JP2008066367A - Substrate delivery apparatus, substrate processing apparatus, and substrate delivery method - Google Patents

Substrate delivery apparatus, substrate processing apparatus, and substrate delivery method Download PDF

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JP2008066367A
JP2008066367A JP2006239983A JP2006239983A JP2008066367A JP 2008066367 A JP2008066367 A JP 2008066367A JP 2006239983 A JP2006239983 A JP 2006239983A JP 2006239983 A JP2006239983 A JP 2006239983A JP 2008066367 A JP2008066367 A JP 2008066367A
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substrate
wafer
mounting table
support pins
support
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JP4799325B2 (en
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Tsutomu Hiroki
勤 広木
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Tokyo Electron Ltd
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Priority to PCT/JP2007/066087 priority patent/WO2008029608A1/en
Priority to KR1020087003549A priority patent/KR100941688B1/en
Priority to CN2007800010976A priority patent/CN101351878B/en
Priority to TW096133134A priority patent/TWI390662B/en
Priority to US11/850,350 priority patent/US8057153B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
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    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract

<P>PROBLEM TO BE SOLVED: To correct displacement in the horizontal direction of a substrate only by a substrate delivery apparatus without the use of a transfer arm. <P>SOLUTION: The substrate delivery apparatus is provided with a plurality of supporting pins 132A to 132C separately arranged around a supporting axis 114 of a substrate setting tray 112 to support the substrate, for example, a wafer W at its lower surface, a base tray 134 to which the supporting pins are mounted, a vertical driving means (Z-direction driving means 138Z) for moving upward and downward the wafer W by vertically driving the supporting pins via the base tray, and a horizontal driving means (X-direction driving mean 138X, Y-direction driving means 138Y) for adjusting the horizontal (X, Y directions) location of the wafer by horizontally driving the supporting pins via the base tray. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は，基板受け渡し装置，基板処理装置，基板受け渡し方法に関する。   The present invention relates to a substrate transfer apparatus, a substrate processing apparatus, and a substrate transfer method.

一般に，半導体集積回路の製造工程においては，被処理基板例えば半導体ウエハ（以下，単に「ウエハ」とも称する）に成膜処理，エッチング処理，熱処理などの各種のプロセス処理を繰り返し行うことによってウエハ上に集積回路を形成していく。また，上記各プロセス処理が施されたウエハには，所定の後処理が行われる場合もある。後処理としては，例えばウエハの洗浄のための処理（例えばウエハに付着した付着物の除去処理など），プロセス処理の結果を測定する処理（例えば膜厚測定処理，パーティクル測定処理など）が挙げられる。   In general, in the manufacturing process of a semiconductor integrated circuit, a substrate to be processed, such as a semiconductor wafer (hereinafter also simply referred to as “wafer”), is repeatedly formed on the wafer by various process processes such as film formation, etching, and heat treatment. An integrated circuit is formed. In addition, a predetermined post-process may be performed on the wafer subjected to each process. Examples of the post-processing include processing for cleaning the wafer (for example, removal processing of deposits attached to the wafer) and processing for measuring the result of the process processing (for example, film thickness measurement processing, particle measurement processing, etc.). .

このようなウエハの処理は，例えばプラズマ処理，測定処理など所定の処理を実行可能に構成された処理室を備える基板処理装置によって行われる。基板処理装置は，例えばウエハを搬送する搬送アームを旋回，進退自在に設けた搬送ロボットを備え，この搬送アームによってウエハが処理室に搬送される。一般に，処理室内にはウエハを載置する載置台が設けられ，この載置台と上記搬送アームとの間でウエハの受け渡しが行われる。   Such wafer processing is performed by a substrate processing apparatus including a processing chamber configured to execute predetermined processing such as plasma processing and measurement processing. The substrate processing apparatus includes, for example, a transfer robot provided so that a transfer arm for transferring a wafer can be swung and moved back and forth, and the transfer arm transfers the wafer to the processing chamber. Generally, a mounting table for mounting a wafer is provided in the processing chamber, and the wafer is transferred between the mounting table and the transfer arm.

上記のようなウエハの受け渡しは，従来から載置台を貫通する複数の支持ピンを上下動させることによって，搬送アーム上のウエハを支持ピンで受け取って，載置台に載置させるものが知られている（例えば特許文献１参照）。また，搬送ロボットと載置台との間に回転腕を設け，この回転腕によって搬送ロボットのピンセット上のウエハを載置台へ移載するものもある（特許文献２参照）。   Conventionally, the above-described wafer delivery is known in which a plurality of support pins penetrating the mounting table are moved up and down to receive the wafer on the transfer arm with the support pins and place it on the mounting table. (For example, refer to Patent Document 1). Also, there is a type in which a rotating arm is provided between the transfer robot and the mounting table, and the wafer on the tweezers of the transfer robot is transferred to the mounting table by this rotating arm (see Patent Document 2).

特開平６−９７２６９号公報JP-A-6-97269 特開平５−３４３５００号公報JP-A-5-343500 特開平８−８３２８号公報JP-A-8-8328 特開２００２−２８０２８７号公報JP 2002-280287 A

ところで，載置台上のウエハに対して適切な処理を施すためには，ウエハを水平方向の位置ずれがないように正確に載置台上に載置する必要がある。このため，従来はウエハに水平方向の位置ずれがあると，載置台上のウエハを搬送アームで取り出して，搬送アームや搬送ロボットで位置ずれを補正してから，もう一度載置台にウエハを置き直すようにしていた。   Incidentally, in order to perform an appropriate process on the wafer on the mounting table, it is necessary to accurately place the wafer on the mounting table so that there is no horizontal displacement. For this reason, conventionally, if the wafer has a horizontal misalignment, the wafer on the mounting table is taken out by the transfer arm, the misalignment is corrected by the transfer arm or the transfer robot, and then the wafer is placed on the mounting table again. It was like that.

具体的には例えば特許文献１に示すような支持ピンを上下させてウエハの受け渡しを行うものにおいては，ウエハに位置ずれがあると，載置台上のウエハを支持ピンで持ち上げて，搬送アームを差し入れてウエハを受け取って取り出す。そして，搬送アームを動かしてウエハの位置を調整した上で，再び載置台にウエハを置き直すようにしていた。   Specifically, for example, in the case where the wafer is transferred by moving the support pins up and down as shown in Patent Document 1, if the wafer is misaligned, the wafer on the mounting table is lifted by the support pins and the transfer arm is moved. Insert and take out the wafer. Then, after moving the transfer arm to adjust the position of the wafer, the wafer is again placed on the mounting table.

また，特許文献２に示すような搬送ロボット自体にウエハの位置合わせ装置を設けたものにおいては，搬送ロボットのピンセット上でウエハの位置を補正した上で，回転腕によってウエハを載置台に移載する（特許文献２の図２，図３参照）。   In addition, in the case where a wafer positioning device is provided on the transfer robot itself as shown in Patent Document 2, the wafer position is corrected on the tweezers of the transfer robot and the wafer is transferred to the mounting table by the rotating arm. (See FIGS. 2 and 3 of Patent Document 2).

しかしながら，上記のように搬送アームや搬送ロボットにて位置ずれを補正するものにおいては，その補正動作のために搬送アームや搬送ロボットは他の作業（例えば他のウエハの搬送作業）を行うことができなくなる。このため，ウエハ処理のスループットが低下するという問題があった。   However, in the case where the positional deviation is corrected by the transfer arm or the transfer robot as described above, the transfer arm or the transfer robot may perform another operation (for example, transfer operation of another wafer) for the correction operation. become unable. For this reason, there has been a problem that throughput of wafer processing is lowered.

この点，搬送アームを用いずに，載置台をＸＹ方向に移動させることによってウエハの水平方向の位置ずれを補正するものも知られている。例えば特許文献３には，ウエハを載置台に載置したまま回転させて，ＣＣＤリニアセンサでウエハ外縁全周を検出することによってウエハの位置ずれを検出し，その位置ずれを載置台をＸＹ方向に移動させることによって補正するものが記載されている。   In this regard, there is also known a technique that corrects the positional deviation of the wafer in the horizontal direction by moving the mounting table in the XY directions without using the transfer arm. For example, in Patent Document 3, the wafer is rotated while the wafer is mounted on the mounting table, and the wafer linear deviation is detected by detecting the entire outer periphery of the wafer with a CCD linear sensor. What is corrected by moving to the position is described.

また，例えば特許文献４には，処理室内に吊下げられた回転支持体（搬入アーム）でウエハを支持したまま，複数のＣＣＤカメラでウエハの外縁を撮影し，その撮影結果に基づいてウエハの位置を検出し，その位置ずれを載置台をＸＹ方向に移動させることによって補正するものが記載されている。   Further, for example, in Patent Document 4, the outer edge of a wafer is photographed by a plurality of CCD cameras while the wafer is supported by a rotating support (loading arm) suspended in the processing chamber, and the wafer is struck based on the photographing result. There is described a device that detects a position and corrects the displacement by moving the mounting table in the XY directions.

ところが，特許文献３に記載のものでは，ウエハの位置ずれを検出するために，ウエハリフトでウエハを載置台に下ろさなければならず，さらにウエハに位置ずれがあった場合にはそれを補正するために，ウエハリフトでウエハを持ち上げてから載置台をＸＹ方向に移動した上で再びウエハを載置台に下ろさなければならない。このように，何度もウエハを上げ下ろししなければならないので，位置ずれ補正に時間がかかり，その分ウエハ処理のスループットが低下してしまう。   However, in the device described in Patent Document 3, in order to detect the positional deviation of the wafer, the wafer must be lowered to the mounting table by the wafer lift, and if there is a positional deviation of the wafer, it is corrected. In addition, after the wafer is lifted by the wafer lift, the mounting table must be moved in the XY directions, and then the wafer must be lowered to the mounting table again. In this way, since the wafer must be raised and lowered many times, it takes time to correct misalignment, and the throughput of wafer processing is reduced accordingly.

また，特許文献４に記載のものでは，例えばＣＣＤカメラでウエハの外縁を検出できないほどウエハの位置ずれが大きい場合には，ウエハの位置ずれを検出できず，その位置ずれを載置台のＸＹ駆動によって補正することができない。また，ウエハを支持する回転支持体（搬入アーム）自体はＸＹ方向に移動しないので，回転支持体（搬入アーム）でＸＹ方向の補正をすることもできない。   Further, in the case of the one described in Patent Document 4, for example, when the wafer position deviation is so large that the outer edge of the wafer cannot be detected by the CCD camera, the wafer position deviation cannot be detected, and the position deviation is detected by XY driving of the mounting table. Can not be corrected by. Further, since the rotary support (loading arm) itself that supports the wafer does not move in the XY directions, correction in the XY direction cannot be performed by the rotary support (loading arm).

従って，このような場合には，搬送ロボットや搬送アームでウエハを取り出し，回転支持体（搬入アーム）に載せ直さなければならない。その間，上記のように搬送アームや搬送ロボットは他の作業（例えば他のウエハの搬送作業）を行うことができなくなるので，ウエハ処理のスループットが低下してしまう。   Therefore, in such a case, the wafer must be taken out by the transfer robot or transfer arm and placed on the rotation support (loading arm). Meanwhile, as described above, the transfer arm and the transfer robot cannot perform other operations (for example, transfer operations of other wafers), so that the throughput of wafer processing is reduced.

そこで，本発明はこのような問題に鑑みてなされたもので，その目的は，搬送アームから基板を支持ピンで受け取った後は，搬送アームや搬送ロボットを使わずに，支持ピンで基板を水平方向に駆動させることにより，基板の位置ずれを素早く補正することができ，結果としてウエハ処理のスループットを向上させることができる基板受け渡し装置などを提供することにある。   Therefore, the present invention has been made in view of such problems, and the purpose of the present invention is to use the support pins to horizontally level the substrate without using the transfer arm or the transfer robot after receiving the substrate from the transfer arm with the support pins. It is an object of the present invention to provide a substrate transfer device and the like that can quickly correct the positional deviation of the substrate by driving in the direction, and as a result can improve the throughput of wafer processing.

上記課題を解決するために，本発明のある観点によれば，基板を搬送する搬送アームと前記基板を載置する載置台との間で基板の受け渡しを行う基板受け渡し装置であって，前記載置台の支持軸周りに離間して配設され，前記基板をその下面で支持する複数の支持ピンと，前記支持ピンが取り付けられる基台と，前記支持ピンを前記基台を介して上下駆動させて，前記基板の上げ下ろしを行う上下駆動手段と，前記支持ピンを前記基台を介して水平駆動させて，前記基板の水平方向の位置を調整する水平駆動手段とを備えることを特徴とする基板受け渡し装置が提供される。   In order to solve the above-described problems, according to an aspect of the present invention, there is provided a substrate transfer apparatus that transfers a substrate between a transfer arm that transfers a substrate and a mounting table on which the substrate is mounted. A plurality of support pins which are arranged around a support shaft of the mounting table and support the substrate on the lower surface thereof, a base to which the support pins are attached, and the support pins are driven up and down via the base. And a substrate driving mechanism comprising: vertical driving means for raising and lowering the substrate; and horizontal driving means for adjusting the horizontal position of the substrate by horizontally driving the support pin through the base. An apparatus is provided.

このような発明によれば，支持ピンを水平方向（ＸＹ方向）に移動可能に構成したことにより，例えば搬送アームから基板を支持ピンで受け取った後は，搬送アームを使わずに，支持ピンで基板を支持したまま水平方向に駆動させることができる。これにより，基板の位置ずれを素早く補正することができる。また，搬送アームは支持ピンに基板を渡した後はすぐに他の作業を行うことができる。したがって，基板処理のスループットを向上させることができる。   According to such an invention, the support pin is configured to be movable in the horizontal direction (XY direction). For example, after receiving the substrate from the transfer arm with the support pin, the support pin is used without using the transfer arm. The substrate can be driven in the horizontal direction while being supported. Thereby, the position shift of the substrate can be corrected quickly. In addition, the transfer arm can perform other operations immediately after passing the substrate to the support pins. Therefore, the throughput of substrate processing can be improved.

また，上記載置台の近傍に，支持ピンで支持した前記基板の水平方向の位置を検出する基板位置検出手段を配設することが好ましい。これにより，支持ピンで基板を支持したまま，基板の水平方向の位置を検出して，位置ずれしているか否かを検出することができる。さらに，本発明によれば，載置台を水平方向に駆動させるのではなく，支持ピンを水平方向に駆動させるようにしたので，例えば基板の位置ずれが大きくて基板位置検出手段で検出できない場合でも，支持ピンで基板を持ち上げたまま，基板位置検出手段で検出できる位置まで支持ピンで基板を水平方向に移動させることができる。これにより，基板が大きく位置ずれしている場合でも，基板の位置を検出して位置ずれを素早く補正することができる。   Further, it is preferable that a substrate position detecting means for detecting a horizontal position of the substrate supported by the support pins is disposed in the vicinity of the mounting table. As a result, it is possible to detect whether the substrate is displaced by detecting the horizontal position of the substrate while supporting the substrate with the support pins. Further, according to the present invention, since the mounting table is not driven in the horizontal direction, but the support pins are driven in the horizontal direction, for example, even when the substrate position detection means cannot detect the substrate position detection means. The substrate can be moved in the horizontal direction with the support pins to a position that can be detected by the substrate position detecting means while the substrate is lifted with the support pins. Thereby, even when the substrate is largely displaced, the position of the substrate can be detected and the displacement can be corrected quickly.

なお，上記基板位置検出手段は，例えば前記基板の周縁部の少なくとも２箇所以上の位置を検出できるように構成することが好ましい。基板の周縁部の少なくとも２箇所の位置を検出できれば，例えば半導体ウエハのような円板状の基板であればその基板の中心位置を検出することができる。   The substrate position detecting means is preferably configured to detect at least two positions on the peripheral edge of the substrate, for example. If at least two positions on the peripheral edge of the substrate can be detected, the center position of the substrate can be detected in the case of a disk-shaped substrate such as a semiconductor wafer.

また，基板の受け渡し処理を行う制御部を設け，例えば上下駆動手段により前記支持ピンを上昇させて前記搬送アームから前記基板を受け取ると，前記支持ピンで前記基板を支持した状態で，前記基板位置検出手段により前記基板の水平方向の位置を検出して，前記基板が位置ずれしていれば前記水平駆動手段により前記支持ピンを水平方向に駆動させて前記基板の位置ずれを補正した上で，前記上下駆動手段により前記支持ピンを下降させて前記基板を前記載置台上に載置させる受け渡し処理を実行させるようにしてもよい。   In addition, a control unit that performs substrate transfer processing is provided. For example, when the substrate is received from the transfer arm by raising the support pin by vertical drive means, the substrate position is supported while the substrate is supported by the support pin. The position of the substrate in the horizontal direction is detected by the detecting means, and if the substrate is displaced, the support pins are driven in the horizontal direction by the horizontal driving means to correct the displacement of the substrate, You may make it perform the delivery process which lowers the said support pin by the said up-and-down drive means, and mounts the said board | substrate on the mounting base mentioned above.

これによれば，支持ピンで前記基板を支持したままで，基板位置を検出して位置ずれ補正を素早く行うことができる。このため，従来のように例えば基板位置の検出や基板の位置ずれ補正のために搬送アームや支持ピンで載置台に基板を置き直す場合に比して，より高速で位置ずれ補正を行うことができる。これにより，基板処理のスループットを向上させることができる。   According to this, it is possible to quickly correct the misalignment by detecting the position of the substrate while the substrate is supported by the support pins. For this reason, it is possible to perform the positional deviation correction at a higher speed than in the conventional case, for example, when the substrate is repositioned on the mounting table by the transfer arm or the support pin for the detection of the substrate position or the positional deviation correction of the substrate. it can. Thereby, the throughput of substrate processing can be improved.

また，上記搬送アームから前記基板を受け取る際，前記支持ピンを上昇させた状態で，前記搬送アームを下降させて前記基板を受け取るようにしてもよい。これによれば，支持ピンを上昇させたまま基板を受け取ることができる。   Further, when the substrate is received from the transfer arm, the transfer arm may be lowered to receive the substrate with the support pins raised. According to this, the substrate can be received with the support pins raised.

また，上記複数の支持ピンを，例えば前記載置台の支持軸周りに前記載置台の径よりも内側に離間して配設し，前記載置台に形成された貫通孔を通して前記載置台の基板載置面から前記各支持ピンの先端が突没可能に構成する。このような構成によれば，基板の中心寄りのポイントを各支持ピンで支持することができるので，例えば載置台上の基板の端部に処理（例えば基板端部に付着した付着物の除去処理）を施す場合に，その処理の対象となる部位からできるだけ離れたポイントで基板を支持することができる。   In addition, the plurality of support pins are arranged, for example, around the support shaft of the mounting table and spaced apart from the diameter of the mounting table, and through the through holes formed in the mounting table, the substrate mounting of the mounting table is placed. The tip of each support pin is configured to be able to project and retract from the mounting surface. According to such a configuration, since the point near the center of the substrate can be supported by each support pin, for example, processing is performed on the end of the substrate on the mounting table (for example, removal processing of adhered matter adhering to the end of the substrate). ), The substrate can be supported at a point as far as possible from the site to be processed.

また，上記載置台を支持軸周りに回転自在に構成した場合には，例えば前記載置台を回転させるときには，前記支持ピンの先端が前記載置台の底面よりも下側になるように前記支持ピンを下降させる。これにより，載置台を回転するときに貫通孔と支持ピンとが衝突しないようにすることができる。   Further, when the mounting table is configured to be rotatable around the support shaft, for example, when the mounting table is rotated, the support pin is arranged such that the tip of the support pin is below the bottom surface of the mounting table. Is lowered. Thereby, it is possible to prevent the through hole and the support pin from colliding when the mounting table is rotated.

また，上記基板受け渡し装置において，前記複数の支持ピンを前記載置台の支持軸周りに前記載置台の径よりも外側に離間して配設するようにしてもよい。この構成によれば，載置台に貫通孔を形成することなく基板を支持ピンで支持することができる。また，支持ピンの水平方向への移動量が貫通孔に制限されないため，より大きく基板を水平移動させることができる。従って，一度に基板を水平方向に移動させる移動量を大きくとることができる。   In the substrate transfer apparatus, the plurality of support pins may be arranged around the support shaft of the mounting table and spaced outside the diameter of the mounting table. According to this configuration, the substrate can be supported by the support pins without forming a through hole in the mounting table. In addition, since the amount of movement of the support pins in the horizontal direction is not limited by the through holes, the substrate can be moved more horizontally. Therefore, it is possible to increase the amount of movement for moving the substrate in the horizontal direction at a time.

上記課題を解決するために，本発明の別の観点によれば，処理室内に配設された載置台上に基板を載置して所定の処理を行う基板処理装置であって，前記処理室内に前記基板を搬出入する搬送アームと前記載置台との間で基板の受け渡しを行う基板受け渡し装置を前記載置台近傍に配置し，前記基板受け渡し装置は，前記載置台の支持軸周りに離間して配設され，前記基板をその下面で支持する複数の支持ピンと，前記支持ピンが取り付けられる基台と，前記支持ピンを前記基台を介して上下駆動させて，前記基板の上げ下ろしを行う上下駆動手段と，前記支持ピンを前記基台を介して水平駆動させて，前記基板の水平方向の位置を調整する水平駆動手段とを備えることを特徴とする基板処理装置が提供される。   In order to solve the above problems, according to another aspect of the present invention, there is provided a substrate processing apparatus for performing a predetermined process by placing a substrate on a mounting table disposed in a processing chamber, A substrate transfer device for transferring the substrate between the transfer arm for loading and unloading the substrate and the mounting table is disposed in the vicinity of the mounting table, and the substrate transfer device is spaced around the support shaft of the mounting table. A plurality of support pins that support the substrate on the lower surface thereof, a base to which the support pins are attached, and an up-and-down direction that drives the support pins up and down through the base to raise and lower the substrate There is provided a substrate processing apparatus comprising drive means and horizontal drive means for adjusting the position of the substrate in the horizontal direction by horizontally driving the support pins through the base.

このような発明によれば，搬送アームを使わずに，支持ピンで基板を水平方向に移動させて位置ずれを素早く補正することができる。このため，搬送アームは，基板受け渡し装置に基板を渡した後はすぐに他の作業を行うことができる。したがって，基板処理のスループットを向上させることができる。また，基板を位置ずれなく載置台に載置することができるため，基板に対して安定的に所定の処理を施すことができる。   According to such an invention, it is possible to quickly correct the misalignment by moving the substrate in the horizontal direction with the support pins without using the transfer arm. For this reason, the transfer arm can perform other operations immediately after the substrate is transferred to the substrate transfer device. Therefore, the throughput of substrate processing can be improved. In addition, since the substrate can be placed on the placement table without displacement, a predetermined process can be stably performed on the substrate.

上記課題を解決するために，本発明の別の観点によれば，基板に所定の処理を施す複数の処理室を備え，前記基板を搬送アームで各処理室を順番に搬送しながら基板に連続して処理を行う基板処理装置であって，前記処理室の少なくとも１つは，他の処理室でプロセス処理を行った基板を搬送して後処理を行う後処理室とし，前記後処理室は，その内部に設けられた載置台と前記搬送アームとの間で基板の受け渡しを行う基板受け渡し装置を備え，前記基板受け渡し装置は，前記基板をその下面で支持する複数の支持ピンと，前記支持ピンが取り付けられる基台と，前記支持ピンを前記基台を介して上下駆動させて，前記基板の上げ下ろしを行う上下駆動手段と，前記支持ピンを前記基台を介して水平駆動させて，前記基板の水平方向の位置を調整する水平駆動手段とを備えることを特徴とする基板処理装置が提供される。   In order to solve the above-described problems, according to another aspect of the present invention, a plurality of processing chambers for performing a predetermined process on a substrate are provided, and the substrate is continuously transferred to the substrate while being sequentially transferred to each processing chamber by a transfer arm. A substrate processing apparatus that performs processing, wherein at least one of the processing chambers serves as a post-processing chamber for carrying out post-processing by transporting a substrate that has been processed in another processing chamber; , A substrate transfer device for transferring a substrate between a mounting table provided therein and the transfer arm, the substrate transfer device including a plurality of support pins for supporting the substrate on its lower surface, and the support pins A base on which the board is mounted, vertical driving means for driving the support pins up and down through the base, and raising and lowering the board, and horizontally driving the support pins through the base, and the board Horizontal position of A substrate processing apparatus, characterized in that it comprises a horizontal driving means for adjustment is provided.

このような後処理室に搬送される基板は，他の処理室を経由して搬送アームによる搬出入が繰り返されているため，大きく位置ずれしている蓋然性が高い。この点，本発明にかかる基板受け渡し装置によれば，基板の位置ずれが大きい場合であっても，従来のように基板を取り出して入れ直したり，また載置台に置き直したりすることなく，支持ピンで基板を支持したまま水平方向に駆動することによってその位置ずれを素早く正確に補正することができる。従って，このような後処理室に本発明にかかる基板受け渡し装置を適用する効果は大きい。   Such a substrate transferred to the post-processing chamber is likely to be greatly displaced because the transfer arm is repeatedly carried in and out through another processing chamber. In this respect, according to the substrate transfer device of the present invention, even if the substrate is largely misaligned, the support pins can be used without taking out and reinserting the substrate as in the prior art, and without repositioning it on the mounting table. By driving in the horizontal direction while supporting the substrate, the positional deviation can be corrected quickly and accurately. Therefore, the effect of applying the substrate transfer apparatus according to the present invention to such a post-processing chamber is great.

また，上記後処理室は，前記基板の周縁部に付着した付着物を除去する洗浄処理室であってもよい。またこの場合，前記基板受け渡し装置の複数の支持ピンを，前記載置台の支持軸周りに前記載置台の径よりも内側に離間して配設し，前記載置台に形成された貫通孔を通して前記載置台の基板載置面から前記支持ピンの先端が突没可能にすることが好ましい。これによれば，基板裏面において中心寄りのポイントを各支持ピンで支持することができる。このため，各支持ピンに妨げられることなく基板の周縁部に付着した付着物を除去することができる。   Further, the post-processing chamber may be a cleaning processing chamber for removing deposits attached to the peripheral edge of the substrate. Further, in this case, the plurality of support pins of the substrate transfer device are arranged around the support shaft of the mounting table so as to be spaced inward from the diameter of the mounting table, and are passed through the through holes formed in the mounting table. It is preferable that the tip of the support pin can protrude and retract from the substrate mounting surface of the mounting table. According to this, the point near the center on the back surface of the substrate can be supported by each support pin. For this reason, the deposit | attachment adhering to the peripheral part of a board | substrate can be removed without being obstructed by each support pin.

上記課題を解決するために，本発明の別の観点によれば，基板を搬送する搬送アームと前記基板を載置する載置台との間で基板の受け渡しを行う基板受け渡し装置による受け渡し方法であって，前記基板受け渡し装置は，前記載置台の支持軸周りに離間して配設され，前記基板をその下面で支持する複数の支持ピンと，前記支持ピンが取り付けられる基台と，前記支持ピンを前記基台を介して上下駆動させる上下駆動手段と，前記支持ピンを前記基台を介して水平駆動させる水平駆動手段と，前記基板の水平方向の位置を検出する基板位置検出手段とを備え，前記上下駆動手段により前記支持ピンを上昇させて，前記搬送アームから前記基板を受け取る工程と，受け取った前記基板の水平方向の位置を，前記支持ピンで前記基板を支持したままの状態で，前記基板位置検出手段により検出する工程と，
前記基板位置検出手段により検出された基板の位置に基づいて，その基板が所定の基準位置から位置ずれしているか否かを判断する工程と，前記判断工程において前記基板が位置ずれしていないと判断した場合は，前記上下駆動手段により前記支持ピンを下降させて前記載置台上に載置させる工程と，前記判断工程において前記基板が位置ずれしていると判断した場合は，前記支持ピンを前記水平駆動手段により水平方向に駆動させて前記基板の位置ずれを補正した上で，前記上下駆動手段により前記支持ピンを下降させて前記載置台上に載置させる工程とを有することを特徴とする基板受け渡し方法が提供される。 In order to solve the above-described problem, according to another aspect of the present invention, there is provided a delivery method by a substrate delivery apparatus that delivers a substrate between a transfer arm that transfers a substrate and a mounting table on which the substrate is placed. The substrate transfer device is disposed around the support shaft of the mounting table, and is provided with a plurality of support pins for supporting the substrate on its lower surface, a base on which the support pins are attached, and the support pins. Vertical driving means for driving up and down via the base, horizontal driving means for horizontally driving the support pins through the base, and substrate position detecting means for detecting the horizontal position of the substrate, The support pins are lifted by the vertical driving means to receive the substrate from the transfer arm, and the horizontal position of the received substrate is supported by the support pins. In the state, a step of detecting by the substrate position detection means,
Determining whether the substrate is displaced from a predetermined reference position based on the position of the substrate detected by the substrate position detecting means; and if the substrate is not displaced in the determining step If it is determined that the support pin is lowered by the vertical driving means and placed on the mounting table, and if it is determined that the substrate is displaced in the determination step, the support pin is A step of driving the horizontal drive means in the horizontal direction to correct the positional deviation of the substrate, and lowering the support pins by the vertical drive means to place on the mounting table. A substrate delivery method is provided.

このような発明によれば，搬送アームから基板を支持ピンで受け取った後は，基板に位置ずれがあったとしても，搬送アームを使わずに，支持ピンで基板を支持したまま水平方向に駆動させることにより，基板の位置ずれを素早く補正することができる。また，搬送アームは支持ピンに基板を渡した後はすぐに他の作業を行うことができる。したがって，基板処理のスループットを向上させることができる。   According to such an invention, after receiving the substrate from the transfer arm with the support pins, even if the substrate is misaligned, the substrate is driven in the horizontal direction without using the transfer arm and supporting the substrate with the support pins. By doing so, the positional deviation of the substrate can be corrected quickly. In addition, the transfer arm can perform other operations immediately after passing the substrate to the support pins. Therefore, the throughput of substrate processing can be improved.

また，上記搬送アームから前記基板を受け取る工程では，前記支持ピンを上昇させた状態で，前記搬送アームを下降させて前記基板を受け取るようにしてもよい。これによれば，支持ピンを上昇させたまま基板を受け取ることができる。   In the step of receiving the substrate from the transfer arm, the transfer arm may be lowered to receive the substrate with the support pins raised. According to this, the substrate can be received with the support pins raised.

また，上記基板の位置を検出する工程は，前記基板位置検出手段で基板を検出できない場合には，前記支持ピンを水平方向に駆動させることによって，前記基板を前記基板位置検出手段で検出できるまで移動させるようにしてもよい。これによれば，支持ピンで受け取ったときの基板の位置ずれが大きいために，基板位置検出手段で基板を検出できなくても，支持ピンでそのまま基板を移動させることができるので，基板位置検出手段で基板の位置を検出できるようにすることができる。これにより，基板を載置台に置き直すことなく，位置ずれを補正することができる。   Further, in the step of detecting the position of the substrate, when the substrate position cannot be detected by the substrate position detecting means, the support pins are driven in the horizontal direction until the substrate can be detected by the substrate position detecting means. You may make it move. According to this, since the positional deviation of the substrate when received by the support pin is large, even if the substrate cannot be detected by the substrate position detecting means, the substrate can be moved as it is by the support pin. The position of the substrate can be detected by the means. As a result, it is possible to correct the misalignment without replacing the substrate on the mounting table.

本発明によれば，搬送アームを使わずに，基板受け渡し装置で基板を水平方向に移動させて位置ずれを補正することができるため，搬送アームは基板受け渡し装置に基板を渡した後はすぐに他の作業（例えば他の基板の搬送作業）を行うことができる。しかも，基板を載置台に載置させる前に基板の位置ずれを補正することができるので，基板の位置ずれを素早く補正することができる。このため，基板処理のスループットを向上させることができる。   According to the present invention, the substrate can be moved in the horizontal direction by the substrate transfer device without using the transfer arm, and the positional deviation can be corrected. Therefore, the transfer arm immediately after passing the substrate to the substrate transfer device. Other operations (for example, other substrate transfer operations) can be performed. In addition, since the displacement of the substrate can be corrected before the substrate is placed on the mounting table, the displacement of the substrate can be corrected quickly. For this reason, the throughput of substrate processing can be improved.

以下に添付図面を参照しながら，本発明の好適な実施の形態について詳細に説明する。なお，本明細書および図面において，実質的に同一の機能構成を有する構成要素については，同一の符号を付することにより重複説明を省略する。   Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

（基板受け渡し装置）
まず，本発明の実施形態にかかる基板受け渡し装置について図面を参照しながら説明する。図１は各装置の設置例を説明するための斜視図であり，図２は図１に示す各装置の側面を示す図である。本実施形態では，図示しない搬送アームと載置台１１２との間で基板例えば半導体ウエハ（以下，単に「ウエハ」とも称する）Ｗを受け渡しする基板受け渡し装置１３０についての実施形態について説明する。 (Substrate delivery device)
First, the board | substrate delivery apparatus concerning embodiment of this invention is demonstrated, referring drawings. FIG. 1 is a perspective view for explaining an installation example of each device, and FIG. 2 is a view showing a side surface of each device shown in FIG. In this embodiment, an embodiment of a substrate transfer apparatus 130 that transfers a substrate, for example, a semiconductor wafer (hereinafter simply referred to as “wafer”) W between a transfer arm (not shown) and a mounting table 112 will be described.

図１，図２に示すように，ウエハＷを載置する載置台１１２を備える載置台ユニット１１０の近傍に，本実施形態にかかる基板受け渡し装置（リフタユニット）１３０が配設される。また，載置台ユニット１１０の近傍にはウエハＷの位置を検出する基板位置検出ユニット１５０が配設されている。   As shown in FIGS. 1 and 2, a substrate transfer device (lifter unit) 130 according to the present embodiment is disposed in the vicinity of a mounting table unit 110 including a mounting table 112 on which a wafer W is mounted. A substrate position detection unit 150 that detects the position of the wafer W is disposed in the vicinity of the mounting table unit 110.

載置台１１２は，例えば図１に示すようにウエハＷの径よりも小さい円板状に形成されている。ウエハＷは載置台１１２の上側の載置面に載置される。載置台１１２は，支持軸１１４によって例えば処理室内の底面にボルトなどの締結部材で取り付けられている。なお，載置台１１２は回転するように構成してもよい。載置台１１２を回転するように構成する場合には，例えば支持軸１１４の内部に例えばステッピングモータを設け，このステッピングモータの駆動によって載置台１１２を回転させる。また，載置台１１２には，その載置面上のウエハＷを例えばバキュームチャック機能によって吸着保持するようにしてもよい。これによって，載置台１１２が高速回転しても，載置台１１２からのウエハＷの脱落を防止できる。載置台ユニット１１０は，図２に示すように制御部２００に接続されており，この制御部２００からの制御信号に基づいて載置台１１２が回転制御されるようになっている。   The mounting table 112 is formed in a disk shape smaller than the diameter of the wafer W, for example, as shown in FIG. The wafer W is placed on the placement surface on the upper side of the placement table 112. The mounting table 112 is attached to the bottom surface of the processing chamber by a support shaft 114 with a fastening member such as a bolt. The mounting table 112 may be configured to rotate. When the mounting table 112 is configured to rotate, for example, a stepping motor is provided inside the support shaft 114, for example, and the mounting table 112 is rotated by driving the stepping motor. Further, the mounting table 112 may be configured to suck and hold the wafer W on the mounting surface by, for example, a vacuum chuck function. As a result, even if the mounting table 112 rotates at a high speed, the wafer W can be prevented from dropping off from the mounting table 112. As shown in FIG. 2, the mounting table unit 110 is connected to the control unit 200, and the mounting table 112 is controlled to rotate based on a control signal from the control unit 200.

ここで，基板受け渡し装置１３０の構成について図１，図３を参照しながら詳細に説明する。図３は，図１から基板受け渡し装置のみを取り出して図示したものである。なお，図３では基板受け渡し装置の構成を分りやすくするため，載置台１１２を省略して載置台１１２の支持軸１１４のみを２点鎖線で示している。   Here, the configuration of the substrate transfer device 130 will be described in detail with reference to FIGS. FIG. 3 shows only the substrate transfer device taken out from FIG. In FIG. 3, in order to facilitate understanding of the configuration of the substrate transfer apparatus, the mounting table 112 is omitted and only the support shaft 114 of the mounting table 112 is indicated by a two-dot chain line.

図３に示すように，基板受け渡し装置１３０は，図示しない搬送アームと載置台１１２との間でウエハＷの受け渡しする際に，ウエハＷを支持する複数（例えば３つ）の支持ピン（リフタピン）１３２Ａ〜１３２Ｃを備える。これらの支持ピン１３２Ａ〜１３２Ｃは図３に示すように載置台１１２の支持軸１１４周りに離間して配設される。支持ピン１３２Ａ〜１３２Ｃは例えばウエハＷを安定して支持できるように支持軸１１４周りに等間隔で配置することが好ましい。また，支持ピンの数は，３つに限られるものではないが，ウエハを安定して支持できるように少なくとも３つ以上であることが好ましい。   As shown in FIG. 3, the substrate transfer device 130 includes a plurality of (for example, three) support pins (lifter pins) that support the wafer W when the wafer W is transferred between a transfer arm (not shown) and the mounting table 112. 132A to 132C are provided. These support pins 132A-132C are spaced apart around the support shaft 114 of the mounting table 112 as shown in FIG. The support pins 132A to 132C are preferably arranged at equal intervals around the support shaft 114 so that the wafer W can be stably supported, for example. The number of support pins is not limited to three, but is preferably at least three so that the wafer can be stably supported.

支持ピン１３２Ａ〜１３２Ｃは，基台（リフタベース）１３４に立設され，この基台１３４を介してすべての支持ピン１３２Ａ〜１３２Ｃを一斉に上下方向又は水平方向に移動できるようになっている。基台１３４は，例えば図３に示すように略リング形状に形成された取付板１３５と，取付板１３５を支持する支持板１３６によって構成される。取付板１３５にはその上部にリング形状に沿って所定の間隔（例えば等間隔）で各支持ピン１３２Ａ〜１３２Ｃが取り付けられ，支持板１３６は後述する支持ピン駆動機構１３８のＸ方向駆動手段１３８Ｘを構成するステージに取り付けられている。   The support pins 132A to 132C are erected on a base (lifter base) 134, and all the support pins 132A to 132C can be moved simultaneously in the vertical direction or the horizontal direction via the base 134. The base 134 includes, for example, a mounting plate 135 formed in a substantially ring shape as shown in FIG. 3 and a support plate 136 that supports the mounting plate 135. Supporting pins 132A to 132C are attached to the mounting plate 135 at predetermined intervals along the ring shape (for example, at equal intervals), and the supporting plate 136 connects the X-direction driving means 138X of the supporting pin driving mechanism 138 described later. It is attached to the stage which comprises.

なお，取付板１３５のリング状の一部には，支持軸１１４の側面から取付板１３５を挿入できる程度の開口部が設けられている。これにより，支持軸１１４が処理室の底面に固定した後でも，取付板１３５をその開口部から支持軸１１４に挿入させて支持軸１１４周りに支持ピン１３２Ａ〜１３２Ｃが配置するように基板受け渡し装置１３０を設置することができる。   A part of the mounting plate 135 in the ring shape is provided with an opening that allows the mounting plate 135 to be inserted from the side surface of the support shaft 114. Thus, even after the support shaft 114 is fixed to the bottom surface of the processing chamber, the mounting plate 135 is inserted into the support shaft 114 through the opening, and the support pins 132A to 132C are arranged around the support shaft 114. 130 can be installed.

基台１３４は，支持ピン１３２Ａ〜１３２Ｃを上下方向のみならず，水平方向にも駆動可能な支持ピン駆動機構１３８に取り付けられている。具体的には例えば支持ピン駆動機構１３８は，基台１３４を介して支持ピン１３２Ａ〜１３２ＣをＸ方向に駆動させることができるＸ方向駆動手段１３８Ｘと，Ｙ方向に駆動させることができるＹ方向駆動手段１３８Ｙを備える。Ｘ方向駆動手段１３８Ｘは例えばＸ方向にリニア駆動可能なステージで構成し，Ｙ方向駆動手段１３８Ｙは例えばＸ方向とは垂直のＹ方向にＸ方向駆動手段をリニア駆動可能なステージで構成するようにしてもよい。なお，これらＸ方向駆動手段１３８Ｘ及びＹ方向駆動手段１３８Ｙは，水平方向（ＸＹ方向）駆動手段を構成する。   The base 134 is attached to a support pin drive mechanism 138 that can drive the support pins 132A to 132C not only in the vertical direction but also in the horizontal direction. Specifically, for example, the support pin drive mechanism 138 includes an X direction drive unit 138X that can drive the support pins 132A to 132C in the X direction via the base 134, and a Y direction drive that can be driven in the Y direction. Means 138Y are provided. The X direction driving means 138X is constituted by a stage that can be linearly driven in the X direction, for example, and the Y direction driving means 138Y is constituted by a stage that can linearly drive the X direction driving means in the Y direction perpendicular to the X direction, for example. May be. The X direction driving unit 138X and the Y direction driving unit 138Y constitute a horizontal direction (XY direction) driving unit.

また，支持ピン駆動機構１３８は，基台１３４を介して支持ピン１３２Ａ〜１３２ＣをＺ方向（上下方向）に駆動可能な上下方向駆動手段としてのＺ方向駆動手段１３８Ｚを備える。Ｚ方向駆動手段１３８ＺはＸ方向駆動手段１３８Ｘ及びＹ方向駆動手段１３８Ｙを例えばリニア駆動可能なステージで上下駆動させるように構成してもよい。   The support pin drive mechanism 138 includes Z-direction drive means 138Z as vertical drive means that can drive the support pins 132A to 132C in the Z direction (vertical direction) via the base 134. The Z-direction driving unit 138Z may be configured to drive the X-direction driving unit 138X and the Y-direction driving unit 138Y up and down on a stage that can be linearly driven, for example.

これら各駆動手段１３８Ｘ，１３８Ｙ，１３８Ｚのアクチュエータとしては，例えばリニアアクチュエータを用いることが好ましい。リニアアクチュエータを採用すれば，数μｍまたはそれ以下の繰り返し位置決め精度が得られ，かつ高速に各ステージを推進することができる。なお，リニアアクチュエータ以外にも，例えばボールネジとステッピングモータの組み合わせ機構によって各ステージを駆動するように構成してもよい。なお，基板受け渡し装置１３０は，図２に示すように制御部２００に接続されており，この制御部２００からの制御信号に基づいて各駆動手段１３８Ｘ，１３８Ｙ，１３８Ｚが駆動制御されるようになっている。   As the actuators of these driving means 138X, 138Y, 138Z, for example, linear actuators are preferably used. If a linear actuator is used, repeated positioning accuracy of several μm or less can be obtained, and each stage can be driven at high speed. In addition to the linear actuator, each stage may be driven by, for example, a combination mechanism of a ball screw and a stepping motor. The substrate transfer device 130 is connected to the control unit 200 as shown in FIG. 2, and the driving means 138X, 138Y, 138Z are driven and controlled based on the control signal from the control unit 200. ing.

このような支持ピン駆動機構１３８によれば，Ｚ方向駆動手段１３８Ｚで支持ピン１３２Ａ〜１３２Ｃを基台１３４を介して上下駆動させることにより，搬送アーム又は載置台１１２に対するウエハＷの上げ下ろしを行うことができる。また，Ｘ方向駆動手段１３８Ｘ及びＹ方向駆動手段１３８Ｙにより，支持ピン１３２Ａ〜１３２Ｃを基台１３４を介して水平方向（ＸＹ方向）に駆動させて，支持ピン１３２Ａ〜１３２Ｃの上にウエハＷを載せたまま，水平方向の位置を調整することができる。   According to such a support pin drive mechanism 138, the support pins 132 </ b> A to 132 </ b> C are driven up and down through the base 134 by the Z direction drive means 138 </ b> Z, thereby raising and lowering the wafer W with respect to the transfer arm or the mounting table 112. Can do. Further, the support pins 132A to 132C are driven in the horizontal direction (XY direction) via the base 134 by the X direction drive means 138X and the Y direction drive means 138Y, and the wafer W is placed on the support pins 132A to 132C. The position in the horizontal direction can be adjusted.

これにより，搬送アームからウエハＷを支持ピン１３２Ａ〜１３２Ｃで受け取った後は，搬送アームや搬送ロボットを使わずに，支持ピン１３２Ａ〜１３２Ｃの上にウエハＷを載せたまま水平方向に動かすだけでウエハの位置ずれを補正することができ，結果としてウエハ処理のスループットを向上させることができる。   Thus, after the wafer W is received from the transfer arm by the support pins 132A to 132C, the wafer W is simply moved in the horizontal direction while being placed on the support pins 132A to 132C without using the transfer arm or the transfer robot. Wafer position deviation can be corrected, and as a result, wafer processing throughput can be improved.

ところで，図１に示すような比較的大きな径の載置台１１２でウエハの受け渡しを行う場合には，各支持ピン１３２Ａ〜１３２Ｃを載置台１１２の径よりも内側に配設する。そして，載置台１１２に形成された貫通孔を通して載置台１１２の載置面から各支持ピン１３２Ａ〜１３２Ｃの先端が突没するように構成する。例えば図１に示すように載置台１１２に支持ピン１３２Ａ〜１３２Ｃをそれぞれ通す貫通孔１１３Ａ〜１１３Ｃを形成する。   By the way, when the wafer is transferred by the mounting table 112 having a relatively large diameter as shown in FIG. 1, the support pins 132 </ b> A to 132 </ b> C are disposed inside the mounting table 112. And it comprises so that the front-end | tip of each support pin 132A-132C may protrude and project from the mounting surface of the mounting base 112 through the through-hole formed in the mounting base 112. FIG. For example, as shown in FIG. 1, through holes 113A to 113C through which the support pins 132A to 132C are respectively passed are formed in the mounting table 112.

これによれば，Ｚ方向駆動手段１３８Ｚにより支持ピン１３２Ａ〜１３２Ｃを上下駆動することによって，各支持ピン１３２Ａ〜１３２Ｃの先端が貫通孔１１３Ａ〜１１３Ｃを突没可能に昇降させることができる。またＸ方向駆動手段１３８Ｘ及びＹ方向駆動手段１３８Ｙにより支持ピン１３２Ａ〜１３２Ｃを水平駆動（ＸＹ駆動）することによって，各支持ピン１３２Ａ〜１３２Ｃの先端が各貫通孔１１３Ａ〜１１３Ｃ内を通して載置台１１２の載置面から突き出したまま，各貫通孔１１３Ａ〜１１３Ｃ内を水平移動（ＸＹ移動）させることができる。   According to this, by driving the support pins 132A to 132C up and down by the Z direction driving means 138Z, the tips of the support pins 132A to 132C can be lifted and lowered so that the through holes 113A to 113C can protrude and retract. Further, the support pins 132A to 132C are horizontally driven (XY drive) by the X direction drive means 138X and the Y direction drive means 138Y, so that the tips of the support pins 132A to 132C pass through the through holes 113A to 113C. While projecting from the placement surface, the through holes 113A to 113C can be moved horizontally (XY movement).

このような構成によればウエハの中心寄りのポイントを各支持ピン１３２Ａ〜１３２Ｃで支持することができるので，例えば載置台１１２上のウエハの端部に処理（例えば後述する洗浄処理）を施す場合に，その処理の対象となる部位からできるだけ離れたポイントでウエハを支持することができる。   According to such a configuration, the point near the center of the wafer can be supported by the support pins 132A to 132C, so that, for example, processing (for example, cleaning processing described later) is performed on the edge of the wafer on the mounting table 112. In addition, the wafer can be supported at a point as far as possible from the part to be processed.

なお，このような各貫通孔１１３Ａ〜１１３Ｃの開口径は，例えば支持ピン１３２Ａ〜１３２Ｃの径と水平方向への移動量（例えば水平方向の位置決め可能範囲）に応じて設定することが好ましい。各貫通孔１１３Ａ〜１１３Ｃは，例えば直径１０〜２０ｍｍで形成される。   The opening diameters of the through holes 113A to 113C are preferably set in accordance with, for example, the diameters of the support pins 132A to 132C and the amount of movement in the horizontal direction (for example, a horizontal positionable range). Each through-hole 113A-113C is formed with a diameter of 10-20 mm, for example.

また，載置台１１２が回転可能に構成される場合，載置台１１２を回転させるときには，支持ピン１３２Ａ〜１３２Ｃの先端が載置台１１２の底面よりも下側になるように支持ピン１３２Ａ〜１３２Ｃを下降することにより，載置台１１２を回転するときに貫通孔１１３Ａ〜１１３Ｃと支持ピン１３２Ａ〜１３２Ｃとが衝突しないようにすることができる。   When the mounting table 112 is configured to be rotatable, when the mounting table 112 is rotated, the support pins 132A to 132C are lowered so that the tips of the support pins 132A to 132C are below the bottom surface of the mounting table 112. By doing so, it is possible to prevent the through holes 113A to 113C and the support pins 132A to 132C from colliding when the mounting table 112 is rotated.

また，本実施形態では，載置台の各貫通孔に支持ピンを１つずつ挿入するようにした場合について説明したが，必ずしもこれに限定されるものではなく，支持ピンの数を多くする場合には，載置台の複数の貫通孔に複数の支持ピンをそれぞれ挿入するようにしてもよい。   In the present embodiment, the case where one support pin is inserted into each through hole of the mounting table has been described. However, the present invention is not necessarily limited to this, and the number of support pins is increased. The plurality of support pins may be inserted into the plurality of through holes of the mounting table, respectively.

（基板位置検出手段）
ここで，基板位置検出手段を備える基板位置検出ユニットについて図１，図４を参照しながら説明する。図４は基板位置検出手段の構成を説明するための斜視図である。図４では，基板位置検出手段の構成を説明し易くするために，図１に示す取付台１５６や載置台１１２を省略している。 (Substrate position detection means)
Here, a substrate position detection unit including substrate position detection means will be described with reference to FIGS. FIG. 4 is a perspective view for explaining the configuration of the substrate position detecting means. In FIG. 4, the mounting table 156 and the mounting table 112 shown in FIG. 1 are omitted in order to facilitate the explanation of the configuration of the substrate position detecting means.

基板位置検出ユニット１５０は，ウエハＷの水平方向の位置を検出するための基板位置検出手段を備える。基板位置検出手段は，例えば図４に示すようにウエハＷの周縁部を検出する複数（ここでは３つ）の撮像手段１５２Ａ〜１５２Ｃと，これら撮像手段１５２Ａ〜１５２Ｃにそれぞれ対向して配置される照明用光源１５４Ａ〜１５４Ｃにより構成される。   The substrate position detection unit 150 includes substrate position detection means for detecting the horizontal position of the wafer W. For example, as shown in FIG. 4, the substrate position detection means is arranged to face a plurality of (here, three) imaging means 152 </ b> A to 152 </ b> C that detect the peripheral portion of the wafer W, and these imaging means 152 </ b> A to 152 </ b> C, respectively. The illumination light sources 154A to 154C are configured.

撮像手段１５２Ａ〜１５２Ｃとしては，例えばＣＣＤ（Ｃｈａｒｇｅ Ｃｏｕｐｌｅｄ Ｄｅｖｉｃｅ）イメージセンサ，焦点調整用のレンズなどを設けたＣＣＤカメラにより構成される。また，照明用光源１５４Ａ〜１５４Ｃとしては，例えばＬＥＤユニットにより構成される。なお，照明用光源１５４Ａ〜１５４Ｃは，光の放出面に拡散板を備えており，これによって光の放出面全体にわたり光の強度を均一化できるようになっている。   The imaging units 152A to 152C are constituted by, for example, a CCD (Charge Coupled Device) image sensor, a CCD camera provided with a lens for focus adjustment and the like. Further, the illumination light sources 154A to 154C are constituted by, for example, LED units. Note that the illumination light sources 154A to 154C include a diffusion plate on the light emission surface, whereby the light intensity can be made uniform over the entire light emission surface.

基板位置検出手段を構成する撮像手段１５２Ａ〜１５２Ｃ及び照明用光源１５４Ａ〜１５４Ｃは例えば図１に示すような起立した取付台１５６に取り付けられる。取付台１５６には，その上部から水平に張り出したブラケット１５７と，このブラケット１５７の下方に水平に張り出したブラケット１５８を備える。上方のブラケット１５７には撮像手段１５２Ａ〜１５２Ｃが取り付けられ，下方のブラケット１５７には照明用光源１５４Ａ〜１５４Ｃが取り付けられる。こうして，撮像手段１５２Ａ〜１５２Ｃと照明用光源１５４Ａ〜１５４Ｃとは，ウエハＷの上下にウエハＷの周縁部を挟むように配設される。   The imaging means 152A to 152C and the illumination light sources 154A to 154C constituting the substrate position detection means are attached to an upright mounting base 156 as shown in FIG. The mounting base 156 includes a bracket 157 projecting horizontally from the upper portion thereof and a bracket 158 projecting horizontally below the bracket 157. Imaging means 152A to 152C are attached to the upper bracket 157, and illumination light sources 154A to 154C are attached to the lower bracket 157. Thus, the imaging means 152A to 152C and the illumination light sources 154A to 154C are arranged so that the peripheral edge of the wafer W is sandwiched between the upper and lower sides of the wafer W.

図４に示すように，各照明用光源１５４Ａ〜１５４Ｃの光軸はそれぞれ，各撮像手段１５２Ａ〜１５２Ｃの受光面に向かうように調整される。また，支持ピン１３２Ａ〜１３２Ｃを載置台１１２の載置面よりも上側に上昇させて，搬送アームからウエハＷを受取ったときのウエハＷの高さを受け取り高さとし，ウエハＷの中心と載置台の中心とが一致するときのウエハＷの位置（図４に示す２点鎖線で示すウエハの位置）を水平方向の基準位置Ｗｓｔとすれば，各撮像手段１５２Ａ〜１５２Ｃはそれぞれ，受け取り高さにある基準位置Ｗｓｔのウエハの周縁部に焦点が合うように調整される。さらに基準位置Ｗｓｔのウエハの周縁部を検出できる部位が各撮像手段１５２Ａ〜１５２Ｃの測定視野１５３Ａ〜１５３Ｃになるように調整される。   As shown in FIG. 4, the optical axes of the illumination light sources 154A to 154C are adjusted so as to face the light receiving surfaces of the imaging units 152A to 152C, respectively. Further, the support pins 132A to 132C are raised above the mounting surface of the mounting table 112, and the height of the wafer W when the wafer W is received from the transfer arm is defined as the receiving height. The center of the wafer W and the mounting table If the position of the wafer W (the position of the wafer indicated by the two-dot chain line in FIG. 4) when the center of the image coincides with the horizontal reference position Wst, each of the imaging means 152A to 152C Adjustment is made so that the periphery of the wafer at a certain reference position Wst is in focus. Further, adjustment is made so that the region where the peripheral portion of the wafer at the reference position Wst can be detected becomes the measurement visual fields 153A to 153C of the imaging units 152A to 152C.

具体的には，各撮像手段１５２Ａ〜１５２Ｃの測定視野１５３Ａ〜１５３Ｃは，例えば後述する図５Ａに示すように基準位置Ｗｓｔのウエハの周縁部に沿って等間隔に並ぶようになっている。例えば基準位置Ｗｓｔのウエハの中心から見た角度を考えると，ここでは測定視野１５３Ａから１５３Ｂまでの角度と測定視野１５３Ｂから１５３Ｃまでの角度をそれぞれ４５度（ｄｅｇ）とし，測定視野１５３Ａから１５３Ｃまでの角度を９０度（ｄｅｇ）となるようにしている。このような測定視野１５３Ａ〜１５３Ｃの角度は，上記のものに限られるものではなく，各撮像手段１５２Ａ〜１５２Ｃの取付位置を調整することによって自由に変えることができる。   Specifically, the measurement visual fields 153A to 153C of the imaging units 152A to 152C are arranged at regular intervals along the peripheral edge of the wafer at the reference position Wst, for example, as shown in FIG. 5A described later. For example, considering the angle viewed from the center of the wafer at the reference position Wst, here, the angles from the measurement visual fields 153A to 153B and the angles from the measurement visual fields 153B to 153C are 45 degrees (deg), respectively, and from the measurement visual fields 153A to 153C. Is set to 90 degrees (deg). The angles of the measurement visual fields 153A to 153C are not limited to those described above, and can be freely changed by adjusting the mounting positions of the imaging units 152A to 152C.

各撮像手段１５２Ａ〜１５２Ｃは，図２に示すように制御部２００に接続されており，各撮像手段１５２Ａ〜１５２Ｃで撮像された画像のデータは，基板受け渡し装置１３０などの各部を制御する制御部２００に送信される。制御部２００は，各撮像手段１５２Ａ〜１５２Ｃで撮像された測定視野１５３Ａ〜１５３Ｃの出力画像データに基づいてウエハＷの周縁部を検出するようになっている。   As shown in FIG. 2, the imaging units 152A to 152C are connected to the control unit 200, and the image data captured by the imaging units 152A to 152C is a control unit that controls each unit such as the board transfer device 130. 200. The control unit 200 detects the peripheral edge of the wafer W based on the output image data of the measurement visual fields 153A to 153C imaged by the imaging units 152A to 152C.

例えば測定視野１５３ＡにウエハＷの周縁部が入ると，測定視野１５３Ａのうち，ウエハＷが存在する領域は，照明用光源１５４Ａからの光が遮られて暗くなり，それ以外の部分は明るくなる。これにより，測定視野１５３ＡでウエハＷの周縁部の有無を検出することができる。従って，この状態を周縁部有り状態（グレー状態）として，後述する測定視野のすべてが明るい状態（白状態），測定視野のすべてが暗い状態（黒状態）と区別する。   For example, when the peripheral edge of the wafer W enters the measurement visual field 153A, the area of the measurement visual field 153A where the wafer W is present is darkened by the light from the illumination light source 154A being blocked, and the other portions are bright. Thereby, the presence / absence of the peripheral portion of the wafer W can be detected in the measurement visual field 153A. Therefore, this state is defined as a state having a peripheral edge (gray state), and is distinguished from a state in which all the measurement visual fields described later are bright (white state) and a state in which all the measurement visual fields are dark (black state).

また，上述の例で測定視野１５３Ａにおける明るい領域と暗い領域の境界がウエハＷの周縁部の形状（例えば本実施形態のような円板状のウエハの場合には円弧形状）になるので，測定視野１５３Ａの出力画像からウエハＷの周縁部の形状を検出することができる。   In the above example, the boundary between the bright area and the dark area in the measurement visual field 153A has the shape of the peripheral edge of the wafer W (for example, an arc shape in the case of a disk-shaped wafer as in the present embodiment). The shape of the peripheral portion of the wafer W can be detected from the output image of the visual field 153A.

