TWI451585B - Enhanced vision system for screen printing pattern alignment - Google Patents

Enhanced vision system for screen printing pattern alignment Download PDF

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TWI451585B
TWI451585B TW099120279A TW99120279A TWI451585B TW I451585 B TWI451585 B TW I451585B TW 099120279 A TW099120279 A TW 099120279A TW 99120279 A TW99120279 A TW 99120279A TW I451585 B TWI451585 B TW I451585B
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substrate
solar cell
doped region
forming process
screen printing
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TW099120279A
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TW201121086A (en
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Marco Galiazzo
Timothy W Weidman
Andrea Baccini
Sunhome Steve Paak
Hongbin Fang
Zhenhua Zhang
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41M—PRINTING, DUPLICATING, MARKING, OR COPYING PROCESSES; COLOUR PRINTING
    • B41M1/00—Inking and printing with a printer's forme
    • B41M1/12—Stencil printing; Silk-screen printing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41N—PRINTING PLATES OR FOILS; MATERIALS FOR SURFACES USED IN PRINTING MACHINES FOR PRINTING, INKING, DAMPING, OR THE LIKE; PREPARING SUCH SURFACES FOR USE AND CONSERVING THEM
    • B41N1/00—Printing plates or foils; Materials therefor
    • B41N1/24—Stencils; Stencil materials; Carriers therefor
    • B41N1/248—Mechanical details, e.g. fixation holes, reinforcement or guiding means; Perforation lines; Ink holding means; Visually or otherwise detectable marking means; Stencil units
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Description

用於網板印刷圖案對準之強化視覺系統Enhanced vision system for stencil printing pattern alignment

本發明之具體實施例通常關於用來在基板之表面的期望區域上形成圖案化層之系統及製程。Particular embodiments of the present invention generally relate to systems and processes for forming patterned layers on desired areas of the surface of a substrate.

太陽能電池為將太陽光直接轉換成電能的光伏(photovoltaic,PV)元件。PV市場在過去十年經歷了年成長率超過30%的成長。某些文章認為，在不久的將來，全球太陽能電池能量產品的產量可能超過10 GWp。據估計，全部太陽能模組有超過95%以矽晶圓為基底。高市場成長率結合對實質上降低太陽電力成本的需求，造成了對廉價形成高品質太陽能電池的諸多嚴峻挑戰。因此，製作商業上可行的太陽能電池的一個主要件在於，藉由增進元件產量並增加基板生產量，來降低形成太陽能電池所需的製造成本。A solar cell is a photovoltaic (PV) component that converts sunlight directly into electrical energy. The PV market has experienced an annual growth rate of more than 30% in the past decade. Some articles argue that in the near future, global solar cell energy product production may exceed 10 GWp. It is estimated that more than 95% of all solar modules are based on germanium wafers. The combination of high market growth rates and the need to substantially reduce solar power costs has created many serious challenges for the inexpensive formation of high quality solar cells. Therefore, one of the main components for making commercially viable solar cells is to reduce the manufacturing cost required to form solar cells by increasing component yield and increasing substrate throughput.

太陽能電池典型地具有一或一個以上p-n接合點(p-n junction)。各p-n接合點包括半導體材料中的兩個不同區域，其中一邊表示為p-型區域，而另一邊則表示為n-型區域。當將太陽能電池的p-n接合點暴露於陽光(由光子能量構成)下時，陽光會透過PV效應被直接轉換為電。太陽能電池產生特定量的電能，並平鋪成模組尺寸以傳遞期望量的系統電能。太陽能模組與特定框架及連接器連結成面板。太陽能電池通常形成於矽基板上，該矽基板可為單一或多晶矽基板。典型的太陽能電池包含典型地小於約0.3 mm厚度的矽晶圓、基板或薄片，且具n-型矽薄層位在形成於基板上的p-型區域之頂部。Solar cells typically have one or more p-n junctions. Each p-n junction includes two distinct regions in the semiconductor material, one of which is represented as a p-type region and the other is represented as an n-type region. When the p-n junction of a solar cell is exposed to sunlight (consisting of photon energy), sunlight is directly converted into electricity by the PV effect. The solar cells produce a specific amount of electrical energy and are tiled to a module size to deliver a desired amount of system power. The solar module is connected to a specific frame and connector to form a panel. Solar cells are typically formed on a germanium substrate, which may be a single or polycrystalline germanium substrate. A typical solar cell comprises a tantalum wafer, substrate or sheet typically having a thickness of less than about 0.3 mm with an n-type tantalum layer on top of a p-type region formed on the substrate.

第1A及1B圖概略地繪示於晶圓11上製成的標準矽太陽能電池10。晶圓11包含p-型基底區域21、n-型發射區域22以及設置於其間的p-n接合點區域23。為了增加負電荷載體(即，電子)的數量，n-型區域或n-型半導體，藉由以某類元素(例如， 磷(P)、砷(As)或銻(Sb))摻雜半導體而形成。類似地，p-型區域或p-型半導體，藉由將三價原子加入結晶格中而形成，造成對矽晶格而言正常的四個共價鍵之一失去一個電子。因而，摻質原子可接受來自毗鄰原子共價鍵之電子，以完成第四鍵結。摻質原子接受電子，導致該毗鄰原子失去半個鍵結，並造成「電洞」的形成。FIGS. 1A and 1B schematically show a standard tantalum solar cell 10 fabricated on a wafer 11. The wafer 11 includes a p-type base region 21, an n-type emission region 22, and a pn junction region 23 disposed therebetween. In order to increase the number of negative charge carriers (ie, electrons), an n-type region or an n-type semiconductor, by doping a semiconductor with a certain type of element ( for example, phosphorus (P), arsenic (As) or antimony (Sb)) And formed. Similarly, a p-type region or a p-type semiconductor is formed by adding a trivalent atom to the crystal lattice, causing one of the four covalent bonds that are normal to the germanium lattice to lose one electron. Thus, the dopant atoms can accept electrons from covalent bonds adjacent to the atoms to complete the fourth bond. The dopant atoms accept electrons, causing the adjacent atoms to lose half of the bond and causing the formation of "holes."

當光線落於太陽能電池上時，來自入射光子的能量於p-n接合點區域23的兩側產生電子-電洞對。電子跨過p-n接合點擴散至較低能級，且電洞於相反方向上擴散，於發射體上創造負電荷，並於基底中累積相對應的正電荷。當一電路形成於發射體與基底之間，且p-n接合點暴露於光的某些波長下時，電流將會流動。藉由半導體受光照所產生的電流流經設置於前側18，即受光側(light-receiving side)上的接觸，以及太陽能電池10的後側19。頂部接觸結構，如第1A圖所示，通常被設置成寬距離薄金屬線，或指狀物14，其供應電流至較大的匯電條(bus bar) 15。既然後接觸25不防止入射光線撞擊太陽能電池10，其通常並不受限於被形成多重薄金屬線。太陽能電池10通常以介電材料(如Si3 N4 )之薄膜覆蓋，介電材料之薄膜作為抗反射塗層16，或ARC，以最小化自太陽能電池10的頂部表面22A之光反射。When light falls on the solar cell, energy from the incident photons creates an electron-hole pair on both sides of the pn junction region 23. The electrons diffuse across the pn junction to a lower energy level, and the holes diffuse in opposite directions, creating a negative charge on the emitter and accumulating a corresponding positive charge in the substrate. When a circuit is formed between the emitter and the substrate and the pn junction is exposed to certain wavelengths of light, current will flow. The current generated by the illumination of the semiconductor flows through the contact disposed on the front side 18, the light-receiving side, and the back side 19 of the solar cell 10. The top contact structure, as shown in Figure 1A, is typically provided as a wide distance thin metal wire, or finger 14, which supplies current to a larger bus bar 15. Both the contact 25 then does not prevent incident light from striking the solar cell 10, which is generally not limited to being formed into multiple thin metal wires. The solar cell 10 is typically a dielectric material (e.g., Si 3 N 4) film covering the thin film dielectric material as the antireflection coating 16, or the ARC, in order to minimize light reflected from the top surface 22A of the solar cell 10.

網板印刷長久以來被使用於標的物，如衣服或陶瓷上印刷設計，並被使用於電子工業中以印刷電子組件設計，如於基板表面上之電子接觸或內連線。最先進的太陽能電池製造程序也使用網板印刷製程。於某些應用中，於太陽能電池基板上以網板印刷接觸線，如指狀物14是理想的。指狀物14與基板接觸並適用於與一或一個以上經摻雜區域(例如， n-型發射體區域22)形成歐姆連接。歐姆接觸是半導體元件上的一個區域，其被製備，使得元件的電流-電壓(I-V)曲線為線性且對稱的，即半導體元件的經摻雜矽區域與金屬接觸之間沒有高阻抗介面存在。對於太陽能電池的表現以及於太陽能電池製造程序中形成的電路之穩定性而言，低阻抗且穩定的接觸是極為重要的。為了加強與太陽能電池元件的接觸，典型地作法是將指狀物14安置於形成在基板表面內之重度摻雜區域17上，以使歐姆接觸可形成。由於所形成的重度摻雜區域17，歸因於它們的電氣特性，傾向阻礙或最小化可通過其之光線，因此在使其區域夠大以確保指狀物14能被可靠地對準並形成於其上的同時最小化重度摻雜區域的尺寸是理想的。歸因於自動轉移裝置上的基板安置錯誤、基板邊緣瑕疵、基板表面上之重度摻雜區域17的未知登記及對準，及/或自動轉移裝置上的基板偏移等的沉積指狀物14與位於下方重度摻雜區域17的錯位，可造成不佳的元件表現以及低元件效能。重度摻雜區域17可使用多種圖案化技術形成於基板表面上，以創造較重或較輕摻雜的區塊，舉例而言，藉由使用圖案化擴散屏障進行磷擴散步驟。後側接觸完成了太陽能電池所需的電子電路，以藉由與基板的p-型基底區域形成歐姆接觸來產生電流。Screen printing has long been used in the subject matter of printed matter, such as clothing or ceramics, and is used in the electronics industry to design electronic components such as electronic contacts or interconnects on the surface of substrates. The most advanced solar cell manufacturing process also uses a screen printing process. In some applications, it is desirable to screen contact lines, such as fingers 14, on a solar cell substrate. The fingers 14 are in contact with the substrate and are adapted to form an ohmic connection with one or more doped regions (e.g. , n-type emitter regions 22). An ohmic contact is a region on a semiconductor component that is fabricated such that the current-voltage (IV) curve of the component is linear and symmetrical, that is, there is no high-impedance interface between the doped germanium region of the semiconductor device and the metal contact. Low impedance and stable contact is extremely important for the performance of the solar cell and the stability of the circuitry formed in the solar cell fabrication process. In order to enhance contact with the solar cell elements, it is typical to place the fingers 14 on heavily doped regions 17 formed in the surface of the substrate such that ohmic contacts can be formed. Due to the formation of the heavily doped regions 17, due to their electrical characteristics, they tend to obstruct or minimize the light that can pass therethrough, thus making their regions large enough to ensure that the fingers 14 can be reliably aligned and formed It is desirable to minimize the size of the heavily doped regions while on them. Deposition fingers 14 due to substrate placement errors on the automated transfer device, substrate edge defects, unknown registration and alignment of heavily doped regions 17 on the substrate surface, and/or substrate offsets on the automated transfer device Misalignment with the heavily doped region 17 located below can result in poor component performance and low component performance. The heavily doped regions 17 can be formed on the surface of the substrate using a variety of patterning techniques to create heavier or lighter doped blocks, for example, by using a patterned diffusion barrier for the phosphorus diffusion step. The backside contact completes the electronic circuitry required for the solar cell to generate current by forming an ohmic contact with the p-type substrate region of the substrate.

因此，需要一種供太陽能電池、電子電路或其它有用的元件之生產所用的網板印刷裝置，其使用網板印刷或類似製程而具有將沉積的材料特徵(例如， 指狀物14)與重度摻雜區域對準的改良控制方法。Accordingly, there is a need for a screen printing apparatus for the production of solar cells, electronic circuits, or other useful components that uses screen printing or the like to have deposited material features (eg , fingers 14) with heavy doping. Improved control method for misalignment of miscellaneous areas.

於本發明之一具體實施例中，太陽能電池形成製程包括下列步驟：於基板接受表面上安置基板，其中該基板具有第一表面以及形成於其上之圖案化經摻雜區域；決定基板上之圖案化經摻雜區域的實際位置，其中決定實際位置包括下列步驟：朝向該第一表面發射電磁輻射，自該第一表面的一區域接收具第一波長之電磁輻射；使用接收自基板上圖案化經摻雜區域之決定的實際位置之資訊，將網板印刷遮罩中之一或一個以上特徵對準圖案化經摻雜區域；以及經過該一或一個以上特徵沉積材料層於圖案化經摻雜區域的至少一部分上。In a specific embodiment of the present invention, the solar cell forming process includes the steps of: disposing a substrate on a substrate receiving surface, wherein the substrate has a first surface and a patterned doped region formed thereon; Patterning the actual position of the doped region, wherein determining the actual position comprises the steps of: emitting electromagnetic radiation toward the first surface, receiving electromagnetic radiation having a first wavelength from a region of the first surface; using a pattern received from the substrate Information relating to the determined actual position of the doped region, aligning one or more features in the screen printing mask with the patterned doped region; and depositing a layer of material through the one or more features to pattern the On at least a portion of the doped region.

本發明之具體實施例可進一步提供一太陽能電池形成製程，包括下列步驟：於基板之第一表面上設置第一摻質材料構成圖案；當第一摻質材料設置於第一表面上，蝕刻第一表面的一部份；加熱基板以及第一摻質材料，以造成第一摻質材料中的摻質原子擴散進入第一表面並形成圖案化經摻雜區域；擷取圖案化經摻雜區域的一部分之光學影像；使用自該擷取的光學影像所接收的資訊，將網板印刷遮罩中的多個特徵對準圖案化經摻雜區域；以及經過該等特徵沉積一材料層於圖案化經摻雜區域的至少一部分上。A specific embodiment of the present invention may further provide a solar cell forming process, comprising the steps of: providing a first dopant material on a first surface of the substrate to form a pattern; and when the first dopant material is disposed on the first surface, etching a portion of a surface; heating the substrate and the first dopant material to cause dopant atoms in the first dopant material to diffuse into the first surface and form a patterned doped region; extracting the patterned doped region a portion of the optical image; aligning a plurality of features in the screen printing mask with the patterned doped regions using information received from the captured optical image; and depositing a layer of material over the pattern through the features At least a portion of the doped region.

本發明之具體實施例可進一步提供太陽能電池形成製程，其包括下列步驟：將第一量之第一摻質原子擴散進入基板之第一表面，以形成第一經摻雜區域；設置遮蔽材料於第一表面上構成圖案覆蓋第一經摻雜區域的至少一部份；當遮蔽材料設置於第一表面上，蝕刻第一表面的一部份；將第二量之第二摻質原子擴散進入第一表面，以在設置遮蔽材料於第一表面上並蝕刻第一表面的部份之後，形成第二經摻雜區域；擷取第一經摻雜區域的一部份及第二經摻雜區域的一部份之光學影像；使用自該擷取的光學影像所接收的資訊，將網板印刷遮罩中的多個特徵相應對準第一經摻雜區域的至少一部份；以及經過該等特徵沉積一材料層於第一經摻雜區域的至少一部份上。A specific embodiment of the present invention may further provide a solar cell forming process including the steps of: diffusing a first amount of first dopant atoms into a first surface of the substrate to form a first doped region; Forming a pattern on the first surface to cover at least a portion of the first doped region; when the masking material is disposed on the first surface, etching a portion of the first surface; diffusing the second amount of the second dopant atom into the first surface a first surface, after the shielding material is disposed on the first surface and etching the portion of the first surface, forming a second doped region; extracting a portion of the first doped region and the second doped An optical image of a portion of the region; using information received from the captured optical image to align a plurality of features in the screen printing mask with at least a portion of the first doped region; The features deposit a layer of material on at least a portion of the first doped region.

本發明之具體實施例可進一步提供一種太陽能電池形成製程，其包括下列步驟：蝕刻基板之第一表面的一部份；沉積第一層覆蓋該經蝕刻的第一表面之一部份；移除設置覆蓋經蝕刻的第一表面上之沉積的第一層之一部份，以暴露基板的一區域；傳送含摻質材料至基板的暴露區域，以於基板內形成經摻雜區域；擷取基板的第一表面之一部份的影像，其中該影像包括暴露的區域之一部份以及經蝕刻的第一表面之一部份；使用自該擷取的影像所接收的資訊，將網板印刷遮罩中的多個特徵對準暴露的區域；以及在該等特徵對準暴露的區域後，經過該等特徵沉積一材料層於圖案化經摻雜區域的至少一部份上。A specific embodiment of the present invention may further provide a solar cell forming process including the steps of: etching a portion of the first surface of the substrate; depositing a first layer covering a portion of the etched first surface; removing Providing a portion of the first layer overlying the deposited first surface to expose a region of the substrate; transferring the dopant-containing material to the exposed regions of the substrate to form a doped region within the substrate; An image of a portion of the first surface of the substrate, wherein the image includes a portion of the exposed area and a portion of the etched first surface; using the information received from the captured image, the stencil A plurality of features in the printed mask are aligned with the exposed regions; and after the features are aligned with the exposed regions, a layer of material is deposited over at least a portion of the patterned doped regions.

本發明之具體實施例可進一步提供一種用以處理基板的裝置，其包括基板支撐表面；電磁輻射源，其被安置以朝向基板支撐表面發射電磁輻射；偵測器組裝，其被安置以接收朝向設置於基板支撐表面上的基板之表面發射的電磁輻射之至少一部份，其中所接收的電磁輻射具一波長而被提供，該波長優先地藉由形成於基板之表面上的圖案化重度摻雜區域穿透傳輸或反射，或優先地藉由不包括圖案化重度摻雜區域的基板之多個區域穿透傳輸或反射；沉積腔室，具有網板印刷遮罩以及至少一個制動器，其被配置以定位該網板印刷遮罩；以及控制器，其被配置以自偵測器組裝接收關於形成於基板之表面上的圖案化重度摻雜區域的位置之訊號，其中該基板設置於該基板支撐表面上，並且根據自偵測器組裝所接收的資訊，調整網板印刷遮罩相對於圖案化重度摻雜區域的位置。A particular embodiment of the present invention may further provide an apparatus for processing a substrate comprising a substrate support surface; an electromagnetic radiation source disposed to emit electromagnetic radiation toward the substrate support surface; and a detector assembly positioned to receive the orientation At least a portion of electromagnetic radiation emitted from a surface of the substrate disposed on the support surface of the substrate, wherein the received electromagnetic radiation is provided with a wavelength that is preferentially heavily doped by patterning formed on the surface of the substrate The impurity region penetrates the transmission or reflection, or preferentially transmits or reflects through a plurality of regions of the substrate that do not include the patterned heavily doped region; the deposition chamber has a screen printing mask and at least one brake, which is Arranging to position the screen printing mask; and a controller configured to receive a signal from the detector assembly about a position of the patterned heavily doped region formed on a surface of the substrate, wherein the substrate is disposed on the substrate Adjusting the screen printing mask to be heavily doped with respect to the pattern on the support surface and based on information received from the detector assembly Position domain.

本發明之具體實施例可進一步提供一種太陽能電池形成製程，其包括下列步驟：設置第一摻質材料於基板之第一表面上，以形成圖案；加熱基板以及第一摻質材料，以造成第一摻質材料中的摻質原子擴散進入第一表面並形成圖案化經摻雜區域；蝕刻未被圖案化摻質材料覆蓋之表面區塊，並接著進行紋理區塊的較輕微擴散；以及最後擷取較平滑圖案化及重度摻雜區域之一部份的光學影像；使用自擷取的光學影像所接收的資訊，將網板印刷遮罩中的多個特徵對準圖案化經摻雜區域；以及經過該等特徵沉積一材料層於圖案化經摻雜區域的至少一部份上。於一配置中，蝕刻未由圖案化摻質材料覆蓋之表面區塊的製程包含下列步驟：使用最佳化的製程以提供強化吸光度之紋理。A specific embodiment of the present invention may further provide a solar cell forming process, comprising the steps of: disposing a first dopant material on a first surface of the substrate to form a pattern; heating the substrate and the first dopant material to cause a A dopant atom in a dopant material diffuses into the first surface and forms a patterned doped region; etches a surface block that is not covered by the patterned dopant material, and then performs a slight diffusion of the textured block; and finally Obtaining an optical image of a portion of the smoother patterned and heavily doped region; aligning the plurality of features in the stencil mask with the patterned doped region using information received from the captured optical image And depositing a layer of material over at least a portion of the patterned doped region via the features. In one configuration, the process of etching a surface block that is not covered by the patterned dopant material includes the step of using an optimized process to provide a texture that enhances the absorbance.

本發明之具體實施例可進一步提供一種用以處理基板的裝置，其包括基板支撐表面；電磁輻射源，其被安置以朝向基板支撐表面發射電磁輻射；偵測器組裝，其被安置以接收與設置於基板支撐表面上的基板之表面接觸的發射之電磁輻射的至少一部份，其中被接收的電磁輻射具一波長而被提供，該波長優先地藉由形成於基板之表面上的圖案化重度摻雜區域穿透傳輸或反射，或優先地藉由不包括圖案化重度摻雜區域的基板之多個區域穿透傳輸或反射；沉積腔室，具有網板印刷遮罩以及至少一個制動器，其被配置以定位該網板印刷遮罩；以及控制器，其被配置以自偵測器組裝接收關於形成於基板之表面上的圖案化重度摻雜區域的位置之訊號，其中該基板設置於該基板支撐表面上，並且根據自偵測器組裝所接收的資訊，調整網板印刷遮罩相對於圖案化重度摻雜區域的位置。Embodiments of the invention may further provide an apparatus for processing a substrate comprising a substrate support surface; a source of electromagnetic radiation disposed to emit electromagnetic radiation toward the substrate support surface; and a detector assembly positioned to receive Providing at least a portion of the emitted electromagnetic radiation that is disposed on a surface of the substrate on the substrate support surface, wherein the received electromagnetic radiation is provided with a wavelength that is preferentially patterned by the surface formed on the substrate The heavily doped region penetrates the transmission or reflection, or preferentially transmits or reflects through a plurality of regions of the substrate that do not include the patterned heavily doped region; the deposition chamber has a screen printed mask and at least one brake, It is configured to position the screen printing mask; and a controller configured to receive a signal from the detector assembly about a position of the patterned heavily doped region formed on a surface of the substrate, wherein the substrate is disposed on Adjusting the screen printing mask relative to the patterning weight on the substrate support surface and based on information received from the detector assembly Heteroaryl location area.

本發明之具體實施例提供於系統中處理基板的裝置及方法，該系統利用強化圖案化材料沉積製程序列，其可改善基板處理產線之元件產量表現以及經營成本(cost-of-ownership,CoO)。於一具體實施例中，該系統為網板印刷系統，其適於在結晶矽太陽能電池生產線的一部分內進行網板印刷製程，其中基板以所欲材料進行圖案化並接著於一或一個以上後續處理腔室中進行處理。後續處理腔室可適於進行一或一個以上烘烤步驟及一或一個以上清潔步驟。於一具體實施例中，該系統為安置於可由Baccini S.p.A.(由加州聖克拉拉(Santa Clara)的Applied Materials,Inc.所擁有)獲得的SoftlineTM 器具內之模組。儘管以下討論主要討論於太陽能電池元件的表面上進行網板印刷圖案(如內連線或接觸結構)的程序，這樣的配置並不意欲限制本文所描述之本發明的範疇。可受惠於本發明的其它基板材料包含可具有活性區域的基板，且該活性區域含有單晶矽、多重結晶(multi-crystalline)矽、多晶(polycrystalline)矽或其它理想的基板材料。Embodiments of the present invention provide an apparatus and method for processing a substrate in a system that utilizes a patterning process of enhanced patterned material deposition that improves component yield performance and operating cost of a substrate processing line (cost-of-ownership, CoO) ). In one embodiment, the system is a screen printing system adapted to perform a screen printing process within a portion of a crystalline germanium solar cell production line, wherein the substrate is patterned with the desired material and then followed by one or more subsequent Processing is carried out in the processing chamber. The subsequent processing chamber may be adapted to perform one or more baking steps and one or more cleaning steps. In one embodiment, the system is a module disposed within a Softline (TM) device obtainable by Baccini SpA (owned by Applied Materials, Inc. of Santa Clara, California). Although the following discussion primarily discusses procedures for screen printing patterns (such as interconnects or contact structures) on the surface of solar cell components, such configurations are not intended to limit the scope of the invention described herein. Other substrate materials that may benefit from the present invention comprise a substrate that may have active regions, and that the active regions comprise single crystal germanium, multi-crystalline germanium, polycrystalline germanium or other desirable substrate materials.

強化光學檢驗系統Enhanced optical inspection system

本發明之具體實施例大體上也提供了一種創新的太陽能電池形成製程，其包含形成金屬接觸，其覆蓋形成於基板之表面上的期望圖案230中的重度摻雜區域241上。本發明之具體實施例也提供檢驗系統以及支撐硬體，其被使用以可靠地將類似形狀或圖案化的金屬接觸結構安置於圖案化重度摻雜區域上，以容許構成歐姆接觸。第2A圖為基板250的表面251的平面視圖，其具有 重度摻雜區域241以及圖案化金屬接觸結構242形成於其上，如指狀物260。第2B圖為繪示於第2A圖中的剖面線2B-2B處所創造的側邊剖面視圖，並圖解具有金屬指狀物260設置於重度摻雜區域241上之表面251的一部分。如上所討論，金屬接觸結構，如指狀物260以及匯電條261，形成於重度摻雜區域241上，因而高品質電氣連接可被形成於這兩個區域之間。低阻抗且穩定的接觸對太陽能電池的表現而言是極為重要的。重度摻雜區域241通常包括基板250的一部分，其具有少於約每平方面積50歐姆(Ω/□)之薄片電阻。於一具體實施例中，重度摻雜區域241形成於矽基板中，且具有大於約1018 原子/cm3 之摻雜程度。藉由熟知於本發明所屬技術領域之慣用平版及離子佈植技術，或慣用介電遮蔽(dielectric masking)以及高溫爐擴散技術，可形成重度摻雜區域241的圖案化型態。然而，既然使用慣用技術通常無法輕易地偵測形成於基板250的表面251上的重度摻雜區域241圖案的實際對準及定向，使用慣用的技術難以進行將金屬接觸結構242對準及沉積於重度摻雜區域241上之製程。據信，在形成於基板250中的重度以及輕度經摻雜區域被抗反射塗佈層覆蓋後，特別難以具備偵測所形成的重度摻雜區域241圖案之實際對準及定向的能力。Embodiments of the present invention also generally provide an innovative solar cell forming process that includes forming a metal contact over a heavily doped region 241 formed in a desired pattern 230 on a surface of a substrate. Embodiments of the present invention also provide an inspection system and support hardware that is used to reliably place a similarly shaped or patterned metal contact structure on the patterned heavily doped regions to allow for ohmic contact. 2A is a plan view of surface 251 of substrate 250 having heavily doped regions 241 and patterned metal contact structures 242 formed thereon, such as fingers 260. 2B is a side cross-sectional view created at section line 2B-2B in FIG. 2A and illustrating a portion of surface 251 having metal fingers 260 disposed on heavily doped region 241. As discussed above, metal contact structures, such as fingers 260 and bus bar 261, are formed on heavily doped regions 241 such that a high quality electrical connection can be formed between the two regions. Low impedance and stable contact is extremely important for the performance of solar cells. The heavily doped region 241 typically includes a portion of the substrate 250 that has a sheet resistance of less than about 50 ohms per square meter (Ω/□). In one embodiment, the heavily doped regions 241 are formed in the germanium substrate and have a doping level greater than about 10 18 atoms/cm 3 . The patterned pattern of the heavily doped regions 241 can be formed by conventional lithographic and ion implantation techniques well known in the art to which the present invention pertains, or by conventional dielectric masking and high temperature furnace diffusion techniques. However, since the actual alignment and orientation of the pattern of heavily doped regions 241 formed on the surface 251 of the substrate 250 is generally not readily detectable using conventional techniques, it is difficult to align and deposit the metal contact structures 242 using conventional techniques. The process on the heavily doped region 241. It is believed that after the heavily and lightly doped regions formed in the substrate 250 are covered by the anti-reflective coating layer, it is particularly difficult to have the ability to detect the actual alignment and orientation of the heavily doped regions 241 formed.

本發明之具體實施例因而提供了方法，其先偵測圖案化重度摻雜區域241的實際對準及定向，並接著使用所蒐集的資訊於重度摻雜區域241的表面上形成圖案化金屬接觸。第4A圖繪示光學檢驗系統400之一具體實施例，光學檢驗系統400被配置來決定行成於基板250的表面的(複數)重度摻雜區域241的圖案230之實際對準及定向。光學檢驗系統400通常含有一或一個以上電磁輻射源，如輻射源402及403，其被配置來發射具期望波長之輻射；以及偵測器組裝401，其被配置來擷取反射的或未被吸收的輻射，使得重度摻雜區域241之對準及定向可對應基板250的其它非重度摻雜區域而被光學地決定。藉由偵測器組裝401所收集的定向及對準資料接著傳送至系統控制器101，其被配置來調整及控制藉由使用圖案金屬化技術進行之重度摻雜區域241表面上的金屬接觸結構，如指狀物260，的配置。圖案金屬化技術可包含網板印刷製程、噴墨印刷製程、平板及圍包金屬(blanket metal)沉積製程，或其它類似圖案金屬化製程。於一具體實施例中，使用於網板印刷系統100中進行之網板印刷製程將金屬接觸設置於基板250的表面上，如下連同第3A至3D圖一同討論。Embodiments of the present invention thus provide a method of first detecting the actual alignment and orientation of the patterned heavily doped regions 241 and then using the collected information to form patterned metal contacts on the surface of the heavily doped regions 241. . FIG. 4A illustrates one embodiment of an optical inspection system 400 that is configured to determine the actual alignment and orientation of the pattern 230 of the (plural) heavily doped regions 241 that are formed on the surface of the substrate 250. Optical inspection system 400 typically includes one or more sources of electromagnetic radiation, such as radiation sources 402 and 403, configured to emit radiation having a desired wavelength, and a detector assembly 401 configured to capture reflections or not The absorbed radiation is such that the alignment and orientation of the heavily doped regions 241 can be optically determined corresponding to other non-heavy doped regions of the substrate 250. The orientation and alignment data collected by detector assembly 401 is then passed to system controller 101, which is configured to adjust and control the metal contact structure on the surface of heavily doped region 241 by pattern metallization techniques. , such as the configuration of the fingers 260. Pattern metallization techniques can include screen printing processes, inkjet printing processes, flat and blanket metal deposition processes, or other similar pattern metallization processes. In one embodiment, a screen printing process performed in screen printing system 100 places metal contacts on the surface of substrate 250, as discussed below in conjunction with Figures 3A through 3D.

於重度摻雜區域241形成於矽基板內的配置中，據信，具處於紫外線(UV)及紅外線(IR)波長區間內之波長的被發射電磁輻射，將優先被矽基板或重度摻雜區域吸收、反射或傳送。被發射輻射之傳送、吸收或反射的差異可因而被使用來創造某些有跡可循的對比，其可藉由偵測器組裝401及系統控制器101進行解析。於一具體實施例中，發射波長介於約850 nm及4微米(μm)之間的電磁輻射是理想的。於一具體實施例中，輻射源402及403的一或一個以上為發光二極體(LEDs)，其適於傳遞具一或一個以上期望波長的光。In the configuration in which the heavily doped regions 241 are formed in the germanium substrate, it is believed that the emitted electromagnetic radiation having wavelengths in the ultraviolet (UV) and infrared (IR) wavelength intervals will preferentially be plated or heavily doped regions. Absorb, reflect or transmit. The difference in transmission, absorption or reflection of the emitted radiation can thus be used to create some traceable contrast that can be resolved by the detector assembly 401 and the system controller 101. In one embodiment, electromagnetic radiation having an emission wavelength between about 850 nm and 4 micrometers (μm) is desirable. In one embodiment, one or more of the radiation sources 402 and 403 are light emitting diodes (LEDs) adapted to deliver light having one or more desired wavelengths.

於一具體實施例中，光學檢驗系統400具有輻射源402，其被配置來傳遞電磁輻射「B1 」至基板250的表面252，其與設置有偵測器組裝401的基板側面相對。於一實例中，輻射源402設置於相鄰太陽能電池基板250的後側處，且偵測器組裝401設置於相鄰基板250的前表面處。在這樣的配置中，理想的情況是使用大於矽的吸收邊界，如大於約1060 nm之光學輻射，以容許發射的電磁輻射「B1 」通過基板250並沿著路徑「C」被傳遞至偵測器組裝401。據信，因於重度摻雜區域之高摻雜程度(例如， >1018 原子/cm3 )對比通常用於太陽能電池應用中的典型輕度摻雜矽基板(例如， <1017 原子/cm3 )之故，在此等波長內，各此等區域的吸收或傳送特性將顯著不同。於一具體實施例中，理想的是將發射波長限定於約1.1 μm及約1.5 μm之間。於一實例中，重度摻雜區域具有至少每平方面積50歐姆之薄片電阻。In one particular embodiment, the optical inspection system 400 has a radiation source 402, which is configured to deliver electromagnetic radiation "B 1" 250 to the substrate surface 252, which is provided with a detector assembly 401 opposite side of the substrate. In one example, the radiation source 402 is disposed at a rear side of the adjacent solar cell substrate 250, and the detector assembly 401 is disposed at a front surface of the adjacent substrate 250. In such a configuration, it is desirable to use an absorption boundary greater than 矽, such as optical radiation greater than about 1060 nm, to allow the emitted electromagnetic radiation "B 1 " to pass through the substrate 250 and be passed along the path "C" to the Detector. The detector assembly 401. It is believed that the high doping level ( eg, >10 18 atoms/cm 3 ) due to heavily doped regions is compared to typical lightly doped germanium substrates commonly used in solar cell applications (eg , <10 17 atoms/cm). 3 ) For these wavelengths, the absorption or transmission characteristics of each of these regions will be significantly different. In one embodiment, it is desirable to limit the emission wavelength to between about 1.1 μm and about 1.5 μm. In one example, the heavily doped regions have a sheet resistance of at least 50 ohms per square area.

於光學檢驗系統400的另一具體實施例中，輻射源403被配置來傳遞電磁輻射「B2 」至基板250的表面251，其與偵測器組裝401位於基板的同一側面上，使得一或一個以上發射的波長被基板250或重度摻雜區域241的部份吸收或反射，並沿著路徑「C」被傳遞至攝影機。在這樣的配置中，理想的是發射具約300 nm及4微米(μm)間之波長的光學輻射，直到介於該等區域間的期望對比可由偵測器組裝401偵測為止。於一實例中，理想的是發射具約850 nm及4微米(μm)間之波長的光學輻射。於另一實例中，理想的是使用輻射源403，其發射較短波長的光，如於藍光至近UV光的範圍中的波長(例如，300-450 nm)，這是因為，據信，當使用反射型態模式光學偵測技術時，此範圍將提供強化的光學對比。In another embodiment of the optical inspection system 400, the radiation source 403 is configured to deliver electromagnetic radiation "B 2" substrate surface 251 to 250, with the detector assembly 401 is located on the same side of the substrate, such that one or More than one emitted wavelength is absorbed or reflected by portions of substrate 250 or heavily doped region 241 and is transmitted to the camera along path "C". In such a configuration, it is desirable to emit optical radiation having a wavelength between about 300 nm and 4 micrometers (μm) until the desired contrast between the regions is detectable by the detector assembly 401. In one example, it is desirable to emit optical radiation having a wavelength between about 850 nm and 4 micrometers (μm). In another example, it is desirable to use a radiation source 403 that emits light of a shorter wavelength, such as a wavelength in the range of blue to near-UV light (eg, 300-450 nm), because, it is believed, when This range provides enhanced optical contrast when using reflective mode optical detection techniques.

於光學檢驗系統400之一具體實施例中，兩個輻射源402及403，以及一或一個以上偵測器組裝401被使用來協助進一步偵測基板250的表面上之重度摻雜區域241的圖案。在這樣的例子中，可能理想的是配置輻射源402及403，使它們發射具相同或不同波長的輻射。In one embodiment of optical inspection system 400, two radiation sources 402 and 403, and one or more detector assemblies 401 are used to assist in further detecting the pattern of heavily doped regions 241 on the surface of substrate 250. . In such an example, it may be desirable to configure radiation sources 402 and 403 such that they emit radiation having the same or different wavelengths.

偵測器組裝401包含電磁輻射偵測器、攝影機或其它類似元件，其被配置來量測具一或一個以上波長之被接收電磁輻射的強度。於一具體實施例中，偵測器組裝401包含攝影機401A，其被配置以在藉由一或一個以上輻射源402或403所發射的波長範圍內，偵測並解析基板的表面上之特徵。於一具體實施例中，攝影機401A為InGaAs型態攝影機，其具有經冷卻CCD陣列，以增進偵測訊號的訊號對雜訊比例。於某些配置中，理想的是藉由包圍或屏蔽基板250的表面251及攝影機401A之間的區塊，將偵測器組裝401與周圍光線分離。The detector assembly 401 includes an electromagnetic radiation detector, camera or other similar component configured to measure the intensity of the received electromagnetic radiation having one or more wavelengths. In one embodiment, the detector assembly 401 includes a camera 401A configured to detect and resolve features on the surface of the substrate over a range of wavelengths emitted by one or more radiation sources 402 or 403. In one embodiment, camera 401A is an InGaAs type camera having a cooled CCD array to enhance the signal-to-noise ratio of the detected signal. In some configurations, it is desirable to separate the detector assembly 401 from ambient light by enclosing or shielding the surface between the surface 251 of the substrate 250 and the camera 401A.

於一具體實施例中，偵測器組裝401也包含一或一個以上光學濾波器(未繪示)，其被設置於攝影機401A及基板250的表面之間。在這樣的配置中，(複數)光學濾波器被選擇以容許僅有某些期望波長通過至攝影機401A，以降低被攝影機401A接收的非所欲能量的量，以增進偵測訊號的訊號對雜訊比例。(複數)光學濾波器可為，舉例而言，向Barr Associates,Inc.或Andover Corporation購買之帶通濾波器、窄帶濾波器、光學邊緣濾波器(optical edge filter)、陷波濾波器(notch filter)或寬帶濾波器。於本發明之另一方面，光學濾波器被加入至輻射源402或403與基板250之間，以限制投影至基板上並由攝影機401A偵測的波長。在這樣的配置中，可能理想的是選擇可傳遞大範圍波長的輻射源402或403，並使用濾波器來限制撞擊基板表面的波長。In one embodiment, the detector assembly 401 also includes one or more optical filters (not shown) disposed between the camera 401A and the surface of the substrate 250. In such a configuration, the (plural) optical filter is selected to allow only certain desired wavelengths to pass to the camera 401A to reduce the amount of unwanted energy received by the camera 401A to enhance the signal-to-detection of the detected signal. News ratio. The (plural) optical filter can be, for example, a band pass filter, a narrow band filter, an optical edge filter, or a notch filter purchased from Barr Associates, Inc. or Andover Corporation. ) or broadband filter. In another aspect of the invention, an optical filter is added between the radiation source 402 or 403 and the substrate 250 to limit the wavelength projected onto the substrate and detected by the camera 401A. In such a configuration, it may be desirable to select a radiation source 402 or 403 that can deliver a wide range of wavelengths and use a filter to limit the wavelength of the surface that strikes the substrate.

第3A圖為概要等角視圖，而第3B圖為概要頂部平面圖，繪示網板印刷系統或系統100之一具體實施例，其可與本發明之具體實施例一起使用，該具體實施例使用光學檢驗系統400於太陽能電池基板250的表面上形成期望圖案的金屬接觸。於一具體實施例中，系統100包括引入輸送帶111、轉動制動器組裝130、網板印刷腔室102以及引出輸送帶112。引入輸送帶111可被配置以自輸入裝置，如輸入輸送帶113，接受複數個皮帶116上的基板250(即，第3B圖中的路徑「A」)，並傳送基板250至連接轉動制動器組裝130的印刷巢(printing nest)131。引出輸送帶112可被配置來自連接轉動制動器組裝130的印刷巢131接受經處理基板250，並傳送基板250至基板移出裝置，如出口輸送帶114(即，第3B圖中的路徑「E」)。輸入輸送帶113以及出口輸送帶114可為自動化基板搬運裝置，其為較大產品線的部分。舉例而言，輸入輸送帶113以及出口輸送帶114可為SoftlineTM 工具的部分，其中系統100可為其中之一模組。3A is a schematic isometric view, and FIG. 3B is a schematic top plan view showing one embodiment of a screen printing system or system 100 that can be used with embodiments of the present invention, which is used in this embodiment Optical inspection system 400 forms a metal contact of a desired pattern on the surface of solar cell substrate 250. In one embodiment, system 100 includes an introduction conveyor belt 111, a rotary brake assembly 130, a screen printing chamber 102, and an extraction conveyor belt 112. The introduction conveyor belt 111 can be configured to receive the substrate 250 on the plurality of belts 116 (i.e., the path "A" in FIG. 3B) from the input device, such as the input conveyor belt 113, and transport the substrate 250 to the connection rotary brake assembly. 130 printing nest (131). The take-up conveyor belt 112 can be configured to receive the processed substrate 250 from the printing nest 131 that connects the rotary brake assembly 130, and transport the substrate 250 to the substrate removal device, such as the exit conveyor belt 114 (ie, path "E" in Figure 3B). . The input conveyor belt 113 and the outlet conveyor belt 114 can be automated substrate handling devices that are part of a larger product line. For example, the input conveyor 113 and exit conveyor 114 may be part Softline TM tool, wherein the system 100 may be one of the module.

轉動制動器組裝130可藉由轉動制動器(未繪示)及系統控制器101而被轉動，並對「F」軸進行角度定向，致使印刷巢131可於系統100內進行選擇性角度定向(例如， 第3B圖中的路徑「D1 」以及「D2 」)。轉動制動器組裝130也可具有一或一個以上支撐組件，以促進對進行系統100中之基板製程序列的印刷巢131或其它自動化裝置的控制。The rotary brake assembly 130 can be rotated by rotating a brake (not shown) and the system controller 101, and angularly orienting the "F" axis such that the print nest 131 can be selectively angularly oriented within the system 100 ( eg, The paths "D 1 " and "D 2 ") in Fig. 3B. The rotary brake assembly 130 can also have one or more support assemblies to facilitate control of the print nest 131 or other automated device that performs the substrate programming in the system 100.

於一具體實施例中，轉動制動器組裝130包含四個印刷巢131或基板支撐件，其分別適於在網板印刷腔室102內進行的網板印刷製程期間支撐基板250。第3B圖概略地繪示轉動制動器組裝130的位置，其中一個印刷巢131處於位置「1」，以自引入輸送帶111接受基板250，另一印刷巢131處於網板印刷腔室102內的位置「2」，使得另一基板250可於其表面上接受網板印刷圖案，另一印刷巢131處於位置「3」，用以傳送經處理基板250至引出輸送帶112，且另一印刷巢131處於位置「4」，其為位置「1」及位置「3」之間的中間階段。In one embodiment, the rotary brake assembly 130 includes four printing nests 131 or substrate supports that are respectively adapted to support the substrate 250 during a screen printing process performed within the screen printing chamber 102. 3B schematically illustrates the position of the rotary brake assembly 130 in which one printing nest 131 is in position "1" to receive the substrate 250 from the introduction conveyor 111 and the other printing nest 131 is in the screen printing chamber 102. "2", so that the other substrate 250 can receive the screen printing pattern on the surface thereof, and the other printing nest 131 is at the position "3" for conveying the processed substrate 250 to the leading conveyor belt 112, and the other printing nest 131 At position "4", it is an intermediate stage between position "1" and position "3".

如第3C圖所繪示，印刷巢131通常由輸送帶組裝139所組成，輸送帶組裝139具有進料捲軸135、捲取捲軸(take-up spool) 136、滾輪140以及一或一個以上制動器148，其連接進料捲軸135及/或捲取捲軸136，其適於進料並維持支撐材料137跨越平臺138而定向。平臺138通常具有基板支撐表面，於網板印刷腔室102中進行網板印刷製程期間，基板250以及支撐材料137安置於基板支撐表面上。於一具體實施例中，支撐材料137為多孔材料，藉由慣用的真空產生裝置(例如， 真空泵、真空擠出器)施加真空於支撐材料137的相對側，支撐材料137可容許設置於支撐材料137之一側的基板250被維持於平臺138上。於一具體實施例中，真空被施加於形成在平臺138的基板支撐表面138A中的真空埠(未繪示)，使得基板可被「夾持(chuck)」至平臺的基板支撐表面138A。於一具體實施例中，支撐材料137為可發散材料，其由，例如，用於香菸的發散紙(transpirable paper)類型或其它表現相同功能的類似材料，如塑膠狀物或紡織材料，所組成。於一實例中，支撐材料137為香菸紙，其不含苯線(benzene line)。As depicted in FIG. 3C, the printing nest 131 is typically comprised of a conveyor belt assembly 139 having a feed spool 135, a take-up spool 136, a roller 140, and one or more brakes 148. It is connected to a feed reel 135 and/or a take-up reel 136 that is adapted to feed and maintain the support material 137 oriented across the platform 138. The platform 138 typically has a substrate support surface upon which the substrate 250 and the support material 137 are disposed during the screen printing process in the screen printing chamber 102. In one embodiment, the support material 137 is a porous material, and a vacuum is applied to the opposite side of the support material 137 by a conventional vacuum generating device ( eg, a vacuum pump, a vacuum extruder), and the support material 137 can be allowed to be disposed on the support material. The substrate 250 on one side of the 137 is maintained on the platform 138. In one embodiment, a vacuum is applied to a vacuum crucible (not shown) formed in the substrate support surface 138A of the platform 138 such that the substrate can be "chucked" to the substrate support surface 138A of the platform. In one embodiment, the support material 137 is a divergent material composed of, for example, a transpirable paper type for cigarettes or other similar material that exhibits the same function, such as a plastic or textile material. . In one example, the support material 137 is a cigarette paper that does not contain a benzene line.

於一配置中，制動器148被連接至，或適於銜接進料捲軸135及捲取捲軸136，使得安置於支撐材料137上的基板250之移動可於印刷巢131內受到精確地控制。於一具體實施例中，進料捲軸135及捲取捲軸136分別適於接受支撐材料137之長邊的相對側。於一具體實施例中，制動器148分別含有一或一個以上驅動輪147，其連接至安置於進料捲軸135及/或捲取捲軸136上的支撐材料137的表面，或與支撐材料137的表面接觸，以控制支撐材料137跨越平臺138上的動作及位置。In one configuration, the brake 148 is coupled to, or adapted to engage, the feed spool 135 and the take-up spool 136 such that movement of the substrate 250 disposed on the support material 137 can be accurately controlled within the print nest 131. In one embodiment, the feed spool 135 and the take-up spool 136 are each adapted to receive opposite sides of the long sides of the support material 137. In one embodiment, the brakes 148 respectively include one or more drive wheels 147 that are coupled to the surface of the support material 137 disposed on the feed spool 135 and/or the take-up spool 136, or to the surface of the support material 137. Contact to control the action and position of the support material 137 across the platform 138.

於一具體實施例中，系統100包含檢驗組裝200，其適於檢驗位在印刷巢131上的位置「1」中的基板250。檢驗組裝200可包含一或一個以上攝影機121，其被安置以檢驗位於印刷巢131上的位置「1」中的引入或經處理基板250。在這樣的配置中，檢驗組裝200包含至少一攝影機121(例如， CCD攝影機)以及其它能檢驗並與系統控制器101溝通檢驗結果的電子組件，系統控制器101被使用來分析印刷巢131上之基板250的定向及位置。於另一具體實施例中，檢驗組裝200包括如上所討論之光學檢驗系統400。In one embodiment, system 100 includes a test assembly 200 that is adapted to inspect substrate 250 in position "1" on print nest 131. The inspection assembly 200 can include one or more cameras 121 that are positioned to inspect the introduced or processed substrate 250 in position "1" on the printing nest 131. In such a configuration, the inspection assembly 200 includes at least one camera 121 (e.g. , a CCD camera) and other electronic components that can verify and communicate inspection results with the system controller 101, which is used to analyze the print nest 131. Orientation and position of the substrate 250. In another embodiment, inspection assembly 200 includes optical inspection system 400 as discussed above.

網板印刷腔室102適於在網板印刷製程期間，沉積期望圖案的材料於安置在印刷巢131上的位置「2」中的基板250的表面上。於一具體實施例中，網板印刷腔室102包含複數個制動器，舉例而言，制動器102A(例如， 步進馬達或伺服馬達)，其與系統控制器101溝通，並被用來調整設置於網板印刷腔室102內，關於將被印刷之基板250的網板印刷遮罩102B(第3B圖)之位置及/或角定向。於一具體實施例中，網板印刷遮罩102B為具複數個特徵102C(第3B圖)，如孔洞、槽(slot)或其它透過其形成之開孔的金屬薄片或板，以定義圖案及在基板250的表面上的網板印刷材料(即， 墨水或糊狀物(糊狀物))之安置。通常，藉由使用制動器102A以及由系統控制器101自檢驗組裝200接收的資訊，將網板印刷遮罩102B定位於基板表面上的期望位置，將沉積於基板250的表面上之網板印刷圖案以自動化方式對準至基板250。於一具體實施例中，網板印刷腔室102適於沉積含金屬或含介電質材料於太陽能電池基板上，且該太陽能電池基板具有介於約125mm至156mm之寬度及介於約70mm至156mm之長度。於一具體實施例中，網板印刷腔室102適於在基板之表面上沉積含金屬糊狀物，以於基板之表面上形成金屬接觸結構。The screen printing chamber 102 is adapted to deposit a desired pattern of material on the surface of the substrate 250 disposed in position "2" on the printing nest 131 during the screen printing process. In one embodiment, the screen printing chamber 102 includes a plurality of brakes, for example, a brake 102A (eg , a stepper motor or a servo motor) that communicates with the system controller 101 and is used to adjust the settings to In the screen printing chamber 102, the position and/or the angle of the screen printing mask 102B (Fig. 3B) of the substrate 250 to be printed is oriented. In one embodiment, the screen printing mask 102B is a metal sheet or plate having a plurality of features 102C (FIG. 3B), such as holes, slots, or other openings formed therethrough, to define a pattern and The placement of the screen printing material (i.e. , ink or paste (paste)) on the surface of the substrate 250. Typically, the screen printing mask 102B is positioned at a desired location on the surface of the substrate by using the brake 102A and the information received by the system controller 101 from the inspection assembly 200, and the screen printing pattern deposited on the surface of the substrate 250. Aligned to substrate 250 in an automated manner. In a specific embodiment, the screen printing chamber 102 is adapted to deposit a metal-containing or dielectric-containing material on the solar cell substrate, and the solar cell substrate has a width of between about 125 mm and 156 mm and between about 70 mm to 156mm in length. In one embodiment, the screen printing chamber 102 is adapted to deposit a metal-containing paste on the surface of the substrate to form a metal contact structure on the surface of the substrate.

系統控制器101促進整體系統100的控制及自動化，且可包含中央處理單元(CPU)(未繪示)、記憶體(未繪示)以及支撐電路(或I/O)(未繪示)。CPU可為任何形式的電腦處理器之一，其可被使用於工業設定，以控制多個腔室製程及硬體(例如，輸送帶、光學檢驗組裝、馬達、流體傳遞硬體等)，並監視系統以及腔室製程(例如， 基板位置、製程時間、偵測器訊號等)。記憶體連接至CPU，且可為一或一個以上輕易可得的記憶體，如隨機存取記憶體(RAM)、唯讀記憶體(ROM)、軟碟、硬碟或任何其它形式的本地或遠端數位儲存器。軟體指令以及資料可被編碼並儲存於記憶體內，用以命令CPU。支撐電路也連接至CPU，用來以慣用的手段支撐處理器。支撐電路可包含緩存、電源供應器、時脈電路、輸入/輸出電路系統、次系統及類似電路。程式(或電腦指令)可被系統控制器101讀取，以判斷哪個任務可被執行於基板上。較佳地，程式可藉由系統控制器101而為軟體可讀取的，系統控制器101包含程式碼，以產生並儲存至少基板位置資訊、多種受控制組件的移動順序、基板光學檢驗系統資訊以及其任何組合。於本發明之一具體實施例中，系統控制器101包含圖案識別軟體，以解析重度摻雜區域241及/或對準標記801的位置，如隨後關於第4A至4B、9A至9D及10圖所描述。The system controller 101 facilitates control and automation of the overall system 100, and may include a central processing unit (CPU) (not shown), a memory (not shown), and a support circuit (or I/O) (not shown). The CPU can be one of any form of computer processor that can be used in industrial settings to control multiple chamber processes and hardware (eg, conveyor belts, optical inspection assemblies, motors, fluid transfer hardware, etc.), and Monitoring system and chamber process (eg , substrate position, process time, detector signal, etc.). The memory is connected to the CPU and can be one or more readily available memory such as random access memory (RAM), read only memory (ROM), floppy disk, hard disk or any other form of local or Remote digital storage. Software instructions and data can be encoded and stored in memory to command the CPU. The support circuit is also connected to the CPU for supporting the processor in a conventional manner. The support circuit can include a buffer, a power supply, a clock circuit, an input/output circuit system, a subsystem, and the like. Programs (or computer instructions) can be read by system controller 101 to determine which tasks can be executed on the substrate. Preferably, the program is software readable by the system controller 101, and the system controller 101 includes code to generate and store at least the substrate position information, the movement order of the plurality of controlled components, and the substrate optical inspection system information. And any combination thereof. In one embodiment of the invention, system controller 101 includes pattern recognition software to resolve the locations of heavily doped regions 241 and/or alignment marks 801, as subsequently described with respect to sections 4A through 4B, 9A through 9D, and 10 Described.

