TWI420700B - 太陽能電池 - Google Patents

太陽能電池 Download PDF

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TWI420700B
TWI420700B TW099146606A TW99146606A TWI420700B TW I420700 B TWI420700 B TW I420700B TW 099146606 A TW099146606 A TW 099146606A TW 99146606 A TW99146606 A TW 99146606A TW I420700 B TWI420700 B TW I420700B
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layer
doped
passivation
quantum well
solar cell
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TW201228017A (en
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Yen Cheng Hu
Peng Chen
Shuo Wei Liang
Zhen Cheng Wu
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Au Optronics Corp
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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    • H01L31/02—Details
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    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Description

太陽能電池
本發明是有關於一種太陽能電池，且特別是有關於一種背接觸式太陽能電池(back side contact solar cell)。
矽基太陽能電池為業界常見的一種太陽能電池。矽基太陽能電池的原理是將高純度的半導體材料(矽)加入摻質物使其呈現不同的性質，以形成p型半導體及n型半導體，並將p-n兩型半導體相接合，如此即可形成p-n接面。當太陽光照射到一個p-n結構的半導體時，光子所提供的能量可能會把半導體中的電子激發出來產生電子-電洞對。藉由電極的設置，使電洞往電場的方向移動並使電子往相反的方向移動，如此即可構成太陽能電池。
一般來說，隨著太陽能電池的半導體材料的厚度越薄，太陽能電池的前表面的入射光量以及後表面的光吸收量就會越少。因此，在薄化太陽能電池的發展趨勢之下，如何增加太陽能電池的光吸收量將成為研發的重點之一。
本發明提供一種太陽能電池，其可以增加太陽能電池的光吸收量，以增加太陽能電池的效率。
本發明提出一種太陽能電池，其包括半導體基材、摻雜層、前抗反射層、輔助鈍化層、量子井層、第一鈍化層、第二鈍化層、背反射層、至少一第一電極以及至少一第二電極。半導體基材具有前表面以及後表面，其中半導體基材之前表面具有奈米柱。摻雜層覆蓋在奈米柱之表面。前抗反射層覆蓋摻雜層。輔助鈍化層位於半導體基材之後表面上。量子井層位於輔助鈍化層上，量子井層具有至少一第一摻雜區以及至少一第二摻雜區，其中量子井層包括多晶矽化鍺(Si1-x Gex )且0＜x≦1。第一鈍化層覆蓋量子井層之第一摻雜區。第二鈍化層覆蓋量子井層之第二摻雜區。背反射層覆蓋第一鈍化層以及第二鈍化層。第一電極以及第二電極分別與量子井層之第一摻雜區以及第二摻雜區電性連接。
本發明提出一種太陽能電池，其包括半導體基材、摻雜層、前抗反射層、輔助鈍化層、量子井層、第一鈍化層、第二鈍化層、背反射層、至少一第一電極以及至少一第二電極。半導體基材具有前表面以及後表面，其中半導體基材之前表面具有奈米柱。摻雜層覆蓋在奈米柱之表面。前抗反射層覆蓋摻雜層。輔助鈍化層位於半導體基材之後表面上。量子井層位於輔助鈍化層上，量子井層具有至少一第一摻雜區以及至少一第二摻雜區，其中量子井層包括至少一多晶矽化鍺(Si1-x Gex )以及至少一第二多晶矽化鍺(Si1-y Gey )交替堆疊，且0≦x＜1，0≦y＜1。第一鈍化層覆蓋量子井層之第一摻雜區。第二鈍化層覆蓋量子井層之第二摻雜區。背反射層覆蓋第一鈍化層以及第二鈍化層。第一電極以及第二電極分別與量子井層之第一摻雜區以及第二摻雜區電性連接。
基於上述，本發明之太陽能電池之半導體基材之前表面具有多個奈米柱，且太陽能電池之量子井層包括多晶矽化鍺(Si1-x Gex )且0＜x≦1，或是量子井層是由至少一多晶矽化鍺(Si1-x Gex )以及至少一第二多晶矽化鍺(Si1-y Gey )交替堆疊所構成，且0≦x＜1，0≦y＜1。藉由上述奈米柱與特殊量子井層之材料的搭配，可以有效的提昇太陽能電池的光吸收量，進而提昇太陽能電池的效率。
為讓本發明之上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。
圖1是根據本發明一實施例之太陽能電池的剖面示意圖。請參照圖1，本實施例之太陽能電池包括半導體基材100、摻雜層104、前抗反射層106、輔助鈍化層108、量子井層110、第一鈍化層112、第二鈍化層114、背反射層116、至少一第一電極120以及至少一第二電極122。
半導體基材100具有前表面100a以及後表面100b。半導體基材100例如是摻雜有N型摻質之半導體材料。半導體基材100之材料可為矽、硫化鎘(CdS)、銅銦鎵二硒(CuInGaSe2 ，CIGS)、銅銦二硒(CuInSe2 ，CIS)、碲化鎘(CdTe)、半導體有機材料(organic material)或上述材料堆疊之多層結構。上述之矽包括單晶矽(single crystal silicon)、多晶矽(polycrystal silicon)、非晶矽(amorphous silicon)或是微晶矽(microcrystal silicon)。所述N型摻質可以是選自元素週期表中的第五族元素，例如磷(P)、砷(As)或是銻(Sb)等等。
特別是，上述半導體基材100之前表面100a具有多個奈米柱102。該些奈米柱102之局部放大圖(標號10之處)係如圖3所示。根據本實施例，奈米柱102的高度H約為0.005～20um，較佳為3～20um。奈米柱102的寬度W約為0.005～5um，較佳為0.1～5um。奈米柱102之間的間距S為約0.005～5um，較佳為0.1～5um。在半導體基材100之前表面100a上形成奈米柱102之方法舉例可以採用電化學程序、微影以及蝕刻程序或是光蝕刻程序。
如圖1及圖3所示，摻雜層104是覆蓋在半導體基材100之前表面上100a之奈米柱102之表面上並與其接觸。更詳細來說，摻雜層104是順應地覆蓋在奈米柱102之表面上，而不會將奈米柱102之間的空隙完全填滿。摻雜層104例如是摻雜有N型摻質之半導體材料。所述N型摻質可以是選自元素週期表中的第五族元素，例如磷(P)、砷(As)或是銻(Sb)等等。類似地，摻雜層104之材料可為矽、硫化鎘、銅銦鎵二硒、銅銦二硒、碲化鎘、半導體有機材料或上述材料堆疊之多層結構。上述之矽包括單晶矽、多晶矽、非晶矽或是微晶矽。
前抗反射層106覆蓋摻雜層104。更詳細來說，前抗反射層106是順應地覆蓋在奈米柱102之表面上的摻雜層104上並與其接觸。因此，前抗反射層106也不會將奈米柱102之間的空隙完全填滿。根據本實施例，前抗反射層106為透明層，以使太陽光可以從半導體基材100之前表面100a上方射入太陽能電池之內部。前抗反射層106之材質包括金屬氧化物，例如是銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、或其它合適的氧化物、或者是上述至少二者之堆疊層，或是二氧化矽(SiO2)或氮化矽(SiNx)等可用於抗反射的材料，或上述該些材料之組合。
承上所述，由於覆蓋在奈米柱102表面上之前抗反射層106與摻雜層104不會將奈米柱102之間的空隙完全填滿，因而使半導體基材100之前表面100a之結構具有相當的粗糙程度。換言之，半導體基材100之前表面100a之結構因奈米柱102之故具有較大的表面積。如此，可以增加太陽光的吸收量。
輔助鈍化層108位於半導體基材100之後表面100b上。輔助鈍化層108的材質例如是氮氧化矽、氮化矽或是其他的抗反射材料。
量子井層110位於輔助鈍化層108上，輔助鈍化層108位於量子井層110以及半導體基材100之間，且量子井層110包括多晶矽化鍺(Si1-x Gex )且0＜x≦1。根據本實施例，量子井層110可為單層多晶鍺(poly-Ge)。根據本發明之另一實施例，量子井層110可為單層多晶矽化鍺(poly-SiGe)。
此外，量子井層110具有至少一第一摻雜區110a以及至少一第二摻雜區110b。第一摻雜區110a例如是摻雜N型摻質。所述N型摻質可以是選自元素週期表中的第五族元素，例如磷(P)、砷(As)或是銻(Sb)等等。第二摻雜區110b例如是摻雜P型摻質。所述P型摻質可以是選自元素週期表中三族元素的群組，例如是硼(B)、鋁(Al)、鎵(Ga)、銦(In)等等。
第一鈍化層112覆蓋量子井層110之第一摻雜區110a而不覆蓋量子井層110之第二摻雜區110b。第二鈍化層114覆蓋量子井層110之第二摻雜區110b且至少部份覆蓋第一鈍化層112。根據本實施例，第一鈍化層112包括第一摻雜鈍化材料112a以及第一鈍化材料112b，其中第一摻雜鈍化材料112a夾於第一鈍化材料112b與第一摻雜區110a之間。第二鈍化層114包括第二摻雜鈍化材料114a以及第二鈍化材料114b，其中第二摻雜鈍化材料114a夾於第二鈍化材料114b與第二摻雜區110b之間，第二摻雜鈍化材料114a至少部份覆蓋第一鈍化材料112b。
根據本實施例，第一鈍化層112與第二鈍化層114之材質包括氧化矽、氮化矽或是氮氧化矽，較佳的是氧化矽。更詳細來說，第一鈍化層112之第一摻雜鈍化材料112a包括摻雜N型摻質之氧化矽、氮化矽或是氮氧化矽，且第一鈍化層112之第一鈍化材料112b包括氧化矽、氮化矽或是氮氧化矽。較佳的是，第一鈍化層112之第一摻雜鈍化材料112a包括摻雜N型摻質之氧化矽，且第一鈍化層112之第一鈍化材料112b包括氧化矽。另外，第二鈍化層114之第二摻雜鈍化材料114a包括摻雜P型摻質之氧化矽、氮化矽或是氮氧化矽，且第二鈍化層114之第二鈍化材料114b包括氧化矽、氮化矽或是氮氧化矽。較佳的是，第二鈍化層114之第二摻雜鈍化材料114a包括摻雜P型摻質之氧化矽，且第二鈍化層114之第二鈍化材料114b包括氧化矽。
換言之，量子井層110之第一摻雜區110a的摻雜型態與第一摻雜鈍化材料112a的摻雜型態一致，且量子井層110之第二摻雜區110b的摻雜型態與第二摻雜鈍化材料112b的摻雜型態一致。此外，上述量子井層110之第一摻雜區110a之頂部覆蓋有輔助鈍化層108(例如是氧化矽)且底部覆蓋有第一鈍化層112(例如是氧化矽)，因而可構成氧化矽-量子井層110(第一摻雜區110a)-氧化矽之三明治結構。類似地，上述量子井層110之第二摻雜區110b之頂部覆蓋有輔助鈍化層108(例如是氧化矽)且底部覆蓋有第二鈍化層114(例如是氧化矽)，因而可構成氧化矽-量子井層110(第二摻雜區110b)-氧化矽之三明治結構。
由於量子井層110是採用多晶矽化鍺(Si1-x Gex )且0＜x≦1，且量子井層110具有第一摻雜區110a與第二摻雜區110b以構成p-n接面，其可作為太陽能電池之內部紅外線吸收層。另外，量子井層110與上層輔助鈍化層108與下層之第一/第二鈍化層112/114所構成的三明治結構，可以進一步提昇太陽能電池內部之紅外線吸收層的光吸收率，以及保護量子井層110中之鍺(Ge)不會有氣體因熱逸去(outgasing)的現象。
背反射層116覆蓋第二鈍化層114。背反射層116的材質例如是氮氧化矽、氮化矽或是其他的抗反射材料。
第一電極120以及第二電極122分別與量子井層110之第一摻雜區110a以及第二摻雜區110b電性連接。第一電極120以及第二電極122例如是金屬電極。
承上所述，由於本實施例之太陽能電池是在其半導體基材100之前表面100a設計了複數奈米柱102，因此可以增加太陽能電池之前表面的光吸收量。另外，本實施例之太陽能電池又在其半導體基材100之後表面100b採用多晶矽化鍺(Si1-x Gex )材質之量子井層110，量子井層110中具有p-n接面，且量子井層110更與上層輔助鈍化層108與下層之第一/第二鈍化層112/114所構成的三明治結構。上述之量子井層110的設計可以增加太陽能電池內部之紅外線光吸收率。換言之，本實施例藉由奈米柱102搭配特殊量子井層110之材料與結構之設計，可以有效的增加太陽能電池的光吸收率，進而增加太陽能電池的效率。
圖2是根據本發明另一實施例之太陽能電池的剖面示意圖。圖2之實施例與圖1之實施例相似，因此與圖1相同的元件在此以相同的符號表示，且不再重複贅述。圖2之實施例與圖1之實施例不同之處在於，此實施例之量子井層220是由至少一多晶矽化鍺(Si1-x Gex )以及至少一第二多晶矽化鍺(Si1-y Gey )交替堆疊所構成，其中0≦x＜1，0≦y＜1。本發明不限量子井層220中交替堆疊的多晶矽化鍺(Si1-x Gex )以及第二多晶矽化鍺(Si1-y Gey )的層數，其可以是2層或是2層以上。舉例來說，量子井層220是由矽(Si)/矽化鍺(Si1-x Gex )/鍺(Ge)/矽化鍺(Si1-y Gey )所構成。根據一實施例，量子井層220是由矽化鍺(Si1-x Gex )/矽化鍺(Si1-y Gey )所構成。
類似地，量子井層220具有至少一第一摻雜區220a以及至少一第二摻雜區220b。類似地，第一摻雜區220a例如是摻雜N型摻質。所述N型摻質可以是選自元素週期表中的第五族元素，例如磷(P)、砷(As)或是銻(Sb)等等。第二摻雜區220b例如是摻雜P型摻質。所述P型摻質可以是選自元素週期表中三族元素的群組，例如是硼(B)、鋁(Al)、鎵(Ga)、銦(In)等等。
本實施例之量子井層220是由至少一多晶矽化鍺(Si1-x Gex )以及至少一第二多晶矽化鍺(Si1-y Gey )交替堆疊所構成。此種由多層結構所構成之量子井層220對於太陽能電池內部之紅外線具有更佳的吸收率。
承上所述，本實施例之太陽能電池是在其半導體基材100之前表面100a設計了奈米柱102，因此可以增加太陽能電池之前表面的光吸收量。另外，在本實施例之太陽能電池中，在半導體基材100之後表面100b的量子井層220是由至少一多晶矽化鍺(Si1-x Gex )以及至少一第二多晶矽化鍺(Si1-y Gey )交替堆疊所構成。特別是，量子井層220中具有p-n接面，且量子井層220又與上層輔助鈍化層108與下層之第一/第二鈍化層112/114所構成的三明治結構。上述之量子井層220的設計可以有效地增加太陽能電池內部之紅外線光吸收率。換言之，本實施例藉由奈米柱102搭配特殊量子井層220之材料與結構之設計，可以有效的增加太陽能電池的光吸收率，進而增加太陽能電池的效率。
雖然本發明已以實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，故本發明之保護範圍當視後附之申請專利範圍所界定者為準。
100．．．半導體基材
100a．．．前表面
100b．．．後表面
102．．．奈米柱
104．．．摻雜層
106．．．前抗反射層
108．．．輔助鈍化層
110、220．．．量子井層
110a、220a．．．第一摻雜區
110b、220b．．．第二摻雜區
112,114．．．鈍化層
112a,114a．．．摻雜鈍化材料
112b,114b．．．鈍化材料
116．．．背反射層
120、122．．．電極
圖1是根據本發明一實施例之太陽能電池的剖面示意圖。
圖2是根據本發明另一實施例之太陽能電池的剖面示意圖。
圖3是圖1之標號10的局部放大圖。
100．．．半導體基材
100a．．．前表面
100b．．．後表面
102．．．奈米柱
104．．．摻雜層
106．．．前抗反射層
108．．．輔助鈍化層
110．．．量子井層
110a．．．第一摻雜區
110b．．．第二摻雜區
112,114．．．鈍化層
112a,114a．．．摻雜鈍化材料
112b,114b．．．鈍化材料
116．．．背反射層
120、122．．．電極

Claims (9)

  1. 一種太陽能電池，包括：一半導體基材，其具有一前表面以及一後表面，其中該半導體基材之該前表面具有多個奈米柱；一摻雜層，覆蓋在該些奈米柱之表面；一量子井層，位於該半導體基材之該後表面上，該量子井層具有至少一第一摻雜區以及至少一第二摻雜區，其中該量子井層包括第一多晶矽化鍺(Si1-x Gex )，且0<x≦1；一第一鈍化層，覆蓋該量子井層之該第一摻雜區；一第二鈍化層，覆蓋該量子井層之該第二摻雜區；以及至少一第一電極以及至少一第二電極，分別與該量子井層之該第一摻雜區以及該第二摻雜區電性連接。
  2. 如申請專利範圍第1項所述之太陽能電池，其中該些奈米柱的高度為0.005~20um，其中該些奈米柱的寬度為0.005~5um，其中該些奈米柱之間的間距為0.005~5um。
  3. 如申請專利範圍第1項所述之太陽能電池，更包括：一前抗反射層，覆蓋該摻雜層，該前抗反射層之材料為銦錫氧化物、銦鋅氧化物、鋁錫氧化物、鋁鋅氧化物、銦鍺鋅氧化物、上述至少二者之堆疊層、二氧化矽、氮化矽或其組合；一輔助鈍化層，位於該半導體基材以及該量子井層之間；以及一背反射層，覆蓋該第一鈍化層以及該第二鈍化層。
  4. 如申請專利範圍第1項所述之太陽能電池，其中該第一鈍化層包括一第一摻雜鈍化材料以及一第一鈍化材料，其中該第一摻雜鈍化材料夾於該第一鈍化材料與該第一摻雜區之間。
  5. 如申請專利範圍第1項所述之太陽能電池，其中該第二鈍化層包括一第二摻雜鈍化材料以及一第二鈍化材料，其中該第二摻雜鈍化材料夾於該第二鈍化材料與該第二摻雜區之間。
  6. 如申請專利範圍第1項所述之太陽能電池，其中該量子井層更包括至少一第二多晶矽化鍺(Si1-y Gey )與該第一多晶矽化鍺交替堆疊，且0≦x<1，0≦y<1。
  7. 如申請專利範圍第6項所述之太陽能電池，其中該些奈米柱的高度為0.005~20um，其中該些奈米柱的寬度為0.005~5um，其中該些奈米柱之間的間距為0.005~5um。
  8. 如申請專利範圍第6項所述之太陽能電池，其中該第一鈍化層包括一第一摻雜鈍化材料以及一第一鈍化材料，其中該第一摻雜鈍化材料夾於該第一鈍化材料與該第一摻雜區之間。
  9. 如申請專利範圍第6項所述之太陽能電池，其中該第二鈍化層包括一第二摻雜鈍化材料以及一第二鈍化材料，其中該第二摻雜鈍化材料夾於該第二鈍化材料與該第二摻雜區之間。
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