TWI401223B - Method of manufacturing an anti-glare glass - Google Patents
Method of manufacturing an anti-glare glass Download PDFInfo
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- TWI401223B TWI401223B TW99141117A TW99141117A TWI401223B TW I401223 B TWI401223 B TW I401223B TW 99141117 A TW99141117 A TW 99141117A TW 99141117 A TW99141117 A TW 99141117A TW I401223 B TWI401223 B TW I401223B
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- Prior art keywords
- glass substrate
- etchant
- coating layer
- ceramic coating
- roughness
- Prior art date
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- 239000011521 glass Substances 0.000 title claims description 160
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000000758 substrate Substances 0.000 claims description 141
- 239000011247 coating layer Substances 0.000 claims description 68
- 238000005524 ceramic coating Methods 0.000 claims description 66
- 230000003746 surface roughness Effects 0.000 claims description 61
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 51
- 239000000843 powder Substances 0.000 claims description 34
- 239000000919 ceramic Substances 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 21
- 239000002245 particle Substances 0.000 claims description 20
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 18
- 229910017604 nitric acid Inorganic materials 0.000 claims description 18
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 238000005507 spraying Methods 0.000 claims description 17
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 16
- 239000011259 mixed solution Substances 0.000 claims description 13
- 239000010410 layer Substances 0.000 claims description 9
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000007921 spray Substances 0.000 claims 1
- 230000004313 glare Effects 0.000 description 18
- 239000007789 gas Substances 0.000 description 10
- 239000011148 porous material Substances 0.000 description 10
- 230000002093 peripheral effect Effects 0.000 description 7
- 239000011324 bead Substances 0.000 description 5
- 239000004576 sand Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004381 surface treatment Methods 0.000 description 4
- 230000003685 thermal hair damage Effects 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- CAVCGVPGBKGDTG-UHFFFAOYSA-N alumanylidynemethyl(alumanylidynemethylalumanylidenemethylidene)alumane Chemical compound [Al]#C[Al]=C=[Al]C#[Al] CAVCGVPGBKGDTG-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000000395 magnesium oxide Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 206010037844 rash Diseases 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2204/00—Glasses, glazes or enamels with special properties
- C03C2204/08—Glass having a rough surface
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Surface Treatment Of Glass (AREA)
Description
實施例為關於製造防光眩玻璃之方法，尤其是關於防止玻璃基板產生光眩之製造防光眩玻璃之方法。The embodiment is a method for manufacturing an anti-glare glass, and more particularly to a method for producing an anti-glare glass for preventing light glare from a glass substrate.
一般而言，因光線反射而於玻璃基板上產生光眩。為了防止玻璃基板之光眩，玻璃基板之表面藉由各種方法來處理。In general, light glare is generated on a glass substrate due to light reflection. In order to prevent glare of the glass substrate, the surface of the glass substrate is treated by various methods.
首先，表面粗糙結構能藉由使用蝕刻劑(或蝕刻溶液)蝕刻玻璃基板之表面而形成於玻璃基板上。由表面粗糙結構所造成的漫反射能防止玻璃基板之光眩。然而，仍存在有難以控制玻璃基板之表面粗糙結構的粗糙度的問題。First, the surface roughness structure can be formed on the glass substrate by etching the surface of the glass substrate using an etchant (or an etching solution). The diffuse reflection caused by the surface roughness prevents the glare of the glass substrate. However, there is still a problem that it is difficult to control the roughness of the surface roughness of the glass substrate.
此外，能藉由貼附防光眩薄膜以折射玻璃基板之表面上的光線來防止光眩。然而，因高折射薄膜及低折射薄膜必須交錯貼附於玻璃基板，而可能增加玻璃基板的單位成本。Further, glare can be prevented by attaching an anti-glare film to refract light on the surface of the glass substrate. However, since the high refractive film and the low refractive film must be staggered to the glass substrate, the unit cost of the glass substrate may increase.
根據實施例之一方面，提供一種製造防光眩玻璃之方法。於製造防光眩玻璃之方法中，於玻璃基板上形成具有均勻厚度之陶瓷塗佈層。第一表面粗糙結構係藉由第一蝕刻劑來從玻璃基板分離陶瓷塗佈層，而形成於玻璃基板上，且第二表面粗糙結構係藉由第二蝕刻劑蝕刻玻璃基板，而形成於玻璃基板上。According to an aspect of an embodiment, a method of manufacturing an anti-glare glass is provided. In the method of manufacturing a light-proof glare glass, a ceramic coating layer having a uniform thickness is formed on a glass substrate. The first surface roughness structure is formed on the glass substrate by separating the ceramic coating layer from the glass substrate by the first etchant, and the second surface roughness structure is formed on the glass by etching the glass substrate by the second etchant. On the substrate.
於實施例中，陶瓷塗佈層能藉由熱噴塗層處理(thermal spray coating process)形成。In an embodiment, the ceramic coating layer can be formed by a thermal spray coating process.
於實施例中，於熱噴塗層處理中能調整陶瓷粉末之粒子尺寸，以控制第一表面粗糙結構的粗糙度。In an embodiment, the particle size of the ceramic powder can be adjusted in the thermal spray coating process to control the roughness of the first surface roughness.
於實施例中，陶瓷粉末之粒子尺寸能為約20微米(μm)至約30 μm。In an embodiment, the ceramic powder may have a particle size of from about 20 micrometers (μm) to about 30 μm.
於實施例中，陶瓷塗佈層之厚度能為約10 μm至約25 μm。In an embodiment, the ceramic coating layer can have a thickness of from about 10 μm to about 25 μm.
於實施例中，分離陶瓷塗佈層之步驟，能包含浸泡形成有陶瓷塗佈層之玻璃基板於第一蝕刻劑中，或者包含噴灑第一蝕刻劑至形成有陶瓷塗佈層之玻璃基板上。In an embodiment, the step of separating the ceramic coating layer may include immersing the glass substrate formed with the ceramic coating layer in the first etchant or spraying the first etchant onto the glass substrate on which the ceramic coating layer is formed. .
於實施例中，第一蝕刻劑能包含氫氟酸、硝酸及水的混合溶液，且氫氟酸、硝酸及水之重量百分比為約5～約10：約10～約30：約60～約85。In an embodiment, the first etchant can comprise a mixed solution of hydrofluoric acid, nitric acid and water, and the weight percentage of hydrofluoric acid, nitric acid and water is from about 5 to about 10: about 10 to about 30: about 60 to about 85.
於實施例中，蝕刻玻璃基板之步驟，能包含浸泡具有第一表面粗糙結構之玻璃基板於第二蝕刻劑中，或者包含噴灑第二蝕刻劑至具有第一表面粗糙結構之玻璃基板。In an embodiment, the step of etching the glass substrate may include immersing the glass substrate having the first surface roughness in the second etchant or spraying the second etchant to the glass substrate having the first surface roughness.
於實施例中，第二蝕刻劑能包含氫氟酸、鹽酸、硝酸及水的混合溶液，且氫氟酸、鹽酸、硝酸及水之重量百分比為約30～約70：約10～約20：約0.5～約5：約5～約59.5。In an embodiment, the second etchant can comprise a mixed solution of hydrofluoric acid, hydrochloric acid, nitric acid, and water, and the weight percentage of hydrofluoric acid, hydrochloric acid, nitric acid, and water is from about 30 to about 70: from about 10 to about 20: From about 0.5 to about 5: from about 5 to about 59.5.
