TWI407478B - Method for making field emission device - Google Patents
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本發明涉及一種場發射裝置的製備方法。 The invention relates to a method of preparing a field emission device.
場發射裝置係場發射電子器件，如場發射顯示器的重要元件。 Field emission devices are field emission electronics, such as important components of field emission displays.
先前技術中的場發射裝置通常包括一絕緣基底；一設置於該絕緣基底上的陰極電極；複數個設置於陰極電極上的電子發射體；一設置於該絕緣基底上的第一絕緣隔離層，所述第一絕緣隔離層具有通孔，所述電子發射體通過該通孔暴露，以使電子發射體發射的電子通過該通孔射出；以及一陽極電極，所述陽極電極與陰極電極間隔設置。當所述場發射裝置工作時，向陽極電極施加一高電位，向陰極電極施加一低電位。故，電子發射體發射的電子通過該通孔射陽極。 The field emission device of the prior art generally includes an insulating substrate; a cathode electrode disposed on the insulating substrate; a plurality of electron emitters disposed on the cathode electrode; and a first insulating spacer disposed on the insulating substrate, The first insulating isolation layer has a through hole through which the electron emitter is exposed to emit electrons emitted from the electron emitter through the through hole, and an anode electrode which is spaced apart from the cathode electrode . When the field emission device is operating, a high potential is applied to the anode electrode and a low potential is applied to the cathode electrode. Therefore, electrons emitted from the electron emitter pass through the through hole to illuminate the anode.
然而，電子發射體發射的電子會與真空中游離的氣體分子碰撞，從而使氣體分子電離產生離子。而且，該離子會向處於低電位的陰極電極方向運動。由於所述場發射裝置的電子發射體通過所述通孔暴露，故，該電子發射體很容易受到該離子的轟擊，從而導致電子發射體損壞。 However, electrons emitted by the electron emitter collide with free gas molecules in the vacuum, thereby ionizing the gas molecules to generate ions. Moreover, the ions move toward the cathode electrode at a low potential. Since the electron emitter of the field emission device is exposed through the through hole, the electron emitter is easily bombarded by the ions, thereby causing damage to the electron emitter.
有鑒於此，提供一種可以有效避免離子轟擊電子發射體的場發射裝置的製備方法實為必要。 In view of the above, it is necessary to provide a method of fabricating a field emission device that can effectively prevent ion bombardment of an electron emitter.
一種場發射裝置的製備方法，其包括以下步驟：提供一絕緣基底；在絕緣基底的一表面形成一電子引出電極；在電子引出電極的表面形成一二次電子發射層；在絕緣基底表面形成一第一絕緣隔離層，該第一絕緣隔離層具有一第二開口以使得二次電子發射層的表面通過該第二開口暴露；提供一陰極電極板，該陰極電極板具有一第一開口，並在該陰極電極板的部分表面形成一電子發射層；以及將陰極電極板組裝於第一絕緣隔離層相對於絕緣基底的另一表面，使第一開口與第二開口至少部分交疊設置以定義一電子出射部，並使得電子發射層至少部分設置在第一絕緣隔離層的第二開口處並面對電子引出電極設置。 A method for preparing a field emission device, comprising the steps of: providing an insulating substrate; forming an electron extraction electrode on a surface of the insulating substrate; forming a secondary electron emission layer on the surface of the electron extraction electrode; forming a surface on the surface of the insulating substrate a first insulating isolation layer having a second opening such that a surface of the secondary electron emission layer is exposed through the second opening; providing a cathode electrode plate having a first opening, and Forming an electron emission layer on a portion of the surface of the cathode electrode plate; and assembling the cathode electrode plate on the other surface of the first insulation isolation layer relative to the insulation substrate such that the first opening and the second opening are at least partially overlapped to define An electron emitting portion, and the electron emitting layer is at least partially disposed at the second opening of the first insulating spacer and facing the electron extraction electrode.
一種場發射裝置的製備方法，其包括以下步驟：提供一陰極電極板，該陰極電極板具有一第一開口，並在該陰極電極板的部分表面形成一電子發射層；在陰極電極板表面形成一第一絕緣隔離層，該第一絕緣隔離層具有第二開口以使得電子發射層通過該第二開口暴露；提供一絕緣基底；在絕緣基底表面依次形成一電子引出電極和一二次電子發射層；以及將該絕緣基底組裝於第一絕緣隔離層相對於絕緣基底的另一的表面，使第一開口與第二開口至少部分交疊設置以定義一電子出射部，並使得使得電子發射層至少部分設置在第一絕緣 隔離層的第二開口處並面對電子引出電極設置。與先前技術相比，採用本發明的場發射裝置的製備方法製備的場發射裝置，由於電子出射部形成於陰極電極上，電子發射體的電子發射端不會通過電子出射部暴露，所以當電子發射體發射的電子與真空中游離的氣體分子碰撞產生離子向電子引出電極方向運動時，該離子不會轟擊到該電子發射體，從而使該電子發射體具有較長壽命。 A method for preparing a field emission device, comprising the steps of: providing a cathode electrode plate having a first opening, and forming an electron emission layer on a surface of the cathode electrode plate; forming a surface on the cathode electrode plate a first insulating isolation layer having a second opening to expose the electron emission layer through the second opening; providing an insulating substrate; forming an electron extraction electrode and a secondary electron emission sequentially on the surface of the insulating substrate And assembling the insulating substrate to the other surface of the first insulating spacer relative to the insulating substrate, the first opening and the second opening are at least partially overlapped to define an electron emitting portion, and the electron emitting layer is caused At least partially disposed in the first insulation The second opening of the isolation layer is disposed facing the electron extraction electrode. Compared with the prior art, in the field emission device prepared by the preparation method of the field emission device of the present invention, since the electron emission portion is formed on the cathode electrode, the electron emission end of the electron emitter is not exposed through the electron emission portion, so when the electron When the electrons emitted by the emitter collide with free gas molecules in the vacuum to generate ions moving toward the electron extraction electrode, the ions do not bombard the electron emitter, thereby giving the electron emitter a longer life.
100,200,300,400,500‧‧‧場發射裝置 100,200,300,400,500‧‧‧ field emission device
110,210,310,410,510‧‧‧絕緣基底 110,210,310,410,510‧‧‧Insulation base
112,212,312,412,512‧‧‧第一絕緣隔離層 112,212,312,412,512‧‧‧first insulating barrier
1120‧‧‧第二開口 1120‧‧‧ second opening
114,214,314,414,514‧‧‧陰極電極 114,214,314,414,514‧‧‧cathode electrode
1140,2140,4140‧‧‧第一開口 1140, 2140, 4140‧‧‧ first opening
116,216,316,416,516‧‧‧電子發射層 116,216,316,416,516‧‧‧electron emission layer
1162,2162‧‧‧電子發射體 1162, 2162‧‧‧ electron emitters
1164,2164‧‧‧電子發射端 1164, 2164‧‧‧Electronic transmitter
118,218,318,418,518‧‧‧電子引出電極 118,218,318,418,518‧‧‧Electrical extraction electrode
120,220,320,420,520‧‧‧二次電子發射層 120,220,320,420,520‧‧‧second electron emission layer
121,221,321,421,521‧‧‧第二絕緣隔離層 121,221,321,421,521‧‧‧Second insulation isolation layer
1212,3212‧‧‧第三開口 1212, 3212‧‧‧ third opening
122,222,322,422,522‧‧‧柵極電極 122,222,322,422,522‧‧‧ gate electrode
2142‧‧‧第二突起 2142‧‧‧second protrusion
2202‧‧‧第一突起 2202‧‧‧First protrusion
424‧‧‧二次電子倍增極 424‧‧‧Secondary electron doubling pole
4240‧‧‧第四開口 4240‧‧‧fourth opening
4242‧‧‧二次電子發射材料 4242‧‧‧Secondary electron emission materials
426‧‧‧第三絕緣隔離層 426‧‧‧3rd insulation barrier
530‧‧‧陽極電極 530‧‧‧Anode electrode
圖1為本發明第一實施例提供的場發射裝置的結構示意圖。 FIG. 1 is a schematic structural diagram of a field emission device according to a first embodiment of the present invention.
圖2為圖1的場發射裝置沿II-II線剖開後的俯視圖。 Figure 2 is a plan view of the field emission device of Figure 1 taken along line II-II.
圖3為圖1的場發射裝置沿III-III線剖開後的仰視圖。 Figure 3 is a bottom plan view of the field emission device of Figure 1 taken along line III-III.
圖4為本發明第一實施例提供的場發射裝置的製備方法工藝流程圖。 4 is a process flow diagram of a method for fabricating a field emission device according to a first embodiment of the present invention.
圖5為本發明第二實施例提供的場發射裝置的結構示意圖。 FIG. 5 is a schematic structural diagram of a field emission device according to a second embodiment of the present invention.
圖6為本發明第三實施例提供的場發射裝置的結構示意圖。 FIG. 6 is a schematic structural diagram of a field emission device according to a third embodiment of the present invention.
圖7為本發明第四實施例提供的場發射裝置的結構示意圖。 FIG. 7 is a schematic structural diagram of a field emission device according to a fourth embodiment of the present invention.
圖8為本發明第五實施例提供的場發射裝置的結構示意圖。 FIG. 8 is a schematic structural diagram of a field emission device according to a fifth embodiment of the present invention.
以下將結合附圖詳細說明本發明實施例提供的場發射裝置。所述場發射裝置可以包括一個或複數個單元。本發明實施例僅以一個單元為例說明。 The field emission device provided by the embodiment of the present invention will be described in detail below with reference to the accompanying drawings. The field emission device can include one or more cells. The embodiment of the present invention is described by taking only one unit as an example.
請參閱圖1至圖3，本發明第一實施例提供一種場發射裝置100，其包括一絕緣基底110，一第一絕緣隔離層112，一陰極電極114，一電子發射層116，一電子引出電極118，一二次電子發射層120，一第二絕緣隔離層121以及一柵極電極122。 Referring to FIG. 1 to FIG. 3, a first embodiment of the present invention provides a field emission device 100 including an insulating substrate 110, a first insulating isolation layer 112, a cathode electrode 114, an electron emission layer 116, and an electron extraction. The electrode 118, a secondary electron emission layer 120, a second insulating isolation layer 121 and a gate electrode 122.
所述絕緣基底110具有一表面，且所述電子引出電極118設置於該絕緣基底110的表面。所述二次電子發射層120設置於所述電子引出電極118遠離絕緣基底110的表面。所述陰極電極114通過一第一絕緣隔離層112與該電子引出電極118間隔設置，且所述電子引出電極118設置於陰極電極114與絕緣基底110之間。所述陰極電極114定義一第一開口1140作為電子出射部。所述陰極電極114的第一開口1140與所述電子引出電極118面對設置，即電子出射部與所述電子引出電極118相對設置。所述陰極電極114具有一表面，且該表面的至少部分與該電子引出電極118面對設置。所述電子發射層116設置於陰極電極114與該電子引出電極118面對設置的部分表面。優選地，所述電子發射層116設置於陰極電極114表面靠近電子出射部的位置。所述柵極電極122通過所述第二絕緣隔離層121與所述陰極電極114間隔設置。所述電子發射層116發射的電子轟擊所述二次電子發射層120產生二次電子。所述二次電子發射層120發射的二次電子在柵極電極122作用下通過電子出射部射出。 The insulating substrate 110 has a surface, and the electron extraction electrode 118 is disposed on a surface of the insulating substrate 110. The secondary electron emission layer 120 is disposed on a surface of the electron extraction electrode 118 away from the insulation substrate 110. The cathode electrode 114 is spaced apart from the electron extraction electrode 118 by a first insulating isolation layer 112, and the electron extraction electrode 118 is disposed between the cathode electrode 114 and the insulating substrate 110. The cathode electrode 114 defines a first opening 1140 as an electron emitting portion. The first opening 1140 of the cathode electrode 114 is disposed opposite to the electron extraction electrode 118, that is, the electron emission portion is disposed opposite to the electron extraction electrode 118. The cathode electrode 114 has a surface, and at least a portion of the surface faces the electron extraction electrode 118. The electron emission layer 116 is disposed on a surface of the cathode electrode 114 facing the electron extraction electrode 118. Preferably, the electron emission layer 116 is disposed at a position where the surface of the cathode electrode 114 is close to the electron emission portion. The gate electrode 122 is spaced apart from the cathode electrode 114 by the second insulating isolation layer 121. Electrons emitted from the electron emission layer 116 bombard the secondary electron emission layer 120 to generate secondary electrons. The secondary electrons emitted from the secondary electron emission layer 120 are emitted through the electron emission portion by the gate electrode 122.
所述絕緣基底110的材料可以為矽、玻璃、陶瓷、塑膠或聚 合物。所述絕緣基底110的形狀與厚度不限，可以根據實際需要選擇。優選地，所述絕緣基底110的形狀為圓形、正方形或矩形。本實施例中，所述絕緣基底110為一邊長為10毫米，厚度為1毫米的正方形玻璃板。 The material of the insulating substrate 110 may be tantalum, glass, ceramic, plastic or poly Compound. The shape and thickness of the insulating substrate 110 are not limited, and may be selected according to actual needs. Preferably, the insulating substrate 110 has a shape of a circle, a square or a rectangle. In this embodiment, the insulating substrate 110 is a square glass plate having a length of 10 mm and a thickness of 1 mm.
所述電子引出電極118為一導電層，且其厚度和大小可以根據實際需要選擇。所述電子引出電極118的材料可以為純金屬、合金、氧化銦錫或導電漿料等。可以理解，當絕緣基底110為矽片時，該電子引出電極118可以為一矽摻雜層。本實施例中，所述電子引出電極118為一厚度為20微米的圓形鋁膜。該鋁膜通過磁控濺射法沈積於絕緣基底110表面。 The electron extraction electrode 118 is a conductive layer, and its thickness and size can be selected according to actual needs. The material of the electron extraction electrode 118 may be a pure metal, an alloy, an indium tin oxide or a conductive paste or the like. It can be understood that when the insulating substrate 110 is a cymbal, the electron extraction electrode 118 can be an erbium doped layer. In this embodiment, the electron extraction electrode 118 is a circular aluminum film having a thickness of 20 micrometers. The aluminum film is deposited on the surface of the insulating substrate 110 by magnetron sputtering.
所述二次電子發射層120的材料包括氧化鎂(MgO)、氧化鈹(BeO)、氟化鎂(MgF2)、氟化鈹(BeF2)、氧化銫(CsO)以及氧化鋇(BaO)中的一種或幾種，其厚度和大小可以根據實際需要選擇。所述二次電子發射層120可以通過塗敷、電子束蒸發、熱蒸發或磁控濺射等方法形成於電子引出電極118的表面。可以理解，所述二次電子發射層120的表面還可以形成有凹凸結構以增加二次電子發射層120的面積，可提高二次電子發射效率。本實施例中，所述二次電子發射層120為一厚度為20微米的圓形氧化鋇層。 The material of the secondary electron emission layer 120 includes magnesium oxide (MgO), beryllium oxide (BeO), magnesium fluoride (MgF 2 ), beryllium fluoride (BeF 2 ), antimony oxide (CsO), and barium oxide (BaO). One or several of them, the thickness and size can be selected according to actual needs. The secondary electron emission layer 120 may be formed on the surface of the electron extraction electrode 118 by a method such as coating, electron beam evaporation, thermal evaporation, or magnetron sputtering. It can be understood that the surface of the secondary electron emission layer 120 may also be formed with a concavo-convex structure to increase the area of the secondary electron emission layer 120, and the secondary electron emission efficiency may be improved. In this embodiment, the secondary electron emission layer 120 is a circular yttrium oxide layer having a thickness of 20 micrometers.
所述陰極電極114可以為一導電層或導電基板，其材料可以為金屬、合金、氧化銦錫(ITO)或導電漿料等。所述陰極電極114的厚度和大小可以根據實際需要選擇。所述陰極電極114的至少部分表面與所述二次電子發射層120面對設置。 所述陰極電極114具有一第一開口1140作為電子出射部。具體地，所述陰極電極114可以為一具有通孔的層狀結構或複數個相隔一定距離設置的條狀結構。所述第一開口1140可以為所述陰極電極114的通孔或相隔一定距離設置的條狀結構之間的間隔。本實施例中，所述陰極電極114為一圓環形鋁導電層，且其中心具有一通孔作為電子出射部。 The cathode electrode 114 may be a conductive layer or a conductive substrate, and the material thereof may be metal, alloy, indium tin oxide (ITO) or conductive paste. The thickness and size of the cathode electrode 114 can be selected according to actual needs. At least a portion of the surface of the cathode electrode 114 is disposed to face the secondary electron emission layer 120. The cathode electrode 114 has a first opening 1140 as an electron emitting portion. Specifically, the cathode electrode 114 may be a layered structure having through holes or a plurality of strip structures disposed at a distance. The first opening 1140 may be a via between the cathode electrode 114 or a strip structure disposed at a distance. In this embodiment, the cathode electrode 114 is a circular aluminum conductive layer, and has a through hole at the center thereof as an electron emitting portion.
所述第一絕緣隔離層112設置於所述陰極電極與電子引出電極之間，用於使所述陰極電極與電子引出電極之間絕緣。所述第一絕緣隔離層112的材料可以為樹脂、厚膜曝光膠、玻璃、陶瓷、氧化物及其混合物等。所述氧化物包括二氧化矽、三氧化二鋁、氧化鉍等，其厚度和形狀可以根據實際需要選擇。所述第一絕緣隔離層112可以直接設置於絕緣基底110表面，也可設置於電子引出電極118表面。所述第一絕緣隔離層112具有一第二開口1120。具體地，所述第一絕緣隔離層112可以為一具有通孔的層狀結構，所述通孔為第二開口1120，暴露出二次電子發射層120。所述第一絕緣隔離層112也可為複數個相隔一定距離設置的條狀結構，且所述相隔一定距離設置的條狀結構之間的間隔為第二開口1120。所述陰極電極114的至少部分對應設置於所述第一絕緣隔離層112的第二開口1120處，並通過該第一絕緣隔離層112的第二開口1120暴露出部分表面面對所述二次電子發射層120設置。所述陰極電極114的第一開口1140與所述第一絕緣隔離層的第二開口1120至少部分交疊設置。所述第一開口1140與所述第 二開口1120交疊的部分作為電子出射部。優選地，所述第一開口1140完全設置在第二開口1120範圍內，所述第一開口1140作為電子出射部。本實施例中，所述第一絕緣隔離層112為一厚度為100微米的圓環形SU-8光刻膠設置於玻璃板表面，且其定義有一圓形通孔，所述陰極電極114的部分表面通過該圓形通孔與二次電子發射層120面對設置，所述陰極電極114的通孔設置在第一絕緣隔離層112的圓形通孔的範圍內，作為電子出射部。 The first insulating isolation layer 112 is disposed between the cathode electrode and the electron extraction electrode for insulating the cathode electrode and the electron extraction electrode. The material of the first insulating isolation layer 112 may be a resin, a thick film exposure adhesive, glass, ceramic, oxide, a mixture thereof or the like. The oxide includes cerium oxide, aluminum oxide, cerium oxide, etc., and its thickness and shape can be selected according to actual needs. The first insulating isolation layer 112 may be disposed directly on the surface of the insulating substrate 110 or on the surface of the electron extraction electrode 118. The first insulating isolation layer 112 has a second opening 1120. Specifically, the first insulating isolation layer 112 may be a layered structure having a through hole, and the through hole is a second opening 1120 exposing the secondary electron emission layer 120. The first insulating isolation layer 112 may also be a plurality of strip structures disposed at a certain distance, and the interval between the strip structures disposed at a certain distance is the second opening 1120. At least a portion of the cathode electrode 114 is disposed at the second opening 1120 of the first insulating isolation layer 112, and a second surface 1120 of the first insulating isolation layer 112 exposes a portion of the surface facing the second The electron emission layer 120 is disposed. The first opening 1140 of the cathode electrode 114 and the second opening 1120 of the first insulating isolation layer are at least partially overlapped. The first opening 1140 and the first The portion where the two openings 1120 overlap is used as an electron emitting portion. Preferably, the first opening 1140 is completely disposed within the second opening 1120, and the first opening 1140 serves as an electron emitting portion. In this embodiment, the first insulating isolation layer 112 is a circular SU-8 photoresist with a thickness of 100 micrometers disposed on the surface of the glass plate, and defines a circular through hole, and the cathode electrode 114 A part of the surface is disposed facing the secondary electron emission layer 120 through the circular through hole, and the through hole of the cathode electrode 114 is disposed in a range of a circular through hole of the first insulating isolation layer 112 as an electron emission portion.
所述柵極電極122可以為金屬柵網、金屬片、氧化銦錫薄膜或導電漿料層等。所述柵極電極122設置於第二絕緣隔離層121與陰極電極114相對的另一表面，即第二絕緣隔離層121設置於柵極電極122與陰極電極114之間。具體地，所述柵極電極122可設置於第二絕緣隔離層121的上表面靠近電子出射部的位置。當所述柵極電極122為柵網時，可覆蓋所述電子出射部設置。所述柵極電極122可以通過絲網列印、電鍍、化學氣相沈積、磁控濺射、熱沈積等方法製備，也可以將提前製備好的金屬柵網直接設置於第二絕緣隔離層121上。本實施例中，所述柵極電極122為金屬柵網，且該柵極電極122從第二絕緣隔離層121的表面延伸至電子出射部上方，且該金屬柵網覆蓋所述電子出射部。可以理解，所述金屬柵網上還可以塗敷二次電子發射材料，以進一步增強場發射裝置100的場發射電流密度。 The gate electrode 122 may be a metal grid, a metal piece, an indium tin oxide film or a conductive paste layer or the like. The gate electrode 122 is disposed on the other surface of the second insulating isolation layer 121 opposite to the cathode electrode 114 , that is, the second insulating isolation layer 121 is disposed between the gate electrode 122 and the cathode electrode 114 . Specifically, the gate electrode 122 may be disposed at a position where an upper surface of the second insulating isolation layer 121 is close to the electron emission portion. When the gate electrode 122 is a grid, the electron exit portion may be covered. The gate electrode 122 may be prepared by screen printing, electroplating, chemical vapor deposition, magnetron sputtering, thermal deposition, or the like, or the metal grid prepared in advance may be directly disposed on the second insulating isolation layer 121. on. In this embodiment, the gate electrode 122 is a metal grid, and the gate electrode 122 extends from a surface of the second insulating isolation layer 121 to above the electron emission portion, and the metal grid covers the electron emission portion. It will be appreciated that the metal grid may also be coated with a secondary electron emissive material to further enhance the field emission current density of the field emission device 100.
所述第二絕緣隔離層121的材料和形成方法與第一絕緣隔離 層112的材料和形成方法相同。所述第二絕緣隔離層121的作用為使陰極電極114與柵極電極絕緣。所述陰極電極114設置於第二絕緣隔離層121靠近電子引出電極118的表面。所述第二絕緣隔離層121為一層狀結構，其形狀和大小與陰極電極114相對應。所述第二絕緣隔離層121具有一與電子出射部對應的第三開口1212。所述第三開口1212與第一開口1140及第二開口1120至少部分交疊設置，所述第三開口1212與第一開口1140及所述第二開口1120交疊的部分作為電子出射部。本實施例中，所述第二絕緣隔離層121具有一與電子出射部相對應的通孔。所述第二絕緣隔離層121在第三開口1212的內壁上可以進一步設置有二次電子發射材料。即，所述第二絕緣隔離層121靠近電子出射部的表面可以設置二次電子發射材料。此時，所述第二絕緣隔離層121的厚度可以做的較大，如500微米~1000微米，以提高二次電子發射材料的面積。進一步，所述第二絕緣隔離層121在第三開口1212的內壁上可以形成複數個凹凸結構，以增加二次電子發射材料的面積。 The material and formation method of the second insulating isolation layer 121 are isolated from the first insulation The material and formation method of layer 112 is the same. The second insulating isolation layer 121 functions to insulate the cathode electrode 114 from the gate electrode. The cathode electrode 114 is disposed on a surface of the second insulating isolation layer 121 near the electron extraction electrode 118. The second insulating isolation layer 121 is a layered structure having a shape and size corresponding to the cathode electrode 114. The second insulating isolation layer 121 has a third opening 1212 corresponding to the electron emission portion. The third opening 1212 is at least partially overlapped with the first opening 1140 and the second opening 1120 , and a portion of the third opening 1212 overlapping the first opening 1140 and the second opening 1120 serves as an electron emitting portion. In this embodiment, the second insulating isolation layer 121 has a through hole corresponding to the electron emission portion. The second insulating isolation layer 121 may further be provided with a secondary electron emission material on the inner wall of the third opening 1212. That is, the second insulating spacer 121 may be provided with a secondary electron emitting material near the surface of the electron emitting portion. At this time, the thickness of the second insulating isolation layer 121 may be made larger, such as 500 micrometers to 1000 micrometers, to increase the area of the secondary electron emission material. Further, the second insulating isolation layer 121 may form a plurality of concave and convex structures on the inner wall of the third opening 1212 to increase the area of the secondary electron emission material.
所述電子發射層116設置於陰極電極114面對二次電子發射層120的部分表面，所述電子發射層116面對所述二次電子發射層120設置。優選地，所述電子發射層116設置於陰極電極114的表面靠近電子出射部的位置。所述電子發射層116包括複數個電子發射體1162，如奈米碳管、奈米碳纖維、或矽奈米線等。所述每個電子發射體1162具有一電子發射端1164， 且該電子發射端1164指向所述二次電子發射層120設置。所述電子發射層116的厚度和大小可以根據實際需要選擇。進一步，所述電子發射層116的表面開可以設置一層抗離子轟擊材料以提高其穩定性和壽命。所述抗離子轟擊材料包括碳化鋯、碳化鉿、六硼化鑭等中的一種或複數種。本實施例中，所述電子發射層116為一環形奈米碳管漿料層。所述奈米碳管漿料包括奈米碳管、低熔點玻璃粉以及有機載體。其中，有機載體在烘烤過程中蒸發，低熔點玻璃粉在烘烤過程中熔化並將奈米碳管固定於陰極電極114表面。所述環形電子發射層116的外徑小於或等於二次電子發射層120的半徑，且內徑等於電子出射部的半徑。 The electron emission layer 116 is disposed on a portion of the surface of the cathode electrode 114 facing the secondary electron emission layer 120, and the electron emission layer 116 is disposed facing the secondary electron emission layer 120. Preferably, the electron emission layer 116 is disposed at a position where the surface of the cathode electrode 114 is close to the electron emission portion. The electron emission layer 116 includes a plurality of electron emitters 1162, such as a carbon nanotube, a carbon fiber, or a nanowire. Each of the electron emitters 1162 has an electron emitting end 1164. And the electron emission end 1164 is disposed to the secondary electron emission layer 120. The thickness and size of the electron emission layer 116 can be selected according to actual needs. Further, the surface of the electron emission layer 116 may be provided with an anti-ion bombardment material to improve its stability and life. The anti-ion bombardment material includes one or more of zirconium carbide, tantalum carbide, lanthanum hexaboride, and the like. In this embodiment, the electron emission layer 116 is a circular carbon nanotube slurry layer. The carbon nanotube slurry includes a carbon nanotube, a low melting glass powder, and an organic vehicle. Wherein, the organic carrier evaporates during the baking process, the low-melting glass frit melts during the baking process, and the carbon nanotubes are fixed to the surface of the cathode electrode 114. The outer diameter of the annular electron emission layer 116 is less than or equal to the radius of the secondary electron emission layer 120, and the inner diameter is equal to the radius of the electron emission portion.
所述電子發射層116的電子發射體1162的電子發射端1164與二次電子發射層120相對於電子發射端1164的表面的距離小於電子與氣體分子的平均自由程，以減少離子對電子發射體1162的轟擊。一方面，由於電子發射端1164與二次電子發射層120相對於電子發射端1164的表面的距離小於電子與氣體分子的平均自由程，故，電子發射體1162發射的電子在與氣體分子(指電子發射端1164與二次電子發射層120之間的氣體分子)碰撞之前會先轟擊二次電子發射層120，從而提高的電子發射體1162發射的電子轟擊二次電子發射層120幾率。另一方面，由於電子發射體1162發射的電子與氣體分子碰撞的幾率減小，即氣體分子被電離的產生離子的幾率也減小，故，電子發射端1164與二次電子發射層120之間產生離子 的幾率也減小，從而使電子發射端1164被離子正面轟擊的幾率減小。 The distance between the electron-emitting end 1164 of the electron-emitting body 1162 of the electron-emitting layer 116 and the surface of the secondary electron-emitting layer 120 with respect to the surface of the electron-emitting end 1164 is smaller than the mean free path of electrons and gas molecules to reduce the ion-pair electron emitter 1162 bombardment. In one aspect, since the distance between the electron-emitting end 1164 and the surface of the secondary electron-emitting layer 120 relative to the surface of the electron-emitting end 1164 is smaller than the mean free path of the electrons and the gas molecules, the electrons emitted by the electron-emitting body 1162 are in contact with the gas molecules (referring to The secondary electron-emitting layer 120 is bombarded before the collision of the electron-emitting end 1164 with the gas molecules between the secondary electron-emitting layers 120, so that the electrons emitted from the electron-emitting body 1162 increase the probability of bombarding the secondary electron-emitting layer 120. On the other hand, since the probability of electrons emitted from the electron emitter 1162 colliding with the gas molecules is reduced, that is, the probability that the gas molecules are ionized to generate ions is also reduced, between the electron emission end 1164 and the secondary electron emission layer 120. Generating ions The probability is also reduced, thereby reducing the probability that the electron-emitting end 1164 is bombarded by the front side of the ion.
根據氣體分子運動論，在一定壓強下，氣體分子之間的平均自由程以及自由電子與氣體分子之間的平均自由程分別由公式(1)和(2)所示，
其中，k=1.38×10-23J/K為波爾茲曼常數；T為絕對溫度；d為氣體分子的有效直徑；P為氣體壓強。以溫度為300K的氮氣為例，在氣體壓強為1Torr的真空度下，空氣分子的平均自由程約為50微米，而自由電子與氣體分子的平均自由程為283微米。故，如果所述電子發射端1164與二次電子發射層120表面的距離足夠小的情況下，所述場發射裝置100就可以在低真空狀態工作而不會引起電子發射體1162的損壞。 Where k = 1.38 × 10 -23 J / K is the Boltzmann constant; T is the absolute temperature; d is the effective diameter of the gas molecule; P is the gas pressure. Taking a nitrogen gas having a temperature of 300 K as an example, the average free path of air molecules is about 50 μm at a gas pressure of 1 Torr, and the mean free path of free electrons and gas molecules is 283 μm. Therefore, if the distance between the electron-emitting end 1164 and the surface of the secondary electron-emitting layer 120 is sufficiently small, the field emission device 100 can operate in a low vacuum state without causing damage to the electron emitter 1162.
本實施例中，所述電子發射端1164與二次電子發射層120相對於電子發射端1164的表面的距離為10微米~30微米。相應地，所述場發射裝置100可以在壓強高至9Torr~27Torr的低真空的條件下工作也不至於導致發射體的損壞。在更好的真空如壓強降低1個量級至1Torr左右下工作，電子在發射間隙 與氣體分子的碰撞就可以忽略至不計，因而發射體由於離子轟擊造成的破壞也就可以忽略不計。可以理解，所述場發射裝置100也可以在高真空環境或惰性氣體環境中工作，會有更穩定的性能。 In this embodiment, the distance between the electron emission end 1164 and the secondary electron emission layer 120 with respect to the surface of the electron emission end 1164 is 10 micrometers to 30 micrometers. Accordingly, the field emission device 100 can operate under a low vacuum condition of a pressure of up to 9 Torr to 27 Torr without causing damage to the emitter. Work in a better vacuum, such as a pressure drop of 1 order to 1 Torr, electrons in the emission gap Collisions with gas molecules can be neglected, so the damage caused by the ion bombardment of the emitter is negligible. It can be understood that the field emission device 100 can also operate in a high vacuum environment or an inert gas environment, and has more stable performance.
具體地，本實施例所述場發射裝置100的具體結構如下。所述第一絕緣隔離層112設置於所述絕緣基底110的一表面，且該第一絕緣隔離層112定義一第二開口1120以使絕緣基底110的表面通過該第二開口1120暴露。所述電子引出電極118設置於所述絕緣基底110通過該第二開口1120暴露的表面，且所述電子引出電極118的厚度小於第一絕緣隔離層112的厚度。所述二次電子發射層120設置於所述電子引出電極118的表面，且與電子引出電極118電連接。所述陰極電極114設置於所述第一絕緣隔離層112的表面，且延伸至所述二次電子發射層120的上方。所述陰極電極114定義一第一開口1140作為電子出射部。所述電子發射層116設置於所述陰極電極114面向二次電子發射層120的表面，且與陰極電極114電連接。所述電子發射層116與二次電子發射層120相對且間隔設置。所述第二絕緣隔離層121設置於所述陰極電極114遠離二次電子發射層120的表面，且該第二絕緣隔離層121的第三開口1212與電子出射部對應設置。所述柵極電極122設置於第二絕緣隔離層121的表面，且從第二絕緣隔離層121的表面延伸至電子出射部的上方以將電子出射部覆蓋。 Specifically, the specific structure of the field emission device 100 of this embodiment is as follows. The first insulating isolation layer 112 is disposed on a surface of the insulating substrate 110 , and the first insulating isolation layer 112 defines a second opening 1120 to expose a surface of the insulating substrate 110 through the second opening 1120 . The electron extraction electrode 118 is disposed on a surface of the insulating substrate 110 exposed through the second opening 1120 , and the thickness of the electron extraction electrode 118 is smaller than the thickness of the first insulating isolation layer 112 . The secondary electron emission layer 120 is disposed on a surface of the electron extraction electrode 118 and electrically connected to the electron extraction electrode 118. The cathode electrode 114 is disposed on a surface of the first insulating isolation layer 112 and extends above the secondary electron emission layer 120. The cathode electrode 114 defines a first opening 1140 as an electron emitting portion. The electron emission layer 116 is disposed on a surface of the cathode electrode 114 facing the secondary electron emission layer 120 and is electrically connected to the cathode electrode 114. The electron emission layer 116 is opposed to and spaced apart from the secondary electron emission layer 120. The second insulating isolation layer 121 is disposed on a surface of the cathode electrode 114 away from the secondary electron emission layer 120, and the third opening 1212 of the second insulating isolation layer 121 is disposed corresponding to the electron emission portion. The gate electrode 122 is disposed on a surface of the second insulating isolation layer 121 and extends from a surface of the second insulating isolation layer 121 to above the electron emission portion to cover the electron emission portion.
所述場發射裝置100工作時，電子引出電極118的電位高於陰 極電極114的電位，柵極電極122的電位高於電子引出電極118的電位。本實施例中，所述陰極電極114保持零電位，電子引出電極118上施加一100伏特的電壓，柵極電極122上施加一500伏特的電壓。所述電子發射體1162在電子引出電極118電壓作用下發射電子，且該電子轟擊二次電子發射層120以使二次電子發射層120發射二次電子。所述二次電子發射層120發射的二次電子在柵極電極122電壓作用下從電子出射部射出。 When the field emission device 100 is in operation, the potential of the electron extraction electrode 118 is higher than that of the cathode. The potential of the electrode electrode 114 and the potential of the gate electrode 122 are higher than the potential of the electron extraction electrode 118. In this embodiment, the cathode electrode 114 is maintained at a zero potential, a voltage of 100 volts is applied to the electron extraction electrode 118, and a voltage of 500 volts is applied to the gate electrode 122. The electron emitter 1162 emits electrons under the action of the voltage of the electron extraction electrode 118, and the electrons bombard the secondary electron emission layer 120 to cause the secondary electron emission layer 120 to emit secondary electrons. The secondary electrons emitted from the secondary electron emission layer 120 are emitted from the electron emission portion by the voltage of the gate electrode 122.
所述場發射裝置100具有以下優點：由於電子出射部形成於陰極電極114上，電子發射體1162的電子發射端1164不會通過電子出射部暴露，故，當電子發射體1162發射的電子與真空中游離的氣體分子碰撞產生離子向電子引出電極118方向運動時，該離子不會轟擊到該電子發射體1162，從而使該電子發射體1162具有較長壽命。由於電子發射層116上形成抗離子轟擊材料可以提高其穩定性和壽命。同時，由於採用了二次電子發射層120，可以在較低的發射電壓情況下得到較大的發射電流。 The field emission device 100 has the advantage that since the electron emission portion is formed on the cathode electrode 114, the electron emission end 1164 of the electron emitter 1162 is not exposed through the electron emission portion, so that the electron emission and the vacuum emitted by the electron emitter 1162 When the free gas molecules collide to generate ions to move toward the electron extraction electrode 118, the ions do not bombard the electron emitter 1162, so that the electron emitter 1162 has a longer lifetime. The formation of an ion-resistant bombardment material on the electron-emitting layer 116 can improve its stability and lifetime. At the same time, since the secondary electron emission layer 120 is employed, a large emission current can be obtained at a lower emission voltage.
請參閱圖4，本發明第一實施例提供一種場發射裝置100的製備方法，其包括以下步驟： Referring to FIG. 4, a first embodiment of the present invention provides a method for fabricating a field emission device 100, which includes the following steps:
步驟一，提供一絕緣基底110。 In step one, an insulating substrate 110 is provided.
本實施例中，所述絕緣基底110為一方形玻璃板。 In this embodiment, the insulating substrate 110 is a square glass plate.
步驟二，在絕緣基底110的一表面形成一電子引出電極118。 In step two, an electron extraction electrode 118 is formed on one surface of the insulating substrate 110.
所述電子引出電極118可以通過絲網列印、電鍍、化學氣相沈積、磁控濺射或熱沈積等方法製備。本實施例中，通過磁控濺射法在絕緣基底110表面沈積一鋁層作為電子引出電極118。 The electron extraction electrode 118 can be prepared by screen printing, electroplating, chemical vapor deposition, magnetron sputtering or thermal deposition. In the present embodiment, an aluminum layer is deposited as an electron extraction electrode 118 on the surface of the insulating substrate 110 by magnetron sputtering.
步驟三，在電子引出電極118的表面形成一二次電子發射層120。 In step three, a secondary electron emission layer 120 is formed on the surface of the electron extraction electrode 118.
所述二次電子發射層120可以通過絲網列印、電鍍、化學氣相沈積、磁控濺射或熱沈積等方法製備。本實施例中，通過表面塗覆在電子引出電極118表面形成一層氧化鋇作為二次電子發射層120。 The secondary electron emission layer 120 may be prepared by screen printing, electroplating, chemical vapor deposition, magnetron sputtering, or thermal deposition. In the present embodiment, a layer of ruthenium oxide is formed as a secondary electron emission layer 120 on the surface of the electron extraction electrode 118 by surface coating.
步驟四，在絕緣基底110表面形成一第一絕緣隔離層112，該第一絕緣隔離層112具有一第二開口1120以使得二次電子發射層120的表面通過該第二開口1120暴露。 Step 4, forming a first insulating isolation layer 112 on the surface of the insulating substrate 110, the first insulating isolation layer 112 having a second opening 1120 such that the surface of the secondary electron emission layer 120 is exposed through the second opening 1120.
所述第一絕緣隔離層112可以通過絲網列印、甩膠、塗敷或厚膜工藝等方法製備。本實施例中，通過絲網列印法在陰極電極114表面直接形成一具有圓形通孔的第一絕緣隔離層112，從而使得二次電子發射層120的表面通過該圓形通孔暴露。 The first insulating isolation layer 112 can be prepared by a method such as screen printing, silicone coating, coating or thick film process. In the present embodiment, a first insulating spacer layer 112 having a circular via hole is directly formed on the surface of the cathode electrode 114 by a screen printing method, so that the surface of the secondary electron emission layer 120 is exposed through the circular via hole.
步驟五，提供一陰極電極板(圖未標)，該陰極電極板具有一第一開口1140，並在該陰極電極板的部分表面形成一電子發射層116。 In step five, a cathode electrode plate (not shown) is provided. The cathode electrode plate has a first opening 1140, and an electron emission layer 116 is formed on a portion of the surface of the cathode electrode plate.
所述陰極電極板可以為一導電基板或形成有導電層的絕緣基 板。 The cathode electrode plate may be a conductive substrate or an insulating layer formed with a conductive layer board.
本實施例中，所述陰極電極板的製備方法包括以下步驟： In this embodiment, the method for preparing the cathode electrode plate comprises the following steps:
首先，提供一第二絕緣隔離層121。 First, a second insulating isolation layer 121 is provided.
所述第二絕緣隔離層121可以為具有通孔的基板或條狀體。本實施例中，所述第二絕緣隔離層121為一圓環形玻璃板，且所述第二絕緣隔離層121具有一第三開口1212。 The second insulating isolation layer 121 may be a substrate or a strip having a through hole. In this embodiment, the second insulating isolation layer 121 is a circular glass plate, and the second insulating isolation layer 121 has a third opening 1212.
然後，在所述第二絕緣隔離層121的表面靠近第三開口1212的位置形成一陰極電極114。 Then, a cathode electrode 114 is formed at a position where the surface of the second insulating isolation layer 121 is close to the third opening 1212.
所述陰極電極114可以通過絲網列印，真空鍍膜等方法製備，也可以將一金屬片直接設置於第二絕緣隔離層121表面。本實施例中，通過磁控濺射法在第二絕緣隔離層121的表面沈積一圓環形鋁層作為陰極電極114，且所述陰極電極114形成有與第三開口1212對應的第一開口1140，作為電子出射部。 The cathode electrode 114 may be prepared by screen printing, vacuum coating or the like, or a metal piece may be directly disposed on the surface of the second insulating isolation layer 121. In this embodiment, a circular aluminum layer is deposited as a cathode electrode 114 on the surface of the second insulating isolation layer 121 by magnetron sputtering, and the cathode electrode 114 is formed with a first opening corresponding to the third opening 1212. 1140, as an electron emission unit.
所述電子發射層116可以通過列印漿料或化學氣相沈積法等方法製備。本實施例中，先通過絲網列印在陰極電極114表面形成一環形奈米碳管漿料層，再對該奈米碳管漿料層進行烘烤。所述奈米碳管漿料包括奈米碳管、低熔點玻璃粉以及有機載體。其中，有機載體在烘烤過程中蒸發，低熔點玻璃粉在烘烤過程中熔化並將奈米碳管固定於陰極電極114表面。進一步，還可以採用膠帶黏結剝離等方式對奈米碳管電子發射層116進行表面處理，以使得更多的奈米碳管暴露。可 以理解，採用膠帶黏結剝離奈米碳管電子發射層116可以使得奈米碳管暴露的同時豎立以與二次電子發射層120表面垂直。 The electron emission layer 116 can be prepared by a method such as printing paste or chemical vapor deposition. In this embodiment, a ring of carbon nanotube slurry is formed on the surface of the cathode electrode 114 by screen printing, and the layer of the carbon nanotube slurry is baked. The carbon nanotube slurry includes a carbon nanotube, a low melting glass powder, and an organic vehicle. Wherein, the organic carrier evaporates during the baking process, the low-melting glass frit melts during the baking process, and the carbon nanotubes are fixed to the surface of the cathode electrode 114. Further, the carbon nanotube electron-emitting layer 116 may be surface-treated by tape bonding or the like to expose more carbon nanotubes. can It is understood that the stripping of the carbon nanotube electron-emitting layer 116 by tape bonding allows the carbon nanotube to be erected while being exposed to be perpendicular to the surface of the secondary electron-emitting layer 120.
進一步，可在此電子發射層116上形成抗離子轟擊材料如碳化鋯，碳化鉿，六硼化鑭等，以提高其穩定性和壽命。本實施例中，採用磁控濺射的方法在奈米碳管表面形成一碳化鉿的薄膜。 Further, an ion bombarding material such as zirconium carbide, tantalum carbide, lanthanum hexaboride or the like may be formed on the electron emission layer 116 to improve stability and life. In this embodiment, a film of tantalum carbide is formed on the surface of the carbon nanotube by magnetron sputtering.
步驟六，將陰極電極板組裝於第一絕緣隔離層112相對於絕緣基底110的另一表面，使第一開口1140與第二開口1120至少部分交疊設置以定義一電子出射部，並使得電子發射層116至少部分設置在第一絕緣隔離層112的第二開口1120處並面對電子引出電極118設置。 Step 6: assembling the cathode electrode plate to the other surface of the first insulating isolation layer 112 relative to the insulating substrate 110, so that the first opening 1140 and the second opening 1120 are at least partially overlapped to define an electron emitting portion and make the electron The emissive layer 116 is at least partially disposed at the second opening 1120 of the first insulating isolation layer 112 and disposed facing the electron extraction electrode 118.
將陰極電極114的第一開口1140對應於第一絕緣隔離層112的第二開口1120設置，並使得第一開口1140與第二開口1120至少部分重疊以定義一電子出射部。 The first opening 1140 of the cathode electrode 114 is disposed corresponding to the second opening 1120 of the first insulating isolation layer 112, and the first opening 1140 and the second opening 1120 are at least partially overlapped to define an electron emitting portion.
本實施例中，將所述圓環形陰極電極板直接設置於第一絕緣隔離層112的表面，使得第一開口1140完全設置在第二開口1120的範圍內，並使得電子發射層116至少部分面對電子引出電極118設置。可以理解，當陰極電極板為條狀體時，可以將至少兩個陰極電極板平行間隔設置於第一絕緣隔離層112的表面。間隔設置的陰極電極板之間定義一第一開口1140以作為電子出射部。 In this embodiment, the annular cathode electrode plate is directly disposed on the surface of the first insulating isolation layer 112 such that the first opening 1140 is completely disposed within the range of the second opening 1120, and the electron emission layer 116 is at least partially Facing the electronic extraction electrode 118 setting. It can be understood that when the cathode electrode plate is a strip body, at least two cathode electrode plates may be disposed in parallel on the surface of the first insulating isolation layer 112. A first opening 1140 is defined between the spaced apart cathode electrode plates as an electron emitting portion.
步驟七，在第二絕緣隔離層121遠離電子引出電極118的表面設置一柵極電極122。 In step seven, a gate electrode 122 is disposed on a surface of the second insulating isolation layer 121 away from the electron extraction electrode 118.
所述柵極電極122可以通過絲網列印、電鍍，化學氣相沈積、磁控濺射、熱沈積等方法製備，也可以將提前製備好的金屬柵網直接設置於第二絕緣隔離層121上。本實施例中，將一金屬柵網直接設置並固定於第二絕緣隔離層121表面。可以理解，該步驟為可選步驟。 The gate electrode 122 can be prepared by screen printing, electroplating, chemical vapor deposition, magnetron sputtering, thermal deposition, etc., or the metal grid prepared in advance can be directly disposed on the second insulating isolation layer 121. on. In this embodiment, a metal grid is directly disposed and fixed on the surface of the second insulating isolation layer 121. It can be understood that this step is an optional step.
可以理解，上述場發射裝置100的製備方法的步驟不限於上述順序，本領域技術人員可以根據實際需要進行調整。例如，上述場發射裝置100的製備方法可以包括以下步驟： It can be understood that the steps of the method for preparing the field emission device 100 are not limited to the above sequence, and those skilled in the art can adjust according to actual needs. For example, the method for preparing the field emission device 100 described above may include the following steps:
步驟一，提供一陰極電極板，該陰極電極板具有一第一開口1140，並在該陰極電極板的部分表面形成一電子發射層116。 In the first step, a cathode electrode plate is provided. The cathode electrode plate has a first opening 1140, and an electron emission layer 116 is formed on a portion of the surface of the cathode electrode plate.
步驟二，在陰極電極板表面形成一第一絕緣隔離層112，該第一絕緣隔離層112具有第二開口1120以使得電子發射層116通過該第二開口1120暴露。 Step 2, forming a first insulating isolation layer 112 on the surface of the cathode electrode plate, the first insulating isolation layer 112 having a second opening 1120 such that the electron emission layer 116 is exposed through the second opening 1120.
步驟三，提供一絕緣基底110。 In step three, an insulating substrate 110 is provided.
步驟四，在絕緣基底110表面依次形成一電子引出電極118和一二次電子發射層120。 In step four, an electron extraction electrode 118 and a secondary electron emission layer 120 are sequentially formed on the surface of the insulating substrate 110.
步驟五，將該絕緣基底110組裝於第一絕緣隔離層112相對於絕緣基底110的另一的表面，使第一開口1140與第二開口 1120至少部分交疊設置以定義一電子出射部，並使得使得電子發射層116至少部分設置在第一絕緣隔離層112的第二開口1120處並面對電子引出電極118設置。 Step 5, the insulating substrate 110 is assembled on the other surface of the first insulating isolation layer 112 relative to the insulating substrate 110, so that the first opening 1140 and the second opening The 1120 is at least partially overlapped to define an electron exit portion such that the electron emission layer 116 is at least partially disposed at the second opening 1120 of the first insulating isolation layer 112 and disposed facing the electron extraction electrode 118.
請參閱圖5，本發明第二實施例提供一種場發射裝置200，其包括一絕緣基底210，一第一絕緣隔離層212，一陰極電極214，一電子發射層216，一電子引出電極218，一二次電子發射層220，一第二絕緣隔離層221以及一柵極電極222。本發明第二實施例提供的場發射裝置200的結構與本發明第一實施例提供的場發射裝置100的結構基本相同，其區別在於所述二次電子發射層220表面與第一開口2140相對的位置具有至少一第一突起2202，所述陰極電極214與二次電子發射層220相對的表面具有至少一第二突起2142。所述電子發射層216設置於該至少一第二突起2142的表面，且所述電子發射體2162的電子發射端2164指向至少一第一突起2202的表面。 Referring to FIG. 5, a second embodiment of the present invention provides a field emission device 200 including an insulating substrate 210, a first insulating isolation layer 212, a cathode electrode 214, an electron emission layer 216, and an electron extraction electrode 218. A secondary electron emission layer 220, a second insulating isolation layer 221 and a gate electrode 222. The structure of the field emission device 200 provided by the second embodiment of the present invention is substantially the same as that of the field emission device 100 provided by the first embodiment of the present invention, except that the surface of the secondary electron emission layer 220 is opposite to the first opening 2140. The position has at least one first protrusion 2202, and the surface of the cathode electrode 214 opposite to the secondary electron emission layer 220 has at least one second protrusion 2142. The electron emission layer 216 is disposed on a surface of the at least one second protrusion 2142, and the electron emission end 2164 of the electron emitter 2162 is directed to a surface of the at least one first protrusion 2202.
所述第一突起2202和第二突起2142的形狀和大小不限，可以根據實際需要選擇。可以理解，當所述陰極電極214為一具有通孔的層狀結構時，所述第一突起2202可以為一錐形，所述第二突起2142為一圍繞第一突起2202的環形突起；當所述陰極電極214為複數個間隔設置的條狀結構時，所述第一突起2202與第二突起2142可以為一沿著條狀結構延伸的棱錐體。本實施例中，所述第一突起2202為一指向第一開口2140的圓錐體。所述第二突起2142與第一突起2202相對的側面與第 一突起2202的表面平行。所述電子發射層216的電子發射體2162向第一突起2202的表面垂直延伸。可以理解，所述電子發射體2162發射的電子轟擊第一突起2202的表面激發的二次電子更容易在柵極電極222作用下從電子出射部射出。 The shapes and sizes of the first protrusions 2202 and the second protrusions 2142 are not limited, and may be selected according to actual needs. It can be understood that when the cathode electrode 214 is a layered structure having a through hole, the first protrusion 2202 may be a tapered shape, and the second protrusion 2142 is an annular protrusion surrounding the first protrusion 2202; When the cathode electrode 214 is a plurality of spaced strip structures, the first protrusions 2202 and the second protrusions 2142 may be a pyramid extending along a strip structure. In this embodiment, the first protrusion 2202 is a cone pointing to the first opening 2140. The side of the second protrusion 2142 opposite to the first protrusion 2202 and the The surface of one of the protrusions 2202 is parallel. The electron emitter 2162 of the electron emission layer 216 extends perpendicularly to the surface of the first protrusion 2202. It can be understood that the electrons emitted by the electron emitter 2162 bombard the secondary electrons excited by the surface of the first protrusion 2202 and are more easily emitted from the electron emitting portion by the gate electrode 222.
請參閱圖6，本發明第三實施例提供一種場發射裝置300，其包括一絕緣基底310，一第一絕緣隔離層312，一陰極電極314，一電子發射層316，一電子引出電極318，一二次電子發射層320，一第二絕緣隔離層321以及一柵極電極322。本發明第三實施例提供的場發射裝置300的結構與本發明第一實施例提供的場發射裝置100的結構基本相同，其區別在於所述第二絕緣隔離層321的厚度大於500微米，所述第二絕緣隔離層321具有一第三開口3212，所述第三開口3212的內壁，即第二絕緣隔離層321靠近電子出射部的表面進一步設置有二次電子發射材料，且第三開口3212的大小沿著遠離電子引出電極318的方向逐漸減小，以使得二次電子發射層320發射的電子更容易轟擊到第三開口3212內壁的二次電子發射材料。所述柵極電極322為一圓環形導電層。所述柵極電極322可以對二次電子發射層320發射的電子起到聚焦作用。 Referring to FIG. 6 , a third embodiment of the present invention provides a field emission device 300 including an insulating substrate 310 , a first insulating isolation layer 312 , a cathode electrode 314 , an electron emission layer 316 , and an electron extraction electrode 318 . A secondary electron emission layer 320, a second insulating isolation layer 321 and a gate electrode 322. The structure of the field emission device 300 provided by the third embodiment of the present invention is substantially the same as that of the field emission device 100 provided by the first embodiment of the present invention, except that the thickness of the second insulating isolation layer 321 is greater than 500 micrometers. The second insulating isolation layer 321 has a third opening 3212. The inner wall of the third opening 3212, that is, the surface of the second insulating isolation layer 321 adjacent to the electron emitting portion is further provided with a secondary electron emission material, and the third opening The size of 3212 gradually decreases in a direction away from the electron extraction electrode 318, so that electrons emitted from the secondary electron emission layer 320 are more likely to bombard the secondary electron emission material to the inner wall of the third opening 3212. The gate electrode 322 is a circular conductive layer. The gate electrode 322 can focus on electrons emitted from the secondary electron emission layer 320.
請參閱圖7，本發明第四實施例提供一種場發射裝置400，其包括一絕緣基底410，一第一絕緣隔離層412，一陰極電極414，一電子發射層416，一電子引出電極418，一二次電子發射層420，一第二絕緣隔離層421，一二次電子倍增極424，一第三絕緣隔離層426，以及一柵極電極422。本發明第四 實施例提供的場發射裝置400的結構與本發明第一實施例提供的場發射裝置100的結構基本相同，其區別在於所述第二絕緣隔離層421與柵極電極422之間進一步包括一二次電子倍增極424以及一第三絕緣隔離層426。所述柵極電極422與二次電子倍增極424之間通過該第三絕緣隔離層426絕緣。所述柵極電極422為一金屬柵網。 Referring to FIG. 7, a fourth embodiment of the present invention provides a field emission device 400 including an insulating substrate 410, a first insulating isolation layer 412, a cathode electrode 414, an electron emission layer 416, and an electron extraction electrode 418. A secondary electron emission layer 420, a second insulating isolation layer 421, a secondary electron dynode 424, a third insulating isolation layer 426, and a gate electrode 422. Fourth invention The structure of the field emission device 400 provided by the embodiment is substantially the same as that of the field emission device 100 provided by the first embodiment of the present invention, except that the second insulating isolation layer 421 and the gate electrode 422 further include one or two. The secondary electron dynode 424 and a third insulating isolation layer 426. The gate electrode 422 and the secondary electron dynode 424 are insulated by the third insulating isolation layer 426. The gate electrode 422 is a metal grid.
所述二次電子倍增極424為一導電層，其厚度大於500微米，且其具有一與第一開口4140對應的第四開口4240。該第四開口4240的內壁，即二次電子倍增極424靠近電子出射部的表面，塗敷有二次電子發射材料4242，以進一步增強場發射裝置400的場發射電流密度。進一步，所述第四開口4240的內壁還可以形成複數個凹凸結構以增加塗敷二次電子發射材料4242的面積。所述場發射裝置400工作時，電子引出電極418的電位高於陰極電極414的電位，二次電子倍增極424的電位高於電子引出電極518的電位，柵極電極422的電位高於二次電子倍增極424的電位。可以理解，所述二次電子發射層420發射的電子在二次電子倍增極424的作用下可以更有力的轟擊二次電子倍增極424表面的二次電子發射材料4242，以激發更過的二次電子。 The secondary electron dynode 424 is a conductive layer having a thickness greater than 500 microns and having a fourth opening 4240 corresponding to the first opening 4140. The inner wall of the fourth opening 4240, that is, the surface of the secondary electron dynode 424 near the electron emission portion, is coated with a secondary electron emission material 4242 to further enhance the field emission current density of the field emission device 400. Further, the inner wall of the fourth opening 4240 may further form a plurality of concave and convex structures to increase the area of the coated secondary electron emission material 4242. When the field emission device 400 is in operation, the potential of the electron extraction electrode 418 is higher than the potential of the cathode electrode 414, the potential of the secondary electron dynode 424 is higher than the potential of the electron extraction electrode 518, and the potential of the gate electrode 422 is higher than twice. The potential of the electron dynode 424. It can be understood that the electrons emitted by the secondary electron emission layer 420 can bombard the secondary electron emission material 4242 on the surface of the secondary electron dynode 424 more strongly under the action of the secondary electron dynode 424 to excite the second. Secondary electrons.
請參閱圖8，本發明第五實施例提供一種場發射裝置500，其包括一絕緣基底510，一第一絕緣隔離層512，一陰極電極514，一電子發射層516，一電子引出電極518，一二次電子發射層520，一第二絕緣隔離層521，一柵極電極522以及一 陽極電極530。本發明第五實施例提供的場發射裝置500的結構與本發明第一實施例提供的場發射裝置100的結構基本相同，其區別在於所述場發射裝置500進一步包括一與陰極電極514間隔設置的陽極電極530。所述陰極電極514設置於陽極電極530與電子引出電極518之間，所述柵極電極522設置於陽極電極530與陰極電極514之間。所述陽極電極530為一導電層，其材料可以為氧化銦錫，金屬，奈米碳管等。本實施例中，所述陽極電極530為氧化銦錫透明導電層。所述場發射裝置500工作時，電子引出電極518的電位高於陰極電極514的電位，柵極電極522的電位高於電子引出電極518的電位，陽極電極530的電位高於柵極電極522的電位。可以理解，所述柵極電極522為一可選結構。 Referring to FIG. 8 , a fifth embodiment of the present invention provides a field emission device 500 including an insulating substrate 510 , a first insulating isolation layer 512 , a cathode electrode 514 , an electron emission layer 516 , and an electron extraction electrode 518 . a secondary electron emission layer 520, a second insulating isolation layer 521, a gate electrode 522, and a Anode electrode 530. The structure of the field emission device 500 provided by the fifth embodiment of the present invention is basically the same as that of the field emission device 100 provided by the first embodiment of the present invention, except that the field emission device 500 further includes a space interval from the cathode electrode 514. Anode electrode 530. The cathode electrode 514 is disposed between the anode electrode 530 and the electron extraction electrode 518 , and the gate electrode 522 is disposed between the anode electrode 530 and the cathode electrode 514 . The anode electrode 530 is a conductive layer, and the material thereof may be indium tin oxide, metal, carbon nanotubes or the like. In this embodiment, the anode electrode 530 is an indium tin oxide transparent conductive layer. When the field emission device 500 is in operation, the potential of the electron extraction electrode 518 is higher than the potential of the cathode electrode 514, the potential of the gate electrode 522 is higher than the potential of the electron extraction electrode 518, and the potential of the anode electrode 530 is higher than that of the gate electrode 522. Potential. It can be understood that the gate electrode 522 is an optional structure.
綜上所述，本發明確已符合發明專利之要件，遂依法提出專利申請。惟，以上所述者僅為本發明之較佳實施例，自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
110‧‧‧絕緣基底 110‧‧‧Insulation base
112‧‧‧第一絕緣隔離層 112‧‧‧First insulation barrier
1120‧‧‧第二開口 1120‧‧‧ second opening
114‧‧‧陰極電極 114‧‧‧Cathode electrode
1140‧‧‧第一開口 1140‧‧‧ first opening
116‧‧‧電子發射層 116‧‧‧electron emission layer
118‧‧‧電子引出電極 118‧‧‧Electrical extraction electrode
120‧‧‧二次電子發射層 120‧‧‧Secondary electron emission layer
121‧‧‧第二絕緣隔離層 121‧‧‧Second insulation isolation layer
122‧‧‧柵極電極 122‧‧‧ gate electrode
Claims (10)
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5378963A (en) * | 1991-03-06 | 1995-01-03 | Sony Corporation | Field emission type flat display apparatus |
| US20010050537A1 (en) * | 1999-12-28 | 2001-12-13 | Futaba Denshi Kogyo Kabushiki Kaisha | Fluorescent luminous type display device |
| TW200616000A (en) * | 2004-11-12 | 2006-05-16 | Hon Hai Prec Ind Co Ltd | Field emission cathode and field emission device using same |
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- 2010-05-25 TW TW99116611A patent/TWI407478B/en active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5378963A (en) * | 1991-03-06 | 1995-01-03 | Sony Corporation | Field emission type flat display apparatus |
| US20010050537A1 (en) * | 1999-12-28 | 2001-12-13 | Futaba Denshi Kogyo Kabushiki Kaisha | Fluorescent luminous type display device |
| TW200616000A (en) * | 2004-11-12 | 2006-05-16 | Hon Hai Prec Ind Co Ltd | Field emission cathode and field emission device using same |
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