こうして検出されたウエハＷの周縁部の形状に基づいて，制御部２００はウエハＷの中心位置を算出する。そして，載置台１１２の中心（載置台１１２が回転する場合は回転中心）からのウエハＷの水平方向の位置ずれ量および位置ずれ方向を求める。この位置ずれ量および位置ずれ方向に応じてＸ方向駆動手段１３８Ｘ及びＹ方向駆動手段１３８Ｙを駆動して支持ピン１３２Ａ〜１３２Ｃを水平方向に駆動させることによって，ウエハＷの水平方向の位置を調整することができる。   Based on the shape of the peripheral edge of the wafer W detected in this way, the control unit 200 calculates the center position of the wafer W. Then, the horizontal displacement amount and the displacement direction of the wafer W from the center of the mounting table 112 (the rotation center when the mounting table 112 rotates) are obtained. The X-direction driving unit 138X and the Y-direction driving unit 138Y are driven according to the positional shift amount and the positional shift direction to drive the support pins 132A to 132C in the horizontal direction, thereby adjusting the horizontal position of the wafer W. be able to.

なお，ウエハＷの水平方向の位置ずれは，上記の他，ウエハＷが上記の基準位置Ｗｓｔにあるときの測定視野１５３Ａ〜１５３Ｃの出力画像データを基準画像データとして予め記憶しておき，ウエハ位置を検出するために得られた測定視野１５３Ａ〜１５３Ｃの出力画像データを基準画像データと比較して判断するようにしてもよい。例えばウエハＷが基準位置Ｗｓｔからずれていて測定視野１５３Ａの出力画像データにおけるウエハＷの周縁部の位置がずれているとする。このとき，例えば測定視野１５３Ａの出力画像データの明るい領域と暗い領域の割合（明暗割合）は，ウエハＷが基準位置Ｗｓｔからずれている場合と，ウエハＷが基準位置Ｗｓｔにある場合とでは相違する。従って，対象となるウエハＷについての明暗割合を，基準位置Ｗｓｔにあるウエハについての明暗割合と比較することによってウエハＷの位置ずれを検出することができ，明暗割合に応じて位置ずれ量と位置ずれ方向を求めることができる。   In addition to the above, the positional deviation of the wafer W in the horizontal direction is stored in advance as output image data of the measurement visual fields 153A to 153C when the wafer W is at the reference position Wst. Determination may be made by comparing the output image data of the measurement visual fields 153A to 153C obtained in order to detect the reference image data. For example, it is assumed that the wafer W is displaced from the reference position Wst, and the position of the peripheral edge of the wafer W in the output image data of the measurement visual field 153A is displaced. At this time, for example, the ratio of the bright area to the dark area (brightness ratio) in the output image data of the measurement visual field 153A is different between when the wafer W is shifted from the reference position Wst and when the wafer W is at the reference position Wst. To do. Therefore, the positional deviation of the wafer W can be detected by comparing the light / dark ratio for the target wafer W with the light / dark ratio for the wafer at the reference position Wst. The displacement direction can be obtained.

この場合，測定視野１５３Ａの明暗割合が基準位置Ｗｓｔの場合の割合と同じになるように，位置ずれ量と位置ずれ方向に応じて支持ピン１３２Ａ〜１３２Ｃを水平方向に駆動して，ウエハＷの水平方向の位置を調整することができる。   In this case, the support pins 132A to 132C are driven in the horizontal direction in accordance with the position shift amount and the position shift direction so that the light / dark ratio of the measurement visual field 153A is the same as that in the reference position Wst. The horizontal position can be adjusted.

さらに，ウエハＷの水平方向の位置ずれは，上記の他，予めウエハＷが位置ずれしていない場合のウエハＷの周縁形状のパターン（基準パターン）を記憶手段に記憶しておき，実際に検出されたウエハＷの周縁形状のパターンと上記基準パターンを比較することによって，ウエハＷの位置ずれの有無を判断し，ウエハＷの周縁形状のパターンと上記基準パターンとの相違に基づいて位置ずれ方向およびその量を算出するようにしてもよい。   Further, in addition to the above, the horizontal displacement of the wafer W is detected in advance by storing a peripheral shape pattern (reference pattern) of the wafer W when the wafer W is not displaced in advance. By comparing the peripheral pattern of the wafer W and the reference pattern, it is determined whether or not the wafer W is misaligned, and the misalignment direction is determined based on the difference between the peripheral pattern of the wafer W and the reference pattern. And the amount thereof may be calculated.

ところで，本実施形態にかかる基板受け渡し装置１３０のようにウエハＷを支持ピンを上昇させて受け取る場合には，上方からウエハＷの端部を引っかけて吊り上げる受け渡しアームのようにアーム上でウエハＷの位置が規制されるような受け渡し部材で受け取る場合に比して，ウエハＷの位置ずれが大きい場合がある。   By the way, when the wafer W is received by raising the support pins as in the substrate transfer apparatus 130 according to the present embodiment, the wafer W is placed on the arm like a transfer arm that lifts the end of the wafer W by lifting it from above. In some cases, the positional deviation of the wafer W may be larger than in the case of receiving with a delivery member whose position is regulated.

例えばいずれの測定視野１５３Ａ〜１５３Ｃの出力画像データにもウエハＷの周縁部が存在しないほど大きく位置ずれすることもある。具体的には測定視野によっては，全部が明るい領域になったり（この場合は測定視野が白状態（又は明状態）と判定），全部が暗い領域になったり（この場合は測定視野が黒状態（又は暗状態）と判定）して，ウエハＷの周縁部を検出できない。これでは，ウエハＷの位置を検出できないので位置ずれの程度もわからず，ウエハの位置ずれを補正することができない。   For example, the output image data of any of the measurement visual fields 153A to 153C may be displaced so much that the peripheral portion of the wafer W does not exist. Specifically, depending on the measurement field of view, the entire field is bright (in this case, the measurement field is determined to be white (or bright)), or the entire field is dark (in this case, the field of measurement is black). (Or a dark state)), the peripheral edge of the wafer W cannot be detected. In this case, since the position of the wafer W cannot be detected, the degree of positional deviation is not known, and the positional deviation of the wafer cannot be corrected.

ここで，このような測定視野の白黒判定（明暗判定）とウエハ位置との関係について説明する。例えばある測定視野が白状態と判定された場合（測定視野全部が明るい領域の場合）には，その測定視野にはウエハＷが存在しないことになる。このとき支持ピン１３２Ａ〜１３２Ｃ上にウエハＷが存在する場合には，ウエハＷの中心はその測定視野から基準位置Ｗｓｔのウエハの中心（基準となる中心）へ向けて大きく位置ずれしている蓋然性が高い。また，ある測定視野が黒状態と判定された場合（測定視野全部が暗い領域の場合）には，その測定視野にはウエハＷが存在するものの，ウエハＷの中心は基準位置Ｗｓｔのウエハの中心からその測定視野へ向けて大きく位置ずれしている蓋然性が高い。   Here, the relationship between the black and white determination (brightness determination) of the measurement visual field and the wafer position will be described. For example, when it is determined that a certain measurement visual field is in a white state (when the entire measurement visual field is a bright region), the wafer W does not exist in the measurement visual field. At this time, when the wafer W is present on the support pins 132A to 132C, the probability that the center of the wafer W is greatly displaced from the measurement field of view toward the center of the wafer at the reference position Wst (reference center). Is expensive. If a certain measurement field is determined to be in a black state (when the entire measurement field is a dark region), the wafer W is present in the measurement field, but the center of the wafer W is the center of the wafer at the reference position Wst. It is highly probable that the position is greatly displaced from the position toward the measurement field of view.

従って，ある測定視野が白状態と判定された場合には，その測定視野から基準位置Ｗｓｔのウエハの中心へ向けて近づけるように支持ピン１３２Ａ〜１３２Ｃを水平移動させてウエハＷの位置ずれを補正できる。また，ある測定視野が黒状態と判定された場合には，基準位置Ｗｓｔのウエハの中心からその測定視野へ向けて遠ざけるように支持ピン１３２Ａ〜１３２Ｃを水平移動させてウエハＷの位置ずれを補正できる。さらに，複数の測定視野で白黒判定があった場合には，それらの組合せによって位置ずれしている方向を推測できる。従って，これらの白黒判定の組合せに応じて位置ずれ調整方向を決定することにより，ウエハの位置ずれを調整することができる。これにより，ウエハの位置が検出できなくても，おおよそ位置ずれが補正される方向へウエハの位置を調整することができる。   Accordingly, when a certain measurement visual field is determined to be in a white state, the support pins 132A to 132C are horizontally moved so as to approach the center of the wafer at the reference position Wst from the measurement visual field, thereby correcting the positional deviation of the wafer W. it can. Further, when a certain measurement visual field is determined to be in a black state, the support pins 132A to 132C are horizontally moved so as to move away from the center of the wafer at the reference position Wst toward the measurement visual field, thereby correcting the positional deviation of the wafer W. it can. Furthermore, when there are black and white determinations in a plurality of measurement visual fields, it is possible to estimate the direction in which the position is shifted by the combination thereof. Therefore, the positional deviation of the wafer can be adjusted by determining the positional deviation adjustment direction according to the combination of these black and white determinations. Thereby, even if the position of the wafer cannot be detected, the position of the wafer can be adjusted in the direction in which the positional deviation is corrected.

例えば図５Ａに示すように，測定視野１５３Ａ〜１５３Ｃのすべてが白状態と判定された場合には，ウエハＷの中心はすべての測定視野１５３Ａ〜１５３Ｃから遠ざかる方向（ここではＹ軸のプラス方向）へ大きく位置ずれしている。この場合には，ウエハＷの中心がすべての測定視野１５３Ａ〜１５３Ｃに近づく方向，すなわち基準位置Ｗｓｔのウエハの中心から各測定視野１５３Ａ〜１５３Ｃまでのそれぞれの向き（方向ベクトル）を合成した方向（ここではＹ軸のマイナス方向）に支持ピン１３２Ａ〜１３２Ｃを水平移動させることにより，図５Ｂに示すようにウエハＷの位置ずれを補正することができる。なお，図示はしないが，測定視野１５３Ａ〜１５３Ｃのすべてが黒状態と判定された場合には，ウエハＷの中心がすべての測定視野１５３Ａ〜１５３Ｃから遠ざかる方向，すなわち各測定視野１５３Ａ〜１５３Ｃから基準位置Ｗｓｔのウエハの中心までのそれぞれの向きを合成した方向（ここではＹ軸のプラス方向）に支持ピン１３２Ａ〜１３２Ｃを水平移動させることにより，ウエハの位置ずれを補正することができる。   For example, as shown in FIG. 5A, when all of the measurement visual fields 153A to 153C are determined to be white, the center of the wafer W is away from all the measurement visual fields 153A to 153C (here, the positive direction of the Y axis). The position is greatly displaced. In this case, the direction in which the center of the wafer W approaches all the measurement visual fields 153A to 153C, that is, the direction in which the respective directions (direction vectors) from the center of the wafer at the reference position Wst to the respective measurement visual fields 153A to 153C are combined ( Here, by moving the support pins 132A to 132C horizontally in the negative direction of the Y-axis, the positional deviation of the wafer W can be corrected as shown in FIG. 5B. Although not shown, when all the measurement visual fields 153A to 153C are determined to be in the black state, the direction in which the center of the wafer W moves away from all the measurement visual fields 153A to 153C, that is, the reference from each measurement visual field 153A to 153C. By moving the support pins 132A to 132C horizontally in a direction (in this case, the positive direction of the Y axis) in which the respective directions up to the center of the wafer at the position Wst are combined, the positional deviation of the wafer can be corrected.

例えば図６Ａに示すように，測定視野１５３ＡではウエハＷの周縁部を検出できるものの，測定視野１５３Ｂ，１５３ＣではウエハＷの周縁部を検出できず，白状態と判定された場合には，ウエハＷの中心は測定視野１５３Ｂ及び１５３Ｃから遠ざかる方向へ大きく位置ずれしている。この場合には，ウエハＷの中心は測定視野１５３Ｂ，１５３Ｃから遠ざかる方向，すなわち基準位置Ｗｓｔのウエハの中心から各測定視野１５３Ｂ，１５３Ｃまでのそれぞれの向きを合成した方向に支持ピン１３２Ａ〜１３２Ｃを水平移動させることにより，図６Ｂに示すようにウエハＷの位置ずれを補正することができる。   For example, as shown in FIG. 6A, the peripheral edge of the wafer W can be detected in the measurement visual field 153A, but the peripheral edge of the wafer W cannot be detected in the measurement visual fields 153B and 153C. Is largely displaced in the direction away from the measurement visual fields 153B and 153C. In this case, the support pins 132A to 132C are placed in the direction in which the center of the wafer W moves away from the measurement visual fields 153B and 153C, that is, the direction in which the respective directions from the center of the wafer at the reference position Wst to the measurement visual fields 153B and 153C are combined. By horizontally moving, the positional deviation of the wafer W can be corrected as shown in FIG. 6B.

例えば図７Ａに示すように，測定視野１５３ＢではウエハＷの周縁部を検出できるものの，測定視野１５３Ａ，１５３ＣについてはウエハＷの周縁部を検出できず，測定視野１５３Ａでは黒状態と判定されるとともに，測定視野１５３Ｃでは白状態と判定された場合には，ウエハＷの中心は測定視野１５３Ａに近づく方向であって測定視野１５３Ｃから遠ざかる方向（ここではＸ軸のマイナス方向）へ大きく位置ずれしている。この場合には，ウエハＷの中心は測定視野１５３Ａから遠ざかる方向であって測定視野１５３Ｃに近づく方向，すなわち測定視野１５３Ａから基準位置Ｗｓｔのウエハの中心までの向きと，基準位置Ｗｓｔのウエハの中心から測定視野１５３Ｃまでの向きをそれぞれ合成した方向（ここではＸ軸のプラス方向）に支持ピン１３２Ａ〜１３２Ｃを水平移動させることにより，図７Ｂに示すようにウエハＷの位置ずれを補正することができる。   For example, as shown in FIG. 7A, the measurement visual field 153B can detect the peripheral edge of the wafer W, but the measurement visual fields 153A and 153C cannot detect the peripheral edge of the wafer W, and the measurement visual field 153A is determined to be in a black state. When the measurement visual field 153C is determined to be in the white state, the center of the wafer W is greatly displaced in the direction approaching the measurement visual field 153A and away from the measurement visual field 153C (here, the negative direction of the X axis). Yes. In this case, the center of the wafer W is a direction away from the measurement visual field 153A and approaches the measurement visual field 153C, that is, the direction from the measurement visual field 153A to the center of the wafer at the reference position Wst, and the center of the wafer at the reference position Wst. 7B to correct the positional deviation of the wafer W as shown in FIG. 7B by horizontally moving the support pins 132A to 132C in the direction in which the directions from the measurement field to the measurement field 153C are combined (here, the positive direction of the X axis). it can.

このように，測定視野の白黒判定に応じてウエハの位置ずれを検出してその補正を行うことにより，ウエハＷの周縁部を検出できないほど大きく位置ずれしていた場合であっても，ウエハの位置ずれを補正することができる。なお，白黒判定によって得られる位置ずれ補正方向にウエハＷを所定量ずつ移動させて，測定視野１５３Ａ〜１５３ＣのすべてにウエハＷの周縁部が入った時点で，ウエハＷの周縁部を検出してウエハの中心位置を求めて，ウエハ位置を検出するようにしてもよい。これにより，ウエハＷが大きく位置ずれしていた場合あっても，ウエハＷの位置をより正確に検出することができる。   In this way, by detecting and correcting the wafer position deviation according to the black and white determination of the measurement field of view, even if the position of the wafer W has been displaced so much that the peripheral edge of the wafer W cannot be detected, Misalignment can be corrected. Note that the wafer W is moved by a predetermined amount in the position correction direction obtained by the black and white determination, and when the peripheral portion of the wafer W enters all the measurement visual fields 153A to 153C, the peripheral portion of the wafer W is detected. The wafer position may be detected by obtaining the center position of the wafer. Thereby, even if the wafer W is largely displaced, the position of the wafer W can be detected more accurately.

上述したような載置台ユニット１１０，基板受け渡し装置１３０，基板位置検出ユニット１５０の各部は制御部２００により制御される。制御部２００は，例えば制御部本体を構成するＣＰＵ（Ｃｅｎｔｒａｌ Ｐｒｏｃｅｓｓｉｎｇ Ｕｎｉｔ），ＣＰＵが処理を行うために必要なデータを記憶するＲＯＭ（Ｒｅａｄ Ｏｎｌｙ Ｍｅｍｏｒｙ），ＣＰＵが行う各種データ処理のために使用されるメモリエリアなどを設けたＲＡＭ（Ｒａｎｄｏｍ Ａｃｃｅｓｓ Ｍｅｍｏｒｙ），ＣＰＵが各部を制御するためのプログラムや各種データを記憶するハードディスク（ＨＤＤ）又はメモリ等の記憶手段などにより構成される。   Each unit of the mounting table unit 110, the substrate transfer device 130, and the substrate position detection unit 150 as described above is controlled by the control unit 200. The control unit 200 is used for, for example, a central processing unit (CPU) that constitutes a control unit main body, a ROM (Read Only Memory) that stores data necessary for the CPU to perform processing, and various data processing performed by the CPU. A RAM (Random Access Memory) provided with a memory area and the like, a program for the CPU to control each unit, a hard disk (HDD) that stores various data, a storage unit such as a memory, and the like.

（ウエハ受け渡し処理）
次に，上述した基板受け渡し装置によって行われるウエハの受け渡し処理の具体例について図面を参照しながら説明する。制御部２００は記憶手段から読出した所定のプログラムに基づいて基板受け渡し装置１３０，基板位置検出ユニット１５０の各部を制御して受け渡し処理を実行する。図８は，搬送アーム上のウエハを受け取って載置台に載置させる際の受け渡し処理の具体例を示すフローチャートである。また，図９Ａ〜図９Ｅは，ウエハの受け渡し処理における基板受け渡し装置１３０の動作例を説明するための作用説明図である。なお，図９Ａ〜図９Ｅにおいて，ＣｗはウエハＷの中心を示し，Ｃｔは上述した基準位置Ｗｓｔのウエハの中心を示す。 (Wafer delivery processing)
Next, a specific example of wafer transfer processing performed by the substrate transfer apparatus described above will be described with reference to the drawings. The control unit 200 controls each part of the substrate transfer device 130 and the substrate position detection unit 150 based on a predetermined program read from the storage means, and executes a transfer process. FIG. 8 is a flowchart showing a specific example of the delivery process when the wafer on the transfer arm is received and placed on the mounting table. 9A to 9E are operation explanatory diagrams for explaining an operation example of the substrate transfer apparatus 130 in the wafer transfer process. 9A to 9E, Cw represents the center of the wafer W, and Ct represents the center of the wafer at the reference position Wst described above.

搬送アームＴＡ上のウエハＷを載置台１１２に受け渡す際には，図８に示すように，まずステップＳ１１０にて支持ピン１３２Ａ〜１３２Ｃを上昇させて搬送アームＴＡ上のウエハＷを受け取る。具体的には図９Ａに示すように，ウエハＷを載せた搬送アームＴＡが載置台１１２の上側に差し入れられると，Ｚ方向駆動手段１３８Ｚを駆動させて支持ピン１３２Ａ〜１３２Ｃを所定のウエハＷの受け取り高さまでＺ（鉛直）方向に上昇させる。すると，各支持ピン１３２Ａ〜１３２Ｃの先端は，それぞれ各貫通孔１１３Ａ〜１１３Ｃを通って載置台１１２の載置面から上方へ突出し，さらに上昇して図９Ｂに示すように搬送アームＴＡ上のウエハＷを持ち上げる。こうして，支持ピン１３２Ａ〜１３２Ｃの先端でウエハＷを受け取ると，搬送アームＴＡは，図９Ｂに示すように載置台１１２の上側から引き抜かれて図９Ｃに示すようになる。   When transferring the wafer W on the transfer arm TA to the mounting table 112, first, in step S110, the support pins 132A to 132C are raised to receive the wafer W on the transfer arm TA as shown in FIG. Specifically, as shown in FIG. 9A, when the transfer arm TA on which the wafer W is placed is inserted into the upper side of the mounting table 112, the Z-direction driving means 138Z is driven to move the support pins 132A to 132C to the predetermined wafer W. Raise in the Z (vertical) direction to the receiving height. Then, the tips of the support pins 132A to 132C protrude upward from the mounting surface of the mounting table 112 through the through holes 113A to 113C, respectively, and further rise to the wafer on the transfer arm TA as shown in FIG. 9B. Lift W. Thus, when the wafer W is received at the tips of the support pins 132A to 132C, the transfer arm TA is pulled out from the upper side of the mounting table 112 as shown in FIG. 9B and becomes as shown in FIG. 9C.

このように，本実施形態では支持ピン１３２Ａ〜１３２Ｃで搬送アームＴＡからウエハＷを受け取る際，支持ピン１３２Ａ〜１３２Ｃの方を上昇させて受け取るようにしているが，必ずしもこれに限定されるものではない。例えば搬送アームＴＡが昇降可能に構成されている場合には，搬送アームＴＡの方を下降させて支持ピン１３２Ａ〜１３２Ｃの先端にウエハＷを下ろすようにしてもよい。この場合には，先ずＺ方向駆動手段１３８Ｚを駆動させて支持ピン１３２Ａ〜１３２ＣをＺ軸方向に上昇させた状態で，ウエハＷを載せた搬送アームＴＡを載置台１１２の上側に差し入れる。そして，搬送アームＴＡの方を下降させて支持ピン１３２Ａ〜１３２Ｃで受け取る。これによれば，支持ピン１３２Ａ〜１３２Ｃを上昇させたままウエハＷを受け取ることができる。   As described above, in this embodiment, when the wafer W is received from the transfer arm TA by the support pins 132A to 132C, the support pins 132A to 132C are raised and received. However, the present invention is not necessarily limited to this. Absent. For example, when the transfer arm TA is configured to be movable up and down, the transfer arm TA may be lowered and the wafer W may be lowered to the tips of the support pins 132A to 132C. In this case, first, the transfer arm TA on which the wafer W is placed is inserted into the upper side of the mounting table 112 in a state in which the Z-direction driving unit 138Z is driven to raise the support pins 132A to 132C in the Z-axis direction. Then, the transfer arm TA is lowered and received by the support pins 132A to 132C. According to this, the wafer W can be received while the support pins 132A to 132C are raised.

なお，図９Ａに示すように載置台１１２の上側に搬送アームＴＡで差し入れられたときに，ウエハＷの水平方向の位置ずれ（ここでは基準位置Ｗｓｔのウエハの中心（基準となる中心）Ｃｔに対するウエハＷの中心Ｃｗの位置ずれ）が生じていると，そのままウエハＷを支持ピン１３２Ａ〜１３２Ｃで上方に持ち上げることになる。   As shown in FIG. 9A, when the transfer arm TA is inserted above the mounting table 112, the horizontal displacement of the wafer W (here, the reference position Wst with respect to the wafer center (reference center) Ct). If a deviation in the position of the center Cw of the wafer W has occurred, the wafer W is lifted upward by the support pins 132A to 132C as it is.

このようなウエハＷの位置ずれは，以降のウエハの位置決め処理（ステップＳ１２０〜ステップＳ１４０）によって支持ピン１３２Ａ〜１３２ＣでウエハＷを支持したまま，ウエハＷの水平方向の位置ずれを検出し，支持ピン１３２Ａ〜１３２Ｃを水平方向へ移動させることによって補正する。これにより，搬送アームＴＡは，ウエハを支持ピンに渡した後は，すぐに次の作業（例えば他のウエハを搬送する作業）を開始することができるので，ウエハ処理のスループットを向上させることができる。   Such positional deviation of the wafer W is detected by detecting the positional deviation in the horizontal direction of the wafer W while supporting the wafer W with the support pins 132A to 132C by the subsequent wafer positioning process (steps S120 to S140). Correction is performed by moving the pins 132A to 132C in the horizontal direction. As a result, the transfer arm TA can start the next operation (for example, the operation of transferring another wafer) immediately after the wafer is transferred to the support pins, thereby improving the wafer processing throughput. it can.

このようなウエハの位置決め処理では，先ずステップＳ１２０にて基板位置検出ユニット１５０によってウエハＷの位置を検出する。ここでは，ウエハＷを各支持ピン１３２Ａ〜１３２Ｃで支持したままウエハＷの水平方向の位置を検出する。具体的には上述したように，照明用光源１５４Ａ〜１５４Ｃを発光させて撮像手段１５２Ａ〜１５２Ｃで撮像して得られた測定視野１５３Ａ〜１５３Ｃの出力画像データに基づいてウエハＷの位置を検出する。例えば出力画像データにより検出されたウエハＷの周縁部の形状からウエハＷの中心をウエハＷの位置として検出する。   In such wafer positioning processing, the position of the wafer W is first detected by the substrate position detection unit 150 in step S120. Here, the horizontal position of the wafer W is detected while the wafer W is supported by the support pins 132A to 132C. Specifically, as described above, the position of the wafer W is detected based on the output image data of the measurement visual fields 153A to 153C obtained by causing the illumination light sources 154A to 154C to emit light and imaging with the imaging units 152A to 152C. . For example, the center of the wafer W is detected as the position of the wafer W from the shape of the peripheral edge of the wafer W detected from the output image data.

次にステップＳ１３０にてウエハＷに位置ずれがあるか否かを判断する。具体的には，検出されたウエハＷの位置に基づいて，ウエハＷの水平方向の位置ずれ量を求め，位置ずれ量が所定の許容位置ずれ範囲内にある場合には位置ずれなしと判断し，位置ずれ量が所定の許容位置ずれ範囲を超える場合には位置ずれありと判断する。   Next, in step S130, it is determined whether or not the wafer W is misaligned. Specifically, based on the detected position of the wafer W, a horizontal displacement amount of the wafer W is obtained, and if the displacement amount is within a predetermined allowable displacement range, it is determined that there is no displacement. , It is determined that there is a positional deviation when the positional deviation amount exceeds a predetermined allowable positional deviation range.

例えばウエハＷの中心をウエハＷの位置として検出する場合には，そのウエハＷの中心と基準位置Ｗｓｔのウエハの中心（基準となる中心）とのずれ量をウエハＷの位置ずれ量として算出する。なお，ウエハＷの位置ずれ量の算出はこれに限られるものではなく，例えば上述したように明るい領域と暗い領域との割合（明暗割合）を，ウエハＷが基準位置Ｗｓｔにある場合の明暗割合と比較して位置ずれ量を算出してもよく，またウエハ周縁部形状のパターンを基準位置Ｗｓｔのパターンと比較して位置ずれ量を算出してもよい。   For example, when the center of the wafer W is detected as the position of the wafer W, a deviation amount between the center of the wafer W and the center of the wafer (reference center) at the reference position Wst is calculated as the positional deviation amount of the wafer W. . The calculation of the positional deviation amount of the wafer W is not limited to this. For example, as described above, the ratio (brightness / darkness ratio) between the bright area and the dark area is the light / dark ratio when the wafer W is at the reference position Wst. The positional deviation amount may be calculated by comparing the pattern of the wafer peripheral portion with the pattern of the reference position Wst.

ステップＳ１３０にてウエハＷに位置ずれがないと判断した場合には，ステップＳ１５０にてそのまま支持ピン１３２Ａ〜１３２Ｃを下降させてウエハＷを載置台１１２に載置させる。これに対して，ウエハＷに位置ずれがあると判断した場合には，ステップＳ１４０にて，Ｘ方向駆動手段１３８Ｘ及びＹ方向駆動手段１３８Ｙを駆動させることによって支持ピン１３２Ａ〜１３２Ｃを水平方向へ移動させてウエハＷの位置を補正する。例えば図９Ｃに示すようにウエハＷがＸ軸のマイナス方向にずれている場合には，Ｘ方向駆動手段１３８Ｘのみを駆動して支持ピン１３２Ａ〜１３２ＣをＸ軸のプラス方向へ移動させる。これによって，図９Ｄに示すようにウエハＷの中心Ｃｗと基準位置Ｗｓｔのウエハの中心Ｃｔとが一致するようにウエハＷを位置決めすることができる。   If it is determined in step S130 that the wafer W is not misaligned, the support pins 132A to 132C are lowered as they are in step S150 to place the wafer W on the mounting table 112. On the other hand, if it is determined that the wafer W is misaligned, in step S140, the support pins 132A to 132C are moved in the horizontal direction by driving the X direction driving means 138X and the Y direction driving means 138Y. Thus, the position of the wafer W is corrected. For example, as shown in FIG. 9C, when the wafer W is displaced in the negative direction of the X axis, only the X direction driving means 138X is driven to move the support pins 132A to 132C in the positive direction of the X axis. As a result, as shown in FIG. 9D, the wafer W can be positioned so that the center Cw of the wafer W coincides with the center Ct of the wafer at the reference position Wst.

なお，ウエハＷの位置を補正する場合には，予めウエハＷの位置ずれ量及び位置ずれ方向を算出してから，ウエハＷの位置ずれ量及び位置ずれ方向に応じて支持ピン１３２Ａ〜１３２Ｃの水平方向への移動させるようにしてもよく，また支持ピン１３２Ａ〜１３２Ｃを水平方向に所定量ずつ移動させて，その都度撮像手段１５２Ａ〜１５２ＣによってウエハＷの位置を検出して確認しながら，ウエハＷを基準位置まで移動させるようにしてもよい。   When correcting the position of the wafer W, the positional deviation amount and the positional deviation direction of the wafer W are calculated in advance, and then the support pins 132A to 132C are horizontally aligned according to the positional deviation amount and the positional deviation direction of the wafer W. Alternatively, the support pins 132A to 132C may be moved by a predetermined amount in the horizontal direction, and the position of the wafer W may be detected and confirmed by the image pickup means 152A to 152C each time. May be moved to the reference position.

こうして，ウエハＷの位置決め処理（ステップＳ１２０〜ステップＳ１４０）が終了すると，ステップＳ１５０にて支持ピン１３２Ａ〜１３２Ｃを下降させてウエハＷを載置台１１２上に載置させる。具体的には図９Ｄに示すように，Ｚ方向駆動手段１３８Ｚを駆動させて支持ピン１３２Ａ〜１３２Ｃを下降させて，ウエハＷを載置台１１２上に下ろす。これにより，図９Ｅに示すように，水平方向の位置が補正されたウエハＷが載置台１１２上に載置される。こうしてウエハＷの受け渡し処理が終了する。   Thus, when the wafer W positioning process (steps S120 to S140) is completed, the support pins 132A to 132C are lowered to place the wafer W on the mounting table 112 in step S150. Specifically, as shown in FIG. 9D, the Z-direction driving unit 138Z is driven to lower the support pins 132A to 132C, and the wafer W is lowered onto the mounting table 112. As a result, as shown in FIG. 9E, the wafer W whose horizontal position is corrected is placed on the placement table 112. Thus, the wafer W delivery process is completed.

なお，支持ピン１３２Ａ〜１３２Ｃを下降させる場合には，その先端を貫通孔１１３Ａ〜１１３Ｃを介して載置台１１２の下面よりも下側まで待避させることが好ましい。これにより，例えば載置台１１２が回転する場合に支持ピン１３２Ａ〜１３２Ｃが干渉することを防止できる。   When lowering the support pins 132A to 132C, it is preferable to retract the tips of the support pins 132A to 132C below the lower surface of the mounting table 112 through the through holes 113A to 113C. Thereby, for example, when the mounting table 112 rotates, the support pins 132A to 132C can be prevented from interfering with each other.

また，図８に示すステップＳ１２０において，測定視野１５３Ａ〜１５３Ｃの出力画像データからウエハＷの周縁部が検出できないほどウエハＷが位置ずれしている場合には，ステップＳ１４０にて，上述したような各測定視野１５３Ａ〜１５３Ｃの白黒判定の組合せに応じて位置ずれ補正方向を決定して，ウエハの位置ずれを補正するようにしてもよい。これによれば，ウエハＷの周縁部を検出できないほど大きく位置ずれしていた場合であっても，ウエハの位置ずれを補正することができる。また，これに限られず，例えばステップＳ１２０にて白黒判定による位置ずれ補正方向に測定視野１５３Ａ〜１５３ＣのすべてにウエハＷの周縁部が入るまで所定量ずつウエハＷを移動させた上で，ウエハＷの周縁部を検出して以降の処理を行うようにしてもよい。   Further, in step S120 shown in FIG. 8, when the wafer W is displaced so that the peripheral edge of the wafer W cannot be detected from the output image data of the measurement visual fields 153A to 153C, in step S140, as described above. The misalignment correction direction may be determined according to the combination of the black and white determinations of the measurement visual fields 153A to 153C to correct the misalignment of the wafer. According to this, even if the position of the wafer W has been displaced so much that the peripheral portion of the wafer W cannot be detected, the wafer position deviation can be corrected. In addition, for example, in step S120, the wafer W is moved by a predetermined amount in the direction of correction of misalignment by black and white determination until the peripheral portion of the wafer W enters all of the measurement visual fields 153A to 153C. It is also possible to perform the subsequent processing by detecting the peripheral edge.

また，図８に示す処理では，本実施形態にかかる基板受け渡し装置１３０を利用してウエハＷを搬送アームＴＡから載置台１１２に受け渡す場合について説明したが，基板受け渡し装置１３０を利用してウエハＷを載置台１１２から搬送アームＴＡに受け渡す場合においても，載置台１１２上のウエハＷを支持ピン１３２Ａ〜１３２Ｃで持ち上げて受け取ると，そのままウエハＷの位置を検出し，ウエハＷの位置を補正してから搬送アームＴＡに渡すようにしてもよい。こうすることにより，例えばウエハＷが支持ピン１３２Ａ〜１３２Ｃの水平方向へ移動させても補正できないほど大きくずれている場合に，少なくとも搬送アームＴＡでウエハＷを取り出し可能な位置までウエハＷを移動させることができる。   In the process shown in FIG. 8, the case where the wafer W is transferred from the transfer arm TA to the mounting table 112 using the substrate transfer apparatus 130 according to the present embodiment has been described. However, the wafer transfer using the substrate transfer apparatus 130 is performed. Even when W is transferred from the mounting table 112 to the transfer arm TA, if the wafer W on the mounting table 112 is lifted and received by the support pins 132A to 132C, the position of the wafer W is detected as it is and the position of the wafer W is corrected. Then, it may be transferred to the transfer arm TA. By doing so, for example, when the wafer W is shifted so much that it cannot be corrected even if it is moved in the horizontal direction of the support pins 132A to 132C, the wafer W is moved at least to a position where the wafer W can be taken out by the transfer arm TA. be able to.

以上のように，本実施形態によれば，支持ピン１３２Ａ〜１３２Ｃを水平方向（ＸＹ方向）に移動可能に構成したことにより，例えば搬送アームＴＡからウエハＷを支持ピン１３２Ａ〜１３２Ｃで受け取った後は，搬送アームＴＡを使わずに，支持ピン１３２Ａ〜１３２ＣでウエハＷを支持したまま水平方向に駆動させることができる。これにより，ウエハＷの位置ずれを素早く補正することができる。また，搬送アームＴＡは支持ピン１３２Ａ〜１３２Ｃにウエハを渡した後はすぐに他の作業（例えば他のウエハの搬送動作）を行うことができる。したがって，ウエハ処理のスループットを向上させることができる。   As described above, according to this embodiment, since the support pins 132A to 132C are configured to be movable in the horizontal direction (XY direction), for example, after the wafer W is received from the transfer arm TA by the support pins 132A to 132C. Can be driven in the horizontal direction while supporting the wafer W by the support pins 132A to 132C without using the transfer arm TA. Thereby, the positional deviation of the wafer W can be corrected quickly. Further, the transfer arm TA can perform another operation (for example, transfer operation of another wafer) immediately after the wafer is transferred to the support pins 132A to 132C. Therefore, the throughput of wafer processing can be improved.

また，ウエハＷの水平方向への位置決めは，高分解能を有し高速動作可能なＸ方向駆動手段１３８ＸとＹ方向駆動手段１３８Ｙによって行われるため，短時間のうちに，ウエハＷを載置台１１２の載置面の正確な位置（基準位置）に載置することができる。したがって，さらにウエハ処理のスループットを向上させることができるとともに，載置台１１２のウエハ載置面に載置されたウエハＷに対する処理を確実に精度よく行うことができる。   Further, since the positioning of the wafer W in the horizontal direction is performed by the X-direction driving unit 138X and the Y-direction driving unit 138Y that have high resolution and can operate at high speed, the wafer W is placed on the mounting table 112 in a short time. It can be mounted at an accurate position (reference position) on the mounting surface. Therefore, the throughput of the wafer processing can be further improved, and the processing for the wafer W placed on the wafer placement surface of the placement table 112 can be reliably performed with high accuracy.

また，本実施形態にかかる基板受け渡し装置１３０は，載置台ユニット１１０とは別体で構成としているので，簡単な構成にすることができる。また，処理室内への設置の自由度も高くなるので，様々な処理室に適用可能となる。さらに，載置台１１２が回転する場合には，載置台ユニット１１０と基板受け渡し装置１３０を別体にすることにより，載置台１１２を高速回転させることができる。また，基板受け渡し装置１３０についても，Ｘ方向駆動手段１３８ＸとＹ方向駆動手段１３８Ｙで支持ピン１３２Ａ〜１３２Ｃを水平方向に駆動する構成を採ることができるので，高精度でウエハＷの位置補正を行うことができる。   Moreover, since the board | substrate delivery apparatus 130 concerning this embodiment is set as the structure different from the mounting base unit 110, it can be set as a simple structure. In addition, since the degree of freedom of installation in the processing chamber is increased, it can be applied to various processing chambers. Furthermore, when the mounting table 112 rotates, the mounting table 112 can be rotated at high speed by making the mounting table unit 110 and the substrate transfer device 130 separate. In addition, since the substrate transfer apparatus 130 can also be configured to drive the support pins 132A to 132C in the horizontal direction by the X direction driving means 138X and the Y direction driving means 138Y, the position of the wafer W is corrected with high accuracy. be able to.

さらに，本実施形態にかかる基板受け渡し装置１３０は，載置台を水平方向に駆動させて位置ずれを補正するのではなく，支持ピン１３２Ａ〜１３２Ｃを水平方向に駆動させて位置ずれを補正するようにしたので，例えばウエハＷの位置ずれが大きくて基板位置検出ユニット１５０で検出できない場合でも，支持ピン１３２Ａ〜１３２ＣでウエハＷを持ち上げたまま，基板位置検出ユニット１５０で検出できる位置まで支持ピン１３２Ａ〜１３２ＣでウエハＷを水平方向に移動させることができる。これにより，ウエハＷが大きく位置ずれしている場合でも，ウエハＷの位置を検出して位置ずれを素早く補正することができる。   Furthermore, the substrate transfer device 130 according to the present embodiment corrects the positional deviation by driving the support pins 132A to 132C in the horizontal direction, instead of correcting the positional deviation by driving the mounting table in the horizontal direction. Therefore, for example, even when the wafer W has a large positional shift and cannot be detected by the substrate position detection unit 150, the support pins 132A to 132C can be detected by the substrate position detection unit 150 while the wafer W is lifted by the support pins 132A to 132C. At 132C, the wafer W can be moved in the horizontal direction. Thereby, even when the wafer W is largely displaced, the position of the wafer W can be detected and the displacement can be corrected quickly.

ところで，ウエハＷの位置合わせには，例えばウエハＷのオリエンテーションフラットやノッチなどを検出する方法を用いる場合がある。この方法によれば，ウエハＷを少なくとも１回転させる必要がある。これに対して，本実施形態によれば，撮像手段１５２Ａ〜１５２Ｃを用いてウエハＷの水平方向の位置ずれを検出するため，ウエハＷを回転させる必要がない。したがって，位置ずれ検出の所要時間はきわめて短くなる。この結果，ウエハ処理のスループットが向上する。   By the way, for alignment of the wafer W, for example, a method of detecting an orientation flat or a notch of the wafer W may be used. According to this method, it is necessary to rotate the wafer W at least once. On the other hand, according to the present embodiment, since the horizontal displacement of the wafer W is detected using the imaging units 152A to 152C, it is not necessary to rotate the wafer W. Therefore, the time required for detecting the displacement is extremely short. As a result, the throughput of wafer processing is improved.

また，本実施形態によれば，搬送アームＴＡから支持ピン１３２Ａ〜１３２ＣにウエハＷが渡された後，ウエハＷを載置台１１２のウエハ載置面に載置する前にすぐにウエハＷの水平方向の位置決め処理を行うことができるので，位置決め処理が完了するまでにかかる時間が短くなる。この結果，ウエハ処理のスループットが向上する。   Further, according to the present embodiment, after the wafer W is transferred from the transfer arm TA to the support pins 132A to 132C, the wafer W is immediately leveled before being placed on the wafer placement surface of the placement table 112. Since the direction positioning process can be performed, the time required to complete the positioning process is shortened. As a result, the throughput of wafer processing is improved.

また，上記実施形態にかかる基板受け渡し装置１３０では，支持ピン１３２Ａ〜１３２Ｃは，Ｚ方向駆動手段１３８Ｚにより貫通孔１１３Ａ〜１１３Ｃを各支持ピン１３２Ａ〜１３２Ｃの先端が突没可能に上下駆動させることができ，また各貫通孔１１３Ａ〜１１３Ｃを通して載置台１１２の載置面から各支持ピン１３２Ａ〜１３２Ｃの先端が突き出したまま，各貫通孔１１３Ａ〜１１３Ｃの中をＸ方向駆動手段１３８Ｘ及びＹ方向駆動手段１３８Ｙにより水平駆動させることができるように構成されているが，本発明はこのような構成に限定されるものではない。   Moreover, in the board | substrate delivery apparatus 130 concerning the said embodiment, the support pins 132A-132C can drive the through-holes 113A-113C up and down so that the front-end | tip of each support pin 132A-132C can protrude and retract by the Z direction drive means 138Z. In addition, the X-direction driving means 138X and the Y-direction driving means can pass through the through holes 113A to 113C while the tips of the support pins 132A to 132C protrude from the mounting surface of the mounting table 112 through the through holes 113A to 113C. Although it is configured so that it can be driven horizontally by 138Y, the present invention is not limited to such a configuration.

例えば図１０に示す基板受け渡し装置１３０のように，各支持ピン１３２Ａ〜１３２Ｃを載置台１１６の支持軸１１４周りに載置台１１６の径よりも外側に離間して配設するようにしてもよい。これによれば，載置台１１６に各支持ピン１３２Ａ〜１３２Ｃを通すための貫通孔１１３Ａ〜１１３Ｃを設ける必要がなくなる。また，貫通孔１１３Ａ〜１１３Ｃの径に制限されることなく支持ピン１３２Ａ〜１３２Ｃを大きく水平移動させることが可能となる。従って，ウエハＷの位置ずれ補正や位置調整を行う際に，ウエハＷの１回分の移動量を大きくとることができる。   For example, as in the substrate transfer device 130 shown in FIG. 10, the support pins 132 </ b> A to 132 </ b> C may be arranged around the support shaft 114 of the mounting table 116 so as to be separated from the diameter of the mounting table 116. According to this, it is not necessary to provide the through holes 113A to 113C for allowing the support pins 132A to 132C to pass through the mounting table 116. In addition, the support pins 132A to 132C can be largely moved horizontally without being limited by the diameters of the through holes 113A to 113C. Therefore, when the wafer W is displaced or adjusted, the amount of movement of the wafer W can be increased.

なお，図１０に示すように載置台１１６よりも外側に支持ピン１３２Ａ〜１３２Ｃを配置する構成では，各支持ピンは載置台の径が大きいほどウエハＷの端部近傍に配置されることになる。このため，ウエハＷの端部に処理を行うような処理室（例えば洗浄処理室４００）に適用する場合には，図１に示すような載置台よりも内側に支持ピン１３２Ａ〜１３２Ｃを配置する構成を採ることが好ましい。   As shown in FIG. 10, in the configuration in which the support pins 132A to 132C are arranged outside the mounting table 116, each supporting pin is arranged near the end of the wafer W as the mounting table has a larger diameter. . For this reason, when applied to a processing chamber (for example, the cleaning processing chamber 400) in which processing is performed on the end portion of the wafer W, the support pins 132A to 132C are arranged on the inner side of the mounting table as shown in FIG. It is preferable to adopt a configuration.

また，本実施形態では，３つの撮像手段１５２Ａ〜１５２Ｃを用いてウエハＷの水平方向の位置ずれを検出する場合について説明したが，必ずしもこれに限定されるものではなく，１つ又は２つの撮像手段でウエハＷの水平方向の位置ずれを検出するようにしてもよい。また，撮像手段１５２Ａ〜１５２Ｃとして，ＣＣＤイメージセンサやＣＣＤカメラ以外にも，各種の光電センサ，超音波センサなどを用いることができる。また，本実施形態では，図３に示すように支持ピン１３２Ａ〜１３２Ｃは，略リング状に形成された取付板１３５に離間して取り付けられるため，ウエハＷがずれていると取付板１３５が傾いて支持板１３６のモーメントが変化する。従って，支持板１３６にモーメントセンサを取付けて，そのモーメントの変化によってウエハＷの位置や，位置ずれを検出することができる。   In the present embodiment, the case where the positional deviation of the wafer W in the horizontal direction is detected using the three imaging units 152A to 152C has been described. However, the present invention is not necessarily limited to this, and one or two imaging units are not necessarily limited to this. A horizontal position shift of the wafer W may be detected by the means. In addition to the CCD image sensor and the CCD camera, various photoelectric sensors, ultrasonic sensors, and the like can be used as the imaging units 152A to 152C. Further, in the present embodiment, as shown in FIG. 3, the support pins 132A to 132C are spaced apart and attached to the attachment plate 135 formed in a substantially ring shape, so that the attachment plate 135 is inclined when the wafer W is displaced. As a result, the moment of the support plate 136 changes. Therefore, a moment sensor is attached to the support plate 136, and the position of the wafer W or a positional deviation can be detected by the change in the moment.

（基板受け渡し装置の適用例）
次に，上記の基板受け渡し装置を適用可能な基板処理装置の一例を図面を参照しながら説明する。図１１は本発明の実施形態にかかる基板処理装置の概略構成を示す断面図である。 (Application example of board transfer device)
Next, an example of a substrate processing apparatus to which the above substrate transfer apparatus can be applied will be described with reference to the drawings. FIG. 11 is a cross-sectional view showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention.

基板処理装置３００は，ウエハＷに対して真空圧雰囲気中で成膜処理，エッチング処理などの各種のプロセス処理を行う複数のプロセス処理室を備えるプロセス処理ユニット３１０と，このプロセス処理ユニット３１０に対してウエハＷを搬出入させる搬送ユニット３２０とを備える。   The substrate processing apparatus 300 includes a process processing unit 310 including a plurality of process processing chambers for performing various kinds of process processing such as film formation processing and etching processing on the wafer W in a vacuum pressure atmosphere. And a transfer unit 320 for loading and unloading the wafer W.

まず，搬送ユニット３２０の構成例について説明する。カセット容器３３２に収容された複数枚（例えば２５枚）のウエハＷを基板処理装置３００に出し入れするための搬送室３３０を備える。搬送室３３０には例えば３つのカセット台３３１Ａ〜３３１Ｃがそれぞれゲートバルブ３３３Ａ〜３３３Ｃを介して設けられており，これらの各カセット台３３１Ａ〜３３１Ｃにはそれぞれカセット容器３３２Ａ〜３３２Ｃがセットできるようになっている。   First, a configuration example of the transport unit 320 will be described. A transfer chamber 330 for taking in and out a plurality of (for example, 25) wafers W accommodated in the cassette container 332 into and out of the substrate processing apparatus 300 is provided. In the transfer chamber 330, for example, three cassette stands 331A to 331C are provided via gate valves 333A to 333C, respectively, and cassette containers 332A to 332C can be set on these cassette stands 331A to 331C, respectively. ing.

また，搬送室３３０には，プロセス処理前にウエハＷの位置合せを行うプリアライメント処理室（オリエンタ）３３６と，プロセス処理後にウエハＷに付着した付着物の除去処理を行う後処理室の１例としての洗浄処理室４００が設けられている。
プリアライメント処理室３３６は，例えばその処理室内に回転可能に配設された載置台３３８と載置台３３８上のウエハＷの周縁部を光学的に検出する光学センサ３３９を備え，載置台３３８でウエハＷを回転させて，ウエハＷの周縁部に形成されるオリエンテーションフラットやノッチなどを光学センサ３３９で検出してウエハＷの位置合せを行う。なお，洗浄処理室４００の具体的構成例については後述する。 The transfer chamber 330 includes an example of a pre-alignment processing chamber (orienter) 336 for aligning the wafer W before the process processing and a post-processing chamber for removing the deposits attached to the wafer W after the process processing. A cleaning processing chamber 400 is provided.
The pre-alignment processing chamber 336 includes, for example, a mounting table 338 that is rotatably disposed in the processing chamber and an optical sensor 339 that optically detects a peripheral portion of the wafer W on the mounting table 338. By rotating W, the orientation flat or notch formed on the peripheral edge of the wafer W is detected by the optical sensor 339 to align the wafer W. A specific configuration example of the cleaning processing chamber 400 will be described later.

搬送室３３０内には，その長手方向（図１１に示す矢印方向）に沿ってスライド自在に構成された搬送ロボット３７０が設けられている。搬送ロボット３７０には，例えばウエハＷを載せて搬送するための搬送アーム３７３Ａ，３７３Ｂが設けられている。搬送アーム３７３Ａ，３７３Ｂは，屈伸・昇降・旋回可能に構成されており，上記カセット容器３３２Ａ〜３３２Ｃ，プリアライメント処理室３３６，洗浄処理室４００，後述するロードロック室３６０Ｍ，３６０Ｎに対してウエハＷの出し入れを行うようになっている。なお，搬送ロボット３７０は２つの搬送アーム３７３Ａ，３７３Ｂを備えるので，これらを利用して例えばロードロック室３６０Ｍ，３６０Ｎ，プリアライメント処理室３３６，洗浄処理室４００などに対して，処理済みのウエハＷと処理前のウエハＷとを交換するように，ウエハＷの出し入れをすることができる。   In the transfer chamber 330, a transfer robot 370 configured to be slidable along the longitudinal direction (the arrow direction shown in FIG. 11) is provided. The transfer robot 370 is provided with transfer arms 373A and 373B for transferring, for example, the wafer W. The transfer arms 373A and 373B are configured so as to be able to bend, extend, move up and down, and rotate. To come in and out. Since the transfer robot 370 includes two transfer arms 373A and 373B, the wafer W that has been processed with respect to, for example, the load lock chambers 360M and 360N, the pre-alignment processing chamber 336, and the cleaning processing chamber 400 is used. The wafer W can be taken in and out so as to exchange the wafer W before processing.

次に，プロセス処理ユニット３１０の構成例について説明する。プロセス処理ユニット３１０は例えば図１１に示すようなクラスタツール型に構成される。すなわち，プロセス処理ユニット３１０は，多角形（例えば六角形）に形成された共通搬送室３５０を備え，この共通搬送室３５０の周囲には，ウエハＷに対して所定のプロセス処理を施す複数（例えば６つ）のプロセス処理室３４０Ａ〜３４０Ｆがそれぞれゲートバルブ３４４Ａ〜３４４Ｆを介して接続される。   Next, a configuration example of the process processing unit 310 will be described. The process processing unit 310 is configured in a cluster tool type as shown in FIG. 11, for example. That is, the process processing unit 310 includes a common transfer chamber 350 formed in a polygonal shape (for example, a hexagonal shape), and a plurality of (for example, a predetermined process process is performed on the wafer W around the common transfer chamber 350. Six) process processing chambers 340A to 340F are connected through gate valves 344A to 344F, respectively.

各プロセス処理室３４０Ａ〜３４０Ｆは，ウエハＷを載置するための載置台３４２（３４２Ａ〜３４２Ｆ）がそれぞれ設けられ，予め制御部５００の記憶媒体などに記憶されたプロセス・レシピなどに基づいて，載置台３４２上のウエハＷに対して例えば成膜処理やエッチング処理などの処理を施すようになっている。なお，プロセス処理室３４０の数は，図１１に示す場合に限られるものではない。   Each of the process chambers 340A to 340F is provided with a mounting table 342 (342A to 342F) for mounting the wafer W, and based on a process recipe stored in advance in a storage medium or the like of the control unit 500, For example, a film forming process or an etching process is performed on the wafer W on the mounting table 342. The number of process processing chambers 340 is not limited to the case shown in FIG.

また，共通搬送室３５０の周囲には，上記搬送室３３０との間でウエハをやり取りするロードロック室３６０Ｍ，３６０Ｎが設けられている。第１，第２ロードロック室３６０Ｍ，３６０Ｎは，その内部に配設された受渡台３６４Ｍ，３６４Ｎを介してウエハＷを一時的に保持し，圧力調整後に真空圧側の共通搬送室３５０と大気圧側の搬送室３３０との間でウエハＷをパスさせるものである。従って，気密保持のため，ロードロック室３６０Ｍ，３６０Ｎは，共通搬送室３５０とはゲートバルブ３５４Ｍ，３５４Ｎを介して接続され，搬送室３３０とはゲートバルブ３６２Ｍ，３６２Ｎを介して接続される。   Around the common transfer chamber 350, load lock chambers 360M and 360N for exchanging wafers with the transfer chamber 330 are provided. The first and second load lock chambers 360M and 360N temporarily hold the wafer W via the delivery tables 364M and 364N disposed therein, and after adjusting the pressure, the common transfer chamber 350 on the vacuum pressure side and the atmospheric pressure The wafer W is passed through to the transfer chamber 330 on the side. Therefore, the load lock chambers 360M and 360N are connected to the common transfer chamber 350 via the gate valves 354M and 354N and are connected to the transfer chamber 330 via the gate valves 362M and 362N in order to maintain airtightness.

共通搬送室３５０内には，その長手方向に沿って設けられた案内レール３８４に沿ってスライド自在に構成された搬送ロボット３８０が設けられている。搬送ロボット３８０には，例えばウエハＷを載せて搬送するための搬送アーム３８３Ａ，３８３Ｂが設けられている。搬送アーム３８３Ａ，３８３Ｂは，屈伸・昇降・旋回可能に構成されており，各プロセス処理室３４０Ａ〜３４０Ｆ，ロードロック室３６０Ｍ，３６０Ｎに対してウエハＷの出し入れを行うようになっている。   In the common transfer chamber 350, a transfer robot 380 configured to be slidable along a guide rail 384 provided along the longitudinal direction thereof is provided. The transfer robot 380 is provided with transfer arms 383A and 383B for transferring, for example, the wafer W. The transfer arms 383A and 383B are configured to be able to bend, elevate and lower, and turn, and the wafer W is taken in and out of the process processing chambers 340A to 340F and the load lock chambers 360M and 360N.

例えば搬送ロボット３８０を共通搬送室３５０の基端側寄りにスライドさせて，各ロードロック室３６０Ｍ，３６０Ｎとプロセス処理室３４０Ａ，３４０Ｆに対してウエハＷの出し入れを行い，また共通搬送室３５０の先端側寄りにスライドさせて，４つのプロセス処理室３４０Ｂ〜３４０Ｅに対してウエハＷの出し入れを行う。なお，搬送ロボット３８０は，２つの搬送アーム３８３Ａ，３８３Ｂを備えるので，これらを利用して例えばプロセス処理室３４０Ａ〜３４０Ｆ，ロードロック室３６０Ｍ，３６０Ｎに対して処理済みのウエハＷと処理前のウエハＷとを交換するように，ウエハＷの出し入れをすることができる。   For example, the transfer robot 380 is slid toward the base end side of the common transfer chamber 350, and wafers W are taken in and out of the load lock chambers 360 M and 360 N and the process processing chambers 340 A and 340 F. The wafer W is slid to the side, and the wafer W is put in and out of the four process processing chambers 340B to 340E. Since the transfer robot 380 includes two transfer arms 383A and 383B, for example, the processed wafer W and the unprocessed wafer W with respect to the process processing chambers 340A to 340F and the load lock chambers 360M and 360N are used. The wafer W can be taken in and out so as to exchange it with W.

なお，基板処理装置３００には，搬送ロボット３７０，３８０，各ゲートバルブ３３３，３４４，３５４，３６２，プリアライメント処理室３３６，洗浄処理室４００などの制御を含め，基板処理装置全体の動作を制御する制御部５００が設けられている。制御部５００は，例えば制御部本体を構成するＣＰＵ ，ＣＰＵが処理を行うために必要なデータを記憶するＲＯＭ，ＣＰＵが行う各種データ処理のために使用されるメモリエリアなどを設けたＲＡＭ，ＣＰＵが各部を制御するためのプログラムや各種データを記憶するハードディスク（ＨＤＤ）又はメモリ等の記憶手段の他，操作画面や選択画面などを表示する液晶ディスプレイ，オペレータによるプロセス・レシピの入力や編集など種々のデータの入力および所定の記憶媒体へのプロセス・レシピやプロセス・ログの出力など各種データの出力などを行うことができる入出力手段，基板処理装置３００の各部を制御するための各種コントローラなどを備える。   The substrate processing apparatus 300 controls the operation of the entire substrate processing apparatus, including control of the transfer robots 370 and 380, the gate valves 333, 344, 354, 362, the pre-alignment processing chamber 336, the cleaning processing chamber 400, and the like. A control unit 500 is provided. The control unit 500 includes, for example, a CPU that constitutes the control unit main body, a ROM that stores data necessary for the CPU to perform processing, a RAM that includes a memory area used for various data processing performed by the CPU, a CPU, In addition to storage means such as a hard disk (HDD) or memory that stores programs and various data for controlling each part, various displays such as liquid crystal displays that display operation screens and selection screens, and input and editing of processes and recipes by operators Input / output means for inputting various data and outputting various data such as process / recipe and process / log output to a predetermined storage medium, various controllers for controlling each part of the substrate processing apparatus 300, etc. Prepare.

このような基板処理装置３００において，本実施形態にかかる基板受け渡し装置が適用される処理室について説明する。基板処理装置３００において搬送アームと載置台との間でウエハＷの受け渡しを行う処理室としては，プロセス処理室３４０Ａ〜３４０Ｆ，プリアライメント処理室３３６，洗浄処理室４００が設けられているので，これらすべての処理室に本実施形態にかかる基板受け渡し装置１３０を適用可能である。その他，図示はしないが，基板処理装置３００の搬送室３３０にウエハＷに対するプロセス処理の結果を測定する測定処理室（例えば膜厚測定処理室，パーティクル測定処理室など）を設けることができるので，その場合にはこの測定処理室にも上記の基板受け渡し装置１３０を適用することができる。本実施形態では，これらの処理室のうち洗浄処理室４００に基板受け渡し装置１３０を適用した場合について具体的な構成例を後述する。   In such a substrate processing apparatus 300, a processing chamber to which the substrate transfer apparatus according to the present embodiment is applied will be described. In the substrate processing apparatus 300, process chambers 340A to 340F, a pre-alignment processing chamber 336, and a cleaning processing chamber 400 are provided as processing chambers for transferring the wafer W between the transfer arm and the mounting table. The substrate transfer apparatus 130 according to the present embodiment can be applied to all processing chambers. In addition, although not shown, a measurement processing chamber (for example, a film thickness measurement processing chamber, a particle measurement processing chamber, etc.) for measuring the result of the process processing on the wafer W can be provided in the transfer chamber 330 of the substrate processing apparatus 300. In that case, the substrate transfer device 130 can be applied to the measurement processing chamber. In the present embodiment, a specific configuration example will be described later when the substrate transfer apparatus 130 is applied to the cleaning processing chamber 400 among these processing chambers.

（基板処理装置の動作）
次に，基板処理装置３００の動作について説明する。基板処理装置３００は制御部５００により所定のプログラムに基づいて稼働する。例えば搬送ロボット３７０によりカセット容器３３２Ａ〜３３２Ｃのいずれかから搬出されたウエハＷは，プリアライメント処理室３３６に搬入されて位置決め処理がなされる。位置決め処理されたウエハＷは，プリアライメント処理室３３６から搬出されてロードロック室３６０Ｍまたは３６０Ｎ内へ搬入される。このとき，必要なすべてのプロセス処理が完了したウエハＷがロードロック室３６０Ｍまたは３６０Ｎにあれば，そのウエハＷを搬出して未処理のウエハＷを搬入する。 (Operation of substrate processing equipment)
Next, the operation of the substrate processing apparatus 300 will be described. The substrate processing apparatus 300 is operated by the control unit 500 based on a predetermined program. For example, the wafer W unloaded from one of the cassette containers 332A to 332C by the transfer robot 370 is loaded into the pre-alignment processing chamber 336 and subjected to positioning processing. The positioned wafer W is unloaded from the pre-alignment processing chamber 336 and loaded into the load lock chamber 360M or 360N. At this time, if a wafer W for which all necessary process processing has been completed is in the load lock chamber 360M or 360N, the wafer W is unloaded and an unprocessed wafer W is loaded.

ロードロック室３６０Ｍまたは３６０Ｎへ搬入されたウエハＷは，搬送ロボット３８０によりロードロック室３６０Ｍまたは３６０Ｎから搬出され，プロセス処理室３４０Ａ〜３４０Ｆのうちの所定の処理室へ搬入されて所定のプロセス処理が実行される。例えばウエハＷがプロセス処理室に搬入されて下部電極を構成する載置台上に受け渡されると，例えば上部電極を構成するシャワーヘッドから所定のプロセス処理ガスを導入し，上記各電極に所定の高周波電力を印加して処理ガスをプラズマ化し，そのプラズマによりウエハＷ上にエッチング，成膜などの所定のプロセス処理を施す。そして，プロセス処理が完了したウエハＷは，搬送ロボット３８０によりプロセス処理室３４０から搬出され，処理が残っていれば次のプロセス処理室３４０へ搬送される。   The wafer W loaded into the load lock chamber 360M or 360N is unloaded from the load lock chamber 360M or 360N by the transfer robot 380, and loaded into a predetermined processing chamber of the process processing chambers 340A to 340F to perform predetermined process processing. Executed. For example, when the wafer W is loaded into the process chamber and transferred onto the mounting table constituting the lower electrode, for example, a predetermined process processing gas is introduced from a shower head constituting the upper electrode, and a predetermined high frequency is supplied to each electrode. Electric power is applied to turn the processing gas into plasma, and a predetermined process such as etching or film formation is performed on the wafer W by the plasma. Then, the wafer W that has undergone the process processing is unloaded from the process processing chamber 340 by the transfer robot 380, and is transferred to the next process processing chamber 340 if processing remains.

このように，ウエハＷに対して処理ガスのプラズマを用いたプロセス処理を施すと，載置台３４２上のウエハＷの周縁部の下側に回り込んで，不所望な付着物が付着することがある。例えば処理ガスとしてフロロカーボン系（ＣＦ系）ガスをプラズマ化してウエハＷの表面にプラズマエッチング処理を行う場合には，競争反応（重合反応）によってフロロカーボン系ポリマ（ＣＦ系ポリマ）からなる副生成物（デポ）が生成し，ウエハＷの端部（例えばベベル部を含む端部の裏面側）に付着する。   As described above, when the processing process using the plasma of the processing gas is performed on the wafer W, undesired deposits may adhere to the lower side of the peripheral edge of the wafer W on the mounting table 342. is there. For example, when a plasma etching process is performed on the surface of the wafer W by converting a fluorocarbon (CF) gas as a processing gas into a plasma, a byproduct (a CF product) formed of a fluorocarbon polymer (CF polymer) is generated by a competitive reaction (polymerization reaction). Deposition) is generated and adheres to the end portion of the wafer W (for example, the back side of the end portion including the bevel portion).

このような付着物が付着しているウエハＷが，例えばカセット容器３３２Ａ〜３３２Ｃのいずれかに戻されたときに，ウエハＷの端部がカセット容器内の保持部に接触して付着物が剥離し，そのウエハＷの下に収容される他のウエハＷの表面に落下する可能性がある。これが場合によってはウエハＷ上に形成される半導体デバイスの不具合の原因となる。したがって，このようなウエハＷの端部の付着物は洗浄により除去する必要がある。   For example, when the wafer W to which such a deposit is adhered is returned to one of the cassette containers 332A to 332C, the end of the wafer W comes into contact with the holding portion in the cassette container and the deposit is peeled off. Then, there is a possibility of dropping onto the surface of another wafer W accommodated under the wafer W. This may cause a malfunction of the semiconductor device formed on the wafer W in some cases. Therefore, it is necessary to remove such deposits on the edge of the wafer W by cleaning.

そこで，本実施形態にかかる基板処理装置３００では，各プロセス処理室３４０での処理が完了したウエハＷを，ロードロック室３６０Ｍまたは３６０Ｎを介して洗浄処理室４００へ搬送し，洗浄処理室４００でウエハＷの端部の洗浄処理を行った上で，元のカセット容器３３２Ａ〜３３２Ｃに戻すようにしている。この洗浄処理によってウエハＷの端部の付着物が除去されるため，そのようなウエハＷを例えばカセット容器３３２Ａに戻したときに，このウエハＷから付着物が落下することはなく，他のウエハＷの表面を清浄に保つことができる。   Therefore, in the substrate processing apparatus 300 according to the present embodiment, the wafer W that has been processed in each process processing chamber 340 is transferred to the cleaning processing chamber 400 via the load lock chamber 360M or 360N, and the cleaning processing chamber 400 After cleaning the edge of the wafer W, it is returned to the original cassette containers 332A to 332C. Since the adhering matter at the end of the wafer W is removed by this cleaning process, when such a wafer W is returned to, for example, the cassette container 332A, the adhering matter does not fall from the wafer W, and other wafers. The surface of W can be kept clean.

（洗浄処理室の構成例）
ここで，洗浄処理室４００の構成例について説明する。本実施形態にかかる洗浄処理室４００は，回転自在に設けられた載置台１１２上にウエハＷを載置してウエハＷを回転させながら，ウエハＷの端部に部分的に所定の光を照射して付着物を除去するように構成される。このため，ウエハＷの水平方向の位置ずれがないように正確に載置台１１２上に載置させる必要あるので，このような洗浄処理室４００に基板受け渡し装置１３０を適用する場合を例に挙げて説明する。 (Configuration example of cleaning chamber)
Here, a configuration example of the cleaning chamber 400 will be described. The cleaning processing chamber 400 according to this embodiment irradiates predetermined light partially on the end of the wafer W while placing the wafer W on the mounting table 112 rotatably provided and rotating the wafer W. And configured to remove deposits. For this reason, it is necessary to accurately place the wafer W on the mounting table 112 so that there is no positional deviation in the horizontal direction. explain.

洗浄処理室４００は，具体的には例えば図１２に示すように構成される。図１２に示すように，洗浄処理室４００は，容器４０２内に，載置台ユニット１１０，基板受け渡し装置１３０，基板位置検出ユニット１５０，および洗浄手段４１０を備えている。   Specifically, the cleaning processing chamber 400 is configured as shown in FIG. 12, for example. As shown in FIG. 12, the cleaning chamber 400 includes a mounting table unit 110, a substrate transfer device 130, a substrate position detection unit 150, and cleaning means 410 in a container 402.

洗浄手段４１０は，レーザユニット４１２とオゾン発生器４１４を備えている。レーザユニット４１２を構成するレーザ光源（図示せず）としては，例えば半導体レーザ，気体レーザ，固体レーザなど各種レーザを用いることができる。レーザユニット４１２の光軸は，載置台１１２に載置されているウエハＷの端部裏面に付着している付着物Ｐにレーザ光が照射されるように調整される。オゾン発生器４１４は，ウエハＷの端部裏面に付着している付着物Ｐを分解するための酸素系反応性ガスとしてオゾン（Ｏ３）を発生させ，これを載置台１１２に載置されているウエハＷの端部裏面に向けて吐出する。これらレーザユニット４１２とオゾン発生器４１４は，制御部２００によってその動作が制御される。なお，オゾン（Ｏ３）や付着物Ｐが分解されて生成された二酸化炭素（ＣＯ２）とフッ素（Ｆ２）を吸引排気する排気手段（図示せず）をオゾン発生器４１４に対向する位置に備えるようにしてもよい。 The cleaning means 410 includes a laser unit 412 and an ozone generator 414. As a laser light source (not shown) constituting the laser unit 412, various lasers such as a semiconductor laser, a gas laser, and a solid laser can be used. The optical axis of the laser unit 412 is adjusted so that the laser beam is applied to the deposit P attached to the rear surface of the end of the wafer W mounted on the mounting table 112. The ozone generator 414 generates ozone (O 3 ) as an oxygen-based reactive gas for decomposing the deposit P adhering to the rear surface of the end of the wafer W, and this is placed on the mounting table 112. Discharge toward the rear surface of the end of the wafer W being held. The operations of the laser unit 412 and the ozone generator 414 are controlled by the control unit 200. Note that an exhaust means (not shown) for sucking and exhausting carbon dioxide (CO 2 ) and fluorine (F 2 ) generated by decomposing ozone (O 3 ) and the deposit P is opposed to the ozone generator 414. You may make it prepare for.

次に，洗浄処理室４００で実行されるウエハＷの洗浄処理について説明する。この洗浄処理室４００には，上記の基板受け渡し装置１３０および基板位置検出ユニット１５０が備えられているため，搬送ロボット３７０の搬送アーム３７３によって搬入出口４０４を介して容器４０２内に搬入されたウエハＷを位置ずれなく載置台１１２のウエハ載置面に載置することができる。また，もし搬送ロボット３７０から支持ピン１３２Ａ〜１３２ＣにウエハＷが渡されたときにウエハＷに位置ずれがあっても，搬送ロボット３７０を用いることなく，支持ピン１３２Ａ〜１３２Ｃを水平移動させてこの位置ずれを補正することができるので，搬送ロボット３７０は他のウエハＷの搬送処理を行うことができる。   Next, the cleaning process of the wafer W performed in the cleaning process chamber 400 will be described. Since the cleaning chamber 400 includes the substrate transfer device 130 and the substrate position detection unit 150, the wafer W loaded into the container 402 via the loading / unloading port 404 by the transfer arm 373 of the transfer robot 370. Can be mounted on the wafer mounting surface of the mounting table 112 without displacement. Further, even if the wafer W is displaced when the wafer W is transferred from the transfer robot 370 to the support pins 132A to 132C, the support pins 132A to 132C are moved horizontally without using the transfer robot 370. Since the positional deviation can be corrected, the transfer robot 370 can perform transfer processing of another wafer W.

次に，洗浄手段４１０を用いてウエハＷの端部裏面の洗浄処理を行う。例えばウエハＷの端部に付着物として例えばＣＦ系ポリマＰが付着している場合，ＣＦ系ポリマＰに酸素系反応性ガスを接触させつつ，光を照射して分解反応を起こさせると，これを除去することができる。なお，以下のように光とガスの種類を使い分けることができる。   Next, a cleaning process is performed on the back surface of the edge of the wafer W using the cleaning unit 410. For example, when a CF polymer P adheres to the edge of the wafer W as an adhering substance, for example, if a decomposition reaction is caused by irradiating light while contacting an oxygen reactive gas with the CF polymer P, Can be removed. Note that the types of light and gas can be used properly as follows.

例えば，ウエハＷの端部を例えば所定の温度（例えば２００℃程度）に加熱しつつ，ＣＦ系ポリマＰに紫外線を照射するとともに，ＣＦ系ポリマＰの表面付近に酸素系反応ガス（例えば酸素（Ｏ２））の流れを形成する方法がある。これによって，ＣＦ系ポリマＰが二酸化炭素（ＣＯ２）とフッ素（Ｆ２）に分解され除去される。 For example, while the end portion of the wafer W is heated to, for example, a predetermined temperature (for example, about 200 ° C.), the CF polymer P is irradiated with ultraviolet rays, and an oxygen-based reaction gas (for example, oxygen (for example, oxygen ( There is a method of forming a flow of O 2 )). As a result, the CF polymer P is decomposed into carbon dioxide (CO 2 ) and fluorine (F 2 ) and removed.

この他，ＣＦ系ポリマＰに酸素系反応性ガスとしてオゾン（Ｏ３）を接触させつつ，ＣＦ系ポリマＰにレーザ光を照射する方法を採用するようにしてもよい。この方法によれば，ＣＦ系ポリマＰに対して局所的に高いエネルギーが供給されるため，分解反応が促進され，効率よくＣＦ系ポリマＰを除去することができる。 In addition, a method of irradiating the CF polymer P with laser light while contacting the CF polymer P with ozone (O 3 ) as an oxygen-based reactive gas may be employed. According to this method, since high energy is locally supplied to the CF polymer P, the decomposition reaction is promoted, and the CF polymer P can be efficiently removed.

これらの方法を採用すれば，ウエハＷの端部を研磨することなく，ウエハＷの端部に付着する付着物Ｐを除去することができるため，研磨によって生じる粉塵の処理に手間を省くことができるとともに，そのような粉塵による汚染の問題もない。また，プラズマを発生させることなくウエハＷの端部に付着する付着物Ｐを除去することができるため，ウエハＷの表面に形成される膜（例えばＬｏｗ−Ｋ膜）がダメージを受けることもない。本実施形態では，洗浄処理室４００においてレーザ光を用いた洗浄処理が行われる。   By adopting these methods, it is possible to remove the deposits P adhering to the end of the wafer W without polishing the end of the wafer W, so that it is possible to save time and effort in processing dust generated by the polishing. And there is no problem of such contamination by dust. Further, since the deposit P adhering to the edge of the wafer W can be removed without generating plasma, the film (for example, Low-K film) formed on the surface of the wafer W is not damaged. . In the present embodiment, cleaning processing using laser light is performed in the cleaning processing chamber 400.

具体的には，ウエハＷを載置した状態で載置台１１２を回転させ，ウエハＷの端部裏面に向けてレーザユニット４１２からレーザ光を出射するとともに，オゾン発生器４１４からオゾン（Ｏ３）を吐出する。これによって，ウエハＷの端部裏面に付着物Ｐが付着していても，その付着物Ｐを化学分解して除去することができる。なお，付着物Ｐの付着面積がレーザ光のスポット径に対して広い場合には，例えばレーザ光のスポット位置がウエハＷの径方向に移動するようにレーザユニット４１２を構成することが好ましい。このようにすれば，広い面積に付着した付着物Ｐを完全に除去することができる。 Specifically, the mounting table 112 is rotated with the wafer W mounted thereon, and laser light is emitted from the laser unit 412 toward the rear surface of the end of the wafer W, and ozone (O 3 ) is emitted from the ozone generator 414. Is discharged. As a result, even if the deposit P adheres to the rear surface of the end portion of the wafer W, the deposit P can be chemically decomposed and removed. Note that when the adhesion area of the deposit P is larger than the spot diameter of the laser beam, the laser unit 412 is preferably configured so that the spot position of the laser beam moves in the radial direction of the wafer W, for example. In this way, the deposit P attached to a large area can be completely removed.

洗浄処理が完了したウエハＷは，再び支持ピン１３２Ａ〜１３２Ｃによって鉛直方向に持ち上げられ，容器４０２の搬入出口４０４から進入してくる搬送ロボット３７０に渡される。搬送ロボット３７０は，洗浄処理済みのウエハＷを，搬送室３３０を経由して元のカセット容器３３２Ａ〜３３２Ｃに戻す。この洗浄処理済みのウエハＷから付着物Ｐが落下することはなく，このため他のウエハＷの表面を清浄に保つことができる。   The wafer W that has been subjected to the cleaning process is again lifted in the vertical direction by the support pins 132A to 132C and transferred to the transfer robot 370 that enters from the loading / unloading port 404 of the container 402. The transfer robot 370 returns the cleaned wafer W to the original cassette containers 332A to 332C via the transfer chamber 330. The deposit P does not fall from the cleaned wafer W, so that the surface of another wafer W can be kept clean.

ところで，載置台１１２に載置されているウエハＷの中心と載置台１１２の回転中心がずれた状態のままウエハＷを回転させると，ウエハＷは偏心した状態で回転することになる。レーザ光を用いてウエハＷの端部裏面に付着物Ｐを除去する洗浄処理室４００の場合，ウエハＷが偏心していると，レーザ光のスポット径が狭いこともあって，付着物Ｐを完全に除去できない可能性もある。この点，洗浄処理室４００に備えられた基板受け渡し装置１３０によれば，高い精度（例えば，数μｍ以下の精度）でウエハＷの位置決めを行うことができる。したがって，洗浄処理を正確に行うことができる。   By the way, if the wafer W is rotated while the center of the wafer W mounted on the mounting table 112 is shifted from the center of rotation of the mounting table 112, the wafer W rotates in an eccentric state. In the case of the cleaning processing chamber 400 in which the deposit P is removed from the rear surface of the end portion of the wafer W using laser light, if the wafer W is decentered, the spot diameter of the laser beam may be narrow, so that the deposit P is completely removed. May not be removed. In this regard, according to the substrate transfer device 130 provided in the cleaning processing chamber 400, the wafer W can be positioned with high accuracy (for example, accuracy of several μm or less). Therefore, the cleaning process can be performed accurately.

また，基板処理装置３００において，カセット容器３３２Ａ〜３３２Ｃから取り出されたウエハＷは，プリアライメント処理室３３６，プロセス処理室３４０Ａ〜３４０Ｆなどを巡回して所定の処理が施された後に，洗浄処理室４００や測定処理室などの後処理室に搬入される。このため，後処理室に搬入されるウエハＷは，複数の処理室によって搬送アームによる搬出入が繰り返されているので，ウエハＷの位置ずれが大きくなっている蓋然性が高い。この点，本実施形態にかかる基板受け渡し装置１３０によれば，ウエハＷの位置ずれが大きい場合であっても，従来のようにウエハＷを取り出して入れ直したり，また載置台に置き直したりすることなく，支持ピン１３２Ａ〜１３２ＣでウエハＷを支持したまま水平方向に駆動することによってその位置ずれを素早く正確に補正することができる。従って，このような後処理室に基板受け渡し装置１３０を適用する効果は大きい。   Further, in the substrate processing apparatus 300, the wafer W taken out from the cassette containers 332A to 332C is circulated through the pre-alignment processing chamber 336, the process processing chambers 340A to 340F, etc., and then subjected to a predetermined processing, and then the cleaning processing chamber. 400 and a post-processing chamber such as a measurement processing chamber. For this reason, since the wafer W carried into the post-processing chamber is repeatedly loaded and unloaded by the transfer arm by the plurality of processing chambers, there is a high probability that the positional deviation of the wafer W is large. In this regard, according to the substrate transfer apparatus 130 according to the present embodiment, even when the positional deviation of the wafer W is large, the wafer W can be taken out and reinserted as in the prior art, or placed on the mounting table. In addition, the positional deviation can be corrected quickly and accurately by driving in the horizontal direction while supporting the wafer W with the support pins 132A to 132C. Therefore, the effect of applying the substrate transfer apparatus 130 to such a post-processing chamber is great.

以上，添付図面を参照しながら本発明の好適な実施形態について説明したが，本発明は係る例に限定されないことは言うまでもない。当業者であれば，特許請求の範囲に記載された範疇内において，各種の変更例または修正例に想到し得ることは明らかであり，それらについても当然に本発明の技術的範囲に属するものと了解される。   As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are naturally within the technical scope of the present invention. Understood.

本発明は，基板受け渡し装置，基板処理装置，基板受け渡し方法に適用可能である。   The present invention is applicable to a substrate transfer apparatus, a substrate processing apparatus, and a substrate transfer method.

本発明の実施形態にかかる基板受け渡し装置，基板位置検出ユニット，及び載置台ユニットを説明するための斜視図である。It is a perspective view for demonstrating the board | substrate delivery apparatus concerning the embodiment of this invention, a board | substrate position detection unit, and a mounting base unit. 図１に示す各装置の側面を示す図である。It is a figure which shows the side surface of each apparatus shown in FIG. 図１に示す基板受け渡し装置の構成を示す斜視図である。It is a perspective view which shows the structure of the board | substrate delivery apparatus shown in FIG. 同実施形態にかかる基板位置検出ユニットが備える基板位置検出手段の構成を説明するための斜視図である。It is a perspective view for demonstrating the structure of the board | substrate position detection means with which the board | substrate position detection unit concerning the embodiment is provided. 各測定視野の状態とウエハＷの位置との関係を説明するための図であって，測定視野のすべてが白状態（明状態）と判定された場合の例である。It is a figure for demonstrating the relationship between the state of each measurement visual field, and the position of the wafer W, Comprising: It is an example when all the measurement visual fields are determined to be a white state (bright state). 図５Ａの位置ずれを補正したときの支持ピンとウエハの位置関係を示す図である。It is a figure which shows the positional relationship of a support pin and a wafer when the position shift of FIG. 5A is correct | amended. 各測定視野の状態とウエハＷの位置との関係を説明するための図であって，測定視野の１つが（グレー状態）と判定され，その他が白状態（明状態）と判定された場合の例である。It is a figure for demonstrating the relationship between the state of each measurement visual field, and the position of the wafer W, Comprising: When one of the measurement visual fields is determined to be (gray state) and the other is determined to be white state (bright state) It is an example. 図６Ａの位置ずれを補正したときの支持ピンとウエハの位置関係を示す図である。It is a figure which shows the positional relationship of a support pin and a wafer when the position shift of FIG. 6A is correct | amended. 各測定視野の状態とウエハＷの位置との関係を説明するための図であって，測定視野の１つが（グレー状態）と判定され，その他がそれぞれ黒状態（暗状態）と白状態（明状態）と判定された場合の例である。It is a figure for demonstrating the relationship between the state of each measurement visual field, and the position of the wafer W, Comprising: One of the measurement visual fields is determined to be (gray state), and others are black state (dark state) and white state (bright), respectively. It is an example when it is determined as (state). 図７Ａの位置ずれを補正したときの支持ピンとウエハの位置関係を示す図である。It is a figure which shows the positional relationship of a support pin and a wafer when the position shift of FIG. 7A is correct | amended. 同実施形態にかかるウエハの受け渡し処理の具体例を示すフローチャートである。4 is a flowchart showing a specific example of a wafer delivery process according to the embodiment. 基板受け渡し装置の動作例を説明するための図である。It is a figure for demonstrating the operation example of a board | substrate delivery apparatus. 基板受け渡し装置の動作例を説明するための図である。It is a figure for demonstrating the operation example of a board | substrate delivery apparatus. 基板受け渡し装置の動作例を説明するための図である。It is a figure for demonstrating the operation example of a board | substrate delivery apparatus. 基板受け渡し装置の動作例を説明するための図である。It is a figure for demonstrating the operation example of a board | substrate delivery apparatus. 基板受け渡し装置の動作例を説明するための図である。It is a figure for demonstrating the operation example of a board | substrate delivery apparatus. 同実施形態にかかる基板受け渡し装置の他の構成例を示す斜視図である。It is a perspective view which shows the other structural example of the board | substrate delivery apparatus concerning the embodiment. 同実施形態にかかる基板受け渡し装置を適用可能な基板処理装置の構成例を示す断面図である。It is sectional drawing which shows the structural example of the substrate processing apparatus which can apply the substrate delivery apparatus concerning the embodiment. 本実施形態にかかる基板受け渡し装置を適用した洗浄処理室の内部構成例を示す側面図である。It is a side view which shows the example of an internal structure of the cleaning process chamber to which the substrate delivery apparatus concerning this embodiment is applied.

符号の説明Explanation of symbols

１１０ 載置台ユニット
１１２ 載置台
１１３Ａ〜１１３Ｃ 貫通孔
１１４ 支持軸
１１６ 載置台
１３０ 基板受け渡し装置
１３２Ａ〜１３２Ｃ 支持ピン
１３４ 基台
１３５ 取付板
１３６ 支持板
１３８ 支持ピン駆動機構
１３８Ｘ Ｘ方向駆動手段
１３８Ｙ Ｙ方向駆動手段
１３８Ｚ Ｚ方向駆動手段
１５０ 基板位置検出ユニット
１５２Ａ〜１５２Ｃ 撮像手段
１５３Ａ〜１５３Ｃ 測定視野
１５４Ａ〜１５４Ｃ 照明用光源
１５６ 取付台
１５７，１５８ ブラケット
２００ 制御部
３００ 基板処理装置
３１０ プロセス処理ユニット
３２０ 搬送ユニット
３３０ 搬送室
３３１Ａ〜３３１Ｃ カセット台
３３２Ａ〜３３２Ｃ カセット容器
３３３Ａ〜３３３Ｃ ゲートバルブ
３３６ プリアライメント処理室
３３８ 載置台
３３９ 光学センサ
３４０Ａ〜３４０Ｆ プロセス処理室
３４２ 載置台
３４４Ａ〜３４４Ｆ ゲートバルブ
３５０ 共通搬送室
３５４Ｍ，３５４Ｎ ゲートバルブ
３６０Ｍ，３６０Ｎ ロードロック室
３６２Ｍ，３６２Ｎ ゲートバルブ
３６４Ｍ，３６４Ｎ 受渡台
３７０，３８０ 搬送ロボット
３７３Ａ，３７３Ｂ 搬送アーム
３８３Ａ，３８３Ｂ 搬送アーム
３８４ 案内レール
４００ 洗浄処理室
４０２ 容器
４０４ 搬入出口
４１０ 洗浄手段
４１２ レーザユニット
４１４ オゾン発生器
５００ 制御部
Ｗ ウエハ 110 mounting table unit 112 mounting table 113A to 113C through hole 114 support shaft 116 mounting table 130 substrate transfer device 132A to 132C support pin 134 base 135 mounting plate 136 support plate 138 support pin drive mechanism 138X X direction drive means 138Y Y direction drive Means 138Z Z direction driving means 150 Substrate position detection units 152A to 152C Imaging means 153A to 153C Measurement visual fields 154A to 154C Illumination light source 156 Mounting base 157, 158 Bracket 200 Control unit 300 Substrate processing apparatus 310 Process processing unit 320 Transport unit 330 Transport Chamber 331A-331C Cassette base 332A-332C Cassette container 333A-333C Gate valve 336 Pre-alignment processing chamber 338 Mounting base 339 Optical sensor 340A-340F Processing chamber 342 Mounting table 344A to 344F Gate valve 350 Common transfer chamber 354M, 354N Gate valve 360M, 360N Load lock chamber 362M, 362N Gate valve 364M, 364N Transfer table 370, 380 Transfer robot 373A, 373B Transfer arm 383A, 383B Transfer Arm 384 Guide rail 400 Cleaning process chamber 402 Container 404 Loading / unloading port 410 Cleaning means 412 Laser unit 414 Ozone generator 500 Control unit W Wafer

Claims (14)

基板を搬送する搬送アームと前記基板を載置する載置台との間で基板の受け渡しを行う基板受け渡し装置であって，
前記載置台の支持軸周りに離間して配設され，前記基板をその下面で支持する複数の支持ピンと，
前記支持ピンが取り付けられる基台と，
前記支持ピンを前記基台を介して上下駆動させて，前記基板の上げ下ろしを行う上下駆動手段と，
前記支持ピンを前記基台を介して水平駆動させて，前記基板の水平方向の位置を調整する水平駆動手段と，
を備えることを特徴とする基板受け渡し装置。 A substrate transfer device for transferring a substrate between a transfer arm for transferring a substrate and a mounting table for mounting the substrate,
A plurality of support pins disposed around the support shaft of the mounting table and supported by the lower surface thereof;
A base to which the support pins are attached;
Vertical driving means for driving the support pin up and down through the base to raise and lower the substrate;
Horizontal driving means for adjusting the horizontal position of the substrate by horizontally driving the support pins through the base;
A substrate delivery apparatus comprising: 前記載置台の近傍に，前記支持ピンで支持した前記基板の水平方向の位置を検出する基板位置検出手段を配設したことを特徴とする請求項１に記載の基板受け渡し装置。 2. The substrate transfer apparatus according to claim 1, wherein a substrate position detecting means for detecting a horizontal position of the substrate supported by the support pins is disposed in the vicinity of the mounting table. 前記基板は，円板状の半導体ウエハであり，
前記基板位置検出手段は，前記基板の周縁部の少なくとも２箇所以上の位置を検出することを特徴とする請求項２に記載の基板受け渡し装置。 The substrate is a disk-shaped semiconductor wafer;
3. The substrate delivery apparatus according to claim 2, wherein the substrate position detecting means detects at least two positions on the peripheral edge of the substrate. 前記上下駆動手段により前記支持ピンを上昇させて前記搬送アームから前記基板を受け取ると，前記支持ピンで前記基板を支持した状態で，前記基板位置検出手段により前記基板の水平方向の位置を検出して，前記基板が位置ずれしていれば前記水平駆動手段により前記支持ピンを水平方向に駆動させて前記基板の位置ずれを補正した上で，前記上下駆動手段により前記支持ピンを下降させて前記基板を前記載置台上に載置させる受け渡し処理を行う制御部を設けたことを特徴とする請求項２に記載の基板受け渡し装置。 When the substrate is received from the transfer arm by raising the support pin by the vertical drive means, the horizontal position of the substrate is detected by the substrate position detection means while the substrate is supported by the support pin. If the substrate is misaligned, the horizontal driving means drives the support pins in the horizontal direction to correct the substrate misalignment, and the vertical driving means lowers the support pins to move the support pins. The substrate transfer apparatus according to claim 2, further comprising a control unit that performs a transfer process for placing the substrate on the mounting table. 前記搬送アームから前記基板を受け取る際，前記支持ピンを上昇させた状態で，前記搬送アームを下降させて前記基板を受け取ることを特徴とする請求項４に記載の基板受け渡し装置。 5. The substrate transfer apparatus according to claim 4, wherein when receiving the substrate from the transfer arm, the transfer arm is lowered to receive the substrate with the support pins raised. 前記複数の支持ピンを前記載置台の支持軸周りに前記載置台の径よりも内側に離間して配設し，前記載置台に形成された貫通孔を通して前記載置台の基板載置面から前記各支持ピンの先端が突没可能にしたことを特徴とする請求項１に記載の基板受け渡し装置。 The plurality of support pins are arranged around the support axis of the mounting table and spaced apart from the diameter of the mounting table, and the substrate pins from the mounting table through the through holes formed in the mounting table. The substrate transfer apparatus according to claim 1, wherein the tip of each support pin can protrude and retract. 前記載置台は，前記支持軸周りに回転自在に構成し，
前記載置台を回転させるときには，前記支持ピンの先端が前記載置台の底面よりも下側になるように前記支持ピンを下降させることを特徴とする請求項６に記載の基板受け渡し装置。 The mounting table is configured to be rotatable around the support shaft,
7. The substrate transfer apparatus according to claim 6, wherein when the mounting table is rotated, the supporting pins are lowered so that the tip of the supporting pin is located below the bottom surface of the mounting table. 前記複数の支持ピンを前記載置台の支持軸周りに前記載置台の径よりも外側に離間して配設したことを特徴とする請求項１に記載の基板受け渡し装置。 2. The substrate transfer apparatus according to claim 1, wherein the plurality of support pins are arranged around a support axis of the mounting table and spaced apart from the diameter of the mounting table. 処理室内に配設された載置台上に基板を載置して所定の処理を行う基板処理装置であって，
前記処理室内に前記基板を搬出入する搬送アームと前記載置台との間で基板の受け渡しを行う基板受け渡し装置を前記載置台近傍に配置し，
前記基板受け渡し装置は，前記載置台の支持軸周りに離間して配設され，前記基板をその下面で支持する複数の支持ピンと，前記支持ピンが取り付けられる基台と，前記支持ピンを前記基台を介して上下駆動させて，前記基板の上げ下ろしを行う上下駆動手段と，前記支持ピンを前記基台を介して水平駆動させて，前記基板の水平方向の位置を調整する水平駆動手段と，
を備えることを特徴とする基板処理装置。 A substrate processing apparatus for performing predetermined processing by placing a substrate on a mounting table disposed in a processing chamber,
A substrate transfer device for transferring the substrate between the transfer arm for transferring the substrate into and out of the processing chamber and the mounting table, is disposed in the vicinity of the mounting table;
The substrate transfer device is spaced apart around the support shaft of the mounting table, and includes a plurality of support pins that support the substrate on its lower surface, a base to which the support pins are attached, and the support pins. Vertical drive means for raising and lowering the substrate by driving up and down through a table; horizontal drive means for adjusting the horizontal position of the substrate by horizontally driving the support pins through the base;
A substrate processing apparatus comprising: 基板に所定の処理を施す複数の処理室を備え，前記基板を搬送アームで各処理室を順番に搬送しながら基板に連続して処理を行う基板処理装置であって，
前記処理室の少なくとも１つは，他の処理室でプロセス処理を行った基板を搬送して後処理を行う後処理室とし，
前記後処理室は，その内部に設けられた載置台と前記搬送アームとの間で基板の受け渡しを行う基板受け渡し装置を備え，
前記基板受け渡し装置は，前記基板をその下面で支持する複数の支持ピンと，前記支持ピンが取り付けられる基台と，前記支持ピンを前記基台を介して上下駆動させて，前記基板の上げ下ろしを行う上下駆動手段と，前記支持ピンを前記基台を介して水平駆動させて，前記基板の水平方向の位置を調整する水平駆動手段とを備えることを特徴とする基板処理装置。 A substrate processing apparatus comprising a plurality of processing chambers for performing predetermined processing on a substrate, and performing processing on the substrate continuously while transporting the substrate sequentially through each processing chamber by a transport arm,
At least one of the processing chambers is a post-processing chamber for carrying out post-processing by transporting a substrate that has been processed in another processing chamber,
The post-processing chamber includes a substrate transfer device that transfers a substrate between a mounting table provided in the chamber and the transfer arm,
The substrate transfer device raises and lowers the substrate by driving a plurality of support pins for supporting the substrate on a lower surface thereof, a base to which the support pins are attached, and driving the support pins up and down via the base. A substrate processing apparatus comprising: vertical drive means; and horizontal drive means for adjusting the horizontal position of the substrate by horizontally driving the support pins through the base. 前記後処理室は，前記基板の周縁部に付着した付着物を除去する洗浄処理室であり，
前記基板受け渡し装置の複数の支持ピンを，前記載置台の支持軸周りに前記載置台の径よりも内側に離間して配設し，前記載置台に形成された貫通孔を通して前記載置台の基板載置面から前記支持ピンの先端が突没可能にしたことを特徴とする請求項１０に記載の基板処理装置。 The post-processing chamber is a cleaning processing chamber for removing deposits attached to the peripheral edge of the substrate,
A plurality of support pins of the substrate delivery device are arranged around the support shaft of the mounting table, spaced apart from the diameter of the mounting table, and through the through holes formed in the mounting table, the substrate of the mounting table The substrate processing apparatus according to claim 10, wherein a tip end of the support pin can protrude from a mounting surface. 基板を搬送する搬送アームと前記基板を載置する載置台との間で基板の受け渡しを行う基板受け渡し装置による受け渡し方法であって，
前記基板受け渡し装置は，前記載置台の支持軸周りに離間して配設され，前記基板をその下面で支持する複数の支持ピンと，前記支持ピンが取り付けられる基台と，前記支持ピンを前記基台を介して上下駆動させる上下駆動手段と，前記支持ピンを前記基台を介して水平駆動させる水平駆動手段と，前記基板の水平方向の位置を検出する基板位置検出手段とを備え，
前記上下駆動手段により前記支持ピンを上昇させて，前記搬送アームから前記基板を受け取る工程と，
受け取った前記基板を前記支持ピンで支持したまま，前記基板位置検出手段により基板の位置を検出する工程と，
前記基板位置検出手段により検出された基板の位置に基づいて，その基板が所定の基準位置から位置ずれしているか否かを判断する工程と，
前記判断工程において前記基板が位置ずれしていないと判断した場合は，前記上下駆動手段により前記支持ピンを下降させて前記載置台上に載置させる工程と，
前記判断工程において前記基板が位置ずれしていると判断した場合は，前記支持ピンを前記水平駆動手段により水平方向に駆動させて前記基板の位置ずれを補正した上で，前記上下駆動手段により前記支持ピンを下降させて前記載置台上に載置させる工程と，
を有することを特徴とする基板受け渡し方法。 A transfer method by a substrate transfer device for transferring a substrate between a transfer arm for transferring a substrate and a mounting table for mounting the substrate,
The substrate transfer device is spaced apart around the support shaft of the mounting table, and includes a plurality of support pins that support the substrate on its lower surface, a base to which the support pins are attached, and the support pins. Vertical driving means for driving up and down through a base, horizontal driving means for horizontally driving the support pin through the base, and substrate position detecting means for detecting the horizontal position of the substrate,
Receiving the substrate from the transfer arm by raising the support pin by the vertical drive means;
Detecting the position of the substrate by the substrate position detecting means while the received substrate is supported by the support pins;
Determining whether the substrate is displaced from a predetermined reference position based on the position of the substrate detected by the substrate position detecting means;
If it is determined in the determining step that the substrate is not displaced, the step of lowering the support pin by the vertical drive means and placing it on the mounting table;
If it is determined in the determination step that the substrate is displaced, the support pins are driven in the horizontal direction by the horizontal drive means to correct the displacement of the substrate, and then the vertical drive means Lowering the support pins and placing them on the mounting table,
A substrate delivery method characterized by comprising: 前記搬送アームから前記基板を受け取る工程では，前記支持ピンを上昇させた状態で，前記搬送アームを下降させて前記基板を受け取ることを特徴とする請求項１２に記載の基板受け渡し方法。 13. The substrate transfer method according to claim 12, wherein in the step of receiving the substrate from the transfer arm, the transfer arm is lowered to receive the substrate while the support pins are raised. 前記基板の位置を検出する工程は，前記基板位置検出手段で基板を検出できない場合には，前記支持ピンを水平方向に駆動させることによって，前記基板を前記基板位置検出手段で検出できるまで移動させることを特徴とする請求項１２に記載の基板受け渡し方法。
In the step of detecting the position of the substrate, if the substrate position cannot be detected by the substrate position detecting unit, the substrate is moved until it can be detected by the substrate position detecting unit by driving the support pins in the horizontal direction. The substrate delivery method according to claim 12, wherein:
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JP7357549B2 (en) 2020-01-07 2023-10-06 東京エレクトロン株式会社 Substrate displacement detection method, substrate position abnormality determination method, substrate transfer control method, and substrate displacement detection device
WO2024135175A1 (en) * 2022-12-23 2024-06-27 住友重機械イオンテクノロジー株式会社 Wafer processing device, wafer processing method, and ion injection device

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