TWI447964B - LED wafer manufacturing method - Google Patents
LED wafer manufacturing method Download PDFInfo
- Publication number
- TWI447964B TWI447964B TW100132143A TW100132143A TWI447964B TW I447964 B TWI447964 B TW I447964B TW 100132143 A TW100132143 A TW 100132143A TW 100132143 A TW100132143 A TW 100132143A TW I447964 B TWI447964 B TW I447964B
- Authority
- TW
- Taiwan
- Prior art keywords
- led
- reflective film
- laser
- substrate
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000000758 substrate Substances 0.000 claims description 49
- 239000010980 sapphire Substances 0.000 claims description 18
- 229910052594 sapphire Inorganic materials 0.000 claims description 18
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000002834 transmittance Methods 0.000 claims description 3
- 239000010408 film Substances 0.000 description 68
- 239000000463 material Substances 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 17
- 239000010410 layer Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 13
- 238000002679 ablation Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 238000000608 laser ablation Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000005068 transpiration Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dicing (AREA)
- Laser Beam Processing (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011012547A JP5548143B2 (ja) | 2011-01-25 | 2011-01-25 | Ledチップの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201232836A TW201232836A (en) | 2012-08-01 |
TWI447964B true TWI447964B (zh) | 2014-08-01 |
Family
ID=46527963
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW100132143A TWI447964B (zh) | 2011-01-25 | 2011-09-06 | LED wafer manufacturing method |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5548143B2 (ko) |
KR (1) | KR101390115B1 (ko) |
CN (1) | CN102610711B (ko) |
TW (1) | TWI447964B (ko) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5658043B2 (ja) * | 2011-01-07 | 2015-01-21 | 株式会社ディスコ | 分割方法 |
JP2012238746A (ja) * | 2011-05-12 | 2012-12-06 | Disco Abrasive Syst Ltd | 光デバイスウエーハの分割方法 |
JP6423135B2 (ja) * | 2012-11-29 | 2018-11-14 | 三星ダイヤモンド工業株式会社 | パターン付き基板の分割方法 |
TWI483802B (zh) * | 2012-12-14 | 2015-05-11 | Ind Tech Res Inst | 雷射加工裝置及其方法 |
CN103934567A (zh) * | 2013-01-21 | 2014-07-23 | 均豪精密工业股份有限公司 | 激光加工***及其方法 |
JP6405556B2 (ja) * | 2013-07-31 | 2018-10-17 | リンテック株式会社 | 保護膜形成フィルム、保護膜形成用シートおよび検査方法 |
JP6241174B2 (ja) * | 2013-09-25 | 2017-12-06 | 三星ダイヤモンド工業株式会社 | レーザー加工装置、および、パターン付き基板の加工条件設定方法 |
US9953856B2 (en) | 2014-01-22 | 2018-04-24 | Lintec Corporation | Protective film-forming film, sheet for forming protective film, complex sheet for forming protective film, and method of producing manufactured product |
WO2015111632A1 (ja) * | 2014-01-22 | 2015-07-30 | リンテック株式会社 | 保護膜形成フィルム、保護膜形成用シート、保護膜形成用複合シートおよび検査方法 |
JP6562014B2 (ja) * | 2017-02-20 | 2019-08-21 | 日亜化学工業株式会社 | 発光素子の製造方法 |
JP6228343B1 (ja) * | 2017-06-20 | 2017-11-08 | リンテック株式会社 | 保護膜形成フィルム、保護膜形成用シートおよび検査方法 |
JP6401364B2 (ja) * | 2017-10-12 | 2018-10-10 | リンテック株式会社 | 保護膜形成用複合シートおよびレーザー印字方法 |
JP2018026597A (ja) * | 2017-11-16 | 2018-02-15 | ローム株式会社 | 発光素子および発光素子パッケージ |
KR102152007B1 (ko) * | 2020-03-18 | 2020-09-04 | 주식회사 탑 엔지니어링 | 기판 절단 방법 및 기판 절단 장치 |
CN113695748B (zh) * | 2021-08-23 | 2022-10-25 | 西安交通大学 | 一种基于空间光调制器的鲨鱼皮表面结构快速制备方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW326437B (en) * | 1995-06-10 | 1998-02-11 | Pilkington Glass Ltd | A back surface mirror comprising a reflect coating and reflecting enhancing layers and method for producing the same |
JP2002192367A (ja) * | 2000-09-13 | 2002-07-10 | Hamamatsu Photonics Kk | レーザ加工方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3439063B2 (ja) * | 1997-03-24 | 2003-08-25 | 三洋電機株式会社 | 半導体発光素子および発光ランプ |
JP3769872B2 (ja) * | 1997-05-06 | 2006-04-26 | ソニー株式会社 | 半導体発光素子 |
JP3604550B2 (ja) * | 1997-12-16 | 2004-12-22 | 日亜化学工業株式会社 | 窒化物半導体素子の製造方法 |
JP3895287B2 (ja) * | 2003-03-06 | 2007-03-22 | 弘明 三澤 | サファイア基板の分割方法及び分割装置 |
JP4279631B2 (ja) * | 2003-08-20 | 2009-06-17 | 三菱化学株式会社 | 窒化物系半導体素子の製造方法 |
JP2005271563A (ja) * | 2004-03-26 | 2005-10-06 | Daitron Technology Co Ltd | 硬脆材料板体の分割加工方法及び装置 |
-
2011
- 2011-01-25 JP JP2011012547A patent/JP5548143B2/ja not_active Expired - Fee Related
- 2011-09-06 TW TW100132143A patent/TWI447964B/zh not_active IP Right Cessation
- 2011-10-24 CN CN201110329555.7A patent/CN102610711B/zh not_active Expired - Fee Related
- 2011-12-22 KR KR1020110139660A patent/KR101390115B1/ko not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW326437B (en) * | 1995-06-10 | 1998-02-11 | Pilkington Glass Ltd | A back surface mirror comprising a reflect coating and reflecting enhancing layers and method for producing the same |
JP2002192367A (ja) * | 2000-09-13 | 2002-07-10 | Hamamatsu Photonics Kk | レーザ加工方法 |
Also Published As
Publication number | Publication date |
---|---|
TW201232836A (en) | 2012-08-01 |
KR20120086241A (ko) | 2012-08-02 |
CN102610711B (zh) | 2015-04-08 |
JP2012156217A (ja) | 2012-08-16 |
CN102610711A (zh) | 2012-07-25 |
KR101390115B1 (ko) | 2014-04-28 |
JP5548143B2 (ja) | 2014-07-16 |
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Legal Events
Date | Code | Title | Description |
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MM4A | Annulment or lapse of patent due to non-payment of fees |