TWI450998B - 塗布系統、塗布工件及其製造方法 - Google Patents
塗布系統、塗布工件及其製造方法 Download PDFInfo
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Description
本發明係關於塗布工件及其製造之領域。更具體來說,係關於藉由磨耗保護塗布之工件的磨耗保護及此塗布之沉積。
TiAlN塗布係廣泛的用於作為磨耗保護應用之物理氣相沉積(PVD)塗布。AlCrN系統已被報告為:在塗布件之優越的應用壽命期間具有優越之機械性質(例如硬度及熱硬度)、熱及潤滑性質。如此技藝中一般所了解的,計量係數並未清楚的表示,例如,AlCrN代表,更精確的來說,(Aly
Cr1-y
)N(0<y<1)。
US 7 226 670揭示一種工件,其以一種薄膜層系統塗布,係包括至少一層由(Aly
Cr1-y
)X所組成的薄膜,其中X=N、C、B、CN、BN、CBN、NO、CO、BO、CNO、BNO或BNCO,該工件為研磨工具(milling tool)、滾齒刀(hob)、球端磨粉機(ball nose mill)、平面或側面銑刀(planar or profiling cutter)、清除工具(clearing tool)、絞刀(reamer)、車削及切削用嵌入物(insert for turning and milling)、模頭或射出模具,顯示優越的磨耗保護性能。
US 7 348 074揭示一種塗布概念,係由10層一捆的多層結構所組成。此概念在鑽孔應用時顯示了良好的保護性能。
美國專利申請案US 2008/0229891揭示了一種多層塗布,其包括至少一層包括材料(TiAl)X(其中X=N、CN、CNO或NO)或(AlCr)X(其中X=N、CN、CNO或NO)之層A,及包括至少一層具有(AlCrSiMe)X(其中X=N、CN、CNO或NO)之層B,其中Me代表Nb、Mo、Ta或W。
此外,該US 2008/0229891揭示該至少一層B之層結構係設計為由至少二種不同的結晶相所組成。其可為例如立方及六方晶相部分。
於該US 2008/0229891,其進一步揭示層A及層B之間的厚度比率為重要的議題,當以層A對層B的厚度比為高於1來塗布時,具有優越的性能。
所有此等先前技藝之塗布顯示對或多或少的特定用途具良好的磨耗保護性質。因此其還有對廣範圍之不同應用提供磨耗保護塗布之需求。
因此,本發明之一個目標為創造一種不具有上述缺點之塗布系統。具體而言,應提供一種塗布系統,其可用於廣範圍之不同應用。此外,應提供各塗布工件及對應之製造如此的工件之方法。
本發明之另一目標為提供一種塗布系統、一種相對應之塗布工件、及製造如此提供了改良之磨耗保護及/或抗磨耗性質之工件的方法。
本發明之另一目標為提供一種用於塗布工件之塗布系統、一種相對應之塗布工件、及一種製造如此之對非常廣範圍的應用提供了增加的工具壽命之工件的方法。其中,該應用可包括連續及間斷的切削應用,包括但不限於:鑽孔、研磨、絞孔、車削、捲繞、切螺紋及滾齒應用。
本發明之另一種應用為提供一種用於塗布工件之塗布系統、一種相對應之塗布工件,及一種製造如此之工件的方法,其中該工件為用於切削部件之工件,其可由各種材料所製成,例如,比方說鐵質及非鐵質金屬以及複合材料。
本發明之另一目標為提供一種用於塗布工件之塗布系統,一種相對應之塗布工件及一種製造如此之工件的方法,其中該工件可用於各種工作條件,例如,比方說乾式切削、帶有乳液及/或液態冷卻劑之切削、帶有最低量潤滑(MQL)之切削、及帶有氣態冷卻劑之切削。
本發明之另依目標為本發明之另一目標為提供一種用於塗布工件之塗布系統,一種相對應之塗布工件及一種製造如此之工件的方法,其中該工件為鑽頭、端銑刀、崁入物、或滾齒刀。
