TWI440974B - Stamp for imprint lithography and imprint lithography method using the same - Google Patents
Stamp for imprint lithography and imprint lithography method using the same Download PDFInfo
- Publication number
- TWI440974B TWI440974B TW096144560A TW96144560A TWI440974B TW I440974 B TWI440974 B TW I440974B TW 096144560 A TW096144560 A TW 096144560A TW 96144560 A TW96144560 A TW 96144560A TW I440974 B TWI440974 B TW I440974B
- Authority
- TW
- Taiwan
- Prior art keywords
- stamper
- back support
- imprint lithography
- polyethylene
- polymer
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41K—STAMPS; STAMPING OR NUMBERING APPARATUS OR DEVICES
- B41K3/00—Apparatus for stamping articles having integral means for supporting the articles to be stamped
- B41K3/02—Apparatus for stamping articles having integral means for supporting the articles to be stamped with stamping surface located above article-supporting surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
Description
本發明係有關於一種壓印微影術用壓模及利用其之壓印微影術方法，更詳而言之，係關於一種壓印微影術用壓模及利用其之壓印微影術方法，該壓印微影術在利用高分子樹脂之壓模而形成圖案中，於具有圖案形狀的高分子樹脂模具之裡表面蒸鍍而包含有導電體的高光透射率的導電層作為背面支持體來使用，藉此抑制靜電的發生，且於利用高分子樹脂模具之成形物製造步驟的壓印微影術中，防止因所產生的靜電而會產生的異物的黏著及下部圖案的毀損，而可於基板提供良好品質的圖案。The present invention relates to a stamping lithography stamper and an embossing lithography method using the same, and more particularly to a stamping lithography stamper and an embossing lithography using the same In the method of forming a pattern by a stamper of a polymer resin, the imprint lithography is deposited on the surface of a polymer resin mold having a pattern shape, and a conductive layer having a high light transmittance of a conductor is used as a back surface. The support is used to suppress the occurrence of static electricity, and in the imprint lithography using the molding process of the polymer resin mold, the adhesion of the foreign matter generated by the generated static electricity and the damage of the lower pattern are prevented. A good quality pattern can be provided on the substrate.
於半導體及LCD製造工程中所利用的作為光微影術(Photolithography)製程的曝光技術，係基於投射印刷技術，且作為使用短波長的光源與複數的光學透鏡而形成基板上的微細圖案之必要步驟而被進行，並間接地將圖案轉印至晶圓或玻璃等之基板上的技術。The exposure technology used in semiconductor and LCD manufacturing engineering as a photolithography process is based on projection printing technology and is necessary to form a fine pattern on a substrate using a short-wavelength light source and a plurality of optical lenses. The technique of performing the step and indirectly transferring the pattern onto a substrate such as a wafer or glass.
前述光微影術(Photolithography)製程方法，係於基板上以薄膜形式蒸鍍圖案而形成對象物質後，並於其上蒸鍍或塗布對光具有反應性的高分子物質(光阻劑等)。其後，於正型光阻劑的情形中，利用將所希望的圖案經陽刻設計的遮罩，於高分子物質上照光而曝光(Exposure)之後，利用顯像液(Developer)去除被光照射的部分之高分子物質，而如所設計的遮罩形狀於基板上陽刻形成高分子物質(光阻劑)的圖案。將前述陽刻形成有高分子物質的圖案之基板曝露於蝕刻液或蝕刻氣體中，而形成有圖案的高分子物質對蝕刻液體或氣體係扮演遮罩的角色，將初期蒸鍍物質如所希望的形狀般形成圖案。The photolithography process method is characterized in that a pattern is deposited on a substrate as a film to form a target substance, and a polymer material (photoresist or the like) reactive with light is vapor-deposited or coated thereon. . Thereafter, in the case of a positive-type photoresist, a mask which is designed with a desired pattern is used, and after exposing on a high-molecular substance, exposure is performed by using a developer (Developer). A portion of the high molecular material, and a mask shape as designed to form a pattern of a high molecular substance (resist) on the substrate. Exposing the substrate in which the pattern of the polymer material is formed in the etching liquid or the etching gas, and forming the patterned polymer material acts as a mask for the etching liquid or the gas system, and the initial vapor deposition material is as desired. Shaped like a pattern.
然而，習知的光微影術製程係依光的波長而決定極限解析度，因此於現今的技術水準不僅於數十nm之微細圖案的形成中顯現出界限，且因步驟眾多且複雑而需耗費許多製程時間。再者，因基板的大尺寸而需要大型及高價的製程裝備，其會有製造成本提升且對生產性產生不良影響之根本性的問題點。However, the conventional photolithography process determines the limit resolution depending on the wavelength of light, so that the current technical level not only shows a limit in the formation of fine patterns of several tens of nm, but also requires numerous steps and reclamation. It takes a lot of process time. Furthermore, large-scale and high-priced process equipment is required due to the large size of the substrate, which has fundamental problems in that the manufacturing cost is increased and the productivity is adversely affected.
為了克服此既存的光微影術方法之界限，係有各種微影術方法的提案。In order to overcome the boundaries of this existing photolithography method, various lithography methods have been proposed.
該微影術方法之一係壓印微影術之提案，於此圖案形成方法所使用的壓模係可使用光透射率佳的高分子樹脂，而此光透射率佳的高分子樹脂係主要使用道康寧(Dow－Corning)公司的Sylgard(R)184矽酮彈性體套組(以下稱為PDMS)或MINS。One of the lithography methods is a proposal of embossing lithography. The die used in the pattern forming method can use a polymer resin having good light transmittance, and the polymer resin having good light transmittance is mainly Dow-Corning's Sylgard(R) 184 fluorenone elastomer kit (hereinafter referred to as PDMS) or MINS was used.
第1圖係概略地顯示用於習知的壓模(imprint)微影術的壓模之製作方法之製程順序圖。Fig. 1 is a process sequence diagram schematically showing a method of manufacturing a stamper for a conventional imprint lithography.
首先，如第1圖所示，將尚未硬化的高分子樹脂102a注入原版模具101中並硬化，以轉印原版模具101之圖案。First, as shown in Fig. 1, the polymer resin 102a which has not been hardened is injected into the original mold 101 and hardened to transfer the pattern of the original mold 101.
其次，自前述原版模具101分離已硬化的高分子樹脂模具102b。Next, the hardened polymer resin mold 102b is separated from the original mold 101.
形成圖案且於高分子樹脂模具102b之裡表面附加上防止高分子樹脂模具102b收縮及鬆弛的背面支持體103，藉此可製作接著或黏著有背面支持體之壓模104。此背面支持體之材料，係使用玻璃基板(素玻璃，Bare Glass)、環烯烴共聚物(COC，Cyclic olefin copolymer)、聚丙烯酸酯(PAc，Polyacrylate)、聚碳酸酯(PC，Polycarbonate)、聚乙烯(PE，Polyethylene)、聚醚醚酮(PEEK，Polyetheretherketone)、聚醚醯亞胺(PEI，Polyetherimide)、聚萘二甲酸乙二酯(PEN，Polyethylenenaphthalate)、聚醚碸(PES，Polyethersulfone)、聚對苯二甲酸乙二酯(PET，Polyethyleneterephtalate)、聚醯亞胺(PI，Polyimide)、聚烯烴(PO，Polyolefin)、聚甲基丙烯酸甲酯(PMMA，Polymethylmethacrylate)、聚碸(PSF，Polysulfone)、聚乙烯醇(PVA，Polyvinylalcohol)、聚乙烯肉桂酸酯(PVCi，Polyvinylcinnamate)、三乙醯纖維素(TAC，Triacetylcellulose)、聚矽氧(Poly Silicone)、聚胺基甲酸酯(Polyurethane)、環氧樹脂(Epoxy Resin)及其化合物等光透射率佳的材料。如此製作的接著或黏著有背面支持體之壓模104係可確保圖案之均勻度。By forming a pattern and attaching the back surface support body 103 which prevents shrinkage and slack of the polymer resin mold 102b to the inner surface of the polymer resin mold 102b, the stamper 104 which adheres or adheres the back surface support body can be manufactured. The material of the back support is a glass substrate (Bare Glass), a cyclic olefin copolymer (COC), a polyacrylate (PAc, Polyacrylate), a polycarbonate (PC, Polycarbonate), and a poly Ethylene (PE, Polyethylene), polyetheretherketone (PEEK, Polyetheretherketone), polyetherimine (PEI, Polyetherimide), polyethylene naphthalate (PEN, Polyethylenenaphthalate), polyether oxime (PES, Polyethersulfone), Polyethylene terephthalate (PET, Polyethylene terephate), Polyimide (PI, Polyimide), Polyolefin (PO, Polyolefin), Polymethylmethacrylate (PMMA, Polymethylmethacrylate), Polyfluorene (PSF, Polysulfone) ), polyvinyl alcohol (PVA, Polyvinylalcohol), polyvinyl cinnamate (PVCi, Polyvinylcinnamate), triacetyl cellulose (TAC, Triacetyl cellulose), polysilicone (Poly Silicone), polyurethane (Polyurethane) Epoxy Resin and its compounds are excellent in light transmittance. The stamper 104 thus produced or adhered to the back support ensures the uniformity of the pattern.
第2圖係概略地顯示藉由既存方式之利用壓模的圖案形成方法之製程順序圖。Fig. 2 is a view schematically showing a process sequence diagram of a pattern forming method using a stamper by an existing method.
首先，第2圖係於玻璃基板105上塗布供形成圖案的聚合物106a後，將供形成圖案的聚合物106a壓至已形成圖案的壓模104上，以將接著或黏著有背面支持體之中間壓模104的圖案轉印至供形成圖案的聚合物106a上。First, after coating the patterned polymer 106a on the glass substrate 105, the patterned polymer 106a is pressed onto the patterned stamper 104 to adhere or adhere the back support. The pattern of the intermediate stamper 104 is transferred onto the patterned polymer 106a.
其次，以紫外線(UV)照射供形成圖案的聚合物106a以使其硬化後，並分離接著或黏著有背面支持體之壓模104，即於基板上完成了形成有圖案的聚合物106b。Next, the patterned polymer 106a is irradiated with ultraviolet rays (UV) to harden it, and the stamper 104 with or without the back support is separated, that is, the patterned polymer 106b is completed on the substrate.
然而，大部分的高分子樹脂102b之材料係屬非導體。將接著或黏著有背面支持體微影術用壓模104與供形成圖案的聚合物106a互相接觸，則帶(－)電的電子會自兩者的材料之分子於分子自由移動，而當接觸的微影術用高分子樹脂模具與供形成圖案的聚合物一分離，一側的材料獲得電子而帶(－)電，另一側的材料則失去電子而帶(＋)電。因非導體難以移動電子，一旦帶電之後會難以消除靜電。因此，於接著或黏著有背面支持體微影術用壓模104之表面上所留有的靜電會產生引起放電及使供形成圖案的聚合物106a下方的基板105之矽氧化膜及金屬電路損傷之故障原因。再者，靜電會扮演於接著或黏著有背面支持體之壓模104之表面吸引異物的角色，而每每於進行製程時繼續使各種塵埃流入並累積。However, most of the material of the polymer resin 102b is a non-conductor. The adhesive film 104 with the back support lithography is then brought into contact with the patterned polymer 106a, and the electrons with (-) electricity are free to move from the molecules of the materials of the two molecules, and when contacted The lithography uses a polymer resin mold to separate from the pattern-forming polymer. One side of the material acquires electrons with (-) electricity, and the other side of the material loses electrons with (+) electricity. Since it is difficult for non-conductors to move electrons, it is difficult to eliminate static electricity once charged. Therefore, the static electricity remaining on the surface of the stamper 104 for the back support lithography is caused to cause discharge and damage to the oxide film and the metal circuit of the substrate 105 under the polymer 106a for patterning. The cause of the malfunction. Further, static electricity acts as a function of attracting foreign matter on the surface of the stamper 104 to which the back support is adhered or adhered, and continues to cause various dust to flow in and accumulate during the process.
因此，於利用壓模的壓印微影術製程之中係要求能夠去除及遮蔽靜電的方法。Therefore, in the imprint lithography process using a stamper, a method capable of removing and shielding static electricity is required.
作為解決如前述習知技術之問題點之方法，本發明之目的係提供一種即使於反覆實行壓印微影術製程中，仍可去除或遮蔽靜電，且可防止異物附著並防止圖案損毀的壓印微影術用壓模及利用其之壓印微影術方法。As a method for solving the problems of the prior art, the object of the present invention is to provide a pressure which can remove or shield static electricity even when the imprint lithography process is repeatedly performed, and can prevent foreign matter from adhering and prevent pattern damage. Stamping lithography and its embossing lithography method.
為了實現前述目的，本發明係提供一種壓印微影術用壓模，其特徵為包含有：於一面形成有用以形成圖案之凹凸的高分子樹脂模具；及附著於前述高分子樹脂模具之一面的相反面，且具有光透射性與傳導性之背面支持體。In order to achieve the above object, the present invention provides a stamper for embossing lithography, comprising: a polymer resin mold having a concave portion formed on one surface to form a pattern; and a surface of the polymer resin mold attached thereto The opposite side, and has a light-transmitting and conductive back support.
再者，本發明亦提供一種壓印微影術方法，其特徵在於包含有：於基板上以感光性物質形成被加工層之步驟；準備前述壓印微影術用壓模之步驟；使前述壓印微影術用壓模接觸前述被加工層之步驟；照射光線而將前述被加工層硬化之步驟；及使前述壓印微影術用壓模自前述被加工層分離之步驟。Furthermore, the present invention also provides an imprint lithography method, comprising: a step of forming a processed layer with a photosensitive material on a substrate; and preparing a stamper for the embossing lithography; a step of embossing lithography with a stamper contacting the processed layer; a step of hardening the processed layer by irradiating light; and a step of separating the stamping lithography stamper from the processed layer.
藉由本發明之壓印微影術用壓模及利用其之壓印微影術方法，會具有可去除及防止於利用壓印微影術用壓模之壓模製程中所產生的靜電，且抑制產生異物吸附於壓印微影術用壓模之表面上的情形之效果，並具有防止因累積的靜電電壓產生的放電所引起的基板之金屬電路或是圖案的損傷，以使製程效率提升之效果。The stamper for imprint lithography according to the present invention and the imprint lithography method therewith have electrostatic properties which can be removed and prevented from being generated in a stamper process using a stamper for imprint lithography, and It suppresses the effect of the foreign matter adsorbing on the surface of the stamper for imprint lithography, and has the damage of the metal circuit or the pattern of the substrate caused by the discharge caused by the accumulated electrostatic voltage, so that the process efficiency is improved. The effect.
以下，参考圖式而針對本發明詳細說明。Hereinafter, the present invention will be described in detail with reference to the drawings.
本發明係有關於一種壓印微影術用模具，係於壓印微影術用壓模中，包含有於一面形成有用於形成圖案之凹凸的高分子樹脂模具102b，及附著於前述高分子樹脂模具102b之一面之相反面，且具有光透射性與傳導性之背面支持體而構成。The present invention relates to a mold for embossing lithography, which is used in a stamper for embossing lithography, comprising a polymer resin mold 102b formed with a concave-convex pattern for forming a pattern on one surface, and attached to the polymer The back surface of the resin mold 102b is opposite to the surface, and has a light-transmitting and conductive back support.
以下，参考圖式而針對本發明詳細說明。Hereinafter, the present invention will be described in detail with reference to the drawings.
第3圖係概略表示有關於依據本發明之壓印微影術壓模的製作方法之一實施形態的製程順序圖，如第3圖所示，將未硬化的高分子樹脂102a注入至原版模具101，並轉印原版模具101之圖案。接著，使經硬化的高分子樹脂(以下稱為高分子樹脂)102b自前述原版模具101分離。於形成有圖案的高分子樹脂模具102b之裡表面，附加上用於防止高分子樹脂模具102b收縮及鬆弛之背面支持體103，藉此可製作壓印微影術用壓模104。如此的前述背面支持體103於第3圖中係於背面支持體之上部及下部塗布或蒸鍍光透射率高的高導電度材料而完成背面支持體者。依此製作的壓印微影術用壓模係具有如第4圖所示之結構。但，其僅為顯示本發明之壓印微影術用壓模的一實施形態者。Figure 3 is a schematic view showing a process sequence diagram relating to an embodiment of a method for fabricating an imprint lithography stamper according to the present invention. As shown in Fig. 3, an unhardened polymer resin 102a is injected into a master mold. 101, and transfer the pattern of the original mold 101. Next, the cured polymer resin (hereinafter referred to as polymer resin) 102b is separated from the master mold 101. The back surface support 103 for preventing shrinkage and slack of the polymer resin mold 102b is attached to the inner surface of the polymer resin mold 102b on which the pattern is formed, whereby the stamper 104 for imprint lithography can be produced. In the third embodiment, the back surface support is completed by coating or vapor-depositing a high-conductivity material having a high light transmittance in the upper portion and the lower portion of the back support. The stamper for imprint lithography thus produced has a structure as shown in Fig. 4. However, it is only one embodiment showing the stamper for imprint lithography of the present invention.
此外，前述背面支持體係具有光透射性與傳導性，且於其包含有容易進行圖案形成及電荷放電的各種結構，藉此將於高分子樹脂模具中停滯的靜電放電，前述背面支持體係較佳可舉例如a)於550nm波長時透射率至少為80%之材質中包含有具有光透射性與傳導性之物質者；或者是b)塗布有附著成為膜形態之具有光透射性與傳導性之物質在於550nm波長時透射率至少為80%之材質者，或者是c)於前述a)上塗布有附著成為膜形態之具有光透射性與傳導性之物質者。換言之，前述於550nm波長時透射率至少為80%者為了在壓模時以曝光過程進行適當硬化之透射率而以保障於前述範圍者為佳，且前述傳導性係可僅具有可將背面支持體之靜電荷排出的傳導性即足夠，有關其之具體範圍係電阻率為0.1 Ω m以下為佳。Further, the back support system has light transmissivity and conductivity, and includes various structures which are easy to perform pattern formation and charge discharge, whereby electrostatic discharge which is stagnant in the polymer resin mold is preferable, and the back support system is preferably used. For example, a) a material having a transmittance of at least 80% at a wavelength of 550 nm includes a material having light transmissivity and conductivity; or b) a film having a light transmission and conductivity attached to a film form. The material is a material having a transmittance of at least 80% at a wavelength of 550 nm, or c) is coated with a substance having light transmissivity and conductivity attached to the film form in the above a). In other words, it is preferable that the transmittance is at least 80% at a wavelength of 550 nm in order to secure the transmittance in the exposure process by the exposure process, and the above-mentioned conductivity may have only the back support. The conductivity of the static charge discharge of the body is sufficient, and the specific range thereof is preferably 0.1 Ω m or less.
更佳地，前述具有光透射性與傳導性之物質以傳導性高分子或傳導性金屬氧化物為佳，與其有關的具體例，前述傳導性高分子可舉聚乙撐二氧噻吩(PEDOT)、PODET、聚乙炔(Polyacetylene)、聚苯胺(Polyaniline)、或聚吡咯(Polypyrrole)等為例；前述傳導性金屬氧化物可舉銦錫氧化物(ITO，Indium Tin Oxide)、銦鋅氧化物(IZO，Indium Zinc Oxide)、或是銦鋅錫氧化物(IZTO，Indium Zinc Tin Oxide)等為例。藉此可進行電荷之快速傳遞。More preferably, the material having light transmissivity and conductivity is preferably a conductive polymer or a conductive metal oxide. Specific examples thereof include polyethylenedioxythiophene (PEDOT). For example, PODET, polyacetylene, polyaniline, or polypyrrole; and the conductive metal oxides include indium tin oxide (ITO), indium zinc oxide (ITO). IZO, Indium Zinc Oxide, or Indium Zinc Tin Oxide, for example. Thereby, a rapid transfer of electric charge can be performed.
再者，前述於550nm波長時透射率至少為80%之材質係可舉例如玻璃、環烯烴共聚物(COC，Cyclic olefin copolymer)、聚丙烯酸酯(PAc，Polyacrylate)、聚碳酸酯(PC，Polycarbonate)、聚乙烯(PE，Polyethylene)、聚醚醚酮(PEEK，Polyetheretherketone)、聚醚醯亞胺(PEI，Polyetherimide)、聚萘二甲酸乙二酯(PEN，Polyethylenenaphthalate)、聚醚碸(PES，Polyethersulfone)、聚對苯二甲酸乙二酯(PET，Polyethyleneterephtalate)、聚醯亞胺(PI，Polyimide)、聚烯烴(PO，Polyolefin)、聚甲基丙烯酸甲酯(PMMA，Polymethylmethacrylate)、聚碸(PSF，Polysulfone)、聚乙烯醇(PVA，Polyvinylalcohol)、聚乙烯肉桂酸酯(PVCi，Polyvinylcinnamate)、三乙醯纖維素(TAC，Triacetylcellulose)、聚矽氧(Poly Silicone)、聚胺基甲酸酯(Polyurethane)、或者是環氧樹脂(Epoxy Resin)材料之化合物的透明材質者。Further, the material having a transmittance of at least 80% at a wavelength of 550 nm may, for example, be glass, a cyclic olefin copolymer (COC), a polyacrylate (PAc), or a polycarbonate (PC, Polycarbonate). ), polyethylene (PE, Polyethylene), polyether ether ketone (PEEK, Polyetheretherketone), polyether phthalimide (PEI, Polyetherimide), polyethylene naphthalate (PEN, Polyethylenenaphthalate), polyether oxime (PES, Polyethersulfone), polyethylene terephthalate (PET, Polyethylene terephate), polyimine (PI, Polyimide), polyolefin (PO, Polyolefin), polymethyl methacrylate (PMMA, Polymethylmethacrylate), polyfluorene (Polyether) PSF, Polysulfone), polyvinyl alcohol (PVA, Polyvinylalcohol), polyvinyl cinnamate (PVCi, Polyvinylcinnamate), triacetyl cellulose (TAC, Triacetyl cellulose), polysilicone (Poly Silicone), polyurethane (Polyurethane), or a transparent material of a compound of an epoxy resin (Epoxy Resin) material.
與其有關的具體例係如以下各別舉例。Specific examples related thereto are exemplified below.
首先，a)於550nm波長時透射率至少為80%之材質中包含有具有光透射性與傳導性之物質，其具體例係可舉例如包含有前述傳導性高分子(聚乙撐二氧噻吩(PEDOT)、PODET、聚乙炔、聚苯胺、或聚吡咯等)或是傳導性金屬氧化物(銦錫氧化物(ITO，Indium Tin Oxide)、銦鋅氧化物(IZO，Indium Zinc Oxide)、或銦鋅錫氧化物(IZTO，Indium Zinc Tin Oxide))之玻璃(素玻璃)、環烯烴共聚物(COC，Cyclic olefin copolymer)、聚丙烯酸酯(PAc，Polyacrylate)、聚碳酸酯(PC，Polycarbonate)、聚乙烯(PE，Polyethylene)、聚醚醚酮(PEEK，Polyetheretherketone)、聚醚醯亞胺(PEI，Polyetherimide)、聚萘二甲酸乙二酯(PEN，Polyethylenenaphthalate)、聚醚碸(PES，Polyethersulfone)、聚對苯二甲酸乙二酯(PET，Polyethyleneterephtalate)、聚醯亞胺(PI，Polyimide)、聚烯烴(PO，Polyolefin)、聚甲基丙烯酸甲酯(PMMA，Polymethylmethacrylate)、聚碸(PSF，Polysulfone)、聚乙烯醇(PVA，Polyvinylalcohol)、聚乙烯肉桂酸酯(PVCi，Polyvinylcinnamate)、三乙醯纖維素(TAC，Triacetylcellulose)、聚矽氧(Poly Silicone)、聚胺基甲酸酯(Polyurethane)、或者是環氧樹脂(Epoxy Resin)材料之化合物。前述具有光透射性與傳導性之物質之混合比例係可在具有適當傳導性之範圍內自由地變化，有關其之具體例係熟習此技藝者可在0.01重量%~99.99重量%之範圍內任意調節。First, a) a material having a transmittance of at least 80% at a wavelength of 550 nm includes a material having light transmissivity and conductivity, and specific examples thereof include the above-mentioned conductive polymer (polyethylene dioxythiophene). (PEDOT), PODET, polyacetylene, polyaniline, or polypyrrole, etc.) or conductive metal oxide (ITO, Indium Tin Oxide, Indium Zinc Oxide, or Glass of indium zinc tin oxide (IZTO, Indium Zinc Tin Oxide), cyclic olefin copolymer (COC, Cyclic olefin copolymer), polyacrylate (PAc, Polyacrylate), polycarbonate (PC, Polycarbonate) , polyethylene (PE, Polyethylene), polyetheretherketone (PEEK, Polyetheretherketone), polyether phthalimide (PEI, Polyetherimide), polyethylene naphthalate (PEN, Polyethylenenaphthalate), polyether oxime (PES, Polyethersulfone) ), polyethylene terephthalate (PET, Polyethylene terephate), polyimine (PI, Polyimide), polyolefin (PO, Polyolefin), polymethyl methacrylate (PMMA, Polymethylmethacrylate), polyfluorene (PSF) , Polysulfone), polyvinyl alcohol (PV A, Polyvinylalcohol), Polyvinylcinnamate (PVCi, Polyvinylcinnamate), Triacetyl cellulose (TAC, Triacetyl), Poly Silicone, Polyurethane, or Epoxy resin (Epoxy Resin) a compound of a material. The mixing ratio of the above-mentioned material having light transmissivity and conductivity can be freely changed within a range having appropriate conductivity, and a specific example thereof can be arbitrarily selected from the range of 0.01% by weight to 99.99% by weight. Adjustment.
包含入前述具有光透射性與傳導性之物質之方法於此係適用包含有單純的混合、導線形態之挿入、積層等眾所皆知之多種方法。The method of incorporating the above-mentioned material having light transmissivity and conductivity is applicable to various methods including simple mixing, insertion of a wire form, and lamination.
其次，b)塗布有附著成為膜形態之具有光透射性與傳導性之物質在於550nm波長時透射率至少為80%之材質者之具體例，係可舉例如於由玻璃(素玻璃)、環烯烴共聚物(COC，Cyclic olefin copolymer)、聚丙烯酸酯(PAc，Polyacrylate)、聚碳酸酯(PC，Polycarbonate)、聚乙烯(PE，Polyethylene)、聚醚醚酮(PEEK，Polyetheretherketone)、聚醚醯亞胺(PEI，Polyetherimide)、聚萘二甲酸乙二酯(PEN，Polyethylenenaphthalate)、聚醚碸(PES，Polyethersulfone)、聚對苯二甲酸乙二酯(PET，Polyethyleneterephtalate)、聚醯亞胺(PI，Polyimide)、聚烯烴(PO，Polyolefin)、聚甲基丙烯酸甲酯(PMMA，Polymethylmethacrylate)、聚碸(PSF，Polysulfone)、聚乙烯醇(PVA，Polyvinylalcohol)、聚乙烯肉桂酸酯(PVCi，Polyvinylcinnamate)、三乙醯纖維素(TAC，Triacetylcellulose)、聚矽氧(Poly Silicone)、聚胺基甲酸酯(Polyurethane)、或環氧樹脂(Epoxy Resin)材料之化合物所形成之板上，如第4圖所示般於上板或是下板上塗布前述傳導性高分子(聚乙撐二氧噻吩(PEDOT)、PODET、聚乙炔、聚苯胺、或是聚吡咯等)或傳導性金屬氧化物(銦錫氧化物(ITO，Indium Tin Oxide)、銦鋅氧化物(IZO，Indium Zinc Oxide)、或是銦鋅錫氧化物(IZTO，Indium Zinc Tin Oxide))而附著成為膜形態以製作者。特別是，於前述傳導性金屬化合物之情形中，較佳是以蒸鍍或是濺鍍進行該塗布；於傳導性高分子之情形係不限於塗布，而可附著成為膜形態。Next, b) a specific example in which a material having light transmissivity and conductivity attached to a film form and having a transmittance of at least 80% at a wavelength of 550 nm is applied, for example, a glass (primary glass) or a ring Olefin copolymer (COC, Cyclic olefin copolymer), polyacrylate (PAc, Polyacrylate), polycarbonate (PC, Polycarbonate), polyethylene (PE, Polyethylene), polyetheretherketone (PEEK, Polyetheretherketone), polyether oxime Imine (PEI, Polyetherimide), polyethylene naphthalate (PEN, Polyethylenenaphthalate), polyether oxime (PES, Polyethersulfone), polyethylene terephthalate (PET, Polyethylene terephtalate), polyimine (PI , Polyimide), Polyolefin (PO, Polyolefin), Polymethylmethacrylate (PMMA, Polymethylmethacrylate), Polyfluorene (PSF, Polysulfone), Polyvinyl Alcohol (PVA, Polyvinylalcohol), Polyvinyl Cinnamate (PVCi, Polyvinylcinnamate) a plate formed of a compound of a material such as TAC (Triacetyl), Poly Silicone, Polyurethane, or Epoxy Resin. Coating the conductive polymer (polyethylenedioxythiophene (PEDOT), PODET, polyacetylene, polyaniline, or polypyrrole, etc.) or conductive metal on the upper or lower plate as shown in Fig. 4. Oxide (Indium Tin Oxide, Indium Zinc Oxide, Indium Zinc Oxide, or Indium Zinc Tin Oxide) is attached to form a film to be produced. By. In particular, in the case of the above-mentioned conductive metal compound, the coating is preferably carried out by vapor deposition or sputtering; in the case of a conductive polymer, it is not limited to coating, but may be attached to a film form.
與其有關的更進一步的具體例，係可舉例如1)於先將與前述高分子樹脂模具黏著及接著的背面支持體橫置時，於背面支持體的下部以銦錫氧化物(ITO，Indium Tin Oxide)塗布全表面的玻璃；或是2)於先將與前述高分子樹脂模具黏著及接著的背面支持體橫置時，於背面支持體之一部分或是全部以ITO塗布的玻璃；或是3)於前述背面支持體上以光透射率高的高導電度的傳導性高分子塗布一部分或是全部塗布的玻璃；或是4)由在由非傳導性透明材質所形成的板上塗布傳導性物質或附著膜者所構成的板。Further, specific examples thereof include, for example, 1) in the case where the back surface support is adhered to the polymer resin mold and then the back support is placed in the lower portion of the back support with indium tin oxide (ITO, Indium). Tin Oxide) coating the entire surface of the glass; or 2) partially or completely ITO coated glass on the back support when the back support is adhered to the polymer resin mold; 3) coating a part or all of the coated glass on the back support with a high conductivity conductive polymer having a high light transmittance; or 4) applying a conductive coating on a plate formed of a non-conductive transparent material. A substance or a board composed of a film attached to it.
換言之，首先，1)將形成有前述圖案的高分子樹脂模具與背面支持體橫置時，並於以使在背面支持體下部蒸鍍有ITO之部分黏著及接著者來構成的情形中，如第5圖所示之於藉由本發明之壓印微影術用壓模製造過程中於具有圖案形狀的高分子樹脂之裡表面使用蒸鍍有ITO之背面支持體來形成圖案的方法之製程順序圖般進行製程。In other words, in the case where the polymer resin mold having the pattern described above is placed transversely to the back support, and the portion in which the ITO is deposited on the lower portion of the back support is adhered and attached, FIG. 5 is a view showing a process sequence of a method of forming a pattern by using a back surface support on which an ITO is deposited on a surface of a polymer resin having a pattern shape in a stamper manufacturing process for imprint lithography according to the present invention. The process is done as usual.
首先，第5圖係於玻璃基板105上塗布供形成圖案的聚合物106a後，於將形成有圖案的高分子樹脂102b與黏著及接著之背面支持體橫置時，以由於背面支持體之下部103a以ITO塗布全表面之背面支持體103所形成之壓模104壓至供形成圖案的聚合物106a，而將壓印微影術用壓模104之圖案轉印至聚合物106a上。此時，蒸鍍於前述背面支持體103之下部103a之ITO會誘導靜電而去除靜電。First, in the fifth drawing, after the polymer 106a for patterning is applied onto the glass substrate 105, when the polymer resin 102b on which the pattern is formed and the adhesive support and the back support are placed transversely, the lower portion of the back support is used. The stamper 104 formed of the back surface support 103 coated with the ITO coated full surface is pressed to the polymer 106a for pattern formation, and the pattern of the stamper 104 for imprint lithography is transferred onto the polymer 106a. At this time, the ITO vapor-deposited on the lower portion 103a of the back surface support 103 induces static electricity to remove static electricity.
其次，藉由光線照射進行硬化步驟，而在UV硬化步驟一結束，隨即使壓印微影術用壓模104與形成有圖案聚合物106b分離。此時，蒸鍍於前述背面支持體103之下部103a的ITO會誘導靜電而去除靜電。藉此可防止圖案的毀損，並防止於模具上附著異物。Next, the hardening step is performed by light irradiation, and at the end of the UV hardening step, even if the imprint lithography stamper 104 is separated from the patterned polymer 106b. At this time, the ITO vapor-deposited on the lower portion 103a of the back surface support 103 induces static electricity to remove static electricity. This prevents damage to the pattern and prevents foreign matter from adhering to the mold.
接下來，2)當將前述玻璃(Glass)背面支持體橫置時之i)於上部103b蒸鍍ITO；ii)於上部103a或下部103b之一面以上蒸鍍ITO；iii)於上部103a或下部103b之一面以上部分地蒸鍍ITO之情形係可藉由與前述相同的方法來進行。Next, 2) i) evaporating ITO on the upper portion 103b when the glass back support is horizontally placed; ii) vapor-depositing ITO on one side of the upper portion 103a or the lower portion 103b; iii) on the upper portion 103a or lower portion The case where the ITO is partially vapor-deposited on one side or more of 103b can be carried out by the same method as described above.
再者，為了得到前述背面支持體之高傳導度及放電性，較佳可蒸鍍銦錫氧化物(ITO，Indium Tin Oxide)、銦鋅氧化物(IZO，Indium Zinc Oxide)、銦鋅錫氧化物(IZTO，Indium Zinc Tin Oxide)等光透射率高且導電度高者其中之一。Further, in order to obtain high conductivity and discharge property of the back support, it is preferred to vaporize indium tin oxide (ITO, Indium Tin Oxide), indium zinc oxide (IZO, Indium Zinc Oxide), indium zinc tin oxide. (IZTO, Indium Zinc Tin Oxide) is one of high light transmittance and high conductivity.
再者，於其他的背面支持體，在3)於前述玻璃(Glass)背面支持體103之i)上部103a或下部103b之一面或兩面以光透射率高且導電度高的傳導性高分子塗布全表面；ii)於上部103a或下部103b之一面以上蒸鍍傳導性高分子；iii)於上部103a或下部103b之一面以上部分地蒸鍍傳導性高分子的情形中係可以與前述相同的方法進行圖案形成。Further, in the other back support, 3) one or both surfaces of the upper portion 103a or the lower portion 103b of the glass back surface support 103 are coated with a conductive polymer having high light transmittance and high conductivity. The entire surface; ii) vapor-depositing the conductive polymer on one surface of the upper portion 103a or the lower portion 103b; iii) in the case where a conductive polymer is partially deposited on one surface of the upper portion 103a or the lower portion 103b, the same method as described above may be employed. Patterning is performed.
