CN101990706A - Wafer testing apparatus and processing equipment having the same - Google Patents
Wafer testing apparatus and processing equipment having the same Download PDFInfo
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- CN101990706A CN101990706A CN2008801285260A CN200880128526A CN101990706A CN 101990706 A CN101990706 A CN 101990706A CN 2008801285260 A CN2008801285260 A CN 2008801285260A CN 200880128526 A CN200880128526 A CN 200880128526A CN 101990706 A CN101990706 A CN 101990706A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9503—Wafer edge inspection
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
Abstract
The present invention provides a wafer testing apparatus. The wafer testing apparatus includes a wafer transferring part which transfers a wafer along a transfer path, and is placed near an edge of the wafer to be transferred, inspects whether a crack or a particle exists in the edge of the wafer, and distinguishes between the crack and the particle. There is provided an inspector for taking out the wafer to another transfer path if there exists the crack or the particle. Further, the present invention provides processing equipment having the wafer testing apparatus, which can inspect qualities of a wafer to be introduced into a series of processes and determine whether to introduce or take out the wafer into or from a processing chamber or the next series of processes according to results from inspecting the qualities.
Description
Technical field
The present invention has and relates to a kind of treatment facility, particularly relate to a kind of wafer tester as described below and treatment facility with this device, described wafer tester can be checked the quality of the wafer that is about to send into one group of processing procedure, and according to the quality examination result judge whether wafer should be sent into treatment chamber or next group processing procedure or with wafer from wherein taking out.
Background technology
Usually Thin Film Transistor-LCD comprises the lower glass substrate of formation thin-film transistor on it, forms the top glass substrate of colored filter and the liquid crystal between lower glass substrate and top glass substrate on it.
Be used to shelve the described glass substrate of thin-film transistor and colored filter when carrying out a row processing, its edge will be impaired to some extent, therefore impaired or when having the described glass substrate of other damage situations to enter next processing procedure or treatment chamber when the edge, following problem can appear, that is, glass substrate is in chamber or may be cracked at the place, a certain space near next processing procedure.
Usually, its recovery will be very consuming time.
In addition, visual inspection is a conventional method of checking the substrate state.
If only come the edge of sight glass substrate impaired or other damage situations (as crackle) is arranged, then the foreign substance on the substrate (as particle) can be thought by mistake be impaired, and it can be removed in the processing procedure and is removed originally in next by visual inspection.
Equally, when cracked glass or from outside or inner particle adhesion during in the glass substrate end face, broken glass etc. will be damaged the equipment that uses in the successive process.
Based on above-mentioned cause, the running time of equipment will prolong, and the maintenance of equipment, repair cost will be risen.
Therefore, conventional method is, to the glass substrate in the treatment chamber, apply utilize plasma processing procedure (as deposition, etching, sputter) before, check the fundamental characteristics of glass substrate earlier.
Yet, the tradition inspection of glass baseplate surface is to use visual inspection.Therefore, crackle and intergranular differentiation are not strict.Remain in addition in another problem, need vision camera when promptly checking metal on the glass baseplate surface or broken glass.
Since distinguish between crackle on the substrate and particle not obvious, conventional method even will detect the particle that originally can fully be removed.Therefore, detection can not correctly be carried out.
Therefore, recently the demands of developing to various technology grows with each passing day, thereby judged whether glass substrate end face and edge exist crackle or particle, and before glass substrate being sent into the treatment chamber of carrying out one group of processing procedure place or being sent into next processing procedure, distinguished described crackle and particle.
Summary of the invention
The present invention is intended to address the above problem, and target of the present invention provides a kind of wafer tester as described below and the treatment facility of this device of tool, this wafer tester can be checked the quality (whether having crackle or particle) of the wafer that is about to send into one group of processing procedure, and according to the quality examination result judge whether wafer should be sent into treatment chamber or follow-up this group processing procedure or with wafer from wherein taking out.
Another target of the present invention provides a kind of wafer tester as described below and the treatment facility with this device, this wafer tester can be in improvement conglomerate (integrating body) near the edge of substrate and when Laser emission is arranged to the edge part of substrate, easily check the edge of substrate, so that detect the light quantity of passing through the laser of substrate by conglomerate.
Another target of the present invention provides a kind of wafer tester as described below and the treatment facility with this device, and this wafer tester can be along the length direction or the end face emitting linear bundle of substrate, thereby checks the quality of wafer inside or end face.
According to an aspect of the present invention, a kind of wafer tester can comprise: wafer transfer portion, and it shifts wafer along a transfer path; And near the detector in edge that is positioned at wafer to be transferred, whether its edge of checking wafer exists crackle or particle, and distinguishes crackle and particle.
Detector can comprise first detector and second detector, and first detector comprises: be positioned at first laser generator of the below, edge of wafer, be used to launch laser; Be positioned at wafer edge top first check module, be used to judge whether the edge of wafer exists crackle or particle, and detect the amount of the emitted laser of the opposite side that passes through crystal round fringes, thereby distinguish crackle and particle by incident; And the photographing module that is used to take the outer surface of wafer, and second detector comprises: is positioned at second laser generator of wafer sidepiece to be transferred, is used for length direction emission laser along wafer; What be connected to second laser generator can vertical mobile cylinder, is used for the irradiation position of laser is moved vertically to certain position; And the second inspection module that is positioned at the wafer top, be used to detect the laser that wafer scatters.
Detector can comprise buanch unit, and buanch unit is electrically connected to first and second and checks module, and when existing crackle or second to check that module detects laser in the wafer, buanch unit takes out wafer along another transfer path.
First checks that module can be a conglomerate that comprises main body as described below, this main body comprises light incident section (light incident part), the light outgoing portion (light exit part) relative with the light incident section, and the diffused light outgoing portion between light incident section and light outgoing portion (diffused-light exit part), the light that diffused light outgoing portion allows to be incident to the light incident section penetrates through diffusion, and the predetermined inner space of formation, provide first fluorescence detector in the diffused light outgoing portion, be used to detect the diffusion light quantity, provide second fluorescence detector in the light outgoing portion, be used to detect the amount of the light that is incident to the light incident section and penetrates via light outgoing portion, and there is monitor module to be electrically connected to first and second fluorescence detector, be used for judging and whether have crackle and particle, and based on detected light quantity differentiation crackle and particle, and photographing module can comprise the light source that is positioned at wafer one side, be used to shine wafer, and the position for video camera is arranged in the wafer opposite side, be used to take the outer surface of wafer.
First checks that module can be the optical system that comprises lens and photodiode, and lens are positioned at by the wafer, are used for convergent laser, and photodiode is positioned at by the lens, is used for the amount of detection laser.
Main body can be cylindrical.
Second checks that module can be positioned at the wafer top, and comprises a plurality of photodiodes.
Second checks that module can be a conglomerate that comprises main body as described below, this main body comprises the light incident section, the light outgoing portion relative with the light incident section, and the diffused light outgoing portion between light incident section and light outgoing portion, the light that diffused light outgoing portion allows to be incident to the light incident section penetrates through diffusion, and the predetermined inner space of formation, provide first fluorescence detector in the diffused light outgoing portion, be used to detect the diffusion light quantity, provide second fluorescence detector in the light outgoing portion, be used to detect the amount of the light that is incident to the light incident section and penetrates via light outgoing portion, and there is monitor module to be electrically connected to first and second fluorescence detector, be used for judging whether have crackle and particle, and distinguish crackle and particle based on detected light quantity.
The inner space can comprise second space that has first space of predetermined length and parallel formation and be positioned at the semi-spherical shape of relative both sides, first space, second space is connected with first space, and first and second space is connected with light incident section and light outgoing portion.
Light incident section and light outgoing portion can respectively comprise the hole of equal length, and the hole is to form with the length direction of linear mode along main body, and diffused light outgoing portion can comprise a plurality of with the through hole of nonlinear way along the length direction formation of main body.
Main body can comprise detachable body, and in order to be engaged to the inner space, detachable body comprises: the 3rd space with predetermined length and parallel formation; Be positioned at the 4th space of the semi-spherical shape of relative both sides, the 3rd space, the 4th space is connected with the 3rd space; And fill-in light incident section and fill-in light outgoing portion, the 3rd and the 4th space is via fill-in light incident section and fill-in light outgoing portion and be connected with light incident section and light outgoing portion.
First fluorescence detector and second fluorescence detector can comprise photodiode.
Monitor module can comprise: be installed on the controller in the main body, it is electrically connected to first and second fluorescence detector, be used to judge whether detected light quantity is in the quantity of reference light therefor scope, judge whether detected diffusion light quantity is in reference in the diffused light weight range, judge whether have crackle or particle, and distinguish crackle and particle; And be installed on display in the main body, it is electrically connected to controller, be used for showing following content: be the default quantity of reference light therefor scope of detected light quantity with visual manner, whether detected light quantity is in the quantity of reference light therefor scope, be the default reference diffused light weight range of detected diffusion light quantity, and whether detected diffusion light quantity is in reference in the diffused light weight range, wherein, the quantity of reference light therefor scope comprises the first quantity of reference light therefor scope that is used to distinguish crackle, and be used for the second quantity of reference light therefor scope of distinguishing particles, and wherein with reference to the diffused light weight range comprise be used to distinguish crackle first with reference to the diffused light weight range, and be used for distinguishing particles second with reference to the diffused light weight range.
According to another aspect of the present invention, a kind of treatment facility of tool wafer tester can comprise: chamber, and its inside is formed with the transfer path of wafer; The position is used for wafer is transferred to chamber along transfer path near the wafer transfer portion of chamber; And wafer tester, comprising near the detector in edge that is positioned at wafer to be transferred, detector checks whether the edge of wafer exists crackle or particle, distinguishes crackle and particle, and takes out wafer along another transfer path.
Detector can comprise first detector and second detector, and first detector comprises: be positioned at first laser generator of the below, edge of wafer, be used to launch laser; Be positioned at wafer edge top first check module, be used to judge whether the edge of wafer exists crackle or particle, and detect the amount of the emitted laser of the opposite side that passes through crystal round fringes, thereby distinguish crackle and particle by incident; And the photographing module that is used to take the outer surface of wafer, and second detector comprises: is positioned at second laser generator of wafer sidepiece to be transferred, is used for length direction emission laser along wafer; What be connected to second laser generator can vertical mobile cylinder, is used for the irradiation position of laser is moved vertically to certain position; And the second inspection module that is positioned at the wafer top, be used to detect the laser that wafer scatters.
Detector can comprise buanch unit, and buanch unit is electrically connected to first and second and checks module, and when existing crackle or second to check that module detects laser in the wafer, buanch unit takes out wafer along another transfer path.
First checks that module can be a conglomerate that comprises main body as described below, this main body comprises the light incident section, the light outgoing portion relative with the light incident section, and the diffused light outgoing portion between light incident section and light outgoing portion, the light that diffused light outgoing portion allows to be incident to the light incident section penetrates through diffusion, and the predetermined inner space of formation, provide first fluorescence detector in the diffused light outgoing portion, be used to detect the diffusion light quantity, provide second fluorescence detector in the light outgoing portion, be used to detect the light quantity that is incident to the light incident section and penetrates via light outgoing portion, and there is monitor module to be electrically connected to first and second fluorescence detector, be used for judging and whether have crackle and particle, and based on detected light quantity differentiation crackle and particle, and photographing module can comprise the light source that is positioned at wafer one side, be used to shine wafer, and the position for video camera is arranged in the wafer opposite side, be used to take the outer surface of wafer.
First checks that module can be the optical system that comprises lens and photodiode, and lens are positioned at by the wafer, are used for convergent laser, and photodiode is positioned at by the lens, is used for the amount of detection laser.
Main body can be cylindrical.
Second checks that module can be positioned at the wafer top, and comprises a plurality of photodiodes.
Second checks that module can be a conglomerate that comprises main body as described below, this main body comprises the light incident section, the light outgoing portion relative with the light incident section, and the diffused light outgoing portion between light incident section and light outgoing portion, the light that diffused light outgoing portion allows to be incident to the light incident section penetrates through diffusion, and the predetermined inner space of formation, provide first fluorescence detector in the diffused light outgoing portion, be used to detect the diffusion light quantity, provide second fluorescence detector in the light outgoing portion, be used to detect the light quantity that is incident to the light incident section and penetrates via light outgoing portion, and there is monitor module to be electrically connected to first and second fluorescence detector, be used for judging whether have crackle and particle, and distinguish crackle and particle based on detected light quantity.
The inner space can comprise second space that has first space of predetermined length and parallel formation and be positioned at the semi-spherical shape of relative both sides, first space, second space is connected with first space, and first and second space can be connected with light incident section and light outgoing portion.
Light incident section and light outgoing portion can respectively comprise the hole of equal length, and the hole is to form with the length direction of linear mode along main body, and diffused light outgoing portion comprises a plurality of with the through hole of nonlinear way along the length direction formation of main body.
Main body can comprise detachable body, and in order to be engaged to the inner space, detachable body comprises: the 3rd space with predetermined length and parallel formation; Be positioned at the 4th space of the semi-spherical shape of relative both sides, the 3rd space, the 4th space is connected with the 3rd space; And fill-in light incident section and fill-in light outgoing portion, the 3rd and the 4th space is via fill-in light incident section and fill-in light outgoing portion and be connected with light incident section and light outgoing portion.
First fluorescence detector and second fluorescence detector can comprise photodiode.
Monitor module can comprise: be installed on the controller in the main body, it is electrically connected to first and second fluorescence detector, be used to judge whether detected light quantity is in the quantity of reference light therefor scope, judge whether detected diffusion light quantity is in reference in the diffused light weight range, judge whether have crackle or particle, and distinguish crackle and particle; And be installed on display in the main body, it is electrically connected to controller, be used for showing following content: be the default quantity of reference light therefor scope of detected light quantity with visual manner, whether detected light quantity is in the quantity of reference light therefor scope, be the default reference diffused light weight range of detected diffusion light quantity, and whether detected diffusion light quantity is in reference in the diffused light weight range, wherein, the quantity of reference light therefor scope comprises the first quantity of reference light therefor scope that is used to distinguish crackle, and be used for the second quantity of reference light therefor scope of distinguishing particles, and wherein with reference to the diffused light weight range comprise be used to distinguish crackle first with reference to the diffused light weight range, and be used for distinguishing particles second with reference to the diffused light weight range.
Description of drawings
Fig. 1 illustrates the treatment facility that has wafer tester according to an embodiment of the invention.
Fig. 2 illustrates the treatment facility that has wafer tester according to another embodiment of the present invention.
Fig. 3 illustrates the treatment facility with wafer tester according to third embodiment of the invention.
Fig. 4 illustrates the vertical view of the layout of detector in the wafer tester according to an embodiment of the invention and conveyor-type wafer conveyer.
Fig. 5 illustrates wafer tester according to an embodiment of the invention.
Fig. 6 illustrates the different conglomerate layout of layout with the conglomerate of Fig. 5.
Fig. 7 illustrates wafer tester according to another embodiment of the present invention.
Fig. 8 shows the different layout of layout with the optical system of Fig. 7.
Second detector in Fig. 9 exploded view 5.
Figure 10 illustrates the function mode of second detector of Fig. 9.
Figure 11 is a photoelectric diode structure according to an embodiment of the invention.
Figure 12 illustrates another function mode of second detector of Fig. 9.
Figure 13 is the perspective view of conglomerate according to an embodiment of the invention.
Figure 14 is the sectional view that is intercepted along Figure 13 center line I-I '.
Figure 15 is the sectional view of another example of inner space of showing the conglomerate of Figure 13.
Figure 16 is the block diagram of the monitor module of Figure 13.
Figure 17 is the perspective view of conglomerate according to another embodiment of the present invention.
Figure 18 is the sectional view of the conglomerate of Figure 17.
Figure 19 is the block diagram of the monitor module of Figure 17.
Figure 20 is the sectional view of showing according to another conglomerate example of third embodiment of the invention.
[primary clustering symbol description]
A: wafer tester
A, c: transfer path
PC: treatment chamber
10: wafer
20: conveyer
100: main body
101: lid
102: spherical
110,111: the light incident section
120,121: light outgoing portion
130,131: diffused light outgoing portion
150: detachable body
200: the second fluorescence detectors
300: the first fluorescence detectors
400: monitor module
410: controller
420: display
430: selector
500: wafer transfer portion
511: conveyer belt
512: cylinder
600: detector
610: the first detectors
611: the first laser generators
612: photographing module
612a: light source
612b: camera
620: the second detectors
621: the second laser generators
622: can vertical mobile cylinder
623: photoelectric diode structure
623a: support bar
623b: photodiode
640: buanch unit
650: master controller
660: driver
700: optical system
710: convergent lens
720: photodiode
Embodiment
The wafer tester and the treatment facility of embodiments of the invention are described below in conjunction with accompanying drawing.
Fig. 1 explanation has the treatment facility of wafer tester according to an embodiment of the invention.
The wafer tester A of embodiments of the invention comprises: wafer transfer portion 500 is used for shifting wafer 10 along transfer path a; Be positioned near the detector 600 in edge of wafer 10, be used to check whether the edge of wafer 10 exists crackle and particle, and when having crackle or particle, take out wafer 10 along another transfer path c.
As shown in Figure 1, the wafer tester A with this configuration is placed in by treatment chamber (processing chamber) PC, and carries out one group of processing procedure in herein.Wafer 10 can be sent into treatment chamber PC along transfer path a.
Fig. 2 illustrates the treatment facility that has wafer tester according to another embodiment of the present invention.
As shown in Figure 2, the wafer tester A with above-mentioned configuration is positioned near the conveyer 20, and described conveyer 20 loaded before or after carrying out this group processing procedure.Wafer 10 can be sent into conveyer 20 along transfer path a.
Fig. 3 illustrates the treatment facility with wafer tester according to third embodiment of the invention.
Referring to Fig. 3, transfer chamber (transfer chamber) TC is positioned at the center, and a plurality of treatment chamber PC1, PC2, PC3 and PC4 are positioned at around the transfer chamber TC.Treatment chamber PC1, PC2, PC3 and PC4 are connected with transfer chamber TC via gate valve (gate valve) GV.
In addition, transfer robot arm (transfer robot) RB is installed in the transfer chamber TC, is used for wafer 10 (as glass substrate) being sent into a plurality of treatment chamber PC1, PC2, PC3 and PC4 in regular turn or wherein taking out certainly.
In addition, transfer chamber TC is connected with at least one load lock chamber (load lock chamber) LLC1, LLC2.The space that load lock chamber LLC1, LLC2 stopped with standby state before being transferred to transfer chamber TC as the wafer 10 that will be transferred.
Simultaneously, load lock chamber LLC1, LLC2 are connected to wafer tester A and coupled logical.Wafer tester A forms transfer path a, and wafer 10 is transferred to load lock chamber LLC1, LLC2 through this transfer path a.
Therefore, wafer 10 can be sent into load lock chamber LLC1, LLC2 along transfer path a.In addition, wafer tester A forms another transfer path c, and wafer is removed through this transfer path c and delivers to the precalculated position.
Fig. 4 is the vertical view that the layout of detector in the wafer tester according to an embodiment of the invention and conveyor-type wafer conveyer is shown.Fig. 5 and Fig. 6 illustrate wafer tester according to an embodiment of the invention.
Fig. 1 of the present invention is described to wafer tester embodiment illustrated in fig. 3 below in conjunction with Fig. 4 to Fig. 6.
As shown in Figure 5, wafer tester A comprises wafer transfer portion 500 and detector 600, wafer transfer portion 500 is used for along transfer path a wafer 10 being transferred to the treatment chamber PC of Fig. 1, conveyer 20 among Fig. 2 or load lock chamber LLC1, the LLC2 among Fig. 3, and detector 600 is used to check whether the edge of wafer 10 exists crackle or particle, differentiation crackle and particle and take out wafer 10 along another transfer path c when having crackle.
Referring to Fig. 4 and Fig. 5, as example, wafer transfer portion 500 adopts the form of conveyer belt.
Perhaps, can realize wafer transfer portion 500, as long as it can shift wafer 10 along transfer path a with different device.
According to an aspect of the present invention, detector 600 can comprise first detector 610 and second detector 620.
Perhaps, each detector 600 can comprise the first independent detector 610 or second detector 620.
In addition, detector 600 can comprise buanch unit 640.Herein, buanch unit 640 can be a kind of transfer device, for example can pick up wafer 10 and with its manipulator or clamp that takes out along another transfer path c.
The concrete configuration of detector 600 sees below.
As shown in Figure 4, first detector 610 is positioned near the edge of wafer 10.In addition, second detector 620 is positioned at sidepiece or the top of the transfer path a of wafer 10.
Fig. 5 illustrates the wafer tester of embodiments of the invention.Fig. 6 shows the layout of conglomerate of the layout of the conglomerate be different from Fig. 5.
Referring to Fig. 5, first detector 610 comprises that being positioned at first laser generator 611 and first that wafer 10 edges belows is used to launch laser checks module, photographing module 612.
First checks that module can place top, wafer 10 edges, and receives the incident laser at the edge that passes through wafer 10.So, can detect light quantity, thereby whether the edge of decidable wafer 10 exists crackle or particle, and distinguishes crackle and particle to the emitted laser of a side corresponding with incoming position.
Photographing module 612 can place wafer 10 above or below, and comprise light source 612a and camera 612b, light source 612a is used to shine a side of wafer 10, camera 612b is used to take a side of the wafer 10 that is shone by light source 612a.
For example, light source 612a can place wafer 10 belows, and camera 612b can place wafer 10 tops.
Perhaps, referring to Fig. 6, first laser generator 611 can place top, wafer 10 edges, and first checks that module can place below, wafer 10 edges.
Herein, Fig. 5 and the first inspection module shown in Figure 6 are columniform conglomerate.Selectively, first check that module can be integrated spheroid.
Conglomerate is positioned at below, wafer 10 edges, the laser light quantity that can detect and pass through wafer 10 edges, be incident to wafer 10 and penetrate to a corresponding side with incoming position, thus whether the edge of judging wafer 10 exists crackle or particle, and distinguish crackle and particle.
The structure and the integrated spheroid of conglomerate will be described below.
Fig. 7 illustrates wafer tester according to another embodiment of the present invention, and Fig. 8 shows the different layout of layout with the optical system of Fig. 7.
Referring to Fig. 7 and Fig. 8, first checks that module can be optical system 700, the latter comprises the convergent lens (condenser lens) 710 that is used for convergent laser and is positioned at the photodiode 720 on convergent lens 710 sides that photodiode 720 is positioned on the convergence path, detects the light quantity of the laser of assembling.
First checks that module can place wafer 10 tops as shown in Figure 7, or places wafer 10 belows as shown in Figure 8.
Second detector in Fig. 9 exploded view 5.The function mode of second detector of Figure 10 key diagram 9.Figure 11 is a photoelectric diode structure according to an embodiment of the invention.Another function mode of second detector of Figure 12 key diagram 9.
Referring to Fig. 9, second detector 620 comprises second laser generator 621, can check module by vertical mobile cylinder 622 and second, second laser generator 621 is positioned at the outside of wafer 10 to be transferred and along the longitudinally generation laser of wafer 10, can be connected to second laser generator 621 by vertical mobile cylinder 622, be used for the irradiation position of laser is moved vertically to the precalculated position, second checks that module is positioned at wafer 10 tops, is used to detect the laser that wafer 10 is launched.
Second checks that module can be photoelectric diode structure 623.
Referring to Fig. 9 and Figure 11, photoelectric diode structure 623 comprises support bar 623a and a plurality of photodiode 623b, support bar 623a has one section predetermined length in the direction along the moving direction that crosses wafer 10, and a plurality of photodiode 623b are positioned at support bar 623a below.
Each photodiode 623b is circular, and is arranged as zigzag (zigzag).Can be not at interval between the photodiode 623b.
Simultaneously, buanch unit 640 can be the clamp that is positioned at wafer 10 sidepieces, and conglomerate and photodiode 623 can be electrically connected to each other.Therefore, when the marginal existence crackle of wafer 10 or particle or photodiode 623 detect laser, buanch unit 640 will receive the actuating force from the outside, and along another transfer path c wafer 10 be taken out and to deliver to a certain position.
The second inspection module can be used the previously described conglomerate that detects by the laser of crackle in the wafer 10 or the scattering of particle institute.
To describe the conglomerate of checking the second inspection module of the module or second detector 620 as first of first detector 610 below in detail.
Figure 13 is the cross-sectional view of conglomerate according to an embodiment of the invention.Figure 14 is the cross-sectional view that is intercepted along Figure 13 center line I-I '.Figure 15 is the cross-sectional view of another inner space example of showing the conglomerate of Figure 13.Figure 16 is the block diagram of the monitor module of Figure 13.
Improved according to an embodiment of the invention conglomerate is as described below.
Referring to Figure 13, the conglomerate of embodiments of the invention comprises the main body 100 and first fluorescence detector 300.
Herein, the inner space of main body 100 can be as shown in figure 13 cylindrical.Perhaps as shown in figure 15, the inner space of main body 100 can comprise columniform first space S 1 and be positioned at hemisphere second space S 2 of first space S, 1 relative both sides, and first space S 1 is connected with second space S 2.
Diffused light outgoing portion 130 comprises a plurality of through holes of arranging along the longitudinal direction of main body 100 with nonlinear way, and each through hole is circular or oval.Perhaps each hole can be polygon.Diffused light outgoing portion 130 is connected with the inner space of main body 100.Be incident to light incident section 110 and can penetrate via diffused light outgoing portion 130 through the light of the inner space of main body 100 diffusion.
According to embodiments of the invention, first fluorescence detector 300 is arranged in diffused light outgoing portion 130, be used to detect be incident to light incident section 110, through diffusion of the inner space of main body 100 and the light quantity that penetrates via diffused light outgoing portion 130.
Referring to Figure 16, monitor module 400 comprises controller 410 that is electrically connected to first fluorescence detector 300 and the display 420 that is electrically connected to controller 410.
Herein, the quantity of reference light therefor scope comprises the second quantity of reference light therefor scope that is used to distinguish the first quantity of reference light therefor scope of crackle and is used for distinguishing particles.
Figure 17 is the perspective view of the conglomerate of another embodiment of the present invention.Figure 18 is the cross-sectional view of the conglomerate of Figure 17.Figure 19 is the block diagram of the monitor module of Figure 17.
Referring to Figure 17, the conglomerate of another embodiment of the present invention comprises main body 100, first fluorescence detector 300 and second fluorescence detector 200.
Herein, first fluorescence detector 300 is with mentioned above identical, and second fluorescence detector 200 is used to detect and is incident to light incident section 110 and autonomous agent 100 inside are penetrated to the light of light outgoing portion 120.
Furthermore, conglomerate shown in Figure 17 comprises: main body 100, main body 100 has light incident section 110, in the light outgoing portion 120 and the diffused light outgoing portion 130 between light incident section 110 and light outgoing portion 120 of the respective side of light incident section 110, diffused light outgoing portion 130 allows light to be incident to light incident section 110 and diffusion is gone out, and main body 100 forms predetermined inner space; Detachable body 150, detachable body 150 has parallel the 3rd space S 3 that is engaged to the inner space of main body 100 and has predetermined length, is positioned at the 4th space S 4 of the semi-spherical shape that is connected with the 3rd space S 3 of the 3rd space S 3 relative both sides, fill-in light incident section 111, fill-in light outgoing portion 121 and auxiliary diffused light outgoing portion 131, so that the 3rd and the 4th space S 3 and S4 can be connected with light incident section 110 and light outgoing portion 120; Second fluorescence detector 200 is used to detect and is incident to light incident section 110 and the outgoing light quantity to light outgoing portion 120; Be arranged in first fluorescence detector 300 of diffused light outgoing portion 130, be used to detect the light quantity that diffusion is gone out.
Herein, first fluorescence detector 300 and second fluorescence detector 200 comprise photodiode.Second fluorescence detector 200 is described identical with Figure 12 substantially.In first fluorescence detector 300, photodiode is assembled to the circle or the ellipse hole of diffused light outgoing portion 130.
Referring to Figure 19, first and second fluorescence detector 300 and 200 is electrically connected to monitor module 400.
Therefore, first and second fluorescence detector 300 and 200 is electrically connected to selector 430, and selector 430 is electrically connected to controller 410, and in addition, controller 410 is electrically connected to display 420.
Referring to Figure 18, detachable body 150 comprises parallel the 3rd space S 3 that is engaged to the inner space of main body 100 and has predetermined length, is positioned at the 4th space S 4, fill-in light incident section 111 and the fill-in light outgoing portion 121 of the semi-spherical shape that is connected with the 3rd space S 3 of the 3rd space S 3 relative both sides, so that the 3rd and the 4th space S 3 and S4 can be connected with light incident section 110 and light outgoing portion 120.
Herein, the lid 101 of lid shape is positioned at a side of main body 100, and is coupled to a side of main body 100 threadably.
In addition, can form guide projections (not shown) on the inwall of main body 100, and can form guide hole (not shown) on the excircle of detachable body 150, guide hole can slide on guide projections.
Figure 20 is a cross-sectional view of showing another conglomerate example of third embodiment of the invention.
Simultaneously, aforementioned conglomerate is cylindrical accordingly with main body 100, and shape seemingly has the cylinder of predetermined length.
Perhaps, check that as first of first detector 610 conglomerate of module can have integrated spheroid as shown in figure 20.
Integrated spheroid comprises the spherical 102, the light incident section 111 that is formed at spherical 102 1 sides that form predetermined inner space, be formed at the light outgoing portion 121 of spherical 102 opposite sides (relative with light incident section 110) and be formed at the diffused light outgoing portion 131 between the light incident section 111 and light outgoing portion 121 in the spherical 102.
As previously mentioned, in the diffused light outgoing portion 131 first fluorescence detector 300 can be installed, or in light incident section 111 and the diffused light outgoing portion 131 second fluorescence detector 200 and first fluorescence detector 300 can be installed respectively.
In addition, first fluorescence detector 300 and second fluorescence detector 200 can be electrically connected to controller 410, as Figure 14 and shown in Figure 17.In addition, controller 410 is electrically connected to master controller 650.
Simultaneously, treatment facility as mentioned below with wafer tester of aforementioned arrangements comes work.
Wafer transfer portion 500 (as cylinder) is transferred to Fig. 1, Fig. 2 and wafer shown in Figure 3 in the wafer tester A along transfer path a.
Referring to Fig. 4 and Fig. 6, check by 600 pairs of wafers 10 that shift along transfer path a of detector.Herein, detector 600 checks whether edge part, inside and the end face of wafer 10 exist crackle and particle, and distinguishes crackle and particle.In addition, the external status of wafer 10 can be verified with visual manner.
The process of using first detector 610 to check the edge part of wafer 10 at first will be described.
Referring to Fig. 5, buanch unit 640 is transferred to a certain position with wafer 10.
Then, first laser generator 611 from wafer 10 bottoms to wafer 10 top-emission laser.Among Fig. 6, first laser generator 611 from wafer top to wafer bottom emission laser.
The laser that passes through wafer 10 is incident to the light incident section 110 of conglomerate.
In other words, laser is incident to the inner space of main body 100 from light incident section 110 when forming travel path.
Then, light follows inbound path and arrives the light outgoing portion 120 relative with light incident section 110.
Therefore, first fluorescence detector 300 and second fluorescence detector 200 with a plurality of photodiodes (portion 120 is parallel with the light outgoing) can detect light quantity.Then, first and second fluorescence detector 300 and 200 is sent to controller 410 with detected light quantity.
When detecting light quantity, controller 410 judges in the wafer 10 whether have crackle or particle.
In addition, when especially being in the first quantity of reference light therefor scope in detected light quantity is in the quantity of reference light therefor scope, there is crackle in controller 410 judgements.On the other hand, in the time of in detected light quantity is in the second quantity of reference light therefor scope, there is particle in controller 410 judgements.Then, controller 410 is sent to master controller 650 with result of determination.
In addition, have the signal of telecommunication to be sent to display 420, so that can show the quantity of reference light therefor scope with visual manner, and whether detected light quantity is in the preset reference light quantity scope.
Correspondingly, can find out easily,, be incident to light incident section 110 and whether the light quantity that penetrates from light outgoing portion 120 is in the quantity of reference light therefor scope according to the testing result of second fluorescence detector 200 by display 420.
Simultaneously, if the light that is incident to light incident section 110 in the inner space of main body 100 by diffusion, then diffused light penetrates via the diffused light outgoing portion 130 that is arranged in main body 100.
At this moment, the diffused light of main body 100 inside reflects from hemisphere second space S 2 inwalls, thereby leads diffused light outgoing portion 130 easily.
In addition, photographing module 612 is taken the end face of wafer 10.
For example, the bottom of light source 612a irradiation wafer 10.Then, the camera 612b that is positioned at wafer 10 tops takes the exposure end face of wafer 10, and the relevant information of institute's projection picture is sent to master controller 650.
Correspondingly, master controller 650 can store the relevant information of institute's projection picture, verifies the state of wafer 10 end faces to be used for visual manner.
The work of another conglomerate that adopts in first detector 610 will be described simultaneously, below.
In addition, first fluorescence detector 300 that is arranged in diffused light outgoing portion 130 detects the light quantity of the inner space diffusion of main bodys 100 or detachable body 150.
At this moment, selector 430 is electrically connected to controller 410 by in second fluorescence detector 200 and first fluorescence detector 300 at least one.
If second fluorescence detector 200 and first fluorescence detector 300 all are connected to controller 410, then second fluorescence detector 200 and first fluorescence detector 300 can send light quantity and diffusion light quantity respectively to controller 410.
Then, controller 410 judges whether detected light quantity is in the quantity of reference light therefor scope, and judges whether detected diffusion light quantity is in reference in the diffused light weight range.
If the diffusion light quantity that is detected is in reference in the diffused light weight range, in the time of especially in detected diffusion light quantity is in the first quantity of reference light therefor scope, there is crackle in controller 410 judgements.On the other hand, in the time of in detected diffusion light quantity is in the second quantity of reference light therefor scope, there is particle in controller 410 judgements.
In addition, controller 410 shows detected light quantity, preset reference light quantity scope, detected diffusion light quantity and preset reference diffused light weight range with visual manner.Controller 410 also shows whether detected light quantity is in the preset reference light quantity scope and whether detected diffusion light quantity is in the preset reference diffused light weight range.
Correspondingly, when second fluorescence detector, 200 detected light quantities surpass the quantity of reference light therefor scope, or when the diffusion light quantity above with reference to the diffused light weight range time, can think the marginal existence crackle or the particle of wafer 10.Herein, therefore the method for differentiation crackle and particle repeats no more as previously mentioned.
Can see easily by display 420, testing result according to second fluorescence detector 200, whether the light quantity that is incident to light incident section 110 and penetrates from light outgoing portion 120 is in the quantity of reference light therefor scope, and whether the diffusion light quantity is in reference in the diffused light weight range.
As previously mentioned, if having crackle or particle in the wafer 10, controller 410 will send the signal of telecommunication to master controller 650, and control buanch unit 640 and pick up wafer 10 and it is taken out along transfer path c (as shown in Figure 1 to Figure 3).
On the other hand, if detected light quantity is in the quantity of reference light therefor scope, or detected diffusion light quantity is in reference in the diffused light weight range, then controller will be judged in the edge of wafer 10 and not have crackle or particle, thereby wafer 10 will be admitted to the conveyer 20 of treatment chamber PC, Fig. 2 of Fig. 1 and load lock chamber LLC1, the LLC2 of Fig. 3 along transfer path a.Correspondingly, wafer 10 is admitted to transfer chamber TC and a plurality of treatment chamber PC1...PC4, carries out one group of processing procedure then.
Then, the work of second detector 620 of various details embodiment.
Referring to Fig. 5 and Fig. 6, master controller 650 sends signal to driver 660, and driver 660 regulate can vertical mobile cylinder 622 vertical position, thereby change the desired location of second laser generator 621.
When this setting position, the line beam laser of second laser generator, 621 emissions is advanced along the end face of wafer 10, or passes through wafer 10 along its length.
Plant situation before Figure 10 illustrates, particle scattering or reflection that the laser of advancing along the end face of wafer 10 is existed on the end face then are used as second and check that the photoelectric diode structure 623 that is positioned at wafer 10 tops of module detects.Therefore, photoelectric diode structure 623 detects predetermined light quantity.
In in the case, the photodiode 623b of photoelectric diode structure 623 sends the signal of telecommunication to master controller 650, and master controller 650 drives buanch units 640 and makes it to take out wafer 10 along another transfer path c.
Figure 12 illustrates the back and plants situation, along the length direction of wafer 10 through the laser of wafer 10 by foreign substance diffusion or reflection in the wafer 10, the photodiode 623b that then is positioned at wafer 10 tops detects.
In in the case, photodiode 623b sends the signal of telecommunication to master controller 650, and master controller 650 drives buanch units 640 and makes it to take out wafer 10 along another transfer path c.
When cylindrical conglomerate is used as the second inspection module, if first fluorescence detector 300 of diffused light outgoing portion 130 and second fluorescence detector 200 of light outgoing portion 120 detect the light that wafer 10 is scattered, then controller 410 judges in the wafer 10 whether have crackle or particle, takes out wafer 10 by this as previously mentioned.
Herein, the differentiation crackle is described identical with the method and the preamble of particle.
The present invention can effectively check the quality (whether having crackle or particle) of the wafer of waiting to send into one group of processing procedure, thus judge whether wafer should be sent into treatment chamber or follow-up this group processing procedure or with wafer from wherein taking out.
When the present invention also can and have laser to be incident upon the substrate edges part near the improvement conglomerate is placed in substrate edges, check that effectively and easily substrate edges is to detect the light quantity of being passed through the laser of substrate by conglomerate.
In addition, the present invention also can be effectively along the length direction or the end face emitting linear bundle of substrate, thereby check the quality of wafer inside or end face.
Though the present invention with preferred embodiment openly as above; so it is not to be used to limit the present invention; has common practise person in the technical field under any; without departing from the spirit and scope of the present invention; when can modifying and retouch, so protection scope of the present invention is when looking being as the criterion that claim defines.
Claims (26)
1. wafer tester comprises:
Wafer transfer portion, it shifts wafer along transfer path;
Detector is positioned near the edge of wafer to be transferred, and it checks in the described edge of described wafer whether have crackle or particle, and distinguishes crackle and particle.
2. wafer tester according to claim 1, wherein said detector comprise first detector and second detector,
Described first detector comprises: first laser generator, be positioned at below the edge of described wafer, and be used to launch laser; First checks module, is positioned at the top, edge of described wafer, is used for determining whether the described edge of described wafer exists crackle or particle, and by detecting edge through described wafer, distinguishing crackle and particle by the amount of the opposite side emitting laser of incident; Photographing module is used to take the outer surface of described wafer,
Described second detector comprises: second laser generator, be positioned at wafer sidepiece to be transferred, and be used for length direction emission laser along described wafer; Can vertical mobile cylinder, be connected to second laser generator, be used for the irradiation position of laser is vertically moved to a certain position; Second checks module, is positioned at described wafer top, is used to detect the laser that described wafer scatters.
3. wafer tester according to claim 2, wherein said detector comprises buanch unit,
Described buanch unit is electrically connected to first and checks the module and the second inspection module, and when existing crackle or second to check that module detects laser in the described wafer, described buanch unit takes out described wafer along another transfer path.
4. wafer tester according to claim 2, wherein said first checks that module is a conglomerate, described conglomerate comprises: main body, described main body comprises light incident section, the light outgoing portion relative with described smooth incident section and the diffused light outgoing portion between described smooth incident section and described smooth outgoing portion, the light that described diffused light outgoing portion allows to be incident to described smooth incident section is by diffusion and outgoing, and described main body forms predetermined inner space; First fluorescence detector is arranged in the described diffused light outgoing portion and detects the amount of diffused light; Second fluorescence detector is arranged in the described smooth outgoing portion and detects and is incident to described smooth incident section and via the light quantity of described smooth outgoing portion outgoing; Monitor module is electrically connected to described first fluorescence detector and second fluorescence detector, and be used for judging whether have crackle or particle, and distinguish crackle and particle based on detected light quantity,
Described photographing module comprises: light source is positioned at described wafer one side and shines described wafer; Camera is positioned at described wafer opposite side and takes the outer surface of described wafer.
5. wafer tester according to claim 2, wherein first check that module is the optical system that comprises lens and photodiode, described lens are positioned near the described wafer and convergent laser, and described photodiode is positioned near the described lens and the amount of detection laser.
6. wafer tester according to claim 4, wherein said main body are cylindrical.
7. wafer tester according to claim 2, wherein said second checks that module is positioned at described wafer top, and comprises a plurality of photodiodes.
8. wafer tester according to claim 2, wherein said second checks that module is a conglomerate, described conglomerate comprises:
Main body, described main body comprises light incident section, the light outgoing portion relative with described smooth incident section and the diffused light outgoing portion between described smooth incident section and described smooth outgoing portion, described diffused light outgoing portion allow to be incident to described smooth incident section by diffusion and outgoing, described main body forms predetermined inner space;
First fluorescence detector is arranged in the diffused light outgoing portion and detects the amount of diffused light;
Second fluorescence detector is arranged in the described smooth outgoing portion, is used to detect be incident to described smooth incident section and via the amount of the light of described smooth outgoing portion outgoing;
Monitor module is electrically connected to described first fluorescence detector and second fluorescence detector, is used to determine whether to exist crackle and particle, and distinguishes crackle and particle based on detected light quantity.
9. wafer tester according to claim 4, wherein said inner space comprises first space and second space, and first space has predetermined length and forms abreast, and second space is positioned at relative both sides, first space, second space has semi-spherical shape and is connected with first space
First space and second space and described smooth incident section and described smooth outgoing portion are connected.
10. wafer tester according to claim 4, wherein said smooth incident section respectively comprises the hole that length is identical with described smooth outgoing portion, described hole is to form with the described length direction of linear mode along described main body,
Described diffused light outgoing portion comprises a plurality of through holes that form along the described length direction of described main body with nonlinear way.
11. wafer tester according to claim 4, wherein said main body comprises detachable body, in order to being engaged to described inner space,
Described detachable body comprises: the 3rd space has predetermined length and parallel formation; The 4th space is positioned at relative both sides, described the 3rd space and has semi-spherical shape, and described the 4th space is connected with described the 3rd space; Fill-in light incident section and fill-in light outgoing portion, the 3rd space and the 4th space are via described fill-in light incident section and described fill-in light outgoing portion and be connected with described smooth incident section and described smooth outgoing portion.
12. wafer tester according to claim 4, wherein said first fluorescence detector and described second fluorescence detector comprise photodiode.
13. according to claim 4 or 8 described wafer testers, wherein said monitor module comprises:
Be installed on the controller in the described main body, it is electrically connected to described first fluorescence detector and second fluorescence detector, be used for determining whether detected light quantity is in the quantity of reference light therefor scope, whether the amount of determining detected diffused light is in reference in the diffused light weight range, determine whether to exist crackle or particle, and distinguish crackle and particle;
Be installed on the display in the described main body, it is electrically connected to described controller, be used for showing following content: for whether whether detected light quantity default described quantity of reference light therefor scope, detected light quantity are in the described quantity of reference light therefor scope, are in described with reference in the diffused light weight range for the default described amount with reference to diffused light weight range and detected diffused light of the amount of detected diffused light with visual manner
Wherein said quantity of reference light therefor scope comprises the second quantity of reference light therefor scope that is used to distinguish the first quantity of reference light therefor scope of crackle and is used for distinguishing particles,
Wherein, described with reference to the diffused light weight range comprise be used to distinguish crackle first with reference to the diffused light weight range and be used for distinguishing particles second with reference to the diffused light weight range.
14. the treatment facility with wafer tester comprises:
Chamber, its inside is formed with the transfer path of wafer;
Wafer transfer portion, the position is used for described wafer is transferred to described chamber along described transfer path near described chamber;
Wafer tester comprises: be positioned near the detector in edge of described wafer to be transferred, described detector checks whether the described edge of described wafer exists crackle or particle, distinguishes crackle and particle, and takes out described wafer along another transfer path.
15. the treatment facility with wafer tester according to claim 14, wherein said detector comprise first detector and second detector,
Described first detector comprises: first laser generator, be positioned at below the described edge of described wafer, and be used to launch laser; First checks module, be positioned at the top, described edge of described wafer, be used for determining whether the described edge of described wafer exists crackle or particle, and by detecting described edge through described wafer, distinguishing crackle and particle by the amount of the opposite side emitting laser of incident; Photographing module is used to take the outer surface of described wafer,
Described second detector comprises: second laser generator, be positioned at described wafer sidepiece to be transferred, and be used for length direction emission laser along described wafer; Can vertical mobile cylinder, be connected to described second laser generator, be used for the irradiation position of laser is vertically moved to a certain position; Second checks module, is positioned at described wafer top, is used to detect the laser that described wafer scatters.
16. the treatment facility with wafer tester according to claim 15, wherein said detector comprises buanch unit,
Described buanch unit is electrically connected to described first and checks the module and the second inspection module, and when existing crackle or described second to check that module detects laser in the described wafer, described buanch unit takes out described wafer along another transfer path.
17. the treatment facility with wafer tester according to claim 15, wherein said first checks that module is a conglomerate, described conglomerate comprises: main body, described main body comprises light incident section, the light outgoing portion relative with described smooth incident section and the diffused light outgoing portion between described smooth incident section and described smooth outgoing portion, the light that described diffused light outgoing portion allows to be incident to described smooth incident section is by diffusion and outgoing, and described main body forms predetermined inner space; First fluorescence detector is arranged in the described diffused light outgoing portion, is used to detect the amount of described diffused light; Second fluorescence detector is arranged in the described smooth outgoing portion, is used to detect be incident to described smooth incident section and via the amount of the light of described smooth outgoing portion outgoing; Monitor module is electrically connected to first fluorescence detector and second fluorescence detector, is used to determine whether to exist crackle and particle, and distinguishes crackle and particle based on detected light quantity,
Described photographing module comprises: light source is positioned at described wafer one side and shines described wafer; Camera is positioned at described wafer opposite side and takes the outer surface of described wafer.
18. the treatment facility with wafer tester according to claim 15, wherein said first checks that module is the optical system that comprises lens and photodiode, described lens are positioned near the described wafer, be used for convergent laser, described photodiode is positioned near the described lens, is used for the amount of detection laser.
19. the treatment facility with wafer tester according to claim 17, wherein said main body are cylindrical.
20. the treatment facility with wafer tester according to claim 15, wherein said second checks that module is a photoelectric diode structure, described photoelectric diode structure comprises: support bar, described support bar is positioned at described wafer top, and along having predetermined length on the direction of the moving direction that crosses described wafer; A plurality of photodiodes are positioned at described support bar below and face the end face of described wafer, and
Each described photodiode is circular, and is arranged as in a zigzag.
21. the treatment facility with wafer tester according to claim 15, wherein said second checks that module is a conglomerate, and described conglomerate comprises:
Main body, described main body comprises light incident section, the light outgoing portion relative with described smooth incident section and the diffused light outgoing portion between described smooth incident section and described smooth outgoing portion, the light that described diffused light outgoing portion allows to be incident to described smooth incident section is by diffusion and outgoing, and described main body forms predetermined inner space;
First fluorescence detector is arranged in the described diffused light outgoing portion, is used to detect the amount of described diffused light;
Second fluorescence detector is arranged in the described smooth outgoing portion, is used to detect be incident to described smooth incident section and via the amount of the light of described smooth outgoing portion outgoing;
Monitor module is electrically connected to first fluorescence detector and second fluorescence detector, is used to determine whether to exist crackle and particle, and distinguishes crackle and particle based on detected light quantity.
22. the treatment facility with wafer tester according to claim 17, wherein said inner space comprises first space with predetermined length and parallel formation and second space that is positioned at relative both sides, described first space and has semi-spherical shape, described second space is connected with described first space
Described first space and second space and described smooth incident section and described smooth outgoing portion are connected.
23. the treatment facility with wafer tester according to claim 17, wherein said smooth incident section respectively comprises the hole that length is identical with described smooth outgoing portion, and described hole is to form with the described length direction of linear mode along described main body,
Described diffused light outgoing portion comprises a plurality of through holes that form along the described length direction of described main body with nonlinear way.
24. the treatment facility with wafer tester according to claim 17, wherein said main body comprises detachable body, in order to being engaged to described inner space,
Described detachable body comprises: the 3rd space has predetermined length and parallel formation; The 4th space is positioned at relative both sides, described the 3rd space and has semi-spherical shape, and described the 4th space is connected with described the 3rd space; Fill-in light incident section and fill-in light outgoing portion, the 3rd space and the 4th space are via described fill-in light incident section and described fill-in light outgoing portion and be connected with described smooth incident section and described smooth outgoing portion.
25. the treatment facility with wafer tester according to claim 17, wherein said first fluorescence detector and described second fluorescence detector comprise photodiode.
26. according to claim 17 or 21 described treatment facilities with wafer tester, wherein said monitor module comprises:
Controller, be installed in the described main body, controller is electrically connected to described first fluorescence detector and second fluorescence detector, be used for determining whether the amount of detected light is in the quantity of reference light therefor scope, determine whether detected diffusion light quantity is in reference in the diffused light weight range, judge whether have crackle or particle, and distinguish crackle and particle; And
Display, be installed in the described main body, display is electrically connected to described controller, be used for showing following content: for whether whether detected light quantity default described quantity of reference light therefor scope, detected light quantity are in the described quantity of reference light therefor scope, are in described with reference in the diffused light weight range with reference to diffused light weight range and detected diffusion light quantity for default described of detected diffusion light quantity with visual manner
Wherein, described quantity of reference light therefor scope comprises the second quantity of reference light therefor scope that is used to distinguish the first quantity of reference light therefor scope of crackle and is used for distinguishing particles,
Wherein, described with reference to the diffused light weight range comprise be used to distinguish crackle first with reference to the diffused light weight range and be used for distinguishing particles second with reference to the diffused light weight range.
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| KR20080032868 | 2008-04-08 | ||
| KR10-2008-0032868 | 2008-04-08 | ||
| PCT/KR2008/002795 WO2009125896A1 (en) | 2008-04-08 | 2008-05-19 | Wafer testing apparatus and processing equipment having the same |
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| CN101990706A true CN101990706A (en) | 2011-03-23 |
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| CN2008801285260A Pending CN101990706A (en) | 2008-04-08 | 2008-05-19 | Wafer testing apparatus and processing equipment having the same |
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| KR (1) | KR101060712B1 (en) |
| CN (1) | CN101990706A (en) |
| TW (1) | TWI388021B (en) |
| WO (1) | WO2009125896A1 (en) |
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| CN103972126A (en) * | 2014-05-21 | 2014-08-06 | 上海华力微电子有限公司 | Method for preventing silicon wafers from being broken |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102009050711A1 (en) | 2009-10-26 | 2011-05-05 | Schott Ag | Method and device for detecting cracks in semiconductor substrates |
| KR102044788B1 (en) * | 2012-10-30 | 2019-11-18 | 삼성디스플레이 주식회사 | Inspection Apparatus for Glass substrate |
| KR101514031B1 (en) * | 2014-04-28 | 2015-04-22 | 이성수 | Shield Box |
| WO2015168282A1 (en) | 2014-04-29 | 2015-11-05 | Pleotint, L.L.C. | Absorbing solar control interlayers |
| WO2016162406A1 (en) * | 2015-04-07 | 2016-10-13 | Albert-Ludwigs-Universität Freiburg | Device for detecting electronic defects in the edge region of silicon-based semiconductors |
| KR101990639B1 (en) * | 2017-11-08 | 2019-06-18 | 주식회사 테스 | Substrate inspection method and Substrate processing apparatus |
| WO2020174990A1 (en) * | 2019-02-28 | 2020-09-03 | 吉野石膏株式会社 | Inspection device for plate-like body |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20020046829A (en) * | 2000-12-15 | 2002-06-21 | 윤종용 | Apparatus for inspecting wafer |
| KR100445457B1 (en) * | 2002-02-25 | 2004-08-21 | 삼성전자주식회사 | Apparatus and method for inspecting wafer backside |
| KR100596048B1 (en) * | 2002-07-08 | 2006-07-03 | 삼성코닝정밀유리 주식회사 | System for inspecting edge of glass substrate |
| JP4298238B2 (en) * | 2002-08-27 | 2009-07-15 | 大日本スクリーン製造株式会社 | Substrate processing apparatus and substrate processing system |
| US7366344B2 (en) | 2003-07-14 | 2008-04-29 | Rudolph Technologies, Inc. | Edge normal process |
| US7968859B2 (en) | 2003-07-28 | 2011-06-28 | Lsi Corporation | Wafer edge defect inspection using captured image analysis |
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2008
- 2008-05-19 WO PCT/KR2008/002795 patent/WO2009125896A1/en active Application Filing
- 2008-05-19 CN CN2008801285260A patent/CN101990706A/en active Pending
- 2008-05-26 TW TW097119396A patent/TWI388021B/en not_active IP Right Cessation
- 2008-11-21 KR KR1020080116286A patent/KR101060712B1/en active IP Right Grant
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103972126A (en) * | 2014-05-21 | 2014-08-06 | 上海华力微电子有限公司 | Method for preventing silicon wafers from being broken |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20090107400A (en) | 2009-10-13 |
| KR101060712B1 (en) | 2011-08-30 |
| TW200943447A (en) | 2009-10-16 |
| TWI388021B (en) | 2013-03-01 |
| WO2009125896A1 (en) | 2009-10-15 |
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Application publication date: 20110323 |