TWI388122B - 形成複合材料電路板結構的方法 - Google Patents
形成複合材料電路板結構的方法 Download PDFInfo
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- TWI388122B TWI388122B TW098113029A TW98113029A TWI388122B TW I388122 B TWI388122 B TW I388122B TW 098113029 A TW098113029 A TW 098113029A TW 98113029 A TW98113029 A TW 98113029A TW I388122 B TWI388122 B TW I388122B
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- Prior art keywords
- circuit board
- forming
- board structure
- composite circuit
- composite
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- 239000002131 composite material Substances 0.000 title claims description 105
- 238000000034 method Methods 0.000 title claims description 73
- 239000000758 substrate Substances 0.000 claims description 38
- 239000003054 catalyst Substances 0.000 claims description 31
- 239000002245 particle Substances 0.000 claims description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 229910052802 copper Inorganic materials 0.000 claims description 22
- 239000010949 copper Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- -1 poly醯imine Chemical compound 0.000 claims description 14
- 239000003989 dielectric material Substances 0.000 claims description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 229920000728 polyester Polymers 0.000 claims description 7
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- 229920000089 Cyclic olefin copolymer Polymers 0.000 claims description 4
- 239000004713 Cyclic olefin copolymer Substances 0.000 claims description 4
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 4
- 230000003213 activating effect Effects 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 125000000524 functional group Chemical group 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 4
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 239000002861 polymer material Substances 0.000 claims description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 4
- 239000002195 soluble material Substances 0.000 claims description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229920002292 Nylon 6 Polymers 0.000 claims description 3
- 239000004698 Polyethylene Substances 0.000 claims description 3
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 3
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 claims description 3
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 3
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000013522 chelant Substances 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 150000004696 coordination complex Chemical class 0.000 claims description 3
- 229920002313 fluoropolymer Polymers 0.000 claims description 3
- 239000004811 fluoropolymer Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 239000010955 niobium Substances 0.000 claims description 3
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920005668 polycarbonate resin Polymers 0.000 claims description 3
- 239000004431 polycarbonate resin Substances 0.000 claims description 3
- 229920000573 polyethylene Polymers 0.000 claims description 3
- 229920002098 polyfluorene Polymers 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 229920006380 polyphenylene oxide Polymers 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-N cyanic acid Chemical compound OC#N XLJMAIOERFSOGZ-UHFFFAOYSA-N 0.000 claims 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims 4
- 229920000106 Liquid crystal polymer Polymers 0.000 claims 2
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims 2
- 229930040373 Paraformaldehyde Natural products 0.000 claims 2
- 239000004952 Polyamide Substances 0.000 claims 2
- 150000001252 acrylic acid derivatives Chemical class 0.000 claims 2
- 150000002148 esters Chemical class 0.000 claims 2
- 229920002647 polyamide Polymers 0.000 claims 2
- 229920006324 polyoxymethylene Polymers 0.000 claims 2
- VZXTWGWHSMCWGA-UHFFFAOYSA-N 1,3,5-triazine-2,4-diamine Chemical compound NC1=NC=NC(N)=N1 VZXTWGWHSMCWGA-UHFFFAOYSA-N 0.000 claims 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims 1
- 239000010410 layer Substances 0.000 description 106
- 239000004020 conductor Substances 0.000 description 22
- 238000007772 electroless plating Methods 0.000 description 12
- 238000007747 plating Methods 0.000 description 10
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 238000000608 laser ablation Methods 0.000 description 5
- 238000001311 chemical methods and process Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229920001477 hydrophilic polymer Polymers 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000000053 physical method Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920000768 polyamine Polymers 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 125000000542 sulfonic acid group Chemical group 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/107—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by filling grooves in the support with conductive material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/184—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method using masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/036—Multilayers with layers of different types
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0236—Plating catalyst as filler in insulating material
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0242—Shape of an individual particle
- H05K2201/0257—Nanoparticles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0264—Peeling insulating layer, e.g. foil, or separating mask
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/30—Details of processes not otherwise provided for in H05K2203/01 - H05K2203/17
- H05K2203/308—Sacrificial means, e.g. for temporarily filling a space for making a via or a cavity or for making rigid-flexible PCBs
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/181—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
- H05K3/182—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
- H05K3/185—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method by making a catalytic pattern by photo-imaging
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Wiring (AREA)
Description
本發明係關於一種形成複合材料電路板結構的方法。特定言之,本發明係關於一種包含觸媒顆粒之複合材料,用以協助形成一電路板結構。
電路板是電子裝置中的一種重要的元件。為了追求更薄的成品厚度、因應細線路的需求、突破蝕刻與信賴性的缺點,嵌入式線路結構已逐漸興起。由於嵌入式線路結構係將線路圖案埋入基材中,因此有助於減少封裝成品的厚度。
就目前的技術而言,已知有數種方法以形成此等電路板。其中一種方法是使用雷射將基材圖案化,來定義一鑲嵌形式的結構,再使用一導電材料來填滿形成在基材上的凹穴,以完成一埋入式線路結構。
一般說來,基材的表面要先經過活化,才能使得導電材料成功地填滿在基材上的凹穴,通常是使用無電電鍍的技術。就當前的技術方案而言,其製作方式是直接線路設計。例如前述使用雷射將基材圖案化,來定義一鑲嵌形式的結構,再使用一導電材料來填滿形成在基材上的凹穴,以完成一嵌入式線路結構。
請參考第1圖,例示現有無電電鍍技術造成電鍍滿溢(over-plating)的現象。若是使用無電電鍍的技術將導電材料130,例如銅,填入基材101中預先形成凹穴122的過程中,首先,很容易造成電鍍滿溢(over-plating)的現象。電鍍滿溢一旦發生時,一方面,導電材料130會沿著凹穴開口的轉角處向四面八方延伸。由於當前技術都著重於細線路的開發,故同一線路層中的線距都被設計成儘可能的窄。沿著凹穴122開口向四面八方延伸的導電材料130顯著地增加了相鄰導線間短路的機會,還會使得藥液生產管控不易。另一方面,原本應該填入基材101凹穴122中的導電材料130也可能會附著在基材101的表面,形成表面污染,結果就導致了產品的良率不佳。其中任何一種結果都是本領域之技藝人士所不樂見的。因此,以上之缺點實在有待克服。
本發明於是提出一種形成複合材料電路板結構的方法。本發明形成複合材料電路板結構的方法,具有選擇性無電電鍍沉積的特性,從而降低電鍍滿溢的發生,於是得以避免導電材料沿著凹穴的開口向四面八方延伸的問題。另外,由於選擇性無電電鍍沉積的特性,原本應該填入基材凹穴中的導電材料就幾乎不會附著在基材的表面,從而減少導電材料沉積在基材表面不正確的區域的機會與降低導線間短路的風險。
本發明首先提出一種形成複合材料電路板結構的方法。首先,提供一複合材料結構。此複合材料結構包含一基材與位於基材上之一複合材料介電層。此複合材料介電層則包含接觸基材之一觸媒介電層,以及接觸觸媒介電層之一犧牲層。犧牲層不溶於水。然後,圖案化複合材料介電層同時活化觸媒顆粒。接下來,形成位於經活化觸媒顆粒上之一導線層。繼續,移除犧牲層。較佳者,導線層表面最高點與最低點之差距不大於3μm。
本發明其次提出一種形成複合材料電路板結構的方法。首先,提供一複合材料結構。此複合材料結構包含一基材與位於基材上之一複合材料介電層。此複合材料介電層則包含接觸基材之一觸媒介電層、接觸觸媒介電層之內犧牲層以及接觸內犧牲層之外犧牲層。內犧牲層不溶於水。然後,圖案化複合材料介電層同時活化觸媒顆粒。接下來,移除外犧牲層。其次,形成位於活化觸媒顆粒上之一導線層。繼續,移除內犧牲層。較佳者,導線層表面最高點與最低點之差距不大於3μm。
本發明提供一種形成複合材料電路板結構的方法。於本發明形成複合材料電路板結構方法中的複合材料,具有選擇性無電電鍍沉積的效果,所以可以降低複合材料在無電電鍍時電鍍滿溢的發生,與避免導電材料沿著凹穴的開口向四面八方延伸的問題。另外,原本應該填入基材凹穴中的導電材料亦不容易沉積在基材表面上其他不預期的區域,從而降低導線間短路的風險。
本發明於是提供一種形成複合材料電路板結構的方法。第2-7B圖例示形成本發明形成複合材料電路板結構方法之示意圖。如第2圖所示,本發明形成複合材料電路板結構的方法,首先提供一複合材料結構200。複合材料結構200包含一基材201以及一複合材料介電層202。
本發明複合材料結構200中之基材201可以為一多層電路板,例如埋入式線路結構電路板及/或非埋入式線路結構電路板。複合材料介電層202即直接位於基材201上。複合材料介電層202可以包含一觸媒介電層210以及一犧牲層220。觸媒介電層210可以包含一介電材料211與至少一觸媒顆粒212。觸媒顆粒212會分散於介電材料211中。一但使用例如雷射活化以後,觸媒介電層210在此觸媒顆粒212的幫助下,可以誘導一導電材料的沉積。
一方面,本發明複合材料結構200中之介電材料211可以包含一高分子材料,例如環氧樹脂、改質之環氧樹脂、聚脂、丙烯酸酯、氟素聚合物、聚亞苯基氧化物、聚醯亞胺、酚醛樹脂、聚碸、矽素聚合物、BT樹脂(bismaleimide triazine modified epoxy resin)、氰酸聚酯、聚乙烯、聚碳酸酯樹脂、丙烯腈-丁二烯-苯乙烯共聚物、聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丁二酯(PBT)、液晶高分子(liquid crystal polyester,LCP)、聚醯胺(PA)、尼龍6、共聚聚甲醛(POM)、聚苯硫醚(PPS)或是環狀烯烴共聚物(COC)等等。
另一方面,本發明複合材料結構200中之觸媒顆粒212可以包括金屬的配位化合物所形成之多個奈米顆粒。適當之金屬的配位化合物可以是金屬氧化物、金屬氮化物、金屬錯合物、及/或金屬螯合物。金屬的配位化合物中之金屬可以為鋅、銅、銀、金、鎳、鈀、鉑、鈷、銠、銥、銦、鐵、錳、鋁、鉻、鎢、釩、鉭、及/或鈦等等。
犧牲層220即位於複合材料介電層202之外表面上,或是覆蓋觸媒介電層210。犧牲層220可以由一絕緣材料所組成,例如,聚醯亞胺,而成為絕緣犧牲層。視不同狀況而定,犧牲層220可以為單層結構或是多層結構,其厚度最多可達25μm。以下將分別說明犧牲層220為單層結構或是多層結構之實施態樣。
如果犧牲層220為單層結構時,如第3圖所示,接下來圖案化整個複合材料介電層202。圖案化複合材料介電層202時,會形成溝槽225,同時活化觸媒顆粒212。圖案化複合材料介電層202的方式可以使用物理方法。例如,可以使用雷射燒蝕製程或電漿蝕刻製程。其中,可以使用紅外線雷射、紫外線雷射、準分子(Excimer)雷射或遠紅外線雷射等雷射光源來進行雷射燒蝕製程。
接著,如第4圖所示,形成一導線層230。導線層230會嵌入圖案化複合材料介電層202的溝槽225中,故位於活化了的觸媒顆粒之上。可以使用例如無電電鍍方法,將導電材料,例如化銅,填入圖案化複合材料介電層202之溝槽225中,形成導線層230。在活化了觸媒顆粒212的誘導下,導電材料應該主要會沉積在溝槽225中,而非活化了的觸媒顆粒以外之處。本發明之複合材料,可以選擇性使得無電電鍍沉積在觸媒介電層210被活化的溝槽225表面,所以當複合材料介電層202在進行電鍍時,可以降低電鍍滿溢的發生與避免導電材料從溝槽225的開口向四面八方延伸的問題。另外,導線層230的表面還較為平緩,使得最高點與最低點之差距會不大於3μm。
由於化學製程所得的銅與電鍍製程所得的銅在質地上並不完全相同,導線層230在結構上較佳僅包含單一銅層,例如由化銅製程所得,而不是由多種物理性質相異之銅所組成,例如混合由化學製程與電鍍製程所得的銅。在形成導線層230後即可移除掉犧牲層220,如第5A圖所示。可以使用例如撕除的方式來移除掉犧牲層220。
如果犧牲層220為多層結構時,如第6圖所示,犧牲層220可已包含一外犧牲層221與一內犧牲層222。本發明外犧牲層221與內犧牲層222之材料可以相同也可以不同。例如,內犧牲層222不溶於水,而外犧牲層221則不在此限。
接下來,圖案化整個複合材料介電層202。圖案化複合材料介電層202時,會形成溝槽225,同時活化觸媒顆粒212。圖案化複合材料介電層202的方式可以使用物理方法。例如,可以使用雷射燒蝕製程或電漿蝕刻製程。其中,可以使用紅外線雷射、紫外線雷射、準分子(Excimer)雷射或遠紅外線雷射等雷射光源來進行雷射燒蝕製程。
如果在使用雷射燒蝕製程或電漿蝕刻製程,圖案化複合材料介電層202的過程中,傷害了複合材料介電層202的表面,或是在複合材料介電層202的表面留下殘渣。這樣的結果,有可能會干擾活化了的觸媒顆粒212誘導導電材料沉積在溝槽225中的過程。此時,就可以移除掉外犧牲層221,來徹底解決掉這個問題。可以在圖案化複合材料介電層202之後,移除掉外犧牲層221,如第6A圖所示,使得複合材料介電層202的表面重新產生一乾淨的表面。
如果外犧牲層221包含一水溶性材料,可以在圖案化複合材料介電層202之後、形成導線層230之前,移除掉外犧牲層221,避免圖案化複合材料介電層202之後產生的任何雜質影響導線層230的形成。水溶性材料可以包含親水性高分子,使得在必要時可以用水洗去。例如,此等親水性高分子之特性官能基可以包含羥基(-OH)、醯胺基(-CONH2
)、磺酸基(-SO3
H)、羧基(-COOH)其中之一的官能基團,或者前述各官能基團的任意組合。如果外犧牲層221不溶於水,可以使用例如撕除的方式來移除掉外犧牲層221。
接著,如第7圖所示,形成一導線層230。導線層230會選擇性只沉積在被活化的觸媒介電層表面,故位於觸媒介電層210上。如果複合材料介電層202的表面已經重新恢復成一乾淨的表面,所以在使用例如無電電鍍方法,將導電材料,例如化銅,填入圖案化複合材料介電層202之溝槽225中,形成導線層230時,在無外在因素干擾下,活化了的觸媒顆粒212就很容易誘導導電材料主要沉積在溝槽225中。另外,導線層230表面會較為平緩,使得最高點與最低點之差距會不大於3μm。
本發明之複合材料,可以選擇性使得在無電電鍍的過程中導電材料不會形成在沒有經活化的觸媒顆粒212外,所以當複合材料介電層202在進行電鍍時,可以降低電鍍滿溢的發生與避免導電材料從溝槽225的開口向四面八方延伸的問題。
由於化學製程所得的銅與電鍍製程所得的銅在質地上並不完全相同,導線層230在結構上較佳僅包含單一銅層,例如由化銅製程所得,而不是由多種物理性質相異之銅所組成,例如混合由化學製程與電鍍製程所得的銅。
視製程差異之不同,導線層230有可能差不多與介電材料211等高,如第7A圖所示。或是,導線層230有可能比介電材料211稍高,如第7B圖所示。例如同一基材201上之導線層230,可能有些比介電材料211稍高,有些與介電材料211差不多等高。在形成導線層230後即可移除掉內犧牲層222,如第7B圖所示。可以使用例如撕除的方式來移除掉內犧牲層222。
以上所述僅為本發明之較佳實施例,凡依本發明申請專利範圍所做之均等變化與修飾,皆應屬本發明之涵蓋範圍。
101...基材
122...凹穴
130...導電材料
200...複合材料結構
201...基材
202...複合材料介電層
210...觸媒介電層
211...介電材料
212...觸媒顆粒
220...犧牲層
221...外犧牲層
222...內犧牲層
225...溝槽
第1圖例示現有無電電鍍技術造成電鍍滿溢的現象。
第2-7B圖例示形成本發明形成複合材料電路板結構方法之示意圖。
200...複合材料結構
201...基材
202...複合材料介電層
210...觸媒介電層
211...介電材料
212...觸媒顆粒
220...犧牲層
Claims (36)
- 一種形成複合材料電路板結構的方法,包含:提供一複合材料結構,包含:一基材;位於該基材上之一複合材料介電層,包含:一觸媒介電層,接觸該基材;以及一犧牲層,接觸該觸媒介電層,且不溶於水;圖案化該複合材料介電層並活化該觸媒顆粒;形成位於該活化觸媒顆粒上之一導線層;以及移除該犧牲層。
- 如請求項1形成複合材料電路板結構的方法,其中該基材為一多層電路板。
- 如請求項1形成複合材料電路板結構的方法,其中該基材包含一埋入式線路結構電路板。
- 如請求項1形成複合材料電路板結構的方法,其中該觸媒介電層包含一介電材料與一觸媒顆粒。
- 如請求項1形成複合材料電路板結構的方法,其中該介電材料包含一高分子材料。
- 如請求項5形成複合材料電路板結構的方法,其中該高分子材料選自由環氧樹脂、改質之環氧樹脂、聚脂、丙烯酸酯、氟素聚合物、聚亞苯基氧化物、聚醯亞胺、酚醛樹脂、聚碸、矽素聚合物、BT樹脂、氰酸聚酯、聚乙烯、聚碳酸酯樹脂、丙烯腈-丁二烯-苯乙烯共聚物、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、液晶高分子、聚醯胺、尼龍6、共聚聚甲醛、聚苯硫醚與環狀烯烴共聚物所組成的組合。
- 如請求項1形成複合材料電路板結構的方法,其中該觸媒顆粒包括多個奈米顆粒。
- 如請求項1形成複合材料電路板結構的方法,其中該觸媒顆粒的材質包括金屬的配位化合物。
- 如請求項8形成複合材料電路板結構的方法,其中該金屬的配位化合物選自於由一金屬氧化物、一金屬氮化物、一金屬錯合物、一金屬螯合物及其所組成的群組。
- 如請求項8形成複合材料電路板結構的方法,其中該金屬選自於由鋅、銅、銀、金、鎳、鈀、鉑、鈷、銠、銥、銦、鐵、錳、鋁、鉻、鎢、釩、鉭以及鈦所組成的群組。
- 如請求項1形成複合材料電路板結構的方法,其中該導線層嵌入該複合材料介電層中。
- 如請求項1形成複合材料電路板結構的方法,其中該導線層表面最高點與最低點之差距不大於3μm。
- 如請求項1形成複合材料電路板結構的方法,其中該導線層由單一銅層所組成。
- 如請求項1形成複合材料電路板結構的方法,其中使用一化銅製程形成該導線層。
- 如請求項1形成複合材料電路板結構的方法,其中使用一雷射加工以圖案化該複合材料介電層並活化該觸媒顆粒。
- 如請求項1形成複合材料電路板結構的方法,其中該犧牲層覆蓋該觸媒介電層。
- 一種形成複合材料電路板結構的方法,包含:提供一複合材料結構,包含:一基材;位於該基材上之一複合材料介電層,包含:一觸媒介電層,接觸該基材;一內犧牲層,接觸該觸媒介電層,且不溶於水;以及一外犧牲層,接觸該內犧牲層;圖案化該複合材料介電層並活化該觸媒顆粒;移除該外犧牲層;形成位於該活化觸媒顆粒上之一導線層;以及移除該內犧牲層。
- 如請求項17形成複合材料電路板結構的方法,其中該基材為一多層電路板。
- 如請求項17形成複合材料電路板結構的方法,其中該基材包含一埋入式線路結構電路板。
- 如請求項17形成複合材料電路板結構的方法,其中該觸媒介電層包含一介電材料與一觸媒顆粒。
- 如請求項17形成複合材料電路板結構的方法,其中該介電材料包含一高分子材料。
- 如請求項21形成複合材料電路板結構的方法,其中該高分子材料選自由環氧樹脂、改質之環氧樹脂、聚脂、丙烯酸酯、氟素聚合物、聚亞苯基氧化物、聚醯亞胺、酚醛樹脂、聚碸、矽素聚合物、BT樹脂、氰酸聚酯、聚乙烯、聚碳酸酯樹脂、丙烯腈-丁二烯-苯乙烯共聚物、聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、液晶高分子、聚醯胺、尼龍6、共聚聚甲醛、聚苯硫醚與環狀烯烴共聚物所組成的組合。
- 如請求項17形成複合材料電路板結構的方法,其中該觸媒顆粒包括多個奈米顆粒。
- 如請求項17形成複合材料電路板結構的方法,其中該觸媒顆粒的材質包括金屬的配位化合物。
- 如請求項24形成複合材料電路板結構的方法,其中該金屬的配位化合物選自於由一金屬氧化物、一金屬氮化物、一金屬錯合物、一金屬螯合物及其所組成的群組。
- 如請求項24形成複合材料電路板結構的方法,其中該金屬選自於由鋅、銅、銀、金、鎳、鈀、鉑、鈷、銠、銥、銦、鐵、錳、鋁、鉻、鎢、釩、鉭以及鈦所組成的群組。
- 如請求項17形成複合材料電路板結構的方法,其中該導線層嵌入該複合材料介電層中。
- 如請求項17形成複合材料電路板結構的方法,其中該導線層表面最高點與最低點之差距不大於3μm。
- 如請求項17形成複合材料電路板結構的方法,其中該導線層由單一銅層所組成。
- 如請求項17形成複合材料電路板結構的方法,其中使用一化銅製程形成該導線層。
- 如請求項17形成複合材料電路板結構的方法,其中該外犧牲層與該內犧牲層由相同之材料所組成。
- 如請求項17形成複合材料電路板結構的方法,其中該外犧牲層與該內犧牲層分別包含不同之材料。
- 如請求項32形成複合材料電路板結構的方法,其中該外犧牲層包含一水溶性材料。
- 如請求項33形成複合材料電路板結構的方法,其中該水溶性材料選自由羥基(-OH)、醯胺基(-CONH2 )、磺酸基(-So3 H)、羧基(-COOH)的官能基團所組成之群組。
- 如請求項17形成複合材料電路板結構的方法,其中使用一雷射加工以圖案化該複合材料介電層並活化該觸媒顆粒。
- 如請求項17形成複合材料電路板結構的方法,其中該內犧牲層覆蓋該觸媒介電層。
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TW098113029A TWI388122B (zh) | 2009-04-20 | 2009-04-20 | 形成複合材料電路板結構的方法 |
JP2009172915A JP5117455B2 (ja) | 2009-04-20 | 2009-07-24 | 複合構造物への導線パターン形成方法 |
US12/763,224 US20100266752A1 (en) | 2009-04-20 | 2010-04-20 | Method for forming circuit board structure of composite material |
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TW098113029A TWI388122B (zh) | 2009-04-20 | 2009-04-20 | 形成複合材料電路板結構的方法 |
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CN102071411B (zh) | 2010-08-19 | 2012-05-30 | 比亚迪股份有限公司 | 一种塑料制品的制备方法及一种塑料制品 |
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TWI553807B (zh) * | 2014-06-13 | 2016-10-11 | 思鷺科技股份有限公司 | 封裝結構 |
CN107210260A (zh) * | 2015-02-16 | 2017-09-26 | 英特尔公司 | 微电子内建层及其形成方法 |
US9706650B1 (en) | 2016-08-18 | 2017-07-11 | Sierra Circuits, Inc. | Catalytic laminate apparatus and method |
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TWI686109B (zh) * | 2014-05-19 | 2020-02-21 | 美商凱特聯有限責任公司 | 嵌入跡線 |
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US20100266752A1 (en) | 2010-10-21 |
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