於實施例中，第一表面粗糙結構能具有為約1 μm至約2 μm之十點平均粗糙度(ten point height of irregularity，Rz)，且第二表面粗糙結構能具有為約0.6 μm至約1.3 μm之十點平均粗糙度(Rz)。In an embodiment, the first surface roughness structure can have a ten point height of irregularity (Rz) of about 1 μm to about 2 μm, and the second surface roughness structure can have a thickness of about 0.6 μm to about Ten point average roughness (Rz) of 1.3 μm.
根據本發明之實施例，能藉由蝕刻經過熱噴塗層處理而形成之陶瓷塗佈層，而於玻璃基板之表面上形成第一表面粗糙結構。而且，能藉由蝕刻具有第一表面粗糙結構之玻璃基板，而於玻璃基板之表面上均勻地形成第二表面粗糙結構。因此，能防止玻璃基板之光眩。According to an embodiment of the present invention, the first surface roughness can be formed on the surface of the glass substrate by etching the ceramic coating layer formed by the thermal spray coating treatment. Moreover, the second surface roughness can be uniformly formed on the surface of the glass substrate by etching the glass substrate having the first surface roughness. Therefore, the glare of the glass substrate can be prevented.
更甚者，能藉由調整熱噴塗層處理中之陶瓷粉末之粒子尺寸，而輕易控制玻璃基板上之表面粗糙結構的粗糙度。Furthermore, the roughness of the surface roughness on the glass substrate can be easily controlled by adjusting the particle size of the ceramic powder in the thermal spray coating treatment.
從以下詳述之實施方式結合後附圖式，將更清楚瞭解示範的實施例。Exemplary embodiments will be more clearly understood from the following detailed description of the embodiments.
各種實施例將參照後附圖式於此後更加充分描述，圖式中顯示一些實施例。然而，本發明能以許多不同的形式實施，而不應解釋為限定於提出於此之實施例。相反地，提供此些實施例以使揭露內容將詳盡且完整，並將充分傳達本發明之範疇給熟習此項技藝者。為求簡明，可能誇大圖式中層及區域之尺寸及相對尺寸。Various embodiments will be described more fully hereinafter with reference to the accompanying drawings in which FIG. However, the invention can be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, the embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. For the sake of brevity, the dimensions and relative dimensions of the layers and regions in the drawing may be exaggerated.
將瞭解到，雖然於此能使用術語第一、第二等術語以描述各種元件、部件、區域、層及/或區塊，此些元件、部件、區域、層及/或區塊不應受限由此些術語。此些術語僅用於分別一個元件、部件、區域、層或區塊與另一個元件、部件、區域、層或區塊。因此，在不悖離本發明之教示下，討論如下之第一元件、部件、區域、層或區塊，能稱為第二元件、部件、區域、層或區塊。It will be appreciated that, although the terms first, second, etc. may be used to describe various elements, components, regions, layers and/or blocks, such elements, components, regions, layers and/or blocks are not subject to Limit these terms. The terms are used to refer to a single element, component, region, layer or block, and another element, component, region, layer or block. Therefore, a first element, component, region, layer or layer may be referred to as a second element, component, region, layer or block, without departing from the teachings of the invention.
使用於此之術語，僅用於描述特定實施例之目的，而非有意於限定本發明。除非上下文中清楚註明，否則此處所用之單數形式「一」及「此」，亦有意於包含複數形式。更將理解用於此說明書中之術語「包括」及/或「包含」指出所敘述之特徵、整合、步驟、操作、元件及/或部件之存在，但並非排除一個多個特徵、整合、步驟、操作、元件、組件及/或其組合之存在。The terminology used herein is for the purpose of describing particular embodiments, and is not intended to The singular forms "a" and "the" are used in the s It is to be understood that the terms "comprises" and "comprising", "comprises" The existence of operations, components, components, and/or combinations thereof.
除非另外定義，於此使用之所有術語(包含技術及科學術語)，係與本發明所屬技術領域具通常知識者所瞭解之意義相同。除非於此特別定義，否則將進一步瞭解到，例如由普通字典所定義之術語，應解釋為具有與相關技藝之上下文中之意義一致的意義，而將不解釋為理想化或過度正式之意思。Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning meaning Unless specifically defined herein, it will be further appreciated that terms such as those defined by ordinary dictionaries should be interpreted as having a meaning consistent with the meaning in the context of the related art, and are not to be construed as idealized or overly formal.
此後，將參照所附圖式而詳加說明各個實施例。Hereinafter, various embodiments will be described in detail with reference to the drawings.
第1圖繪示用以說明本發明一實施例之製造防光眩玻璃之方法之流程圖。而且，第2至6圖繪示用以說明第1圖中之製造防光眩玻璃之方法之剖視圖。FIG. 1 is a flow chart for explaining a method of manufacturing an anti-glare glass according to an embodiment of the present invention. Further, FIGS. 2 to 6 are cross-sectional views for explaining the method of manufacturing the antiglare glass in FIG. 1.
請參照第1及2圖，電漿槍10能包含陰極12、陽極14、外圍件15、支撐件16及粉末入口17。電漿氣體經過形成於電漿槍10內之氣體入口11而被注入。電漿氣體能例如為氬氣、氦氣等之惰性氣體(inert gas)，或者例如為氫氣、氧氣等之非活性氣體(inactive gas)。惰性氣體及非活性氣體能單獨使用或混合使用。Referring to Figures 1 and 2, the plasma gun 10 can include a cathode 12, an anode 14, a peripheral member 15, a support member 16, and a powder inlet 17. The plasma gas is injected through a gas inlet 11 formed in the plasma gun 10. The plasma gas can be, for example, an inert gas such as argon gas or helium gas, or an inert gas such as hydrogen gas or oxygen gas. The inert gas and the inert gas can be used singly or in combination.
於一實施例中，氣體入口11能形成於外圍件15及陰極12之間，且能延伸至由陽極14形成的狹窄空間。注入於氣體入口11內之電漿氣體能藉由產生於陰極12及陽極14之間之高壓AC高電源，而被轉換為電漿火花18，且此時，電漿火花18能從電漿槍10噴發。In one embodiment, the gas inlet 11 can be formed between the peripheral member 15 and the cathode 12 and can extend to a narrow space formed by the anode 14. The plasma gas injected into the gas inlet 11 can be converted to a plasma spark 18 by a high voltage AC high power source generated between the cathode 12 and the anode 14, and at this time, the plasma spark 18 can be pumped from the plasma gun. 10 eruptions.
於此，高壓AC高電源能具有足以將電漿氣體轉換為電漿火花18之高數值。於一實施例中，能施加約30KV至約100KV之電壓，以及約400A至約1000A之電流。Here, the high voltage AC high power source can have a high value sufficient to convert the plasma gas to the plasma spark 18. In one embodiment, a voltage of from about 30 KV to about 100 KV, and a current of from about 400 A to about 1000 A can be applied.
如第2圖所示，陰極12之頂端能為銳利的形狀，以易於產生電漿火花18。進一步而言，陰極12之頂端能包含具有高強度及硬度之金屬，如鎢或鎢強化金屬等金屬，以防止如由產生電漿火花18所造成之侵蝕的傷害。As shown in Fig. 2, the tip end of the cathode 12 can be sharply shaped to facilitate the generation of the plasma spark 18. Further, the top end of the cathode 12 can contain a metal having high strength and hardness, such as a metal such as tungsten or tungsten reinforced metal, to prevent damage caused by the erosion caused by the plasma spark 18.
一般而言，能使用如銅或銅合金之導電材料來形成陽極14。此外，冷卻通道13能形成於陽極14的內部，而使得施加於陽極14之熱能夠經由冷卻通道13往外部發散。因此，能藉由冷卻通道13將陽極14之熱傷害減到最小，因而能延長陽極14之使用壽命。In general, the anode 14 can be formed using a conductive material such as copper or a copper alloy. Further, the cooling passage 13 can be formed inside the anode 14, so that heat applied to the anode 14 can be diverged to the outside via the cooling passage 13. Therefore, the thermal damage of the anode 14 can be minimized by the cooling passage 13, thereby extending the service life of the anode 14.
外圍件15能位於電漿槍10之外部，且陰極12能位於外部件15之內部。外圍件15能支撐陽極14。亦能使用將由產生電漿火花18所造成之熱傷害降至最低之材料，來形成外圍件15。The peripheral member 15 can be located outside of the plasma gun 10, and the cathode 12 can be located inside the outer member 15. The peripheral member 15 can support the anode 14. The peripheral member 15 can also be formed using a material that minimizes thermal damage caused by the generation of the plasma spark 18.
支撐件16能結合至外圍件15之一側，且粉末入口17能位於支撐件16中。陶瓷粉末能經由粉末入口17供應至電漿火花18。經由粉末入口17供應至電漿火花18之陶瓷粉末，能熔化並噴灑至面對電漿槍10之玻璃基板100上。The support member 16 can be coupled to one side of the peripheral member 15 and the powder inlet 17 can be positioned in the support member 16. The ceramic powder can be supplied to the plasma spark 18 via the powder inlet 17. The ceramic powder supplied to the plasma spark 18 via the powder inlet 17 can be melted and sprayed onto the glass substrate 100 facing the plasma gun 10.
經噴灑之陶瓷粉末能貼附於玻璃基板100上，以形成陶瓷塗佈層110(步驟S110)。陶瓷塗佈層110能形成於玻璃基板100之一側上，或者倘若需要的話，能於玻璃基板100之二側上皆形成陶瓷塗佈層110。The sprayed ceramic powder can be attached to the glass substrate 100 to form the ceramic coating layer 110 (step S110). The ceramic coating layer 110 can be formed on one side of the glass substrate 100 or, if necessary, a ceramic coating layer 110 can be formed on both sides of the glass substrate 100.
能沿著平行於玻璃基板100之形成塗佈層之表面的方向，以特定距離移動電漿槍10，以形成陶瓷塗佈層110。當距離大於約5毫米(mm)時，陶瓷塗佈層110可能不會局部形成於玻璃基板100上。當距離小於約3 mm時，陶瓷塗佈層110可能會重疊。亦即，陶瓷塗佈層110可能不會以均勻的厚度形成。因此，能以約3至約5 mm之距離移動電漿槍10，以形成具均勻厚度之陶瓷塗佈層110。The plasma gun 10 can be moved at a specific distance in a direction parallel to the surface of the glass substrate 100 where the coating layer is formed to form the ceramic coating layer 110. When the distance is greater than about 5 millimeters (mm), the ceramic coating layer 110 may not be partially formed on the glass substrate 100. When the distance is less than about 3 mm, the ceramic coating layers 110 may overlap. That is, the ceramic coating layer 110 may not be formed in a uniform thickness. Thus, the plasma gun 10 can be moved at a distance of from about 3 to about 5 mm to form a ceramic coating layer 110 having a uniform thickness.
當從電漿槍10噴灑之陶瓷粉末之速度大於約18000 cm/min時，陶瓷塗佈層110可能不會局部形成於玻璃基板100上。當從電漿槍10噴灑之陶瓷粉末之速度小於約4000 cm/min時，陶瓷塗佈層110可能會重疊。亦即，陶瓷塗佈層110可能不會以均勻的厚度形成。因此，從電漿槍10噴灑之陶瓷粉末之速度能為約4000至約18000 cm/min，以形成具均勻厚度之陶瓷塗佈層110。When the speed of the ceramic powder sprayed from the plasma gun 10 is greater than about 18000 cm/min, the ceramic coating layer 110 may not be partially formed on the glass substrate 100. When the speed of the ceramic powder sprayed from the plasma gun 10 is less than about 4000 cm/min, the ceramic coating layers 110 may overlap. That is, the ceramic coating layer 110 may not be formed in a uniform thickness. Therefore, the speed of the ceramic powder sprayed from the plasma gun 10 can be from about 4,000 to about 18,000 cm/min to form the ceramic coating layer 110 having a uniform thickness.
當電漿槍10及玻璃基板100之間的距離大於約50 cm時，陶瓷塗佈層110可能不會局部形成於玻璃基板100上。當電漿槍10及玻璃基板100之間的距離小於約10 cm時，陶瓷塗佈層110可能會重疊。亦即，陶瓷塗佈層110可能不會以均勻的厚度形成。此外，當電漿槍10及玻璃基板100之間的距離小於約10 cm時，玻璃基板100可能會因熔化的陶瓷粉末所造成之熱衝擊而導致其受損。因此，電漿槍10及玻璃基板100之間的距離能為約10 cm至約50 cm，以形成具均勻厚度之陶瓷塗佈層110且防止熱傷害。When the distance between the plasma gun 10 and the glass substrate 100 is greater than about 50 cm, the ceramic coating layer 110 may not be partially formed on the glass substrate 100. When the distance between the plasma gun 10 and the glass substrate 100 is less than about 10 cm, the ceramic coating layers 110 may overlap. That is, the ceramic coating layer 110 may not be formed in a uniform thickness. Further, when the distance between the plasma gun 10 and the glass substrate 100 is less than about 10 cm, the glass substrate 100 may be damaged by thermal shock caused by the molten ceramic powder. Therefore, the distance between the plasma gun 10 and the glass substrate 100 can be from about 10 cm to about 50 cm to form the ceramic coating layer 110 having a uniform thickness and to prevent thermal damage.
一般而言，陶瓷粉末能包含非金屬礦物之粉末，以形成塗佈層。陶瓷粉末之範例能包含氧化鋁(Al2 O3 )、氧化釔(Y2 O3 )、氧化鋯(ZrO2 )、碳化鋁(AlC)、氮化鈦(TiN)、氮化鋁(AlN)、碳化鈦(TiC)、氧化鎂(MgO)、氧化鈣(CaO)、氧化鈰(CeO2 )、二氧化鈦(TiO2 )、碳化硼(Bx Cy )、氮化硼(BN)、二氧化矽(SiO2 )、碳化矽(SiC)、釔鋁石榴石(Yttrium aluminium garnet，YAG)、富鋁紅柱石(mullite)、氟化鋁(AlF3 )等材料。此些材料能單獨使用或混合使用。In general, the ceramic powder can comprise a powder of a non-metallic mineral to form a coating layer. Examples of ceramic powders can include alumina (Al 2 O 3 ), yttrium oxide (Y 2 O 3 ), zirconia (ZrO 2 ), aluminum carbide (AlC), titanium nitride (TiN), aluminum nitride (AlN). Titanium carbide (TiC), magnesium oxide (MgO), calcium oxide (CaO), cerium oxide (CeO 2 ), titanium dioxide (TiO 2 ), boron carbide (B x C y ), boron nitride (BN), dioxide Materials such as yttrium (SiO 2 ), tantalum carbide (SiC), Yttrium aluminium garnet (YAG), mullite, and aluminum fluoride (AlF 3 ). These materials can be used alone or in combination.
雖然陶瓷粉末之尺寸能控制成各種尺寸，然而，於一實施例中，陶瓷粉末之尺寸較佳能為約20 μm至約30 μm。Although the size of the ceramic powder can be controlled to various sizes, in one embodiment, the ceramic powder preferably has a size of from about 20 μm to about 30 μm.
陶瓷塗佈層110能藉由使用電漿槍10之熱噴塗層處理形成，且因此陶瓷塗佈層110能具有均勻的厚度。陶瓷塗佈層110之厚度能為約10 μm至約25 μm。The ceramic coating layer 110 can be formed by using a thermal spray coating of the plasma gun 10, and thus the ceramic coating layer 110 can have a uniform thickness. The ceramic coating layer 110 can have a thickness of from about 10 μm to about 25 μm.
當陶瓷塗佈層110之厚度大於約25 μm時，陶瓷塗佈層110可能從玻璃基板100分離。尤其假使玻璃基板100之表面粗糙結構的粗糙度為低的話，陶瓷塗佈層110很可能從玻璃基板100分離。When the thickness of the ceramic coating layer 110 is greater than about 25 μm, the ceramic coating layer 110 may be separated from the glass substrate 100. In particular, if the roughness of the surface roughness of the glass substrate 100 is low, the ceramic coating layer 110 is likely to be separated from the glass substrate 100.
當陶瓷塗佈層110之厚度小於約10 μm時，陶瓷塗佈層110會太薄而無法於玻璃基板100上形成均勻的厚度。尤其當玻璃基板100之表面粗糙結構的粗糙度為低的話，因陶瓷塗佈層110及玻璃基板100之間之黏著強度之降低，陶瓷塗佈層110可能不會均勻形成。When the thickness of the ceramic coating layer 110 is less than about 10 μm, the ceramic coating layer 110 may be too thin to form a uniform thickness on the glass substrate 100. In particular, when the roughness of the surface roughness of the glass substrate 100 is low, the ceramic coating layer 110 may not be uniformly formed due to a decrease in the adhesion strength between the ceramic coating layer 110 and the glass substrate 100.
當陶瓷塗佈層110不具有均勻的厚度時，於後續的蝕刻處理中，於陶瓷塗佈層110之相對薄的部分及相對厚的部分之間，可能會產生蝕刻速度之差異。因此，玻璃基板100之表面於陶瓷塗佈層110之相對薄的部分，可能會被過度地蝕刻，使得十點平均粗糙度(ten point height of irregularities，Rz)可能不會在所想要的等級中。十點平均粗糙度(Rz)意指沿著輪廓的評估長度的五個最高峰之平均高度及五個最低凹處之平均高度之間的差異。進一步言之，因於玻璃基板100的每個部分之十點平均粗糙度(Rz)為相異的，故玻璃基板100上之反射率可能會局部變高。因此，可能會產生光眩，或者玻璃基板100可能會霧化。When the ceramic coating layer 110 does not have a uniform thickness, a difference in etching speed may occur between the relatively thin portion and the relatively thick portion of the ceramic coating layer 110 in the subsequent etching treatment. Therefore, the surface of the glass substrate 100 on the relatively thin portion of the ceramic coating layer 110 may be excessively etched, so that the ten point height of irregularities (Rz) may not be at the desired level. in. The ten point average roughness (Rz) means the difference between the average height of the five highest peaks along the estimated length of the profile and the average height of the five lowest recesses. Further, since the ten-point average roughness (Rz) of each portion of the glass substrate 100 is different, the reflectance on the glass substrate 100 may locally become high. Therefore, glare may occur, or the glass substrate 100 may be fogged.
陶瓷塗佈層110能藉由陶瓷粉末之粒子尺寸而具有表面粗糙結構。當陶瓷粉末之粒子尺寸為大時，則表面粗糙結構的粗糙度會變高。當陶瓷粉末之粒子尺寸為小時，則表面粗糙結構的粗糙度會變低。於一實施例中，陶瓷塗佈層110之表面粗糙度能具有約2 μm至約5 μm之算術平均粗糙度(arithmetical average roughness，Ra值)。算術平均粗糙度意指從中央線至輪廓曲線之平均高度。當表面粗糙結構之算術平均粗糙度小於約2 μm時，可能難以於玻璃基板100之表面上形成粗糙結構。當表面粗糙結構之算術平均粗糙度大於約5 μm時，玻璃基板100之反射率會降低，而能夠抑制光眩產生。然而，當Ra值大於約5 μm時，可能會因玻璃基板100上之粗糙度過高而使玻璃基板100霧化。The ceramic coating layer 110 can have a surface roughness structure by the particle size of the ceramic powder. When the particle size of the ceramic powder is large, the roughness of the surface roughness structure becomes high. When the particle size of the ceramic powder is small, the roughness of the surface roughness structure becomes low. In one embodiment, the surface roughness of the ceramic coating layer 110 can have an arithmetic mean roughness (Ra value) of from about 2 μm to about 5 μm. The arithmetic mean roughness means the average height from the center line to the contour curve. When the arithmetic mean roughness of the surface roughness is less than about 2 μm, it may be difficult to form a roughness on the surface of the glass substrate 100. When the arithmetic mean roughness of the surface roughness is more than about 5 μm, the reflectance of the glass substrate 100 is lowered, and generation of light glare can be suppressed. However, when the Ra value is more than about 5 μm, the glass substrate 100 may be atomized due to excessive roughness on the glass substrate 100.
此外，陶瓷塗佈層110之細孔(pore)孔徑能根據表面粗糙結構的粗糙度而有所不同。於一實施例中，當表面粗糙結構的粗糙度為高時，陶瓷粉末之粒子尺寸能為大，以使細孔孔徑能變大。於另一實施例中，當表面粗糙結構的粗糙度為低時，陶瓷粉末之粒子尺寸能為小，以使細孔孔徑能變小。Further, the pore diameter of the ceramic coating layer 110 can vary depending on the roughness of the surface roughness structure. In one embodiment, when the roughness of the surface roughness is high, the particle size of the ceramic powder can be made large so that the pore diameter of the pores can be increased. In another embodiment, when the roughness of the surface roughness is low, the particle size of the ceramic powder can be made small to make the pore diameter of the pores small.
還能藉由調整供應至電漿槍10之陶瓷粉末之粒子尺寸，來控制陶瓷塗佈層110之表面粗糙結構的粗糙度。於一實施例中，當供應至電漿槍10之陶瓷粉末之粒子尺寸為小時，陶瓷塗佈層110之表面粗糙結構的粗糙度能為低。相反地，當供應至電漿槍10之陶瓷粉末之粒子尺寸為大時，陶瓷塗佈層110之表面粗糙結構的粗糙度能為高。The roughness of the surface roughness of the ceramic coating layer 110 can also be controlled by adjusting the particle size of the ceramic powder supplied to the plasma gun 10. In one embodiment, when the particle size of the ceramic powder supplied to the plasma gun 10 is small, the roughness of the surface roughness of the ceramic coating layer 110 can be low. Conversely, when the particle size of the ceramic powder supplied to the plasma gun 10 is large, the roughness of the surface roughness of the ceramic coating layer 110 can be high.
因藉由熔化的陶瓷粉末在形成陶瓷塗佈層110期間所造成之熱傷害，於陶瓷塗佈層110及玻璃基板100之間之介面上可能產生微小的裂痕。當增加陶瓷粉末之尺寸且增加陶瓷粉末之噴灑速度時，裂痕的尺寸也會增加。Due to the thermal damage caused by the molten ceramic powder during the formation of the ceramic coating layer 110, minute cracks may be generated at the interface between the ceramic coating layer 110 and the glass substrate 100. When the size of the ceramic powder is increased and the spraying speed of the ceramic powder is increased, the size of the crack is also increased.
請參照第1及3至5圖，第一蝕刻劑20能供應至形成有陶瓷塗佈層110之玻璃基板100。Referring to FIGS. 1 and 3 to 5, the first etchant 20 can be supplied to the glass substrate 100 on which the ceramic coating layer 110 is formed.
第一蝕刻劑20能為包括氫氟酸(Hydrofluoric Acid，HF)之混合溶液。於一實施例中，第一蝕刻劑20能為氫氟酸水溶液。於另一實施例中，第一蝕刻劑20能為氫氟酸、硝酸及水的混合溶液。於此，氫氟酸、硝酸及水之重量百分比能為約5～約10：約10～約30：約60～約85。The first etchant 20 can be a mixed solution including hydrofluoric acid (HF). In an embodiment, the first etchant 20 can be an aqueous solution of hydrofluoric acid. In another embodiment, the first etchant 20 can be a mixed solution of hydrofluoric acid, nitric acid, and water. Here, the weight percentage of hydrofluoric acid, nitric acid and water can be from about 5 to about 10: from about 10 to about 30: from about 60 to about 85.
於一實施例中，如第3圖所示，能藉由浸泡玻璃基板100於包含第一蝕刻劑20之容器30內，而將第一蝕刻劑20供應至玻璃基板100。當第一蝕刻劑20為氫氟酸、硝酸及水之混合溶液時，能浸泡玻璃基板100於第一蝕刻劑20之內持續約10分鐘至約300分鐘的時間。於另一實施例中，如第4圖所示，能藉由噴嘴40噴灑第一蝕刻劑20，而將第一蝕刻劑20供應至玻璃基板100。於此，玻璃基板100垂直立起，且第一蝕刻劑20能從複數個噴嘴40均勻地供應至玻璃基板100。In one embodiment, as shown in FIG. 3, the first etchant 20 can be supplied to the glass substrate 100 by immersing the glass substrate 100 in the container 30 containing the first etchant 20. When the first etchant 20 is a mixed solution of hydrofluoric acid, nitric acid and water, the glass substrate 100 can be immersed in the first etchant 20 for a period of time of about 10 minutes to about 300 minutes. In another embodiment, as shown in FIG. 4, the first etchant 20 can be supplied to the glass substrate 100 by spraying the first etchant 20 through the nozzles 40. Here, the glass substrate 100 stands upright, and the first etchant 20 can be uniformly supplied from the plurality of nozzles 40 to the glass substrate 100.
第一蝕刻劑20能經由陶瓷塗佈層110之細孔及裂縫，滲透至形成有陶瓷塗佈層110之玻璃基板100之表面。The first etchant 20 can penetrate the surface of the glass substrate 100 on which the ceramic coating layer 110 is formed via the pores and cracks of the ceramic coating layer 110.
細孔係散佈於陶瓷塗佈層110各處，且裂縫係散佈於陶瓷塗佈層110及玻璃基板100之間之介面，以使第一蝕刻劑20之氟(fluorine，F)能經由細孔及裂縫滲透而蝕刻玻璃基板100之表面。因此，有細孔及裂痕之部分的玻璃基板100能被蝕刻得相對較多，且沒有細孔及裂痕之部分的玻璃基板100能被蝕刻得相對較少。陶瓷塗佈層110能藉由蝕刻玻璃基板100而與玻璃基板100分離。The pores are dispersed throughout the ceramic coating layer 110, and the cracks are interspersed between the interface between the ceramic coating layer 110 and the glass substrate 100, so that the fluorine (F) of the first etchant 20 can pass through the pores. And the crack penetrates to etch the surface of the glass substrate 100. Therefore, the glass substrate 100 having a portion of fine pores and cracks can be etched relatively more, and the glass substrate 100 having no pores and cracks can be etched relatively little. The ceramic coating layer 110 can be separated from the glass substrate 100 by etching the glass substrate 100.
當陶瓷塗佈層110包含與玻璃基板100相同的材料時，能同時蝕刻陶瓷塗佈層110及玻璃基板110。When the ceramic coating layer 110 contains the same material as the glass substrate 100, the ceramic coating layer 110 and the glass substrate 110 can be simultaneously etched.
於此，藉由第一蝕刻劑20蝕刻且分離之陶瓷塗佈層110及玻璃基板110之厚度的總和，能為約50μm至約300μm。Here, the sum of the thicknesses of the ceramic coating layer 110 and the glass substrate 110 etched and separated by the first etchant 20 can be from about 50 μm to about 300 μm.
因玻璃基板100能藉由浸泡於第一蝕刻劑20內或藉由噴灑第一蝕刻劑20，而均勻地與第一蝕刻劑20接觸，故能均勻地蝕刻玻璃基板100。Since the glass substrate 100 can be uniformly contacted with the first etchant 20 by being immersed in the first etchant 20 or by spraying the first etchant 20, the glass substrate 100 can be uniformly etched.
因此，能藉由蝕刻玻璃基板100來分離陶瓷塗佈層110，而於形成有陶瓷塗佈層110之表面上形成第一表面粗糙結構120(步驟S120)。Therefore, the ceramic coating layer 110 can be separated by etching the glass substrate 100, and the first surface roughness 120 can be formed on the surface on which the ceramic coating layer 110 is formed (step S120).
於此，第一表面粗糙結構120之十點平均粗糙度(Rz)較佳能為約1 μm至約2 μm。當十點平均粗糙度(Rz)小於約1 μm或大於約2 μm時，於後續的蝕刻處理中，可能難以於玻璃基板100上形成所想要的粗糙結構。Here, the ten-point average roughness (Rz) of the first surface roughness 120 may preferably be from about 1 μm to about 2 μm. When the ten point average roughness (Rz) is less than about 1 μm or more than about 2 μm, it may be difficult to form a desired roughness on the glass substrate 100 in the subsequent etching treatment.
因未形成陶瓷塗佈層110之玻璃基板100之表面藉由第一蝕刻劑20被均勻地蝕刻，而能減少玻璃基板100之厚度。Since the surface of the glass substrate 100 on which the ceramic coating layer 110 is not formed is uniformly etched by the first etchant 20, the thickness of the glass substrate 100 can be reduced.
請參照第1及6圖，第二蝕刻劑能供應至具有第一表面粗糙結構120之玻璃基板100。Referring to FIGS. 1 and 6, the second etchant can be supplied to the glass substrate 100 having the first surface roughness 120.
第二蝕刻劑能為包括氫氟酸(HF)之混合溶液。於一實施例中，第二蝕刻劑能為氫氟酸水溶液。於另一實施例中，第二蝕刻劑能為氫氟酸、鹽酸、硝酸及水的混合溶液。此時，氫氟酸、鹽酸、硝酸及水之重量百分比能為約30～約70：約10～約20：約0.5～約5：約5～約59.5。The second etchant can be a mixed solution including hydrofluoric acid (HF). In one embodiment, the second etchant can be an aqueous solution of hydrofluoric acid. In another embodiment, the second etchant can be a mixed solution of hydrofluoric acid, hydrochloric acid, nitric acid, and water. At this point, the weight percentage of hydrofluoric acid, hydrochloric acid, nitric acid, and water can range from about 30 to about 70: from about 10 to about 20: from about 0.5 to about 5: from about 5 to about 59.5.
於一實施例中，能藉由浸泡玻璃基板100於包含第二蝕刻劑之容器內，而將第二蝕刻劑供應至玻璃基板100。於另一實施例中，能藉由噴嘴噴灑第二蝕刻劑，而將第二蝕刻劑供應至玻璃基板100。此時，玻璃基板100可垂直立起，且第二蝕刻劑能從複數個噴嘴均勻地供應至玻璃基板100。In one embodiment, the second etchant can be supplied to the glass substrate 100 by immersing the glass substrate 100 in a container containing the second etchant. In another embodiment, the second etchant can be supplied to the glass substrate 100 by spraying a second etchant through the nozzle. At this time, the glass substrate 100 can stand upright, and the second etchant can be uniformly supplied from the plurality of nozzles to the glass substrate 100.
因此，能藉由使用第二蝕刻劑蝕刻形成有第一表面粗糙結構120之玻璃基板100，而形成第二表面粗糙結構130(步驟S130)。Therefore, the second surface roughness 130 can be formed by etching the glass substrate 100 on which the first surface roughness 120 is formed by using the second etchant (step S130).
玻璃基板100之凸部與第二蝕刻劑的接觸表面面積大，而被第二蝕刻劑蝕刻得相對較多。另外，玻璃基板100之凹部與第二蝕刻劑的接觸表面面積小，而被第二蝕刻劑蝕刻得相對較少。因此，第二表面粗糙結構的粗糙度130小於第一表面粗糙結構的粗糙度120。於一實施例中，第二表面粗糙結構130之十點平均粗糙度(Rz)能為約0.6 μm至約1.3 μm。於另一實施例中，第二表面粗糙結構130之十點平均粗糙度(Rz)能為約0.8 μm至約1.2 μm。The contact surface area of the convex portion of the glass substrate 100 and the second etchant is large, and is relatively etched by the second etchant. In addition, the contact surface area of the concave portion of the glass substrate 100 and the second etchant is small, and is relatively etched by the second etchant. Therefore, the roughness 130 of the second surface roughness is less than the roughness 120 of the first surface roughness. In one embodiment, the tenth average roughness (Rz) of the second surface roughness 130 can be from about 0.6 μm to about 1.3 μm. In another embodiment, the second surface roughness 130 has a ten point average roughness (Rz) of from about 0.8 μm to about 1.2 μm.
當十點平均粗糙度(Rz)大於約1.3 μm時，玻璃基板100之反射率會降低，而使光眩不會產生。然而，玻璃基板100上之表面卻可能會霧化。當十點平均粗糙度(Rz)小於約0.6 μm時，玻璃基板100雖然會看起來很乾淨，卻可能會因過高的反射率而產生光眩。When the ten-point average roughness (Rz) is more than about 1.3 μm, the reflectance of the glass substrate 100 is lowered, and the light glare is not generated. However, the surface on the glass substrate 100 may be atomized. When the ten-point average roughness (Rz) is less than about 0.6 μm, although the glass substrate 100 may look clean, it may cause glare due to excessive reflectance.
當將形成有第二表面粗糙結構130之玻璃基板100移離第二蝕刻劑或者停止噴灑第二蝕刻劑之後，能清洗並乾燥玻璃基板100，以去除殘留的第二蝕刻劑，且此時能完成玻璃基板100之表面處理。After the glass substrate 100 having the second surface roughness 130 formed thereon is removed from the second etchant or the second etchant is stopped, the glass substrate 100 can be washed and dried to remove the residual second etchant, and at this time The surface treatment of the glass substrate 100 is completed.
關於製造防光眩玻璃之方法，第二表面粗糙結構能形成於玻璃基板100上，而能漫射或折射照射至玻璃基板100之入射光，以防止光眩產生。此外，因這種製造防光眩玻璃之方法為簡單的，而能夠降低表面處理之成本。Regarding the method of manufacturing the anti-glare glass, the second surface roughness structure can be formed on the glass substrate 100, and can diffuse or refract incident light irradiated to the glass substrate 100 to prevent generation of light glare. Further, since the method of manufacturing the anti-glare glass is simple, the cost of the surface treatment can be reduced.
第7圖繪示用於說明本發明另一實施例之製造防光眩玻璃之方法之流程圖，以及第8及9圖繪示用以說明第7圖中之製造防光眩玻璃之方法之剖視圖。7 is a flow chart for explaining a method for manufacturing an anti-glare glass according to another embodiment of the present invention, and FIGS. 8 and 9 are diagrams for explaining a method for manufacturing an anti-glare glass according to FIG. 7. Cutaway view.
請參照第7及8圖，於玻璃基板200之表面上能執行噴蝕處理(blasting process)。於一實施例中，能使用細珠(bead)執行噴蝕處理。於另一實施例中，能使用砂粒(sand)執行噴蝕處理。Referring to Figures 7 and 8, a blasting process can be performed on the surface of the glass substrate 200. In one embodiment, the etching process can be performed using beads. In another embodiment, the erosion process can be performed using sand.
因此，能於玻璃基板200之表面上形成第一表面粗糙結構210(步驟S210)。Therefore, the first surface roughness structure 210 can be formed on the surface of the glass substrate 200 (step S210).
第一表面粗糙結構210能具有約1.2 μm至約1.7 μm之十點平均粗糙度(Rz)。十點平均粗糙度(Rz)意指沿著輪廓的評估長度的五個最高峰之平均高度及五個最低凹處之平均高度之間的差異。當十點平均粗糙度(Rz)小於約1.2 μm或大於約1.7 μm時，即使後續對玻璃基板200進行蝕刻處理，可能也難以於玻璃基板200上形成所想要的粗糙結構。The first surface roughness 210 can have a ten point average roughness (Rz) of from about 1.2 μm to about 1.7 μm. The ten point average roughness (Rz) means the difference between the average height of the five highest peaks along the estimated length of the profile and the average height of the five lowest recesses. When the ten-point average roughness (Rz) is less than about 1.2 μm or more than about 1.7 μm, even if the glass substrate 200 is subsequently subjected to an etching treatment, it may be difficult to form a desired roughness on the glass substrate 200.
第一表面粗糙結構210能根據細珠或砂粒之粒子尺寸而有所不同。因此，能藉由調整噴蝕處理中細珠或砂粒之粒子尺寸，而控制第一表面粗糙結構210的粗糙度。於一實施例中，當細珠或砂粒之粒子尺寸為小時，玻璃基板200之第一表面粗糙結構210的粗糙度能變低。相反地，當細珠或砂粒之粒子尺寸為大時，玻璃基板200之第一表面粗糙結構210的粗糙度能變高。The first surface roughness 210 can vary depending on the particle size of the beads or sand. Therefore, the roughness of the first surface roughness 210 can be controlled by adjusting the particle size of the fine beads or sand particles in the etching process. In one embodiment, when the particle size of the fine beads or sand particles is small, the roughness of the first surface roughness 210 of the glass substrate 200 can be lowered. Conversely, when the particle size of the fine beads or the sand particles is large, the roughness of the first surface roughness 210 of the glass substrate 200 can be increased.
藉由噴蝕處理，能於玻璃基板200之表面上形成複數個微玻璃及微裂縫。A plurality of microglasses and microcracks can be formed on the surface of the glass substrate 200 by the etching treatment.
請參照第7及9圖，蝕刻劑能供應至具有第一表面粗糙結構210之玻璃基板200。Referring to FIGS. 7 and 9, an etchant can be supplied to the glass substrate 200 having the first surface roughness 210.
蝕刻劑能為包括氫氟酸(HF)之混合溶液。於一實施例中，蝕刻劑能為氫氟酸水溶液。於另一實施例中，蝕刻劑能為氫氟酸、硝酸及水的混合溶液。此時，氫氟酸、硝酸及水之重量百分比能為約5～約10：約10～約30：約60～約85。於另一實施例中，蝕刻劑能為氫氟酸、鹽酸、硝酸及水的混合溶液。此情況下，氫氟酸、鹽酸、硝酸及水之重量百分比能為約30～約70：約10～約20：約0.5～約5：約5～約59.5。The etchant can be a mixed solution including hydrofluoric acid (HF). In one embodiment, the etchant can be an aqueous solution of hydrofluoric acid. In another embodiment, the etchant can be a mixed solution of hydrofluoric acid, nitric acid, and water. At this point, the weight percentage of hydrofluoric acid, nitric acid, and water can range from about 5 to about 10: from about 10 to about 30: from about 60 to about 85. In another embodiment, the etchant can be a mixed solution of hydrofluoric acid, hydrochloric acid, nitric acid, and water. In this case, the weight percentage of hydrofluoric acid, hydrochloric acid, nitric acid and water can range from about 30 to about 70: from about 10 to about 20: from about 0.5 to about 5: from about 5 to about 59.5.
於一實施例中，能藉由浸泡玻璃基板200於包含蝕刻劑之容器內，而將蝕刻劑供應至玻璃基板200。當蝕刻劑為氫氟酸、硝酸及水之混合溶液時，能浸泡玻璃基板200於蝕刻劑之內持續約10分鐘至約300分鐘的時間。於另一實施例中，能藉由噴嘴噴灑蝕刻劑，而將蝕刻劑供應至玻璃基板200。於此，玻璃基板200可垂直立起，且蝕刻劑能從複數個噴嘴均勻地供應至玻璃基板200。In one embodiment, the etchant can be supplied to the glass substrate 200 by immersing the glass substrate 200 in a container containing an etchant. When the etchant is a mixed solution of hydrofluoric acid, nitric acid and water, the glass substrate 200 can be immersed in the etchant for a period of time of from about 10 minutes to about 300 minutes. In another embodiment, the etchant can be supplied to the glass substrate 200 by spraying the etchant through the nozzle. Here, the glass substrate 200 can stand upright and the etchant can be uniformly supplied from the plurality of nozzles to the glass substrate 200.
能藉由蝕刻劑蝕刻玻璃基板200。浸泡於蝕刻劑之內之玻璃基板200能均勻地與蝕刻劑接觸，而能均勻地蝕刻玻璃基板200。於一實施例中，玻璃基板200之表面上之微玻璃能藉由蝕刻劑蝕刻而去除。進一步言之，蝕刻劑之氟(F)能經由微裂縫滲透而蝕刻玻璃基板200之表面。The glass substrate 200 can be etched by an etchant. The glass substrate 200 immersed in the etchant can be uniformly contacted with the etchant, and the glass substrate 200 can be uniformly etched. In one embodiment, the microglass on the surface of the glass substrate 200 can be removed by etching with an etchant. Further, the fluorine (F) of the etchant can etch the surface of the glass substrate 200 via microcrack penetration.
因此，能藉由蝕刻玻璃基板200形成第二表面粗糙結構220(步驟S220)。Therefore, the second surface roughness 220 can be formed by etching the glass substrate 200 (step S220).
十點平均粗糙度(Rz)為沿著輪廓的評估長度的五個最高峰之平均高度及五個最低凹處之平均高度之間的差異。玻璃基板200上之十點平均粗糙度(Rz)能為約0.6 μm至約1.3 μm，較佳為約0.8 μm至約1.2 μm。The ten point average roughness (Rz) is the difference between the average height of the five highest peaks along the estimated length of the profile and the average height of the five lowest recesses. The ten point average roughness (Rz) energy on the glass substrate 200 can be from about 0.6 μm to about 1.3 μm, preferably from about 0.8 μm to about 1.2 μm.
當十點平均粗糙度(Rz)大於約1.3 μm時，玻璃基板200之反射率會降低，而使光眩不會產生。然而，玻璃基板200之表面卻可能會霧化。當十點平均粗糙度(Rz)小於約0.6 μm時，玻璃基板200雖然會看起來很乾淨，卻可能會因過高的反射率而產生光眩。When the ten point average roughness (Rz) is more than about 1.3 μm, the reflectance of the glass substrate 200 is lowered, and the light glare is not generated. However, the surface of the glass substrate 200 may be atomized. When the ten-point average roughness (Rz) is less than about 0.6 μm, although the glass substrate 200 may look clean, it may cause glare due to excessive reflectance.
當將形成有第二表面粗糙結構220之玻璃基板200移離蝕刻劑或者停止噴灑蝕刻劑之後，能清洗並乾燥玻璃基板200，以去除殘留的蝕刻劑，且此時能完成玻璃基板200之表面處理。After the glass substrate 200 having the second surface roughness 220 formed thereon is removed from the etchant or the etchant is stopped, the glass substrate 200 can be washed and dried to remove residual etchant, and the surface of the glass substrate 200 can be completed at this time. deal with.
關於製造防光眩玻璃之方法，第二表面粗糙結構220能形成於玻璃基板200上，而能漫射或折射照射至玻璃基板200之入射光，以防止光眩產生。此外，因這種製造防光眩玻璃之方法為簡單的，而能夠降低玻璃基板200之表面處理成本。Regarding the method of manufacturing the light-proof glare glass, the second surface rough structure 220 can be formed on the glass substrate 200 to diffuse or refract incident light that is incident on the glass substrate 200 to prevent light glare from occurring. Further, since the method of manufacturing the light-proof glare glass is simple, the surface treatment cost of the glass substrate 200 can be reduced.
根據本發明上述之實施例，能藉由分離經過熱噴塗層處理而形成之陶瓷塗佈層，而於玻璃基板之表面上形成第一表面粗糙結構，而且能藉由蝕刻具有第一表面粗糙結構之玻璃基板而形成具有第二表面粗糙結構之玻璃基板。因此，能防止玻璃基板之光眩。According to the above embodiment of the present invention, the first surface roughness structure can be formed on the surface of the glass substrate by separating the ceramic coating layer formed by the thermal spray coating treatment, and the first surface roughness can be formed by etching. The glass substrate forms a glass substrate having a second surface roughness. Therefore, the glare of the glass substrate can be prevented.
此外，能藉由調整熱噴塗層處理中之陶瓷粉末之尺寸，而輕易控制玻璃基板上之第一表面粗糙結構的粗糙度及第二表面粗糙結構的粗糙度。Further, the roughness of the first surface roughness structure and the roughness of the second surface roughness structure on the glass substrate can be easily controlled by adjusting the size of the ceramic powder in the thermal spray coating treatment.
因這種製造防光眩玻璃之方法為簡單的，而能夠降低玻璃基板之表面處理成本。Since the method of manufacturing the antiglare glass is simple, the surface treatment cost of the glass substrate can be reduced.
上述內容係用以說明實施例，而並非被解釋成對其之限制。雖然已描述一些實施例，但是熟習此項技藝者將輕易地明白到，在實質上不悖離本發明之新穎教示及優點的情況下，仍可能對實施例做出各種變更。因此，此些所有的變更為有意被涵蓋於申請專利範圍中所定義的本發明之範疇內。於申請專利範圍中，手段加功能性用語，為有意囊括說明於此如執行所述功能之構造，以及不僅囊括構造上的均等物，還囊括均等的構造。因此，應理解到上述內容係用以說明各種實施例，而並非被解釋成受限於所揭露之特定實施例，且對於所揭露之實施例所做之變更以及其他實施例而言，係有意被涵蓋於後附申請專利範圍之範疇之內。The above is used to illustrate the embodiments and is not to be construed as limiting. Although a few embodiments have been described, it will be apparent to those skilled in the art that various modifications may be made to the embodiments without departing from the spirit and scope of the invention. Accordingly, all such changes are intended to be included within the scope of the invention as defined in the scope of the claims. In the context of the patent application, the means and functional terms are intended to encompass the construction in which the function is performed, and not only the structural equivalents, but also the equal construction. Therefore, the present invention is to be understood as being limited to the particular embodiments of the disclosed embodiments, and It is covered by the scope of the attached patent application.
10．．．電漿槍10. . . Plasma gun
11．．．氣體入口11. . . Gas inlet
12．．．陰極12. . . cathode
13．．．冷卻通道13. . . Cooling channel
14．．．陽極14. . . anode
15．．．外圍件15. . . Peripheral parts
16．．．支撐件16. . . supporting item
17．．．粉末入口17. . . Powder inlet
18．．．電漿火花18. . . Plasma spark
20．．．第一蝕刻劑20. . . First etchant
30．．．容器30. . . container
40．．．噴嘴40. . . nozzle
100、200．．．玻璃基板100, 200. . . glass substrate
110．．．陶瓷塗佈層110. . . Ceramic coating layer
120、210．．．第一表面粗糙結構120, 210. . . First surface roughness
130、220．．．第二表面粗糙結構130, 220. . . Second surface roughness
S110、S120、S130、S210、S220．．．流程步驟S110, S120, S130, S210, S220. . . Process step
第1圖繪示用以說明本發明之一實施例之製造防光眩玻璃之方法之流程圖。FIG. 1 is a flow chart showing a method for manufacturing an anti-glare glass according to an embodiment of the present invention.
第2至6圖繪示用以說明第1圖中之製造防光眩玻璃之方法之剖視圖。2 to 6 are cross-sectional views for explaining the method of manufacturing the antiglare glass in Fig. 1.
第7圖繪示用以說明本發明另一實施例之製造防光眩玻璃之方法之流程圖。FIG. 7 is a flow chart showing a method for manufacturing an anti-glare glass according to another embodiment of the present invention.
第8及9圖繪示用以說明第7圖中之製造防光眩玻璃之方法之剖視圖。8 and 9 are cross-sectional views for explaining the method of manufacturing the antiglare glass in Fig. 7.
S110、S120、S130．．．流程步驟S110, S120, S130. . . Process step
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|---|---|---|---|
| TW99141117A TWI401223B (en) | 2009-11-30 | 2010-11-26 | Method of manufacturing an anti-glare glass |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR101408663B1 (en) |
| TW (1) | TWI401223B (en) |
| WO (1) | WO2011065796A2 (en) |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US5196088A (en) * | 1988-08-05 | 1993-03-23 | Tru Vue, Inc. | Process and apparatus for producing non-glare glass by etching |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4306877B2 (en) * | 1999-05-31 | 2009-08-05 | 日本板硝子株式会社 | Manufacturing method of glass plate having irregularities on surface |
| JP4217097B2 (en) * | 2003-04-03 | 2009-01-28 | ダイセル化学工業株式会社 | Anti-glare film |
| KR100708690B1 (en) * | 2005-06-09 | 2007-04-17 | 삼성에스디아이 주식회사 | Film filter and plasma display apparatus including the same |
| KR100717803B1 (en) * | 2006-02-16 | 2007-05-11 | 삼성에스디아이 주식회사 | Plasma display panel |
| KR100854486B1 (en) | 2007-04-05 | 2008-08-26 | 한국기계연구원 | Manufacturing method for super water-repellent surface |
| JP5150312B2 (en) | 2008-03-10 | 2013-02-20 | ペンタックスリコーイメージング株式会社 | Method for forming fine uneven structure, and substrate having fine uneven structure |
| JP2009237135A (en) | 2008-03-26 | 2009-10-15 | Hoya Corp | Method of forming concave/convex structure and substrate with concave/convex structure |
-
2009
- 2009-11-30 KR KR1020090116761A patent/KR101408663B1/en active IP Right Grant
-
2010
- 2010-11-26 TW TW99141117A patent/TWI401223B/en not_active IP Right Cessation
- 2010-11-30 WO PCT/KR2010/008505 patent/WO2011065796A2/en active Application Filing
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5196088A (en) * | 1988-08-05 | 1993-03-23 | Tru Vue, Inc. | Process and apparatus for producing non-glare glass by etching |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201127766A (en) | 2011-08-16 |
| KR20110060233A (en) | 2011-06-08 |
| WO2011065796A3 (en) | 2011-10-20 |
| WO2011065796A2 (en) | 2011-06-03 |
| KR101408663B1 (en) | 2014-06-18 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |