TWI455174B - Field emission light source and liquid crystal display - Google Patents
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本申請案是有關於一種光源，且特別是關於一種場發射光源。This application relates to a light source, and more particularly to a field emission source.
顯示器在人們現今生活中的重要性日益增加，除了使用電腦或網際網路外，電視機、手機、個人數位助理(PDA)、數位相機等，均須透過顯示器控制來傳遞訊息。相較於傳統映像管顯示器，新世代的平面顯示器具有重量輕、體積小、及符合人體健康的優點。The importance of displays in people's lives is increasing. In addition to computers or the Internet, televisions, mobile phones, personal digital assistants (PDAs), digital cameras, etc., must transmit messages through display controls. Compared to traditional image tube displays, the new generation of flat panel displays have the advantages of light weight, small size, and human health.
在眾多新興的平面顯示器技術中，場發射顯示器(Field Emission Display，FED)不僅擁有傳統映像管高畫質的優點，且相較於液晶顯示器，場發射顯示器具有較短的光學反應時間(Optical Response Time)，而幾乎不會產生殘影。亦即，與液晶顯示器相較之下，場發射顯示器具有更高的顯示品質。此外，場發射顯示器還具有厚度薄、重量輕、視角廣、亮度高、工作溫度範圍較大以及省能源等優點，因此場發射顯示器已經逐漸受到全球業者之矚目。Among many emerging flat panel display technologies, Field Emission Display (FED) not only has the advantages of traditional image tube high image quality, but also has a short optical response time compared to liquid crystal displays (Optical Response) Time), and almost no afterimages. That is, the field emission display has higher display quality than the liquid crystal display. In addition, field emission displays have the advantages of thin thickness, light weight, wide viewing angle, high brightness, large operating temperature range and energy saving. Therefore, field emission displays have gradually attracted the attention of the global industry.
一般而言，場發射顯示器主要由電極(陰極、陽極、閘極)、電子發射層以及螢光粉所組成，其中陰極以及陽極上下相對，閘極配置於陰極旁，電子發射層配置於陰極上且位於陰極以及陽極之間，而螢光粉配置於陽極上且位於陰極以及陽極之間。藉由施予閘極電壓以誘發電子從位 於陰極上的電子發射層射出，電子射出後受到陽極與閘極正電壓差的加速，而撞擊螢光粉並產生所謂的陰極螢光(Cathodoluminescence)，此陰極螢光即可作為顯示器之背光源。In general, a field emission display is mainly composed of an electrode (cathode, anode, gate), an electron emission layer, and a phosphor powder, wherein the cathode and the anode are opposed to each other, the gate is disposed beside the cathode, and the electron emission layer is disposed on the cathode. And between the cathode and the anode, and the phosphor powder is disposed on the anode and between the cathode and the anode. Inducing electrons from the bit by applying a gate voltage The electron emission layer on the cathode is emitted, and the electron is emitted and accelerated by the positive voltage difference between the anode and the gate, and the phosphor powder is struck and the so-called cathode fluorescent light is generated, and the cathode fluorescent light can be used as the backlight of the display. .
在節能與環保的需求下，於點亮顯示器的畫面時，可將整個顯示器切割成M＊ N個區塊，並且依據每一區塊的影像內容，而對每一區塊所對應的背光源亮度進行調整(即局部點亮(local dimming)技術)，以節能省電，同時更能增進畫面的對比度(contrast ratio)。然而，現行場發射顯示器的電極設計並無法做到局部點亮的技術。Under the demand of energy saving and environmental protection, when lighting the screen of the display, the entire display can be cut into M * N blocks, and the backlight corresponding to each block according to the image content of each block The brightness is adjusted (ie, local dimming technique) to save energy and save the contrast ratio of the picture. However, the electrode design of current field emission displays is not capable of local illumination.
本申請案提供一種場發射光源，其可達到局部點亮的效果。The present application provides a field emission light source that achieves the effect of partial illumination.
本申請案提供一種液晶顯示器，其可節能省電。The application provides a liquid crystal display that can save energy and save power.
本申請案提供一種場發射光源，包括一第一基板、多個條狀第一電極、多個電子發射層、多對閘極、一第二基板、一第二電極以及一螢光層。彼此電性連接之條狀第一電極配置於第一基板上，以於第一基板定義出多個條狀區域，其中各條狀區域包括多個子區域。電子發射層配置於條狀第一電極上。多對閘極配置於第一基板上，其中各對閘極分別位於其中一個子區域內，且各閘極分別鄰近於條狀第一電極配置。第二電極配置於第二基板上。螢光層配置於第二電極上，且位於第二電極與第一基板之間。The present application provides a field emission light source including a first substrate, a plurality of strip-shaped first electrodes, a plurality of electron-emitting layers, a plurality of pairs of gates, a second substrate, a second electrode, and a phosphor layer. The strip-shaped first electrodes electrically connected to each other are disposed on the first substrate to define a plurality of strip regions on the first substrate, wherein each strip region includes a plurality of sub-regions. The electron emission layer is disposed on the strip-shaped first electrode. The plurality of pairs of gates are disposed on the first substrate, wherein each pair of gates is respectively located in one of the sub-regions, and each of the gates is disposed adjacent to the strip-shaped first electrode. The second electrode is disposed on the second substrate. The phosphor layer is disposed on the second electrode and located between the second electrode and the first substrate.
在本申請案之一實施例中，前述之條狀第一電極彼此平行排列於第一基板上。In an embodiment of the present application, the strip-shaped first electrodes are arranged in parallel with each other on the first substrate.
在本申請案之一實施例中，前述之各子區域為一矩形區域。In an embodiment of the present application, each of the foregoing sub-regions is a rectangular region.
在本申請案之一實施例中，前述之相鄰之二條狀第一電極之間的間距為D1，而各閘極與相鄰的條狀第一電極之間的最短距離為D2，且D1與D2滿足下列關係：5x10-7 D2/D12x10-4 。In an embodiment of the present application, the spacing between the adjacent two strip-shaped first electrodes is D1, and the shortest distance between each gate and the adjacent strip-shaped first electrode is D2, and D1 Meet the following relationship with D2: 5x10 -7 D2/D1 2x10 -4 .
在本申請案之一實施例中，前述之各條狀第一電極至第二電極的最短距離為D3，且D2與D3滿足下列關係：2.5x10-7 D2/D31x10-3 。In an embodiment of the present application, the shortest distance from each of the strip-shaped first electrodes to the second electrodes is D3, and D2 and D3 satisfy the following relationship: 2.5×10 -7 D2/D3 1x10 -3 .
在本申請案之一實施例中，前述之電子發射層包括碳奈米管層。In an embodiment of the present application, the aforementioned electron emission layer comprises a carbon nanotube layer.
在本申請案之一實施例中，前述之閘極的延伸方向實質上平行於條狀第一電極的延伸方向。In an embodiment of the present application, the extending direction of the gate is substantially parallel to the extending direction of the strip-shaped first electrode.
在本申請案之一實施例中，前述之第二電極為一透明電極，且第二基板為一透明基板。In an embodiment of the present application, the second electrode is a transparent electrode, and the second substrate is a transparent substrate.
在本申請案之一實施例中，前述之第二電極為一反射電極。In an embodiment of the present application, the second electrode is a reflective electrode.
在本申請案之一實施例中，前述之反射電極包括一電極層以及一反射層。反射層配置於電極層上，其中反射層位於電極層與螢光層之間。In an embodiment of the present application, the foregoing reflective electrode includes an electrode layer and a reflective layer. The reflective layer is disposed on the electrode layer, wherein the reflective layer is located between the electrode layer and the phosphor layer.
在本申請案之一實施例中，前述之場發射光源，更包括多條導線，其中導線與閘極電性連接，且導線分佈於子 區域內。In an embodiment of the present application, the field emission light source further includes a plurality of wires, wherein the wires are electrically connected to the gates, and the wires are distributed in the sub- within the area.
本申請案另提供一種液晶顯示器，包括一液晶顯示面板以及前述之場發射光源，其中場發射光源位於液晶顯示面板下方。The present application further provides a liquid crystal display comprising a liquid crystal display panel and the aforementioned field emission light source, wherein the field emission light source is located below the liquid crystal display panel.
在本申請案之一實施例中，前述之液晶顯示面板包括一穿透式液晶顯示面板或一半穿透半反射式液晶顯示面板。In an embodiment of the present application, the foregoing liquid crystal display panel comprises a transmissive liquid crystal display panel or a transflective liquid crystal display panel.
基於上述，本申請案在條狀第一電極所劃分的條狀區域內設置多對閘極，且各對電極設置於其中一個子區域內，透過獨立驅動各個子區域內的一對閘極，以局部誘發各個子區域內的電子，使各個子區域上的螢光層可被分別點亮。是以，本申請案之場發射光源可達到局部點亮的效果，且使用此場發射光源之液晶顯示器可以較為節能省電。Based on the above, in the present application, a plurality of pairs of gates are disposed in a strip-shaped region defined by the strip-shaped first electrodes, and each pair of electrodes is disposed in one of the sub-regions, and a pair of gates in each sub-region are independently driven. The electrons in each sub-area are locally induced so that the phosphor layers on the respective sub-areas can be individually illuminated. Therefore, the field emission light source of the present application can achieve the effect of partial lighting, and the liquid crystal display using the field emission light source can save energy and save power.
為讓本申請案之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above-described features and advantages of the present application will become more apparent and understood.
圖1為本申請案一實施例之場發射光源的剖面示意圖。請參照圖1，本實施例之場發射光源100包括一第一基板110、多個條狀第一電極120、多個電子發射層130、多對閘極140、一第二基板150、一第二電極160以及一螢光層170。1 is a cross-sectional view of a field emission light source according to an embodiment of the present application. Referring to FIG. 1 , the field emission light source 100 of the present embodiment includes a first substrate 110 , a plurality of strip-shaped first electrodes 120 , a plurality of electron emission layers 130 , a plurality of pairs of gates 140 , a second substrate 150 , and a first Two electrodes 160 and a phosphor layer 170.
條狀第一電極120配置於第一基板110上。電子發射層130配置於條狀第一電極120上。在本實施例中，電子 發射層130例如是奈米碳管(Carbon Nano-Tube,CNT)。在其他實施例中，電子發射層130的發射源也可以是點發射源、鍥形發射源、薄膜非晶形鑽石發射源、薄膜邊緣發射源、表面電子發射源或邊緣電子發射源。The strip-shaped first electrode 120 is disposed on the first substrate 110. The electron emission layer 130 is disposed on the strip first electrode 120. In this embodiment, the electron The emission layer 130 is, for example, a Carbon Nano-Tube (CNT). In other embodiments, the emission source of the electron emission layer 130 may also be a point emission source, a dome-shaped emission source, a thin film amorphous diamond emission source, a thin film edge emission source, a surface electron emission source, or an edge electron emission source.
多對閘極140配置於第一基板110上，其中各閘極140分別鄰近於條狀第一電極120配置。在本實施例中，閘極140與第一電極120位於同一平面。然而，在其他實施例中，閘極140亦可配置於第一電極120的上方或下方。The plurality of pairs of gates 140 are disposed on the first substrate 110, wherein the gates 140 are respectively disposed adjacent to the strip-shaped first electrodes 120. In this embodiment, the gate 140 is in the same plane as the first electrode 120. However, in other embodiments, the gate 140 may also be disposed above or below the first electrode 120.
第二電極160配置於第二基板150上。螢光層170配置於第二電極160上，並位於第二電極160與第一基板110之間。在本實施例中，條狀第一電極120例如是陰極，而第二電極160例如是陽極，但條狀第一電極120與第二電極160之陰、陽極需視設計上的需求而定。The second electrode 160 is disposed on the second substrate 150. The phosphor layer 170 is disposed on the second electrode 160 and located between the second electrode 160 and the first substrate 110. In the present embodiment, the strip-shaped first electrode 120 is, for example, a cathode, and the second electrode 160 is, for example, an anode, but the anode and the anode of the strip-shaped first electrode 120 and the second electrode 160 are determined according to design requirements.
圖2為圖1實施例之場發射光源100的上視示意圖。為清楚繪示場發射光源100各膜層之相對配置關係，圖2省略繪示圖1中之第二基板150、第二電極160以及螢光層170。請參照圖2，條狀第一電極120彼此電性連接。在本實施例中，條狀第一電極120例如是透過一連接電極122彼此電性連接。連接電極122例如沿一第一方向X延伸，而條狀第一電極120例如是沿一第二方向Y延伸，且條狀第一電極120彼此沿第一方向X平行排列於第一基板110上。本實施例之第一方向X以垂直於第二方向Y作為舉例說明，但本申請案不以此為限。2 is a top plan view of the field emission source 100 of the embodiment of FIG. 1. To clearly illustrate the relative arrangement relationship of the film layers of the field emission light source 100, the second substrate 150, the second electrode 160, and the phosphor layer 170 of FIG. 1 are omitted from FIG. Referring to FIG. 2, the strip-shaped first electrodes 120 are electrically connected to each other. In the present embodiment, the strip-shaped first electrodes 120 are electrically connected to each other through a connection electrode 122, for example. The connecting electrode 122 extends, for example, in a first direction X, and the strip-shaped first electrode 120 extends, for example, in a second direction Y, and the strip-shaped first electrodes 120 are arranged in parallel with each other along the first direction X on the first substrate 110. . The first direction X of the embodiment is illustrated as being perpendicular to the second direction Y, but the present application is not limited thereto.
條狀第一電極120配置於第一基板110上，以於第一 基板110定義出多個條狀區域S，其中各條狀區域S包括多個子區域S1、S2、S3。需說明的是，本實施例僅以三個子區域S1、S2、S3為例進行說明，但本申請案不以此為限。另外，在本實施例中，各子區域S1、S2、S3例如是一矩形區域。The strip-shaped first electrode 120 is disposed on the first substrate 110 for the first The substrate 110 defines a plurality of strip regions S, wherein each strip region S includes a plurality of sub-regions S1, S2, S3. It should be noted that, in this embodiment, only three sub-regions S1, S2, and S3 are taken as an example, but the present application is not limited thereto. Further, in the present embodiment, each of the sub-regions S1, S2, and S3 is, for example, a rectangular region.
各對閘極140分別位於條狀區域S的其中一個子區域S1、S2、S3內。此外，閘極140的延伸方向實質上平行於條狀第一電極120的延伸方向(即第二方向Y)。另外，本實施例之場發射光源100可進一步包括多條導線180以及多個閘極接墊182。導線180與閘極140電性連接，且導線180分佈於子區域S1、S2、S3內，而閘極接墊182沿第一方向X平行排列於第一基板110上，且閘極接墊182適於與閘極驅動晶片接合。Each pair of gates 140 is located in one of the sub-regions S1, S2, S3 of the strip-shaped region S, respectively. Further, the extending direction of the gate 140 is substantially parallel to the extending direction of the strip-shaped first electrode 120 (ie, the second direction Y). In addition, the field emission light source 100 of the embodiment may further include a plurality of wires 180 and a plurality of gate pads 182. The wire 180 is electrically connected to the gate 140, and the wires 180 are distributed in the sub-regions S1, S2, and S3, and the gate pads 182 are arranged in parallel along the first direction X on the first substrate 110, and the gate pads 182. Suitable for bonding with a gate drive wafer.
更詳細而言，各閘極接墊182分別與其中一條導線180連接，而各導線分別連接其中一個閘極140，其中位於同一個子區域S1(或子區域S2、S3)內的一對閘極140可連接至相同或不同的閘極接墊182。舉例而言，位於子區域S1中之閘極140a、140b透過導線180連接至相同的閘極接墊182，而位於子區域S3中之閘極140c、140d被導線180連接至不同的閘極接墊182。在此種設置下，可減少閘極接墊182的設置，進而可增加各條狀區域S可劃分出之子區域的數量。但本申請案並不用以限定與各對閘極電性連接之閘極接墊182的數量。在其他實施例中，位於子區域S1中之閘極140a、140b亦可透過導線180連接至 不同的閘極接墊182。In more detail, each of the gate pads 182 is connected to one of the wires 180, and each of the wires is connected to one of the gates 140, wherein a pair of gates in the same sub-region S1 (or sub-regions S2, S3) The poles 140 can be connected to the same or different gate pads 182. For example, the gates 140a, 140b in the sub-region S1 are connected to the same gate pad 182 through the wires 180, and the gates 140c, 140d in the sub-region S3 are connected to different gates by the wires 180. Pad 182. With this arrangement, the arrangement of the gate pads 182 can be reduced, and the number of sub-regions that can be divided by the strip regions S can be increased. However, the present application is not intended to limit the number of gate pads 182 electrically connected to each pair of gates. In other embodiments, the gates 140a, 140b located in the sub-region S1 may also be connected to the via 180 Different gate pads 182.
以下將對場發射光源100之發光原理搭配圖1以及圖3作進一步地說明。圖3為圖2中其中一個子區域S1的放大示意圖。請參照圖1及圖3，當位於同一個子區域S1(或子區域S2、S3)內的一對閘極140a、140b被輸入電壓時(例如是被輸入相等的電位，其中閘極140a、140b的電位會高於電子發射層130a、130b的電位)，左側的電子發射層130a會受到子區域S1中左側的閘極140a所誘發，而放出的電子e。閘極140a以及第二電極160之高電位的吸引會沿著軌跡S100往子區域S1中心處上方的螢光層170加速。更具體而言，電子e會往區域S1b上方處的螢光層170加速，並撞擊位於區域S1b上方的螢光層170。The principle of illumination of the field emission source 100 will be further described below in conjunction with FIGS. 1 and 3. FIG. 3 is an enlarged schematic view of one of the sub-regions S1 of FIG. 2. Referring to FIG. 1 and FIG. 3, when a pair of gates 140a, 140b located in the same sub-region S1 (or sub-regions S2, S3) are input with a voltage (for example, an equal potential is input, wherein the gate 140a, The potential of 140b is higher than the potential of the electron-emitting layers 130a, 130b, and the electron-emitting layer 130a on the left side is induced by the gate 140a on the left side in the sub-region S1, and the emitted electrons e. The attraction of the high potential of the gate 140a and the second electrode 160 is accelerated along the trajectory S100 toward the phosphor layer 170 above the center of the sub-region S1. More specifically, the electrons e will accelerate toward the phosphor layer 170 above the region S1b and strike the phosphor layer 170 located above the region S1b.
同理，右側的電子發射層130b會受到子區域S1中右側的閘極140b所誘發，而放出的電子e。電子e受到閘極140b以及第二電極160之高電位的吸引會沿著軌跡S200往子區域S1中心處上方的螢光層170加速。更具體而言，電子e會往區域S1a上方處的螢光層170加速，並撞擊位於區域S1a上方的螢光層170。藉由獨立驅動各個子區域S1、S2、S3區域內的一對閘極140，本實施例之場發射光源100可分別對各子區域S1、S2、S3所對應的光源亮度進行調整，進而達到局部點亮以及節能省電的效果。Similarly, the electron-emitting layer 130b on the right side is induced by the gate 140b on the right side in the sub-region S1, and the emitted electrons e. The attraction of the electrons e by the high potential of the gate 140b and the second electrode 160 accelerates along the trajectory S200 toward the phosphor layer 170 above the center of the sub-region S1. More specifically, the electrons e will accelerate toward the phosphor layer 170 above the region S1a and strike the phosphor layer 170 located above the region S1a. The field emission light source 100 of the present embodiment can separately adjust the brightness of the light source corresponding to each of the sub-regions S1, S2, and S3 by independently driving a pair of gates 140 in the respective sub-regions S1, S2, and S3. Partial lighting and energy saving.
需說明的是，電子的軌跡與相鄰之二條狀第一電極120之間的間距D1、各閘極140與相鄰的條狀第一電極120之間的最短距離D2以及各條狀第一電極120至第二電極 160的最短距離D3相關。在本實施例中，間距D1例如是介於5毫米至100毫米之間，最短距離D2例如是介於50奈米至1000奈米之間，而最短距離D3例如是介於1公分至20公分之間。換言之，最短距離D2與間距D1的比值D2/D1例如是介於5x10-7 D2/D12x10-4 之間，而最短距離D2與最短距離D3的比值D2/D3例如是介於2.5x10-7 D2/D31x10-3 之間。此外，電子的軌跡亦與施加於閘極140a、140b以及第二電極160之電壓有關，此領域具有通常知識者可以依據施加於閘極140a、140b以及第二電極160之電壓，調整前述之比值D2/D1與比值D2/D3。It should be noted that the distance between the track of the electron and the adjacent two strip-shaped first electrodes 120, the shortest distance D2 between the gates 140 and the adjacent strip-shaped first electrodes 120, and the first strips The shortest distance D3 of the electrode 120 to the second electrode 160 is related. In the present embodiment, the pitch D1 is, for example, between 5 mm and 100 mm, and the shortest distance D2 is, for example, between 50 nm and 1000 nm, and the shortest distance D3 is, for example, 1 cm to 20 cm. between. In other words, the ratio D2/D1 of the shortest distance D2 to the pitch D1 is, for example, 5x10 -7 D2/D1 Between 2x10 -4 , and the ratio D2/D3 of the shortest distance D2 to the shortest distance D3 is, for example, 2.5x10 -7 D2/D3 Between 1x10 and 3 . In addition, the trajectory of the electrons is also related to the voltages applied to the gates 140a, 140b and the second electrode 160. Those skilled in the art can adjust the ratio according to the voltage applied to the gates 140a, 140b and the second electrode 160. D2/D1 and the ratio D2/D3.
前述實施例之場發射光源100可作為液晶顯示器的背光源。更具體而言，液晶顯示器可包括一場發射光源以及一液晶顯示面板，其中場發射光源位於顯示面板的下方。液晶顯示面板可以是一穿透式液晶顯示面板或一半穿透半反射式液晶顯示面板。以下針對不同種類之顯示面板搭配圖4A及圖4B進行說明。圖4A及圖4B繪示不同顯示面板下場發射光源對應的配置。The field emission light source 100 of the foregoing embodiment can be used as a backlight of a liquid crystal display. More specifically, the liquid crystal display may include a field emission light source and a liquid crystal display panel, wherein the field emission light source is located below the display panel. The liquid crystal display panel can be a transmissive liquid crystal display panel or a transflective liquid crystal display panel. Hereinafter, different types of display panels will be described with reference to FIGS. 4A and 4B. 4A and 4B illustrate configurations corresponding to field emission sources of different display panels.
請參照圖4A，本實施例之液晶顯示器10包括一穿透式液晶顯示面板410a以及位於穿透式液晶顯示面板410a下的場發射光源420a，其中場發射光源420a例如是應用前述實施例之場發射光源100。在本實施例中，第二電極160為一透明電極，且第二基板150為一透明基板。當閘極140誘發電子發射層130放出電子e後，電子e會受到第二電極160及閘極140的加速而撞擊螢光層170並放出 光線L。此光線L及可作為穿透式液晶顯示面板410a的背光源。Referring to FIG. 4A, the liquid crystal display 10 of the present embodiment includes a transmissive liquid crystal display panel 410a and a field emission light source 420a under the transmissive liquid crystal display panel 410a, wherein the field emission light source 420a is, for example, a field to which the foregoing embodiment is applied. The light source 100 is emitted. In this embodiment, the second electrode 160 is a transparent electrode, and the second substrate 150 is a transparent substrate. When the gate 140 induces the electron emission layer 130 to emit electrons e, the electrons e are accelerated by the second electrode 160 and the gate 140 to collide with the phosphor layer 170 and emit Light L. This light L and can serve as a backlight for the transmissive liquid crystal display panel 410a.
請參照圖4B，本實施例之液晶顯示器20以一半穿透半反射式液晶顯示面板410b以及位於穿透式液晶顯示面板410b下的場發射光源420b作為舉例說明，其中穿透式式顯示面板的機制如圖4A所述，圖4B僅繪示說明反射式液晶顯示面板的機制。本實施例之場發射光源420b與前述實施例之場發射光源100具有相似的結構，其中兩者主要差異處在於第一基板110是位半穿透半反射式液晶顯示面板410b與第二基板150之間。此外，場發射光源420b之第二電極160a為一反射電極。反射電極包括一電極層162以及一反射層164。反射層164配置於電極層162上，並位於電極層162與螢光層170之間。在本實施例中，反射層164例如是鋁，但本申請案不以此為限。Referring to FIG. 4B, the liquid crystal display 20 of the present embodiment is exemplified by a transflective liquid crystal display panel 410b and a field emission light source 420b located under the transmissive liquid crystal display panel 410b, wherein the transmissive display panel is exemplified. The mechanism is as described in FIG. 4A, and FIG. 4B only illustrates the mechanism of the reflective liquid crystal display panel. The field emission light source 420b of the present embodiment has a similar structure to the field emission light source 100 of the foregoing embodiment, wherein the main difference between the two is that the first substrate 110 is a transflective liquid crystal display panel 410b and a second substrate 150. between. In addition, the second electrode 160a of the field emission light source 420b is a reflective electrode. The reflective electrode includes an electrode layer 162 and a reflective layer 164. The reflective layer 164 is disposed on the electrode layer 162 and between the electrode layer 162 and the phosphor layer 170. In the present embodiment, the reflective layer 164 is, for example, aluminum, but the application is not limited thereto.
