TWI224876B - Method for forming an LED device with a metallic substrate - Google Patents
Method for forming an LED device with a metallic substrate Download PDFInfo
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- TWI224876B TWI224876B TW92136609A TW92136609A TWI224876B TW I224876 B TWI224876 B TW I224876B TW 92136609 A TW92136609 A TW 92136609A TW 92136609 A TW92136609 A TW 92136609A TW I224876 B TWI224876 B TW I224876B
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1224876 五、發明說明(1) 發明所屬之技術領域: 本發明係有關於一種形成發光二極體方法,特別是有 關於一種形成具有金屬基板的發光二極體方法。 先前技術: 發光二極體的動作原理是將電流順向流入半導體的主 動層時便會發出光線。一般常見的發光二極體結構如第一 A圖所示。在第一 A圖中,發光二極體磊晶層1 1 0形成於基 板11 7之上,並在結構的上下各形成P接合點1 2 6及N接合點 1 1 8。而發光二極體磊晶層1 1 0包含N型半導體層1 1 2、主動 層1 1 4及P型半導體層1 1 6。而這樣結構的發光二極體的基 板1 1 7的材質為導電的材質,使電流1 3 0由P接合點1 2 6進 入,依序經過P型半導體層116、主動層114、N型半導體層 1 1 2及基板1 1 7,最後由N接合點11 8流出。當主動層1 1 4的 電流密度達到一臨界值,就會發出光線。而N型半導體層 1 1 2、主動層1 1 4及P型半導體層Π 6合稱為發光二極體磊晶 層 1 1 0。 上述的結構為垂直的結構,因此製程上相當簡單,且 僅具有單一的接合點,故在封裝製程上,打線 (Β ο n d i n g)較容易,良率較高。但由於基板的散熱效果 並不好。因此,發光二極體的操作溫度會較高,而造成發1224876 V. Description of the invention (1) Technical field to which the invention belongs: The present invention relates to a method for forming a light emitting diode, and more particularly to a method for forming a light emitting diode with a metal substrate. Prior art: The operating principle of a light-emitting diode is that light is emitted when a current is directed into the active layer of a semiconductor. The structure of a common light-emitting diode is shown in the first A diagram. In the first diagram A, a light emitting diode epitaxial layer 110 is formed on a substrate 11 and P junctions 1 2 6 and N junctions 1 1 8 are formed above and below the structure, respectively. The light emitting diode epitaxial layer 1 10 includes an N-type semiconductor layer 1 12, an active layer 1 1 4, and a P-type semiconductor layer 1 16. The material of the substrate 1 1 7 of the light-emitting diode having such a structure is a conductive material, so that the current 1 30 enters through the P junction 1 2 6 and sequentially passes through the P-type semiconductor layer 116, the active layer 114, and the N-type semiconductor. The layers 1 1 2 and the substrate 1 1 7 finally flow out from the N junction 11 8. When the current density of the active layer 1 1 4 reaches a critical value, light will be emitted. The N-type semiconductor layer 1 12, the active layer 1 1 4 and the P-type semiconductor layer Π 6 are collectively referred to as a light-emitting diode epitaxial layer 1 1 0. The above structure is a vertical structure, so the manufacturing process is quite simple, and only has a single joint. Therefore, in the packaging process, it is easier to wire (B ο n d i n g), and the yield is higher. However, the heat dissipation effect of the substrate is not good. Therefore, the operating temperature of the light-emitting diode will be higher, resulting in
1224876 五、發明說明(2) 光二極體使用壽命的縮短,並降低發光二極體的可靠度。 而且當發光二極體的操作溫度提升的同時,也會使發光效 率隨之下降。再者,高功率的發光二極體需較高的電流來 產生高亮度的發光,而高電流會帶來更高的熱量的產生。 因此,高功率發光二極體必須具有更好的散熱結構。而傳 統的這樣發光二極體的結構無法提供良好的散熱效果。 如第一 B圖所示為氮化鎵發光二極體,為另一種發光 二極體的結構。其基板的材質為藍寶石(s apph i r e),為 不導電的材質,因此不同於第一 A圖的基板為導電基板。 在第一 B圖中,於基板1 3 7之上依序成N型氮化鎵半導體層 132、主動層13 4及P型氮化鎵半導體層136。由於基板為不 導電的材質,故P接合點1 4 8及N接合點1 4 6均需形成於基板 的另一側,也就是需形成在同侧。因此,在氮化鎵磊晶層 1 4 0 (包含N型氮化鎵半導體層1 3 2、主動層1 3 4及P型氮化 鎵半導體層1 3 6)的部分區域進行蝕刻至暴露出部分的N型 氮化鎵半導體層的表面1 3 3,並在表面1 3 3上形成N電極 1 4 6。而由於P型氮化鎵半導體層1 3 6的導電性相當差,必 須形成一接觸層於P型氮化鎵半導體層1 3 6之上,以輔助電 流的擴散,又,為避免接觸層對發光二極體產生的光有遮 蔽的問題,故需為透明的導電材質。因此,在P型氮化鎵 半導體層1 3 6上需形成透明接觸層1 3 9,並在透明接觸層 1 3 9形成一開口 ,使P電極1 4 8形成於開口上,與P型氮化鎵 半導體層1 3 6接觸。1224876 V. Description of the invention (2) The service life of the light-emitting diode is shortened, and the reliability of the light-emitting diode is reduced. Moreover, as the operating temperature of the light-emitting diode increases, the light-emitting efficiency also decreases. In addition, high-power light-emitting diodes require higher currents to produce high-brightness light, and higher currents result in higher heat generation. Therefore, the high-power light-emitting diode must have a better heat dissipation structure. The traditional structure of such a light emitting diode cannot provide a good heat dissipation effect. As shown in Fig. 1B, the structure of the GaN light emitting diode is another type of light emitting diode. The material of the substrate is sapphire, which is a non-conductive material, so the substrate different from the first A picture is a conductive substrate. In the first B diagram, an N-type gallium nitride semiconductor layer 132, an active layer 134, and a P-type gallium nitride semiconductor layer 136 are sequentially formed on the substrate 1 37. Since the substrate is a non-conductive material, both the P junction 1 48 and the N junction 1 4 6 need to be formed on the other side of the substrate, that is, on the same side. Therefore, a part of the gallium nitride epitaxial layer 14 0 (including the N-type gallium nitride semiconductor layer 13 2, the active layer 1 34, and the P-type gallium nitride semiconductor layer 1 3 6) is etched to be exposed. A part of the N-type GaN semiconductor layer has a surface 1 3 3, and an N electrode 1 4 6 is formed on the surface 1 3 3. Since the conductivity of the P-type gallium nitride semiconductor layer 1 3 6 is rather poor, a contact layer must be formed on the P-type gallium nitride semiconductor layer 1 3 6 to assist the diffusion of current, and to avoid contact between the contact layer The light generated by the light emitting diode has a problem of shielding, so it needs to be a transparent conductive material. Therefore, a transparent contact layer 139 needs to be formed on the P-type gallium nitride semiconductor layer 136, and an opening is formed on the transparent contact layer 139, so that the P electrode 14.8 is formed on the opening and is in contact with the P-type nitrogen. The gallium semiconductor layer is in contact.
Hill 第8頁 1224876 五、發明說明(3) 上述另一種發光二極體的結構非完全垂直的結構’相 較於第一 A圖的結構,製程的步驟較為繁雜。而且這樣的 結構在正面有兩個接合點,造成封裝時製程較為複雜,良 率也會因此受到影響。再者,由於基板為不導電材質,其 散熱效果也較差’抗靜電(E S D)的能力也較差。 因此,傳統技術利用第一 A圖的發光二極體結構,進 一步於發光二極體磊晶層的基板相反側表面上形成一永久 基板,然後將原來的基板移除。如此,永久基板的材質可 以直接使用符合所需(例如導電性佳,散熱效果好)的材 質。但是,永久基板一般使用晶片接合(Wafer Β ο n d i n g)來與發光二極體蠢晶層接合。而晶片接合需要 在高溫、高壓的環境下執行,而且接合面的平坦度要求相 當的高。因此,造成晶片接合的技術難度相當高,良率也 相對地降低了。 發明内容: 鑒於上述之發明背景中,傳統方法所提供之形成發光 二極體的方法所產生之諸多問題與缺點,本發明主要之目 的在於提供一種形成具有金屬基板的發光二極體之方法, 利用形成一金屬永久基板於發光二極體上,以形成一個具 有良好散熱效果的發光二極體結構。Hill Page 8 1224876 V. Description of the invention (3) The above structure of another light-emitting diode is not completely vertical. Compared with the structure of the first figure A, the manufacturing steps are more complicated. Moreover, this structure has two joints on the front side, which makes the process of packaging more complicated, and the yield will be affected. In addition, since the substrate is made of a non-conductive material, its heat dissipation effect is also poor, and its antistatic (ESD) capability is also poor. Therefore, the conventional technology uses the light-emitting diode structure of the first A diagram to further form a permanent substrate on the opposite surface of the substrate of the light-emitting diode epitaxial layer, and then remove the original substrate. In this way, the material of the permanent substrate can be directly used as required (for example, good conductivity and good heat dissipation). However, the permanent substrate is generally bonded to the light-emitting diode stupid layer using wafer bonding (Wafer B n d i n g). The wafer bonding needs to be performed in a high temperature and high pressure environment, and the flatness of the bonding surface is required to be relatively high. Therefore, the technical difficulty of wafer bonding is relatively high, and the yield is relatively reduced. Summary of the Invention: In view of the above-mentioned background of the invention, the problems and disadvantages of the method for forming a light-emitting diode provided by a conventional method, the main purpose of the present invention is to provide a method for forming a light-emitting diode with a metal substrate. A metal permanent substrate is formed on the light emitting diode to form a light emitting diode structure with good heat dissipation effect.
第9頁 1224876 五、發明說明(4) 本發明之另一目的為提供形成具有金屬基板的發光二 極體之方法,利用形成一金屬永久基板於發光二極體上, 以形成一個具有良好抗靜電效果的發光二極體結構。 本發明之再一目的為提供形成具有金屬基板的發光二 極體之方法,由於發光二極體為垂直結構,且僅具有單一 導電墊(Single Pad),因此相較於傳統技術中接合點同 側的發光二極體結構,結構更簡單且容易形成。 本發明之又一目的為提供形成具有良好散熱效果的發 光二極體之方法,使發光二極體可操作於大電流,^發光 二極體的的亮度可有效提升。 本發明之更一目的為提供一形成發光二極體之方法, 以提升發光二極體之良率。 根據以上所述之目的,本發明提供了一種形成具有金 屬基板的發光二極體之方法,包含以下之步驟。首先,提 供一暫時基板,並依序形成一發光二極體磊晶層及一第一 電極層於暫時基板之上。然後,形成一金屬永久基板於第 一電極層^^ L。接著,移除暫時基板,使發光二極體蠢晶 層之一表面露出,並形成複數個第二電極於發光二極體蠢 晶層之上述表面上。最後,切割金屬永久基板、第一電極Page 9 1224876 V. Description of the invention (4) Another object of the present invention is to provide a method for forming a light-emitting diode with a metal substrate. A permanent metal substrate is formed on the light-emitting diode to form a light-resistant diode. Light-emitting diode structure with electrostatic effect. Another object of the present invention is to provide a method for forming a light-emitting diode with a metal substrate. Since the light-emitting diode has a vertical structure and has only a single conductive pad, the junction point is the same as that in the conventional technology. The light emitting diode structure on the side is simpler and easier to form. Another object of the present invention is to provide a method for forming a light emitting diode with good heat dissipation effect, so that the light emitting diode can be operated at a large current, and the brightness of the light emitting diode can be effectively improved. A further object of the present invention is to provide a method for forming a light emitting diode to improve the yield of the light emitting diode. According to the above-mentioned object, the present invention provides a method for forming a light-emitting diode having a metal substrate, including the following steps. First, a temporary substrate is provided, and a light emitting diode epitaxial layer and a first electrode layer are sequentially formed on the temporary substrate. Then, a metal permanent substrate is formed on the first electrode layer ^^ L. Next, the temporary substrate is removed, one surface of the light emitting diode stupid layer is exposed, and a plurality of second electrodes are formed on the surface of the light emitting diode stupid layer. Finally, the metal permanent substrate and the first electrode are cut.
第10頁 Ϊ224876 五、發明說明(5) 層及發光二極體蟲晶層,以形成複數個發光二極體 光二極_ 板,並形 蝕刻發光 二極體磊 數個發光 滿複數個 久基板, 及介電層 晶粒之表 極於各自 最後,士刀 本發明也提供了 一種形成具有金屬美 之方法,包含以下之步驟。首先, 土板的毛 成-發光二極體蟲晶層於暫時基板之丄:::基Page 10Ϊ224876 V. Description of the invention (5) layer and light-emitting diode worm crystal layer to form a plurality of light-emitting diode photodiodes_plates, and shape-etch the light-emitting diodes and emit a plurality of light-emitting substrates And the grains of the dielectric layer are at the end of each other. The present invention also provides a method for forming metal beauty, including the following steps. First, the hairy-light-emitting diode worm crystal layer of the soil plate is attached to the temporary substrate :::
晶粒,並形成複數個第—電極層m = i 一極體磊晶粒之上。接下來, # 4的I 發光二極體蠢晶粒間空隙。然後二2層以填 使金屬永久基板覆蓋於複數個發光 3: 面露出:再來,移除介電層及形成複㈡:: 對應的複數個發光二極體蟲s朽 ^ n ^ m ^ ^ 4, 版猫日日叔之上述表面上。 d至屬水久基板,以形成複數個發光二極體。 之方:發形成具有金屬基板的發光二極 、 乂 ‘。首先,提供一暫日矣其4 、, 成一發光二極體磊晶層於暫時基板 =,並 光二極體蠢晶層至該暫時基板為止, =了=,蝕刻 極體磊晶粒。然後,形成複數 =形成禝數個發光 該複數個發光二極體磊s粒 电極層於各自對應 収日日租I上, ^ 以填滿複數個發光二極體磊晶粒形^ γ弟一介電 電促進層以覆蓋複數個第 :=U ’形成〜 後’形成一第二介電芦在導及弟一介電層之上。 电層在V电促進層,對應於 1224876 五、發明說明(6) 垂直方向之區域上,並形成一金屬永久基板於導電促進層 之上,以填滿第二介電層間之空隙。接著,移除該暫時基 板,使該複數個發光二極體磊晶粒之表面露出。再來,移 除第一介電層,並形成複數個第二電極於各自對應的該複 數個發光二極體磊晶粒之上述表面上。I最後移除第二介電 層,以及切割導電促進層以形成複數個發光二極體。 實施方法:Grains and form a plurality of first electrode layers m = i-on the pole body grains. Next, # 4 of the I light emitting diode is stupid. Then two or two layers are filled so that the metal permanent substrate is covered with the plurality of light-emitting 3: surface is exposed: again, the dielectric layer is removed and a complex is formed :: the corresponding plurality of light-emitting diode worms are decaying ^ n ^ m ^ ^ 4, Edition Cat Uncle's above surface. d is a water-based substrate to form a plurality of light-emitting diodes. Way: hair light emitting diode with metal substrate, 乂 ′. First, a temporary diode layer is provided to form a light-emitting diode epitaxial layer on the temporary substrate, and a photodiode stupid layer is formed on the temporary substrate, and the polarizer grains are etched. Then, a plurality of light-emitting diode electrodes are formed on each of the corresponding day-to-day rental rates I to form a plurality of light-emitting diode electrodes ^ to fill the plurality of light-emitting diode crystal grain shapes ^ γ A dielectric promoting layer covers a plurality of first layers: = U 'formed ~ after' to form a second dielectric layer on top of the conductive layer and the first dielectric layer. The electric layer is on the V electric promotion layer, corresponding to 1224876 V. Description of the Invention (6) A vertical direction area, and a metal permanent substrate is formed on the conductive promotion layer to fill the gap between the second dielectric layers. Then, the temporary substrate is removed to expose the surfaces of the plurality of light emitting diode crystal grains. Then, the first dielectric layer is removed, and a plurality of second electrodes are formed on the corresponding surfaces of the plurality of light emitting diode epitaxial grains. Finally, the second dielectric layer is removed, and the conductive promoting layer is cut to form a plurality of light emitting diodes. method of execution:
本發明的一些實施例會詳細描述如下。然而,除了詳 細描述的實施例外,本發明還可以廣泛地在其它的實施例 中施行,且本發明的範圍不受限定,其以之後的申請專利 範圍為^準。 再者,為提供更清楚的描述及更易理解本發明,圖示 内各部分並沒有依照其相對尺寸繪圖,某些尺寸與其他相 關尺度相比已經被誇張;不相關之細節部分也未完全繪 出,以求圖示的簡潔。Some embodiments of the present invention will be described in detail as follows. However, with the exception of the embodiments described in detail, the present invention can also be widely implemented in other embodiments, and the scope of the present invention is not limited, which is subject to the scope of subsequent patent applications. Furthermore, in order to provide a clearer description and easier understanding of the present invention, the parts in the diagram are not drawn according to their relative dimensions, and certain dimensions have been exaggerated compared to other related dimensions; irrelevant details have not been completely drawn. Out for simplicity of illustration.
本發明之精神為形成一金屬永久基板,並移出發光二 極體磊晶時所用的基板。而金屬基板除了有助於移除發光 二極體操作時所產生的熱量,以增加發光二極體的散熱效 i果外。而且由於形成的永久基板的材質為金屬,可提供一 個相當良好的抗靜電效果。再者,由於本發明的發光二極 1224876 五、發明說明(7) 體為垂直結構,且僅有單一的導電墊,因此構造相當簡 單、易於形成,故可提高發光二極體的生產良率。 另外,本發明的形成方法也可選擇將發光二極體的部 分結構層先行形成預切槽溝,使發光二極體在磊晶層剝離 時及最後各自切割分離成單獨的發光二極體晶粒時所需切 割的厚度降低,使發光二極體更易於切割分離。The spirit of the present invention is to form a permanent metal substrate and remove the substrate used for epitaxial light-emitting diodes. In addition to the metal substrate, it helps to remove the heat generated during the operation of the light-emitting diode, so as to increase the heat dissipation effect of the light-emitting diode. And because the material of the formed permanent substrate is metal, it can provide a fairly good antistatic effect. Furthermore, since the light-emitting diode 1224876 of the present invention has a vertical structure and only a single conductive pad, the structure is relatively simple and easy to form, so the production yield of the light-emitting diode can be improved. . In addition, in the forming method of the present invention, a part of the structure layer of the light-emitting diode may be selected to form a pre-cut groove in advance, so that the light-emitting diode is cut into separate light-emitting diode crystals when the epitaxial layer is peeled off and finally cut. The thickness required for cutting is reduced, making the light-emitting diode easier to cut and separate.
本發明以氮化鎵發光二極體(GaN-based LED)蠢晶 結構成長於藍寶石暫時基板之上為例。而本發明的金屬永 久基板可以電鍍、金屬冷成形(Metal Cold-Forming)、 蒸鍍或濺鍍方式來完成,下述本發明的實施例以電鍍方式 來說明本發明,並非用以限制本發明形成金屬永久基板之 形成方法。 第二A圖到第二G圖係為本發明之一較佳實施例的形成 發光二極體流程之示意圖。In the present invention, a gallium nitride light emitting diode (GaN-based LED) stupid crystal structure is grown on a sapphire temporary substrate as an example. The metal permanent substrate of the present invention can be completed by electroplating, metal cold-forming, evaporation or sputtering. The following embodiments of the present invention illustrate the present invention by electroplating, but are not intended to limit the present invention. A method for forming a metal permanent substrate. The second diagram A to the second G diagram are schematic diagrams of a process for forming a light emitting diode according to a preferred embodiment of the present invention.
首先,如第二A圖所示,形成一發光二極體磊晶層1 2 於暫時基板1 0之上。發光二極體磊晶層1 2依序包含一 N型 半導體層、一主動層及一 P型半導體層。然後,如第二B圖 所示,形成一第一電極層1 4於發光二極體磊晶層1 2之上。 第一電極層1 4可與發光二極體磊晶層1 2形成良好的歐姆接 觸,降低接觸阻抗並使電流能有效地擴散到整個發光二極First, as shown in FIG. 2A, a light-emitting diode epitaxial layer 12 is formed on the temporary substrate 10. The light-emitting diode epitaxial layer 12 includes an N-type semiconductor layer, an active layer, and a P-type semiconductor layer in this order. Then, as shown in FIG. 2B, a first electrode layer 14 is formed on the light emitting diode epitaxial layer 12. The first electrode layer 14 can form a good ohmic contact with the light emitting diode epitaxial layer 12 to reduce the contact resistance and allow the current to be effectively diffused to the entire light emitting diode.
第13頁 1224876 五、發明說明(8) 體。第一電極層1 4的較佳材質為氧化鎳及金。接著,於第 一電極層1 4之上形成導電促進層1 6,如第二C圖所示。導 電促進層1 6主要作用為輔助金屬永久層2 0的形成。例如: 導電促進層1 6於電鍍時作為後續電鍍時的電鍍種晶導電 層,以促進金屬永久層2 0的形成。如上述,本發明也可以 以電鍍以外的方式來形成金屬永久層20,因此,導電促進 層1 6的形成是一個可選擇的製程步驟。Page 13 1224876 V. Description of the invention (8). Preferred materials of the first electrode layer 14 are nickel oxide and gold. Next, a conductive promoting layer 16 is formed on the first electrode layer 14 as shown in the second C diagram. The conductivity promotion layer 16 mainly plays a role in assisting the formation of the permanent metal layer 20. For example: The conductive promotion layer 16 is used as a plating seed conductive layer in the subsequent plating during electroplating to promote the formation of the permanent metal layer 20. As described above, the present invention can also form the permanent metal layer 20 in a manner other than electroplating. Therefore, the formation of the conductive acceleration layer 16 is an optional process step.
再來,形成金屬永久基板2 0於導電促進層1 6之上,如 第二D圖所示。金屬永久基板2 0的材質可視所欲形成的發 光二極體所需來選擇,較佳的材質有銀、鎳、鈦、鉻、 翻、把、鋅、銘、銦、錫、銅、金、錮、锰,或者上述金 屬的合金或多層結構。不同的金屬有適合的形成方式。例 如:金、翻、絡、纪、銘、鋅、鎳、鈦、鉬、锰及其合金 等適合以蒸鍍或濺鍍方式形成;鎳、鉻、鋅、銀、錫、 銅、金、銀 '鉬及錳適合以電鍍方式;而鈀、銦、錫或其 合金適合以金屬冷成形方式形成。而金屬永久基板2 0較佳 的厚度範圍為1 0微米到3 0 0微米,尤其以4 0到1 5 0微米更 佳0Then, a metal permanent substrate 20 is formed on the conductive promoting layer 16 as shown in the second D diagram. The material of the metal permanent substrate 20 can be selected according to the needs of the light-emitting diodes to be formed. The preferred materials are silver, nickel, titanium, chromium, flip, handle, zinc, Ming, indium, tin, copper, gold, Hafnium, manganese, or an alloy or multilayer structure of the above metals. Different metals have suitable formation methods. For example: gold, flip, metal, metal, zinc, nickel, titanium, molybdenum, manganese and their alloys are suitable for formation by evaporation or sputtering; nickel, chromium, zinc, silver, tin, copper, gold, silver 'Molybdenum and manganese are suitable for electroplating; and palladium, indium, tin or their alloys are suitable for forming by metal cold forming. The metal permanent substrate 20 preferably has a thickness ranging from 10 micrometers to 300 micrometers, and more preferably 40 to 150 micrometers.
接下來,移除暫時基板1 〇,如第二E圖所示。而移除 暫時基板1 0的方法可以是選擇性钱刻(S e 1 e c t i v e 1 y Etching)、研磨 / 拋光(Lapping/ Polishing)、晶片 掀離(Wafer Lift-Off )或其組合方式。移除暫時基板10Next, the temporary substrate 10 is removed, as shown in the second E diagram. The method for removing the temporary substrate 10 may be selective money engraving (S e 1 e c t i v e 1 y Etching), lapping / polishing (Lapping / Polishing), wafer lift-off (Wafer Lift-Off) or a combination thereof. Remove temporary substrate 10
第14頁 ^4876 五、發明說明(9) —— 12原先與暫時基板1 0連接的 表面 斤灸 , ’發光二極體磊晶層 f露出。 如第二F圖所示,將菸出—λ ^ 光二極體磊晶層1 2之裸霖&夺一脰結構翻轉,使上述發 开;成複數個第二電極22。1::亡:f f於裸露表面之上 Z成的發光二極體。最後 T ^亟_22對應到—個欲 線⑼切割上述發光:極體;^艾圖所-,沿著切割虛 電促進層16、_ 一電極含金屬水久基板20、導 形成複數個發光二極體。 *光一極體磊晶層1 2),以 弟三A圖到第三j圖係為本 成發光二極㉟汽裎之干音=本,明之另較佳貫施例的形 示的實施例Γ第三1圖/繁τ ί第二A圖到第二G圖所 與發光二極體石曰/丨2的接貫施例,其暫時基板1丨 挪日日層1 2的接觸面部分改成與介電層]8垃 宝]护1二日守基板移除1 〇較為容易,而且進行發光二極體切 口J可僅兩切割較少的層數,較容易切割。 足 如第三A圖到第三B圖所示,先形成一發光二極-石曰 層1+2於暫時基板丨〇之上,然後钱刻發光二極體蠢晶‘ 7‘ 暫^基板1 0為止,以形成發光二極體磊晶粒1 2 A。接著, 2第三C圖所示,於每個發光二極體磊晶粒1 2A各自形 y電=層14A。第一電極層14A的較佳材質為氧化鎳及金乐 可與發光二極體磊晶粒1 2A形成良好的歐姆接觸,而降低 1224876 五、發明說明(10) '— 接合阻抗。上述蝕刻發光二極體磊晶層丨2及形成第_電極 層1 4 A兩步驟的順序是可以互換而不影響本發明發光二極° 體之形成。 ° 然後,於各個發光二極體磊晶粒1 2 A間的間隙中填入 介電層1 8至約略與發光二極體磊晶粒1 2A同高;隨後了 形成導電促進層1 6於第一電極層1 4 A及介電層1 8之上,如 第三D圖到第二E圖所示。同樣的,本發明也可以以電鍍或 其他以外的方式來形成金屬永久層2 0,因此,導電促進居 1 6的形成是一個可選擇的製程步驟。而介電層丨8的較佳^ 質有二氧化矽、氮化矽、旋塗玻璃(SOG)、光阻或高分 子。而高分子可以是樹脂(A BS r e s i η)、環氧樹脂 (Epoxy)、壓克力樹脂(ΡΜΜΑ)、丙稀晴丁稀苯乙烯共 聚合物(aery 1 on i t i r 1 e butadiene styrene copolymer)、聚甲基丙烯酸甲脂(polymethyl methacrylate),或是I 風物(p〇iysuifones)、聚醚醯 亞胺(polyetherimides)、聚醯亞胺(polyimides)、 聚醚風物(poly the rsu If ones)、聚醯胺醯亞胺 (p〇 1 y am i de i m i de)、聚曱苯石荒 4 匕物(polyphenylene s u 1 f i d e)等熱塑性聚合物。 再來,形成一金屬永久基板2 0於導電促進層1 6之上, 如第三F圖所示。金屬永久基板2 0的材質可視所欲形成的 發光二極體所需來選擇,較佳的材質有銀、鎳、鈦、鉻、Page 14 ^ 4876 V. Description of the invention (9) ——12 The surface that was originally connected to the temporary substrate 10 is moxibustion, and the light emitting diode epitaxial layer f is exposed. As shown in the second F diagram, the naked-amplifier structure of the smoke-λ ^ photodiode epitaxial layer 12 is reversed to make the above hair open; a plurality of second electrodes 22: 1: : Ff is a light emitting diode formed by Z on the bare surface. In the end T ^ _22 corresponds to a luminous line cutting the above-mentioned luminescence: polar body; ^ Aituo-, cutting along the virtual electricity promotion layer 16, _ an electrode containing metal water substrate 20, and a plurality of luminescence is formed. Diode. * Light monopole epitaxial layer 1 2), based on the pictures of the third three A to the third j, the dry sound of the light-emitting diode ㉟ steam 裎 = this, the other embodiment of the preferred embodiment ΓThird Figure 1 / 繁 τ ί The second and second figures from G to G are connected to the light-emitting diode stone / 丨 2, which is a temporary substrate 1 丨 Norichi layer 12 contact surface part It is easier to remove the dielectric layer with a dielectric layer [8]. It is easier to remove the substrate, and the light-emitting diode incision J can be cut with only two fewer layers, which is easier to cut. As shown in Figures 3A to 3B, a light-emitting diode-stone layer 1 + 2 is formed on the temporary substrate 丨 0, and then a light-emitting diode stupid '7' temporary substrate is formed by money. Up to 10, to form a light-emitting diode epitaxial grain 1 2 A. Next, as shown in FIG. 3 and FIG. 3C, each of the light-emitting diode epitaxial grains 12A has a shape of y and a layer 14A. The preferred material of the first electrode layer 14A is nickel oxide and Jinle, which can form a good ohmic contact with the light-emitting diode epitaxial grains 12A, thereby reducing the 1224876. V. Description of the invention (10) '—Joint impedance. The order of the above two steps of etching the light emitting diode epitaxial layer 2 and forming the _ electrode layer 1 4 A can be interchanged without affecting the formation of the light emitting diode of the present invention. ° Then, a dielectric layer 18 is filled in the gap between the light-emitting diode epitaxial grains 1 2 A to approximately the same height as the light-emitting diode epitaxial grains 12 2A; subsequently, a conductive promotion layer 16 is formed. Above the first electrode layer 14 A and the dielectric layer 18, as shown in the third D to second E diagrams. Similarly, the present invention can also form the permanent metal layer 20 by electroplating or other methods. Therefore, the formation of conductive promotion layer 16 is an optional process step. The preferred properties of the dielectric layer 8 include silicon dioxide, silicon nitride, spin-on-glass (SOG), photoresist, or high molecular weight. The polymer can be resin (A BS resi η), epoxy resin (Epoxy), acrylic resin (PMMA), acrylonitrile butadiene styrene copolymer (aery 1 on itir 1 e butadiene styrene copolymer), Polymethyl methacrylate, or poiysuifones, polyetherimides, polyimides, poly the rsu If ones, poly Thermoplastic polymers such as amines and imines, polyphenylene su 1 fide, and the like. Then, a metal permanent substrate 20 is formed on the conductive promoting layer 16 as shown in FIG. 3F. The material of the metal permanent substrate 20 can be selected according to the light-emitting diodes to be formed. The preferred materials are silver, nickel, titanium, chromium,
第16頁 A224876 五、發明說明(11) 翻、& 紀、鋅、紹、銦、錫、銅、金、鉬、I孟,或者上述金 屬的合金或多層結構。如上所述,不同的金屬有適合的形 成方式,例如有蒸鍍、濺鍍、電鍍或金屬冷成形方式。 接下來’移除暫時基板1 0 ’如第4 G圖所示。而移除 暫時基板1 0的方法可以是選擇性蝕刻(s e 1 e c t i v e 1 y Etching)、研磨 / 拋光(Lapping/ p〇Hshing)、晶片 掀離(W a f e r L i f t - 0 f f )或其組合方式。移除暫時基板^ 〇 後,發光二極體磊晶粒1 2 A原先與暫時基板丨q連接 面會露出。 、一表 如第三Η圖及第三I圖所示,將發光二極體姓 、、,Ό不霉染;jjj击金 使上述發光一極體蠢晶粒1 2 A之裸露表面朝上,然# 、τ 個發光二極體蠢晶粒1 2 A之裸露表面上形成第二恭、各 矛夕除各個發光一極體蠢晶粒1 2 A間的介電層18。而L 2 2並 電層1 8與形成第二電極22這兩個步驟其順序是 移除介 影響的。最後,如第三j圖所示,沿著切 換而不 =發光二極f结構(包含金屬永久基板20及導電^割上 1 6),以形成複數個發光二極體。 ,私促進層 士又第四A圖到第四L圖係為本發明之又一較卢杂 成务光二極體流程之示意圖。 汽知例的形 發光二極體切割時所需切1m ”個實施例, ^居度更潯,故更容易切割。Page 16 A224876 V. Description of the invention (11) Turn, & Ji, zinc, Shao, indium, tin, copper, gold, molybdenum, Iman, or alloy or multilayer structure of the above metals. As mentioned above, different metals have suitable formation methods, such as evaporation, sputtering, electroplating, or metal cold forming. Next, 'remove the temporary substrate 10', as shown in FIG. 4G. The method for removing the temporary substrate 10 can be selective etching (se 1 ective 1 y Etching), grinding / polishing (Lapping / pohshing), wafer lift-off (W afer L ift-0 ff), or a combination thereof. . After the temporary substrate ^ is removed, the light-emitting diode epitaxial die 1 2 A originally exposed to the temporary substrate 丨 q will be exposed. A table, as shown in the third figure and the third figure I, the light-emitting diode surname ,,, and Ό are not stained; jjj hit gold so that the bare surface of the above light-emitting polar stupid grains 1 2 A faces upward Then, a second dielectric layer 18 is formed on the exposed surface of the #, τ light-emitting diode stupid grains 1 2 A, and each light-emitting pole stupid grains 12 A is formed. The order of the two steps of the L 2 2 parallel layer 18 and the formation of the second electrode 22 is the effect of removing the dielectric. Finally, as shown in the third figure, the structure of the light emitting diode f (including the permanent metal substrate 20 and the conductive substrate 16) is switched along to switch to form a plurality of light emitting diodes. Figures 4A to 4L are diagrams of the process of a more complex photodiode of the present invention. The shape of the known example requires 1m of the light-emitting diodes to be cut. The embodiment has a larger population and is easier to cut.
1224876 五、發明說明(12) 如第四A圖到第四C圖所示,先形成一發光二極體蠢晶 層1 2於暫時基板1 0之上,然後蝕刻發光二極體磊晶層1 2蝕 刻至暫時基板1 0為止,以形成發光二極體磊晶粒1 2 A。接 著,於每個發光二極體磊晶粒1 2 A各自形成第一電極層 1 4A。第一電極層1 4A的較佳材質為氧化鎳及金,可與發光 二極體磊晶粒1 2 A形成良好的歐姆接觸,而降低接合阻 抗。上述钱刻發光二極體蠢晶層1 2及形成第一電極層14A 兩步驟的順序是可以互換而不影響本發明發光二極體之形 成。 然後,於各個發光二極體磊晶粒1 2 A間的間隙中填入 第一介電層1 8至約略與發光二極體磊晶粒1 2 A同高;隨 後,再形成導電促進層1 6於第一電極層1 4 A及第一介電層 1 8之上,如第四D圖到第四E圖所示。同樣的,本發明也可 以以電鍍或其他以外的方式來形成金屬永久層2 0。 再來,如第四F圖所示,形成第二介電層2 4於導電促 進層1 6之上。第二介電層2 4的位置對應於第一介電層1 8的 位置。一般,第二介電層2 4的厚度應與金屬永久基板2 0厚 度相當。第二介電層2 4較佳的厚度範圍為1 0微米到3 0 0微 米,尤其以4 0微米到1 5 0微米更佳。 而第一介電層1 8及第二介電層2 4的較佳材質有二氧化 石夕、氮化石夕、旋塗玻璃、光阻或高分子。而高分子可以是1224876 V. Description of the invention (12) As shown in Figures 4A to 4C, a light emitting diode stupid layer 12 is formed on the temporary substrate 10, and then the light emitting diode epitaxial layer is etched. 12 is etched until the temporary substrate 10 is formed, so as to form light-emitting diode epitaxial grains 12 A. Next, a first electrode layer 14A is formed on each of the light-emitting diode epitaxial grains 12A. The preferred material of the first electrode layer 14A is nickel oxide and gold, which can form a good ohmic contact with the light-emitting diode epitaxial grains 1 2 A, thereby reducing the joint resistance. The order of the two steps of the money-engraved light-emitting diode stupid crystal layer 12 and forming the first electrode layer 14A can be interchanged without affecting the formation of the light-emitting diode of the present invention. Then, the first dielectric layer 18 is filled into the gap between the light-emitting diode epitaxial grains 1 2 A to approximately the same height as the light-emitting diode epitaxial grains 1 2 A; subsequently, a conductive promotion layer is formed. 16 is on the first electrode layer 14 A and the first dielectric layer 18, as shown in the fourth D to fourth E diagrams. Similarly, the present invention can also form the permanent metal layer 20 by electroplating or other methods. Further, as shown in the fourth F diagram, a second dielectric layer 24 is formed on the conductive promoting layer 16. The position of the second dielectric layer 24 corresponds to the position of the first dielectric layer 18. Generally, the thickness of the second dielectric layer 24 should be equivalent to the thickness of the metal permanent substrate 20. The thickness of the second dielectric layer 24 is preferably in the range of 10 micrometers to 300 micrometers, and more preferably in the range of 40 micrometers to 150 micrometers. The preferred materials for the first dielectric layer 18 and the second dielectric layer 24 are silica, nitride, spin-coated glass, photoresist, or polymer. And the polymer can be
第18頁 1224876 五、發明說明(13) 樹脂(A B S r e s i η)、環氧樹脂(Ε ρ ο X y)、壓克力樹脂 (PMMA)、丙稀晴丁稀苯乙烯共聚合物(acrylonitirle butadiene styrene copolymer)、聚甲基丙烯酸曱月旨 (polymethyl methacrylate),或是聚風物 (polysulfones)、聚醚酸亞胺(polyetherimides)、 聚酿亞胺(polyimides)、聚趟風物 (P〇 1 ythersu 1 fones) 、?畏醯胺醯亞胺 (polyamideimide)、聚曱苯硫化物(p〇iyphenylene s u 1 f i d e)等熱塑性聚合物。 間永擇銦構鍍 圖 -; 第G極ιε 滿四二、 填第光鉑 以如發、 2 ,的鉻 板高成、 基同形鈦 4 久2欲、 永層所鎳 屬電視、 金介可銀 一 二質有 成第、材質 形與g材 ,略2的 著約板佳 接至基較 隙久, 電 介 示 所 需 、 所辞 體、 的 4 屬 2 選、 金 、 層、來鋁 結蒸 層有 多如 或例 金, 合式 的方 屬成 金形 述的。 上合式 者適方 或有形 ,屬成 猛金冷 、的屬 翻同金 、不或 金,鍍 、述電 銅所、 、上鍍 錫如濺 接下來,移除暫時基板1 Ο,如第四Η圖所示。而 暫牯基板1 0的方法可以是選擇性蝕刻(s e丨e c t丨ν㊀丄y Etching)、研磨 / 拋光(Lapping/ p〇Hshing) 掀離(Wafer Lift-Off)。移除暫時基板1〇後,發光二日日 磊晶粒1 2 A原先與暫時基板1 〇連接的一表面會露出。Page 18 1224876 V. Description of the invention (13) Resin (ABS resi η), epoxy resin (E ρ ο X y), acrylic resin (PMMA), acrylic copolymer (acrylonitirle butadiene) styrene copolymer), polymethyl methacrylate, or polysulfones, polyetherimides, polyimides, polyamide (P〇1 ythersu 1 fones),? Thermoplastic polymers such as polyamideimide and polyimide sulfide (poiphenylene s u 1 f i d e). Wing-cho ’s indium structure plating pattern; G-pole ιε full 42, filled with photo-platinum such as hair, 2, chrome plate high-formation, base isomorphous titanium 4 long-time 2 w, Wing layer nickel TV, gold But silver has two grades, material shape and g material, slightly 2 books about the plate is connected to the base for a long time, the dielectric display required, the words, the 4 genus 2 election, gold, layer, come There are as many or assorted gold layers in the aluminum junction vaporized layer, and the combined formula is described as gold. The top-fitting type is suitable or tangible, belongs to fierce gold, belongs to the same gold, non-or gold, plating, electroplating copper, and tin plating, such as splashing. Next, remove the temporary substrate 10, such as the fourth ΗFigure. The method of temporarily removing the substrate 10 may be selective etching (s e 丨 e c t 丨 ν㊀ 丄 y Etching), lapping / polishing (Lapping / poshing), and lift-off (Wafer Lift-Off). After the temporary substrate 10 is removed, the surface that was originally connected to the temporary substrate 10 on the second day after the light emitting diode 1 2A is exposed.
第19頁 12248761224876Page 19
五 、發明說明 (14) 如 第 四 I圖及第四 J圖 所示,將發光二極體 結構翻轉, 使 上 述 發 光 "—' 極 體 磊 晶 粒 1 2 A之裸露表面朝上 ,然後於各 個 發 光 二 極 體 晶 粒 1 ‘ 2 Α之裸露表面上形成第- 二電極22並 移 除 各 個 發 光 二 極 體 蟲 晶 粒1 2 A間的第一介電層1 8。同樣 的 移 除 第 一 介 電 層 1ί 慎 形成第二電極2 2這兩 個步驟其順 序 可 互 換 而 不 影 響 的 〇 最 後 移 除 第 _—— 介 電 層2 4,並沿著切割虛 線3 0切割上 述 發 光 二 極 體 結 構 ( 即 導電促進層16),如 第四K圖到 第 四 L圖所i F ,以形成複數個發光二極體。由於導電促進 層 1 6不 厚 容 易 斷 裂 因 此僅要施加一輕微的 力即可使發 光 二 極 體 各 白 分 離 〇 - 另 外 在 本 發 明 中 發光二極體的磊晶層 中的N型半 導 體 層 12會 與 第 二 電 極 2 2接觸,也就是發光二 極體蠢晶層 之 裸 露 表 面 係 為 發 光 --- 極 體磊晶層1 2之N型半導體層表 面 〇 而 由 於 本 發 明 的 Ν型半導體層的電流擴散效果良好, 因 此 可 不 需 於 N型半導體層會與第二電極2 2間形成一電流 擴 散 層 〇 當 本 發 明 也 可選擇性形成電流擴 散層於N型 半 導 體 層 與 第 二 電 極 2 2間 ,以幫助電流更能擴 散至發光二 極 體 的 各 個 部 分 以 提 發光二極體的整體發 光效率。 本 發 明 形 成 一 金 屬 永 久基板於發光二極體 的結構上, 利 用 金 屬 的 良 好 散 埶 Φ 性 可以使發光二極體於 操作時所產 第20頁 1224876 五、發明說明(15) 生的熱量可迅速地帶走,以降低發光二極體操作的溫度。 並且,由於金屬的良好的散熱效果,也可以使發光二極體 可承受的電流值可有效提升。 再者,由於永久基板的材質為金屬,故可以作為製程 中抗靜電的保護層,以避免發光二極體受到製程中所產生 的靜電的侵害。本發明所形成的發光二極體結構為垂直結 構,且僅具有單一導電墊(Single Pad),因此結構相當 的簡單且容易形成,故可提升發光二極體之良率。V. Description of the invention (14) As shown in Figures I and J, the structure of the light-emitting diode is reversed so that the exposed surface of the above-mentioned light-emitting diode 1 2 A faces upward, and A second electrode 22 is formed on the exposed surface of each of the light-emitting diode crystal grains 1 ′ 2 A and the first dielectric layer 18 between each of the light-emitting diode crystal grains 1 2 A is removed. Similarly, the first dielectric layer 1 is removed. The two steps of carefully forming the second electrode 2 2 are interchangeable in order. The last step is to remove the second dielectric layer 2 4 and cut the dotted line 3 0. The above-mentioned light emitting diode structure (ie, the conductive promoting layer 16) is cut, such as i F in the fourth K-picture to the fourth L-picture, to form a plurality of light-emitting diodes. Since the conductive promoting layer 16 is not thick and easy to break, only a slight force can be applied to separate the white of the light-emitting diode. In addition, the N-type semiconductor layer 12 in the epitaxial layer of the light-emitting diode in the present invention Will be in contact with the second electrode 22, that is, the exposed surface of the light emitting diode stupid layer is light emitting --- the surface of the N-type semiconductor layer of the polar epitaxial layer 12 and the N-type semiconductor layer of the present invention The current diffusion effect is good, so it is not necessary to form a current diffusion layer between the N-type semiconductor layer and the second electrode 22. When the present invention can also selectively form a current diffusion layer between the N-type semiconductor layer and the second electrode 22 In order to help the current to diffuse to various parts of the light-emitting diode, the overall light-emitting efficiency of the light-emitting diode is improved. The invention forms a metal permanent substrate on the structure of the light-emitting diode. The good dispersion of the metal can be used to produce the light-emitting diode during operation. Page 20 1224876 V. Description of the invention (15) Take it away quickly to reduce the temperature at which the light-emitting diode operates. In addition, due to the good heat dissipation effect of the metal, the current value that the light emitting diode can withstand can be effectively improved. Furthermore, since the material of the permanent substrate is metal, it can be used as an antistatic protective layer in the manufacturing process to prevent the light emitting diode from being damaged by the static electricity generated during the manufacturing process. The light-emitting diode structure formed by the present invention is a vertical structure and has only a single conductive pad (Single Pad). Therefore, the structure is relatively simple and easy to form, so the yield of the light-emitting diode can be improved.
對熟悉此領域技藝者,本發明雖以一較佳實例闡明如 上,然其並非用以限定本發明精神。在不脫離本發明之精 神與範圍内所作之修改與類似的安排,均應包含在下述之 申請專利範圍内,這樣的範圍應該與覆蓋在所有修改與類 似結構的最寬廣的詮釋一致。因此,闡明如上的本發明一 較佳實例,可用來鑑別不脫離本發明之精神與範圍内所作 之各種改變。 1224876 圖式簡單說明 圖式簡單說明: 第一 A圖到第一 B圖係為傳統技術中發光二極體之結構 不意圖, 第二A圖到第二G圖係為本發明之一較佳實施例的形成 發光二極體之流程示意圖;For those skilled in the art, although the present invention is explained above with a preferred example, it is not intended to limit the spirit of the present invention. Modifications and similar arrangements made without departing from the spirit and scope of the present invention should be included in the scope of patent applications described below, and such scope should be consistent with the broadest interpretation covering all modifications and similar structures. Therefore, a preferred embodiment of the present invention as explained above can be used to identify various changes made without departing from the spirit and scope of the present invention. 1224876 Schematic illustrations Schematic illustrations: The first diagram A to the first diagram B are the structures of the light-emitting diodes in the conventional technology. The second diagram A to the second diagram G are one of the preferred embodiments of the present invention. A schematic flow chart of forming a light emitting diode according to the embodiment;
第三A圖到第三J圖係為本發明之另一較佳實施例的形 成發光二極體之流程示意圖;以及 第四A圖到第四L圖係為本發明之又一較佳實施例的形 成發光二極體之流程示意圖。 圖示符號對照表: 1 0暫時基板 1 2、1 2 A發光二極體磊晶層 14、 14A第一電極層Figures A through J are diagrams illustrating the process of forming a light emitting diode according to another preferred embodiment of the present invention; and Figures A through L are the other preferred embodiments of the present invention. The schematic flow chart of the example of forming a light emitting diode. Graphic symbol comparison table: 1 0 temporary substrate 1 2, 1 2 A light emitting diode epitaxial layer 14, 14A first electrode layer
1 6導電促進層 18介電層 2 0金屬永久層 2 2第二電極 24第二介電層1 6 Conduction promoting layer 18 Dielectric layer 2 0 Permanent metal layer 2 2 Second electrode 24 Second dielectric layer
111111
第22頁 1224876 圖式簡單說明 層 B曰 30切割虛線 1 1 0發光二極體磊 1 1 2 N型半導體層 1 1 4主動層 1 1 6 P型半導體層 1 1 7基板 1 1 8 N接合點 1 2 4透明接觸層 1 2 6 P接合點 1 3 0電流 1 3 2 N型氮化鎵半導體層 1 3 3 N型氮化鎵半導體層的表面 1 3 4動層 1 3 6 P型氮化鎵半導體層 1 3 7基板 1 3 9透明接觸層 1 4 0氮化鎵磊晶層 1 4 6 N接合點 1 4 8 P接合點Page 221224876 Brief description of the diagram Layer B 30 Cut dotted line 1 1 0 Light-emitting diode 1 1 2 N-type semiconductor layer 1 1 4 Active layer 1 1 6 P-type semiconductor layer 1 1 7 Substrate 1 1 8 N junction Point 1 2 4 Transparent contact layer 1 2 6 P junction 1 3 0 Current 1 3 2 N-type gallium nitride semiconductor layer 1 3 3 Surface of the n-type gallium nitride semiconductor layer 1 3 4 moving layer 1 3 6 P-type nitrogen GaN semiconductor layer 1 3 7 substrate 1 3 9 transparent contact layer 1 4 0 gallium nitride epitaxial layer 1 4 6 N junction 1 4 8 P junction
第23頁Page 23
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US7994523B2 (en) | 2005-12-16 | 2011-08-09 | Seoul Opto Device Co., Ltd. | AC light emitting diode having improved transparent electrode structure |
US8048696B2 (en) | 2007-07-10 | 2011-11-01 | Delta Electronics, Inc. | Light emitting diode devices and manufacturing method thereof |
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US7994523B2 (en) | 2005-12-16 | 2011-08-09 | Seoul Opto Device Co., Ltd. | AC light emitting diode having improved transparent electrode structure |
US8048696B2 (en) | 2007-07-10 | 2011-11-01 | Delta Electronics, Inc. | Light emitting diode devices and manufacturing method thereof |
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