JP2011527383A - コーティングシステム、コーティングされたワークピースおよびその製造方法 - Google Patents
コーティングシステム、コーティングされたワークピースおよびその製造方法 Download PDFInfo
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Abstract
Description
a)上記ワークピースに少なくとも1つのタイプA層を堆積するステップと、
b)上記ワークピースに上記タイプAと異なる少なくとも1つのタイプB層を堆積するステップと
を含み、
− 上記少なくとも1つのタイプA層は、タイプXのnxターゲットを用いて堆積され、
− 上記少なくとも1つのタイプB層は、上記タイプXと異なるタイプYのnyターゲットを用いると同時に上記タイプXのnxyターゲットを用いて堆積され、
ここで、nx、ny、およびnxyは、≧1の整数であり、上記タイプXの上記ターゲットの少なくとも1つは、ステップa)およびステップb)の両方の間活性である。このように、大幅に低減された堆積回数が実現され得る。1つまたは複数のターゲットが、タイプB層の堆積およびタイプA層の堆積の両方の間活性であり得る。このことは、プロセス安定性の点においても有利であり得る。堆積は、僅かな時間で実施することができ、堆積ステップは、同じ真空室において真空を破壊することなく実施することができる。
ミリング条件:
ワークピース(ミリング対象):DIN1.2344(45HRC)
切削工具:4溝付きエンドミル、φ10mm、マイクログレインカーバイドグレード
切削速度:120m/min
供給量:0.1mm/tooth
切削の半径方向深さ:0.5mm
切削の軸方向深さ:10mm
冷却剤:潤滑油6%エマルジョン
ミリング操作:サイドミリング
単一通過の長さ:15m
寿命の終わり:それぞれの単一通過の後に摩耗測定:寿命の終わりの基準:単一通過の端部においてVbmax>120μm
ミリング条件:
ワークピース(ミリング対象):DIN1.1191(190HB)
切削工具(コーティングされている):4溝付きエンドミル、φ10mm、マイクログレインカーバイドグレード
切削速度:400m/min
供給量:0.2mm/tooth
切削の半径方向深さ:0.5mm
切削の軸方向深さ:10mm
冷却剤:乾燥切削
ミリング操作:サイドミリング
単一通過の長さ:50m
寿命の終わり:それぞれの単一通過の後に摩耗測定:寿命の終わりの基準:単一通過の端部においてVbmax>120μm
ミリング条件:
ワークピース(ミリング対象):DIN GGG50
切削工具(コーティングされている):2溝付きドリル、φ6mm、マイクログレインカーバイドグレード
切削速度:120m/min
供給量:0.25mm/tooth
切削の深さ:6×直径
冷却剤:内部冷却−潤滑油6%エマルジョン
ミリング操作:ドリル加工
単一通過の長さ:200穴
寿命の終わり:それぞれの単一通過の後に摩耗測定:寿命の終わりの基準:単一通過の端部においてVbmax>250μm
ミリング条件:
ワークピース(ミリング対象):DIN1.2344(52HRC)
切削工具(コーティングされている):2溝付きボールノーズエンドミル、φ10mm、マイクログレインカーバイドグレード
切削速度:147m/min
供給量:0.15mm/tooth
切削の半径方向深さ:4mm
切削の軸方向深さ:0.8mm
冷却剤:圧縮空気
ミリング操作:サイドミリング
単一通過の長さ:15m
寿命の終わり:それぞれの単一通過の後に摩耗測定:寿命の終わりの基準:単一通過の端部においてVbmax>200μm
Claims (25)
- (AlyCr1−y)X(式中、Xは、N、CN、BN、NO、CNO、CBN、BNOおよびCNBOからなる群の1種を表し、yは、金属相部分の化学量論組成を記載する)から実質的になる少なくとも1つのタイプA層と、
(AluCr1−u−v−wSivMew)X(式中、Xは、N、CN、BN、NO、CNO、CBN、BNOおよびCNBOからなる群の1種を表し、Meは、W、Nb、MoおよびTaからなる群の1種または該群の構成要素の2種以上の混合物を表し、u、vおよびwは、金属相部分の化学量論組成を記載する)から実質的になる少なくとも1つのタイプB層と
を含むコーティングシステムであって、前記タイプA層対前記タイプB層の厚さ比が1を超えるコーティングシステム。 - 前記厚さ比が約1.5を超える、請求項1に記載のコーティングシステム。
- 前記少なくとも1つのタイプB層が、少なくとも2つの結晶相を含む、請求項1または請求項2に記載のコーティングシステム。
- 前記少なくとも1つのタイプB層が、立方晶相および六方晶相を含む、請求項1から3のいずれか一項に記載のコーティングシステム。
- 前記少なくとも1つのタイプB層の前記六方晶相の含有量が、前記少なくとも1つのタイプB層の<50体積%である、請求項4に記載のコーティングシステム。
- 前記少なくとも1つのタイプB層の前記六方晶相の含有量が、前記少なくとも1つのタイプB層の>5体積%かつ前記少なくとも1つのタイプB層の<40体積%である、請求項4または請求項5に記載のコーティングシステム。
- 前記少なくとも1つのタイプA層が、立方晶構造から実質的になる、請求項1から6のいずれか一項に記載のコーティングシステム。
- 0.5<y<0.7である、請求項1から7のいずれか一項に記載のコーティングシステム。
- 0.5<u<0.7かつ0.01<v<0.15かつ0.002<w<0.1であり、特にw<0.05である、請求項1から8のいずれか一項に記載のコーティングシステム。
- 前記少なくとも1つのタイプB層が、前記少なくとも1つのタイプA層上に直接堆積されている、請求項1から9のいずれか一項に記載のコーティングシステム。
- 第1のタイプA層と第2のタイプA層との間に挟持されているタイプB層を含む、請求項1から10のいずれか一項に記載のコーティングシステム。
- 複数の層周期を含み、1つのこのような層周期が、1つのタイプA層および1つのタイプB層によって形成されている、請求項1から11のいずれか一項に記載のコーティングシステム。
- 請求項1から12のいずれか一項に記載のコーティングシステムを含むワークピース。
- −工具、
−機械加工工具、
−ミリング工具、
−切削工具、
−旋削工具、
−タップ切り工具、
−ねじ切り工具、
−リーマー、
−エンドミル、
−ドリル、
−切削インサート、
−ギア切削工具、
−インサート、
−ホブ、
−除去工具、
−旋削用およびミリング用インサート
からなる群の少なくとも1種である、請求項13に記載のワークピース。 - −鉄を含む金属、
−非鉄金属、
−複合材料、
−超硬合金、
−サーメット、
−立方晶窒化ホウ素、
−セラミック材料、
−鋼、
−高速度鋼
からなる群の少なくとも1種から実質的にできている本体を有する、請求項13または請求項14に記載のワークピース。 - コーティングされたワークピースを製造する方法であって、
a)前記ワークピースに少なくとも1つのタイプA層を堆積するステップと、
b)前記ワークピースに前記タイプAと異なる少なくとも1つのタイプB層を堆積するステップと
を含み、
−前記少なくとも1つのタイプA層は、タイプXのnxターゲットを用いて堆積され、
−前記少なくとも1つのタイプB層は、前記タイプXと異なるタイプYのnyターゲットを用いると同時に前記タイプXのnxyターゲットを用いて堆積され、
ここで、nx、ny、およびnxyは、≧1の整数であり、前記タイプXの前記ターゲットの少なくとも1つは、ステップa)およびステップb)の両方の間活性である、方法。 - −タイプA層が、(AlyCr1−y)X(式中、Xは、N、CN、BN、NO、CNO、CBN、BNOおよびCNBOからなる群の1種を表し、yは、金属相部分の化学量論組成を記載する)から実質的になり、
−タイプB層が、(AluCr1−u−v−wSivMew)X(式中、Xは、N、CN、BN、NO、CNO、CBN、BNOおよびCNBOからなる群の1種を表し、Meは、W、Nb、MoおよびTaからなる群の1種または該群の構成要素の2種以上の混合物を表し、u、vおよびwは、金属相部分の化学量論組成を記載する)から実質的になる、請求項16に記載の方法。 - 前記タイプA層対前記タイプB層の厚さ比が、1を超え、特に約1.5を超える、請求項17に記載の方法。
- 前記タイプXのターゲットが、AlおよびCrを含み、タイプYのターゲットが、前記タイプB層に設けられているAl、Cr、Siおよび前記Meを含む、請求項17または請求項18に記載の方法。
- ステップa)およびb)が、物理蒸着法、特に陰極アーク蒸発法を用いて実施される、請求項16から19のいずれか一項に記載の方法。
- ステップa)およびb)を実施する間、前記ワークピースを約650℃未満、特に約500℃以下の温度に保持するステップを含む、請求項16から20のいずれか一項に記載の方法。
- ステップa)およびb)を実施する間、前記ワークピースを全ガス圧が0.5Paから10Paの間、好ましくは>2Paである反応性ガス雰囲気に曝すステップを含む、請求項16から21のいずれか一項に記載の方法。
- 前記反応性ガス雰囲気が主にNを含む、請求項23に記載の方法。
- ステップa)およびb)を実施する間、40Vから200Vの間のバイアス電圧を前記ワークピースに印加するステップを含む、請求項16から23のいずれか一項に記載の方法。
- ステップa)を実施する間、バイアス電圧を前記ワークピースに印加するステップ、およびステップb)を実施する間、より低いバイアス電圧を前記ワークピースに印加するステップを含む、請求項16から24のいずれか一項に記載の方法。
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