TWI367572B - Ac light emitting diode having improved transparent electrode structure - Google Patents
Ac light emitting diode having improved transparent electrode structureInfo
- Publication number
- TWI367572B TWI367572B TW095146587A TW95146587A TWI367572B TW I367572 B TWI367572 B TW I367572B TW 095146587 A TW095146587 A TW 095146587A TW 95146587 A TW95146587 A TW 95146587A TW I367572 B TWI367572 B TW I367572B
- Authority
- TW
- Taiwan
- Prior art keywords
- light emitting
- emitting diode
- transparent electrode
- electrode structure
- improved transparent
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050124256A KR100652864B1 (ko) | 2005-12-16 | 2005-12-16 | 개선된 투명전극 구조체를 갖는 교류용 발광 다이오드 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200725952A TW200725952A (en) | 2007-07-01 |
TWI367572B true TWI367572B (en) | 2012-07-01 |
Family
ID=37731748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW095146587A TWI367572B (en) | 2005-12-16 | 2006-12-13 | Ac light emitting diode having improved transparent electrode structure |
Country Status (7)
Country | Link |
---|---|
US (1) | US7994523B2 (zh) |
JP (1) | JP5073675B2 (zh) |
KR (1) | KR100652864B1 (zh) |
CN (1) | CN100552995C (zh) |
DE (2) | DE112006002883B4 (zh) |
TW (1) | TWI367572B (zh) |
WO (1) | WO2007083884A1 (zh) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101396586B1 (ko) * | 2007-09-14 | 2014-05-21 | 서울반도체 주식회사 | 하이브리드 발광 소자 |
US8461613B2 (en) | 2008-05-27 | 2013-06-11 | Interlight Optotech Corporation | Light emitting device |
JP2010205910A (ja) * | 2009-03-03 | 2010-09-16 | Toshiba Corp | 半導体発光素子 |
KR101138975B1 (ko) * | 2009-09-15 | 2012-04-25 | 서울옵토디바이스주식회사 | 전파 발광셀 및 반파 발광셀을 갖는 교류용 발광 다이오드 |
TWI533474B (zh) * | 2009-10-20 | 2016-05-11 | 晶元光電股份有限公司 | 光電元件 |
US20110203656A1 (en) * | 2010-02-24 | 2011-08-25 | Iowa State University Research Foundation, Inc. | Nanoscale High-Aspect-Ratio Metallic Structure and Method of Manufacturing Same |
JP5195798B2 (ja) * | 2010-03-23 | 2013-05-15 | 豊田合成株式会社 | 半導体発光素子の製造方法 |
CN102859726B (zh) * | 2010-04-06 | 2015-09-16 | 首尔伟傲世有限公司 | 发光二极管及其制造方法 |
CN102446948B (zh) * | 2010-10-12 | 2014-07-30 | 晶元光电股份有限公司 | 发光元件 |
KR101040140B1 (ko) | 2010-11-03 | 2011-06-09 | (주)더리즈 | 반도체 발광 소자 어레이 및 그 제조방법 |
CN102097562A (zh) * | 2010-12-14 | 2011-06-15 | 金木子 | 交流表面贴片式垂直结构半导体发光二极管 |
JP5772213B2 (ja) * | 2011-05-20 | 2015-09-02 | サンケン電気株式会社 | 発光素子 |
CN102903818A (zh) * | 2011-07-27 | 2013-01-30 | 南通同方半导体有限公司 | 一种大功率GaN基发光二极管结构及其制作方法 |
KR101803014B1 (ko) | 2011-08-24 | 2017-12-01 | 서울바이오시스 주식회사 | 발광다이오드 |
KR101926360B1 (ko) * | 2012-03-06 | 2018-12-07 | 삼성전자주식회사 | 멀티셀 어레이를 갖는 반도체 발광장치 |
TWI549278B (zh) * | 2012-03-12 | 2016-09-11 | 晶元光電股份有限公司 | 發光二極體元件 |
CN103367384B (zh) * | 2012-03-30 | 2018-04-03 | 晶元光电股份有限公司 | 发光二极管元件 |
CN103594600B (zh) * | 2012-08-15 | 2018-05-15 | 晶元光电股份有限公司 | 发光装置 |
US9171826B2 (en) * | 2012-09-04 | 2015-10-27 | Micron Technology, Inc. | High voltage solid-state transducers and solid-state transducer arrays having electrical cross-connections and associated systems and methods |
CN107223285B (zh) * | 2015-02-13 | 2020-01-03 | 首尔伟傲世有限公司 | 发光元件以及发光二极管 |
KR102357188B1 (ko) | 2015-07-21 | 2022-01-28 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광 소자 |
KR20200011187A (ko) * | 2018-07-24 | 2020-02-03 | 서울바이오시스 주식회사 | 아연 산화물층을 구비하는 발광 다이오드 및 그것을 제조하는 방법 |
TWI700683B (zh) * | 2018-12-06 | 2020-08-01 | 友達光電股份有限公司 | 畫素結構 |
JP7014973B2 (ja) * | 2019-08-28 | 2022-02-02 | 日亜化学工業株式会社 | 発光装置 |
CN114256390B (zh) * | 2021-12-13 | 2024-07-02 | 广东省科学院半导体研究所 | 一种led阵列芯片及其制作方法 |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
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US5223723A (en) * | 1990-10-19 | 1993-06-29 | At&T Bell Laboratories | Light emitting device |
DE19517697A1 (de) * | 1995-05-13 | 1996-11-14 | Telefunken Microelectron | Strahlungsemittierende Diode |
JP2868081B2 (ja) * | 1996-09-17 | 1999-03-10 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JPH118442A (ja) * | 1996-10-07 | 1999-01-12 | Canon Inc | 光半導体デバイス、それを用いた光通信システム及び方法 |
JP3934730B2 (ja) * | 1997-03-28 | 2007-06-20 | ローム株式会社 | 半導体発光素子 |
JP2000068555A (ja) * | 1998-08-19 | 2000-03-03 | Hitachi Ltd | 照明システム |
US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
JP2000277806A (ja) * | 1999-03-26 | 2000-10-06 | Oki Electric Ind Co Ltd | 発光ダイオードアレイ |
TW583774B (en) | 1999-12-01 | 2004-04-11 | Cree Inc | Scalable LED with improved current spreading structures |
US6885035B2 (en) | 1999-12-22 | 2005-04-26 | Lumileds Lighting U.S., Llc | Multi-chip semiconductor LED assembly |
JP4075321B2 (ja) * | 2001-04-24 | 2008-04-16 | 日亜化学工業株式会社 | 集積型窒化物半導体発光素子 |
KR100387099B1 (ko) * | 2001-05-02 | 2003-06-12 | 광주과학기술원 | 질화갈륨계 발광다이오드 및 그 제조방법 |
JP2004014899A (ja) | 2002-06-10 | 2004-01-15 | Para Light Electronics Co Ltd | 発光ダイオードチップの直列構造 |
JP4309106B2 (ja) | 2002-08-21 | 2009-08-05 | 士郎 酒井 | InGaN系化合物半導体発光装置の製造方法 |
DE60336252D1 (de) * | 2002-08-29 | 2011-04-14 | Seoul Semiconductor Co Ltd | Lichtemittierendes bauelement mit lichtemittierenden dioden |
JP2004048067A (ja) | 2003-10-14 | 2004-02-12 | Sanyo Electric Co Ltd | 発光部品およびその製造方法 |
TWI224876B (en) | 2003-12-23 | 2004-12-01 | Uni Light Technology Inc | Method for forming an LED device with a metallic substrate |
US7615798B2 (en) * | 2004-03-29 | 2009-11-10 | Nichia Corporation | Semiconductor light emitting device having an electrode made of a conductive oxide |
DE102004021175B4 (de) * | 2004-04-30 | 2023-06-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchips für die Optoelektronik und Verfahren zu deren Herstellung |
TW200501464A (en) | 2004-08-31 | 2005-01-01 | Ind Tech Res Inst | LED chip structure with AC loop |
-
2005
- 2005-12-16 KR KR1020050124256A patent/KR100652864B1/ko active IP Right Grant
-
2006
- 2006-11-28 US US12/088,999 patent/US7994523B2/en not_active Expired - Fee Related
- 2006-11-28 CN CNB2006800415821A patent/CN100552995C/zh active Active
- 2006-11-28 DE DE112006002883T patent/DE112006002883B4/de active Active
- 2006-11-28 DE DE112006004103.7T patent/DE112006004103B4/de active Active
- 2006-11-28 JP JP2008545477A patent/JP5073675B2/ja not_active Expired - Fee Related
- 2006-11-28 WO PCT/KR2006/005050 patent/WO2007083884A1/en active Application Filing
- 2006-12-13 TW TW095146587A patent/TWI367572B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US7994523B2 (en) | 2011-08-09 |
JP5073675B2 (ja) | 2012-11-14 |
CN100552995C (zh) | 2009-10-21 |
DE112006002883T5 (de) | 2008-09-18 |
DE112006002883B4 (de) | 2010-09-09 |
TW200725952A (en) | 2007-07-01 |
DE112006004103B4 (de) | 2021-06-02 |
WO2007083884A1 (en) | 2007-07-26 |
US20080217629A1 (en) | 2008-09-11 |
JP2009519604A (ja) | 2009-05-14 |
CN101305475A (zh) | 2008-11-12 |
KR100652864B1 (ko) | 2006-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |