TWI648812B - Mini environment device - Google Patents
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Abstract
本發明提供一種能夠對半導體晶圓片儲存容器內部確實且迅速除電的迷你潔淨裝置。本發明的迷你潔淨裝置具有密閉保管半導體晶圓片W的半導體晶圓片儲存容器10、內部維持在清淨狀態的移載室20。移載室20內更設置了產生從移載室20的上方往下方的氣流的風扇濾過單元22、產生對移載室20及半導體晶圓片儲存容器10的內部除電的離子的離子產生器24、位於開口部A3上方，與開口部A3保持間隔並且朝向開口部A3傾斜設置的整流板26。離子產生器24設置於整流板26。 The present invention provides a mini-clean device capable of reliably and quickly removing electricity from the interior of a semiconductor wafer storage container. The mini-cleaning device of the present invention has a semiconductor wafer storage container 10 in which the semiconductor wafer W is hermetically sealed, and a transfer chamber 20 in which the inside is maintained in a clean state. In the transfer chamber 20, a fan filter unit 22 that generates an air flow from above and below the transfer chamber 20, and an ion generator 24 that generates ions for removing the internals of the transfer chamber 20 and the semiconductor wafer storage container 10 are further provided. A rectifying plate 26 located above the opening A 3 and spaced apart from the opening A3 and inclined toward the opening A 3 . The ion generator 24 is disposed on the rectifying plate 26.
Description
本發明係有關於迷你潔淨裝置。且特別有關於能夠更確實且快速地將半導體晶圓片儲存容器內部除電的迷你潔淨裝置。 The present invention relates to mini clean devices. In particular, there is a mini-cleaning device that can more reliably and quickly remove the interior of the semiconductor wafer storage container.
為了應對處理空氣中的塵埃等的微小粒子對半導體晶圓片造成的污染，過去的半導體晶圓片的製造步驟會在無塵室內進行。隨著半導體裝置持續高積體化，近年來，污染對策變得更加嚴格。 In order to cope with contamination of semiconductor wafers by fine particles such as dust in the air, the manufacturing steps of conventional semiconductor wafers are performed in a clean room. As semiconductor devices continue to be highly integrated, pollution countermeasures have become more stringent in recent years.
近年來，無塵室從使工廠全體成為高清淨領域的垂直層流(down flow)式，轉變為在小空間內設置清淨度比周圍的更顯著提高的局部清淨環境的迷你潔淨(局部潔淨環境)式變為主流。這種迷你潔淨式中，使用了以SEMI標準來標準化的FOUP(Front Opening Unified Pod)或FOSB(Front Opening Sipping Box)等的半導體晶圓片搬送用或保管用的半導體晶圓片儲存容器。半導體晶圓片儲存容器一般會以聚碳酸脂等形成而容易帶電，形成儲存於內部的半導體晶圓片也容易帶電的問題。 In recent years, the clean room has changed from a vertical flow type in which the entire plant has become a high-definition net area to a mini-clean (local clean environment) in which a clean environment with a clearer degree of improvement than the surrounding area is provided in a small space. ) became the mainstream. In the mini-clean type, a semiconductor wafer storage container for semiconductor wafer transfer or storage such as FOUP (Front Opening Unified Pod) or FOSB (Front Opening Sipping Box) standardized by the SEMI standard is used. The semiconductor wafer storage container is generally formed of polycarbonate or the like and is easily charged, and the semiconductor wafer stored therein is also easily charged.
使用於這種迷你潔淨方式的裝置，如專利文獻1記載了一種迷你潔淨裝置，其在移載室的內側的開口部附近設 置了朝向開口部放出離子氣體的離子產生器。根據專利文獻1，藉由將離子產生器設置於移載室的開口部附近，能夠對半導體晶圓片儲存容器內的靜電氣體除電，也能夠對儲存於半導體晶圓片儲存容器內的帶電半導體晶圓片除電。 A device for use in such a mini-cleaning method, as disclosed in Patent Document 1, describes a mini-cleaning device which is provided near an opening portion on the inner side of the transfer chamber. An ion generator that emits ion gas toward the opening is placed. According to Patent Document 1, by disposing the ion generator in the vicinity of the opening of the transfer chamber, it is possible to remove the static gas in the semiconductor wafer storage container, and also to charge the semiconductor stored in the semiconductor wafer storage container. The wafer is de-energized.
專利文獻1：日本特開2010-165741號公報 Patent Document 1: Japanese Laid-Open Patent Publication No. 2010-165741
然而，專利文獻1記載的迷你潔淨裝置中，對儲存於半導體晶圓片儲存容器內的帶電半導體晶圓片的除電並不充分，又即使能夠對半導體晶圓片儲存容器內除電，也需要相當長的時間。半導體晶圓片的帶電會造成靜電放電使半導體晶圓片劣化，也是造成搬送半導體晶圓片的搬送機構錯誤動作或故障的原因，因此需要一種能夠更確實且迅速將半導體晶圓片儲存容器內部除電的迷你潔淨裝置。 However, in the mini-cleaning device described in Patent Document 1, the charge-removing of the charged semiconductor wafer stored in the semiconductor wafer storage container is not sufficient, and even if the semiconductor wafer storage container can be neutralized, it is required to be equivalent. Long time. The charging of the semiconductor wafer causes electrostatic discharge to deteriorate the semiconductor wafer, which is also a cause of malfunction or malfunction of the transport mechanism for transporting the semiconductor wafer. Therefore, it is necessary to more reliably and quickly place the semiconductor wafer inside the container. Mini-cleaning device for electricity removal.
因此，本發明的目的是提供一種迷你潔淨裝置，能夠更確實且迅速將半導體晶圓片儲存容器內部除電。 SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a mini-cleaning device that can more reliably and quickly neutralize the interior of a semiconductor wafer storage container.
本發明人們為了達成上述目的而努力進行各種檢討，首先著眼於設置於迷你潔淨裝置的移載室的頂部的風扇濾過單元的清淨空氣的流向。 In order to achieve the above object, the inventors of the present invention have made various efforts to first review the flow of clean air of the fan filter unit provided at the top of the transfer chamber of the mini-cleaning device.
因此，第1圖係概要顯示習知技術的迷你潔淨裝置200的主要部位的概要剖面圖。迷你潔淨裝置200具有半導體晶圓片儲存容器10、移載室20、搬送機構30。半導體晶圓片儲存容器10利用開閉蓋來密閉保管半導體晶圓片W，且設置用來搬入搬出半導體晶圓片W的開閉部A1。移載室20的內部被維持在清淨狀態。搬送裝置30將半導體晶圓片W從半導 體晶圓片儲存容器10取出，搬送到移載室20內部。移載室20的側壁的一部分是由載入埠L所構成。載入埠L具備載置半導體晶圓片儲存容器10的載置台L1以及能夠將連通至開閉部A1的開口部A3閉塞的閉塞機構L2。又，閉塞機構L2位於移載室20的上述側壁的內面。又，產生從移載室20內的上方往下方流動的氣流的風扇濾過單元22(以下簡單記載為「FFU22」)設置於移載室20的頂部，FFU22設置有離子產生器24。 Therefore, the first drawing schematically shows a schematic cross-sectional view of a main part of a mini-cleaning apparatus 200 of the prior art. The mini-cleaning device 200 has a semiconductor wafer storage container 10, a transfer chamber 20, and a transfer mechanism 30. In the semiconductor wafer storage container 10, the semiconductor wafer W is hermetically sealed by an opening and closing cover, and an opening and closing portion A 1 for loading and unloading the semiconductor wafer W is provided. The inside of the transfer chamber 20 is maintained in a clean state. The transport device 30 takes out the semiconductor wafer W from the semiconductor wafer storage container 10 and transports it to the inside of the transfer chamber 20. A portion of the side wall of the transfer chamber 20 is constructed by loading 埠L. The loading cassette L includes a mounting table L 1 on which the semiconductor wafer storage container 10 is placed, and a blocking mechanism L 2 that can close the opening A 3 that communicates with the opening and closing portion A 1 . Further, the blocking mechanism L 2 is located on the inner surface of the side wall of the transfer chamber 20. Further, a fan filter unit 22 (hereinafter simply referred to as "FFU22") that generates an air flow flowing from the upper side in the transfer chamber 20 to the lower side is provided on the top of the transfer chamber 20, and the FFU 22 is provided with the ion generator 24.
詳細內容在後述的實施例說明，但本發明人透過模擬及實驗來檢討習知技術的迷你潔淨裝置200的氣流方向。結果，如第1圖的箭頭F所示，從FFU22產生的氣流F以半導體晶圓片儲存容器10的移載室20內全體來看的話是從上方往下方流。然而，本發明人們確認了流入半導體晶圓片儲存容器10的氣流F會從底面側往上面側回流，還有，流出入半導體晶圓片儲存容器10內的風速比較小。進一步以實驗來確認除電效果時，確認了迷你潔淨裝置200中，半導體晶圓片儲存容器10內幾乎沒有除電。又也確認了如專利文獻1所示，在迷你潔淨裝置200中，即使將離子產生器24設置變更至開口部A3附近，雖可看到除電的改善效果，但並不充分。 The details are described in the examples to be described later, but the inventors reviewed the flow direction of the mini-cleaning device 200 of the prior art by simulation and experiment. As a result, as indicated by an arrow F in FIG. 1, the airflow F generated from the FFU 22 flows from the top to the bottom as viewed from the entire inside of the transfer chamber 20 of the semiconductor wafer storage container 10. However, the inventors have confirmed that the airflow F flowing into the semiconductor wafer storage container 10 is recirculated from the bottom surface side to the upper surface side, and the wind speed flowing out into the semiconductor wafer sheet storage container 10 is relatively small. Further, when the static elimination effect was confirmed by experiments, it was confirmed that there was almost no static elimination in the semiconductor wafer storage container 10 in the mini-cleaning apparatus 200. And also confirmed that, as shown in Patent Document 1, in a mini-clean apparatus 200, even if the ion generator 24 is provided to change the opening portion to the vicinity of A 3, although the effect of improving the neutralization can be seen, but not sufficient.
本發明人們考慮到，半導體晶圓片儲存容器內氣流無法充分流出入，因此離子產生器產生的離子也無法充分地流入半導體晶圓片儲存容器，結果半導體晶圓片儲存容器內的除電變得不充分。因此，想到在移載室的開口部附近的既定位置設置整流板，且安裝離子產生器於整流板。結果，發現能夠更確實且迅速地對半導體晶圓片儲存容器內部除電，而完成了 本發明。也就是，本發明的主要構成如下。 The inventors of the present invention have considered that the airflow in the semiconductor wafer storage container cannot sufficiently flow in, so that ions generated by the ion generator cannot sufficiently flow into the semiconductor wafer storage container, and as a result, the static elimination in the semiconductor wafer storage container becomes insufficient. Therefore, it is conceivable to provide a rectifying plate at a predetermined position near the opening of the transfer chamber, and to mount the ion generator on the rectifying plate. As a result, it was found that the internalization of the semiconductor wafer storage container can be more reliably and quickly eliminated. this invention. That is, the main constitution of the present invention is as follows.
本發明的迷你潔淨裝置，包括：半導體晶圓片儲存容器，藉由開閉蓋將半導體晶圓片密閉保管，且設置了用來搬入搬出該半導體晶圓片的開閉部；移載室，內部維持在清淨狀態；以及搬送機構，設置於該移載室內，將該半導體晶圓片從該半導體晶圓片儲存容器取出並搬送至該移載室內部。該移載室的側壁的一部分是由載入埠構成，該載入埠具備載置該半導體晶圓片儲存容器的載置台、以及能夠將與該開閉部連通的開口部閉塞的閉塞機構，該閉塞機構位於該移載室的該側壁的內面。該移載室內更設置：風扇濾過單元，產生從該移載室的上方往下方的氣流；離子產生器，產生對該移載室及該半導體晶圓片儲存容器的內部除電的離子；以及整流板，位於該開口部上方，與該開口部保持間隔，並朝向該開口部傾斜設置。該離子產生器安裝於該整流板。 The mini-cleaning device of the present invention includes a semiconductor wafer storage container, and the semiconductor wafer is sealed and stored by an opening and closing cover, and an opening and closing portion for loading and unloading the semiconductor wafer is provided; and the transfer chamber is internally maintained. In the clean state, and the transport mechanism is disposed in the transfer chamber, the semiconductor wafer is taken out from the semiconductor wafer storage container and transported to the transfer chamber. A part of the side wall of the transfer chamber is composed of a loading cassette that includes a mounting table on which the semiconductor wafer storage container is placed, and a closing mechanism that can close an opening that communicates with the opening and closing portion. An occlusion mechanism is located on an inner face of the side wall of the transfer chamber. The transfer chamber is further provided with: a fan filter unit, generating a gas flow from above and below the transfer chamber; an ion generator generating ions for removing the internal of the transfer chamber and the semiconductor wafer storage container; and rectifying The plate is located above the opening, spaced apart from the opening, and disposed obliquely toward the opening. The ion generator is mounted to the rectifier plate.
又，該離子產生器安裝於該整流板的該開口部側端部為佳。 Further, it is preferable that the ion generator is attached to the opening side end portion of the flow regulating plate.
又，該半導體晶圓片是矽晶圓片為佳。 Moreover, the semiconductor wafer is preferably a tantalum wafer.
根據本發明，提供了一種迷你潔淨裝置，因為設置整流板及離子產生器於移載室內的適當位置，所以能夠更確實且迅速地對半導體晶圓片儲存容器內部除電。 According to the present invention, there is provided a mini-cleaning apparatus capable of more reliably and rapidly removing the inside of a semiconductor wafer storage container because the rectifying plate and the ion generator are disposed at appropriate positions in the transfer chamber.
10‧‧‧半導體晶圓片儲存容器 10‧‧‧Semiconductor wafer storage container
11‧‧‧開閉蓋 11‧‧‧Open and close cover
20‧‧‧移載室 20‧‧‧Transfer room
22‧‧‧風扇濾過單元 22‧‧‧Fan filter unit
24‧‧‧離子產生器 24‧‧‧Ion generator
26‧‧‧整流板 26‧‧‧Rectifier board
30‧‧‧搬送機構 30‧‧‧Transportation agency
40‧‧‧充電板監視器 40‧‧‧Charging board monitor
100、200‧‧‧迷你潔淨裝置 100, 200‧‧‧ mini clean device
A1‧‧‧開閉部 A 1 ‧‧‧Opening and closing department
A3‧‧‧開口部 A 3 ‧‧‧ openings
F‧‧‧氣流 F‧‧‧Airflow
W‧‧‧半導體晶圓片 W‧‧‧Semiconductor Wafer
L‧‧‧載入埠 L‧‧‧Loading
L1‧‧‧載置台 L 1 ‧‧‧ mounting table
L2‧‧‧閉塞機構 L 2 ‧ ‧ occlusion mechanism
第1圖係概略顯示習知技術的迷你潔淨裝置的概要剖面圖。 Fig. 1 is a schematic cross-sectional view showing a mini-cleaning device of the prior art.
第2圖係概略顯示本發明一實施型態的迷你潔淨裝置的概 要剖面圖。 Figure 2 is a schematic view showing an outline of a mini-cleaning apparatus according to an embodiment of the present invention. To profile.
第3圖係顯示本發明一實施型態的迷你潔淨裝置的整流板形成的氣流方向的概要剖面圖。 Fig. 3 is a schematic cross-sectional view showing a flow direction of a rectifying plate of a mini-cleaning apparatus according to an embodiment of the present invention.
第4圖係用以說明本發明一實施型態的迷你潔淨裝置的整流板的設置位置的概要剖面圖。 Fig. 4 is a schematic cross-sectional view for explaining an installation position of a rectifying plate of a mini-cleaning apparatus according to an embodiment of the present invention.
第5圖係用以說明實施例的半導體晶圓片儲存容器內的氣流的風速的概要圖，(A)係顯示風速的測定點的立體圖；(B)顯示發明例1的風速；(C)顯示習知例1的風速。 Fig. 5 is a schematic view for explaining the wind speed of the airflow in the semiconductor wafer storage container of the embodiment, (A) is a perspective view showing a measurement point of the wind speed; (B) shows the wind speed of the invention example 1; (C) The wind speed of the conventional example 1 is shown.
第6圖係顯示實施例的整流板及離子產生器的設置位置的概要剖面圖，(A)顯示發明例2；(B)顯示習知例2；(C)顯示比較例1。 Fig. 6 is a schematic cross-sectional view showing the installation position of the rectifying plate and the ion generator of the embodiment, (A) showing Inventive Example 2; (B) showing Conventional Example 2; and (C) showing Comparative Example 1.
以下，參照圖式來說明本發明的實施型態。各圖式為了說明上的方便，會比實施比例更誇張地顯示半導體晶圓片及裝置的構成要素的縱橫比。又，因為圖式的簡化，只會概要地顯示組成的主要部位。例如，雖處理半導體晶圓片W的處理裝置連接到移載室20，但因為不是本實施型態的主要部位，所以省略圖式及說明。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. For convenience of explanation, each of the drawings shows the aspect ratio of the constituent elements of the semiconductor wafer and the device more exaggerated than the implementation ratio. Also, because of the simplification of the schema, only the main parts of the composition are displayed in outline. For example, although the processing device for processing the semiconductor wafer W is connected to the transfer chamber 20, since it is not the main portion of the present embodiment, the drawings and description are omitted.
第2圖係顯示本發明的迷你潔淨裝置100的概要剖面圖。如第2圖所示，本發明一實施型態的迷你潔淨裝置100具有半導體晶圓片儲存容器10、移載室20、搬送機構30。半導體晶圓片儲存容器10藉由開閉蓋11來密閉保管半導體晶圓片W，且設置了用來搬出搬入半導體晶圓片W的開閉部A1。移載室20維持於內部清淨的狀態。搬送機構30從半導體晶圓 片儲存容器10取出半導體晶圓片W並搬送到移載室20內部。然後移載室20的側壁的一部分是由載入埠L所構成。載入埠L具備載置半導體晶圓片儲存容器10的載置台L1以及能夠將連通至開閉部A1的開口部A3閉塞的閉塞機構L2。又，閉塞機構L2位於移載室20的上述側壁的內面。 Fig. 2 is a schematic cross-sectional view showing the mini-cleaning apparatus 100 of the present invention. As shown in FIG. 2, a mini-cleaning apparatus 100 according to an embodiment of the present invention includes a semiconductor wafer storage container 10, a transfer chamber 20, and a transfer mechanism 30. In the semiconductor wafer storage container 10, the semiconductor wafer W is hermetically sealed by the opening and closing cover 11, and the opening and closing portion A 1 for carrying in and carrying in the semiconductor wafer W is provided. The transfer chamber 20 is maintained in an internally clean state. The transport mechanism 30 takes out the semiconductor wafer W from the semiconductor wafer storage container 10 and transports it to the inside of the transfer chamber 20. A portion of the side wall of the transfer chamber 20 is then constructed of load 埠L. The loading cassette L includes a mounting table L 1 on which the semiconductor wafer storage container 10 is placed, and a blocking mechanism L 2 that can close the opening A 3 that communicates with the opening and closing portion A 1 . Further, the blocking mechanism L 2 is located on the inner surface of the side wall of the transfer chamber 20.
在此，移載室20內更設置有風扇濾過單元22(以下簡稱為「FFU22」)、離子產生器24、整流板26。FFU22產生從移載室20內的上方朝向下方的氣流。離子產生器24產生對移載室20及半導體晶圓片儲存容器10內部除電的離子。整流板26位於開口部A3的上方，朝向開口部A3間隔設置，且朝向開口部A3傾斜設置。離子產生器24安裝於整流板26是本實施型態的迷你潔淨裝置10的特別技術特徵。藉由這個構造，如第2圖的氣流F所示，離子產生器24產生的離子充分流入半導體晶圓片儲存容器10內，因此本實施型態的迷你潔淨裝置100能夠對半導體晶圓片儲存容器10內部更確實且迅速地除電。以下詳細說明各構造。 Here, the transfer chamber 20 is further provided with a fan filter unit 22 (hereinafter simply referred to as "FFU22"), an ion generator 24, and a rectifying plate 26. The FFU 22 generates an air flow from above in the transfer chamber 20 toward the lower side. The ion generator 24 generates ions that neutralize the interior of the transfer chamber 20 and the semiconductor wafer storage container 10. Rectifying plate 26 positioned above the opening portion of A 3, A 3 toward the opening portion spaced from the opening portion and inclined toward A 3. The attachment of the ion generator 24 to the rectifying plate 26 is a special technical feature of the mini-cleaning device 10 of the present embodiment. With this configuration, as shown by the airflow F of FIG. 2, the ions generated by the ion generator 24 sufficiently flow into the semiconductor wafer storage container 10, so that the mini-cleaning device 100 of the present embodiment can store the semiconductor wafer. The interior of the container 10 is more reliably and quickly removed. Each structure will be described in detail below.
半導體晶圓片儲存容器10能夠使用被SEMI標準E47.1等所規定的一般的FOUP。半導體晶圓片儲存容器10設置有用來搬入搬出半導體晶圓片W的開閉部A1。密閉半導體晶圓片儲存容器10時，開閉蓋11將開閉部A1關閉。又，藉由機械臂等取下開閉蓋11使開閉部A1打開。FOUP能夠將複數片(例如25片)的半導體晶圓片W儲存於FOUP內，且能夠密閉保管半導體晶圓片W。又，與FOUP的半導體晶圓片W接觸的部分一般以聚碳酸脂等形成。 The semiconductor wafer storage container 10 can use a general FOUP specified by SEMI standard E47.1 or the like. The semiconductor wafer storage container 10 is provided with an opening and closing portion A 1 for loading and unloading the semiconductor wafer W. When the sealed semiconductor wafer storage container 10, opening and closing cover 11 to close the opening and closing portion A 1. Further, the robot arm and the like is removed by opening and closing the opening and closing cover 11 is opened portion A 1. The FOUP can store a plurality of (for example, 25) semiconductor wafers W in the FOUP, and can store the semiconductor wafer W in a sealed state. Further, the portion in contact with the semiconductor wafer W of the FOUP is generally formed of polycarbonate or the like.
載入埠L是將半導體晶圓片儲存容器10(FOUP)內的半導體晶圓片W送入移載室20的介面部，能夠使用一般的載入埠。又，與FOUP同樣地，載入埠也被SEMI標準E154等所規定。載入埠L具備載置半導體晶圓片儲存容器10的載置台L1，也具備能夠將連通於半導體晶圓片儲存容器的開閉部A1的開口部A3閉塞的閉塞機構L2。又，移載室20的側壁的一部分以載入埠L構成，閉塞機構L2位於移載室20的側壁的內面。儲存半導體晶圓片W的半導體晶圓片儲存容器10會被天花板單軌或地面行走機器人等搬運到載入埠L附近，接著再被機械臂等放到載入埠L的載置台L1上。為了說明的方便，雖未圖示但移載室20設置複數的載入埠也很一般，迷你潔淨裝置100也可以設置複數的載入埠L。 The load 埠L is a dielectric surface in which the semiconductor wafer W in the semiconductor wafer storage container 10 (FOUP) is sent to the transfer chamber 20, and a general loading cassette can be used. In addition, similar to FOUP, loading 埠 is also regulated by SEMI standard E154 and the like. The loading cassette L includes a mounting table L 1 on which the semiconductor wafer storage container 10 is placed, and a blocking mechanism L 2 that can close the opening A 3 of the opening and closing portion A 1 of the semiconductor wafer storage container. Further, a part of the side wall of the transfer chamber 20 is constituted by a load 埠L, and the closing mechanism L 2 is located at the inner surface of the side wall of the transfer chamber 20. The semiconductor wafer storage container 10 storing the semiconductor wafer W is transported to the vicinity of the loading cassette L by a ceiling monorail or a ground traveling robot, and then placed on the mounting table L 1 loaded with the cassette L by a robot arm or the like. For convenience of explanation, although not shown, the transfer chamber 20 is provided with a plurality of loading cassettes, and the mini cleaning apparatus 100 may be provided with a plurality of loading cassettes L.
移載室20的內部被FFU22等維持在清淨狀態。移載室20的側壁的一部分是以載入埠L構成這點如先前所述。又，移載室20內部設置了搬送機構30，開閉設置於半導體晶圓片儲存容器10的開閉部A1的開閉蓋11，從容器內取出半導體晶圓片W並搬送至移載室20內部。 The inside of the transfer chamber 20 is maintained in a clean state by the FFU 22 or the like. A portion of the side wall of the transfer chamber 20 is constructed by loading 埠L as previously described. And, inside the transfer chamber 20 is provided inside the conveyance mechanism 30, a shutter is provided to store opening and closing the opening and closing of the container 10. A 1 cover 11 to semiconductor wafers, taken out of the semiconductor wafer W from the container and conveyed to the transfer chamber 20 .
閉塞機構L2例如是上下升降的滑動式埠門，藉由閉塞機構L2能夠閉塞移載室20來維持清淨狀態。閉塞機構L2打開開口部A3，且開閉部A1也開放的情況下，半導體晶圓片儲存容器10及移載室20連通。 The closing mechanism L 2 is, for example, a sliding door that moves up and down, and the blocking mechanism L 2 can close the transfer chamber 20 to maintain the clean state. When the closing mechanism L 2 opens the opening A 3 and the opening and closing portion A 1 is also opened, the semiconductor wafer storage container 10 and the transfer chamber 20 communicate with each other.
又，搬送機構30能夠以具備機械手(或機械臂)的一般的搬送機器人等構成。用機械手(或機械臂)吸附或把持儲存於半導體晶圓片儲存容器10的半導體晶圓片W，並將 半導體晶圓片W放入半導體晶圓片儲存容器10內。 Further, the transport mechanism 30 can be configured by a general transport robot or the like including a robot (or a robot arm). The semiconductor wafer W stored in the semiconductor wafer storage container 10 is adsorbed or held by a robot (or a robot arm), and The semiconductor wafer W is placed in the semiconductor wafer storage container 10.
又，FFU22是由送風扇及高性能的塵埃濾過器等構成。又，離子產生器24能夠做成施加高壓於放電用電極，在放電用電極與接地電極之間產生電弧放電來電離空氣，產生正離子及負離子的裝置、或光電離裝置等。另外，雖未圖示，但離子產生器24會在不影響氣流F的方向的範圍內設置連接到電壓電源的電源線等。又，上述移載室20的框體、閉塞機構L2、搬送機構30、FFU22及離子產生器24能夠使用通常的迷你潔淨裝置中使用的一般的款式。 Further, the FFU 22 is composed of a blower fan, a high-performance dust filter, and the like. Further, the ion generator 24 can be a device that applies a high voltage to the discharge electrode, generates an arc discharge between the discharge electrode and the ground electrode, and generates a positive ion and a negative ion, or a photoionization device. Further, although not shown, the ion generator 24 is provided with a power supply line or the like connected to the voltage source in a range that does not affect the direction of the airflow F. Further, the frame body, the closing mechanism L 2 , the conveying mechanism 30, the FFU 22, and the ion generator 24 of the transfer chamber 20 can be used in a general style used in a general mini-cleaning device.
在此，本實施型態的迷你潔淨裝置100中，為了使氣流F從移載室20的上方流入開口部A3，會設置整流板26於移載室20的開口部A3的上方，與開口部A3保持間隔並且朝向開口部A3傾斜設置，而且離子產生器24安裝於整流板26，這些特徵特別重要。如第3圖概要顯示，藉由將整流板26設置於移載室內，與不設置整流板26的情況(參照已說明的第1圖)相反，氣流F會從半導體晶圓片儲存容器10的上面側往底面側流入。又，往半導體晶圓片儲存容器10內的流出入的風速變大這點也能夠從本發明人們的模擬及實驗中得知。以上，本實施型態的迷你潔淨裝置100中，讓離子產生器24產生的離子載於氣流F上，能夠更確實且迅速地對半導體晶圓片儲存容器10內部除電。 Here, the patterns 100 of the present embodiment mini-clean apparatus, for opening the airflow F flows into the upper portion from the transfer chamber 20 A 3, the rectifying plate 26 is set above the transfer chamber 20. A portion of the opening 3, and The opening portion A 3 is spaced apart and disposed obliquely toward the opening portion A 3 , and the ion generator 24 is attached to the rectifying plate 26 , and these features are particularly important. As shown in the outline of Fig. 3, by providing the rectifying plate 26 in the transfer chamber, the airflow F is from the semiconductor wafer storage container 10 as opposed to the case where the rectifying plate 26 is not provided (see the first drawing described above). The upper side flows into the bottom side. Further, the wind speed of the outflow into the semiconductor wafer storage container 10 can be increased from the simulations and experiments of the present inventors. As described above, in the mini-cleaning apparatus 100 of the present embodiment, the ions generated by the ion generator 24 are carried on the airflow F, and the inside of the semiconductor wafer storage container 10 can be more reliably and quickly removed.
在此，如第4圖的概要剖面圖所示，關於設置整流板26的位置，假設整流板26與開口部A3的上端部的水平方向距離為1，高度為h，相對於水平面的傾斜角度為θ，如 果氣流F的方向能夠如第3圖所示從半導體晶圓片儲存容器10的上面往底面流的話，並沒有任何限定，但1、h、θ的範圍也能夠設定如下。也就是，當整流板的形狀是圖示的平板狀的情況下，能夠將水平方向的距離l設定為50mm以上，150mm以下為佳。在這個情況下，能夠將高度h設定為50mm以上，200mm以下為佳。又，在這個情況下，傾斜角θ能夠設定為20°以上，60°以下為佳。當整流板的形狀是圖示的平板狀的情況下，整流板的寬度L能夠設定為30mm以上，100mm以下為佳。整流板26的長度方向的長度(未圖示)比半導體晶圓片儲存容器10的同方向的長度更長即可，但如果能夠形成如第3圖所示的氣流F的方向，即使比較短也沒關係。 Here, as shown in a schematic cross-sectional view of FIG. 4, the location of the rectifying plate 26, assuming the rectifying plate 26 in the horizontal direction A and the upper opening portion 3 a distance of 1, the height is h, inclined with respect to the horizontal plane The angle is θ. If the direction of the airflow F can flow from the upper surface of the semiconductor wafer storage container 10 to the bottom surface as shown in Fig. 3, the range of 1, h, and θ can be set as follows. That is, when the shape of the flow regulating plate is a flat plate shape as illustrated, the distance l in the horizontal direction can be set to 50 mm or more, and preferably 150 mm or less. In this case, the height h can be set to 50 mm or more, and 200 mm or less is preferable. Moreover, in this case, the inclination angle θ can be set to 20 or more, and 60 or less is preferable. When the shape of the flow regulating plate is a flat plate shape as illustrated, the width L of the flow regulating plate can be set to 30 mm or more, preferably 100 mm or less. The length of the rectifying plate 26 in the longitudinal direction (not shown) may be longer than the length of the semiconductor wafer storage container 10 in the same direction, but if the direction of the airflow F as shown in Fig. 3 can be formed, even if it is relatively short does not matter.
又，整流板26的形狀也不限定於圖示的平板形狀，只要能夠形成如第3圖所示的氣流F的方向，也可以做成半圓弧狀或彎曲狀。另外，整流板26對於移載室20的安裝方法能夠是依照常規方法來設置，雖未圖示，但例如能夠設置V字型的構件等等至移載室20的壁部的一部分，也能夠利用移載室20的樑來設置。另外，為了避免移載室20內的整流板產生粉塵，不使用升降器具等，以接著劑等固定設置於移載室20內為佳。在這個情況下，整流板26的設置以不干涉搬送裝置30進行的半導體晶圓片W的取出為重要條件。 Further, the shape of the flow regulating plate 26 is not limited to the flat plate shape shown in the drawing, and may be a semi-arc shape or a curved shape as long as the direction of the air flow F as shown in Fig. 3 can be formed. Further, the method of attaching the flow regulating plate 26 to the transfer chamber 20 can be provided in accordance with a conventional method. Although not shown, for example, a V-shaped member or the like can be provided to a part of the wall portion of the transfer chamber 20, and It is set by the beam of the transfer chamber 20. Further, in order to prevent dust from being generated in the flow regulating plate in the transfer chamber 20, it is preferable to use a lifting device or the like in a fixed manner in the transfer chamber 20 without using a lifting agent or the like. In this case, the arrangement of the rectifying plate 26 is an important condition for the removal of the semiconductor wafer W without interfering with the transfer device 30.
將離子產生器24安裝於整流板26的位置，只要能讓產生的離子流入半導體晶圓片儲存容器10的話可以任意設定，但將離子產生器24安裝在整流板26的開口部A3側端部特佳。又，也可以將離子產生器24安裝在整流板26的上面側。 The ion generator 24 is attached to the rectifying plate 26, and can be arbitrarily set as long as the generated ions can flow into the semiconductor wafer storage container 10. However, the ion generator 24 is attached to the opening A 3 side of the rectifying plate 26. The department is particularly good. Further, the ion generator 24 may be attached to the upper surface side of the rectifying plate 26.
另外，作為本實施型態的迷你潔淨裝置100的搬送對象的半導體晶圓片W可以是任意材料。半導體晶圓片W例如是由矽、化合物半導體(GaAs、GaN、SiC)組成，且其表面不具有磊晶層的塊狀單晶晶圓片。又，塊狀單晶晶圓片表面具有磊晶層的磊晶晶圓片也能夠作為半導體晶圓片W的例子。在裝置元件形成途中、或裝置元件形成後的半導體晶圓片都能夠作為迷你潔淨裝置100的搬送對象。從這些晶圓片之中，以使用矽晶圓片(包含表面形成的磊晶層的磊晶矽晶圓片)來作為半導體晶圓片W為佳。因為矽晶圓片容易帶靜電。 In addition, the semiconductor wafer W to be transported as the mini-cleaning device 100 of the present embodiment may be any material. The semiconductor wafer W is, for example, a bulk single crystal wafer composed of germanium, a compound semiconductor (GaAs, GaN, SiC) and having no epitaxial layer on its surface. Further, an epitaxial wafer having an epitaxial layer on the surface of the bulk single crystal wafer can also be exemplified as the semiconductor wafer W. The semiconductor wafer in the middle of forming the device element or after the device element is formed can be transported as the object of the mini-clean device 100. Among these wafers, it is preferable to use a silicon wafer (an epitaxial wafer including an epitaxial layer formed on the surface) as the semiconductor wafer W. Because the silicon wafer is easy to carry static electricity.
以下，使用實施例更詳細說明本發明，但本發明並不限定於以下的實施例。 Hereinafter, the present invention will be described in more detail by way of examples, but the present invention is not limited to the following examples.
<實驗例1> <Experimental Example 1>
(發明例1) (Inventive Example 1)
準備第2圖所示的迷你潔淨裝置100。關於整流板26的設置位置，將第4圖所述的水平方向的距離1設定為65mm，高度h設定為60mm，傾斜角θ設定為30°。又，整流板26的形狀設定為如圖示的平板狀，整流板的寬度L設定為65mm。又，整流板26的長度方向的長度設定為比半導體晶圓片儲存容器的容器寬度更大的400mm。又，將離子產生器24安裝於整流板26的開口部A3側端部。將位於半導體晶圓片儲存容器10中央的，從開口部A3的兩端部朝向半導體晶圓片儲存容器10的內部鉛直方向移動50mm，水平方向移動5mm的位置(參照第5(A)圖)設定為測定點，設置風向風速計來測量測定點的風速。又，使用通用熱流體解析程式來模擬裝置 內的氣流的流動方向。與第2圖不相同之處在於，因為設置了3維的風速計而拆下半導體晶圓片W。 Prepare the mini-cleaning device 100 shown in Fig. 2. Regarding the installation position of the flow regulating plate 26, the distance 1 in the horizontal direction described in Fig. 4 is set to 65 mm, the height h is set to 60 mm, and the inclination angle θ is set to 30°. Further, the shape of the flow regulating plate 26 was set to a flat plate shape as shown, and the width L of the flow regulating plate was set to 65 mm. Further, the length of the flow regulating plate 26 in the longitudinal direction is set to be 400 mm larger than the container width of the semiconductor wafer storage container. Further, the ion generator 24 is attached to the end portion of the flow regulating plate 26 on the side of the opening A 3 side. The center of the semiconductor wafer storage container 10 is moved from the both end portions of the opening A 3 toward the inside of the semiconductor wafer storage container 10 by 50 mm in the vertical direction and at a position shifted by 5 mm in the horizontal direction (see FIG. 5(A) ) Set as the measurement point and set the wind direction anemometer to measure the wind speed at the measurement point. Also, a general thermal fluid analysis program is used to simulate the flow direction of the gas flow within the device. The difference from Fig. 2 is that the semiconductor wafer W is removed because a three-dimensional anemometer is provided.
如第5(B)圖所示，在發明例1中上方的測定點，觀測到從移載室20側往半導體晶圓片儲存容器10內流動的風向，風速0.25m/s的氣流。又，在下方的測定點，觀測到從半導體晶圓片儲存容器10的底面側往移載室20下方內流動的風向，風速0.15m/s的氣流。又，模擬的結果確認氣流如第2圖的箭頭F所示的方向流動。另外，FFU22的風速設定為0.60m/s。 As shown in Fig. 5(B), in the upper measurement point of the invention example 1, the airflow flowing from the transfer chamber 20 side into the semiconductor wafer storage container 10 at a wind speed of 0.25 m/s was observed. Further, at the lower measurement point, a wind flow from the bottom surface side of the semiconductor wafer storage container 10 to the lower side of the transfer chamber 20 was observed, and the air flow rate was 0.15 m/s. Further, as a result of the simulation, it was confirmed that the gas flow flowed in the direction indicated by the arrow F in Fig. 2 . In addition, the wind speed of the FFU 22 is set to 0.60 m/s.
(習知例1) (Conventional Example 1)
除了從發明例1的迷你潔淨裝置100拆下整流板26及離子產生器24以外，準備與發明例1相同的迷你潔淨裝置。將測定點設定在與發明例1相同的位置。與發明例1一樣量測測定點的風速，且模擬裝置內的氣流的方向。 A mini-cleaning apparatus similar to that of Inventive Example 1 was prepared except that the rectifying plate 26 and the ion generator 24 were removed from the mini-cleaning apparatus 100 of the first embodiment. The measurement point was set at the same position as in Invention Example 1. The wind speed at the measurement point was measured in the same manner as in Inventive Example 1, and the direction of the air flow in the device was simulated.
如第5(C)圖所示，在習知例1中的上方的測定點，觀測到從半導體晶圓片儲存容器10的上面側朝向移載室20上方的風向，風速0.10m/s的氣流。又，在下方的測定點，觀測到移載室20側朝向從半導體晶圓片儲存容器10的底面側的風向，風速0.15m/s的氣流。又，模擬的結果確認氣流如第1圖的箭頭F所示的方向流動。 As shown in Fig. 5(C), in the upper measurement point in the conventional example 1, the wind direction from the upper surface side of the semiconductor wafer storage container 10 toward the upper side of the transfer chamber 20 was observed, and the wind speed was 0.10 m/s. airflow. Further, at the lower measurement point, it was observed that the transfer chamber 20 side was directed toward the airflow from the bottom surface side of the semiconductor wafer storage container 10, and the air velocity was 0.15 m/s. Further, as a result of the simulation, it was confirmed that the gas flow flowed in the direction indicated by the arrow F in Fig. 1 .
從以上可知，習知例1中，流入半導體晶圓片儲存容器10內的氣流F是從底面側往上面側，且流出入半導體晶圓片儲存容器10的風速比較小。另一方面，發明例1中，流入半導體晶圓片儲存容器10內的氣流F與習知例1相反，是從上面側往底面側，且流出入半導體晶圓片儲存容器10的風速比較大。 As described above, in the conventional example 1, the airflow F flowing into the semiconductor wafer storage container 10 is from the bottom surface side to the upper surface side, and the wind speed flowing out into the semiconductor wafer sheet storage container 10 is relatively small. On the other hand, in the first embodiment, the airflow F flowing into the semiconductor wafer storage container 10 is opposite to the conventional example 1 in that the wind speed from the upper surface side to the bottom surface side and flowing into the semiconductor wafer storage container 10 is relatively large. .
<實驗例2> <Experimental Example 2>
(發明例2) (Inventive Example 2)
準備與發明例1相同的迷你潔淨裝置，如第6(A)圖所示，設置充電板監視器40於半導體晶圓片儲存容器10的底面。另外，與發明例1相同，拆下半導體晶圓片儲存容器10內的半導體晶圓片W。測量充電板監視器從+1000V衰減到+100V的時間後可知在15秒以內會衰減到+100V。 A mini-cleaning apparatus similar to that of Inventive Example 1 was prepared, and as shown in Fig. 6(A), a charging-plate monitor 40 was provided on the bottom surface of the semiconductor wafer storage container 10. Further, in the same manner as in the first embodiment, the semiconductor wafer W in the semiconductor wafer storage container 10 is removed. After measuring the time when the charging pad monitor is attenuated from +1000V to +100V, it will be attenuated to +100V within 15 seconds.
(習知例2) (Conventional Example 2)
準備發明例2的迷你潔淨裝置，再如第6(B)圖所示，取下整流板，安裝離子產生器24於FFU22的中央部(也就是，準備第1圖所示的迷你潔淨裝置200)。測量充電板監視器從+1000V衰減到+100V的時間後可知經過60秒後會衰減到約+900V。 The mini-cleaning device of the second embodiment is prepared, and as shown in Fig. 6(B), the rectifying plate is removed, and the ion generator 24 is attached to the central portion of the FFU 22 (that is, the mini-cleaning device 200 shown in Fig. 1 is prepared. ). Measuring the time that the charging pad monitor decays from +1000V to +100V shows that it decays to about +900V after 60 seconds.
(比較例1) (Comparative Example 1)
準備發明例2的迷你潔淨裝置，再如第6(C)圖所示，取下整流板，安裝離子產生器24於開口部A3正上方。測量充電板監視器從+1000V衰減到+100V的時間後可知經過60秒後會衰減到約+400V。 Preparation Example 2 mini-clean apparatus of the present invention, another example shown in FIG. 6 (C) of FIG, remove the rectifying plate, the ion generator 24 is mounted in an opening directly above the portion A 3. Measuring the time that the charging pad monitor decays from +1000V to +100V shows that it decays to about +400V after 60 seconds.
從以上的結果確認了，將整流板26設置於移載室20內的既定位置的實施例2中，能夠確實且迅速地對半導體晶圓片儲存容器10內除電。從實施例1、2可知，發明例1、2比起習知例1、2，除了將氣流F的方向反轉，風量也較大，因此除電會確實且迅速地實行。 From the above results, it was confirmed that in the second embodiment in which the rectifying plate 26 is placed at a predetermined position in the transfer chamber 20, the inside of the semiconductor wafer storage container 10 can be reliably and quickly removed. As is apparent from the first and second embodiments, the first and second embodiments of the inventions are different from the conventional examples 1 and 2, except that the direction of the airflow F is reversed, and the air volume is also large. Therefore, the static elimination is performed reliably and quickly.
根據本發明，能夠提供一種迷你潔淨裝置，能夠 更確實且快速地對半導體晶圓片儲存容器內部除電。 According to the present invention, it is possible to provide a mini clean device capable of The interior of the semiconductor wafer storage container is more reliably and quickly removed.
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| JP2015128521A JP6451527B2 (en) | 2015-06-26 | 2015-06-26 | Mini-environment device |
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| TWI817512B (en) * | 2022-05-19 | 2023-10-01 | 京鼎精密科技股份有限公司 | Device for measuring wind speed |
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| JP2005205781A (en) * | 2004-01-23 | 2005-08-04 | Three M Innovative Properties Co | Foaming resistant laminated sheet and foaming resistant laminate |
| JP2007220773A (en) * | 2006-02-15 | 2007-08-30 | Hitachi High-Tech Control Systems Corp | Mini environment device, and clean room equipment using same |
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| JP2006330167A (en) * | 2005-05-24 | 2006-12-07 | Fujifilm Holdings Corp | Exposure apparatus |
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| JP2005205781A (en) * | 2004-01-23 | 2005-08-04 | Three M Innovative Properties Co | Foaming resistant laminated sheet and foaming resistant laminate |
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