驗裝置，該檢驗裝置包含：(a)一照明系統，該照明系統經組態以藉由輻射照明該物件；(b)一偵測系統，該偵測系統經組態以偵測因該照明而產生之一電磁散射特性；及(c)一處理器，該處理器經組態以：(i)估計至少一個結構參數；(ii)自該至少一個結構參數判定至少一個模型電磁散射特性；(iii)比較該偵測到之電磁散射特性與該至少一個模型電磁散射特性；且 (iv)自該偵測到之電磁散射特性與該至少一個模型電磁散射特性之間的一差判定一近似物件結構，其中該處理器經組態以使用一如請求項1至10中任一項之方法來判定該模型電磁散射特性。
  15. 一種含有用於計算一結構之電磁散射特性的一或多個序列之機器可讀指令之電腦程式產品，該等指令經調適以使一或多個處理器執行一如請求項1至10中任一項之方法。
TW101109958A 2011-03-23 2012-03-22 用於計算結構之電磁散射特性及用於近似結構之重建之方法及裝置 TWI456337B (zh)

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