TW583774B - Scalable LED with improved current spreading structures - Google Patents

Abstract

An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer (14), improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintaining the enhanced current injection. The invention is particularly applicable to LEDs having insulating substrates (12) but can also reduce the series resistance of LEDs having conductive substrates. The improved structures comprise conductive fingers (20a, 20b, 22) that form cooperating conductive paths that ensure that current spreads from the contacts (19, 21), into the fingers (20a, 20b, 22) and uniformly spreads through the oppositely doped layers (15, 16). The current then spreads to the active layer (14) to uniformly inject electrons and holes throughout the active layer (14), which recombine to emit light.

Description

583774 經濟部智慧財產局員工消費合作社印製 A7 _B7_ 五、發明說明（1 ) 本案享有Tar*sa等人申請的臨時專利申請案60/168,338，申 請曰1999/12/01的優先權。 發明背景 發明範疇 本發明有關於發光二極體（LED)，且尤其有關於具有改良 電流分散結構之LED。 前案説明 LED是固態裝置的重要類型其可以將電流轉成光，其一般 包括半導體材料的活化層夾在2個相對摻雜層之間，一個是 p型而另一個是η型，在摻雜層的電接點上施加電流以使電 子及電洞從摻雜層注入活化層_，電子及電洞接著再合併以 產生光從活化層向四方射出，而且從LED的表面射出。 多數習用LED的缺點是與燈絲光相比，電流轉成光較沒有 效率，結果其即途時常僅限於指示電子裝置的燈之類的應 用，其中LED的模尺寸小於0.25 mm2而光功率小於1 0毫瓦 (mW)〇 惟近年來以氮化物材料製造的半導體發展已開發出高亮 度高效率的LED其可以在藍綠光譜區域中發光，且可用以 產生各色光，都之白光，可參考Nichia公司的白LED，料號 NSPW300BS，NSPW312BS等·，也可參考美國專利號59593 16 ，所有權人 Hayden，名稱 ” Multiple Encapsulation of Phosphor-LED Devices'這些發展已使固態發光器可用於發 光及信號應用，其需要高輸出功率及高發光量，這種應用 之一在交通號誌，目前的LED交通號誌是由單一 LED裝置的 -4 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)583774 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 _B7_ V. Description of the Invention (1) This case enjoys the priority of temporary patent application 60 / 168,338 filed by Tar * sa et al. BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to light emitting diodes (LEDs), and more particularly to LEDs having improved current dispersion structures. The previous case shows that LED is an important type of solid state device. It can convert current into light. It generally includes an active layer of semiconductor material sandwiched between two oppositely doped layers. One is p-type and the other is n-type. A current is applied to the electrical contacts of the hybrid layer to cause electrons and holes to be injected into the active layer from the doped layer. The electrons and holes are then combined to generate light that is emitted from the active layer to the four directions and is emitted from the surface of the LED. The disadvantage of most conventional LEDs is that compared with filament light, the current is less efficient in converting light into light. As a result, it is often limited to applications such as lamps that indicate electronic devices. Among them, the mode size of the LED is less than 0.25 mm2 and the light power is less than 1. 0 milliwatts (mW). However, in recent years, the development of semiconductors made of nitride materials has developed high-brightness and high-efficiency LEDs that can emit light in the blue-green spectral region and can be used to generate various colors of light, all of which are white light. Nichia's white LEDs, part numbers NSPW300BS, NSPW312BS, etc., can also refer to US Patent No. 5958916, owner Hayden, name "Multi Encapsulation of Phosphor-LED Devices' These developments have enabled solid state light emitters to be used in light emitting and signal applications It requires high output power and high luminous output. One of such applications is in traffic signals. The current LED traffic signals are -4 by a single LED device.-This paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 mm) (Please read the notes on the back before filling this page)

裝---I 訂--------- 583774 A7 _B7_ 五、發明說明（2 ) 合併陣列組成以得到高輸出功率，惟單一高功率LED裝置 能取代LED陣列者，較不複雜，成本較少而且更可靠。 一種增加LED的功率及發光量的方法是增加其大小及發光 表面積，惟習用以氮化物製造的LED大小受限於電流不能 有效從接點分散到活化層，p型氮化物製造的半導體材料的 傳導性較低，而且p型接點的電流僅分散到p型層中的有限 區域，電流不會分散到整個活化層，而且LED會產生區域 過熱因而使接點附近過早劣化。 η型氮化物製造的半導體材料是較佳的導體但是對於電流 的分散仍有一些阻力，因爲裝置大小增加時，材料一致的 將電流從η型接點分散出去的能力也減少，結果，氮化物製 造的LED大小受限於ρ型及η型層的電流分散特徵。 已開發出各種LED其結構可增加電流分散，可參考G.B. Stringfellow 及 M.G. Crawford (1997)，High Brightness Light Emitting Diodes· Semiconductors and Semimetals, Vol. 48, Pages 170- 178。這些裝置一般包括在傳導基板上成長的n型 磊晶層，具有一 LED活化層區域及ρ型層在η型層上成長， 傳導接點沈積在與磊晶層相對的傳導基板上，電流從ρ型接 點的中心朝向ρ型層的邊緣分散，且接著到達活化層，基板 與磊晶層相比是極厚的，結果分散入活化區域的總電流受 限於ρ型接點提供的分散，此基本結構對於小LED(約0.25 mm2)是有效的，但是不能擴展到大LED，爲了利於LED大 小的擴展，必須改良LED。 一種改良是增加ρ型層的厚度以減少其分散電阻，以便電 -5- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項耳填寫本頁)Installation --- I order --------- 583774 A7 _B7_ V. Description of the invention (2) Merging array components to obtain high output power, but a single high-power LED device can replace the LED array, which is less complicated. It is less expensive and more reliable. One way to increase the power and luminous capacity of LEDs is to increase their size and luminous surface area. However, the size of LEDs used in nitrides is limited by the fact that the current cannot be effectively dispersed from the contact to the activation layer. The conductivity is low, and the current of the p-type contact is only distributed to a limited area in the p-type layer. The current will not be distributed to the entire activation layer, and the LED will generate an area overheating, which will cause premature deterioration of the vicinity of the contact. Semiconductor materials made of η-nitride are better conductors, but there is still some resistance to the dispersion of current, because as the device size increases, the ability of the material to uniformly disperse the current from the η-type contact also decreases. As a result, the nitride The size of the manufactured LED is limited by the current dispersion characteristics of the p-type and n-type layers. Various LEDs have been developed whose structure can increase current dispersion, see G.B. Stringfellow and M.G. Crawford (1997), High Brightness Light Emitting Diodes · Semiconductors and Semimetals, Vol. 48, Pages 170- 178. These devices generally include an n-type epitaxial layer grown on a conductive substrate, having an LED activation layer region and a p-type layer grown on an n-type layer. Conductive contacts are deposited on a conductive substrate opposite to the epitaxial layer. The center of the p-type contact is dispersed toward the edge of the p-type layer, and then reaches the activation layer. The substrate is extremely thick compared to the epitaxial layer. As a result, the total current dispersed into the activation region is limited by the dispersion provided by the p-type contact. This basic structure is effective for small LEDs (about 0.25 mm2), but cannot be extended to large LEDs. In order to facilitate the expansion of LED sizes, LEDs must be improved. One improvement is to increase the thickness of the ρ-type layer to reduce its dispersion resistance, so that the paper size is compliant with China National Standard (CNS) A4 (210 X 297 mm) (please read the precautions on the back first to fill in this page)

IuMyL · n n a·.^ a— n 11 an 9 n atem —mmm §1 I— eamma · 經濟部智慧財產局員工消費合作社印製 583774 A7 B7___ 五、發明說明（3 ) 流能分散到LED的邊緣，這種方法可有效的增加LED面積， 但是LED擴展實際上受到限制，這是因爲p型層厚度不能無 止境的增加，而且對於以GaN製造的LED系統而言，p型材 料具有極低的傳導性，因此這種方法不實際。 另一種方法是將接點沈積在P型層表面的中心而薄的軸向 傳導指形物從接點延伸到表面的邊緣，接點的電流分散到 傳導指形物及下面的p型表面，雖然這是一種改良，但是 LED仍不能自由的擴展成大尺寸，因爲變大時軸向指形物 的末端之間的距離也增加，而且會到達一點在此距離會防 止電流分散到整個P型層，此結構也不能用於在絕緣基板上 製造LED。 經濟部智慧財產局員工消費合作社印製 在授予Nakamura等人的美國專利5,652,434號中揭示一種 結構可改良絕緣基板上成長的氮化物製造的LED的電流分 散，其包括絕緣基板上的LED結構，而η型層與基板相鄰而 且ρ型層在磊晶層表面上，因爲基板是絕緣的，所以接觸墊 不能用以將電流分散到基板及η型層，反之，LED結構的一 角餘刻到ρ型層，活化層，及部分η型層。接點沈積在#刻 區域以便接點上的電流能分散通過傳導的η型材料，爲了使 電流分散通過ρ型層而將半透明的電流分散層沈積在Ρ型層 上，ρ型接點沈積在LED角落的分散層上，而與η型接點相 對，ρ型接點的電流會分散通過分散層而到達它下面的Ρ型 層。 此結構可改良結構尺寸裝置中的分散電流，但是不能在 較大尺寸的LED中迅速分散電流，因爲ρ型層是LED表面， -6 - 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 583774 A7 B7 五、發明說明（4 ) (請先閱讀背面之注意事項寫本頁) 分散層應該儘可能的薄以便不能吸收射出的光，惟分散層 愈薄’其板電阻即愈大，因爲LED尺寸增加時板電阻會防 止電流充全分散通過P型層，所以分散層的板電阻可藉由使 用半透明金屬材料及/或增加其厚度的方式而減少，惟這些 改變會減少透明及增加光吸收，因而減少LED的光輸出。 而且，η型層中增加的分散電阻能產生過熱，及防止電流 完全的分散及一致的光輸出，爲了減少分散電阻，η型層的 厚度可隨著裝置尺寸的增加而增加，惟，這會大幅增加所 需的材料及處理時間，這都使得成本增加到無法接受的程 度。 發明總結 % 本發明提供一種改良LED具有新的電流分散結構，該改良 LED可以是標準尺寸或是擴展到大尺寸，以增加功率輸出 及發光f ’其新的電流分散結構提供小及大型LED的p型及 η型層中電流分散之改良，結果可改良注入LED活化層之電 洞及電子，因而改良其光發射效率及減少其串聯電阻及過 熱。 經濟部智慧財產局員工消費合作社印製 新的LED大致包括一 LED核心具有一磊晶成長p型及n型層 ’及ρ型與η型層間之系晶成長活化層，一第一電流分散層 包括在LED核心相鄰處，至少一槽形成通過led核心至分散 層，而一第一接點具有至少一第一傳導.指形物在該槽之第 一分散層上，電流從第一接點流入其傳導指形物，第一分 散層及LED核心。一第二接點具有至少一第二傳導指形物 包括在與第一傳導層相對之LED核心上，俾電流能從第二 本紙張尺度適用中國國家標準（CNS)A4規格（210 χ 297公釐） 583774 經濟部智慧財產局員工消費合作社印製 A7 _B7_ 五、發明說明（5 ) 接點流入其第二指形物及LED核心。 新的LED也能包括一第二分散層在與第一分散層相對之 LED核心上，其位於第二接點與指形物之間，及LED核心， 分散層比其相鄰之LED核心層更具有傳導性，以使電流更 自由地從接點及指形物流入第二分散層及整個LED核心。 在新LED的實施例中，第一分散層是一 η型磊晶層且成長 在一基板上，俾t於基板與LED核心之間。一透明或半透 明第二分散層沈積在與第一分散層相對之LED核心表面， 而第二接點及其指形物形成在第二分散層上。 LED的接點及其各傳導指形物之設置可提供改良之電流分 散及電洞及電子注入LED之活牝層。在接點施加偏壓，分 散電流從各接點至其各傳導指形物，相鄰第一及第二指形 物間之距離維持在近似一致且夠小俾電流會有效分散在 LED核心，此提供電流一致地注入LED核心之活化層，使用 該新的電流分散結構，新的LED即可縮放成遠比習用LED大 之尺寸，同時維持相鄰指形物間之相同電流分散關係。 LED核心上之接點及指形物未蓋住核心之整個表面，而是 留下大部分表面供光發射，結果，可以在指形物中使用厚 且低電阻之金屬以提供迅速之電流分散路徑，這些指形物 也可減少電流必須在第二分散層中分散之距離，因此可減 少電流分散層之厚度，其減少發射光之·吸收，而且，藉由 在第二分散層上提供至少一指形物以分散電流至LED核心 ，層之厚度即不必因LED大小增加而增加，因而避免厚磊 晶層相關之長處理時間及高成本。 -8- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) F.^^ · 11 ^-----. 11------IuMyL · nna ·. ^ A— n 11 an 9 n atem —mmm §1 I— eamma · Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 583774 A7 B7___ 5. Description of the invention (3) Flow energy is scattered to the edge of the LED. This method can effectively increase the LED area, but the LED expansion is actually limited, because the thickness of the p-type layer cannot be increased endlessly, and for LED systems made of GaN, the p-type material has extremely low conductivity This method is not practical. Another method is to deposit the contact at the center of the P-type layer and the thin axial conductive fingers extend from the contact to the edge of the surface. The current of the contact is dispersed to the conductive finger and the p-type surface below. Although this is an improvement, the LED still cannot be freely expanded into a large size, because the distance between the ends of the axial fingers also increases when it becomes larger, and it will reach a point where this distance will prevent the current from spreading to the entire P-type This structure cannot be used to manufacture LEDs on an insulating substrate. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed in US Patent No. 5,652,434 to Nakamura et al. Discloses a current dispersion of a nitride-made LED whose structure can improve the growth on an insulating substrate, which includes the LED structure on the insulating substrate, and The η-type layer is adjacent to the substrate and the ρ-type layer is on the surface of the epitaxial layer. Because the substrate is insulated, the contact pad cannot be used to distribute current to the substrate and the η-type layer. On the contrary, a corner of the LED structure is etched to ρ Type layer, activation layer, and some n-type layer. The contact is deposited in the #etched area so that the current on the contact can be dispersed through the conductive η-type material. In order to disperse the current through the ρ-type layer, a semi-transparent current-dispersion layer is deposited on the P-type layer, and the ρ-type contact is deposited. On the dispersion layer at the corner of the LED, as opposed to the n-type contact, the current of the p-type contact will be dispersed through the dispersion layer and reach the P-type layer below it. This structure can improve the current dispersion in the structure size device, but it cannot quickly disperse the current in the larger size LED, because the ρ-type layer is the surface of the LED. -6-This paper size applies to China National Standard (CNS) A4 specification (210 X 297 mm) 583774 A7 B7 V. Description of the invention (4) (Please read the notes on the back to write this page first) The dispersion layer should be as thin as possible so that it cannot absorb the emitted light, but the thinner the dispersion layer is, its plate resistance That is, the larger the LED resistance is, the larger the size of the LED will prevent the current from fully spreading through the P-type layer, so the sheet resistance of the dispersed layer can be reduced by using a translucent metal material and / or increasing its thickness, but these changes Will reduce transparency and increase light absorption, thus reducing the light output of the LED. In addition, the increased dispersion resistance in the η-type layer can generate overheating, and prevent the complete dispersion of the current and consistent light output. In order to reduce the dispersion resistance, the thickness of the η-type layer can be increased as the device size increases, but this will greatly increase Increasing the required materials and processing time has increased costs to unacceptable levels. Summary of the Invention The present invention provides an improved LED with a new current dispersion structure. The improved LED can be a standard size or extended to a large size to increase power output and light emission. The new current dispersion structure provides small and large LEDs. The improvement of current dispersion in the p-type and η-type layers can improve the holes and electrons injected into the LED active layer, thereby improving its light emission efficiency and reducing its series resistance and overheating. The new LED printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics generally includes an LED core with an epitaxial growth p-type and n-type layer, and a crystalline growth activation layer between the p-type and n-type layers, and a first current dispersion layer Including adjacent to the LED core, at least one slot is formed through the LED core to the dispersion layer, and a first contact has at least one first conduction. Fingers are on the first dispersion layer of the slot, and current flows from the first connection. The dots flow into its conductive fingers, the first dispersion layer, and the LED core. A second contact with at least one second conductive finger is included on the LED core opposite to the first conductive layer, and the current can be applied from the second paper standard to the Chinese National Standard (CNS) A4 specification (210 x 297 male) (%) 583774 Printed by A7 _B7_, a consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (5) The contact flows into its second finger and LED core. The new LED can also include a second dispersing layer on the LED core opposite the first dispersing layer, which is located between the second contact and the finger, and the LED core, the dispersing layer is more than the adjacent LED core layer It is more conductive so that current flows from the contacts and fingers more freely into the second dispersion layer and the entire LED core. In the embodiment of the new LED, the first dispersing layer is an n-type epitaxial layer and is grown on a substrate with 俾 t between the substrate and the LED core. A transparent or semi-transparent second dispersion layer is deposited on the surface of the LED core opposite to the first dispersion layer, and the second contacts and their fingers are formed on the second dispersion layer. The arrangement of the LED contacts and their conductive fingers can provide improved current dispersion and active layers for hole and electron injection into the LED. Apply bias to the contacts to disperse the current from each contact to its conductive fingers. The distance between adjacent first and second fingers is kept approximately the same and small enough. The current will be effectively dispersed in the LED core. This provides the current to be injected into the activation layer of the LED core uniformly. With the new current dispersion structure, the new LED can be scaled to a size much larger than the conventional LED, while maintaining the same current dispersion relationship between adjacent fingers. The contacts and fingers on the LED core do not cover the entire surface of the core, but leave most of the surface for light emission. As a result, thick and low-resistance metals can be used in the fingers to provide rapid current dispersion. These fingers can also reduce the distance that the current must be dispersed in the second dispersion layer, thus reducing the thickness of the current dispersion layer, which reduces the absorption and emission of light, and by providing at least the second dispersion layer A finger disperses the current to the LED core, and the thickness of the layer does not have to increase due to the increase in the size of the LED, thus avoiding the long processing time and high cost associated with thick epitaxial layers. -8- This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm) (Please read the precautions on the back before filling this page) F. ^^ · 11 ^ -----. 11- -----

經濟部智慧財產局員工消費合作社印製 583774 A7 -----________ 五、發明說明（6 ) 新的LED結構之優點可以在傳導及絕緣基板上實現，因爲 不論基板類型，新的結構都可提供近似/致的電流注入， 在此結構中也可以將蟲晶層配置倒置，而p型層係與第—分 散層相鄰之次一層而η型層在磊晶表面上，電流分散配置仍 維持相同，裝置大小增加時，本發明藉由增加指形物數目 而提供完全之可縮放裝置。 熟於此技術者配合附圖即可明了本發明的這些及其他特 徵及優點，其中： 附圖簡單説明 圖1是具有電流分散結構的新標準大小LED的立體圖； 圖2是圖1 LED的平面圖； 圖3是沿著圖2線3 - 3看去的剖面圖； 圖4是具有電流分散結構的新標準大小LED的平面圖，包 括第二分散層上的中心指形物及LED四周的第一分散層上 的指形物； 圖5是圖4 LED的剖面圖； 圖6是使用圖1新的電流分散結構的新型可縮放矩形led 的平面圖； 圖7是使用新的指狀多指形物LED電流分散結構的新型 LED的平面圖； 圖8是具有新的多指形物鋸齒電流分散結構的新型led的 平面圖； 圖9是新型LED的平面圖，該LED具有分支及指形物形成 傳導路徑從第二分散層的中心接點及第一分散層上的合作 (請先閱讀背面之注意事項再填寫本頁) 0 · n n i 1— I n I · I in ϋ I i^i · -9 -Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 583774 A7 -----________ V. Description of the Invention (6) The advantages of the new LED structure can be realized on conductive and insulating substrates, because the new structure can be used regardless of the substrate type Provide approximate / consistent current injection. In this structure, the worm crystal layer configuration can also be inverted, while the p-type layer is next to the first-dispersion layer and the η-type layer is on the epitaxial surface. Maintaining the same, as the device size increases, the present invention provides a fully scalable device by increasing the number of fingers. Those skilled in the art can understand these and other features and advantages of the present invention in conjunction with the accompanying drawings, in which: Brief description of the drawings Figure 1 is a perspective view of a new standard size LED with a current dispersion structure; Figure 2 is a plan view of the LED of Figure 1 ; Figure 3 is a sectional view taken along line 3-3 of Figure 2; Figure 4 is a plan view of a new standard size LED with a current dispersion structure, including a central finger on a second dispersion layer and the first around the LED Fingers on the dispersion layer; Figure 5 is a cross-sectional view of the LED of Figure 4; Figure 6 is a plan view of a new scalable rectangular LED using the new current dispersion structure of Figure 1; Figure 7 is a new multi-finger finger Plan view of a new type of LED with LED current dispersion structure; Figure 8 is a plan view of a new type of LED with a new multi-finger sawtooth current distribution structure; Figure 9 is a plan view of a new type of LED with branches and fingers forming a conductive path from The center contact of the second dispersion layer and the cooperation on the first dispersion layer (please read the precautions on the back before filling this page) 0 · nni 1— I n I · I in ϋ I i ^ i · -9-

/4 /4 五 經濟部智慧財產局員工消費合作社印製 、發明說明（7 ) 指形物； 圖1 0是圖9 LED的剖面圖； 圖11是新型LED的平面圖，該LED具有指形物從第二分散 層上的中心接點放射出；及 圖1 2是新型LED的剖面圖，在正反器晶片幾何中具有新 的電流分散結構。 爱二明詳細説明 訂 鐮 圖1到1 2顯示根據本發明製造的新LED的各實施例，各具 有改良的電流分散結構，新的結構可用在由任何半導體材 料系統製造的LED中，但是特別適用於群in氮化物的LED其 在基板（如碳化碎（SiC)或石墨_上）製造，SiC具有的晶格與 群III氮化物如GaN極爲接近，因而使群in氮化膜的品質變 问’後化石也具有極高的導熱性以便群III氮化物裝置在碳 化石夕上的總輸出功率不受基板（如石墨上形成的某些裝置） 的散熱限制，Sic 基板是由 Cree Research，Inc·，of Durham， North Carolina製造，而其製造方法可參考以下科學文章如 美國專利 34,861，4,946,547及5,200,022號。 圖1，2及3顯示一新的正方形LED 1 〇具有：傳導層j J， 表不第一分散層，位於基板12與LED核心1 3之間，核心1 3 包括磊晶成長的活化層1 4位於磊晶成長傳導層1 5與丨6之間 ，傳導層15與第一分散層11的類型相同（11或？），而傳導層 1 6是另一類型（n或p )，在較佳實施例中，層1 5是^型，層 16是ρ型，及第一分散層是η型。 第一分散層1 1的厚度及掺雜位準有利於電流分散到活化 10- 本紙張尺度適用中國國家標準（CNS)A4規格（21〇χ 297公f ) 583774 A7 ____B7_ 五、發明說明（8 ) 層1 4，較佳的摻雜位準是le 15 cm-3至le21 cm·3而較佳厚度 是0.2 μιη至100 μιη，層1 1，1 4，1 5，1 6可用習用方法如 MOCVD反應器中成長，或成長技術如VPE及MOCVD的合 併等在基板12上製造。 電流分散層1 8表示第二分散層沈積在傳導1 6以利於傳導 層1 6的電流分散且進入活化層1 4。此層1 8可以是MOCVD 成長半導體與傳導層1 6的摻雜型相同，而厚度範圍及掺雜 範圍與第一分散層11類似，第二分散層18也是由透明或半 透明傳導材料製造，較佳的材料是薄金屬或總厚度是1 到50 nm的薄金屬合併，或是透明導體如IT0其可以較厚。 具有2個第二傳導指形物20a及20b的第二接點1 9沈積在第 二分散層1 8上/第二接點及指形物伸入傳導層邊緣的相鄰 處’形成U型路徑而伸到接點1 9的相對邊，指形物20a及 20b的外圍能伸到傳導層1 6的偏緣，或是從偏緣退回一些以 便第一分散層1 8的一小部分顯示在指形物20a與20b之間。 爲了強化電流均勻的分散在裝置，第一接點2 1及第一傳 導指形物2 2沈積在第一分散層1 1的表面，爲了在此表面上 提供一區域而蝕刻部分的LED核心直到第一分散層1 1，導 致槽/通道2 3穿過LED核心，第一接點2 1及指形物2 2沈積 在槽中的第一分散層上。 可使用習用方法（如化學或離子磨姓刻法）而银刻led核心 1 3，傳導層1 8，接點i 9及2 1，及其指形物可以用許多習 用方法（如蒸發，濺擊或電鍍）而沈積。 操作時施加偏壓到接點i 9及2 1，接點2 1的電流分散到其 -11 - 本纸張尺度適用中國國家標準（CNS)A4規格（2ι〇 χ 297公釐） (請先閱讀背面之注意事項再填寫本頁) :s· ,1 · n ϋ 1 n ϋ ϋ· n 一口、i ϋ ϋ ·ϋ ·ϋ ϋ n ϋ · 經濟部智慧財產局員工消費合作社印製 583774 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（9 指形物2 2及傳導第一分散層1 1 ’電流分散到第一分散層1 1 ，而載體近似一致的注入LED活化區域1 4及層1 5，電流從 接點1 9分散入指形物20a及20b，且接著到達第二分散層} 8 ’而載體近似一致的注入LED活化區域14至層16，電子及 電洞在活化層1 4合併以提供近似一致且極迅速的光發射。 新的LED 10及其電流分散結構可具有許多不同形狀及大 小，圖1到3顯示一正方形的LED，其可以是標準大小（約 0·25 mm2)，或較小（或較大），LED 10的大小增加時，傳導 指形物之間的距離也增加，其大小受限於電流從指形物分 散及提供一致注入活化層的能力。 較佳的電流分散指形物具有片狀的矩形，第二指形物的 寬度從0 · 1微米到3 0微米，而較佳寬度是2到丨〇微米，較寬 的指形物能有效的分散電流，但是會阻止或吸收更多從p型 層16射出的光，第一指形物的寬度範圍是〇：1_3〇微米，較 寬的指形物需要蝕刻更多的LED結構到磊晶層，以減少活 化層能發射光的量，第一與第二指形物之間的指形物可以 從5到5〇〇微米，距離愈小電流分散層中的電流分散愈佳， 但是光吸收指形物會蓋住更多的區域，指形物的厚度從 〇·〇5到3微米，指形物愈厚其_聯電阻愈低，但是其製造時 間較長而且成本更高。 新t結構提供比習用更多的優點，接點19及21，及其各 傳導‘形物2Ga，2Gb及22是由低率聯電阻的傳導材料製造 、，從接點流到指形物的電流的分散電阻較小，且提供一迅 速路徑以分散電流，而且，電流從電流分散接點”及其指/ 4/4 Printed and invented by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (7) Fingers; Figure 10 is a cross-sectional view of the LED of Figure 9; Figure 11 is a plan view of the new LED, which has a finger It is radiated from the central contact on the second dispersion layer; and FIG. 12 is a cross-sectional view of the novel LED, which has a new current dispersion structure in the flip-flop geometry. Ai Erming explains in detail. Figures 1 to 12 show various embodiments of new LEDs made according to the present invention, each with an improved current dispersion structure. The new structure can be used in LEDs made from any semiconductor material system, but in particular The LED suitable for group in nitride is manufactured on a substrate (such as SiC or graphite). The crystal lattice of SiC is very close to the group III nitride such as GaN, so the quality of the group in nitride film is changed. Q'The rear fossil also has extremely high thermal conductivity so that the total output power of the Group III nitride device on the carbide is not limited by the heat dissipation of the substrate (such as some devices formed on graphite). The Sic substrate is made by Cree Research. Inc., of Durham, North Carolina, and its manufacturing method can refer to the following scientific articles such as US Patent Nos. 34,861, 4,946,547 and 5,200,022. Figures 1, 2 and 3 show a new square LED 10 with: a conductive layer j J, representing the first dispersion layer, located between the substrate 12 and the LED core 1 3, the core 1 3 including an epitaxially grown activation layer 1 4 is located between the epitaxial growth conductive layer 15 and 6; the conductive layer 15 is the same type (11 or?) As the first dispersion layer 11, and the conductive layer 16 is another type (n or p). In the preferred embodiment, the layer 15 is a ^ -type, the layer 16 is a ρ-type, and the first dispersion layer is η-type. The thickness and doping level of the first dispersion layer 1 1 are conducive to the current dispersion to the activation 10- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21〇χ 297 公 f) 583774 A7 ____B7_ V. Description of the invention (8 ) Layer 14, the preferred doping level is le 15 cm-3 to le21 cm · 3 and the preferred thickness is 0.2 μm to 100 μm. Layers 1, 1, 4, 1, 5, 16 can be used in conventional methods such as Growth in a MOCVD reactor, or a growth technology such as a combination of VPE and MOCVD, is fabricated on the substrate 12. The current dispersion layer 18 indicates that the second dispersion layer is deposited on the conductive layer 16 to facilitate the current dispersion of the conductive layer 16 and enter the active layer 14. This layer 18 may be the same doped type of the MOCVD grown semiconductor and the conductive layer 16, and the thickness range and the doped range are similar to the first dispersion layer 11, and the second dispersion layer 18 is also made of a transparent or translucent conductive material. The preferred material is a thin metal or a combination of thin metals with a total thickness of 1 to 50 nm, or a transparent conductor such as IT0 which can be thicker. A second contact 19 with two second conductive fingers 20a and 20b is deposited on the second dispersion layer 18 / the second contact and the fingers protrude into the adjacent edge of the conductive layer to form a U-shape The path extends to the opposite side of the contact 19, and the periphery of the fingers 20a and 20b can extend to the edge of the conductive layer 16 or retract from the edge so that a small portion of the first dispersion layer 18 is displayed on Between fingers 20a and 20b. In order to enhance the uniform dispersion of the current in the device, the first contacts 21 and the first conductive fingers 22 are deposited on the surface of the first dispersion layer 11 and a portion of the LED core is etched in order to provide an area on this surface until The first dispersion layer 11 causes the groove / channel 23 to pass through the LED core, and the first contact 21 and the finger 22 are deposited on the first dispersion layer in the groove. The conventional method (such as chemical or ion milling method) can be used, and the silver core 13, conductive layer 18, contacts i 9 and 21, and their fingers can be etched by many conventional methods (such as evaporation, splashing). Or electroplating). Apply bias voltage to contacts i 9 and 21 during operation, and the current of contact 21 is dispersed to -11-This paper size is in accordance with China National Standard (CNS) A4 (2ι〇χ 297 mm) (please first Read the notes on the reverse side and fill out this page): s ·, 1 · n ϋ 1 n ϋ ϋ · n sip, i ϋ ϋ · ϋ ϋ ϋ n ϋ · Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 583774 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs V. Invention Description (9 Fingers 2 2 and Conductive First Dispersion Layer 1 1 ′ The current is dispersed to the first Dispersion Layer 1 1, and the carrier is injected into the LED activation area approximately uniformly 1 4 and layer 15, the current is dispersed from the contacts 19 into the fingers 20a and 20b, and then reaches the second dispersion layer} 8 'and the carrier is injected approximately uniformly into the LED activation region 14 to layer 16, with electrons and holes in The active layers 14 are merged to provide approximately uniform and extremely rapid light emission. The new LED 10 and its current dispersion structure can have many different shapes and sizes. Figures 1 to 3 show a square LED that can be a standard size (about 0 · 25 mm2), or smaller (or larger), when the size of LED 10 increases, The distance between the guide fingers also increases, and its size is limited by the ability of the current to disperse from the fingers and provide consistent injection into the activation layer. The better current-dispersing fingers have a sheet-like rectangle, and the second finger The width is from 0.1 μm to 30 μm, and the preferred width is 2 μm to 0 μm. Wider fingers can effectively disperse the current, but will prevent or absorb more light emitted from the p-type layer 16 The width of the first finger is 0: 1-30 micrometers. Wider fingers need to etch more LED structures into the epitaxial layer to reduce the amount of light that the active layer can emit. The first and second fingers The fingers between the objects can be from 5 to 500 microns. The smaller the distance, the better the current dispersion in the current dispersing layer, but the light-absorbing fingers will cover more areas, and the thickness of the fingers will vary from 0.05 to 3 microns, the thicker the fingers, the lower the _ joint resistance, but the longer the manufacturing time and the higher the cost. The new t structure provides more advantages than conventional, contacts 19 and 21, and Each conductive 'shape 2Ga, 2Gb, and 22 are made of conductive materials with low rate resistance. The small finger was dispersed resistance of the current, and to provide a rapid path to disperse the current, and the current from the current dispersion point "and refers to

-12--12-

583774 A7 B7 五、發明說明（10 ) 形物2〇a及20b到完全在第二分散層18分散所需的距離極小 ，結果，可減少電流分散層的厚度，其能減少光吸收及增 加光輸出（若在第一分散層18中使用半透明材料），可維持 元全％ /;ιυ为欢到p型層1 6及一致注入活化層1 *，系晶與電 流分散指形物間的距離應該維持近似一致以確保各掺雜層 及活化層1 4的一致電流分散。 如上所述’第二指形物2 0a及20b會吸收部分LED的發射 光’而且LED核心的蝕刻以提供槽2 3會減少LED核心發射 光的大小’然而電流一致的注入活化層1 4可克服這些缺點 ，而使LED的整體效率增加，事實上槽2 3可增加總光輸出 ，這是因爲光是從LED的活化厚1 5向各處發射，以具有平 ••的表面的LED爲例，一部分的光會從LED表面反射而導致總 内部反射，光最後會被吸收或是從LED的側面射出，藉由 蚀刻LED結構以提供至少一槽，LED中的光反射能到達槽， 增加它LED的側面射出的機會，這可增加光會合及發射且 不被吸收的機率， 經濟部智慧財產局員工消費合作社印制衣 圖4及5顯示新LED 40的另一實施例其與圖1到3所示的 LED類似，它具有相同的基板12及第一分散層11，它也具 有類似的LED核心4 1及第二分散層4 2沈積在LED核心的傳 導層43上。 惟在此實施例中，第一接點及指形物將電流從第一分散 層1 1及第二接點的偏緣分散出去，而指形物將電流從第二 分散層4 2的中心分散出去，蝕刻LED核心4 1到第一分散層 1 1，在其四周的三個偏緣的LED周邊，第一接點4 4沈積在 -13- 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 583774 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明（11 ) 點的第一分散層，第一指形物45a及伙沈 和在第分散層11，而且在蝕刻側以相反方向從第一接點 4 4延伸，從第一接點4 4分散到第一分散層四周的電流通過 指形物45a及45b，第二接點46沈積在與第一接點44相對偏 、表的第一分散層4 2上，它具有一傳導指形物其也沈積在第 一分散層，而且從接點4 6在磊晶層接點4 4的方向向多數的 LED中心線延伸。 LED 40具有與LED 10相同的電流分散優點，電流從接點 44，46分散通過其各傳導指形物（其具有低的串聯電阻）， 電流從第一接點44及其指形物45a及45b分散到第一分散層 11及LED核心41，電流從第二接點46及其指形物47分散到 第二分散層42及LED核心4 1，如同在LED 10，電流必須從 指形物4 7分散到第二分散層4 2以蓋住整個LED核心4 1的距 離即可減少。結果，第二分散層4 2的厚度可以減少，其減 少光吸收，第二指形物4 7與第一指形物45a及45b(其重疊） 的距離近似一致，而使電流更一致的注入LED核心的活化 層50。583774 A7 B7 V. Description of the invention (10) The distance required for the objects 20a and 20b to be completely dispersed in the second dispersion layer 18 is extremely small. As a result, the thickness of the current dispersion layer can be reduced, which can reduce light absorption and increase light. Output (if translucent material is used in the first dispersing layer 18), it can maintain the whole %%; ιυ is to the p-type layer 16 and the consistent injection of the activation layer 1 *, between the crystal and the current dispersion finger The distance should be kept approximately the same to ensure consistent current dispersion of the doped layers and the active layer 14. As mentioned above, "the second fingers 20a and 20b will absorb part of the LED's emitted light" and the etching of the LED core to provide the groove 2 3 will reduce the size of the LED core's emitted light. However, the current is injected into the activation layer 1 4 uniformly. Overcoming these shortcomings increases the overall efficiency of the LED. In fact, the slot 2 3 can increase the total light output. This is because the light is emitted from the activated thickness 15 of the LED to all places. The LED with a flat surface is For example, part of the light will be reflected from the surface of the LED to cause total internal reflection. The light will be absorbed or emitted from the side of the LED. By etching the LED structure to provide at least one slot, the light reflection in the LED can reach the slot, increasing Opportunity for the side of the LED to be emitted, which can increase the chance of light convergence and emission without being absorbed. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figures 4 and 5 show another embodiment of the new LED 40. The LEDs shown to 3 are similar. They have the same substrate 12 and the first dispersion layer 11, and they also have similar LED cores 41 and a second dispersion layer 42 deposited on the conductive layer 43 of the LED core. However, in this embodiment, the first contact and the finger disperse the current from the edges of the first dispersing layer 11 and the second contact, and the finger disperses the current from the center of the second dispersing layer 42. Disperse it, and etch the LED core 41 to the first dispersion layer 11. At the three peripheral edges of the LED around it, the first contact 4 4 is deposited at -13- This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 583774 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention (11) The first dispersion layer of the point, the first finger 45a and the Shen Shenhe in the first dispersion layer 11, and extends from the first contact 44 in the opposite direction on the etched side, and the current dispersed from the first contact 44 to the periphery of the first dispersion layer passes through the fingers 45a and 45b, and the second contact 46 is deposited on the contact with The first contact 44 is relatively deviated from the surface of the first dispersion layer 42. It has a conductive finger which is also deposited on the first dispersion layer, and is in the direction of the epitaxial layer contact 44 from the contact 46. Extends to most LED centerlines. The LED 40 has the same current spreading advantages as the LED 10. The current is dispersed from the contacts 44, 46 through its conductive fingers (which has a low series resistance), and the current from the first contact 44 and its fingers 45a and 45b is dispersed to the first dispersion layer 11 and the LED core 41, and the current is dispersed from the second contact 46 and its fingers 47 to the second dispersion layer 42 and the LED core 41. As in LED 10, the current must be from the fingers The distance that 4 7 is dispersed to the second dispersion layer 42 to cover the entire LED core 41 can be reduced. As a result, the thickness of the second dispersion layer 42 can be reduced, which reduces light absorption, and the distance between the second finger 47 and the first fingers 45a and 45b (which overlap) is approximately the same, so that the current is injected more uniformly. LED core activation layer 50.

新電流分散結構的重要優點是它能用在較大LED之中且同 時維持改良的電流分散，圖6顯示的新LED 60具有的電流分 散結構與圖1，2及3的LED 10類似，LED 60具有：基板， 第一分散。，LED核心（其在圖6中都未示），及第二分散層 6 1，其都與LED 10的類似，部分的LED核心餘刻到第一分 散層以沈積η型接點6 2及指形物6 3，第二接點6 4及其傳導 指形物65a及65b也沈積在第二分散層61上，而指形物在LED -14- 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I 響裝 訂i丨 (請先閱讀背面之注意事項再填寫本頁) 583774 A7 B7 五、發明說明（ 12 經濟部智慧財產局員工消費合作社印制π 的四周延伸。 LED 60比具有矩形形狀的LED 1〇大，而其侧邊66，^之 中2個的長度則增加，改良的電流分散可藉由增加第一指形 物63及第二指形物65a及65b的長度而維持，該增加量與侧 邊6 6，6 7的增加量相同。第一指形物6 3與第二指形物6允 及65b(其重疊）之間的距離維持一致，電流必須從第二指形 物6 5 a及6 5 b分散到電流分散層6 i以蓋住整個L E D核心的距 離也維持一定，類似的電流必須從第一指形物63分散到第 一分散層的距離也維持一定，若側邊66，67的長度又增加 ，指形物的長度也必須增加以維持指形物之間的電流關係。 根據圖4，5的設計可產生類似的矩形LED，在這些裝置 中，電流分散結構中的指形物長度必須依此增加以便在矩 形LED中提供一致的電流分散。 LED 60的又一優點是與具有相同表面積的方形led相比 其散熱更迅速，LED 60產生的熱到達可以散熱的一邊所走 的距離較短。 與習用相比本發明的另一重要優點是第一分散層厚度， 此層一般是η型磊晶層而且在習用LED中，當電流從接點經 由第一分散層而分散時，LED大小的增加時第一分散層即 必須增加以減少其_聯電阻，藉由將電流從第一接點分散 通過至少一傳導第一指形物，即可避免啤聯電阻增加，第 一分散層厚度可維持相同，以避免可能的處理時間及成本 增力口。 另-種縮放LED同時維持傳導指形物之間電流分散關的方 (請先閱讀背面之注意事項巧填寫本頁) F3· ---I----訂· I ------ % -15- 583774 A7The important advantage of the new current dispersion structure is that it can be used in larger LEDs while maintaining improved current dispersion. The new LED 60 shown in Figure 6 has a current distribution structure similar to that of LED 10 in Figures 1, 2 and 3. 60 has: a substrate, a first dispersion. , The LED core (which is not shown in FIG. 6), and the second dispersion layer 61, which are similar to the LED 10, part of the LED core is left to the first dispersion layer to deposit n-type contacts 62 and The fingers 6 3, the second contact 64, and their conductive fingers 65a and 65b are also deposited on the second dispersion layer 61, and the fingers are on the LED -14. This paper size applies the Chinese national standard (CNS ) A4 size (210 X 297 mm) I ring binding i 丨 (Please read the precautions on the back before filling this page) 583774 A7 B7 V. Invention Description (12 Printed around π by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs The LED 60 is larger than a rectangular LED 10, and the length of two of the side edges 66, ^ is increased, and the improved current dispersion can be increased by adding the first finger 63 and the second finger The length of 65a and 65b is maintained, and the increase is the same as that of the sides 6 6, 67. The distance between the first finger 63 and the second finger 6 and 65b (the overlap) is maintained. Consistent, the distance that the current must be dispersed from the second fingers 6 5 a and 6 5 b to the current dispersion layer 6 i to cover the entire LED core is also maintained constant A similar current must be dispersed from the first finger 63 to the first dispersion layer. If the length of the sides 66 and 67 is increased, the length of the finger must also be increased to maintain the distance between the fingers. Current relationship. Designs according to Figures 4 and 5 can produce similar rectangular LEDs. In these devices, the length of the fingers in the current dispersion structure must be increased in order to provide consistent current dispersion in the rectangular LEDs. One advantage is that the heat is dissipated more quickly than a square led with the same surface area, and the distance that the heat generated by the LED 60 reaches the side that can dissipate heat is shorter. Another important advantage of the present invention is that the first dispersion layer Thickness, this layer is generally an η-type epitaxial layer and in conventional LEDs, when the current is dispersed from the contact through the first dispersion layer, the first dispersion layer must increase when the size of the LED increases, By dispersing current from the first contact through at least one conductive first finger, the increase in beer resistance can be avoided, and the thickness of the first dispersion layer can be maintained the same to avoid possible processing time and cost Zenglikou. Another way to scale the LED while maintaining the current dispersion between the conductive fingers (please read the precautions on the back and fill in this page first) F3 · --- I ---- Order · I- ----% -15- 583774 A7

583774 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（14 ) ，指形物8 4開始時以直角從分支8 3凸出，接著在凸出到 LED 8 0上時即以直角交替的鋸齒，指形物愈短，直角鋸齒 的次數即愈少。 LED 8 0也沈積在到其第一分散層以提供供第一接點8 5， 其分支8 6及其鋸齒指形物8 7等用的槽，第一接點8 5沈積在 第一分散層與第二接點8 1相對的LED的角落，傳導分支8 6 也沈ί貝在弟一分散層伙弟一接點8 5繞著LED 8 0四周沿著二 側而延伸，但是電流分散層分支8 3未將其蓋住，具有與電 泥分散層指形物8 4相同形狀的第一鋸齒指形物§ 7也沈積在 指形物84之間的第一分散層，以便第一與第二指形物（重疊 )之間的距離近似一致，該想法—的另一實施例能使用彎曲指 形物以產生据嵩圖案其具有圓角而不是直角。 此結構具有上述實施例中所有電流分散的優點，包括低 的串聯電阻，可縮放，及能使用薄的電流分散層。第一指 形物8 7的LED結構中蚀刻的据齒槽也可進一步改良從LED 8 0射出的光。槽邊的變化比上述實施例大，在而增加内部 反射光從LED射出的機率。 圖9，1 0顯示新LED 90的另一矩形實施例，其具有與上 述實施例相同的層狀結構，第二接點9 1沈積在第二分散層 9 2的中心，而傳導分支9 3的2個部分在第二分散層以相反 的方向從接點9 1延伸到達LED的縱向中·心線，各傳導指形 物9 4以直角從分支9 3的2側向LED的偏緣凸出，爲了將電 流分散到LED的第一分散層，而在其四周蝕刻LED結構到達 第一分散層。第一接點9 5沈積在LED偏緣的第一分散層上 -17- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項馬填寫本頁) C5·. 裝583774 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the Invention (14), the fingers 8 4 project from the branch 8 3 at a right angle at the beginning, and then project at a right angle when they protrude onto the LED 80. Alternate sawtooth, the shorter the finger, the less the number of right-angle sawtooth. The LED 80 is also deposited on its first dispersion layer to provide slots for the first contacts 85, its branches 86 and its serrated fingers 87, etc., and the first contacts 85 are deposited on the first dispersion In the corner of the LED opposite to the second contact 8 1, the conductive branch 8 6 also sinks in the first layer. The first contact 8 5 extends around the LED 8 0 along the two sides, but the current is dispersed. The layer branch 8 3 is not covered, and the first zigzag finger having the same shape as the electrode dispersion layer finger 8 4 is also deposited in the first dispersion layer between the fingers 84 so that the first Approximately consistent with the distance between the second fingers (overlapping), another embodiment of the idea—bent fingers can be used to produce a pattern with rounded corners instead of right angles. This structure has all the advantages of current dispersion in the above embodiments, including low series resistance, scalability, and the ability to use thin current dispersion layers. The grooves etched in the LED structure of the first finger 87 can further improve the light emitted from the LED 80. The change of the groove edge is larger than that in the above embodiment, and the probability of the internal reflected light from the LED is increased. FIG. 9 and FIG. 10 show another rectangular embodiment of the new LED 90, which has the same layered structure as the above embodiment, the second contact 91 is deposited in the center of the second dispersion layer 92, and the conductive branch 9 3 The two parts in the second dispersion layer extend from the contact 9 1 in the opposite direction to the longitudinal centerline of the LED, and each conductive finger 9 4 projects at a right angle from the 2 side of the branch 9 3 to the edge of the LED. In order to distribute the current to the first dispersion layer of the LED, the LED structure is etched around it to reach the first dispersion layer. The first contact point 9 5 is deposited on the first dispersing layer of the edge of the LED -17- This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the precautions on the back first and fill in this Page) C5 ·.

I I I 一 —^· H· -1__1 H· ϋ n ϋ— ϋ II I I I — ^ · H · -1__1 H · ϋ n ϋ— ϋ I

583774 A7 ______ B7 五、發明說明（15 ) ，第一分支96沈積在LED的整個四周的第一分散層上，以 提供從接點95開始的連續傳導迴路。槽也蝕刻在第二指形 物9 4之間的LED結構中，以直角從四周朝向分支9 3，第一 指形物9 7也沈積在槽中的第一分散層上，提供從第一分支 9 6開始的傳導路徑。相鄰的第一與第二指形物（重疊）之間 的距離，維持近似一致，而且此實施例具有與上述實施例 相同的電流分散優點。 圖1 1顯示新LED' 110的另一實施例其具有與上述實施例相 同的層狀結構’弟一接點111沈積在LED的第二分散層112的 中心’傳導指形物113從第二分散層Π 2的接點111凸出，朝 向LED的偏緣且在指形物！ 13的，始點之間具有一致的距離 。當其從接點111凸出時，相鄰指形物之間的距離即增加。 當該距離變的過大而不能有效在第二分散層1 12中分散電流 時，指形物113即分成2個指形物114。 將LED蝕刻到其四周的第一分散層上以供第一接點1丨5及 其四周分支116用，也蝕刻它以供第一指形物117用以形成 第二接點111方向中而且在第二指形物113之間的傳導路徑 ，若指形物114的分割部分也夠長，則第一指形物會包括在 它們之間。 相鄰的第一與第二指形物之間的距離的變化比上述實施 例大，惟距離仍維持夠一致因此LED 11〇具有與上述實施例 相同的電流分散優點，此實施例也可縮放成大的尺寸，表 面積增加時第二指形物也持續分割，其中另一第一指形物 包括在該等分割部分之間。 (請先閱讀背面之注意事項巧填寫本頁) 裝 1« n ϋ n 一窗I MM ·Μ> MM I » 經濟部智慧財產局員工消費合作社印製 -18-583774 A7 ______ B7 5. Description of the Invention (15), the first branch 96 is deposited on the first dispersed layer around the LED to provide a continuous conduction loop from the contact 95. The grooves are also etched in the LED structure between the second fingers 9 4, and they are branched at right angles from all sides to the branches 9 3. The first fingers 97 are also deposited on the first dispersion layer in the grooves, providing Conduction path starting from branch 9 6. The distance between adjacent first and second fingers (overlapping) is kept approximately the same, and this embodiment has the same current spreading advantages as the previous embodiment. FIG. 11 shows another embodiment of the new LED '110 which has the same layered structure as the above embodiment,' the first contact 111 is deposited in the center of the second dispersed layer 112 of the LED 'and the conductive fingers 113 from the second The contact 111 of the dispersion layer Π 2 protrudes toward the biased edge of the LED and is on a finger! At 13, there is a consistent distance between the starting points. When it protrudes from the contact 111, the distance between adjacent fingers increases. When the distance becomes too large to effectively disperse the current in the second dispersion layer 112, the fingers 113 are divided into two fingers 114. The LED is etched onto the first dispersion layer around it for the first contact 1 5 and its surrounding branches 116, and it is also etched for the first finger 117 to form the second contact 111 and For the conductive path between the second fingers 113, if the divided parts of the fingers 114 are also long enough, the first fingers will be included between them. The change in the distance between adjacent first and second fingers is larger than the above embodiment, but the distance is still consistent enough. Therefore, LED 110 has the same current dispersion advantage as the above embodiment, and this embodiment can also be scaled. As the size increases, the second finger continues to divide as the surface area increases, with another first finger included between the divided parts. (Please read the precautions on the back and fill in this page first) Pack 1 «n ϋ n One window I MM · MM > MM I» Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -18-

經濟部智慧財產局員工消費合作社印製 583774 A7 B7 五、發明說明（16 ) 該等實施例也能在透明基板及裝在上面的正反晶片上成 長，圖1 2顯示在透明基板123上成長的LED 120，其具有與 圖4 LED 40相同的結構’它包括第一分散層126上的LED核 心1 j 0 ’及LED核心上的第二分散層124(及第一分散層相對） ，LED藉由接合媒體121的使用而裝在低層丨22，以連接第一 分散層124(圖1 2)或第二分散層上的接墊與傳導層127的第 一部分，其也在最後點與接合媒體121之間，向傳導層127 施加偏壓以使電流流入第二分散層124及LED的活化區域。 傳導層（接點128)的第二部分也在最後點上，而第二接合媒 體125連接第一分散層126上的第一接點129與傳導層1 2 8， 向傳導層12 8施加偏壓以使電流流入第一接點^ 2 9其接著將 電流經由第一指形物13 1而流入第一分散層丨26。第一指形 物也位於第一分散層的四周，傳導層127，128與最後點122 電的絕緣，以作爲LED裝封的連接點。 此結構的優點是LED的散熱性較佳，因爲LED產生的熱接 近接合介面121的表面，而且熱可有效的傳到低層122，低 層能具有高的導熱性而且表面積比LED晶片基板123大，而 且若半透明層在第二分散層124中使用，則正反晶片幾何會 使反射器與半透明層一體成型以減少第二分散層124的整體 光損失’而且將光反射到基板丨23。 而且因馬反射益位於第二分散層，所以第二接點及指形 物不會吸收任何射出的光，可增加其厚度以減”聯電阻 ，而且其不會吸收射出的光’而且若反射表面會導電，則 可以將接合媒體121接到整個反射器表面，以增加整個結構 19-Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperative, 583774 A7 B7 V. Description of the invention (16) These embodiments can also grow on transparent substrates and front and back wafers mounted on them. Figure 12 shows growth on transparent substrate 123 The LED 120 has the same structure as the LED 40 in FIG. 4 'It includes an LED core 1 j 0 on the first dispersion layer 126 and a second dispersion layer 124 (and the first dispersion layer opposite) on the LED core. The LED It is mounted on the lower layer by the use of the bonding medium 121 to connect the pad on the first dispersion layer 124 (FIG. 12) or the second dispersion layer to the first portion of the conductive layer 127, which is also bonded to the last point. Between the media 121, a bias is applied to the conductive layer 127 so that a current flows into the second dispersion layer 124 and the active area of the LED. The second part of the conductive layer (contact 128) is also at the last point, and the second bonding medium 125 connects the first contact 129 on the first dispersion layer 126 and the conductive layer 1 2 8 to bias the conductive layer 12 8 Pressure to make the current flow into the first contact ^ 2 9 which then flows the current into the first dispersion layer 26 through the first finger 13 1. The first fingers are also located around the first dispersion layer, and the conductive layers 127, 128 are electrically insulated from the last point 122 to serve as connection points for the LED package. The advantage of this structure is that the heat dissipation of the LED is better, because the heat generated by the LED is close to the surface of the bonding interface 121, and the heat can be efficiently transferred to the lower layer 122, which can have high thermal conductivity and a larger surface area than the LED chip substrate 123. Moreover, if a translucent layer is used in the second dispersion layer 124, the front and back wafer geometries will make the reflector and the translucent layer integrally formed to reduce the overall light loss of the second dispersion layer 124 and reflect the light to the substrate 23. And because the horse reflection benefit is located in the second dispersion layer, the second contact and fingers will not absorb any emitted light, which can increase its thickness to reduce the "resistance, and it will not absorb the emitted light 'and if it reflects The surface will be conductive, you can connect the bonding medium 121 to the entire reflector surface to increase the entire structure 19-

583774 A7 B7 17 五、發明說明（ 的導熱性。 上述實施例可成長在傳導及絕緣基板上，這是依使用的 材料系統而定。通常以傳導基板（如碳化矽）上形成的led 而S，接點是直接沈積在與磊晶層相反的傳導基板上。接 墊上的電流分散通過基板而到達η型層，其提供大致一致的 電子注入該活化層。或者可以用類似於上述的方式蝕刻 LED核心，而且必要時可以在傳導基板持續作蝕刻，若基 板是傳導，則可將它視爲第一分散層的一部分。 使用接點指形物陣列而不是習用的基板接墊，即可減少 一極體的串聯電阻，第一，可以使接點電阻減少因爲可以 在第二分散層（與基板相對）使用較佳材料，第二，電流於 到達活化區域之前必須走過的距離比接點基板相比是極小 且具有許多的平行路徑，以再度減少争聯電阻，材料及接 點的細節可決定那一種方法可提供最後的電阻。 雖然已參考本發明的一些較佳配置而詳細説明本發明， 但是它種形式也是可能，傳導指形物可具有許多不同形狀 及圖案，且能以不同方式沈積在LED層，因此後附申請專 利的範圍及精神不僅限於上述的較佳實施例。 (請先閱讀背面之注意事項再填寫本頁) t 訂---------· 經濟部智慧財產局員工消費合作社印製583774 A7 B7 17 V. Thermal conductivity of the invention (The above embodiments can be grown on conductive and insulating substrates, depending on the material system used. Usually leds formed on conductive substrates (such as silicon carbide) and S The contact is directly deposited on the conductive substrate opposite to the epitaxial layer. The current on the pad is dispersed through the substrate to reach the n-type layer, which provides approximately uniform electron injection into the active layer. Or it can be etched in a similar manner as described above The LED core can be continuously etched on the conductive substrate if necessary. If the substrate is conductive, it can be considered as a part of the first dispersion layer. Use a contact finger array instead of the conventional substrate pad to reduce The series resistance of a pole body, first, can reduce the contact resistance because a better material can be used in the second dispersion layer (as opposed to the substrate), and second, the distance that the current must travel before reaching the activation area is greater than the contact The substrate is extremely small and has many parallel paths to reduce the contention resistance again. The details of materials and contacts can determine which method can provide the final Although the present invention has been described in detail with reference to some preferred configurations of the present invention, other forms are also possible. The conductive fingers can have many different shapes and patterns, and can be deposited on the LED layer in different ways. The scope and spirit of applying for a patent are not limited to the above-mentioned preferred embodiments. (Please read the notes on the back before filling out this page) t Order --------- · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs

Claims (1)

583774 ABCD \ly 月 7 年 案(91 請本 申正 利修 圍 號範 6 N 61專 25請 9申 08文 第中一 六、申請專利範圍 1· 一種具有改良電流分散結構之可縮放發光二極體（LED) ，包括： 一 LED核心（1 3),具有： 一蟲晶成長ρ型層（16); 一磊晶成長η型層（15);及 該Ρ型層與η型層（16，18)間之磊晶成長活化層（14) f 一第一電流分散層（11)與該LED核心（13)相鄰； 至少一槽（23)通過該LED核心（13)到達該第一分散層 (11); 一第一接點（21)具有至少一第一傳導指形物（22)在該 至少一槽（23)中之第一分散層（11)上，俾電流從該第一 接點（21)流入該至少一第一傳導指形物（22)，該第一分 散層（11)，及該LED核心（13); 一第二接點（19)具有至少一第二傳導指形物（20a， 20b)在與該第一分散層（11)相對之該LED核心（13)上， 俾電流從該第二接點（19)流入該至少一第二指形物（20a ，20b)及該 LED核心（13)。 2. 如申請專利範圍第1項之LED，其中該至少一第二傳導 指形物（20a，20b)及該至少一第一傳導指形物（22)在其 部分長度中互相具有約一致之距離，以提供近似一致之 電流注入該LED核心（13)。 3. 如申請專利範圍第1項之LED，更包括一基板（12)與該 第一分散層（11)相鄰且相對於該led核心（13)。 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公爱） 583774 A8 B8 C8 一 —__ D8 、申請專利範圍 4 · 如申請專利範圍第1項之LED，更包括一第二分散層 (16)在與該第一分散層（11)相對之該LED核心（Π)上， 該第二接點（19)及該至少一傳導指形物（20a，20b)位於 該第二分散層（16)，俾施加該接點（19)之電流分散到該 至少一傳導指形物（20a，20b)及通過該第二分散層（16) 而流入該LED核心（13)。 5 . 如申請專利範圍第4項之LED，包括一該第一傳導指形 物（22)，其中該第二接點（19)及至少一傳導指形物（20a ，20b)形成一大致U型傳導路徑，該第一接點（21)及該 第一傳導指形物（22)在該U型路徑中形成一長形傳導路 徑。 6. 如申請專利範圍第4項之LED，包括複數個該第一及第 二傳導指形物（76，75)，該第二接點（？3)接近該LED之 一邊，而該第一接點（72)接近相對邊，該第二傳導指形 物（75)從該第二接點（73)朝著該相對偏緣形成複數個傳 導路徑，該第一傳導指形物（76)從該第一接點（72)朝著 該第二指形物（75)間之指狀第二接點（73)形成複數個傳 導路徑。 7. 如申請專利範圍第4項之LED，其中該第二接點（111)接 近該電流分散層（112)中心，而該第二傳導指形物（113 ，114)從該第二接點（111)朝著該LED偏緣形成傳導路 徑，而該第一傳導指形物（117)從該第一接點（115)朝著 該第二傳導指形物（113，114)間之指狀第二接點（1U)形 成傳導路徑。 -2- 本紙張尺度適用中國國家標準(CNS) A4規格(210x297公釐） D8 六、申請專利範圍 8 .如申請專利範圍第4項之LE D，其中該第二接點（91)接 近該電流分散層（92)中心，且更包括2個傳導分支（93) 以相反方向形成傳導路徑從該接點（91)向下到達該led 之中心線，該第二傳译指形物（94)大致與該分支（9 3) 正交，該第一指形物（97)從該第一接點（95)及從該LED 偏緣朝著該第二指形物（97)間之指狀分支（93)形成傳導 路徑。 9. 如申請專利範圍第4項之LED，包括複數個該第一及第 二傳導指形物（84，87)，其中該第二指形物（84)從該 第二接點（81)形成大致平行之鋸齒傳導路徑，而該第一 指形物（87)從該第二鋸齒指形物（84)間之指狀該第一接 點（85)形成大致平行之鋸齒傳導路徑。 10. —種使用正反晶片安裝且具有改良電流分散結構之可 縮放發光二極體（LED)，包括： 一 LED核心（130)，具有： 一系晶成長p型層； 一暴晶成長η型層；及 該Ρ型層與η型層間之磊晶成長活化層； 一第一電流分散層（126)與該LED核心（130)相鄰； 至少一槽通過該LED核心到達該第一分散層（126); 一第一接點（129)具有至少一第一傳導指形物（131)在 該至少一槽中之第一分散層（126)上，俾電流從該第一 接點（129)流入該至少一第一傳導指形物（131)，該第一 分散層（126)，及該LED核心（130); -3- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 583774 A8 B8 C8 D8 、申請專利範圍 一第二接點（124)與該LED核心（130)相鄰且與該第一 分散層（126)相對； 一傳導層具有2個不同部分（127，128)，該傳導層之 第一部分（127裝置）與該第二分散層接合； 一低層（122)與該傳導層之第一部分（127)相鄰，且相 對於該第二分散層（124)，該傳導層之第二部分（128)也 與該低層（122)相鄰，該LED更包括一傳導材料（125)在 該第二部分（128)與該接點(129)之間，一偏壓施加在該 傳導層之第一及第二部分（127，128)以使該LED核心 (130)發光。 -4- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)583774 ABCD \ ly month 7 year case (91, please apply for Zheng Lixiu No. 6 N 61 special 25, please apply for the 8th article in the 16th, the scope of the patent application 1. A scalable light-emitting diode with improved current dispersion structure The body (LED) includes: an LED core (1 3) having: an insect crystal growing p-type layer (16); an epitaxial growing n-type layer (15); and the P-type layer and the n-type layer (16 18) The epitaxial growth activation layer (14) f a first current dispersing layer (11) is adjacent to the LED core (13); at least one slot (23) reaches the first through the LED core (13) A dispersing layer (11); a first contact (21) having at least one first conductive finger (22) on a first dispersing layer (11) in the at least one slot (23); A contact (21) flows into the at least one first conductive finger (22), the first dispersion layer (11), and the LED core (13); a second contact (19) has at least one second A conductive finger (20a, 20b) on the LED core (13) opposite to the first dispersion layer (11), a thorium current flows from the second contact (19) into the at least one second finger ( 20a, 20b) and LED core (13) 2. As in the LED of the first patent application scope, wherein the at least one second conductive finger (20a, 20b) and the at least one first conductive finger (22) are in part of their length The LEDs have approximately the same distance to each other to provide approximately the same current to be injected into the LED core (13). 3. For example, the LED of the first patent application scope further includes a substrate (12) and the first dispersion layer (11). Adjacent to and opposite to the LED core (13). This paper size is applicable to Chinese National Standard (CNS) A4 specifications (210X 297 public love) 583774 A8 B8 C8 A — __ D8, patent scope 4 · If the scope of patent application is the first The LED of the item further includes a second dispersion layer (16) on the LED core (Π) opposite to the first dispersion layer (11), the second contact (19) and the at least one conductive finger (20a, 20b) is located in the second dispersion layer (16), and the current applied to the contact (19) is dispersed to the at least one conductive finger (20a, 20b) and through the second dispersion layer (16), Into the LED core (13). 5. If the LED of the patent application scope item 4, includes a first conductive finger 22), wherein the second contact (19) and at least one conductive finger (20a, 20b) form a substantially U-shaped conductive path, the first contact (21) and the first conductive finger (22) ) Forming a long conductive path in the U-shaped path. 6. If the LED of the patent application scope item 4 includes a plurality of the first and second conductive fingers (76, 75), the second contact (? 3) Close to one side of the LED, and the first contact (72) is close to the opposite side, the second conductive finger (75) forms a plurality of conductions from the second contact (73) toward the relatively off-edge Path, the first conductive finger (76) forms a plurality of conductive paths from the first contact (72) toward the finger-shaped second contact (73) between the second fingers (75). 7. For the LED in the fourth item of the patent application, wherein the second contact (111) is close to the center of the current dispersing layer (112), and the second conductive finger (113, 114) is from the second contact (111) A conductive path is formed toward the edge of the LED, and the first conductive finger (117) moves from the first contact (115) toward the finger between the second conductive finger (113, 114). The second contact (1U) forms a conductive path. -2- This paper size applies to China National Standard (CNS) A4 specification (210x297 mm) D8 6. Application for patent scope 8. For example, for application of LE D in the scope of patent application item 4, the second contact (91) is close to the The center of the current dispersion layer (92), and further includes 2 conductive branches (93) forming a conductive path in opposite directions from the contact (91) to the center line of the LED, and the second interpreting finger (94 ) Is approximately orthogonal to the branch (9 3), the first finger (97) from the first contact (95) and the edge of the LED toward the finger between the second finger (97) The branch (93) forms a conduction path. 9. For example, the LED in the patent application No. 4 includes a plurality of the first and second conductive fingers (84, 87), wherein the second finger (84) is from the second contact (81) A substantially parallel zigzag conduction path is formed, and the first finger (87) forms a substantially parallel zigzag conduction path from the fingers between the second zigzag finger (84) and the first contact (85). 10. A scalable light emitting diode (LED) mounted using a front and back chip and having an improved current dispersing structure, including: an LED core (130) having: a series of crystal growth p-type layers; a burst of crystal growth η An epitaxial growth activation layer between the P-type layer and the n-type layer; a first current dispersing layer (126) adjacent to the LED core (130); at least one slot reaching the first dispersion through the LED core Layer (126); a first contact (129) having at least one first conductive finger (131) on a first dispersing layer (126) in the at least one slot, and a current flowing from the first contact ( 129) flowing into the at least one first conductive finger (131), the first dispersion layer (126), and the LED core (130); -3- This paper size is applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 583774 A8 B8 C8 D8, patent application scope a second contact (124) is adjacent to the LED core (130) and opposite to the first dispersion layer (126); a conductive layer has 2 differences Part (127, 128), the first part (127 device) of the conductive layer is bonded to the second dispersion layer; a low layer (12 2) Adjacent to the first portion (127) of the conductive layer, and relative to the second dispersion layer (124), the second portion (128) of the conductive layer is also adjacent to the lower layer (122), and the LED is more Including a conductive material (125) between the second part (128) and the contact (129), a bias is applied to the first and second parts (127, 128) of the conductive layer to make the LED core (130) Glow. -4- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)