當閘極140誘發電子發射層130放出電子e後，電子e會受到第二電極160a及閘極140的加速而撞擊螢光層170並放出光線L。此光線L會被反射並傳遞至半穿透半反射式液晶顯示面板410b作為半穿透半反射式液晶顯示面板410b的背光源。When the gate 140 induces the electron emission layer 130 to emit electrons e, the electrons e are accelerated by the second electrode 160a and the gate 140 to strike the phosphor layer 170 and emit light L. This light L is reflected and transmitted to the transflective liquid crystal display panel 410b as a backlight of the transflective liquid crystal display panel 410b.
圖5為本申請案一實施例之驅動電路的示意圖。特別是，圖5之驅動電路可應用在圖4B中之場發射光源420b的驅動。請參照圖4B及圖5，圖4B實施例中第一基板110上不透光的金屬圖案(包括條狀第一電極120、閘極140、導線180以及閘極接墊182)位於半穿透半反射式液晶顯 示面板410b與螢光層170之間。因此，在螢光層170被電子e撞擊而放出光線L後，光線L需穿過此些不透光的金屬圖案而照射至半穿透半反射式液晶顯示面板410b。如此一來，部份的光線L會受到不透光的金屬圖案遮蔽，而導致發射光源100的出光亮度下降。此外，在本實施例中，越鄰近閘極接墊182處的導線180越為密集。換言之，各個子區域S1、S2、S3的開口率(aperture ratio)下降的程度會隨著與閘極接墊182鄰近的程度而改變(例如是導線180越密集的子區域開口率下降越多)，進而降低了場發射光源100之出光均勻性。FIG. 5 is a schematic diagram of a driving circuit according to an embodiment of the present application. In particular, the drive circuit of Figure 5 can be applied to the drive of the field emission source 420b of Figure 4B. Referring to FIG. 4B and FIG. 5 , the metal pattern (including the strip-shaped first electrode 120 , the gate 140 , the wire 180 , and the gate pad 182 ) on the first substrate 110 in the embodiment of FIG. 4B is semi-transparent. Semi-reflective liquid crystal display The display panel 410b is between the fluorescent layer 170. Therefore, after the fluorescent layer 170 is struck by the electrons e to emit the light L, the light L is irradiated to the transflective liquid crystal display panel 410b through the opaque metal patterns. As a result, part of the light L is blocked by the opaque metal pattern, and the brightness of the light emitted from the light source 100 is lowered. Moreover, in the present embodiment, the closer the wires 180 are to the gate pads 182, the denser they are. In other words, the degree of decrease in the aperture ratio of each of the sub-regions S1, S2, and S3 may vary depending on the extent to which the gate pads 182 are adjacent (for example, the denser the sub-regions of the wires 180, the more the aperture ratio decreases) Thereby, the light uniformity of the field emission light source 100 is reduced.
在本實施例中，透過脈衝寬度調變(Pulse Width Modulation,PWM)PWM搭配金屬氧化物半導體場效電晶體(Metal-Oxide-Semiconductor Field Effect Transistor,MOSFET)MOSFET的快速開關方式進行設計，即可進行單點亮度的調整而不影響電子的軌跡與亮點的位置。如此一來，可降低前述出光亮度下降以及出光不均勻的問題。具體而言，透過將條狀第一電極120的電壓Vcathode 設置為低電位或是接地，並改變閘極140的驅動週期或是驅動電壓Vgate ，以分別補償各個子區域的亮度，進而提升液晶顯示器20的出光亮度以及出光均勻性。舉例而言，增加前述導線180較為密集的子區域(例如是子區域S3)之閘極140的驅動週期或是增加閘極140的驅動電壓Vgate ，使子區域S3之閘極140之驅動電壓-時間的總積分面積大於子區域S1、S2之驅動電壓-時間的總積分面積。因此，本實 施例之場發射光源100除了可達到局部點亮的效果，更可以針對各個子區域之點亮的程度進行調變，使出光更為均勻且更為節能省電。In this embodiment, the pulse width modulation (PWM) PWM is matched with the fast switching mode of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) MOSFET. Adjust the single point brightness without affecting the position of the electron's trajectory and bright spots. In this way, the problem of the decrease in the brightness of the light emission and the unevenness of the light emission can be reduced. Specifically, by setting the voltage V cathode of the strip-shaped first electrode 120 to a low potential or grounding, and changing the driving period of the gate 140 or the driving voltage V gate , respectively, the brightness of each sub-area is compensated, thereby improving The brightness of the liquid crystal display 20 and the uniformity of light emission. For example, increasing the driving period of the gate 140 of the denser sub-region (for example, the sub-region S3) of the wire 180 or increasing the driving voltage V gate of the gate 140 causes the driving voltage of the gate 140 of the sub-region S3. The total integrated area of time is greater than the total integrated area of the driving voltage-time of sub-regions S1, S2. Therefore, in addition to the effect of partial lighting, the field emission light source 100 of the present embodiment can be modulated for the degree of lighting of each sub-region, so that the light emission is more uniform and more energy-saving and power-saving.
另外，在搭配大尺寸的顯示面板下，條狀第一電極120、導線180以及閘極接墊182可以有不同的配置方式。圖6為本申請案一實施例之場發射光源的上視示意圖。請參照圖6，本實施例之場發射光源600與圖2中之場發射光源600具有相似的結構，惟兩者差異處在於本實施例之條狀第一電極120、導線180以及閘極接墊182是鏡向設置。更具體而言，連接電極122將第一基板劃分成兩個區域A1、A2，其中區域A1之條狀第一電極120、導線180以及閘極接墊182對應區域A2之條狀第一電極120、導線180以及閘極接墊182設置。In addition, the strip-shaped first electrode 120, the wire 180, and the gate pad 182 may have different configurations in combination with a large-sized display panel. FIG. 6 is a top view of a field emission light source according to an embodiment of the present application. Referring to FIG. 6, the field emission light source 600 of the present embodiment has a similar structure to the field emission light source 600 of FIG. 2, but the difference between the two is that the strip-shaped first electrode 120, the wire 180, and the gate are connected in this embodiment. Pad 182 is a mirrored setting. More specifically, the connection electrode 122 divides the first substrate into two regions A1, A2, wherein the strip-shaped first electrode 120, the wire 180, and the gate pad 182 of the region A1 correspond to the strip-shaped first electrode 120 of the region A2. The wire 180 and the gate pad 182 are disposed.
由於大尺寸的顯示面板需劃分出較多之子區域以進行局部局部點亮，因此相較於小尺寸的顯示面板，大尺寸的顯示面板需設置有更多閘極140、導線180以及閘極接墊182。在此種需求下，本實施例透過將閘極140所需之閘極接墊182分配至第一基板110相對的兩端(亦即採取此種鏡向設置的方式)，提供導線180以及閘極接墊182更充足的容置空間，進而降低因導線180過於密集造成之製程的失誤率。Since a large-sized display panel needs to divide a plurality of sub-areas for partial partial illumination, a large-sized display panel needs to be provided with more gates 140, wires 180, and gates compared to a small-sized display panel. Pad 182. Under such requirements, the present embodiment provides the wires 180 and the gates by distributing the gate pads 182 required for the gates 140 to opposite ends of the first substrate 110 (that is, by adopting such a mirror arrangement). The pole pad 182 has a more accommodating space, thereby reducing the error rate of the process caused by the wire 180 being too dense.
綜上所述，本申請案透過多對閘極將條狀區域劃分成多個子區域，透過獨立驅動各個子區域內的一對閘極，以局部誘發各個子區域內的電子，使電子撞擊螢光層對應之子區域而放光。是以，本申請案之場發射光源可達到局部 點亮的效果，且使用此場發射光源之液晶顯示器可以較為節能省電。In summary, the present application divides the strip-shaped region into a plurality of sub-regions through a plurality of pairs of gates, and independently drives a pair of gates in each sub-region to locally induce electrons in each sub-region to cause electrons to collide with the firefly. Light is emitted by the sub-region corresponding to the light layer. Therefore, the field emission source of this application can reach a local The effect of lighting, and the liquid crystal display using the field emission light source can save energy and save power.
雖然本申請案已以實施方式揭露如上，然其並非用以限定本申請案，任何所屬技術領域中具有通常知識者，在不脫離本申請案之精神和範圍內，當可作些許之更動與潤飾，故本申請案之保護範圍當視後附之申請專利範圍所界定者為準。Although the present application has been disclosed in the above embodiments, it is not intended to limit the present application, and any one of ordinary skill in the art can make a few changes without departing from the spirit and scope of the present application. Retouching, the scope of protection of this application is subject to the definition of the scope of the patent application attached.
10、20‧‧‧液晶顯示器10, 20‧‧‧ LCD monitor
100、420a、420b、600‧‧‧場發射光源100, 420a, 420b, 600‧‧ ‧ field emission source
110‧‧‧第一基板110‧‧‧First substrate
120‧‧‧條狀第一電極120‧‧‧ strip first electrode
122‧‧‧連接電極122‧‧‧Connecting electrode
130、130a、130b‧‧‧電子發射層130, 130a, 130b‧‧‧ electron emission layer
140、140a、140b、140c、140d‧‧‧閘極140, 140a, 140b, 140c, 140d‧‧‧ gate
150‧‧‧第二基板150‧‧‧second substrate
160‧‧‧第二電極160‧‧‧second electrode
162‧‧‧電極層162‧‧‧electrode layer
164‧‧‧反射層164‧‧‧reflective layer
170‧‧‧螢光層170‧‧‧Fluorescent layer
180‧‧‧導線180‧‧‧ wire
182‧‧‧閘極接墊182‧‧‧gate pads
410a‧‧‧穿透式液晶顯示面板410a‧‧‧Transmissive LCD panel
410b‧‧‧半穿透半反射式液晶顯示面板410b‧‧‧transflective liquid crystal display panel
L‧‧‧光線L‧‧‧Light
e‧‧‧電子e‧‧‧Electronics
X‧‧‧第一方向X‧‧‧ first direction
Y‧‧‧第二方向Y‧‧‧second direction
S‧‧‧條狀區域S‧‧‧ strip area
S1、S2、S3‧‧‧子區域S1, S2, S3‧‧ sub-area
S1a、S1b‧‧‧區域S1a, S1b‧‧‧ area
S100、S200‧‧‧軌跡S100, S200‧‧ track
D1‧‧‧間距D1‧‧‧ spacing
D2、D3‧‧‧最短距離D2, D3‧‧‧ shortest distance
A1、A2‧‧‧區域A1, A2‧‧‧ area
PWM‧‧‧脈衝寬度調變PWM‧‧‧ pulse width modulation
MOSFET‧‧‧金屬氧化物半導體場效電晶體MOSFET‧‧‧Metal Oxide Semiconductor Field Effect Crystal
Vgate ‧‧‧驅動電壓V gate ‧‧‧ drive voltage
Vcathode ‧‧‧電壓V cathode ‧‧‧ voltage
圖1為本申請案一實施例之場發射光源的剖面示意圖。1 is a cross-sectional view of a field emission light source according to an embodiment of the present application.
圖2為圖1實施例之場發射光源的上視示意圖。2 is a top plan view of the field emission source of the embodiment of FIG. 1.
圖3為圖2中其中一個子區域S1的放大示意圖。FIG. 3 is an enlarged schematic view of one of the sub-regions S1 of FIG. 2.
圖4A及圖4B繪示不同顯示面板下場發射光源對應的配置。4A and 4B illustrate configurations corresponding to field emission sources of different display panels.
圖5為本申請案一實施例之驅動電路的示意圖。FIG. 5 is a schematic diagram of a driving circuit according to an embodiment of the present application.
圖6為本申請案一實施例之場發射光源的上視示意圖。FIG. 6 is a top view of a field emission light source according to an embodiment of the present application.
100‧‧‧場發射光源100‧‧ ‧ field emission source
110‧‧‧第一基板110‧‧‧First substrate
120‧‧‧條狀第一電極120‧‧‧ strip first electrode
122‧‧‧連接電極122‧‧‧Connecting electrode
130‧‧‧電子發射層130‧‧‧electron emission layer
140、140a、140b、140c、140d‧‧‧閘極140, 140a, 140b, 140c, 140d‧‧‧ gate
180‧‧‧導線180‧‧‧ wire
182‧‧‧閘極接墊182‧‧‧gate pads
X‧‧‧第一方向X‧‧‧ first direction
Y‧‧‧第二方向Y‧‧‧second direction
S‧‧‧條狀區域S‧‧‧ strip area
S1、S2、S3‧‧‧子區域S1, S2, S3‧‧ sub-area
Claims (21)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101120518A TWI455174B (en) | 2012-06-07 | 2012-06-07 | Field emission light source and liquid crystal display |
| CN201210262630.7A CN102867732B (en) | 2012-06-07 | 2012-07-26 | Field emission light source and liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW101120518A TWI455174B (en) | 2012-06-07 | 2012-06-07 | Field emission light source and liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201351475A TW201351475A (en) | 2013-12-16 |
| TWI455174B true TWI455174B (en) | 2014-10-01 |
Family
ID=47446518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101120518A TWI455174B (en) | 2012-06-07 | 2012-06-07 | Field emission light source and liquid crystal display |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102867732B (en) |
| TW (1) | TWI455174B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070052338A1 (en) * | 2005-06-24 | 2007-03-08 | Tsinghua University | Field emission device and field emission display employing the same |
| WO2008076109A1 (en) * | 2006-12-18 | 2008-06-26 | Thomson Licensing | Screen structure for field emission device backlighting unit |
| TW200845082A (en) * | 2007-05-08 | 2008-11-16 | Teco Electric & Machinery Co Ltd | Planar-emission type cathode structure of field emission display |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386045A (en) * | 2011-06-21 | 2012-03-21 | 福州大学 | Field emission cathode array with grid control function and manufacturing method thereof |
-
2012
- 2012-06-07 TW TW101120518A patent/TWI455174B/en not_active IP Right Cessation
- 2012-07-26 CN CN201210262630.7A patent/CN102867732B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070052338A1 (en) * | 2005-06-24 | 2007-03-08 | Tsinghua University | Field emission device and field emission display employing the same |
| WO2008076109A1 (en) * | 2006-12-18 | 2008-06-26 | Thomson Licensing | Screen structure for field emission device backlighting unit |
| TW200845082A (en) * | 2007-05-08 | 2008-11-16 | Teco Electric & Machinery Co Ltd | Planar-emission type cathode structure of field emission display |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102867732B (en) | 2015-03-04 |
| TW201351475A (en) | 2013-12-16 |
| CN102867732A (en) | 2013-01-09 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |