TWI367572B - Ac light emitting diode having improved transparent electrode structure - Google Patents

Ac light emitting diode having improved transparent electrode structure

Info

Publication number
TWI367572B
TWI367572B TW095146587A TW95146587A TWI367572B TW I367572 B TWI367572 B TW I367572B TW 095146587 A TW095146587 A TW 095146587A TW 95146587 A TW95146587 A TW 95146587A TW I367572 B TWI367572 B TW I367572B
Authority
TW
Taiwan
Prior art keywords
light emitting
emitting diode
transparent electrode
electrode structure
improved transparent
Prior art date
Application number
TW095146587A
Other languages
English (en)
Other versions
TW200725952A (en
Inventor
Jae Ho Lee
Yeo Jin Yoon
Original Assignee
Seoul Opto Device Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Opto Device Co Ltd filed Critical Seoul Opto Device Co Ltd
Publication of TW200725952A publication Critical patent/TW200725952A/zh
Application granted granted Critical
Publication of TWI367572B publication Critical patent/TWI367572B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Led Devices (AREA)
TW095146587A 2005-12-16 2006-12-13 Ac light emitting diode having improved transparent electrode structure TWI367572B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050124256A KR100652864B1 (ko) 2005-12-16 2005-12-16 개선된 투명전극 구조체를 갖는 교류용 발광 다이오드

Publications (2)

Publication Number Publication Date
TW200725952A TW200725952A (en) 2007-07-01
TWI367572B true TWI367572B (en) 2012-07-01

Family

ID=37731748

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095146587A TWI367572B (en) 2005-12-16 2006-12-13 Ac light emitting diode having improved transparent electrode structure

Country Status (7)

Country Link
US (1) US7994523B2 (zh)
JP (1) JP5073675B2 (zh)
KR (1) KR100652864B1 (zh)
CN (1) CN100552995C (zh)
DE (2) DE112006002883B4 (zh)
TW (1) TWI367572B (zh)
WO (1) WO2007083884A1 (zh)

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US8461613B2 (en) 2008-05-27 2013-06-11 Interlight Optotech Corporation Light emitting device
JP2010205910A (ja) * 2009-03-03 2010-09-16 Toshiba Corp 半導体発光素子
KR101138975B1 (ko) * 2009-09-15 2012-04-25 서울옵토디바이스주식회사 전파 발광셀 및 반파 발광셀을 갖는 교류용 발광 다이오드
TWI533474B (zh) * 2009-10-20 2016-05-11 晶元光電股份有限公司 光電元件
US20110203656A1 (en) * 2010-02-24 2011-08-25 Iowa State University Research Foundation, Inc. Nanoscale High-Aspect-Ratio Metallic Structure and Method of Manufacturing Same
JP5195798B2 (ja) * 2010-03-23 2013-05-15 豊田合成株式会社 半導体発光素子の製造方法
CN102859726B (zh) * 2010-04-06 2015-09-16 首尔伟傲世有限公司 发光二极管及其制造方法
CN102446948B (zh) * 2010-10-12 2014-07-30 晶元光电股份有限公司 发光元件
KR101040140B1 (ko) 2010-11-03 2011-06-09 (주)더리즈 반도체 발광 소자 어레이 및 그 제조방법
CN102097562A (zh) * 2010-12-14 2011-06-15 金木子 交流表面贴片式垂直结构半导体发光二极管
JP5772213B2 (ja) * 2011-05-20 2015-09-02 サンケン電気株式会社 発光素子
CN102903818A (zh) * 2011-07-27 2013-01-30 南通同方半导体有限公司 一种大功率GaN基发光二极管结构及其制作方法
KR101803014B1 (ko) 2011-08-24 2017-12-01 서울바이오시스 주식회사 발광다이오드
KR101926360B1 (ko) * 2012-03-06 2018-12-07 삼성전자주식회사 멀티셀 어레이를 갖는 반도체 발광장치
TWI549278B (zh) * 2012-03-12 2016-09-11 晶元光電股份有限公司 發光二極體元件
CN103367384B (zh) * 2012-03-30 2018-04-03 晶元光电股份有限公司 发光二极管元件
CN103594600B (zh) * 2012-08-15 2018-05-15 晶元光电股份有限公司 发光装置
US9171826B2 (en) * 2012-09-04 2015-10-27 Micron Technology, Inc. High voltage solid-state transducers and solid-state transducer arrays having electrical cross-connections and associated systems and methods
CN107223285B (zh) * 2015-02-13 2020-01-03 首尔伟傲世有限公司 发光元件以及发光二极管
KR102357188B1 (ko) 2015-07-21 2022-01-28 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
KR20200011187A (ko) * 2018-07-24 2020-02-03 서울바이오시스 주식회사 아연 산화물층을 구비하는 발광 다이오드 및 그것을 제조하는 방법
TWI700683B (zh) * 2018-12-06 2020-08-01 友達光電股份有限公司 畫素結構
JP7014973B2 (ja) * 2019-08-28 2022-02-02 日亜化学工業株式会社 発光装置
CN114256390B (zh) * 2021-12-13 2024-07-02 广东省科学院半导体研究所 一种led阵列芯片及其制作方法

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JP2004014899A (ja) 2002-06-10 2004-01-15 Para Light Electronics Co Ltd 発光ダイオードチップの直列構造
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DE60336252D1 (de) * 2002-08-29 2011-04-14 Seoul Semiconductor Co Ltd Lichtemittierendes bauelement mit lichtemittierenden dioden
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DE102004021175B4 (de) * 2004-04-30 2023-06-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchips für die Optoelektronik und Verfahren zu deren Herstellung
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Also Published As

Publication number Publication date
US7994523B2 (en) 2011-08-09
JP5073675B2 (ja) 2012-11-14
CN100552995C (zh) 2009-10-21
DE112006002883T5 (de) 2008-09-18
DE112006002883B4 (de) 2010-09-09
TW200725952A (en) 2007-07-01
DE112006004103B4 (de) 2021-06-02
WO2007083884A1 (en) 2007-07-26
US20080217629A1 (en) 2008-09-11
JP2009519604A (ja) 2009-05-14
CN101305475A (zh) 2008-11-12
KR100652864B1 (ko) 2006-12-04

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees