TWI448416B - Method for making linear heater - Google Patents
Method for making linear heater Download PDFInfo
- Publication number
- TWI448416B TWI448416B TW097128284A TW97128284A TWI448416B TW I448416 B TWI448416 B TW I448416B TW 097128284 A TW097128284 A TW 097128284A TW 97128284 A TW97128284 A TW 97128284A TW I448416 B TWI448416 B TW I448416B
- Authority
- TW
- Taiwan
- Prior art keywords
- carbon nanotube
- preparing
- carbon
- heat source
- line heat
- Prior art date
Links
Description
本發明涉及一種線熱源的製備方法，尤其涉及一種基於奈米碳管的線熱源的製備方法。 The invention relates to a method for preparing a line heat source, in particular to a method for preparing a line heat source based on a carbon nanotube.
請參見圖1，先前技術提供一種線熱源10，其包括一中空圓柱狀支架102；一加熱層104設置於該支架102表面，一絕緣保護層106設置於該加熱層104表面；兩個電極110分別設置於支架102兩端，且與加熱層104電連接；兩個夾緊件108分別將兩個電極110與加熱層104卡固於支架102兩端。其中，加熱層104通常採用一碳纖維紙通過纏繞或包裹的方式形成。 Referring to FIG. 1 , the prior art provides a line heat source 10 including a hollow cylindrical bracket 102; a heating layer 104 is disposed on the surface of the bracket 102, and an insulating protective layer 106 is disposed on the surface of the heating layer 104; They are respectively disposed at two ends of the bracket 102 and electrically connected to the heating layer 104; the two clamping members 108 respectively fix the two electrodes 110 and the heating layer 104 to both ends of the bracket 102. Wherein, the heating layer 104 is usually formed by winding or wrapping a carbon fiber paper.
所述碳纖維紙的製備方法包括以下步驟：把合成纖維或纖維素纖維切成3~6毫米的短纖維；按比例稱重瀝青基碳纖維及紙基材，並倒入打漿池中，再加入水，使紙漿濃度為0.5~0.8%，進行打漿，使碳纖維及紙基材全部溶散開，打漿一般為2~4小時，溫度控制於25~40℃；於紙漿中加入0.2~2%的松香，加入2~6%的聚乙烯醇，並充分攪拌，均勻混合；採用先前的造紙工藝進行抄紙，並烘乾收卷。 The method for preparing the carbon fiber paper comprises the steps of: cutting the synthetic fiber or the cellulose fiber into short fibers of 3 to 6 mm; weighing the pitch-based carbon fiber and the paper substrate in proportion, pouring into the beating pool, and adding water; The pulp concentration is 0.5~0.8%, and the beating is performed to dissolve all the carbon fiber and the paper substrate. The beating is generally 2 to 4 hours, the temperature is controlled at 25 to 40 ° C, and 0.2 to 2% of rosin is added to the pulp. Add 2~6% of polyvinyl alcohol, mix well and mix evenly; use the previous papermaking process to make paper and dry and wind up.
然而，先前技術製備線熱源的方法具有以下不足：第一，加熱層採用碳纖維紙，碳纖維紙的製備工藝複雜，且需要先前的造紙工藝使用的紙基材，成本較高。第二，採用造紙工藝製備的碳纖維 紙厚度較大，故，採用該方法無法製備微型線熱源。 However, the prior art method for preparing a line heat source has the following disadvantages: First, the heating layer is made of carbon fiber paper, the preparation process of the carbon fiber paper is complicated, and the paper substrate used in the previous papermaking process is required, and the cost is high. Second, carbon fiber prepared by papermaking process The paper has a large thickness, so the microwire heat source cannot be prepared by this method.
有鑒於此，提供一種工藝簡單，成本低廉，且可用於製備微型線熱源的線熱源的製備方法實為必要。 In view of this, it is necessary to provide a method for preparing a line heat source which is simple in process, low in cost, and can be used for preparing a microwire heat source.
一種線熱源的製備方法，其具體包括以下步驟：提供一線狀基底；製備一奈米碳管結構；將該奈米碳管結構設置於所述線狀基底的表面作為加熱層；及間隔形成兩個電極於該線狀基底兩端且位於該奈米碳管結構之表面，該兩個電極與該奈米碳管結構形成電連接。 A method for preparing a line heat source, comprising the steps of: providing a linear substrate; preparing a carbon nanotube structure; disposing the carbon nanotube structure on a surface of the linear substrate as a heating layer; Electrodes are disposed at both ends of the linear substrate and on the surface of the carbon nanotube structure, and the two electrodes are electrically connected to the carbon nanotube structure.
相較於先前技術，本技術方案實施例所提供的線熱源的製備方法工藝簡單，成本低廉，可用於製備微型線熱源，且該方法製備的線熱源具有以下優點：第一，奈米碳管的直徑較小，使得奈米碳管層具有較小的厚度，可製備微型線熱源，應用於微型器件的加熱。第二，奈米碳管比碳纖維具有更小的密度，故，採用奈米碳管層的線熱源具有更輕的重量，使用方便。第三，所述的奈米碳管層具有較低的電阻，且奈米碳管的電熱轉換效率高，熱阻率低，故，該線熱源具有升溫迅速、熱滯後小、熱交換速度快的特點。 Compared with the prior art, the method for preparing a line heat source provided by the embodiments of the present technical solution is simple in process and low in cost, and can be used for preparing a microwire heat source, and the line heat source prepared by the method has the following advantages: first, a carbon nanotube The smaller diameter allows the carbon nanotube layer to have a smaller thickness, and a microwire heat source can be prepared for heating of the micro device. Second, the carbon nanotubes have a smaller density than the carbon fibers. Therefore, the line heat source using the carbon nanotube layer has a lighter weight and is convenient to use. Third, the carbon nanotube layer has a low electrical resistance, and the carbon nanotube has high electrothermal conversion efficiency and low thermal resistance. Therefore, the line heat source has rapid temperature rise, small thermal hysteresis, and fast heat exchange rate. specialty.
10,20‧‧‧線熱源 10,20‧‧‧Wire heat source
102‧‧‧支架 102‧‧‧ bracket
104,204‧‧‧加熱層 104,204‧‧‧heating layer
106‧‧‧保護層 106‧‧‧Protective layer
108‧‧‧夾緊件 108‧‧‧Clamping parts
110,206‧‧‧電極 110,206‧‧‧ electrodes
202‧‧‧線狀基底 202‧‧‧Linear substrate
208‧‧‧絕緣保護層 208‧‧‧Insulating protective layer
210‧‧‧反射層 210‧‧‧reflective layer
圖1為先前技術的線熱源的結構示意圖。 1 is a schematic structural view of a prior art line heat source.
圖2為本技術方案實施例製備的線熱源的結構示意圖。 2 is a schematic structural view of a line heat source prepared according to an embodiment of the present technical solution.
圖3為圖2的線熱源沿線Ⅲ-Ⅲ的剖面示意圖。 3 is a schematic cross-sectional view of the line heat source of FIG. 2 taken along line III-III.
圖4為本技術方案實施例的線熱源的製備方法流程圖。 4 is a flow chart of a method for preparing a line heat source according to an embodiment of the present technical solution.
圖5為本技術方案實施例的奈米碳管有序膜的掃描電鏡照片。 FIG. 5 is a scanning electron micrograph of an ordered film of a carbon nanotube according to an embodiment of the present technical solution.
圖6為本技術方案實施例的束狀結構的奈米碳管長線的掃描電鏡照片。 FIG. 6 is a scanning electron micrograph of a long carbon nanotube tube of a bundle structure according to an embodiment of the present technology.
圖7為本技術方案實施例的絞線結構的奈米碳管長線的掃描電鏡照片。 FIG. 7 is a scanning electron micrograph of a long carbon nanotube line of a stranded wire structure according to an embodiment of the present technical solution.
圖8為本技術方案實施例的奈米碳管沿同一方向擇優取向排列的奈米碳管碾壓膜的掃描電鏡照片。 FIG. 8 is a scanning electron micrograph of a carbon nanotube film laminated in a preferred orientation of the carbon nanotubes in the same direction according to an embodiment of the present invention.
圖9為本技術方案實施例奈米碳管沿不同方向擇優取向排列的奈米碳管碾壓膜的掃描電鏡照片。 FIG. 9 is a scanning electron micrograph of a carbon nanotube film laminated in a preferred orientation of carbon nanotubes in different directions according to an embodiment of the present invention.
圖10為本技術方案實施例的奈米碳管絮狀結構的照片。 Figure 10 is a photograph of a carbon nanotube floc structure of an embodiment of the present technology.
圖11為本技術方案實施例的奈米碳管絮化膜的照片。 Figure 11 is a photograph of a carbon nanotube film of the embodiment of the present invention.
圖12為本技術方案實施例的奈米碳管絮化膜的掃描電鏡照片。 FIG. 12 is a scanning electron micrograph of a carbon nanotube flocculation film according to an embodiment of the present technology.
以下將結合附圖詳細說明本技術方案提供的線熱源的製備方法。 Hereinafter, a method for preparing a line heat source provided by the present technical solution will be described in detail with reference to the accompanying drawings.
請參見圖2及圖3，本技術方案實施例提供一種線熱源20，其包括一線狀基底202；一反射層210設置於該線狀基底202的表面；一奈米碳管結構204設置於所述反射層210表面；兩個電極206間隔設置於該一奈米碳管結構204的表面，且與該一奈米碳管結構204形成電連接；及一絕緣保護層208設置於該一奈米碳管結構204的外表面。所述線熱源20的長度不限，直徑為0.1微米~1.5厘米。本實施例的線熱源20的直徑優選為1.1毫米~1.1厘米。 Referring to FIG. 2 and FIG. 3, the embodiment of the present invention provides a line heat source 20 including a linear substrate 202. A reflective layer 210 is disposed on the surface of the linear substrate 202. A carbon nanotube structure 204 is disposed at the surface. The surface of the reflective layer 210 is disposed on the surface of the carbon nanotube structure 204 and electrically connected to the carbon nanotube structure 204; and an insulating protective layer 208 is disposed on the nanometer. The outer surface of the carbon tube structure 204. The length of the line heat source 20 is not limited, and the diameter is from 0.1 micrometer to 1.5 centimeters. The diameter of the line heat source 20 of the present embodiment is preferably 1.1 mm to 1.1 cm.
請參閱圖4，本技術方案第一實施例提供一種線熱源20的製備方 法，其主要包括以下步驟： Referring to FIG. 4, a first embodiment of the present technical solution provides a preparation method of a line heat source 20. The law mainly includes the following steps:
步驟一，提供一線狀基底202。 In step one, a linear substrate 202 is provided.
所述線狀基底202用於支撐奈米碳管結構204，其材料可為硬性材料，如：陶瓷、玻璃、樹脂、石英等，亦可選擇柔性材料，如：塑膠或柔性纖維等，用以使該線熱源20於使用時根據需要彎折成任意形狀。所述線狀基底202的長度、直徑及形狀不限，可依據實際需要進行選擇。可以理解，所述線狀基底202的材料並不限於上述列舉的材料，只要具有一定耐熱性能的絕緣材料即可。所述線狀基底202的長度、直徑及形狀不限，可依據實際需要進行選擇。本實施例優選的線狀基底202為一陶瓷桿，其直徑為1毫米~1厘米。 The linear substrate 202 is used for supporting the carbon nanotube structure 204, and the material thereof may be a hard material such as ceramics, glass, resin, quartz, etc., and a flexible material such as plastic or flexible fiber may be selected. The line heat source 20 is bent into an arbitrary shape as needed during use. The length, diameter and shape of the linear substrate 202 are not limited, and may be selected according to actual needs. It can be understood that the material of the linear substrate 202 is not limited to the materials listed above, as long as the insulating material has a certain heat resistance. The length, diameter and shape of the linear substrate 202 are not limited, and may be selected according to actual needs. The preferred linear substrate 202 of this embodiment is a ceramic rod having a diameter of from 1 mm to 1 cm.
步驟二，形成一反射層210於線狀基底202的表面。 In step two, a reflective layer 210 is formed on the surface of the linear substrate 202.
於線狀基底202的表面形成一反射層210可通過塗覆或鍍膜的方法實現。所述反射層210的材料為一白色絕緣材料，如：金屬氧化物、金屬鹽或陶瓷等。本實施例中，反射層210材料優選為三氧化二鋁，其厚度為100微米~0.5毫米。該反射層210用來反射奈米碳管結構204所發的熱量，使其有效的散發到外界空間去。可以理解，本實施例提供的線熱源20中反射層210為一可選結構，故，該步驟二也為一可選步驟。 Forming a reflective layer 210 on the surface of the linear substrate 202 can be achieved by a coating or coating method. The material of the reflective layer 210 is a white insulating material such as a metal oxide, a metal salt or a ceramic. In this embodiment, the material of the reflective layer 210 is preferably aluminum oxide, and the thickness thereof is 100 micrometers to 0.5 millimeters. The reflective layer 210 is used to reflect the heat generated by the carbon nanotube structure 204 to be effectively radiated to the external space. It can be understood that the reflective layer 210 of the line heat source 20 provided in this embodiment is an optional structure. Therefore, the second step is also an optional step.
步驟三，製備一奈米碳管結構204。 In step three, a carbon nanotube structure 204 is prepared.
所述奈米碳管結構204包括複數個均勻分佈的奈米碳管。該奈米碳管結構204中的奈米碳管有序排列或無序排列。具體的，所述的奈米碳管結構204包括奈米碳管有序膜、奈米碳管長線結構、 奈米碳管碾壓膜或奈米碳管絮化膜等。 The carbon nanotube structure 204 includes a plurality of uniformly distributed carbon nanotubes. The carbon nanotubes in the carbon nanotube structure 204 are ordered or disorderly arranged. Specifically, the carbon nanotube structure 204 includes an ordered film of a carbon nanotube, a long-line structure of a carbon nanotube, Nano carbon tube rolled film or carbon nanotube film.
根據奈米碳管結構204的不同，所述奈米碳管結構204的製備方法包括：直接拉膜法、碾壓法、絮化法等。下面將對上述幾種奈米碳管結構204的製備方法進行分別敍述。 According to the difference of the carbon nanotube structure 204, the preparation method of the carbon nanotube structure 204 includes a direct film drawing method, a rolling method, a flocculation method and the like. The preparation methods of the above several carbon nanotube structures 204 will be separately described below.
(一)採用奈米碳管有序膜的奈米碳管結構204的製備方法，包括以下步驟： (1) A method for preparing a carbon nanotube structure 204 using a carbon nanotube ordered film, comprising the steps of:
首先，提供一奈米碳管陣列形成於一基底，該陣列為超順排的奈米碳管陣列。 First, an array of carbon nanotubes is provided on a substrate that is a super-aligned array of carbon nanotubes.
該奈米碳管陣列的製備方法採用化學氣相沈積法，其具體步驟包括：(a)提供一平整基底，該基底可選用P型或N型矽基底，或選用形成有氧化層的矽基底，本技術方案實施例優選為採用4英寸的矽基底；(b)於基底表面均勻形成一催化劑層，該催化劑層材料可選用鐵(Fe)、鈷(Co)、鎳(Ni)或其任意組合的合金之一；(c)將上述形成有催化劑層的基底於700℃~900℃的空氣中退火約30分鐘~90分鐘；(d)將處理過的基底置於反應爐中，於保護氣體環境下加熱到500℃~740℃，然後通入碳源氣體反應約5分鐘~30分鐘，生長得到奈米碳管陣列。該奈米碳管陣列為複數個彼此平行且垂直於基底生長的奈米碳管形成的純奈米碳管陣列。通過上述控制生長條件，該定向排列的奈米碳管陣列中基本不含有雜質，如無定型碳或殘留的催化劑金屬顆粒等。 The method for preparing the carbon nanotube array adopts a chemical vapor deposition method, and the specific steps thereof include: (a) providing a flat substrate, the substrate may be selected from a P-type or N-type germanium substrate, or a germanium substrate having an oxide layer formed thereon. The embodiment of the technical solution preferably adopts a 4-inch germanium substrate; (b) uniformly forms a catalyst layer on the surface of the substrate, and the catalyst layer material may be selected from iron (Fe), cobalt (Co), nickel (Ni) or any of them. One of the combined alloys; (c) annealing the substrate on which the catalyst layer is formed in air at 700 ° C to 900 ° C for about 30 minutes to 90 minutes; (d) placing the treated substrate in a reaction furnace for protection The gas is heated to 500 ° C ~ 740 ° C, and then the carbon source gas is passed for about 5 minutes to 30 minutes to grow to obtain a carbon nanotube array. The carbon nanotube array is a plurality of pure carbon nanotube arrays formed of carbon nanotubes that are parallel to each other and grown perpendicular to the substrate. The aligned carbon nanotube array contains substantially no impurities, such as amorphous carbon or residual catalyst metal particles, etc., by controlling the growth conditions described above.
本技術方案實施例提供的奈米碳管陣列為單壁奈米碳管陣列、雙壁奈米碳管陣列及多壁奈米碳管陣列中的一種。所述奈米碳管的直徑為1~50奈米，長度大於50微米。本實施例中，奈米碳管的長 度優選為100~900微米。 The carbon nanotube array provided by the embodiments of the present technical solution is one of a single-walled carbon nanotube array, a double-walled carbon nanotube array, and a multi-walled carbon nanotube array. The carbon nanotubes have a diameter of 1 to 50 nanometers and a length of more than 50 micrometers. In this embodiment, the length of the carbon nanotubes The degree is preferably from 100 to 900 μm.
本技術方案實施例中碳源氣可選用乙炔、乙烯、甲烷等化學性質較活潑的碳氫化合物，本技術方案實施例優選的碳源氣為乙炔；保護氣體為氮氣或惰性氣體，本技術方案實施例優選的保護氣體為氬氣。 In the embodiment of the technical solution, the carbon source gas may be a chemically active hydrocarbon such as acetylene, ethylene or methane. The preferred carbon source gas in the embodiment of the technical solution is acetylene; the shielding gas is nitrogen or an inert gas, and the technical solution is The preferred shielding gas for the examples is argon.
可以理解，本技術方案實施例提供的奈米碳管陣列不限於上述製備方法，也可為石墨電極恒流電弧放電沈積法、鐳射蒸發沈積法等。 It can be understood that the carbon nanotube array provided by the embodiments of the present technical solution is not limited to the above preparation method, and may be a graphite electrode constant current arc discharge deposition method, a laser evaporation deposition method, or the like.
其次，採用一拉伸工具從奈米碳管陣列中拉取奈米碳管獲得至少一奈米碳管有序膜。 Next, a stretching tool is used to pull the carbon nanotubes from the carbon nanotube array to obtain at least one carbon nanotube ordered film.
該奈米碳管薄膜的製備過程具體包括以下步驟：該奈米碳管薄膜係從超順排奈米碳管陣列中直接拉取獲得，其製備方法具體包括以下步驟：(a)採用一拉伸工具選取該超順排奈米碳管陣列中的部分奈米碳管，本實施例優選為採用具有一定寬度的膠帶接觸奈米碳管陣列以選定一定寬度的多部分奈米碳管；(b)以一定的速度沿基本垂直於超順排奈米碳管陣列生長方向拉伸該部分奈米碳管，形成一連續的奈米碳管有序膜。 The preparation process of the carbon nanotube film specifically includes the following steps: the carbon nanotube film is directly drawn from the super-sequential carbon nanotube array, and the preparation method thereof comprises the following steps: (a) using a pull Extending the tool to select a portion of the carbon nanotubes in the super-sequential carbon nanotube array. In this embodiment, it is preferred to contact the carbon nanotube array with a tape having a certain width to select a multi-section carbon nanotube of a certain width; b) stretching the portion of the carbon nanotubes at a rate substantially perpendicular to the growth direction of the super-sequential carbon nanotube array to form a continuous ordered carbon nanotube film.
請參見圖5，上述拉伸過程中，在拉力作用下超順排奈米碳管陣列中的部分奈米碳管沿拉伸方向逐漸脫離基底的同時，由於凡德瓦爾力作用，該超順排奈米碳管陣列中的其他奈米碳管首尾相連地連續地被拉出，從而形成一奈米碳管有序膜。該奈米碳管有序膜包括複數個奈米碳管首尾相連且沿拉伸方向定向排列。該奈米碳管有序膜的寬度與超順排奈米碳管陣列的尺寸(直徑/寬度)有 關，該奈米碳管有序膜的厚度與超順排奈米碳管陣列的高度有關。 Referring to FIG. 5, in the above stretching process, a part of the carbon nanotubes in the super-aligned carbon nanotube array under the tension is gradually separated from the substrate in the stretching direction, and the super-shun due to the van der Waals force. The other carbon nanotubes in the array of carbon nanotubes are continuously drawn end to end to form an ordered membrane of carbon nanotubes. The carbon nanotube ordered film comprises a plurality of carbon nanotubes connected end to end and oriented in the direction of stretching. The width of the ordered carbon nanotube film and the size (diameter/width) of the super-sequential carbon nanotube array are The thickness of the ordered carbon nanotube film is related to the height of the super-sequential carbon nanotube array.
最後，利用上述奈米碳管有序膜製備奈米碳管結構204。 Finally, the carbon nanotube structure 204 is prepared using the above-described carbon nanotube ordered film.
該奈米碳管有序膜可作為一奈米碳管結構204使用。 The carbon nanotube ordered membrane can be used as a carbon nanotube structure 204.
進一步，還可將至少兩個奈米碳管有序膜平行無間隙或/和重疊鋪設得到一奈米碳管結構204。該多層奈米碳管結構204中，奈米碳管有序膜的層數不限，且相鄰兩層奈米碳管有序膜之間具有一交叉角度α，0≦α≦90度，具體可依據實際需求製備。 Further, at least two carbon nanotube ordered membranes may be laid parallel without gaps or/and overlap to obtain a carbon nanotube structure 204. In the multi-layered carbon nanotube structure 204, the number of layers of the ordered carbon nanotube film is not limited, and the adjacent two layers of carbon nanotubes have an intersection angle α, 0≦α≦90 degrees, It can be prepared according to actual needs.
本實施例中，進一步包括用有機溶劑處理奈米碳管結構204的步驟，該有機溶劑為揮發性有機溶劑，可選用乙醇、甲醇、丙酮、二氯乙烷及氯仿中一種或者幾種的混合，本實施例中的有機溶劑採用乙醇。該使用有機溶劑處理的步驟可通過試管將有機溶劑滴落於奈米碳管結構204表面浸潤整個奈米碳管結構204，或者，也可將上述奈米碳管結構204浸入盛有有機溶劑的容器中浸潤。所述的奈米碳管結構204經有機溶劑浸潤處理後，於揮發性有機溶劑的表面張力的作用下，奈米碳管有序膜中平行的奈米碳管片斷會部分聚集成奈米碳管束。故，該奈米碳管結構204表面體積比小，無黏性，且具有良好的機械強度及韌性。 In this embodiment, the method further comprises the step of treating the carbon nanotube structure 204 with an organic solvent, which is a volatile organic solvent, optionally using one or a combination of ethanol, methanol, acetone, dichloroethane and chloroform. The organic solvent in this embodiment is ethanol. The step of treating with an organic solvent may immerse the organic solvent on the surface of the carbon nanotube structure 204 through a test tube to infiltrate the entire carbon nanotube structure 204, or may immerse the above carbon nanotube structure 204 in an organic solvent. Infiltrated in the container. After the nanocarbon tube structure 204 is infiltrated by an organic solvent, the parallel carbon nanotube fragments in the ordered film of the carbon nanotubes are partially aggregated into the nanocarbon under the surface tension of the volatile organic solvent. Tube bundle. Therefore, the carbon nanotube structure 204 has a small surface volume ratio, is non-viscous, and has good mechanical strength and toughness.
(二)採用奈米碳管長線結構的奈米碳管結構204的製備方法，方法包括以下步驟： (2) A method for preparing a carbon nanotube structure 204 using a long carbon nanotube structure, the method comprising the steps of:
首先，製備至少一奈米碳管長線。 First, a long line of at least one carbon nanotube is prepared.
所述奈米碳管長線結構包括至少一個奈米碳管長線，所述的奈米碳管長線包括複數個奈米碳管首尾相連且沿該奈米碳管長線軸向 /長度方向擇優取向排列。具體地，該奈米碳管長線中奈米碳管沿該奈米碳管長線軸向/長度方向平行排列或呈螺旋狀排列。該奈米碳管長線中奈米碳管通過凡德瓦爾力緊密結合。請參見圖6，該奈米碳管長線中奈米碳管沿該奈米碳管長線軸向/長度方向平行排列。請參見圖7，該奈米碳管長線中奈米碳管沿該奈米碳管長線軸向/長度方向呈螺旋狀排列。 The carbon nanotube long-line structure includes at least one nano carbon tube long line, and the nano carbon tube long line includes a plurality of carbon nanotubes connected end to end and along the long axis of the nano carbon tube / Length direction preferred orientation. Specifically, the carbon nanotubes in the long line of the carbon nanotubes are arranged in parallel or spirally along the axial/longitudinal direction of the long carbon nanotubes. The carbon nanotubes in the long line of carbon nanotubes are tightly integrated by van der Waals forces. Referring to FIG. 6, the carbon nanotubes in the long carbon nanotubes are arranged in parallel along the longitudinal/longitudinal direction of the long carbon nanotubes. Referring to FIG. 7, the carbon nanotubes in the long line of the carbon nanotubes are spirally arranged along the axial/longitudinal direction of the long carbon nanotubes.
所述奈米碳管長線的製備方法為：從上述超順排的奈米碳管陣列中選取寬度較窄的奈米碳管片斷，採用一拉伸工具從奈米碳管陣列中直接拉取奈米碳管，再經過有機溶劑處理後獲得。 The preparation method of the nano carbon tube long line is: selecting a narrow carbon nanotube segment from the super-aligned carbon nanotube array, and directly pulling the carbon nanotube array from the nano carbon tube array by using a stretching tool The carbon nanotubes are obtained after treatment with an organic solvent.
所述奈米碳管長線的製備方法進一步包括：採用一機械外力將上述奈米碳管長線或者上述的奈米碳管有序膜扭轉形成一奈米碳管長線。 The preparation method of the long carbon nanotube line further comprises: twisting the long carbon nanotube line or the above-mentioned carbon nanotube ordered film by a mechanical external force to form a long carbon nanotube tube.
其次，採用該奈米碳管長線製備一奈米碳管長線結構。 Secondly, a long carbon nanotube structure is prepared by using the long carbon nanotube line.
將複數個奈米碳管長線平行且緊密設置，得到一束狀奈米碳管長線結構。進一步，採用一機械外力將該束狀奈米碳管長線結構擰成絞線狀奈米碳管長線結構。 A plurality of long carbon nanotubes are arranged in parallel and tightly to obtain a long-line structure of a bundle of carbon nanotubes. Further, the long-line structure of the bundled carbon nanotubes is twisted into a long-line structure of a stranded carbon nanotube by a mechanical external force.
(三)採用奈米碳管碾壓膜的奈米碳管結構204的製備方法，包括以下步驟： (3) A method for preparing a carbon nanotube structure 204 using a carbon nanotube rolled film, comprising the following steps:
首先，提供一奈米碳管陣列形成於一基底，該陣列為定向排列的奈米碳管陣列。 First, an array of carbon nanotubes is provided on a substrate that is an array of aligned carbon nanotubes.
所述奈米碳管陣列優選為一超順排的奈米碳管陣列。所述奈米碳管陣列與上述奈米碳管陣列的製備方法相同。 The carbon nanotube array is preferably a super-aligned array of carbon nanotubes. The carbon nanotube array is prepared in the same manner as the above-described carbon nanotube array.
其次，採用一施壓裝置，擠壓上述奈米碳管陣列獲得一奈米碳管碾壓膜，其具體過程為：該施壓裝置施加一定的壓力於上述奈米碳管陣列上。施壓的過程中，奈米碳管陣列於壓力的作用下會與生長的基底分離，從而形成由複數個奈米碳管組成的具有自支撐結構的奈米碳管碾壓膜，且所述的複數個奈米碳管基本上與奈米碳管碾壓膜的表面平行。 Next, a carbon nanotube array is extruded by using a pressing device to obtain a carbon nanotube rolled film, wherein the pressing device applies a certain pressure to the carbon nanotube array. During the pressing process, the carbon nanotube array is separated from the grown substrate by pressure to form a carbon nanotube rolled film having a self-supporting structure composed of a plurality of carbon nanotubes, and The plurality of carbon nanotubes are substantially parallel to the surface of the carbon nanotube rolled film.
本技術方案實施例中，施壓裝置為一壓頭，壓頭表面光滑，壓頭的形狀及擠壓方向決定製備的奈米碳管碾壓膜中奈米碳管的排列方式。具體地，當採用平面壓頭沿垂直於上述奈米碳管陣列生長的基底的方向擠壓時，可獲得奈米碳管為各向同性排列的奈米碳管碾壓膜；當採用滾軸狀壓頭沿某一固定方向碾壓時，可獲得奈米碳管沿該固定方向取向排列的奈米碳管碾壓膜；當採用滾軸狀壓頭沿不同方向碾壓時，可獲得奈米碳管沿不同方向取向排列的奈米碳管碾壓膜。 In the embodiment of the technical solution, the pressing device is an indenter, the surface of the indenter is smooth, and the shape and extrusion direction of the indenter determine the arrangement of the carbon nanotubes in the prepared carbon nanotube rolled film. Specifically, when the planar indenter is pressed in a direction perpendicular to the substrate grown by the carbon nanotube array, the carbon nanotubes are obtained as isotropically arranged carbon nanotube rolled film; When the pressure head is rolled in a certain fixed direction, a carbon nanotube film which is aligned along the fixed direction of the carbon nanotubes can be obtained; when the roller-shaped indenter is rolled in different directions, the naphthalene can be obtained. The carbon nanotubes are arranged in a carbon nanotube tube oriented in different directions.
可以理解，當採用上述不同方式擠壓上述的奈米碳管陣列時，奈米碳管會在壓力的作用下傾倒，並與相鄰的奈米碳管通過凡德瓦爾力相互吸引、連接形成由複數個奈米碳管組成的具有自支撐結構的奈米碳管碾壓膜。所述的複數個奈米碳管與該奈米碳管碾壓膜的表面成一夾角α，其中，α大於等於零度且小於等於15度(0≦α≦15°)。依據碾壓得方式不同，該奈米碳管碾壓膜中的奈米碳管可沿一固定方向擇優取向排列，請參閱圖8；或沿不同方向擇優取向排列，請參閱圖9。另外，在壓力的作用下，奈米碳管陣列會與生長的基底分離，從而使得該奈米碳管碾壓膜容易與基底脫離。 It can be understood that when the above-mentioned carbon nanotube array is extruded by the above different methods, the carbon nanotubes are poured under the action of pressure, and are attracted and connected with adjacent carbon nanotubes through the van der Waals force. A carbon nanotube laminated film having a self-supporting structure composed of a plurality of carbon nanotubes. The plurality of carbon nanotubes form an angle α with the surface of the carbon nanotube rolled film, wherein α is greater than or equal to zero degrees and less than or equal to 15 degrees (0≦α≦15°). Depending on the way of crushing, the carbon nanotubes in the carbon nanotube film can be aligned in a fixed orientation, see Figure 8; or in different orientations, see Figure 9. In addition, under the action of pressure, the carbon nanotube array is separated from the grown substrate, so that the carbon nanotube rolled film is easily detached from the substrate.
本技術領域技術人員應明白，上述奈米碳管陣列的傾倒程度(傾角)與壓力的大小有關，壓力越大，傾角越大。製備的奈米碳管碾壓膜的厚度取決於奈米碳管陣列的高度及壓力大小。奈米碳管陣列的高度越大而施加的壓力越小，則製備的奈米碳管碾壓膜的厚度越大；反之，奈米碳管陣列的高度越小而施加的壓力越大，則製備的奈米碳管碾壓膜的厚度越小。該奈米碳管碾壓膜的寬度與奈米碳管陣列所生長的基底的尺寸有關，該奈米碳管碾壓膜的長度不限，可根據實際需求製得。本技術方案實施例中獲得的奈米碳管碾壓膜，該奈米碳管碾壓膜的厚度為1微米~2毫米。 Those skilled in the art will appreciate that the degree of tilt (inclination) of the above-described carbon nanotube array is related to the magnitude of the pressure, and the greater the pressure, the greater the angle of inclination. The thickness of the prepared carbon nanotube rolled film depends on the height and pressure of the carbon nanotube array. The higher the height of the carbon nanotube array and the lower the applied pressure, the greater the thickness of the prepared carbon nanotube rolled film; conversely, the smaller the height of the carbon nanotube array and the greater the applied pressure, The thickness of the prepared carbon nanotube rolled film is smaller. The width of the carbon nanotube rolled film is related to the size of the substrate on which the carbon nanotube array is grown. The length of the carbon nanotube rolled film is not limited and can be obtained according to actual needs. The carbon nanotube rolled film obtained in the embodiment of the technical solution has a thickness of 1 micrometer to 2 mm.
上述奈米碳管碾壓膜中包括複數個沿同一方向或擇優取向排列的奈米碳管，所述奈米碳管之間通過凡德瓦爾力相互吸，故，該奈米碳管碾壓膜具有很好的韌性。該奈米碳管碾壓膜中，奈米碳管均勻分佈，規則排列。 The carbon nanotube rolled film includes a plurality of carbon nanotubes arranged in the same direction or in a preferred orientation, and the carbon nanotubes are mutually sucked by van der Waals force, so the carbon nanotubes are crushed. The film has good toughness. In the carbon nanotube rolled film, the carbon nanotubes are evenly distributed and regularly arranged.
可以理解，該奈米碳管碾壓膜的具有一定的厚度，且通過奈米碳管陣列的高度及壓力大小可控制其厚度。故，該奈米碳管碾壓膜可直接作為一奈米碳管結構204使用。 It can be understood that the carbon nanotube rolled film has a certain thickness, and the thickness can be controlled by the height and pressure of the carbon nanotube array. Therefore, the carbon nanotube rolled film can be directly used as a carbon nanotube structure 204.
(四)採用奈米碳管絮化膜的奈米碳管結構204的製備方法，包括以下步驟： (4) A method for preparing a carbon nanotube structure 204 using a carbon nanotube flocculation membrane, comprising the steps of:
首先，提供一奈米碳管原料。 First, a carbon nanotube raw material is provided.
所述奈米碳管原料可為通過化學氣相沈積法、石墨電極恒流電弧放電沈積法或鐳射蒸發沈積法等各種方法製備的奈米碳管。 The carbon nanotube raw material may be a carbon nanotube prepared by various methods such as chemical vapor deposition, graphite electrode constant current arc discharge deposition or laser evaporation deposition.
本實施例中，採用刀片或其他工具將上述定向排列的奈米碳管陣列從基底刮落，獲得一奈米碳管原料。優選地，所述的奈米碳管 原料中，奈米碳管的長度大於100微米。 In this embodiment, the aligned carbon nanotube arrays are scraped off the substrate by using a blade or other tool to obtain a carbon nanotube raw material. Preferably, the carbon nanotube In the raw material, the length of the carbon nanotubes is greater than 100 microns.
其次，將上述奈米碳管原料添加到一溶劑中並進行絮化處理獲得一奈米碳管絮狀結構，將上述奈米碳管絮狀結構從溶劑中分離，並對該奈米碳管絮狀結構定型處理以獲得一奈米碳管薄膜。 Next, the above carbon nanotube raw material is added to a solvent and subjected to flocculation treatment to obtain a nano carbon tube floc structure, and the above carbon nanotube floc structure is separated from the solvent, and the carbon nanotube is separated. The flocculated structure is shaped to obtain a carbon nanotube film.
本技術方案實施例中，溶劑可選用水、易揮發的有機溶劑等。絮化處理可通過採用超聲波分散處理或高強度攪拌等方法。優選地，本技術方案實施例採用超聲波分散10分鐘~30分鐘。由於奈米碳管具有極大的比表面積，相互纏繞的奈米碳管之間具有較大的凡德瓦爾力。上述絮化處理並不會將該奈米碳管原料中的奈米碳管完全分散於溶劑中，奈米碳管之間通過凡德瓦爾力相互吸引、纏繞，形成網絡狀結構。 In the embodiment of the technical solution, the solvent may be selected from water, a volatile organic solvent or the like. The flocculation treatment can be carried out by a method such as ultrasonic dispersion treatment or high-intensity stirring. Preferably, the embodiment of the technical solution uses ultrasonic dispersion for 10 minutes to 30 minutes. Due to the extremely large specific surface area of the carbon nanotubes, there is a large van der Waals force between the intertwined carbon nanotubes. The above flocculation treatment does not completely disperse the carbon nanotubes in the carbon nanotube raw material in the solvent, and the carbon nanotubes are mutually attracted and entangled by the van der Waals force to form a network structure.
本技術方案實施例中，所述的分離奈米碳管絮狀結構的方法具體包括以下步驟：將上述含有奈米碳管絮狀結構的溶劑倒入一放有濾紙的漏斗中；靜置乾燥一段時間從而獲得一分離的奈米碳管絮狀結構，圖10為該奈米碳管絮狀結構的照片。 In the embodiment of the technical solution, the method for separating the carbon nanotube floc structure comprises the following steps: pouring the solvent containing the carbon nanotube floc structure into a funnel with a filter paper; A time is obtained to obtain a separated carbon nanotube floc structure, and FIG. 10 is a photograph of the carbon nanotube floc structure.
本技術方案實施例中，所述的奈米碳管絮狀結構的定型處理過程具體包括以下步驟：將上述奈米碳管絮狀結構置於一容器中；將該奈米碳管絮狀結構按照預定形狀攤開；施加一定壓力於攤開的奈米碳管絮狀結構；及，將該奈米碳管絮狀結構中殘留的溶劑烘乾或等溶劑自然揮發後獲得一奈米碳管絮化膜，圖11為該奈米碳管絮化膜的照片。 In the embodiment of the technical solution, the shaping process of the carbon nanotube floc structure specifically includes the following steps: placing the carbon nanotube floc structure in a container; and the carbon nanotube floc structure Spreading according to a predetermined shape; applying a certain pressure to the expanded carbon nanotube floc structure; and drying the solvent remaining in the carbon nanotube floc structure or naturally evaporating the solvent to obtain a carbon nanotube The flocculated membrane, Figure 11 is a photograph of the carbon nanotube flocculation membrane.
可以理解，本技術方案實施例可通過控制該奈米碳管絮狀結構攤開的面積來控制該奈米碳管絮化膜的厚度及面密度。奈米碳管絮 狀結構攤開的面積越大，則該奈米碳管絮化膜的厚度及面密度就越小。本技術方案實施例中獲得的奈米碳管絮化膜，該奈米碳管絮化膜的厚度為1微米-2毫米。 It can be understood that the embodiment of the technical solution can control the thickness and the areal density of the carbon nanotube flocculation film by controlling the area spread by the carbon nanotube floc structure. Nano carbon tube The larger the area where the structure is spread, the smaller the thickness and areal density of the carbon nanotube film. The carbon nanotube flocculation membrane obtained in the embodiment of the technical solution has a thickness of 1 micrometer to 2 millimeters.
另外，上述分離與定型處理奈米碳管絮狀結構的步驟也可直接通過抽濾的方式實現，具體包括以下步驟：提供一微孔濾膜及一抽氣漏斗；將上述含有奈米碳管絮狀結構的溶劑經過該微孔濾膜倒入該抽氣漏斗中；抽濾並乾燥後獲得一奈米碳管絮化膜。該微孔濾膜為一表面光滑、孔徑為0.22微米的濾膜。由於抽濾方式本身將提供一較大的氣壓作用於該奈米碳管絮狀結構，該奈米碳管絮狀結構經過抽濾會直接形成一均勻的奈米碳管絮化膜。且，由於微孔濾膜表面光滑，該奈米碳管絮化膜容易剝離。 In addition, the step of separating and shaping the carbon nanotube floc structure can also be directly performed by suction filtration, and specifically includes the following steps: providing a microporous membrane and an extraction funnel; and the above-mentioned carbon nanotubes are included The solvent of the floc structure is poured into the suction funnel through the microporous membrane; after suction filtration and drying, a carbon nanotube flocculation membrane is obtained. The microporous membrane is a filter membrane having a smooth surface and a pore size of 0.22 μm. Since the suction filtration method itself will provide a large gas pressure on the carbon nanotube floc structure, the carbon nanotube floc structure directly forms a uniform carbon nanotube flocculation membrane by suction filtration. Moreover, since the surface of the microporous filter membrane is smooth, the carbon nanotube film is easily peeled off.
請參見圖12，上述奈米碳管絮化膜中包括相互纏繞的奈米碳管，所述奈米碳管之間通過凡德瓦爾力相互吸引、纏繞，形成網絡狀結構，故，該奈米碳管絮化膜具有很好的韌性。該奈米碳管絮化膜中，奈米碳管為各向同性，均勻分佈，無規則排列。 Referring to FIG. 12, the carbon nanotube film of the above-mentioned carbon nanotubes comprises intertwined carbon nanotubes, and the carbon nanotubes are mutually attracted and entangled by van der Waals force to form a network structure. The carbon nanotube film has good toughness. In the carbon nanotube flocculation membrane, the carbon nanotubes are isotropic, uniformly distributed, and randomly arranged.
可以理解，該奈米碳管絮化膜的具有一定的厚度，且通過控制該奈米碳管絮狀結構攤開的面積及壓力大小可控制其厚度。故，該奈米碳管絮化膜可直接作為一奈米碳管結構204使用。 It can be understood that the carbon nanotube flocculation membrane has a certain thickness, and the thickness can be controlled by controlling the area and pressure of the carbon nanotube floc structure. Therefore, the carbon nanotube flocculation membrane can be directly used as a carbon nanotube structure 204.
步驟四，將該奈米碳管結構204設置於所述反射層210的表面作為加熱層。 In step four, the carbon nanotube structure 204 is disposed on the surface of the reflective layer 210 as a heating layer.
將上述奈米碳管結構204設置於所述反射層210表面的方法為：由於奈米碳管結構204具有黏性，故，可將一奈米碳管結構204直接纏繞或包裹於所述反射層210表面，並通過其黏性固定於反射層 210表面。或者，也可通過黏結劑將一奈米碳管結構204固定於所述反射層210表面。所述黏結劑為矽膠。可以理解，如果製備的線熱源20不包括反射層210，可將奈米碳管結構204直接設置於線狀基底202的表面。 The method of disposing the carbon nanotube structure 204 on the surface of the reflective layer 210 is: because the carbon nanotube structure 204 is viscous, a carbon nanotube structure 204 can be directly wound or wrapped around the reflection. The surface of layer 210 is fixed to the reflective layer by its adhesion 210 surface. Alternatively, a carbon nanotube structure 204 may be attached to the surface of the reflective layer 210 by a binder. The binder is silicone. It can be understood that if the prepared line heat source 20 does not include the reflective layer 210, the carbon nanotube structure 204 can be directly disposed on the surface of the linear substrate 202.
可以理解，所述奈米碳管結構204的設置方式與該奈米碳管結構204的具體結構有關。當奈米碳管結構204包括奈米碳管有序膜或包括奈米碳管碾壓膜，且奈米碳管碾壓膜中奈米碳管沿同一方向或不同方向擇優取向排列時，需保證該奈米碳管結構204中的部分奈米碳管由線狀基底202的一端向另一端排列。當奈米碳管結構204包括絮化膜或包括奈米碳管碾壓膜，且奈米碳管碾壓膜中奈米碳管各向同性時，所述奈米碳管結構204的設置方式不限。當奈米碳管結構204包括奈米碳管長線時，可將單個奈米碳管長線纏繞於線狀基底202的表面或將複數個奈米碳管長線平行或交叉設置於線狀基底202的表面。可以理解，當將複數個奈米碳管長線平行設置於線狀基底202的表面時，奈米碳管長線需沿線狀基底202的長度方向設置。本實施例中，優選地，奈米碳管結構204採用重疊且交叉設置的100層奈米碳管有序膜，相鄰兩層奈米碳管有序膜之間交叉的角度為90度。該奈米碳管結構204中奈米碳管有序膜的長度為5厘米，奈米碳管有序膜的寬度為3厘米，奈米碳管有序膜的厚度為50微米。利用奈米碳管結構204本身的黏性，將該奈米碳管結構204包裹於所述反射層210的表面。 It will be appreciated that the arrangement of the carbon nanotube structure 204 is related to the specific structure of the carbon nanotube structure 204. When the carbon nanotube structure 204 includes a carbon nanotube ordered film or a carbon nanotube rolled film, and the carbon nanotubes in the carbon nanotube rolled film are arranged in the same direction or in different directions, It is ensured that a part of the carbon nanotubes in the carbon nanotube structure 204 are arranged from one end of the linear substrate 202 to the other end. When the carbon nanotube structure 204 includes a flocculated membrane or a carbon nanotube-containing laminated membrane, and the carbon nanotubes are isotropic in the carbon nanotube rolled membrane, the arrangement of the carbon nanotube structure 204 is Not limited. When the carbon nanotube structure 204 includes a long carbon nanotube line, a single carbon nanotube long line may be wound on the surface of the linear substrate 202 or a plurality of carbon nanotube long lines may be parallel or cross-arranged to the linear substrate 202. surface. It can be understood that when a plurality of long carbon nanotube long wires are arranged in parallel on the surface of the linear substrate 202, the long carbon nanotube wires are disposed along the length direction of the linear substrate 202. In this embodiment, preferably, the carbon nanotube structure 204 adopts an overlapping and intersecting 100-layer carbon nanotube ordered film, and the angle between the adjacent two layers of carbon nanotube ordered films is 90 degrees. In the carbon nanotube structure 204, the ordered size of the carbon nanotube film is 5 cm, the width of the ordered carbon nanotube film is 3 cm, and the thickness of the ordered carbon nanotube film is 50 μm. The carbon nanotube structure 204 is wrapped around the surface of the reflective layer 210 by the viscosity of the carbon nanotube structure 204 itself.
奈米碳管具有良好的導電性能及熱穩定性，作為一理想的黑體結構，且具有比較高的熱輻射效率。故，該奈米碳管結構204可作為線熱源20的加熱層。 The carbon nanotube has good electrical conductivity and thermal stability, and is an ideal black body structure with relatively high heat radiation efficiency. Therefore, the carbon nanotube structure 204 can serve as a heating layer for the line heat source 20.
步驟五，間隔形成兩個電極206於該線狀基底202的兩端，該兩個電極206與該奈米碳管結構204形成電連接。 In step five, two electrodes 206 are formed at two ends of the linear substrate 202, and the two electrodes 206 are electrically connected to the carbon nanotube structure 204.
所述的兩個電極206的設置方式與奈米碳管結構204有關，需保證奈米碳管結構204中的部分奈米碳管沿著其中一個電極206向另一個電極206方向延伸。 The arrangement of the two electrodes 206 is related to the carbon nanotube structure 204, and it is necessary to ensure that a part of the carbon nanotubes in the carbon nanotube structure 204 extend along one of the electrodes 206 toward the other electrode 206.
所述的兩個電極206可設置於奈米碳管結構204的同一表面上或不同表面上，且兩個電極206環繞設置於奈米碳管結構204的表面。其中，兩個電極206之間相隔設置，以使奈米碳管結構204應用於線熱源20時接入一定的阻值避免短路現象產生。奈米碳管結構204本身有很好的黏附性與導電性，故電極206可與奈米碳管結構204之間形成很好的電接觸。 The two electrodes 206 may be disposed on the same surface of the carbon nanotube structure 204 or on different surfaces, and the two electrodes 206 are disposed around the surface of the carbon nanotube structure 204. Wherein, the two electrodes 206 are spaced apart to allow a certain resistance to be applied when the carbon nanotube structure 204 is applied to the line heat source 20 to avoid short circuit. The carbon nanotube structure 204 itself has good adhesion and electrical conductivity, so that the electrode 206 can form a good electrical contact with the carbon nanotube structure 204.
所述電極206為導電薄膜、金屬片或者金屬引線。該導電薄膜的材料可為金屬、合金、銦錫氧化物(ITO)、銻錫氧化物(ATO)、導電銀膠、導電聚合物等。該導電薄膜可通過物理氣相沈積法，化學氣相沈積法或其他方法形成於奈米碳管結構204表面。該金屬片可為銅片或鋁片等。該金屬片或者金屬引線可通過導電黏結劑固定於奈米碳管結構204表面。 The electrode 206 is a conductive film, a metal sheet or a metal lead. The material of the conductive film may be metal, alloy, indium tin oxide (ITO), antimony tin oxide (ATO), conductive silver paste, conductive polymer, or the like. The conductive film may be formed on the surface of the carbon nanotube structure 204 by physical vapor deposition, chemical vapor deposition or other methods. The metal piece may be a copper piece or an aluminum piece or the like. The metal sheet or metal lead may be fixed to the surface of the carbon nanotube structure 204 by a conductive adhesive.
所述電極206還可為一金屬性奈米碳管層。該奈米碳管層設置於奈米碳管結構204的表面。該奈米碳管層可通過其自身的黏性或導電黏結劑固定於奈米碳管結構204的表面。該奈米碳管層包括定向排列且均勻分佈的金屬性奈米碳管。具體地，該奈米碳管層包括至少一有奈米管序碳膜或至少一奈米碳管長線。 The electrode 206 can also be a metallic carbon nanotube layer. The carbon nanotube layer is disposed on the surface of the carbon nanotube structure 204. The carbon nanotube layer can be attached to the surface of the carbon nanotube structure 204 by its own viscous or electrically conductive adhesive. The carbon nanotube layer comprises aligned and uniformly distributed metallic carbon nanotubes. Specifically, the carbon nanotube layer comprises at least one nano-tube carbon film or at least one nano-carbon tube long line.
本實施例中，優選地，將兩個奈米碳管有序膜分別設置於沿線狀 基底202長度方向的兩端作為電極206。該兩個奈米碳管有序膜環繞於加熱層204的內表面，並通過導電黏結劑與奈米碳管結構204之間形成電接觸。所述導電黏結劑優選為銀膠。由於本實施例中的奈米碳管結構204與加熱層204均採用奈米碳管有序膜，可降低奈米碳管結構204與電極206之間的歐姆接觸電阻，從而提高線熱源20對電能的利用率。 In this embodiment, preferably, two carbon nanotube ordered films are respectively disposed along the line shape Both ends of the substrate 202 in the longitudinal direction serve as the electrodes 206. The two carbon nanotube ordered films surround the inner surface of the heating layer 204 and form electrical contact with the carbon nanotube structure 204 by a conductive bonding agent. The conductive adhesive is preferably a silver paste. Since the carbon nanotube structure 204 and the heating layer 204 in this embodiment both adopt a carbon nanotube ordered film, the ohmic contact resistance between the carbon nanotube structure 204 and the electrode 206 can be reduced, thereby improving the line heat source 20 pair. Utilization of electrical energy.
可以理解，本實施例中，還可先於奈米碳管結構204的表面形成兩個平行且間隔設置的電極206，且該電極206與奈米碳管結構204電連接。然後，將該形成有電極206的奈米碳管結構204設置於上述反射層210的表面，得到一線熱源20。如果製備的線熱源20不包括反射層210，可將奈米碳管結構204直接設置於線狀基底202的表面。 It can be understood that, in this embodiment, two parallel and spaced electrodes 206 may be formed on the surface of the carbon nanotube structure 204, and the electrode 206 is electrically connected to the carbon nanotube structure 204. Then, the carbon nanotube structure 204 on which the electrode 206 is formed is placed on the surface of the reflective layer 210 to obtain a line heat source 20. If the prepared line heat source 20 does not include the reflective layer 210, the carbon nanotube structure 204 can be disposed directly on the surface of the linear substrate 202.
步驟六，形成一絕緣保護層208於所述奈米碳管結構204的外表面，並將電極206覆蓋，形成一線熱源20。 In step six, an insulating protective layer 208 is formed on the outer surface of the carbon nanotube structure 204, and the electrode 206 is covered to form a line of heat source 20.
所述絕緣保護層208的材料為一絕緣材料，如：橡膠、樹脂等。所述絕緣保護層208厚度不限，可根據實際情況選擇。本實施例中，該絕緣保護層208的材料採用橡膠，其厚度為0.5~2毫米。該絕緣保護層208可通過塗敷或包裹的方法形成於奈米碳管結構204的表面。所述絕緣保護層208用來防止該線熱源20於使用時與外界形成電接觸，同時還可防止奈米碳管結構204中的奈米碳管吸附外界雜質。可以理解，本實施例提供的線熱源20中絕緣保護層208為一可選結構，故，該步驟六也為一可選步驟。 The material of the insulating protective layer 208 is an insulating material such as rubber, resin or the like. The thickness of the insulating protection layer 208 is not limited and may be selected according to actual conditions. In this embodiment, the insulating protective layer 208 is made of rubber and has a thickness of 0.5 to 2 mm. The insulating protective layer 208 can be formed on the surface of the carbon nanotube structure 204 by coating or wrapping. The insulating protective layer 208 is used to prevent the line heat source 20 from making electrical contact with the outside during use, and also prevents the carbon nanotubes in the carbon nanotube structure 204 from adsorbing foreign impurities. It can be understood that the insulating protection layer 208 of the line heat source 20 provided in this embodiment is an optional structure. Therefore, the step 6 is also an optional step.
相較於先前技術，本技術方案實施例所提供的線熱源的製備方法工藝簡單，成本低廉，可用於製備微型線熱源，且該方法製備的 線熱源具有以下優點：第一，奈米碳管的直徑較小，使得奈米碳管層具有較小的厚度，可製備微型線熱源，應用於微型器件的加熱。第二，奈米碳管比碳纖維具有更小的密度，故，採用奈米碳管層的線熱源具有更輕的重量，使用方便。第三，所述的奈米碳管層具有較低的電阻，且奈米碳管的電熱轉換效率高，熱阻率低，故，該線熱源具有升溫迅速、熱滯後小、熱交換速度快的特點。 Compared with the prior art, the method for preparing a line heat source provided by the embodiments of the present technical solutions is simple in process, low in cost, and can be used for preparing a microwire heat source, and the method is prepared by the method. The line heat source has the following advantages: First, the diameter of the carbon nanotubes is small, so that the carbon nanotube layer has a small thickness, and a microwire heat source can be prepared for heating of the micro device. Second, the carbon nanotubes have a smaller density than the carbon fibers. Therefore, the line heat source using the carbon nanotube layer has a lighter weight and is convenient to use. Third, the carbon nanotube layer has a low electrical resistance, and the carbon nanotube has high electrothermal conversion efficiency and low thermal resistance. Therefore, the line heat source has rapid temperature rise, small thermal hysteresis, and fast heat exchange rate. specialty.
綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
Claims (18)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW097128284A TWI448416B (en) | 2008-07-25 | 2008-07-25 | Method for making linear heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW097128284A TWI448416B (en) | 2008-07-25 | 2008-07-25 | Method for making linear heater |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201004859A TW201004859A (en) | 2010-02-01 |
| TWI448416B true TWI448416B (en) | 2014-08-11 |
Family
ID=44826071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097128284A TWI448416B (en) | 2008-07-25 | 2008-07-25 | Method for making linear heater |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI448416B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6501056B1 (en) * | 1998-04-28 | 2002-12-31 | E. Tec Corporation | Carbon heating element and method of manufacturing the same |
| JP2004186102A (en) * | 2002-12-06 | 2004-07-02 | Jfe Engineering Kk | Carbon nanotube aggregate having layered structure and product using the same |
| JP2008168631A (en) * | 2007-01-15 | 2008-07-24 | Samsung Electronics Co Ltd | Heat generating structure for ink-jet print head, its manufacturing method, and ink-jet print head having it |
-
2008
- 2008-07-25 TW TW097128284A patent/TWI448416B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6501056B1 (en) * | 1998-04-28 | 2002-12-31 | E. Tec Corporation | Carbon heating element and method of manufacturing the same |
| JP2004186102A (en) * | 2002-12-06 | 2004-07-02 | Jfe Engineering Kk | Carbon nanotube aggregate having layered structure and product using the same |
| JP2008168631A (en) * | 2007-01-15 | 2008-07-24 | Samsung Electronics Co Ltd | Heat generating structure for ink-jet print head, its manufacturing method, and ink-jet print head having it |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201004859A (en) | 2010-02-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI420954B (en) | Heater and method for making the same | |
| TW201240480A (en) | Thermoacoustic device | |
| TWI399119B (en) | Linear heater | |
| JP5280951B2 (en) | Wire heat source | |
| KR20090131652A (en) | Linear heater and methods for making the same | |
| JP5390273B2 (en) | Wire heat source | |
| JP5390280B2 (en) | Wire heat source | |
| TWI486972B (en) | Superconducting wire | |
| KR101195273B1 (en) | Three-dimensional heat source | |
| TWI448416B (en) | Method for making linear heater | |
| JP2010034062A (en) | Hollow heater | |
| TWI382782B (en) | Method for making hollow heating source | |
| TWI400984B (en) | Planar heater | |
| CN101626640B (en) | Method for preparing linear heat source | |
| JP5638207B2 (en) | Wire heat source | |
| TWI513357B (en) | Three-dimensional heat source | |
| TWI400985B (en) | Method for making planar heater | |
| TWI400983B (en) | Planar heater | |
| CN101636009B (en) | Method for preparing hollow heat source | |
| TWI399120B (en) | Planar heater | |
| TWI408990B (en) | Linear heater | |
| JP5059808B2 (en) | Hollow heat source | |
| TWI408989B (en) | Linear heater | |
| TWI478617B (en) | Method for making three-dimensional heat source | |
| TWI501685B (en) | Three-dimensional heat source |