TWI440064B - Scanning electron microscope having secondary electron detecting function - Google Patents
Scanning electron microscope having secondary electron detecting function Download PDFInfo
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- H—ELECTRICITY
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- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
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- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
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- H01J2237/24475—Scattered electron detectors
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- H—ELECTRICITY
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- H01J2237/2448—Secondary particle detectors
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/244—Detection characterized by the detecting means
- H01J2237/24485—Energy spectrometers
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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Description
本發明涉及一種具備反射電子檢測功能的掃描電子顯微鏡,更為詳細地,本發明涉及一種利用維恩過濾器,將從樣品放射的電子分離成二次電子和反射電子並加以檢測的具備反射電子檢測功能的掃描電子顯微鏡。The present invention relates to a scanning electron microscope having a function of detecting reflected electrons. In more detail, the present invention relates to a reflected electron using a Wien filter for separating and detecting electrons emitted from a sample into secondary electrons and reflected electrons. Scanning electron microscope for detection function.
最近不僅是資訊儀器的極小化趨勢,尖端材料領域也是由於極微細技術的產業化,切實要求對於微細構造物或者材料表面形貌的資訊。特別是,從1990年代後半期開始,全世界對於納米的研究活躍起來,隨之展開了查明納米物質結構和特性的各項研究,而電子顯微鏡擔當著重要的作用。Recently, it has not only been the minimization trend of information instruments, but also the field of cutting-edge materials is due to the industrialization of extremely fine technology, and it is necessary to provide information on the microstructure of fine structures or materials. In particular, since the second half of the 1990s, the world's research on nanometers has been active, and various studies have been carried out to identify the structure and properties of nanomaterials, and electron microscopy plays an important role.
近年來,一種掃描電子顯微鏡得到了廣泛的應用,該顯微鏡用1~100nm左右的微細電子線,在二維方向上掃描置於真空中的樣品的表面,並檢測在樣品表面上發生的二次電子的信號,並在陰極線管和螢幕上顯示或記錄經過放大的圖像,以分析樣品形態的微細構造等。In recent years, a scanning electron microscope has been widely used. The microscope scans the surface of a sample placed in a vacuum in a two-dimensional direction with a fine electron beam of about 1 to 100 nm, and detects a secondary occurrence on the surface of the sample. An electronic signal is displayed or recorded on a cathode conduit and a screen to analyze the fine structure of the sample shape.
圖1是表示一種習知掃描電子顯微鏡的圖。如圖1所示,習知掃描電子顯微鏡(10)包括:在真空槍室內掃描原電子(pe)的光源(11);針對從樣品放射出的二次電子(se)的物鏡;和檢測從樣品(S)的表面放射出的二次電子(se)的檢電器(12)。Figure 1 is a diagram showing a conventional scanning electron microscope. As shown in FIG. 1, a conventional scanning electron microscope (10) includes: a light source (11) for scanning a primary electron (pe) in a vacuum gun chamber; an objective lens for secondary electrons (se) emitted from the sample; A secondary electron (se) detector (12) emitted from the surface of the sample (S).
然而,由於原電子(pe)和樣品(S)的入射深度的相互作用,放射出多種形態的電子,而透過檢測從樣品放射的多種形態的電子,應該能夠檢測到樣品的多種特性,但是利用習知掃描電子顯微鏡(10)時只將二次電子(se)用作檢測對象,其他從樣品放射出的電子則無法檢測。However, due to the interaction of the original electron (pe) and the incident depth of the sample (S), a variety of forms of electrons are emitted, and by detecting various forms of electrons radiated from the sample, it is possible to detect various characteristics of the sample, but utilize In the conventional scanning electron microscope (10), only secondary electrons (se) are used as detection targets, and other electrons emitted from the sample cannot be detected.
本發明是鑒於上述問題提出的,其目的在於提供一種具備反射電子檢測功能的掃描電子顯微鏡,該裝置利用維恩過濾器分離二次電子和反射電子並加以檢測。The present invention has been made in view of the above problems, and an object thereof is to provide a scanning electron microscope having a reflection electron detecting function for separating and detecting secondary electrons and reflected electrons by using a Wien filter.
為實現如上所述目的,本發明提供一種具備反射電子檢測功能的掃描電子顯微鏡。本發明具備反射電子檢測功能的掃描電子顯微鏡,將從光源生成的原電子(Primary Electron)入射到樣品,並檢測所述原電子入射後從樣品放射出的放射電子,其特徵在於,包括:維恩過濾器部,其配置在所述光源和樣品之間,並產生磁場和電場,以將所述放射電子分離成二次電子(Secondary Electron)和反射電子(Back Scattered Electron);以及檢測部,分別檢測由所述維恩過濾器分離的二次電子和反射電子。In order to achieve the above object, the present invention provides a scanning electron microscope having a reflected electron detecting function. The present invention includes a scanning electron microscope that reflects an electron detecting function, and a primary electron generated from a light source is incident on a sample, and detects a radioactive electron emitted from the sample after the incident of the original electron, and includes: a filter portion disposed between the light source and the sample, and generating a magnetic field and an electric field to separate the emitted electrons into secondary electrons (Backcontained Electron) and reflected electrons (Back Scattered Electron); and a detecting portion, Secondary electrons and reflected electrons separated by the Wien filter are separately detected.
而且,所述檢測部可以包括:第一檢測部,其配置在所述維恩過濾器部的上側,用於檢測所述二次電子;以及第二檢測部,其配置在所述第一檢測部和所述光源之間,用於檢測所述反射電子。而且,所述第一檢測部的所述二次電子入射側端部的一面或者所述第二檢測部的所述反射電子入射側端部的一面可形成斜面。Moreover, the detecting portion may include: a first detecting portion disposed on an upper side of the Wien filter portion for detecting the secondary electrons; and a second detecting portion configured to be in the first detecting portion Between the portion and the light source for detecting the reflected electrons. Further, one surface of the second electron incident side end portion of the first detecting portion or one surface of the second detecting portion of the reflected electron incident side end portion may form a slope.
而且,所述第一檢測部的二次電子入射側端部和地面所形成的角度可大於所述第二檢測部的反射電子入射側端部和地面所形成的角度。而且,所述檢測部為了將所述二次電子導引至所述第一檢測部側,或者將所述反射電子導引至所述第二檢測部側,可進一步包括從所述第一檢測部或者所述第二檢測部的端部隔離一定間距而配置的電子導引部件。Moreover, an angle formed by the secondary electron incident side end portion of the first detecting portion and the ground may be larger than an angle formed by the incident electron incident side end portion of the second detecting portion and the ground. Further, the detecting unit may further include the first detection from the second detection unit to guide the secondary electrons to the first detection unit side or to guide the reflected electrons to the second detection unit side. The portion of the second detecting portion is isolated from the electron guiding member disposed at a predetermined pitch.
而且,所述檢測部為了防止所述反射電子被所述電子導引部件導向所述第一檢測部側,可進一步包括配置在所述反射電子的移動路徑上的導引防止部件。而且,可進一步包括鏡筒,用於***述光源、所述維恩過濾器部和所述檢測部,並且從所述光源掃描的原電子被射出的端部側隔離在真空狀態下。Further, the detecting unit may further include a guiding preventing member disposed on the moving path of the reflected electrons in order to prevent the reflected electrons from being guided by the electron guiding member to the first detecting portion side. Moreover, a lens barrel may be further included for accommodating the light source, the Wien filter portion, and the detecting portion, and the end side from which the original electrons scanned by the light source are emitted is isolated in a vacuum state.
根據本發明,提供一種具備反射電子檢測功能的掃描電子顯微鏡,其利用維恩過濾器部容易分離從樣品放射出的二次電子和反射電子並分別進行檢測。而且,無需配備額外的結構,使用維恩過濾器也能夠容易分離二次電子及反射電子。而且,能夠同時檢測二次電子和反射電子,以同時了解樣品的表面特性及內部特性。而且,將用於檢測二次電子及反射電子的檢測部配置在鏡筒內,從而能夠實現整體結構的緊湊化。而且,傾斜設置檢測部中電子入射端面,使電子垂直入射,從而能夠提高電子的入射率及樣品特性的測量精密度。According to the present invention, there is provided a scanning electron microscope including a reflected electron detecting function, which is capable of easily separating secondary electrons and reflected electrons emitted from a sample by a Wien filter unit and detecting the respective. Moreover, secondary electrons and reflected electrons can be easily separated using a Wien filter without the need for an additional structure. Moreover, it is possible to simultaneously detect secondary electrons and reflected electrons to simultaneously understand the surface characteristics and internal characteristics of the sample. Further, by arranging the detecting portion for detecting secondary electrons and reflected electrons in the lens barrel, the overall structure can be made compact. Further, the electron incident end surface of the detecting portion is obliquely disposed so that electrons are incident perpendicularly, whereby the electron incidence rate and the measurement precision of the sample characteristics can be improved.
下面進行說明之前需要說明的是,在下述多個實施例中,對於具有相同結構的結構要素,利用相同的符號在第一實施例中代表性地加以說明,並在其餘實施例中只說明不同於第一實施例的結構。下面,參照附圖詳細說明本發明的第一實施例所涉及的具備反射電子檢測功能的掃描電子顯微鏡。It is to be noted that in the following embodiments, structural elements having the same structure are collectively described in the first embodiment with the same reference numerals, and only the differences are explained in the remaining embodiments. The structure of the first embodiment. Hereinafter, a scanning electron microscope having a reflected electron detecting function according to a first embodiment of the present invention will be described in detail with reference to the accompanying drawings.
圖2是本發明的第一實施例所涉及的具備反射電子檢測功能的掃描電子顯微鏡的剖面示意圖。如圖2所示,本發明的具備反射電子檢測功能的掃描電子顯微鏡(100)包括鏡筒(110)、光源(120)、匯聚透鏡(130)、光圈(140)、檢測部(150)、維恩過濾器部(160)、物鏡(170)和樣品支架(180)。2 is a schematic cross-sectional view showing a scanning electron microscope having a reflected electron detecting function according to the first embodiment of the present invention. As shown in FIG. 2, the scanning electron microscope (100) having the reflected electron detecting function of the present invention includes a lens barrel (110), a light source (120), a converging lens (130), an aperture (140), a detecting portion (150), Wien filter section (160), objective lens (170) and sample holder (180).
所述鏡筒(110)是用於將後述的光源(120)、匯聚透鏡(130)、光圈(140)、檢測部(150)、維恩過濾器部(160)和物鏡(170)收容在其內部的外裝材,其中原電子(Primary Electron: pe)射出側的端部即用於配置樣品(S)的樣品支架(180)側的端部維持真空狀態。The lens barrel (110) is for accommodating a light source (120), a condenser lens (130), a diaphragm (140), a detecting portion (150), a Wien filter portion (160), and an objective lens (170), which will be described later, in a housing. The inner exterior material, in which the end of the primary electron (Primary Electron: pe) injection side, that is, the end of the sample holder (180) side for arranging the sample (S), maintains a vacuum state.
所述光源(120)是用於將加熱鏡筒(110)內的陰極而發生的原電子(pe)掃向下方的安裝有樣品(S)的樣品支架(180)側的部件。所述匯聚透鏡(130)是用於將從所述光源(120)射出的原電子(pe)匯聚成一點的部件。所述光圈(140)是用於將透過匯聚透鏡(130)而匯聚的原電子(pe)做成具有一定波長的形態的部件。The light source (120) is a member for scanning the original electron (pe) generated by heating the cathode in the lens barrel (110) downward on the side of the sample holder (180) on which the sample (S) is attached. The converging lens (130) is a member for converging original electrons (pe) emitted from the light source (120) into one point. The aperture (140) is a member for forming a primary electron (pe) condensed by the condensing lens (130) to have a certain wavelength.
所述檢測部(150)是用於檢測原電子(pe)入射後從樣品(S)射出的包括二次電子(Secondary Electron: se)及反射電子(Back Scattered Electron:bse)的放射電子(ee)的部件,該部件包括第一檢測部(151)和第二檢測部(152)。The detecting unit (150) is for detecting a secondary electron (Secondary Electron: se) and a reflected electron (Back Scattered Electron: bse) emitted from the sample (S) after the incident of the original electron (pe) (ee) (ee) A component comprising a first detecting portion (151) and a second detecting portion (152).
所述第一檢測部(151)用於只檢測從樣品(S)放射出的放射電子(ee)中的二次電子(se),其配置在光源(120)和後述的維恩過濾器(160)之間。由於二次電子(se)在從樣品(S)向上移動的途中向側方偏置並射入第一檢測部(151),因此為了使二次電子能夠垂直入射,將第一檢測部(151)的端面做成斜面。The first detecting portion (151) is for detecting only secondary electrons (se) in the emitted electrons (ee) emitted from the sample (S), which are disposed in the light source (120) and a Wien filter (described later) ( 160) between. Since the secondary electrons (se) are laterally biased and incident on the first detecting portion (151) while moving upward from the sample (S), the first detecting portion (151) is provided in order to enable the secondary electrons to be incident perpendicularly. The end face is made into a slope.
第二檢測部(152)用於只檢測從樣品(S)放射出的放射電子(ee)中的反射電子(be),其配置在光源(120)和第一檢測部(151)之間,即配置在第一檢測部(151)的上側。另外,第二檢測部(152)的端面也與上述第一檢測部(151)相同地做成斜面,且由於反射電子(be)的偏置程度比二次電子(se)小,因此第二檢測部的端面傾斜角優選比第一檢測部(151)端面的傾斜角小。The second detecting portion (152) is configured to detect only reflected electrons (be) in the emitted electrons (ee) emitted from the sample (S), which are disposed between the light source (120) and the first detecting portion (151), That is, it is disposed on the upper side of the first detecting unit (151). Further, the end surface of the second detecting portion (152) is also formed as a slope as in the first detecting portion (151), and since the degree of offset of the reflected electrons (be) is smaller than that of the secondary electrons (se), the second The inclination angle of the end surface of the detecting portion is preferably smaller than the inclination angle of the end surface of the first detecting portion (151).
也就是說,第一檢測部(151)中二次電子(se)的入射面和地面所形成的角度(θ1)優選比第二檢測部(152)中反射電子(be)的入射面和地面所形成的角度(θ2)大。That is, the angle (θ1) formed by the incident surface of the secondary electron (se) in the first detecting portion (151) and the ground is preferably larger than the incident surface and the ground of the reflected electron (be) in the second detecting portion (152). The angle formed (θ2) is large.
所述維恩過濾器部(160)配置在第一檢測部(151)和樣品支架(180)之間,即配置在第一檢測部(151)的下側,是將從樣品(S)放射出的放射電子(ee)的移動路徑向檢測部(150)側偏置的部件。與此同時,維恩過濾器部(160)起到利用包括在從樣品(S)放射出的放射電子(ee)裏的二次電子(se)和反射電子(be)的移動速度之差,用物理方式分離二次電子(se)和反射電子(be)的作用。即維恩過濾器部(160)在與從樣品(S)放射出的放射電子(ee)的移動方向垂直的面上產生相互垂直的電場和磁場,以使二次電子(se)及反射電子(be)的移動軌跡偏置。The Wien filter portion (160) is disposed between the first detecting portion (151) and the sample holder (180), that is, disposed on the lower side of the first detecting portion (151), and is emitted from the sample (S). The moving path of the emitted electrons (ee) is biased toward the detecting unit (150) side. At the same time, the Wien filter portion (160) functions to utilize the difference in the moving speeds of the secondary electrons (se) and the reflected electrons (be) included in the emitted electrons (ee) emitted from the sample (S). Physically separate the effects of secondary electrons (se) and reflected electrons (be). That is, the Wien filter unit (160) generates mutually perpendicular electric and magnetic fields on a plane perpendicular to the moving direction of the emitted electrons (ee) emitted from the sample (S) to make secondary electrons (se) and reflected electrons. (be) The movement track is offset.
所述物鏡(170)是用於將從光源(120)發生並向下方移動的原電子(pe)的焦點聚焦於樣品(S)的表面上的部件。所述樣品支架(80)配置在鏡筒的下方,是用於支撐樣品(S)的部件。另外,樣品支架(180)可沿著三軸方向移動,且可被控制為透過旋轉及傾斜等易於觀察樣品(S)。下面,詳細說明上述具備反射電子檢測功能的掃描電子顯微鏡(100)的一實施例的工作。The objective lens (170) is a member for focusing the focus of the original electron (pe) which is generated from the light source (120) and moved downward, on the surface of the sample (S). The sample holder (80) is disposed below the lens barrel and is a member for supporting the sample (S). In addition, the sample holder (180) is movable in the three-axis direction, and can be controlled to easily observe the sample (S) by rotation, tilting, or the like. Next, the operation of an embodiment of the above-described scanning electron microscope (100) having a reflected electron detecting function will be described in detail.
圖3表示在圖2所示之具備反射電子檢測功能的掃描電子顯微鏡中,通過維恩過濾器部的原電子的動作。圖4表示在圖2所示之具備反射電子檢測功能的掃描電子顯微鏡中,從樣品放射出的放射電子的移動軌跡。圖5表示在圖2所示之具備反射電子檢測功能的掃描電子顯微鏡中,通過維恩過濾器部的放射電子的動作。Fig. 3 is a view showing the operation of the primary electrons passing through the Wien filter unit in the scanning electron microscope having the reflected electron detecting function shown in Fig. 2; Fig. 4 is a view showing the movement trajectory of the emitted electrons emitted from the sample in the scanning electron microscope having the reflected electron detecting function shown in Fig. 2. Fig. 5 is a view showing an operation of emitting electrons passing through a Wien filter unit in a scanning electron microscope having a reflected electron detecting function shown in Fig. 2;
首先,如圖2所示,從鏡筒(110)內的光源(120)產生的原電子(pe)被施加高電壓而加速,從而被掃向下方的樣品(S)安裝的樣品支架(180)側。但在此時利用鏡筒(110)內的規定的反射器(reflector,未圖式)控制原電子(pe)的掃描方向。First, as shown in FIG. 2, the original electron (pe) generated from the light source (120) in the lens barrel (110) is accelerated by applying a high voltage, thereby being swept downward to the sample holder (S) mounted sample holder (180) )side. However, at this time, the scanning direction of the original electron (pe) is controlled by a predetermined reflector (not shown) in the lens barrel (110).
從光源(120)掃描的原電子(pe)通過匯聚透鏡(130)、光圈(140)之後,到達維恩過濾器部(160)。此時,在與地面平行的維恩過濾器部(160)的規定的面上,沿著相互垂直的方向產生磁場和電場。The original electron (pe) scanned from the light source (120) passes through the converging lens (130) and the aperture (140), and then reaches the Wien filter portion (160). At this time, a magnetic field and an electric field are generated in a direction perpendicular to each other on a predetermined surface of the Wien filter portion (160) parallel to the ground.
如說明透過由維恩過濾器部(160)產生的電場而施加到原電子上的力量。如圖3(a)所示,向下方移動的原電子(pe)通過維恩過濾器部(160)時,透過由維恩過濾器部(160)產生的電場(20)而受到+x軸方向的力量。The force applied to the original electrons through the electric field generated by the Wien filter portion (160) is explained. As shown in Fig. 3(a), when the original electron (pe) moving downward passes through the Wien filter unit (160), the +x axis is transmitted through the electric field (20) generated by the Wien filter unit (160). The power of direction.
與此同時,如說明透過由維恩過濾器部(160)產生的磁場(30)而施加於原電子上的力量的圖3的(b)所示,原電子(pe)和由維恩過濾器部(160)產生的磁場(30)作用,並根據弗萊明的左手定律受到-x軸方向的力量。At the same time, as shown in (b) of FIG. 3, which is applied to the original electron by the magnetic field (30) generated by the Wien filter unit (160), the original electron (pe) and the filter are filtered by Wien. The magnetic field (30) generated by the device (160) acts and receives the force in the -x-axis direction according to Fleming's left-hand law.
此時,控制維恩過濾器部(160),以使原電子(pe)由電場(20)受到的力量和由磁場(30)受到的力量的絕對值相同。因此,由維恩過濾器部(160)的磁場(30)施加到原電子(pe)的力量,被由於維恩過濾器部(160)的電場而施加到原電子(pe)的電場(20)的力量抵消,並在x-y平面上不偏向一側地向下方(-z方向)垂直移動。At this time, the Wien filter portion (160) is controlled such that the original electron (pe) receives the same force from the electric field (20) and the absolute value of the force received by the magnetic field (30). Therefore, the force applied to the original electron (pe) by the magnetic field (30) of the Wien filter portion (160) is applied to the electric field of the original electron (pe) by the electric field of the Wien filter portion (160) (20) The force cancels and moves vertically downward (-z direction) without biasing one side in the xy plane.
通過維恩過濾器部(160)的原電子(pe)透過上述過程,向垂直下方(-z軸方向)移動,最終射入樣品(S)。此時,射入樣品(S)的原電子(pe)根據樣品(S)表面上的深度分別顯示不同的機制(mechanism),並根據樣品(S)的深度放射出不同形態的電子。The original electron (pe) passing through the Wien filter unit (160) is moved vertically downward (in the -z-axis direction) through the above process, and finally the sample (S) is injected. At this time, the primary electrons (pe) injected into the sample (S) respectively exhibit different mechanisms according to the depth on the surface of the sample (S), and emit electrons of different forms according to the depth of the sample (S).
例如,原電子(pe)射入樣品(S)的表面,並與表面作用而放射出二次電子(se),而且原電子(pe)從樣品(S)的表面較深地入射時,放射出反射電子(be)。此外,原電子(pe)入射之後,從樣品(S)放射出x-ray等。For example, when the original electron (pe) is incident on the surface of the sample (S) and reacts with the surface to emit secondary electrons (se), and the original electron (pe) is incident deeper from the surface of the sample (S), the radiation is emitted. Reflective electrons (be). Further, after the original electron (pe) is incident, x-ray or the like is emitted from the sample (S).
然而,在本實施例中假設在原電子(pe)入射之後從樣品(S)放射出的放射電子(ee)僅包括與樣品(S)表面作用而放射出的二次電子(se)和從樣品(S)的表面較深地入射而放射出的反射電子(be)並進行說明。However, it is assumed in the present embodiment that the emitted electrons (ee) emitted from the sample (S) after the incident of the original electron (pe) include only the secondary electrons (se) and the sample emitted from the surface of the sample (S). The reflected electrons (be) which are incident on the surface of (S) and are emitted deeper are described.
如圖4所示,若被劃分為二次電子(se)和反射電子(be)的放射電子(ee)從樣品(S)向上側(+Z軸方向)垂直放射,則這些放射電子(ee)在通過維恩過濾器部(160)之前,沿著與原電子(pe)的掃描路徑相同的路徑移動。As shown in FIG. 4, if the emitted electrons (ee) divided into secondary electrons (se) and reflected electrons (be) are vertically emitted from the sample (S) to the upper side (+Z-axis direction), these radioactive electrons (ee) Before moving through the Wien filter portion (160), it moves along the same path as the scanning path of the original electron (pe).
若從樣品(S)放射出的放射電子(ee)到達維恩過濾器部(160),則與在原電子(pe)掃向下方時從維恩過濾器部(160)發生的相同方向的電場(20)及磁場(30)施加到放射電子(ee)上。When the emitted electrons (ee) emitted from the sample (S) reach the Wien filter portion (160), the electric field in the same direction as that generated from the Wien filter portion (160) when the original electron (pe) is swept downward (20) and the magnetic field (30) are applied to the radioactive electrons (ee).
下面,詳細說明透過由維恩過濾器部(160)產生的電場(20)及磁場(30)而施加於放射電子(ee)的力量。首先,如說明透過由維恩過濾器部(160)產生的電場而施加於放射電子(ee)的力量的圖5的(a)所示,從樣品(S)向上方(+z軸方向)垂直移動的放射電子(ee),由電場(20)受到+x軸方向的力量。Next, the force applied to the radioactive electrons (ee) by the electric field (20) and the magnetic field (30) generated by the Wien filter unit (160) will be described in detail. First, as shown in (a) of FIG. 5, the force applied to the emitted electrons (ee) by the electric field generated by the Wien filter unit (160), the sample (S) is upward (+z-axis direction). The vertically moving electrons (ee) are subjected to the +x-axis force by the electric field (20).
而且,如說明透過由維恩過濾器部(160)產生的磁場(30)而施加到放射電子(ee)的力量的圖5的(b)所示,與磁場(30)作用而產生的力量,向與上述施加到原電子(pe)的力量相反的方向,即向+x軸方向形成。即因為放射電子被施加與由電場(20)施加於放射電子(ee)的力量相同方向的力量,放射電子(ee)的移動軌跡偏向於設置有檢測部(150)的位置。也就是說,放射電子(ee)沿著與原電子(pe)相反的方向移動,故同時受到與磁場(30)作用而發生的力量及由電場(20)所施加的力量而偏向一側。Further, as shown in (b) of FIG. 5, which is applied to the force of the radioactive electrons (ee) by the magnetic field (30) generated by the Wien filter unit (160), the force generated by the action of the magnetic field (30) is shown. And formed in the opposite direction to the above-described force applied to the original electron (pe), that is, in the +x-axis direction. That is, since the emitted electrons are applied with the same force as the force applied to the emitted electrons (ee) by the electric field (20), the moving trajectory of the emitted electrons (ee) is biased toward the position where the detecting portion (150) is provided. That is to say, the emitted electrons (ee) move in the opposite direction to the original electron (pe), and are simultaneously biased to one side by the force generated by the action of the magnetic field (30) and the force applied by the electric field (20).
此時,包含在放射電子(ee)的反射電子(be)的速度大於二次電子(se)的速度,但由於受到同一力量,速度相對較慢的二次電子(se)的移動軌跡以比反射電子(be)的移動軌跡更大的角度彎曲,速度相對較快的反射電子(be)的移動軌跡以較小的角度彎曲。由於電子間的速度差,經過維恩過濾器部(160)的放射電子(ee)被分離成以比較急劇的角度偏置的二次電子(se)和以緩慢的角度偏置的反射電子(be)。At this time, the velocity of the reflected electron (be) contained in the emitted electrons (ee) is greater than the velocity of the secondary electron (se), but the moving trajectory of the secondary electron (se) which is relatively slow in speed due to the same force is compared The moving trajectory of the reflected electron (be) is bent at a larger angle, and the moving trajectory of the relatively faster reflected electron (be) is bent at a smaller angle. Due to the speed difference between the electrons, the electrons (ee) passing through the Wien filter portion (160) are separated into secondary electrons (se) biased at a relatively sharp angle and reflected electrons biased at a slow angle ( Be).
從樣品(S)放出的放射電子(ee)分離且比較急劇地偏置的二次電子(se)射入配置在維恩過濾器部(160)的正上側的第一檢測部(151),而用較快的速度移動且比較緩慢的角度偏置而被分離的反射電子(be)則射入配置在第一檢測部(151)上側的第二檢測部(152)。The secondary electrons (se) separated from the emitted electrons (ee) emitted from the sample (S) and relatively sharply biased are incident on the first detecting portion (151) disposed on the upper side of the Wien filter portion (160), On the other hand, the reflected electrons (be) which are separated by the relatively slow angular offset and are incident on the second detecting portion (152) disposed on the upper side of the first detecting portion (151).
另一方面,第一檢測部(151)及第二檢測部(152)的前端部中供電子入射的面形成斜面,從而使二次電子(se)及反射電子(be)垂直射入第一檢測部(151)及第二檢測部(152)的端面,以提高入射率。而且,第一檢測部(151)中供二次電子(se)入射的面和第二檢測部(152)中供反射電子(bse)入射的面形成各不相同的角度,從而能夠使各電子垂直入射,以提高電子入射率。下面,詳細說明本發明的第二實施例所涉及的具備檢測功能的掃描電子顯微鏡。On the other hand, in the front end portion of the first detecting portion (151) and the second detecting portion (152), a surface on which electrons are incident forms a slope, so that secondary electrons (se) and reflected electrons (be) are vertically incident first. The end faces of the detecting portion (151) and the second detecting portion (152) are used to increase the incident rate. Further, the surface of the first detecting portion (151) where the secondary electron (se) is incident and the surface of the second detecting portion (152) where the reflected electron (bse) is incident are formed at different angles, thereby enabling each electron to be made Normal incidence to increase the electron incidence. Next, a scanning electron microscope having a detection function according to a second embodiment of the present invention will be described in detail.
圖6是本發明的第二實施例所涉及具備檢測功能的掃描電子顯微鏡的剖面示意圖。如圖6所示,本發明的第二實施例所涉及的具備檢測功能的掃描電子顯微鏡(200)包括鏡筒(110)、光源(120)、匯聚透鏡(130)、光圈(140)、檢測部(250)、維恩過濾器部(160)、物鏡(170)和樣品支架(180)。本實施例的鏡筒(110)、光源(120)、匯聚透鏡(130)、光圈(140)、檢測部(250)、維恩過濾器部(160)、物鏡(170)和樣品支架(180)與上述第一實施例的結構相同,故省去重複說明。Fig. 6 is a schematic cross-sectional view showing a scanning electron microscope having a detection function according to a second embodiment of the present invention. As shown in FIG. 6, a scanning electron microscope (200) having a detection function according to a second embodiment of the present invention includes a lens barrel (110), a light source (120), a converging lens (130), an aperture (140), and detection. Part (250), Wien filter unit (160), objective lens (170) and sample holder (180). The lens barrel (110), the light source (120), the converging lens (130), the aperture (140), the detecting portion (250), the Wien filter portion (160), the objective lens (170), and the sample holder (180) of the present embodiment. The structure is the same as that of the first embodiment described above, and the repetitive description is omitted.
所述檢測部(250)包括第一檢測部(251)、第二檢測部(252)、電子導引部件(251a、252a)和導引防止部件(253)。所述第一檢測部(251)是選擇性地只檢測二次電子(se)的部件。另一方面,所述第一檢測部(251)的端部上配置有用於形成場的電子誘導部件(251a),以誘導透過維恩過濾器部(160)的二次電子向第一檢測部(251)側移動。The detecting portion (250) includes a first detecting portion (251), a second detecting portion (252), an electron guiding member (251a, 252a), and a guiding preventing member (253). The first detecting portion (251) is a member that selectively detects only secondary electrons (se). On the other hand, an electron inducing member (251a) for forming a field is disposed on an end portion of the first detecting portion (251) to induce secondary electrons passing through the Wien filter portion (160) to the first detecting portion. (251) Side movement.
所述第二檢測部(252)是選擇性地只檢測反射電子(bse)的部件。所述第二檢測部(252)的端部上配置有用於形成場的電子誘導部件(252a),以誘導通過維恩過濾器部(160)的反射電子(bse)向第二檢測部(252)側移動。The second detecting portion (252) is a member that selectively detects only reflected electrons (bse). An electron inducing member (252a) for forming a field is disposed on an end of the second detecting portion (252) to induce reflected electrons (bse) passing through the Wien filter portion (160) to the second detecting portion (252). ) Side movement.
所述導引防止部件(253)是用於防止通過維恩過濾器部(160)的反射電子(bse)被第一檢測部(251)的電子導引部件(251a)而向第一檢測部(251)側移動的部件,其在反射電子(bse)的路徑上形成有貫通部,並維持接地狀態,以防止反射電子(bse)被引向第一檢測部(251)側。The guide preventing member (253) is for preventing the reflected electrons (bse) passing through the Wien filter portion (160) from being passed to the first detecting portion by the electron guiding member (251a) of the first detecting portion (251) (251) A side moving member having a through portion formed in a path of reflected electrons (bse) and maintained in a grounded state to prevent reflected electrons (bse) from being directed to the first detecting portion (251) side.
本發明並不限於上述實施例及變形例,而在申請專利範圍所記載的範圍內,可實現為多種形態的實施例。在不脫離本發明之申請專利範圍所要求保護的本發明宗旨的範圍內,在本發明所述領域中具有通常知識者無論是誰都能變形的範圍,毋庸置疑也屬於本發明的範圍之內。The present invention is not limited to the above-described embodiments and modifications, and can be embodied in various forms within the scope of the claims. It is within the scope of the present invention to have a range in which the ordinary knowledge can be deformed in the field of the present invention without departing from the scope of the present invention as claimed in the scope of the present invention. .
100‧‧‧掃描電子顯微鏡100‧‧‧ scanning electron microscope
110‧‧‧鏡筒110‧‧‧Mirror tube
120‧‧‧光源120‧‧‧Light source
130‧‧‧匯聚透鏡130‧‧‧ Converging lens
140‧‧‧光圈140‧‧‧ aperture
150‧‧‧檢測部150‧‧‧Detection Department
151‧‧‧第一檢測部151‧‧‧First Inspection Department
152‧‧‧第二檢測部152‧‧‧Second Detection Department
160‧‧‧維恩過濾器部160‧‧‧Wien Filter Department
170‧‧‧物鏡170‧‧‧ objective lens
180‧‧‧樣品支架180‧‧‧sample holder
圖1是表示習知的一種掃描電子顯微鏡的圖。Fig. 1 is a view showing a conventional scanning electron microscope.
圖2是本發明的第一實施例所涉及具備反射電子檢測功能的掃描電子顯微鏡的剖面示意圖。Fig. 2 is a schematic cross-sectional view showing a scanning electron microscope having a reflected electron detecting function according to a first embodiment of the present invention.
圖3表示在圖2所示之具備反射電子檢測功能的掃描電子顯微鏡中通過維恩過濾器部的原電子的動作。Fig. 3 is a view showing the operation of the primary electrons passing through the Wien filter unit in the scanning electron microscope having the reflected electron detecting function shown in Fig. 2 .
圖4表示在圖2所示之具備反射電子檢測功能的掃描電子顯微鏡中從樣品放射的放射電子的移動軌跡。Fig. 4 is a view showing the movement trajectory of the emitted electrons emitted from the sample in the scanning electron microscope having the reflected electron detecting function shown in Fig. 2.
圖5表示在圖2所示之具備反射電子檢測功能的掃描電子顯微鏡中通過維恩過濾器部的放射電子的動作。Fig. 5 is a view showing an operation of emitting electrons passing through a Wien filter unit in a scanning electron microscope having a reflected electron detecting function shown in Fig. 2 .
圖6是本發明的第二實施例涉及具備反射電子檢測功能的掃描電子顯微鏡的剖面示意圖。Fig. 6 is a schematic cross-sectional view showing a scanning electron microscope having a reflected electron detecting function according to a second embodiment of the present invention.
100...掃描電子顯微鏡100. . . scanning electron microscope
110...鏡筒110. . . Lens barrel
120...光源120. . . light source
130...匯聚透鏡130. . . Converging lens
140...光圈140. . . aperture
150...檢測部150. . . Detection department
151...第一檢測部151. . . First detection unit
152...第二檢測部152. . . Second detection unit
160...維恩過濾器部160. . . Wien Filter Division
170...物鏡170. . . Objective lens
180...樣品支架180. . . Sample holder
S...樣品S. . . sample
pe...原電子Pe. . . Original electron
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WO2013047919A1 (en) | 2013-04-04 |
JP2014528153A (en) | 2014-10-23 |
JP5826941B2 (en) | 2015-12-02 |
TW201314733A (en) | 2013-04-01 |
CN103890895A (en) | 2014-06-25 |
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