TWI405623B - Spinning apparatus for treating substrates - Google Patents
Spinning apparatus for treating substrates Download PDFInfo
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- TWI405623B TWI405623B TW095124312A TW95124312A TWI405623B TW I405623 B TWI405623 B TW I405623B TW 095124312 A TW095124312 A TW 095124312A TW 95124312 A TW95124312 A TW 95124312A TW I405623 B TWI405623 B TW I405623B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- Cleaning Or Drying Semiconductors (AREA)
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- Separation, Recovery Or Treatment Of Waste Materials Containing Plastics (AREA)
Abstract
Description
本發明係有關於一種可以第1處理液及第2處理液來處理固持於旋轉台之基板的基板之旋轉處理裝置。The present invention relates to a rotation processing apparatus that can process a substrate held on a substrate of a turntable by a first processing liquid and a second processing liquid.
例如，在液晶顯示螢幕的製造過程當中，會在方形玻璃製基板上形成電路圖案，而在形成電路圖案時，則會對前述基板進行顯像處理、蝕刻處理或是抗蝕劑剝離處理等。在進行該等處理時，首先會將作為第1處理液之顯像液、蝕刻液或是剝離液等供應至基板來進行預定處理，接著再供應作為第2處理液之純水等洗淨液進行洗淨處理。For example, in the manufacturing process of the liquid crystal display panel, a circuit pattern is formed on the square glass substrate, and when the circuit pattern is formed, the substrate is subjected to development processing, etching treatment, resist stripping treatment, or the like. In the case of performing the above-described processing, the developing solution, the etching liquid, the stripping liquid, and the like as the first processing liquid are supplied to the substrate to perform predetermined processing, and then the cleaning liquid such as pure water as the second processing liquid is supplied. Washing is carried out.
因顯像液、蝕刻液或是剝離液等第1處理液的價格高，故一般都會循環使用。在循環使用第1處理液時，不會將第1處理液與第2處理液混在一起回收。Since the first treatment liquid such as a developing solution, an etching solution, or a peeling liquid is expensive, it is generally recycled. When the first treatment liquid is recycled, the first treatment liquid and the second treatment liquid are not mixed and recovered.
另一方面，可使基板旋轉並同時以處理液處理之旋轉處理裝置具有蓋體，且該蓋體內設有旋轉台。旋轉台設有用以支撐前述基板四隅部分下面和側面的支撐銷。又，當使前述旋轉台旋轉並將處理液供應至基板來進行處理時，供應至該基板之處理液會因離心力而飛散至周邊部。On the other hand, a rotary processing apparatus which can rotate a substrate while being treated with a treatment liquid has a lid body, and a rotating table is provided in the lid body. The rotary table is provided with a support pin for supporting the underside and the side of the four-turn portion of the substrate. Further, when the rotating table is rotated and the processing liquid is supplied to the substrate for processing, the processing liquid supplied to the substrate is scattered to the peripheral portion by the centrifugal force.
一旦從基板飛散之處理液在前述蓋體之內周面反射而回到基板的方向，就會附著在基板上而成為污染的原因。因此，專利文獻1揭示有在蓋體內周面設置傾斜之整流環的方法。藉由設置整流環，可將由基板飛散之處理液往下方反射，而可防止其回到基板。When the treatment liquid scattered from the substrate is reflected on the inner peripheral surface of the lid body and returned to the direction of the substrate, it adheres to the substrate and causes contamination. Therefore, Patent Document 1 discloses a method of providing an inclined rectifying ring on the circumferential surface of the cover body. By providing a rectifying ring, the processing liquid scattered by the substrate can be reflected downward to prevent it from returning to the substrate.
【專利文獻1】特開2002－261073號公報[Patent Document 1] JP-A-2002-261073
然而，專利文獻1所揭示之旋轉處理裝置並未揭示藉由第1處理液及第2處理液來依序處理基板，再分開回收該等處理液的情形。在分開回收第1處理.液及第2處理液時，無論是藉由第1處理液還是第2處理液來處理基板，都得防止由基板飛散之處理液回到基板。However, the rotation processing apparatus disclosed in Patent Document 1 does not disclose that the substrates are sequentially processed by the first treatment liquid and the second treatment liquid, and the treatment liquids are separately collected. When the first treatment liquid and the second treatment liquid are separately collected, the treatment liquid scattered by the substrate is prevented from returning to the substrate regardless of whether the substrate is treated by the first treatment liquid or the second treatment liquid.
但是，因專利文獻1所揭示之旋轉處理裝置並未揭示分開回收2種類之處理液的情形，故並未揭示在分開回收2種類之處理液時，防止由基板飛散之處理液分別回到基板的方法。However, the rotation processing apparatus disclosed in Patent Document 1 does not disclose the case where two types of processing liquids are separately collected. Therefore, it is not disclosed that when the two types of processing liquids are separately collected, the processing liquid scattered by the substrate is prevented from returning to the substrate separately. Methods.
本發明可提供一種旋轉處理裝置，係在以第1處理液及第2處理液來依序處理基板時，可分開回收各處理液，且可防止由基板飛散之處理液分別回到基板而附著於其上者。According to the present invention, in the case where the substrate is sequentially processed by the first treatment liquid and the second treatment liquid, the treatment liquid can be separately collected, and the treatment liquid scattered by the substrate can be prevented from returning to the substrate and attached. On top of it.
本發明係一種基板之旋轉處理裝置，係可使基板旋轉並同時以第1處理液和第2處理液處理該基板者，包含有：外蓋體；旋轉台，係設於該外蓋體內，且可在上面固持有前述基板的狀態下藉由旋轉驅動機構來驅動旋轉者；內蓋體，係設於前述外蓋體內，且可藉由上下驅動機構在上端較前述旋轉台上面低之下降位置、與上端較固持於前述旋轉台之前述基板高之上升位置之間上下驅動者；第1反射機構，係設於前述外蓋體內周部，且於前述內蓋體位於下降位置的狀態下，在使前述基板旋轉並以前述第2處理液進行處理時，可使由前述基板周邊部飛散之前述第2處理液反射至下方者；及第2反射機構，係設於前述內蓋體內周部，且於該內蓋體位於上升位置的狀態下，在使前述基板旋轉並以前述第1處理液進行處理時，可使由前述基板周邊部飛散之前述第1處理液反射至下方者。The present invention relates to a substrate processing apparatus for rotating a substrate and simultaneously processing the substrate with the first processing liquid and the second processing liquid, and includes: an outer cover; and a rotary table disposed in the outer cover; And the rotator can be driven by the rotation driving mechanism while the substrate is fixed on the upper surface; the inner cover body is disposed in the outer cover body, and can be lower than the upper surface of the rotary table by the upper and lower driving mechanisms at the upper end a lowering position and a vertical driving position between the upper end and the rising position of the substrate on the rotating table; the first reflecting mechanism is disposed on the inner peripheral portion of the outer cover, and the inner cover is in a lowered position. When the substrate is rotated and processed by the second processing liquid, the second processing liquid scattered from the peripheral portion of the substrate may be reflected to the lower side; and the second reflecting mechanism may be disposed in the inner cover body. In the peripheral portion, when the inner cover is in the raised position, when the substrate is rotated and processed by the first processing liquid, the first processing liquid scattered from the peripheral portion of the substrate can be reversed To those below.
根據本發明，因外蓋體與內蓋體之內周部分別設有用以將由基板周邊部飛散之處理液往下方反射的反射機構，故無論是在使內蓋體上升然後以第1處理液處理基板時，還是在使內蓋體下降然後以第2處理液處理基板時，皆可防止由基板飛散之處理液往回到基板的方向反射。According to the present invention, since the inner peripheral portion of the outer lid body and the inner lid body are respectively provided with a reflecting mechanism for reflecting the processing liquid scattered around the peripheral portion of the substrate, the first processing liquid is raised by raising the inner lid body. When the substrate is processed, when the inner lid body is lowered and the substrate is treated with the second treatment liquid, it is possible to prevent the treatment liquid scattered by the substrate from being reflected back toward the substrate.
以下參照圖式說明本發明之一實施形態。An embodiment of the present invention will be described below with reference to the drawings.
第1圖至第3圖所顯示之旋轉處理裝置設有外蓋體1，且該外蓋體1具有上面具開口之有底角筒狀周壁1a。該周壁1a上端朝徑方向內側設有以約30度的角度傾斜之上部傾斜壁2，且該上部傾斜壁2上端之內周緣設有圓筒狀垂直壁3。The rotary processing apparatus shown in Figs. 1 to 3 is provided with an outer cover 1, and the outer cover 1 has a bottomed cylindrical peripheral wall 1a having an upper mask opening. The upper end of the peripheral wall 1a is provided with an inclined wall 2 inclined at an angle of about 30 degrees toward the inner side in the radial direction, and a cylindrical vertical wall 3 is provided at an inner periphery of the upper end of the upper inclined wall 2.
前述外蓋體1之內周面的高度方向中間部以預定間隔於周方向上設有支柱4a，各支柱4a上設有一邊固定於支柱4a且截面形狀為L字形之托架4b。該托架4b之另一邊則透過間隔件7在上下方向以預定間隔積層有作為第1反射機構之複數環狀反射板、在本實施形態中係4片第1反射板6。The intermediate portion in the height direction of the inner peripheral surface of the outer cover 1 is provided with a support 4a at a predetermined interval in the circumferential direction, and each of the stays 4a is provided with a bracket 4b which is fixed to the support 4a and has an L-shaped cross section. On the other side of the bracket 4b, a plurality of annular reflecting plates as a first reflecting means are stacked at predetermined intervals in the vertical direction through the spacer 7, and in the present embodiment, four first reflecting plates 6 are provided.
所積層之第1反射板6與間隔件7之間插通有螺軸8，且該螺軸8固定於前述托架4上。前述第1反射板6之前端部係如30度的角度向外蓋體1之徑方向內側高高地傾斜，而底端部則形成有圖未示之通孔。該通孔可讓如後述滴下至各第1反射板6上面側之第2處理液流往下方。又，外蓋體1係載置固定於架台9上面。A screw shaft 8 is inserted between the first reflecting plate 6 and the spacer 7 , and the screw shaft 8 is fixed to the bracket 4 . The front end portion of the first reflecting plate 6 is inclined at an angle of 30 degrees to the inner side in the radial direction of the outer cover body 1, and a through hole (not shown) is formed at the bottom end portion. This through hole allows the second processing liquid dropped to the upper surface side of each of the first reflecting plates 6 to flow downward as will be described later. Further, the outer cover 1 is placed and fixed on the upper surface of the gantry 9.
前述外蓋體1內設有旋轉台11。該旋轉台11具有圓盤狀底部12，且該底部12上以90度間隔於周方向上設置有連接固定底部之4隻臂部13。又，相鄰之一對臂部13間設有較臂部13短之補助臂13a。A rotary table 11 is provided in the outer cover 1 described above. The turntable 11 has a disk-shaped bottom portion 12, and the bottom portion 12 is provided with four arm portions 13 that connect and fix the bottom portion at intervals of 90 degrees in the circumferential direction. Further, between the adjacent ones of the arm portions 13, the auxiliary arm 13a which is shorter than the arm portion 13 is provided.
前述底部12、臂部13及輔助臂13a設有用以支撐用於液晶顯示裝置之方形玻璃製基板W下面的支撐銷14。而且，各臂部13前端部設有卡合在基板W各角部之一對側面上之卡合銷15。The bottom portion 12, the arm portion 13, and the auxiliary arm 13a are provided with support pins 14 for supporting the underside of the square glass substrate W for the liquid crystal display device. Further, the front end portion of each arm portion 13 is provided with an engaging pin 15 that is engaged with one side surface of each corner portion of the substrate W.
為旋轉台11之支撐銷14所支撐之基板W的高度係設定成較設於外蓋體1內周面之4片第1反射板6中最下段之反射板6高、而較由上數來第3片之第1反射板6上端低的位置。The height of the substrate W supported by the support pins 14 of the rotary table 11 is set to be higher than the lowermost reflection plate 6 among the four first reflection plates 6 provided on the inner circumferential surface of the outer cover 1 The upper end of the first reflecting plate 6 of the third piece is lowered.
所以，由上數來第3片之第1反射板6係作為如後述將由基板W朝水平方向飛散之第2處理液往下方反射之第1反射部，而上面2片第1反射板則係作為將由基板W朝斜上方飛散之第2處理液往下方反射之第2反射部。Therefore, the first reflecting plate 6 of the third sheet is the first reflecting portion that reflects the second processing liquid scattered in the horizontal direction from the substrate W as will be described later, and the first two reflecting plates are provided on the upper surface. The second reflection portion that reflects the second processing liquid scattered obliquely upward from the substrate W is downward.
如第1圖所示，前述旋轉台11之底部12係透過連接筒體16連接於控制馬達17。該控制馬達17之定子18內設有轉子19，且該轉子19連接有前述連接筒體16下端。因此，只要前述控制馬達17一動作，即可驅動前述旋轉台11朝第3圖之箭頭所示之逆時針方向旋轉。又，控制馬達17係安裝固定於前述架台9上面。As shown in Fig. 1, the bottom portion 12 of the turntable 11 is connected to the control motor 17 through the connection cylinder 16. A rotor 19 is disposed in the stator 18 of the control motor 17, and the lower end of the connecting cylinder 16 is connected to the rotor 19. Therefore, as long as the control motor 17 is actuated, the rotary table 11 can be driven to rotate counterclockwise as indicated by the arrow in FIG. Further, the control motor 17 is attached and fixed to the upper surface of the gantry 9.
前述外蓋體1內設有內蓋體21。該內蓋體21具有環部22，且該環部22係外徑尺寸較前述外蓋體1之內徑尺寸小，而內徑尺寸較前述旋轉台11之外徑尺寸大者，並且該環部22外周連接固定於圓筒狀周壁23下端。An inner lid body 21 is provided in the outer cover body 1. The inner cover body 21 has a ring portion 22, and the outer diameter of the ring portion 22 is smaller than the inner diameter of the outer cover body 1 , and the inner diameter is larger than the outer diameter of the rotary table 11 , and the ring is The outer periphery of the portion 22 is connected and fixed to the lower end of the cylindrical peripheral wall 23.
前述周壁23上端設有向徑方向內側以如30度的角度傾斜、且作為第2反射部之上部傾斜壁24，而內周面則設有以與前述上部傾斜壁24相同角度傾斜、且作為第1反射部之環狀第2反射板25。第2反射板25底端部形成有圖未示之通孔，該通孔可讓在上部傾斜板24下面如後述向下方反射之第1處理液往下方滴落。The upper end of the peripheral wall 23 is provided at an angle of 30 degrees toward the inner side in the radial direction, and is inclined as the upper portion of the second reflecting portion, and the inner peripheral surface is provided at the same angle as the upper inclined wall 24, and The annular second reflecting plate 25 of the first reflecting portion. The bottom end portion of the second reflecting plate 25 is formed with a through hole (not shown) which allows the first processing liquid which is reflected downward as described later on the lower side of the upper inclined plate 24 to drip downward.
前述內蓋體21之前述環部22內周面在於周方向上偏離180度的位置向徑方向內側有一對連接片26延伸而出。各連接片26中間部分別連接固定於構成上下驅動機構27之滑軸28上端。又，滑軸28突出至前述外蓋體1內的部分係由伸縮囊30所披覆。The inner circumferential surface of the ring portion 22 of the inner lid body 21 has a pair of connecting pieces 26 extending inward in the radial direction at a position shifted by 180 degrees in the circumferential direction. The intermediate portions of the respective connecting pieces 26 are connected and fixed to the upper ends of the slide shafts 28 constituting the vertical drive mechanism 27, respectively. Further, a portion of the slide shaft 28 that protrudes into the outer cover 1 is covered by the bellows 30.
一對滑軸28係以可滑動的狀態支撐於設於前述架台9之軸承29。滑軸28由前述軸承29突出之下端係連接於滑件31。一對滑件31係以可滑動的狀態支撐於沿上下方向設於前述架台9之線性滑軌上。The pair of slide shafts 28 are slidably supported by the bearing 29 provided on the above-described gantry 9. The slide shaft 28 is connected to the slider 31 by the lower end of the aforementioned bearing 29. The pair of sliders 31 are slidably supported by linear slides provided on the gantry 9 in the vertical direction.
一對滑件31係藉由連接構件33連接在一起。連接構件33之中間部連接有與軸線垂直且設於前述架台9之氣缸34上的桿部35。因此，如第1圖所示，氣缸34之桿部35一旦被賦予往突出方向之勢能，則內蓋體21之上端、及上部傾斜壁24上端就會固持在較固持於旋轉台11之基板W高的上升位置。A pair of sliders 31 are connected together by a connecting member 33. The intermediate portion of the connecting member 33 is connected to a rod portion 35 which is perpendicular to the axis and is provided on the cylinder 34 of the aforementioned gantry 9. Therefore, as shown in FIG. 1, once the rod portion 35 of the cylinder 34 is given the potential energy in the protruding direction, the upper end of the inner lid body 21 and the upper end portion of the upper inclined wall 24 are held on the substrate held by the rotary table 11 W high rise position.
如第2圖所示，前述氣缸34之桿部35一旦被賦予往沒入方向之勢能，則前述內蓋體21之上部傾斜壁24上端就會固持在較固持於旋轉台11之基板W低的下降位置。下降位置可為上部傾斜壁24上端較基板W低的位置，但若為上部傾斜壁24上端較旋轉台11上面低的位置則更佳。As shown in Fig. 2, when the rod portion 35 of the cylinder 34 is given a potential energy in the immersed direction, the upper end of the inclined wall 24 at the upper portion of the inner lid body 21 is held at a lower level than the substrate W held by the rotary table 11. The drop position. The lowering position may be a position where the upper end of the upper inclined wall 24 is lower than the substrate W, but it is more preferable if the upper end of the upper inclined wall 24 is lower than the upper surface of the rotary table 11.
前述外蓋體1內底部設有構成覆蓋前述內蓋體21外周面之圓筒狀引導機構的導環37。如第2圖所示，導環37上端的高度係設定成在內蓋體21下降時，與該內蓋體21上部傾斜部24下端、即周壁23上端幾乎相同的位置。而且，導環37下端部形成有向外蓋體1周壁1a之下端部傾斜之傾斜部37a。A guide ring 37 constituting a cylindrical guide mechanism that covers the outer peripheral surface of the inner lid body 21 is provided in the bottom portion of the outer lid body 1. As shown in Fig. 2, the height of the upper end of the guide ring 37 is set to be almost the same as the lower end of the upper inclined portion 24 of the inner lid body 21, that is, the upper end of the peripheral wall 23 when the inner lid body 21 is lowered. Further, the lower end portion of the guide ring 37 is formed with an inclined portion 37a which is inclined at the lower end portion of the peripheral wall 1a of the outer cover body 1.
如第1圖及第3圖所示，前述外蓋體1底部在對應前述內蓋體21周壁23之徑方向內側的位置上，連接有複數例如於周方向上以180度間隔構成第2排出部之2條第1排出管38。而且，前述外蓋體1之底壁上同樣連接有複數8條第2排出管39，且該第2排出管39係在與前述內蓋體21之周壁23外側之前述導環37的傾斜部37a相對的位置上構成第1排出部 者。As shown in FIG. 1 and FIG. 3, the bottom of the outer cover 1 is connected to the inner side in the radial direction of the peripheral wall 23 of the inner lid body 21, and a plurality of second discharges are formed at intervals of 180 degrees, for example, in the circumferential direction. Two first discharge pipes 38 of the section. Further, a plurality of second discharge pipes 39 are connected to the bottom wall of the outer cover 1, and the second discharge pipe 39 is attached to the inclined portion of the guide ring 37 outside the peripheral wall 23 of the inner cover 21. The first discharge portion is formed at a position opposite to 37a By.
如後述，前述外蓋體1之底壁之第1排出管38與第2排出管39之間，涵蓋周方向地設有作為遮蔽機構之遮蔽壁40，係可防止經由前述第1排出管38排出之第1處理液流至第2排出管39，及經由前述第2排出管39排出之第2處理液流至第1排出管38者。As will be described later, the shielding wall 40 as a shielding mechanism is provided between the first discharge pipe 38 and the second discharge pipe 39 of the bottom wall of the outer cover 1 so as to prevent passage through the first discharge pipe 38. The discharged first processing liquid flows to the second discharge pipe 39, and the second processing liquid discharged through the second discharge pipe 39 flows to the first discharge pipe 38.
前述外蓋體1內底部設有圓錐台狀之傾斜壁41。該傾斜壁41上端設有液密地與周邊部接合且插通前述控制馬達17之環狀蓋構件42。該蓋構件42與控制馬達17連通之開口部部分係藉由密封構件43液密地遮蔽起來。The bottom of the outer cover 1 is provided with a truncated-cone inclined wall 41. The upper end of the inclined wall 41 is provided with an annular cover member 42 that is fluid-tightly engaged with the peripheral portion and that is inserted into the control motor 17. The opening portion of the cover member 42 that communicates with the control motor 17 is liquid-tightly shielded by the sealing member 43.
而且，前述外蓋體1上方配置有用以供應第1蝕刻液或剝離液等第1處理液之第1噴嘴體44、及用以供應洗淨液之純水等第2處理液之第2噴嘴體45。Further, a first nozzle body 44 for supplying a first processing liquid such as a first etching liquid or a peeling liquid, and a second nozzle for supplying a second processing liquid such as pure water for supplying a cleaning liquid are disposed above the outer cover 1 Body 45.
又，前述旋轉台11之各臂部13上面設有外徑尺寸些微小於設於前述內蓋體21之上部傾斜壁24及第2反射板25之內徑尺寸之圓盤狀遮蔽板47。Further, the upper surface of each of the arm portions 13 of the turntable 11 is provided with a disk-shaped shielding plate 47 having an outer diameter which is slightly smaller than the inner diameter of the inclined wall 24 and the second reflecting plate 25 provided on the upper portion of the inner lid body 21.
如第3圖所示，前述外蓋體1底臂之四隅部連接有較前述第2排出管39大徑之第3排出管51。對稱沿前述外蓋體1之徑方向之中心線位於左側及右側之複數第2、第3排出管39、51係分別連接於一對氣液分離裝置52。各氣液分離裝置52連接有排氣管53及排液管54。As shown in Fig. 3, a third discharge pipe 51 having a larger diameter than the second discharge pipe 39 is connected to the four ends of the bottom arm of the outer cover 1. The plurality of second and third discharge pipes 39 and 51 which are symmetrically located on the left and right sides along the center line of the radial direction of the outer cover 1 are connected to the pair of gas-liquid separation devices 52, respectively. An exhaust pipe 53 and a drain pipe 54 are connected to each of the gas-liquid separation devices 52.
前述排氣管53係連接於圖未示之排氣鼓風機。當排氣鼓風機動作時，其吸力可透過氣液分離裝置52作用於第2、第3排出管39、51。藉此，吸力會作用於外蓋體1及內蓋體21內部，因此可藉由其吸力排出各蓋體1、21之環境氣體。The exhaust pipe 53 is connected to an exhaust blower (not shown). When the exhaust blower is operated, the suction force can be applied to the second and third discharge pipes 39, 51 through the gas-liquid separation device 52. Thereby, the suction force acts on the inside of the outer cover 1 and the inner cover 21, so that the ambient gas of each of the covers 1, 21 can be discharged by the suction force.
如第3圖所示，前述外蓋體1內設有圓弧狀導板55，且該導板55係可將由朝箭頭方向旋轉之旋轉台11飛散之處理液引導至設於前述外蓋體1之四隅部的第3排出管51。As shown in FIG. 3, the outer cover 1 is provided with an arc-shaped guide 55, and the guide 55 guides the treatment liquid scattered by the rotary table 11 rotating in the direction of the arrow to the outer cover. The third discharge pipe 51 of the first four of the crotch.
由前述旋轉台11飛散而流至前述導板55外面側之處理液的一部分係由前述第3排出管排出，而沿前述導板55內面流動之處理液則係滴落在前述導環37之傾斜部37a上面，再沿其傾斜方向下端流動。又，傾斜部37a於周方向上以預定間隔形成有複數切入部37b。藉此，可使流至傾斜部37a下端之處理液經由前述切入部37b而由前述第2排出部39排出。A part of the treatment liquid which is scattered by the rotary table 11 and flows to the outer surface side of the guide plate 55 is discharged by the third discharge pipe, and the treatment liquid flowing along the inner surface of the guide plate 55 is dropped on the guide ring 37. The upper surface of the inclined portion 37a flows along the lower end of the inclined portion. Further, the inclined portion 37a is formed with a plurality of cut portions 37b at predetermined intervals in the circumferential direction. Thereby, the processing liquid flowing to the lower end of the inclined portion 37a can be discharged from the second discharge portion 39 via the cutting portion 37b.
接著，說明藉由前述結構之旋轉處理裝置處理基板W時之作用。Next, the action when the substrate W is processed by the rotation processing apparatus of the above configuration will be described.
基板W係先以第1處理液處理，之後再以第2處理液洗淨處理。首先，如第2圖所示，在使內蓋體21下降的狀態下，將基板W供應至旋轉台11，然後以支撐銷14支撐該基板W下面，再以卡合銷15固持四隅部。The substrate W is first treated with the first treatment liquid, and then washed with the second treatment liquid. First, as shown in FIG. 2, the substrate W is supplied to the turntable 11 in a state where the inner lid body 21 is lowered, and then the lower surface of the substrate W is supported by the support pins 14, and the four snap portions are held by the engaging pins 15.
接著，使上下驅動機構27之氣缸34動作，賦予其桿部35往突出方向之勢能。藉此，如第1圖所示，使內蓋體21上升，讓其上部傾斜壁24上端的位置固定在較固持於旋轉台11之基板W高的上升位置。Next, the air cylinder 34 of the vertical drive mechanism 27 is operated to give the potential of the rod portion 35 in the protruding direction. As a result, as shown in FIG. 1, the inner lid body 21 is raised, and the position of the upper end of the upper inclined wall 24 is fixed to a raised position higher than the substrate W held by the turntable 11.
如果使內蓋體21上升，就可操作控制馬達17讓旋轉台11低速旋轉，且可將第1處理液由第1噴嘴體44供應至基板W上面幾乎中心的部分。When the inner lid body 21 is raised, the control motor 17 can be operated to rotate the turntable 11 at a low speed, and the first processing liquid can be supplied from the first nozzle body 44 to the substantially central portion of the upper surface of the substrate W.
供應至基板W上面之第1處理液係藉由基板W旋轉所產生之離心力由基板W周緣部向外側飛散。由基板W飛散之第1處理液會衝撞在內蓋體21之上部傾斜壁24或設於內周面之第2反射板25等下面。又，上部傾斜壁24或第2反射板25等係向徑方向內側高高地傾斜著。The first processing liquid supplied onto the upper surface of the substrate W is scattered outward from the peripheral edge portion of the substrate W by the centrifugal force generated by the rotation of the substrate W. The first processing liquid scattered by the substrate W collides with the upper surface of the inner lid body 21, the inclined wall 24, or the lower surface of the second reflecting plate 25 provided on the inner peripheral surface. Further, the upper inclined wall 24, the second reflecting plate 25, and the like are inclined obliquely toward the inner side in the radial direction.
因此，衝撞在上部傾斜壁24與第2反射板25下面之第1處理液會向下方反射，而不會向固持於旋轉台11之基板W反射，故不會有由基板W飛散之第1處理液再度附著在基板W上而成為污染原因的問題。Therefore, the first processing liquid that collides with the upper inclined wall 24 and the lower surface of the second reflecting plate 25 is reflected downward, and is not reflected to the substrate W held by the rotating table 11, so that the first substrate W does not scatter. The treatment liquid adheres again to the substrate W and becomes a cause of contamination.
供應至基板W之第1處理液係藉由基板W旋轉所產生之離心力，一部分由基板W上面飛散至如第4圖之箭頭A所示之水平方向，一部分則衝撞到用以固持基板W角落之卡合銷15，而向如箭頭B所示之斜上方飛散。The first processing liquid supplied to the substrate W is centrifugally generated by the rotation of the substrate W, and a part of the substrate W is scattered to the horizontal direction as indicated by the arrow A in FIG. 4, and a part is collided to hold the substrate W corner. The card is pinned to the pin 15, and is scattered obliquely upward as indicated by the arrow B.
飛散至箭頭A所示之水平方向之第1處理液會衝撞內蓋體21之第2反射板25下面而向下方反射。而衝撞到卡合銷15等向如箭頭B所示之斜上方飛散之第1處理液會衝撞到上部傾斜壁24下面而向下方反射，然後經由形成於第2反射板25之圖未示之通孔往下方滴落。The first processing liquid scattered in the horizontal direction indicated by the arrow A collides with the lower surface of the second reflecting plate 25 of the inner lid body 21 and is reflected downward. The first processing liquid that has collided with the engaging pin 15 or the like and is scattered obliquely upward as indicated by the arrow B collides against the lower surface of the upper inclined wall 24 and is reflected downward, and then is not shown through the second reflecting plate 25. The through hole is dripped downward.
因此，由基板W飛散之第1處理液的飛散方向無論是箭頭A還是箭頭B所指方向，皆會衝撞到固定在上升位置之內蓋體21之上部傾斜壁24與第2反射板25而反射至下方，故可防止第1處理液回到基板W側。Therefore, the scattering direction of the first processing liquid scattered by the substrate W collides with the inclined wall 24 and the second reflecting plate 25 in the upper portion of the inner lid body 21 fixed to the rising position, regardless of the direction indicated by the arrow A or the arrow B. Since it is reflected to the lower side, it can prevent that the 1st process liquid returns to the board|substrate W side.
藉由內蓋體21之上部傾斜壁24或第2反射板25等向下方反射之第1處理液會向外蓋體1底壁滴落。又，外蓋體1底 壁設有與內蓋體21之周壁23幾乎同徑之環狀遮蔽壁40。The first treatment liquid which is reflected downward by the inclined wall 24 or the second reflection plate 25 or the like on the upper surface of the inner lid body 21 is dropped on the bottom wall of the outer lid body 1. Also, the bottom of the outer cover 1 The wall is provided with an annular shielding wall 40 having substantially the same diameter as the peripheral wall 23 of the inner lid body 21.
因此，由內蓋體21滴落至外蓋體1底壁之第1處理液會經由設於前述遮蔽壁40內側之第1排出管38排出，而不會流至設於外側之第2排出管39。而且，排出至第1排出管38之第1處理液可回收再使用。Therefore, the first treatment liquid dropped from the inner lid body 21 to the bottom wall of the outer lid body 1 is discharged through the first discharge pipe 38 provided inside the shield wall 40, and does not flow to the second discharge provided on the outer side. Tube 39. Further, the first treatment liquid discharged to the first discharge pipe 38 can be recovered and reused.
以第1處理液處理基板W時，透過第2排出管39、第2排出管39所連接之氣液分離裝置52及連接於該氣液分離裝置52之排氣管53，可讓連接於該排氣管53之圖未示之排氣鼓風機的吸力在內蓋體21內作用。When the substrate W is treated with the first treatment liquid, the gas-liquid separation device 52 connected to the second discharge pipe 39 and the second discharge pipe 39, and the exhaust pipe 53 connected to the gas-liquid separation device 52 can be connected thereto. The suction of the exhaust blower, not shown, of the exhaust pipe 53 acts in the inner cover 21.
藉此，供應至內蓋體21內之第1處理液可由前述第1排出管38排出，且內蓋體21內之環境氣體可被與第2排出管39之開口面相對之導環37之傾斜部37a引導而由前述第2排出管39排出管排出。因內蓋體21內之環境氣體含有呈霧狀之第1處理液，一旦環境氣體殘留在內蓋體21內，第1處理液就會附著在內蓋體21內，然後在以第2處理液洗淨處理基板W時轉移至基板W上，成為污垢原因。Thereby, the first processing liquid supplied into the inner lid body 21 can be discharged by the first discharge tube 38, and the atmosphere in the inner lid body 21 can be guided by the guide ring 37 opposed to the opening surface of the second discharge tube 39. The inclined portion 37a is guided and discharged from the discharge tube of the second discharge pipe 39. Since the ambient gas in the inner lid body 21 contains the first treatment liquid in a mist form, once the ambient gas remains in the inner lid body 21, the first treatment liquid adheres to the inner lid body 21, and then the second treatment is performed. When the substrate W is washed by the liquid, it is transferred to the substrate W, which causes contamination.
但是，在該實施形態中，內蓋體21內之環境氣體係經由第2排出管39吸引至氣液分離裝置52。因此，可確實地排出含有霧狀第1處理液之內蓋體21內的環境氣體，故可防止第1處理液附著殘留在內蓋體21。However, in this embodiment, the ambient gas system in the inner lid body 21 is sucked into the gas-liquid separator 52 via the second discharge pipe 39. Therefore, since the atmosphere in the inner lid body 21 containing the mist-like first treatment liquid can be reliably discharged, it is possible to prevent the first treatment liquid from adhering to the inner lid body 21.
如此，如果完成第1處理液之基板W處理，即可停止供應第1處理液，使內蓋體21下降至如第5圖所示之下降位置。接著，使旋轉台11的旋轉速度上升，即，將旋轉台11的旋轉速度提高到比與以第1處理液處理基板W時高。As described above, when the substrate W treatment of the first treatment liquid is completed, the supply of the first treatment liquid can be stopped, and the inner lid body 21 can be lowered to the lowered position as shown in FIG. Next, the rotation speed of the turntable 11 is increased, that is, the rotation speed of the turntable 11 is increased to be higher than when the substrate W is processed by the first processing liquid.
如果使旋轉台11之旋轉速度上升，即可由第2噴嘴體45將由純水構成之第2處理液供應至中央部分。供應至基板W之第2處理液在洗淨基板W上面後便由其周邊部向外方飛散。When the rotational speed of the rotary table 11 is increased, the second treatment liquid composed of pure water can be supplied to the central portion by the second nozzle body 45. The second processing liquid supplied to the substrate W is scattered on the substrate W and then scattered outward from the peripheral portion thereof.
因內蓋體21係下降至較旋轉台11低之下降位置，故由基板W飛散之第2處理液不會衝撞到內蓋體21，而係向外蓋體1內周面飛散。Since the inner lid body 21 is lowered to a lower position lower than the rotary table 11, the second treatment liquid scattered by the substrate W does not collide with the inner lid body 21, but is scattered toward the inner peripheral surface of the outer lid body 1.
又，沒有飛散至外蓋體1內周面而滴落之第2處理液會滴落在遮蔽板47上，再由該遮蔽板47周邊部飛散至外蓋體1內周面。即，第2處理液不會滴落在內蓋體21內。Further, the second treatment liquid which has not been scattered to the inner peripheral surface of the outer cover 1 and dripped, is dropped on the shield plate 47, and is scattered around the peripheral portion of the outer cover 1 by the peripheral portion of the shield plate 47. That is, the second treatment liquid does not drip into the inner lid body 21.
外蓋體1內周面設有於上下方向以預定間隔積層之4片第1反射板6。固持於旋轉台11之基板W的高度在較最下段之第1反射板6上端高，且較由上數來第3片之第1反射板6低的位置。The inner peripheral surface of the outer cover 1 is provided with four first reflecting plates 6 stacked at predetermined intervals in the vertical direction. The height of the substrate W held by the turntable 11 is higher at the upper end of the first reflecting plate 6 than the lowermost portion, and is lower than the position of the first reflecting plate 6 of the third sheet.
因此，由基板W飛散之第2處理液之中，向如第5圖之箭頭A所示之水平方向飛散之第2處理液會衝撞到第3片之第1反射板6下面而向下方反射。又，由遮蔽板47飛散之第2處理液會衝撞到最下段之第1反射板6下面而反射至下方。Therefore, among the second processing liquids scattered by the substrate W, the second processing liquid scattered in the horizontal direction indicated by the arrow A in FIG. 5 collides with the lower surface of the first reflecting plate 6 of the third sheet and is reflected downward. . Further, the second processing liquid scattered by the shielding plate 47 collides with the lower surface of the lowermost first reflecting plate 6 and is reflected downward.
當由基板W飛散之第2處理液衝撞到固持有基板W之卡合銷15等時，飛散方向係該圖之箭頭B所示之上方。此時，第2處理液會衝撞到4片第1反射板6中最上段及由上數來第2片之第1反射板6等下面而向下方反射。而且，向較最上段之第1反射板6高之方向飛散之第2處理液會衝撞到設於外蓋體1周壁1上端之上部傾斜壁2下面，而向下方反射。When the second processing liquid scattered by the substrate W collides with the engaging pin 15 or the like of the solid holding substrate W, the scattering direction is upward as indicated by an arrow B in the figure. At this time, the second treatment liquid collides with the uppermost portion of the four first reflecting plates 6 and the lower surface of the first reflecting plate 6 of the second sheet, and is reflected downward. Further, the second processing liquid which is scattered in the direction higher than the uppermost first reflecting plate 6 collides with the lower surface of the upper inclined wall 2 provided on the upper end of the peripheral wall 1 of the outer cover 1, and is reflected downward.
因此，在以第2處理液洗淨處理基板W時，因基板W之旋轉速度比以第1處理液處理時較快，故第2處理液向上方飛散的情形很多，但即使在此種情形下，第2處理液仍可藉由第1反射板6或上部傾斜壁24等向下反射，而不會向基板W反射。因此，不會有由基板W飛散之第2處理液再度附著在基板W上成為污染原因的問題。Therefore, when the substrate W is processed by the second treatment liquid, since the rotation speed of the substrate W is faster than that in the first treatment liquid, the second treatment liquid is scattered upward, but even in this case, Further, the second treatment liquid can be reflected downward by the first reflection plate 6 or the upper inclined wall 24 or the like without being reflected to the substrate W. Therefore, there is no problem that the second processing liquid scattered by the substrate W adheres to the substrate W again and becomes a cause of contamination.
當第2處理液沒有衝撞到最上段之第1反射板6下面，而是衝撞到第1反射板6前端等時，並不會向下方反射，而是向第4圖之箭頭C所示之上方反射，而衝撞到上部傾斜壁2下面。此時，第2處理液會以上部傾斜壁2下面反射，然後衝撞到垂直壁3內面而滴落至下方。因此，即使在此種情形下，也可防止第2處理液回到基板W。When the second processing liquid does not collide with the lower surface of the first reflecting plate 6 but hits the front end of the first reflecting plate 6, etc., it does not reflect downward, but is shown by the arrow C in FIG. Reflected above and collided under the upper inclined wall 2. At this time, the second treatment liquid is reflected by the lower surface of the upper inclined wall 2, and then collides against the inner surface of the vertical wall 3 to drip down. Therefore, even in such a case, the second processing liquid can be prevented from returning to the substrate W.
以第1反射板6向下方反射之第2處理液係藉由旋轉台11的旋轉所賦予之離心力沿第1反射板6上面流至周方向，且引導至導板55內面而向設於外蓋體1四隅之第3排出管51飛散。藉此，第2處理液可與前述外蓋體1內之環境氣體一起吸引排出至前述第3排出管51。The second processing liquid which is reflected downward by the first reflecting plate 6 flows along the upper surface of the first reflecting plate 6 in the circumferential direction by the centrifugal force given by the rotation of the rotating table 11, and is guided to the inner surface of the guide plate 55 to be placed on the inner surface of the guide plate 55. The third discharge pipe 51 of the outer cover 1 is scattered. Thereby, the second treatment liquid can be sucked and discharged to the third discharge pipe 51 together with the ambient gas in the outer cover 1 described above.
以最下段之第1反射板6向下方反射、且由各第1反射板6之徑方向外側滴落在導環37之傾斜部37a上面之第2處理液會向前述傾斜部37a之傾斜方向下端流動。The second processing liquid which is reflected downward by the lowermost first reflecting plate 6 and which is dropped on the outer surface of the inclined portion 37a of the guide ring 37 in the radial direction of each of the first reflecting plates 6 is inclined toward the inclined portion 37a. The lower end flows.
前述傾斜部37a下端形成有切入部37b。因此，沿傾斜部37a流動之第2處理液可經由前述切入部37b吸引排出至第2排出管39。此時，因第2排出管39與第1排出管38之間設有遮蔽壁40，故可阻止第2處理液往第1排出管38流動。A cut portion 37b is formed at a lower end of the inclined portion 37a. Therefore, the second processing liquid flowing along the inclined portion 37a can be sucked and discharged to the second discharge pipe 39 via the cutting portion 37b. At this time, since the shielding wall 40 is provided between the second discharge pipe 39 and the first discharge pipe 38, the second processing liquid can be prevented from flowing to the first discharge pipe 38.
即，因第2處理液係經由與第1處理液相異之路徑排出，故不會混合於第1處理液中。因此，可確實地將第1處理液從第2處理液分開回收，故可重覆使用第1處理液。In other words, since the second treatment liquid is discharged through the path different from the first treatment liquid phase, it is not mixed in the first treatment liquid. Therefore, since the first treatment liquid can be reliably recovered from the second treatment liquid, the first treatment liquid can be reused.
如此，根據前述結構之旋轉處理裝置，無論是在使內蓋體21上升然後以第1處理液處理基板W時，還是使內蓋體21下降然後以第2處理液處理基板W時，即使第1、第2處理液由基板W向水平方向或較水平上面的方向飛散，不論其飛散方向為何，皆可使第1、第2處理液向下方反射來進行回收。In the rotation processing apparatus of the above-described configuration, even when the inner lid body 21 is raised and the substrate W is treated with the first treatment liquid, when the inner lid body 21 is lowered and the substrate W is treated with the second treatment liquid, even if the substrate W is processed by the second treatment liquid 1. The second processing liquid is scattered by the substrate W in the horizontal direction or the horizontally upper surface, and the first and second processing liquids are reflected downward and recovered, regardless of the scattering direction.
因此，可防止由基板W飛散之第1、第2處理液在內蓋體21或外蓋體1內周面反射而回到固持於旋轉台11之基板W，故不會有由基板W飛散之第2處理液再度附著在基板W上成為污染原因的問題。Therefore, it is possible to prevent the first and second processing liquids scattered by the substrate W from being reflected by the inner peripheral surface of the inner cover 21 or the outer cover 1 and returning to the substrate W held by the rotary table 11, so that the substrate W does not scatter. The second treatment liquid adheres to the substrate W again, causing a problem of contamination.
而且，因可藉由第1排出管38與第2排出管39確實地分開回收第1處理液和第2處理液，故可重複使用高價之第1處理液。Further, since the first treatment liquid and the second treatment liquid can be reliably separated by the first discharge pipe 38 and the second discharge pipe 39, the expensive first treatment liquid can be reused.
而且，因可藉由第2排出管39排出內蓋體21內之環境氣體，故在以第1處理液處理基板W時，呈霧狀且浮游在內蓋體21內之第1處理液不會附著殘留在內蓋體21。因此，在以第1處理液處理基板W後藉由第2處理液洗淨處理時，基板W不會被第1處理液污染，故可確實地進行第2處理液之基板洗淨處理。Further, since the ambient gas in the inner lid body 21 can be discharged by the second discharge pipe 39, when the substrate W is treated with the first treatment liquid, the first treatment liquid floating in the inner lid body 21 is in a mist form. It will adhere to the inner cover 21. Therefore, when the substrate W is treated with the first treatment liquid and then washed by the second treatment liquid, the substrate W is not contaminated by the first treatment liquid, so that the substrate cleaning treatment of the second treatment liquid can be surely performed.
在前述一實施形態中，雖係以用於液晶顯示裝置之方形玻璃基板作為基板來舉例說明，但基板亦可非玻璃基板，半導體晶片亦可使用本發明之旋轉處理裝置。In the above-described embodiment, the prismatic glass substrate used in the liquid crystal display device is exemplified as the substrate. However, the substrate may be a non-glass substrate, and the semiconductor wafer may use the rotation processing device of the present invention.
1‧‧‧外蓋體1‧‧‧Outer cover
1a‧‧‧周壁1a‧‧‧Wall
2‧‧‧上部傾斜壁2‧‧‧Upper inclined wall
3‧‧‧垂直壁3‧‧‧ vertical wall
4a‧‧‧支柱4a‧‧‧ pillar
4b‧‧‧托架4b‧‧‧ bracket
6‧‧‧第1反射板(第1反射機構)6‧‧‧1st reflector (first reflection mechanism)
7‧‧‧間隔件7‧‧‧ spacers
8‧‧‧螺軸8‧‧‧ screw shaft
9‧‧‧架台9‧‧‧Rack
11‧‧‧旋轉台11‧‧‧Rotating table
12‧‧‧底部12‧‧‧ bottom
13‧‧‧臂部13‧‧‧ Arms
13a‧‧‧輔助臂部13a‧‧‧Auxiliary arm
14‧‧‧支撐銷14‧‧‧Support pins
15‧‧‧卡合銷15‧‧‧ card sales
16‧‧‧連接筒體16‧‧‧Connecting cylinder
17‧‧‧控制馬達17‧‧‧Control motor
18‧‧‧定子18‧‧‧ Stator
19‧‧‧轉子19‧‧‧Rotor
21‧‧‧內蓋體21‧‧‧ inner cover
22‧‧‧環部22‧‧‧ Ring Department
23‧‧‧周壁23‧‧‧Weibi
24‧‧‧上部傾斜壁24‧‧‧Upper inclined wall
25‧‧‧第2反射板(第1反射部)25‧‧‧2nd reflector (first reflection part)
26‧‧‧連接片26‧‧‧Connecting piece
27‧‧‧上下驅動機構27‧‧‧Up and down drive mechanism
28‧‧‧滑軸28‧‧‧Sliding shaft
29‧‧‧軸承29‧‧‧ Bearing
30‧‧‧伸縮囊30‧‧‧ telescopic bladder
31‧‧‧滑件31‧‧‧Sliding parts
32‧‧‧線性滑軸32‧‧‧Linear sliding shaft
33‧‧‧連接構件33‧‧‧Connecting members
34‧‧‧氣缸34‧‧‧ cylinder
35‧‧‧桿部35‧‧‧ pole
37‧‧‧導環37‧‧‧Guide ring
37a‧‧‧傾斜部37a‧‧‧ inclined section
37b‧‧‧切入部37b‧‧‧cutting department
38‧‧‧第1排出管(第2排出部)38‧‧‧1st discharge pipe (2nd discharge part)
39‧‧‧第2排出管(第1排出部)39‧‧‧2nd discharge pipe (1st discharge part)
40‧‧‧遮蔽壁40‧‧‧ Shielded wall
41‧‧‧傾斜壁41‧‧‧ sloping wall
42‧‧‧蓋構件42‧‧‧Cover components
43‧‧‧密封構件43‧‧‧ Sealing members
44‧‧‧第1噴嘴體44‧‧‧1st nozzle body
45‧‧‧第2噴嘴體45‧‧‧2nd nozzle body
47‧‧‧遮蔽板47‧‧‧shading board
51‧‧‧第3排出管51‧‧‧3rd discharge pipe
52‧‧‧氣液分離裝置52‧‧‧Gas-liquid separation device
53‧‧‧排氣管53‧‧‧Exhaust pipe
54‧‧‧排液管54‧‧‧Draining tube
55‧‧‧導板55‧‧‧ Guide
A‧‧‧方向A‧‧‧ direction
B‧‧‧方向B‧‧‧ directions
C‧‧‧方向C‧‧‧ directions
W‧‧‧基板W‧‧‧Substrate
第1圖係顯示本發明之一實施形態之內蓋體位於上升位置時旋轉處理裝置的縱截面圖。Fig. 1 is a longitudinal sectional view showing a rotary processing apparatus when the inner lid body according to an embodiment of the present invention is in a raised position.
第2圖係顯示內蓋體位於下降位置時旋轉處理裝置的縱截面圖。Fig. 2 is a longitudinal sectional view showing the rotation processing device when the inner lid body is at the lowered position.
第3圖係顯示外蓋體周壁截面且省略一部分之旋轉處理裝置的橫截面圖。Fig. 3 is a cross-sectional view showing a cross-sectional view of a peripheral portion of the outer cover body and a part of which is omitted.
第4圖係顯示內蓋體位於上升位置時，旋轉台和內蓋體一部分的放大截面圖。Fig. 4 is an enlarged cross-sectional view showing a part of the rotary table and the inner cover when the inner cover is in the raised position.
第5圖係顯示內蓋體位於下降位置時，旋轉台和外蓋體一部分的放大截面圖。Figure 5 is an enlarged cross-sectional view showing a portion of the rotary table and the outer cover when the inner cover is in the lowered position.
1‧‧‧外蓋體1‧‧‧Outer cover
1a‧‧‧周壁1a‧‧‧Wall
2‧‧‧上部傾斜壁2‧‧‧Upper inclined wall
3‧‧‧垂直壁3‧‧‧ vertical wall
4a‧‧‧支柱4a‧‧‧ pillar
4b‧‧‧托架4b‧‧‧ bracket
6‧‧‧第1反射板6‧‧‧1st reflector
7‧‧‧間隔件7‧‧‧ spacers
8‧‧‧螺軸8‧‧‧ screw shaft
9‧‧‧架台9‧‧‧Rack
11‧‧‧旋轉台11‧‧‧Rotating table
12‧‧‧底部12‧‧‧ bottom
13‧‧‧臂部13‧‧‧ Arms
14‧‧‧支撐銷14‧‧‧Support pins
15‧‧‧卡合銷15‧‧‧ card sales
16‧‧‧連接筒體16‧‧‧Connecting cylinder
17‧‧‧控制馬達17‧‧‧Control motor
18‧‧‧定子18‧‧‧ Stator
19‧‧‧轉子19‧‧‧Rotor
21‧‧‧內蓋體21‧‧‧ inner cover
22‧‧‧環部22‧‧‧ Ring Department
23‧‧‧周壁23‧‧‧Weibi
24‧‧‧上部傾斜壁24‧‧‧Upper inclined wall
25‧‧‧第2反射板25‧‧‧2nd reflector
26‧‧‧連接片26‧‧‧Connecting piece
27‧‧‧上下驅動機構27‧‧‧Up and down drive mechanism
28‧‧‧滑軸28‧‧‧Sliding shaft
29‧‧‧軸承29‧‧‧ Bearing
30‧‧‧伸縮囊30‧‧‧ telescopic bladder
31‧‧‧滑件31‧‧‧Sliding parts
32‧‧‧線性滑軸32‧‧‧Linear sliding shaft
33‧‧‧連接構件33‧‧‧Connecting members
34‧‧‧氣缸34‧‧‧ cylinder
35‧‧‧桿部35‧‧‧ pole
37‧‧‧導環37‧‧‧Guide ring
37a‧‧‧傾斜部37a‧‧‧ inclined section
38‧‧‧第1排出管38‧‧‧1st discharge pipe
39‧‧‧第2排出管39‧‧‧2nd discharge pipe
40‧‧‧遮蔽壁40‧‧‧ Shielded wall
41‧‧‧傾斜壁41‧‧‧ sloping wall
42‧‧‧蓋構件42‧‧‧Cover components
43‧‧‧密封構件43‧‧‧ Sealing members
44‧‧‧第1噴嘴體44‧‧‧1st nozzle body
45‧‧‧第2噴嘴體45‧‧‧2nd nozzle body
47‧‧‧遮蔽板47‧‧‧shading board
51‧‧‧第3排出管51‧‧‧3rd discharge pipe
52‧‧‧氣液分離裝置52‧‧‧Gas-liquid separation device
53‧‧‧排氣管53‧‧‧Exhaust pipe
54‧‧‧排液管54‧‧‧Draining tube
W‧‧‧基板W‧‧‧Substrate
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| JP2005202028 | 2005-07-11 | ||
| JP2006176729A JP4796902B2 (en) | 2005-07-11 | 2006-06-27 | Substrate spin processing equipment |
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| TWI405623B true TWI405623B (en) | 2013-08-21 |
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| KR (1) | KR101231749B1 (en) |
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| KR100890615B1 (en) * | 2007-10-08 | 2009-03-27 | 세메스 주식회사 | Substrate cleaning apparatus and cleaning method thereof |
| KR101055601B1 (en) * | 2011-01-25 | 2011-08-09 | 주식회사 쓰리디플러스 | Spin chuck for manufacturing substrate |
| KR101807322B1 (en) | 2011-09-02 | 2017-12-08 | 도오꾜오까고오교 가부시끼가이샤 | Substrate treating device |
| JP6077769B2 (en) * | 2011-09-02 | 2017-02-08 | 東京応化工業株式会社 | Substrate processing equipment |
| KR102223763B1 (en) * | 2013-12-27 | 2021-03-05 | 세메스 주식회사 | Apparatus and Method for treating substrate |
| KR101776017B1 (en) * | 2015-10-27 | 2017-09-07 | 세메스 주식회사 | Dissolved ozone removal unit and Apparatus for treating a substrate including the unit, Method for removing a dissolved ozone, Method for cleaning a substrate |
| JP6784546B2 (en) * | 2016-09-08 | 2020-11-11 | 株式会社Ｓｃｒｅｅｎホールディングス | Board processing equipment |
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| TW200702075A (en) | 2007-01-16 |
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