JP6461822B2 - Semiconductor device mounting method and mounting apparatus - Google Patents
Semiconductor device mounting method and mounting apparatus Download PDFInfo
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- JP6461822B2 JP6461822B2 JP2015556832A JP2015556832A JP6461822B2 JP 6461822 B2 JP6461822 B2 JP 6461822B2 JP 2015556832 A JP2015556832 A JP 2015556832A JP 2015556832 A JP2015556832 A JP 2015556832A JP 6461822 B2 JP6461822 B2 JP 6461822B2
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Description
本発明は、フレキシブル基板、ガラスエポキシ基板、ガラス基板、セラミックス基板、シリコンインターポーザー、シリコン基板などの回路基板にIC、LSIなど半導体装置を接着、直接に電気的接合または積層状態のまま実装する半導体装置の実装方法および実装装置に関する。 The present invention is a semiconductor in which a semiconductor device such as an IC or LSI is bonded to a circuit board such as a flexible board, a glass epoxy board, a glass board, a ceramic board, a silicon interposer, or a silicon board and directly mounted in an electrically bonded or laminated state. The present invention relates to a device mounting method and a mounting device.
半導体装置の小型化と高密度化に伴い、半導体チップを回路基板に実装する方法としてフリップチップ実装、さらにはチップを貫通する貫通電極によって3次元的に積層する3次元積層実装が急速に広まってきている。半導体チップの接合部分の接続信頼性を確保するための方法としては、半導体チップ上に形成されたバンプと回路基板の電極パッドを接合した後に、半導体チップと回路基板との隙間に液状封止接着剤を注入し硬化させることが一般的な方法として採られている。 As semiconductor devices are miniaturized and increased in density, flip chip mounting as a method for mounting a semiconductor chip on a circuit board, and further three-dimensional stack mounting in which three-dimensional stacking is performed by through electrodes penetrating the chip are rapidly spreading. ing. As a method for ensuring the connection reliability of the joining portion of the semiconductor chip, after bonding the bump formed on the semiconductor chip and the electrode pad of the circuit board, the liquid sealing adhesion is performed in the gap between the semiconductor chip and the circuit board. It is a common method to inject and cure the agent.
また、近年、予め接着剤を形成したバンプ付き半導体チップや基板をフリップチップ接続し、電気的接合と樹脂封止を同時に行う方法が提案されている。例えば、下型から上向きにバネ付勢されて当該下型から離間された基板保持プレートに絶縁接着剤を介して半導体装置の仮実装された基板を載置し、ヒータ内蔵の上型を当該基板に近接対向させる。この状態で上型からの輻射熱によって基板を予備加熱した後に、当該上型を下降させて半導体装置を押圧および加熱しながら基板に固着させている(特許文献1を参照)。 In recent years, a method has been proposed in which a bumped semiconductor chip or substrate on which an adhesive has been formed in advance is flip-chip connected to perform electrical bonding and resin sealing simultaneously. For example, a substrate on which a semiconductor device is temporarily mounted via an insulating adhesive is placed on a substrate holding plate that is spring-biased upward from the lower die and separated from the lower die, and the upper die with a built-in heater is used as the substrate. Proximity to face. In this state, the substrate is preheated by radiant heat from the upper die, and then the upper die is lowered to fix the semiconductor device to the substrate while pressing and heating (see Patent Document 1).
しかしながら、下型から離間された状態で保持された基板上の絶縁接着剤に半導体装置を押し込む場合、上型からの熱が先に伝わるので、絶縁接着剤の種類によっては基板が下型に到達して支持された状態で加圧が開始される前に、当該絶縁接着剤が硬化する。その結果、バンプが基板の電極に達する前に絶縁接着剤が硬化し、電気的接続が確保されないといった問題が発生している。 However, when the semiconductor device is pushed into the insulating adhesive on the substrate held away from the lower mold, heat from the upper mold is transferred first, so the substrate reaches the lower mold depending on the type of insulating adhesive. Then, the insulating adhesive is cured before pressing is started in a supported state. As a result, the insulating adhesive is hardened before the bumps reach the electrodes on the substrate, causing a problem that electrical connection cannot be ensured.
また、上型を下降させる速度を速くした場合には、半導体装置が割れたり、或いは、絶縁接着剤が基板からはみ出たりするといった問題が生じている。さらに、基板の電極との接続用に半田を有する半導体装置を実装する場合、下型による加熱のタイミングが遅くなり、半田を十分に溶融させることが困難になっている。この問題を解決するために、加熱温度を上げると実装時間内のピーク温度が設置温度よりも上昇し、基板の反りや装置の使用部材の耐久性を劣化させるといった問題も生じている。 Further, when the speed of lowering the upper mold is increased, there is a problem that the semiconductor device is broken or the insulating adhesive protrudes from the substrate. Furthermore, when mounting a semiconductor device having solder for connection to the electrodes on the substrate, the timing of heating by the lower mold is delayed, making it difficult to sufficiently melt the solder. In order to solve this problem, when the heating temperature is raised, the peak temperature within the mounting time rises higher than the installation temperature, causing problems such as warpage of the substrate and deterioration of durability of the members used in the apparatus.
本発明はこのような事情に鑑みてなされたものであって、基板に半導体装置を短時間で精度よく実装可能な半導体装置の実装方法および実装装置を提供することを主たる目的としている。 The present invention has been made in view of such circumstances, and a main object of the present invention is to provide a semiconductor device mounting method and a mounting apparatus capable of mounting a semiconductor device on a substrate with high accuracy in a short time.
この発明は、このような目的を達成するために、次のような構成をとる。 In order to achieve such an object, the present invention has the following configuration.
すなわち、熱硬化性樹脂を介してバンプを有する半導体装置を基板に実装する実装方法であって、
保持ステージと前記半導体装置の間に熱伝導遅延用のプレートを介在させた状態で第1加熱器によって前記保持ステージを熱硬化性樹脂の硬化温度以上で加熱しながら押圧部材によって当該半導体装置を加圧し、バンプを基板の電極と接続するとともに熱硬化性樹脂を硬化させて基板に本圧着することを特徴とする。That is, a mounting method for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
With the heat conduction delay plate interposed between the holding stage and the semiconductor device, the semiconductor device is added by the pressing member while the holding stage is heated by the first heater above the curing temperature of the thermosetting resin. The bumps are connected to the electrodes of the substrate, the thermosetting resin is cured, and the pressure bonding is performed to the substrate.
この方法によれば、保持ステージと基板との間にプレートを介在させることにより、保持ステージから基板に伝導される熱を遅延させることがきる。したがって、保持ステージにプレートおよび基板を載置保持した後に、押圧部材によって半導体装置を加圧するまで、熱硬化性樹脂が硬化するのを抑制することができる。その結果、半導体装置のバンプと基板の電極を確実に接続した後に、熱硬化性樹脂を硬化させて基板に本圧着(固着)させることができる。 According to this method, the heat conducted from the holding stage to the substrate can be delayed by interposing the plate between the holding stage and the substrate. Therefore, after the plate and the substrate are placed and held on the holding stage, the thermosetting resin can be suppressed from being cured until the semiconductor device is pressurized by the pressing member. As a result, after securely connecting the bumps of the semiconductor device and the electrodes of the substrate, the thermosetting resin can be cured and finally bonded (fixed) to the substrate.
また、保持ステージを熱硬化性樹脂の硬化温度以上にすることにより、プレートによる熱伝導を考慮して、基板に伝達される温度を物性の硬化温度に合わせたり、遅延時間を調整したりすることができる。 In addition, by setting the holding stage to be equal to or higher than the curing temperature of the thermosetting resin, the temperature transmitted to the substrate is adjusted to the curing temperature of the physical properties and the delay time is adjusted in consideration of heat conduction by the plate. Can do.
なお、上記方法において、プレートは、次のようにして保持テーブルと基板の間に介在させてもよい。 In the above method, the plate may be interposed between the holding table and the substrate as follows.
例えば、第1加熱器によって加熱された保持ステージ上に熱伝導遅延用のプレートを搬送した後に、未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板をプレート上に搬送する。 For example, after the plate for heat conduction delay is transferred onto the holding stage heated by the first heater, the substrate on which the semiconductor device is temporarily bonded by the uncured thermosetting resin is transferred onto the plate.
他の実施形態として、未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板と熱伝導遅延用のプレートを重ね合わせて保持ステージに搬送して載置してもよい。 As another embodiment, a substrate on which a semiconductor device is temporarily press-bonded with the uncured thermosetting resin and a plate for heat conduction delay may be overlapped and conveyed to a holding stage.
なお、基板と熱伝導遅延用プレートの重ね合わせは、例えば、単に重ね合わせるだけでもよい。或いは、基板と熱伝導遅延用プレートを両面粘着テープまたは接着剤などのよって予め貼り合わせた状態であってもよい。 Note that the substrate and the heat conduction delay plate may be overlapped, for example, simply by overlapping. Alternatively, the substrate and the heat conduction delay plate may be bonded in advance with a double-sided adhesive tape or an adhesive.
この方法において、第2加熱器を備えた押圧部材によって半導体装置を加圧および加熱することが好ましい。 In this method, it is preferable to pressurize and heat the semiconductor device by a pressing member provided with a second heater.
上記方法において、バンプとして、半田が設けられている場合には、
本圧着過程は、熱硬化性樹脂が硬化するまでにバンプの半田を基板の電極に溶融接着させるよう温度設定することが好ましい。In the above method, when solder is provided as a bump,
In this press-bonding process, it is preferable to set the temperature so that the solder of the bump is melt bonded to the electrode of the substrate before the thermosetting resin is cured.
この方法によれば、基板の電極とバンプを確実に電気的に接続させることができる。 According to this method, the electrode of the substrate and the bump can be reliably electrically connected.
また、上記方法において、本圧着処理後の基板を保持ステージから搬出した後から新しい処理対象の基板をプレートに載置するまでに、プレートを冷却することが好ましい。 In the above method, it is preferable that the plate is cooled after the substrate after the main pressure bonding process is unloaded from the holding stage until the new substrate to be processed is placed on the plate.
プレートを再利用する場合、新たな処理対象の基板を当該プレートに載置したとき、前回処理時にプレートに蓄積された余熱によって熱硬化性樹脂が硬化するのを回避することができる。 When the plate is reused, when a new substrate to be processed is placed on the plate, the thermosetting resin can be prevented from being cured by the residual heat accumulated in the plate during the previous processing.
また、この発明は、このような目的を達成するために、次のような構成をとる。 The present invention has the following configuration in order to achieve such an object.
すなわち、熱硬化性樹脂を介してバンプを有する半導体装置を基板に実装する実装装置であって、
保持ステージと、
前記保持ステージを加熱する第1加熱器と、
熱伝導遅延用のプレートを前記保持ステージに搬送した後に、未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板を当該プレート上に搬送する搬送機構と、
前記保持ステージ上にプレートおよび基板の順に載置保持された当該基板上の半導体装置を押圧部材によって押圧する圧着機構と、
前記第1加熱器によって熱硬化性樹脂の硬化温度以上に保持ステージを温度制御する制御部と、
を備えたことを特徴とする。That is, a mounting device for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
Holding stage;
A first heater for heating the holding stage;
A transport mechanism for transporting a substrate on which a semiconductor device is temporarily pressure-bonded by the uncured thermosetting resin onto the plate after transporting the heat conduction delay plate to the holding stage;
A pressure-bonding mechanism that presses the semiconductor device on the substrate placed and held in the order of the plate and the substrate on the holding stage with a pressing member;
A control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater;
It is provided with.
この構成によれば、搬送機構によって加熱状態にある保持ステージ上にプレートが載置保持され、当該プレート上に基板が載置保持される。したがって、保持ステージから基板への熱の伝達は、プレートによって遅延される。すなわち、当該構成は、上記方法を好適に実施することができる。 According to this configuration, the plate is placed and held on the holding stage in a heated state by the transport mechanism, and the substrate is placed and held on the plate. Thus, heat transfer from the holding stage to the substrate is delayed by the plate. That is, the said structure can implement the said method suitably.
他の実施形態として、熱硬化性樹脂を介してバンプを有する半導体装置を基板に実装する実装装置であって、
保持ステージと、
前記保持ステージを加熱する第1加熱器と、
未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板に熱伝導遅延用のプレートを重ね合わせて搬送する搬送機構と、
前記保持ステージ上に載置保持された基板の半導体装置を押圧部材によって押圧する圧着機構と、
前記第1加熱器によって熱硬化性樹脂の硬化温度以上に保持ステージを温度制御する制御部と、
を備えたことを特徴とする。As another embodiment, a mounting device for mounting a semiconductor device having a bump on a substrate via a thermosetting resin,
Holding stage;
A first heater for heating the holding stage;
A transport mechanism for transporting a heat conduction delay plate superimposed on a substrate on which a semiconductor device is temporarily press-bonded with the uncured thermosetting resin;
A pressure-bonding mechanism that presses the semiconductor device of the substrate placed and held on the holding stage with a pressing member;
A control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater;
It is provided with.
この構成によれば、保持ステージと基板の間にプレートを介在させた状態で保持ステージに保持されるので、保持ステージから基板への熱の伝達は、プレートによって遅延される。すなわち、当該構成は、上記方法を好適に実施することができる。 According to this configuration, since the plate is held between the holding stage and the substrate, the heat transfer from the holding stage to the substrate is delayed by the plate. That is, the said structure can implement the said method suitably.
また、基板とプレートを一体にして搬送することができるので、基板が半導体ウエハの場合、薄化された当該半導体ウエハを補強することができる。したがって、搬送過程で基板が撓んで当該基板上の半導体装置が破損するのを抑制することができる。また、プレートと基板を個別に搬送するのに比べて処理時間を短縮することができる。 In addition, since the substrate and the plate can be transported integrally, when the substrate is a semiconductor wafer, the thinned semiconductor wafer can be reinforced. Therefore, it is possible to suppress the substrate from being bent during the conveyance process and the semiconductor device on the substrate from being damaged. Further, the processing time can be shortened as compared with the case where the plate and the substrate are individually conveyed.
上記各構成において、押圧部材は、第2加熱器を備え、
制御部は、第2加熱器によって熱硬化性樹脂の硬化温度以上に押圧部材を温度制御することが好ましい。In each of the above configurations, the pressing member includes a second heater,
The controller preferably controls the temperature of the pressing member to be equal to or higher than the curing temperature of the thermosetting resin by the second heater.
この構成によれば、プレートを介して保持ステージと押圧部材によって基板を挟み込んだ状態で加圧および加熱することができる。したがって、基板上の熱硬化性樹脂への熱の伝達の遅延時間を短時間に調整することができる。 According to this structure, it can pressurize and heat in the state which pinched | interposed the board | substrate with the holding stage and the press member through the plate. Therefore, the delay time of the heat transfer to the thermosetting resin on the substrate can be adjusted in a short time.
さらに、上記構成において、加熱後のプレートを冷却する冷却器を備えることが好ましい。 Furthermore, in the said structure, it is preferable to provide the cooler which cools the plate after a heating.
この構成によれば、プレートを再利用する場合、当該プレートに蓄積されている余熱を除去することができる。したがって、基板に半導体装置を加圧する前に、余熱による熱硬化性樹脂の硬化を回避することができる。 According to this configuration, when a plate is reused, residual heat accumulated in the plate can be removed. Accordingly, it is possible to avoid curing of the thermosetting resin due to residual heat before pressurizing the semiconductor device to the substrate.
本発明の半導体装置の実装方法および実装装置によれば、加熱された保持ステージ上に載置保持された基板上の半導体装置を加圧するまで、熱硬化性樹脂が硬化するのを抑制することができる。すなわち、基板とバンプとの電気的を確実に接続した状態で熱硬化性樹脂を高速に硬化させて基板に固着させることができる。 According to the mounting method and the mounting apparatus of the semiconductor device of the present invention, it is possible to suppress the thermosetting resin from being cured until the semiconductor device on the substrate placed and held on the heated holding stage is pressurized. it can. That is, the thermosetting resin can be cured at high speed and securely fixed to the substrate in a state where the electrical connection between the substrate and the bump is securely connected.
1 … 搬送機構
2 … 本圧着装置
3 … 可動台
4 … 搬送アーム
5 … ガイドレール
6 … 保持フレーム
7 … 係止爪
8 … 可動テーブル
9 … 押圧機構
10 … 保持ステージ
11 … ヒータ
13 … シリンダ
14 … 圧着ヘッド
15 … ヒータ
W … 基板
C … 半導体装置
G … 熱硬化性樹脂
P … 熱伝達遅延用のプレートDESCRIPTION OF
以下、図面を参照して本発明の一実施例を説明する。 An embodiment of the present invention will be described below with reference to the drawings.
本実施例では、熱硬化性樹脂としてNCP(Non-Conductive Paste)、NCF(Non-Conductive Film)などを使用して、半導体装置を基板に実装する場合を例に採って説明する。また、本発明の実装方法においては、熱硬化性樹脂は、NCF(非導電性接着剤フィルム)であることが好ましい。 In this embodiment, a case where a semiconductor device is mounted on a substrate using NCP (Non-Conductive Paste), NCF (Non-Conductive Film), or the like as a thermosetting resin will be described as an example. In the mounting method of the present invention, the thermosetting resin is preferably NCF (non-conductive adhesive film).
なお、本発明における「半導体装置」としては、例えば、ICチップ、半導体チップ、光素子、表面実装部品、チップ、ウエハ、TCP(Tape Carrier Package)、FPC(Flexible Printed Circuit)などバンプを有するものである。また、これら半導体装置は、種類や大きさに関係なく、基板と接合させる側の全ての形態を示す。例えばフラット表示パネルへのチップボンディングであるCOG(Chip On Glass)、TCP、およびFPCのボンディングであるOLB(Outer Lead Bonding)などが使用される。 The “semiconductor device” in the present invention is a device having bumps such as an IC chip, a semiconductor chip, an optical element, a surface mount component, a chip, a wafer, a TCP (Tape Carrier Package), and an FPC (Flexible Printed Circuit). is there. Further, these semiconductor devices show all forms on the side to be bonded to the substrate regardless of the type and size. For example, COG (Chip On Glass), which is chip bonding to a flat display panel, TCP, OLB (Outer Lead Bonding), which is FPC bonding, or the like is used.
また、本発明における「基板」とは、例えば、フレキシブル基板、ガラスエポキシ基板、ガラス基板、セラミックス基板、シリコンインターポーザー、シリコン基板などが使用される。 In addition, for example, a flexible substrate, a glass epoxy substrate, a glass substrate, a ceramic substrate, a silicon interposer, a silicon substrate, or the like is used as the “substrate” in the present invention.
先ず、本実施例に使用する装置について図面を参照して具体的に説明する。図1は本発明に係る実装装置を構成する本圧着装置の概略構成を示した斜視図、図2は実装装置の要部構成を示した平面図、図3は実装装置の要部構成を示した正面図である。 First, the apparatus used in the present embodiment will be specifically described with reference to the drawings. FIG. 1 is a perspective view showing a schematic configuration of a main crimping device constituting a mounting device according to the present invention, FIG. 2 is a plan view showing a main configuration of the mounting device, and FIG. 3 shows a main configuration of the mounting device. FIG.
図1および図2に示すように、本発明における実装装置は、搬送機構1および本圧着装置2から構成されている。以下、各構成について詳述する。
As shown in FIGS. 1 and 2, the mounting apparatus according to the present invention includes a
搬送機構1は、可動台3および搬送アーム4を備えている。可動台3は、ガイドレール5に沿って水平軸方向に移動するよう構成されている。
The
搬送アーム4は、基端側を可動台3の昇降駆動機構に連結されており、上下(Z)方向、およびZ軸周り(θ)方向に、それぞれ移動自在に構成されている。また、搬送アーム4は、先端に保持フレーム6を備えている。保持フレーム6は、図2および図3に示すように、馬蹄形をしており、熱伝導遅延用のプレートおよび基板Wを係止する複数個の係止爪7を角部に備えている。
The transfer arm 4 is connected at its base end side to the lifting / lowering drive mechanism of the movable table 3 and is configured to be movable in the vertical (Z) direction and the Z axis (θ) direction. The transfer arm 4 includes a holding
本圧着装置2は、可動テーブル8および押圧機構9などから構成されている。
The main crimping
可動テーブル8は、基板Wを吸着保持する保持ステージ10を備えている。保持ステージ10は、水平2軸(X,Y)方向、上下(Z)方向、およびZ軸周り(θ)方向に、それぞれ移動自在に構成されている。なお、保持ステージ10の外形は、保持フレーム6の内側に収まるサイズに設定されている。また、保持ステージ10は、内部にヒータ11が埋設されている。なお、ヒータ11は、本発明の第1加熱器に相当する。
The movable table 8 includes a holding
押圧機構9は、シリンダ13および圧着ヘッド14などから構成されている。すなわち、圧着ヘッド14の上方にシリンダ13が連結されており、圧着ヘッド1314が上下に移動するよう構成されている。圧着ヘッド14は、下向き凸形状であって基板Wの端縁側に整列配置された複数個の半導体装置Cの整列方向に伸びている。つまり凸部先端によって複数個の半導体装置Cを同時に加圧するよう構成されている。また、圧着ヘッド14にはヒータ15が埋設されている。なお、圧着ヘッド14は本発明の押圧部材に相当し、ヒータ15は第2加熱器に相当する。
The
制御部20は、圧着ヘット14のヒータ15および保持ステージ10のヒータ11の温度が、熱硬化性樹脂Gを硬化させる温度と同等またはそれ以上の温度を維持するよう各ヒータ11、15の温度を制御している。
The
次に上述の実施例装置を用いて半導体装置Cを当該基板Wに本圧着する一巡の動作について、図4に示すフローチャートおよび図5から図8を参照しながら説明する。なお、本実施例では、前工程の仮圧着工程でNCFによって複数個の半導体装置Cが基板Wに予め仮圧着された状態で搬送されたものに対し、熱硬化性樹脂を完全に硬化させ本圧着する場合を例に採って説明する。 Next, a round operation of finally bonding the semiconductor device C to the substrate W using the above-described embodiment apparatus will be described with reference to the flowchart shown in FIG. 4 and FIGS. In the present embodiment, the thermosetting resin is completely cured with respect to the one in which a plurality of semiconductor devices C are transported in a pre-press-bonded state to the substrate W by NCF in the temporary press-bonding step of the previous step. The case of crimping will be described as an example.
先ず、保持ステージ10および圧着ヘッド14に備わった両ヒータ11、15の温度を、操作部21を操作して設定する。ここで、両ヒータ11、15の温度は、熱伝導遅延用のプレートPと基板Wの界面および圧着ヘッド14と半導体装置Cの界面の温度が熱硬化性樹脂Gの硬化温度よりも高く設定される。すなわち、保持ステージ10に吸着保持された基板Wが、圧着ヘッド14の下側の実装位置に達した時点で、半導体装置CおよびプレートPを介して熱硬化性樹脂Gに伝達される熱が、硬化温度になるように設定される(ステップS1)。
First, the temperatures of the
また、本実施例では、プレートPにステンレス鋼が使用される。ここで、プレートPは、例えば、熱伝達率(W/m・K)Lとプレートの厚み(mm)Tと関係、すなわち、L/Tが、1以上かつ20以下となるように設定される。なお、プレートPは、ステンレス鋼に限定されず、圧着ヘッド14の押圧によって変形しない材質であればよく、金属、セラミック、カーボンおよび多孔質材などであってもよい。
In this embodiment, stainless steel is used for the plate P. Here, the plate P is set so that, for example, the relationship between the heat transfer coefficient (W / m · K) L and the plate thickness (mm) T, that is, L / T is 1 or more and 20 or less. . The plate P is not limited to stainless steel, and may be any material that is not deformed by the pressing of the pressure-
初期設定が完了すると装置を作動させる(ステップS2)。本圧着装置側では、制御部20がヒータ11、15をオンにして初期設定の温度を一定に保つように温度制御を開始する。
When the initial setting is completed, the apparatus is operated (step S2). On the main crimping apparatus side, the
仮圧着工程側に配備された図示しない搬送ロボットによって、図5に示すように、搬送機構1の保持フレーム6にプレートPが載置され、その後に当該プレートP上に基板Wが載置される(ステップS3)。
As shown in FIG. 5, the plate P is placed on the holding
プレートPと基板Wが重ね合わされた状態で、本圧着装置2へと搬送される。このプレートPを下にして基板Wは、図5の二点鎖線で示すように、保持ステージ10に移載される。プレートPには、複数個の貫通孔が形成されおり、貫通孔を介して保持ステージ10に吸着保持される(ステップS4)。また、保持ステージ10は図示しない駆動機構によって、前方(図1のY方向)である、圧着ヘッド14の下方の予め決められた実装位置に移動する。
In a state where the plate P and the substrate W are overlaid, the plate P and the substrate W are conveyed to the main
保持ステージ10にプレートPおよび基板Wが吸着保持された時点からヒータ11によって加熱が開始される(ステップS5)。
Heating is started by the
保持ステージ10が実装位置に達すると、図6に示すように、シリンダ13の作動により圧着ヘッド14が下降し、複数個の半導体装置Cが同時に挟み込まれる。このとき、加熱されている圧着ヘッド14によって、半導体装置Cは、加熱されながら押圧される(ステップS6)。
When the holding
すなわち、圧着ヘッド14が所定の高さまで下降したとき、熱硬化性樹脂Gは、未硬化状態にあるので、図7に示すように、圧着ヘッド14の加圧によって半導体装置CのバンプBが熱硬化性樹脂Gに押し込まれる。すなわち、半導体装置CのバンプBが基板Wの電極に達した後に、熱硬化性樹脂が硬化する。
That is, when the
熱硬化性樹脂Gが完全に硬化する所定時間まで半導体装置Cを加圧および加熱すると(ステップS7)、圧着ヘッド14を上方の待機位置に復帰させて加圧を解除するとともに、搬送機構1によりプレートPと基板Wを搬出する(ステップS8)。
When the semiconductor device C is pressurized and heated until a predetermined time until the thermosetting resin G is completely cured (step S7), the
プレートPと基板Wを所定の位置まで搬送した後は、他の搬送ロボットに受け渡すか、或いはストッカに収納する。 After the plate P and the substrate W are transferred to a predetermined position, they are transferred to another transfer robot or stored in a stocker.
以上で1枚の基板2上の半導体装置の実装が終了する。以後、所定枚数の基板について同じ動作が繰り返される。
This completes the mounting of the semiconductor device on one
この構成によれば、熱硬化性樹脂Gの硬化温度以上に維持された保持ステージ上に熱伝導遅延用のプレートPを載置した上に半導体装置Cの仮圧着された基板Wを吸着保持するので、圧着ヘッド14が下降して加圧しきるまで、熱硬化性樹脂Gが硬化されることがない。すなわち、本実施例では、図8の実線で示すように、保持ステージ10上にプレートPと基板Wを載置保持した時点T1から圧着ヘッド14を半導体装置Cに当接させて加圧を開始する時点T2(例えば、本実施例では半田溶融温度の時点に設定)までの温度勾配が、プレートPを介在させていない一点鎖線で示した従来方法の温度勾配よりも小さく、熱硬化性樹脂Gの硬化温度よりも低い温度に保つことが可能である。換言すれば、圧着ヘッド14による半導体装置Cの加圧開始までの温度ギャップが、従来方法よりも大きいので、圧着ヘッド14が所定高さまで下降して半導体装置CのバンプBを基板Wの電極に到達させるまで、熱硬化性樹脂Gを未硬化状態に保つことができる。その結果、基板Wの電極とバンプBの電気的接続を確実にすることができる。
According to this configuration, the heat conduction delay plate P is placed on the holding stage maintained at a temperature equal to or higher than the curing temperature of the thermosetting resin G, and the temporarily bonded substrate W of the semiconductor device C is sucked and held. Therefore, the thermosetting resin G is not cured until the pressure-
なお、熱硬化性樹脂Gの硬化温度はDSC(示差走査熱量測定)によって測定することができる。 The curing temperature of the thermosetting resin G can be measured by DSC (differential scanning calorimetry).
本発明は上述した実施例のものに限らず、次のように変形実施することもできる。 The present invention is not limited to the embodiment described above, and can be modified as follows.
(1)上記実施例装置の圧着ヘッド14は、1個の半導体装置Cを本圧着するシングルタイプまたは、図9に示すように、当該シングルタイプを複数個備えたマルチタイプにも利用することができる。
(1) The pressure-
(2)上記実施例装置では、保持ステージ10と圧着ヘッド14に備わった各ヒータ11、15の温度を同じに設定していが、例えば、次のように温度設定してもよい。例えば、圧着ヘッド14による半導体装置Cの加圧開始時点から当該半導体装置Cを介して熱硬化性樹脂Gに熱が伝わる時間と、基板WおよびプレートPを介して熱硬化性樹脂Gに熱が伝わる時間とが同じタイミングとなるように、各ヒータ11、15の温度を適宜に設定変更してもよい。
(2) In the above-described embodiment apparatus, the temperatures of the
また、温度伝達時間は、ヒータ11、15の上記の温度設定のみならず、プレートPの厚みで調整してもよい。この方法によれば、基板Wと半導体装置Cの熱伝達の差によって生じる恐れのある基板Wの反りを抑制することができる。
Further, the temperature transmission time may be adjusted not only by the temperature setting of the
(3)半導体装置のバンプBが、半田ボールまたは銅電極ピラーに半田形成された構成である場合、加圧によって熱硬化性樹脂Gに押し込まれたバンプが、基板Wの電極に接触するとともに、接触状態から半田が溶融接着するまでの時間、熱硬化性樹脂Gが未硬化状態となるよう温度制御すればよい。 (3) When the bump B of the semiconductor device has a configuration in which the solder ball or the copper electrode pillar is soldered, the bump pressed into the thermosetting resin G by the press contacts the electrode of the substrate W, What is necessary is just to control temperature so that the thermosetting resin G will be in an unhardened state for the time from a contact state to a solder melt-bonding.
(4)上記実施例装置では、保持ステージ10が、可動テーブル8によって移動可能に構成されていたが、固定された構成であってもよい。この場合、保持フレーム6によってプレートPと基板Wを搬送する時点でアライメントが保たれていればよい。また、プレートPは、保持フレーム6に固定または一体構成されていてもよい。したがって、本発明において、保持ステージ6上にプレートP、基板Wの順に重ね合って保持されていればよいので、それぞれの搬送のタイミングは、同時であってもよいし、プレートPを基板Wより先に保持ステージ10に載置してもよい。
(4) In the above-described embodiment apparatus, the holding
(5)上記実施例装置では、1枚の基板Wを用いていたが、複数枚の基板Wが連なったブレイク前の基板Wを用いてもよい。この場合、ブレイク前の基板Wに対応したサイズのプレート上に当該複数枚分の基板W載置し、基板単位で圧着ヘッドの下方でシフトさせながら本圧着すればよい。 (5) In the above-described embodiment apparatus, one substrate W is used. However, a substrate W before breaking in which a plurality of substrates W are connected may be used. In this case, the plurality of substrates W may be placed on a plate having a size corresponding to the substrate W before the break, and the main bonding may be performed while shifting the substrate below the pressure bonding head.
(6)上記実施例では、プレートPと基板Wを保持ステージ10に同時に載置しているが、個別に搬送および載置してもよい。この場合、保持ステージ10にプレートPを載置した後に基板Wを載置することになる。
(6) In the above embodiment, the plate P and the substrate W are placed on the holding
(7)上記実施例において、プレートPを再利用する場合、本圧着処理後から新しい基板WをプレートP上に載置するまでにプレートPを冷却器によって冷却してもよい。冷却器としては、例えばノズルによってエアーを吹き付けるように構成すればよい。 (7) In the above embodiment, when the plate P is reused, the plate P may be cooled by a cooler after the main pressure bonding process and before the new substrate W is placed on the plate P. What is necessary is just to comprise a cooler, for example so that air may be sprayed with a nozzle.
(8)上記実施例において、プレートPは、図10および図11に示すように、粘着剤によって基板Wに予め貼り付けられていてもよい。プレートPのサイズは、基板Wと同形状で同じ大きさまたは基板以上の大きさであってもよい。この場合、プレートとしては、例えば、ガラス、ステンレス鋼またはポリミドなどから成形したものが適宜に選択される。 (8) In the said Example, the plate P may be affixed previously to the board | substrate W with the adhesive, as shown in FIG.10 and FIG.11. The size of the plate P may be the same shape as the substrate W and the same size or larger than the substrate. In this case, as a plate, what was shape | molded, for example from glass, stainless steel, or a polyimide is selected suitably.
この構成によれば、基板Wがバックグラインドにより薄化された半導体ウエハである場合、剛性の低下した基板Wを補強することができる。すなわち、基板Wの搬送時に、当該基板Wが撓んで半導体装置Cが破損するのを抑制することができる。また、上記実施例の処理に比べて保持ステージ10への搬送回数を低減することができる。すなわち、図4に示すステップS3において、プレート付きの基板Wを保持ステージ10に1回だけ搬送して載置するだけでよい。また、ステップS8において、本圧着後にプレート付きの基板Wを保持ステージ10から1回だけ搬出するだけでよい。したがって、当該実施形態は、処理速度を向上させることができる。なお、当該プレート付き基板Wの搬送は、上記搬送機構1を利用してもよいし、或いは、馬蹄形をしたエンドエフェクタを有する搬送ロボットによってプレートPを吸着しながら搬送してもよい。
According to this configuration, when the substrate W is a semiconductor wafer thinned by back grinding, the substrate W with reduced rigidity can be reinforced. That is, when the substrate W is transported, the semiconductor device C can be prevented from being bent due to the substrate W being bent. In addition, the number of conveyances to the holding
また、この実施形態において、基板WとプレートPを単に重ね合わせた状態で搬送するようにしてもよい。 In this embodiment, the substrate W and the plate P may be transported in a state where they are simply overlapped.
なお、この実施形態において、保持ステージ10から搬出された基板WおよびプレートPを冷却してもよい。例えば、搬送過程または所定位置で保持プレートPにエアーを吹き付けてもよい。
In this embodiment, the substrate W and the plate P carried out from the holding
以上のように、本発明は、半導体装置と基板の電極を電気的に精度よく接続させながら熱硬化性樹脂を硬化させるのに適している。 As described above, the present invention is suitable for curing a thermosetting resin while electrically connecting a semiconductor device and an electrode of a substrate with high accuracy.
Claims (13)
未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板と熱伝導遅延用のプレートを重ね合わせて搬送する搬送過程を備え、
保持ステージと前記半導体装置の間に熱伝導遅延用のプレートを介在させた状態で第1加熱器によって前記保持ステージを熱硬化性樹脂の硬化温度以上で加熱しながら押圧部材によって当該半導体装置を加圧し、バンプを基板の電極と接続するとともに熱硬化性樹脂を硬化させて基板に本圧着する
ことを特徴とする実装方法。 A mounting method for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
Comprising a transporting process in which a substrate on which a semiconductor device is temporarily press-bonded with the uncured thermosetting resin and a plate for heat conduction delay are stacked and transported;
With the heat conduction delay plate interposed between the holding stage and the semiconductor device, the semiconductor device is added by the pressing member while the holding stage is heated by the first heater above the curing temperature of the thermosetting resin. And mounting the bumps to the electrodes of the substrate, curing the thermosetting resin, and finally pressing the substrate to the substrate.
前記第1加熱器によって加熱された保持ステージ上に熱伝導遅延用のプレートを搬送する第1搬送過程と、
未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板をプレート上に搬送する第2搬送過程と、
を備え、
保持ステージと前記半導体装置の間に熱伝導遅延用のプレートを介在させた状態で第1加熱器によって前記保持ステージを熱硬化性樹脂の硬化温度以上で加熱しながら押圧部材によって当該半導体装置を加圧し、バンプを基板の電極と接続するとともに熱硬化性樹脂を硬化させて基板に本圧着する
ことを特徴とする実装方法。 A mounting method for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
A first transporting process for transporting a plate for delaying heat conduction onto a holding stage heated by the first heater;
A second transporting process for transporting a substrate on which a semiconductor device has been temporarily pressure-bonded by the uncured thermosetting resin onto a plate;
With
With the heat conduction delay plate interposed between the holding stage and the semiconductor device, the semiconductor device is added by the pressing member while the holding stage is heated by the first heater above the curing temperature of the thermosetting resin. A mounting method comprising: pressing and connecting the bumps to the electrodes of the substrate, and curing the thermosetting resin and finally pressing the substrate to the substrate .
第2加熱器を備えた前記押圧部材によって半導体装置を加圧および加熱する
ことを特徴とする実装方法。 In the mounting method according to claim 1 or 2,
The mounting method, wherein the semiconductor device is pressurized and heated by the pressing member including the second heater.
前記押圧部材の設定温度を熱硬化性樹脂の硬化温度以上にして当該熱硬化性樹脂を加熱する
ことを特徴とする実装方法。 The mounting method according to claim 3,
A mounting method, wherein the thermosetting resin is heated by setting a temperature of the pressing member to be equal to or higher than a curing temperature of the thermosetting resin.
前記バンプは、半田が設けられており、
前記本圧着過程は、熱硬化性樹脂が硬化するまでにバンプの半田を基板の電極に溶融接着させる
ことを特徴とする実装方法。 In the mounting method according to claim 1 or 2 ,
The bump is provided with solder,
The mounting method characterized in that the main press-bonding process includes melt bonding the bump solder to the electrode of the substrate before the thermosetting resin is cured.
前記本圧着処理後の基板を保持ステージから搬出した後から新しい処理対象の基板をプレートに載置するまでに、当該プレートを冷却する
ことを特徴とする実装方法。 In the mounting method according to claim 1 or 2 ,
A mounting method, wherein the plate is cooled after the substrate after the main press-bonding process is carried out from the holding stage until the substrate to be newly processed is placed on the plate.
前記熱硬化性樹脂は、非導電性接着剤フィルムである
ことを特徴とする実装方法。 In the mounting method according to claim 1 or 2 ,
The mounting method, wherein the thermosetting resin is a non-conductive adhesive film.
保持ステージと、
前記保持ステージを加熱する第1加熱器と、
熱伝導遅延用のプレートを前記保持ステージに搬送した後に、未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板を当該プレート上に搬送する搬送機構と、
前記保持ステージ上にプレートおよび基板の順に載置保持された当該基板上の半導体装置を押圧部材によって押圧する圧着機構と、
前記第1加熱器によって熱硬化性樹脂の硬化温度以上に保持ステージを温度制御する制御部と、
と備えたことを特徴とする実装装置。 A mounting device for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
Holding stage;
A first heater for heating the holding stage;
A transport mechanism for transporting a substrate on which a semiconductor device is temporarily pressure-bonded by the uncured thermosetting resin onto the plate after transporting the heat conduction delay plate to the holding stage;
A pressure-bonding mechanism that presses the semiconductor device on the substrate placed and held in the order of the plate and the substrate on the holding stage with a pressing member;
A control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater;
A mounting apparatus characterized by comprising:
前記押圧部材は、第2加熱器を備え、
前記制御部は、第2加熱器によって熱硬化性樹脂の硬化温度以上に押圧部材を温度制御する
ことを特徴とする実装装置。 The mounting apparatus according to claim 8 ,
The pressing member includes a second heater,
The said control part controls the temperature of a press member more than the curing temperature of a thermosetting resin with a 2nd heater. The mounting apparatus characterized by the above-mentioned.
加熱後のプレートを冷却する冷却器を備えた
ことを特徴とする実装装置。 In the mounting device according to claim 8 or 9 ,
A mounting apparatus comprising a cooler for cooling the heated plate.
保持ステージと、
前記保持ステージを加熱する第1加熱器と、
未硬化状態の前記熱硬化性樹脂によって半導体装置を仮圧着した基板と熱伝導遅延用のプレートを重ね合わせて搬送する搬送機構と、
前記保持ステージ上に載置保持された基板の半導体装置を押圧部材によって押圧する圧着機構と、
前記第1加熱器によって熱硬化性樹脂の硬化温度以上に保持ステージを温度制御する制御部と、
と備えたことを特徴とする実装装置。 A mounting device for mounting a semiconductor device having bumps on a substrate via a thermosetting resin,
Holding stage;
A first heater for heating the holding stage;
A transport mechanism that stacks and transports a substrate on which a semiconductor device is temporarily bonded by the uncured thermosetting resin and a plate for heat conduction delay;
A pressure-bonding mechanism that presses the semiconductor device of the substrate placed and held on the holding stage with a pressing member;
A control unit for controlling the temperature of the holding stage to be equal to or higher than the curing temperature of the thermosetting resin by the first heater;
A mounting apparatus characterized by comprising:
前記押圧部材は、第2加熱器を備え、
前記制御部は、第2加熱器によって熱硬化性樹脂の硬化温度以上に押圧部材を温度制御する
ことを特徴とする実装装置。 The mounting apparatus according to claim 11 ,
The pressing member includes a second heater,
The said control part controls the temperature of a press member more than the curing temperature of a thermosetting resin with a 2nd heater. The mounting apparatus characterized by the above-mentioned.
加熱後のプレートを冷却する冷却器を備えた
ことを特徴とする実装装置。 The mounting apparatus according to claim 11 or 12 ,
A mounting apparatus comprising a cooler for cooling the heated plate.
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JP2010114208A (en) * | 2008-11-05 | 2010-05-20 | Nikon Corp | Cooling apparatus and joining system |
JP2010245195A (en) * | 2009-04-02 | 2010-10-28 | Nec Corp | Apparatus for manufacturing semiconductor device, and method for manufacturing semiconductor device |
JP5602439B2 (en) * | 2010-01-22 | 2014-10-08 | デクセリアルズ株式会社 | Heating device and manufacturing method of mounting body |
JP5401709B2 (en) | 2010-02-02 | 2014-01-29 | アピックヤマダ株式会社 | Bonding apparatus and bonding method for semiconductor device |
JP5892682B2 (en) * | 2011-04-27 | 2016-03-23 | アピックヤマダ株式会社 | Joining method |
-
2015
- 2015-01-08 KR KR1020167018167A patent/KR20160105415A/en not_active Application Discontinuation
- 2015-01-08 TW TW104100526A patent/TWI656582B/en active
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TWI656582B (en) | 2019-04-11 |
WO2015105149A1 (en) | 2015-07-16 |
TW201532161A (en) | 2015-08-16 |
JPWO2015105149A1 (en) | 2017-03-23 |
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