TWI388021B - Wafer testing apparatus and processing equipment having the same - Google Patents
Wafer testing apparatus and processing equipment having the same Download PDFInfo
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- TWI388021B TWI388021B TW097119396A TW97119396A TWI388021B TW I388021 B TWI388021 B TW I388021B TW 097119396 A TW097119396 A TW 097119396A TW 97119396 A TW97119396 A TW 97119396A TW I388021 B TWI388021 B TW I388021B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9503—Wafer edge inspection
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Description
本發明有關於一種處理設備，特別是有關於一種如下所述之晶圓測試裝置以及具有此裝置的處理設備：晶圓測試裝置可檢查即將送入一組製程之晶圓的品質，並根據品質檢查結果判定是否應將晶圓送入處理腔室或後續此組製程、或是將晶圓自其中取出。The present invention relates to a processing apparatus, and more particularly to a wafer testing apparatus as described below and a processing apparatus having the same: the wafer testing apparatus can inspect the quality of a wafer to be sent to a set of processes, and according to the quality The result of the inspection determines whether the wafer should be fed into the processing chamber or subsequent set of processes, or the wafer is removed therefrom.
通常薄膜電晶體液晶顯示器包含擱置薄膜電晶體之下部玻璃基板、擱置彩色濾光片之上部玻璃基板及位於下部玻璃基板與上部玻璃基板之間的液晶。Generally, a thin film transistor liquid crystal display includes a glass substrate on which a thin film transistor is placed, a glass substrate on which an upper portion of the color filter is placed, and a liquid crystal between the lower glass substrate and the upper glass substrate.
用於擱置薄膜電晶體及彩色濾光片的所述玻璃基板在進行一列處理時，其邊緣將有所受損，因此當邊緣受損或有其他受損情況之所述玻璃基板進入下一製程或處理腔室時，即可出現問題，玻璃基板於腔室中距下一製程一定距離處可能碎裂。The glass substrate for holding the thin film transistor and the color filter will have an edge damaged when performing a series of processes, so that the glass substrate having the edge damaged or otherwise damaged enters the next process. When the chamber is processed, problems can occur, and the glass substrate may be broken at a certain distance from the next process in the chamber.
通常而言，其恢復將非常耗時。In general, its recovery will be very time consuming.
此外，視覺檢查是檢查基板狀態之習知方法。In addition, visual inspection is a well-known method of inspecting the state of a substrate.
若僅僅藉由視覺檢查來觀察玻璃基板之邊緣受損或有其他受損情況(如裂紋)，則會將基板上之外來物質如顆粒誤認為是受損，而其原本可於下一步清除製程中加以清除。If the edge of the glass substrate is damaged or other damages (such as cracks) are observed by visual inspection, the foreign matter such as particles on the substrate may be mistaken for damage, and the original process may be removed in the next step. Clear it.
同樣，當碎裂之玻璃或來自外部或內部之顆粒粘附於玻璃基板頂面時，碎裂玻璃等將損壞後續製程中使用的設 備。Similarly, when the broken glass or particles from the outside or the inside adhere to the top surface of the glass substrate, the broken glass or the like will damage the design used in the subsequent process. Ready.
基於上述緣由，設備之運作時間將延長，且設備之維護、修理成本將上升。Based on the above reasons, the operation time of the equipment will be prolonged, and the maintenance and repair costs of the equipment will increase.
因此，習知方法是，對處理腔室中之玻璃基板，於應用需電漿之製程(如沉積、蝕刻、濺鍍)之前，檢查玻璃基板的基本特性。Therefore, the conventional method is to inspect the glass substrate in the processing chamber and inspect the basic characteristics of the glass substrate before applying a plasma-containing process (such as deposition, etching, sputtering).
然而，對玻璃基板表面之習知檢查是使用視覺檢查。因此，裂紋與顆粒間之區分並不嚴格。此外尚存在另一問題，即檢查玻璃基板表面上之金屬或碎裂玻璃時需要視覺攝像機。However, the conventional inspection of the surface of the glass substrate is to use a visual inspection. Therefore, the distinction between cracks and particles is not critical. In addition, there is another problem that a visual camera is required to inspect the metal or the broken glass on the surface of the glass substrate.
由於基板上之裂紋與顆粒間區分不明顯，習知方法中甚至將偵測到原本可被充分清除之顆粒。因此，偵測不能正確進行。Since the cracks on the substrate are not clearly distinguishable from the particles, even conventionally, the particles which are sufficiently cleaned can be detected. Therefore, the detection cannot be performed correctly.
因此，近來對各種技術之開發的需求與日俱增，從而得以判定玻璃基板頂面及邊緣是否存在裂紋或顆粒，及於將玻璃基板送入執行一組製程所在之處理腔室或送入下一製程之前，區分所述裂紋與顆粒。Therefore, there has been an increasing demand for the development of various technologies to determine whether cracks or particles are present on the top surface and edges of the glass substrate, and before the glass substrate is fed into a processing chamber in which a set of processes is performed or before being sent to the next process. , distinguishing the crack from the particle.
本發明旨在解決上述問題，且本發明之一目標是提供一種如下所述之晶圓測試裝置以及具此裝置的處理設備，此晶圓測試裝置可檢查即將送入一組製程之晶圓的品質(是否存在裂紋或顆粒)，並根據品質檢查結果判定是否應將晶圓送入處理腔室或後續此組製程、或是將晶圓自其中取出。The present invention is directed to solving the above problems, and an object of the present invention is to provide a wafer testing apparatus as described below and a processing apparatus having the same, which can inspect wafers to be sent to a set of processes. Quality (whether there are cracks or particles), and based on the quality inspection results to determine whether the wafer should be sent to the processing chamber or subsequent set of processes, or the wafer is taken out of it.
本發明之另一目標是提供一種如下所述之晶圓測試裝置以及具有此裝置的處理設備，此晶圓測試裝置可於改良積集體(integrating body)靠近基板之邊緣且有雷射發射至基板之邊緣部份時，容易地檢查基板之邊緣，以便偵測由積集體而穿越基板之雷射的光通量。Another object of the present invention is to provide a wafer testing apparatus as described below and a processing apparatus having the same, which can improve the integrated body near the edge of the substrate and have a laser emission to the substrate At the edge portion, the edges of the substrate are easily inspected to detect the luminous flux of the laser passing through the substrate by the collective.
本發明之又一目標是提供一種如下所述之晶圓測試裝置以及具有此裝置的處理設備，此晶圓測試裝置可沿基板之長度方向或頂面發射直線束，從而檢查晶圓內部或頂面之品質。It is still another object of the present invention to provide a wafer testing apparatus as described below and a processing apparatus having the same, which can emit a linear beam along the length direction or the top surface of the substrate to inspect the inside or the top of the wafer The quality of the face.
根據本發明的一個方面，一種晶圓測試裝置可包括：晶圓轉移部，其沿一轉移路徑轉移晶圓；以及檢查器，其包括第一檢查器及第二檢查器，其中所述第一檢查器位於所述晶圓的邊緣上方且使用穿過所述晶圓的雷射，所述第二檢查器位於所述晶圓的側部上方且使用沿所述晶圓的表面的雷射。According to an aspect of the invention, a wafer testing apparatus may include: a wafer transfer portion that transfers a wafer along a transfer path; and an inspector including a first inspector and a second inspector, wherein the first An inspector is positioned over the edge of the wafer and uses a laser that passes through the wafer, the second inspector being over the side of the wafer and using a laser along the surface of the wafer.
第一檢查器包括：位於晶圓之邊緣下方的第一雷射發生器，用於發射雷射；位於晶圓之邊緣上方的第一檢查模組，用於判定晶圓之邊緣是否存在裂紋或顆粒，並偵測穿越晶圓邊緣之由入射之相對側所射出之雷射之通量，從而區***紋與顆粒；以及用於拍攝晶圓之外表面之攝像模組，且第二檢查器包括：位於待轉移晶圓側部之第二雷射發生器，用於沿晶圓之長度方向發射雷射；連接至第二雷射發生器之可垂直移動圓柱，用於將雷射之照射位置垂直移動至某位置；以及位於晶圓上方之第二檢查模組，用於 偵測晶圓所散射出之雷射。The first inspector includes: a first laser generator located below the edge of the wafer for emitting a laser; and a first inspection module located above the edge of the wafer for determining whether there is a crack at the edge of the wafer or Particles, and detecting the flux of laser light emitted from opposite sides of the wafer, thereby distinguishing between cracks and particles; and a camera module for photographing the outer surface of the wafer, and the second inspector includes a second laser generator located at a side of the wafer to be transferred for emitting laser light along the length of the wafer; and a vertically movable cylinder connected to the second laser generator for illuminating the laser Moving vertically to a position; and a second inspection module located above the wafer for Detecting lasers scattered by the wafer.
檢查器可包括轉移單元，轉移單元電性連接至第一及第二檢查模組，當晶圓中存在裂紋或第二檢查模組偵測到雷射時，轉移單元沿另一轉移路徑取出晶圓。The inspector may include a transfer unit electrically connected to the first and second inspection modules. When there is a crack in the wafer or the second inspection module detects the laser, the transfer unit takes out the crystal along another transfer path. circle.
