TWI436465B - 銲線接合結構、銲線接合方法及半導體封裝構造的製造方法 - Google Patents

銲線接合結構、銲線接合方法及半導體封裝構造的製造方法 Download PDF

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TWI436465B
TWI436465B TW097142458A TW97142458A TWI436465B TW I436465 B TWI436465 B TW I436465B TW 097142458 A TW097142458 A TW 097142458A TW 97142458 A TW97142458 A TW 97142458A TW I436465 B TWI436465 B TW I436465B
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Taiwan
Prior art keywords
wire
bonding
pad
intermediate material
copper
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TW097142458A
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English (en)
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TW201003869A (en
Inventor
Hsiao Chuan Chang
Tsung Yueh Tsai
Yi Shao Lai
Ho Ming Tong
Jian Cheng Chen
Wei Chi Yih
Chang Ying Hung
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Advanced Semiconductor Eng
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Publication of TW201003869A publication Critical patent/TW201003869A/zh
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Description

銲線接合結構、銲線接合方法及半導體封裝構造的製造方法
本發明係有關於一種銲線接合結構及方法，更特別有關於一種銲線接合方法，藉由一加熱裝置，使銅製銲線接合於晶片接墊。
參考第1圖，在半導體封裝構造製程中，銲線接合方法的技術廣泛地將銲線14應用於晶片10之接墊11與基板12之接墊13間的電性連接。打線接合製程是以金線為主，但銅線具有低成本的優勢。相較於金，銅具有較佳的導電性及導熱性，可使銅製銲線之線徑較細及散熱效率較佳。然而，銅具有延性不足及易氧化的缺點，使銅製銲線在應用上仍有所限制。
目前，銅製銲線只能應用在大尺寸之晶片接墊或低介電值材料(low-K)晶圓之晶片接墊，其原因在於銅製銲線接合製程之成功將取決於晶片接墊之結構強度。為了避免銅製銲線接合製程之失敗，小尺寸晶片接墊將被限制。
參考第2至4圖，其顯示習知銅製銲線接合方法。參考第2圖，藉由一打線機，提供一銅製銲線20，其包含一銅線22及一銅球24。該銅球24是利用放電的方法或氫焰燒結成球而連接於該銅線22之一端。參考第3圖，將該銅球24施壓而變形。參考第4圖，藉由一振動製程，將該銅球24接合於一鋁製接墊32。然而，在施壓製程時，由於銅之硬度較大，因此施壓時銅製銲線20所造成之力將可能損壞鋁製接墊32之結構。再者，先前技術之鋁製接墊32與銅製銲線20之間的介金屬化合物(intermetallic compound；IMC)所形成之數量不足，因此先前技術之銲線接合結構具有較小的鍵結力，進而只具有較低的可靠度。
參考第5圖，美國專利第6,329,722 B1號，標題為“用於積體電路之具有銅金屬化處理的接墊(Bonding Pads for Integrated Circuits Having Copper Interconnect Metallization)”，揭示一種裝置具有薄金屬塗層70(諸如錫)，其針對用於積體電路之具有銅金屬化處理的接墊60形成強大的鍵結。該薄金屬塗層70之表面氧化可被限制，且其氧化物可容易地被移除。再者，具有該薄金屬塗層70之接墊60可在低溫時形成介金屬，致使該接墊60可銲接與相容於銲線80。
然而，該專利仍藉由習知施壓及振動製程將該銲線80之球狀部接合於具有該薄金屬塗層70之接墊60，而非藉由一簡單加熱製程。
因此，便有需要提供一種銲線接合結構及方法，能夠解決前述的問題。
本發明提供一種銲線接合方法，包含下列步驟：將一中間材料覆蓋一鋁製接墊，並固定於該鋁製接墊上；以及藉由一加熱裝置，將一銅製銲線之一端與該中間材料加熱而熔融，藉此使該銅製銲線接合於該中間材料。
根據本發明之銲線接合方法，在加熱製程時，由於該銅製銲線並無施壓於位於該鋁製接墊之中間材料，因此銅製銲線將不會損壞鋁製接墊之結構。再者，本發明之銲線接合結構的中間材料與銅製銲線之間以及中間材料與鋁製接墊之間皆具有較大的鍵結力，進而具有較高的可靠度。
為了讓本發明之上述和其他目的、特徵、和優點能更明顯，下文將配合所附圖示，作詳細說明如下。
參考第6至17圖，其顯示本發明之第一實施例之半導體封裝構造的製造方法。參考第6圖，提供一晶圓100，其定義有複數個陣列式排列之晶片110。參考第7圖，其顯示該晶片之局部放大圖。每一晶片110包含一保護層112及至少一接墊(諸如鋁製接墊132)。該保護層112覆蓋該鋁製接墊132，並裸露出一部分之該鋁製接墊132，藉此該鋁製接墊132具有一外面積A1。參考第8圖，將一中間材料140覆蓋該鋁製接墊132，並固定於該鋁製接墊132上。該中間材料140之厚度介於約0.1與約2密爾(mil)之間。
在本實施例中，可藉由一電鍍製程，將該中間材料140覆蓋該鋁製接墊132，並固定於該鋁製接墊132上。在另一實施例中，可藉由一濺鍍製程，將該中間材料140覆蓋該鋁製接墊132，並固定於該鋁製接墊132上。在又一實施例中，可藉由一印刷製程，將該中間材料140覆蓋該鋁製接墊132，並固定於該鋁製接墊132上。
由於該鋁製接墊132不須考慮氧化問題，因此該中間材料140不須覆蓋整個該鋁製接墊132所裸露之外面積A1。較佳地，該鋁製接墊132被該中間材料140所覆蓋之面積A2可小於該鋁製接墊132之99%外面積A1。同時，可節省該中間材料140之用量。再者，由於該中間材料140所覆蓋之面積A2必須有足夠大，才能用以銲接於一銲線，因此該鋁製接墊132被該中間材料140所覆蓋之面積A2可大於該鋁製接墊之30%外面積A1。
參考第9圖，將該晶圓100切割成複數個晶片110，如此以形成具有鋁製接墊132及中間材料140的晶片110。參考第10圖，藉由諸如黏膠104將該晶片110固定於一載板106上。該載板106可為基板或導線架。
參考第11圖，藉由一打線機102，提供一銲線(諸如銅製銲線120)，其中該銅製銲線120僅由單一線狀部122所組成，且該線狀部122由一端124至另一端126之剖面面積大體上相同。參考第12圖，在本實施例中，可將該銅製銲線120之一端124接觸該中間材料140。參考第13圖，在另一實施例中，可將該銅製銲線120之一端124***該中間材料140。
參考第14圖，藉由一加熱裝置108，將一銅製銲線120之一端124與該中間材料140之間的介面加熱而熔融，或者將該中間材料140加熱而熔融，藉此使一部分之線狀部122被該中間材料140所包覆，且該銅製銲線120接合於該中間材料140，如此以形成本發明之銲線接合結構，並完成本發明之銲線接合方法。舉例而言，該加熱裝置108可為雷射加熱裝置，將熱源集中於該銅製銲線120與該中間材料140之間的介面，可使該銅製銲線120之一端124與該中間材料140瞬間熔融。然後，該銅製銲線120之一端124與該中間材料140固化而結合(如第15圖所示，亦即第14圖之A部分之剖面)。或者，將熱源集中於該中間材料140，可使該中間材料140瞬間熔融。然後，該銅製銲線120之一端124與該中間材料140固化而結合(如第16圖所示，亦即第14圖之B部分之剖面)，其中該銅製銲線120之線狀部122仍可保持由一端124至另一端126之剖面面積大體上相同。
參考第17圖，該中間材料140及鋁製接墊132可視為一晶片接墊150，且該銅製銲線120之一端124電性連接於該晶片接墊150，該銅製銲線120之另一端126可電性連接於該載板106之接墊107，如此以完成本發明之半導體封裝構造的製造方法。該晶片接墊電性連接於該晶片之線路(圖未示)。
在本實施例中，該中間材料140選自錫(Sn)、金(Au)、鋅(Zn)、鉑(Pt)、鈀(Pd)、錳(Mn)、鎂(Mg)、銦(In)、鍺(Ge)及銀(Ag)所構成之群組。該中間材料140與銅製銲線120之間的介金屬化合物所形成之數量大於該鋁製接墊132與銅製銲線120之間的介金屬化合物所形成之數量，且該中間材料140與鋁製接墊132之間的介金屬化合物所形成之數量大於該鋁製接墊132與銅製銲線120之間的介金屬化合物所形成之數量。因此，該中間材料140與銅製銲線120之間的鍵結力大於該鋁製接墊132與銅製銲線120之間的鍵結力，且該中間材料140與鋁製接墊132之間的鍵結力大於該鋁製接墊132與銅製銲線120之間的鍵結力。
在一替代實施例中，該中間材料140亦可選自鎳(Ni)、釩(V)、鋁(Al)、銅(Cu)、鈦(Ti)、錫(Sn)、金(Au)、鋅(Zn)、鉑(Pt)、鈀(Pd)、錳(Mn)、鎂(Mg)、銦(In)、鍺(Ge)及銀(Ag)所構成之群組中的單一元素或一種以上的元素合金。較佳的組合可為：鎳鈀金(Ni/Pd/Au)之元素合金、鎳鈀(Ni/Pd)之元素合金、鋁鎳銅(Al/Ni/Cu)之元素合金、鈦鎳銅(Ti/Ni/Cu)之元素合金、鈦銅(Ti/Cu)之元素合金或銅錫(Cu/Sn)之元素合金。
根據本發明之銲線接合方法，在加熱製程時，由於該銅製銲線並無施壓於位於該鋁製接墊之中間材料，因此該銅製銲線將不會損壞鋁製接墊之結構。再者，本發明之銲線接合結構的中間材料與銅製銲線之間以及中間材料與鋁製接墊之間皆具有較大的鍵結力，進而具有較高的可靠度。
參考第18圖，其顯示本發明之第二實施例之半導體封裝構造製造方法之銲線接合方法。該第二實施例之半導體封裝構造製造方法大體上類似於該第一實施例之半導體封裝構造製造方法，相同元件標示相同的標號。兩者之不同處是在於第二實施例之半導體封裝構造製造方法之銲線接合方法包含下列步驟：先將該銅製銲線120之一端124接觸該中間材料140；然後藉由一加熱裝置，將該銅製銲線120之一端124加熱而熔融，藉此使該銅製銲線120接合於該中間材料140。或者，先藉由一加熱裝置，將一銅製銲線120之一端124加熱而熔融；然後將該銅製銲線120之一端124接觸該中間材料140，藉此使該銅製銲線120接合於該中間材料140。
根據本發明之銲線接合方法，在加熱製程時，由於該銅製銲線亦無施壓於位於該鋁製接墊之中間材料，因此該銅製銲線將不會損壞鋁製接墊之結構。再者，本發明之銲線接合結構的中間材料與銅製銲線之間以及中間材料與鋁製接墊之間皆具有較大的鍵結力，進而具有較高的可靠度。
參考第19圖，其顯示本發明之第三實施例之半導體封裝構造製造方法之銲線接合方法。該第三實施例之半導體封裝構造製造方法大體上類似於該第二實施例之半導體封裝構造製造方法，相同元件標示相同的標號。兩者之不同處是在於該第三實施例之半導體封裝構造製造方法並未包含將一中間材料140覆蓋該鋁製接墊132，並固定於該鋁製接墊132上之步驟。再者，該第三實施例之半導體封裝構造製造方法之銲線接合方法包含下列步驟：先將該銅製銲線之一端接觸該鋁製接墊132；然後藉由一加熱裝置，將該銲線之一端加熱而熔融，藉此使該銅製銲線接合於該鋁製接墊132。或者，先藉由一加熱裝置，將一銅製銲線之一端加熱而熔融；然後將該銅製銲線之一端接觸該鋁製接墊132，藉此使該銅製銲線接合於該鋁製接墊132。
根據本發明之銲線接合方法，在加熱製程時，由於該銅製銲線亦無施壓於位於該鋁製接墊，因此銅製銲線將不會損壞鋁製接墊之結構。
雖然本發明已以前述實施例揭示，然其並非用以限定本發明，任何本發明所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作各種之更動與修改。因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
10．．．晶片
11．．．接墊
12．．．基板
13．．．接墊
14．．．銲線
20．．．銲線
22．．．銅線
24．．．銅球
32．．．接墊
60．．．接墊
70．．．金屬塗層
80．．．銲線
100．．．晶圓
102．．．打線機
104．．．黏膠
106．．．載板
107．．．接墊
108．．．加熱裝置
110．．．晶片
112．．．保護層
120．．．銲線
122．．．線狀部
124．．．端
126．．．端
132．．．接墊
140．．．中間材料
150．．．晶片接墊
A1．．．外面積
A2．．．面積
A．．．部分
B．．．部分
C．．．部分
D．．．部分
第1圖為先前技術之銲線接合方法之剖面示意圖。
第2至4圖為先前技術之銅製銲線接合方法之剖面示意圖。
第5圖為先前技術之銲線接合結構之剖面示意圖。
第6至17圖為本發明之第一實施例之半導體封裝構造的製造方法之剖面示意圖。
第18圖為本發明之第二實施例之半導體封裝構造的製造方法中之銲線接合方法之部分放大之剖面示意圖，其顯示第14圖之C部分之剖面。
第19圖為本發明之第三實施例之半導體封裝構造的製造方法中之銲線接合方法之部分放大之剖面示意圖，其顯示第14圖之D部分之剖面。
108．．．加熱裝置
110．．．晶片
112．．．保護層
124．．．端
120．．．銲線
122．．．線狀部
132．．．接墊
140．．．中間材料

Claims (21)

  1. 一種銲線接合結構，包含：一鋁製接墊；一中間材料，覆蓋該鋁製接墊，並固定於該鋁製接墊上；以及一銅製銲線，接合於該中間材料，其中該銅製銲線僅由單一線狀部所組成，且一部分之線狀部被該中間材料所包覆；其中該中間材料與銅製銲線之間的鍵結力大於該鋁製接墊與銅製銲線之間的鍵結力，且該中間材料與鋁製接墊之間的鍵結力大於該鋁製接墊與銅製銲線之間的鍵結力。
  2. 依申請專利範圍第1項之銲線接合結構，其中該中間材料及鋁製接墊組合成一晶片接墊。
  3. 依申請專利範圍第1項之銲線接合結構，其中該中間材料選自鎳(Ni)、釩(V)、鈦(Ti)、錫(Sn)、金(Au)、鋅(Zn)、鉑(Pt)、鈀(Pd)、錳(Mn)、鎂(Mg)、銦(In)、鍺(Ge)及銀(Ag)所構成之群組。
  4. 依申請專利範圍第1項之銲線接合結構，其中該該中間材料選自鎳(Ni)、釩(V)、鋁(Al)、銅(Cu)、鈦(Ti)、錫(Sn)、金(Au)、鋅(Zn)、鉑(Pt)、鈀(Pd)、錳(Mn)、鎂(Mg)、銦(In)、鍺(Ge)及銀(Ag)所構成 之群組中一種以上的元素合金。
  5. 依申請專利範圍第1項之銲線接合結構，其中該鋁製接墊被該中間材料所覆蓋之面積介於該鋁製接墊之99%與30%之間的外面積。
  6. 依申請專利範圍第1項之銲線接合結構，其中該線狀部由一端至另一端之剖面面積相同。
  7. 一種銲線接合方法，包含下列步驟：將一中間材料覆蓋一接墊，並固定於該接墊上；以及藉由一加熱裝置，將一銲線之一端與該中間材料之介面加熱而熔融，藉此使該銲線接合於該中間材料。
  8. 依申請專利範圍第7項之銲線接合方法，另包含下列步驟：將該銲線之該端接觸該中間材料。
  9. 依申請專利範圍第7項之銲線接合方法，另包含下列步驟：將該銲線之該端***該中間材料。
  10. 依申請專利範圍第7項之銲線接合方法，其中該加熱裝置為雷射加熱裝置。
  11. 一種銲線接合方法，包含下列步驟： 將一中間材料覆蓋一接墊，並固定於該接墊上；以及藉由一加熱裝置，將一銲線之一端加熱而熔融，藉此使該銲線接合於該中間材料。
  12. 依申請專利範圍第11項之銲線接合方法，另包含下列步驟：將該銲線之該端接觸該中間材料。
  13. 依申請專利範圍第11項之銲線接合方法，其中該加熱裝置為雷射加熱裝置。
  14. 依申請專利範圍第11項之銲線接合方法，其中該銲線為一銅製銲線，且該接墊為一鋁製接墊。
  15. 一種銲線接合方法，包含下列步驟：提供一接墊；以及藉由一加熱裝置，將一銲線之一端加熱而熔融，藉此使該銲線接合於該接墊。
  16. 依申請專利範圍第15項之銲線接合方法，另包含下列步驟：將該銲線之該端接觸該接墊。
  17. 依申請專利範圍第15項之銲線接合方法，其中該加熱裝置為雷射加熱裝置。
  18. 依申請專利範圍第15項之銲線接合方法，其中 該銲線為一銅製銲線，且該接墊為一鋁製接墊。
  19. 一種半導體封裝構造的製造方法，包含下列步驟：提供一晶圓，其定義有複數個陣列式排列之晶片，每一晶片包含至少一接墊；將一中間材料覆蓋該接墊，並固定於該接墊上；將該晶圓切割成複數個晶片；將該晶片固定於一載板上；以及藉由一加熱裝置，將一銲線、該中間材料或兩者之間的介面加熱而熔融，藉此使該銲線接合於該中間材料。
  20. 依申請專利範圍第19項之半導體封裝構造的製造方法，其中該加熱裝置為雷射加熱裝置。
  21. 依申請專利範圍第19項之半導體封裝構造的製造方法，其中該銲線為一銅製銲線，且該接墊為一鋁製接墊。
TW097142458A 2008-07-11 2008-11-04 銲線接合結構、銲線接合方法及半導體封裝構造的製造方法 TWI436465B (zh)

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