為了在形成圖案化導電層於基板表面251上之前，直接決定形成於基板表面251上的重度摻雜區域241之對準及定向，系統控制器101可使用一或一個以上光學檢驗系統400以收集期望的資料。第4B圖繪示光學檢驗系統400的一個具體實施例，其被併入印刷巢131及光學檢驗組裝200的部分。於一具體實施例中，檢驗組裝200包括攝影機401A，且印刷巢131包括輸送帶組裝139、支撐材料137、平臺138及輻射源402。在這樣的配置中，輻射源402適於發射電磁輻射「B1 」，透過支撐材料137及平臺138至基板250的表面252，其中基板250被「夾持」。發射的電磁輻射「B1 」接著通過基板的位置並沿著路徑「C」至攝影機401A，其被安置以接收發射的輻射之一部份。通常，支撐材料137及平臺138由多種材料製成，且其具有之厚度不會顯著影響由攝影機401A及系統控制器101接收並處理的電磁輻射之訊號對雜訊比例。於一具體實施例中，平臺138以光學透明材料形成，所述材料如藍寶石，其不會顯著阻礙光的UV及IR波長。如上所討論，於另一具體實施例中，輻射源403被配置來傳遞電磁輻射「B2 」至位於支撐材料137及平臺138上的基板250的表面251，使得放射波長的一或一個以上將藉由基板250的部份被吸收或反射，並延著路徑「C」被傳遞至攝影機401A。In order to directly determine the alignment and orientation of the heavily doped regions 241 formed on the substrate surface 251 prior to forming the patterned conductive layer on the substrate surface 251, the system controller 101 may use one or more optical inspection systems 400 to collect Expected information. FIG. 4B illustrates a particular embodiment of optical inspection system 400 that is incorporated into portions of printing nest 131 and optical inspection assembly 200. In one embodiment, the inspection assembly 200 includes a camera 401A, and the printing nest 131 includes a conveyor belt assembly 139, a support material 137, a platform 138, and a radiation source 402. In such a configuration, the radiation source 402 adapted to emit electromagnetic radiation "B 1", the surface 252 through the supporting material 138 to the substrate 137 and the internet 250, wherein substrate 250 is "clamped." The emitted electromagnetic radiation "B 1" and then "C" to the camera position 401A along the path through the substrate, which is arranged in one part of the radiation emitted by the receiver. Typically, the support material 137 and the platform 138 are made of a variety of materials and have a thickness that does not significantly affect the signal-to-noise ratio of the electromagnetic radiation received and processed by the camera 401A and the system controller 101. In one embodiment, the platform 138 is formed from an optically transparent material, such as sapphire, which does not significantly impede the UV and IR wavelengths of the light. As discussed above, in another embodiment, the radiation source 403 is configured to deliver electromagnetic radiation "B 2" to the surface of the substrate and positioned on the platen 138 250 137 251 supporting material, such that one or more a wavelength of the radiation The portion of the substrate 250 is absorbed or reflected, and is transmitted to the camera 401A via the path "C".

第3D圖為轉動制動器組裝130之一具體實施例的概要等角視圖，其繪示檢驗組裝200，其被安置以檢驗設置於印刷巢131上之基板250的表面251。於一具體實施例中，攝影機401A被安置於基板250的表面251上方，使得攝影機121之觀察區塊122可檢驗表面251的至少一區域。由攝影機401A所接收的資訊被使用來對準網板印刷遮罩，並因此藉著自系統控制器101傳送到制動器102A的指令之使用，接著沉積材料至重度摻雜區域241。於正常製程順序期間，在基板250被傳遞至網板印刷腔室102之前，重度摻雜區域241位置訊息資料針對安置於各印刷巢131上的各基板250而被收集。檢驗組裝200也可包含複數個光學檢驗系統400，其適於觀察安置於印刷巢131上的基板250之不同區塊，以協助更好的解析形成於基板上的圖案230。第10圖繪示光學檢驗系統400之一配置，其具有複數個攝影機401B至401D，其被安置以觀察基板250的表面251上之形成圖案230的不同位置。於一具體實施例中，各該等攝影機401B至401D被安置以觀察被形成圖案230及/或形成於表面251上的一或一個以上對準標記801(第10圖)之不同位置。3D is a schematic isometric view of one embodiment of a rotary brake assembly 130 showing a test assembly 200 that is positioned to inspect the surface 251 of the substrate 250 disposed on the printing nest 131. In one embodiment, camera 401A is disposed over surface 251 of substrate 250 such that viewing block 122 of camera 121 can inspect at least one region of surface 251. The information received by camera 401A is used to align the screen printing mask and thus by the use of instructions from system controller 101 to brake 102A, followed by deposition of material to heavily doped region 241. During the normal process sequence, the heavily doped region 241 positional information is collected for each of the substrates 250 disposed on each of the printing nests 131 before the substrate 250 is transferred to the screen printing chamber 102. The inspection assembly 200 can also include a plurality of optical inspection systems 400 adapted to view different blocks of the substrate 250 disposed on the printing nest 131 to assist in better resolution of the pattern 230 formed on the substrate. FIG. 10 illustrates one configuration of an optical inspection system 400 having a plurality of cameras 401B through 401D positioned to view different locations of the pattern 230 formed on the surface 251 of the substrate 250. In one embodiment, each of the cameras 401B through 401D is positioned to view different locations of the pattern 230 and/or one or more alignment marks 801 (FIG. 10) formed on the surface 251.

太陽能電池形成製程Solar cell forming process

本發明之具體實施例也通常提供創新的太陽能電池形成製程，其包含強化的前側金屬化製程，以創造較高性能之太陽能電池元件。慣用的前側金屬化沉積製程包含重度摻雜區域上之金屬接觸結構(例如，指狀物及匯電條)的形成，該重度摻雜區域設置於太陽能電池基板的紋理化前表面內。典型的紋理化製程提供具有約1微米(μm)至約10 μm之粗糙度的表面。被使用來於紋理化表面上形成指狀物及匯電條之含金屬材料的沉積可大大影響被形成之指狀物及匯電條的電阻，這是由於沉積的金屬需涵蓋的表面積相對於未紋理化表面增加的緣故。同樣，紋理化表面的粗糙度也將大大地影響被形成之重度摻雜區域的空間解析度，這是由於摻質原子將於形成製程期間通過的這些區域之表面積相對於未紋理化表面增加的緣故。而且，如上所述，慣用的檢驗技術典型地無法光學地決定重度摻雜區域於基板表面上的位置。因此，對於容許低電阻金屬接觸結構形成之強化太陽能電池形成製程也有需求。於重度摻雜區域上可靠地安置指狀物及匯電條，以確認於重度摻雜區域241與指狀物及匯電條之間創造完全歐姆接觸，也是理想的。進一步，創造太陽能電池形成製程，其容許指狀物及匯電條形成於具有尚未紋理化之前表面的區域上，亦為理想的。Embodiments of the present invention also generally provide an innovative solar cell forming process that includes a strengthened front side metallization process to create higher performance solar cell components. Conventional front side metallization processes include the formation of metal contact structures (eg, fingers and bus bars) on heavily doped regions that are disposed within the textured front surface of the solar cell substrate. A typical texturing process provides a surface having a roughness of from about 1 micrometer (μm) to about 10 μm. The deposition of the metal-containing material used to form the fingers and the bus bar on the textured surface can greatly affect the resistance of the formed fingers and the bus bar due to the surface area to be covered by the deposited metal relative to The reason for the untextured surface is increased. Likewise, the roughness of the textured surface will also greatly affect the spatial resolution of the heavily doped regions being formed, as the surface area of the regions through which the dopant atoms will pass during the formation process is increased relative to the untextured surface. reason. Moreover, as noted above, conventional inspection techniques typically do not optically determine the location of heavily doped regions on the surface of the substrate. Therefore, there is also a need for a process for forming a strengthened solar cell that allows formation of a low-resistance metal contact structure. It is also desirable to reliably position the fingers and the bus bars on the heavily doped regions to confirm that a completely ohmic contact is created between the heavily doped regions 241 and the fingers and the bus bars. Further, it is also desirable to create a solar cell forming process that allows fingers and bus bars to be formed on areas having surfaces that have not been textured.

一般太陽能電池形成製程步驟General solar cell forming process steps

第5A至5G圖繪示在用來形成太陽能電池300元件的製程序列的不同階段期間之太陽能電池基板250的概要剖面視圖，其中太陽能電池300元件具有形成於表面251上的金屬接觸結構。第6A圖繪示用來在太陽能電池300上形成(複數)活性區域及/或金屬接觸結構的製程序列600A。第6A圖中所現之序列對應於本文所描述，於第5A至5G圖中所描繪的階段。5A through 5G are schematic cross-sectional views of a solar cell substrate 250 during various stages of a process for forming components of a solar cell 300, wherein the solar cell 300 component has a metal contact structure formed on the surface 251. FIG. 6A illustrates a process sequence 600A for forming (plural) active regions and/or metal contact structures on the solar cell 300. The sequence presented in Figure 6A corresponds to the stages depicted in Figures 5A through 5G as described herein.

於方塊602，且如第5A及6A圖所示，基板250的表面被清潔，以移除任何非期望之材料或粗糙度。於一具體實施例中，清潔製程可使用批次清潔製程進行，其中基板暴露於清潔溶液。基板可使用溼式清潔製程來清潔，其中基板於清潔溶液中被噴灑、淹沒或浸沒。清潔溶液可為慣用的SC1清潔溶液、SC2清潔溶液、HF最終型態(HF-last type)清潔溶液、臭氧化水清潔溶液、氟氫酸(HF)以及過氧化氫(H2 O2 )溶液，或其它適合且具成本效益的清潔溶液。清潔製程可於基板上進行約5秒至約600秒，如約120秒。另一具體實施例，溼式清潔製程可包含兩個步驟製程，其中切割損傷(saw damage)移除步驟首先於基板上進行，且接著進行第二預清潔步驟。於一具體實施例中，切割損傷移除步驟包含將基板暴露於包括氫氧化鉀(KOH)的水性溶液，其維持於約70℃並持續一段期望時間。At block 602, and as shown in Figures 5A and 6A, the surface of the substrate 250 is cleaned to remove any undesired material or roughness. In one embodiment, the cleaning process can be performed using a batch cleaning process in which the substrate is exposed to a cleaning solution. The substrate can be cleaned using a wet cleaning process in which the substrate is sprayed, submerged or submerged in a cleaning solution. The cleaning solution may be a conventional SC1 cleaning solution, an SC2 cleaning solution, an HF final type cleaning solution, an ozonized water cleaning solution, a hydrofluoric acid (HF), and a hydrogen peroxide (H 2 O 2 ) solution. , or other suitable and cost effective cleaning solution. The cleaning process can be carried out on the substrate for from about 5 seconds to about 600 seconds, such as about 120 seconds. In another embodiment, the wet cleaning process can include a two-step process in which a saw damage removal step is first performed on the substrate, and then a second pre-cleaning step is performed. In one embodiment, the cutting damage removal step comprises exposing the substrate to an aqueous solution comprising potassium hydroxide (KOH) maintained at about 70 ° C for a desired period of time.

於方塊604，如第5B及6A圖所示，第一摻質材料329被沉積至形成於基板250的表面251上的一或一個以上分離區域318上。於一具體實施例中，藉由網板印刷、噴墨印刷、橡膠印花(rubber stamping)或其他相似製程的使用，將第一摻質材料329沉積或印刷為期望的圖案230(第2A圖)。於一具體實施例中，使用與第3A至3D及4A至4B圖一同討論之網板印刷製程來沉積第一摻質材料329。於一具體實施例中，網板印刷製程可由自美國加州聖克拉拉之應用材料公司的Baccini S.p.A部門所獲得之SoftlineTM 工具進行。第一摻質材料329可起始地為液體、糊狀物或膠狀物，其被使用以於後續製程步驟中於基板250中形成重度摻雜區域241。通常，第一摻質材料329經過配方，使其在後續紋理化步驟(方塊606)期間可作為遮罩。於一具體實施例中，第一摻質材料329經過配方，以含有有機及/或類玻璃材料，其不會被紋理化製程化學物質攻擊，且其可在一或一個以上後續製程步驟期間成為結構上可靠的遮蔽材料。於某些例子中，在設置第一摻質材料329於表面251上後，基板被加熱至期望的溫度，以造成第一摻質材料329硬化、增密及/或與表面251形成鍵結。於一具體實施例中，第一摻質材料329為膠狀物或糊狀物，其含有n-型摻質，其設置覆蓋於p-型摻雜基板250上。典型使用於矽太陽能電池製造中的n-型摻質為，例如，磷(P)、砷(As)或銻(Sb)等元素。於一實例中，第一摻質材料329包括膠狀物或糊狀物，其具有處於其中的磷酸鈣或磷酸鋇。於一具體實施例中，第一摻質材料329為含磷摻質糊狀物，其被沉積於表面251上，並接著被加熱至介於約80及約500℃之間的溫度。於一具體實施例中，第一摻質材料329可能含有選自由磷矽玻璃(phosphosilicate glass)前驅物、磷酸(H3 PO4 )、亞磷酸(H3 PO3 )、次磷酸(H3 PO2 )及/或其多種銨鹽所組成之群組中的材料。於一具體實施例中，第一摻質材料329為磷矽酸鹽膠狀物或糊狀物，其含有介於約2至約30原子%的磷對矽。於另一具體實施例中，第一摻質材料329包括含摻質玻璃料(glass frit)，如含磷玻璃材料，及黏合劑(binder)材料，其被配置來抵抗來自紋理蝕刻化學物質的化學攻擊。於另一具體實施例中，第一摻質材料329可包括有機黏合劑材料，其具有處於其中的磷摻雜非晶矽顆粒。於某些例子中，第一摻質材料329含有疏水性黏合劑材料，其被選擇以抵抗來自溼式紋理蝕刻化學物質的攻擊。儘管以上討論提供了n-型摻質與p-型基板一起使用的實例，但既然p-型摻質(例如，硼(B)、鋁(Al)、鎵(Ga))與n-型基板也可被考慮，因此前述的配置並非意欲限制本文所討論的本發明之範疇。At block 604, as shown in FIGS. 5B and 6A, the first dopant material 329 is deposited onto one or more separation regions 318 formed on the surface 251 of the substrate 250. In one embodiment, the first dopant material 329 is deposited or printed into a desired pattern 230 by screen printing, ink jet printing, rubber stamping, or other similar process (FIG. 2A). . In one embodiment, the first dopant material 329 is deposited using a screen printing process discussed in conjunction with Figures 3A through 3D and 4A through 4B. In one embodiment, the screen printing process can be performed by a Softline (TM) tool available from the Baccini SpA division of Applied Materials, Inc. of Santa Clara, California. The first dopant material 329 can be initially a liquid, paste or gel that is used to form heavily doped regions 241 in the substrate 250 in subsequent processing steps. Typically, the first dopant material 329 is formulated to act as a mask during the subsequent texturing step (block 606). In one embodiment, the first dopant material 329 is formulated to contain organic and/or glass-like materials that are not attacked by the texturing process chemistry and that may become during one or more subsequent processing steps A structurally reliable masking material. In some examples, after the first dopant material 329 is disposed on the surface 251, the substrate is heated to a desired temperature to cause the first dopant material 329 to harden, densify, and/or form a bond with the surface 251. In one embodiment, the first dopant material 329 is a jelly or paste containing n-type dopants disposed over the p-type doped substrate 250. The n-type dopant typically used in the manufacture of tantalum solar cells is, for example, an element such as phosphorus (P), arsenic (As) or antimony (Sb). In one example, the first dopant material 329 includes a jelly or paste having calcium phosphate or strontium phosphate therein. In one embodiment, the first dopant material 329 is a phosphorus-containing dopant paste that is deposited on surface 251 and then heated to a temperature between about 80 and about 500 °C. In one embodiment, the first dopant material 329 may contain a precursor selected from the group consisting of phosphosilicate glass precursors, phosphoric acid (H 3 PO 4 ), phosphorous acid (H 3 PO 3 ), hypophosphorous acid (H 3 PO). 2 ) and / or a material of a group consisting of a plurality of ammonium salts thereof. In one embodiment, the first dopant material 329 is a phosphonium citrate gel or paste containing from about 2 to about 30 atomic percent phosphorus to ruthenium. In another embodiment, the first dopant material 329 includes a glass frit, such as a phosphorus-containing glass material, and a binder material configured to resist resistance from a etch chemistry. Chemical attack. In another embodiment, the first dopant material 329 can include an organic binder material having phosphorus-doped amorphous germanium particles therein. In some examples, the first dopant material 329 contains a hydrophobic binder material that is selected to resist attack from wet texturing etch chemistries. Although the above discussion provides examples of n-type dopants used with p-type substrates, since p-type dopants (eg, boron (B), aluminum (Al), gallium (Ga)) and n-type substrates It is also contemplated that the foregoing configurations are not intended to limit the scope of the invention as discussed herein.

於方塊606，如第5C及6A圖所示，紋理化製程於基板250的表面251上進行，以形成紋理化表面351。於一具體實施例中，表面251為太陽能電池基板的前側，其適於在太陽能電池形成後接受陽光。於一實例中，基板於蝕刻溶液中進行蝕刻，蝕刻溶液包括按體積約2.7%的氫氧化鉀(KOH)，及約4500 ppm的300 MW PEG，其維持於約79-80℃的溫度，持續約30分鐘。示範性紋理化製程之一實例進一步描述於2009年3月23號所提申之美國專利申請序號第12/383,350號(代理人文件編號第APPM/13323號)，其以全文引用方式納入本文中。At block 606, as shown in FIGS. 5C and 6A, the texturing process is performed on surface 251 of substrate 250 to form textured surface 351. In one embodiment, surface 251 is the front side of the solar cell substrate that is adapted to receive sunlight after formation of the solar cell. In one example, the substrate is etched in an etching solution comprising about 2.7% potassium hydroxide (KOH) by volume and about 4500 ppm of 300 MW PEG maintained at a temperature of about 79-80 ° C. About 30 minutes. An example of an exemplary texturing process is further described in U.S. Patent Application Serial No. 12/383,350, filed on March 23, 2009, which is incorporated herein by reference. .

於方塊608，如第5D及6A圖所示，基板被加熱至大於約800℃之溫度，以造成第一摻質材料329中的摻雜元素擴散進入表面251，以形成重度摻雜區域241。因此，既然第一摻質材料329經過配方而成為針對紋理化學物質的遮罩，重度摻雜區域241通常將包括相對平坦區域341，其未被紋理化且容易藉由光學檢驗技術或甚至由肉眼識別。於一具體實施例中，理想的是容許部分第一摻質材料329於加熱處理期間蒸發，以容許蒸氣輕微摻雜基板表面251的其它暴露區域328，以協助形成太陽能電池元件的接合點部份。於一具體實施例中，基板在氮氣(N2 )、氧氣(O2 )、氫氣(H2 )、空氣或其組合物存在的情況下，被加熱至介於約800℃及約1300℃之間的溫度，持續約1至約120分鐘。於一實例中，基板於快速熱退火(rapid thermal annealing,RTA)腔室中之富含氮氣(N2 )的環境中被加熱至約1000℃，持續約5分鐘。在進行方塊608中的製程後，重度摻雜區域241通常將具有外型及圖案，其匹配於方塊604進行的製程期間設置於表面251上之第一摻質材料329的外型及圖案。於一實例中，如概略地顯示於第2A圖，所形成的重度摻雜區域241之圖案被配置來匹配圖案化金屬接觸結構242，如指狀物260及匯電條261所含的元素。表面251將因而含有未紋理化之平坦區域341以及紋理化區域(例如， 紋理化表面351)，如第5D圖所示。At block 608, as shown in Figures 5D and 6A, the substrate is heated to a temperature greater than about 800 °C to cause dopant elements in the first dopant material 329 to diffuse into the surface 251 to form heavily doped regions 241. Thus, since the first dopant material 329 is formulated to become a mask for the texture chemistry, the heavily doped region 241 will typically include a relatively flat region 341 that is untextured and readily optically inspected or even visually Identification. In one embodiment, it is desirable to allow a portion of the first dopant material 329 to evaporate during the heat treatment to allow the vapor to lightly dope other exposed regions 328 of the substrate surface 251 to assist in forming the junction portion of the solar cell component. . In one embodiment, the substrate is heated to between about 800 ° C and about 1300 ° C in the presence of nitrogen (N 2 ), oxygen (O 2 ), hydrogen (H 2 ), air, or a combination thereof. The temperature between them lasts from about 1 to about 120 minutes. In one example, the substrate is heated to about 1000 ° C in a nitrogen-rich (N 2 )-rich environment in a rapid thermal annealing (RTA) chamber for about 5 minutes. After performing the process in block 608, the heavily doped regions 241 will generally have an outer shape and pattern that matches the shape and pattern of the first dopant material 329 disposed on the surface 251 during the process performed by block 604. In one example, as schematically shown in FIG. 2A, the pattern of heavily doped regions 241 formed is configured to match patterned metal contact structures 242, such as elements contained in fingers 260 and bus bars 261. Surface 251 will thus contain untextured flat regions 341 and textured regions ( e.g., textured surface 351) as shown in Figure 5D.

於一具體實施例中，在完成方塊608中進行的製程以移除任何非所欲的殘留物及/或形成鈍化表面後，可選擇的清潔製程於基板250上進行。於一具體實施例中，清潔製程可藉由以清潔溶液弄溼基板的表面而進行。於一具體實施例中，清潔製程可藉由以清潔溶液弄溼基板而進行，所述清潔溶液如SC1清潔溶液、SC2清潔溶液、HF最終型態清潔溶液、臭氧化水清潔溶液、氟氫酸(HF)以及過氧化氫(H2 O2 )溶液，或其它適合且具成本效益的清潔溶液。清潔製程可於基板上進行約5秒至約600秒，如約30秒至約240秒，例如約120秒。In one embodiment, after the process in block 608 is completed to remove any unwanted residues and/or form a passivated surface, an optional cleaning process is performed on the substrate 250. In one embodiment, the cleaning process can be performed by wetting the surface of the substrate with a cleaning solution. In a specific embodiment, the cleaning process can be performed by wetting the substrate with a cleaning solution such as SC1 cleaning solution, SC2 cleaning solution, HF final type cleaning solution, ozonized water cleaning solution, hydrofluoric acid (HF) and hydrogen peroxide (H 2 O 2 ) solutions, or other suitable and cost effective cleaning solutions. The cleaning process can be carried out on the substrate for from about 5 seconds to about 600 seconds, such as from about 30 seconds to about 240 seconds, such as about 120 seconds.

於方塊610，如第5E及6A圖所示，抗反射層354形成於表面251上。於一具體實施例中，抗反射層354包括薄鈍化/抗反射層(例如， 氧化矽、氮化矽層)。於另一具體實施例中，抗反射層354包括薄鈍化/抗反射層(例如， 氧化矽、氮化矽層)以及透明導電氧化物(transparent conductive oxide,TCO)層。於一具體實施例中，鈍化/抗反射層可包括薄(20-100)本質非晶矽(i-a-Si:H)層，接著是ARC層(例如， 氮化矽)，其可藉物理氣相沉積製程(PVD)或化學氣相沉積製程的使用而被沉積。At block 610, as shown in Figures 5E and 6A, an anti-reflective layer 354 is formed on surface 251. In one embodiment, the anti-reflective layer 354 includes a thin passivation/anti-reflective layer (eg , hafnium oxide , tantalum nitride layer). In another embodiment, the anti-reflective layer 354 includes a thin passivation/anti-reflective layer ( eg, hafnium oxide, tantalum nitride layer) and a transparent conductive oxide (TCO) layer. In a specific embodiment, the passivation/anti-reflection layer may comprise a thin (20-100 An intrinsic amorphous iridium (ia-Si:H) layer followed by an ARC layer (eg , tantalum nitride) that can be deposited by the use of a physical vapor deposition process (PVD) or chemical vapor deposition process.

於方塊612中，如第5F及6A圖所示，抗反射層354的部份視情況被蝕刻，以暴露重度摻雜區域241的多個區域361，使得後續沉積的(複數)金屬層可被置放以密切接觸重度摻雜區域241。於一實例中，被蝕刻的圖案匹配被使用以形成重度摻雜區域241的圖案，如第2A圖所示。典型可被使用來圖案化抗反射層354的蝕刻製程可包含，但不限於，圖案化及乾式蝕刻技術、雷射剝蝕技術、圖案化及溼式蝕刻技術，或其它類似製程。於一具體實施例中，使用於本文所討論並顯示於第3A至3B及7圖的網板印刷製程及系統，將蝕刻膠狀物設置於表面251上。於一具體實施例中，網板印刷製程可由自美國加州聖克拉拉之應用材料公司的Baccini S.p.A部門所獲得之SoftlineTM 工具進行。可被使用來形成一或一個以上圖案化層的蝕刻膠狀物型態乾式蝕刻製程的實例進一步於2008年11月19日所提申之共同讓渡且同在申請中之美國專利申請案序號第12/274,023號[代理人文件編號第APPM 12974.02號]中討論，該案以全文引用方式納入本文中。In block 612, as shown in Figures 5F and 6A, portions of the anti-reflective layer 354 are optionally etched to expose portions 361 of heavily doped regions 241 such that subsequently deposited (plural) metal layers can be The placement is in close contact with the heavily doped region 241. In one example, the etched pattern matching is used to form a pattern of heavily doped regions 241, as shown in FIG. 2A. Etching processes that may typically be used to pattern the anti-reflective layer 354 may include, but are not limited to, patterning and dry etching techniques, laser ablation techniques, patterning and wet etching techniques, or other similar processes. In one embodiment, the etchant is applied to surface 251 for use in the screen printing process and system discussed herein and shown in Figures 3A through 3B and 7. In one embodiment, the screen printing process can be performed by a Softline (TM) tool available from the Baccini SpA division of Applied Materials, Inc. of Santa Clara, California. An example of an etch-glued type dry etch process that can be used to form one or more patterned layers. Further, the co-transfer and the US patent application serial number filed on November 19, 2008 As discussed in No. 12/274,023 [Attorney Docket No. APPM 12974.02], the case is hereby incorporated by reference in its entirety.

於方塊614，如第5G及6A圖所示，導電層370以圖案方式被沉積於基板250的表面251上的重度摻雜區域241上。於一具體實施例中，所形成的導電層370之厚度約500至約50,000埃()，寬度約10 μm至約200 μm，並含有金屬，如鋁(Al)、銀(Ag)、錫(Sn)、鈷(Co)、錸(Rh)、鎳(Ni)、鋅(Zn)、鉛(Pb)、鈀(Pd)、鉬(Mo)、鈦(Ti)、鉭(Ta)、釩(V)、鎢(W)、鉻(Cr)。於一實例中，導電層370為金屬糊狀物，其含有銀(Ag)或錫(Sn)。At block 614, as shown in FIGS. 5G and 6A, conductive layer 370 is deposited in a pattern on heavily doped region 241 on surface 251 of substrate 250. In one embodiment, the conductive layer 370 is formed to a thickness of from about 500 to about 50,000 angstroms ( ), having a width of about 10 μm to about 200 μm, and containing metals such as aluminum (Al), silver (Ag), tin (Sn), cobalt (Co), rhodium (Rh), nickel (Ni), zinc (Zn) Lead (Pb), palladium (Pd), molybdenum (Mo), titanium (Ti), tantalum (Ta), vanadium (V), tungsten (W), chromium (Cr). In one example, conductive layer 370 is a metal paste containing silver (Ag) or tin (Sn).

於方塊614期間進行的製程之一具體實施例中，如第7圖所繪示，使用系統100及可見於製程序列700中的製程步驟將導電層370網板印刷於基板250的表面251上。製程序列700開始於步驟702，其中印刷巢131，其處於位置「1」中，自引入輸送帶111接受基板250，並於平臺138上「夾持」基板。In one embodiment of the process performed during block 614, as shown in FIG. 7, the conductive layer 370 is screen printed on the surface 251 of the substrate 250 using the system 100 and the process steps found in the process train 700. The program sequence 700 begins in step 702 in which the nest 131 is printed in position "1", the substrate 250 is received from the introduction conveyor 111, and the substrate is "clamped" on the platform 138.

接下來，於步驟704，藉著輻射源402及/或403中之一所發射並由攝影機401A所接收的電磁輻射之使用，類似於第4B圖中所示配置之系統控制器101以及光學檢驗系統400被使用來偵測重度摻雜區域241的圖案。Next, at step 704, the use of electromagnetic radiation emitted by one of the radiation sources 402 and/or 403 and received by the camera 401A, similar to the system controller 101 of the configuration shown in FIG. 4B and optical inspection System 400 is used to detect the pattern of heavily doped regions 241.

接下來，於步驟706，轉動制動器組裝130將印刷巢131轉動至網板印刷腔室102(例如， 路徑D1 )。於步驟706中，系統控制器101以及制動器102A接著使用於步驟704期間接收的資料，將網板印刷遮罩(其具有期望的網板印刷圖案形成於其中)定向並對準至形成於基板250上的重度摻雜區域241。一旦網板印刷遮罩被對準，藉由透過形成於網板印刷遮罩102B中的特徵傳遞導電層糊狀物或膠狀物，以將導電層370設置於重度摻雜區域241上。隨後，經處理的基板250接著被傳遞至引出輸送帶112(例如，路徑D2 )，使得其可被傳遞至其它後續處理腔室。Next, at step 706, the rotation of the brake assembly 130 rotates the printing nests 131 to the screen printing chamber 102 (e.g., path D 1). In step 706, system controller 101 and brake 102A then use the material received during step 704 to orient and align the screen printing mask having the desired screen printing pattern formed therein to be formed on substrate 250. The heavily doped region 241 on. Once the screen printing mask is aligned, the conductive layer 370 is placed over the heavily doped region 241 by transferring a conductive layer paste or gel through features formed in the screen printing mask 102B. The processed substrate 250 is then transferred to the take-up conveyor belt 112 (eg, path D 2 ) so that it can be transferred to other subsequent processing chambers.

於方塊614所含有的步驟704之替代具體實施例中，由於創造於紋理化表面351以及平坦區域341之間的對比的緣故，光學檢驗組裝200以及系統控制器101被配置來決定形成於基板表面251上之重度摻雜區域241的位置及定向，所述紋理化表面351以及平坦區域341形成於方塊602至612所含的製程步驟期間。在這樣的配置中，光學檢驗組裝200包含攝影機或其它類似裝置，因為表面粗糙度變異的緣故，其能使用環境光或來自慣用的燈泡或燈管的光偵測所形成的圖案。於一具體實施例中，光學檢驗組裝200的觀察區塊被安置，使其可觀察並解析平坦區域341對比發現於表面251上之紋理化表面351的區域(第8A圖)。接下來，跟著上面所討論的步驟，使用自光學檢驗組裝200接收的資訊，系統控制器101接著控制導電層370沉積於平坦區域341上，接著是重度摻雜區域241。In an alternative embodiment of step 704 included in block 614, optical inspection assembly 200 and system controller 101 are configured to determine formation on the substrate surface due to the contrast created between textured surface 351 and flat region 341. The position and orientation of the heavily doped regions 241 on 251 are formed during the processing steps contained in blocks 602 through 612. In such a configuration, the optical inspection assembly 200 includes a camera or other similar device that is capable of detecting the resulting pattern using ambient light or light from a conventional bulb or tube due to variations in surface roughness. In one embodiment, the viewing block of the optical inspection assembly 200 is positioned such that it can observe and resolve the area of the flattened region 341 compared to the textured surface 351 found on the surface 251 (Fig. 8A). Next, following the steps discussed above, using the information received from the optical inspection assembly 200, the system controller 101 then controls the conductive layer 370 to deposit on the flat region 341, followed by the heavily doped region 241.

請參見第6A圖，於方塊616，熱被傳遞至導電層370，以造成導電層370中的金屬形成電氣連接至重度摻雜區域241。加熱製程可於鄰近系統100的網板印刷部件的加熱爐中進行。可被使用來進行方塊616中的製程步驟之爐的實例進一步於2008年10月24日所提申之共同讓渡且同在申請中之美國專利申請案序號第12/274,023號[代理人文件編號第APPM 14118號]中討論，該案以全文引用方式納入本文中。Referring to FIG. 6A, at block 616, heat is transferred to conductive layer 370 to cause metal in conductive layer 370 to form an electrical connection to heavily doped region 241. The heating process can be performed in a furnace adjacent to the screen printing components of system 100. An example of a furnace that can be used to perform the process steps in block 616 is further disclosed in co-pending on October 24, 2008, and in the application, U.S. Patent Application Serial No. 12/274,023 [Attorney File As discussed in No. APPM 14118, the case is hereby incorporated by reference in its entirety.

可供替代的基板製程序列Alternative substrate system

第6B圖繪示製程序列600A的替代具體實施例，或製程序列600B，其使用兩個分離的摻雜步驟以形成太陽能電池300元件，其具有形成於基板250的表面251上之金屬接觸結構。如以下所討論，除了加入新增的製程步驟，或方塊603，且修改於方塊604及608執行的原始製程步驟(例如，方塊604A及608A)以外，上述聯合第6A圖的製程步驟通常與新的製程序列600B中的步驟相同。FIG. 6B depicts an alternate embodiment of process sequence 600A, or process sequence 600B, which uses two separate doping steps to form solar cell 300 components having metal contact structures formed on surface 251 of substrate 250. As discussed below, in addition to adding a new process step, or block 603, and modifying the original process steps performed at blocks 604 and 608 (e.g., blocks 604A and 608A), the process steps of the above-described joint Figure 6A are generally new. The steps in the program column 600B are the same.

於方塊603，在視情況進行方塊602中的步驟後，使用慣用的摻雜技術，如擴散爐(diffusion furnace)形式摻雜技術，摻雜基板表面251。於一實例中，於基板表面251處的基板250內形成的摻雜層為重度摻雜區域，其具有類似前述之重度摻雜區域的性質。於一具體實施例中，慣用的摻雜技術包含摻質活化步驟，其中基板被加熱至於約800℃之溫度，以造成摻雜元素擴散進入表面251，以形成重度摻雜區域。At block 603, after performing the steps in block 602 as appropriate, the substrate surface 251 is doped using conventional doping techniques, such as diffusion furnace form doping techniques. In one example, the doped layer formed within the substrate 250 at the substrate surface 251 is a heavily doped region that has properties similar to the previously described heavily doped regions. In one embodiment, a conventional doping technique includes a dopant activation step in which the substrate is heated to a temperature of about 800 ° C to cause dopant elements to diffuse into the surface 251 to form heavily doped regions.

於一具體實施例中，於方塊603中的製程進行完成後，可供選擇的清潔製程於基板250上進行，以移除任何非期望殘留物及/或形成鈍化表面。於一具體實施例中，可供選擇的清潔製程類似前述聯合第6A圖的製程。In one embodiment, after the process in block 603 is completed, an optional cleaning process is performed on the substrate 250 to remove any undesired residues and/or form a passivated surface. In one embodiment, the alternative cleaning process is similar to the process described above in connection with Figure 6A.

於方塊604A，在視情況執行方塊603中的步驟後，遮蔽材料被沉積至形成於基板250的表面251上之一或一個以上分離區域上。於一具體實施例中，藉由網板印刷、噴墨印刷、橡膠印花或其它類似製程，如網板印刷製程的使用，將遮蔽材料沉積或印刷為期望的圖案230(第2A圖)。遮蔽材料類似前面所討論的第一摻雜材料329，但其通常不包括含摻質材料的添加。一開始，遮蔽材料可為液體、糊狀物或膠狀物。通常，遮蔽材料經過配方使其於後續紋理化步驟(方塊606)期間可作為遮罩。於一具體實施例中，遮蔽材料經過配方以含有有機及/或類玻璃材料，其不會被紋理化製程化學物質攻擊，且其可在一或一個以上後續製程步驟期間成為結構上可靠的遮蔽材料。於某些例子中，在設置遮蔽材料於表面251上後，基板被加熱至期望的溫度，以造成遮蔽材料硬化、增密及/或與表面251形成鍵結。於一具體實施例中，遮蔽材料為蝕刻阻抗材料，如絲網可印刷之含二氧化矽(SiO2 )材料。At block 604A, after performing the steps in block 603 as appropriate, the masking material is deposited onto one or more separate regions formed on surface 251 of substrate 250. In one embodiment, the masking material is deposited or printed into a desired pattern 230 (FIG. 2A) by screen printing, ink jet printing, rubber printing, or the like, such as the use of a screen printing process. The masking material is similar to the first dopant material 329 discussed above, but typically does not include the addition of dopant-containing material. Initially, the masking material can be a liquid, a paste or a gel. Typically, the masking material is formulated to act as a mask during the subsequent texturing step (block 606). In one embodiment, the masking material is formulated to contain organic and/or glass-like materials that are not attacked by the texturing process chemistry and that can be structurally reliably masked during one or more subsequent processing steps material. In some examples, after the masking material is disposed on surface 251, the substrate is heated to a desired temperature to cause the masking material to harden, densify, and/or form a bond with surface 251. In one embodiment, the masking material is an etch resist material such as a screen printable cerium oxide (SiO 2 ) material.

於方塊606，如第6B圖所示，紋理化製程於基板250的表面251上進行，以於其上形成紋理化表面，類似第5C圖所繪示之紋理化表面351。於一具體實施例中，表面251上未被於方塊604A所沉積的遮蔽材料覆蓋之區域會被蝕刻去除。於方塊606所進行的製程之一具體實施例中，紋理化製程被進行，直到於方塊603期間形成的重度摻雜區域的至少大部分都被移除為止。於一具體實施例中，基板以類似上述製程，其聯合於方塊606期間所進行的製程，於蝕刻溶液中被蝕刻。At block 606, as shown in FIG. 6B, the texturing process is performed on the surface 251 of the substrate 250 to form a textured surface thereon, similar to the textured surface 351 depicted in FIG. 5C. In one embodiment, the area of surface 251 that is not covered by the masking material deposited by block 604A is etched away. In one embodiment of the process performed at block 606, the texturing process is performed until at least a majority of the heavily doped regions formed during block 603 are removed. In one embodiment, the substrate is etched in the etching solution in a manner similar to that described above, which is coupled to the process performed during block 606.

於一具體實施例中，遮蔽材料經過配方，使其於紋理化製程期間被蝕刻。因此，於方塊604A及606所進行的製程之一具體實施例中，期望厚度的遮蔽材料被沉積至基板之表面上，使得設置在遮蔽材料下方的大部分基板材料可維持不受攻擊，直到紋理化製程完成，或至少接近完成。如上所討論，因表面粗糙度對比之故，此配置將容許光學檢驗系統，於後續步驟中更容易辨識重度沉積(例如，於方塊603所形成)與基板的其它區域。In one embodiment, the masking material is formulated to be etched during the texturing process. Thus, in one embodiment of the process performed by blocks 604A and 606, a desired thickness of masking material is deposited onto the surface of the substrate such that most of the substrate material disposed beneath the masking material remains unaffected until texture The process is completed, or at least close to completion. As discussed above, this configuration will allow for an optical inspection system due to surface roughness contrast, which is more readily identifiable in subsequent steps (e.g., as formed by block 603) and other regions of the substrate.

於方塊608A，在進行方塊606中的步驟之後，使用慣用的摻雜技術，如擴散爐形式摻雜技術，摻雜基板表面251。於一實例中，於基板表面251處之基板250內形成的摻雜層為輕度摻雜區域，其具有大於約每平方面積50歐姆(Ω/□)之薄片電阻。於一具體實施例中，慣用的摻雜技術包含摻質活化步驟，其中基板被加熱至大於約800℃之溫度，以造成摻雜元素擴散進入表面251，以形成重度摻雜區域。於一具體實施例中，於方塊603及608A進行的製程期間所提供的摻質原子，為相同類型的摻質原子，舉例而言，磷質、砷或硼。於另一具體實施例中，於方塊603及608A進行的製程期間所提供的摻質原子，為不同的摻質原子。At block 608A, after performing the steps in block 606, the substrate surface 251 is doped using conventional doping techniques, such as diffusion furnace form doping techniques. In one example, the doped layer formed within substrate 250 at substrate surface 251 is a lightly doped region having a sheet resistance greater than about 50 ohms per square inch ([Omega]/□). In one embodiment, a conventional doping technique includes a dopant activation step in which the substrate is heated to a temperature greater than about 800 ° C to cause dopant elements to diffuse into the surface 251 to form heavily doped regions. In one embodiment, the dopant atoms provided during the processes performed at blocks 603 and 608A are the same type of dopant atoms, for example, phosphorous, arsenic or boron. In another embodiment, the dopant atoms provided during the processes performed at blocks 603 and 608A are different dopant atoms.

在進行方塊608A的製程之後，藉由加熱、洗滌或漂洗製程步驟的使用來移除遮蔽材料，以形成表面，其類似第5D圖所示之表面251。於一具體實施例中，於方塊608A中的製程進行完成以移除任何非期望殘留物及/或形成鈍化表面後，可供選擇的清潔製程於基板250上進行。於一具體實施例中，藉由以清潔溶液弄溼基板的表面來進行清潔製程。於一具體實施例中，藉由以清潔溶液弄溼基板來進行清潔製程，清潔溶液如SC1清潔溶液、SC2清潔溶液、HF最終型態清潔溶液、臭氧化水清潔溶液、氟氫酸(HF)以及過氧化氫(H2 O2 )溶液，或其它適合且具成本效益的清潔溶液。清潔製程可於基板上進行約5秒至約600秒，如約30秒至約240秒，舉例而言，約120秒。After the process of block 608A is performed, the masking material is removed by the use of a heating, washing or rinsing process step to form a surface similar to surface 251 shown in Figure 5D. In one embodiment, an optional cleaning process is performed on the substrate 250 after the process in block 608A is completed to remove any undesired residues and/or form a passivated surface. In one embodiment, the cleaning process is performed by wetting the surface of the substrate with a cleaning solution. In one embodiment, the cleaning process is performed by wetting the substrate with a cleaning solution such as SC1 cleaning solution, SC2 cleaning solution, HF final type cleaning solution, ozonized water cleaning solution, hydrofluoric acid (HF). And a hydrogen peroxide (H 2 O 2 ) solution, or other suitable and cost effective cleaning solution. The cleaning process can be carried out on the substrate for from about 5 seconds to about 600 seconds, such as from about 30 seconds to about 240 seconds, for example, about 120 seconds.

接下來，如上聯合第6B圖所討論的製程序列600B接續到方塊610至616中所進行的製程步驟，其已如上聯合第6A圖而討論。因此，方塊610至616中所進行的製程步驟於此不再複述。Next, the program sequence 600B discussed above in connection with FIG. 6B continues to the process steps performed in blocks 610 through 616, which have been discussed above in connection with FIG. 6A. Therefore, the process steps performed in blocks 610 through 616 are not repeated here.

第二可供替代的基板製程序列The second alternative substrate system

第6C圖繪示製程序列600A之替代具體實施例，或製程序列600C，其使用兩個分開的摻雜步驟，以形成太陽能電池300元件，其具有形成於基板250的表面251上之金屬接觸結構。如以下所討論，除了加入新增的製程步驟，或方塊605，且修改於方塊608執行的原始製程步驟(例如， 方塊608B)以外，上述聯合第6A圖的製程步驟通常與第6C圖所示的新製程序列600C中所揭示的步驟相同。6C depicts an alternate embodiment of the programming sequence 600A, or a programming sequence 600C that uses two separate doping steps to form a solar cell 300 component having a metal contact structure formed on the surface 251 of the substrate 250. . As discussed below, in addition to adding a new process step, or block 605, and modifying the original process steps performed at block 608 ( e.g., block 608B), the process steps of the above-described joint Figure 6A are generally as shown in Figure 6C. The steps disclosed in the new program column 600C are the same.

於方塊605，在方塊602及方塊604中的步驟進行後，基板被加熱至大於約800℃之溫度，以造成第一摻質材料329中的摻雜元素擴散進入基板250的表面251，以形成重度摻雜區域241。在這樣的配置中，第一摻質材料329的部分，其蒸發並隨後摻雜基板的暴露區域，可於紋理化製程步驟(例如， 方塊606)中被移除，因而容許紋理化表面(例如， 暴露的表面)中的摻雜程度，藉由方塊608B(第6C圖)所進行的後續摻雜步驟之使用而更容易受到控制。於一具體實施例中，在氮氣(N2 )、氧氣(O2 )、氫氣(H2 )、空氣，或其組合物存在下，具有第一摻質材料329設置於其上的基板被加熱至約800℃至約1300℃之溫度，持續約1至約120分鐘。於一實例中，基板於快速熱退火(RTA)腔室中之富含氮氣(N2 )的環境中被加熱至約1000℃，持續約5分鐘。在進行方塊605中的製程後，所形成的重度摻雜區域241通常將具有外型及圖案，其匹配於方塊604進行的製程期間設置於表面251上之第一摻質材料329的外型及圖案。於一具體實施例中，理想的是，第一摻質材料329的一部份保留於表面251上，以作為紋理化蝕刻遮罩。At block 605, after the steps in blocks 602 and 604 are performed, the substrate is heated to a temperature greater than about 800 ° C to cause dopant elements in the first dopant material 329 to diffuse into the surface 251 of the substrate 250 to form The heavily doped region 241. In such a configuration, portions of the first dopant material 329, which vaporize and subsequently doped the exposed regions of the substrate, can be removed in a texturing process step (eg , block 606), thereby allowing for a textured surface (eg, The degree of doping in the exposed surface) is more easily controlled by the use of subsequent doping steps performed by block 608B (Fig. 6C). In one embodiment, the substrate having the first dopant material 329 disposed thereon is heated in the presence of nitrogen (N 2 ), oxygen (O 2 ), hydrogen (H 2 ), air, or a combination thereof To a temperature of from about 800 ° C to about 1300 ° C for from about 1 to about 120 minutes. In one example, the substrate is heated to about 1000 ° C in a nitrogen-rich (N 2 )-rich environment in a rapid thermal annealing (RTA) chamber for about 5 minutes. After performing the process in block 605, the heavily doped regions 241 formed will generally have an outer shape and pattern that matches the shape of the first dopant material 329 disposed on the surface 251 during the process performed by block 604 and pattern. In one embodiment, it is desirable that a portion of the first dopant material 329 remains on the surface 251 to serve as a textured etch mask.

於方塊606，在一具體實施例中，表面251上未被第一摻質材料329覆蓋的經摻雜區域會被蝕刻去除。於一具體實施例中，第一摻質材料329經過配方，使其於方塊606期間進行的紋理化製程期間被蝕刻，其如上所討論。因而，於方塊604及606所進行之製程的一具體實施例中，期望厚度的第一摻質材料329被沉積至基板之表面上，使得設置在第一摻質材料329下方的大部分基板材料可維持不受攻擊，直到紋理化製程完成，或至少接近完成。如上所討論，因表面粗糙度對比之故，此配置將容許光學檢驗系統，於後續步驟中更容易辨識重度沉積(例如，於方塊605所形成)與基板的其它區域。At block 606, in a particular embodiment, the doped regions on surface 251 that are not covered by first dopant material 329 are etched away. In one embodiment, the first dopant material 329 is formulated to be etched during the texturing process performed during block 606, as discussed above. Thus, in one embodiment of the process performed by blocks 604 and 606, a desired thickness of the first dopant material 329 is deposited onto the surface of the substrate such that most of the substrate material disposed beneath the first dopant material 329 Can remain unaffected until the texture process is complete, or at least close to completion. As discussed above, this configuration will allow for an optical inspection system due to surface roughness contrast, which is more readily identifiable in subsequent steps (e.g., as formed by block 605) and other regions of the substrate.

於方塊608B，在進行於前文中聯合第6A圖所述之方塊606中的步驟之後，使用慣用的摻雜技術，如擴散爐形式摻雜技術，摻雜基板表面251。於一實例中，於基板表面251處之基板250內形成的摻雜層為輕度摻雜區域，其具有大於約每平方面積50歐姆(Ω/□)之薄片電阻。於一具體實施例中，慣用的摻雜技術包含摻質活化步驟，其中基板被加熱至大於約800℃之溫度，以造成摻雜元素擴散進入表面251，以形成重度摻雜區域。於一具體實施例中，處於第一摻質材料329中與在方塊608B所進行的製程期間所提供的摻質原子，為相同類型的摻質原子，舉例而言，磷質、砷或硼。於另一具體實施例中，處於第一摻質材料329中與在方塊608B所進行的製程期間所提供的摻質原子，為不同的摻質原子。At block 608B, after performing the steps in block 606 described above in conjunction with FIG. 6A, the substrate surface 251 is doped using conventional doping techniques, such as diffusion furnace form doping techniques. In one example, the doped layer formed within substrate 250 at substrate surface 251 is a lightly doped region having a sheet resistance greater than about 50 ohms per square inch ([Omega]/□). In one embodiment, a conventional doping technique includes a dopant activation step in which the substrate is heated to a temperature greater than about 800 ° C to cause dopant elements to diffuse into the surface 251 to form heavily doped regions. In one embodiment, the dopant atoms provided in the first dopant material 329 and during the process performed at block 608B are the same type of dopant atoms, for example, phosphorous, arsenic or boron. In another embodiment, the dopant atoms provided in the first dopant material 329 and during the process performed at block 608B are different dopant atoms.

在進行方塊608B的製程之後，於一具體實施例中，可供選擇的清潔製程於基板250上進行，以移除任何非期望殘留物及/或形成鈍化表面。於一具體實施例中，藉由以清潔溶液弄溼基板的表面來進行清潔製程。於一具體實施例中，藉由以清潔溶液弄溼基板來進行清潔製程，清潔溶液如SC1清潔溶液、SC2清潔溶液、HF最終型態清潔溶液、臭氧化水清潔溶液、氟氫酸(HF)以及過氧化氫(H2 O2 )溶液，或其它適合且具成本效益的清潔溶液。清潔製程可於基板上進行約5秒至約600秒，如約30秒至約240秒，舉例而言，約120秒。After the process of block 608B is performed, in an embodiment, an optional cleaning process is performed on the substrate 250 to remove any undesired residues and/or form a passivated surface. In one embodiment, the cleaning process is performed by wetting the surface of the substrate with a cleaning solution. In one embodiment, the cleaning process is performed by wetting the substrate with a cleaning solution such as SC1 cleaning solution, SC2 cleaning solution, HF final type cleaning solution, ozonized water cleaning solution, hydrofluoric acid (HF). And a hydrogen peroxide (H 2 O 2 ) solution, or other suitable and cost effective cleaning solution. The cleaning process can be carried out on the substrate for from about 5 seconds to about 600 seconds, such as from about 30 seconds to about 240 seconds, for example, about 120 seconds.

接下來，如上聯合第6C圖所討論的製程序列600C接續到方塊610至616中所進行的製程步驟，其已如上聯合第6A圖而討論。因此，方塊610至616中所進行的製程步驟於此不再複述。Next, the program sequence 600C discussed above in connection with FIG. 6C continues to the process steps performed in blocks 610 through 616, which have been discussed above in connection with FIG. 6A. Therefore, the process steps performed in blocks 610 through 616 are not repeated here.

需注意的是，在不脫離本文所描述的本發明之基本範疇下，可於如上聯合第6A、6B及6C圖所討論的一或一個以上製程步驟間進行額外的製程步驟。於一實例中，在沉積抗反射層354以形成異質接面(heterojunction)類型太陽能電池的一部分之前，於基板表面251上形成一或一個以上本質矽及/或摻雜矽區域可能是理想的。It is noted that additional process steps may be performed between one or more process steps as discussed above in connection with Figures 6A, 6B, and 6C, without departing from the basic scope of the invention as described herein. In one example, it may be desirable to form one or more substantially germanium and/or doped germanium regions on the substrate surface 251 prior to depositing the anti-reflective layer 354 to form a portion of a heterojunction type solar cell.

光學檢驗技術 - Optical inspection technology -

於一具體實施例中，製程序列600A包含在沉積導電層370至圖案化重度摻雜區域241上之前，一或一個以上對準標記801之形成。一或一個以上對準標記801被使用來協助光學檢驗組裝200決定圖案230的對準及定向。第8A圖繪示第2A圖中所示的基板250之一具體實施例，其具有形成於表面251上的複數個對準標記801以及(複數)圖案化重度摻雜區域241。於一具體實施例中，理想的是，在與(複數)重度摻雜區域241的圖案230形成基本上相同的時間點形成已知圖案的對準標記801，以確保標記適當地對準圖案230。在這樣的配置中，光學檢驗組裝200被使用來提供資訊，其關於來自基板250的表面上之理想位置800之重度摻雜區域241的實際位置補償(offset)(ΔX,ΔY)以及角度補償ΔR(第8A圖)。表面251上的(複數)重度摻雜區域241之實際位置補償以及角度補償，可因而更準確地由系統控制器101決定，並被使用以於後續步驟中更準確地調整(複數)重度摻雜區域241上之導電層370的安置。In one embodiment, the fabrication sequence 600A includes the formation of one or more alignment marks 801 prior to depositing the conductive layer 370 onto the patterned heavily doped region 241. One or more alignment marks 801 are used to assist the optical inspection assembly 200 in determining the alignment and orientation of the pattern 230. FIG. 8A illustrates an embodiment of the substrate 250 shown in FIG. 2A having a plurality of alignment marks 801 and (plural) patterned heavily doped regions 241 formed on the surface 251. In a specific embodiment, it is desirable to form alignment marks 801 of known patterns at substantially the same time points as the pattern 230 of the (plural) heavily doped regions 241 to ensure that the marks are properly aligned with the pattern 230. . In such a configuration, the optical inspection assembly 200 is used to provide information regarding the actual position offset (ΔX, ΔY) and angular compensation ΔR of the heavily doped region 241 from the ideal location 800 on the surface of the substrate 250. (Fig. 8A). The actual position compensation and angular compensation of the (plural) heavily doped regions 241 on the surface 251 can thus be more accurately determined by the system controller 101 and used to more accurately adjust (plural) heavy doping in subsequent steps. Placement of conductive layer 370 on region 241.

典型地，基板250的表面251上的圖案230之對準，是依賴圖案230與基板250的特徵之對準。於一實例中，於方塊604期間所產生的圖案230之對準，是根據網板印刷裝置與基板上的特徵，如邊緣250A、250B(第8A圖)之對準。圖案230的安置將具有對應基板250的邊緣250A之預計位置X以及預計角定向R，以及對應基板250的邊緣250B之預計位置Y。自表面251上之預計位置(X,Y)以及預計角定向R的表面251上圖案230之位置誤差，可被描述為位置補償(ΔX,ΔY)以及角度補償ΔR。因而，位置補償(ΔX,ΔY)為對應邊緣250A及250B之(複數)重度摻雜區域241的圖案230之安置誤差，且角度補償ΔR為對應基板250的邊緣250B之(複數)重度摻雜區域241的圖案230之角度對準誤差。基板250的表面251上之網板印刷圖案230的誤置可影響所形成的元件正確執行的能力，並因而影響系統100的元件產量。然而，在網板印刷層沉積於另一被形成圖案的頂部之應用中，例如於(複數)重度摻雜區域241上設置導電層370，最小化位置誤差甚至更為關鍵。Typically, the alignment of the pattern 230 on the surface 251 of the substrate 250 is dependent on the alignment of the pattern 230 with the features of the substrate 250. In one example, the alignment of pattern 230 produced during block 604 is based on alignment of the screen printing device with features on the substrate, such as edges 250A, 250B (Fig. 8A). The placement of the pattern 230 will have a predicted position X of the edge 250A of the corresponding substrate 250 and a predicted angular orientation R, and a predicted position Y of the edge 250B of the corresponding substrate 250. The positional error from the predicted position (X, Y) on the surface 251 and the pattern 230 on the surface 251 of the predicted angular orientation R can be described as position compensation (ΔX, ΔY) and angle compensation ΔR. Thus, the position compensation (ΔX, ΔY) is the placement error of the pattern 230 of the (complex) heavily doped region 241 corresponding to the edges 250A and 250B, and the angle compensation ΔR is the (complex) heavily doped region corresponding to the edge 250B of the substrate 250. The angular alignment error of the pattern 230 of 241. Misplacement of the screen printing pattern 230 on the surface 251 of the substrate 250 can affect the ability of the formed components to perform properly and thus affect the component yield of the system 100. However, in applications where the screen printed layer is deposited on another patterned top, such as the conductive layer 370 disposed on the (plural) heavily doped regions 241, minimizing positional errors is even more critical.

在增進導電層370與(複數)重度摻雜區域241對準的準確度之努力中，本發明之具體實施例利用一或一個以上光學檢驗裝置、系統控制器101以及一或一個以上對準標記，其於(複數)重度摻雜區域241形成期間形成於基板250的表面251上，使得導電層370對(複數)重度摻雜區域241的正確對準可被創造。於一具體實施例中，藉由系統控制器101自一或一個以上光學檢驗裝置所接收的資訊之使用，以及系統控制器101使用網板印刷腔室102中的一或一個以上制動器102A，以控制網板印刷遮罩相對於(複數)重度摻雜區域241的位置及定向的能力，導電層370以自動化方式對準至(複數)重度摻雜區域241。於一具體實施例中，光學檢驗裝置包含一或一個以上檢驗組裝200所含有的組件。於一具體實施例中，一或一個以上對準標記801，或基準標記(fiducial mark)，可被形成於類似第9A至9D圖所繪示的圖案中，其將於下文中描述。對準標記801可被形成於基板250的表面251之未使用區塊上，以避免對準標記801影響所形成的太陽能電池元件之表現。In an effort to improve the accuracy of alignment of conductive layer 370 with (plural) heavily doped regions 241, embodiments of the present invention utilize one or more optical inspection devices, system controller 101, and one or more alignment marks It is formed on the surface 251 of the substrate 250 during formation of the (plural) heavily doped regions 241 such that proper alignment of the (multiple) heavily doped regions 241 of the conductive layer 370 can be created. In one embodiment, the use of information received by system controller 101 from one or more optical inspection devices, and system controller 101 using one or more brakes 102A in screen printing chamber 102, Controlling the ability of the screen to print the position and orientation of the (plural) heavily doped regions 241, the conductive layer 370 is automatically aligned to the (plural) heavily doped regions 241. In one embodiment, the optical inspection device includes one or more components included in the inspection assembly 200. In one embodiment, one or more alignment marks 801, or fiducial marks, may be formed in a pattern similar to that depicted in Figures 9A through 9D, which will be described below. Alignment marks 801 can be formed on unused blocks of surface 251 of substrate 250 to avoid alignment marks 801 affecting the performance of the formed solar cell elements.

於某些太陽能電池製程序列中，如第8B圖所示，基板250的表面之至少一部份塗佈有遮蔽材料805，其阻擋了光學檢驗組裝200偵測圖案230的能力。於一實例中，金屬塗佈層設置於相對表面251的表面252上，因此而影響了光學檢驗組裝200直接決定重度摻雜區域241之圖案230的能力。於一實例中，光學檢驗系統400被阻止透過基板250的所有區域傳遞來自(複數)輻射源402的電磁輻射。因此，於一具體實施例中，理想的是，選擇性地自一或一個以上區域806(例如，邊緣區域)移除部份遮蔽材料805，並於一或一個以上區域806之上或之內安置一或一個以上對準標記801，使得重度摻雜區域241的圖案230仍可藉由對準標記801的位置而被決定或推斷。In some solar cell programming, as shown in FIG. 8B, at least a portion of the surface of the substrate 250 is coated with a masking material 805 that blocks the ability of the optical inspection assembly 200 to detect the pattern 230. In one example, the metal coating layer is disposed on the surface 252 of the opposing surface 251, thus affecting the ability of the optical inspection assembly 200 to directly determine the pattern 230 of the heavily doped regions 241. In one example, optical inspection system 400 is prevented from transmitting electromagnetic radiation from (plural) radiation source 402 through all regions of substrate 250. Thus, in one embodiment, it is desirable to selectively remove a portion of the masking material 805 from one or more regions 806 (eg, edge regions) and above or within one or more regions 806. One or more alignment marks 801 are disposed such that the pattern 230 of the heavily doped regions 241 can still be determined or inferred by the position of the alignment marks 801.

第9A圖繪示對準標記801的多種實例，舉例而言，對準標記801A至801D，其可於形成(複數)重度摻雜區域241的製程期間被形成於基板250的表面251上，並被檢驗組裝200使用以找出(複數)重度摻雜區域241的位置補償(ΔX,ΔY)以及角度補償ΔR。於一具體實施例中，對準標記801可具有圓形外觀(例如， 對準標記801A)、方形外觀(例如，對準標記801B)、十字狀外觀(例如， 對準標記801C)或字母數字式外觀(例如， 對準標記801D)。通常，選擇對準標記801之外觀，其容許系統控制器101中的圖案識別軟體解析對準標記801的實際位置，並因而從檢驗組裝200所觀察的影像解析基板250的表面251上之(複數)重度摻雜區域241的實際位置，是理想的。系統控制器101適於解析位置補償(ΔX,ΔY)以及角度補償ΔR，並調整網板印刷裝置，以在印刷導電層370時，最小化位置錯位以及角度錯位。FIG. 9A illustrates various examples of alignment marks 801, for example, alignment marks 801A through 801D, which may be formed on surface 251 of substrate 250 during the process of forming (plural) heavily doped regions 241, and The inspection assembly 200 is used to find the position compensation (ΔX, ΔY) and the angle compensation ΔR of the (plural) heavily doped region 241. In one embodiment, the alignment mark 801 can have a circular appearance (eg , alignment mark 801A), a square appearance (eg, alignment mark 801B), a cross-shaped appearance ( eg, alignment mark 801C), or alphanumeric Appearance (eg , alignment mark 801D). In general, the appearance of the alignment mark 801 is selected, which allows the pattern recognition software in the system controller 101 to resolve the actual position of the alignment mark 801, and thus from the surface 251 of the image analysis substrate 250 observed by the inspection assembly 200 (plural The actual position of the heavily doped region 241 is desirable. The system controller 101 is adapted to resolve the position compensation (ΔX, ΔY) and the angle compensation ΔR and adjust the screen printing device to minimize positional misalignment and angular misalignment when printing the conductive layer 370.

於一具體實施例中，形成對準標記801的材料與用以形成(複數)重度摻雜區域241的材料相同，因而對準標記801可被使用上述技術的光學檢驗系統400偵測。在這樣的配置中，對準標記801可在形成(複數)重度摻雜區域241的同時被形成。於另一具體實施例中，於重度摻雜區域241形成之前，使用雷射剝蝕、機械刻劃或乾式蝕刻技術，將對準標記801蝕刻或刻劃入基板250的表面251，使得於方塊604(第6A圖)期間，(複數)重度摻雜區域241的圖案230可與所形成的對準標記801對準，且於方塊614期間，導電層370可與對準標記801對準。In one embodiment, the material forming the alignment mark 801 is the same as the material used to form the (plural) heavily doped region 241, and thus the alignment mark 801 can be detected using the optical inspection system 400 of the above technique. In such a configuration, the alignment mark 801 can be formed while forming the (plural) heavily doped region 241. In another embodiment, prior to formation of heavily doped regions 241, alignment marks 801 are etched or scored into surface 251 of substrate 250 using laser ablation, mechanical scribing, or dry etching techniques, such that at block 604 During (FIG. 6A), the pattern 230 of the (plural) heavily doped regions 241 can be aligned with the formed alignment marks 801, and during the block 614, the conductive layer 370 can be aligned with the alignment marks 801.

第9B至9D圖繪示基板250的表面251上之對準標記801的多種配置，其可被使用，以增進由系統控制器101自檢驗組裝200中的組件所接收的影像，所計算的補償量測之準確度。第9B圖繪示一個配置，其中兩個對準標記801安置於基板250的表面251上之接近對角處。藉由盡可能遠離擺設對準標記801，於基板250上的特徵，如邊緣250A或250B，以及圖案230之間的相關位置誤差可更準確地解析。第9C圖繪示另一個配置，其中三個對準標記801被印刷於基板250的表面251上之多個角落附近，以協助解析重度摻雜區域241的圖案230之補償。9B through 9D illustrate various configurations of alignment marks 801 on surface 251 of substrate 250 that can be used to enhance images received by system controller 101 from components in inspection assembly 200, calculated compensation The accuracy of the measurement. FIG. 9B illustrates a configuration in which two alignment marks 801 are disposed on opposite sides of the surface 251 of the substrate 250. By as far as possible from the placement alignment marks 801, features on the substrate 250, such as the edges 250A or 250B, and the associated positional errors between the patterns 230 can be more accurately resolved. FIG. 9C illustrates another configuration in which three alignment marks 801 are printed near a plurality of corners on the surface 251 of the substrate 250 to assist in resolving the compensation of the pattern 230 of the heavily doped regions 241.

第9D圖繪示另一個配置，其中三個對準標記801被印刷於跨越基板250的表面251上之戰略位置。於此具體實施例中，兩個對準標記801安置在與邊緣250A平行的線上，且第三對準標記801安置在與邊緣250A垂直的間隔處。在這樣的配置中，系統控制器101中的圖案識別軟體創造垂直參考線L1 及L2 ，以提供關於(複數)重度摻雜區域241相對於基板250的位置及定向之附加資訊。FIG. 9D illustrates another configuration in which three alignment marks 801 are printed at strategic locations across the surface 251 of the substrate 250. In this particular embodiment, two alignment marks 801 are disposed on a line parallel to the edge 250A, and a third alignment mark 801 is disposed at a space perpendicular to the edge 250A. In such a configuration, the system controller 101 in the pattern recognition software to create a vertical reference line L 1 and L 2, to provide information on (s) 241 heavily doped region of additional information with respect to the position and orientation of the substrate 250.

第10圖為轉動制動器組裝130之一具體實施例的概要等角視圖，其中檢驗組裝200包含複數個光學檢驗裝置，如二或二個以上光學檢驗裝置。於一實例中，檢驗組裝200包含三個攝影機401B、401C及401D，其適於觀察基板250的表面251上，由一或一個以上輻射源，如輻射源403所照射的三個不同區域。於一配置中，攝影機401B、401C及401D分別安置，以觀察基板250的表面251上之區域，其中含有形成的對準標記801。因縮小各個觀察區塊122A、122B及122C之尺寸的能力之故，(複數)重度摻雜區域241的安置之準確度可被增進，並因而增加了每單位面積的解析度或像素的數目，同時仍容許跨越基板250的表面251之對準標記801的位置盡可能擴展，以減少對準誤差的數量。Figure 10 is a schematic isometric view of one embodiment of a rotary brake assembly 130 in which the inspection assembly 200 includes a plurality of optical inspection devices, such as two or more optical inspection devices. In one example, inspection assembly 200 includes three cameras 401B, 401C, and 401D that are adapted to view three different regions of surface 251 of substrate 250 that are illuminated by one or more sources of radiation, such as radiation source 403. In one configuration, cameras 401B, 401C, and 401D are respectively disposed to view an area on surface 251 of substrate 250 containing alignment marks 801 formed therein. Due to the ability to reduce the size of each of the viewing blocks 122A, 122B, and 122C, the accuracy of placement of the (plural) heavily doped regions 241 can be increased, and thus the resolution per unit area or the number of pixels is increased. At the same time, the position of the alignment mark 801 across the surface 251 of the substrate 250 is still allowed to expand as much as possible to reduce the number of alignment errors.

於一具體實施例中，在製程期間，檢驗組裝200以及系統控制器101擷取形成於基板250的表面251上的至少兩個對準標記801之影像。所擷取的影像可被系統控制器101中的影像識別軟體讀取。系統控制器101接著藉由分析至少兩個對準標記801並比較它們的預計位置(X,Y)以及角定向R，決定網板印刷圖案的位置補償(ΔX,ΔY)以及角度補償ΔR。系統控制器101接著使用從前述分析所獲得的資訊，以調整網板印刷腔室102中的網板印刷遮罩之位置，以容許導電層370對準安置覆蓋於(複數)重度摻雜區域241上。In one embodiment, the inspection assembly 200 and the system controller 101 capture images of at least two alignment marks 801 formed on the surface 251 of the substrate 250 during the process. The captured image can be read by the image recognition software in the system controller 101. The system controller 101 then determines the position compensation (ΔX, ΔY) and the angle compensation ΔR of the screen printing pattern by analyzing at least two alignment marks 801 and comparing their predicted positions (X, Y) and angular orientation R. The system controller 101 then uses the information obtained from the foregoing analysis to adjust the position of the screen printing mask in the screen printing chamber 102 to allow the conductive layer 370 to be aligned to cover the (plural) heavily doped regions 241. on.

於另一具體實施例中，光學檢驗組裝200以及系統控制器101擷取設置於基板表面251上的三個對準標記801之影像。於一具體實施例中，系統控制器101確認三個對準標記801相對於理論參考框架(theoretical reference frame)的實際位置。系統控制器101接著決定各該三個對準標記801自理論參考框架之補償，並使用座標轉移演算法(coordinate transfer algorithm)調整印刷腔室102內之網板印刷裝置的位置至針對後續印刷導電層370的理想位置，伴隨著對(複數)重度摻雜區域241而言更顯著準確的對準。於一具體實施例中，普通最小平方(ordinary least squares,OLS)方法或類似方法可被用來最佳化針對印刷導電層370的理想位置。舉例來說，根據最小化對準標記801之實際位置與理論參考框架之間的距離之函數，各個對準標記801自理論參考框架之補償可被決定，且網板印刷裝置的理想位置可被最佳化。於位置擷取程序期間，由系統控制器101所接收的對準標記位置資訊因而被使用來，對應在(複數)重度摻雜區域241形成期間所創造之對準標記801的實際位置，定向並定位導電層370。因此，既然導電層370的安置依賴(複數)重度摻雜區域241的實際位置，而不是(複數)重度摻雜區域241對基板250的特徵之間的關係，以及接著導電層370對基板250的(複數)特徵之間的關係，導電層370的安置誤差可被減少。本發明所屬技術領域中的習知技藝者將理解，(複數)重度摻雜區域241對應基板250的特徵之安置，以及接著導電層370對應基板250的特徵之安置，提供了對應(複數)重度摻雜區域241之導電層370的直接對準之幾乎兩倍誤差。In another embodiment, optical inspection assembly 200 and system controller 101 capture images of three alignment marks 801 disposed on substrate surface 251. In one embodiment, system controller 101 confirms the actual position of three alignment marks 801 relative to a theoretical reference frame. The system controller 101 then determines the compensation of each of the three alignment marks 801 from the theoretical reference frame and adjusts the position of the screen printing device within the print chamber 102 to a subsequent printed conductive using a coordinate transfer algorithm. The ideal location of layer 370 is accompanied by a more significant alignment of the (plural) heavily doped regions 241. In one embodiment, an ordinary least squares (OLS) method or the like can be used to optimize the desired position for the printed conductive layer 370. For example, the compensation of each alignment mark 801 from the theoretical reference frame can be determined as a function of the distance between the actual position of the alignment mark 801 and the theoretical reference frame, and the ideal position of the screen printing device can be optimization. During the position capture process, the alignment mark position information received by the system controller 101 is thus used, corresponding to the actual position of the alignment mark 801 created during the formation of the (plural) heavily doped region 241, oriented and The conductive layer 370 is positioned. Therefore, since the placement of the conductive layer 370 depends on the actual position of the (plural) heavily doped region 241, rather than the relationship between the (plural) heavily doped regions 241 on the features of the substrate 250, and then the conductive layer 370 is on the substrate 250. The relationship between the (plural) features, the placement error of the conductive layer 370 can be reduced. Those skilled in the art to which the invention pertains will appreciate that the (plural) heavily doped regions 241 correspond to the placement of features of the substrate 250, and then the placement of the conductive layer 370 corresponding to the features of the substrate 250 provides a corresponding (plural) severity The direct alignment of the conductive layer 370 of the doped region 241 is almost twice the error.

整合的對準配置Integrated alignment configuration

第11A圖繪示在重度摻雜區域241形成期間，形成於基板250的表面251上的對準標記1102之一具體實施例。對準標記1102接著被使用來增進重度摻雜區域241上之指狀物260及匯電條261的安置之準確度。需注意的是，既然指狀物260及匯電條261的不良安置可造成形成於太陽能電池元件之相對區域間的短路，指狀物260及匯電條261對重度摻雜區域241的安置及/或對準為重要的。FIG. 11A illustrates one embodiment of an alignment mark 1102 formed on the surface 251 of the substrate 250 during formation of the heavily doped region 241. Alignment marks 1102 are then used to increase the accuracy of placement of fingers 260 and bus bars 261 on heavily doped regions 241. It should be noted that since the poor placement of the fingers 260 and the bus bar 261 can cause a short circuit formed between the opposite regions of the solar cell elements, the fingers 260 and the bus bar 261 are disposed on the heavily doped region 241 and / or alignment is important.

第11B圖為對準標記1102之一個設置的特寫視圖，對準標記1102可被設置於基板250的表面251上之相對角落。第11C圖是藉由沿著剖面線11C-11C(第11B圖)切割所形成的剖面視圖，剖面線11C-11C通過形成於基板250中的對準標記1102之一部份。由偵測器組裝401所收集的定向以及對準資料可被系統控制器101使用，系統控制器101被配置來藉由圖案金屬化技術的使用，以調整及控制重度摻雜區域241的表面上之金屬接觸結構(例如， 指狀物260及匯電條261)的安置。於一具體實施例中，如上聯合第3A至3D圖所討論，使用網板印刷系統100中所進行的網板印刷製程將金屬接觸設置於基板250的表面上。FIG. 11B is a close-up view of one of the alignment marks 1102, which may be disposed at opposite corners on the surface 251 of the substrate 250. 11C is a cross-sectional view formed by cutting along section line 11C-11C (Fig. 11B), and section line 11C-11C passes through a portion of alignment mark 1102 formed in substrate 250. The orientation and alignment data collected by the detector assembly 401 can be used by the system controller 101, which is configured to adjust and control the surface of the heavily doped region 241 by the use of pattern metallization techniques. The placement of the metal contact structure ( eg, fingers 260 and bus bar 261). In one embodiment, as discussed above in connection with Figures 3A through 3D, metal contact is placed on the surface of substrate 250 using a screen printing process performed in screen printing system 100.

於一具體實施例中，對準標記1102包括嵌套特徵(nested feature)的圖案，嵌套特徵如使用前文聯合第5A至5G、6A及7圖所討論之步驟所形成於基板250上的外部特徵1110、中間特徵1111以及內部特徵1112。於基板250的表面上形成對準標記1102以及(複數)重度摻雜區域241的製程可包含圖案化遮罩以及慣用的(複數)摻雜製程的使用。於一實例中，圖案化遮蔽製程可包含圖案化氧化層或光阻材料，且慣用的摻雜製程可包含離子佈植製程或擴散爐形式摻雜製程。於一實例中，形成對準標記1102以及其它(複數)重度摻雜區域241的製程包含下列步驟。首先，介電層(例如， 氧化矽、氮化矽)被沉積於基板之表面251上。接下來，使用一或一個以上圖案化技術，如雷射剝蝕、圖案化蝕刻劑材料，及/或慣用的光刻(photolithography)以及溼式或乾式蝕刻技術，於介電層中形成圖案。圖案化蝕刻劑材料製程之一實例進一步於美國專利申請案序號第12/274,023號[代理人文件編號第APPM 12974.02號]中討論，該案以全文引用方式納入本文中。最後，使用高溫擴散爐形式摻雜步驟(~T800℃)，其中摻雜氣體(例如，POCl3 )的成分被驅動進入於先前圖案化步驟期間形成之暴露的基板表面，以形成(複數)重度摻雜區域241。於某些例子中，於摻雜步驟移除圖案化介電層以及暴露的基板表面後，可執行供選擇的清潔步驟。In one embodiment, the alignment mark 1102 includes a pattern of nested features, such as those formed on the substrate 250 using the steps discussed above in connection with Figures 5A through 5G, 6A, and 7 Feature 1110, intermediate feature 1111, and internal feature 1112. The process of forming alignment marks 1102 and (plural) heavily doped regions 241 on the surface of substrate 250 may include the use of patterned masks and conventional (plural) doping processes. In one example, the patterned masking process can include a patterned oxide layer or a photoresist material, and a conventional doping process can include an ion implantation process or a diffusion furnace form doping process. In one example, the process of forming alignment marks 1102 and other (plural) heavily doped regions 241 includes the following steps. First, a dielectric layer (eg , hafnium oxide , tantalum nitride) is deposited on the surface 251 of the substrate. Next, a pattern is formed in the dielectric layer using one or more patterning techniques, such as laser ablation, patterned etchant materials, and/or conventional photolithography and wet or dry etching techniques. An example of a process for patterning an etchant material is further discussed in U.S. Patent Application Serial No. 12/274,023, the entire disclosure of which is incorporated herein by reference. Finally, use a high temperature diffusion furnace form doping step (~T 800 ° C), wherein the composition of the doping gas (eg, POCl 3 ) is driven into the exposed substrate surface formed during the previous patterning step to form a (plural) heavily doped region 241. In some examples, an optional cleaning step can be performed after the doping step removes the patterned dielectric layer and the exposed substrate surface.

於一具體實施例中，如第11D及11E圖所示，使用光學檢驗系統400、一或一個以上制動器(例如，基板移動制動器、制動器102A)以及系統控制器101，對準網板印刷遮罩102B(第3A圖)對應對準標記1102的位置及/或角定向。在這樣的配置中，藉由使用自輻射源402發射的輻射來決定對應對準標記1102的網板印刷遮罩102B之對準，其中自輻射源402發射的輻射投射透過形成於網板印刷遮罩102B中的特徵102C並由偵測器組裝401收集。於一實例中，對準標記1102中的特徵1110於x-方向上及/或於y-方向上具有尺寸約1 mm的外部維度，而各個特徵1110、1111及/或1112的寬度W1 介於約100以及120 μm之間。於一配置中，嵌套圖案中的外部特徵1110、中間特徵1111以及內部特徵1112為相互等間隔的。外部特徵1110、中間特徵1111以及內部特徵1112可各自由形成於其間的間隙G(第11C圖)所分隔。於一具體實施例中，網板印刷遮罩102B中的特徵102C被配置，使得至少一特徵102C名義上位於各個嵌套特徵的中心線上，且各個特徵102C的寬度W2 比寬度W1 小約20至40 μm。據信，藉由設置特徵102C使得它們的寬度小於對準標記特徵，通常會使印刷標記102B與對準標記1102更易於可靠地對準。於一實例中，寬度W2 介於約60及約80 μm之間。通常，網板印刷遮罩102B對重度摻雜區域241對準可藉由形成於重度摻雜區域241以及基板250材料之間的光學對比而被偵測，其中重度摻雜區域241處於對準標記1102中，而基板250材料可透過形成於網板印刷遮罩102B中的特徵102C來觀察。於一實例中，既然各個特徵102C將被安置覆蓋於相對應的嵌套特徵1110、1111及1112上，若特徵102C理想地對應對準標記1102而對準，則沒有光學對比會被偵測器組裝401以及系統控制器101看見。第11E圖為繪示一配置的特寫平面視圖，其中在制動器102A以及系統控制器101進行任何調整之前，網板印刷遮罩102B中的特徵102C誤對準對應的對準標記1102。在這樣的配置中，因電磁輻射與對準標記1102的部分(例如，嵌套特徵1110、1111及1112)以及基板250的相鄰區域(例如，非-重度摻雜區域)交互作用的緣故，偵測器組裝401可被使用來偵測通過特徵102C並被偵測器組裝401接收之電磁輻射的強度變異。於一具體實施例中，系統控制器101被使用來調整網板印刷遮罩102B對應基板250的定向及/或位置，直到跨越由偵測器組裝401中的攝影機所形成之影像的至少兩個或更多部分的強度變異落入期望範圍為止。於一實例中，跨越由攝影機所形成之影像的至少兩個或更多部分的強度變異被調整，直到此變異最小化為止，其可與特徵102C一致，特徵102C具有小於寬度W1 之寬度W2 ，且直接安置覆蓋並定向於嵌套特徵1110、1111及/或1112上。In one embodiment, as shown in FIGS. 11D and 11E, the optical inspection system 400, one or more brakes (eg, substrate moving brake, brake 102A), and system controller 101 are used to align the screen printing mask. 102B (FIG. 3A) corresponds to the position and/or angular orientation of the alignment mark 1102. In such a configuration, the alignment of the screen printing mask 102B corresponding to the alignment mark 1102 is determined by using radiation emitted from the radiation source 402, wherein the radiation emitted from the radiation source 402 is projected through the screen printing cover. Feature 102C in cover 102B is collected by detector assembly 401. In one example, feature 1110 in alignment mark 1102 has an outer dimension of about 1 mm in the x-direction and/or in the y-direction, while the width W 1 of each feature 1110, 1111, and/or 1112 is It is between about 100 and 120 μm. In one configuration, the outer features 1110, the intermediate features 1111, and the inner features 1112 in the nested pattern are equally spaced from one another. The outer features 1110, the intermediate features 1111, and the inner features 1112 can each be separated by a gap G (Fig. 11C) formed therebetween. In one particular embodiment, the screen printing mask features 102C and 102B are arranged, characterized in that at least a center line 102C is nominally located at various nesting feature and each feature width W is 102C than the width W 1 of 2 of less than about 20 to 40 μm. It is believed that by providing feature 102C such that their width is less than the alignment mark feature, printing mark 102B and alignment mark 1102 are generally more easily and reliably aligned. In one example, the width W 2 is between about 60 and about 80 μm. In general, the alignment of the heavily doped regions 241 by the screen printing mask 102B can be detected by optical contrast between the heavily doped regions 241 and the material of the substrate 250, wherein the heavily doped regions 241 are in alignment marks. In 1102, the substrate 250 material is viewable through features 102C formed in the screen printing mask 102B. In one example, since each feature 102C will be placed over the corresponding nested features 1110, 1111, and 1112, if the feature 102C is ideally aligned with respect to the alignment mark 1102, then no optical contrast will be detected. Assembly 401 and system controller 101 see. 11E is a close-up plan view showing a configuration in which features 102C in screen printing mask 102B are misaligned with corresponding alignment marks 1102 before any adjustments are made to brake 102A and system controller 101. In such a configuration, due to the interaction of electromagnetic radiation with portions of alignment marks 1102 (eg, nested features 1110, 1111, and 1112) and adjacent regions of substrate 250 (eg, non-heavy doped regions), The detector assembly 401 can be used to detect the intensity variation of the electromagnetic radiation received by the feature 102C and received by the detector assembly 401. In one embodiment, the system controller 101 is used to adjust the orientation and/or position of the screen printing mask 102B corresponding to the substrate 250 until at least two of the images formed by the cameras in the detector assembly 401 are spanned. The intensity variation of more parts or more falls within the expected range. In one example, across the image formed by the camera is at least two or more portions of the intensity variation is adjusted until the variation is minimized so far, which may coincide with the features 102C, 102C having features smaller than the width W of the width W. 1 2 and directly placed over the overlay and oriented on the nested features 1110, 1111 and/or 1112.

請參見第11F及11G圖，於一具體實施例中，使用對準標記1103、光學檢驗系統400、一或一個以上制動器(例如， 基板位置制動器、制動器102A)以及系統控制器101，來調整網板印刷遮罩102B相對(複數)重度摻雜區域241的位置及/或角定向。第11F圖繪示對準標記1103之一具體實施例，其被形成為重度摻雜區域241的部分。第11F圖也繪示網板印刷遮罩102B，其被安置覆蓋於對準標記1103上並與對準標記1103對準。第11G圖為第11F圖的一部份之特寫，其繪示網板印刷遮罩102B與對準標記1103對準之配置。於一配置中，網板印刷遮罩102B中的開口1161之尺寸被訂定，以使對準標記1103的邊緣可被光學檢驗系統400中的組件觀察，以使用對準標記1103以及基板250中所發現的重度摻雜區域241之間所創造的光學對比，來決定位置及/或定向誤差。對準標記1103因而被系統控制器101使用，以於後續製程步驟期間增進指狀物260及匯電條261安置於重度摻雜區域241上的準確度。既然在網板印刷製程期間，透過開口1161設置於基板表面的未-重度摻雜區域上之金屬可造成影響太陽能電池表現之短路，因此在訂定網板印刷遮罩102B中的開口1161尺寸，以使對準標記1103的邊緣位於開口1161內的配置中，將這些(複數)對準標記1103安置於基板250的未使用區域中可能是理想的。Referring to Figures 11F and 11G, in one embodiment, the alignment mark 1103, optical inspection system 400, one or more brakes (e.g. , substrate position brake, brake 102A), and system controller 101 are used to adjust the network. The position and/or angular orientation of the plated mask 102B relative to the (multiple) heavily doped regions 241. FIG. 11F illustrates an embodiment of alignment mark 1103 that is formed as part of heavily doped region 241. FIG. 11F also depicts a screen printing mask 102B that is placed over the alignment mark 1103 and aligned with the alignment mark 1103. Figure 11G is a close-up view of a portion of Figure 11F showing the arrangement of the screen printing mask 102B aligned with the alignment mark 1103. In one configuration, the opening 1161 in the screen printing mask 102B is sized such that the edges of the alignment marks 1103 can be viewed by components in the optical inspection system 400 to use the alignment marks 1103 and the substrate 250. The optical contrast created between the heavily doped regions 241 is found to determine position and/or orientation errors. The alignment mark 1103 is thus used by the system controller 101 to enhance the accuracy of the fingers 260 and the bus bar 261 disposed on the heavily doped region 241 during subsequent processing steps. Since the metal disposed on the non-heavy doped region of the substrate surface through the opening 1161 during the screen printing process may cause a short circuit affecting the performance of the solar cell, the size of the opening 1161 in the screen printing mask 102B is determined, In a configuration in which the edge of the alignment mark 1103 is located within the opening 1161, it may be desirable to place these (plural) alignment marks 1103 in an unused area of the substrate 250.

可供選擇的太陽能電池形成製程步驟Alternative solar cell forming process steps

第12A至12H圖繪示，於被使用以形成太陽能電池1200元件的製程序列之不同階段期間的太陽能電池基板250的概要剖面視圖，太陽能電池1200元件具有形成於表面251上的金屬接觸結構。第13圖繪示被使用來形成太陽能電池1200上的(複數)活性區域以及金屬接觸結構之製程序列1300。於第13圖所見的序列對應於本文中討論之第12A至12H圖所描繪的階段。12A through 12H illustrate, in a schematic cross-sectional view of a solar cell substrate 250 during various stages of a process sequence used to form solar cell 1200 components, the solar cell 1200 component having a metal contact structure formed on surface 251. Figure 13 illustrates a programming sequence 1300 that is used to form the (plural) active regions and metal contact structures on the solar cell 1200. The sequence seen in Figure 13 corresponds to the stages depicted in Figures 12A through 12H discussed herein.

於方塊1302，且如第12A及13圖所示，基板250的表面被清潔以移除任何非期望材料或粗糙度。於一具體實施例中，清潔製程可包含如上所討論聯合方塊602之步驟。At block 1302, and as shown in Figures 12A and 13, the surface of the substrate 250 is cleaned to remove any undesired material or roughness. In one embodiment, the cleaning process can include the steps of joint block 602 as discussed above.

於方塊1306，如第12B及13圖所示，於基板250的表面251上進行紋理化製程，以形成紋理化表面1231。於一具體實施例中，表面251為太陽能電池基板的前側，其適於在太陽能電池形成後接受陽光。可使用如上所討論聯合方塊606之步驟來蝕刻基板250的表面251。At block 1306, as shown in FIGS. 12B and 13, a texturing process is performed on surface 251 of substrate 250 to form textured surface 1231. In one embodiment, surface 251 is the front side of the solar cell substrate that is adapted to receive sunlight after formation of the solar cell. The surface 251 of the substrate 250 can be etched using the steps of the joint block 606 as discussed above.

於方塊1308，如第12C及13圖所示，於含摻質氣體存在下，基板被加熱至大於約800 ℃之溫度，以造成含摻質氣體中的摻雜元素擴散進入表面251，以形成輕度經摻雜區域1242。於一具體實施例中，在含磷醯氯(POCl3 )氣體存在下，基板被加熱至介於約800 ℃及約1300 ℃之間的溫度，持續約1至約120分鐘。At block 1308, as shown in Figures 12C and 13, the substrate is heated to a temperature greater than about 800 ° C in the presence of a dopant-containing gas to cause dopant elements in the dopant-containing gas to diffuse into the surface 251 to form Lightly doped region 1242. In one embodiment, the substrate is heated to a temperature between about 800 ° C and about 1300 ° C in the presence of a phosphorus-containing ruthenium chloride (POCl 3 ) gas for from about 1 to about 120 minutes.

於一具體實施例中，在方塊1308中進行的製程完成以移除任何非期望殘留物及/或形成鈍化表面之後，可供選擇的清潔製程於基板250上進行。於一具體實施例中，藉由以清潔溶液弄溼基板的表面來進行清潔製程。於一具體實施例中，藉由以清潔溶液弄溼基板來進行清潔製程，清潔溶液如SC1清潔溶液、SC2清潔溶液、HF最終型態清潔溶液、臭氧化水清潔溶液、氟氫酸(HF)以及過氧化氫(H2 O2 )溶液，或其它適合且具成本效益的清潔溶液。清潔製程可於基板上進行約5秒至約600秒，如約30秒至約240秒，舉例而言，約120秒。In one embodiment, an optional cleaning process is performed on the substrate 250 after the process in block 1308 is completed to remove any undesired residues and/or form a passivated surface. In one embodiment, the cleaning process is performed by wetting the surface of the substrate with a cleaning solution. In one embodiment, the cleaning process is performed by wetting the substrate with a cleaning solution such as SC1 cleaning solution, SC2 cleaning solution, HF final type cleaning solution, ozonized water cleaning solution, hydrofluoric acid (HF). And a hydrogen peroxide (H 2 O 2 ) solution, or other suitable and cost effective cleaning solution. The cleaning process can be carried out on the substrate for from about 5 seconds to about 600 seconds, such as from about 30 seconds to about 240 seconds, for example, about 120 seconds.

於方塊1310，如第12D及13圖所示，抗反射層1245形成於表面251上。於一具體實施例中，抗反射層1245包括薄鈍化/抗反射層(例如， 氧化矽、氮化矽層)。於另一具體實施例中，抗反射層1245包括薄鈍化/抗反射層(例如， 氧化矽、氮化矽層)。於一具體實施例中，鈍化/抗反射層可包括薄(例如， 20-100)本質非晶矽(i-a-Si:H)層，接著是ARC層(例如， 氮化矽)，其可藉物理氣相沉積製程(PVD)或化學氣相沉積製程的使用而被沉積。At block 1310, as shown in Figures 12D and 13, an anti-reflective layer 1245 is formed on surface 251. In one embodiment, the anti-reflective layer 1245 includes a thin passivation/anti-reflective layer (eg , hafnium oxide , tantalum nitride layer). In another embodiment, the anti-reflective layer 1245 includes a thin passivation/anti-reflective layer (eg , hafnium oxide , tantalum nitride layer). In a specific embodiment, the passivation/anti-reflection layer can comprise a thin (eg , 20-100 An intrinsic amorphous iridium (ia-Si:H) layer followed by an ARC layer (eg , tantalum nitride) that can be deposited by the use of a physical vapor deposition process (PVD) or chemical vapor deposition process.

於方塊1312中，如第12E及13圖所示，抗反射層1245的部份視情況被蝕刻，以暴露基板250的表面上之複數個圖案化區域1251，使得在後續步驟中，後續沉積的(複數)金屬層可被置放以密切接觸基板250的表面。可被使用來圖案化抗反射層1245的典型蝕刻製程可包含，但不限於，圖案化及乾式蝕刻技術、雷射剝蝕技術、圖案化及溼式蝕刻技術，或其它類似製程。於一具體實施例中，雷射1290被使用來剝蝕見於鈍化層1245中之材料層，並再融化或移除基板250材料的一部份，其通常也創造了比方塊1306中所形成之紋理化表面更平滑之表面。於一實例中，雷射1290為脈衝IR波長雷射，其跨越基板250的表面進行掃描，以形成圖案化區域1251。於一具體實施例中，形成圖案化區域1251的製程之部分包含下列步驟：藉由圖案化技術的使用，形成一或一個以上對準標記(例如， 第9A至9D、11B及11G圖)於基板250的表面之區域上。In block 1312, as shown in FIGS. 12E and 13, portions of the anti-reflective layer 1245 are optionally etched to expose a plurality of patterned regions 1251 on the surface of the substrate 250 such that in subsequent steps, subsequent deposition The (plural) metal layer can be placed to intimately contact the surface of the substrate 250. Typical etching processes that can be used to pattern the anti-reflective layer 1245 can include, but are not limited to, patterning and dry etching techniques, laser ablation techniques, patterning and wet etching techniques, or other similar processes. In one embodiment, a laser 1290 is used to ablate a layer of material found in the passivation layer 1245 and then melt or remove a portion of the substrate 250 material, which typically also creates a texture than that formed in block 1306. A smoother surface. In one example, the laser 1290 is a pulsed IR wavelength laser that scans across the surface of the substrate 250 to form a patterned region 1251. In one embodiment, the portion of the process for forming the patterned region 1251 includes the step of forming one or more alignment marks ( eg, pages 9A through 9D, 11B, and 11G) by use of a patterning technique. On the area of the surface of the substrate 250.

於方塊1314，如第12F及13圖所示，在含摻質氣體存在下，基板被加熱至大於約800 ℃之溫度，以造成含摻質氣體中的摻雜元素擴散進入圖案化區域1251，以形成重度摻雜區域1261。當作用為傾向防止基板表面的其它區域被摻雜的遮罩，鈍化層1245因而讓暴露的圖案化區域1251之重度摻雜可進行。於一配置中，薄二氧化矽或氮化矽鈍化層1245被使用作為犧牲遮蔽層(sacrificial masking layer)，其於後續步驟中被移除。於方塊1314中所進行的製程之一實例中，在含磷醯氯(POCl3 )氣體存在下，結晶p-型摻雜基板被加熱至介於約800 ℃及約1300 ℃之間的溫度，持續約3至約120分鐘。At block 1314, as shown in Figures 12F and 13, the substrate is heated to a temperature greater than about 800 ° C in the presence of a dopant-containing gas to cause dopant elements in the dopant-containing gas to diffuse into the patterned region 1251, To form heavily doped regions 1261. The passivation layer 1245 thus allows heavy doping of the exposed patterned regions 1251 to act as a mask that tends to prevent other regions of the substrate surface from being doped. In one configuration, a thin hafnium oxide or tantalum nitride passivation layer 1245 is used as a sacrificial masking layer that is removed in subsequent steps. In one example of the process performed in block 1314, the crystalline p-type doped substrate is heated to a temperature between about 800 ° C and about 1300 ° C in the presence of a phosphorus-containing ruthenium chloride (POCl 3 ) gas. It lasts for about 3 to about 120 minutes.

於製程序列1300之另一具體實施例中，於方塊1312及1314所進行的製程被結合於單一步驟中。在這樣的例子中，重度摻雜區域1261形成於聯合方塊1312所討論的步驟期間所執行的製程期間，該製程在這裡稱為雷射摻雜製程。於此配置中，藉由將基板安置於含摻質氣體環境中形成重度摻雜區域1261，而使用雷射剝蝕製程將圖案化區域1251形成於基板250的表面上。於一具體實施例中，藉由於雷射剝蝕製程期間傳遞至經摻雜非晶矽(i-a-Si:H)層以及基板表面的熱之使用，於鈍化層1245中的經摻雜非晶矽(i-a-Si:H)層被使用以協助形成重度摻雜區域1261。In another embodiment of the programming sequence 1300, the processes performed at blocks 1312 and 1314 are combined in a single step. In such an example, heavily doped regions 1261 are formed during the process performed during the steps discussed in conjunction with block 1312, which is referred to herein as a laser doping process. In this configuration, the patterned regions 1251 are formed on the surface of the substrate 250 using a laser ablation process by placing the substrate in a dopant-containing gas environment to form heavily doped regions 1261. In one embodiment, the doped amorphous germanium in the passivation layer 1245 is utilized by the use of heat transferred to the doped amorphous germanium (ia-Si:H) layer and the surface of the substrate during the laser ablation process. An (ia-Si:H) layer is used to assist in forming heavily doped regions 1261.

於方塊1316，於一具體實施例中，在完成方塊1314中進行的製程以移除鈍化層1245中的非晶矽(i-a-Si:H)層；移除來自於方塊1314所進行的製程之任何殘留物及/或於暴露的圖案化區域1251上形成鈍化表面後，可選擇的清潔製程於基板250上進行。於一具體實施例中，清潔製程可藉由以清潔溶液弄溼基板的表面而進行。於一具體實施例中，清潔製程可藉由以清潔溶液弄溼基板而進行，所述清潔溶液如SC1清潔溶液、SC2清潔溶液、HF最終型態清潔溶液、臭氧化水清潔溶液、氟氫酸(HF)以及過氧化氫(H2 O2 )溶液，或其它適合且具成本效益的清潔溶液。清潔製程可於基板上進行約5秒至約600秒，如約30秒至約240秒，例如約120秒。於一具體實施例中，如第12G圖所示，清潔製程也可包含基板250的表面252之機械拋光或研磨步驟，以自表面移除非所欲材料。於一具體實施例中，如本文所討論的的任何清潔製程中，可於漂洗/自旋乾式裝置中使用噴灑/噴霧化學清潔製程來進行溼式清潔製程。At a block 1316, in a specific embodiment, the process performed in block 1314 is completed to remove the amorphous germanium (ia-Si:H) layer in the passivation layer 1245; the process from block 1314 is removed. After any residue and/or a passivated surface is formed on the exposed patterned regions 1251, an optional cleaning process is performed on the substrate 250. In one embodiment, the cleaning process can be performed by wetting the surface of the substrate with a cleaning solution. In a specific embodiment, the cleaning process can be performed by wetting the substrate with a cleaning solution such as SC1 cleaning solution, SC2 cleaning solution, HF final type cleaning solution, ozonized water cleaning solution, hydrofluoric acid (HF) and hydrogen peroxide (H 2 O 2 ) solutions, or other suitable and cost effective cleaning solutions. The cleaning process can be carried out on the substrate for from about 5 seconds to about 600 seconds, such as from about 30 seconds to about 240 seconds, such as about 120 seconds. In one embodiment, as shown in FIG. 12G, the cleaning process can also include a mechanical polishing or grinding step of surface 252 of substrate 250 to remove undesired material from the surface. In one embodiment, a spray/spray chemical cleaning process can be used in a rinse/spin dry apparatus for a wet cleaning process, as in any of the cleaning processes discussed herein.

於方塊1318，如第12H及13圖所繪示，導電特徵1270以圖案方式被沉積於基板250的表面251之重度摻雜區域1261上。於一具體實施例中，所形成的導電特徵1270之厚度約500至約50,000埃()，寬度約10 μm至約200 μm，並含有金屬，如鋁(Al)、銀(Ag)、錫(Sn)、鈷(Co)、錸(Rh)、鎳(Ni)、鋅(Zn)、鉛(Pb)、鈀(Pd)、鉬(Mo)、鈦(Ti)、鉭(Ta)、釩(V)、鎢(W)或鉻(Cr)。於一實例中，導電特徵1270為金屬糊狀物，其含有銀(Ag)或錫(Sn)。At block 1318, as depicted in FIGS. 12H and 13, conductive features 1270 are deposited in a pattern on heavily doped regions 1261 of surface 251 of substrate 250. In one embodiment, the formed conductive features 1270 have a thickness of from about 500 to about 50,000 angstroms ( ), having a width of about 10 μm to about 200 μm, and containing metals such as aluminum (Al), silver (Ag), tin (Sn), cobalt (Co), rhodium (Rh), nickel (Ni), zinc (Zn) Lead (Pb), palladium (Pd), molybdenum (Mo), titanium (Ti), tantalum (Ta), vanadium (V), tungsten (W) or chromium (Cr). In one example, the conductive feature 1270 is a metal paste containing silver (Ag) or tin (Sn).

於方塊1318期間進行的製程之一具體實施例中，如上所討論，使用系統100及可見於製程序列700中的製程步驟將導電特徵1270網板印刷於基板250的表面251上。於此製程中，藉著輻射源402及/或403中之一所發射並由攝影機401A所接收的電磁輻射的期望波長之使用，光學檢驗系統400被用來偵測重度摻雜區域1261之圖案。於另一具體實施例中，因為在基板之紋理化表面與圖案化區域1251之間創造出表面粗糙度變異的緣故，光學檢驗組裝200能使用環境光或來自慣用的燈泡或燈管的光偵測所形成的圖案。接下來，系統控制器101以及制動器102A接著使用由系統控制器所接收的資料，將具有期望的網板印刷圖案形成於其上的網板印刷遮罩，導向並對準形成於基板250上的重度摻雜區域1261。一旦網板印刷遮罩被對準，藉由透過形成於網板印刷遮罩102B中的特徵傳遞導電層糊狀物或膠狀物，將導電特徵1270設置於重度摻雜區域1261上。In one embodiment of the process performed during block 1318, as discussed above, conductive features 1270 are screen printed onto surface 251 of substrate 250 using system 100 and process steps found in process train 700. In this process, optical inspection system 400 is used to detect the pattern of heavily doped regions 1261 by the use of the desired wavelength of electromagnetic radiation emitted by one of radiation sources 402 and/or 403 and received by camera 401A. . In another embodiment, the optical inspection assembly 200 can use ambient light or light detection from a conventional light bulb or tube because of the variation in surface roughness created between the textured surface of the substrate and the patterned region 1251. Measure the pattern formed. Next, the system controller 101 and the brake 102A then use the material received by the system controller to guide and align the screen printing mask having the desired screen printing pattern formed thereon on the substrate 250. The heavily doped region 1261. Once the screen printing mask is aligned, conductive features 1270 are placed over heavily doped regions 1261 by transferring conductive layer paste or gel through features formed in screen printing mask 102B.

進而，於方塊1318期間進行的製程之一具體實施例中，使用慣用的沉積製程，如網板印刷或PVD製程，於基板250的表面252上形成背面金屬層1271。於一具體實施例中，所形成的背面金屬層1271之厚度約500至約50,000埃()，並含有金屬，如鋁(Al)、銀(Ag)、錫(Sn)、鈷(Co)、錸(Rh)、鎳(Ni)、鋅(Zn)、鉛(Pb)、鈀(Pd)、鉬(Mo)、鈦(Ti)、鉭(Ta)、釩(V)、鎢(W)或鉻(Cr)。Further, in one embodiment of the process performed during block 1318, a back metal layer 1271 is formed on surface 252 of substrate 250 using a conventional deposition process, such as a screen printing or PVD process. In one embodiment, the back metal layer 1271 is formed to a thickness of from about 500 to about 50,000 angstroms ( ) and contain metals such as aluminum (Al), silver (Ag), tin (Sn), cobalt (Co), rhodium (Rh), nickel (Ni), zinc (Zn), lead (Pb), palladium (Pd) ), molybdenum (Mo), titanium (Ti), tantalum (Ta), vanadium (V), tungsten (W) or chromium (Cr).

於方塊1320，熱被傳遞至導電特徵1270以及基板250，以造成導電特徵1270中的金屬與重度摻雜區域1261形成電氣連接。如上所討論，可於鄰近系統100之網板印刷部的加熱爐中進行加熱製程。At a block 1320, heat is transferred to the conductive features 1270 and the substrate 250 to cause the metal in the conductive features 1270 to form an electrical connection with the heavily doped regions 1261. As discussed above, the heating process can be performed in a furnace adjacent to the screen printing section of system 100.

可供替代的選擇性發射體形成製程Alternative selective emitter formation process

第14A至14D圖繪示本發明之一可供替代的具體實施例，其繪示於被使用來形成太陽能電池元件的活性區域之製程序列的不同階段之間，的太陽能電池基板1410之概要剖面視圖。繪示於第15圖中的製程序列1600對應第14A至14D圖中所描繪的階段，且製程序列1600可被使用，以於太陽能電池元件(如太陽能電池1400)的前表面1401上形成選擇的發射體結構。於一具體實施例中，如第14D圖所示，被形成的太陽能電池1400通常含有基板1410、重度摻雜區域1420以及接觸層1414，其設置於基板1410的後表面1402上。於一實例中，基板1410為p-型摻雜結晶矽基板。於一配置中，接觸層1414設置覆蓋介電層1411，如二氧化矽層、氮化矽層或氮氧化矽層，其被形成或沉積於後表面1402上。於一具體實施例中，接觸層1414包括金屬，其厚度介於約2000埃()及約50,000埃()之間。於一具體實施例中，接觸層1414為耐火金屬(refractory metal)或耐火金屬合金層，如鈦(Ti)、鉭(Ta)、鎢(W)、鉬(Mo)、氮化鈦(TiN)、氮化鉭(TaN)、氮化鎢(WN)及/或氮化鉬(MoN)。含有耐火金屬或耐火金屬合金的接觸層1414因而能存在於以下討論的製程序列1600中的某些高溫製程步驟期間。然而，既然於某些例子中，接觸層1414可於執行高溫製程之後才被沉積，含有耐火金屬或耐火金屬合金的接觸層1414之存在並非欲限制本發明之範疇。於一具體實施例中，前表面1412被紋理化以增進所形成之太陽能電池1400的光捕捉(light trapping)。14A to 14D are diagrams showing an alternative embodiment of the present invention, which is schematically illustrated in a schematic section of a solar cell substrate 1410 between different stages of a process for forming an active region of a solar cell element. view. The program sequence 1600 illustrated in FIG. 15 corresponds to the stages depicted in FIGS. 14A-14D, and the program sequence 1600 can be used to form a selection on the front surface 1401 of a solar cell component, such as solar cell 1400. Emitter structure. In one embodiment, as shown in FIG. 14D, the formed solar cell 1400 typically includes a substrate 1410, a heavily doped region 1420, and a contact layer 1414 disposed on the back surface 1402 of the substrate 1410. In one example, substrate 1410 is a p-type doped crystalline germanium substrate. In one configuration, the contact layer 1414 is provided with a capping dielectric layer 1411, such as a hafnium oxide layer, a tantalum nitride layer, or a hafnium oxynitride layer, which is formed or deposited on the back surface 1402. In one embodiment, the contact layer 1414 comprises a metal having a thickness of between about 2000 angstroms ( ) and about 50,000 angstroms ( )between. In one embodiment, the contact layer 1414 is a refractory metal or a refractory metal alloy layer such as titanium (Ti), tantalum (Ta), tungsten (W), molybdenum (Mo), titanium nitride (TiN). , tantalum nitride (TaN), tungsten nitride (WN) and/or molybdenum nitride (MoN). The contact layer 1414 containing the refractory metal or refractory metal alloy can thus be present during certain high temperature processing steps in the programming column 1600 discussed below. However, in some instances, contact layer 1414 can be deposited after performing a high temperature process, and the presence of contact layer 1414 containing a refractory metal or refractory metal alloy is not intended to limit the scope of the invention. In one embodiment, the front surface 1412 is textured to enhance light trapping of the formed solar cell 1400.

於方塊1602，如第14A及15圖所示，第一摻質材料1419被沉積於基板1410的前表面1401上。於一具體實施例中，藉噴墨印刷、橡膠印花、網板印刷或其它類似製程的使用，將第一摻質材料1419沉積或印刷成期望的圖案。第一摻質材料1419起初可為液體、糊狀物或膠狀物，其將被使用來形成經摻雜區域。於某些例子中，在設置第一摻質材料1419後，基板被加熱至期望的溫度，以確保第一摻質材料1419維持於前表面1401上，並造成摻質材料1419硬化、增密及/或與前表面1401形成鍵結。於一具體實施例中，第一摻質材料1419為膠狀物或糊狀物，其含有n-型摻質，其被使用來重度摻雜基板1410。典型使用於矽太陽能電池製造中的n-型摻質為，例如，磷(P)、砷(As)或銻(Sb)等元素。於一具體實施例中，第一摻質材料1419為含磷摻質糊狀物，其被沉積於基板1410的前表面1401上，且基板被加熱至介於約80℃及約500℃之間的溫度。於一具體實施例中，第一摻質材料1419可能含有選自由聚磷酸、磷矽玻璃前驅物、磷酸(H3 PO4 )、亞磷酸(H3 PO3 )、次磷酸(H3 PO2 )及/或其多種銨鹽所組成之群組中的材料。於一具體實施例中，第一摻質材料1419為膠狀物或糊狀物，其含有約6至約30原子%的磷。At block 1602, as shown in FIGS. 14A and 15, the first dopant material 1419 is deposited on the front surface 1401 of the substrate 1410. In one embodiment, the first dopant material 1419 is deposited or printed into a desired pattern by inkjet printing, rubber printing, screen printing, or the like. The first dopant material 1419 can initially be a liquid, paste or gel that will be used to form a doped region. In some examples, after the first dopant material 1419 is disposed, the substrate is heated to a desired temperature to ensure that the first dopant material 1419 is maintained on the front surface 1401 and causes the dopant material 1419 to harden, densify, and / or form a bond with the front surface 1401. In one embodiment, the first dopant material 1419 is a jelly or paste that contains an n-type dopant that is used to heavily dope the substrate 1410. The n-type dopant typically used in the manufacture of tantalum solar cells is, for example, an element such as phosphorus (P), arsenic (As) or antimony (Sb). In one embodiment, the first dopant material 1419 is a phosphorus-containing dopant paste deposited on the front surface 1401 of the substrate 1410, and the substrate is heated to between about 80 ° C and about 500 ° C. temperature. In a specific embodiment, the first dopant material 1419 may contain a material selected from the group consisting of polyphosphoric acid, a phosphonium glass precursor, phosphoric acid (H 3 PO 4 ), phosphorous acid (H 3 PO 3 ), hypophosphorous acid (H 3 PO 2 ). And/or materials in the group consisting of its various ammonium salts. In one embodiment, the first dopant material 1419 is a jelly or paste containing from about 6 to about 30 atomic percent phosphorus.

如先前所描述並於第3A圖所示，描述於方塊1602中的製程可於位在系統100內的網板印刷腔室102中進行。於一具體實施例中，使用網板印刷製程將摻雜層沉積於基板上，網板印刷製程可由自美國加州聖克拉拉之應用材料公司的Baccini S.p.A部門所獲得之SoftlineTM 工具進行。網板印刷腔室102以及系統100之實例進一步詳述於2009年4月6日所提申之美國臨時專利申請序號第12/418,912號(代理人文件編號第APPM/13541號，名稱為「NEXT GENERATION SCREEN PRINTING SYSTEM」)，以及於2008年11月19日所提申之美國專利公告號第2009/0142880號，名稱為「SOLAR CELL CONTACT FORMATION PROCESS USING A PATTERNED ETCHANT MATERIAL」，該些文獻以全文引用方式納入本文中。As previously described and illustrated in FIG. 3A, the process described in block 1602 can be performed in screen printing chamber 102 located within system 100. In one embodiment, a doped layer is deposited on the substrate using a screen printing process performed by a Softline (TM) tool available from Baccini SpA, Applied Materials, Inc., Santa Clara, California. The stencil printing chamber 102 and the system 100 are further described in detail in U.S. Provisional Patent Application Serial No. 12/418,912, filed on Apr. 6, 2009. GENERATION SCREEN PRINTING SYSTEM"), and US Patent Publication No. 2009/0142880, filed on November 19, 2008, entitled "SOLAR CELL CONTACT FORMATION PROCESS USING A PATTERNED ETCHANT MATERIAL", which is incorporated by reference in its entirety. The way is included in this article.

於方塊1604，如第14B及15圖所示，基板被加熱至大於約750℃的溫度，以造成第一摻質材料1419中的摻雜元素擴散進入基板1410的前表面1401，因而形成基板1410內的重度摻雜區域1420。各個所形成的重度摻雜區域1420可因而被使用作為與太陽能電池1400的前表面構成良好電氣連接的重度摻雜區域。於一實例中，對所形成的重度摻雜區域1420而言理想的是，具有每平方面積約10至50歐姆之薄片電阻。於方塊1604所進行的製程之一具體實施例中，基板在氮氣(N2 )、氧氣(O2 )、氫氣(H2 )、空氣或其組合物存在的情況下，被加熱至介於約750℃及約1300℃之間的溫度，持續約1分鐘至約120分鐘。於一實例中，基板於快速熱退火(RTA)腔室中之富含氮氣(N2 )的環境中被加熱至約1000 ℃，持續約5分鐘。At block 1604, as shown in FIGS. 14B and 15, the substrate is heated to a temperature greater than about 750 ° C to cause dopant elements in the first dopant material 1419 to diffuse into the front surface 1401 of the substrate 1410, thereby forming the substrate 1410. A heavily doped region 1420 within. Each of the heavily doped regions 1420 formed may thus be used as a heavily doped region that forms a good electrical connection with the front surface of the solar cell 1400. In one example, it is desirable for the heavily doped region 1420 to be formed to have a sheet resistance of about 10 to 50 ohms per square area. In one embodiment of the process performed at block 1604, the substrate is heated to about between in the presence of nitrogen (N 2 ), oxygen (O 2 ), hydrogen (H 2 ), air, or a combination thereof. The temperature between 750 ° C and about 1300 ° C lasts from about 1 minute to about 120 minutes. In one example, the substrate is heated to about 1000 ° C in a nitrogen-rich (N 2 )-rich environment in a rapid thermal annealing (RTA) chamber for about 5 minutes.

於方塊1604所進行的製程之一具體實施例中，以期望的摻質原子(例如， n-型摻質)摻雜所沉積的第一摻質材料1419之間的基板1410前表面1401之區域，以形成經摻雜區域1430。於一具體實施例中，將第一摻質材料1419驅入基板的前表面1401之製程的部分期間，前表面被暴露於含摻質蒸氣或氣體中，以形成經摻雜區域1430。於一實例中，於熱製程期間，藉由一些第一摻質材料1419的蒸氣製造含摻質蒸氣的至少一部份。於另一實例中，於熱製程期間，前表面1401暴露於磷酸中，以於n-型太陽能電池基板中形成經摻雜區域1430。於再一實例中，當基板於管式爐(tube furnace)進行熱製程時，基板的前表面1401暴露於POCl3 或其它期望的含摻質氣體中。雖然未於此繪示，但人們將注意到，接觸層1414據信能有利地形成可靠的遮罩，其可防止後表面1402被含任何非所欲摻質蒸氣所摻雜，所述蒸氣可被使用以形成重度摻雜區域1420以及經摻雜區域1430，或為形成重度摻雜區域1420以及經摻雜區域1430的副產物。於一實例中，對所形成的經摻雜區域1430而言理想的是，具有每平方面積約80至200歐母的薄片電阻。In one embodiment of the process performed at block 1604, the region of the front surface 1401 of the substrate 1410 between the deposited first dopant material 1419 is doped with a desired dopant atom (eg , an n-type dopant). To form a doped region 1430. In one embodiment, during driving of the first dopant material 1419 into a portion of the process of the front surface 1401 of the substrate, the front surface is exposed to a dopant-containing vapor or gas to form a doped region 1430. In one example, at least a portion of the dopant-containing vapor is produced by the vapor of some of the first dopant material 1419 during the thermal process. In another example, during the thermal process, front surface 1401 is exposed to phosphoric acid to form doped regions 1430 in the n-type solar cell substrate. In yet another example, the front surface 1401 of the substrate is exposed to POCl 3 or other desired dopant-containing gas as the substrate is thermally processed in a tube furnace. Although not illustrated herein, it will be noted that the contact layer 1414 is believed to advantageously form a reliable mask that prevents the back surface 1402 from being doped with any undesired dopant vapors. It is used to form heavily doped regions 1420 and doped regions 1430, or to form byproducts of heavily doped regions 1420 and doped regions 1430. In one example, it is desirable for the formed doped region 1430 to have a sheet resistance of about 80 to 200 ohms per square area.

藉由可附屬於系統100的熱處理模組或第二製程模組，來進行方塊1604中所描述的驅入(drive-in)製程。於一具體實施例中，熱處理模組為快速熱退火(RTA)腔室，如可自美國加州聖克拉拉之應用材料公司獲得的Vantage Radiance PlusTM RTP腔室。其它處理腔室，如退火腔室、管式爐或帶狀爐(belt furnace)腔室也可被使用來實施本發明。於一具體實施例中，製程腔室包含於設置在可自美國加州聖克拉拉之應用材料公司的Baccini S.p.A部門所獲得之SoftlineTM 工具內部的製程模組中。The drive-in process described in block 1604 is performed by a heat treatment module or a second process module that can be attached to system 100. In one particular embodiment, the heat treatment module for the rapid thermal annealing (RTA) chamber, such as available from Vantage Radiance Plus TM RTP chamber of Applied Materials, Santa Clara, California company obtained. Other processing chambers, such as annealing chambers, tube furnaces or belt furnace chambers, may also be used to practice the invention. In one particular embodiment, the process chamber included in the set Softline (TM) tool inside available from Applied Materials of Santa Clara, California company sector Baccini SpA obtained in the process module.

於方塊1606，如第14C及15圖所示，抗反射層1431形成於基板的前表面1401上。於一具體實施例中，抗反射層1431包括薄鈍化/抗反射層(例如，氮化矽、氧化矽)。儘管第14C圖繪示之抗反射層1431為單一層，但此配置並非意欲限制本文所述之本發明的範疇，而僅意欲示範抗反射層的一個實例。於一實例中，薄鈍化/抗反射層包括兩個或更多個層，其包括氮化矽，或二氧化矽或氮化矽。於方塊1606中所描述之抗反射層的沉積，可藉由安置於系統100內的第四沉積製程模組來進行。於一具體實施例中，使用PVD腔室或CVD腔室來沉積抗反射層。如上所討論，可使用自美國加州聖克拉拉之應用材料公司獲得的ATONTM 工具，將抗反射層形成於太陽能電池基板的一或一個以上表面上。於一具體實施例中，可使用第三製程模組，舉例而言，附屬於系統100的電漿增強CVD沉積模組，來進行抗反射層形成製程。At block 1606, as shown in Figures 14C and 15, an anti-reflective layer 1431 is formed on the front surface 1401 of the substrate. In one embodiment, the anti-reflective layer 1431 includes a thin passivation/anti-reflective layer (eg, tantalum nitride, hafnium oxide). Although the anti-reflective layer 1431 illustrated in FIG. 14C is a single layer, this configuration is not intended to limit the scope of the invention described herein, but is merely intended to exemplify one example of an anti-reflective layer. In one example, the thin passivation/anti-reflective layer comprises two or more layers comprising tantalum nitride, or hafnium oxide or tantalum nitride. The deposition of the anti-reflective layer described in block 1606 can be performed by a fourth deposition process module disposed within system 100. In a specific embodiment, a PVD chamber or a CVD chamber is used to deposit the anti-reflective layer. As discussed above, the tool can be used from ATON TM of Santa Clara, California obtained by Applied Materials, Inc., the anti-reflection layer formed on one or more surfaces of the solar cell substrate. In one embodiment, a third process module, for example, a plasma enhanced CVD deposition module attached to system 100, can be used to perform the antireflective layer formation process.

於方塊1608，如第14D及15圖所示，圖案化導電層1432被沉積覆蓋抗反射層1431。於一具體實施例中，所形成的導電層1432的厚度介於約2000埃()及約50,000埃()之間，並含有金屬。於一具體實施例中，所形成的導電層1432由含金屬糊狀物，如網板印刷於基板的前表面1401上的含銀(Ag)糊狀物所形成。於一具體實施例中，導電層1432的期望圖案沉積覆蓋於形成的重度摻雜區域1420上，使得於方塊1610進行後續熱製程之後，導電層1432將與重度摻雜區域1420形成良好的電氣接觸。於一具體實施例中，理想的是於重度摻雜區域1420上沉積導電層1432之前，移除設置覆蓋於重度摻雜區域1420上的抗反射層1431之部分。通常，將導電層1432與重度摻雜區域1420對準及安置的製程可使用前述的一或一個以上製程，如於第7圖所描述的製程序列700。於一具體實施例中，導電層1432為含銀材料，其藉由在連接系統100的第四製程模組中使用網板印刷製程、噴墨印刷或其它類似製程，而被沉積為期望的圖案。At block 1608, as shown in Figures 14D and 15, patterned conductive layer 1432 is deposited overlying anti-reflective layer 1431. In one embodiment, the formed conductive layer 1432 has a thickness of about 2000 angstroms ( ) and about 50,000 angstroms ( ) and contains metal. In one embodiment, the formed conductive layer 1432 is formed from a silver-containing (Ag) paste containing a metal paste, such as a stencil printed on the front surface 1401 of the substrate. In one embodiment, the desired pattern deposition of conductive layer 1432 overlies the formed heavily doped region 1420 such that after subsequent thermal processing of block 1610, conductive layer 1432 will form good electrical contact with heavily doped region 1420. . In one embodiment, it is desirable to remove portions of the anti-reflective layer 1431 disposed over the heavily doped regions 1420 prior to depositing the conductive layer 1432 over the heavily doped regions 1420. In general, the process of aligning and arranging conductive layer 1432 with heavily doped region 1420 can use one or more of the processes described above, such as program 700 described in FIG. In one embodiment, the conductive layer 1432 is a silver-containing material that is deposited into a desired pattern by using a screen printing process, inkjet printing, or the like in a fourth process module of the connection system 100. .

描述於方塊1608中之導電層的沉積可藉由安置在系統100上的第四沉積製程模組執行。第四沉積製程模組可包含，但不限於，物理氣相沉積(PVD)腔室、濺鍍腔室、化學氣相沉積(CVD)腔室、電漿增強化學氣相沉積(PECVD)腔室。於一具體實施例中，使用可自美國加州聖克拉拉之應用材料公司獲得的PVD腔室來沉積導電層。其它處理腔室，如熱線化學氣相沉積(HWCVD)腔室、離子佈植/摻雜腔室、原子層沉積(ALD)腔室或快速熱氧化(RTO)腔室等，也可被使用來實施本發明。The deposition of the conductive layer described in block 1608 can be performed by a fourth deposition process module disposed on system 100. The fourth deposition process module can include, but is not limited to, a physical vapor deposition (PVD) chamber, a sputtering chamber, a chemical vapor deposition (CVD) chamber, and a plasma enhanced chemical vapor deposition (PECVD) chamber. . In one embodiment, a conductive layer is deposited using a PVD chamber available from Applied Materials, Inc. of Santa Clara, California. Other processing chambers, such as hot wire chemical vapor deposition (HWCVD) chambers, ion implantation/doping chambers, atomic layer deposition (ALD) chambers, or rapid thermal oxidation (RTO) chambers, can also be used. The invention is implemented.

於方塊1610，基板通常被加熱至大於400℃及/或小於約800℃之溫度，以造成導電層1432增密及/或擴散進入基板1410的前表面1401，以與重度摻雜區域1420的部分形成期望的歐姆接觸。於方塊1610進行的製程之一具體實施例中，在氮氣(N2 )、氧氣(O2 )、氫氣(H2 )、空氣或其組合物存在下，基板被加熱至介於約400℃及約500℃之間的溫度，持續約1分鐘至約120分鐘。於一具體實施例中，基板於安置在系統100內的第五沉積製程模組中加熱。於一實例中，如上所討論，第五沉積製程模組為設置在可自美國加州聖克拉拉之應用材料公司的Baccini S.p.A部門所獲得之SoftlineTM 工具內部的製程腔室。或者，安置於系統100內的熱處理模組可被用來加熱基板。在這樣的例子中，可使用退火腔室、管式爐或帶狀爐腔室。既然形成於導電層1432間的電氣連接將具有低接觸電阻，且將不會藉由「釘(spiking)」穿透形成的發射體至下方的p-型材料，而損壞形成的太陽能電池接點，本文所述的具體實施例相較於其它慣用技術更具有優勢。於本文所揭露的配置中，使用安置於系統100上的燒爐(firing furnace)模組，透過抗反射層及/或介電層，燒製導電層1432。於一實例中，燒爐模組為適於加熱基板至期望溫度的爐，使基板與形成於基板表面上的圖案化金屬層形成期望接觸。示範性燒爐模組之實例進一步詳盡揭露於2009年3月3日提申之美國專利申請序號第61/157,179號(代理人文件編號第APPM/14258L號，名稱「CRYSTALLINE SILICON SOLAR CELL PRODUCTION LINE HAVING A WAFER SAWING MODULE」)，其以全文引用方式納入本文中。At block 1610, the substrate is typically heated to a temperature greater than 400 ° C and/or less than about 800 ° C to cause the conductive layer 1432 to densify and/or diffuse into the front surface 1401 of the substrate 1410 to interface with the heavily doped region 1420. The desired ohmic contact is formed. In one embodiment of the process performed at block 1610, the substrate is heated to between about 400 ° C in the presence of nitrogen (N 2 ), oxygen (O 2 ), hydrogen (H 2 ), air, or a combination thereof. A temperature between about 500 ° C lasts from about 1 minute to about 120 minutes. In one embodiment, the substrate is heated in a fifth deposition process module disposed within system 100. In one example, as discussed above, the Softline (TM) tool fifth internal deposition process is provided in the module available from Applied Materials of Santa Clara, California company sector Baccini SpA obtained the process chamber. Alternatively, a heat treatment module disposed within system 100 can be used to heat the substrate. In such an example, an annealing chamber, a tube furnace, or a belt furnace chamber can be used. Since the electrical connection formed between the conductive layers 1432 will have a low contact resistance, and will not penetrate the formed emitter to the underlying p-type material by "spiking", the formed solar cell contacts will be damaged. The specific embodiments described herein are more advantageous than other conventional techniques. In the configuration disclosed herein, the conductive layer 1432 is fired through an anti-reflective layer and/or a dielectric layer using a firing furnace module disposed on the system 100. In one example, the furnace module is a furnace adapted to heat the substrate to a desired temperature to form a desired contact between the substrate and the patterned metal layer formed on the surface of the substrate. An example of an exemplary furnace module is disclosed in detail in U.S. Patent Application Serial No. 61/157,179, filed on Mar. 3, 2009, entitled,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, A WAFER SAWING MODULE"), which is incorporated herein by reference in its entirety.

雖然上述製程序列1600提供了形成太陽能電池元件的活性區域之可供選擇的手段，上述製程步驟的數量及順序並非欲限制本文所述之本發明的範疇。於一實例中，於方塊1602前的分離製程步驟中，第一摻質材料1419被沉積於輕度摻雜或中等摻雜n-型區域上，且該n-型區域形成在p-型摻雜基板1410中。於另一實例中，可於方塊1602至1604中的製程步驟之前，進行方塊1606中的製程。While the above-described programming 1600 provides an alternative means of forming an active region of a solar cell component, the number and order of the above-described process steps are not intended to limit the scope of the invention as described herein. In one example, in the separation process step prior to block 1602, the first dopant material 1419 is deposited on a lightly doped or moderately doped n-type region, and the n-type region is formed in a p-type dopant. In the hetero-substrate 1410. In another example, the process in block 1606 can be performed prior to the process steps in blocks 1602 through 1604.

儘管以上多數討論內容著重於使用網板印刷腔室及系統的討論，以協助描述本發明之一或一個以上具體實施例，但既然在不悖離本文所描述之本發明的基本範疇下，其它圖案化材料沉積製程及系統也可聯合本文所述之光學檢驗系統以及太陽能電池製程方法而被使用，本文所述的配置並非欲限制本發明之範疇。Although much of the discussion above has focused on the use of stencil printing chambers and systems to assist in describing one or more embodiments of the present invention, it is not departing from the basic scope of the invention described herein. Patterned material deposition processes and systems can also be used in conjunction with the optical inspection systems and solar cell processing methods described herein, and the configurations described herein are not intended to limit the scope of the invention.

前述說明係針對本發明之具體實施例，然在不悖離本發明基本範疇下，亦可推得其他或進一步的具體實施例，且其範圍係由如附申請專利範圍予以限定。The foregoing description is directed to the specific embodiments of the present invention, and other embodiments of the present invention may be devised without departing from the scope of the invention.

10．．．太陽能電池10. . . Solar battery

11．．．晶圓11. . . Wafer

14．．．指狀物14. . . Finger

15．．．匯電條15. . . Electricity bar

16．．．抗反射塗層16. . . Anti-reflective coating

17．．．重度摻雜區域17. . . Severely doped region

18．．．前側18. . . Front side

19．．．後側19. . . Back side

21．．．p-型基底區域twenty one. . . P-type substrate region

22．．．n-型發射區域twenty two. . . N-type emission area

22A．．．頂部表面22A. . . Top surface

23．．．p-n接合點區域twenty three. . . P-n junction area

25．．．後接觸25. . . Post contact

100．．．系統100. . . system

101．．．系統控制器101. . . System controller

102A．．．制動器102A. . . Brake

102B．．．網板印刷遮罩102B. . . Screen printing mask

102C．．．特徵102C. . . feature

102．．．腔室102. . . Chamber

111．．．引入輸送帶111. . . Introducing conveyor belt

112．．．引出輸送帶112. . . Lead conveyor

113．．．輸入輸送帶113. . . Input conveyor

114．．．出口輸送帶114. . . Export conveyor belt

116．．．皮帶116. . . Belt

121．．．攝影機121. . . camera

122、122A、122B、122C．．．觀察區塊122, 122A, 122B, 122C. . . Observation block

130．．．轉動制動器組裝130. . . Rotating brake assembly

131．．．印刷巢131. . . Printing nest

135．．．進料捲軸135. . . Feed reel

136．．．捲取捲軸136. . . Take-up reel

137．．．支撐材料137. . . Support material

138A．．．基板支撐表面138A. . . Substrate support surface

138．．．平臺138. . . platform

139．．．輸送帶組裝139. . . Conveyor belt assembly

140．．．滾輪140. . . Wheel

147．．．驅動輪147. . . Drive wheel

148．．．制動器148. . . Brake

200．．．檢驗組裝200. . . Inspection assembly

230．．．圖案230. . . pattern

241．．．重度摻雜區域241. . . Severely doped region

242．．．金屬接觸結構242. . . Metal contact structure

250A、250B．．．邊緣250A, 250B. . . edge

250．．．基板250. . . Substrate

251、252．．．表面251, 252. . . surface

260．．．指狀物260. . . Finger

261．．．匯電條261. . . Electricity bar

300．．．太陽能電池300. . . Solar battery

318．．．分離區域318. . . Separation area

328．．．暴露區域328. . . Exposed area

329．．．第一摻質材料329. . . First dopant material

341．．．平坦區域341. . . Flat area

351．．．紋理化表面351. . . Textured surface

354．．．抗反射層354. . . Antireflection layer

361．．．區域361. . . region

370．．．導電層370. . . Conductive layer

400．．．光學檢驗系統400. . . Optical inspection system

401．．．偵測器組裝401. . . Detector assembly

402、403．．．輻射源402, 403. . . Radiation source

401A、401B、401C、401D．．．攝影機401A, 401B, 401C, 401D. . . camera

600A、600B、600C、700．．．製程序列600A, 600B, 600C, 700. . . Program column

602~616、702~706．．．步驟602~616, 702~706. . . step

800．．．理想位置800. . . Ideal location

801、801A、801B、801C、801D．．．對準標記801, 801A, 801B, 801C, 801D. . . Alignment mark

805．．．遮蔽材料805. . . Masking material

806．．．區域806. . . region

1102、1103．．．對準標記1102, 1103. . . Alignment mark

1110、1111、1112．．．特徵1110, 1111, 1112. . . feature

1161．．．開口1161. . . Opening

1200．．．太陽能電池1200. . . Solar battery

1231．．．紋理化表面1231. . . Textured surface

1242．．．經摻雜區域1242. . . Doped region

1245．．．抗反射層1245. . . Antireflection layer

1251．．．圖案化區域1251. . . Patterned area

1261．．．重度摻雜區域1261. . . Severely doped region

1270．．．導電特徵1270. . . Conductive characteristics

1271．．．背面金屬層1271. . . Back metal layer

1290．．．雷射1290. . . Laser

1300、1600．．．製程序列1300, 1600. . . Program column

1302~1320、1602~1610．．．步驟1302~1320, 1602~1610. . . step

1400．．．太陽能電池1400. . . Solar battery

1401．．．前表面1401. . . Front surface

1402．．．後表面1402. . . Back surface

1410．．．基板1410. . . Substrate

1411．．．介電層1411. . . Dielectric layer

1412．．．前表面1412. . . Front surface

1414．．．接觸層1414. . . Contact layer

1419．．．第一摻質材料1419. . . First dopant material

1420．．．重度摻雜區域1420. . . Severely doped region

1430．．．經摻雜區域1430. . . Doped region

1431．．．抗反射層1431. . . Antireflection layer

1432．．．導電層1432. . . Conductive layer

為使本發明之以上引述的特徵得以更詳細被瞭解，係已參照具體實施例而更具體說明以上所簡述之發明，其中部分具體實施例係繪示於如附圖式中。然而，需注意的是，所附圖式僅為說明本發明之典型具體實施例，而非用於限制其範疇，本發明亦允許其它等效具體實施例。The invention as briefly described above has been described in detail with reference to the specific embodiments thereof, which are illustrated in the accompanying drawings. It is to be understood, however, that the appended claims

第1A圖繪示含有前側金屬化內連線圖案之先前技術的太陽能電池之等角視圖。FIG. 1A is an isometric view of a prior art solar cell including a front side metallization interconnect pattern.

第1B圖繪示第1A圖中之先前技術的太陽能電池之剖面側視圖。FIG. 1B is a cross-sectional side view of the prior art solar cell of FIG. 1A.

第2A圖為根據本發明之一具體實施例的基板之表面的平面圖，其具有重度摻雜區域以及圖案化金屬接觸結構形成於其上。2A is a plan view of a surface of a substrate having a heavily doped region and a patterned metal contact structure formed thereon in accordance with an embodiment of the present invention.

第2B圖為第2A圖所示，根據本發明之一具體實施例的基板之表面的一部份之特寫側剖面視圖。2B is a close-up side cross-sectional view of a portion of the surface of the substrate in accordance with an embodiment of the present invention, as shown in FIG. 2A.

第3A圖為可與本發明之具體實施例協同使用以形成期望圖案之多重層的系統之概要等角視圖。Figure 3A is a schematic isometric view of a system that can be used in conjunction with a particular embodiment of the present invention to form multiple layers of a desired pattern.

第3B圖為根據本發明之一具體實施例的第3A圖之系統的概要頂部平面圖。Figure 3B is a schematic top plan view of the system of Figure 3A in accordance with an embodiment of the present invention.

第3C圖為根據本發明之一具體實施例的網板印刷系統之印刷巢部份的等角視圖。Figure 3C is an isometric view of a printed nest portion of a screen printing system in accordance with an embodiment of the present invention.

第3D圖為轉動制動器組裝之一具體實施例的概要等角視圖，該轉動制動器組裝具有檢驗組裝，其被安置以檢驗根據本發明之一具體實施例的基板之前表面。Figure 3D is a schematic isometric view of one embodiment of a rotary brake assembly having an inspection assembly positioned to inspect a front surface of a substrate in accordance with an embodiment of the present invention.

第4A圖為根據本發明之一具體實施例的光學檢驗系統之概要剖面視圖。4A is a schematic cross-sectional view of an optical inspection system in accordance with an embodiment of the present invention.

第4B圖為根據本發明之一具體實施例，安置於印刷巢之光學檢驗系統的概要剖面視圖。Figure 4B is a schematic cross-sectional view of an optical inspection system disposed in a printing nest, in accordance with an embodiment of the present invention.

第5A至5G圖繪示，於根據本發明之一具體實施例的太陽能電池形成製程序列的不同階段之間，的太陽能電池之概要剖面視圖。5A-5G are schematic cross-sectional views of solar cells between different stages of a solar cell forming process in accordance with an embodiment of the present invention.

第6A圖繪示被用來形成根據本發明之具體實施例的太陽能電池之製程序列。Fig. 6A is a diagram showing a procedure for forming a solar cell according to a specific embodiment of the present invention.

第6B圖繪示被用來形成根據本發明之具體實施例的太陽能電池之製程序列。Figure 6B illustrates a programming sequence used to form a solar cell in accordance with a particular embodiment of the present invention.

第6C圖繪示被用來形成根據本發明之具體實施例的太陽能電池之製程序列。Figure 6C depicts a programming sequence used to form a solar cell in accordance with a particular embodiment of the present invention.

第7圖繪示被用來於根據本發明之具體實施例的太陽能電池重度摻雜區域上沉積導電層之製程序列。Figure 7 illustrates a process for depositing a conductive layer on a heavily doped region of a solar cell in accordance with a particular embodiment of the present invention.

第8A圖為根據本發明之一具體實施例之基板的表面之平面圖，其具有重度摻雜區域以及對準標記形成於其上。Figure 8A is a plan view of a surface of a substrate having a heavily doped region and an alignment mark formed thereon in accordance with an embodiment of the present invention.

第8B圖為根據本發明之一具體實施例的基板之表面的側面剖面視圖，其具有重度摻雜區域、對準標記以及遮蔽材料形成於其上。Figure 8B is a side cross-sectional view of the surface of a substrate having heavily doped regions, alignment marks, and a masking material formed thereon, in accordance with an embodiment of the present invention.

第9A圖繪示可被印刷於根據本發明之一具體實施例的基板上之對準標記的多個實例。Figure 9A illustrates a plurality of examples of alignment marks that can be printed on a substrate in accordance with an embodiment of the present invention.

第9B至9D圖繪示根據本發明之具體實施例的基板之前表面上的多種對準標記配置。9B through 9D illustrate various alignment mark configurations on the front surface of the substrate in accordance with a particular embodiment of the present invention.

第10圖為轉動制動器組裝之一具體實施例的概要等角視圖，其中的光學檢驗組裝包含根據本發明之具體實施例的複數個光學檢驗系統。Figure 10 is a schematic isometric view of one embodiment of a rotary brake assembly, wherein the optical inspection assembly includes a plurality of optical inspection systems in accordance with a particular embodiment of the present invention.

第11A圖為基板之表面的平面圖，其具有重度摻雜區域以及對準標記形成於根據本發明之一具體實施例的基板之前表面上。Figure 11A is a plan view of the surface of the substrate having heavily doped regions and alignment marks formed on the front surface of the substrate in accordance with an embodiment of the present invention.

第11B圖為平面圖，其繪示形成於根據本發明之一具體實施例的基板上的對準標記之實例。11B is a plan view showing an example of alignment marks formed on a substrate according to an embodiment of the present invention.

第11C圖為根據本發明之一具體實施例的基板之表面的概要剖面視圖。Figure 11C is a schematic cross-sectional view of the surface of a substrate in accordance with an embodiment of the present invention.

第11D圖為被使用來將網板印刷遮罩對準根據本發明之一具體實施例的基板之光學檢驗系統的概要剖面視圖。Figure 11D is a schematic cross-sectional view of an optical inspection system used to align a screen printing mask to a substrate in accordance with an embodiment of the present invention.

第11E圖為平面圖，其繪示根據本發明之一具體實施例的對準標記以及網板印刷遮罩之實例。Figure 11E is a plan view showing an example of an alignment mark and a screen printing mask in accordance with an embodiment of the present invention.

第11F圖為設置覆蓋基板之表面的網板印刷遮罩之平面圖，根據本發明之一具體實施例，該基板之表面具有重度摻雜區域以及對準標記形成於其上。Figure 11F is a plan view of a screen printing mask disposed to cover a surface of a substrate having a heavily doped region and an alignment mark formed thereon in accordance with an embodiment of the present invention.

第11G圖為設置覆蓋基板之表面的網板印刷遮罩之特寫平面圖，根據本發明之一具體實施例，該基板之表面具有重度摻雜區域以及對準標記形成於其上。Figure 11G is a close-up plan view of a screen printing mask disposed to cover a surface of a substrate having a heavily doped region and an alignment mark formed thereon in accordance with an embodiment of the present invention.

第12A至12H圖繪示，於根據本發明之一具體實施例的太陽能電池形成製程序列的不同階段之間，的太陽能電池之概要剖面視圖。12A through 12H are schematic cross-sectional views of solar cells between different stages of a solar cell forming process in accordance with an embodiment of the present invention.

第13圖繪示被使用來形成根據本發明之具體實施例的太陽能電池之製程序列。Figure 13 illustrates a programming sequence used to form a solar cell in accordance with a particular embodiment of the present invention.

第14A至14D圖繪示，於被使用來形成太陽能電池元件的活性區域之製程序列的不同階段之間，的太陽能電池基板之概要剖面視圖。14A to 14D are schematic cross-sectional views of the solar cell substrate between different stages of the program sequence used to form the active region of the solar cell element.

第15圖繪示根據本發明之具體實施例的形成太陽能電池元件之活性區域的方法之流程圖。Figure 15 is a flow chart showing a method of forming an active region of a solar cell element in accordance with an embodiment of the present invention.

為了增進瞭解，盡可能使用相同的元件符號來表示各圖式中相同的元件。應知在一具體實施例中所揭示的元件也可有利地用於其它具體實施例，而無須另行特定說明。For the sake of understanding, the same component symbols are used to represent the same components in each drawing. It is to be understood that the elements disclosed in the specific embodiments may be used in other embodiments without departing from the specific scope.

然而，需注意的是，所附圖式僅為說明本發明之示範具體實施例，而非用於限制其範疇，本發明亦允許其它等效具體實施例。It is to be understood, however, that the appended claims

101．．．系統控制器101. . . System controller

241．．．重度摻雜區域241. . . Severely doped region

250．．．基板250. . . Substrate

251、252．．．表面251, 252. . . surface

400．．．光學檢驗系統400. . . Optical inspection system

401．．．偵測器組裝401. . . Detector assembly

402、403．．．輻射源402, 403. . . Radiation source

Claims (32)

一種太陽能電池形成製程，包括下列步驟：安置一基板於一基板接受表面上，其中該基板具有一第一表面以及形成於其上之一圖案化經摻雜區域；決定該基板上之該圖案化經摻雜區域的實際位置，其中決定實際位置包括下列步驟：朝向該第一表面發射電磁輻射；自該第一表面的一區域接收具一第一波長之電磁輻射；使用接收自該基板上該圖案化經摻雜區域之該決定的實際位置之資訊，將一網板印刷遮罩中之一或一個以上特徵對準該圖案化經摻雜區域；以及在將該一或一個以上特徵對準該圖案化經摻雜區域後，經過該一或一個以上特徵沉積一材料層於該圖案化經摻雜區域的至少一部分上。A solar cell forming process includes the steps of: arranging a substrate on a substrate receiving surface, wherein the substrate has a first surface and a patterned doped region formed thereon; determining the patterning on the substrate The actual position of the doped region, wherein the determining the actual position comprises the steps of: emitting electromagnetic radiation toward the first surface; receiving electromagnetic radiation having a first wavelength from a region of the first surface; using the receiving from the substrate Patterning the determined actual position information of the doped regions, aligning one or more features of a screen printed mask with the patterned doped regions; and aligning the one or more features After patterning the doped regions, a layer of material is deposited over at least a portion of the patterned doped regions through the one or more features. 如申請專利範圍第1項所述之太陽能電池形成製程，其中該層包括一導電材料，該基板包括矽，且該圖案化經摻雜區域具有大於約1×1018 原子/cm3 之一摻質濃度。The solar cell forming process of claim 1, wherein the layer comprises a conductive material, the substrate comprises germanium, and the patterned doped region has a doping of greater than about 1 x 10 18 atoms/cm 3 Qualitative concentration. 如申請專利範圍第1項所述之太陽能電池形成製程，其中接收具一第一波長之電磁輻射係藉由一光學偵測器實施，該光學偵測器安置於鄰近該第一表面處，且該發射的電磁輻射被提供至相對該第一表面之一第二表面。The solar cell forming process of claim 1, wherein receiving electromagnetic radiation having a first wavelength is performed by an optical detector disposed adjacent to the first surface, and The emitted electromagnetic radiation is provided to a second surface relative to one of the first surfaces. 如申請專利範圍第1項所述之太陽能電池形成製程，其中決定該圖案化經摻雜區域之該實際位置包括下列步驟：擷取設置於該基板之一表面上的二或二個以上對準標記之一光學影像，並且決定各個對準標記對一理想位置在位置上的差異，以決定根據該光學影像之補償(offset)。The solar cell forming process of claim 1, wherein determining the actual position of the patterned doped region comprises the steps of: capturing two or more alignments disposed on a surface of the substrate One of the optical images is marked and the difference in position of each of the alignment marks for an ideal position is determined to determine an offset from the optical image. 如申請專利範圍第4項所述之太陽能電池形成製程，其中該對準標記之該理想位置係於印刷該第一層前對應該基板之該至少一特徵而決定。The solar cell forming process of claim 4, wherein the ideal position of the alignment mark is determined by the at least one characteristic of the corresponding substrate before printing the first layer. 如申請專利範圍第4項所述之太陽能電池形成製程，其中至少三個對準標記使用一網板印刷製程形成於該基板之該表面上。The solar cell forming process of claim 4, wherein at least three alignment marks are formed on the surface of the substrate using a screen printing process. 如申請專利範圍第6項所述之太陽能電池形成製程，其中比較該對準標記之該實際位置包括下列步驟：建構一第一參考線於兩個該對準標記之間，並建構一第二參考線於一第三對準標記以及該第一參考線之間，其中該第二參考線垂直該第一參考線。The solar cell forming process of claim 6, wherein comparing the actual position of the alignment mark comprises the steps of: constructing a first reference line between the two alignment marks, and constructing a second The reference line is between a third alignment mark and the first reference line, wherein the second reference line is perpendicular to the first reference line. 如申請專利範圍第1項所述之太陽能電池形成製程，其中安置一基板於一基板接受表面上包括下列步驟：接受一基板於一支撐材料之一第一表面上；使用連接該支撐材料之一制動器，移動該支撐材料跨越該基板支撐件的一表面；以及抽空該支撐材料之該第一表面背後之一區域，以抓持設置於該第一表面上之該基板抵住該基板支撐件；且將一網板印刷遮罩中之特徵對準該圖案化經摻雜區域進一步包括下列步驟：將該支撐材料之該第一表面上所抓持的該基板安置於該網板印刷遮罩下。The solar cell forming process of claim 1, wherein placing a substrate on a substrate receiving surface comprises the steps of: receiving a substrate on a first surface of a supporting material; using one of the supporting materials a brake, moving the support material across a surface of the substrate support; and evacuating an area behind the first surface of the support material to grasp the substrate disposed on the first surface against the substrate support; Aligning the features in a screen printing mask with the patterned doped region further includes the step of disposing the substrate held on the first surface of the support material under the screen printing mask . 如申請專利範圍第1項所述之太陽能電池形成製程，其中決定該基板上之該圖案化經摻雜區域的實際位置進一步包括下列步驟：安置該基板接受表面或一網板印刷遮罩，致使該發射的電磁輻射之一部份在其被一偵測器接收前，先通過形成於該網板印刷遮罩中的一或一個以上特徵，以及設置於該基板接受表面上的該基板之該第一表面，其中將一網板印刷遮罩中之一或一個以上特徵對準該圖案化經摻雜區域包括下列步驟：將形成於該網板印刷遮罩中之該特徵的位置調整至形成於該基板上之該圖案化經摻雜區域的一部份。 The solar cell forming process of claim 1, wherein determining the actual position of the patterned doped region on the substrate further comprises the steps of: locating the substrate receiving surface or a screen printing mask, such that One or more of the emitted electromagnetic radiation passes through one or more features formed in the screen printing mask and the substrate disposed on the substrate receiving surface before being received by a detector a first surface, wherein aligning one or more features of a screen printing mask to the patterned doped region comprises the step of: adjusting a position of the feature formed in the screen printing mask to form The portion of the patterned doped region on the substrate. 如申請專利範圍第9項所述之太陽能電池形成製程，其中形成於該基板上之該圖案化經摻雜區域的該部份，包括二或二個以上嵌套構件(nested element)，其具有一間隙形成於其間，其中該二或二個以上嵌套構件中之至少一個具有一第一寬度，且形成於該網板印刷遮罩中之該特徵具有一第二寬度小於該第一寬度。 The solar cell forming process of claim 9, wherein the portion of the patterned doped region formed on the substrate comprises two or more nested elements having A gap is formed therebetween, wherein at least one of the two or more nesting members has a first width, and the feature formed in the screen printing mask has a second width that is less than the first width. 如申請專利範圍第9項所述之太陽能電池形成製程，其中決定該基板上之該圖案化經摻雜區域的實際位置進一步包括下列步驟：偵測由該偵測器自該圖案化經摻雜區域的二或二個以上區域所接收之該發射的電磁輻射之強度變化。 The solar cell forming process of claim 9, wherein determining the actual position of the patterned doped region on the substrate further comprises the steps of: detecting the doping from the patterning by the detector A change in the intensity of the emitted electromagnetic radiation received by two or more regions of the region. 一種太陽能電池形成製程，包括下列步驟：設置一遮蔽材料於一基板之一第一表面上的一圖案中；當該遮蔽材料被設置於該第一表面上，蝕刻該第一表面的一部份，其中該遮蔽材料實質上阻擋該第一表面的複數個設置有該遮蔽材料的區域之蝕刻；擷取該第一表面的一部份之一光學影像；使用自該擷取的光學影像所接收的資訊，將一網板印刷遮罩中的多個特徵對準該複數個區域中的至少一部份；以及經過該等特徵沉積一材料層於該複數個區域的至少一部分上。A solar cell forming process includes the steps of: disposing a masking material in a pattern on a first surface of a substrate; and etching a portion of the first surface when the masking material is disposed on the first surface The masking material substantially blocks etching of the plurality of regions of the first surface provided with the masking material; capturing an optical image of a portion of the first surface; receiving using the optical image captured from the first surface Information for aligning a plurality of features in a screen printing mask with at least a portion of the plurality of regions; and depositing a layer of material over at least a portion of the plurality of regions via the features. 如申請專利範圍第12項所述之太陽能電池形成製程，其中該遮蔽材料包括一第一摻質材料。The solar cell forming process of claim 12, wherein the masking material comprises a first dopant material. 如申請專利範圍第13項所述之太陽能電池形成製程，進一步包括下列步驟：加熱該基板以及該遮蔽材料，以造成該第一摻質材料擴散進入該第一表面並形成一圖案化經摻雜區域，其中加熱該基板以及該遮蔽材料係於蝕刻該第一表面之該部份後進行。The solar cell forming process of claim 13, further comprising the steps of: heating the substrate and the masking material to cause the first dopant material to diffuse into the first surface and form a patterned doped a region in which the substrate is heated and the masking material is applied after etching the portion of the first surface. 如申請專利範圍第13項所述之太陽能電池形成製程，進一步包括下列步驟：在蝕刻該第一表面之一部份後，擴散相當量之該第一摻質材料進入該第一表面之一部份。The solar cell forming process of claim 13, further comprising the step of: after etching a portion of the first surface, diffusing a substantial amount of the first dopant material into one of the first surfaces Share. 如申請專利範圍第12項所述之太陽能電池形成製程，其中擷取該第一表面的一部份之一光學影像包括下列步驟：擷取設置於該基板之一表面上的二或二個以上對準標記之一光學影像，並且決定各個對準標記對一理想位置在位置上的差異，以決定根據該光學影像之補償(offset)。The solar cell forming process of claim 12, wherein extracting an optical image of a portion of the first surface comprises the steps of: capturing two or more of the surfaces disposed on one surface of the substrate One of the optical images of the indicia is aligned and the difference in position of each of the alignment marks for an ideal position is determined to determine an offset from the optical image. 如申請專利範圍第14項所述之太陽能電池形成製程，其中該基板包括矽，且該圖案化經摻雜區域具有大於約1×1018 原子/cm3 之一摻質濃度。The solar cell forming process of claim 14, wherein the substrate comprises germanium, and the patterned doped region has a dopant concentration greater than about 1 x 10 18 atoms/cm 3 . 如申請專利範圍第12項所述之太陽能電池形成製程，進一步包括下列步驟：加熱該基板以及該遮蔽材料，以造成置於該遮蔽材料中之一第一摻質材料擴散進入該第一表面並形成一圖案化經摻雜區域，其中擷取該圖案化經摻雜區域的一部份之一光學影像包括下列步驟：朝向該第一表面發射電磁輻射；以及自該第一表面的一區域接收電磁輻射，其波長介於約850 nm及約4 μm之間。The solar cell forming process of claim 12, further comprising the steps of: heating the substrate and the masking material to cause diffusion of one of the first dopant materials disposed in the masking material into the first surface and Forming a patterned doped region, wherein extracting an optical image of a portion of the patterned doped region comprises the steps of: emitting electromagnetic radiation toward the first surface; and receiving from a region of the first surface Electromagnetic radiation having a wavelength between about 850 nm and about 4 μm. 如申請專利範圍第12項所述之太陽能電池形成製程，其中擷取該圖案化經摻雜區域的該部份之該光學影包括下列步驟：註記於蝕刻該第一表面之一部份的製程期間，由該遮蔽材料所覆蓋之該第一表面之一部份，以及不由該遮蔽材料所覆蓋之該第一表面之一部份，所反射或透過其傳送之該電磁輻射的強度差異。 The solar cell forming process of claim 12, wherein the optically shadowing the portion of the patterned doped region comprises the step of: marking a process of etching a portion of the first surface And a portion of the first surface covered by the masking material, and a portion of the first surface not covered by the masking material, a difference in intensity of the electromagnetic radiation transmitted or transmitted therethrough. 如申請專利範圍第12項所述之太陽能電池形成製程，進一步包括下列步驟：將一第一量之一第一摻質原子擴散進入該基板之該第一表面，以在設置該遮蔽材料於該第一表面上之前，形成一第一經摻雜區域；以及將一第二量之一第二摻質原子擴散進入該第一表面，以在設置該遮蔽材料於該第一表面上並蝕刻該第一表面的該部份之後，形成一第二經摻雜區域。 The solar cell forming process of claim 12, further comprising the steps of: diffusing a first amount of the first dopant atoms into the first surface of the substrate to provide the masking material thereon Forming a first doped region before the first surface; and diffusing a second amount of the second dopant atom into the first surface to dispose the masking material on the first surface and etching the After the portion of the first surface, a second doped region is formed. 如申請專利範圍第20項所述之太陽能電池形成製程，其中該第一摻質原子及該第二摻質原子分別選自由磷、砷、銻、硼、鋁及鎵所組成的元素之群組。 The solar cell forming process of claim 20, wherein the first dopant atom and the second dopant atom are respectively selected from the group consisting of phosphorus, arsenic, antimony, boron, aluminum, and gallium. . 如申請專利範圍第20項所述之太陽能電池形成製程，其中該第一摻質原子及該第二摻質原子係同類型的摻質原子，且該第一經摻雜區域中之該第一摻質原子的該第一量，大於該第二經摻雜區域中之該第二摻質原子的該第二量。The solar cell forming process of claim 20, wherein the first dopant atom and the second dopant atom are of the same type of dopant atoms, and the first of the first doped regions The first amount of dopant atoms is greater than the second amount of the second dopant atoms in the second doped region. 一種太陽能電池形成製程，包括下列步驟：蝕刻一基板之一第一表面的一部份；沉積一第一層覆蓋經蝕刻之該第一表面的一部份；移除設置覆蓋經蝕刻之該第一表面上之該沉積的第一層的一部份，以暴露該基板之一區域；傳送一含摻質材料至該基板之該暴露的區域，以於該基板內形成一經摻雜區域；擷取該基板之該第一表面的一部份之一影像，其中該影像包括該暴露的區域之一部份以及該經蝕刻的第一表面之一部份；使用自該擷取的影像所接收的資訊，將一網板印刷遮罩中的多個特徵對準該暴露的區域；以及在該等特徵對準該暴露的區域後，經過該等特徵沉積一材料層於該圖案化經摻雜區域的至少一部份上。A solar cell forming process includes the steps of: etching a portion of a first surface of a substrate; depositing a first layer over a portion of the etched first surface; removing the cover over the etched portion a portion of the deposited first layer on a surface to expose a region of the substrate; a dopant-containing material to the exposed region of the substrate to form a doped region in the substrate; Taking an image of a portion of the first surface of the substrate, wherein the image includes a portion of the exposed region and a portion of the etched first surface; receiving using the captured image Information for aligning a plurality of features in a screen printing mask to the exposed area; and after the features are aligned with the exposed area, depositing a layer of material through the features to the patterned doped At least part of the area. 如申請專利範圍第23項所述之太陽能電池形成製程，其中擷取該第一表面的一部份之一影像包括下列步驟：擷取設置於該基板之一表面上的二或二個以上對準標記之一光學影像，並且決定各個對準標記對一理想位置在位置上的差異，以決定根據該光學影像之補償(offset)。The solar cell forming process of claim 23, wherein capturing an image of a portion of the first surface comprises the steps of: capturing two or more pairs disposed on a surface of the substrate One of the optical images is quasi-marked and the difference in position of each of the alignment marks for an ideal position is determined to determine an offset from the optical image. 如申請專利範圍第23項所述之太陽能電池形成製程，其中擷取該圖案化經摻雜區域的一部份之一光學影像包括下列步驟：朝向該第一表面發射電磁輻射；以及自該第一表面的一區域接收電磁輻射，其波長介於約850 nm及約4 μm之間。The solar cell forming process of claim 23, wherein extracting an optical image of a portion of the patterned doped region comprises the steps of: emitting electromagnetic radiation toward the first surface; and An area of a surface receives electromagnetic radiation having a wavelength between about 850 nm and about 4 μm. 如申請專利範圍第23項所述之太陽能電池形成製程，其中該第一層包括選自由氮化矽(SiN)、非晶矽(a-Si)以及二氧化矽(SiO2 )所組成之群組中之一材料。The solar cell forming process of claim 23, wherein the first layer comprises a group selected from the group consisting of tantalum nitride (SiN), amorphous germanium (a-Si), and germanium dioxide (SiO 2 ). One of the materials in the group. 如申請專利範圍第23項所述之太陽能電池形成製程，其中該第一層包括設置覆蓋於該基板之該第一表面上之一第二層，以及設置覆蓋於該第二層上之一第三層，其中該第二層包括選自由氮化矽(SiN)以及二氧化矽(SiO2 )所組成之群組中之一材料，且該第三層包括非晶矽(a-Si)。The solar cell forming process of claim 23, wherein the first layer comprises a second layer disposed on the first surface of the substrate, and a cover layer disposed on the second layer Three layers, wherein the second layer comprises one material selected from the group consisting of tantalum nitride (SiN) and cerium oxide (SiO 2 ), and the third layer includes amorphous germanium (a-Si). 一種用以處理一基板之裝置，包括：一基板支撐表面；一電磁輻射源，其被安置以朝向該基板支撐表面發射電磁輻射；一偵測器組裝，其被安置以接收朝向設置於該基板支撐表面上之一基板的一表面之該發射的電磁輻射之至少一部份，其中該接收的電磁輻射提供一波長，該波長優先地藉由形成於該基板之一表面上的一圖案化重度摻雜區域穿透傳輸或反射，或優先地藉由不包括該圖案化重度摻雜區域的該基板之多個區域穿透傳輸或反射；一沉積腔室具有一網板印刷遮罩以及至少一個制動器，其被配置以定位該網板印刷遮罩；以及一控制器，其被配置以自該偵測器組裝接收關於形成於一基板之一表面上的一圖案化重度摻雜區域的位置之一訊號，其中該基板設置於該基板支撐表面上，並且根據自該偵測器組裝所接收的資訊，調整該網板印刷遮罩相對於該圖案化重度摻雜區域的位置。An apparatus for processing a substrate, comprising: a substrate supporting surface; an electromagnetic radiation source disposed to emit electromagnetic radiation toward the substrate supporting surface; a detector assembly disposed to receive the substrate disposed on the substrate Supporting at least a portion of the emitted electromagnetic radiation on a surface of one of the substrates on the surface, wherein the received electromagnetic radiation provides a wavelength preferentially by a patterned severity formed on a surface of the substrate The doped region penetrates the transmission or reflection, or preferentially transmits or reflects through a plurality of regions of the substrate that do not include the patterned heavily doped region; a deposition chamber having a screen printing mask and at least one a brake configured to position the screen printing mask; and a controller configured to receive from the detector assembly a position regarding a patterned heavily doped region formed on a surface of a substrate a signal, wherein the substrate is disposed on the substrate supporting surface, and adjusting the screen printing mask relative to the information according to the information received from the detector assembly The position of the patterned heavily doped region. 如申請專利範圍第28項所述之裝置，其中該基板支撐件係一材料輸送帶組裝的部分，該材料輸送帶組裝包括一第一材料安置機構，其適於提供一支撐材料至一平臺，其中該支撐材料包括該基板支撐表面，其設置於該支撐材料之一側邊上，該側邊相對於與該平臺之一表面接觸的該支撐材料之另一側邊。The device of claim 28, wherein the substrate support is a portion of a material conveyor belt assembly, the material conveyor assembly comprising a first material placement mechanism adapted to provide a support material to a platform, Wherein the support material comprises the substrate support surface disposed on a side of the support material, the side being opposite the other side of the support material in contact with a surface of the platform. 如申請專利範圍第28項所述之裝置，其中該支撐材料之一第一表面係安置於該基板支撐表面上，且該支撐材料包括一多孔材料，當一真空被施加於該第一表面時，該多孔材料容許空氣自一第二表面通過至該第一表面。The device of claim 28, wherein a first surface of the support material is disposed on the substrate support surface, and the support material comprises a porous material, when a vacuum is applied to the first surface The porous material allows air to pass from a second surface to the first surface. 如申請專利範圍第28項所述之裝置，其中該電磁輻射源固設於最接近該基板支撐表面之一第一側邊處，且該偵測器組裝固設於相對該第一側邊之一側邊上。The device of claim 28, wherein the electromagnetic radiation source is fixed at a first side of the support surface closest to the substrate, and the detector assembly is fixed to the first side On one side. 如申請專利範圍第28項所述之裝置，其中該偵測器組裝包括一攝影機以及至少一個光學濾波器，其設置於該基板支撐表面以及該攝影機之間，其中該光學濾波器適於容許該波長通過其中。The apparatus of claim 28, wherein the detector assembly comprises a camera and at least one optical filter disposed between the substrate support surface and the camera, wherein the optical filter is adapted to allow The wavelength passes through it.
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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI476874B (en) * 2011-07-29 2015-03-11 Hon Hai Prec Ind Co Ltd Glass pad with circuit trace and method of making the same
TWI424584B (en) * 2011-11-30 2014-01-21 Au Optronics Corp Method of forming solar cell
CN108674010A (en) * 2018-06-28 2018-10-19 无锡奥特维科技股份有限公司 Screen printing apparatus, laminating machine and method for printing screen
CN113905561B (en) * 2021-10-11 2023-02-24 Oppo广东移动通信有限公司 Shell with texture pattern, processing method thereof and electronic equipment

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5709905A (en) * 1997-01-28 1998-01-20 Motorola, Inc. Apparatus and method for automatic monitoring and control of stencil printing
JP2003197932A (en) * 2001-12-25 2003-07-11 Kyocera Corp Solar battery element and method for manufacturing the same
US6815001B1 (en) * 1999-02-08 2004-11-09 Canon Kabushiki Kaisha Electronic device, method for producing electron source and image forming device, and apparatus for producing electronic device
JP2005011886A (en) * 2003-06-17 2005-01-13 Sharp Corp Solar cell and manufacturing method therefor
US7171897B2 (en) * 2003-06-05 2007-02-06 Georgia Tech Research Corporation System and methods for data-driven control of manufacturing processes
TW200818526A (en) * 2006-10-04 2008-04-16 Gigastorage Corp Method for forming a solar cell
TW200818527A (en) * 2006-10-04 2008-04-16 Gigastorage Corp Solar cell
JP2008139251A (en) * 2006-12-05 2008-06-19 Toshiba Corp Ion implantation pattern detecting technique
TW200903820A (en) * 2007-05-11 2009-01-16 Jusung Eng Co Ltd Method, apparatus and system of manufacturing solar cell
US7547362B2 (en) * 2002-12-18 2009-06-16 Lg Display Co., Ltd. Dispenser for liquid crystal display panel and method for controlling gap between substrate and nozzle using the same

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10284359A (en) * 1997-04-11 1998-10-23 Mitsubishi Electric Corp Device and method for recognizing wafer
DE10146879A1 (en) * 2001-09-26 2003-04-17 Thermosensorik Gmbh Method for non-destructive detection of cracks in silicon wafers and solar cells involves placement of the test item between a light source and an electronic camera so that light transmitted through any cracks can be detected
DE102005061785B4 (en) * 2005-12-23 2008-04-03 Basler Ag Method and apparatus for detecting cracks in silicon wafers
DE102007006525B4 (en) * 2007-02-06 2009-05-14 Basler Ag Method and device for detecting defects
DE102007057011B4 (en) * 2007-11-23 2011-04-28 Pi Photovoltaik-Institut Berlin Ag Detecting device and method for detecting damage of a solar cell by means of photoluminescence
US8215473B2 (en) * 2008-05-21 2012-07-10 Applied Materials, Inc. Next generation screen printing system
US8183081B2 (en) * 2008-07-16 2012-05-22 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a metal layer mask

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5709905A (en) * 1997-01-28 1998-01-20 Motorola, Inc. Apparatus and method for automatic monitoring and control of stencil printing
US6815001B1 (en) * 1999-02-08 2004-11-09 Canon Kabushiki Kaisha Electronic device, method for producing electron source and image forming device, and apparatus for producing electronic device
JP2003197932A (en) * 2001-12-25 2003-07-11 Kyocera Corp Solar battery element and method for manufacturing the same
US7547362B2 (en) * 2002-12-18 2009-06-16 Lg Display Co., Ltd. Dispenser for liquid crystal display panel and method for controlling gap between substrate and nozzle using the same
US7171897B2 (en) * 2003-06-05 2007-02-06 Georgia Tech Research Corporation System and methods for data-driven control of manufacturing processes
JP2005011886A (en) * 2003-06-17 2005-01-13 Sharp Corp Solar cell and manufacturing method therefor
TW200818526A (en) * 2006-10-04 2008-04-16 Gigastorage Corp Method for forming a solar cell
TW200818527A (en) * 2006-10-04 2008-04-16 Gigastorage Corp Solar cell
JP2008139251A (en) * 2006-12-05 2008-06-19 Toshiba Corp Ion implantation pattern detecting technique
TW200903820A (en) * 2007-05-11 2009-01-16 Jusung Eng Co Ltd Method, apparatus and system of manufacturing solar cell

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