第一檢查模組可為一個包括如下所述主體之積集體，此主體包括光入射部(light incident part)、與光入射部相對之光射出部(light exit part)、以及位於光入射部與光射出部之間的漫射光射出部(diffused-light exit part)，漫射光射出部允許入射至光入射部之光經漫射射出，並形成預定內部空間，漫射光射出部中提供有第一光學偵測器，用於偵測漫射光通量，光射出部中提供有第二光學偵測器，用於偵測入射至光入射部並經由光射出部射出之光通量，且有監視模組電性連接至第一及第二光學偵測器，用於判定是否存在裂紋與顆粒，並基於所偵測到之光通量區***紋與顆粒，且攝像模組可包括位於晶圓一側之光源，用於照射晶圓，且有攝像機位於晶圓另一側，用於拍攝晶圓之外表面。The first inspection module may be an accumulation body including a body including a light incident part, a light exit part opposite to the light incident portion, and a light incident portion a diffused-light exit part between the light emitting portions, the diffused light emitting portion allows the light incident to the light incident portion to be diffused and emitted, and forms a predetermined internal space, and the diffused light emitting portion is provided with the first The optical detector is configured to detect the diffused light flux, and the second optical detector is provided in the light emitting portion for detecting the luminous flux incident on the light incident portion and emitted through the light emitting portion, and the monitoring module is electrically Connected to the first and second optical detectors for determining whether cracks and particles are present, and distinguishing between cracks and particles based on the detected luminous flux, and the camera module may include a light source on one side of the wafer, The wafer is illuminated and a camera is located on the other side of the wafer for capturing the outer surface of the wafer.
第一檢查模組可為包括透鏡及光電二極體之光學系統，透鏡位於晶圓旁，用於聚光雷射，光電二極體位於透鏡旁，用於偵測雷射之通量。The first inspection module can be an optical system including a lens and a photodiode. The lens is located next to the wafer for collecting laser light, and the photodiode is located beside the lens for detecting the flux of the laser.
主體可為圓柱形。The body can be cylindrical.
第二檢查模組可位於晶圓上方，且包括多個光電二極體。The second inspection module can be located above the wafer and includes a plurality of photodiodes.
第二檢查模組可為一個包括如下所述主體之積集 體，此主體包括光入射部、與光入射部相對之光射出部、以及位於光入射部與光射出部之間的漫射光射出部，漫射光射出部允許入射至光入射部之光經漫射射出，並形成預定內部空間，漫射光射出部中提供有第一光學偵測器，用於偵測漫射光通量，光射出部中提供有第二光學偵測器，用於偵測入射至光入射部並經由光射出部射出之光通量，且有監視模組電性連接至第一及第二光學偵測器，用於判定是否存在裂紋與顆粒，並基於所偵測到之光通量區***紋與顆粒。The second inspection module can be an accumulation including a body as described below The body includes a light incident portion, a light emitting portion opposed to the light incident portion, and a diffused light emitting portion between the light incident portion and the light emitting portion, and the diffused light emitting portion allows light incident to the light incident portion to pass through Shooting and forming a predetermined internal space, the first optical detector is provided in the diffused light emitting portion for detecting the diffused light flux, and the second optical detector is provided in the light emitting portion for detecting the incident to The light incident portion and the light flux emitted from the light emitting portion, and the monitoring module is electrically connected to the first and second optical detectors for determining whether there are cracks and particles, and distinguishing the crack based on the detected luminous flux With particles.
內部空間可包括一個具有預定長度且平行形成之第一空間、以及位於第一空間相對兩側之半球形狀的第二空間，第二空間與第一空間相連通，且第一及第二空間與光入射部及光射出部相連通。The inner space may include a first space having a predetermined length and formed in parallel, and a second space having a hemispherical shape on opposite sides of the first space, the second space being in communication with the first space, and the first and second spaces and The light incident portion and the light exit portion are in communication with each other.
光入射部與光射出部可各包括相同長度之孔，孔是以線性方式沿主體之長度方向形成，且漫射光射出部可包括多個以非線性方式沿主體之長度方向形成的通孔。The light incident portion and the light exit portion may each include holes of the same length, the holes are formed in a linear manner along the length direction of the body, and the diffused light exit portion may include a plurality of through holes formed in a nonlinear manner along the length direction of the body.
主體可包括可卸體，用以配合至內部空間，可卸體包括：一個具有預定長度且平行形成之第三空間；位於第三空間相對兩側之半球形狀的第四空間，第四空間與第三空間相連通；以及輔助光入射部和輔助光射出部，第三及第四空間經由輔助光入射部及輔助光射出部而與光入射部及光射出部相連通。The main body may include a detachable body for fitting to the inner space, the detachable body comprising: a third space having a predetermined length and formed in parallel; a fourth space in a hemispherical shape on opposite sides of the third space, the fourth space and The third space is in communication with each other; and the auxiliary light incident portion and the auxiliary light emitting portion, and the third and fourth spaces communicate with the light incident portion and the light emitting portion via the auxiliary light incident portion and the auxiliary light emitting portion.
第一光學偵測器及第二光學偵測器可包括光電二極體。The first optical detector and the second optical detector may include a photodiode.
監視模組可包括：安裝於主體內之控制器，其電性連接至第一及第二光學偵測器，用於判定所偵測到之光通量是否處於光通量參考範圍內，判定所偵測到之漫射光通量是否處於漫射光通量參考範圍內，判定是否存在裂紋或顆粒，並區***紋與顆粒；以及安裝於主體內之顯示器，其電性連接至控制器，用於以視覺方式顯示以下內容：為所偵測到之光通量而預設的光通量參考範圍、所偵測到之光通量是否處於光通量參考範圍內、為所偵測到之漫射光通量而預設的漫射光通量參考範圍、以及所偵測到之漫射光通量是否處於漫射光通量參考範圍內，其中光通量參考範圍包括用於區***紋之第一光通量參考範圍、及用於區分顆粒之第二光通量參考範圍，且其中漫射光通量參考範圍包括用於區***紋之第一漫射光通量參考範圍、及用於區分顆粒之第二漫射光通量參考範圍。The monitoring module may include: a controller installed in the main body, electrically connected to the first and second optical detectors, configured to determine whether the detected luminous flux is within the luminous flux reference range, and determine that the detected Whether the diffused light flux is within the reference range of the diffused light flux, determining whether cracks or particles are present, and distinguishing between cracks and particles; and the display mounted in the body electrically connected to the controller for visually displaying the following : a reference range of the luminous flux preset for the detected luminous flux, whether the detected luminous flux is within the luminous flux reference range, a reference range of the diffused luminous flux preset for the detected diffused luminous flux, and Detecting whether the diffused light flux is within a reference range of the diffused light flux, wherein the light flux reference range includes a first light flux reference range for distinguishing the cracks, and a second light flux reference range for distinguishing the particles, and wherein the diffused light flux reference The range includes a first diffused light flux reference range for distinguishing cracks and a second diffused light pass for distinguishing particles Reference range.
根據本發明的另一個方面，一種具晶圓測試裝置之處理設備可包括：腔室，其內部形成有晶圓之轉移路徑；位置靠近腔室之晶圓轉移部，用於將晶圓沿轉移路徑轉移至腔室；以及晶圓測試裝置，包括檢查器，所述檢查器包括第一檢查器及第二檢查器，其中所述第一檢查器位於所述晶圓的邊緣上方且使用穿過所述晶圓的雷射，所述第二檢查器位於所述晶圓的側部上方且使用沿所述晶圓的表面的雷射。According to another aspect of the present invention, a processing apparatus having a wafer testing apparatus may include: a chamber having a transfer path of a wafer formed therein; and a wafer transfer portion positioned adjacent to the chamber for transferring the wafer edge The path is transferred to the chamber; and the wafer testing device includes an inspector including a first inspector and a second inspector, wherein the first inspector is located above the edge of the wafer and is used through The laser of the wafer, the second inspector is located above the side of the wafer and uses a laser along the surface of the wafer.
第一檢查器包括：位於晶圓之邊緣下方的第一雷射發生器，用於發射雷射；位於晶圓之邊緣上方的第一檢查模 組，用於判定晶圓之邊緣是否存在裂紋或顆粒，並偵測穿越晶圓邊緣之由入射之相對側所射出之雷射之通量，從而區***紋與顆粒；以及用於拍攝晶圓之外表面之攝像模組，且第二檢查器包括：位於待轉移晶圓側部之第二雷射發生器，用於沿晶圓之長度方向發射雷射；連接至第二雷射發生器之可垂直移動圓柱，用於將雷射之照射位置垂直移動至某位置；以及位於晶圓上方之第二檢查模組，用於偵測晶圓所散射出之雷射。The first inspector includes: a first laser generator located below the edge of the wafer for emitting a laser; and a first inspection mode located above the edge of the wafer a group for determining the presence of cracks or particles at the edge of the wafer and detecting the flux of the laser exiting the opposite side of the wafer from the opposite side of the wafer to distinguish cracks and particles; and for imaging wafers a camera module on the outer surface, and the second inspector includes: a second laser generator located at a side of the wafer to be transferred for emitting a laser along a length of the wafer; and connected to the second laser generator The cylinder can be moved vertically to vertically move the laser irradiation position to a certain position; and a second inspection module located above the wafer is used to detect the laser scattered by the wafer.
檢查器可包括轉移單元，轉移單元電性連接至第一及第二檢查模組，當晶圓中存在裂紋或第二檢查模組偵測到雷射時，轉移單元沿另一轉移路徑取出晶圓。The inspector may include a transfer unit electrically connected to the first and second inspection modules. When there is a crack in the wafer or the second inspection module detects the laser, the transfer unit takes out the crystal along another transfer path. circle.
第一檢查模組可為一個包括如下所述主體之積集體，此主體包括光入射部、與光入射部相對之光射出部、以及位於光入射部與光射出部之間的漫射光射出部，漫射光射出部允許入射至光入射部之光經漫射射出，並形成預定內部空間，漫射光射出部中提供有第一光學偵測器，用於偵測漫射光通量，光射出部中提供有第二光學偵測器，用於偵測入射至光入射部並經由光射出部射出之光通量，且有監視模組電性連接至第一及第二光學偵測器，用於判定是否存在裂紋與顆粒，並基於所偵測到之光通量區***紋與顆粒，且攝像模組可包括位於晶圓一側之光源，用於照射晶圓，且有攝像機位於晶圓另一側，用於拍攝晶圓之外表面。The first inspection module may be an accumulation body including a main body including a light incident portion, a light exit portion opposite to the light incident portion, and a diffused light exit portion between the light incident portion and the light exit portion. The diffused light emitting portion allows the light incident to the light incident portion to be diffused and emitted, and forms a predetermined internal space. The diffused light emitting portion is provided with a first optical detector for detecting the diffused light flux, and the light emitting portion is A second optical detector is provided for detecting the luminous flux incident on the light incident portion and emitted through the light emitting portion, and the monitoring module is electrically connected to the first and second optical detectors for determining whether There are cracks and particles, and the cracks and particles are distinguished based on the detected luminous flux, and the camera module may include a light source on one side of the wafer for illuminating the wafer, and a camera on the other side of the wafer for Take the outer surface of the wafer.
第一檢查模組可為包括透鏡及光電二極體之光學系 統，透鏡位於晶圓旁，用於聚光雷射，光電二極體位於透鏡旁，用於偵測雷射之通量。The first inspection module can be an optical system including a lens and a photodiode The lens is located next to the wafer for concentrating the laser, and the photodiode is located next to the lens for detecting the flux of the laser.
主體可為圓柱形。The body can be cylindrical.
第二檢查模組可位於晶圓上方，且包括多個光電二極體。The second inspection module can be located above the wafer and includes a plurality of photodiodes.
第二檢查模組可為一個包括如下所述主體之積集體，此主體包括光入射部、與光入射部相對之光射出部、以及位於光入射部與光射出部之間的漫射光射出部，漫射光射出部允許入射至光入射部之光經漫射射出，並形成預定內部空間，漫射光射出部中提供有第一光學偵測器，用於偵測漫射光通量，光射出部中提供有第二光學偵測器，用於偵測入射至光入射部並經由光射出部射出之光通量，且有監視模組電性連接至第一及第二光學偵測器，用於判定是否存在裂紋與顆粒，並基於所偵測到之光通量區***紋與顆粒。The second inspection module may be an accumulation body including a main body including a light incident portion, a light exit portion opposite to the light incident portion, and a diffused light exit portion between the light incident portion and the light exit portion. The diffused light emitting portion allows the light incident to the light incident portion to be diffused and emitted, and forms a predetermined internal space. The diffused light emitting portion is provided with a first optical detector for detecting the diffused light flux, and the light emitting portion is A second optical detector is provided for detecting the luminous flux incident on the light incident portion and emitted through the light emitting portion, and the monitoring module is electrically connected to the first and second optical detectors for determining whether Cracks and particles are present and the cracks and particles are distinguished based on the detected luminous flux.
內部空間可包括一個具有預定長度且平行形成之第一空間、以及位於第一空間相對兩側之半球形狀的第二空間，第二空間與第一空間相連通，且第一及第二空間可與光入射部及光射出部相連通。The inner space may include a first space having a predetermined length and formed in parallel, and a second space in a hemispherical shape on opposite sides of the first space, the second space being in communication with the first space, and the first and second spaces may be It is in communication with the light incident portion and the light exit portion.
光入射部與光射出部可各包括相同長度之孔，孔是以線性方式沿主體之長度方向形成，且漫射光射出部包括多個以非線性方式沿主體之長度方向形成的通孔。The light incident portion and the light exit portion may each include holes of the same length, the holes are formed in a linear manner along the length direction of the body, and the diffused light exit portion includes a plurality of through holes formed in a nonlinear manner along the length direction of the body.
主體可包括可卸體，用以配合至內部空間，可卸體包括：一個具有預定長度且平行形成之第三空間；位於第三 空間相對兩側之半球形狀的第四空間，第四空間與第三空間相連通；以及輔助光入射部和輔助光射出部，第三及第四空間經由輔助光入射部及輔助光射出部而與光入射部及光射出部相連通。The main body may include a detachable body for fitting to the inner space, and the detachable body includes: a third space having a predetermined length and being formed in parallel; a fourth space of a hemispherical shape on opposite sides of the space, the fourth space is in communication with the third space; and the auxiliary light incident portion and the auxiliary light exit portion, and the third and fourth spaces are via the auxiliary light incident portion and the auxiliary light exit portion It is in communication with the light incident portion and the light exit portion.
第一光學偵測器及第二光學偵測器可包括光電二極體。The first optical detector and the second optical detector may include a photodiode.
監視模組可包括：安裝於主體內之控制器，其電性連接至第一及第二光學偵測器，用於判定所偵測到之光通量是否處於光通量參考範圍內，判定所偵測到之漫射光通量是否處於漫射光通量參考範圍內，判定是否存在裂紋或顆粒，並區***紋與顆粒；以及安裝於主體內之顯示器，其電性連接至控制器，用於以視覺方式顯示以下內容：為所偵測到之光通量而預設的光通量參考範圍、所偵測到之光通量是否處於光通量參考範圍內、為所偵測到之漫射光通量而預設的漫射光通量參考範圍、以及所偵測到之漫射光通量是否處於漫射光通量參考範圍內，其中光通量參考範圍包括用於區***紋之第一光通量參考範圍、及用於區分顆粒之第二光通量參考範圍，且其中漫射光通量參考範圍包括用於區***紋之第一漫射光通量參考範圍、及用於區分顆粒之第二漫射光通量參考範圍。The monitoring module may include: a controller installed in the main body, electrically connected to the first and second optical detectors, configured to determine whether the detected luminous flux is within the luminous flux reference range, and determine that the detected Whether the diffused light flux is within the reference range of the diffused light flux, determining whether cracks or particles are present, and distinguishing between cracks and particles; and the display mounted in the body electrically connected to the controller for visually displaying the following : a reference range of the luminous flux preset for the detected luminous flux, whether the detected luminous flux is within the luminous flux reference range, a reference range of the diffused luminous flux preset for the detected diffused luminous flux, and Detecting whether the diffused light flux is within a reference range of the diffused light flux, wherein the light flux reference range includes a first light flux reference range for distinguishing the cracks, and a second light flux reference range for distinguishing the particles, and wherein the diffused light flux reference The range includes a first diffused light flux reference range for distinguishing cracks and a second diffused light pass for distinguishing particles Reference range.
下面將結合附圖描述本發明之實施例的晶圓測試裝置以及處理設備。A wafer test apparatus and a processing apparatus of an embodiment of the present invention will be described below with reference to the accompanying drawings.
圖1說明具有本發明一實施例之晶圓測試裝置的處理 設備。1 illustrates the processing of a wafer testing apparatus having an embodiment of the present invention device.
本發明一實施例之晶圓測試裝置A包括：晶圓轉移部500，用於沿轉移路徑a轉移晶圓10；位於晶圓10之邊緣附近的檢查器600，用於檢查晶圓10之邊緣是否存在裂紋及顆粒，並於存在裂紋或顆粒時沿另一轉移路徑c取出晶圓10。The wafer testing apparatus A according to an embodiment of the present invention includes a wafer transfer portion 500 for transferring the wafer 10 along the transfer path a, and an inspector 600 located near the edge of the wafer 10 for inspecting the edge of the wafer 10. Whether cracks and particles are present, and the wafer 10 is taken along another transfer path c in the presence of cracks or particles.
如圖1所示，具有此組態之晶圓測試裝置A被置於處理腔室(processing chamber)PC旁，並於此處進行一組製程。晶圓10可沿轉移路徑a送入處理腔室PC。As shown in Figure 1, a wafer test apparatus A having this configuration is placed next to a processing chamber PC where a set of processes is performed. The wafer 10 can be fed into the processing chamber PC along the transfer path a.
圖2說明具有本發明另一實施例之晶圓測試裝置的處理設備。2 illustrates a processing apparatus having a wafer testing apparatus according to another embodiment of the present invention.
如圖2所示，具有上述組態之晶圓測試裝置A位於運送器20附近，所述運送器20於執行此組製程之前或之後加載。晶圓10可沿轉移路徑a送入運送器20。As shown in FIG. 2, the wafer test apparatus A having the above configuration is located near the carrier 20, and the carrier 20 is loaded before or after the execution of the set of processes. The wafer 10 can be fed into the carrier 20 along the transfer path a.
圖3說明具有本發明第三實施例之晶圓測試裝置的處理設備。Figure 3 illustrates a processing apparatus having a wafer testing apparatus according to a third embodiment of the present invention.
參見圖3，轉移腔室(transfer chamber)TC位於中心，且多個處理腔室PC1、PC2、PC3及PC4位於轉移腔室TC周圍。處理腔室PC1、PC2、PC3及PC4經由閘閥(gate valve)GV與轉移腔室TC相連通。Referring to FIG. 3, a transfer chamber TC is located at the center, and a plurality of processing chambers PC1, PC2, PC3, and PC4 are located around the transfer chamber TC. The processing chambers PC1, PC2, PC3, and PC4 are in communication with the transfer chamber TC via a gate valve GV.
此外，轉移機械手(transfer robot)RB安裝於轉移腔室TC內，用於將晶圓10(如玻璃基板)依序送入多個處理腔室PC1、PC2、PC3及PC4或自其中取出。Further, a transfer robot RB is mounted in the transfer chamber TC for sequentially feeding or removing the wafer 10 (such as a glass substrate) into or from the plurality of processing chambers PC1, PC2, PC3, and PC4.
此外，轉移腔室TC與至少一個負載鎖定腔室(load lock chamber)LLC1、LLC2相連接。負載鎖定腔室LLC1、LLC2充當待轉移晶圓10在轉移至轉移腔室TC之前以備用狀態停留的空間。In addition, the transfer chamber TC and at least one load lock chamber (load Lock chamber) LLC1, LLC2 are connected. The load lock chambers LLC1, LLC2 serve as a space in which the wafer 10 to be transferred stays in a standby state before being transferred to the transfer chamber TC.
同時，負載鎖定腔室LLC1、LLC2連接至晶圓測試裝置A且與其相連通。晶圓測試裝置A形成轉移路徑a，晶圓10經此轉移路徑a轉移至負載鎖定腔室LLC1、LLC2。At the same time, the load lock chambers LLC1, LLC2 are connected to and in communication with the wafer test apparatus A. The wafer test apparatus A forms a transfer path a through which the wafer 10 is transferred to the load lock chambers LLC1, LLC2.
因此，晶圓10可沿轉移路徑a送入負載鎖定腔室LLC1、LLC2。此外，晶圓測試裝置A形成另一轉移路徑c，晶圓經此轉移路徑c被取出送至預定位置。Therefore, the wafer 10 can be fed into the load lock chambers LLC1, LLC2 along the transfer path a. Further, the wafer test apparatus A forms another transfer path c through which the wafer is taken out and sent to a predetermined position.
圖4是說明本發明一實施例之晶圓測試裝置中之檢查器及傳送帶型晶圓運送器之佈局的平面視圖。圖5及圖6說明本發明一實施例之晶圓測試裝置。4 is a plan view showing the layout of an inspector and a conveyor type wafer carrier in a wafer testing apparatus according to an embodiment of the present invention. 5 and 6 illustrate a wafer testing apparatus according to an embodiment of the present invention.
下面將結合圖4至圖6描述本發明圖1至圖3所示實施例之晶圓測試裝置。A wafer testing apparatus of the embodiment shown in Figs. 1 to 3 of the present invention will be described below with reference to Figs.
如圖5所示，晶圓測試裝置A包括晶圓轉移部500和檢查器600，晶圓轉移部500用於沿轉移路徑a將晶圓10轉移至圖1中之處理腔室PC、圖2中之運送器20或圖3中之負載鎖定腔室LLC1、LLC2，檢查器600用於檢查晶圓10之邊緣是否存在裂紋或顆粒、區***紋與顆粒、並於存在裂紋時沿另一轉移路徑c取出晶圓10。As shown in FIG. 5, the wafer testing apparatus A includes a wafer transfer unit 500 and an inspector 600 for transferring the wafer 10 along the transfer path a to the processing chamber PC in FIG. 1, FIG. In the carrier 20 or the load lock chambers LLC1, LLC2 in FIG. 3, the inspector 600 is used to inspect the edge of the wafer 10 for cracks or particles, distinguish cracks from particles, and along another transfer path in the presence of cracks. c Take out the wafer 10.
參見圖5與圖6，晶圓轉移部500舉例而言採用傳送帶之形式。Referring to Figures 5 and 6, the wafer transfer portion 500 is exemplified by a conveyor belt.
晶圓轉移部500包括用於放置並運送晶圓10之傳送帶511和沿轉移路徑a移動傳送帶511之滾筒512。The wafer transfer portion 500 includes a conveyor belt 511 for placing and transporting the wafer 10 and a drum 512 for moving the conveyor belt 511 along the transfer path a.
或者，可以不同裝置實現晶圓轉移部500，只要其能沿轉移路徑a轉移晶圓10。Alternatively, the wafer transfer portion 500 may be implemented in different devices as long as it can transfer the wafer 10 along the transfer path a.
根據本發明的一個方面，檢查器600可包括第一檢查器610及第二檢查器620。According to one aspect of the invention, the inspector 600 can include a first inspector 610 and a second inspector 620.
或者，每個檢查器600可包括單獨的第一檢查器610或第二檢查器620。Alternatively, each inspector 600 can include a separate first inspector 610 or second inspector 620.
此外，檢查器600可包括轉移單元640。此處，轉移單元640可為一種轉移裝置，例如能拾起晶圓10並將其沿另一轉移路徑c取出之機械手或夾鉗。Further, the checker 600 can include a transfer unit 640. Here, the transfer unit 640 can be a transfer device such as a robot or clamp that can pick up the wafer 10 and take it along another transfer path c.
檢查器600之具體組態見下文。The specific configuration of the inspector 600 is as follows.
如圖4所示，第一檢查器610位於晶圓10之邊緣旁。此外，第二檢查器620位於晶圓10之轉移路徑a的側部或上方。As shown in FIG. 4, the first inspector 610 is located beside the edge of the wafer 10. Further, the second inspector 620 is located on the side or above the transfer path a of the wafer 10.
圖5說明本發明一實施例之晶圓測試裝置。圖6展示圖5之積集體之一不同佈局。Figure 5 illustrates a wafer testing apparatus in accordance with one embodiment of the present invention. Figure 6 shows a different layout of one of the collectives of Figure 5.
參見圖5，第一檢查器610包括位於晶圓10邊緣下方用於發生雷射之第一雷射發生器611及攝像模組612。Referring to FIG. 5, the first inspector 610 includes a first laser generator 611 and a camera module 612 located below the edge of the wafer 10 for laser generation.
第一檢查模組可置於晶圓10邊緣上方，並接收穿越晶圓10之邊緣的入射雷射。於是，可偵測到入射位置相應側的射出雷射的光通量，從而可判定晶圓10之邊緣是否存在裂紋或顆粒，並區***紋與顆粒。The first inspection module can be placed over the edge of the wafer 10 and receive incident laser light across the edge of the wafer 10. Thus, the luminous flux of the exiting laser on the corresponding side of the incident position can be detected, so that the edge of the wafer 10 can be judged whether there are cracks or particles, and the crack and the particles are distinguished.
攝像模組612可置於晶圓10之上方或下方，且包括光源612a和攝像機612b，光源612a用於照射晶圓10之一側，攝像機612b用於拍攝被光源612a照射之晶圓10 的一側。The camera module 612 can be placed above or below the wafer 10 and includes a light source 612a for illuminating one side of the wafer 10, and a camera 612b for capturing the wafer 10 illuminated by the light source 612a. One side.
舉例而言，光源612a可置於晶圓10下方，且攝像機612b可置於晶圓10上方。For example, light source 612a can be placed under wafer 10 and camera 612b can be placed over wafer 10.
或者，參見圖6，第一雷射發生器611可置於晶圓10邊緣上方，第一檢查模組可置於晶圓10邊緣下方。Alternatively, referring to FIG. 6, a first laser generator 611 can be placed over the edge of the wafer 10, and a first inspection module can be placed under the edge of the wafer 10.
此處，圖5及圖6所示之第一檢查模組為圓柱形之積集體。或者，第一檢查模組可為積集球體。Here, the first inspection module shown in FIG. 5 and FIG. 6 is a cylindrical assembly. Alternatively, the first inspection module may be an accumulation sphere.
積集體位於晶圓10邊緣下方，可偵測穿越晶圓10邊緣、入射至晶圓10且與入射位置相對側射出的雷射光通量，從而判定晶圓10之邊緣是否存在裂紋或顆粒，並區***紋與顆粒。The accumulation group is located below the edge of the wafer 10, and can detect the laser light flux that passes through the edge of the wafer 10, is incident on the wafer 10 and is emitted from the opposite side of the incident position, thereby determining whether there are cracks or particles on the edge of the wafer 10, and distinguishing Cracks and particles.
下面將描述積集體之組態及積集球體。The configuration of the collective and the accumulation sphere will be described below.
圖7說明本發明另一實施例之晶圓測試裝置，圖8展示圖7之光學系統之不同佈局。Figure 7 illustrates a wafer testing apparatus in accordance with another embodiment of the present invention, and Figure 8 illustrates a different layout of the optical system of Figure 7.
參見圖7與圖8，第一檢查模組可為光學系統700，後者包括用於聚光雷射之聚光透鏡(condenser lens)710及位於聚光透鏡710旁之光電二極體720，光電二極體720位於聚光路徑上，偵測聚光雷射之光通量。Referring to FIG. 7 and FIG. 8 , the first inspection module can be an optical system 700. The latter includes a condenser lens 710 for collecting laser light and a photodiode 720 located adjacent to the collecting lens 710. The diode 720 is located on the collecting path to detect the luminous flux of the concentrated laser.
第一檢查模組可如圖7所示置於晶圓10上方，或如圖8所示置於晶圓10下方。The first inspection module can be placed over the wafer 10 as shown in FIG. 7, or placed under the wafer 10 as shown in FIG.
圖9展示圖5之第二檢查器。圖10說明圖9之第二檢查器之運作方式。圖11是本發明一實施例之光電二極體結構。圖12說明圖9之第二檢查器之另一運作方式。Figure 9 shows the second inspector of Figure 5. Figure 10 illustrates the operation of the second inspector of Figure 9. Figure 11 is a diagram showing the structure of a photodiode according to an embodiment of the present invention. Figure 12 illustrates another mode of operation of the second inspector of Figure 9.
參見圖9，第二檢查器620包括第二雷射發生器621 及可垂直移動圓柱622，第二雷射發生器621位於待轉移晶圓10之側部，用於沿晶圓10之長度方向發生雷射，可垂直移動圓柱622連接至第二雷射發生器621，用於將雷射之照射位置垂直移動至預定位置。第二檢查模組位於晶圓10上方，用於偵測晶圓10所散射出之雷射。Referring to FIG. 9, the second checker 620 includes a second laser generator 621. And the cylinder 622 can be vertically moved, the second laser generator 621 is located at the side of the wafer 10 to be transferred, and the laser is generated along the length of the wafer 10, and the vertically movable cylinder 622 is connected to the second laser generator. 621, for vertically moving the irradiation position of the laser to a predetermined position. The second inspection module is located above the wafer 10 for detecting the laser scattered by the wafer 10.
第二檢查模組可為光電二極體結構623。The second inspection module can be a photodiode structure 623.
參見圖9與圖11，光電二極體結構623包括支撐杆623a及多個光電二極體623b，支撐杆623a在晶圓10之移動方向的一個橫切方向上具有一段預定長度，多個光電二極體623b位於支撐杆623a下方。Referring to FIG. 9 and FIG. 11, the photodiode structure 623 includes a support rod 623a and a plurality of photodiodes 623b. The support rod 623a has a predetermined length in a transverse direction of the moving direction of the wafer 10, and a plurality of photoelectric The diode 623b is located below the support rod 623a.
每個光電二極體623b為圓形，且排列為之字形(zigzag)。光電二極體623b之間例如是沒有空間。Each of the photodiodes 623b is circular and arranged in a zigzag shape. There is no space between the photodiodes 623b, for example.
同時，轉移單元640可為位於晶圓10側部之夾鉗，且積集體與光電二極體623可彼此電性連接。因此，當晶圓10之邊緣存在裂紋或顆粒或光電二極體623偵測到雷射時，轉移單元640將接收到來自外部之驅動力，並沿另一轉移路徑c將晶圓10取出送至某一位置。At the same time, the transfer unit 640 can be a clamp located on the side of the wafer 10, and the collective and the photodiode 623 can be electrically connected to each other. Therefore, when there is a crack at the edge of the wafer 10 or the particle or the photodiode 623 detects the laser, the transfer unit 640 will receive the driving force from the outside and take the wafer 10 along the other transfer path c. To a certain location.
第二檢查模組可使用前文所述的可偵測晶圓10中裂紋或顆粒所散射出之雷射的積集體。The second inspection module can detect the accumulation of lasers scattered by cracks or particles in the wafer 10 as described above.
第一及第二檢查器610及620和轉移單元640電性連接至主控制器650。The first and second inspectors 610 and 620 and the transfer unit 640 are electrically connected to the main controller 650.
下面將詳細描述用作第一檢查器610之第一檢查模組或第二檢查器620之第二檢查模組的積集體。The accumulation of the second inspection module used as the first inspection module of the first inspector 610 or the second inspector 620 will be described in detail below.
圖13是本發明一實施例之積集體的橫截面圖。圖14 是沿圖13中線I-I’所截得之橫截面圖。圖15是展示圖13之積集體之另一內部空間實例的橫截面圖。圖16是圖13之監視模組的方塊結構圖。Figure 13 is a cross-sectional view of the accumulation of an embodiment of the present invention. Figure 14 It is a cross-sectional view taken along line I-I' in Fig. 13. Figure 15 is a cross-sectional view showing another example of the internal space of the product group of Figure 13. 16 is a block diagram of the monitoring module of FIG.
依本發明一實施例改良之積集體如下所述。The improved collective according to an embodiment of the present invention is as follows.
參見圖13，本發明一實施例之積集體包括主體100及第一光學偵測器300。Referring to FIG. 13, an accumulation group according to an embodiment of the present invention includes a main body 100 and a first optical detector 300.
主體100包括用於接收入射光(如雷射)之光入射部110、位於光入射部110相應側之光射出部120、以及位於光入射部110與光射出部120之間的漫射光射出部130，漫射光射出部130允許光入射至入射部110並漫射射出。此外，主體100具有預定內部空間。The main body 100 includes a light incident portion 110 for receiving incident light such as a laser, a light exit portion 120 located at a corresponding side of the light incident portion 110, and a diffused light exit portion between the light incident portion 110 and the light exit portion 120. 130. The diffused light emitting portion 130 allows light to be incident on the incident portion 110 and diffused and emitted. Further, the main body 100 has a predetermined internal space.
光入射部110與光射出部120可採用沿主體100縱向方向之孔的形式，且每個孔為同一預定長度。The light incident portion 110 and the light exit portion 120 may take the form of holes in the longitudinal direction of the body 100, and each of the holes is of the same predetermined length.
主體100為圓柱形。主體100之內部空間透過光入射部110暴露。The body 100 is cylindrical. The internal space of the body 100 is exposed through the light incident portion 110.
此處，主體100之內部空間可為如圖13所示之圓柱形。或者如圖15所示，主體100之內部空間可包括圓柱形之第一空間S1及位於第一空間S1相對兩側之半球形第二空間S2，且第一空間S1與第二空間S2相連通。Here, the internal space of the main body 100 may be a cylindrical shape as shown in FIG. Or, as shown in FIG. 15, the internal space of the main body 100 may include a first space S1 of a cylindrical shape and a hemispherical second space S2 located on opposite sides of the first space S1, and the first space S1 is connected to the second space S2. .
漫射光射出部130包括多個以非線性方式沿主體100之縱向方向排列的通孔，每個通孔為圓形或橢圓形。或者每個孔可為多邊形。漫射光射出部130與主體100之內部空間相連通。入射至光入射部110且經主體100之內部空間漫射的光可經由漫射光射出部130射出。The diffused light emitting portion 130 includes a plurality of through holes arranged in a non-linear manner in the longitudinal direction of the body 100, each of which is circular or elliptical. Or each hole can be a polygon. The diffused light emitting portion 130 is in communication with the internal space of the main body 100. Light incident on the light incident portion 110 and diffused through the internal space of the main body 100 can be emitted through the diffused light emitting portion 130.
根據本發明一實施例，第一光學偵測器300位於漫射光射出部130中，用於偵測入射至光入射部110、經主體100之內部空間漫射且經由漫射光射出部130射出的光通量。According to an embodiment of the invention, the first optical detector 300 is located in the diffused light emitting portion 130 for detecting incident on the light incident portion 110, diffusing through the internal space of the main body 100, and being emitted through the diffused light emitting portion 130. Luminous flux.
第一光學偵測器300電性連接至監視模組400。The first optical detector 300 is electrically connected to the monitoring module 400.
參見圖16，監視模組400包括電性連接至第一光學偵測器300之控制器410和電性連接至控制器410之顯示器420。Referring to FIG. 16, the monitoring module 400 includes a controller 410 electrically coupled to the first optical detector 300 and a display 420 electrically coupled to the controller 410.
控制器410安裝於主體100內且電性連接至第二光學偵測器200，其判定所偵測到之光通量是否處於預設光通量參考範圍內。The controller 410 is mounted in the main body 100 and electrically connected to the second optical detector 200, and determines whether the detected luminous flux is within the preset luminous flux reference range.
此處，光通量參考範圍包括用於區***紋之第一光通量參考範圍、及用於區分顆粒之第二光通量參考範圍。Here, the luminous flux reference range includes a first luminous flux reference range for distinguishing cracks and a second luminous flux reference range for distinguishing particles.
顯示器420安裝於主體100內且電性連接至控制器410，以使其可以視覺方式顯示：用於預設光通量之光通量參考範圍、以及所偵測到之光通量是否處於預設光通量參考範圍內。The display 420 is mounted in the main body 100 and electrically connected to the controller 410 so that it can be visually displayed: a reference range of the luminous flux for presetting the luminous flux, and whether the detected luminous flux is within the preset luminous flux reference range.
圖17是本發明另一實施例之積集體的透視圖。圖18是圖17之積集體的橫截面圖。圖19是圖17之監視模組的方塊結構圖。Figure 17 is a perspective view of an accumulation of another embodiment of the present invention. Figure 18 is a cross-sectional view of the collective of Figure 17. 19 is a block diagram of the monitoring module of FIG. 17.
參見圖17，本發明另一實施例之積集體包括主體100、第一光學偵測器300及第二光學偵測器200。Referring to FIG. 17, the assembly of another embodiment of the present invention includes a main body 100, a first optical detector 300, and a second optical detector 200.
此處，第一光學偵測器300與上文所述相同，第二光學偵測器200用於偵測入射至光入射部110且自主體100 內部射出至光射出部120之光。Here, the first optical detector 300 is the same as described above, and the second optical detector 200 is configured to detect incident to the light incident portion 110 and from the main body 100. The light that is internally emitted to the light emitting portion 120.
第一及第二光學偵測器300和200可各為一個光電二極體。光電二極體用於將光能轉換為電能，從而偵測光通量。The first and second optical detectors 300 and 200 can each be a photodiode. Photodiodes are used to convert light energy into electrical energy to detect luminous flux.
第一及第二光學偵測器300和200連接至監視模組400。The first and second optical detectors 300 and 200 are coupled to the monitoring module 400.
進一步而言，圖17所示之積集體包括：主體100，主體100具有光入射部110、位於光入射部110相應側之光射出部120、以及位於光入射部110與光射出部120之間的漫射光射出部130，漫射光射出部130允許光入射至光入射部110並經漫射射出，並形成預定內部空間；可卸體150，可卸體150具有一個預定長度的平行配合至主體100之內部空間的第三空間S3、位於第三空間S3相對兩側之與第三空間S3相連通之半球形狀的第四空間S4，以及輔助光入射部111、輔助光射出部121、及輔助漫射光射出部131，以便第三及第四空間S3和S4可與光入射部110及光射出部120相連通；第二光學偵測器200，用於偵測入射至光入射部110及射出至光射出部120至光通量；以及位於漫射光射出部130中之第一光學偵測器300，用於偵測漫射射出之光通量。Further, the product group shown in FIG. 17 includes a main body 100 having a light incident portion 110, a light exit portion 120 located on a corresponding side of the light incident portion 110, and between the light incident portion 110 and the light exit portion 120. The diffused light emitting portion 130 allows the light to be incident on the light incident portion 110 and is diffused to form a predetermined internal space. The detachable body 150 has a predetermined length of parallel fit to the main body. a third space S3 of the internal space of 100, a fourth space S4 of a hemispherical shape communicating with the third space S3 on opposite sides of the third space S3, and an auxiliary light incident portion 111, an auxiliary light emitting portion 121, and an auxiliary The light emitting portion 131 is diffused so that the third and fourth spaces S3 and S4 can communicate with the light incident portion 110 and the light emitting portion 120. The second optical detector 200 is configured to detect incident light to the light incident portion 110 and emit the light. The light emitting portion 120 to the light flux; and the first optical detector 300 located in the diffused light emitting portion 130 for detecting the luminous flux of the diffused light.
此處，第一光學偵測器300及第二光學偵測器200包括光電二極體。第二光學偵測器200大體上與圖12所述相同。在第一光學偵測器300中，光電二極體安裝至漫射光射出部130之圓形或橢圓形通孔。Here, the first optical detector 300 and the second optical detector 200 include a photodiode. The second optical detector 200 is substantially the same as that described in FIG. In the first optical detector 300, the photodiode is mounted to a circular or elliptical through hole of the diffused light emitting portion 130.
參見圖19，第一及第二光學偵測器300和200電性連接至監視模組400。Referring to FIG. 19, the first and second optical detectors 300 and 200 are electrically connected to the monitoring module 400.
監視模組400還包括選擇器430，用於在第一與第二光學偵測器300和200之間做選擇性切換。The monitoring module 400 also includes a selector 430 for selectively switching between the first and second optical detectors 300 and 200.
因此，第一及第二光學偵測器300和200電性連接至選擇器430，且選擇器430電性連接至控制器410，此外，控制器410電性連接至顯示器420。Therefore, the first and second optical detectors 300 and 200 are electrically connected to the selector 430, and the selector 430 is electrically connected to the controller 410. Further, the controller 410 is electrically connected to the display 420.
控制器410及顯示器420位於主體100之外圓周上。The controller 410 and the display 420 are located on the outer circumference of the body 100.
參見圖18，可卸體150包括預定長度的平行配合至主體100之內部空間的第三空間S3、位於第三空間S3相對兩側之與第三空間S3相連通之半球形狀的第四空間S4，以及輔助光入射部111、輔助光射出部121，以便第三及第四空間S3和S4可與光入射部110及光射出部120相連通.Referring to Fig. 18, the detachable body 150 includes a predetermined length of a third space S3 that is parallelly fitted to the inner space of the main body 100, and a fourth space S4 of a hemispherical shape that is connected to the third space S3 on opposite sides of the third space S3. And the auxiliary light incident portion 111 and the auxiliary light emitting portion 121, so that the third and fourth spaces S3 and S4 can communicate with the light incident portion 110 and the light exit portion 120.
此處，蓋狀的蓋體101位於主體100之一側，且以螺紋方式耦接至主體100之一側。Here, the cover-like cover 101 is located on one side of the main body 100 and is screwed to one side of the main body 100.
主體100與蓋體101各有一圓柱形內部空間。The main body 100 and the cover body 101 each have a cylindrical inner space.
此外，主體100之內壁上可形成導引突起(未圖示)，且可卸體150之外圓周上可形成導引孔(未圖示)，導引孔可在導引突起上滑動。Further, a guide protrusion (not shown) may be formed on the inner wall of the main body 100, and a guide hole (not shown) may be formed on the outer circumference of the detachable body 150, and the guide hole may slide on the guide protrusion.
圖20是展示本發明第三實施例之另一積集體實例的橫截面圖。Figure 20 is a cross-sectional view showing another example of the collective embodiment of the third embodiment of the present invention.
同時，前述積集體為與主體100相應之圓柱形，形狀似具有預定長度的圓柱體。At the same time, the aforementioned collective body is a cylindrical shape corresponding to the main body 100, and is shaped like a cylinder having a predetermined length.
或者，用作第一檢查器610之第一檢查模組的積集體 可具有如圖19所示的積集球體。Alternatively, the accumulation of the first inspection module used as the first inspector 610 There may be an accumulation sphere as shown in FIG.
積集球體包括形成預定內部空間之球形體102、形成於球形體102一側之光入射部110、形成於球形體102另一側(與光入射部110相對)之光射出部120、以及形成於球星體102中光入射部110與光射出部120之間的漫射光射出部130。The collecting sphere includes a spherical body 102 forming a predetermined internal space, a light incident portion 110 formed on one side of the spherical body 102, a light emitting portion 120 formed on the other side of the spherical body 102 (opposite the light incident portion 110), and forming The diffused light emitting portion 130 between the light incident portion 110 and the light emitting portion 120 in the star body 102.
如前所述，漫射光射出部130中可安裝第一光學偵測器300，或光入射部110與漫射光射出部130中可分別安裝第二及第一光學偵測器200和300。As described above, the first optical detector 300 may be mounted in the diffused light emitting portion 130, or the second and first optical detectors 200 and 300 may be respectively mounted in the light incident portion 110 and the diffused light emitting portion 130.
此外，第一光學偵測器300和第二光學偵測器200可電性連接至控制器410，如圖14及圖17所示。此外，控制器410電性連接至主控制器650。In addition, the first optical detector 300 and the second optical detector 200 can be electrically connected to the controller 410, as shown in FIG. 14 and FIG. Further, the controller 410 is electrically connected to the main controller 650.
同時，具有前述組態晶圓測試裝置之處理設備的運作如下文所述。Meanwhile, the operation of the processing apparatus having the aforementioned configuration wafer test apparatus is as follows.
晶圓轉移部500(如滾筒)將圖1圖2所示之晶圓沿轉移路徑a轉移至晶圓測試裝置A內。The wafer transfer portion 500 (such as a roller) transfers the wafer shown in FIG. 1 to FIG. 2 along the transfer path a into the wafer test apparatus A.
參見圖4及圖6，由檢查器600對沿轉移路徑a轉移之晶圓10進行檢查。此處，檢查器600檢查晶圓10之邊緣部份、內部及頂面是否存在裂紋及顆粒，並區***紋與顆粒。又，晶圓10之外部狀態可用視覺方式進行核查。Referring to Figures 4 and 6, the wafer 10 transferred along the transfer path a is inspected by the inspector 600. Here, the inspector 600 inspects the edge portion, the inner portion, and the top surface of the wafer 10 for cracks and particles, and distinguishes between cracks and particles. Again, the external state of the wafer 10 can be verified visually.
首先將描述使用第一檢查器610檢查晶圓10之邊緣部份的過程。First, the process of inspecting the edge portion of the wafer 10 using the first inspector 610 will be described.
參見圖5，轉移單元640將晶圓10轉移至某一位置。Referring to Figure 5, transfer unit 640 transfers wafer 10 to a location.
然後，第一雷射發生器611自晶圓10底部向晶圓10 頂部發生雷射。圖6中，第一雷射發生器611自晶圓上方向晶圓底部發射雷射。Then, the first laser generator 611 is from the bottom of the wafer 10 to the wafer 10 A laser fires at the top. In Figure 6, the first laser generator 611 emits a laser from the bottom of the wafer toward the bottom of the wafer.
穿越晶圓10之雷射入射至積集體之光入射部110。The laser light passing through the wafer 10 is incident on the light incident portion 110 of the collective.
換言之，雷射於形成行進路徑的同時自光入射部110入射至主體100之內部空間。In other words, the laser is incident from the light incident portion 110 to the internal space of the body 100 while forming the traveling path.
接著，光沿行進路徑到達與光入射部110相對的光射出部120。Then, the light reaches the light emitting portion 120 facing the light incident portion 110 along the traveling path.
因此，具有多個光電二極體(與光射出部120平行)之第一及第二光學偵測器300和200能夠偵測光通量。接著，第一及第二光學偵測器300和200將所偵測到之光通量發送至控制器410。Therefore, the first and second optical detectors 300 and 200 having a plurality of photodiodes (parallel to the light emitting portion 120) are capable of detecting the luminous flux. Next, the first and second optical detectors 300 and 200 transmit the detected luminous flux to the controller 410.
控制器410判定所偵測到之光通量是否處於預設光通量參考範圍內。The controller 410 determines whether the detected luminous flux is within the preset luminous flux reference range.
偵測到光通量時，控制器410判定晶圓10中是否存在裂紋或顆粒。When the luminous flux is detected, the controller 410 determines whether there are cracks or particles in the wafer 10.
此外，當所偵測到之光通量處於光通量參考範圍內尤其是處於第一光通量參考範圍內時，控制器410判定存在裂紋。另一方面，當所偵測到之光通量處於第二光通量參考範圍內時，控制器410判定存在顆粒。接著，控制器410將判定結果發送至主控制器650。Further, when the detected luminous flux is within the luminous flux reference range, particularly within the first luminous flux reference range, the controller 410 determines that there is a crack. On the other hand, when the detected luminous flux is within the second luminous flux reference range, the controller 410 determines that there is a particle. Next, the controller 410 transmits the determination result to the main controller 650.
另外，有電信號被發送至顯示器420，以便能以視覺方式顯示光通量參考範圍，以及所偵測到之光通量是否處於預設光通量參考範圍內。Additionally, an electrical signal is sent to display 420 to visually display the luminous flux reference range and whether the detected luminous flux is within a predetermined luminous flux reference range.
相應地，由顯示器420即可輕易看出，根據第二光學 偵測器200的偵測結果，入射至光入射部110且自光射出部120射出之光通量是否處於光通量參考範圍內。Accordingly, it can be easily seen by the display 420, according to the second optical The detection result of the detector 200 is incident on the light incident portion 110 and the luminous flux emitted from the light emitting portion 120 is within the luminous flux reference range.
同時，若入射至光入射部110之光在主體100之內部空間中被漫射，則漫射光經由位於主體100中之漫射光射出部130射出。At the same time, if the light incident on the light incident portion 110 is diffused in the internal space of the main body 100, the diffused light is emitted through the diffused light emitting portion 130 located in the main body 100.
此時，主體100內部之漫射光自半球形第二空間S2內壁反射，從而輕易導向漫射光射出部130。At this time, the diffused light inside the main body 100 is reflected from the inner wall of the hemispherical second space S2, thereby being easily guided to the diffused light emitting portion 130.
此外，攝像模組612拍攝晶圓10之頂面。In addition, the camera module 612 captures the top surface of the wafer 10.
舉例而言，光源612a照射晶圓10之底部。接著，位於晶圓10上方之攝像機612b拍攝晶圓10之受照射頂面，並將所射影像之相關資訊發送至主控制器650。For example, light source 612a illuminates the bottom of wafer 10. Next, the camera 612b located above the wafer 10 captures the illuminated top surface of the wafer 10 and transmits information about the projected image to the main controller 650.
相應地，主控制器650可儲存所射影像之相關資訊，以用於視覺方式核查晶圓10頂面之狀態。Accordingly, the main controller 650 can store information related to the projected image for visually checking the status of the top surface of the wafer 10.
同時，下面將描述第一檢查器610中採用之另一積集體的運作。Meanwhile, the operation of another accumulation group employed in the first checker 610 will be described below.
位於光射出部120中之第二光學偵測器200偵測入射至光入射部110並行進之雷射的通量。The second optical detector 200 located in the light emitting portion 120 detects the flux of the laser incident on the light incident portion 110 and traveling.
此外，位於漫射光射出部130中之第一光學偵測器300偵測主體100或可卸體150之內部空間中漫射之光通量。In addition, the first optical detector 300 located in the diffused light emitting portion 130 detects the diffused luminous flux in the internal space of the main body 100 or the detachable body 150.
此時，選擇器430藉由第二光學偵測器200與第一光學偵測器300中之至少一個電性連接至控制器410。At this time, the selector 430 is electrically connected to the controller 410 by at least one of the second optical detector 200 and the first optical detector 300.
若第二光學偵測器200與第一光學偵測器300皆連接至控制器410，則第二光學偵測器200與第一光學偵測器300可分別發送光通量與漫射光通量至控制器410。If the second optical detector 200 and the first optical detector 300 are both connected to the controller 410, the second optical detector 200 and the first optical detector 300 can respectively transmit the luminous flux and the diffused luminous flux to the controller. 410.
接著，控制器410判定所偵測到之光通量是否處於光通量參考範圍內，並判定所偵測到之漫射光通量是否處於漫射光通量參考範圍內。Next, the controller 410 determines whether the detected luminous flux is within the luminous flux reference range, and determines whether the detected diffused luminous flux is within the diffused luminous flux reference range.
若所偵測到之漫射光通量處於漫射光通量參考範圍內，尤其當所偵測到之漫射光通量處於第一光通量參考範圍內時，控制器410判定存在裂紋。另一方面，當所偵測到之漫射光通量處於第二光通量參考範圍內時，控制器410判定存在顆粒。If the detected diffused light flux is within the diffused light flux reference range, especially when the detected diffused light flux is within the first luminous flux reference range, the controller 410 determines that a crack exists. On the other hand, when the detected diffused light flux is within the second luminous flux reference range, the controller 410 determines that there is a particle.
此外，控制器410以視覺方式顯示所偵測到之光通量、預設光通量參考範圍、所偵測到之漫射光通量、以及預設漫射光通量參考範圍。控制器410亦顯示所偵測到之光通量是否處於預設光通量參考範圍內、以及所偵測到之漫射光通量是否處於預設漫射光通量參考範圍內。In addition, the controller 410 visually displays the detected luminous flux, the preset luminous flux reference range, the detected diffused luminous flux, and the preset diffused luminous flux reference range. The controller 410 also displays whether the detected luminous flux is within the preset luminous flux reference range and whether the detected diffused luminous flux is within the preset diffused luminous flux reference range.
相應地，當第二光學偵測器200所偵測到之光通量超過光通量參考範圍時，或當漫射光通量超過漫射光通量參考範圍時，可認為晶圓10之邊緣存在裂紋或顆粒。此處，區***紋與顆粒之方法如前所述，因此不再贅述。Accordingly, when the luminous flux detected by the second optical detector 200 exceeds the luminous flux reference range, or when the diffused luminous flux exceeds the diffused luminous flux reference range, cracks or particles may be considered to be present at the edge of the wafer 10. Here, the method of distinguishing between cracks and particles is as described above, and therefore will not be described again.
藉由顯示器420可輕易看見，根據第二光學偵測器200之偵測結果，入射至光入射部110且自光射出部120射出之光通量是否處於光通量參考範圍內，以及漫射光通量是否處於漫射光通量參考範圍內。It can be easily seen by the display 420, according to the detection result of the second optical detector 200, whether the light flux incident on the light incident portion 110 and emitted from the light exit portion 120 is within the light flux reference range, and whether the diffused light flux is in the diffuse The luminous flux is within the reference range.
如前所述，若晶圓10中存在裂紋或顆粒，控制器410將發送電信號至主控制器650，並控制轉移單元640拾起晶圓10並將其沿轉移路徑c(如圖1至圖3所示)取出。As previously mentioned, if there are cracks or particles in the wafer 10, the controller 410 will send an electrical signal to the main controller 650 and control the transfer unit 640 to pick up the wafer 10 and move it along the transfer path c (see Figure 1). Figure 3) is taken out.
另一方面，若所偵測到之光通量處於光通量參考範圍內，或所偵測到之漫射光通量處於漫射光通量參考範圍內，則控制器將判定晶圓10之邊緣中不存在裂紋或顆粒，從而晶圓10將沿轉移路徑a被送入圖1之處理腔室PC、圖2之運送器20以及圖3之負載鎖定腔室LLC1、LLC2。相應地，晶圓10被送入轉移腔室TC及多個處理腔室PC1...PC4，繼而進行一組製程。On the other hand, if the detected luminous flux is within the luminous flux reference range, or the detected diffused luminous flux is within the diffused luminous flux reference range, the controller will determine that there are no cracks or particles in the edge of the wafer 10. Thus, the wafer 10 will be fed along the transfer path a into the processing chamber PC of FIG. 1, the carrier 20 of FIG. 2, and the load lock chambers LLC1, LLC2 of FIG. Accordingly, the wafer 10 is fed into the transfer chamber TC and the plurality of processing chambers PC1...PC4, which in turn performs a set of processes.
接著，下面將描述本發明一實施例之第二檢查器620之運作。Next, the operation of the second checker 620 of an embodiment of the present invention will be described below.
參見圖5及圖6，主控制器650發送信號之驅動器660，且驅動器660調節可垂直移動圓柱622之垂直位置，從而改變第二雷射發生器621之設定位置。Referring to Figures 5 and 6, the main controller 650 transmits a signal driver 660, and the driver 660 adjusts the vertical position of the vertically movable cylinder 622 to change the set position of the second laser generator 621.
於此設定位置處時，第二雷射發生器621發射之直線束沿晶圓10之頂面行進，或沿長度方向穿越晶圓10。At the set position, the linear beam emitted by the second laser generator 621 travels along the top surface of the wafer 10 or traverses the wafer 10 along the length.
圖10圖示前種情形，沿晶圓10之頂面行進之雷射被頂面上存在之顆粒散射或反射，接著被作為第二檢查模組之位於晶圓10上方之光電二極體結構623偵測到。因此，光電二極體結構623偵測到預定光通量。Figure 10 illustrates the former case where a laser traveling along the top surface of the wafer 10 is scattered or reflected by particles present on the top surface, and then used as a second inspection module for the photodiode structure above the wafer 10. 623 detected. Therefore, the photodiode structure 623 detects a predetermined luminous flux.
於此情況下，光電二極體結構623之光電二極體623b發送電信號至主控制器650，且主控制器650驅動轉移單元640使之沿另一轉移路徑c取出晶圓10。In this case, the photodiode 623b of the photodiode structure 623 transmits an electrical signal to the main controller 650, and the main controller 650 drives the transfer unit 640 to take the wafer 10 along the other transfer path c.
圖12圖示後種情形，沿晶圓10之長度方向穿越晶圓10之雷射被晶圓10中之外來物質漫射或反射，接著被位於晶圓10上方之光電二極體623b偵測到。Figure 12 illustrates the latter case where a laser traversing wafer 10 along the length of wafer 10 is diffused or reflected by foreign matter in wafer 10 and then detected by photodiode 623b located above wafer 10. To.
於此情況下，光電二極體623b發送電信號至主控制器650，且主控制器650驅動轉移單元640使之沿另一轉移路徑c取出晶圓10。In this case, the photodiode 623b transmits an electrical signal to the main controller 650, and the main controller 650 drives the transfer unit 640 to take the wafer 10 along another transfer path c.
當圓柱形積集體被用作第二檢查模組時，若光射出部130之第一光學偵測器300和光射出部120之第二光學偵測器200偵測到晶圓10所散射出之光，則控制器410判定晶圓10中是否存在裂紋或顆粒，藉此如前所述取出晶圓10。When the cylindrical assembly is used as the second inspection module, if the first optical detector 300 of the light emitting portion 130 and the second optical detector 200 of the light emitting portion 120 detect the scattering of the wafer 10 In the light, the controller 410 determines whether cracks or particles are present in the wafer 10, thereby taking out the wafer 10 as previously described.
此處，區***紋與顆粒的方法與前文所述相同。Here, the method of distinguishing cracks from particles is the same as described above.
本發明能有效檢查待送入一組製程之晶圓的品質(是否存在裂紋或顆粒)，從而判定是否應將晶圓送入處理腔室或後續此組製程、或是將晶圓自其中取出。The invention can effectively check the quality of the wafer to be sent to a set of processes (whether there are cracks or particles), thereby determining whether the wafer should be sent into the processing chamber or the subsequent set of processes, or the wafer is taken out therefrom .
本發明亦能於改良積集體被置於基板邊緣附近且有雷射射至基板邊緣部份時，有效且容易地檢查基板邊緣以偵測由積集體而穿越基板之雷射的光通量。The present invention can also effectively and easily inspect the edge of the substrate to detect the luminous flux of the laser passing through the substrate by the collective when the improved collective is placed near the edge of the substrate and the laser is incident on the edge portion of the substrate.
此外，本發明亦能有效地沿基板之長度方向或頂面發射直線束，從而檢查晶圓內部或頂面之品質。In addition, the present invention can also effectively emit a linear beam along the length direction or the top surface of the substrate, thereby checking the quality of the inside or the top surface of the wafer.
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何所屬技術領域中具有通常知識者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and refinements without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.
A‧‧‧晶圓測試裝置A‧‧‧ wafer tester
a、c‧‧‧轉移路徑a, c‧‧‧ transfer path
PC‧‧‧處理腔室PC‧‧‧Processing chamber
10‧‧‧晶圓10‧‧‧ wafer
20‧‧‧運送器20‧‧‧Carrier
100‧‧‧主體100‧‧‧ Subject
101‧‧‧蓋體101‧‧‧ cover
102‧‧‧球形體102‧‧‧Spherical body
110、111‧‧‧光入射部110, 111‧‧‧Light incident section
120、121‧‧‧光射出部120, 121‧‧‧Lighting Department
130、131‧‧‧漫射光射出部130, 131‧‧‧Diffuse light injection
150‧‧‧可卸體150‧‧‧Removable body
200‧‧‧第二光學偵測器200‧‧‧Second optical detector
300‧‧‧第一光學偵測器300‧‧‧First optical detector
400‧‧‧監視模組400‧‧‧Monitor module
410‧‧‧控制器410‧‧‧ Controller
420‧‧‧顯示器420‧‧‧ display
430‧‧‧選擇器430‧‧‧Selector
500‧‧‧晶圓轉移部500‧‧‧ Wafer Transfer Department
511‧‧‧傳送帶511‧‧‧Conveyor belt
512‧‧‧滾筒512‧‧‧Roller
600‧‧‧檢查器600‧‧‧Checker
610‧‧‧第一檢查器610‧‧‧First Inspector
611‧‧‧第一雷射發生器611‧‧‧First Laser Generator
612‧‧‧攝像模組612‧‧‧ camera module
612a‧‧‧光源612a‧‧‧Light source
612b‧‧‧攝像機612b‧‧‧Camera
620‧‧‧第二檢查器620‧‧‧Second inspector
621‧‧‧第二雷射發生器621‧‧‧second laser generator
622‧‧‧可垂直移動圓柱622‧‧‧ can move the cylinder vertically
623‧‧‧光電二極體結構623‧‧‧Photodiode structure
623a‧‧‧支撐杆623a‧‧‧Support rod
623b‧‧‧光電二極體623b‧‧‧Photoelectric diode
640‧‧‧轉移單元640‧‧‧Transfer unit
650‧‧‧主控制器650‧‧‧Master Controller
660‧‧‧驅動器660‧‧‧ drive
700‧‧‧光學系統700‧‧‧Optical system
710‧‧‧聚光透鏡710‧‧‧ Concentrating lens
720‧‧‧光電二極體720‧‧‧Photoelectric diode
圖1說明具有本發明一實施例之晶圓測試裝置的處理 設備。1 illustrates the processing of a wafer testing apparatus having an embodiment of the present invention device.
圖2說明具有本發明另一實施例之晶圓測試裝置的處理設備。2 illustrates a processing apparatus having a wafer testing apparatus according to another embodiment of the present invention.
圖3說明具有本發明第三實施例之晶圓測試裝置的處理設備。Figure 3 illustrates a processing apparatus having a wafer testing apparatus according to a third embodiment of the present invention.
圖4是說明本發明一實施例之晶圓測試裝置中之檢查器及傳送帶型晶圓運送器之佈局的平面視圖。4 is a plan view showing the layout of an inspector and a conveyor type wafer carrier in a wafer testing apparatus according to an embodiment of the present invention.
圖5說明本發明一實施例之晶圓測試裝置。Figure 5 illustrates a wafer testing apparatus in accordance with one embodiment of the present invention.
圖6展示圖5之積集體之一不同佈局。Figure 6 shows a different layout of one of the collectives of Figure 5.
圖7說明本發明另一實施例之晶圓測試裝置。Figure 7 illustrates a wafer testing apparatus in accordance with another embodiment of the present invention.
圖8展示圖7之光學系統之一不同佈局。Figure 8 shows a different layout of one of the optical systems of Figure 7.
圖9展示圖5之第二檢查器。Figure 9 shows the second inspector of Figure 5.
圖10說明圖9之第二檢查器之運作方式。Figure 10 illustrates the operation of the second inspector of Figure 9.
圖11是本發明一實施例之光電二極體結構。Figure 11 is a diagram showing the structure of a photodiode according to an embodiment of the present invention.
圖12說明圖9之第二檢查器之另一運作方式。Figure 12 illustrates another mode of operation of the second inspector of Figure 9.
圖13是本發明一實施例之積集體的橫截面圖。Figure 13 is a cross-sectional view of the accumulation of an embodiment of the present invention.
圖14是沿圖13中線I-I’所截得之橫截面圖。Figure 14 is a cross-sectional view taken along line I-I' of Figure 13 .
圖15是展示圖13之積集體之另一內部空間實例的橫截面圖。Figure 15 is a cross-sectional view showing another example of the internal space of the product group of Figure 13.
圖16是圖13之監視模組的方塊結構圖。16 is a block diagram of the monitoring module of FIG.
圖17是本發明另一實施例之積集體的透視圖。Figure 17 is a perspective view of an accumulation of another embodiment of the present invention.
圖18是圖17之積集體的橫截面圖。Figure 18 is a cross-sectional view of the collective of Figure 17.
圖19是圖17之監視模組的方塊結構圖。19 is a block diagram of the monitoring module of FIG. 17.
圖20是展示本發明第三實施例之另一積集體實例的 橫截面圖。Figure 20 is a diagram showing another example of the collective embodiment of the third embodiment of the present invention. Cross-sectional view.
10‧‧‧晶圓10‧‧‧ wafer
A‧‧‧晶圓測試裝置A‧‧‧ wafer tester
a、c‧‧‧轉移路徑a, c‧‧‧ transfer path
PC‧‧‧處理腔室PC‧‧‧Processing chamber
Claims (26)
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| DE102009050711A1 (en) | 2009-10-26 | 2011-05-05 | Schott Ag | Method and device for detecting cracks in semiconductor substrates |
| KR102044788B1 (en) * | 2012-10-30 | 2019-11-18 | 삼성디스플레이 주식회사 | Inspection Apparatus for Glass substrate |
| KR101514031B1 (en) * | 2014-04-28 | 2015-04-22 | 이성수 | Shield Box |
| WO2015168282A1 (en) | 2014-04-29 | 2015-11-05 | Pleotint, L.L.C. | Absorbing solar control interlayers |
| CN103972126A (en) * | 2014-05-21 | 2014-08-06 | 上海华力微电子有限公司 | Method for preventing silicon wafers from being broken |
| WO2016162406A1 (en) * | 2015-04-07 | 2016-10-13 | Albert-Ludwigs-Universität Freiburg | Device for detecting electronic defects in the edge region of silicon-based semiconductors |
| KR101990639B1 (en) * | 2017-11-08 | 2019-06-18 | 주식회사 테스 | Substrate inspection method and Substrate processing apparatus |
| WO2020174990A1 (en) * | 2019-02-28 | 2020-09-03 | 吉野石膏株式会社 | Inspection device for plate-like body |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020046829A (en) * | 2000-12-15 | 2002-06-21 | 윤종용 | Apparatus for inspecting wafer |
| KR100445457B1 (en) * | 2002-02-25 | 2004-08-21 | 삼성전자주식회사 | Apparatus and method for inspecting wafer backside |
| KR100596048B1 (en) * | 2002-07-08 | 2006-07-03 | 삼성코닝정밀유리 주식회사 | System for inspecting edge of glass substrate |
| JP4298238B2 (en) * | 2002-08-27 | 2009-07-15 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing system |
| US7366344B2 (en) | 2003-07-14 | 2008-04-29 | Rudolph Technologies, Inc. | Edge normal process |
| US7968859B2 (en) | 2003-07-28 | 2011-06-28 | Lsi Corporation | Wafer edge defect inspection using captured image analysis |
-
2008
- 2008-05-19 WO PCT/KR2008/002795 patent/WO2009125896A1/en active Application Filing
- 2008-05-19 CN CN2008801285260A patent/CN101990706A/en active Pending
- 2008-05-26 TW TW097119396A patent/TWI388021B/en not_active IP Right Cessation
- 2008-11-21 KR KR1020080116286A patent/KR101060712B1/en active IP Right Grant
Also Published As
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|---|---|
| KR20090107400A (en) | 2009-10-13 |
| KR101060712B1 (en) | 2011-08-30 |
| CN101990706A (en) | 2011-03-23 |
| TW200943447A (en) | 2009-10-16 |
| WO2009125896A1 (en) | 2009-10-15 |
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