TWI401487B - Structure and method for reparing defets of circuit pattern - Google Patents
Structure and method for reparing defets of circuit pattern Download PDFInfo
- Publication number
- TWI401487B TWI401487B TW96111254A TW96111254A TWI401487B TW I401487 B TWI401487 B TW I401487B TW 96111254 A TW96111254 A TW 96111254A TW 96111254 A TW96111254 A TW 96111254A TW I401487 B TWI401487 B TW I401487B
- Authority
- TW
- Taiwan
- Prior art keywords
- defect
- layer
- repairing
- material layer
- electromagnetic wave
- Prior art date
Links
Description
本發明係有關一種修補結構以及方法，尤其是指一種利用具有複數層之結構，以修補具有缺陷之電路以及利用具有複數層結構之修補基材接受電磁波光源照射後產生的碰撞壓力，使材料轉移至欲修補之區域中之一種缺陷修補結構及缺陷修補方法。The present invention relates to a repair structure and method, and more particularly to a structure using a plurality of layers to repair a defective circuit and a collision pressure generated by using a repaired substrate having a plurality of layers to receive an electromagnetic wave source, thereby transferring the material. A defect repair structure and defect repair method in the area to be repaired.
平面顯示器(Flat Panel DiSplay,FPD)已是國內最重要的產業之一，隨著大尺寸液晶顯示器面板的發展量產到七代廠，面板尺寸的大型化及產能需求不斷提高的趨勢及市場需求下，使得現有的修補製程面臨極大的瓶頸。如圖一所示，平面顯示器的前段製程主要為利用光阻蝕刻技術進行線路圖案成型，而在此製程中因污染及本身的蝕刻誤差，導致製程完成後於線路圖案中產生開路缺陷(open defect)10以及線缺陷(line defect)11，這些缺陷是不被允許的，因此必須加以修補(repair)。Flat Panel DiSplay (FPD) is one of the most important industries in China. With the development of large-size LCD panel production to the seven-generation plant, the size of the panel and the increasing demand for production capacity and market demand Under the existing, the existing repair process faces a huge bottleneck. As shown in Fig. 1, the front-end process of the flat panel display mainly uses the photoresist etching technology to form the line pattern, and in the process, the open defect is generated in the line pattern after the process is completed due to contamination and its own etching error. ) 10 and line defect 11, these defects are not allowed, so they must be repaired.
傳統進行修補的主要方式為雷射化學氣相沉積(Laser Chemical Vapor Deposition，Laser CVD)，而此修補製程主要是將檢測後的面板離線送至需特殊氣氛環境的Laser CVD設備中，再利用雷射光與特殊氣體的光化學反應，使修補的線路材料沉積於具有缺陷的線路上而完成修補製程。因為需要離線進行修補處理及製程需要於特殊氣氛環境下進行，導致使用Laser CVD進行修補製程的產能較低。The main method of repairing is Laser Chemical Vapor Deposition (Laser CVD), and the repair process is mainly to take the tested panel offline to the Laser CVD equipment in a special atmosphere environment, and then use the mine. The photochemical reaction of the illuminating light with the special gas causes the repaired circuit material to be deposited on the defective line to complete the repair process. Because the need for off-line repair processing and process needs to be carried out in a special atmosphere, the productivity of the repair process using Laser CVD is low.
另外，習用技術中如日本公開專利JP.NO.2000031013號所揭露的一種線路圖案修補裝置與方法，其係利用雷射將修補材料轉移至具有缺陷的線路圖案上，以回復線路圖案之電性。在該技術中，修補的線路材料受雷射光照射後，修補材料容易受到雷射光之能量而產生熱影響區之現象，因此會有材料氧化及破壞的問題，造成導電性與黏著性不佳。In addition, a circuit pattern repairing apparatus and method disclosed in Japanese Laid-Open Patent Publication No. 2000031013, which uses a laser to transfer a repairing material to a defective line pattern to restore the electrical properties of the line pattern. . In this technique, after the repaired line material is irradiated with laser light, the repair material is susceptible to the energy of the laser light to generate a heat-affected zone, and thus there is a problem of oxidation and destruction of the material, resulting in poor conductivity and adhesion.
本發明提供一種缺陷修補結構，其係具有複數層之結構可以使具有缺陷之線路回復電性。The present invention provides a defect repair structure having a structure of a plurality of layers to restore electrical reliability to a defective line.
本發明提供一種缺陷修補方法，其係利用具有複數層結構之修補基材接受電磁波光源照射後產生的碰撞壓力，即直接來自光子撞擊所產生的光壓，輔以電磁波能量產生打斷分子鍵結或***現象，使材料轉移至欲修補之區域中，該複數層結構除了具有修補缺陷之材料外，更具有粘著材料以提高修補缺陷的材料附著於缺陷線路區域上。The invention provides a defect repairing method, which is to use a repairing substrate having a plurality of layers to receive a collision pressure generated by an electromagnetic wave source, that is, a light pressure directly generated by photon impact, and an electromagnetic wave energy to generate an interrupted molecular bond. Or an explosion phenomenon, the material is transferred to the area to be repaired. In addition to the material with the repair defect, the multi-layer structure has an adhesive material to improve the material of the repair defect and adhere to the defect line area.
本發明提供一種缺陷修補方法，其係利用具有複數層結構之修補基材接受電磁波光源照射後產生的碰撞壓力，使材料轉移至欲修補之區域中，該複數層結構除了具有修補缺陷之材料外，更具有可以吸收電磁能量之中介層使得修補材料不會直接受到雷射熱源的影響以維持導電特性。The present invention provides a defect repairing method, which utilizes a collision pressure generated by a repair substrate having a plurality of layers of structures after being irradiated by an electromagnetic wave source to transfer a material to a region to be repaired, the plurality of layers having a material other than a defect. It also has an interposer that can absorb electromagnetic energy so that the repair material is not directly affected by the laser heat source to maintain the conductive properties.
本發明提供一種缺陷修補方法，其係利用具有複數層結構之修補基材接受電磁波光源照射後產生的碰撞壓力，使材料轉移至欲修補之區域中。該方法係可在承載板與修補缺陷的材料之間形成一緩衝層，以使得修補材料不會直接受到電磁波光束在轉移過程中產生之熱源的影響，以維持轉移材料之導電特性，並可使轉移材料容易脫離緩衝層而轉移至缺陷線路上。The present invention provides a defect repairing method in which a collision pressure generated by an electromagnetic wave source is irradiated by a repair substrate having a plurality of layers, and the material is transferred to a region to be repaired. The method can form a buffer layer between the carrier plate and the material for repairing defects, so that the repairing material is not directly affected by the heat source generated by the electromagnetic wave beam during the transfer process, so as to maintain the conductive property of the transfer material, and The transfer material is easily removed from the buffer layer and transferred to the defective line.
在一實施例中，本發明提供一種缺陷修補結構，包括：一導電黏著層；以及一修補材料層，其係形成於該導電黏著層上。In one embodiment, the present invention provides a defect repair structure comprising: a conductive adhesive layer; and a repair material layer formed on the conductive adhesive layer.
在一實施例中，本發明提供一種缺陷修補結構，包括：一修補材料層；以及一中介層，其係形成於該修補材料層上。In one embodiment, the present invention provides a defect repair structure comprising: a repair material layer; and an interposer formed on the repair material layer.
在一實施例中，本發明提供一種缺陷修補結構，包括：一導電黏著層；一修補材料層，其係形成於該導電黏著層上；以及一中介層，其係形成於該修補材料層上。在一實施例中，本發明提供一種缺陷修補方法，其係包括有下列步驟：提供一具有一缺陷之基板；提供一承載板，該承載板上形成有一修補材料層；使該修補材料層對應該缺陷；以及利用一電磁波光源提供之光束照射於該承載板上，使該修補材料轉移至該缺陷上。In one embodiment, the present invention provides a defect repair structure comprising: a conductive adhesive layer; a repair material layer formed on the conductive adhesive layer; and an interposer formed on the repair material layer . In one embodiment, the present invention provides a defect repairing method comprising the steps of: providing a substrate having a defect; providing a carrier plate on which a repair material layer is formed; It should be defective; and a light beam provided by an electromagnetic wave source is irradiated onto the carrier plate to transfer the repair material to the defect.
在一實施例中，本發明提供一種缺陷修補方法，其係包括有下列步驟：提供一具有一缺陷之基板；提供一承載板，該承載板上形成有一轉移材料層，該轉移材料層上具有一修補材料層，其係形成於該承載板上以及一導電黏著層，其係形成於該修補材料層上；使該轉移材料層對應該缺陷；以及利用一電磁波光源提供之光束照射於該承載板上，使該轉移材料層轉移至該缺陷上，其中該修補材料層以及該導電黏著層係同時轉移至該缺陷上。In one embodiment, the present invention provides a defect repairing method comprising the steps of: providing a substrate having a defect; providing a carrier plate on which a transfer material layer is formed, the transfer material layer having a repair material layer formed on the carrier plate and a conductive adhesive layer formed on the repair material layer; the transfer material layer corresponding to the defect; and a light beam provided by an electromagnetic wave source is irradiated to the load The transfer material layer is transferred onto the defect, wherein the repair material layer and the conductive adhesive layer are simultaneously transferred to the defect.
在一實施例中，本發明更提供一種缺陷修補方法，其係包括有下列步驟：提供一具有一缺陷之基板；提供一承載板，該承載板上形成有一轉移材料層，該轉移材料層上具有一中介層，其係形成於該承載板上以及一修補材料層，其係形成於該中介層上；使該轉移材料層對應該缺陷；以及利用一電磁波光源提供之光束照射於該承載板上，使該轉移材料層轉移至該缺陷上，其中該修補材料層以及該中介層係同時轉移至該缺陷上。In an embodiment, the present invention further provides a defect repairing method comprising the steps of: providing a substrate having a defect; providing a carrier plate on which a transfer material layer is formed on the transfer material layer Having an interposer formed on the carrier plate and a repair material layer formed on the interposer; the transfer material layer is corresponding to the defect; and the beam provided by the electromagnetic wave source is irradiated to the carrier plate The transfer material layer is transferred onto the defect, wherein the repair material layer and the interposer are simultaneously transferred to the defect.
在一實施例中，本發明更提供一種缺陷修補方法，其係包括有下列步驟：提供一具有一缺陷之基板；提供一承載板，該承載板上形成有一緩衝層以及一轉移材料層，其係形成於該緩衝層上；使該轉移材料層對應該缺陷；以及利用一電磁波光源提供之光束照射於該承載板上，使該轉移材料層轉移至該缺陷上。In an embodiment, the present invention further provides a defect repairing method comprising the steps of: providing a substrate having a defect; providing a carrier plate having a buffer layer and a transfer material layer formed thereon Formed on the buffer layer; the transfer material layer is corresponding to the defect; and a light beam provided by an electromagnetic wave source is irradiated onto the carrier plate to transfer the transfer material layer to the defect.
為使 貴審查委員能對本發明之特徵、目的及功能有更進一步的認知與瞭解，下文特將本發明之裝置的相關細部結構以及設計的理念原由進行說明，以使得 審查委員可以了解本發明之特點，詳細說明陳述如下：請參閱圖二A所示，該圖係為本發明之缺陷修補結構第一實施例示意圖。缺陷修補結構2a具有一導電黏著層23，而在該導電黏著層23上形成有一修補材料層22。該導電黏著層23之材料特性為具有導電性以及黏著性，使得該修補材料層22可以容易附著於該缺陷線路21上。該導電黏著層23在本實施例中係為銀膠。該修補材料層22係為一金屬材料層，該金屬材料可選擇鎢、金、銀、銅、銀膠或者是鉬等類之材料，但不在此限。In order to enable the reviewing committee to have a further understanding and understanding of the features, objects and functions of the present invention, the related detailed structure of the device of the present invention and the concept of the design are explained below so that the reviewing committee can understand the present invention. The detailed description is as follows: Please refer to FIG. 2A, which is a schematic diagram of the first embodiment of the defect repairing structure of the present invention. The defect repairing structure 2a has a conductive adhesive layer 23, and a repair material layer 22 is formed on the conductive adhesive layer 23. The material property of the conductive adhesive layer 23 is electrically conductive and adhesive, so that the repairing material layer 22 can be easily attached to the defective line 21. The conductive adhesive layer 23 is a silver paste in this embodiment. The repairing material layer 22 is a metal material layer, and the metal material may be selected from the group consisting of tungsten, gold, silver, copper, silver glue or molybdenum, but not limited thereto.
請參閱圖二B所示，該圖係為本發明之缺陷修補結構第二實施例示意圖。該缺陷修補結構2b具有一修補材料層22，而在該修補材料層22上形成有一中介層24。該中介層24之材料特性為具有能量吸收之功能，以保護修補材料層22在受電磁波光源之照射而轉移到缺陷線路時，不受電磁波照射而產生熱影響區。該電磁波光源係可選擇為一全波段雷射光源以及紫外光波雷射其中之一。使得該修補材料層22可以維持其導電特性，以及避免因受熱而氧化。該中介層24之材料係為鈦，但不以此為限。該修補材料層22係為一金屬材料層，該金屬材料可選擇鎢、金、銀、銅、銀膠或者是鉬材料，但不在此限。Please refer to FIG. 2B, which is a schematic view of a second embodiment of the defect repairing structure of the present invention. The defect repairing structure 2b has a repairing material layer 22 on which an interposer 24 is formed. The material property of the interposer 24 is a function of energy absorption to protect the repair material layer 22 from being irradiated by the electromagnetic wave source to the defect line, and is not irradiated with electromagnetic waves to generate a heat-affected zone. The electromagnetic wave source can be selected as one of a full-band laser light source and an ultraviolet light laser. The repair material layer 22 is allowed to maintain its conductive properties and to avoid oxidation by heat. The material of the interposer 24 is titanium, but is not limited thereto. The repair material layer 22 is a metal material layer, which may be selected from tungsten, gold, silver, copper, silver glue or molybdenum material, but is not limited thereto.
請參閱圖二C所示，該圖係為本發明之缺陷修補結構第三實施例示意圖。該缺陷修補結構2c係為結合前述之第一實施例以及第二實施例，亦即在該修補材料層22下方具有一導電黏著層23。另外在該修補材料層22之上具有一中介層24。該修補材料層22、導電黏著層23以及該中介層24之材料選擇以及功效如前所述，在此不作贅述。Please refer to FIG. 2C, which is a schematic view of a third embodiment of the defect repairing structure of the present invention. The defect repairing structure 2c is combined with the first embodiment and the second embodiment described above, that is, having a conductive adhesive layer 23 under the repairing material layer 22. Additionally, an intervening layer 24 is provided over the layer of repair material 22. The material selection and efficacy of the repairing material layer 22, the conductive adhesive layer 23, and the interposer 24 are as described above, and are not described herein.
請參閱圖三A至圖三C所示，該圖係為本發明之缺陷修補方法第一實施例示意圖。本實施例之修補方法，係為形成修補結構以修補缺陷線路之方法。首先如圖三A所示，提供一具有缺陷線路21之基板20。該缺陷線路21係可為線缺陷或者是開路缺陷，在本實施例係以開路缺陷作說明。該基板20可是玻璃基板或者是矽基板，該線路圖案在本實施例中係為應用於平面顯示器之線路圖案，但不在此限。Please refer to FIG. 3A to FIG. 3C, which are schematic diagrams of the first embodiment of the defect repairing method of the present invention. The repairing method of this embodiment is a method of forming a repairing structure to repair a defective line. First, as shown in FIG. 3A, a substrate 20 having a defective line 21 is provided. The defective line 21 may be a line defect or an open line defect, and is described as an open defect in this embodiment. The substrate 20 may be a glass substrate or a germanium substrate. The circuit pattern is a line pattern applied to a flat display in this embodiment, but is not limited thereto.
接著如圖三B所示，提供一承載板4，該承載板4上形成有一修補材料層22，其係在轉移前與缺陷線路21保持一適當間隙。該修補材料層22之材料係為金屬材料，例如：鎢、金、銀、銅、銀膠或者是鉬材料，但不在此限。該承載板4之一側具有一電磁波光源3。該電磁波光源3係可選擇為一全波段雷射光源或者是紫外光波雷射。然後，使該修補材料層22對應該缺陷線路21之位置。最後，如圖三C所示，再利用該電磁波光源3提供之電磁波光束90照射於該承載板4上，使該修補材料22轉移至該缺陷線路21上。由於該修補材料22接受電磁波光源照射後產生的碰撞壓力，亦即，直接來自光子撞擊所產生的光壓，輔以雷射能量產生打斷分子鍵結或***現象，使修補材料22轉移至欲修補之缺陷線路21上。Next, as shown in Fig. 3B, a carrier plate 4 is provided, on which a layer of repair material 22 is formed which maintains a suitable gap with the defect line 21 prior to transfer. The material of the repairing material layer 22 is a metal material such as tungsten, gold, silver, copper, silver paste or molybdenum material, but is not limited thereto. One side of the carrier plate 4 has an electromagnetic wave source 3. The electromagnetic wave source 3 can be selected as a full-band laser source or an ultraviolet laser. Then, the repair material layer 22 is made to correspond to the position of the defective line 21. Finally, as shown in FIG. 3C, the electromagnetic wave beam 90 supplied from the electromagnetic wave source 3 is irradiated onto the carrier plate 4, and the repairing material 22 is transferred to the defect line 21. Because the repairing material 22 receives the collision pressure generated by the electromagnetic wave source, that is, directly from the light pressure generated by the photon impact, supplemented by the laser energy to break the molecular bond or the explosion phenomenon, so that the repair material 22 is transferred to the desired Repair the defect line 21.
請參閱圖三D至圖三E所示，該圖係為本發明之缺陷修補方法第二實施例示意圖。如圖三D所示，在本實施例中，該修補材料層22與該承載板4之間更形成有一緩衝層25。然後使該修補材料層22對應缺陷線路21。如圖三E所示，再利用該電磁波光源3提供之電磁波光束90照射於該承載板4上，使該修補材料層22轉移至該缺陷線路21上。在轉移過程中，緩衝層25不轉移至缺陷線路21上，該緩衝層25之目的在於吸收電磁波光源之能量並傳導部分之電磁波能量給該修補材料層22。如此一來，一方面可以避免該修補材料層22因受熱而氧化，進而影響導電之特性；另一方面也可以藉由該緩衝層25與修補材料層22之間的低黏著性，以使得修補材料層22容易從緩衝層25轉移至該缺陷線路21上。該緩衝層25係可選擇為高分子材料，在本實施例中，該高分子材料係選擇為聚二甲基矽氧烷(Polydimethylsiloxane,PDMS)，但不在此限。Please refer to FIG. 3D to FIG. 3E, which is a schematic diagram of a second embodiment of the defect repairing method of the present invention. As shown in FIG. 3D, in the embodiment, a buffer layer 25 is further formed between the repairing material layer 22 and the carrier plate 4. The repair material layer 22 is then made to correspond to the defect line 21. As shown in FIG. 3E, the electromagnetic wave beam 90 supplied from the electromagnetic wave source 3 is irradiated onto the carrier plate 4, and the repair material layer 22 is transferred to the defect line 21. During the transfer process, the buffer layer 25 is not transferred to the defect line 21, and the purpose of the buffer layer 25 is to absorb the energy of the electromagnetic wave source and conduct a portion of the electromagnetic wave energy to the repair material layer 22. In this way, on the one hand, the repairing material layer 22 can be prevented from being oxidized by heat, thereby affecting the characteristics of the conductive property; on the other hand, the low adhesion between the buffer layer 25 and the repairing material layer 22 can also be used to repair The material layer 22 is easily transferred from the buffer layer 25 to the defect line 21. The buffer layer 25 may be selected from a polymer material. In the present embodiment, the polymer material is selected from the group consisting of polydimethylsiloxane (PDMS), but is not limited thereto.
請參閱圖四A至圖四C所示，該圖係為本發明之缺陷修補方法第三實施例示意圖。在本實施例中，係製作如圖二A所述之缺陷修補結構2a。首先如圖四A所示，提供一具有缺陷線路21之基板20。然後如圖四B所示，提供一承載板4，該承載板4上形成有一轉移材料層26，，其係在轉移前與缺陷線路21保持一適當間隙，該轉移材料層26具有一修補材料層22以及一導電黏著層23。該修補材料層22係形成於該承載板4上，而該導電黏著層23則形成於該修補材料層22上。至於形成該轉移材料層26之方法，係可利用習用之技術來製作，這是熟悉此項技術之人所熟悉的，在此不作贅述。Please refer to FIG. 4A to FIG. 4C, which are schematic diagrams of a third embodiment of the defect repairing method of the present invention. In the present embodiment, the defect repairing structure 2a as shown in Fig. 2A is produced. First, as shown in FIG. 4A, a substrate 20 having a defective line 21 is provided. Then, as shown in FIG. 4B, a carrier plate 4 is formed. The carrier plate 4 is formed with a transfer material layer 26 which is maintained at a proper gap with the defect line 21 before transfer, and the transfer material layer 26 has a repair material. Layer 22 and a conductive adhesive layer 23. The repairing material layer 22 is formed on the carrier sheet 4, and the conductive adhesive layer 23 is formed on the repairing material layer 22. The method of forming the transfer material layer 26 can be made using conventional techniques, which are familiar to those skilled in the art and will not be described herein.
該修補材料層22之材料係為金屬材料，例如：鎢、金、銀、銅、銀膠或者是鉬材料，但不在此限。該承載板4之一側具有一電磁波光源3。該電磁波光源3係可選擇為一全波段雷射光源或者是紫外光波雷射。然後，使該轉移材料層26對應該缺陷線路21之位置。最後，如圖四C所示，再利用該電磁波光源3提供之電磁波光束90照射於該承載板4上，使該轉移材料層26(包括22以及23)同時轉移至該缺陷線路21上。該導電黏著層23之材料係可選擇同時具有導電性以及黏著性之材料，在本實施例中係使用銀膠，但不在此限。The material of the repairing material layer 22 is a metal material such as tungsten, gold, silver, copper, silver paste or molybdenum material, but is not limited thereto. One side of the carrier plate 4 has an electromagnetic wave source 3. The electromagnetic wave source 3 can be selected as a full-band laser source or an ultraviolet laser. The transfer material layer 26 is then brought to the location of the defect line 21. Finally, as shown in FIG. 4C, the electromagnetic wave beam 90 provided by the electromagnetic wave source 3 is irradiated onto the carrier plate 4, and the transfer material layer 26 (including 22 and 23) is simultaneously transferred to the defect line 21. The material of the conductive adhesive layer 23 is selected from materials having both conductivity and adhesion. In the present embodiment, silver paste is used, but not limited thereto.
請參閱圖四D至圖四E所示，該圖係為本發明之缺陷修補方法第四實施例示意圖。如圖四D所示，在本實施例中，該修補材料層22與該承載板4之間更形成有一層緩衝層25。然後使該轉移材料層26對應缺陷線路21。如圖四E所示，再利用該電磁波光源3提供之電磁波光束90照射於該承載板4上，使該轉移材料層26(包括22以及23)同時轉移至該缺陷線路21上。該緩衝層25之目的以及材料選擇如前所述，在此不作贅述。Please refer to FIG. 4D to FIG. 4E, which is a schematic diagram of a fourth embodiment of the defect repairing method of the present invention. As shown in FIG. 4D, in the embodiment, a buffer layer 25 is further formed between the repairing material layer 22 and the carrier plate 4. The transfer material layer 26 is then made to correspond to the defect line 21. As shown in Fig. 4E, the electromagnetic wave beam 90 supplied from the electromagnetic wave source 3 is irradiated onto the carrier plate 4, and the transfer material layer 26 (including 22 and 23) is simultaneously transferred to the defect line 21. The purpose and material selection of the buffer layer 25 are as described above and will not be described herein.
請參閱圖五A至圖五C所示，該圖係為本發明之缺陷修補方法第五實施例示意圖。在本實施例中，係為形成如圖二B之缺陷修補結構2b之方法。首先如圖五A所示，提供一具有缺陷線路21之基板20。然後如圖五B所示，提供一承載板4，該承載板4上形成有一轉移材料層27，其係在轉移前與缺陷線路21保持一適當間隙，該轉移材料層27具有一修補材料層22以及一中介層24。該中介層24係形成於該承載板4上，而該修補材料層22則形成於該中介層24上。至於形成該轉移材料層27之方法，係可利用習用之技術來製作，這是熟悉此項技術之人所熟悉的，在此不作贅述。Referring to FIG. 5A to FIG. 5C, the figure is a schematic diagram of a fifth embodiment of the defect repairing method of the present invention. In the present embodiment, the method of forming the defect repairing structure 2b as shown in Fig. 2B is used. First, as shown in FIG. 5A, a substrate 20 having a defective line 21 is provided. Then, as shown in FIG. 5B, a carrier plate 4 is formed. The carrier plate 4 is formed with a layer of transfer material 27 which is maintained at a proper gap with the defect line 21 prior to transfer. The layer of transfer material 27 has a layer of repair material. 22 and an interposer 24. The interposer 24 is formed on the carrier plate 4, and the repairing material layer 22 is formed on the interposer 24. The method of forming the layer 27 of the transfer material can be made using conventional techniques, which are familiar to those skilled in the art and will not be described herein.
該承載板4之一側具有一電磁波光源3。該電磁波光源3係可選擇為一全波段雷射光源或者是紫外光波雷射。然後，使該轉移材料層27對應該缺陷線路21之位置。最後，如圖五C所示，再利用該電磁波光源3提供之電磁波光束90照射於該承載板4上，使該轉移材料層27(包括22以及24)同時轉移至該缺陷線路21上。該中介層24係為可吸收電磁波能量之材料，以保護該修補材料層22免於直接受到該電磁波光源之影響而產生熱影響區，以避免該修補材料層因受熱而氧化，進而影響導電之特性。該修補材料層22之材料係為金屬材料，例如：鎢、金、銀、銅、銀膠或者是鉬材料，但不在此限。該中介層24之材料係為鈦，但不以此為限。One side of the carrier plate 4 has an electromagnetic wave source 3. The electromagnetic wave source 3 can be selected as a full-band laser source or an ultraviolet laser. Then, the transfer material layer 27 is made to correspond to the position of the defective line 21. Finally, as shown in FIG. 5C, the electromagnetic wave beam 90 supplied from the electromagnetic wave source 3 is irradiated onto the carrier plate 4, and the transfer material layer 27 (including 22 and 24) is simultaneously transferred to the defect line 21. The interposer 24 is a material that can absorb electromagnetic wave energy to protect the repairing material layer 22 from being directly affected by the electromagnetic wave source to generate a heat-affected zone, so as to prevent the repairing material layer from being oxidized by heat, thereby affecting the conductive property. characteristic. The material of the repairing material layer 22 is a metal material such as tungsten, gold, silver, copper, silver paste or molybdenum material, but is not limited thereto. The material of the interposer 24 is titanium, but is not limited thereto.
請參閱圖五D至圖五E所示，該圖係為本發明之缺陷修補方法第六實施例示意圖。如圖五D所示，在本實施例中，該中介層24與該承載板4之間更形成有一層緩衝層25。然後使該轉移材料層27對應缺陷線路21。如圖五E所示，再利用該電磁波光源3提供之電磁波光束90照射於該承載板4上，使該轉移材料層27(包括22以及24)同時轉移至該缺陷線路21上。該緩衝層25之目的以及材料選擇如前所述，在此不作贅述。Referring to FIG. 5D to FIG. 5E, the figure is a schematic diagram of a sixth embodiment of the defect repairing method of the present invention. As shown in FIG. 5D, in the embodiment, a buffer layer 25 is further formed between the interposer 24 and the carrier board 4. The transfer material layer 27 is then made to correspond to the defect line 21. As shown in Fig. 5E, the electromagnetic wave beam 90 supplied from the electromagnetic wave source 3 is irradiated onto the carrier plate 4, and the transfer material layer 27 (including 22 and 24) is simultaneously transferred to the defect line 21. The purpose and material selection of the buffer layer 25 are as described above and will not be described herein.
請參閱圖五F至圖五G所示，該圖係為本發明之缺陷修補方法第七實施例示意圖。在本實施例中，係為製作如圖二C之缺陷修補結構2c之方法。首先如圖五F所示，提供一承載板4，該承載板4上形成有一轉移材料層28，該轉移材料層28具有一修補材料層22、一導電黏著層23以及一中介層24。該中介層24係形成於該承載板4上，而該修補材料層22則形成於該中介層24上，該導電黏著層23則形成於該修補材料層22上。至於形成該轉移材料層28之方法，係可利用習用之技術來製作，這是熟悉此項技術之人所熟悉的，在此不作贅述。Referring to FIG. 5F to FIG. 5G, the figure is a schematic diagram of a seventh embodiment of the defect repairing method of the present invention. In the present embodiment, the method of fabricating the defect repair structure 2c as shown in Fig. 2C is used. First, as shown in FIG. 5F, a carrier plate 4 is formed. The carrier plate 4 is formed with a transfer material layer 28 having a repair material layer 22, a conductive adhesive layer 23 and an interposer 24. The interposer 24 is formed on the carrier plate 4, and the repairing material layer 22 is formed on the interposer 24. The conductive adhesive layer 23 is formed on the repairing material layer 22. The method of forming the layer 28 of the transfer material can be made using conventional techniques, which are familiar to those skilled in the art and will not be described herein.
該承載板4之一側具有一電磁波光源3。該電磁波光源3係可選擇為一全波段雷射光源或者是紫外光波雷射。然後，使該轉移材料層28對應該缺陷線路21之位置。最後，如圖五G所示，再利用該電磁波光源3提供之電磁波光束90照射於該承載板4上，使該轉移材料層28(包括22、23以及24)同時轉移至該缺陷線路21上。該修補材料層22、導電黏著層23以及中介層24之功效以及目的如前所述，在此不作贅述。One side of the carrier plate 4 has an electromagnetic wave source 3. The electromagnetic wave source 3 can be selected as a full-band laser source or an ultraviolet laser. The transfer material layer 28 is then brought to the location of the defect line 21. Finally, as shown in FIG. 5G, the electromagnetic wave beam 90 provided by the electromagnetic wave source 3 is irradiated onto the carrier plate 4, and the transfer material layer 28 (including 22, 23 and 24) is simultaneously transferred to the defect line 21. . The functions and purposes of the repairing material layer 22, the conductive adhesive layer 23, and the interposer 24 are as described above, and are not described herein.
請參閱圖五H至圖五I係為本發明之缺陷修補方法第八實施例示意圖。如圖五H所示，在本實施例中，該中介層24與該承載板4之間更形成有一層緩衝層25。然後使該轉移材料層28對應缺陷線路21。如圖五I所示，再利用該電磁波光源3提供之電磁波光束90照射於該承載板4上，使該轉移材料層28(包括22、23以及24)同時轉移至該缺陷線路21上。該緩衝層25之目的以及材料選擇如前所述，在此不作贅述。Please refer to FIG. 5H to FIG. 5I as schematic diagrams of the eighth embodiment of the defect repairing method of the present invention. As shown in FIG. 5H, in the embodiment, a buffer layer 25 is further formed between the interposer 24 and the carrier board 4. The transfer material layer 28 is then made to correspond to the defect line 21. As shown in Fig. 5I, the electromagnetic wave beam 90 supplied from the electromagnetic wave source 3 is irradiated onto the carrier plate 4, and the transfer material layer 28 (including 22, 23 and 24) is simultaneously transferred to the defect line 21. The purpose and material selection of the buffer layer 25 are as described above and will not be described herein.
請參閱圖六所示，本實施例係將本發明之第八實施例中之電磁波光源3以及承載板4之間設置一光罩結構5，以對不同之缺陷線路圖案進行修補，增加可修補缺陷線路之多樣性。雖然在本實施例中係將光罩結構5與本發明之第八實施例結合，但實際上應用時，該光罩結構5可與本發明所提供之其他實施例相互結合應用。Referring to FIG. 6, in this embodiment, a reticle structure 5 is disposed between the electromagnetic wave source 3 and the carrier plate 4 in the eighth embodiment of the present invention to repair different defective circuit patterns and increase repairability. The diversity of defective lines. Although the reticle structure 5 is combined with the eighth embodiment of the present invention in this embodiment, in practice, the reticle structure 5 can be used in combination with other embodiments provided by the present invention.
惟以上所述者，僅為本發明之較佳實施例，當不能以之限制本發明範圍。即大凡依本發明申請專利範圍所做之均等變化及修飾，仍將不失本發明之要義所在，亦不脫離本發明之精神和範圍，故都應視為本發明的進一步實施狀況。However, the above is only a preferred embodiment of the present invention, and the scope of the present invention is not limited thereto. It is to be understood that the scope of the present invention is not limited by the spirit and scope of the present invention, and should be considered as a further embodiment of the present invention.
綜合上述，本發明提供之缺陷修補結構及缺陷修補方法，其係利用多層之修補結構，以有效解決修補材料易氧化及應力破壞的問題以維持修補材料導電特性，另外也可以增加修補材料與缺陷線路之附著性，因此可以滿足業界之需求，進而提高該產業之競爭力以及帶動週遭產業之發展，誠已符合發明專利法所規定申請發明所需具備之要件，故爰依法呈提發明專利之申請，謹請 貴審查委員允撥時間惠予審視，並賜准專利為禱。In summary, the defect repairing structure and the defect repairing method provided by the present invention utilize a multi-layer repairing structure to effectively solve the problem of easy oxidation and stress damage of the repairing material to maintain the conductive property of the repairing material, and also to increase the repairing material and defects. The adhesion of the line can meet the needs of the industry, thereby improving the competitiveness of the industry and promoting the development of the surrounding industry. Cheng has already met the requirements for applying for inventions as stipulated by the invention patent law. To apply, please ask your review board to allow time for review and grant the patent as a prayer.
1．．．線路圖案1. . . Line pattern
10、11．．．缺陷10, 11. . . defect
2a、2b、2c．．．缺陷修補結構2a, 2b, 2c. . . Defect repair structure
20．．．基板20. . . Substrate
21．．．缺陷線路twenty one. . . Defective line
22．．．修補材料層twenty two. . . Repair material layer
23．．．導電黏著層twenty three. . . Conductive adhesive layer
24．．．中介層twenty four. . . Intermediary layer
25．．．緩衝層25. . . The buffer layer
26、27、28．．．轉移材料層26, 27, 28. . . Transfer material layer
3．．．電磁波光源3. . . Electromagnetic wave source
4．．．承載板4. . . Carrier board
5．．．光罩結構5. . . Photomask structure
90．．．電磁波光束90. . . Electromagnetic wave beam
圖一係為線路圖案之缺陷示意圖。Figure 1 is a schematic diagram of the defect of the line pattern.
圖二A係為本發明之缺陷修補結構第一實施例示意圖。Figure 2A is a schematic view showing a first embodiment of the defect repairing structure of the present invention.
圖二B係為本發明之缺陷修補結構第二實施例示意圖。2B is a schematic view showing a second embodiment of the defect repairing structure of the present invention.
圖二C係為本發明之缺陷修補結構第三實施例示意圖。Figure 2C is a schematic view showing a third embodiment of the defect repairing structure of the present invention.
圖三A至圖三C係為本發明之缺陷修補方法第一實施例示意圖。FIG. 3A to FIG. 3C are schematic diagrams showing the first embodiment of the defect repairing method of the present invention.
圖三D至圖三E係為本發明之缺陷修補方法第二實施例示意圖。FIG. 3D to FIG. 3E are schematic diagrams showing a second embodiment of the defect repairing method of the present invention.
圖四A至圖四C係為本發明之缺陷修補方法第三實施例示意圖。4A to 4C are schematic views showing a third embodiment of the defect repairing method of the present invention.
圖四D至圖四E係為本發明之缺陷修補方法第四實施例示意圖。FIG. 4D to FIG. 4E are schematic diagrams showing a fourth embodiment of the defect repairing method of the present invention.
圖五A至圖五C係為本發明之缺陷修補方法第五實施例示意圖。FIG. 5A to FIG. 5C are schematic diagrams showing a fifth embodiment of the defect repairing method of the present invention.
圖五D至圖五E係為本發明之缺陷修補方法第六實施例示意圖。FIG. 5D to FIG. 5E are schematic diagrams showing a sixth embodiment of the defect repairing method of the present invention.
圖五F至圖五G係為本發明之缺陷修補方法第七實施例示意圖。FIG. 5F to FIG. 5G are schematic diagrams showing a seventh embodiment of the defect repairing method of the present invention.
圖五H至圖五I係為本發明之缺陷修補方法第八實施例示意圖。FIG. 5H to FIG. 5I are schematic diagrams showing an eighth embodiment of the defect repairing method of the present invention.
圖六係為本發明之第八實施例與光罩結構結合示意圖。Figure 6 is a schematic view showing the combination of the eighth embodiment of the present invention and the reticle structure.
2a．．．缺陷修補結構2a. . . Defect repair structure
20．．．基板20. . . Substrate
21．．．缺陷線路twenty one. . . Defective line
22．．．修補材料層twenty two. . . Repair material layer
23．．．導電黏著層twenty three. . . Conductive adhesive layer
Claims (12)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW96111254A TWI401487B (en) | 2007-03-30 | 2007-03-30 | Structure and method for reparing defets of circuit pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW96111254A TWI401487B (en) | 2007-03-30 | 2007-03-30 | Structure and method for reparing defets of circuit pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200839349A TW200839349A (en) | 2008-10-01 |
| TWI401487B true TWI401487B (en) | 2013-07-11 |
Family
ID=44820823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW96111254A TWI401487B (en) | 2007-03-30 | 2007-03-30 | Structure and method for reparing defets of circuit pattern |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI401487B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9698377B1 (en) | 2016-05-06 | 2017-07-04 | Industrial Technology Research Institute | Copolymer and resin composition, packaging film and package structure including the same |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6177151B1 (en) * | 1999-01-27 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Matrix assisted pulsed laser evaporation direct write |
| US20020164537A1 (en) * | 1999-06-30 | 2002-11-07 | Kazumitsu Imahara | Electronic device and defect repair method thereof |
-
2007
- 2007-03-30 TW TW96111254A patent/TWI401487B/en not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6177151B1 (en) * | 1999-01-27 | 2001-01-23 | The United States Of America As Represented By The Secretary Of The Navy | Matrix assisted pulsed laser evaporation direct write |
| US20020164537A1 (en) * | 1999-06-30 | 2002-11-07 | Kazumitsu Imahara | Electronic device and defect repair method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 廖弘宇碩士論文，" 雷射同時植入銀膠與奈米碳管應用於場發射顯示器"，2006年12月。 陳俊宏碩士論文，"雷射輔助壓印技術機制探討"，2005年6月。 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9698377B1 (en) | 2016-05-06 | 2017-07-04 | Industrial Technology Research Institute | Copolymer and resin composition, packaging film and package structure including the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200839349A (en) | 2008-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5862238B2 (en) | LAMINATE, MANUFACTURING METHOD THEREOF, AND DEVICE STRUCTURE MANUFACTURING METHOD USING THE SAME | |
| JP6003883B2 (en) | LAMINATE, MANUFACTURING METHOD THEREOF, AND DEVICE STRUCTURE MANUFACTURING METHOD USING THE SAME | |
| JP5224011B2 (en) | LAMINATE, MANUFACTURING METHOD THEREOF, AND DEVICE STRUCTURE MANUFACTURING METHOD USING THE SAME | |
| US8673105B2 (en) | Method of manufacturing translucent rigid substrate laminate and translucent rigid substrate bonding apparatus | |
| JP5812990B2 (en) | Method for manufacturing translucent hard substrate laminate | |
| WO2015041190A1 (en) | Rigid composite laminate plate, method for manufacturing same, laminate, and method for manufacturing device using laminate | |
| TWI508863B (en) | The manufacturing method and the layered body of the layered body | |
| US9242442B2 (en) | Method of manufacturing translucent rigid substrate laminate and translucent rigid substrate bonding apparatus | |
| JP6024873B2 (en) | Cover glass for trackpad and method for manufacturing the same | |
| TWI605953B (en) | Method of separating laminate | |
| KR20120042898A (en) | Display modules | |
| KR20120033284A (en) | Method of manufacturing flexible electronic device, flexible electronic device and flexible substrate using a roll-shaped mother substrate | |
| JP2013082182A (en) | Method for manufacturing electronic device | |
| WO2005097396A1 (en) | Joining method and device therefor | |
| KR102065901B1 (en) | Resin substrate laminate and manufacturing method for electronic device | |
| JPWO2014119648A1 (en) | LAMINATE, METHOD FOR PRODUCING LAMINATE, AND METHOD FOR PRODUCING FLEXIBLE ELECTRONIC DEVICE | |
| JP2015178237A (en) | Laminated inorganic substrate, laminate, method of producing laminate and method of producing flexible electronic device | |
| TWI401487B (en) | Structure and method for reparing defets of circuit pattern | |
| KR101069809B1 (en) | Pad pattern repair apparatus | |
| TWI385273B (en) | Apparatus for repairing defects of circuit pattern and structure of target material | |
| JP2006202820A (en) | Member for circuit substrate, and method of manufacturing member for circuit substrate | |
| JP6201513B2 (en) | LAMINATE MANUFACTURING METHOD AND DEVICE STRUCTURE MANUFACTURING METHOD USING THE SAME | |
| CN101276070A (en) | Defect mending method and structure | |
| CN116438324A (en) | Metal mask for vapor deposition and method for manufacturing metal mask for vapor deposition | |
| JP5564522B2 (en) | Manufacturing method of cover glass for electronic device and manufacturing method of touch sensor module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |