CN102142478B - 太阳能电池 - Google Patents

太阳能电池 Download PDF

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CN102142478B
CN102142478B CN2011100459502A CN201110045950A CN102142478B CN 102142478 B CN102142478 B CN 102142478B CN 2011100459502 A CN2011100459502 A CN 2011100459502A CN 201110045950 A CN201110045950 A CN 201110045950A CN 102142478 B CN102142478 B CN 102142478B
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胡雁程
陈芃
梁硕玮
吴振诚
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AU Optronics Corp
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Abstract

本发明公开一种太阳能电池，其包括半导体基底、掺杂层、量子阱层、第一钝化层、第二钝化层、第一电极以及第二电极。半导体基底具有前表面以及后表面，且半导体基底的前表面为纳米柱。掺杂层覆盖在纳米柱的表面。电极层覆盖掺杂层。量子阱层位于半导体基底上，量子阱层具有至少一第一掺杂区以及至少一第二掺杂区，其中量子阱层包括多晶硅化锗(Si1-xGex)。第一钝化层覆盖量子阱层的第一掺杂区。第二钝化层覆盖量子阱层的第二掺杂区。第一电极以及第二电极分别与量子阱层的第一掺杂区以及第二掺杂区电性连接。

Description

太阳能电池
技术领域
本发明涉及一种太阳能电池，且特别是涉及一种背接触式太阳能电池(back side contact solar cell)。
背景技术
硅基太阳能电池为业界常见的一种太阳能电池。硅基太阳能电池的原理是将高纯度的半导体材料(硅)加入掺杂物使其呈现不同的性质，以形成p型半导体及n型半导体，并将p-n两型半导体相接合，如此即可形成p-n结面。当太阳光照射到一个p-n结构的半导体时，光子所提供的能量可能会把半导体中的电子激发出来产生电子-空穴对。通过电极的设置，使空穴往电场的方向移动并使电子往相反的方向移动，如此即可构成太阳能电池。
一般来说，随着太阳能电池的半导体材料的厚度越薄，太阳能电池的前表面的入射光量以及后表面的光吸收量就会越少。因此，在薄化太阳能电池的发展趋势之下，如何增加太阳能电池的光吸收量将成为研发的重点之一。
发明内容
本发明提供一种太阳能电池，其可以增加太阳能电池的光吸收量，以增加太阳能电池的效率。
本发明提出一种太阳能电池，其包括半导体基底、掺杂层、前抗反射层、辅助钝化层、量子阱层、第一钝化层、第二钝化层、背反射层、至少一第一电极以及至少一第二电极。半导体基底具有前表面以及后表面，其中半导体基底的前表面具有纳米柱。掺杂层覆盖在纳米柱的表面。前抗反射层覆盖掺杂层。辅助钝化层位于半导体基底的后表面上。量子阱层位于辅助钝化层上，量子阱层具有至少一第一掺杂区以及至少一第二掺杂区，其中量子阱层包括多晶硅化锗(Si1-xGex)且0＜x≤1。第一钝化层覆盖量子阱层的第一掺杂区。第二钝化层覆盖量子阱层的第二掺杂区。背反射层覆盖第一钝化层以及第二钝化层。第一电极以及第二电极分别与量子阱层的第一掺杂区以及第二掺杂区电性连接。
本发明提出一种太阳能电池，其包括半导体基底、掺杂层、前抗反射层、辅助钝化层、量子阱层、第一钝化层、第二钝化层、背反射层、至少一第一电极以及至少一第二电极。半导体基底具有前表面以及后表面，其中半导体基底的前表面具有纳米柱。掺杂层覆盖在纳米柱的表面。前抗反射层覆盖掺杂层。辅助钝化层位于半导体基底的后表面上。量子阱层位于辅助钝化层上，量子阱层具有至少一第一掺杂区以及至少一第二掺杂区，其中量子阱层包括至少一多晶硅化锗(Si1-xGex)以及至少一第二多晶硅化锗(Si1-yGey)交替堆叠，且0≤x＜1，0≤y＜1。第一钝化层覆盖量子阱层的第一掺杂区。第二钝化层覆盖量子阱层的第二掺杂区。背反射层覆盖第一钝化层以及第二钝化层。第一电极以及第二电极分别与量子阱层的第一掺杂区以及第二掺杂区电性连接。
基于上述，本发明的太阳能电池的半导体基底的前表面具有多个纳米柱，且太阳能电池的量子阱层包括多晶硅化锗(Si1-xGex)且0＜x≤1，或是量子阱层是由至少一多晶硅化锗(Si1-xGex)以及至少一第二多晶硅化锗(Si1-yGey)交替堆叠所构成，且0≤x＜1，0≤y＜1。通过上述纳米柱与特殊量子阱层的材料的搭配，可以有效的提升太阳能电池的光吸收量，进而提升太阳能电池的效率。
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合附图作详细说明如下。
附图说明
图1是根据本发明实施例的太阳能电池的剖面示意图。
图2是根据本发明另一实施例的太阳能电池的剖面示意图。
图3是图1的标号10的局部放大图。
附图标记说明
100：半导体基底
100a：前表面
100b：后表面
102：纳米柱
104：掺杂层
106：前抗反射层
108：辅助钝化层
110、220：量子阱层
110a、220a：第一掺杂区
110b、220b：第二掺杂区
112，114：钝化层
112a，114a：掺杂钝化材料
112b，114b：钝化材料
116：背反射层
120、122：电极
具体实施方式
图1是根据本发明实施例的太阳能电池的剖面示意图。请参照图1，本实施例的太阳能电池包括半导体基底100、掺杂层104、前抗反射层106、辅助钝化层108、量子阱层110、第一钝化层112、第二钝化层114、背反射层116、至少一第一电极120以及至少一第二电极122。
半导体基底100具有前表面100a以及后表面100b。半导体基底100例如是掺杂有N型掺质的半导体材料。半导体基底100的材料可为硅、硫化镉(CdS)、铜铟镓二硒(CuInGaSe2，CIGS)、铜铟二硒(CuInSe2，CIS)、碲化镉(CdTe)、半导体有机材料(organic material)或上述材料堆叠的多层结构。上述的硅包括单晶硅(single crystal silicon)、多晶硅(polycrystal silicon)、非晶硅(amorphous silicon)或是微晶硅(microcrystal silicon)。所述N型掺质可以是选自元素周期表中的第五族元素，例如磷(P)、砷(As)或是锑(Sb)等。
特别是，上述半导体基底100的前表面100a具有多个纳米柱102。该多个纳米柱102的局部放大图(标号10的处)如图3所示。根据本实施例，纳米柱102的高度H约为0.005～20um，优选为3～20um。纳米柱102的宽度W约为0.005～5um，优选为0.1～5um。纳米柱102之间的间距S为约0.005～5um，优选为0.1～5um。在半导体基底100的前表面100a上形成纳米柱102的方法举例可以采用电化学方法、曝光以及蚀刻方法或是光蚀刻方法。
如图1及图3所示，掺杂层104是覆盖在半导体基底100的前表面100a上的纳米柱102的表面上并与其接触。更详细来说，掺杂层104是顺应地覆盖在纳米柱102的表面上，而不会将纳米柱102之间的空隙完全填满。掺杂层104例如是掺杂有N型掺质的半导体材料。所述N型掺质可以是选自元素周期表中的第五族元素，例如磷(P)、砷(As)或是锑(Sb)等等。类似地，掺杂层104的材料可为硅、硫化镉、铜铟镓二硒、铜铟二硒、碲化镉、半导体有机材料或上述材料堆叠的多层结构。上述的硅包括单晶硅、多晶硅、非晶硅或是微晶硅。
前抗反射层106覆盖掺杂层104。更详细来说，前抗反射层106是顺应地覆盖在纳米柱102的表面上的掺杂层104上并与其接触。因此，前抗反射层106也不会将纳米柱102之间的空隙完全填满。根据本实施例，前抗反射层106为透明层，以使太阳光可以从半导体基底100的前表面100a上方射入太阳能电池的内部。前抗反射层106的材料包括金属氧化物，例如是铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物、或其它合适的氧化物、或者是上述至少二者的堆叠层，或是二氧化硅(SiO2)或氮化硅(SiNx)等可用于抗反射的材料，或上述该些材料的组合。
承上所述，由于覆盖在纳米柱102表面上的前抗反射层106与掺杂层104不会将纳米柱102之间的空隙完全填满，因而使半导体基底100的前表面100a的结构具有相当的粗糙程度。换言之，半导体基底100的前表面100a的结构因纳米柱102的故具有较大的表面积。如此，可以增加太阳光的吸收量。
辅助钝化层108位于半导体基底100的后表面100b上。辅助钝化层108的材料例如是氮氧化硅、氮化硅或是其他的抗反射材料。
量子阱层110位于辅助钝化层108上，辅助钝化层108位于量子阱层110以及半导体基底100之间，且量子阱层110包括多晶硅化锗(Si1-xGex)且0＜x≤1。根据本实施例，量子阱层110可为单层多晶锗(poly-Ge)。根据本发明的另一实施例，量子阱层110可为单层多晶硅化锗(poly-SiGe)。
此外，量子阱层110具有至少一第一掺杂区110a以及至少一第二掺杂区110b。第一掺杂区110a例如是掺杂N型掺质。所述N型掺质可以是选自元素周期表中的第五族元素，例如磷(P)、砷(As)或是锑(Sb)等等。第二掺杂区110b例如是掺杂P型掺质。所述P型掺质可以是选自元素周期表中第三族元素的群组，例如是硼(B)、铝(Al)、镓(Ga)、铟(In)等等。
第一钝化层112覆盖量子阱层110的第一掺杂区110a而不覆盖量子阱层110的第二掺杂区110b。第二钝化层114覆盖量子阱层110的第二掺杂区110b且至少部分覆盖第一钝化层112。根据本实施例，第一钝化层112包括第一掺杂钝化材料112a以及第一钝化材料112b，其中第一掺杂钝化材料112a夹于第一钝化材料112b与第一掺杂区110a之间。第二钝化层114包括第二掺杂钝化材料114a以及第二钝化材料114b，其中第二掺杂钝化材料114a夹于第二钝化材料114b与第二掺杂区110b之间，第二掺杂钝化材料114a至少部分覆盖第一钝化材料112b。
根据本实施例，第一钝化层112与第二钝化层114的材料包括氧化硅、氮化硅或是氮氧化硅，优选的是氧化硅。更详细来说，第一钝化层112的第一掺杂钝化材料112a包括掺杂N型掺质的氧化硅、氮化硅或是氮氧化硅，且第一钝化层112的第一钝化材料112b包括氧化硅、氮化硅或是氮氧化硅。优选的是，第一钝化层112的第一掺杂钝化材料112a包括掺杂N型掺质的氧化硅，且第一钝化层112的第一钝化材料112b包括氧化硅。另外，第二钝化层114的第二掺杂钝化材料114a包括掺杂P型掺质的氧化硅、氮化硅或是氮氧化硅，且第二钝化层114的第二钝化材料114b包括氧化硅、氮化硅或是氮氧化硅。优选的是，第二钝化层114的第二掺杂钝化材料114a包括掺杂P型掺质的氧化硅，且第二钝化层114的第二钝化材料114b包括氧化硅。
换言之，量子阱层110的第一掺杂区110a的掺杂型态与第一掺杂钝化材料112a的掺杂型态一致，且量子阱层110的第二掺杂区110b的掺杂型态与第二掺杂钝化材料112b的掺杂型态一致。此外，上述量子阱层110的第一掺杂区110a的顶部覆盖有辅助钝化层108(例如是氧化硅)且底部覆盖有第一钝化层112(例如是氧化硅)，因而可构成氧化硅-量子阱层110(第一掺杂区110a)-氧化硅的三明治结构。类似地，上述量子阱层110的第二掺杂区110b的顶部覆盖有辅助钝化层108(例如是氧化硅)且底部覆盖有第二钝化层114(例如是氧化硅)，因而可构成氧化硅-量子阱层110(第二掺杂区110b)-氧化硅的三明治结构。
由于量子阱层110是采用多晶硅化锗(Si1-xGex)且0＜x≤1，且量子阱层110具有第一掺杂区110a与第二掺杂区110b以构成p-n结面，其可作为太阳能电池的内部红外线吸收层。另外，量子阱层110与上层辅助钝化层108与下层的第一/第二钝化层112/114所构成的三明治结构，可以进一步提升太阳能电池内部的红外线吸收层的光吸收率，以及保护量子阱层110中的锗(Ge)不会有气体因热逸去(outgasing)的现象。
背反射层116覆盖第二钝化层114。背反射层116的材料例如是氮氧化硅、氮化硅或是其他的抗反射材料。
第一电极120以及第二电极122分别与量子阱层110的第一掺杂区110a以及第二掺杂区110b电性连接。第一电极120以及第二电极122例如是金属电极。
承上所述，由于本实施例的太阳能电池是在其半导体基底100的前表面100a设计了多个纳米柱102，因此可以增加太阳能电池的前表面的光吸收量。另外，本实施例的太阳能电池又在其半导体基底100的后表面100b采用多晶硅化锗(Si1-xGex)材料的量子阱层110，量子阱层110中具有p-n结面，且量子阱层110还与上层辅助钝化层108与下层的第一/第二钝化层112/114所构成的三明治结构。上述的量子阱层110的设计可以增加太阳能电池内部的红外线光吸收率。换言之，本实施例通过纳米柱102搭配特殊量子阱层110的材料与结构的设计，可以有效的增加太阳能电池的光吸收率，进而增加太阳能电池的效率。
图2是根据本发明另一实施例的太阳能电池的剖面示意图。图2的实施例与图1的实施例相似，因此与图1相同的元件在此以相同的符号表示，且不再重复赘述。图2的实施例与图1的实施例不同之处在于，此实施例的量子阱层220是由至少一多晶硅化锗(Si1-xGex)以及至少一第二多晶硅化锗(Si1-yGey)交替堆叠所构成，其中0≤x＜1，0≤y＜1。本发明不限量子阱层220中交替堆叠的多晶硅化锗(Si1-xGex)以及第二多晶硅化锗(Si1-yGey)的层数，其可以是2层或是2层以上。举例来说，量子阱层220是由硅(Si)/硅化锗(Si1-xGex)/锗(Ge)/硅化锗(Si1-yGey)所构成。根据实施例，量子阱层220是由硅化锗(Si1-xGex)/硅化锗(Si1-yGey)所构成。
类似地，量子阱层220具有至少一第一掺杂区220a以及至少一第二掺杂区220b。类似地，第一掺杂区220a例如是掺杂N型掺质。所述N型掺质可以是选自元素周期表中的第五族元素，例如磷(P)、砷(As)或是锑(Sb)等等。第二掺杂区220b例如是掺杂P型掺质。所述P型掺质可以是选自元素周期表中第三族元素的群组，例如是硼(B)、铝(Al)、镓(Ga)、铟(In)等等。
本实施例的量子阱层220是由至少一多晶硅化锗(Si1-xGex)以及至少一第二多晶硅化锗(Si1-yGey)交替堆叠所构成。此种由多层结构所构成的量子阱层220对于太阳能电池内部的红外线具有更佳的吸收率。
承上所述，本实施例的太阳能电池是在其半导体基底100的前表面100a设计了纳米柱102，因此可以增加太阳能电池的前表面的光吸收量。另外，在本实施例的太阳能电池中，在半导体基底100的后表面100b的量子阱层220是由至少一多晶硅化锗(Si1-xGex)以及至少一第二多晶硅化锗(Si1-yGey)交替堆叠所构成。特别是，量子阱层220中具有p-n结面，且量子阱层220又与上层辅助钝化层108与下层的第一/第二钝化层112/114所构成的三明治结构。上述的量子阱层220的设计可以有效地增加太阳能电池内部的红外线光吸收率。换言之，本实施例通过纳米柱102搭配特殊量子阱层220的材料与结构的设计，可以有效的增加太阳能电池的光吸收率，进而增加太阳能电池的效率。
虽然本发明已以实施例披露如上，然其并非用以限定本发明，任何所属技术领域中普通技术人员，在不脱离本发明的精神和范围内，当可作些许的更动与润饰，故本发明的保护范围当视权利要求所界定为准。

Claims (10)

1.一种太阳能电池，包括：
半导体基底，其具有前表面以及后表面，其中该半导体基底的该前表面具有多个纳米柱；
掺杂层，覆盖在该多个纳米柱的表面；
量子阱层，位于该半导体基底的后表面上，该量子阱层具有彼此并列的至少一第一掺杂区以及至少一第二掺杂区，其中该量子阱层包括第一多晶硅化锗Si1-xGex；
第一钝化层，覆盖该量子阱层的该第一掺杂区；
第二钝化层，覆盖该量子阱层的该第二掺杂区；以及
至少一第一电极以及至少一第二电极，分别与该量子阱层的该第一掺杂区以及该第二掺杂区电性连接。
2.如权利要求1所述的太阳能电池，其中该多个纳米柱的高度为0.005～20um，其中该多个纳米柱的宽度为0.005～5um，其中该多个纳米柱之间的间距为0.005～5um。
3.如权利要求1所述的太阳能电池，还包括：
前抗反射层，覆盖该掺杂层，该前抗反射层的材料为铟锡氧化物、铟锌氧化物、铝锡氧化物、铝锌氧化物、铟锗锌氧化物、上述至少二者的堆叠层、二氧化硅、氮化硅或其组合；
辅助钝化层，位于该半导体基底以及该量子阱层之间；以及
背反射层，覆盖该第一钝化层以及该第二钝化层。
4.如权利要求1所述的太阳能电池，其中该第一钝化层包括第一掺杂钝化材料以及第一钝化材料，其中该第一掺杂钝化材料夹于该第一钝化材料与该第一掺杂区之间。
5.如权利要求1所述的太阳能电池，其中该第二钝化层包括第二掺杂钝化材料以及第二钝化材料，其中该第二掺杂钝化材料夹于该第二钝化材料与该第二掺杂区之间。
6.如权利要求1所述的太阳能电池，其中0＜x≦1。
7.如权利要求1所述的太阳能电池，其中该量子阱层还包括至少一第二多晶硅化锗Si1-yGey，该第二多晶硅化锗与该第一多晶硅化锗交替堆叠，且0≦x＜1，0≦y＜1。
8.如权利要求7所述的太阳能电池，其中该多个纳米柱的高度为0.005～20um，其中该多个纳米柱的宽度为0.005～5um，其中该多个纳米柱之间的间距为0.005～5um。
9.如权利要求7所述的太阳能电池，其中该第一钝化层包括第一掺杂钝化材料以及第一钝化材料，其中该第一掺杂钝化材料夹于该第一钝化材料与该第一掺杂区之间。
10.如权利要求7所述的太阳能电池，其中该第二钝化层包括第二掺杂钝化材料以及第二钝化材料，其中该第二掺杂钝化材料夹于该第二钝化材料与该第二掺杂区之间。
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