最後，4)於由非傳導性透明材質所形成之板上塗布傳導性物質或附著膜之情形係，於由玻璃(素玻璃)、環烯烴共聚物(COC，Cyclic olefin copolymer)、聚丙烯酸酯(PAc，Polyacrylate)、聚碳酸酯(PC，Polycarbonate)、聚乙烯(PE，Polyethylene)、聚醚醚酮(PEEK，Polyetheretherketone)、聚醚醯亞胺(PEI，Polyetherimide)、聚萘二甲酸乙二酯(PEN，Polyethylenenaphthalate)、聚醚碸(PES，Polyethersulfone)、聚對苯二甲酸乙二酯(PET，Polyethyleneterephtalate)、聚醯亞胺(PI，Polyimide)、聚烯烴(PO，Polyolefin)、聚甲基丙烯酸甲酯(PMMA，Polymethylmethacrylate)、聚碸(PSF，Polysulfone)、聚乙烯醇(PVA，Polyvinylalcohol)、聚乙烯肉桂酸酯(PVCi，Polyvinylcinnamate)、三乙醯纖維素(TAC，Triacetylcellulose)、聚矽氧(Poly Silicone)、聚胺基甲酸酯(Polyurethane)、環氧樹脂(Epoxy Resin)材料之透明材質所形成之背面支持體上，以前述之傳導性物質塗布之板的情形，可藉此以與前述相同的方法進行圖案形成。又，為了得到前述背面支持體之高傳導度及放電性，較佳係蒸鍍光透射率高且導電度高的ITO、IZO、IZTO類之中的任一者，或是將光透射率高且導電度高的傳導性高分子塗布或附著成為膜形態。Finally, 4) the case where a conductive substance or an adhesive film is coated on a plate formed of a non-conductive transparent material, is a glass (a glass), a cyclic olefin copolymer (COC), a polyacrylate. (PAc, Polyacrylate), Polycarbonate (PC, Polycarbonate), Polyethylene (PE, Polyethylene), Polyetheretherketone (PEEK, Polyetheretherketone), Polyetherimide (PEI, Polyetherimide), Polyethylene naphthalate Ester (PEN, Polyethylenenaphthalate), polyether oxime (PES, Polyethersulfone), polyethylene terephthalate (PET, Polyethylene terephtalate), polyimine (PI, Polyimide), polyolefin (PO, Polyolefin), polymethyl Methyl methacrylate (PMMA, Polymethylmethacrylate), polyfluorene (PSF, Polysulfone), polyvinyl alcohol (PVA, Polyvinylalcohol), polyvinyl cinnamate (PVCi, Polyvinylcinnamate), triacetyl cellulose (TAC, Triacetyl cellulose), poly a backing support formed of a transparent material of a polysilicone, a polyurethane or an epoxy resin (Epoxy Resin), coated with a conductive material as described above , Can use this pattern to the same method. Further, in order to obtain high conductivity and discharge property of the back support, it is preferable to use either ITO, IZO, or IZTO having high vapor transmission transmittance and high conductivity, or to have high light transmittance. Further, the conductive polymer having high conductivity is coated or adhered to a film form.
最後，c)於前述a)上塗布有附著成為膜形態之具有光透射性與傳導性之物質者之情形，係於前述a)之形態所構成之支持體上以如前述b)般的方式將具有光透射性與傳導性之物質塗布或附著成為膜形態，與其有關的具體例係包含由光透射率高且導電度高的傳導性高分子，例如聚乙撐二氧噻吩(PEDOT)、PODET、聚乙炔、聚苯胺、或是聚吡咯等，具體舉例則可舉例如於由環烯烴共聚物(COC，Cyclic olefin copolymer)、聚丙烯酸酯(PAc，Polyacrylate)、聚碳酸酯(PC，Polycarbonate)、聚乙烯(PE，Polyethylene)、聚醚醚酮(PEEK，Polyetheretherketone)、聚醚醯亞胺(PEI，Polyetherimide)、聚萘二甲酸乙二酯(PEN，Polyethylenenaphthalate)、聚醚碸(PES，Polyethersulfone)、聚對苯二甲酸乙二酯(PET，Polyethyleneterephtalate)、聚醯亞胺(PI，Polyimide)、聚烯烴(PO，Polyolefin)、聚甲基丙烯酸甲酯(PMMA，Polymethylmethacrylate)、聚碸(PSF，Polysulfone)、聚乙烯醇(PVA，Polyvinylalcohol)、聚乙烯肉桂酸酯(PVCi，Polyvinylcinnamate)、三乙醯纖維素(TAC，Triacetylcellulose)、聚矽氧(Poly Silicone)、聚胺基甲酸酯(Polyurethane)、環氧樹脂(Epoxy Resin)材料之透明材質所形成之背面支持體上，將傳導性物質塗布或附著成為膜形態而形成之板，藉由將附著有如此構成之背面支持體的高分子樹脂模具，而可以與前述相同的方法進行圖案形成。又於此，前述塗布或附著成為膜形態之傳導性物質，係如前述般較佳為蒸鍍或濺鍍為了得到前述背面支持體之高傳導度及放電性之光透射率高且導電度高的ITO、IZO、IZTO類之中的任一者，或者將光透射率高且導電度高的聚乙撐二氧噻吩(PEDOT)、PODET、聚乙炔、聚苯胺、或聚吡咯等之傳導性高分子塗布或附著成為膜形態者。Finally, c) is coated on the a) with a material having light transmissivity and conductivity attached to the form of the film, and is attached to the support formed by the form of the above a) in a manner as in the above b) A material having light transmissivity and conductivity is coated or adhered to a film form, and specific examples thereof include a conductive polymer having high light transmittance and high conductivity, such as polyethylene dioxythiophene (PEDOT). PODET, polyacetylene, polyaniline, or polypyrrole, and the like, and specific examples thereof include a cyclic olefin copolymer (COC), a polyacrylate (PAc, Polyacrylate), and a polycarbonate (PC, Polycarbonate). ), polyethylene (PE, Polyethylene), polyether ether ketone (PEEK, Polyetheretherketone), polyether phthalimide (PEI, Polyetherimide), polyethylene naphthalate (PEN, Polyethylenenaphthalate), polyether oxime (PES, Polyethersulfone), polyethylene terephthalate (PET, Polyethylene terephate), polyimine (PI, Polyimide), polyolefin (PO, Polyolefin), polymethyl methacrylate (PMMA, Polymethylmethacrylate), polyfluorene (Polyether) PSF, Polysulfone), polyvinyl alcohol (PVA, Polyvinylalcohol), polyvinyl cinnamate (PVCi, Polyvinylcinnamate), triacetyl cellulose (TAC), polysilicone, polyurethane And a backing support formed of a transparent material of an epoxy resin (Epoxy Resin) material, a plate formed by coating or attaching a conductive material to a film form, and a polymer having the back support thus formed thereon The resin mold can be patterned in the same manner as described above. Further, as described above, the conductive material to be coated or adhered is preferably vapor-deposited or sputtered as described above. In order to obtain high conductivity and discharge property of the back support, light transmittance is high and conductivity is high. Any of ITO, IZO, IZTO, or conductivity of polyethylene dioxythiophene (PEDOT), PODET, polyacetylene, polyaniline, or polypyrrole having high light transmittance and high conductivity The polymer is coated or adhered to form a film.
再者，除此之外，於前述之前述背面支持體上可進一步包含有連結其之放電板或接地線而構成。藉此可有效地放出殘留於背面支持體之靜電。Further, in addition to the above, the back surface support may further include a discharge plate or a ground line connected thereto. Thereby, the static electricity remaining on the back support can be effectively released.
再者，本發明係提供利用如此的本發明壓印微影術用壓模之壓印微影術方法，其例係如第5圖所示，其係於壓印微影術方法中，包含有於基板上以感光性物質形成被加工層之步驟、準備前述之壓印微影術用壓模之步驟、使前述壓印微影術用壓模接觸前述被加工層之步驟、照射光線而硬化前述被加工層之步驟、以及使前述壓印微影術用壓模自前述被加工層分離的步驟而構成，與其有關的說明係如前所述。Furthermore, the present invention provides an imprint lithography method using the stamper for imprint lithography of the present invention, as shown in FIG. 5, which is incorporated in an imprint lithography method, and includes a step of forming a processed layer on a substrate with a photosensitive material, a step of preparing the above-described stamper for imprint lithography, a step of contacting the stamper for imprint lithography with the layer to be processed, and irradiating light The step of hardening the layer to be processed and the step of separating the stamper for stamping lithography from the layer to be processed are as described above.
以下，雖為有助於理解本發明而提示了較佳實施例，但下列實施例僅為例示本發明者，而本發明之範圍當然不為下列實施例所限定。The following examples are merely illustrative of the preferred embodiments, and the following examples are intended to illustrate the invention, and the scope of the invention is of course not limited by the following examples.
實施例1將形成有前述圖案之高分子樹脂模具與作為背面支持體之玻璃(Glass)在橫置狀態下於背面支持體之下部將ITO蒸鍍1500，於以與背面支持體之下部接著之壓印微影術用壓模進行壓印微影術之後，並於使壓印微影術用壓模與形成有圖案的聚合物分離後，以靜電電壓測量器於與壓印微影術用壓模間隔1mm測量靜電電壓。In the first embodiment, the polymer resin mold having the pattern described above and the glass (Glass) as the back support are vapor-deposited 1500 on the lower portion of the back support in the horizontal state. After performing embossing lithography with a stamper for embossing lithography followed by a back support, and separating the embossed lithography stamp from the patterned polymer, electrostatically The voltage measuring device measures the electrostatic voltage at a distance of 1 mm from the stamper for imprint lithography.
實施例2將形成有前述圖案之高分子樹脂模具與作為背面支持體之玻璃(Glass)以橫置狀態於背面支持體之上部將IZO蒸鍍1500，而適當使用與背面支持體之下部接著的壓印微影術用壓模來進行與實施例1相同的過程。In the second embodiment, the polymer resin mold having the pattern described above and the glass (Glass) as the back support are vapor-deposited IZO on the upper portion of the back support in a horizontal state. The same procedure as in Embodiment 1 was carried out by appropriately using a stamper for imprint lithography which was followed by the back support.
實施例3將形成有前述圖案之高分子樹脂模具與作為背面支持體之玻璃(Glass)以橫置狀態於背面支持體之上部將ITO蒸鍍1500，而適當使用與背面支持體之下部接著的壓印微影術用壓模來進行與實施例1相同的過程。In Example 3, the polymer resin mold having the pattern described above and the glass (Glass) as the back support were vapor-deposited 1500 on the upper portion of the back support in a horizontal state. The same procedure as in Embodiment 1 was carried out by appropriately using a stamper for imprint lithography which was followed by the back support.
實施例4於形成有前述圖案之高分子樹脂模具與作為背面支持體之玻璃(Glass)之上下部將ITO蒸鍍1500，而適當使用與背面支持體之下部接著的壓印微影術用壓模來進行與實施例1相同的過程。In Example 4, ITO was vapor-deposited 1500 on the upper surface of the polymer resin mold in which the pattern was formed and the glass (Glass) as the back support. The same procedure as in Embodiment 1 was carried out by appropriately using a stamper for imprint lithography which was followed by the back support.
實施例5於形成有前述圖案之高分子樹脂模具與作為背面支持體之PET之下部將ITO蒸鍍1500，而適當使用與背面支持體之下部接著的壓印微影術用壓模來進行與實施例1相同的過程。Example 5 evaporating ITO on a polymer resin mold having the aforementioned pattern and a lower portion of PET as a back support The same procedure as in Embodiment 1 was carried out by appropriately using a stamper for imprint lithography which was followed by the back support.
實施例6於形成有前述圖案之高分子樹脂模具與作為背面支持體之PET之下部將IZO蒸鍍1500，而適當使用與背面支持體之下部接著的壓印微影術用壓模來進行與實施例1相同的過程。Example 6 vapor-deposited IZO in a polymer resin mold having the aforementioned pattern and a lower portion of PET as a back support. The same procedure as in Embodiment 1 was carried out by appropriately using a stamper for imprint lithography which was followed by the back support.
實施例7於形成有前述圖案之高分子樹脂模具與作為背面支持體之PET之上部將ITO蒸鍍1500，而適當使用與背面支持體之下部接著的壓印微影術用壓模來進行與實施例1相同的過程。Example 7 evaporating ITO on a polymer resin mold having the aforementioned pattern and a PET upper portion as a back support The same procedure as in Embodiment 1 was carried out by appropriately using a stamper for imprint lithography which was followed by the back support.
實施例8於形成有前述圖案之高分子樹脂模具與作為背面支持體之PET之下部蒸鍍聚乙撐二氧噻吩(PEDOT)，而適當使用與背面支持體之下部接著的壓印微影術用壓模來進行與實施例1相同的過程。In Example 8, the polymer resin mold having the pattern described above and the PET vapor-deposited polyethylene dioxythiophene (PEDOT) as the back support were used, and the embossing lithography followed by the back support was suitably used. The same procedure as in Example 1 was carried out using a stamper.
比較例使用與由背面支持體之材料由玻璃(Glass)形成的背面支持體接著的壓印微影術用壓模來進行與實施例1相同的過程。In the comparative example, the same procedure as in Example 1 was carried out using a stamper for imprint lithography followed by a back support formed of glass of a back support.
以如此的實施例及比較例測量靜電電壓之結果，係如下列表1所示。The results of measuring the electrostatic voltage in such an embodiment and a comparative example are shown in Table 1 below.
如前述表1一般，於實施例1至8中，藉由使用含有傳導性物質之背面支持體，測量到靜電電壓為0.0Kv~0.3Kv。相反地，於接著有比較例1之不含傳導性物質的背面支持體的壓印微影術用壓模之情形係測量到20.0Kv之靜電電壓。因此，可確認使用於全表面或一部分表面蒸鍍或塗布有傳導性物質之背面支持體的壓印微影術用壓模，其靜電除去能力係非常卓越。As described in the above Table 1, in Examples 1 to 8, the electrostatic voltage was measured to be 0.0 Kv to 0.3 Kv by using the back support containing a conductive material. On the contrary, an electrostatic voltage of 20.0 KV was measured in the case of a stamper for imprint lithography followed by the back support having no conductive material of Comparative Example 1. Therefore, it was confirmed that the stamper for imprint lithography used for vapor deposition or a back surface support coated with a conductive material on the entire surface or a part of the surface is excellent in electrostatic discharge ability.
藉由以上所說明之本發明係當然不為前述實施例及所附之圖式所限定，於不超出申請專利範圍中所記載之本發明的思想及領域範圍內，而可為發明所屬領域中具有通常知識者進行各種修正及變更者亦當然包含在本發明之範圍內。The invention described above is of course not limited by the foregoing embodiments and the accompanying drawings, and may be within the scope of the invention and the scope of the invention as described in the appended claims. It is of course within the scope of the invention to make various modifications and changes to those skilled in the art.
101．．．原版模具101. . . Original mold
102a．．．高分子樹脂102a. . . Polymer resin
102b．．．高分子樹脂模具102b. . . Polymer resin mold
103．．．背面支持體103. . . Back support
103a．．．下部103a. . . Lower part
103b．．．上部103b. . . Upper
104．．．壓模104. . . stamper
105．．．玻璃基板105. . . glass substrate
106a．．．聚合物106a. . . polymer
106b．．．聚合物106b. . . polymer
【第1圖】概略地表示習知的壓印微影術用壓模之製作方法的製程順序圖。[Fig. 1] A process sequence diagram schematically showing a conventional method for producing a stamper for imprint lithography.
【第2圖】概略地表示利用習知的壓印微影術用壓模形成圖案之壓印微影術方法的製程順序圖。[Fig. 2] A process sequence diagram schematically showing an imprint lithography method for forming a pattern by a stamper using a conventional imprint lithography.
【第3圖】概略地表示依據本發明之壓印微影術用壓模之製作方法的製程順序圖。[Fig. 3] A process sequence diagram schematically showing a method of manufacturing a stamper for imprint lithography according to the present invention.
【第4圖】表示對於依據本發明之壓印微影術用壓模之一實施形態之斷面的圖式。Fig. 4 is a view showing a cross section of an embodiment of a stamper for imprint lithography according to the present invention.
【第5圖】表示利用依據本發明之壓印微影術用壓模而形成圖案之方法的製程順序圖。[Fig. 5] A process sequence diagram showing a method of forming a pattern by using a stamper for imprint lithography according to the present invention.
102b．．．高分子樹脂模具102b. . . Polymer resin mold
103．．．背面支持體103. . . Back support
103a．．．下部103a. . . Lower part
103b．．．上部103b. . . Upper
Claims (8)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060116764A KR101322133B1 (en) | 2006-11-24 | 2006-11-24 | Stamp for imprint lithography and imprint lithography method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200834239A TW200834239A (en) | 2008-08-16 |
| TWI440974B true TWI440974B (en) | 2014-06-11 |
Family
ID=39480219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096144560A TWI440974B (en) | 2006-11-24 | 2007-11-23 | Stamp for imprint lithography and imprint lithography method using the same |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101322133B1 (en) |
| CN (1) | CN101187777A (en) |
| TW (1) | TWI440974B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4542167B2 (en) * | 2008-03-31 | 2010-09-08 | 株式会社日立ハイテクノロジーズ | Microstructure transfer device |
| KR101603222B1 (en) * | 2009-07-28 | 2016-03-15 | 엘지디스플레이 주식회사 | Method for Forming Pattern in Flat Panel Display and Apparatus for Forming pattern with Using the Same |
| CN102508410A (en) * | 2011-10-27 | 2012-06-20 | 南京大学 | Composite nanometer impressing mold plate with sandwich structure and preparation method of composite nanometer impressing mold plate |
| CN102361013B (en) * | 2011-11-08 | 2015-05-20 | 无锡瑞威光电科技有限公司 | Method for manufacturing gold salient points on wafer-level flip chip |
| KR101515180B1 (en) * | 2012-05-18 | 2015-04-24 | 주식회사 휴템 | Substrates bonding apparatus unsing fluid pressure and substrates bonding method |
| KR101399440B1 (en) | 2012-06-20 | 2014-05-28 | 한국기계연구원 | Method for making stamp for plasmonic nano lithography apparatus plasmonic nano lithography apparatus |
| CN103360709A (en) * | 2013-06-25 | 2013-10-23 | 辅讯光电工业（苏州）有限公司 | Multifunctional optical film and composite thereof, as well as multifunctional optical plate and manufacturing method thereof |
| JP7027099B2 (en) | 2017-09-29 | 2022-03-01 | キヤノン株式会社 | Manufacturing method of imprint device and goods |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19990010876A (en) * | 1997-07-18 | 1999-02-18 | 김영귀 | Vehicle console box switchgear |
| WO2004063815A2 (en) * | 2001-05-16 | 2004-07-29 | Board Of Regents, The University Of Texas System | Method and system for fabricating nanoscale patterns in light curable compositions using an electric field |
| KR100943561B1 (en) * | 2003-06-03 | 2010-02-22 | 엘지전자 주식회사 | A method of making a wavelength filter |
| KR100601263B1 (en) * | 2003-09-18 | 2006-07-14 | 주식회사 미뉴타텍 | Method for forming micro-pattern by using rapid thermal nano-molding |
-
2006
- 2006-11-24 KR KR1020060116764A patent/KR101322133B1/en active IP Right Grant
-
2007
- 2007-11-23 TW TW096144560A patent/TWI440974B/en not_active IP Right Cessation
- 2007-11-23 CN CNA200710187100XA patent/CN101187777A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| TW200834239A (en) | 2008-08-16 |
| KR20080046986A (en) | 2008-05-28 |
| CN101187777A (en) | 2008-05-28 |
| KR101322133B1 (en) | 2013-10-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI440974B (en) | Stamp for imprint lithography and imprint lithography method using the same | |
| US20150064628A1 (en) | Methods for making micro- and nano-scale conductive grids for transparent electrodes and polarizers by roll to roll optical lithography | |
| WO2014115728A1 (en) | Light-transmitting imprinting mold and method for manufacturing large-area mold | |
| US7776628B2 (en) | Method and system for tone inverting of residual layer tolerant imprint lithography | |
| CN101520600B (en) | Method for preparing transparent nano imprinting template based on X-ray exposure technology | |
| US9551937B2 (en) | Graphene sensor and method of fabricating the same and touch-sensitive display device | |
| KR101468960B1 (en) | Fabrication mehtod of lithography mask and formation method of fine pattern using the same | |
| KR20070051004A (en) | Fabrication method of stamp, fabrication method of thin film transistor and liquid crystal display device by using it | |
| TW201330053A (en) | Process for imprint patterning materials in thin-film devices | |
| US10773427B2 (en) | Roll type imprint master mold, method of manufacturing the same, and imprint method using the same | |
| CN108539054A (en) | The preparation method of cathode insulated column of organic luminous display device | |
| US8932041B2 (en) | Mold structure, patterning method using the same, and method of fabricating liquid crystal display device | |
| KR101367044B1 (en) | Resin mold for imprint lithography and method of preparing the same | |
| US20100193993A1 (en) | Method of making a secondary imprint on an imprinted polymer | |
| US7678626B2 (en) | Method and system for forming a thin film device | |
| KR20170081571A (en) | Method of manufacturing circuit board | |
| CN101825842A (en) | Method for manufacturing nano-imprinting seal | |
| CN103676467A (en) | Metal-embedded mask and method for manufacturing the same | |
| US9536819B2 (en) | Transparent substrate having nano pattern and method of manufacturing the same | |
| KR101467633B1 (en) | Photo Film Mask including DLC pattern and Manufacturing method thereof | |
| KR20080020057A (en) | Preparation method of orientation layer using patterning process | |
| CN105093824B (en) | A kind of large-area nano imprint lithography method of pneumoelectric collaboration | |
| Mohamed et al. | A Three‐Dimensional Ultraviolet Curable Nanoimprint Lithography (3D UV‐NIL) | |
| KR20080025798A (en) | Mold for imprint lithography and imprint lithography method using the same | |
| KR101603222B1 (en) | Method for Forming Pattern in Flat Panel Display and Apparatus for Forming pattern with Using the Same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |