TWI385273B - Apparatus for repairing defects of circuit pattern and structure of target material - Google Patents

Apparatus for repairing defects of circuit pattern and structure of target material Download PDF

Info

Publication number
TWI385273B
TWI385273B TW96111255A TW96111255A TWI385273B TW I385273 B TWI385273 B TW I385273B TW 96111255 A TW96111255 A TW 96111255A TW 96111255 A TW96111255 A TW 96111255A TW I385273 B TWI385273 B TW I385273B
Authority
TW
Taiwan
Prior art keywords
unit
repairing device
electromagnetic wave
defect repairing
defect
Prior art date
Application number
TW96111255A
Other languages
Chinese (zh)
Other versions
TW200839030A (en
Inventor
Shih Chieh Liao
Hui Ta Chen
yi long Wang
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW96111255A priority Critical patent/TWI385273B/en
Publication of TW200839030A publication Critical patent/TW200839030A/en
Application granted granted Critical
Publication of TWI385273B publication Critical patent/TWI385273B/en

Links

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Description

缺陷修補裝置及靶材結構Defect repair device and target structure

本發明係有關一種修補裝置,尤其是指一種利用具有流體冷卻以避免裝置之構成元件以及修補材料受到熱影響而遭受破壞以及氧化之一種缺陷修補裝置。The present invention relates to a repairing apparatus, and more particularly to a defect repairing apparatus which utilizes fluid cooling to prevent constituent elements of the apparatus and the repairing material from being damaged by heat and oxidation.

平面顯示器(Flat Panel Display,FPD)已是國內最重要的產業之一,隨著大尺寸液晶顯示器面板的發展量產到七代廠,面板尺寸的大型化及產能需求不斷提高的趨勢及市場需求下,使得現有的修補製程面臨極大的瓶頸。如圖一所示,平面顯示器的前段製程主要為利用光阻蝕刻技術進行線路圖案成型,而在此製程中因污染及本身的蝕刻誤差,導致製程完成後於線路圖案中產生開路缺陷(open defect)10以及線缺陷(line defect)11,這些缺陷是不被允許的,因此必須加以修補(repair)。Flat Panel Display (FPD) is one of the most important industries in China. With the development of large-size LCD panel production to the seven-generation plant, the size of the panel and the increasing demand for production capacity and market demand Under the existing, the existing repair process faces a huge bottleneck. As shown in Fig. 1, the front-end process of the flat panel display mainly uses the photoresist etching technology to form the line pattern, and in the process, the open defect is generated in the line pattern after the process is completed due to contamination and its own etching error. ) 10 and line defect 11, these defects are not allowed, so they must be repaired.

傳統進行修補的主要方式為雷射化學氣相沉積(Laser Chemical Vapor Deposition,Laser CVD),而此修補製程主要是將檢測後的面板離線送至需特殊氣氛環境的Laser CVD設備中,再利用雷射光與特殊氣體的光化學反應,使修補的線路材料沉積於具有缺陷的線路上而完成修補製程。因為需要離線進行修補處理及製程需要於特殊氣氛環境下進行,導致使用Laser CVD進行修補製程的產能較低。The main method of repairing is Laser Chemical Vapor Deposition (Laser CVD), and the repair process is mainly to take the tested panel offline to the Laser CVD equipment in a special atmosphere environment, and then use the mine. The photochemical reaction of the illuminating light with the special gas causes the repaired circuit material to be deposited on the defective line to complete the repair process. Because the need for off-line repair processing and process needs to be carried out in a special atmosphere, the productivity of the repair process using Laser CVD is low.

另外,習用技術中如日本公開專利JP.NO.2000031013號所揭露的一種線路圖案修補裝置與方法,其係利用雷射將修補材料轉移至具有缺陷的線路圖案上,以回復線路圖案之電性。在該技術中,修補的線路材料受雷射光照射後,修補材料容易受到雷射光之能量而產生熱影響區之現象,因此會有材料氧化及破壞的問題。此外,在習用技術中也容易因為高熱而導致裝置之相關元件,例如:修補材料承載單元以及被修補之基板遭到損壞。In addition, a circuit pattern repairing apparatus and method disclosed in Japanese Laid-Open Patent Publication No. 2000031013, which uses a laser to transfer a repairing material to a defective line pattern to restore the electrical properties of the line pattern. . In this technique, after the repaired wiring material is irradiated with laser light, the repairing material is susceptible to the energy of the laser light to generate a heat-affected zone, and thus there is a problem of oxidation and destruction of the material. In addition, in the conventional technology, it is also easy to cause damage to related components of the device, such as the repair material carrying unit and the repaired substrate, due to high heat.

本發明提供一種缺陷修補裝置,其係可提供冷卻以避免修補裝置之構成元件或被修補之基板因在修補過程中受熱而遭受熱損害。The present invention provides a defect repairing apparatus which can provide cooling to prevent the constituent elements of the repairing apparatus or the repaired substrate from being thermally damaged by heat during the repairing process.

本發明提供一種缺陷修補裝置,其係可提供冷卻以避免修補材料因在修補過程中受熱而氧化,進而影響其導電特性。The present invention provides a defect repair device that provides cooling to prevent the repair material from oxidizing due to heat during the repair process, thereby affecting its conductive properties.

本發明提供一種缺陷修補裝置,其係不需將檢測後之面板離線修補,可與整線製程設備結合,大幅提升生產效率。The invention provides a defect repairing device, which does not need to repair the panel after inspection, and can be combined with the whole line process equipment to greatly improve the production efficiency.

本發明提供一靶材結構,其係承載多種不同材質以及不同厚度之修補材料,以適用於各種多樣式之修補圖案。The present invention provides a target structure that carries a plurality of different materials and repairing materials of different thicknesses to be applied to various multi-style repair patterns.

在一實施例中,本發明提供一種缺陷修補裝置,包括:一電磁波發射單元;一平台,其係可提供承載待修補之一基板,該基板上具有一缺陷線路;一承載單元,其係設置於該電磁波發射單元與該平台之間,該承載單元係承載有一修補材料,該修補材料可接收該電磁波發射單元所提供之電磁波光束,以轉移至該缺陷線路上;以及一流體冷卻單元,其係可吸收在轉移修補材料時所產生之熱,以提供冷卻。In one embodiment, the present invention provides a defect repairing apparatus comprising: an electromagnetic wave emitting unit; a platform capable of providing a substrate to be repaired, the substrate having a defective line; and a carrying unit configured Between the electromagnetic wave emitting unit and the platform, the carrying unit carries a repairing material, the repairing material can receive the electromagnetic wave beam provided by the electromagnetic wave emitting unit to be transferred to the defective line; and a fluid cooling unit The heat generated during the transfer of the repair material can be absorbed to provide cooling.

在另一實施例中,該流體冷卻單元係為一承載單元冷卻裝置,其係設置於該承載單元上,該承載單元冷卻裝置可以提供一氣流作用於該承載單元上。In another embodiment, the fluid cooling unit is a carrier unit cooling device disposed on the carrying unit, and the carrying unit cooling device can provide an air flow on the carrying unit.

在另一實施例中,該流體冷卻單元更具有:一保護氣簾單元,其係設置於該承載單元之周圍且具有複數個氣流通道,以提供一循環氣流於該基板以及該修補材料上;以及一承載單元冷卻裝置,其係設置於該承載單元上,該承載單元冷卻裝置可以提供一冷卻氣流。In another embodiment, the fluid cooling unit further has: a protective air curtain unit disposed around the carrying unit and having a plurality of air flow passages to provide a circulating airflow on the substrate and the repairing material; A load bearing unit cooling device is disposed on the load bearing unit, and the load bearing unit cooling device can provide a cooling air flow.

在另一實施例中,該流體冷卻單元更具有:一保護氣簾單元,其係設置於該承載單元之周圍且具有複數個氣流通道,以提供一循環氣流於該基板以及該修補材料上;一承載單元冷卻裝置,其係設置於該承載單元上,該承載單元冷卻裝置可以提供一冷卻氣流;以及一平台冷卻單元,其係設置於該平台上,該平台冷卻單元具有循環迴路以提供一流體進行循環。In another embodiment, the fluid cooling unit further includes: a protective air curtain unit disposed around the carrying unit and having a plurality of air flow passages to provide a circulating airflow on the substrate and the repairing material; a load bearing unit cooling device disposed on the load bearing unit, the load bearing unit cooling device can provide a cooling air flow; and a platform cooling unit disposed on the platform, the platform cooling unit having a circulation loop to provide a fluid Loop.

在另一實施例中,該流體冷卻單元更具有:一保護氣簾單元,其係設置於該承載單元之周圍且具有複數個氣流通道,以提供一循環氣流於該基板以及該修補材料上;以及一平台冷卻單元,其係設置於該平台上,該平台冷卻單元具有循環迴路以提供一流體進行循環。In another embodiment, the fluid cooling unit further has: a protective air curtain unit disposed around the carrying unit and having a plurality of air flow passages to provide a circulating airflow on the substrate and the repairing material; A platform cooling unit is disposed on the platform, the platform cooling unit having a circulation loop to provide a fluid for circulation.

在另一實施例中,該流體冷卻單元更具有:一承載單元冷卻裝置,其係設置於該承載單元上,該承載單元冷卻裝置可以提供一冷卻氣流;以及一平台冷卻單元,其係設置於該平台上,該平台冷卻單元具有循環迴路以提供一流體進行循環。In another embodiment, the fluid cooling unit further has: a carrying unit cooling device disposed on the carrying unit, the carrying unit cooling device can provide a cooling airflow; and a platform cooling unit disposed on the On the platform, the platform cooling unit has a circulation loop to provide a fluid for circulation.

在一實施例中,本發明更提供一種靶材結構,包括:一承載板;以及複數種修補材料,其係形成於該承載板之一面上。該複數種修補材料可選擇環形陣列以及矩形陣列其中之一而排列於該承載板上。In one embodiment, the present invention further provides a target structure comprising: a carrier plate; and a plurality of repair materials formed on one side of the carrier plate. The plurality of repair materials may be arranged on the carrier board by one of an annular array and a rectangular array.

為使 貴審查委員能對本發明之特徵、目的及功能有更進一步的認知與瞭解,下文特將本發明之裝置的相關細部結構以及設計的理念原由進行說明,以使得 審查委員可以了解本發明之特點,詳細說明陳述如下:請參閱圖二A與圖二B所示,該圖係為本發明缺陷修補裝置之第一實施例示意圖。該缺陷修補裝置2具有一電磁波發射單元20、一平台23、一承載單元21以及一流體冷卻單元。該電磁波發射單元20係可產生電磁波光束200,其係可選擇為全波段雷射光源或者是紫外光波雷射。在本實施例中,該電磁波發射單元20係為全波段雷射光源。In order to enable the reviewing committee to have a further understanding and understanding of the features, objects and functions of the present invention, the related detailed structure of the device of the present invention and the concept of the design are explained below so that the reviewing committee can understand the present invention. The detailed description is as follows: Please refer to FIG. 2A and FIG. 2B, which is a schematic diagram of the first embodiment of the defect repairing device of the present invention. The defect repairing device 2 has an electromagnetic wave emitting unit 20, a platform 23, a carrying unit 21, and a fluid cooling unit. The electromagnetic wave emitting unit 20 can generate an electromagnetic wave beam 200, which can be selected as a full-band laser light source or an ultraviolet light wave laser. In the present embodiment, the electromagnetic wave emitting unit 20 is a full-band laser light source.

該平台23,其係可提供承載待修補之一基板30,該基板30上具有一缺陷線路31。該缺陷線路31係可為線缺陷或者是開路缺陷或者是前述兩者之組成,在本實施例中係以開路缺陷作說明。該基板30可是玻璃基板或者是矽基板,面板上之線路圖案在本實施例中係為應用於平面顯示器之線路圖案,但不在此限。該承載單元21,其係設置於該電磁波發射單元20與該平台23之間,該承載單元21係具有一固定單元210以及一承載板211。該承載板211係承載有一修補材料22,該修補材料22可接收該電磁波發射單元20所提供之電磁波光束200,以轉移至該缺陷線路31上。該修補材料22可為金屬可導電之材料,該金屬可導電材料可選擇鎢、金、銀、銅、銀膠或者是鉬材料,但不在此限。在本實施例中,該修補材料22係形成於一承載板211上,該承載單元21之固定單元210係利用真空吸附或者是夾持的方式固定該承載板211,此時該修補材料22係與該缺陷線路31相對應。The platform 23 is provided with a substrate 30 to be repaired, and the substrate 30 has a defective line 31 thereon. The defective line 31 may be a line defect or an open circuit defect or a combination of the two, and is described as an open defect in the present embodiment. The substrate 30 may be a glass substrate or a germanium substrate, and the circuit pattern on the panel is a line pattern applied to the flat display in this embodiment, but is not limited thereto. The carrying unit 21 is disposed between the electromagnetic wave emitting unit 20 and the platform 23, and the carrying unit 21 has a fixing unit 210 and a carrying plate 211. The carrier plate 211 carries a repairing material 22, and the repairing material 22 can receive the electromagnetic wave beam 200 provided by the electromagnetic wave emitting unit 20 to be transferred to the defective line 31. The repairing material 22 may be a metal conductive material, and the metal conductive material may be selected from tungsten, gold, silver, copper, silver paste or molybdenum material, but not limited thereto. In this embodiment, the repairing material 22 is formed on a supporting plate 211, and the fixing unit 210 of the carrying unit 21 fixes the supporting plate 211 by vacuum suction or clamping, and the repairing material 22 is Corresponding to the defective line 31.

該流體冷卻單元,其係可提供冷卻以避免該修補材料因受熱氧化、該基板因受熱影響而損壞或者是缺陷修補裝置之構成元件,例如:承載單元21,受熱而損壞。本發明之流體冷卻單元可以對基板30或者是修補材料22提供冷卻之效果以避免基板30損壞或者是修補材料22因在轉移的過程中受熱氧化,進而減低或者是喪失其導電之特性。此外,流體冷卻單元可以對承載修補材料22之承載板211提供冷卻之效果,以防止承載板211受熱而損壞。The fluid cooling unit is configured to provide cooling to prevent damage to the repair material due to thermal oxidation, damage to the substrate due to heat, or constituent elements of the defect repairing device, such as the load bearing unit 21, which is damaged by heat. The fluid cooling unit of the present invention can provide a cooling effect to the substrate 30 or the repair material 22 to avoid damage to the substrate 30 or damage to the repair material 22 due to thermal oxidation during transfer, thereby reducing or losing its electrical conductivity. In addition, the fluid cooling unit can provide a cooling effect to the carrier plate 211 carrying the repair material 22 to prevent the carrier plate 211 from being damaged by heat.

因此在圖二A之實施例中,該流體冷卻單元係包括有:一保護氣簾單元24以及一平台冷卻單元230。該保護氣簾單元24,其係設置於該承載單元21之周圍且具有複數個氣流通道240,以提供一循環氣流90於該基板30以及該修補材料22上。該平台冷卻單元230,其係設置於該平台23內,該平台冷卻單元230具有循環迴路以提供一流體進行循環。該保護氣簾單元上的氣流通道,可導引循環氣流90由上往下吹,並在該修補材料22與該基板30之間循環。Therefore, in the embodiment of FIG. 2A, the fluid cooling unit includes: a protective air curtain unit 24 and a platform cooling unit 230. The protective air curtain unit 24 is disposed around the carrying unit 21 and has a plurality of air flow passages 240 to provide a circulating air flow 90 on the substrate 30 and the repairing material 22. The platform cooling unit 230 is disposed within the platform 23, and the platform cooling unit 230 has a circulation loop to provide a fluid for circulation. The airflow passage on the protective air curtain unit guides the circulating airflow 90 from top to bottom and circulates between the repairing material 22 and the substrate 30.

如圖二B所示,當電磁波發射單元20發射出電磁波光束200(本實施例為全波段雷射)時,修補材料22接受電磁波光束200照射後產生的碰撞壓力,亦即直接來自光子撞擊所產生的光壓,輔以電磁波能量產生打斷分子鍵結或***現象,而轉移至缺陷線路31上。此時該循環氣流90可以吸收熱電磁波轉移修補材料22時所產生之熱量,並可以形成氣幕以避免外界空氣進入,進而防止該修補材料22氧化。在本實施例中該循環氣流90之氣體可選擇為惰性氣體,例如:氦氣或者是氖氣等,但不在此限。另外該平台冷卻單元230可藉由循環迴路內所通過之流體,例如液體或者是氣體,產生冷卻之效果,以避免基板30在轉移過程中受熱而損壞。該平台冷卻單元230之技術係可利用習用技術達成,在此不作贅述。As shown in FIG. 2B, when the electromagnetic wave emitting unit 20 emits the electromagnetic wave beam 200 (in this embodiment, a full-band laser), the repairing material 22 receives the collision pressure generated by the electromagnetic wave beam 200, that is, directly from the photon impacting device. The generated light pressure, supplemented by electromagnetic wave energy, breaks the molecular bond or explosion phenomenon and is transferred to the defect line 31. At this time, the circulating airflow 90 can absorb the heat generated when the thermal electromagnetic wave transfer repairing material 22, and can form an air curtain to prevent the outside air from entering, thereby preventing the repairing material 22 from being oxidized. In the present embodiment, the gas of the circulating gas stream 90 may be selected as an inert gas, such as helium or helium, but not limited thereto. In addition, the platform cooling unit 230 can generate a cooling effect by a fluid, such as a liquid or a gas, passing through the circulation loop to prevent the substrate 30 from being damaged by heat during the transfer process. The technology of the platform cooling unit 230 can be achieved by using conventional techniques, and will not be described herein.

請參閱圖三所示,該圖三係為本發明缺陷修補裝置之第二實施例示意圖。在本實施例中,在該承載單元21上更設置有一承載單元冷卻裝置25,其係設置於該承載單元上21,該承載單元冷卻裝置25可以提供一冷卻氣流91作用於該承載單元21以及該承載板211上。由於該電磁波發射單元20所產生之電磁波光束200係會穿透該承載板211,因此在轉移的過程中承載板211也會產生高熱。為了避免在轉移過程中所產生之高熱破壞承載板211,該承載單元冷卻裝置25所產生之冷卻氣流91可以輔助降低承載板211之溫度,以增加承載板211之使用壽命。另外,由於該承載單元冷卻裝置25也可以提供輔助降低修補材料22之溫度以及避免電磁波能量不均之功效。在本實施例中,該冷卻氣流91之氣體可選擇為惰性氣體,例如:氦氣或者是氖氣等,但不在此限。Please refer to FIG. 3, which is a schematic diagram of a second embodiment of the defect repairing device of the present invention. In this embodiment, a load bearing unit cooling device 25 is further disposed on the load bearing unit 21, and the load bearing unit cooling device 25 can provide a cooling airflow 91 to the load bearing unit 21 and The carrier plate 211 is on. Since the electromagnetic wave beam 200 generated by the electromagnetic wave emitting unit 20 penetrates the carrier plate 211, the carrier plate 211 also generates high heat during the transfer. In order to avoid the high heat damage of the carrier plate 211 generated during the transfer process, the cooling airflow 91 generated by the carrier unit cooling device 25 can assist in reducing the temperature of the carrier plate 211 to increase the service life of the carrier plate 211. In addition, since the carrier unit cooling device 25 can also provide an effect of assisting in lowering the temperature of the repair material 22 and avoiding electromagnetic wave energy unevenness. In this embodiment, the gas of the cooling airflow 91 may be selected as an inert gas, such as helium or helium, but not limited thereto.

綜合前述之本發明所提供之流體冷卻單元之實施例具有保護氣簾單元24、承載單元冷卻裝置25以及平台冷卻裝置230。前述之保護氣簾單元24、承載單元冷卻裝置25以及平台冷卻裝置230可以單獨實施或者是相互組合以達到不同之冷卻功效,如圖四A至圖四C所示之流體冷卻單元的不同組合實施例。例如:在圖四A之中,該流體冷卻單元係為承載單元冷卻裝置25與平台冷卻單元230之組合。而在圖四B之中,該流體冷卻單元係為承載單元冷卻裝置25。另外在圖四C之中,該流體冷卻單元係為平台冷卻單元230。An embodiment of the fluid cooling unit provided by the foregoing invention has a protective air curtain unit 24, a load bearing unit cooling device 25 and a platform cooling device 230. The foregoing protective air curtain unit 24, the load bearing unit cooling device 25 and the platform cooling device 230 may be implemented separately or combined with each other to achieve different cooling effects, and different combinations of fluid cooling units as shown in FIGS. 4A to 4C . For example, in FIG. 4A, the fluid cooling unit is a combination of the carrier unit cooling device 25 and the platform cooling unit 230. In FIG. 4B, the fluid cooling unit is the carrying unit cooling device 25. Also in FIG. 4C, the fluid cooling unit is a platform cooling unit 230.

接下來請參閱圖五所示,該圖係為本發明缺陷修補裝置之第三實施例示意圖。在本實施例中,在該修補材料22與該電磁波發射單元20之間更可以設置一光罩結構26,以對不同之線路圖案進行修補,增加可修補圖案之多樣性。雖然在圖五中係將光罩結構26與圖二A之缺陷修補裝置實施例結合,但實際上亦可與圖三之實施例結合,或者是其他單獨或者是組合實施。Next, please refer to FIG. 5, which is a schematic diagram of a third embodiment of the defect repairing device of the present invention. In this embodiment, a reticle structure 26 may be further disposed between the repairing material 22 and the electromagnetic wave emitting unit 20 to repair different circuit patterns to increase the variety of repairable patterns. Although the reticle structure 26 is combined with the defect repairing device embodiment of FIG. 2A in FIG. 5, it may be actually combined with the embodiment of FIG. 3, or may be implemented separately or in combination.

請參閱圖六所示,該圖係為本發明缺陷修補裝置之第四實施例示意圖。在本實施例中,在該修補材料22與該電磁波發射單元20之間更可以設置一光形調整單元27(beam shaper)。該光形調整單元27可以視需求選擇聚焦該電磁波光束、增大該電磁波光束之面積或者是調整該電磁波光束之線形,以配合不同之線路圖案進行修補,增加可修補圖案之多樣性。該光形調整單元27係為習用技術之商品,在此不作贅述。雖然在圖六中係將光形調整單元27與圖二A之實施例結合,但實際上亦可與圖三之實施例結合,或者是其他單獨或者是組合實施本發明之流體冷卻單元的實施例(如:圖四A至圖四C)相組合。Please refer to FIG. 6, which is a schematic view of a fourth embodiment of the defect repairing apparatus of the present invention. In this embodiment, a beam shaper 27 may be further disposed between the repairing material 22 and the electromagnetic wave emitting unit 20. The light shape adjusting unit 27 can selectively focus the electromagnetic wave beam, increase the area of the electromagnetic wave beam, or adjust the linear shape of the electromagnetic wave beam to repair the different line patterns, and increase the diversity of the repairable pattern. The light shape adjusting unit 27 is a commodity of a conventional technique and will not be described herein. Although the light shape adjusting unit 27 is combined with the embodiment of FIG. 2A in FIG. 6, it may be actually combined with the embodiment of FIG. 3, or other implementations of the fluid cooling unit of the present invention, alone or in combination. Examples (eg, Figure 4A to Figure 4C) are combined.

接下來說明轉移時之靶材結構,該靶材結構係由前述之承載板211以及修補材料22所構成。在前述之實施例中,靶材結構之修補材料22係皆為相同性質之材。請參閱圖七所示,該圖係為本發明之靶材結構第一實施例示意圖,在本實施例中,該靶材結構之承載板213係為矩形承載板,而其上具有複數種修補材料22a,該複數種修補材料22a係成矩形陣列排列於該承載板213上。該複數種修補材料22a之組成可以相同或者是不相同,例如在圖七中之a位置上的修補材料與b位置上的修補材料可為相同結構或者是不相同結構。Next, the target structure at the time of transfer will be described. The target structure is composed of the aforementioned carrier plate 211 and repair material 22. In the foregoing embodiments, the repair material 22 of the target structure is of the same nature. Please refer to FIG. 7 , which is a schematic view of a first embodiment of a target structure according to the present invention. In this embodiment, the carrier plate 213 of the target structure is a rectangular carrier plate having a plurality of repairs thereon. The material 22a, the plurality of repair materials 22a are arranged in a rectangular array on the carrier plate 213. The composition of the plurality of repair materials 22a may be the same or different, for example, the repair material at the position a in FIG. 7 and the repair material at the b position may be the same structure or different structures.

接下來說明修補材料之幾種實施例。以位置a之修補材料為例,其係可為如圖八A之狀態,該修補材料係為單一之金屬材料層220,該金屬材料層220之材料可以選擇為鎢、金、銀、銅、銀膠以及鉬其中之一。另為如圖八B所示,該圖係為修補材料之另一實施例,在本實施例中,該修補材料具有一緩衝層221以及一金屬材料層220。該緩衝層221係形成於該承載板213上,而該金屬材料層220則形成於該緩衝層221上。該金屬材料層220之材料選擇如前所述。在本實施例中,該緩衝層221不轉移至缺陷線路上,該緩衝層221之目的在於吸收電磁波光源之能量並傳導部分之電磁波能量給該金屬材料層220。如此一來,一方面可以避免該金屬材料層220因受熱而氧化,進而影響導電之特性;另一方面也可以藉由該緩衝層221與金屬材料層220之間的低黏著性,以使得金屬材料層220容易從緩衝層221轉移至缺陷線路上。該緩衝層221係可選擇為高分子材料,在本實施例中,該高分子材料係選擇為聚二甲基矽氧烷(Polydimethylsiloxane,PDMS)。Several examples of repair materials are described next. For example, the repairing material of the position a may be in the state of FIG. 8A, and the repairing material is a single metal material layer 220, and the material of the metal material layer 220 may be selected from tungsten, gold, silver, copper, One of silver glue and molybdenum. In addition, as shown in FIG. 8B, the figure is another embodiment of the repairing material. In the embodiment, the repairing material has a buffer layer 221 and a metal material layer 220. The buffer layer 221 is formed on the carrier plate 213, and the metal material layer 220 is formed on the buffer layer 221. The material of the metal material layer 220 is selected as described above. In the present embodiment, the buffer layer 221 is not transferred to the defect line. The purpose of the buffer layer 221 is to absorb the energy of the electromagnetic wave source and conduct part of the electromagnetic wave energy to the metal material layer 220. In this way, on the one hand, the metal material layer 220 can be prevented from being oxidized by heat, thereby affecting the characteristics of the conductive material; on the other hand, the low adhesion between the buffer layer 221 and the metal material layer 220 can also be used to make the metal The material layer 220 is easily transferred from the buffer layer 221 to the defect line. The buffer layer 221 can be selected as a polymer material. In the present embodiment, the polymer material is selected from polydimethylsiloxane (PDMS).

如圖八C所示,在本實施例中,該修補材料具有一金屬材料層220以及一導電黏著層222。該金屬材料層220,其係形成於該承載板213上。該導電黏著層222,其係形成於該金屬材料層220上。該金屬材料層220之材料選擇如前所述,而該導電黏著層222主要目的係為加強金屬材料層220於轉移後與缺陷線路之間的黏著性。該導電黏著層222之材料係可選擇同時具有導電性以及黏著性之材料,在本實施例中係使用銀膠。另外如圖八D所示,更可以在圖八C之結構上於該金屬材料層220與該承載板213之間形成一層緩衝層221。該緩衝層221之目的如前所述,在此不做贅述。As shown in FIG. 8C, in the embodiment, the repairing material has a metal material layer 220 and a conductive adhesive layer 222. The metal material layer 220 is formed on the carrier plate 213. The conductive adhesive layer 222 is formed on the metal material layer 220. The material of the metal material layer 220 is selected as described above, and the conductive adhesive layer 222 is mainly used to strengthen the adhesion of the metal material layer 220 to the defect line after transfer. The material of the conductive adhesive layer 222 is selected from materials having both conductivity and adhesion. In the present embodiment, silver paste is used. In addition, as shown in FIG. 8D, a buffer layer 221 may be formed between the metal material layer 220 and the carrier plate 213 in the structure of FIG. The purpose of the buffer layer 221 is as described above, and will not be described herein.

如圖八E所示,在本實施例中,該修補材料更具有:一中介層224以及一金屬材料層220。該中介層224,其係形成於該承載板213上。該金屬材料層220,其係形成於該中介層224上。該中介層224係為可吸收電磁波能量之材料,以保護該金屬材料層220免於直接受到該電磁波光源之影響而產生熱影響區,以避免該金屬材料層220因受熱而氧化,進而影響導電之特性。該金屬材料層220之材料如前所述,而該該中介層224之材料係為鈦,但不以此為限。另外,在該中介層224與該承載板213之間形成一層緩衝層221,如圖八F之結構。該緩衝層221之目的如前所述,在此不做贅述。或者是在圖八E之結構下,於該金屬材料層220上更形成一層導電黏著層222,以形成如圖八G之結構。另外也可以在圖八G之結構下,在該中介層224與該承載板213之間形成一層緩衝層221。至於前述之緩衝層221以及導電黏著層222之結構以及目的如前所述在此不做贅述。As shown in FIG. 8E, in the embodiment, the repairing material further has an interposer 224 and a metal material layer 220. The interposer 224 is formed on the carrier plate 213. The metal material layer 220 is formed on the interposer 224. The interposer 224 is a material that can absorb electromagnetic wave energy to protect the metal material layer 220 from being directly affected by the electromagnetic wave source to generate a heat-affected zone, so as to prevent the metal material layer 220 from being oxidized by heat, thereby affecting the conductive Characteristics. The material of the metal material layer 220 is as described above, and the material of the interposer 224 is titanium, but not limited thereto. In addition, a buffer layer 221 is formed between the interposer 224 and the carrier plate 213, as shown in FIG. The purpose of the buffer layer 221 is as described above, and will not be described herein. Or, under the structure of FIG. 8E, a conductive adhesive layer 222 is further formed on the metal material layer 220 to form a structure as shown in FIG. Alternatively, a buffer layer 221 may be formed between the interposer 224 and the carrier plate 213 under the structure of FIG. The structure and purpose of the buffer layer 221 and the conductive adhesive layer 222 are not described herein.

另外,除了圖八之矩形結構承載板外,如圖九所示,該承載板也可以為圓形之承載板214。在本實施例中,該複數種修補材料22b係成環形陣列分布於承載板214上。至於修補材料22b之種類與結構如前所述。In addition, in addition to the rectangular structure carrier plate of FIG. 8, as shown in FIG. 9, the carrier plate may also be a circular carrier plate 214. In this embodiment, the plurality of repair materials 22b are distributed in an annular array on the carrier plate 214. As for the type and structure of the repairing material 22b, as described above.

惟以上所述者,僅為本發明之實施例,當不能以之限制本發明範圍。即大凡依本發明申請專利範圍所做之均等變化及修飾,仍將不失本發明之要義所在,亦不脫離本發明之精神和範圍,故都應視為本發明的進一步實施狀況。However, the above is only an embodiment of the present invention, and the scope of the present invention is not limited thereto. It is to be understood that the scope of the present invention is not limited by the spirit and scope of the present invention, and should be considered as a further embodiment of the present invention.

綜合上述,本發明提供之缺陷修補裝置及靶材結構,其係具有避免裝置與待修補之基板在轉移修補材料的過程中受到熱損壞以及避免修補材料受熱而氧化。另外,更可以根據需求改變修補圖案。因此可以滿足業界之需求,進而提高該產業之競爭力以及帶動週遭產業之發展,誠已符合發明專利法所規定申請發明所需具備之要件,故爰依法呈提發明專利之申請,謹請 貴審查委員允撥時間惠予審視,並賜准專利為禱。In summary, the present invention provides a defect repairing device and a target structure which are designed to prevent thermal damage of the device and the substrate to be repaired during transfer of the repair material and to prevent oxidation of the repair material by heat. In addition, the patch pattern can be changed as needed. Therefore, it can meet the needs of the industry, and thus improve the competitiveness of the industry and promote the development of the surrounding industries. Chengcheng has met the requirements for applying for inventions as stipulated by the invention patent law. Therefore, it is necessary to submit an application for invention patents according to law. The review committee allowed time to review and grant the patent as a prayer.

1...線路圖案1. . . Line pattern

10、11...缺陷10, 11. . . defect

2...缺陷修補裝置2. . . Defect repair device

20...電磁波發射單元20. . . Electromagnetic wave emitting unit

200...電磁波200. . . Electromagnetic wave

21...承載單元twenty one. . . Bearer unit

210...固定單元210. . . Fixed unit

211、213、214...承載板211, 213, 214. . . Carrier board

22、22a、22b...修補材料22, 22a, 22b. . . Repair material

220...金屬材料層220. . . Metal material layer

221...緩衝層221. . . The buffer layer

222...導電黏著層222. . . Conductive adhesive layer

224...中介層224. . . Intermediary layer

23...平台twenty three. . . platform

230...平台冷卻單元230. . . Platform cooling unit

24...保護氣簾單元twenty four. . . Protective curtain unit

240...氣流通道240. . . Air flow channel

25...承載單元冷卻裝置25. . . Carrying unit cooling device

26...光罩結構26. . . Photomask structure

27...光形調整單元27. . . Light adjustment unit

30...基板30. . . Substrate

31...缺陷線路31. . . Defective line

90...循環氣流90. . . Circulating airflow

91...冷卻氣流91. . . Cooling airflow

圖一係為線路圖案之缺陷示意圖。Figure 1 is a schematic diagram of the defect of the line pattern.

圖二A與圖二B係為本發明缺陷修補裝置之第一實施例示意圖。2A and 2B are schematic views showing a first embodiment of the defect repairing apparatus of the present invention.

圖三係為本發明缺陷修補裝置之第二實施例示意圖。FIG. 3 is a schematic view of a second embodiment of the defect repairing device of the present invention.

圖四A至圖四C係為本發明缺陷修補裝置之流體冷卻單元其他實施例示意圖。4A to 4C are schematic views showing other embodiments of the fluid cooling unit of the defect repairing device of the present invention.

圖五係為本發明缺陷修補裝置之第三實施例示意圖。Figure 5 is a schematic view of a third embodiment of the defect repairing device of the present invention.

圖六係為本發明缺陷修補裝置之第四實施例示意圖。Fig. 6 is a schematic view showing a fourth embodiment of the defect repairing device of the present invention.

圖七係為本發明之靶材結構第一實施例示意圖。Figure 7 is a schematic view showing a first embodiment of the target structure of the present invention.

圖八A至圖八H係為本發明之修補材料結構示意圖。8A to 8H are schematic views showing the structure of the repairing material of the present invention.

圖九係為本發明之靶材結構第二實施例示意圖。Figure 9 is a schematic view showing a second embodiment of the target structure of the present invention.

2...缺陷修補裝置2. . . Defect repair device

20...電磁波發射單元20. . . Electromagnetic wave emitting unit

200...電磁波光束200. . . Electromagnetic wave beam

21...承載單元twenty one. . . Bearer unit

210...固定單元210. . . Fixed unit

211...承載板211. . . Carrier board

22...修補材料twenty two. . . Repair material

23...平台twenty three. . . platform

230...平台冷卻單元230. . . Platform cooling unit

24...保護氣簾單元twenty four. . . Protective curtain unit

240...氣流通道240. . . Air flow channel

30...基板30. . . Substrate

31...缺陷線路31. . . Defective line

90...循環氣流90. . . Circulating airflow

Claims (125)

一種缺陷修補裝置,包括:一電磁波發射單元;一平台,其係可提供承載待修補之一基板,該基板上具有一缺陷線路;一承載單元,其係設置於該電磁波發射單元與該平台之間,該承載單元係承載有一修補材料,該修補材料可接收該電磁波發射單元所提供之電磁波,以轉移至該缺陷線路上;以及一流體冷卻單元,其係可吸收在轉移修補材料時所產生之熱,以提供冷卻,該流體冷卻單元係為一保護氣簾單元,其係設置於該承載單元之周圍且具有複數個氣流通道,以提供一循環氣流於該基板以及該修補材料上。 A defect repairing device comprising: an electromagnetic wave emitting unit; a platform for providing a substrate to be repaired, the substrate having a defective line; and a carrying unit disposed on the electromagnetic wave transmitting unit and the platform The carrying unit carries a repairing material that can receive electromagnetic waves provided by the electromagnetic wave transmitting unit to be transferred to the defective line; and a fluid cooling unit that can absorb the generated material when transferring the repairing material The heat is provided to provide cooling. The fluid cooling unit is a protective air curtain unit disposed around the carrying unit and having a plurality of air flow passages to provide a circulating airflow on the substrate and the repairing material. 如申請專利範圍第1項所述之缺陷修補裝置,其中該缺陷線路係為線缺陷及開路缺陷或前述之組成其中之一。 The defect repairing device of claim 1, wherein the defective circuit is one of a line defect and an open circuit defect or a combination thereof. 如申請專利範圍第1項所述之缺陷修補裝置,其中該循環氣流係可選擇為惰性氣體。 The defect repairing device of claim 1, wherein the circulating gas flow is selected to be an inert gas. 如申請專利範圍第3項所述之缺陷修補裝置,其中該惰性氣體係可選擇為氦氣以及氖氣其中之一。 The defect repairing device of claim 3, wherein the inert gas system is selected to be one of helium and neon. 一種缺陷修補裝置,包括:一電磁波發射單元;一平台,其係可提供承載待修補之一基板,該基板上具有一缺陷線路; 一承載單元,其係設置於該電磁波發射單元與該平台之間,該承載單元係承載有一修補材料,該修補材料可接收該電磁波發射單元所提供之電磁波,以轉移至該缺陷線路上;以及一流體冷卻單元,其係可吸收在轉移修補材料時所產生之熱,以提供冷卻,其中該流體冷卻單元係為一承載單元冷卻裝置,其係設置於該承載單元上,該承載單元冷卻裝置可以提供一冷卻氣流。 A defect repairing device comprising: an electromagnetic wave emitting unit; a platform capable of carrying a substrate to be repaired, the substrate having a defective line; a carrying unit disposed between the electromagnetic wave emitting unit and the platform, the carrying unit carrying a repairing material, the repairing material receiving the electromagnetic wave provided by the electromagnetic wave transmitting unit to be transferred to the defective line; a fluid cooling unit that absorbs heat generated when the repair material is transferred to provide cooling, wherein the fluid cooling unit is a load unit cooling device disposed on the load bearing unit, the load unit cooling device A cooling air flow can be provided. 如申請專利範圍第5項所述之缺陷修補裝置,其中該氣流係可選擇為惰性氣體。 The defect repairing device of claim 5, wherein the gas flow is selected to be an inert gas. 如申請專利範圍第6項所述之缺陷修補裝置,其中該惰性氣體係可選擇為氦氣以及氖氣其中之一。 The defect repairing device of claim 6, wherein the inert gas system can be selected from one of helium and neon. 一種缺陷修補裝置,包括:一電磁波發射單元;一平台,其係可提供承載待修補之一基板,該基板上具有一缺陷線路;一承載單元,其係設置於該電磁波發射單元與該平台之間,該承載單元係承載有一修補材料,該修補材料可接收該電磁波發射單元所提供之電磁波,以轉移至該缺陷線路上;以及一流體冷卻單元,其係可吸收在轉移修補材料時所產生之熱,以提供冷卻,其中該流體冷卻單元係設置於該平台內,該流體冷卻單元具有循環迴路以提供一流體進行循環。 A defect repairing device comprising: an electromagnetic wave emitting unit; a platform for providing a substrate to be repaired, the substrate having a defective line; and a carrying unit disposed on the electromagnetic wave transmitting unit and the platform The carrying unit carries a repairing material that can receive electromagnetic waves provided by the electromagnetic wave transmitting unit to be transferred to the defective line; and a fluid cooling unit that can absorb the generated material when transferring the repairing material The heat is provided to provide cooling, wherein the fluid cooling unit is disposed within the platform, the fluid cooling unit having a circulation loop to provide a fluid for circulation. 如申請專利範圍第8項所述之缺陷修補裝置,其中該流體係可選擇為液體或者是氣體其中之一。 The defect repairing device of claim 8, wherein the flow system is selected to be one of a liquid or a gas. 一種缺陷修補裝置,包括:一電磁波發射單元;一平台,其係可提供承載待修補之一基板,該基板上具有一缺陷線路;一承載單元,其係設置於該電磁波發射單元與該平台之間,該承載單元係承載有一修補材料,該修補材料可接收該電磁波發射單元所提供之電磁波,以轉移至該缺陷線路上;以及一流體冷卻單元,其係可吸收在轉移修補材料時所產生之熱,以提供冷卻,其中該流體冷卻單元更具有:一保護氣簾單元,其係設置於該承載單元之周圍且具有複數個氣流通道,以提供一循環氣流於該基板以及該修補材料上;以及一承載單元冷卻裝置,其係設置於該承載單元上,該承載單元冷卻裝置可以提供一冷卻氣流。 A defect repairing device comprising: an electromagnetic wave emitting unit; a platform for providing a substrate to be repaired, the substrate having a defective line; and a carrying unit disposed on the electromagnetic wave transmitting unit and the platform The carrying unit carries a repairing material that can receive electromagnetic waves provided by the electromagnetic wave transmitting unit to be transferred to the defective line; and a fluid cooling unit that can absorb the generated material when transferring the repairing material The heat is provided to provide cooling, wherein the fluid cooling unit further comprises: a protective air curtain unit disposed around the carrying unit and having a plurality of air flow passages to provide a circulating airflow on the substrate and the repairing material; And a carrying unit cooling device disposed on the carrying unit, the carrying unit cooling device can provide a cooling airflow. 如申請專利範圍第10項所述之缺陷修補裝置,其中該循環氣流係可選擇為惰性氣體。 The defect repairing device of claim 10, wherein the circulating gas flow is selected to be an inert gas. 如申請專利範圍第11項所述之缺陷修補裝置,其中該惰性氣體係可選擇為氦氣以及氖氣其中之一。 The defect repairing device of claim 11, wherein the inert gas system can be selected from one of helium and neon. 如申請專利範圍第10項所述之缺陷修補裝置,其中該冷卻氣流係可選擇為惰性氣體。 The defect repairing device of claim 10, wherein the cooling air flow is selected to be an inert gas. 如申請專利範圍第13項所述之缺陷修補裝置,其中該 惰性氣體係可選擇為氦氣以及氖氣其中之一。 The defect repairing device of claim 13, wherein the defect repairing device The inert gas system can be selected from one of helium and neon. 一種缺陷修補裝置,包括:一電磁波發射單元;一平台,其係可提供承載待修補之一基板,該基板上具有一缺陷線路;一承載單元,其係設置於該電磁波發射單元與該平台之間,該承載單元係承載有一修補材料,該修補材料可接收該電磁波發射單元所提供之電磁波,以轉移至該缺陷線路上;以及一流體冷卻單元,其係可吸收在轉移修補材料時所產生之熱,以提供冷卻,其中該流體冷卻單元更具有:一保護氣簾單元,其係設置於該承載單元之周圍且具有複數個氣流通道,以提供一循環氣流於該基板以及該修補材料上;一承載單元冷卻裝置,其係設置於該承載單元上,該承載單元冷卻裝置可以提供一冷卻氣流;以及一平台冷卻單元,其係設置於該平台內,該平台冷卻單元具有循環迴路以提供一流體進行循環。 A defect repairing device comprising: an electromagnetic wave emitting unit; a platform for providing a substrate to be repaired, the substrate having a defective line; and a carrying unit disposed on the electromagnetic wave transmitting unit and the platform The carrying unit carries a repairing material that can receive electromagnetic waves provided by the electromagnetic wave transmitting unit to be transferred to the defective line; and a fluid cooling unit that can absorb the generated material when transferring the repairing material The heat is provided to provide cooling, wherein the fluid cooling unit further comprises: a protective air curtain unit disposed around the carrying unit and having a plurality of air flow passages to provide a circulating airflow on the substrate and the repairing material; a load bearing unit cooling device disposed on the load bearing unit, the load bearing unit cooling device can provide a cooling air flow; and a platform cooling unit disposed in the platform, the platform cooling unit having a circulation loop to provide a The fluid is circulated. 如申請專利範圍第15項所述之缺陷修補裝置,其中該循環氣流係可選擇為惰性氣體。 The defect repairing device of claim 15, wherein the circulating gas stream is selected to be an inert gas. 如申請專利範圍第16項所述之缺陷修補裝置,其中該惰性氣體係可選擇為氦氣以及氖氣其中之一。 The defect repairing device of claim 16, wherein the inert gas system can be selected from one of helium and neon. 如申請專利範圍第15項所述之缺陷修補裝置,其中該冷卻氣流係可選擇為惰性氣體。 The defect repairing device of claim 15, wherein the cooling air flow is selected to be an inert gas. 如申請專利範圍第18項所述之缺陷修補裝置,其中該惰性氣體係可選擇為氦氣以及氖氣其中之一。 The defect repairing device of claim 18, wherein the inert gas system is selected to be one of helium and neon. 如申請專利範圍第15項所述之缺陷修補裝置,其中該流體係可選擇為液體或者是氣體其中之一。 The defect repairing device of claim 15, wherein the flow system is selected to be one of a liquid or a gas. 一種缺陷修補裝置,包括:一電磁波發射單元;一平台,其係可提供承載待修補之一基板,該基板上具有一缺陷線路;一承載單元,其係設置於該電磁波發射單元與該平台之間,該承載單元係承載有一修補材料,該修補材料可接收該電磁波發射單元所提供之電磁波,以轉移至該缺陷線路上;以及一流體冷卻單元,其係可吸收在轉移修補材料時所產生之熱,以提供冷卻,其中該流體冷卻單元更具有:一保護氣簾單元,其係設置於該承載單元之周圍且具有複數個氣流通道,以提供一循環氣流於該基板以及該修補材料上;以及一平台冷卻單元,其係設置於該平台內,該平台冷卻單元具有循環迴路以提供一流體進行循環。 A defect repairing device comprising: an electromagnetic wave emitting unit; a platform for providing a substrate to be repaired, the substrate having a defective line; and a carrying unit disposed on the electromagnetic wave transmitting unit and the platform The carrying unit carries a repairing material that can receive electromagnetic waves provided by the electromagnetic wave transmitting unit to be transferred to the defective line; and a fluid cooling unit that can absorb the generated material when transferring the repairing material The heat is provided to provide cooling, wherein the fluid cooling unit further comprises: a protective air curtain unit disposed around the carrying unit and having a plurality of air flow passages to provide a circulating airflow on the substrate and the repairing material; And a platform cooling unit disposed within the platform, the platform cooling unit having a circulation loop to provide a fluid for circulation. 如申請專利範圍第21項所述之缺陷修補裝置,其中該循環氣流係可選擇為惰性氣體。 The defect repairing device of claim 21, wherein the circulating gas flow is selected to be an inert gas. 如申請專利範圍第22項所述之缺陷修補裝置,其中該惰性氣體係可選擇為氦氣以及氖氣其中之一。 The defect repairing device of claim 22, wherein the inert gas system is selected to be one of helium and neon. 如申請專利範圍第21項所述之缺陷修補裝置,其中該 流體係可選擇為液體或者是氣體其中之一。 The defect repairing device according to claim 21, wherein the defect repairing device The flow system can be selected as one of a liquid or a gas. 一種缺陷修補裝置,包括:一電磁波發射單元;一平台,其係可提供承載待修補之一基板,該基板上具有一缺陷線路;一承載單元,其係設置於該電磁波發射單元與該平台之間,該承載單元係承載有一修補材料,該修補材料可接收該電磁波發射單元所提供之電磁波,以轉移至該缺陷線路上;以及一流體冷卻單元,其係可吸收在轉移修補材料時所產生之熱,以提供冷卻,其中該流體冷卻單元更具有:一承載單元冷卻裝置,其係設置於該承載單元上,該承載單元冷卻裝置可以提供一冷卻氣流;以及一平台冷卻單元,其係設置於該平台內,該平台冷卻單元具有循環迴路以提供一流體進行循環。 A defect repairing device comprising: an electromagnetic wave emitting unit; a platform for providing a substrate to be repaired, the substrate having a defective line; and a carrying unit disposed on the electromagnetic wave transmitting unit and the platform The carrying unit carries a repairing material that can receive electromagnetic waves provided by the electromagnetic wave transmitting unit to be transferred to the defective line; and a fluid cooling unit that can absorb the generated material when transferring the repairing material The heat is provided to provide cooling, wherein the fluid cooling unit further comprises: a load bearing unit cooling device disposed on the load bearing unit, the load bearing unit cooling device can provide a cooling air flow; and a platform cooling unit configured Within the platform, the platform cooling unit has a circulation loop to provide a fluid for circulation. 如申請專利範圍第25項所述之缺陷修補裝置,其中該冷卻氣流係可選擇為惰性氣體。 The defect repairing device of claim 25, wherein the cooling air flow is selected to be an inert gas. 如申請專利範圍第26項所述之缺陷修補裝置,其中該惰性氣體係可選擇為氦氣以及氖氣其中之一。 The defect repairing device of claim 26, wherein the inert gas system is selected to be one of helium and neon. 如申請專利範圍第25項所述之缺陷修補裝置,其中該流體係可選擇為液體或者是氣體其中之一。 The defect repairing device of claim 25, wherein the flow system is selected to be one of a liquid or a gas. 如申請專利範圍第1項所述之缺陷修補裝置,其中該修補材料與該電磁波發射單元相對應之面上更設置有一光罩結構。 The defect repairing device of claim 1, wherein the repairing material is further provided with a reticle structure on a surface corresponding to the electromagnetic wave emitting unit. 如申請專利範圍第1項所述之缺陷修補裝置,其中該修補材料與該電磁波發射單元之間更設置有一光形調整單元。 The defect repairing device of claim 1, wherein the repairing material and the electromagnetic wave emitting unit are further provided with a light shape adjusting unit. 如申請專利範圍第30項所述之缺陷修補裝置,其中該光形調整單元可以聚焦該電磁波光束、增大該電磁波光束之面積或者是調整該電磁波光束之線形。 The defect repairing device of claim 30, wherein the light shape adjusting unit can focus the electromagnetic wave beam, increase an area of the electromagnetic wave beam, or adjust a linear shape of the electromagnetic wave beam. 如申請專利範圍第1項所述之缺陷修補裝置,其中該電磁波發射單元係可選擇為一全波段雷射光源以及紫外光波雷射其中之一。 The defect repairing device of claim 1, wherein the electromagnetic wave emitting unit is selected from the group consisting of a full-band laser light source and an ultraviolet light laser. 如申請專利範圍第1項所述之缺陷修補裝置,其中該修補材料係為一金屬材料。 The defect repairing device of claim 1, wherein the repairing material is a metal material. 如申請專利範圍第33項所述之缺陷修補裝置,其中該金屬材料係可選擇鎢、金、銀、銅、銀膠以及鉬材料其中之一。 The defect repairing device according to claim 33, wherein the metal material is one of tungsten, gold, silver, copper, silver glue and molybdenum material. 如申請專利範圍第1項所述之缺陷修補裝置,其中承載單元係更具有:一固定單元;以及一靶材結構,其係具有一承載板以提供承載該修補材料。 The defect repairing device of claim 1, wherein the carrying unit further comprises: a fixing unit; and a target structure having a carrier plate to provide the repairing material. 如申請專利範圍第35項所述之缺陷修補裝置,其中該固定單元係可利用真空吸附或者是夾持方式固定該承載板。 The defect repairing device of claim 35, wherein the fixing unit is capable of fixing the carrier plate by vacuum suction or clamping. 如申請專利範圍第35項所述之缺陷修補裝置,其中該承載板上更具有複數種之修補材料。 The defect repairing device of claim 35, wherein the carrier plate further has a plurality of repair materials. 如申請專利範圍第37項所述之缺陷修補裝置,其中該複數種修補材料可選擇環形陣列以及矩形陣列其中之一而排列於該承載板上。 The defect repairing device of claim 37, wherein the plurality of repair materials are arranged on the carrier plate by one of an annular array and a rectangular array. 一種靶材結構,包括:一承載板;以及複數種修補材料,其係形成於該承載板之一面上,其中該複數種修補材料可選擇環形陣列以及矩形陣列其中之一而排列於該承載板上。 A target structure includes: a carrier plate; and a plurality of repair materials formed on one surface of the carrier plate, wherein the plurality of repair materials are selected from the annular array and one of the rectangular arrays and arranged on the carrier plate on. 如申請專利範圍第39項所述之靶材結構,其中之一種修補材料係具有一金屬材料層。 A target structure as described in claim 39, wherein one of the repair materials has a metal material layer. 如申請專利範圍第40項所述之靶材結構,其中該金屬材料層之材料係可選擇為鎢、金、銀、銅、銀膠以及鉬其中之一。 The target structure according to claim 40, wherein the material of the metal material layer is selected from the group consisting of tungsten, gold, silver, copper, silver paste and molybdenum. 如申請專利範圍第40項所述之靶材結構,其中該承載板與該金屬材料層間更具有一層緩衝材料。 The target structure according to claim 40, wherein the carrier plate and the metal material layer further have a buffer material. 如申請專利範圍第42項所述之靶材結構,其中該緩衝材料係為一高分子材料。 The target structure as described in claim 42 wherein the buffer material is a polymer material. 如申請專利範圍第43項所述之靶材結構,其中該高分子材料係為聚二甲基矽氧烷(Polydimethylsiloxane,PDMS)。 The target structure according to claim 43, wherein the polymer material is polydimethylsiloxane (PDMS). 一種靶材結構,包括:一承載板;以及複數種修補材料,其係形成於該承載板之一面上,其中之一種修補材料更具有: 一中介層,其係形成於該承載板上;以及一金屬材料層,其係形成於該中介層上。 A target structure includes: a carrier plate; and a plurality of repair materials formed on one surface of the carrier plate, wherein one of the repair materials further comprises: An interposer formed on the carrier plate; and a metal material layer formed on the interposer. 如申請專利範圍第45項所述之靶材結構,其中該金屬材料層之材料係可選擇為鎢、金、銀、銅、銀膠以及鉬其中之一。 The target structure according to claim 45, wherein the material of the metal material layer is selected from the group consisting of tungsten, gold, silver, copper, silver glue and molybdenum. 如申請專利範圍第45項所述之靶材結構,其中該中介層之材係可吸收電磁波光源之能量或防止該金屬材料層氧化。 The target structure of claim 45, wherein the material of the interposer absorbs energy of the electromagnetic wave source or prevents oxidation of the metal material layer. 如申請專利範圍第45項所述之靶材結構,其中該中介層之材料係為鈦。 The target structure of claim 45, wherein the material of the interposer is titanium. 如申請專利範圍第45項所述之靶材結構,其中該中介層與該承載板間更具有一層緩衝層。 The target structure of claim 45, wherein the interposer has a buffer layer between the carrier and the carrier. 如申請專利範圍第49項所述之靶材結構,其中該緩衝材料係為一高分子材料。 The target structure as described in claim 49, wherein the buffer material is a polymer material. 如申請專利範圍第50項所述之靶材結構,其中該高分子材料係為聚二甲基矽氧烷(Polydimethylsiloxane,PDMS)。 The target structure according to claim 50, wherein the polymer material is polydimethylsiloxane (PDMS). 一種靶材結構,包括:一承載板;以及複數種修補材料,其係形成於該承載板之一面上,其中之一種修補材料具有:一中介層,其係形成於該承載板上;一金屬材料層,其係形成於該中介層上;以及一導電黏著層,其係形成於該金屬材料層上。 A target structure includes: a carrier plate; and a plurality of repair materials formed on one surface of the carrier plate, wherein one of the repair materials has: an interposer formed on the carrier plate; a metal a material layer formed on the interposer; and a conductive adhesive layer formed on the metal material layer. 如申請專利範圍第52項所述之靶材結構,其中該金屬材料層之材料係可選擇為鎢、金、銀、銅、銀膠以及鉬其中之一。 The target structure according to claim 52, wherein the material of the metal material layer is selected from the group consisting of tungsten, gold, silver, copper, silver glue and molybdenum. 如申請專利範圍第52項所述之靶材結構,其中該導電黏著層係可為一銀膠。 The target structure of claim 52, wherein the conductive adhesive layer is a silver paste. 如申請專利範圍第52項所述之靶材結構,其中該中介層之材係可吸收電磁波光源之能量或防止該金屬材料層氧化。 The target structure of claim 52, wherein the material of the interposer absorbs energy of the electromagnetic wave source or prevents oxidation of the metal material layer. 如申請專利範圍第52項所述之靶材結構,其中該中介層之材料係為鈦。 The target structure of claim 52, wherein the material of the interposer is titanium. 如申請專利範圍第52項所述之靶材結構,其中該中介層與該承載板間更具有一緩衝層。 The target structure of claim 52, wherein the interposer has a buffer layer between the interposer and the carrier. 如申請專利範圍第57項所述之靶材結構,其中該緩衝層係可為一高分子材料。 The target structure as described in claim 57, wherein the buffer layer is a polymer material. 如申請專利範圍第58項所述之靶材結構,其中該高分子材料係為聚二甲基矽氧烷(Polydimethylsiloxane,PDMS)。 The target structure according to claim 58, wherein the polymer material is polydimethylsiloxane (PDMS). 一種靶材結構,包括:一承載板;以及複數種修補材料,其係形成於該承載板之一面上,其中之一種修補材料具有:一金屬材料層,其係形成於該承載板上;以及一導電黏著層,其係形成於該金屬材料層上。 A target structure includes: a carrier plate; and a plurality of repair materials formed on one surface of the carrier plate, wherein one of the repair materials has: a metal material layer formed on the carrier plate; A conductive adhesive layer is formed on the metal material layer. 如申請專利範圍第60項所述之靶材結構,其中該金屬 材料層之材料係可選擇為鎢、金、銀、銅、銀膠以及鉬其中之一。 a target structure as described in claim 60, wherein the metal The material of the material layer may be selected from tungsten, gold, silver, copper, silver paste and molybdenum. 如申請專利範圍第60項所述之靶材結構,其中該導電黏著層係可為一銀膠。 The target structure of claim 60, wherein the conductive adhesive layer is a silver paste. 如申請專利範圍第60項所述之靶材結構,其中該金屬材料層與該承載板間更具有一緩衝層。 The target structure of claim 60, wherein the metal material layer and the carrier plate further have a buffer layer. 如申請專利範圍第63項所述之靶材結構,其中該緩衝層係可為一高分子材料。 The target structure according to claim 63, wherein the buffer layer is a polymer material. 如申請專利範圍第64項所述之靶材結構,其中該高分子材料係為聚二甲基矽氧烷(Polydimethylsiloxane,PDMS)。 The target structure according to claim 64, wherein the polymer material is polydimethylsiloxane (PDMS). 如申請專利範圍第5項所述之缺陷修補裝置,其中該修補材料與該電磁波發射單元相對應之面上更設置有一光罩結構。 The defect repairing device of claim 5, wherein the repairing material is further provided with a reticle structure on a surface corresponding to the electromagnetic wave emitting unit. 如申請專利範圍第5項所述之缺陷修補裝置,其中該修補材料與該電磁波發射單元之間更設置有一光形調整單元。 The defect repairing device of claim 5, wherein a light shape adjusting unit is further disposed between the repairing material and the electromagnetic wave emitting unit. 如申請專利範圍第67項所述之缺陷修補裝置,其中該光形調整單元可以聚焦該電磁波光束、增大該電磁波光束之面積或者是調整該電磁波光束之線形。 The defect repairing device of claim 67, wherein the light shape adjusting unit is capable of focusing the electromagnetic wave beam, increasing an area of the electromagnetic wave beam, or adjusting a linear shape of the electromagnetic wave beam. 如申請專利範圍第5項所述之缺陷修補裝置,其中該電磁波發射單元係可選擇為一全波段雷射光源以及紫外光波雷射其中之一。 The defect repairing device of claim 5, wherein the electromagnetic wave emitting unit is selected from the group consisting of a full-band laser light source and an ultraviolet light laser. 如申請專利範圍第5項所述之缺陷修補裝置,其中該 修補材料係為一金屬材料。 The defect repairing device of claim 5, wherein the defect repairing device The repair material is a metal material. 如申請專利範圍第70項所述之缺陷修補裝置,其中該金屬材料係可選擇鎢、金、銀、銅、銀膠以及鉬材料其中之一。 The defect repairing device according to claim 70, wherein the metal material is one of tungsten, gold, silver, copper, silver glue and molybdenum material. 如申請專利範圍第5項所述之缺陷修補裝置,其中承載單元係更具有:一固定單元;以及一靶材結構,其係具有一承載板以提供承載該修補材料。 The defect repairing device of claim 5, wherein the carrying unit further comprises: a fixing unit; and a target structure having a carrier plate to provide the repairing material. 如申請專利範圍第72項所述之缺陷修補裝置,其中該固定單元係可利用真空吸附或者是夾持方式固定該承載板。 The defect repairing device of claim 72, wherein the fixing unit is capable of fixing the carrier plate by vacuum suction or clamping. 如申請專利範圍第72項所述之缺陷修補裝置,其中該承載板上更具有複數種之修補材料。 The defect repairing device of claim 72, wherein the carrier board further comprises a plurality of repair materials. 如申請專利範圍第74項所述之缺陷修補裝置,其中該複數種修補材料可選擇環形陣列以及矩形陣列其中之一而排列於該承載板上。 The defect repairing device of claim 74, wherein the plurality of repair materials are arranged on the carrier plate by one of an annular array and a rectangular array. 如申請專利範圍第8項所述之缺陷修補裝置,其中該修補材料與該電磁波發射單元相對應之面上更設置有一光罩結構。 The defect repairing device of claim 8, wherein the repairing material is further provided with a reticle structure on a surface corresponding to the electromagnetic wave emitting unit. 如申請專利範圍第8項所述之缺陷修補裝置,其中該修補材料與該電磁波發射單元之間更設置有一光形調整單元。 The defect repairing device of claim 8, wherein the repairing material and the electromagnetic wave emitting unit are further provided with a light shape adjusting unit. 如申請專利範圍第77項所述之缺陷修補裝置,其中該 光形調整單元可以聚焦該電磁波光束、增大該電磁波光束之面積或者是調整該電磁波光束之線形。 The defect repairing device according to claim 77, wherein the defect repairing device The light adjustment unit may focus the electromagnetic wave beam, increase the area of the electromagnetic wave beam, or adjust the linear shape of the electromagnetic wave beam. 如申請專利範圍第8項所述之缺陷修補裝置,其中該電磁波發射單元係可選擇為一全波段雷射光源以及紫外光波雷射其中之一。 The defect repairing device of claim 8, wherein the electromagnetic wave emitting unit is selected from the group consisting of a full-band laser light source and an ultraviolet light laser. 如申請專利範圍第8項所述之缺陷修補裝置,其中該修補材料係為一金屬材料。 The defect repairing device of claim 8, wherein the repairing material is a metal material. 如申請專利範圍第80項所述之缺陷修補裝置,其中該金屬材料係可選擇鎢、金、銀、銅、銀膠以及鉬材料其中之一。 The defect repairing device of claim 80, wherein the metal material is one of tungsten, gold, silver, copper, silver glue and molybdenum material. 如申請專利範圍第8項所述之缺陷修補裝置,其中承載單元係更具有:一固定單元;以及一靶材結構,其係具有一承載板以提供承載該修補材料。 The defect repairing device of claim 8, wherein the carrying unit further comprises: a fixing unit; and a target structure having a carrier plate to provide the repairing material. 如申請專利範圍第82項所述之缺陷修補裝置,其中該固定單元係可利用真空吸附或者是夾持方式固定該承載板。 The defect repairing device of claim 82, wherein the fixing unit is capable of fixing the carrier plate by vacuum suction or clamping. 如申請專利範圍第82項所述之缺陷修補裝置,其中該承載板上更具有複數種之修補材料。 The defect repairing device of claim 82, wherein the carrier plate further comprises a plurality of repair materials. 如申請專利範圍第84項所述之缺陷修補裝置,其中該複數種修補材料可選擇環形陣列以及矩形陣列其中之一而排列於該承載板上。 The defect repairing device of claim 84, wherein the plurality of repair materials are arranged on the carrier plate by one of an annular array and a rectangular array. 如申請專利範圍第10項所述之缺陷修補裝置,其中該 修補材料與該電磁波發射單元相對應之面上更設置有一光罩結構。 The defect repairing device according to claim 10, wherein the defect repairing device The reticle structure is further disposed on the surface of the repairing material corresponding to the electromagnetic wave emitting unit. 如申請專利範圍第10項所述之缺陷修補裝置,其中該修補材料與該電磁波發射單元之間更設置有一光形調整單元。 The defect repairing device of claim 10, wherein a light shape adjusting unit is further disposed between the repairing material and the electromagnetic wave emitting unit. 如申請專利範圍第87項所述之缺陷修補裝置,其中該光形調整單元可以聚焦該電磁波光束、增大該電磁波光束之面積或者是調整該電磁波光束之線形。 The defect repairing device of claim 87, wherein the light shape adjusting unit can focus the electromagnetic wave beam, increase an area of the electromagnetic wave beam, or adjust a linear shape of the electromagnetic wave beam. 如申請專利範圍第10項所述之缺陷修補裝置,其中該電磁波發射單元係可選擇為一全波段雷射光源以及紫外光波雷射其中之一。 The defect repairing device of claim 10, wherein the electromagnetic wave emitting unit is selected from the group consisting of a full-band laser light source and an ultraviolet light laser. 如申請專利範圍第10項所述之缺陷修補裝置,其中該修補材料係為一金屬材料。 The defect repairing device of claim 10, wherein the repairing material is a metal material. 如申請專利範圍第90項所述之缺陷修補裝置,其中該金屬材料係可選擇鎢、金、銀、銅、銀膠以及鉬材料其中之一。 The defect repairing device of claim 90, wherein the metal material is one of tungsten, gold, silver, copper, silver glue and molybdenum material. 如申請專利範圍第10項所述之缺陷修補裝置,其中承載單元係更具有:一固定單元;以及一靶材結構,其係具有一承載板以提供承載該修補材料。 The defect repairing device of claim 10, wherein the carrying unit further comprises: a fixing unit; and a target structure having a carrier plate to provide the repairing material. 如申請專利範圍第92項所述之缺陷修補裝置,其中該固定單元係可利用真空吸附或者是夾持方式固定該承載板。 The defect repairing device of claim 92, wherein the fixing unit is capable of fixing the carrier plate by vacuum suction or clamping. 如申請專利範圍第92項所述之缺陷修補裝置,其中該承載板上更具有複數種之修補材料。 The defect repairing device of claim 92, wherein the carrier plate further has a plurality of repair materials. 如申請專利範圍第94項所述之缺陷修補裝置,其中該複數種修補材料可選擇環形陣列以及矩形陣列其中之一而排列於該承載板上。 The defect repairing device of claim 94, wherein the plurality of repair materials are arranged on the carrier plate by one of an annular array and a rectangular array. 如申請專利範圍第15項所述之缺陷修補裝置,其中該修補材料與該電磁波發射單元相對應之面上更設置有一光罩結構。 The defect repairing device of claim 15, wherein the repairing material is further provided with a reticle structure on a surface corresponding to the electromagnetic wave emitting unit. 如申請專利範圍第15項所述之缺陷修補裝置,其中該修補材料與該電磁波發射單元之間更設置有一光形調整單元。 The defect repairing device of claim 15, wherein the repairing material and the electromagnetic wave emitting unit are further provided with a light shape adjusting unit. 如申請專利範圍第97項所述之缺陷修補裝置,其中該光形調整單元可以聚焦該電磁波光束、增大該電磁波光束之面積或者是調整該電磁波光束之線形。 The defect repairing device of claim 97, wherein the light shape adjusting unit can focus the electromagnetic wave beam, increase an area of the electromagnetic wave beam, or adjust a linear shape of the electromagnetic wave beam. 如申請專利範圍第15項所述之缺陷修補裝置,其中該電磁波發射單元係可選擇為一全波段雷射光源以及紫外光波雷射其中之一。 The defect repairing device of claim 15, wherein the electromagnetic wave emitting unit is selected from the group consisting of a full-band laser light source and an ultraviolet light laser. 如申請專利範圍第15項所述之缺陷修補裝置,其中該修補材料係為一金屬材料。 The defect repairing device of claim 15, wherein the repairing material is a metal material. 如申請專利範圍第100項所述之缺陷修補裝置,其中該金屬材料係可選擇鎢、金、銀、銅、銀膠以及鉬材料其中之一。 The defect repairing device of claim 100, wherein the metal material is one of tungsten, gold, silver, copper, silver glue and molybdenum material. 如申請專利範圍第15項所述之缺陷修補裝置,其中承載單元係更具有: 一固定單元;以及一靶材結構,其係具有一承載板以提供承載該修補材料。 The defect repairing device of claim 15, wherein the carrying unit further comprises: a fixed unit; and a target structure having a carrier plate to provide the repair material. 如申請專利範圍第102項所述之缺陷修補裝置,其中該固定單元係可利用真空吸附或者是夾持方式固定該承載板。 The defect repairing device of claim 102, wherein the fixing unit is capable of fixing the carrier plate by vacuum suction or clamping. 如申請專利範圍第102項所述之缺陷修補裝置,其中該承載板上更具有複數種之修補材料。 The defect repairing device of claim 102, wherein the carrier plate further has a plurality of repair materials. 如申請專利範圍第104項所述之缺陷修補裝置,其中該複數種修補材料可選擇環形陣列以及矩形陣列其中之一而排列於該承載板上。 The defect repairing device of claim 104, wherein the plurality of repair materials are arranged on the carrier plate by one of an annular array and a rectangular array. 如申請專利範圍第21項所述之缺陷修補裝置,其中該修補材料與該電磁波發射單元相對應之面上更設置有一光罩結構。 The defect repairing device of claim 21, wherein the repairing material is further provided with a reticle structure on a surface corresponding to the electromagnetic wave emitting unit. 如申請專利範圍第21項所述之缺陷修補裝置,其中該修補材料與該電磁波發射單元之間更設置有一光形調整單元。 The defect repairing device of claim 21, wherein a light shape adjusting unit is further disposed between the repairing material and the electromagnetic wave emitting unit. 如申請專利範圍第107項所述之缺陷修補裝置,其中該光形調整單元可以聚焦該電磁波光束、增大該電磁波光束之面積或者是調整該電磁波光束之線形。 The defect repairing device of claim 107, wherein the light shape adjusting unit can focus the electromagnetic wave beam, increase an area of the electromagnetic wave beam, or adjust a linear shape of the electromagnetic wave beam. 如申請專利範圍第21項所述之缺陷修補裝置,其中該電磁波發射單元係可選擇為一全波段雷射光源以及紫外光波雷射其中之一。 The defect repairing device of claim 21, wherein the electromagnetic wave emitting unit is selected from the group consisting of a full-band laser light source and an ultraviolet light laser. 如申請專利範圍第21項所述之缺陷修補裝置,其中 該修補材料係為一金屬材料。 The defect repairing device according to claim 21, wherein The repair material is a metal material. 如申請專利範圍第110項所述之缺陷修補裝置,其中該金屬材料係可選擇鎢、金、銀、銅、銀膠以及鉬材料其中之一。 The defect repairing device of claim 110, wherein the metal material is one of tungsten, gold, silver, copper, silver glue and molybdenum material. 如申請專利範圍第21項所述之缺陷修補裝置,其中承載單元係更具有:一固定單元;以及一靶材結構,其係具有一承載板以提供承載該修補材料。 The defect repairing device of claim 21, wherein the carrying unit further comprises: a fixing unit; and a target structure having a carrier plate to provide the repairing material. 如申請專利範圍第112項所述之缺陷修補裝置,其中該固定單元係可利用真空吸附或者是夾持方式固定該承載板。 The defect repairing device according to claim 112, wherein the fixing unit is capable of fixing the carrier plate by vacuum suction or clamping. 如申請專利範圍第112項所述之缺陷修補裝置,其中該承載板上更具有複數種之修補材料。 The defect repairing device of claim 112, wherein the carrier plate further comprises a plurality of repair materials. 如申請專利範圍第114項所述之缺陷修補裝置,其中該複數種修補材料可選擇環形陣列以及矩形陣列其中之一而排列於該承載板上。 The defect repairing device of claim 114, wherein the plurality of repair materials are arranged on the carrier plate by one of an annular array and a rectangular array. 如申請專利範圍第25項所述之缺陷修補裝置,其中該修補材料與該電磁波發射單元相對應之面上更設置有一光罩結構。 The defect repairing device of claim 25, wherein the repairing material is further provided with a reticle structure on a surface corresponding to the electromagnetic wave emitting unit. 如申請專利範圍第25項所述之缺陷修補裝置,其中該修補材料與該電磁波發射單元之間更設置有一光形調整單元。 The defect repairing device of claim 25, wherein a light shape adjusting unit is further disposed between the repairing material and the electromagnetic wave emitting unit. 如申請專利範圍第117項所述之缺陷修補裝置,其中 該光形調整單元可以聚焦該電磁波光束、增大該電磁波光束之面積或者是調整該電磁波光束之線形。 For example, the defect repairing device described in claim 117, wherein The light shaping unit may focus the electromagnetic wave beam, increase the area of the electromagnetic wave beam, or adjust the linear shape of the electromagnetic wave beam. 如申請專利範圍第25項所述之缺陷修補裝置,其中該電磁波發射單元係可選擇為一全波段雷射光源以及紫外光波雷射其中之一。 The defect repairing device of claim 25, wherein the electromagnetic wave emitting unit is selected from the group consisting of a full-band laser light source and an ultraviolet light laser. 如申請專利範圍第25項所述之缺陷修補裝置,其中該修補材料係為一金屬材料。 The defect repairing device of claim 25, wherein the repairing material is a metal material. 如申請專利範圍第120項所述之缺陷修補裝置,其中該金屬材料係可選擇鎢、金、銀、銅、銀膠以及鉬材料其中之一。 The defect repairing device of claim 120, wherein the metal material is one of tungsten, gold, silver, copper, silver glue and molybdenum material. 如申請專利範圍第25項所述之缺陷修補裝置,其中承載單元係更具有:一固定單元;以及一靶材結構,其係具有一承載板以提供承載該修補材料。 The defect repairing device of claim 25, wherein the carrying unit further comprises: a fixing unit; and a target structure having a carrier plate to provide the repairing material. 如申請專利範圍第122項所述之缺陷修補裝置,其中該固定單元係可利用真空吸附或者是夾持方式固定該承載板。 The defect repairing device of claim 122, wherein the fixing unit is capable of fixing the carrier plate by vacuum suction or clamping. 如申請專利範圍第122項所述之缺陷修補裝置,其中該承載板上更具有複數種之修補材料。 The defect repairing device of claim 122, wherein the carrier plate further has a plurality of repair materials. 如申請專利範圍第124項所述之缺陷修補裝置,其中該複數種修補材料可選擇環形陣列以及矩形陣列其中之一而排列於該承載板上。 The defect repairing device of claim 124, wherein the plurality of repair materials are arranged on the carrier plate by one of an annular array and a rectangular array.
TW96111255A 2007-03-30 2007-03-30 Apparatus for repairing defects of circuit pattern and structure of target material TWI385273B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW96111255A TWI385273B (en) 2007-03-30 2007-03-30 Apparatus for repairing defects of circuit pattern and structure of target material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW96111255A TWI385273B (en) 2007-03-30 2007-03-30 Apparatus for repairing defects of circuit pattern and structure of target material

Publications (2)

Publication Number Publication Date
TW200839030A TW200839030A (en) 2008-10-01
TWI385273B true TWI385273B (en) 2013-02-11

Family

ID=44820692

Family Applications (1)

Application Number Title Priority Date Filing Date
TW96111255A TWI385273B (en) 2007-03-30 2007-03-30 Apparatus for repairing defects of circuit pattern and structure of target material

Country Status (1)

Country Link
TW (1) TWI385273B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102034394B1 (en) * 2018-09-17 2019-10-18 주식회사 코윈디에스티 Method for forming fine wiring using laser chemical vapor deposition
CN111446173A (en) * 2020-03-16 2020-07-24 林杰 Wiring broken wire repairing process

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031013A (en) * 1998-07-10 2000-01-28 Omron Corp Method and device for repairing circuit pattern and transfer plate for the circuit pattern repair
TWI260699B (en) * 2004-10-28 2006-08-21 Hynix Semiconductor Inc Apparatus for plasma chemical vapor deposition and method for fabricating semiconductor device by using the same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031013A (en) * 1998-07-10 2000-01-28 Omron Corp Method and device for repairing circuit pattern and transfer plate for the circuit pattern repair
TWI260699B (en) * 2004-10-28 2006-08-21 Hynix Semiconductor Inc Apparatus for plasma chemical vapor deposition and method for fabricating semiconductor device by using the same

Also Published As

Publication number Publication date
TW200839030A (en) 2008-10-01

Similar Documents

Publication Publication Date Title
US8673105B2 (en) Method of manufacturing translucent rigid substrate laminate and translucent rigid substrate bonding apparatus
US9242442B2 (en) Method of manufacturing translucent rigid substrate laminate and translucent rigid substrate bonding apparatus
US9358763B2 (en) Method of manufacturing translucent rigid substrate laminate and translucent rigid substrate bonding apparatus
US9061485B2 (en) Method of manufacturing translucent rigid substrate laminate
JP7188767B2 (en) laser reflow machine
TWI375256B (en) Light irradiation apparatus
TWI405731B (en) Method and apparatus for sealing a glass package
US9381727B2 (en) Method of manufacturing translucent rigid substrate laminate and translucent rigid substrate bonding apparatus
WO2013073067A1 (en) Method for producing organic el panel and device for sealing organic el panel
JPWO2010050209A1 (en) Method and apparatus for joining electronic component and flexible film substrate
KR20210062376A (en) Laser reflow apparatus and method thereof
JP2020129658A (en) Defective led removing device
KR20150083464A (en) Exposure apparatus and exposure method using the same
TWI385273B (en) Apparatus for repairing defects of circuit pattern and structure of target material
US20070151296A1 (en) Method and apparatus for handling and aligning glass substrates
TWI611469B (en) Multi-functional apparatus for testing and etching substrate and substrate processing apparatus including the same
JP2013524018A (en) Pad pattern repair device
KR20160004601A (en) System for manufacturing a semiconductor package and method of manufacturing the same
TWI731481B (en) Producing device of mask integrated frame
JP2008158545A (en) Proximity exposure apparatus and method for manufacturing substrate
TWI401487B (en) Structure and method for reparing defets of circuit pattern
KR102174930B1 (en) Laser pressure head module of laser reflow equipment
CN101276071A (en) Defect mending apparatus and target material structure
JP2022091504A (en) Laser irradiation system, substrate processing apparatus and substrate processing method
TW202001977A (en) Plasma system for substrate edge treatment and treatment method using the plasma system

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees