200847453 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種太陽能電池(solar cell)，並且特別地，本發 ' 明係關於一種能量轉換元件以及應用該能量轉換元件之太陽能電 ^ 池。 【先前技術】 由於溫室效應、氣候變遷以及油價攀升等問題日趨嚴重，加 上重要能源逐漸浮現枯竭危機，再生能源(包括太陽能、風能、地 熱、水力、生質能…等)的發展已十分緊迫。再生能源不僅成為國 際永續等會議討論焦點，也是各國擬定能源政策的要項。依 Refocus Weekly於2004年5月的報導，當前世界使用再生能源僅 占其潛力的1·3 %，且若干再生能源發電成本逐漸下降，因此， 再生能源不僅可因應當前綠色環保潮流，並深具發展潛力。 於前述各項再生能源的發展中，太陽能相關應用是較為成熟 的，域之一。現今我們直接轉換太陽能的方式有兩種：（1)收集 熱能；（2)轉換光能。以收集熱能來說，小規模的民生利用方 =，便是我們現在經常看到的太陽熱水器。較大規模方面則有所 謂的集熱式太陽能發電廠，此種太陽能電廠的運作原理是將太陽 光以反射鏡加以集中，藉著集中太陽能所產生的高熱來使水汽化 產生蒸汽，進而推動渦輪發電機產生電力。 此外’以轉換光能來說，大多是利用所謂的太陽能電池(s〇lar cell)來將光能直接轉換為電能。例如，電子計算機上的太陽能電 池板、住家制上的太陽能轉，皆是利用太陽能電池將光能直 接轉換為電能。自60年***始，美國發射的人造衛星就已經利 用太陽能電池做為能量的來源。到了 7〇年代能源危機時，人們 開始把太陽能電池的細轉移到—般的民生用途上。目前，在美 5 200847453 國、曰本和以色列等國家，已經大量使用太陽能裝置，更朝商業 化的目標前進。 一般而言，現今之太陽能電池之設計主要依據三種效應··（1) 光電效應(photoelectric effecQ，光子射至金屬表面，金屬内的電子 吸收足夠的光子能量，離開金屬，成為真空中的自由電子，並且 可外加電壓形成光電流(photocurrent) ; (2) Dember效應(Dember effect) ’光照射到半導體表面’光子被吸收產生電子-電洞對，並 且進而產生光電流；以及(3)光伏特效應(photovoltaic effect)，光子 射到半導體p_n二極體後，p_n二極體兩端的電極產生可輸出功率 之電壓伏特值。進一步，目前的太陽能電池多是依據光伏特效應 來進行設計。 此外，太陽能電池技術的發展最主要的仍在於提高太陽能電 ，本身的效率。特別是，至今實驗室產出的太陽能電池之效率尚 j近理論_極限；並且，市場上所量產的太陽麟池之平均 1二和實驗室的太陽能電池之效率也存在著不小的差距。這些都 疋未來相關領域之研究所必須要克服的課題。 【發明内容】 址，Ξϋΐ發明之—範•係提供—慨量賴元件，並且特別 能轉換之能量轉換元件祕规觀為魏，也能將電 含-多、ΐί2 ii—較佳具體實施例的—種能量轉換元件，包 接收-第-電能轉化為-第-光能，並且能 相ίΐ—ϊ:凸=複5„包含-?-凸點以及與該第-凸點 該第二表面於該第一點與該第二凸點各具有一峰點，且 乐凸點與该第二凸點間包含有一底點 第-表tii ii—第二電能。特別地，該多層結構具有-列此具有複數個凸點’該複數個凸點係呈週期 進一 6 200847453 y該峰點至5亥底點之垂直距離以及兩個峰點間之水平距離比係 介於0.01至10之間。 θ本發明之另一範疇在於提供一種太陽能電池。特別地，該太 池包含-能量轉換元件，並且具有與發光二級體燈泡相似 之、、、。構，目此能將総觀為絲，也能將電能轉換為光能。 根據本發明之第二較佳具體實施例的—種太陽能電池包含一 ί二ί量讎元件、—第—㈣元件一第二導電元件以及 =特，’糊結構能接收一第一電能轉化 接收二第—光能轉化為—第二電能。該多層結構具有 外弟：ί*?二苐：表面具有呈週期性排列之複數個凸點。此 二二稷idr? 一凸點以及與該第-凸點相鄰之-第 第一二齡亥第二凸點各具有—峰點，且該第二表面 心點之—凸點間包含有—底點。進―步，該奇點至 lit 及兩個峰點間之水平距離比係介於讀至 極，上二笛名‘電元件電連接至該能量轉換元件之-第-電 料則㈣充於該基板之-表=包㈡ 明詳由以下的實施方式對本之發 【實施方式】 二月di ic 二^ 光能。因此能同日U為;轉 電能，也能將電能轉換為 外電讀或發光元件。根據本發明之較佳 7 200847453 具體實施例係揭露如下。 能量示根據本發明之-較佳具體實施例的 棘拖开杜1〜，曰=马4一電月b。於實際應用中，該能量 覆晶式卿_半導體元件(_。論伽 ^且’該多層結構10具有一第一表面⑽，該第一面脱 具J複數個凸點102 ’該複數個凸點1〇2係呈週期性排列。請一 ^參閱，二笛圖二鎌示該等凸點碰之示意圖。該複數個凸點 102包§ 一第一凸點1021以及與該第一凸點1〇21相鄰之一 凸點1023 ’該第-凸點1021與該第二凸點搬3各具有一峰點 1021a、1023a，且該第一表面101於該第一凸點則與該第二凸 點1023間包含有-底點ι〇13，其中該峰點臟②、至該底 點1013之垂直距離D以及兩個峰點間之水平距離w比 0·01至10之間。 / 進一步請參閱圖三，圖三係繪示根據本發明之一具體實施例 的能量轉換元件之剖面圖。如圖三所示，根據本發明之能量轉換 元件1的多層結構10進一步包含一電子供應層(electr〇n 坆 layer) 103、一電洞供應層(hole supply layer) 105 以及一活化層 (active layer) 104。該活化層104位於該電子供應層1〇3以及該電 洞供應層105之間，用以接收該第一電能轉化為該第一光能，並 且月b接收該弟—光能轉化為6亥弟^一電能。特別地，該活化層1〇4 與該第一表面101上之一個凸點102之峰點的垂直距離係介於 0·1 μπι 至 10 μιη 之間。 於本具體實施例中’該電子供應層103具有該第一表面 8 200847453 101，並且，於本具體實施例中，該電洞供應層105進一步包含 多個P型歐姆接觸金屬(ohmic contact metal) 1051，其可由金鈹合 金製成。 於實際應用中，前述之活化層1〇4包含一多層量子井 (Multiple quantum well, MQW)#^ , ^^>fhlgli^(AlInGaP)^it 期結構。因此，該活化層104之光伏特效應(ph〇t〇v〇ltaic effect)的 效率比習知的半導體P-N二極體更高。於實際應用中，此多層量 子井結構可由金屬有機载^相遙晶法(Metai organic vap〇r deposition，MOCVD)製造。 於實際應用中，前述之電子供應層1〇3可以一 N型磷化鎵(n-type GaP)材料製成，而前述之電洞供應層1〇5可以一 p型磷化鎵 (p-type GaP)材料製成。 一步請參閱圖四，圖四係繪示根據本發明之一具體實施例 的能夏轉換元件之剖面圖。如圖四所示，根據本發明之能量轉換 元件1的多層結構10除了前述之電子供應層1〇3、電洞供應層 105以及活化層1〇4之外，進一步包含一導電層1〇6以及一反射 層(reflecting layer) 107。該導電層1〇6位於該活化層1〇4 以及該 反射層107之間，而該反射層1〇7則位於該導電層1〇6與一第二 表面109之間。 该導電層1〇6通常是以透明導電金屬所製成，能用以增加該 多層結構10之透光度。於實際應用中，該導電層106之材料可 以是氧化銦錫(Indium Tin Oxide, ΙΤ0；)。 遠反射層107可將外部光線反射至該活化層刚，也可將活 化層ι〇4所發出之光線反射至該第一表面1〇1。於實際應用中， ，反射層107可由一金屬材料製成，例如铭(A1)、銀(Ag)等金 200847453 進一步請參閱圖五，圖五係繪示根據本發明之一具體實施例 的能量轉換元件之剖面圖。如圖五所示，根據本發明之能量轉換 元件1除了前述之電子供應層104、電洞供應層106、活化層 105、導電層106以及反射層107之外，進一步包含一基材 (substrate) 108、一第一電極12以及一第二電極14。 )於本具體實施例中，該反射層107具有一第二表面109，而 忒基材108則接合於該第二表面1〇9。於實際應用中，該基材 108可以由半導體化合物，如石夕(si)或鍺(Ge)製成，也可由金屬， 如銅(Cu)製成。該第一電極12係設置於該第一表面1〇1上，作為 一打線電極(wired electrode)。該第一電極12可為一 N型歐姆接 觸言屬，並且可由金屬，如金(A)、鈦(Ti)、金鍺(AuGe)等製成。 ，第二電極則設置於該基材108之一第三表面1082上，作為 二電極。該第二電極14可為一 p型歐姆接觸金屬，並且可由金 屬，如金、金鈹(AuBe)等製成。 ，實際應用中’該第—電極12包含複數個電極接觸點 電(未緣示於圖中），並且該複數個電極接觸點中每一 J極接觸點之面積介於該第一表面101之面積的1%至25%之 示於二電極14包含複數個電極接觸點(未緣 於該雜魏點之面積介 響外部光線進入該多#椹1Λ 兄進订调整’通常是以不影 放射至該第-表㈣二卜為優魏層衞所發*之光線 層，面揭露之能量轉換元件具有金屬反射 表面具有成週期性排列之凸點，因此入射之光線能更 200847453 =放率地被傳導至活化層。此外，由於活化層具有多層量子井結 此其對光線之吸收效較高’並且其將光子轉換為電子: 電洞對之比例更高出矽元件許多。 爪本^明之另一較佳具體實施例提供一種太陽能電池(solar =，寺別地，其能將光能轉換為電能，也能將電能轉換為光 貝匕〇 请^®六’圖六鱗示本發狀—具體實施綱太陽能電 如、六所示’該太陽能電池3包含—基板(㈣ 35、-&、—第—導電元件34、—第二導電元件 屏社換兀件&被設置位於該基板30之上，其包含一多 f ΪΪΓΓ於圖中）’並且該多層結構能接收—第—電能轉化 ί結構呈能接收一第二光能轉化為—第二電能。該多 ^點得?、避BWr4jt、面’该第—表面具有複數個凸點，該複數個 Ϊίί;，排列。特別地，該複數個凸點包含-第-凸點以 且^二峰點之二第二凸點。該第-凸點與該第二凸點各 比係介於輸_料辦關之水平距離 旦鏟拖材36被填充於該基板之-表面上，用以包覆該能 裝材料36可視情況選用適當的材料，以達到 細元叙錄，紅減光線更完 之間該】設置於該基板30以及該能量轉換元件32 該第一来件38能將該能量轉換元件32發射之一具有 ^ 射至Ϊ太陽能電池3外部，並且該反射 、/、有一弟一光旎之第二光線反射至該能量轉換元 200847453 件32 〇 元件於ΓίίΓ tr之太陽能電池進一步包含-電源供應 =件，-畜電池’以及-電源儲存元件，如—電容。該電源供 巧過-控制電路板分別電連接至該 作該控，路板選擇該電源供應树提供該第—電能至太陽能^ 池，或疋選擇該電源儲存元件接收並且儲存該第二電能。 士 ^例而言、’ #該太陽能電池被用於接收光能並且轉換為電能 人便可透過該控制電路板選擇該電源儲存元件電連接至該 ΐΐϊϊ讀，以接收並且儲存該魏。反之，#社陽能電池 被用於接收電脸且賴為疏發_，吾人便可透職控制電 ίϋίΐ電源供應元件電連接至該能量轉換元件，以提供該電 月b供月b夏轉換元件發光之用。 ,、凊注意，於本具體實施例之能量轉換元件的結構、材料以及 ，極佈置方式等之具體實例可與前述之能量轉換元件相同，因此 在這裡不作贅述。 顯而易見地，由於本發明所揭露之太陽能電池具有該能量轉 甘元4牛’因此入射之光線能更有效率地被傳導至活化層。此外， ，、對光^之吸收效率更高，並且其將光子轉換為電子—電洞對之 更两出^元件許多。因此，本發明所揭露之太陽能電池能視 而求而進行高效率發光或發電，達到節省能源以及生產成本的目 的0 藉由以上具體實施例之詳述，係希望能更加清楚描述本發明 12 200847453 與精神，而並非以上述所揭露的具體實施例來對本發明之 =可σ以限制。相反地，其目的是希望能涵蓋各種改變及具相 性的安排於本發酬欲巾歡祠範目的範鳴内。 13 200847453 【圖式簡單說明】 圖一係繪示根據本發明之一較佳具體實施例的能量轉換元 之剖面圖。 、 、圖二係繪示根據本發明之一具體實施例的能量轉換元件上 複數個凸點之示意圖。 面囷圖二係繪示根據本發明之一具體實施例的能量轉換元件之剖 面固圖四係繪不根據本發明之一具體實施例的能量轉換元件之剖 面圖圖五係繪示根據本發明之一具體實施例的能量轉換元件之剖 圖六係繪示本發明之一具體實施例的太陽能電池之示意圖。 【主要元件符號說明】 1、32 :能量轉換元件 10 :多層結構 101 :第一表面 102 :凸點 1021 :第一凸點 1023 :第二凸點 1021a、1023a ··峰點 1013 :底點 D:垂直距離 W :水平距離 103 ··電子供應層 104 :活化層 105 :電洞供應層 14 200847453 1051 : P型歐姆接觸金屬 107 ··反射層 108 :基材 12 ·•第一電極 3:太陽能電池 30 :基板 34 35 :第二導電元件 36 38 :反射元件 106 ··導電層 109 ··第二表面 1082 :第三表面 14 :第二電極 :第一導電元件 •封裝材料 15200847453 IX. The invention relates to a solar cell, and in particular, the present invention relates to an energy conversion element and a solar cell using the same. . [Prior Art] Due to the increasing effects of the greenhouse effect, climate change and rising oil prices, coupled with the gradual emergence of important energy sources, the development of renewable energy (including solar energy, wind energy, geothermal energy, hydropower, biomass, etc.) has been very urgent. Renewable energy has not only become the focus of discussions at international conferences, but also an important item in the formulation of energy policies. According to Refocus Weekly's report in May 2004, the current world's use of renewable energy only accounts for 3% of its potential, and the cost of some renewable energy power generation is gradually decreasing. Therefore, renewable energy can not only respond to current green environmental trends, but also Development potential. Among the aforementioned renewable energy developments, solar energy related applications are one of the more mature domains. There are two ways we can directly convert solar energy today: (1) collecting heat energy; and (2) converting light energy. In terms of collecting heat, small-scale people's livelihood users = is the solar water heater we often see now. On a larger scale, there is a so-called collector solar power plant, which operates on the principle of concentrating sunlight as a mirror, and by concentrating the high heat generated by solar energy, vaporizes water to generate steam, which in turn drives the turbine. The generator produces electricity. In addition, in terms of converted light energy, most of the so-called solar cells are used to convert light energy directly into electrical energy. For example, solar panels on electronic computers and solar power on homes use solar cells to convert light energy directly into electricity. Since the 1960s, satellites launched by the United States have used solar cells as a source of energy. By the time of the energy crisis of the 1970s, people began to shift the fineness of solar cells to the general use of people's livelihood. At present, in the United States 5 200847453 countries, Sakamoto and Israel, solar installations have been used in large quantities, and they are moving towards commercialization. In general, the design of today's solar cells is mainly based on three effects. (1) Photoelectric effecQ, photons are emitted to the metal surface, and electrons in the metal absorb enough photon energy to leave the metal and become free electrons in the vacuum. And a voltage can be applied to form photocurrent; (2) Dember effect "Light illuminates the semiconductor surface" photons are absorbed to generate electron-hole pairs, and in turn generate photocurrent; and (3) photovoltaic effects Photovoltaic effect, after the photon hits the semiconductor p_n diode, the electrode at both ends of the p_n diode generates a voltage volt value of the output power. Further, the current solar cells are mostly designed according to the photovoltaic effect. The most important development of solar cell technology is still to improve the efficiency of solar power, in particular, the efficiency of solar cells produced by the laboratory to date is still close to the theoretical limit; and the average of the solar linings produced in the market. There is also a big gap between the efficiency of solar cells in the laboratory and the laboratory. The subject of research in related fields must be overcome. [Summary of the Invention] The address, the invention--the system provides the gene-quantity-dependent components, and the energy conversion component of the special conversion can be Wei, and can also contain electricity. - 。 。 。 。 - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - And the second surface of the first bump and the second bump respectively have a peak point, and the bottom bump and the second bump comprise a bottom point - a table tii ii - a second In particular, the multi-layer structure has a column having a plurality of bumps. The plurality of bumps are in a period of 6 200847453 y. The vertical distance from the peak point to the 5th point and the horizontal distance between the two peaks The ratio is between 0.01 and 10. θ Another aspect of the invention is to provide a solar cell. In particular, the cell comprises an energy conversion element and has a similar structure to the light-emitting diode bulb. , this can turn the view into silk, but also convert electrical energy into light energy. According to a second preferred embodiment of the present invention, a solar cell includes a 雠 ί 雠 element, a — (4) element, a second conductive element, and a “paste structure” capable of receiving a first electrical energy conversion. Receiving two first-light energy is converted into-second electric energy. The multi-layer structure has a foreign brother: ί*? two 苐: the surface has a plurality of bumps arranged periodically. The two 稷 idr? a bump and The second bumps of the first and second ridges each have a peak point, and the bump of the second surface core includes a bottom point. The singular point is Lit and the horizontal distance ratio between the two peaks are between the read to the pole, the upper two flute names 'electrical components are electrically connected to the energy conversion element - the first electric material is (4) charged to the substrate - the table = package (b) The following is an embodiment of the present invention [Embodiment] February di ic II light energy. Therefore, it can be U on the same day; it can also convert electrical energy into external electrical reading or illuminating components. Preferred Embodiments According to the Invention 7 200847453 The specific embodiments are disclosed below. The energy indicates that the spine is towed according to the preferred embodiment of the present invention, 曰 = horse 4, a month b. In practical applications, the energy flip-chip type semiconductor device has a first surface (10), and the first surface is provided with a plurality of bumps 102'. The points 1〇2 are periodically arranged. Please refer to the two flute diagrams for the bumps. The plurality of bumps 102 include a first bump 1021 and the first bump 1〇21 adjacent one of the bumps 1023 ′′ the first bumps 1021 and the second bumps 3 each have a peak point 1021a, 1023a, and the first surface 101 is at the first bump and the second The bump 1023 includes a bottom point ι〇13, wherein the peak point 2 is 2, the vertical distance D to the bottom point 1013, and the horizontal distance w between the two peak points is between 0·01 and 10. / Further Referring to Figure 3, there is shown a cross-sectional view of an energy conversion element in accordance with an embodiment of the present invention. As shown in Figure 3, the multilayer structure 10 of the energy conversion element 1 according to the present invention further includes an electron supply layer. (electr〇n 坆layer) 103, a hole supply layer 105 and an active layer 104. The activation layer 104 is located between the electron supply layer 1〇3 and the hole supply layer 105 for receiving the first electrical energy to be converted into the first light energy, and receiving the brother-light energy into 6 hai In particular, the vertical distance between the active layer 1〇4 and the peak point of a bump 102 on the first surface 101 is between 0·1 μπι and 10 μιη. The electron supply layer 103 has the first surface 8 200847453 101, and, in this embodiment, the hole supply layer 105 further includes a plurality of P-type ohmic contact metals 1051, which may be gold Made of tantalum alloy. In practical applications, the aforementioned active layer 1〇4 comprises a multi-layer quantum well (MQW)#^ , ^^>fhlgli^(AlInGaP)^it period structure. The efficiency of the photovoltaic layer of the active layer 104 is higher than that of the conventional semiconductor PN diode. In practical applications, the multilayer quantum well structure can be subjected to a metal organic phase-transfer method. (Metai organic vap〇r deposition, MOCVD). In practical applications The foregoing electron supply layer 1〇3 may be made of an N-type GaP material, and the aforementioned hole supply layer 1〇5 may be made of a p-type gallium phosphide (p-type GaP) material. Referring to FIG. 4, FIG. 4 is a cross-sectional view showing a summer conversion component according to an embodiment of the present invention. As shown in FIG. 4, the multilayer structure 10 of the energy conversion element 1 according to the present invention further comprises a conductive layer 1〇6 in addition to the aforementioned electron supply layer 1〇3, the hole supply layer 105 and the activation layer 1〇4. And a reflective layer 107. The conductive layer 1〇6 is located between the active layer 1〇4 and the reflective layer 107, and the reflective layer 1〇7 is located between the conductive layer 1〇6 and a second surface 109. The conductive layer 1〇6 is usually made of a transparent conductive metal and can be used to increase the transmittance of the multilayer structure 10. In practical applications, the material of the conductive layer 106 may be Indium Tin Oxide (ΙΤ0;). The far reflecting layer 107 can reflect external light to the active layer, and can also reflect the light emitted by the active layer ι4 to the first surface 〇1. In practical applications, the reflective layer 107 can be made of a metal material, such as Ming (A1), silver (Ag), etc. Gold 200847453. Further, please refer to FIG. 5 , which illustrates energy according to an embodiment of the present invention. A cross-sectional view of the conversion element. As shown in FIG. 5, the energy conversion element 1 according to the present invention further includes a substrate in addition to the aforementioned electron supply layer 104, hole supply layer 106, active layer 105, conductive layer 106, and reflective layer 107. 108. A first electrode 12 and a second electrode 14. In the present embodiment, the reflective layer 107 has a second surface 109 to which the tantalum substrate 108 is bonded. In practical applications, the substrate 108 may be made of a semiconductor compound such as Si or Ge, or may be made of a metal such as copper (Cu). The first electrode 12 is disposed on the first surface 1〇1 as a wired electrode. The first electrode 12 may be an N-type ohmic contact and may be made of a metal such as gold (A), titanium (Ti), gold (AuGe) or the like. The second electrode is disposed on the third surface 1082 of the substrate 108 as a second electrode. The second electrode 14 may be a p-type ohmic contact metal and may be made of a metal such as gold, AuBe or the like. In actual application, the first electrode 12 includes a plurality of electrode contact points (not shown in the figure), and an area of each of the plurality of electrode contact points is between the first surface 101 1% to 25% of the area shown in the second electrode 14 includes a plurality of electrode contact points (not due to the area of the impurity point, which affects the external light entering the multi-element). Up to the first table (four) two Bu is the light layer issued by the Wei Wei layer, the surface energy revealing element has a metal reflective surface with a periodically arranged bump, so the incident light can be more 200847453 = rate It is conducted to the active layer. In addition, since the active layer has a multi-layer quantum well junction, it has a higher absorption efficiency for light and it converts photons into electrons: the ratio of holes to holes is higher than that of the elements. Another preferred embodiment provides a solar cell (solar =, temple, which can convert light energy into electrical energy, and can also convert electrical energy into light 匕〇 匕〇 ® ® ® ® ® ® ® ® ® ® ® ® - Specific implementation of the solar power, as shown in six 'The solar cell 3 includes a substrate ((4) 35, -&, - a first conductive element 34, a second conductive element screen changer & is disposed above the substrate 30, which contains a plurality of f ΪΪΓΓ In the figure) 'and the multi-layer structure can receive - the first - electric energy conversion ί structure is capable of receiving a second light energy converted into - the second electric energy. The multi-point is obtained, the BWr4jt is avoided, and the surface of the surface is a plurality of bumps, the plurality of bumps, in particular, the plurality of bumps comprising a -th bump and two second bumps of the two peaks. The first bump and the second bump The point ratios are between the horizontal and the horizontal distances of the material to be filled. The shovel material 36 is filled on the surface of the substrate to cover the energy-filling material 36, and the appropriate material can be selected as needed to achieve the detailed Between the red light reduction and the red light reduction, the first input member 38 can emit one of the energy conversion elements 32 to the outside of the solar cell 3, and the light emitting element 32 is disposed on the substrate 30 and the energy conversion element 32. Reflection, /, a second light of a brother and a light is reflected to the energy conversion element 200847453 32 〇 components in ΓίίΓ tr solar cells further include - power supply = parts, - animal battery 'and - power storage components, such as - capacitors. The power supply for the control - circuit board is electrically connected to the control, the road The board selects the power supply tree to provide the first power to the solar cell, or selects the power storage component to receive and store the second power. For example, 'the solar cell is used to receive light energy and convert The power storage device can select the power storage component to be electrically connected to the reading through the control circuit board to receive and store the Wei. Otherwise, the #阳阳能电池 is used to receive the electric face and is used for thinning_, The power supply component can be electrically connected to the energy conversion component to provide illumination for the monthly b-day conversion component. It should be noted that the specific examples of the structure, material, and arrangement of the energy conversion elements of the present embodiment may be the same as those of the foregoing energy conversion elements, and thus will not be described herein. Obviously, since the solar cell disclosed in the present invention has the energy transfer element 4, the incident light can be more efficiently conducted to the active layer. In addition, the absorption efficiency of the light is higher, and it converts the photons into electron-hole pairs. Therefore, the solar cell disclosed in the present invention can perform high-efficiency illuminating or power generation as desired, thereby achieving energy saving and production cost. The detailed description of the above specific embodiments is intended to more clearly describe the present invention 12 200847453 The invention may be limited by the spirit, and not by the specific embodiments disclosed above. On the contrary, the purpose is to hope that it can cover all kinds of changes and phased arrangements in Fan Ming, the fan of this reward. 13 200847453 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing an energy conversion element in accordance with a preferred embodiment of the present invention. 2 and FIG. 2 are schematic diagrams showing a plurality of bumps on an energy conversion element according to an embodiment of the present invention. 2 is a cross-sectional view of an energy conversion element according to an embodiment of the present invention. FIG. 5 is a cross-sectional view of an energy conversion element according to an embodiment of the present invention. FIG. A cross-sectional view of an energy conversion element of one embodiment shows a schematic diagram of a solar cell according to an embodiment of the present invention. [Description of main component symbols] 1. 32: Energy conversion element 10: multilayer structure 101: first surface 102: bump 1021: first bump 1023: second bump 1021a, 1023a · peak point 1013: bottom point D : vertical distance W : horizontal distance 103 · electronic supply layer 104 : active layer 105 : hole supply layer 14 200847453 1051 : P type ohmic contact metal 107 · · reflective layer 108 : substrate 12 ·• first electrode 3: solar energy Battery 30: substrate 34 35: second conductive element 36 38 : reflective element 106 · conductive layer 109 · second surface 1082: third surface 14: second electrode: first conductive element • encapsulating material 15