本發明之另一目標為提供一種用於塗布工件之塗布系統,一種相對應之塗布工件及一種製造如此之工件的方法,其中該工件基材實質上係由鋼,具體而言為高速鋼、黏結碳化物、立方晶系氮化硼、金屬陶瓷或陶瓷材料所製成。
本發明之另一目標為提供一種用於塗布工件之塗布系統,一種相對應之塗布工件及一種製造如此之工件的方法,其中該工件係適用於切削至少一種,較佳為大多數之:鐵質及非鐵質材料,較佳為硬化鋼、退火鋼、合金鋼、低碳鋼、不鏽鋼、鈦系合金、鎳系合金、及複合材料。
本發明之另一目標為提供一種用於塗布工件之塗布系統,一種相對應之塗布工件及一種製造如此之工件的方法,其中該塗布應具有優越的機械及熱性質,具體而言係對硬度、熱硬度、及抗氧化性而言。
本發明之另一目標為提供一種用於塗布工件之塗布系統,一種相對應之塗布工件及一種製造如此之工件的方法,其中該塗布應在低及高溫應用條件下對工件提供優越之保護。
本發明之另一目標為提供一種製造塗布工件之方法,具體而言係如上述之工件,其可特別有時間效率的進行。
本發明之另一目標為提供一種製造塗布工件之方法,具體而言係如上述之工件,其係特別簡易的進行。
進一步的目標揭示於以下敘述及具體實施例。
此等目標之至少一者係至少部分的為申請專利範圍之塗布系統、工件及/或方法所達成。
該塗布系統為一種多層塗布,包括至少一層型式A的層,型式A的層係實質上由(Aly
Cr1-y
)X所組成,其中X表示:N、CN、BN、NO、CNO、CBN、BNO及CNBO;y表示金屬相部分之計量組成。該多層塗布進一步包括至少一層型式B的層,型式B的層係實質上由(Alu
Cr1-u-v-w
Siv
Mew
)X所組成,其中X表示:N、CN、BN、NO、CNO、CBN、BNO及CNBO;及其中Me表示:W、Nb、Mo、Ta及其混合物;u、v及w表示金屬相部分之計量組成。藉此,可提供一種磨耗保護塗布系統,其可用於廣範圍之不同應用。
係數y代表,更精確的且符合本技藝的來說,為符合0<y<1之數值,而同樣更精確的且符合本技藝的來說,u為符合0<u<1之數值,v為符合0<v<1之數值,及w為符合0<w<1之數值,其中u+v+w=1。此外,更精確的且符合本技藝的來說,X的計量值永遠為1,即,在X包括大於一種之化學元素時,此等元素之計量係數之合為1,比方說當X=BNO時,X表示B1-a-b
Na
Ob
(且0<a<1及0<b<1)。
於一具體實施例中,層A對層B之厚度比率係高於1,且更佳為實現高於1.5。藉此,可達成特別良好的磨耗保護。型式A之較厚層與型式B之較薄層產生極佳的結果。
於一具體實施例中,其可與一或多種前述之具體實施例組合,該至少一層型式B的層係設計成包括至少二種結晶相,更具體而言該至少一層型式B的層實質上包括正好二種結晶相。
於此具體實施例,該至少一層型式B的層之第一結晶相為立方晶相,及該至少一層型式B的層的第二晶相為六方晶相。
於此情況,在一特定的具體實施例,該六方晶相含量為<該至少一層型式B的層之50vol.%,更具體的量係介於5vol.%及40vol.%之間。
於一具體實施例中,其可與一或多種前述之具體實施例組合,該至少一層型式A的層實質上為立方晶體結構。
於一具體實施例中,其可與一或多種前述之具體實施例組合,該至少一層型式A的層之金屬部分的計量組成之特徵在於0.5<y<0.7。
於一具體實施例中,其可與一或多種前述之具體實施例組合,該至少一層型式B的層之金屬部分的計量組成之特徵在於0.5<u<0.7、0.01<v<0.15及0.002<w<0.1,更具體而言w<0.05。
於一具體實施例中,其可與一或多種前述之具體實施例組合,型式B的層係直接沉積於型式A的層上。
於一具體實施例中,其可與一或多種前述之具體實施例組合,型式B的層係包夾在型式A的第一層及型式A的第二層間。
於一具體實施例中,其可與一或多種前述之具體實施例組合,型式A的層及型式B的層形成一個序列(period),且該塗布系統為具有多個如此之序列的塗布系統。
於一具體實施例中,其可與一或多種前述之具體實施例組合,該塗布系統包括另一種層,具體而言該其他層形成功能層。比方說,該其他層作為黏著層,更具體而言係直接沉積於基材上,且具體來說係在型式A之第一層的正下方;或者,比方說,該其他層作為頂層,即,該層係作為最後層沉積,具體來說為裝飾性頂層。
如本發明之工件包括一種如本發明之塗布系統。該工件以如此之方式受惠於該塗布系統之優點。
於一具體實施例中(其實際上為多種可能具體實施例之列舉),該工件為由下列所組成之群組之至少一種:工具、工具機、研磨機、切削工具、車削工具、捲繞工具、螺紋刀具、絞刀、端銑刀、鑽頭、切削嵌入物、切齒刀具、嵌入物、滾齒刀、清除工具、車削及研磨用嵌入物。
於一具體實施例中,其可與一或多種前述之具體實施例組合(且其實際上為多種可能具體實施例之列舉),該工件具有實質上由下列所組成之群組之至少一種所製成的本體:鐵質金屬、非鐵質金屬、複合材料、黏結碳化物、金屬陶瓷、立方晶系氮化硼、陶瓷材料、鋼、高速鋼。
於一態樣,本發明包括一種製造塗布工件之方法,更具體來說,一種PVD(物理氣相沉積)製程,其可合成塗布系統,更具體來說如本發明之塗布系統,不僅在分離的沉積製程,亦在單一沉積製程。
該製造塗布工件之方法包括下列步驟:
a)在該工件上沉積至少一層型式A的層;及
b)在該工件上沉積至少一層不同於該型式A之型式B的層;其中-該至少一層型式A的層係使用型式X之nX
標靶沉積;及-該至少一層型式B的層係使用不同於該型式X之型式Y之nY
標靶,並同時使用該X之nxy
標靶沉積;其中nX
、nY
及nXy
為之整數,及該型式X之該標靶之至少一種在步驟a)及步驟b)期間皆為活性。以此方式,可實現顯著的降低沉積次數。一或多種標靶可在沉積型式B的層及沉積型式A的層期間皆為活性。此在製程穩定性上亦為有利。沉積可在短時間內進行,且沉積步驟可同樣在真空室進行而無須打破真空。
於一具體實施例中,施用。
於一具體實施例中,施用nX
=nXy
。於此情形,所有在該至少一層型式A的層之沉積期間為活性之型式X的標靶,在沉積至少一層型式B的層之沉積期間亦為活性。
於一方法的具體實施例中,其可與前述之一或多種具體實施例組合,型式A的層實質上係由(Aly
Cr1-y
)X組成,其中X表示由下列所組成之群組中所選出的一種:N、CN、BN、NO、CNO、CBN、BNO及CNBO,y表示金屬相部分之計量組成;及型式B的層實質上係由(Alu
Cr1-u-v-w
Siv
Mew
)X所組成,其中X表示由下列所組成之群組中所選出的一種:N、CN、BN、NO、CNO、CBN、BNO及CNBO,而其中Me表示由下列所組成之群組中所選出的一種W、Nb、Mo、Ta及此群組中之二者或以上之成分的混合物,u、v及w表示金屬相部分之計量組成。
於一方法的具體實施例中,其可與前述之一或多種具體實施例組合,該型式A的層對該型式B的層之後度比率係高於1,具體而言係高於1.5。換言之,步驟a)及b)係以使型式A的層之厚度大於型式B的層之厚度的方式進行,具體來說係大於約1.5倍。
於一方法的具體實施例中,其可與前述之一或多種具體實施例組合,該X型式之標靶包括Al及Cr,及型式Y的標靶包括Al、Cr、Si及提供於該型式B的層的Me。
於一方法的具體實施例中,其可與前述之一或多種具體實施例組合,步驟a)及b)係使用物理氣象沉積製程進行,具體而言係為陰極電弧沉積製程。
於一方法的具體實施例中,其可與前述之一或多種具體實施例組合,該沉積製程的特徵在於沉積溫度<650℃,且較佳為在約500℃或以下,及/或在於反應性氣體環境主要包括N,及/或在於總氣壓位於0.5及10Pa之間,較佳>2Pa,及/或在於40及200V之間的偏電壓,及/或在於該偏電壓在沉積該多層結構中至少一層型式A的層期間,係低於沉積該多層結構中至少一層型式B的層期間者。
本發明包括具相對應之如本發明之塗布系統及工件之特徵的方法,且反之亦然。
該方法之優點對應於相對應之塗布系統及工件的優點,且反之亦然。
進一步的具體實施例及優點揭示於申請專利範圍獨立項及圖示。
下面,本發明藉由實例及含括的圖式更詳細的說明。
圖示中使用之元件符號及其意義節錄於元件符號表中。所述具體實施例係作為實例並不應限制本發明。
下面,本發明將以一些應用實例做更仔細的解釋。
如上所述,本發明之可能目標之一為對非常廣範圍之應用提供一種顯示極佳的保護性磨耗抗性之塗布系統(或簡稱為“塗布”)。為了展現如本發明之塗布超出先前技藝之塗布的優越性,我們首先藉由說明他們是如何製造的,來介紹數種先前技藝之塗布以及數種如本發明之不同的塗布。
接著,我們將討論具有高度不同的切削條件之不同的應用實例之代表性應用,例如,比方說軟、退火或硬化材料之鑽孔或研磨,並討論與先前技藝之塗布相比,如本發明之塗布的性能。
下面所有的塗布係在電弧沉積設備中使用陰極電弧沉積而被合成。工件係被置入適當的電弧沉積設備之室(真空室)中。在如此的塗布設備中,所使用之標靶,比方說,係示於表1者。
表1替六個樣本(塗布)的每一個指示了所使用之標靶的元素組成(以原子百分比)以及各沉積層之元素組成。最後,表1顯示了四個不同應用(appl 1至appl 4)之應用測試的結果。
層厚度係在磨耗保護性塗布的通常厚度範圍內。塗布系統的總厚度通常將不超出約20μm。
樣本編號1、2及3係技藝界已知之塗布。
先前技藝塗布編號1,如表1所示,敘述以六個相同之具70% Al及30% Cr之AlCr標靶沉積的AlCrN之單層。沉積係在純N2
環境中、在3.5Pa之氣壓及-40至-100V之偏電壓、在500℃、於基材進行。
先前技藝塗布編號2係不同於實例編號1,使用四個AlCr標靶及二個TiSi標靶進行。標靶之組成示於表1。沉積係在純N2
環境中、在3.5Pa之氣壓及-40之偏電壓、在約500°C、於基材進行。先前技藝塗布編號2係合成為具有AlCrN之底層、接著10層捆(AlCrN、TiSiN、AlCrTiSiN)及TiSiN頂層之多層塗布。
先前技藝塗布編號3係使用具有在表1對應行中所提到的組成之四個AlCrSiW標靶及二個TiAl標靶沉積。首先,沉積TiAlN撐體層,其接著為AlCrSiWN主層。主層及撐體層之間厚度的關係係在1:2.5之範圍。沉積係在純N2
環境中、在3.5Pa之氣壓及-40至-100V之偏電壓、在約600℃、於基材進行。
塗布編號4、5及6之沉積係在氮氣環境中、於500℃之沉積溫度及4Pa之總氣壓,使用如表1所示之各標靶組成進行。三種塗布全部包括第一層(亦稱為“層I”或型式A的層或層A)及第二層(亦稱為“層II”或型式B的層或層B)。
塗布編號4為依據本發明之第一具體實施例的塗布。此處,對第一層使用具有如表1於X標靶欄所示的組成之四個AlCr
標靶,同時對樣本施加介於-40V至-100V之偏電壓。此可為定值或可被改變。對第二層使用該四個AlCr標靶以及額外的具有如表1於Y標靶欄所示之組成的二個AlCrSiW標靶,同時對樣本施加較高的-100V至-200V之偏電壓。在沉積第二層期間偏電壓的絕對值為高於第一層的沉積期間之偏電壓至少50V,或較佳為100V。所產生的Al之濃度以及所選擇的偏電壓會導致第二層中六方晶相之部分,如同先前於本發明之一特定具體實施例所敘述的,第二層(層B,更精確來說為型式B的層)包括至少二種結晶相(通常為立方晶相及六方晶相)。
塗布5為依據本發明第二具體實施例之塗布。相較於塗布編號4,其具有較高的鎢含量,同時旅含量並未大幅增加且仍保持在剛好60%之上(參見表1)。
相對於此,塗布編號6顯示了60%或以下之鋁百分比。未使用鎢,即,標靶不含鎢,參見表1。於此組態中,未實現六方晶相部分。
表1之最後四欄顯示不同的應用測試之結果。
工件(待研磨):DIN 1.2344(45 HRC)
切削工具:4-槽端銑刀,Φ10mm,微晶碳化物級
切削速度:120mmin-1
進料速率:0.1mm/tooth
切削徑向深度:0.5mm
切削軸向深度:10mm
冷卻劑:潤滑劑6%乳液
研磨操作:側銑(side milling)
單次操作長度:15m
壽命終點:每單次操作後磨耗測量:壽命終點之基準:在單次操作之終點vbmax
>120μm
工件(待研磨):DIN 1.1191(190 HB)
切削工具(經塗布):4-槽端銑刀、Φ10mm、微晶碳化物級
切削速度:400mmin-1
進料速率:0.2mm/tooth
切削徑向深度:0.5mm
切削軸向深度:10mm
冷卻劑:乾式切削
研磨操作:側銑
單次操作長度:50m
壽命終點:每單次操作後磨耗測量:壽命終點之基準:在單次操作之終點vbmax
>120μm
工件(待研磨):DIN GGG50
切削工具(經塗布):2-槽鑽頭、Φ6mm、微晶碳化物級
切削速度:120mmin-1
進料速率:0.25mm/tooth
切削深度:6 x直徑
冷卻劑:內部冷卻-潤滑劑6%乳液
研磨操作:鑽孔
單次操作長度:200孔
壽命終點:每單次操作後磨耗測量:壽命終點之基準:在單次操作終點vbmax
>250μm
工件(待研磨):DIN 1.2344(52 HRC)
切削工具(經塗布):2-槽球端端銑刀、Φ10mm、微晶碳化物級
切削速度:147mmin-1
進料速率:0.15mm/tooth
切削徑向深度:4mm
切削軸向深度:0.8mm
冷卻劑:壓縮空氣
研磨操作:側銑
單次操作長度:15m
壽命終點:每單次操作後磨耗測量:壽命終點之基準:在單次操作終點vbmax
>200um
vbmax
表示,如本技藝中所常見的,最大允許的刀腹磨耗(flank wear)。
如表1的最後四欄可見,塗布4及5在所有四個應用測試中顯示了最佳及次佳的結果。因此,此等塗布不僅可用於廣範圍之應用,亦可沉積在各種的工件上。
此外,如表1中關於第一應用測試、第三測試及第四測試之欄位所示,非先前技藝之塗布提供了相較於先前技藝之塗布明顯較佳的結果。
值得一提的是,製備塗布編號4及5所需要的塗布時間(也就是270min)係明顯低於製備塗布編號2(340min)及編號3(410min)所需的時間,並剛好在塗布編號1之塗布時間的範圍內(也就是240min)。這基本上是因為對第二層(層B,於表1中稱為層II)同時進行不同標靶之使用。標靶X在整個沉積製程(至少在沉積層I(層A)或層II(層B)期間)中可為活性的,而(除了標靶X以外)標靶Y僅在沉積層II(層B)時為活性的。
第1圖顯示SEM(掃描電子顯微鏡)影像,表示出依據本發明之具體實施例的塗層結構。如同所能見到的,第1圖中之塗布系統的總厚度為約3μm,且層A對層B之厚度比率為約2。
第2圖顯示型式A及型式B之單層個別的XRD(X射線繞射)圖案。六方晶相顯示具較低強度的峰,但較高的平均指出六方晶體顆粒之較低的晶粒尺寸。
第3圖顯示例示組態之真空沉積室之圖解細節之上視圖。指示出六個標靶,二個Y型式及四個X型式。待塗布之工件係位於由圓圈及圓形箭頭之符號所表示之樣品運輸帶上。六個工件係以矩形予以圖解顯示。如此之組態係適於製造塗布,例如前面所討論之塗布編號4、5或6。
第4圖顯示,與第3圖相似,例示組態之真空沉積室之圖解細節之上視圖。
第5圖顯示塗布系統的層結構。該塗布系統由沉積於基材(第5圖中墊底者)上之型式A的層及沉積於該型式A的層上的型式B的層所組成,如前面所討論之塗布編號4、5及6之情形(參照表1)。亦注意層A係厚於層B。於沉積層A時,X型式之標靶係被活化,而在沉積層B時,該型式X的標靶及Y型式的標靶係被活化,亦參照第3及4圖。此外,當使用X及Y二種型式之標靶時,亦可能沉積第三型式之層,也就是C型式之層,其係單獨使用Y型式之一或多種標靶。這樣的層可以,比方說,配置在層A及基材之間,像這樣形成,比方說黏著層,或者其可沉積在層B的上面,像這樣形成頂層,比方說裝飾性頂層。
第6圖顯示塗布系統的層結構。在此情況,該塗布系統為具有六層之多層系統,係各由三對型式A的層及型式B的層所組成;一層A及一層B形成重複發生的層序列。如第6圖所示,在各層序列中保證層A之厚度大於層B之厚度係可能的。
第7圖顯示塗布系統的層結構。在此情況,於基材上提供三層。一層B係包夾於二層A之間。
第8圖顯示,與第3及4圖相似,例示組態之真空沉積室之圖解細節之上視圖。在此情形,提供了三種型式的標靶:X型式、Y型式、Z型式。當至少部分連續的使用二種或三種全部型式的標靶時,此可沉積三種不同層型式或甚至四種不同層形式。亦考慮單獨使用各標靶型式,其係可能沉積最高達七種不同層型式;並考慮活化及去活化同一型式之一或多種標靶,可沉積還要更多的不同層型式。
於一簡單的情況,如第8圖所示之組態可用於沉積如第9圖中所示的塗布系統。
第9圖顯示塗布系統的層結構,包括額外的頂層(比方說裝飾性頂層),其可於如第8圖所示之真空沉積室組態中沉積。比方說,於沉積層A時僅活化標靶X;於沉積層B時活化標靶X及標靶Y;及沉積層D時,比方說僅活化標靶Z,或者標靶Z與另外一或二種標靶型式之一或多種標靶的一些組合。
第1圖 SEM(掃描電子顯微鏡)影像顯示如本發明之具體實施例的塗層的結構;
第2圖 型式A及型式B之單層個別的XRD(X射線繞射)圖案;
第3圖 例示組態之真空沉積室之圖解細節的上視圖;
第4圖 例示組態之真空沉積室之圖解細節的上視圖;
第5圖 塗布系統的層結構;
第6圖 塗布系統的層結構;
第7圖 塗布系統的層結構;
第8圖 例示組態之真空沉積室之圖解細節的上視圖;
第9圖 塗布系統的層結構,包括額外的頂層(比方說,裝飾性頂層),其可在如第8圖所示之真空沉積室中沉積。
Claims (25)
- 一種塗布系統,其包括:- 至少一層型式A的層,型式A的層係實質上由(Aly Cr1-y )X所組成,其中X表示由下列所組成之群組中所選出的一種:N、CN、BN、NO、CNO、CBN、BNO及CNBO;y表示金屬相部分之計量組成;- 至少一層型式B的層,型式B的層係實質上由(Alu Cr1-u-v-w Siv Mew )X所組成,其中X表示由下列所組成之群組中所選出的一種:N、CN、BN、NO、CNO、CBN、BNO及CNBO;及其中Me表示由下列所組成之群組中所選出來之一種:W、Nb、Mo、Ta及此群組中之二者或以上之成分的混合物;u、v及w表示金屬相部分之計量組成;其中,該型式A的層對該型式B的層之厚度比率係高於1。
- 如申請專利範圍第1項之塗布系統,其中該厚度比率係高於約1.5。
- 如申請專利範圍第1或2項之塗布系統,其中該至少一層型式B的層係包括至少二結晶相。
- 如申請專利範圍第1或2項之塗布系統,其中該至少一層型式B的層係包括立方晶相及六方晶相。
- 如申請專利範圍第4項之塗布系統,其中該六方晶相的該至少一層型式B的層之含量係小於該至少一層型式B的層的50vol.%。
- 如申請專利範圍第4項之塗布系統,其中該六方晶相的該至少一層型式B的層之含量係大於該至少一層型式B的層的5vol.%,且小於該至少一層型式B的層的40vol.%。
- 如申請專利範圍第1或2項之塗布系統,其中該至少一層型式A的層係實質上為立方晶體結構。
- 如申請專利範圍第1或2項之塗布系統,其中0.5<y<0.7。
- 如申請專利範圍第1或2項之塗布系統,其中0.5<u<0.7及0.01<v<0.15及0.002<w<0.1,具體而言w<0.05。
- 如申請專利範圍第1或2項之塗布系統,其中該至少一層型式B的層係直接沉積在該至少一層型式A的層上。
- 如申請專利範圍第1或2項之塗布系統,其包括包夾在型式A的第一層與型式A的第二層間的型式B的層。
- 如申請專利範圍第1或2項之塗布系統,其包括多層序列(multiple layer periods),其中此層序列之一係由一型式A的層及型式B的層所形成。
- 一種工件,其包括如申請專利範圍第1至12項中任一項之塗布系統。
- 如申請專利範圍第13項之工件,其中該工件係由下列所組成之群組中所選出的至少一種:- 工具(tool);- 工具機(machining tool); - 研磨機(milling tool);- 切削工具(cutting tool);- 車削工具(turning tool);- 捲繞工具(tapping tool);- 螺紋刀具(threading tool);- 絞刀(reamer);- 端銑刀(end mill);- 鑽頭(drill);- 切削嵌入物(cutting insert);- 切齒刀具(gear cutting tool);- 嵌入物(insert);- 滾齒刀(hob);- 清除工具(clearing tool);- 車削及研磨用嵌入物(insert for turning and milling)。
- 如申請專利範圍第13或14項之工件,其中該工件具有實質上由下列所組成之群組之至少一種所製成的本體:- 鐵質金屬;- 非鐵質金屬;- 複合材料;- 黏結碳化物;- 金屬陶瓷;- 立方晶系氮化硼;- 陶瓷材料;- 鋼; - 高速鋼。
- 一種製造塗布工件之方法,其包括下列步驟:a)於該工件上沉積至少一層型式A的層;及b)於該工件上沉積至少一層不同於該型式A之型式B的層;其中- 該至少一層型式A的層係使用型式X之nX 標靶沉積;及- 該至少一層型式B的層係使用不同於該型式X之型式Y的nY 標靶,並同時使用該型式X的nXy 標靶沉積;其中nX 、nY 、及nXy 係1之整數,及該型式X之至少一標靶係在步驟a)及步驟b)期間皆為活性。
- 如申請專利範圍第16項之方法,其中- 型式A之層係實質上由(Aly Cr1-y )X組成,其中X表示由下列所組成之群組中所選出之一種:N、CN、BN、NO、CNO、CBN、BNO及CNBO;y表示金屬相部分之計量組成;及- 型式B的層係實質上由(Alu Cr1-u-v-w Siv Mew )X所組成,其中X表示由下列所組成之群組中所選出的一種:N、CN、BN、NO、CNO、CBN、BNO及CNBO;及其中Me表示由下列所組成之群組中所選出來之一種:W、Nb、Mo、Ta及此群組中之二者或以上之成分的混合物;u、v及w表示金屬相部分之計量組成。
- 如申請專利範圍第17之方法,其中該型式A的層對該型式B的層之厚度比率係高於1,具體而言係高於約1.5。
- 如申請專利範圍第17或18項之方法,其中該型式X之標靶包括Al及Cr,及型式Y的標靶包括Al、Cr、Si及提供在該型式B的層中的Me。
- 如申請專利範圍第16至18項中任一項之方法,其中步驟a)及b)係使用物理氣相沉積法進行,具體而言為陰極電弧沉積法。
- 如申請專利範圍第16至18中任一項之方法,其中包括在進行步驟a)及b)期間保持該工件在低於約650℃之溫度,具體而言係在低於約500℃之溫度。
- 如申請專利範圍第16至18中任一項之方法,其中包括在進行步驟a)及b)期間,將該工件暴露於總氣壓介於0.5Pa及10Pa之間之反應性氣體環境,具體而言係大於2Pa。
- 如申請專利範圍第22項之方法,其中該反應性氣體環境主要包括N。
- 如申請專利範圍第16至18項中任一項之方法,其中包括在進行步驟a)及b)期間施加介於40V及200V之偏電壓至該工件。
- 如申請專利範圍第16至18項中任一項之方法,其中包括在進行步驟a)施加偏電壓至該工件,及在進行步驟b)期間施加較低的偏電壓至該工件。
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- 2009-07-07 TW TW098122900A patent/TWI450998B/zh not_active IP Right Cessation
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WO2006005217A2 (en) * | 2004-07-15 | 2006-01-19 | Oc Oerlikon Balzers Ag | Highly oxidation resistant hard coating for cutting tools |
WO2006084404A1 (en) * | 2005-02-10 | 2006-08-17 | Oerlikon Trading Ag, Trübbach | High wear resistant triplex coating for cutting tools |
WO2008037556A2 (en) * | 2006-09-26 | 2008-04-03 | Oerlikon Trading Ag, Truebbach | Workpiece with hard coating |
Also Published As
Publication number | Publication date |
---|---|
KR101699557B1 (ko) | 2017-01-24 |
ES2658849T3 (es) | 2018-03-12 |
BRPI0915451A2 (pt) | 2017-06-27 |
PT2310549T (pt) | 2018-02-08 |
JP2011527383A (ja) | 2011-10-27 |
BRPI0915451B1 (pt) | 2019-10-22 |
MX2011000331A (es) | 2011-06-20 |
US20110111193A1 (en) | 2011-05-12 |
WO2010003902A1 (en) | 2010-01-14 |
HUE038152T2 (hu) | 2018-09-28 |
TW201033390A (en) | 2010-09-16 |
JP5640004B2 (ja) | 2014-12-10 |
PL2310549T3 (pl) | 2018-06-29 |
CN102149844B (zh) | 2014-05-14 |
US8491989B2 (en) | 2013-07-23 |
KR20110033248A (ko) | 2011-03-30 |
EP2310549B1 (en) | 2017-12-06 |
RU2011104495A (ru) | 2012-08-20 |
RU2528930C2 (ru) | 2014-09-20 |
CN102149844A (zh) | 2011-08-10 |
EP2310549A1 (en) | 2011-04-20 |
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