TWI390662B - Substrate transfer device, substrate processing apparatus and substrate transfer method - Google Patents
Substrate transfer device, substrate processing apparatus and substrate transfer method Download PDFInfo
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- TWI390662B TWI390662B TW096133134A TW96133134A TWI390662B TW I390662 B TWI390662 B TW I390662B TW 096133134 A TW096133134 A TW 096133134A TW 96133134 A TW96133134 A TW 96133134A TW I390662 B TWI390662 B TW I390662B
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- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
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- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
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- H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
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- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
- H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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Description
本發明係有關於一種基材轉運裝置,一基材處理設備及一基材轉運方法。The present invention relates to a substrate transfer device, a substrate processing device, and a substrate transfer method.
透過半導體積體電路製程,一積體電路藉由重復地執行各種處理,譬如形成薄膜,蝕刻及熱熱處理,而被形成在一處理目標基材譬如像是一半導體晶圓(在下文中被簡稱為一”晶圓”)上。此外,已經接受各種處理的該晶圓可進一步接受一特定的後製處理。此後製處理例如可以是晶圓清洗處理(如,用來去除掉沉殿在該晶圓上的物質的處理)或透過測量來局定處理結果之處理(如,薄膜厚度測量處理或微粒測量處理)。Through the semiconductor integrated circuit process, an integrated circuit is formed on a processing target substrate such as a semiconductor wafer by repeatedly performing various processes such as forming a film, etching, and heat treatment (hereinafter referred to as a semiconductor wafer for short). A "wafer"). In addition, the wafer that has undergone various processes can be further subjected to a specific post-processing. The subsequent processing may be, for example, a wafer cleaning process (for example, a process for removing a substance deposited on the wafer) or a process of determining a processing result by measurement (eg, film thickness measurement processing or particle measurement processing). ).
上文所描述的晶圓處理可在一基材處理設備中執行,該基材處理設備包括一處理室,特定種類的處理,譬如像是電漿處理及測量處理,可在該處理室內執行。該基材處理設備可包括一帶有一轉送臂之轉送機器人,其藉由轉動及前/後移動來攜載基材進入該處理室內。該晶圓通常從該轉送臂被轉送至安裝在該處理室內的一桌台上。The wafer processing described above can be performed in a substrate processing apparatus that includes a processing chamber in which a particular type of processing, such as, for example, plasma processing and measurement processing, can be performed. The substrate processing apparatus can include a transfer robot with a transfer arm that carries the substrate into the processing chamber by rotation and front/rear movement. The wafer is typically transferred from the transfer arm to a table mounted within the processing chamber.
當如上文所述地轉送該晶圓時,有一種方法在此技藝中常被採用,有複數根穿過該桌台的支撐銷被作成可上/下移動用以將該晶圓從該送臂上接受至該等支撐銷上,然後將該晶圓放置在該桌台上(例如,參見專利參考文獻1)。在另一轉送方法中,被構成該轉送機器人的一部分的小鉗子夾除住的該晶圓被一設置在該轉送機器人與該礳台之間的轉動臂送到該桌台上(參見專利參考文獻2)。When transferring the wafer as described above, a method is commonly employed in the art, with a plurality of support pins passing through the table being moved up/down for the wafer to be lifted from the arm The support pins are received thereon and the wafer is then placed on the table (see, for example, Patent Reference 1). In another transfer method, the wafer clipped by the small pliers constituting a part of the transfer robot is sent to the table by a rotating arm disposed between the transfer robot and the stage (see Patent Reference) Literature 2).
為了要確保放在該桌台上的晶圓在一最佳的方式下被處理,該晶圓必需被精確地放置在該桌台上,不容許在水平方向上有任何位置上的誤對準。因此,在習知技藝中,如果該晶圓在水平方向上有汶對準的話,則該晶圓會被該轉送機器人從該桌台上拿走,該誤對準在該轉送臂或在該轉送機器人上被矯正,然後該晶圓再被放到該桌台上。In order to ensure that the wafer placed on the table is processed in an optimal manner, the wafer must be accurately placed on the table, and misalignment at any position in the horizontal direction is not allowed. . Therefore, in the prior art, if the wafer is aligned in the horizontal direction, the wafer is removed from the table by the transfer robot, and the misalignment is at the transfer arm or The transfer robot is corrected and the wafer is then placed on the table.
詳言之,如果已經如專利參考文獻1中所描述地藉由上/下移該等支撐銷加以轉送的該晶圓被認定為有誤對準的話,則在該桌台上的該晶圓會被該等支撐銷舉起且該轉送臂會在定位處等它並取得該晶圓。該晶圓位置接著會在被放回到該桌台上之前藉由操控該轉送臂來加以調整。In particular, if the wafer transferred by up/down the support pins as described in Patent Reference 1 is deemed to be misaligned, then the wafer on the table Will be lifted by the support pins and the transfer arm will wait for it at the location and take the wafer. The wafer position is then adjusted by manipulating the transfer arm before being placed back on the table.
如果該轉送機器人本身包括一如專利參考文獻2所描述的晶圓對準裝置的話,則該晶圓位置會在該轉送機器人的小鉗子處被矯正,然後該晶圓被該轉動臂帶回到該桌台上(見專利參考文獻2的圖2及3)。If the transfer robot itself includes a wafer alignment device as described in Patent Reference 2, the wafer position is corrected at the transfer pliers of the transfer robot, and then the wafer is brought back by the rotary arm. On the table (see Figures 2 and 3 of Patent Reference 2).
如上文所述之忙於誤對準矯正的轉送臂或轉送機器人無法實施另一操作(如,該轉送臂或轉送機器人無法從事另一晶圓的轉送作業)。這所產生的一個問題為晶圓處理的產出率會變得很差。The transfer arm or the transfer robot that is busy with the misalignment correction as described above cannot perform another operation (for example, the transfer arm or the transfer robot cannot perform the transfer operation of another wafer). One problem that arises is that the yield of wafer processing can become very poor.
此項問題在此技藝中的一個方法中被解決,其中該桌台沿著X方向及Y方向被位移用以在不牽涉到該轉送臂之下矯正該晶圓在該水平方向上的誤對準。例如,專利參考文獻3揭示一種方法,在此方法中其上放置了該晶圓的桌台被轉動且晶圓誤對準係藉由使用一CCD線性感測器來偵測該晶圓的整個外圓周邊緣,然後被偵測到的誤對準係藉由將該桌台沿著XY方向移動來加以矯正。This problem is solved in one of the techniques in which the table is displaced along the X and Y directions to correct the misalignment of the wafer in the horizontal direction without involving the transfer arm. quasi. For example, Patent Reference 3 discloses a method in which a table on which the wafer is placed is rotated and wafer misalignment is detected by using a CCD line sensor to detect the entire wafer. The outer circumferential edge, and then the detected misalignment, is corrected by moving the table in the XY direction.
此外,專利參考文獻4揭露一種方法,在該方法中當用轉動支撐件(載具臂)支撐該晶圓時,該晶圓的外緣用複數個CCD照相機來對其照相,該晶圓的位置係根據至相結果來測定且任何的晶圓誤對準係藉由將該桌台沿著X及Y方向移動來加以矯正。Further, Patent Reference 4 discloses a method in which when the wafer is supported by a rotary support (carrier arm), the outer edge of the wafer is photographed by a plurality of CCD cameras, the wafer The position is determined from the phase results and any misalignment of the wafer is corrected by moving the table in the X and Y directions.
然而,在專利參考文獻3中揭露的方法中,該晶圓必需藉由一晶圓升降件而被降低到該桌台上用以偵測晶圓誤對準且如果任何晶圓誤對準被偵測到的話,該晶圓必需被該晶圓升降件舉離該桌台且該桌台必需沿著X及Y方向被移動用以矯正該晶圓誤對準,然後該晶圓必需被再次降低到該桌台上。因為該晶圓必需被升高及降低多次,所以誤對準矯正成為一項耗時的操作,而這會造成該晶圓處理的產出率被降低。However, in the method disclosed in Patent Reference 3, the wafer must be lowered onto the table by a wafer lifter to detect wafer misalignment and if any wafer misalignment is If detected, the wafer must be lifted off the table by the wafer lifter and the table must be moved along the X and Y directions to correct the wafer misalignment, and then the wafer must be re-aligned. Lower it to the table. Since the wafer must be raised and lowered multiple times, misalignment correction becomes a time consuming operation, which causes the yield of the wafer processing to be reduced.
專利參考文獻4所揭露的技術尚有一項問題未加以解決,亦即,如果該晶圓的誤對準已達到一個CCD照相機無法偵測到晶圓的外緣的程度時,則晶圓誤對準偵測就無法實施,因此該誤對準就無法藉由沿著X及Y方向移動該桌台來加以矯正。此外,因為支撐該晶圓之該轉動支撐件(載具臂)並沒有沿著X及Y方向移動,所以沿著X及Y方向的位置矯正就無法藉由該轉動支撐件(載具臂)本身來達成。There is still another problem in the technique disclosed in Patent Reference 4, that is, if the misalignment of the wafer has reached a level where the CCD camera cannot detect the outer edge of the wafer, the wafer is misaligned. Detection cannot be performed, so the misalignment cannot be corrected by moving the table in the X and Y directions. In addition, since the rotation support member (carrier arm) supporting the wafer does not move in the X and Y directions, positional correction along the X and Y directions cannot be performed by the rotation support member (carrier arm). It is achieved by itself.
因此,該晶圓必需被該傳送機器人或該傳送臂所撿取,然後放回到該轉動支撐件(載具臂)上。因為該傳送機器人或該傳送臂在此處理期間無法涉入其它的操作(如,立一晶圓的傳送)中,所以該晶圓處理的產出率就會被降低。Therefore, the wafer must be picked up by the transfer robot or the transfer arm and then returned to the rotary support (carrier arm). Since the transfer robot or the transfer arm cannot be involved in other operations (e.g., transfer of a wafer) during this process, the yield of the wafer process is reduced.
(專利參考文獻1)日本公開專利公開第H06-097269號。(Patent Reference 1) Japanese Laid-Open Patent Publication No. H06-097269.
(專利參考文獻2)日本公開專利公開第H05-343500號。(Patent Reference 2) Japanese Laid-Open Patent Publication No. H05-343500.
(專利參考文獻3)日本公開專利公開第H08-008328號。(Patent Reference 3) Japanese Laid-Open Patent Publication No. H08-008328.
(專利參考文獻4)日本公開專利公開第2002-280287號。(Patent Reference 4) Japanese Laid-Open Patent Publication No. 2002-280287.
為了要克服以上所提之與先前技術有關的問題,本發明的一個目的為提供一種基材轉送裝置,其可藉由透過已從該傳送臂接受一基材的支撐銷沿著水平方向驅動該基材並因此在沒有動用到該傳送臂或傳送機器人之下適當地矯正任何基材誤度準來最終地改善該晶圓處理的產出率。In order to overcome the above-mentioned problems associated with the prior art, it is an object of the present invention to provide a substrate transfer apparatus that can be driven in a horizontal direction by a support pin that has received a substrate from the transfer arm. The substrate and thus the proper correction of any substrate misalignment without the use of the transfer arm or transfer robot ultimately improves the yield of the wafer process.
上述的目的在本發明的一個面向中藉由提供一基材轉送裝置來達成,該基材轉送裝置將基材轉送於載負該基材的一傳送臂與基材被放置於其上的一桌台之間,該基材轉送裝置包含複數根支撐銷其被設置在環繞著一桌台的支撐軸且彼此被間隔開來的位置上,這些支撐銷從基材的底面支撐該基材,一基座該等支撐銷係安裝在該基座上,一垂直的驅動機構用來藉由透過該基座上/下驅動該等支撐銷來升/降該基材及一水平驅動機構用來藉由透過該基座水平地驅動該等支撐銷來沿著水平方向調整該基材的位置。The above object is achieved in one aspect of the present invention by providing a substrate transfer device that transfers a substrate to a transfer arm carrying the substrate and a substrate on which the substrate is placed. Between the tables, the substrate transfer device includes a plurality of support pins disposed at positions spaced apart from each other by a support shaft surrounding a table, the support pins supporting the substrate from a bottom surface of the substrate, a support pin is mounted on the base, and a vertical drive mechanism is used to raise/lower the substrate and a horizontal drive mechanism by driving the support pins up/down through the base. The position of the substrate is adjusted in a horizontal direction by horizontally driving the support pins through the base.
依據本發明,該基材轉送裝置包含支撐銷其能夠沿著水平方向(沿著X及Y方向)移動,一已從該轉送臂被轉送至該等支撐銷上的基材可在不使用到該轉送臂之下透過支撐該基材的支撐銷被沿著水平方向驅動。因此,該基材之任何位置上的誤對準都可被適當地矯正。此外,一但該基材被轉送至該等支撐銷上,該轉送臂可立即從事另一個操作。因此,該基材處理的產出率可獲得改善。According to the present invention, the substrate transfer device includes a support pin that is movable in a horizontal direction (along the X and Y directions), and a substrate that has been transferred from the transfer arm to the support pins can be used without The support pin under the transfer arm that is supported by the substrate is driven in the horizontal direction. Therefore, misalignment at any position of the substrate can be appropriately corrected. In addition, once the substrate is transferred to the support pins, the transfer arm can immediately perform another operation. Therefore, the yield of the substrate treatment can be improved.
用來偵測被支撐於該等支撐銷上的基材的水平位置的一基材位置偵測機構最好是被設置在靠近該桌台。該基材沿著該水平方向的位置可藉由此一基材位置偵測機構加以偵測,因此在該基材被支撐於該等支撐銷上時就可作出該基材是否有被誤對準的判斷。依據本發明,是該等支撐銷,而不是該桌台,被沿著水平方向驅動,因此當基材誤對準的程度太大而無法被該基材位置偵測機構所偵測到時,該基材可在基材仍被保持在該等支撐銷上時透過該等支撐銷沿著水平方向被移位至一個該誤對準可被該基材位置偵測機構偵測到的位置。因此,即使基材被誤對準達到一很大的程度,該基材位置仍可被偵測到且該誤對準可被適當地矯正。A substrate position detecting mechanism for detecting the horizontal position of the substrate supported on the support pins is preferably disposed adjacent to the table. The position of the substrate along the horizontal direction can be detected by the substrate position detecting mechanism, so that the substrate can be mistyped when the substrate is supported on the support pins. Quasi-judgment. According to the present invention, the support pins, rather than the table, are driven in a horizontal direction, so that when the degree of misalignment of the substrate is too large to be detected by the substrate position detecting mechanism, The substrate can be displaced in the horizontal direction through the support pins while the substrate is still held on the support pins to a position where the misalignment can be detected by the substrate position detecting mechanism. Therefore, even if the substrate is misaligned to a large extent, the substrate position can be detected and the misalignment can be appropriately corrected.
應注意的是,該基材位置偵測機構應採用一結構其可偵測該基材在至少兩個點的圓周邊緣。只要該基材的圓周邊緣在至少兩個位置處可被偵測到,則一碟形基材,譬如一半導體晶圓,的中心部分即可被決定出來。It should be noted that the substrate position detecting mechanism should adopt a structure which can detect the circumferential edge of the substrate at at least two points. The central portion of a dish-shaped substrate, such as a semiconductor wafer, can be determined as long as the circumferential edge of the substrate can be detected at at least two locations.
該基材轉送裝置可進一步包含一控制單元其執行基材轉送處理用以藉由透過該垂直驅動機構升高該等支撐銷來接受被該轉送臂所輸送的基材,在該基材被支撐於該等支撐銷上時用該基材位置偵測機構偵測該基材沿著水平方向的位置,藉由透過該水平驅動機構沿著該水平方向驅動該等支撐銷來矯正基材的任何誤對準並最終藉由透過該垂直驅動機構降低該等支撐銷來將該基材放置在該桌台上。The substrate transfer device may further include a control unit that performs a substrate transfer process for receiving the substrate conveyed by the transfer arm by raising the support pins through the vertical drive mechanism, and the substrate is supported on the substrate Detecting the position of the substrate along the horizontal direction by the substrate position detecting mechanism on the support pins, and correcting the substrate by driving the support pins along the horizontal direction through the horizontal driving mechanism Misalignment and ultimately placing the substrate on the table by lowering the support pins through the vertical drive mechanism.
上述的結構讓任何的誤對準能夠在基材被支撐在該等支撐銷上時藉由偵測基材位置來加以適當地矯正。換言之,誤對準可比先前技術被更快地矯正,因為在先前技術中基材的位置必需被偵測且任何的誤對準都必需使用該轉送臂或支撐銷將該基材重新放置在該桌台上來加以適當地矯正。因此,本發明可達成在基材處理產出率上的改善。The above structure allows any misalignment to be properly corrected by detecting the position of the substrate while the substrate is supported on the support pins. In other words, misalignment can be corrected faster than in the prior art because the position of the substrate must be detected in the prior art and any misalignment must be used to reposition the substrate using the transfer arm or support pin. The table is up to be properly corrected. Therefore, the present invention can achieve an improvement in the processing yield of the substrate.
此外,在將基材從該轉送臂上取下時,可藉由將該轉送臂降低而在一升高起來的狀態下將該基材放置在該等支撐銷上。在此例子中,該基材可在該等支撐銷仍保持在該升高起來的狀態下被轉送。Further, when the substrate is removed from the transfer arm, the substrate can be placed on the support pins in a raised state by lowering the transfer arm. In this example, the substrate can be transferred while the support pins are still held in the raised state.
複數根支撐銷可被設置在該桌台的支撐軸周圍的位置處,這些位置彼此被間隔開在相關於該桌台的半徑之更往內的地方,且每一支撐銷的前端被容許能夠經由形成在該桌台上的穿孔突伸出超過該桌台的基材放置表面及收回至該基材放置表面底下。此結構可透過各個支撐銷在靠近該基材的中心的位置點支撐該基材,該基材因而可在對放置於該桌台上的基材的邊緣實施處理的時候被支撐於遠離該處理目標區的位置點處(如,處理被實施用以去除掉沉積在該基材的邊線上的物質)。A plurality of support pins may be disposed at positions around the support shaft of the table, the positions being spaced apart from each other further in relation to the radius of the table, and the front end of each support pin is allowed to The substrate placement surface beyond the table is projected through the perforations formed on the table and retracted under the substrate placement surface. The structure supports the substrate at a point close to the center of the substrate through the respective support pins, and the substrate can thus be supported away from the treatment when the edge of the substrate placed on the table is processed. The location of the target zone (eg, processing is performed to remove material deposited on the edge of the substrate).
如果該桌台能夠繞著該支撐軸自由地轉動的話,則該等支撐銷應被降低用以確保該等支撐銷的前端在該桌台被轉動時被收回到該桌台的底面之下。藉由以此方式將該等支撐銷降低,可確保該等穿孔及支撐銷不會在桌台轉動時彼此互撞。If the table is free to rotate about the support shaft, the support pins should be lowered to ensure that the front ends of the support pins are retracted below the bottom surface of the table when the table is rotated. By lowering the support pins in this manner, it is ensured that the perforations and support pins do not collide with each other when the table is rotated.
或者,在該基材轉送裝置裝的複數根支撐銷可被設置在該桌台的支撐軸周圍的位置處,這些位置彼此被間隔開在相關於該桌台的半徑之更往外的地方。此結構可在無需在該桌台上形成穿孔下讓基材被支撐在該等支撐銷上。此外,因為該等支撐銷沿著水平方向被驅動的程度並沒有受到穿孔的限制,所以基材可沿著水平方向被移位一更大的程度。亦即,該基材沿著該水平方向被移位的程度可被加大。Alternatively, a plurality of support pins mounted on the substrate transfer device may be disposed at positions around the support shaft of the table, the positions being spaced apart from one another at a more outward extent relative to the radius of the table. This structure allows the substrate to be supported on the support pins without the need to form perforations in the table. Furthermore, since the extent to which the support pins are driven in the horizontal direction is not limited by the perforations, the substrate can be displaced to a greater extent in the horizontal direction. That is, the extent to which the substrate is displaced in the horizontal direction can be increased.
以上所述的目的亦可在本發明的另一面向中藉由提供一種對被放置在一設置於一處理室內的桌台上的基材實施一特定種類的處理的基材處理設備來達成,且該基材處理設備包含一設置在靠近該桌台處的基材轉送裝置其將該基材轉送於一將該基材攜載進/出該處理室的轉送臂與該桌台之間。在此基材處理設備中的該基材轉送裝置包含複數根支撐銷其被設置在環繞著一桌台的支撐軸且彼此被間隔開來的位置上,這些支撐銷從基材的底面支撐該基材,一基座該等支撐銷係安裝在該基座上,一垂直的驅動機構用來藉由透過該基座上/下驅動該等支撐銷來升/降該基材及一水平驅動機構用來藉由透過該基座水平地驅動該等支撐銷來沿著水平方向調整該基材的位置。The above objects are also achieved in another aspect of the present invention by providing a substrate processing apparatus for performing a specific type of processing on a substrate placed on a table disposed in a processing chamber. And the substrate processing apparatus includes a substrate transfer device disposed adjacent the table for transferring the substrate between a transfer arm carrying the substrate into and out of the processing chamber and the table. The substrate transfer device in the substrate processing apparatus includes a plurality of support pins disposed at positions spaced apart from each other by a support shaft surrounding a table, the support pins supporting the bottom surface of the substrate a substrate, a support pin is mounted on the base, and a vertical drive mechanism for raising/lowering the substrate and a horizontal drive by driving the support pins up/down through the base The mechanism is adapted to adjust the position of the substrate in a horizontal direction by horizontally driving the support pins through the base.
依據上述的本發明,該基材之任何誤對準都可在不使用到該轉送臂之下透過支撐銷將該基材沿著水平方向移位來加以適當地矯正。因此,一但該基材被送至該基材轉送裝置,該轉送臂可立即從事另一個操作,而最終,該基材處理的產出率可獲得改善。此外,因為該基材沒有任何誤對準地被精確地放置在該桌台上,所以該特定種類的處理可以一穩定的方式被實施於該基材上。According to the invention as described above, any misalignment of the substrate can be suitably corrected by displacing the substrate in the horizontal direction through the support pins without using the transfer arm. Therefore, once the substrate is fed to the substrate transfer device, the transfer arm can immediately perform another operation, and finally, the yield of the substrate treatment can be improved. Moreover, because the substrate is accurately placed on the table without any misalignment, this particular type of processing can be performed on the substrate in a stable manner.
上述的目的可在本發明的另一面向中藉由提供一種包括複數個處理室的基材處理設備而被進一步達成,特定的處理在這些處理室內被實施於基材上且該基材處理設備藉由透過一轉送臂將一基材依序地轉送至各個處理室來處理該基材,其中至少一處理室被用作為一後處理室(post-processing chamber),已在另一處理室中接受處理的基材被轉送至該後處理室用以接受後處理且該後處理室配備了一基材轉送裝置其將該基材轉送於一設置在該後處理室內的桌台與該轉送臂之間。在此基材處理設備中的該基材轉送裝置包含複數根支撐銷其被設置在環繞著一桌台的支撐軸且彼此被間隔開來的位置上,這些支撐銷從基材的底面支撐該基材,一基座該等支撐銷係安裝在該基座上,一垂直的驅動機構用來藉由透過該基座上/下驅動該等支撐銷來升/降該基材及一水平驅動機構用來藉由透過該基座水平地驅動該等支撐銷來沿著水平方向調整該基材的位置。The above object can be further achieved in another aspect of the present invention by providing a substrate processing apparatus including a plurality of processing chambers in which specific processing is performed on a substrate and the substrate processing apparatus The substrate is processed by sequentially transferring a substrate through a transfer arm to each of the processing chambers, at least one of which is used as a post-processing chamber in another processing chamber The processed substrate is transferred to the aftertreatment chamber for post-treatment and the post-treatment chamber is provided with a substrate transfer device that transfers the substrate to a table disposed in the aftertreatment chamber and the transfer arm between. The substrate transfer device in the substrate processing apparatus includes a plurality of support pins disposed at positions spaced apart from each other by a support shaft surrounding a table, the support pins supporting the bottom surface of the substrate a substrate, a support pin is mounted on the base, and a vertical drive mechanism for raising/lowering the substrate and a horizontal drive by driving the support pins up/down through the base The mechanism is adapted to adjust the position of the substrate in a horizontal direction by horizontally driving the support pins through the base.
被轉送至該後處理室內的該基材在被該轉送臂重復地轉送進/出其它處理室之後會有很大的誤對準的機會是相當高的。然而,藉由依據本發明的基材轉送裝置,即使是一很大程度的基材誤對準亦可單純地藉由沿著該水平方向驅動支撐著該基材的支撐銷,而無需如先前技術般地從該處理室中取出該基材然後再將基材放回到該處理室中或將基材放回到該桌台上,即可被適當地且精確地矯正。換言之,藉由採用依據本發明的基材轉送裝置加上該後處理室可達到一重大的好處。The chance of the substrate being transferred to the post-processing chamber having a large misalignment after repeated transfer of the transfer arm into/out of the other processing chamber is quite high. However, with the substrate transfer device according to the present invention, even a large degree of substrate misalignment can be driven by simply supporting the support pins of the substrate in the horizontal direction, as before. Technically removing the substrate from the processing chamber and then placing the substrate back into the processing chamber or placing the substrate back onto the table can be properly and accurately corrected. In other words, a significant benefit can be achieved by the use of a substrate transfer device in accordance with the present invention in addition to the aftertreatment chamber.
該後處理室可以是一清潔處理室,沉積在該基材的圓周邊緣上的物質在該清潔處理室中被去除掉。在此基材轉送裝置中的該等複數根支撐銷較佳地是被設置在環繞該桌台的支撐軸周圍的位置處,這些位置彼此被間隔開在相關於該桌台的半徑之更往內的地方,且每一支撐銷的前端被容許能夠經由形成在該桌台上的穿孔突伸出超過該桌台的基材放置表面及收回至該基材放置表面底下。此結構可透過各個支撐銷在靠近該基材的中心的位置點支撐該基材。因此,沉積在該基材的圓周邊緣上的物質可在沒有被支撐銷阻擋到之下在被去除掉。The post-treatment chamber can be a cleaning chamber in which material deposited on the circumferential edge of the substrate is removed. The plurality of support pins in the substrate transfer device are preferably disposed at a position around the support shaft surrounding the table, the positions being spaced apart from one another in relation to the radius of the table The inside, and the front end of each support pin is allowed to protrude beyond the substrate placement surface of the table through the perforations formed on the table and retracted under the substrate placement surface. The structure supports the substrate at a point close to the center of the substrate through the respective support pins. Therefore, the substance deposited on the circumferential edge of the substrate can be removed without being blocked by the support pin.
上述的目的可在本發明的另一面向中藉由提供一種可被採用於基材轉送裝置中之轉送方法而被達成,該基材轉送裝置將基材轉送於載負該基材的一傳送臂與基材被放置於其上的一桌台之間,該基材轉送裝置包含複數根支撐銷其被設置在環繞著一桌台的支撐軸且彼此被間隔開來的位置上,這些支撐銷從基材的底面支撐該基材,一基座該等支撐銷係安裝在該基座上,一垂直的驅動機構用來藉由透過該基座上/下驅動該等支撐銷來升/降該基材及一水平驅動機構用來藉由透過該基座水平地驅動該等支撐銷來沿著水平方向調整該基材的位置。該轉送方法包含一承接步驟,基材在此步驟中藉由透過該垂直驅動機構升高該等支撐銷而從該轉送臂被接受過來,一偵測步驟,在此步驟中該已被接受的基材沿著該水平方向的位置在該基材仍被該等支撐銷所支撐的時候用該基材位置偵測機構來偵測,一作決定的步驟,在此步驟中根據用該基材位置偵測機構偵測到的基材位置來作出該基材是否相關於一預定的參考位置被誤對準的決定,一放置步驟,在此步驟中如果該基材已經由該作決定的步驟判定沒有被誤對準的話則藉由透過該垂直驅動機構降低該等支撐銷來將該基材放置在該桌台上及一矯正/放置步驟,在此步驟中已經由該作決定的步驟判定為被誤對準的該基材藉由透過該水平驅動機構沿著該水平方向驅動該等支撐銷而被精確的對準,然後該基材藉由透過該垂直驅動機構降低該等支撐銷而被放置在該桌台上。The above object can be attained in another aspect of the present invention by providing a transfer method that can be employed in a substrate transfer device that transfers a substrate to a transfer carrying the substrate The arm and the substrate are placed on a table thereon, the substrate transfer device comprising a plurality of support pins disposed at positions spaced around the support shaft of a table and spaced apart from each other, the supports The pin supports the substrate from the bottom surface of the substrate, a support pin is mounted on the base, and a vertical driving mechanism is used to drive the support pins by driving the base up/down. The substrate and a horizontal drive mechanism are used to adjust the position of the substrate in a horizontal direction by horizontally driving the support pins through the base. The transfer method includes a receiving step in which the substrate is received from the transfer arm by raising the support pins through the vertical drive mechanism, a detecting step, which is accepted in this step Positioning the substrate along the horizontal direction is detected by the substrate position detecting mechanism while the substrate is still supported by the support pins, a determining step in which the substrate position is used Detecting the position of the substrate detected by the detecting mechanism to determine whether the substrate is misaligned with respect to a predetermined reference position, a placing step in which the substrate is determined by the determined step If not misaligned, the substrate is placed on the table by a lowering of the support pins through the vertical drive mechanism and a correcting/placement step, in which the determined step is determined as The misaligned substrate is precisely aligned by driving the support pins in the horizontal direction through the horizontal drive mechanism, and then the substrate is lowered by lowering the support pins through the vertical drive mechanism Place in On the table.
依據上述的本發明,一但該基材從該轉送臂被轉送至該等支撐銷之後,任何的基材誤對準都可在無需使用到該轉送臂之下藉由沿著水平方向驅動支撐著該基材的該等支撐銷來加以適當地矯正。此外,一但該基材被轉送至該等支撐銷上之後,該轉送臂可立即從事另一操作。因此,該基材處理產出率可被改善。According to the invention as described above, once the substrate is transferred from the transfer arm to the support pins, any misalignment of the substrate can be driven in the horizontal direction without using the transfer arm. The support pins of the substrate are appropriately corrected. Moreover, once the substrate is transferred to the support pins, the transfer arm can immediately perform another operation. Therefore, the substrate processing yield can be improved.
再者,在該基材從該轉送臂被接受過來的該承接步驟期間,該基材可藉由降低該轉送臂而在升高的狀態下被放置在該等支撐銷上。在此例子中,該基材可在該等支撐銷仍保持在該升高的狀態下被轉送。Further, during the receiving step in which the substrate is received from the transfer arm, the substrate can be placed on the support pins in an elevated state by lowering the transfer arm. In this example, the substrate can be transferred while the support pins remain in the elevated state.
在用來偵測該基材的位置的該偵測步驟中,如果該基材無法被該基材偵測機構偵測的話則該基材可藉由將該等支撐銷沿著該水平方向移驅動而被移位,直到該基材位置偵測機構能夠偵測到該基材位置為止。在此例子中,即使是已被送至該等支撐銷上的基材被誤對準了一個大到該基材位置偵測機構都無法偵測的程度,仍被支撐在該等支撐銷上的該基材可被移位直到該基材的位置被該基材位置偵測機構偵測到為止。因此,該誤對準可在無需將該基材重新放置在該桌台上之下即可被矯正。In the detecting step for detecting the position of the substrate, if the substrate cannot be detected by the substrate detecting mechanism, the substrate can be moved in the horizontal direction by the supporting pins The drive is displaced until the substrate position detecting mechanism can detect the position of the substrate. In this example, even if the substrate that has been fed onto the support pins is misaligned to a degree that is undetectable by the substrate position detecting mechanism, it is still supported on the support pins. The substrate can be displaced until the position of the substrate is detected by the substrate position detecting mechanism. Thus, the misalignment can be corrected without having to reposition the substrate under the table.
依據本發明,該基材的任何位置上的誤對準都可在無需使用到該轉送臂之下藉由將該等支撐銷沿著該水平方向移位來加以矯正。因此,該轉送臂可以在它將該基材輸送至該基材轉送機構之後立即從事另一操作(如,另一基材的轉送)。再者,因為任何的誤對準都可在基材被放置於桌台上之前加以矯正,所以基材誤對準矯正可很快地完成。這因而可達到在基材處理產出率上的改善。In accordance with the present invention, misalignment at any location of the substrate can be corrected by displacing the support pins in the horizontal direction without the use of the transfer arm. Thus, the transfer arm can perform another operation (e.g., transfer of another substrate) immediately after it transports the substrate to the substrate transfer mechanism. Furthermore, because any misalignment can be corrected before the substrate is placed on the table, substrate misalignment correction can be done quickly. This thus achieves an improvement in the throughput of the substrate treatment.
以下為參照附圖所提出之本發明的較佳實施例的詳細說明。應被瞭解的是,在說明與圖式中相同的標號被指定給具有大致相同的功能及結構特徵之結構元件用以免除掉對這些元件的重復描述的必要。The following is a detailed description of the preferred embodiments of the invention as set forth in the drawings. It is to be understood that the same reference numerals are given to the structural elements that have substantially the same function and structural features in the description and the drawings in order to avoid the need for repeated description of these elements.
首先,在本發明的此實施例中提出的該基材轉送裝置係參照附圖來加以說明。圖1為一立體圖其顯示各種裝置是如何被安裝的及圖2顯示圖1中的裝置的側視圖。在此實施例中描述的是一用來將一基材,譬如是一半導體晶圓(下文中被簡稱為一”晶圓”)W轉送於一轉送臂(未示出)與一桌台112之間的基材轉送裝置130。First, the substrate transfer device proposed in this embodiment of the present invention will be described with reference to the drawings. 1 is a perspective view showing how various devices are mounted and FIG. 2 is a side view showing the device of FIG. 1. Described in this embodiment is a method for transferring a substrate, such as a semiconductor wafer (hereinafter simply referred to as a "wafer"), to a transfer arm (not shown) and a table 112. A substrate transfer device 130 is in between.
如圖1及2所示,此實施例的該基材轉送裝置(升降單元)130被安裝在靠近一配備有一桌台112的桌台單元110處,該晶圓W係被放置在該桌台上。此外,一用來偵測該晶圓W的位置的基材位置偵測單元150被安裝在靠近該桌台單元110處。As shown in FIGS. 1 and 2, the substrate transfer device (elevating unit) 130 of this embodiment is mounted adjacent to a table unit 110 equipped with a table 112 on which the wafer W is placed. on. Further, a substrate position detecting unit 150 for detecting the position of the wafer W is installed near the table unit 110.
該桌台112為一圓盤形狀且其半徑被設成比晶圓W的便徑小,如圖1所示。該晶圓W被放置在一放置表面上其為該桌台112的上表面。該桌台112透過一支撐軸114藉由使用緊固件,譬如像是螺釘,而被安裝到一處理室的底面上。應被瞭解的是,該桌台112可以是一轉動桌台。如果該桌台112是一轉動桌台的話,則一步進馬達可被安裝在該支撐軸114的內部用以藉由驅動該步進馬達來轉動該桌台112。此外,被放置在該桌台112的放置表面上的該晶圓W可藉由該桌台112的一真空夾頭功能而被真空固持在該放置表面上。用以此方式被很快地固持於該放置表面上的該晶圓W即使是在該晶圓W以高速轉動亦不會從該桌台112上掉落。如圖2所示,該桌台單元110被連接至一控制單元200且該桌台112的轉動係根據控制單元200所提供的控制訊號而被控制的。The table 112 has a disk shape and its radius is set to be smaller than the diameter of the wafer W, as shown in FIG. The wafer W is placed on a placement surface which is the upper surface of the table 112. The table 112 is mounted to the bottom surface of a processing chamber through a support shaft 114 by the use of fasteners, such as screws. It should be appreciated that the table 112 can be a rotating table. If the table 112 is a rotating table, a stepper motor can be mounted inside the support shaft 114 for rotating the table 112 by driving the stepper motor. Further, the wafer W placed on the placement surface of the table 112 can be vacuum-held on the placement surface by a vacuum chuck function of the table 112. The wafer W that is quickly held on the placement surface in this manner does not fall from the table 112 even when the wafer W is rotated at a high speed. As shown in FIG. 2, the table unit 110 is coupled to a control unit 200 and the rotation of the table 112 is controlled in accordance with control signals provided by the control unit 200.
現在,使用於該基材轉送裝置130內的結構將參照圖1及3加以詳細說明。圖3只提供示於圖1的所有裝置中的該基材轉送裝置的結構。應注意到的是,圖3並沒有包括該桌台112且用2點鏈線來表示該桌台112的支撐軸114,用以便於瞭解使用在該基材轉送裝置130內的結構。Now, the structure used in the substrate transfer device 130 will be described in detail with reference to Figs. Figure 3 only provides the structure of the substrate transfer device shown in all of the devices of Figure 1. It should be noted that FIG. 3 does not include the table 112 and the two-point chain line indicates the support shaft 114 of the table 112 for facilitating understanding of the structure used in the substrate transfer device 130.
如圖3所示,該基材轉送裝置130包括複數根(如,3根)支撐銷(升降銷)132A-132C,它們支撐著將被轉送於該轉送臂(未示出)與該桌台112之間的晶圓W。這些支撐銷132A-132C被設置在該桌台112的支撐軸114周圍之彼此間隔開來的位置處,如圖3所示。較佳地,支撐銷132A-132C被設置在該支撐銷114周圍的等間隔處,以一平穩的方式支撐該晶圓W。此外,雖然支撐銷的數量不侷限於3根,但較佳地至少要有3根支撐銷來確保該晶圓的平穩支撐。As shown in FIG. 3, the substrate transfer device 130 includes a plurality of (eg, three) support pins (lift pins) 132A-132C that support the transfer arm (not shown) and the table to be transferred. Wafer W between 112. These support pins 132A-132C are disposed at positions spaced apart from each other around the support shaft 114 of the table 112, as shown in FIG. Preferably, support pins 132A-132C are disposed at equal intervals around the support pins 114 to support the wafer W in a smooth manner. Further, although the number of support pins is not limited to three, it is preferable to have at least three support pins to ensure smooth support of the wafer.
支撐銷132A-132C直立地從一基座(升降基座)134突伸出,且支撐銷132A-132C可被該基座134驅動用以同時沿著垂直方向或水平方向移動。該基座134可包括一大體環狀的安裝板135及一支撐該安裝板135的支撐板136,如圖3所示。該等支撐銷132A-132C沿著該環狀的圓周以特定的間隔(如,等間隔)被設置在該安裝板135的頂面上,而支撐板136則被安裝在一構成一支撐銷驅動機構138的X方向驅動機構138X的桌台上,這將於稍後加以詳細說明。The support pins 132A-132C project straight from a base (lifting base) 134, and the support pins 132A-132C can be driven by the base 134 for simultaneous movement in a vertical or horizontal direction. The base 134 can include a generally annular mounting plate 135 and a support plate 136 that supports the mounting plate 135, as shown in FIG. The support pins 132A-132C are disposed on the top surface of the mounting plate 135 at a specific interval (e.g., at equal intervals) along the circumference of the ring, and the support plate 136 is mounted to constitute a support pin drive. The mechanism 138 is on the table of the X-direction drive mechanism 138X, which will be described in detail later.
一注意到的是,一大到足以讓該安裝板135被***穿過該支撐軸114的側表面的開口被形成在該環狀安裝板135的一部分上。因此,即使是該支撐軸114被鎖在該處理室的底面上之後,該基材轉送裝置130可被安裝用以藉由透過該開口將該安裝板135號在該支撐軸114的周圍上來將該等支撐銷132A-132C放置在該支撐軸114的周圍。It is noted that an opening large enough to allow the mounting plate 135 to be inserted through the side surface of the support shaft 114 is formed on a portion of the annular mounting plate 135. Therefore, even after the support shaft 114 is locked on the bottom surface of the processing chamber, the substrate transfer device 130 can be mounted to pass the mounting plate 135 around the support shaft 114 through the opening. The support pins 132A-132C are placed around the support shaft 114.
該基座134被安裝到該支撐銷驅動機構138上可將該等支撐銷132A-132C沿著水平方向以及沿著垂直方向移動。詳言之,該支撐銷驅動機構138可包括用來透過該基座134將該等支撐銷132A-132C沿著X方向驅動的該X方向驅動機構138X及用來將該等支撐銷沿著Y方向驅動的Y方向驅動機構138Y。該X方向驅動機構138X可包含一桌台其可沿著X方向線性驅動,而該Y方向驅動機構138Y可包含一桌台其可將該X方向驅動機構沿著與該X方向垂直的Y方向作線性地驅動。應注意到的是,該X方向驅動機構138X與該Y方向驅動機構138Y一起構成一水平方向(XY方向)驅動機構。Mounting the base 134 to the support pin drive mechanism 138 can move the support pins 132A-132C in a horizontal direction and in a vertical direction. In particular, the support pin drive mechanism 138 can include the X-direction drive mechanism 138X for driving the support pins 132A-132C in the X direction through the base 134 and for use the support pins along the Y The Y-direction drive mechanism 138Y that is driven in the direction. The X-direction driving mechanism 138X may include a table that is linearly drivable along the X direction, and the Y-direction driving mechanism 138Y may include a table that can drive the X-direction driving mechanism in a Y direction perpendicular to the X direction. Drive linearly. It should be noted that the X-direction driving mechanism 138X and the Y-direction driving mechanism 138Y constitute a horizontal direction (XY direction) driving mechanism.
此外,該支撐銷驅動機構138包括一Z方向驅動機構138Z其包含用來透過該基座134將該等支撐銷132A-132C沿著Z方向(上/下方向)驅動。該Z方向驅動機構138Z可以是一能夠將該X方向驅動機構138X及該Y方向驅動機構138Y線性地上/下驅動的桌台。In addition, the support pin drive mechanism 138 includes a Z-direction drive mechanism 138Z that is configured to drive the support pins 132A-132C in the Z direction (up/down direction) through the base 134. The Z-direction drive mechanism 138Z may be a table that can drive the X-direction drive mechanism 138X and the Y-direction drive mechanism 138Y linearly up/down.
使用線性致動器配合這些驅動機構138X,138Y及138Z是較佳的。使用線性致動器可確保數微米或更精密的重新放置精確度並可讓該桌台以高速來驅動。應注意到的是,除了線性致動器之外,每一桌台都可用一包括一滾朱螺桿與一步進馬達共同工作的機構來驅動。應注意到的是,該基材轉送裝置130如圖2所示地被連接至該控制單元200,且各別的驅動機構138X,138Y及138Z的驅動是根據控制單元200所提供的控制訊號來控制的。It is preferred to use a linear actuator to engage these drive mechanisms 138X, 138Y and 138Z. The use of linear actuators ensures re-positioning accuracy of a few microns or more and allows the table to be driven at high speeds. It should be noted that in addition to the linear actuators, each table can be driven by a mechanism that includes a rolling screw and a stepping motor. It should be noted that the substrate transfer device 130 is connected to the control unit 200 as shown in FIG. 2, and the driving of the respective drive mechanisms 138X, 138Y and 138Z is based on the control signal provided by the control unit 200. controlling.
當在此支撐銷驅動機構138中的Z方向驅動機構138Z透過該基座134將該等支撐銷132A-132C上/下驅動時,晶圓W可被朝向該轉送臂升高或被降低至該桌台112上。此外,當該X方向驅動機構138X及該Y方向驅動機構138Y透過該基座134將該等支撐銷132A-132C沿著水平方向(XY方向)時,被固持於該等支撐銷132A-132C上的該晶圓W的位置可沿著水平方向被調整。When the Z-direction driving mechanism 138Z in the support pin driving mechanism 138 drives the supporting pins 132A-132C up/down through the base 134, the wafer W can be raised toward the transfer arm or lowered to the On the table 112. In addition, when the X-direction driving mechanism 138X and the Y-direction driving mechanism 138Y pass the supporting pins 132A-132C in the horizontal direction (XY direction) through the base 134, they are held on the supporting pins 132A-132C. The position of the wafer W can be adjusted in the horizontal direction.
因此,一但晶圓W從該轉送臂被轉送至該等支撐銷132A-132C之後,任何的基材誤對準都可在無需使用到該轉送臂或轉送機器人之下藉由沿著水平方向驅動支撐著該基材的該等支撐銷132A-132C來加以適當地矯正,用以改善該基材處理產出率。Thus, once the wafer W is transferred from the transfer arm to the support pins 132A-132C, any misalignment of the substrate can be performed without the use of the transfer arm or transfer robot by horizontal direction. The support pins 132A-132C supporting the substrate are driven to be appropriately corrected to improve the substrate processing yield.
當其上放置了該晶圓的桌台112如圖1所示地具有一相對大的直徑時,該等支撐銷132A-132C應相關於該桌台112的半徑被設置在更往內的位置處。此外,該等支撐銷132A-132C應採用一種可讓它們的前端透過形成在該桌台112上的穿孔突伸出超過該桌台112的基材放置表面及收回至該基材放置表面底下的結構。例如,該等支撐銷132A-132C可分別通過的穿孔113A-113C可如圖1所示地被形成在桌台112上。When the table 112 on which the wafer is placed has a relatively large diameter as shown in FIG. 1, the support pins 132A-132C should be disposed at a more inward position with respect to the radius of the table 112. At the office. In addition, the support pins 132A-132C should have a front end that protrudes beyond the substrate placement surface of the table 112 through the perforations formed on the table 112 and retracted under the substrate placement surface. structure. For example, the perforations 113A-113C through which the support pins 132A-132C can pass, respectively, can be formed on the table 112 as shown in FIG.
此結構可在該Z方向驅動機構138Z上/下驅動該等支撐銷132A-132C時讓該等支撐銷132A-132C的前端經由穿孔113A-113C突伸出及收回。此外,當該X方向驅動機構138X與該Y方向驅動機構138Y沿著水平方向驅動該等支撐銷132A-132C(XY驅動)時,該等支撐銷132A-132C可在該等穿孔113A-113C內沿著水平方向被移位,它們的前端同時保持著分別經由穿孔113A-113C突伸出超過該桌台的放置表面。This structure allows the front ends of the support pins 132A-132C to protrude and retract through the perforations 113A-113C when the support pins 132A-132C are driven up/down in the Z-direction drive mechanism 138Z. In addition, when the X-direction driving mechanism 138X and the Y-direction driving mechanism 138Y drive the supporting pins 132A-132C (XY driving) in the horizontal direction, the supporting pins 132A-132C may be in the through holes 113A-113C. Displaced in the horizontal direction, their front ends are simultaneously held over the perforations 113A-113C, respectively, beyond the placement surface of the table.
此結構可透過該等支撐銷132A-132C在靠近晶圓的中心位置處支撐該晶圓,因此當對放置在該桌台112上的晶圓的邊緣實施處理(譬如,稍後將詳細說明的清潔處理)時,該晶圓係被支撐於遠離該處理目標區的位置處。The structure can support the wafer at a central location near the wafer through the support pins 132A-132C, thus processing the edges of the wafer placed on the table 112 (e.g., as will be described in more detail later) In the cleaning process, the wafer is supported at a position away from the processing target zone.
將該等穿孔113A-113C的開口直徑設定成與該等支撐銷132A-132C的直徑相符且達到可讓該等支撐銷132A-132C可以沿著該水平方向移動的程度(即可容許水平放置的範圍)是較佳的。例如,該等穿孔113A-113C的直徑可被設定為10-20公釐。The opening diameters of the perforations 113A-113C are set to match the diameters of the support pins 132A-132C and to such an extent that the support pins 132A-132C can be moved in the horizontal direction (ie, allow horizontal placement) Range) is preferred. For example, the diameter of the perforations 113A-113C can be set to 10-20 mm.
如果桌台112能夠自由地轉動的話,則該等支撐銷132A-132C應被降低用以確保該等支撐銷132A-132C的前端在該桌台轉動時被收回到該桌台112的底面之下。藉由將該等支撐銷132A-132C以此方式降低,可確保該等穿孔113A-113C不會在桌台轉動時與該等支撐銷132A-132C彼此碰撞。If the table 112 is free to rotate, the support pins 132A-132C should be lowered to ensure that the front ends of the support pins 132A-132C are retracted below the bottom surface of the table 112 as the table rotates. . By lowering the support pins 132A-132C in this manner, it is ensured that the perforations 113A-113C do not collide with the support pins 132A-132C when the table is rotated.
再者,此說明係以桌台上的每一穿孔有一單一的支撐銷穿過的實施例為例子來提出,但本發明並不侷限於此例子且在一基材轉送裝置具有數量更多的支撐銷的例子中每一穿孔可以有多根支撐銷穿過。Furthermore, the description is made by taking an embodiment in which each of the perforations on the table has a single support pin, but the invention is not limited to this example and has a larger number of substrate transfer devices. In the example of the support pin, each of the perforations may have a plurality of support pins therethrough.
配備有該基材位置偵測機構的該基材位置偵測單元現將參照圖1及4加以說明。圖4為一立體圖其顯示該基材位置偵測機構所採用的結構。圖4並沒有包括圖1中的安裝基座156或桌台112,以便於對此基材位置偵測機構內的結構有更清楚的瞭解。The substrate position detecting unit equipped with the substrate position detecting mechanism will now be described with reference to Figs. Figure 4 is a perspective view showing the structure employed by the substrate position detecting mechanism. Figure 4 does not include the mounting base 156 or table 112 of Figure 1 to provide a clearer understanding of the structure within the substrate position detecting mechanism.
該基材位置偵測單元150包括一基材位置偵測機構用來偵測晶圓W沿著該水平方向的位置。該基材位置偵測機構是由複數個(在此實施例中是3個)用來偵測該晶圓W的圓周邊緣的影像捕捉機構152A-152C與分別設置成與該等影像捕捉機構152A-152C相面對的照明光源154A-154C所構成,如圖4所示。The substrate position detecting unit 150 includes a substrate position detecting mechanism for detecting the position of the wafer W along the horizontal direction. The substrate position detecting mechanism is composed of a plurality of (three in this embodiment) image capturing mechanisms 152A-152C for detecting the circumferential edge of the wafer W and respectively disposed with the image capturing mechanisms 152A. The -152C faces the illumination sources 154A-154C, as shown in FIG.
該等影像捕捉機構152A-152C中的每一者都是用一配備有CCD(電荷耦合裝置)影像感測器的CCD照相機,一焦距調整鏡片及類此者來構成。該等照明光源154A-154C中的每一者都是用一LED單元來構成。應注意到的是,該等照明光源154A-154C每一者都包括一設置在其光射出平面上的漫射板用以在整個光發射平面上以均一的強度發射出光線。Each of the image capturing mechanisms 152A-152C is constructed using a CCD camera equipped with a CCD (Charge Coupled Device) image sensor, a focus adjustment lens, and the like. Each of the illumination sources 154A-154C is constructed using an LED unit. It should be noted that each of the illumination sources 154A-154C includes a diffuser plate disposed on its light exiting plane for emitting light at a uniform intensity throughout the plane of light emission.
如圖1所示地,構成該基材位置偵測機構的該等影像捕捉機構152A-152C及照明光源154A-154C都是被安裝在一直立的安裝基座156上。該安裝基座156包括一由其頂面沿著該水平方向延伸的托架157及一沿著該水向延伸於該托架157底下的托架158。該等影像捕捉機構152A-152C被安裝在該上托架157上,而該等照明光源154A-154C則被安裝在該下托架158上。該等影像捕捉機構152A-152C與該等照明光源154A-154C因而被設置在該晶圓W的上方及底下用以將晶圓W的圓周邊緣夾在它們之間。As shown in FIG. 1, the image capturing mechanisms 152A-152C and the illumination sources 154A-154C constituting the substrate position detecting mechanism are all mounted on the upright mounting base 156. The mounting base 156 includes a bracket 157 extending from the top surface thereof in the horizontal direction and a bracket 158 extending along the water direction below the bracket 157. The image capture mechanisms 152A-152C are mounted on the upper bracket 157, and the illumination sources 154A-154C are mounted on the lower bracket 158. The image capture mechanisms 152A-152C and the illumination sources 154A-154C are thus disposed above and below the wafer W for sandwiching the circumferential edge of the wafer W therebetween.
如圖4所示,該等照明光源154A-154C的光軸被調整用以分別朝向該等影像捕捉機構152A-152C的受光表面延伸。此外,因為藉由將該等支撐銷132A-132C而將該晶圓W從該轉送臂接收過來之晶圓W的高度高於被指定為接受高度之該桌台112的放置表面且該晶圓W的中心與被指定為水平參考位置Wst之桌台的中心對準(其中該晶圓W的位置在圖4中是用2點鏈線來表示),所以各個影像捕捉機構152A-152C的位置都被調整用以聚焦於在該機受高度及在該參考位置之晶圓的邊緣上。再者,該等影像捕捉機構152A-152C被調整使得在該參考位置Wst上之該晶圓可被偵測的邊緣所在的區域分別與該等影像捕捉機構152A-152C的測量場域153A-153C對準。As shown in FIG. 4, the optical axes of the illumination sources 154A-154C are adjusted to extend toward the light receiving surfaces of the image capture mechanisms 152A-152C, respectively. In addition, because the height of the wafer W received from the transfer arm by the support pins 132A-132C is higher than the placement surface of the table 112 designated as the acceptance height and the wafer The center of W is aligned with the center of the table designated as the horizontal reference position Wst (where the position of the wafer W is indicated by a 2-point chain line in Fig. 4), so the positions of the respective image capturing mechanisms 152A-152C Both are adjusted to focus on the edge of the wafer at the height of the machine and at the reference location. Moreover, the image capture mechanisms 152A-152C are adjusted such that the area of the wafer at which the wafer can be detected is at the reference position Wst and the measurement fields 153A-153C of the image capture mechanisms 152A-152C, respectively. alignment.
詳言之,該等影像捕捉機構152A-152C的測量場域153A-153C係以等間隔的方式沿著位在該參考位置Wst的晶圓的圓周邊緣被設置,如圖5A所示。例如,以從位在該參考位置Wst的晶圓的中心量起的角度來看,介於測量場域153A與153B之間的角度及介於測量場域153B與153C之間的角度都被設定為45度且介於測量場域153A與153C之間的角度被設定為90度。測量場域153A-153C所採用的角度設定並不侷限於以上所述的者且它們可藉由調整該等影像捕捉機構152A-152C的安裝位置來自由地加以改變。In particular, the measurement fields 153A-153C of the image capture mechanisms 152A-152C are disposed at equal intervals along the circumferential edge of the wafer at the reference position Wst, as shown in Figure 5A. For example, the angle between the measurement fields 153A and 153B and the angle between the measurement fields 153B and 153C are set from the perspective of the center of the wafer positioned at the reference position Wst. The angle between 45 degrees and between the measurement fields 153A and 153C is set to 90 degrees. The angular settings employed by the measurement fields 153A-153C are not limited to those described above and they can be freely changed by adjusting the mounting positions of the image capture mechanisms 152A-152C.
該等影像捕捉機構152A-152C每一者都如圖2所示地被連接至控制單元200,用以將影像捕捉機構152A-152C所捕捉到的影像資料傳送至該控制單元200。根據各影像捕捉機構152A-152C在測量場域153A-153B所捕捉到的影像的影像資料輸出,該控制單元200可偵測該晶圓W的邊緣。The image capture mechanisms 152A-152C are each coupled to the control unit 200 as shown in FIG. 2 for transmitting image data captured by the image capture mechanisms 152A-152C to the control unit 200. The control unit 200 can detect the edge of the wafer W according to the image data output of the image captured by the image capturing mechanisms 152A-152C in the measurement fields 153A-153B.
例如,當該晶圓W的邊緣移入到測量場域153A內時,該晶圓W出現在該測量場域153A內的區域會變黑因為該區域上來自該照明光源154A的光線會被遮擋,而在該測量場域內的區域的其它部分則仍保持光亮。因此,該晶圓W的邊緣在該測量場域153A內的出現會被偵測到。因此,此狀態被稱為一邊緣出現狀態(灰色狀態),其與整個測量場域是亮的白色狀態及整個測量場域是暗的灰色狀態是不同的。For example, when the edge of the wafer W is moved into the measurement field 153A, the area of the wafer W appearing in the measurement field 153A becomes black because the light from the illumination source 154A is blocked on the area. The rest of the area within the measurement field remains bright. Therefore, the appearance of the edge of the wafer W within the measurement field 153A is detected. Therefore, this state is referred to as an edge appearance state (gray state) which is different from a white state in which the entire measurement field is bright and a gray state in which the entire measurement field is dark.
此外,因為在該測量場域153A內的亮區域與暗區域的邊界顯示出該晶圓W的輪廓(例如,一圓弧輪廓,如果該晶圓如此實施例的例子是圓盤形的話),該晶圓W的輪廓可從來自該測量場域153A的影像輸出被偵測到。In addition, since the boundary of the bright area and the dark area in the measurement field 153A shows the outline of the wafer W (for example, a circular arc profile, if the example of the wafer is disc-shaped in this example), The profile of the wafer W can be detected from the image output from the measurement field 153A.
根據如此偵測到之晶圓W的邊緣輪廓,該控制單元200經由計算來判斷該晶圓W的中心的位置。然後,該控制單元200參考該桌台112的中心(轉動中心,如果該桌台112是一轉送桌台的話)來判斷該晶圓之水平方向誤對準的程度以及該晶圓W被誤對準的特定方向。接下來,該控制單元200依據該誤對準的程度及誤對準的方向驅動該X方向驅動機構138X與該Y方向驅動機構138Y用以藉由沿著水平方向驅動該等支撐銷132A-132C來沿著該水平方向調整該晶園的位置。Based on the edge profile of the wafer W thus detected, the control unit 200 determines the position of the center of the wafer W via calculation. Then, the control unit 200 refers to the center of the table 112 (the center of rotation, if the table 112 is a transfer table) to determine the degree of misalignment of the wafer in the horizontal direction and the wafer W is mis-aligned. Quasi specific direction. Next, the control unit 200 drives the X-direction driving mechanism 138X and the Y-direction driving mechanism 138Y according to the degree of misalignment and the misalignment direction for driving the support pins 132A-132C in the horizontal direction. To adjust the position of the crystal garden along the horizontal direction.
應注意的是,該晶圓W之水平誤對準的程度與方向可藉由比較來自該測量場域153A-153C之用於晶圓位置偵測的影像資料輸出與參考影像資料來決定,該參考影像資料是由來自測量場域153A-153C之藉由捕捉在該參考位置Wst的晶圓W的邊緣的影像的影像資料輸出所構成的且被事先儲存起來。例如,假設該晶圓W相關於該參考位置Wst被誤對準且在來自該測量場域153A的影像資料輸出中顯示出之該晶圓W的邊緣的位置被偏移,則在這些情況下之在來自該測量場域153A的影像資料輸出中的亮區域與暗區域的比例(亮/暗比例)是不同於晶圓W在該參考位置Wst時所測得之比例。因此,該目標晶圓W之任何的誤對準都可藉由比較該目標晶圓W之測得的亮/暗比例與晶圓在該參考位置Wst測得的亮/暗比例來偵測出來,且誤對準的程度與特定方向亦可根據該亮/暗比例來決定。It should be noted that the degree and direction of horizontal misalignment of the wafer W can be determined by comparing image data output and reference image data for wafer position detection from the measurement fields 153A-153C. The reference image data is composed of image data output from the measurement fields 153A-153C by capturing the image of the edge of the wafer W at the reference position Wst and stored in advance. For example, assuming that the wafer W is misaligned with respect to the reference position Wst and the position of the edge of the wafer W is shifted in the image data output from the measurement field 153A, in these cases The ratio of the bright area to the dark area (light/dark ratio) in the image data output from the measurement field 153A is different from the ratio measured when the wafer W is at the reference position Wst. Therefore, any misalignment of the target wafer W can be detected by comparing the measured light/dark ratio of the target wafer W with the light/dark ratio of the wafer measured at the reference position Wst. The degree of misalignment and the specific direction can also be determined according to the brightness/dark ratio.
然後,根據該誤對準的程度與方向來驅動該等支撐銷132A-132C用以讓在該測量場域153A中之亮/暗比例與晶圓在該參考位置Wst時的比例相一致,該晶圓W沿著水平方向的位置可被調整。Then, the support pins 132A-132C are driven according to the degree and direction of the misalignment to match the ratio of the light/dark in the measurement field 153A to the ratio of the wafer at the reference position Wst. The position of the wafer W in the horizontal direction can be adjusted.
或者,被精確地對準的晶圓W的邊緣輪廓的圖案(參考圖案)可事先被儲存在一儲存機構中,然後藉由比較被偵測到的晶圓W的邊緣的圖案與該參考圖案用以根據該晶圓W的邊緣輪廓圖案與參考圖案之間的差異經由計算來決定一特定的誤對準方向及程度並作出該目標晶圓W是否被誤對準。Alternatively, the pattern (reference pattern) of the edge contour of the precisely aligned wafer W may be previously stored in a storage mechanism, and then by comparing the pattern of the edge of the detected wafer W with the reference pattern The method is used to determine a specific misalignment direction and extent based on the difference between the edge contour pattern of the wafer W and the reference pattern and to determine whether the target wafer W is misaligned.
在一基材轉送裝置中,譬如此實施例的基材轉送裝置130其將基材W接受至尺在升高的狀態下的支撐銷上,該晶圓W誤對準的程度會大於透過一轉送件轉送之晶圓W的誤對準程度,該轉送件調整該晶圓W在一臂(譬如一轉送臂)上的位置,該轉送臂藉由從上方鉤住該晶圓W的邊緣來將該晶圓W舉起。In a substrate transfer device, the substrate transfer device 130 of the embodiment of the present invention receives the substrate W onto the support pins in the raised state, and the wafer W is misaligned to a greater extent than The degree of misalignment of the wafer W transferred by the transfer member, the transfer member adjusting the position of the wafer W on an arm (such as a transfer arm) by hooking the edge of the wafer W from above The wafer W is lifted up.
在某些情況底下,該晶圓W會被誤對準一極大的程度,即該晶圓W的圓周邊緣在來自該測量場域153A-153C的任何一者的影像資料輸出中無法被偵測到。詳言之,整個測量場域可被表現為亮區域(在此例子中該等測量場域被判定為在白色狀態(或亮狀態))或整個測量場域可被表現為暗區域(在此例子中該等測量場域被判定為在黑色狀態(或暗狀態))。在任一種例子中,該晶圓W的圓周邊緣都無法被偵測到。因為該晶圓W的位置無法被偵測到,所以誤對準的程度亦無法被確定,因此晶圓誤對準就無法被矯正。In some cases, the wafer W may be misaligned to a great extent, that is, the circumferential edge of the wafer W cannot be detected in the image data output from any of the measurement fields 153A-153C. To. In particular, the entire measurement field can be represented as a bright region (in this example the measurement fields are determined to be in a white state (or bright state)) or the entire measurement field can be represented as a dark region (here In the example, the measurement fields are determined to be in a black state (or a dark state). In either case, the circumferential edges of the wafer W cannot be detected. Since the position of the wafer W cannot be detected, the degree of misalignment cannot be determined, so wafer misalignment cannot be corrected.
關於測量場域的狀態與晶圓位置之間所作之黑/白判斷(亮/暗判斷)的關係現將加以說明。例如,當一給定的測量場域被判定為在白色狀態(整個測量場域被表現為一亮區域)時,則假設該晶圓W並沒有出現在該特定的測量場域內。如果在這些情況下該晶圓出現在該等支撐銷132A-132C上的話,則該晶圓W的中心相關於該測量場域被朝向在該參考位置Wst的晶圓的中心大幅度地誤對準的可能性就極高。在另一方面,如果一給定的測量場域被判定為在黑色狀態(整個測量場域被表現為一暗區域)的話,則在該測量場域中之該晶圓W的中心遠離在該參考位置Wst的晶圓被大幅度地朝向該特定的測量場域誤對準的可能性就極高。The relationship between the black/white judgment (light/dark judgment) made between the state of the measurement field and the wafer position will now be described. For example, when a given measurement field is determined to be in a white state (the entire measurement field is represented as a bright region), it is assumed that the wafer W does not appear in the particular measurement field. If the wafer is present on the support pins 132A-132C in these cases, the center of the wafer W is substantially misaligned with respect to the measurement field toward the center of the wafer at the reference position Wst. The possibility of quasi-permanence is extremely high. On the other hand, if a given measurement field is determined to be in a black state (the entire measurement field is represented as a dark region), then the center of the wafer W in the measurement field is far from The possibility that the wafer of reference position Wst is misaligned towards the particular measurement field is extremely high.
因此,如果一給定的測量場域被判定位是在該白色狀態的話,則該晶圓的誤對準就可藉由水平地驅動該等支撐銷132A-132C,將它們從該測量場域移動得朝向在該參考位置Wst的晶圓的中心更靠近來加以矯正。在另一方面,如果一給定的測量場域被判定位是在該白色狀態的話,則該晶圓的誤對準就可藉由水平地驅動該等支撐銷132A-132C,將它們移動得更遠離在該參考位置Wst的晶圓的中心朝向該測量場域來加以矯正。此外,如果是對複數個測量場域作白/黑判斷的話,則該誤對準的方向可根據在該等判斷結果中之所顯示出之白/黑狀態的特定組合來加以評估。因此,藉由根據顯示在該等判斷結果中之白/黑狀態的特定組合來判斷該誤對準需要被矯正的方向,該晶圓誤對準即可被調整。因此,即使是在該晶圓位置被偵測時,晶圓位置亦可沿著該誤對準可被粗略地矯正的方向被加以調整。Therefore, if a given measurement field is determined to be in the white state, misalignment of the wafer can be performed by horizontally driving the support pins 132A-132C from the measurement field. The movement is corrected toward the center of the wafer at the reference position Wst. On the other hand, if a given measurement field is determined to be in the white state, the misalignment of the wafer can be moved by horizontally driving the support pins 132A-132C. The center of the wafer at the reference position Wst is further corrected toward the measurement field. Furthermore, if a white/black determination is made for a plurality of measurement fields, the direction of the misalignment can be evaluated based on a particular combination of white/black states displayed in the determinations. Therefore, the wafer misalignment can be adjusted by judging the direction in which the misalignment needs to be corrected based on a specific combination of the white/black states displayed in the determination results. Therefore, even when the wafer position is detected, the wafer position can be adjusted along the direction in which the misalignment can be roughly corrected.
例如,如果該測量場域153A-153C都被判定是在白色狀態,如圖5A所示,的話,則該晶圓W的中心是在遠離所有的測量場域153A-153C的方向上被大幅度地誤對準(在此例子中為+Y方向上)。在這情況下,晶圓W的誤對準可如圖5B所示地藉由沿著該晶圓W的中心移動靠近所有的測量場域153A-153C的方向水平地驅動支撐銷132A-132C來矯正,其中該方向為藉由將從位在該參考位置Wst的晶圓的中心延伸朝向各測量場域153A-153C的方向(方向向量)整合所決定的方向(在此例子中為-Y方向)。應注意的是,雖然沒有示出,但如果測量場域153A-153C都被判定是在黑色狀態的話,則晶圓誤對準可藉由沿著該晶圓W的中心移動遠離從所有的測量場域153A-153C的方向,即整合所有從各個測量場域153A-153C朝向位在該參考位置Wst的晶圓的中心延伸的方向所決定的方向(在此例子中為+Y方向),水平地驅動該等支撐銷132A-132C來矯正。For example, if the measurement fields 153A-153C are all determined to be in a white state, as shown in FIG. 5A, the center of the wafer W is substantially large in the direction away from all of the measurement fields 153A-153C. Ground misalignment (in the +Y direction in this example). In this case, the misalignment of the wafer W can be horizontally driven by the support pins 132A-132C in the direction of moving all the measurement fields 153A-153C along the center of the wafer W as shown in FIG. 5B. Correction, wherein the direction is a direction determined by integrating a direction (direction vector) extending from a center of the wafer at the reference position Wst toward each of the measurement fields 153A-153C (in this example, the -Y direction) ). It should be noted that although not shown, if the measurement fields 153A-153C are all determined to be in a black state, the wafer misalignment can be moved away from all the measurement fields by moving along the center of the wafer W. The direction of the domains 153A-153C, i.e., the direction in which all of the measurement fields 153A-153C are oriented toward the center of the wafer at the reference position Wst (in this example, the +Y direction), is horizontally driven. The support pins 132A-132C are corrected.
例如,如果該晶圓W的圓周邊緣無法在測量場域153B及153C中被偵測到且測量場域153B及153C都被判定是在白色狀態,同時該晶圓W的圓周邊緣在該測量場域153A被偵測到的話,如圖6A所示,則晶圓W的中心被嚴重地誤對準於遠離該測量場域153B及153C的方向上。在此例子中,晶圓W的誤對準可藉由將該等支撐銷132A-132C沿著該晶圓W的中心遠離測量場域153B及153C的方向(即,沿著藉由整合從位在該參考位置Wst的晶圓的中心朝向測量場域153B及153C延伸的所決定的方向)水平地驅動來矯正,如圖6B所示。For example, if the circumferential edge of the wafer W cannot be detected in the measurement fields 153B and 153C and the measurement fields 153B and 153C are both determined to be in a white state, and the circumferential edge of the wafer W is at the measurement field If field 153A is detected, as shown in FIG. 6A, the center of wafer W is heavily misaligned in a direction away from the measurement fields 153B and 153C. In this example, misalignment of the wafer W can be achieved by integrating the support pins 132A-132C away from the measurement fields 153B and 153C along the center of the wafer W (ie, by integrating the slaves The center of the wafer at the reference position Wst is driven horizontally toward the determined direction in which the measurement fields 153B and 153C extend, as shown in FIG. 6B.
如果該晶圓W的圓周邊緣無法在測量場域153A及153C中被偵測到,測量場域153A被判定為在黑色狀態且測量場域153C被判定是在白色狀態,同時該晶圓W的圓周邊緣在該測量場域153B被偵測到的話,如圖7A所示,則晶圓W的中心被嚴重地誤對準於朝向該測量場域153A但更遠離測量場域153C的方向上(在此例子中為-X方向)。在這些情況下,晶圓W的誤對準可藉由沿著該晶圓的中心移動遠離該測量場域153A但靠近測量場域153C的方向(即,沿著藉由整合從該測量場域153A朝向位在該參考位置Wst的晶圓的中心延伸的方向及從該測量場域153A朝向位在該參考位置Wst的晶圓的中心延伸的方向所決定之方向(在此例子中為+X方向))水平地驅動該等支撐銷132A-132C來加以矯正。If the circumferential edge of the wafer W cannot be detected in the measurement fields 153A and 153C, the measurement field 153A is determined to be in a black state and the measurement field 153C is determined to be in a white state while the wafer W is If the circumferential edge is detected in the measurement field 153B, as shown in FIG. 7A, the center of the wafer W is heavily misaligned toward the measurement field 153A but further away from the measurement field 153C (in In this example, the -X direction). In these cases, the misalignment of the wafer W can be moved away from the measurement field 153A but close to the measurement field 153C along the center of the wafer (ie, along by the integration from the measurement field) 153A is oriented in a direction in which the center of the wafer of the reference position Wst extends and a direction determined from a direction in which the measurement field 153A extends toward the center of the wafer at the reference position Wst (in this example, the +X direction) )) The support pins 132A-132C are driven horizontally for correction.
藉由判斷各個測量場域的白/黑狀態,該晶圓的誤對準可如上所述地根據所判定的白/黑狀態來偵測晶圓誤對準然後相應地矯正晶圓誤對準來加以矯正,即使是該晶圓W被誤對準達到讓該晶圓的邊緣無法被偵測到的極大程度下亦可被矯正。應注意的是,晶圓W可以預定的增量沿著白/黑判斷所決定出來的誤對準矯正方向被移位,直到該晶圓W的邊緣出現在所有測量場域153A-153C中為止,然後該晶圓W的邊緣可被偵測用以藉由決定該晶圓W中心的位置來最終地偵測出該晶圓位置。在此例子中,即使是該晶圓W被誤對準達到一極大的程度,該晶圓W的位置仍可以一更高等級的精確度來偵測。By judging the white/black state of each measurement field, the misalignment of the wafer can detect wafer misalignment according to the determined white/black state as described above and then correct wafer misalignment accordingly. To correct it, even if the wafer W is misaligned to such an extent that the edge of the wafer cannot be detected, it can be corrected. It should be noted that the wafer W can be shifted in a predetermined increment along the misalignment correction direction determined by the white/black determination until the edge of the wafer W appears in all measurement fields 153A-153C. The edge of the wafer W can then be detected to ultimately detect the wafer location by determining the location of the wafer W center. In this example, even if the wafer W is misaligned to a very large extent, the position of the wafer W can be detected with a higher level of accuracy.
以上所述之該桌台單元110,該基材轉運裝置130及該基材位置偵測單元150的各式構件都是由控制單元200來控制。該控制單元200包含一構成該控制單元主體的CPU(中央處理單元),一ROM(唯讀記憶體)CPU執行處理所需之資料係儲存於此,一RAM(隨機存取記憶體)其包括該CPU在執行各種資料處理時所使用的一記憶體區,一儲存機構,譬如像是一硬碟機(HDD)或一記憶體,該CPU控制各式構件時所用到的程式與各式資料都被儲存於此。The table unit 110, the substrate transfer device 130 and the various components of the substrate position detecting unit 150 are controlled by the control unit 200. The control unit 200 includes a CPU (Central Processing Unit) constituting the main body of the control unit, and a ROM (Read Only Memory) CPU performs processing for storing data, and a RAM (Random Access Memory) includes A memory area used by the CPU for performing various data processing, such as a hard disk drive (HDD) or a memory, and a program and various types of data used by the CPU to control various components. Both are stored here.
接下來,使用上述的基材轉送裝置實施的晶圓轉送或處理的一特定例子將參照圖式加以說明。控制單元200藉由根據一從該儲存機構中讀取之特定的程式來控制該基材轉送裝置130與該基材位置偵測單元150的各式構件。圖8為當已被送至該轉送臂上的晶圓被放在該桌台上時所執行的轉送處理的一特定的例子的流程圖。圖9A-9E提供在晶圓處理期間於該基材轉送裝置130中實施的操作的例子的圖示。一注意的是,在圖9A-9E中的Cw及Ct跟別表示晶圓W的中心與位在該參考位置Wst的晶圓的中心。Next, a specific example of wafer transfer or processing performed using the substrate transfer device described above will be described with reference to the drawings. The control unit 200 controls the various components of the substrate transfer device 130 and the substrate position detecting unit 150 according to a specific program read from the storage mechanism. Figure 8 is a flow diagram of a particular example of a transfer process performed when a wafer that has been fed to the transfer arm is placed on the table. 9A-9E provide illustrations of examples of operations performed in the substrate transfer device 130 during wafer processing. It is noted that Cw and Ct in Figures 9A-9E indicate the center of the wafer W and the center of the wafer at the reference position Wst.
為了要將晶圓從轉送臂TA轉送至桌台112上,該等支撐銷132A-132C首先於步驟S110中被升高用以將轉送臂TA上的晶圓W放到該等支撐銷上,如圖8所示。詳言之,當載負該晶圓W的轉送臂TA被放在該桌台112上方時,該Z方向驅動機構138Z被驅動用以將該等支撐銷132A-132C沿著Z(垂直)方向升起到達一特定的晶圓接受高度,如圖9A所示。當該等支撐銷132A-132C被升起時,它們的前端穿過各個穿孔113A-113C用以突伸出超過該桌台112的放置表面且該等前端持續向上移動直到在該轉送臂TA上的晶圓W被抬起為止,如圖9B所示。一單該晶圓W被放在該等支撐銷132A-132C的前端上之後,該轉送臂TA即從桌台112上位的位置處被移走,如圖9B所示,因此達到如圖9C所示的狀態。In order to transfer the wafer from the transfer arm TA to the table 112, the support pins 132A-132C are first raised in step S110 for placing the wafer W on the transfer arm TA onto the support pins, As shown in Figure 8. In detail, when the transfer arm TA carrying the wafer W is placed above the table 112, the Z-direction drive mechanism 138Z is driven to follow the support pins 132A-132C in the Z (vertical) direction. The rise reaches a specific wafer acceptance height as shown in Figure 9A. When the support pins 132A-132C are raised, their front ends pass through the respective perforations 113A-113C for projecting beyond the placement surface of the table 112 and the front ends continue to move upward until on the transfer arm TA The wafer W is lifted up as shown in FIG. 9B. After the wafer W is placed on the front ends of the support pins 132A-132C, the transfer arm TA is removed from the upper position of the table 112, as shown in FIG. 9B, thus reaching as shown in FIG. 9C. State of the show.
雖然該等支撐銷132A-132C可如上文所述的此實施例般地被升起用以從該轉送臂TA處取得該晶圓W放在該等支撐銷132A-132C,但本發明並不侷限於此例子。例如,如果該轉送臂TA採用一種可上/下移動的結構的話,則該轉送臂TA可被降低用以將該晶圓W轉送至該等支撐銷132A-132C的前端上。在此例子中,該Z方向驅動機構138Z首先被驅動用以將該等支撐銷132A-132C沿著Z軸升起,然後載有該晶圓W的轉送臂TA被放置在該桌台112的上方。然後,該轉送臂TA被降低用以將晶圓W放到該等支撐銷132A-132C上。因此,該晶圓W可在該等支撐銷132A-132C仍處在被升高的狀態下被轉送。Although the support pins 132A-132C can be raised as in the embodiment described above for taking the wafer W from the transfer arm TA to the support pins 132A-132C, the invention is not limited. For this example. For example, if the transfer arm TA employs a structure that can be moved up/down, the transfer arm TA can be lowered to transfer the wafer W to the front ends of the support pins 132A-132C. In this example, the Z-direction drive mechanism 138Z is first driven to raise the support pins 132A-132C along the Z-axis, and then the transfer arm TA carrying the wafer W is placed on the table 112. Above. The transfer arm TA is then lowered to place the wafer W onto the support pins 132A-132C. Therefore, the wafer W can be transferred while the support pins 132A-132C are still being raised.
應注到的是,如果當該轉送臂TA如圖9A所示地被放置於該桌台112上方時該晶圓W已經被誤對準於水平方向上(即,如果該晶圓W的中心Cw已相關於處在該參考位置Wst的晶圓的中心(參考中心)Ct被誤對準)的話,則在此誤對準狀態下的該晶圓W被該等支撐銷132A-132C向上舉起。It should be noted that if the transfer arm TA is placed over the table 112 as shown in FIG. 9A, the wafer W has been misaligned in the horizontal direction (ie, if the center of the wafer W is If the Cw has been misaligned with respect to the center (reference center) Ct of the wafer at the reference position Wst, the wafer W in the misaligned state is lifted up by the support pins 132A-132C. Start.
該晶圓W之沿著水平方向的誤對準將在該晶圓W被維持在該等支撐銷132A-132C上時被偵測到且將可藉由後續的放置處理(步驟S120-S140)沿著水平方向驅動該等支撐銷132A-132C來加以矯正。因為這可在將該晶圓轉送至該等支撐銷132A-132C之後立即讓該轉送臂TA開始下一個操作(如,轉送另一晶圓),所以可改善晶圓處理的產出率。The misalignment of the wafer W along the horizontal direction will be detected while the wafer W is being maintained on the support pins 132A-132C and will be processed by subsequent placement processes (steps S120-S140). The support pins 132A-132C are driven in a horizontal direction for correction. Since this allows the transfer arm TA to begin the next operation (e.g., transfer to another wafer) immediately after the wafer is transferred to the support pins 132A-132C, the yield of wafer processing can be improved.
在該晶圓放置處理中,該晶圓W的位置在步驟S120中用晶圓位置偵測單元150來偵測。在此步驟中,該晶圓W在該水平方向上的位置是在晶圓仍被保持在該等支撐銷132A-132C的時候被偵測的。詳言之,晶圓W的位置係如上文中所描述的根據來自測量場域153A-153C的影像資料輸出來加以偵測的,該影像資料輸出係由影像捕捉機構152A-152C在發射自照明光源154A-154C的光線輔助下捕捉影像所產生的。例如,該晶圓W的中心可被偵測用以根據在該輸出影像資料中被偵測到的該晶圓W的圓周邊緣的輪廓來代表該晶圓W的位置。In the wafer placement process, the position of the wafer W is detected by the wafer position detecting unit 150 in step S120. In this step, the position of the wafer W in the horizontal direction is detected while the wafer is still held at the support pins 132A-132C. In particular, the position of the wafer W is detected based on the image data output from the measurement fields 153A-153C as described above, and the image data output is emitted from the illumination source by the image capture mechanism 152A-152C. The 154A-154C's light assists in capturing images produced by the image. For example, the center of the wafer W can be detected to represent the position of the wafer W based on the contour of the circumferential edge of the wafer W detected in the output image data.
接下來,在步驟S130作出該晶圓W是否被誤對準的決定。詳言之,晶圓W在水平方向上的誤對準程度係根據偵測到的晶圓位置來決定的,且如果該誤對準程度是在一預定之可容許的誤對準範圍的話,則該晶圓W被判定為是被對準,而如果該誤對準的程度是在該預定之可容許的誤對準範圍之外的話,則該晶圓W即被判定為被誤對準。Next, a decision is made as to whether or not the wafer W is misaligned in step S130. In detail, the degree of misalignment of the wafer W in the horizontal direction is determined according to the detected wafer position, and if the degree of misalignment is within a predetermined allowable misalignment range, The wafer W is determined to be aligned, and if the degree of misalignment is outside the predetermined allowable misalignment range, the wafer W is determined to be misaligned. .
例如,當該晶圓W的中心被偵測用以代表該晶圓W的位置時,該晶圓W的中心相關於位在該參考位置Wst的晶圓的中心(參考中心)的偏差程度即被計算作為代表該晶圓W的誤對準程度的誤對準量。應注意的是,該晶園W的誤對準量可用一有別於上文所述的方法來加以計算。例如,該誤對準量可藉由比較該晶圓W之亮區與暗區的比例(亮/暗比例)與位在該參考位置Wst的晶圓的亮/暗比例來計算,或該誤對準量可藉由比較晶圓輪廓的圖案與位在該參考位置Wst的晶圓的輪廓圖案來計算。For example, when the center of the wafer W is detected to represent the position of the wafer W, the center of the wafer W is related to the deviation of the center (reference center) of the wafer at the reference position Wst. It is calculated as the amount of misalignment representing the degree of misalignment of the wafer W. It should be noted that the amount of misalignment of the crystal field W can be calculated by a method different from that described above. For example, the misalignment amount can be calculated by comparing the ratio of the bright area to the dark area (light/dark ratio) of the wafer W to the light/dark ratio of the wafer located at the reference position Wst, or the error The amount of alignment can be calculated by comparing the pattern of the wafer profile with the contour pattern of the wafer at the reference position Wst.
如果在步驟S130作出的決定是晶圓W沒有被誤對準的話,則該等支撐銷132A-132C單純地在步驟S150中被降低用以將晶圓W放在桌台112上。在另一方面,晶圓W被判定有被誤對準的話,則在步驟S140中X方向驅動機構138X及Y方向驅動機構138Y被驅動用以沿著該水平方向驅動該等支撐銷132A-132C以實施晶圓位置的矯正。例如,如果該晶圓W如圖9C所示地被誤對準於X方向上的話,則只有該X方向驅動機構138X被驅動用以驅動該等支撐銷132A-132C於該+X方向上。因此,該晶圓W被放置,用以讓該晶圓W的中心Cw與位在該參考位置Wst的晶圓的中心Ct對準,如圖9D所示。If the decision made in step S130 is that the wafer W is not misaligned, the support pins 132A-132C are simply lowered in step S150 for placing the wafer W on the table 112. On the other hand, if the wafer W is determined to be misaligned, the X-direction driving mechanism 138X and the Y-direction driving mechanism 138Y are driven to drive the support pins 132A-132C along the horizontal direction in step S140. To implement the correction of the wafer position. For example, if the wafer W is misaligned in the X direction as shown in FIG. 9C, then only the X direction drive mechanism 138X is driven to drive the support pins 132A-132C in the +X direction. Therefore, the wafer W is placed to align the center Cw of the wafer W with the center Ct of the wafer positioned at the reference position Wst as shown in FIG. 9D.
應注意的是,當矯正該晶圓W的位置時,晶圓W的誤對準程度及方向可先被計算,然後該等支撐銷132A-132C可根據計算出來的該晶圓W的誤對準程度與特定的方向被驅動於該水平方向上。或者,該等支撐銷132A-132C可以預定的增量被驅動於該水平方向上且該晶圓W可在該等支撐銷每一次被驅動該預定的增量時藉由用該等影像捕捉機構152A-152C來偵測並確認該晶圓W的位置而被移動至該參考位置。It should be noted that when the position of the wafer W is corrected, the degree of misalignment and direction of the wafer W may be calculated first, and then the support pins 132A-132C may be based on the calculated mismatch of the wafer W. The quasi-degree and specific direction are driven in the horizontal direction. Alternatively, the support pins 132A-132C can be driven in the horizontal direction by a predetermined increment and the wafer W can be used by the image capture mechanism each time the support pins are driven the predetermined increment The 152A-152C detects and confirms the position of the wafer W and is moved to the reference position.
一但該晶圓放置處理(步驟S120至S140)結束之後,該等支撐銷132A-132C即在步驟S150被降低用以將晶圓W放在該桌台112上。詳言之,該Z方向驅動機構138Z被驅動用以將該等支撐銷132A-132C降低來將晶圓W放到桌台112上,如圖9D所示。因此,晶圓W在其水平方向的位置經過矯正之後被放在該桌台112上。該晶圓轉送處理即結束。Once the wafer placement process (steps S120 to S140) is completed, the support pins 132A-132C are lowered in step S150 to place the wafer W on the table 112. In particular, the Z-direction drive mechanism 138Z is driven to lower the support pins 132A-132C to place the wafer W onto the table 112, as shown in Figure 9D. Therefore, the wafer W is placed on the table 112 after being corrected in its horizontal direction. The wafer transfer process ends.
該等支撐銷132A-132C的前端被作成當該等支撐銷132A-132C被降低時可經由穿孔113A-113C收回到一個低於該桌台112的下表面之下的位置是較佳的,用以防止支撐銷132A-132C妨礙到該桌台112的轉動。Preferably, the front ends of the support pins 132A-132C are retractable through the perforations 113A-113C to a position below the lower surface of the table 112 when the support pins 132A-132C are lowered. To prevent the support pins 132A-132C from interfering with the rotation of the table 112.
此外,如果晶圓W被誤對準達到一極大的程度使得晶圓W的邊緣無法於圓8的步驟120中在相應於測量場域153A-153C的影像資料輸出中被偵測到的話,則晶圓的誤對準可在步驟S140中藉由如上文中所描述之依據測量場域153A-153C被判定之白/黑狀態的特定組合所決定之誤對準矯正方向來加以矯正。在此例子中,即使是在該晶圓W被誤對準達一極大的程度使得晶緣邊緣無法被偵測到,該晶圓誤對準仍可被矯正。或者,該晶圓邊緣可在將該晶圓以預定的增量驅動於由該白/黑判斷的結果所決定的誤對準矯正方向直到該晶圓W的邊緣移入到所有測量場域153A-153C之後於步驟S120中被偵測到,然後後續的處理即可被執行。In addition, if the wafer W is misaligned to such an extent that the edge of the wafer W cannot be detected in the image data output corresponding to the measurement fields 153A-153C in the step 120 of the circle 8, then the crystal The misalignment of the circle can be corrected in step S140 by the misalignment correction direction determined by the particular combination of the determined white/black states of the measurement fields 153A-153C as described above. In this example, the wafer misalignment can be corrected even if the wafer W is misaligned to such an extent that the edge of the edge cannot be detected. Alternatively, the wafer edge can be driven in a predetermined increment by the wafer in a predetermined increment to the misalignment correction direction determined by the result of the white/black determination until the edge of the wafer W is moved into all measurement fields 153A- 153C is then detected in step S120, and subsequent processing can be performed.
再者,雖然該基材轉送裝置130在此實施例中是被用來將晶圓W經由圖8的處理從該轉送臂TA轉送至桌台112,但該基材轉送裝置130亦可在將晶材W從該桌台112轉送至該轉送臂TA時藉由用該等支撐銷132A-132C將該晶圓W舉離該桌台112,偵測在支撐銷上該晶圓W的位置並在矯正晶圓W的位置之後將晶圓W轉送至該轉送臂TA被使用到。藉由在此處理中使用該基材轉送裝置,該晶圓W可被移動至一個位置,在該位置處該晶圓可在它被誤對準達到晶圓位置無法單純地驅動該等支撐銷132A-132C於該水平方向上來加以矯正之一極大的程度時它至少可被該轉送臂TA取得。Furthermore, although the substrate transfer device 130 is used in this embodiment to transfer the wafer W from the transfer arm TA to the table 112 via the process of FIG. 8, the substrate transfer device 130 may also When the crystal material W is transferred from the table 112 to the transfer arm TA, the wafer W is lifted off the table 112 by the support pins 132A-132C, and the position of the wafer W on the support pin is detected. The transfer of the wafer W to the transfer arm TA after the position of the wafer W is corrected is used. By using the substrate transfer device in this process, the wafer W can be moved to a position where the wafer can not simply drive the support pins if it is misaligned to the wafer position. 132A-132C can be at least obtained by the transfer arm TA when it is corrected to a great extent in the horizontal direction.
如上文所述,該等支撐銷132A-132C被允許可移動於該水平方向上(XY方向),因此在已被放在該轉送臂TA上的晶圓W被送至該等支撐銷132A-132C上之後,載負該晶圓W的支撐銷132A-132C可在無需使用到該轉送臂TA之下將晶圓W驅動於該水平方向上。因此,晶圓W的誤對準可被適當地矯正。此外,該轉送臂TA在將晶圓轉送至該等支撐銷132A-132C之後可立即從事另一操作(如,另一晶圓的轉送)。因此,晶圓處理產出率可被改善。As described above, the support pins 132A-132C are allowed to be movable in the horizontal direction (XY direction), so that the wafer W that has been placed on the transfer arm TA is sent to the support pins 132A- After 132C, the support pins 132A-132C carrying the wafer W can drive the wafer W in the horizontal direction without using the transfer arm TA. Therefore, misalignment of the wafer W can be appropriately corrected. In addition, the transfer arm TA can immediately perform another operation (eg, transfer of another wafer) after transferring the wafer to the support pins 132A-132C. Therefore, the wafer processing yield can be improved.
此外,因為晶圓W是透過具有高解析度且可高速驅動操作之X方向驅動機構138X與Y方向驅動機構138Y被放置在水平方向上,所以晶圓W可被快速地放置在該桌台112的放置表面上的正確位置(參考位置)處。因此,晶圓處理產出率可進一步被改善,且在此同時,被放在桌台112的晶圓放置表面上的晶圓W可用一可靠且精確的方式加以處理。In addition, since the wafer W is placed in the horizontal direction through the X-direction driving mechanism 138X and the Y-direction driving mechanism 138Y having high resolution and high-speed driving operation, the wafer W can be quickly placed on the table 112. Place the correct position (reference position) on the surface. Therefore, the wafer processing yield can be further improved, and at the same time, the wafer W placed on the wafer placement surface of the table 112 can be processed in a reliable and accurate manner.
再者,該基材轉送裝置130(其在此實施例中為一獨立於該桌台單元110之外的裝置)被允許能夠採用一簡單的結構。因為該基材轉送裝置130可以高自由度被安裝在該處理室內,所以它可以被使用在各種處理室中。又,因為桌台單元110基材轉送裝置130是以彼此獨立的裝置被提供,所以桌台112能夠以高速來轉動。採用於該基材轉送裝置130中的結構(其包括用來沿著該水平方向驅動該等支撐銷132A-132C之X方向驅動機構138X與Y方向驅動機構138Y)夠實施高精確度的晶圓W的位置矯正。Moreover, the substrate transfer device 130 (which in this embodiment is a device independent of the table unit 110) is allowed to adopt a simple structure. Since the substrate transfer device 130 can be installed in the processing chamber with a high degree of freedom, it can be used in various processing chambers. Further, since the table base unit 110 substrate transfer device 130 is provided by devices independent of each other, the table 112 can be rotated at a high speed. The structure employed in the substrate transfer device 130 (which includes the X-direction drive mechanism 138X and the Y-direction drive mechanism 138Y for driving the support pins 132A-132C along the horizontal direction) enables high-accuracy wafers Position correction of W.
此外,在此實施例中的基材轉運裝置130係藉由沿著水平方向上驅動該等支撐銷132A-132C來矯正任何位置上的誤對準,而不是藉由沿水平方向驅動桌台來矯正位置誤對準。因此,即使是在晶圓W被誤對準一極大的程度使得晶圓W的邊緣無法被基材位置偵測單元150偵測到,由該等支撐銷132A-132C所支撐的晶圓仍可沿著水平骯向被移位置該基材位置偵測單元150可偵測到該晶圓的位置處。因此,即使是晶圓W被誤對準一極大的程度,晶圓的位置仍可被偵測到,該誤對準因而可被快速地矯正。Further, the substrate transfer device 130 in this embodiment corrects misalignment at any position by driving the support pins 132A-132C in the horizontal direction, instead of driving the table in the horizontal direction. Correct the misalignment of the position. Therefore, even if the wafer W is misaligned to a great extent, the edge of the wafer W cannot be detected by the substrate position detecting unit 150, and the wafer supported by the support pins 132A-132C can still be used. The substrate position detecting unit 150 can detect the position of the wafer along the horizontally displaced position. Therefore, even if the wafer W is misaligned to a great extent, the position of the wafer can be detected, and the misalignment can be quickly corrected.
晶圓W可藉由偵測形成在該晶圓W上的一方位平坦部分,一缺口或類此者來對準。但,此方法需要轉動該晶圓W至少一圈。相反地,以該水平方向來表現的該晶圓的誤對準在此實施例中係藉由使用影像捕捉機構152A-152C來偵測,而無需將該晶圓W轉動。因此,誤對準偵測所需的時間長度可被大幅地縮短,進而改善晶圓處理產出率。Wafer W can be aligned by detecting an azimuthal flat portion, a gap or the like formed on the wafer W. However, this method requires rotating the wafer W at least one turn. Conversely, misalignment of the wafer in this horizontal direction is detected in this embodiment by using image capture mechanisms 152A-152C without rotating the wafer W. Therefore, the length of time required for misalignment detection can be greatly shortened, thereby improving the wafer processing yield.
此外,在晶圓從轉送臂TA被轉送至該等支撐銷132A-132C之後,該晶圓放置處理即可立刻被執行用以在晶圓W被放到該桌台112的晶圓放置表面上之前將晶圓W沿著水平方向放置,這可縮短放置處理被完成之前的時間長度。因此,晶圓處理產出預可被改善。In addition, after the wafer is transferred from the transfer arm TA to the support pins 132A-132C, the wafer placement process can be performed immediately on the wafer placement surface on which the wafer W is placed on the table 112. The wafer W was previously placed in the horizontal direction, which shortens the length of time before the placement process is completed. Therefore, wafer processing output can be improved.
再者,在此實施例的該基材轉運裝置130中的支撐銷132A-132C被方向驅動機構138Z所驅動用以將支撐銷132A-132C的前端突伸穿過穿孔113A-113C及收回。雖然在此實施例的該基材轉運裝置130中的支撐銷132A-132C可在它們的前端仍突伸穿過穿孔113A-113C超過該桌台112的放置平面之上時在各自對應的穿孔113-113C內被X方向驅動機構138X與Y方向驅動機構138Y驅動於水平方向上,但本發明並不侷限於此例子的結構。Further, the support pins 132A-132C in the substrate transfer device 130 of this embodiment are driven by the direction drive mechanism 138Z to project the front ends of the support pins 132A-132C through the through holes 113A-113C and retract. Although the support pins 132A-132C in the substrate transfer device 130 of this embodiment may have their respective corresponding perforations 113 when their front ends still protrude through the perforations 113A-113C beyond the placement plane of the table 112. The -113C is driven in the horizontal direction by the X-direction drive mechanism 138X and the Y-direction drive mechanism 138Y, but the present invention is not limited to the configuration of this example.
例如,在此基材轉運裝置130中的支撐銷132A-132C可如圖10所示地被設置在該桌台116的支撐軸114的周圍相關於桌台116的半徑更外圍地彼此間隔開來的位置處。此結構可讓該基材被支撐在該等支撐銷上而無需在桌台116上形成可讓該等支撐銷132A-132C穿過的穿孔113A-113C。此外,因為支撐銷132A-132C沿著水平方向被驅動的程度並不受限於穿孔113A-113C的直徑,所以支撐銷132A-132C可在水平方向上被移位一更大的程度。亦即,在晶圓誤對準矯正或晶圓位置調整期間晶圓在水平方向上被移位的程度可被加大。For example, the support pins 132A-132C in the substrate transfer device 130 may be disposed around the support shaft 114 of the table 116 as shown in FIG. 10, spaced apart from each other with respect to the radius of the table 116. The location. This configuration allows the substrate to be supported on the support pins without the need to form perforations 113A-113C on the table 116 that allow the support pins 132A-132C to pass through. Further, since the extent to which the support pins 132A-132C are driven in the horizontal direction is not limited to the diameter of the perforations 113A-113C, the support pins 132A-132C can be displaced by a greater extent in the horizontal direction. That is, the extent to which the wafer is displaced in the horizontal direction during wafer misalignment correction or wafer position adjustment can be increased.
應注意的是,在圖10所示之支撐銷132A-132C被設置在相關於桌台116更外圍的結構中,因為桌台的直徑變大所以支撐銷將可被設定成更靠近晶圓W的邊緣。因此,當本發明被使用在一處理室中且晶圓W的邊緣在處理室中接受處理時,採用支撐銷132A-132C相關於該桌台係被設置在較內圍處之圖1所示的結構是較佳的。It should be noted that the support pins 132A-132C shown in FIG. 10 are disposed in a structure related to the periphery of the table 116. Since the diameter of the table becomes large, the support pins can be set closer to the wafer W. the edge of. Thus, when the present invention is used in a processing chamber and the edges of the wafer W are processed in the processing chamber, support pins 132A-132C are employed in relation to which the table is disposed at a more inner periphery as shown in FIG. The structure is preferred.
再者,雖然本發明已經以晶圓W在水平方向上的的誤對準可用三個影像捕捉機構152A-152C來偵測的實施例為例子加以說明,但本發明並不侷限於此例子且晶圓W在水平方向上的誤對準可用一單一影像捕捉機構或兩個影像捕捉機構來偵測。又,除了用CCD影像感測器或CCD照相機所構成的影像捕捉機構152A-152C之外,用更種光電感測器,超音波感測器及類此者所構成的影像捕捉機構亦可被使用。在此實施例中的支撐銷132A-132C係被安裝在概成環狀的安裝板135上之彼此間隔開來的位置處,如圖3所示,因此之故,晶圓的任何誤對準會將該安裝板135傾斜用以造成在該支撐板136在力矩上的改變。因此,一力矩感測器可被安裝在該支撐板136上用以根據在力矩上的改變來偵測晶圓位置或晶圓誤對準。Furthermore, although the present invention has been described by way of an example in which the misalignment of the wafer W in the horizontal direction can be detected by the three image capturing mechanisms 152A-152C, the present invention is not limited to this example. The misalignment of the wafer W in the horizontal direction can be detected by a single image capturing mechanism or two image capturing mechanisms. Moreover, in addition to the image capturing mechanism 152A-152C composed of a CCD image sensor or a CCD camera, an image capturing mechanism composed of a more photodetector, an ultrasonic sensor, and the like can be used. use. The support pins 132A-132C in this embodiment are mounted at positions spaced apart from each other on the generally annular mounting plate 135, as shown in FIG. 3, and thus, any misalignment of the wafer The mounting plate 135 will be tilted to cause a change in torque in the support plate 136. Therefore, a torque sensor can be mounted on the support plate 136 for detecting wafer position or wafer misalignment based on changes in torque.
接下來,一種採用了上述之基材轉送裝置的基材處理設備的例子將配合附圖加以說明。圖11示意地顯示出被採用於本發明的實施例中之基材處理設備中的結構的剖面圖。Next, an example of a substrate processing apparatus using the above-described substrate transfer device will be described with reference to the drawings. Figure 11 is a schematic cross-sectional view showing the structure employed in the substrate processing apparatus in the embodiment of the present invention.
一基材處理設備300包含一處理單元310其包括複數個處理室有多種處理(譬如像是薄膜形成處理及蝕刻處理)在低壓環境下於這些處理室中實施於晶圓上,及一轉送單元320其載負晶圓W進/出該處理單元310。A substrate processing apparatus 300 includes a processing unit 310 including a plurality of processing chambers having various processes (such as, for example, a film forming process and an etching process) implemented in the processing chambers on the wafer in a low pressure environment, and a transfer unit 320 carries the negative wafer W into/out of the processing unit 310.
首先,將描述可被使用於該轉送單元320內的結構。該轉送單元320包括一轉送室330存放在每一匣容器332內的多片(譬如,25片)晶圓W經由該轉送室被轉送於該基材處理設備300內。三個匣台331A-331C相應於轉送室330的三個閘閥333A-333C被安裝,且匣容器332A-332C可分別被設置在匣台331A-331C上。First, a structure that can be used in the transfer unit 320 will be described. The transfer unit 320 includes a transfer chamber 330. A plurality of (for example, 25) wafers W stored in each of the helium containers 332 are transferred to the substrate processing apparatus 300 via the transfer chamber. Three gates 331A-331C are mounted corresponding to the three gate valves 333A-333C of the transfer chamber 330, and the helium vessels 332A-332C are respectively disposed on the gates 331A-331C.
此外,一用於處理之前將前晶圓預對準之預對準處理室(定向器)336及一代表一後處理室之清潔室400被設置在該轉送室330處,其中已被沉積於該晶圓W上的任何物質在該處理之後於該清潔室中被去除掉。一轉台338及一用來偵測放置在轉台338上的晶圓W的邊緣的光學感測器339被安裝在該預對準室336內,且藉由轉動在該轉台338上的晶圓W並用該光學感測器339偵測形成在該晶圓W的邊緣上的缺口,該晶圓W可在該預對準處理室中被對準。一注意到的是,一可被使用在該清潔處理室400內的結構例將稍後於下文中描述。In addition, a pre-alignment processing chamber (orienter) 336 for pre-aligning the front wafer and a cleaning chamber 400 representing a post-processing chamber are disposed at the transfer chamber 330, wherein the deposition chamber 330 has been deposited Any material on the wafer W is removed in the clean room after the treatment. A turntable 338 and an optical sensor 339 for detecting the edge of the wafer W placed on the turntable 338 are mounted in the pre-aligned chamber 336 by rotating the wafer W on the turntable 338. The optical sensor 339 is used to detect a gap formed on the edge of the wafer W, and the wafer W can be aligned in the pre-aligned processing chamber. It is noted that a structural example that can be used in the cleaning processing chamber 400 will be described later.
一能夠沿著長側(沿著圖11中的箭頭所標示的方向)自由地滑移的轉送機器人370被安裝在該轉送室330內部。轉送機器人370配備有轉送臂337A及337B,晶圓W可被載負於其上。轉送臂337A及337B能夠彎曲/伸展,上/下移動及轉動,且被用來帶著晶圓W進/出該等匣容器332A-332C,該預動準處理室336,該清潔處理室400,及負載鎖定室360M及360N,這將於下文中描述。應注意的是,配備有兩個轉送臂373A及373B的該轉送機器人370能夠取得已處理過的晶圓W,同時將一在該負載鎖定室360M或360N內之新的未經處理的晶圓W送至該預動準處理室336,該清潔處理室400或類此者處。A transfer robot 370 capable of freely sliding along the long side (in the direction indicated by the arrow in Fig. 11) is installed inside the transfer chamber 330. The transfer robot 370 is equipped with transfer arms 337A and 337B to which the wafer W can be carried. The transfer arms 337A and 337B can be bent/stretched, moved up and down, and used to carry the wafer W into/out of the helium containers 332A-332C, the pre-action processing chamber 336, the cleaning chamber 400 And load lock chambers 360M and 360N, which will be described below. It should be noted that the transfer robot 370 equipped with two transfer arms 373A and 373B can take the processed wafer W while simultaneously placing a new unprocessed wafer in the load lock chamber 360M or 360N. W is sent to the pre-action processing chamber 336, which cleans the chamber 400 or the like.
接下來,可被採用在該處理單元310內的結構的例子將被說明。處理單元310可採用一叢集工具結構,譬如圖11中所示者。亦即,該處理單元310包括一採用一多邊形(如,六邊形),具有複數個(如,六個)處理室340A-340F之共用的轉送室350,晶圓W在該等處理室內接受特定種類的處理,這些處理室分別透過設在該共用的轉送室350周圍之閘閥344A-344C與轉送室350相連接。Next, an example of a structure that can be employed in the processing unit 310 will be explained. Processing unit 310 may employ a cluster tool structure, as shown in FIG. That is, the processing unit 310 includes a common transfer chamber 350 having a plurality of (eg, six) processing chambers 340A-340F using a polygon (eg, a hexagon) in which the wafer W is received. For a particular type of processing, the processing chambers are coupled to the transfer chamber 350 via gate valves 344A-344C disposed about the common transfer chamber 350.
其上將被放置薑圓W的桌台342A-342C分別被安裝在處理室340A-340C內,且在桌台342上的晶圓W根據事先儲存在儲存媒體內(譬如,一控制單元500內)之處理配方或類此者而在該等處理室內接受處理(譬如,薄膜形成處理及蝕刻)。應注意的是,處理室340的數量並不侷限於圖11所示的數量。The tables 342A-342C on which the ginger circles W are placed are respectively installed in the processing chambers 340A-340C, and the wafers W on the table 342 are stored in advance in the storage medium (for example, in a control unit 500). The treatment formulation or the like is subjected to treatment in such treatment chambers (for example, film formation treatment and etching). It should be noted that the number of process chambers 340 is not limited to the number shown in FIG.
此外,與轉送室330交換晶圓之負載鎖定室360M及360N亦被設置在該共用的轉送室350周圍。在該第一及第二負載鎖定室360M及360N處,晶圓W分別被安裝於負載鎖定室內之轉送台364M及364N暫時地固持住且在晶圓接受了壓力調整之後,它們被轉送於該真空壓力側共用的轉送室350與該大氣壓力側的轉送室330之間。因此,為了要維持必要的氣密程度,負載鎖定室360M及360N係透過閘閥354M及354N與該共同的轉送室350連接且透過閘閥362M及362N與該轉送室330連接。Further, load lock chambers 360M and 360N that exchange wafers with transfer chamber 330 are also disposed around the common transfer chamber 350. At the first and second load lock chambers 360M and 360N, the wafers W are temporarily held by the transfer tables 364M and 364N respectively mounted in the load lock chamber, and after the wafers are subjected to pressure adjustment, they are transferred to the wafers The transfer chamber 350 shared by the vacuum pressure side is located between the transfer chamber 330 on the atmospheric pressure side. Therefore, in order to maintain the necessary degree of airtightness, the load lock chambers 360M and 360N are connected to the common transfer chamber 350 through the gate valves 354M and 354N, and are connected to the transfer chamber 330 through the gate valves 362M and 362N.
一可沿著設置在該共同的轉送室350的長側上的導軌384自由地滑移的轉送機器人380被安裝在該共同的轉送室350內。該轉送機器人380配備有其上可載負該晶圓W的轉送臂383A及383B。轉送臂383A及383B能夠彎曲/伸展,上/下移動及轉動,且被用來帶著晶圓W進/出各個處理室340A-340C及負載鎖定室360M及360N。A transfer robot 380 that is free to slide along guide rails 384 disposed on the long side of the common transfer chamber 350 is installed in the common transfer chamber 350. The transfer robot 380 is equipped with transfer arms 383A and 383B on which the wafer W can be loaded. Transfer arms 383A and 383B are capable of bending/stretching, moving up and down, and are used to carry wafer W into/out of process chambers 340A-340C and load lock chambers 360M and 360N.
轉送機器人380可朝向該共同轉送室350的底端滑移用以帶著晶圓W進/出負載鎖定室360M及360N與處理室340A及340F,且可朝向該共同轉送室350的前端滑移用以帶著晶圓W進/出四個處理室340B-340E。應注意的是,配備有轉送臂383A及383B的轉送機器人380能夠取得已被處理過的晶圓W,在此同時亦能將在處理室340A-340F處的一新的,未經處理的晶圓W送至負載鎖定室360M及360N。The transfer robot 380 can be slid toward the bottom end of the common transfer chamber 350 for carrying the wafer W into/out of the load lock chambers 360M and 360N and the process chambers 340A and 340F, and can be slid toward the front end of the common transfer chamber 350. It is used to carry in and out of the four processing chambers 340B-340E with the wafer W. It should be noted that the transfer robot 380 equipped with the transfer arms 383A and 383B is capable of taking the processed wafer W while also providing a new, untreated crystal at the processing chambers 340A-340F. The circle W is sent to the load lock chambers 360M and 360N.
一注意到的是,該基材處理設備300包括該控制單元500其控制著在整個基詞矮處理是備中執行的操作,包括轉送機器人370及370的控制,閘閥333,344,354及362的操作,預對準處理室336與清潔處理室400的操作。控制單元500包含一構成該控制單元主體的CPU(中央處理單元),一ROM其儲存了CPU執行處理所需之資料,一RAM其包括該CPU在執行各種資料處理時所使用的一記憶體區,一儲存機構,譬如像是一硬碟機(HDD)或一記憶體,該CPU控制各式構件時所用到的程式與各式資料都被儲存於此,一液晶顯示器其顯示一操作畫面,一選擇畫面及類此者,一輸入/輸出機構其可讓操作者輸入各種資料(譬如,處理配方及將被編輯的資料)且亦可將各種資料(譬如,處理配方及處理日誌)輸入到一特定的儲存媒體中,各種控制器用來控制構成該基材處理設備之各個構件。It is noted that the substrate processing apparatus 300 includes the control unit 500 which controls the operations performed throughout the basic short processing, including the control of the transfer robots 370 and 370, the gate valves 333, 344, 354 and 362. Operation, pre-aligning the operation of the processing chamber 336 with the cleaning processing chamber 400. The control unit 500 includes a CPU (Central Processing Unit) constituting the main body of the control unit, a ROM storing data required for the CPU to execute processing, and a RAM including a memory area used by the CPU when performing various data processing. a storage mechanism, such as a hard disk drive (HDD) or a memory, the program and various types of data used by the CPU to control various components are stored therein, and a liquid crystal display displays an operation screen. A selection screen and the like, an input/output mechanism that allows the operator to input various materials (for example, processing recipes and materials to be edited) and also input various materials (for example, processing recipes and processing logs) to In a particular storage medium, various controllers are used to control the various components that make up the substrate processing apparatus.
在此實施例中的基材轉送裝置可配合每一處理室340A-340F,該預動準處理室336及該清潔處理室400被使用,用以將該基材W轉送於如上文所描述般地建構的基材處理設備300內的轉送臂與桌台之間。此外,該基材轉送裝置130亦可用在一測量處理室中(如,一薄膜厚度測量處理室,一微粒測量處理室或類此者中,未示出),它們可被設置在該基材處理設備300內的轉送室330處用以測量已執行於晶圓上的處理結果。一可在該基材轉送裝置130被用在清潔處理室400中時被使用的特定結構例已參照此實施例加以說明。The substrate transfer device in this embodiment can be coupled to each of the processing chambers 340A-340F, and the pre-action processing chamber 336 and the cleaning processing chamber 400 are used to transfer the substrate W to the same as described above. Between the transfer arm and the table in the substrate processing apparatus 300. In addition, the substrate transfer device 130 can also be used in a measurement processing chamber (eg, a film thickness measurement processing chamber, a particle measurement processing chamber or the like, not shown), which can be disposed on the substrate. The transfer chamber 330 within the processing device 300 is used to measure the processing results that have been performed on the wafer. A specific configuration example that can be used when the substrate transfer device 130 is used in the cleaning process chamber 400 has been described with reference to this embodiment.
接下來,將說明該基材處理設備300的操作。該控制單元500根據特定的程式讓該基材處理設備300忙於操作中。例如,一已經被轉送臂370從匣容器332A-332C的一匣容器中攜出的晶圓W被帶入到該預對準處理室336中用以接受定位處理。已接受過定位處理的該晶圓W然後被攜出該預對準處理室336並被帶入到負載鎖定室360M或360N中。如果一已接受所有必要的處理的晶圓W出現在負載鎖定室360M或360N中的話,則該經過處理的晶圓W會被重新取得且一未經處理的晶圓W被轉送至該負載鎖定室內。Next, the operation of the substrate processing apparatus 300 will be explained. The control unit 500 causes the substrate processing apparatus 300 to be busy in operation in accordance with a particular program. For example, a wafer W that has been carried by the transfer arm 370 from a container of the enamel containers 332A-332C is brought into the pre-alignment processing chamber 336 for acceptance of the positioning process. The wafer W that has undergone the positioning process is then carried out of the pre-alignment processing chamber 336 and brought into the load lock chamber 360M or 360N. If a wafer W that has received all necessary processing appears in the load lock chamber 360M or 360N, the processed wafer W is reacquired and an unprocessed wafer W is transferred to the load lock. indoor.
已被載入到負載鎖定室360M或360N中的經圓W後續被該轉送機器人380帶出該負載鎖定室360M或360N,該轉送機器然後將該晶圓載入到處理室340A-340F中的一個特定的處理室內,該晶圓在該處理室內接受一特定的處理。例如,當已被載入該處理室中的晶圓W被放置到構成一下電極的桌台上時,一特定的處理氣體經由一構成一上電極的蓮蓬頭被送入,該處理氣體然後用施用於該等電極上之預定的高頻功率激發為電漿,然後該特定的處理(譬如蝕刻或薄膜形成處理)用如此產生的電漿來實施於該晶圓W上。一但該處理完成之後,晶圓W即被轉送機器人380攜出該處理室340且如果該晶圓W要接受進一步處理的話,則該轉送機器人會將它攜入到下一個處理室340中。The circle W that has been loaded into the load lock chamber 360M or 360N is subsequently taken out of the load lock chamber 360M or 360N by the transfer robot 380, which then loads the wafer into the process chambers 340A-340F. Within a particular processing chamber, the wafer receives a particular process within the processing chamber. For example, when the wafer W that has been loaded into the processing chamber is placed on the table that constitutes the lower electrode, a specific processing gas is fed through a shower head constituting an upper electrode, and the processing gas is then applied. The predetermined high frequency power on the electrodes is excited into a plasma, and then the specific process (such as etching or film forming process) is performed on the wafer W with the plasma thus generated. Once the process is complete, the wafer W is carried by the transfer robot 380 out of the process chamber 340 and if the wafer W is to undergo further processing, the transfer robot will carry it into the next process chamber 340.
不想要的物質會沉積到已經使用處理氣體所產生的電漿處理過之在該桌台上的該晶圓W的圓周邊緣的底側上。例如,當晶圓W的表面係藉由使用由一碳氟化合物(CF)氣體所產生的電漿來對其表面進行蝕刻的話,則會經由一競爭性反應(聚合物化反應)形成一由碳氟聚合物(CF聚合物)所構成的副產物(沉積物)且該副產物會沉積到該晶圓的邊緣上(如,晶圓W背面的邊緣處,其包括一斜面區域)。Unwanted material deposits onto the bottom side of the circumferential edge of the wafer W that has been treated with the plasma generated by the processing gas on the table. For example, when the surface of the wafer W is etched by using a plasma generated by a fluorocarbon (CF) gas, a carbon is formed via a competitive reaction (polymerization reaction). A by-product (deposit) of the fluoropolymer (CF polymer) and the by-product is deposited on the edge of the wafer (eg, at the edge of the back side of the wafer W, which includes a beveled region).
當其上沉積有這些物質的晶圓W被送回到匣容器332A-332C中的一者內時,晶圓W的邊緣會與該匣容器內的固持部分接觸到,而造成該物質與晶圓分離並落到位在該被回送的晶圓W底下的另一晶圓W的表面上。這會造成形成在該下面的晶圓W上的半導體裝置的一個缺陷。因此,沉積在晶圓W的邊線上的此一物質必需透過清潔處理加以去除。When the wafer W on which these substances are deposited is returned to one of the crucible containers 332A-332C, the edge of the wafer W comes into contact with the holding portion in the crucible container, causing the substance and the crystal The circle separates and falls into the surface of another wafer W underneath the wafer W being returned. This causes a defect in the semiconductor device formed on the underlying wafer W. Therefore, this substance deposited on the edge of the wafer W must be removed by a cleaning process.
在此實施例的基材處理設備300中,已經在各處理室340中接受過處理的該晶圓W經由負載鎖定室360M或360N被轉送至該清潔處理室400,該晶圓W的邊緣在此清潔處理室400中被清潔且只有經過清潔的晶圓W才會被回送至匣容器332A-332C的一者內。因為沉積在晶圓W的邊緣上的任何物質以經由此清潔處理被去除掉,所以在晶圓W被回送至匣容器332A中時不會有不想要的物質屑片從晶圓W上剝落下來,因此在該匣容器內之其它晶圓W的表面就可保持乾淨。In the substrate processing apparatus 300 of this embodiment, the wafer W that has been processed in each processing chamber 340 is transferred to the cleaning processing chamber 400 via the load lock chamber 360M or 360N, and the edge of the wafer W is The wafer W cleaned in the cleaning process chamber 400 and only cleaned is returned to one of the helium containers 332A-332C. Since any substance deposited on the edge of the wafer W is removed through this cleaning process, no undesired material chips are peeled off from the wafer W when the wafer W is returned to the tantalum container 332A. Therefore, the surface of the other wafer W in the crucible container can be kept clean.
一可被使用在該清潔處理室400內的結構例向將加以說明。在此實施例的清潔處理室400內,沉積在置於該轉動桌台112上的晶圓W的邊緣上的物質在該晶圓W透過該桌台112被轉動時照射一特定的光線於該晶圓W的端部區域上而被去除掉。這表示,晶圓W必需被精確地放置在該桌台112上藉以防止在水平方向上的任何誤對準。向將於下文中說明該基材轉送裝置130是如何結合該清潔處理室400被使用。該清潔處理室400可具有一如圖12所示的結構。如圖12所示之清潔處理室400包括一桌台單元110,一基材轉送裝置130,一基材位置偵測單元150及一清潔處理機構410,它們全都設置在一容器402內。A configuration example that can be used in the cleaning processing chamber 400 will be described. In the cleaning process chamber 400 of this embodiment, the substance deposited on the edge of the wafer W placed on the rotating table 112 illuminates a specific light when the wafer W is rotated through the table 112. The end region of the wafer W is removed. This means that the wafer W must be accurately placed on the table 112 to prevent any misalignment in the horizontal direction. How the substrate transfer device 130 is combined with the cleaning process chamber 400 will be described below. The cleaning process chamber 400 can have a structure as shown in FIG. The cleaning processing chamber 400 shown in FIG. 12 includes a table unit 110, a substrate transfer device 130, a substrate position detecting unit 150, and a cleaning processing mechanism 410, all of which are disposed in a container 402.
該清潔機構410包括一雷射單元412及一臭氧產生器414。在該雷設單元412中的雷射光源(未示出)可以是各種雷射中,包括半導體雷射,氣體雷射或固態雷射在內,的任何一種。該雷射單元412的光軸被調整用以將雷射光照射在沉積在該晶圓的邊緣的背面上的物質上。該臭氧產生器414產生將被用作為氧族反應氣體的臭氧(O3 ),用來將沉積在該晶圓的邊緣的背面上的物質P分解並將乳此地產生的臭氧朝向放在該桌台112上的晶圓W的邊緣的被面噴射。雷射單元412與臭氧產生器414的操作是由控制單元200來控制的。應注意到的是,一用來將將臭氧(O3 )以及沉積物質P的分解所產生的二氧化碳(CO2 )及氟(F2 )吸出去的排氣機構(未示出)可被設置在與該臭氧產生器414相面對的位置處。The cleaning mechanism 410 includes a laser unit 412 and an ozone generator 414. The laser source (not shown) in the lightning unit 412 can be any of a variety of lasers, including semiconductor lasers, gas lasers or solid state lasers. The optical axis of the laser unit 412 is adjusted to illuminate the laser light onto a substance deposited on the back side of the edge of the wafer. The ozone generator 414 generates ozone (O 3 ) to be used as an oxygen-based reaction gas for decomposing the substance P deposited on the back surface of the edge of the wafer and placing the ozone generated by the milk toward the table. The edge of the wafer W on the stage 112 is jetted by the surface. The operation of the laser unit 412 and the ozone generator 414 is controlled by the control unit 200. It should be noted that an exhaust mechanism (not shown) for sucking out ozone (O 3 ) and carbon dioxide (CO 2 ) and fluorine (F 2 ) generated by decomposition of the deposition substance P may be set. At a position facing the ozone generator 414.
在該清潔處理室400內實施用以清潔該晶圓W的清潔處理將接下來加以說明。在該清潔處理室400中,該基材轉送裝置130與該基材位置偵測單元150係如上文所描述地被安裝,因此放在該轉送機器人370的轉送臂373上經由轉送埠404被帶進到該容器402中的晶圓W然後可在一被精準地對準的狀態下被放置在桌台112的晶圓放置表面上。即使是已從轉送機器人370被轉送至支征銷332A-332C上的晶圓W被誤對準,該誤對準仍可藉由沿著X方向驅動支撐銷332A-332C來加以矯正而無需使用到該轉送機器人370,因此該轉送機器人370可立即地從事另一晶圓W的轉送操作。The cleaning process for cleaning the wafer W in the cleaning process chamber 400 will be described next. In the cleaning processing chamber 400, the substrate transfer device 130 and the substrate position detecting unit 150 are mounted as described above, and thus are placed on the transfer arm 373 of the transfer robot 370 via the transfer cassette 404. The wafer W that has entered the container 402 can then be placed on the wafer placement surface of the table 112 in a precisely aligned state. Even if the wafer W that has been transferred from the transfer robot 370 to the branch pins 332A-332C is misaligned, the misalignment can be corrected by driving the support pins 332A-332C in the X direction without using To the transfer robot 370, the transfer robot 370 can immediately perform the transfer operation of another wafer W.
然後,該晶圓W的背面的邊緣部分可用清潔機構410來加以清潔。例如,沉積在該晶圓W的邊緣上之CF族聚合物P可藉由將氧族的反應氣體放置成與該CF族聚合物P接觸並照射光線所誘發之分解反應來加以清除掉。應注意的是,不同種類的光線及氣體可如下文所述地在此處理期間被使用。Then, the edge portion of the back surface of the wafer W can be cleaned by the cleaning mechanism 410. For example, the CF group polymer P deposited on the edge of the wafer W can be removed by placing an oxygen-based reaction gas into a decomposition reaction induced by contact with the CF group polymer P and irradiating the light. It should be noted that different types of light and gases may be used during this process as described below.
例如,當在加熱該晶圓W的邊緣用以將溫度保持在一特定的程度(如,約200℃)時,紫外線可被照射在該CF族聚合物P上且一氧族的反應氣體流(如氧氣(O2 ))可被形成在該CF族聚合物P的表面附近。藉由此方法,該CF族聚合物P被分解成為二氧化碳(CO2 )與氟(F2 ),並因而從晶圓上被去除掉。For example, when the edge of the wafer W is heated to maintain the temperature to a certain extent (e.g., about 200 ° C), ultraviolet rays may be irradiated onto the CF group polymer P and an oxygen reactive gas stream (such as oxygen (O 2 )) may be formed near the surface of the CF group polymer P. By this method, the CF group polymer P is decomposed into carbon dioxide (CO 2 ) and fluorine (F 2 ), and thus is removed from the wafer.
或者,雷射光可被用來照射在該CF族聚合物P上同時施加作為氧族反應氣體的臭氧(O3 )與該CF族聚合物P接觸。在此例子中,高能量被局部地送至該CF族聚合物P用以促進該分解反應的處理,該CF族聚合物P可被有效率地去除掉。Alternatively, laser light may be used to illuminate the CF group polymer P while simultaneously applying ozone (O 3 ) as an oxygen group reactive gas to the CF group polymer P. In this example, high energy is locally supplied to the CF group polymer P to facilitate the treatment of the decomposition reaction, and the CF group polymer P can be efficiently removed.
不論採用上述哪一種方法,已沉殿在該晶圓W的邊緣上之沉積物質P都可在無需研磨晶圓W邊緣下被去除掉,因此就無需實施去除掉研磨處理所產生的粉塵的工作且由這些粉塵所引起的污染問題也就不會發生。此外,因為已沉殿在該晶圓W的邊緣上之沉積物質P可在無需產生電漿下被去除掉,所以已經形成在該晶圓W的表面上的薄膜(如,一低k薄膜)可以不受傷害。在此實施例中,該清潔處理係係如上所述地藉由使用雷射光於清潔處理室400中來實施的。Regardless of which of the above methods is used, the deposited material P on the edge of the wafer W can be removed without the need to polish the edge of the wafer W, so that it is not necessary to perform the work of removing the dust generated by the grinding process. And the pollution problem caused by these dusts will not happen. In addition, since the deposited substance P on the edge of the wafer W can be removed without generating plasma, a film (for example, a low-k film) which has been formed on the surface of the wafer W is formed. Can be harmless. In this embodiment, the cleaning process is performed as described above by using laser light in the cleaning process chamber 400.
詳言之,其上放置了該晶圓W的桌台112被轉動,雷射光從該雷射單元412朝向晶圓W的邊緣的背面射出且臭氧(O3 )從該臭氧產生器414被輸出。藉由此方法,任何已沉殿在該晶圓W的邊緣的背面上之沉積物質P都可被化學地分解並去除掉。當沉積的物質P沉殿在一個比雷射光點的直徑大的面積中時,該雷射單元42較佳地被建構成該雷射光點的位置可沿著晶圓W的半徑移動。即使是該沉積物質P是沉殿在一大的面積上,此結構可確保該沉積物質P的完全去除。In detail, the table 112 on which the wafer W is placed is rotated, laser light is emitted from the laser unit 412 toward the back surface of the edge of the wafer W, and ozone (O 3 ) is output from the ozone generator 414. . By this method, any deposited substance P which has been deposited on the back surface of the edge of the wafer W can be chemically decomposed and removed. When the deposited material P is in an area larger than the diameter of the laser spot, the laser unit 42 is preferably constructed such that the position of the laser spot is movable along the radius of the wafer W. Even if the deposition substance P is a large area, the structure can ensure complete removal of the deposition substance P.
一但該清潔處理完成之後,該晶圓W沿著垂直方向被支撐銷132A-132C再次舉起且被轉送至經由該容器402的轉送埠404進入的該轉送機器人370上。該轉送機器人370載負著已經接受清潔處理的該晶圓W經由轉送室330到達該最初的匣容器332A,332B或332C。因為沒有沉積物質P從已清潔過的晶圓W上剝落,所以其它晶圓W的表面可被保持在乾淨的狀態下。Once the cleaning process is completed, the wafer W is lifted again by the support pins 132A-132C in the vertical direction and transferred to the transfer robot 370 that enters via the transfer cassette 404 of the container 402. The transfer robot 370 carries the wafer W that has undergone the cleaning process via the transfer chamber 330 to the initial helium container 332A, 332B or 332C. Since no deposited substance P is peeled off from the cleaned wafer W, the surface of the other wafer W can be kept in a clean state.
如果桌台112是在其上所放置的晶圓W的中心偏離該桌台112的旋轉中心下被轉動的話,則晶圓W將在一偏心的(decentered)狀態下被轉動。如果在該清潔室400(清潔處理即在該室中藉由使用雷射光來去除掉已沉殿在該晶圓W的邊緣的背面上之沉積物質P)中的晶圓W是偏心的話,則該沉積的物質P就會因為雷射光點的直徑很小而無法被被完全去除掉。然而,安裝在該清潔室400被的基材轉送裝置130能夠將晶圓W精確地放置(如,容限在數微米或更小的範圍內)。因此,清潔處理可被非常徹底地實施。If the table 112 is rotated under the center of rotation of the wafer W placed thereon, the wafer W will be rotated in a decentered state. If the wafer W in the clean room 400 (cleaning process in which the laser light is used to remove the deposited material P on the back side of the edge of the wafer W) is eccentric, then The deposited substance P cannot be completely removed because the diameter of the laser spot is small. However, the substrate transfer device 130 mounted on the clean room 400 can accurately place the wafer W (e.g., within a range of several micrometers or less). Therefore, the cleaning process can be implemented very thoroughly.
此外,已從該基材處理設備00內的匣容器332A-332C的一給定的匣容器中取出的晶圓首先被載入到該預對準處理室336及處理室340A-340F中用以接受特定種類的處理,然後被載入一後處理室(譬如該清潔處理室400)中或一測量處理室中。已經重復地被攜載於轉送臂上進/出多個處理室之後被載入該後處理室中的晶圓W極可能已經被嚴重地誤對準。即使是晶圓W在這些情況下已經被誤對準很大的程度了,但使用此實施例的基材轉送裝置130可以不需要將晶圓從該後處理室中取出然後再將它放入該後處理室中,及不需要將該晶圓W再放置於該桌台上。相反地,使用該基材轉送裝置130可藉由沿著水平方向驅動其上支撐著晶圓W的支撐銷132A-132C來立即地且精確地矯正誤對準。因此之故,在該後處理室中使用該基材轉送裝置130可獲得重大的好處。In addition, wafers that have been removed from a given helium vessel of the helium containers 332A-332C within the substrate processing apparatus 00 are first loaded into the pre-alignment processing chamber 336 and processing chambers 340A-340F for use. A particular type of treatment is accepted and then loaded into a post processing chamber (such as the cleaning chamber 400) or a measurement processing chamber. The wafer W that has been loaded into the post-processing chamber after being repeatedly carried on the transfer arm into/out of the plurality of processing chambers may have been heavily misaligned. Even if the wafer W has been misaligned to a large extent in these cases, the substrate transfer device 130 of this embodiment can be used without removing the wafer from the post-processing chamber and then placing it. In the post-processing chamber, it is not necessary to reposition the wafer W on the table. Conversely, the substrate transfer device 130 can be used to immediately and accurately correct misalignment by driving the support pins 132A-132C on which the wafer W is supported in the horizontal direction. For this reason, the use of the substrate transfer device 130 in the aftertreatment chamber provides significant benefits.
雖人本發明已藉由參照附圖所示之本發明的較佳實施例來加以具體的說明,但本發明並不侷限於這些例子且手習此技藝者將可瞭解的是,在形式與細節上的各種變化可在不偏離本發明的精神、範圍與教導下被達成。The present invention has been specifically described with reference to the preferred embodiments of the present invention shown in the drawings, but the invention is not limited to these examples and will be understood by those skilled in the art Various changes in detail can be made without departing from the spirit, scope and teachings of the invention.
130...基材轉送裝置130. . . Substrate transfer device
112...桌台112. . . Table
110...桌台單元110. . . Table unit
150...基材位置偵測單元150. . . Substrate position detecting unit
114...支撐軸114. . . Support shaft
200...控制單元200. . . control unit
132A...支撐銷132A. . . Support pin
132B...支撐銷132B. . . Support pin
132C...支撐銷132C. . . Support pin
W...晶圓W. . . Wafer
136...支撐板136. . . Support plate
135...安裝板135. . . Mounting plate
138X...X方向驅動機構138X. . . X-direction drive mechanism
138Y...Y方向驅動機構138Y. . . Y direction drive mechanism
138Z...Z方向驅動機構138Z. . . Z direction drive mechanism
134...基座134. . . Pedestal
138...支撐銷驅動機構138. . . Support pin drive mechanism
113A...穿孔113A. . . perforation
113B...穿孔113B. . . perforation
113C...穿孔113C. . . perforation
156...安裝基座156. . . Mounting base
152A...影像捕捉機構152A. . . Image capture mechanism
152B...影像捕捉機構152B. . . Image capture mechanism
152C...影像捕捉機構152C. . . Image capture mechanism
154A...照明光源154A. . . Illumination source
154B...照明光源154B. . . Illumination source
154C...照明光源154C. . . Illumination source
153A...測量場域153A. . . Measurement field
153B...測量場域153B. . . Measurement field
153C...測量場域153C. . . Measurement field
TA...轉送臂TA. . . Transfer arm
116...桌台116. . . Table
300...基材處理設備300. . . Substrate processing equipment
310...處理單元310. . . Processing unit
320...轉送單元320. . . Transfer unit
330...轉送室330. . . Transfer room
332...匣容器332. . .匣 container
331A...匣台331A. . . Platform
331B...匣台331B. . . Platform
331C...匣台331C. . . Platform
333A...閘閥333A. . . gate
333B...閘閥333B. . . gate
333C...閘閥333C. . . gate
332A...匣容器332A. . .匣 container
332B...匣容器332B. . .匣 container
332C...匣容器332C. . .匣 container
338...桌台338. . . Table
339...光學感測器339. . . Optical sensor
336...預對準處理室336. . . Pre-alignment processing chamber
370...轉送機器人370. . . Transfer robot
400...清潔處理室400. . . Cleaning treatment room
373A...轉送臂373A. . . Transfer arm
373B...轉送臂373B. . . Transfer arm
360M...負載鎖定室360M. . . Load lock room
360N...負載鎖定室360N. . . Load lock room
340A...處理室340A. . . Processing room
340B...處理室340B. . . Processing room
340C...處理室340C. . . Processing room
340D...處理室340D. . . Processing room
340E...處理室340E. . . Processing room
340F...處理室340F. . . Processing room
344A...閘閥344A. . . gate
344B...閘閥344B. . . gate
344C...閘閥344C. . . gate
344D...閘閥344D. . . gate
344E...閘閥344E. . . gate
344F...閘閥344F. . . gate
342A...桌台342A. . . Table
342B...桌台342B. . . Table
342C...桌台342C. . . Table
342D...桌台342D. . . Table
342E...桌台342E. . . Table
342F...桌台342F. . . Table
500...控制單元500. . . control unit
354M...閘閥354M. . . gate
354N...閘閥354N. . . gate
380...轉送機器人380. . . Transfer robot
260...共用的轉送室260. . . Shared transfer room
350...共用的轉送室350. . . Shared transfer room
383A...轉送臂383A. . . Transfer arm
383B...轉送臂383B. . . Transfer arm
402...容器402. . . container
410...清潔機構410. . . Cleaning agency
412...雷射單元412. . . Laser unit
414...臭氧產生器414. . . Ozone generator
圖1為一立體圖,其顯示出依據本發明的一實施例的該基材轉送裝置,該基材位置偵測單元及該桌台單元;圖2為一側視圖其顯示圖1中之各個裝置的輪廓;圖3為一立體圖,其顯示出用於圖1中之基材轉送裝置內的結構;圖4為一立體圖,其顯示出使用於此實施例中之基材位置偵測單元內的基材偵測機構中的結構;圖5A顯示在各個測量場域中的狀態與該晶圓W的位置之間的關係,這可在該等測量場域都被判定是在一白狀態(亮狀態)時被觀察到,及圖5B顯示支撐銷與晶圓之間的關係,這可在示於圖5A中的誤對準被矯正之後被觀察到;圖6A顯示在各個測量場域中的狀態與該晶圓W的位置之間的關係,這可在該等測量場域中的一者被判定是在一灰色狀態且其它的測量場域是在一白色狀態(亮狀態)時被觀察到,且圖6B顯示支撐銷與晶圓之間的關係,這可在示於圖6A中的誤對準被矯正之後被觀察到;圖7A顯示在各個測量場域中的狀態與該晶圓W的位置之間的關係,這可在該等測量場域中的一者被判定是在一灰狀態,該等測量場域中的一者被判定是在一黑色狀態(暗狀態)且其它的測量場域是在一白色狀態(亮狀態)時被觀察到,且圖7B顯示支撐銷與晶圓之間的關係,這可在示於圖7A中的誤對準被矯正之後被觀察到;圖8為可在此實施例中被實施的晶圓轉送處理的一特定例子的流程圖;圖9A-9E分別顯示被該基材轉送裝置實施的操作的一個例子;圖10為一立體圖,其顯示可被使用於此實施例中的基材轉送裝置內的另一個結構的例子;圖11為一剖面圖其顯示一使用了依據此實施例的基材轉送裝置的基材處理設備的結構的例子;及圖12為一側視圖,其顯示可被使用在配備有此實施例的基材轉送裝置的清潔室內的內部結構的例子。1 is a perspective view showing the substrate transfer device, the substrate position detecting unit and the table unit according to an embodiment of the present invention; FIG. 2 is a side view showing each device of FIG. FIG. 3 is a perspective view showing the structure used in the substrate transfer device of FIG. 1. FIG. 4 is a perspective view showing the use of the substrate position detecting unit in the embodiment. The structure in the substrate detecting mechanism; FIG. 5A shows the relationship between the state in each measurement field and the position of the wafer W, which can be judged to be in a white state in the measurement fields (bright State) is observed, and Figure 5B shows the relationship between the support pin and the wafer, which can be observed after the misalignment shown in Figure 5A is corrected; Figure 6A shows in each measurement field The relationship between the state and the position of the wafer W, which can be observed when one of the measurement fields is determined to be in a gray state and the other measurement fields are in a white state (bright state) And, Figure 6B shows the relationship between the support pin and the wafer, which can be seen in the error shown in Figure 6A. It is observed after quasi-correction; FIG. 7A shows the relationship between the state in each measurement field and the position of the wafer W, which can be judged to be in a gray state in one of the measurement fields. One of the measurement fields is determined to be in a black state (dark state) and the other measurement fields are observed in a white state (bright state), and FIG. 7B shows the support pins and wafers. The relationship between this can be observed after the misalignment shown in Fig. 7A is corrected; Fig. 8 is a flow chart of a specific example of wafer transfer processing that can be implemented in this embodiment; Fig. 9A -9E respectively show an example of the operation performed by the substrate transfer device; Fig. 10 is a perspective view showing an example of another structure which can be used in the substrate transfer device in this embodiment; Fig. 11 is a view The cross-sectional view shows an example of the structure of a substrate processing apparatus using the substrate transfer apparatus according to this embodiment; and FIG. 12 is a side view showing that it can be used in the substrate transfer apparatus equipped with this embodiment An example of the internal structure of a clean room.
130...基材轉送裝置130. . . Substrate transfer device
112...桌台112. . . Table
110...桌台單元110. . . Table unit
150...基材位置偵測單元150. . . Substrate position detecting unit
114...支撐軸114. . . Support shaft
132A...支撐銷132A. . . Support pin
132B...支撐銷132B. . . Support pin
132C...支撐銷132C. . . Support pin
134...基座134. . . Pedestal
138...支撐銷驅動機構138. . . Support pin drive mechanism
138X...X方向驅動機構138X. . . X-direction drive mechanism
138Y...Y方向驅動機構138Y. . . Y direction drive mechanism
138Z...Z方向驅動機構138Z. . . Z direction drive mechanism
113A...穿孔113A. . . perforation
113B...穿孔113B. . . perforation
113C...穿孔113C. . . perforation
156...安裝基座156. . . Mounting base
152A...影像捕捉機構152A. . . Image capture mechanism
152B...影像捕捉機構152B. . . Image capture mechanism
152C...影像捕捉機構152C. . . Image capture mechanism
154A...照明光源154A. . . Illumination source
157...托架157. . . bracket
158...托架158. . . bracket
W...晶圓W. . . Wafer
Claims (17)
Applications Claiming Priority (1)
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JP2006239983A JP4799325B2 (en) | 2006-09-05 | 2006-09-05 | Substrate delivery apparatus, substrate processing apparatus, and substrate delivery method |
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TW200822274A TW200822274A (en) | 2008-05-16 |
TWI390662B true TWI390662B (en) | 2013-03-21 |
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TW096133134A TWI390662B (en) | 2006-09-05 | 2007-09-05 | Substrate transfer device, substrate processing apparatus and substrate transfer method |
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JP (1) | JP4799325B2 (en) |
KR (1) | KR100941688B1 (en) |
CN (1) | CN101351878B (en) |
TW (1) | TWI390662B (en) |
WO (1) | WO2008029608A1 (en) |
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JP2002280287A (en) * | 2001-03-19 | 2002-09-27 | Nikon Corp | Method and device for detecting position, method and device for exposure, and method of manufacturing device |
JP2003051535A (en) | 2001-08-07 | 2003-02-21 | Canon Inc | Wafer holder, aligner and device production method |
JP4080401B2 (en) * | 2003-09-05 | 2008-04-23 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing method |
JP2006071395A (en) * | 2004-09-01 | 2006-03-16 | Nikon Corp | Calibration method and alignment method |
-
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CN101351878A (en) | 2009-01-21 |
WO2008029608A1 (en) | 2008-03-13 |
TW200822274A (en) | 2008-05-16 |
KR20080055792A (en) | 2008-06-19 |
JP2008066367A (en) | 2008-03-21 |
KR100941688B1 (en) | 2010-02-12 |
CN101351878B (en) | 2010-06-09 |
JP4799325B2 (en) | 2011-10-26 |
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