TWI423268B - 含奈米銀線之軟性透明導電膜及其製造方法 - Google Patents
含奈米銀線之軟性透明導電膜及其製造方法 Download PDFInfo
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Description
本發明是有關於一種導電膜及其製造方法,且特別是有關於一種軟性且透明之導電膜及其製造方法。
顯示面板及太陽能板都需要透明導電的薄膜材料,常見者為一些金屬氧化物材料,例如氧化銦錫(Indium Tin Oxide;ITO)。這些金屬氧化物材料不僅成本高,而且多為不可撓材料。因此,無法滿足一些需要可撓性應用(如電子紙)之需求。
因此,本發明之一態樣是在提供一種含奈米銀線之軟性透明導電膜及其製造方法。
依據一實施方式,上述之軟性透明導電膜的組成包含親水性透明樹脂以及分佈於親水性透明樹脂中的奈米銀線。
依據另一實施方式,上述之軟性透明導電膜的製造方法包含下列步驟。首先,在軟性透明基材上塗佈親水性透明樹脂,乾燥該親水性透明樹脂,接著將該親水性透明樹脂浸泡於奈米銀線的分散液中,最後熱壓具有奈米銀線分佈的親水性透明樹脂,讓奈米銀線進入該親水性透明樹脂中。重複浸泡與熱壓的步驟數次,直至軟性透明導電膜的面電阻值符合需求為止。
前述發明內容旨在提供本揭示內容的簡化摘要,以使閱讀者對本揭示內容具備基本的理解。此發明內容並非本揭示內容的完整概述,且其用意並非在指出本發明實施例的重要/關鍵元件或界定本發明的範圍。在參閱下文實施方式後,本發明所屬技術領域中具有通常知識者當可輕易瞭解本發明之基本精神及其他發明目的,以及本發明所採用之技術手段與實施態樣。
依據上述,提供一種含奈米銀線之軟性透明導電膜及其製造方法。在下面的敘述中,將會介紹上述之含奈米銀線之軟性透明導電膜的例示結構與其例示之製造方法。為了容易瞭解所述實施例之故,下面將會提供不少技術細節。當然,並不是所有的實施例皆需要這些技術細節。同時,一些廣為人知之結構或元件,僅會以示意的方式在圖式中繪出,以適當地簡化圖式內容。
第1A圖係繪示依照本發明一實施方式之一種含奈米銀線之軟性透明導電膜的剖面結構示意圖,第1B圖為第1A圖之俯視示意圖。在第1A圖中,含奈米銀線之軟性透明導電膜140位於軟性透明基材110上。軟性透明導電膜140係由親水性透明樹脂120以及層層分佈於其中之奈米銀線130所組成。由第1B圖之俯視圖可知,奈米銀線130在親水性透明樹脂120中是一層又一層地交錯疊加上去的,因此可形成奈米銀線間的許多接點,增加軟性透明導電膜140的導電度而滿足二維平面的導電需求。
上述之軟性透明基材110的材料例如可為聚乙烯對苯二甲酸酯(poly(ethylene terephthalate);PET)、聚甲基丙烯酸甲酯(Polymethylmethacrylate;PMMA)或聚碳酸酯(polycarbonate;PC)。
上述之親水性透明樹脂120例如可為感壓膠(pressure sensitive adhesive)或熱融膠(hot melt adhesive)。上述感壓膠之玻璃轉移溫度需小於室溫(約25℃),例如可為丙烯酸樹脂(acrylic resin)或聚矽脂(Polysilicon)。上述熱融膠之玻璃轉移溫度需大於室溫(約25℃),例如可為丙烯酸樹脂或聚氨脂(Polyurethane)。
上述奈米銀線130的尺寸較佳為直徑70 nm-120 nm,長度14 μm-25 μm以及長徑比約為180-220。
由上述親水性透明樹脂120及奈米銀線130所組成之軟性透明導電膜140的厚度約為20 μm-70 μm,較佳為30 μm-50 μm。為了使軟性透明導電膜140的面電阻值小於或等於氧化銦錫(Indium Tin Oxide;ITO)的面電阻值(亦即400 ohm/cm2
),同時又可維持軟性透明基材110與軟性透明導電膜140的總透光度為60%-80%(測量儀器為日本電色NDH 2000霧度計),可調控上述軟性透明導電膜140中奈米銀線130的含量為0.5 wt%-4 wt%,較佳為2 wt%-3 wt%。
第2圖係繪示第1圖之含奈米銀線之軟性透明導電膜的製造流程圖。在第2圖中,含奈米銀線之軟性透明導電膜的製造流程包含於軟性透明基材上塗佈親水性透明樹脂(步驟210)、乾燥軟性透明基材與親水性透明樹脂之複合結構(步驟220)、將上述複合結構浸於奈米銀線的分散溶液中(步驟230)及熱壓親水性透明樹脂(步驟240)等步驟。
在步驟210中,先在軟性透明基材上均勻地塗佈一層親水性透明樹脂。然後在步驟220中,乾燥軟性透明基材與親水性透明樹脂之複合結構,乾燥的方法例如可為烘乾,而上述複合結構的置放方式可為平放或垂吊。
接下來,在步驟230中,浸泡上述之複合結構於奈米銀線的分散液中,讓奈米銀線藉由極性作用力(亦即親水性作用力)附著在親水性透明樹脂的表面上。前述奈米銀線的分散液之溶劑例如可為水、乙醇、丙醇或前述溶劑之任意組合,而奈米銀線分散液之濃度為0.05 wt%-10 wt%,例如可為0.1 wt%-5 wt%或0.1 wt%-1 wt%。
再來,在步驟240中,藉由熱壓方式軟化親水性透明樹脂,讓奈米銀線陷入親水性透明樹脂之中,形成軟性透明導電膜。其中,上述奈米銀線於親水性透明樹脂中的含量為0.5 wt%-4 wt%,較佳為2 wt%-3 wt%。在此熱壓步驟中,適用之溫度、壓力與時間係依所用透明樹脂的材料而定。例如以位於輸送帶上之軟性透明基材與親水性透明樹脂之複合結構而言,當輸送帶的速率為0.45 m/min且親水性透明樹脂的材料為丙烯酸樹脂時,熱壓的溫度為80℃-120℃,壓力為1 atm-5 atm,需重複熱壓兩次。
然後,重複步驟230與240數次,得到軟性透明導電膜。待軟性透明導電膜的面導電度及透明度符合產品的需求。
在此實驗中,軟性透明基板的材料為聚乙烯對苯二甲酸酯(商品名O300E,購自日本三菱公司),親水性透明樹脂的材料為丙烯酸樹脂(重量平均分子量為40萬-60萬,玻璃轉換溫度為40℃-70℃),乾燥的條件為85℃下垂直烘乾10分鐘,且奈米銀線分散液的濃度為0.46 wt%,熱壓步驟的溫度為110℃,壓力為2 atm。所得結果列於表一。
從表一的結果可知,在奈米銀線的分散液中浸泡次數越多,軟性透明導電膜的面電阻值越低。而且在乾燥後,再靜置數天,可以進一步地大幅降低軟性透明導電膜的面電阻值。推測其因為在靜置過程中,奈米銀線的密度可以隨著膜厚的減少而增加,因此減少了軟性透明導電膜的面電阻值。而且,經由此法所製得之軟性透明導電膜,其奈米銀線於親水性透明樹脂的含量為2%,且該導電膜的面電阻值(32 ohm/cm2
),比常見之透明導電材料氧化銦錫的面電阻值(400 ohm/cm2
)還要低許多。
在此實驗中,軟性透明基板的材料為聚乙烯對苯二甲酸酯(商品名O300E,購自日本三菱公司),親水性透明樹脂的材料為丙烯酸樹脂(重量平均分子量為40萬-60萬,玻璃轉換溫度為40℃-70℃),乾燥的條件為85℃下垂直烘乾10分鐘,且奈米銀線分散液的濃度為0.46 wt%,熱壓步驟的溫度為110℃,壓力為2 atm。所得結果列於表二中。
由表二的結果可知,若想讓軟性透明導電膜具有相近的面電阻值,當奈米銀線分散液濃度越低時,需要浸泡在奈米銀線分散液的次數就要越多。
由上述本發明實施方式可知,可利用含有奈米銀線的親水性透明樹脂來形成軟性透明導電膜,且其面電阻值可以比常見之透明導電材料氧化銦錫的面電阻值還要低。因此,依據本發明實施方式所製得之軟性透明導電膜在需要可撓性的電子裝置上,具有十分龐大的應用潛力。
雖然本發明已以實施方式揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。
110...軟性透明基材
120...親水性透明樹脂
130...奈米銀線
140...軟性透明導電膜
210、220、230、240...步驟
第1A圖係繪示依照本發明一實施方式之一種含奈米銀線之軟性透明導電膜的剖面結構示意圖。
第1B圖為第1A圖之俯視示意圖。
第2圖係繪示依照本發明一實施方式的一種含奈米銀線之軟性透明導電膜的製造流程圖。
110...軟性透明基材
120...親水性透明樹脂
130...奈米銀線
140...軟性透明導電膜
Claims (7)
- 一種軟性透明導電膜之製造方法,該製造方法包含:塗佈一親水性透明樹脂於一軟性透明基材上;乾燥該親水性透明樹脂;浸泡乾燥後之該親水性透明樹脂於一奈米銀線的分散液中,其中該奈米銀線分散液之濃度為0.05wt%-10wt%;熱壓該親水性透明樹脂,讓該些奈米銀線進入該親水性透明樹脂中,其中該熱壓的溫度為80℃-120℃,該熱壓的壓力為1atm-5atm;以及重複該浸泡與該熱壓步驟數次,直至該些奈米銀線於該親水性透明樹脂中的含量約為0.5wt%-4wt%為止。
- 如請求項1所述之軟性透明導電膜之製造方法,其中形成該軟性透明基材的材料為聚乙烯對苯二甲酸酯、聚甲基丙烯酸甲酯或聚碳酸酯。
- 如請求項1所述之軟性透明導電膜之製造方法,其中該親水性透明樹脂為感壓膠或熱融膠。
- 如請求項1所述之軟性透明導電膜之製造方法,其中該親水性透明樹脂為丙烯酸樹脂、聚矽脂或聚氨脂。
- 如請求項1所述之軟性透明導電膜之製造方法,其 中該親水性透明樹脂的厚度約為20μm-70μm。
- 如請求項1所述之軟性透明導電膜之製造方法,其中該些奈米銀線的直徑小於120nm且長徑比為180-220。
- 如請求項1所述之軟性透明導電膜之製造方法,其中該奈米銀線分散液的溶劑為水、乙醇、丙醇或前述溶劑之任意組合。
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US13/072,804 US20120196114A1 (en) | 2011-01-28 | 2011-03-28 | Flexible and Transparent Conductive Film Containing Silver Nanowires and Manufacturing Method Thereof |
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CN105593309A (zh) * | 2013-12-02 | 2016-05-18 | 住友理工株式会社 | 导电性材料和使用其的转换器 |
KR101637920B1 (ko) * | 2015-01-06 | 2016-07-08 | 연세대학교 산학협력단 | 투명필름히터 및 그의 제조방법 |
KR101812024B1 (ko) * | 2016-06-10 | 2017-12-27 | 한국기계연구원 | 열선 및 이를 포함하는 면상 발열 시트 |
TWI641483B (zh) * | 2017-11-08 | 2018-11-21 | 財團法人工業技術研究院 | 可撓導電結構與可撓電子裝置 |
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US7642463B2 (en) * | 2008-01-28 | 2010-01-05 | Honeywell International Inc. | Transparent conductors and methods for fabricating transparent conductors |
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US7642463B2 (en) * | 2008-01-28 | 2010-01-05 | Honeywell International Inc. | Transparent conductors and methods for fabricating transparent conductors |
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