1360836 九、發明說明 【發明所屬之技術領域】 本發明係關於在微影製程中對被處理基板進行洗淨處 理之基板處理裝置。 【先前技術】 例如於FPD( Flat Panel Display:平面顯示器）的製 造中，於被處理基板之LCD基板上形成特定膜之後，係 藉由以下所謂的微影製程而形成電路圖案，此微影製程係 將作爲處理液之光阻（Photoresist )予以塗佈而形成光阻 膜，且對應於電路圖案使光阻膜曝光並進行顯像處理。 於進行此微影製程之光阻塗佈顯像處理系統中，作爲 有利於對應LCD基板的大型化之顯像方式，所謂的平流 式乃受到囑目。此平流式，爲於水平方向鋪設搬運滾輪或 搬運皮帶而成之搬運路徑上，一邊搬運LCD基板一邊於 搬運中進行顯像、淋洗等、乾燥等之一連串的顯像處理步 驟者。 以往的平流式，係於搬運路徑上從上游端的搬入部至 下游端的搬出部爲止，以水平狀態搬運LCD基板，並以 配置於搬運路徑的上方或下方或旁邊之複數個工具，對在 搬運路徑上爲移動中或暫時停止中之基板進行各階段的步 驟處理（例如參照專利文獻1 )。 例如於洗滌洗淨單元中，係藉由沿著搬運路徑所配置 之洗滌洗淨部、噴出洗淨部、淋洗部、乾燥處理部，對於 -5- 1360836 在搬運路徑上以水平姿勢被搬運之LCD基板，進行去除 基板上的雜質等之洗淨處理。 此時，於洗滌洗淨部當中從基板表面所刷除之雜質， 係藉由之後於噴出洗淨部中之空氣噴出處理、及於淋洗部 中之淋洗液沖浴處理，而從基板上被洗去。 〔專利文獻1〕日本特開2003-83675號公報 【發明內容】 (發明所欲解決之課題） 上述洗滌洗淨單元當中，如第5圖所示，於洗滌洗淨 部中係沿著鋪設有搬運滾子201而成之搬運路徑202，例 如依序配置有氣刀203、第1洗淨噴嘴204、滾筒刷205、 第2洗淨噴嘴206。亦即，被搬運至此洗滌洗淨部200之 LCD基板G，首先藉由從氣刀2 0 3所噴出之噴氣進行噴出 洗淨，從第1洗淨噴嘴204噴出洗淨水之後，藉由滾筒刷 2 05將基板G上的雜質予以刷除。從基板G上刷除之雜質 ，係藉由從第2洗淨噴嘴206所吐出之洗淨液予以沖洗。 然而，於以往的平流式中，由於從洗淨噴嘴吐出洗淨 液至水平姿勢的LCD基板，因此如第6圖所示，於基板 上的噴嘴正下方，洗淨液L並未流動而積存，因而具有基 板上之洗淨液L的厚度過厚之疑慮。 亦即，若基板上之洗淨液L的厚度過厚，則會導致不 僅從洗淨噴嘴204、206所吐出之洗淨液L對基板表面之 洗淨壓降低，並且乾淨的洗淨液無法到達基板表面而使洗 1360836 淨力降低之課題。 此外，由於供應至基板上之洗淨液係在含有雜質的狀 態下殘留於基板上，因而導致於基板乾燥處理後雜質再次 附著於基板G之課題。 再者，若爲了防止雜質的再次附著而增加洗淨噴嘴之 洗淨時間及次數，則會導致不僅因搬運路徑或處理時間的 延長使處理量降低，並且使成本上升之課題。 本發明係鑒於上述情形而創作出之發明，目的在於提 供一種於被處理基板的洗淨處理中，可於洗淨處理後防止 雜質再次附著於基板而有效地進行洗淨處理，並且可實現 處理量提升及低成本化之基板處理裝置。 (用以解決課題之手段） 爲了解決上述課題，本發明之基板處理裝置，爲使用 洗淨液進行被處理基板的洗淨處理之基板處理裝置，其特 徵係具備：形成以上仰的姿勢搬運被處理基板之搬運路徑 ，且藉由上述搬運路徑將上述被處理基板往特定方向搬運 之搬運手段；及將洗淨液供應至在上述搬運路徑中被搬運 之上述被處理基板的上面之洗淨噴嘴；上述搬運路徑係具 備：以水平狀態搬運上述被處理基板之水平部；及形成從 上述水平部呈特定角度的上升傾斜之傾斜部；上述洗淨噴 嘴係配置於上述傾斜部的上方，洗淨液的吐出方向，爲對 水平方向朝下方傾斜特定角度之方向，且成爲上述搬運路 徑的上游方向；將洗淨液吐出至在上述傾斜部上被搬運之 1360836 上述基板的傾斜面。 此外，較理想爲，上述搬運路徑係鋪設有複數個搬運 滾子而形成；上述傾斜部，係沿著搬運方向階段性地提高 並排設置之上述複數個搬運滾子的高度位置而藉此形成。 藉由此構成，此外，由於可使噴嘴正下方所滴落之洗 淨液立即往基板後方流動，因此可減少噴嘴正下方的液體 厚度，結果可防止從噴嘴所吐出且滴落之洗淨液的壓力（ φ 洗淨壓）降低，因此可確實地使新的藥液接觸於基板表面 〇 〆 此外，可使供應至基板上之洗淨液與雜質一同往基板 後方流動而使液體不會殘留，因此可解決雜質的再次附著 之課題。 此外，藉由設置傾斜部，不僅如上述般可提升洗淨效 率，並且可縮短搬運路徑，因此可獲得處理量提升及低成 本化之效果。 % 此外，較理想爲，上述搬運路徑係具有從該搬運路徑 的上游側朝向下游側依序連續形成之第1傾斜部及第2傾 斜部；於上述第1傾斜部及第2傾斜部的上方，設置有分 別將洗淨液吐出至搬運中之上述基板的傾斜面之第1洗淨 '噴嘴及第2洗淨噴嘴；上述第2傾斜部的頂點對上述水平 部之高度尺寸’係形成爲較上述第1傾斜部的頂點之高度 尺寸高。 若爲此構成’由於下游側的第2傾斜部較上游側的第 1傾斜部長，因此更能夠使從第2洗淨噴嘴供應至基板上 1360836 之洗淨'液’以較強的力道有效地朝向基板後端流動，因此 不會於基板上殘留洗淨液而能夠進行洗淨處理。 此外’較理想爲，上述第2洗淨噴嘴所吐出之洗淨液 的吐出量係被控制成較上述第〗洗淨噴嘴所吐出之洗淨液 的吐出量多。 若爲此構成，即使從第1洗淨噴嘴所供應之洗淨液殘 留於基板’亦可藉由之後從第2洗淨噴嘴所供應之多量的 洗淨液，從基板中予以全部沖落。 發明之效果： 根據本發明，可獲得一種於被處理基板的洗淨處理中 ’可於洗淨處理後防止雜質再次附著於基板而有效地進行 洗淨處理’並且可實現處理量提升及低成本化之基板處理 裝置。 【實施方式】 以下係根據圖式，說明本發明之實施型態。第1圖係 顯示可適用本發明的基板處理裝置之塗佈顯像處理系統之 俯視圖。 此塗佈顯像處理系統1 0係設置於無塵室內，例如以 LCD用的玻璃基板爲被處理基板，且於LCD的製程中， 進行微影製程中的洗淨、光阻塗佈、預烘烤、顯像及後烘 烤等之一連串處理。曝光處理係在鄰接於此系統所配置之 外部的曝光裝置12中進行。 -9- 1360836 塗佈顯像處理系統1 ο，係於中心部配置橫向較長的處 理站（P/S) 16，於其長度方向（X方向）的兩端部配置 卡匣站（C/S) 14及介面站（I/F) 18。 卡匣站（C/S) 14爲將卡匣C予以搬出搬入之璋，此 卡匣C可使基板G堆疊多數段而收納複數片，卡匣站（ C/S) 14係具備：於水平的—方向（γ方向）可載置4個 爲止之卡匣承載台20:及對此承載台20上的卡匣C進行 基板G的送入移出之搬運機構22。搬運機構22係具有可 保持基板G之例如爲搬運臂22a，可於X、Υ、Ζ、Θ的4 軸進行動作，且與鄰接的處理站（P/S) 16側進行基板G 的收授。 處理站（P/S ) 1 6，係於在水平的系統長度方向（X 方向）所延伸存在之平行且反向的一對管路A、B上，依 照處理流程或步驟順序而配置各處理部。 詳細而言，於從卡匣站（C/S ) 1 4朝向介面站（I/F ) 1 8側之上游部的管路A，係以一列而配置有洗淨處理部 24、第1熱處理部26、塗佈處理部28及第2熱處理部30 。在此，洗淨處理部24係沿著第1平流搬運路徑3 2，從 上游側依序設置有準分子UV照射單元（e-UV ) 34及可適 用本發明之洗滌洗淨單元（SCR) 36。第1熱處理部26係 沿著第1平流搬運路徑32，從上游側依序設置有黏附單元 (AD) 40及冷卻單元（COL) 42 » 塗佈處理部28係包含光阻塗佈單元（CT) 44及減壓 乾燥單元（VD) 46，於第1平流搬運路徑32與光阻塗佈 -10- 1360836 單元（CT ) 44之間，以及於減壓乾燥單元（VD ) 46與第 2平流搬運路徑48之間，係具備用以將基板G往處理管 路A的方向傳送之搬運機構（圖中未顯示）。第2熱處理 部3 0係沿著第2平流搬運路徑48，從上游側依序設置有 預烘烤單元（PREBAKE) 50及冷卻單元（COL) 52» 另一方面，於從介面站（I/F ) 18朝向卡匣站（C/S ) 1 4側之下游部的管路B，係以一列而配置有顯像單元（ DEV ) 54、i線UV照射單元（i-UV ) 56、後烘烤單元（ POBAKE ) 58、冷卻單元（COL) 60及檢查單元（AP) 62 。這些單元54、56、58、60、62 ’係沿著第3平流搬運路 徑64從上游側依序設置。後烘烤單元（POBAKE ) 58及 冷卻單元（COL ) 60係構成第3熱處理部59。 於兩條管路A、B之間設置有輔助搬運空間66，可以 1片的單位水平載置基板G之搬運梭68，可藉由圖中未顯 示的驅動機構，於處理管路方向（X方向）上進行雙向移 動。 介面站（I/F) 18係具有：用以進行上述第2及第3 平流搬運路徑48、64與基板G之間的接收傳送之搬運裝 置70;及進行鄰接的曝光裝置12與基板G之間的接收傳 送之搬運裝置72，於這些裝置的周圍，配置緩衝承載台（ BUF) 74、延伸潔淨承載台（EXT · COL) 76及周邊裝置 78 = 緩衝承載台（BUF) 74係放置有定置型的緩衝卡匣（ 圖中未顯示）。延伸潔淨承載台（EXT · COL ) 76爲具有 1360836 冷卻功能之基板收授用的承載台，係於兩搬運裝置70、72 之間進行基板G的接收傳送時使用。周邊裝置78可於上 下方堆疊例如爲印字機（TITLER )及周邊曝光裝置（EE )之構成。各搬運裝置70、72係具有可保持基板G之搬 運臂70a、72a，且爲了基板G的收授而能夠存取鄰接的 各部分。 第2圖係顯示此塗佈顯像處理系統10對1片基板G 進行處理之步驟。首先於卡匣站（C/S) 14中，搬運機構 22係從承載台20上的任一個卡匣C中取出1片基板G， 且以上仰的姿勢（以基板的被處理面朝上），將取出後的 基板G搬入至處理站（P/S) 16之處理管路A側的搬入部 ，亦即第1平流搬運路徑32的起點（第2圖的步驟S1) 〇 如此，基板G係以上仰的姿勢，於第1平流搬運路徑 32上朝向處理管路A的下游側搬運。於初段的洗淨處理 部24中，基板G係藉由準分子UV照射單元（e-UV ) 34 及洗漉洗淨單元（SCR ) 3 6依序進行紫外線洗淨處理及洗 滌洗淨處理（步驟S2、S3)。 於洗滌洗淨單元（SCR) 36中，係對在第1平流搬運 路徑3 2上移動之基板G，藉由刷除洗淨及噴出洗淨，從 基板表面將粒子狀的髒污（雜質）去除，之後進行淋洗處 理，最後使用氣刀等使基板G乾燥。 於此洗滌洗淨單元（SCR ) 36中，由於可適用本發明 ，因此其構成及作用效果將於之後詳述。 -12- 1360836 一旦結束洗滌洗淨單元（SCR) 36之一連串的洗淨處 理’則基板G從第1平流搬運路徑32退出並通過第1熱 處理部26。 於第1熱處理部26中，一旦基板G被搬入至黏附單 元；（AD ) 40，則首先進行加熱脫水烘烤處理而去除水分 。接著’對基板G進行使用有蒸氣狀的HMDS之黏附處理 ’使被處理面具有排水性（步驟S4)。於此黏附處理結 束後’基板G係於冷卻單元（COL) 42被冷卻至特定的基 板溫度（步驟S 5 )。之後基板G係從第1平流搬運路徑 32的終點（搬出部）被傳送至塗佈處理部28內的搬運機 構。 於塗佈處理部28中，基板G首先於光阻塗佈單元（ CT ) 44中’例如藉由非旋轉式塗佈法，使用狹縫噴嘴將 光阻液塗佈於基板上面（被處理面），之後於下游側旁的 減壓乾燥單元（VD) 46中，進行依據減壓之乾燥處理（ 步驟S 6 )。 之後’基板G係藉由塗佈處理部28內的搬運機構， 被傳送至第2平流搬運路徑48的起點（搬入部）。基板 G於第2平流搬運路徑48上，亦以上仰的姿勢被搬運往 處理管路A的下游側，並通過第2熱處理部30。 於第2熱處理部30中，基板G首先於預烘烤單元（ PrEBAKE ) 5 0中進行預烘烤’以作爲光阻塗佈後的熱處 理或曝光前的熱處理（步驟S7)。藉由此預烘烤，可將 殘留於基板G上的光阻膜中之溶劑予以蒸發去除，且亦強 -13- 1360836 化光阻膜對基板之密接性。接著’基板G係於冷卻單元（ COL) 52中，被冷卻至特定的基板溫度（步驟sn 。之 後基板G係從弟2平流搬運路徑48的終點（搬出部）被 拉引至介面站（I/F) 18的搬運機構。 於介面站（I/F) 18中，基板G係從延伸潔淨承載台 (EXT . COL) 76被搬入至周邊裝置78的周邊曝光裝置 (EE)。於此處進行用以去除顯像時附著於基板g的周 邊部之光阻之曝光後，傳送至鄰近的曝光裝置12(步驟 S9 )。 於曝光裝置12中，係於基板G上的光阻上曝光出特 定的電路圖案。然後，結束圖案曝光之基板G —旦從曝光 裝置12被送回介面站（I/F) 18，則首先搬入至周邊裝置 78的印字機（TITLER )，並於此處將特定資訊記入於基 板上的特定部位（步驟S 1 0 )。 之後，基板G被送回延伸潔淨承載台（EXT · COL) 76。介面站（I/F) 18中之基板G的搬運以及基板G與曝 光裝置1 2之間的接收傳送，係藉由搬運裝置70、72所進 行。最後，基板G係從搬運裝置70，被搬入至處理站（ P/S) 16的處理管路B側所鋪設之第3平流搬運路徑64 的起點（搬入部）。 如此，基板G此次係以上仰的姿勢，於第3平流搬運 路徑64上朝向處理管路B的下游側搬運。於最初的顯像 單元（DEV ) 54中，基板G係於平流搬運之間進行顯像、 淋洗、乾燥之一連串的顯像處理（步驟S11)。 -14- 1360836 於顯像單元（DEV) 54中結束一連串的顯像處理之基 板G，於載置於第3平流搬運路徑64的狀態下通過下游 側的i線UV照射單元（i-UV ) 56，進行依據i線照射之 脫色處理（步驟S12)。之後，基板G亦於載置於第3平 流搬運路徑64的狀態下，依序通過第3熱處理部59及檢 查單元（AP) 62，於第3熱處理部59中，基板G首先於 後烘烤單元（POBAKE ) 58中進行後烘烤，以作爲顯像處 理後的熱處理（步驟S13)。藉由此後烘烤，可將殘留於 基板G上的光阻膜中之顯像液或洗淨液予以蒸發去除，且 亦強化光阻圖案對基板之密接性。 接著，基板G係於冷卻單元（COL) 60中被冷卻至特 定的基板溫度（步驟S14)。於檢查單元（AP) 62中，係 對基板G上的光阻圖案進行非接觸性的線寬檢查或膜質. 膜厚檢查等（步驟S15)。 之後於卡匣站（C/S ) 14側，搬運機構22係從第3平 流搬運路徑64的終點（搬出部）取出完成塗佈顯像處理 的所有步驟之基板G，並將取出的基板G收納至任一個（ —般爲原先的）卡匣C中（返回步驟S1)。 於此塗佈顯像處理系統10中，如上述般，可將本發 明適用於第1平流搬運路徑3 2上所設置之洗滌洗淨單元 (SCR ) 36。 以下係根據第3圖及第4圖，詳細說明本發明的—實 施型態之洗滌洗淨單元（SCR ) 36的構成及作用。 第3圖係顯示本實施型態之洗滌洗淨單元（SCR) 36 -15- 1360836 的要部構成之槪略剖面.圖。第4圖係模式性顯示此洗滌洗 淨單元（SCR) 36之洗滌洗淨部的構成之圖式。 如圖所示’沿著於水平方向（X方向）所延伸之第1 平流搬運路徑32,從上游側依序設置有搬入部1〇1、洗滌 洗淨部102、噴出洗淨部1〇3、淋洗部104、乾燥部105及 搬出部106。搬運路徑32係構成爲，鋪設有複數個搬運滾 子111 (搬運手段），並藉由圖中未顯示的驅動手段（搬 運手段）使搬運滾子111沿著搬運方向旋轉，而將基板G 予以平流搬運。 首先說明洗漉洗淨單元（SCR ) 36之各處理部的槪略 構成。 於搬入部1 0 1的頂部，裝設有採用下吹方式供應清淨 空氣之風機濾網單元（FFU: Fan Filter Unit) 112。 此外，於洗滌洗淨部102內，沿著搬運路徑32從上 游側依序配置有氣簾噴嘴1 1 3、藥液供應噴嘴（第1洗淨 噴嘴）114、滾筒刷115及洗淨噴嘴（第2洗淨噴嘴）116 〇 氣簾噴嘴113,係以對於通過正下方之基板G,的上面 ’將狹縫狀的空氣流朝向搬運方向的下游側吹出之方式地 配置。此外，其他之洗滌洗淨部102內的藥液供應噴嘴 114、洗淨噴嘴116、搬運滾子111等的配置及動作控制等 ，爲本發明之特徵性的部分，將於之後詳述。 此外，於噴出洗淨部103內，係於搬運路徑32的上 方設置有雙流體噴射噴嘴119作爲噴出洗淨用噴嘴。 -16- 1360836 於淋洗部104內，係於搬運路徑32的上方設置有淋 洗噴嘴1 23。 於乾燥部105內，係於搬運路徑32的上方設置有氣 刀 126。 此外，亦可將淋洗噴嘴123及氣刀126，以包夾搬運 路徑32之方式設置於其左右兩側。此外，亦可於噴出洗 淨部103中，設置用以將洗淨用的淋洗液從搬運路徑32 的下方噴往基板G的下面（內面）之下部淋洗噴嘴（圖中 未顯示）。 此外，於搬出部106的頂部，裝設有採用下吹方式供 應清淨空氣之風機濾網單元（FFU ) 129。 於互爲鄰接之處理部之間，除了搬運路徑32之外， 係分別設置有間隔壁1 4 1、1 4 2、1 4 3、1 4 4。 此外，於進行液體的虜理之處理部102、1〇3、104、 105內，分別設置有用以收集滴落至搬運路徑32下方之平 盤117、120、124、127。於各平盤的底部分別設置有排水 口，於各排水口，分別連接有滴落至平盤之液體的回收系 統或排液系統的配管118、122、125、128。 此外，於位在洗滌洗淨單元（SCR) 36的中心部之噴 出洗淨部1 03內的底部，係設置有連通於例如具備排氣泵 浦或排氣風機之排氣機構（圖中未顯示）之排氣口 Ιϋ。 备 — 接著說明洗滌洗淨部102內之藥液供應噴嘴114、洗 淨噴嘴116、搬運滾子111等的配置及動作控制等。 如第3圖、第4圖所示，於洗滌洗淨部1〇2內，於搬 -17- 1360836 運路徑32中例如形成有2個***部80、81，於這些*** 部80、81中，係分別形成有於搬運方向呈上升傾斜之上 升傾斜部80a (第1傾斜部）、8 1 a (第2傾斜部），於這 些上升傾斜部80a、81a中，係以階段性地提高並排鋪設 之搬運滾子111的高度位置之方式地配置。 亦即，如第4圖所示，***部80的上升傾斜部80a， 係以對水平軸Η (水平部）呈特定角度θ 1 (較理想爲 2^5°)傾斜之方式地配置有搬運滾子ilia、lUb' 111c ，下降傾斜係以搬運滚子1 1 1 c爲頂點，配置有搬運滾子 1 1 1 d、1 1 1 e ° 此外，***部8 1的上升傾斜部8 1 a，係以水平軸Η 上的搬運滾子1 1 1 e爲起點，以對水平軸Η上呈角度θ 1傾 斜之方式地配置有搬運滾子1 1 1 f ' 1 1 1 g，下降傾斜係以搬 運滾子lllg爲頂點，配置有搬運滾子lllh、llli。 此外，藥液供應噴嘴114係配置於***部80之上升 傾斜部80a的上方，其吐出方向係對水平方向朝下方呈特 定角度Θ2(較理想爲35^-45°)傾斜之方向，且成爲搬運 路徑32的上游方向。於***部80的上升傾斜部80a中被 搬運之基板G與噴嘴吐出口之間的距離尺寸hi，較理想 爲 20~3 0mm。 此外，洗淨噴嘴Π 6係配置於***部81之上升傾斜 部81a的上方，其吐出方向係對水平方向朝下方呈特定角 度Θ2(較理想爲35^-45^)傾斜之方向，且成爲搬運路徑 3 2的上游側方向。於***部8 1的上升傾斜部8 1 a中被搬 -18- 1360836 運之基板G與噴嘴吐出口之間的距離尺寸hi，與藥液供 應噴嘴1 14相同，係設定爲20〜30mm。 於藥液供應噴嘴1 1 4中，係從第1液體供應手段1 3 〇 供應有例如酸或鹼系藥液，作爲依據滾筒刷1 1 5進行處理 前所塗佈的藥液（洗淨液），並以特定的吐出壓將藥液吐 出至基板G的表面。 此外，於洗淨噴嘴116中，係從第2液體供應手段 1 3 1供應有例如純水，作爲清洗由滾筒刷所刷除的雜質之 •洗淨液，並以特定的吐出壓將藥液吐出至基板G的表面。 第1液體供應手段1 3 0及第2液體供應手段1 3 1，係 藉由做爲控制手段之控制器1 32所控制，並控制所分別對 應之噴嘴的吐出時機及液體供應量等。 此外，較理想係構成爲，位於下游側之***部8 1 (上 升傾斜部8 1 a的頂點）對水平軸Η之高度尺寸h3，較位 於上游側之***部80 (上升傾斜部80a的頂點）對水平軸 Η之高度尺寸h2高。 如此，由於下游側的上升傾斜都8 1 a較上游側的上升 . v · * - 傾^，因此更能夠使從洗淨噴嘴116供應至基板 G之洗淨液，以較強的力道有 '效地朝向基板後端流動，因 此不會於基板上殘留洗淨液而能夠進行洗淨處理。 此外，較理想係以控制器1 32控制爲，使藉由第2液 體供應手段131從洗淨噴嘴116所吐出之洗淨液的量，較 藉由第1液體供應手段1 3 0從藥液供應噴嘴1 1 4所吐出之 藥液的量多。 -1守- 1360836 如此，即使從藥液供應噴嘴114所供應之藥液殘留於 基板，亦可藉由從洗淨噴嘴116所供應之多量的洗淨液， 從基板G中予以全部沖落。 於如此構成之洗滌洗淨單元（SCR) 36中，進行準分 子UV照射處理後的基板G，如第3圖所示，首先通過搬 入部101被搬運至洗滌洗淨部102。 於洗滌洗淨部102中，於被搬運之基板G的前端即將 φ 到達***部80的上升傾斜部80a起，係藉由藥液供應噴 嘴114開始進行藥液吐出，並於基板上從該前端涵蓋後端 供應藥液。 在此，如第4圖所示，由於從藥液供應噴嘴114所吐 出之藥液係滴落於***部80的上升傾斜部8 0a (朝向搬運 路徑的上游側），因此基板上的藥液會因其本身的重量往 後方流動。亦即，因藥液而溶出於基板上之雜質，係與藥 液一同往基板G的後方流動而沖落。 • 此外，由於滴落至基板上之藥液會立即往基板後方流 動，因此，噴嘴正下方之液體的厚度較薄，而能夠提高從 v 噴嘴所吐出之藥液於滴落時之壓力（洗淨壓），並且確實 地使新的藥液接觸於基板表面，因此可有效地進行基板洗 淨。 於依據藥液供應噴嘴1 1 4進行洗淨後，基板G係立即 一邊刷過滾筒刷1 1 5的下方一邊通過。滾筒刷1 1 5係以圖 中未顯示之刷驅動部的旋轉驅動力，以與搬運方向對抗之 方向旋轉，而刷除基板表面的雜質（塵埃、裂片、污染物 -20- 1360836 等）。 以滾筒刷1 1 5所刷除之雜質，係藉由之後從洗淨噴 116吐出供應至基板上之洗淨水，從基板G中予以沖落 亦即，於被搬運之基板G的前端即將到達***部 的上升傾斜部81a起，係藉由洗淨噴嘴116開始進行洗 液吐出，並於基板上從該前端涵蓋後端供應洗淨液。 在此，如第4圖所示，由於從洗淨噴嘴116所吐出 洗淨液係滴落於***部81的上升傾斜部81a (朝向上游 )，因此基板上的洗淨液會因其本身的重量往後方流動 亦即，以滾筒刷1 1 5所刷除之雜質，係有效率地與洗淨 —同往基板後方流動而從基板G當中予以去除。 此外，由於滴落至基板上之洗淨液會立即往基板後 流動，因此，噴嘴正下方之液體的厚度較薄，而能夠提 從噴嘴所吐出之洗淨液於滴落時之壓力（洗淨壓），並 確實地使新的洗淨液接觸於基板表面，因此可有效地進 基板洗淨。 於洗滌洗淨部102內滴落至基板G及搬運路徑32 下方之液體，係以平盤1 1 7予以收集。 之後，基板G進入至噴出洗淨部103，並藉由雙流 噴射噴嘴119進行噴出洗淨。此雙流體噴射噴嘴119, 將加壓後的洗淨液（例如水）與加壓後的氣體（例如氮 )之混合氣體噴射至基板上，而以加壓後的雙流體之極 的衝擊力，將附著於或殘存於基板G的表面之雜質予以 除。 嘴 » 8 1 淨 之 側 〇 液 方 闻 且 行 的 體 係 氣 強 去 -21 - 1360836 於淋洗部104中，淋洗噴嘴123係朝向於搬運路徑32 上被ark之基板G，供應最終洗淨角的淋洗液。供應至基 板G之淋洗液，係朝向基板後端側而於基板上流動，其大 部分係滴落至淋洗部104內的平盤124內。 於淋洗部104中進行淋洗洗淨後之基板G，係被搬入 至乾燥部105，並於此處藉由氣刀126進行乾燥處理。亦 即，氣刀126係以與搬運方向爲相反之方向，將高壓氣體 流吹往基板G，藉此使殘留於基板G上之淋洗液往基板後 方靠近，而從基板後端吹出（液體吹除）。 之後，於乾燥部1 〇 5中進行液體吹除後之基板G，係 從搬出部106被搬出，然後被搬入至黏附單元（AD) 40 〇 以上，根據本發明的基板處理裝置之實施型態，於進 行基板洗淨之洗滌洗淨部102內，係於搬運路徑32連續 設置***部80、纟1，且以使洗淨液滴落至各個上升傾斜部 8 0a、8 1a (朝向上游側）之方式地配置噴嘴。藉此，可使 供應至基板上之洗淨液與質一同往基板後方流動而使液 體不會殘留，因此可解決雜質的再次附著之課題。 此外，由於在噴嘴正下方所滴落之洗淨液會立即往基 板後方流動，因此可減少噴嘴正下方的液體厚度，結果可 防止從噴嘴所吐出且滴落之洗淨液的壓力（洗淨壓）降低 ，因而能夠有效地進行基板洗淨。 此外，藉由設置上升傾斜部80a、81a，不僅如上述般 可提升洗淨效率，並且可縮短搬運路徑32，因此可獲得處 -22- 1360836 理量提升及低成本化之效果。 本發明之被處理基板並不限定於LCD基板，亦可爲 平面顯示器用的各種基板，或是半導體晶圓、CD基板、 玻璃基板 '光罩、印刷電路板等。 產業上之可利用性： 本發明可適用於對LCD基板等進行洗淨處理之基板 處理裝置’於半導體製造業及電子裝置製造業界等當中乃 極爲適用* 【圖式簡單說明】 第1圖係顯示可適用本發明的基板處理裝置之塗佈顯 像處理系統之俯視圖。 第2圖係顯示第1圖的塗佈顯像處理系統之基板處理 的流程之流程圖》 第3圖係顯示第1圖的塗佈顯像處理系統所具備之洗 滌洗淨單元之要部的構成之槪略剖面圖。 第4圖係模式性顯示第3圖的洗滌洗淨單元之洗滌洗 淨部的構成之圖式。 第5圖係顯示以往之洗滌洗淨部的構成之槪略剖面圖 〇 第6圖係顯示第5圖的洗滌洗淨部之要部擴大圖。 【主要元件符號說明】 -23- 丨1360836 ίο:塗佈顯像處理系統（基板處理裝置） 3 2 :搬運路徑 36 :洗滌洗淨單元 80 :***部（第1***部） 80a :上升傾斜部（第1傾斜部） 81:***部（第2***部） 8 1 a :上升傾斜部（第2傾斜部） φ 102 :洗滌洗淨部 111:搬運滾子（搬運手段） 114:藥液供應噴嘴（第1洗淨噴嘴） 1 1 5 :滾筒刷 116:洗淨噴嘴（第2洗淨噴嘴） 1 3 0 :藥液供應手段 1 3 1 :洗淨液供應手段 1 3 2 :控制器 # G : LCD基板（被處理基板） -24-1360836 IX. Description of the Invention [Technical Field] The present invention relates to a substrate processing apparatus for performing a cleaning process on a substrate to be processed in a lithography process. [Prior Art] For example, in the manufacture of an FPD (Flat Panel Display), after a specific film is formed on an LCD substrate of a substrate to be processed, a circuit pattern is formed by a so-called lithography process, and the lithography process is performed. A photoresist film is applied as a photoresist of the treatment liquid to form a photoresist film, and the photoresist film is exposed and subjected to development processing corresponding to the circuit pattern. In the photoresist coating development processing system for performing the lithography process, the so-called advection type has been attracting attention as a development method which is advantageous for the enlargement of the corresponding LCD substrate. This flat flow type is a series of development processing steps such as development, rinsing, and drying, etc., while transporting the LCD substrate while transporting the transport roller or transporting the belt in the horizontal direction. In the conventional advection type, the LCD substrate is transported in a horizontal state from the loading portion at the upstream end to the unloading portion at the downstream end on the transport path, and the plurality of tools are disposed above or below the transport path. The step of performing the respective steps for the substrate that is moving or temporarily stopped (for example, refer to Patent Document 1). For example, in the washing and cleaning unit, the washing and washing unit, the washing and washing unit, the rinsing unit, and the drying unit are disposed along the conveyance path, and are transported in a horizontal posture on the conveyance path of -5 to 1360836. The LCD substrate is subjected to a cleaning process for removing impurities or the like on the substrate. At this time, the impurities which are removed from the surface of the substrate in the washing and cleaning portion are subjected to the air discharge treatment in the discharge cleaning portion and the eluent treatment in the rinse portion, thereby removing the impurities from the substrate. Was washed away. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2003-83675 (Problem to be Solved by the Invention) In the above-described washing and cleaning unit, as shown in Fig. 5, the washing and washing unit is provided along the floor. The conveyance path 202 in which the roller 201 is conveyed is, for example, an air knife 203, a first cleaning nozzle 204, a roller brush 205, and a second cleaning nozzle 206. In other words, the LCD substrate G conveyed to the washing and cleaning unit 200 is first ejected and washed by the air jet ejected from the air knife 203, and the washing water is ejected from the first cleaning nozzle 204, and then the drum is driven by the drum. The brush 2 05 brushes the impurities on the substrate G. The impurities removed from the substrate G are washed by the cleaning liquid discharged from the second cleaning nozzle 206. However, in the conventional advection type, since the cleaning liquid is discharged from the cleaning nozzle to the LCD substrate in the horizontal posture, as shown in FIG. 6, the cleaning liquid L does not flow and accumulates directly under the nozzle on the substrate. Therefore, there is a concern that the thickness of the cleaning liquid L on the substrate is too thick. In other words, if the thickness of the cleaning liquid L on the substrate is too thick, the cleaning pressure of the cleaning liquid L discharged from the cleaning nozzles 204 and 206 on the substrate surface is lowered, and the clean washing liquid cannot be cleaned. The problem of reaching the surface of the substrate and reducing the net power of washing 1360836. Further, since the cleaning liquid supplied onto the substrate remains on the substrate in the state containing impurities, the problem of the impurities adhering to the substrate G again after the substrate drying treatment is caused. Further, if the cleaning time and the number of times of cleaning the nozzles are increased in order to prevent re-adhesion of the impurities, the amount of processing is lowered not only by the extension of the conveyance path or the processing time, but also the cost is increased. The present invention has been made in view of the above circumstances, and it is an object of the invention to provide a cleaning process capable of preventing impurities from adhering to a substrate again after the cleaning process in the cleaning process of the substrate to be processed, and to achieve processing. A substrate processing device with increased capacity and low cost. In order to solve the problem, the substrate processing apparatus of the present invention is a substrate processing apparatus that performs a cleaning process on a substrate to be processed using a cleaning liquid, and is characterized in that the substrate processing apparatus is configured to be placed in a posture that is raised above. a conveyance path for processing the substrate, a conveyance means for conveying the substrate to be processed in a specific direction by the conveyance path, and a cleaning nozzle for supplying the cleaning liquid to the upper surface of the substrate to be processed conveyed in the conveyance path The transport path includes: a horizontal portion that transports the substrate to be processed in a horizontal state; and an inclined portion that rises at a specific angle from the horizontal portion; the cleaning nozzle is disposed above the inclined portion, and is cleaned The discharge direction of the liquid is a direction in which the horizontal direction is inclined downward by a specific angle, and is the upstream direction of the conveyance path, and the cleaning liquid is discharged to the inclined surface of the substrate 1360836 conveyed on the inclined portion. Further, it is preferable that the transport path is formed by laminating a plurality of transport rollers, and the inclined portion is formed by gradually increasing the height positions of the plurality of transport rollers arranged side by side in the transport direction. According to this configuration, since the washing liquid dripped directly below the nozzle can immediately flow toward the rear of the substrate, the thickness of the liquid directly under the nozzle can be reduced, and as a result, the washing liquid which is discharged from the nozzle and dripped can be prevented. The pressure (φ cleaning pressure) is lowered, so that the new chemical solution can be surely brought into contact with the surface of the substrate. Further, the cleaning liquid supplied to the substrate can be moved along with the impurities to the rear of the substrate, so that the liquid does not remain. Therefore, the problem of reattachment of impurities can be solved. Further, by providing the inclined portion, not only the cleaning efficiency can be improved as described above, but also the conveyance path can be shortened, so that the effect of improving the throughput and the low cost can be obtained. Further, it is preferable that the conveyance path has a first inclined portion and a second inclined portion that are sequentially formed continuously from the upstream side to the downstream side of the conveyance path, and above the first inclined portion and the second inclined portion. a first cleaning 'nozzle and a second cleaning nozzle for discharging the cleaning liquid to the inclined surface of the substrate during transportation; the height of the horizontal portion of the apex of the second inclined portion is formed as The height of the apex of the first inclined portion is higher than the height. In this case, the second inclined portion on the downstream side is formed by the first inclined portion on the upstream side, so that the cleaning liquid which is supplied from the second cleaning nozzle to the 1360836 on the substrate can be effectively used with a strong force. Since it flows toward the rear end of the substrate, the cleaning process can be performed without leaving the cleaning liquid on the substrate. Further, it is preferable that the discharge amount of the cleaning liquid discharged from the second cleaning nozzle is controlled to be larger than the discharge amount of the cleaning liquid discharged from the first cleaning nozzle. According to this configuration, even if the cleaning liquid supplied from the first cleaning nozzle remains on the substrate ‘, the amount of the cleaning liquid supplied from the second cleaning nozzle can be completely washed off from the substrate. Advantageous Effects of Invention According to the present invention, it is possible to obtain an effective treatment for preventing the impurities from adhering to the substrate again after the cleaning process in the cleaning process of the substrate to be processed, and to achieve an increase in throughput and low cost. Substrate processing device. [Embodiment] Hereinafter, embodiments of the present invention will be described based on the drawings. Fig. 1 is a plan view showing a coating development processing system to which a substrate processing apparatus of the present invention is applicable. The coating development processing system 10 is installed in a clean room, for example, a glass substrate for LCD is used as a substrate to be processed, and in the process of the LCD, cleaning, photoresist coating, and pre-processing in the lithography process are performed. One of a series of processing such as baking, developing and post-baking. The exposure process is performed in an exposure apparatus 12 adjacent to the outside of which the system is disposed. -9- 1360836 Coating development processing system 1 ο, a processing station (P/S) 16 with a horizontally long position is arranged at the center, and a card station is arranged at both ends in the longitudinal direction (X direction) (C/ S) 14 and interface station (I/F) 18. The cassette station (C/S) 14 is for loading and unloading the cassette C. The cassette C can stack a plurality of substrates G and accommodate a plurality of sheets, and the cassette station (C/S) 14 system has: horizontally In the direction (γ direction), the cassette carrier 20 can be placed four times: and the transport mechanism 22 for feeding and removing the substrate G on the cassette C on the stage 20 is placed. The transport mechanism 22 has, for example, a transport arm 22a that can hold the substrate G, and can operate on four axes of X, Υ, Ζ, and ,, and the substrate G can be received from the adjacent processing station (P/S) 16 side. . Processing station (P/S) 1-6, which is arranged in a parallel and reverse pair of pipes A and B extending in the horizontal system length direction (X direction), and configured according to the processing flow or the sequence of steps unit. Specifically, in the pipeline A from the cassette station (C/S) 14 toward the upstream portion of the interface station (I/F) 18 side, the cleaning processing unit 24 and the first heat treatment are arranged in a row. The portion 26, the coating treatment portion 28, and the second heat treatment portion 30. Here, the cleaning processing unit 24 is provided along the first advection conveying path 3 2, and an excimer UV irradiation unit (e-UV) 34 is sequentially provided from the upstream side, and a washing and cleaning unit (SCR) to which the present invention is applicable is applied. 36. The first heat treatment unit 26 is provided along the first advection conveyance path 32, and has an adhesion unit (AD) 40 and a cooling unit (COL) 42 from the upstream side. The coating treatment unit 28 includes a photoresist coating unit (CT). 44 and a reduced pressure drying unit (VD) 46 between the first advection conveying path 32 and the photoresist coating-10-1360836 unit (CT) 44, and the decompression drying unit (VD) 46 and the second advection Between the conveyance paths 48, there is provided a conveyance mechanism (not shown) for conveying the substrate G in the direction of the processing line A. The second heat treatment unit 30 is provided along the second advection conveyance path 48, and is provided with a prebaking unit (PREBAKE) 50 and a cooling unit (COL) 52» from the upstream side, on the other hand, from the interface station (I/ F) 18 is directed to the line B of the downstream portion of the cassette station (C/S) 14 side, and the development unit (DEV) 54 and the i-line UV irradiation unit (i-UV) 56 are arranged in one row. Baking unit (POBAKE) 58, cooling unit (COL) 60 and inspection unit (AP) 62. These units 54, 56, 58, 60, 62' are sequentially disposed from the upstream side along the third advection conveying path 64. The post-baking unit (POBAKE) 58 and the cooling unit (COL) 60 constitute a third heat treatment unit 59. An auxiliary transfer space 66 is disposed between the two pipes A and B, and the transport shuttle 68 of the substrate G can be placed on a unit horizontally. The drive mechanism is not shown in the drawing. Move in both directions on the direction). The interface station (I/F) 18 includes: a transport device 70 for performing reception and transmission between the second and third advection transport paths 48 and 64 and the substrate G; and an adjacent exposure device 12 and substrate G A transfer device 72 for receiving and transporting is disposed around the devices, and a buffer stage (BUF) 74, an extended clean stage (EXT · COL) 76, and a peripheral device 78 = a buffer stage (BUF) 74 are placed. Type of buffer card (not shown). The extension cleaning stage (EXT · COL ) 76 is a stage for receiving a substrate having a 1360836 cooling function, and is used for receiving and transmitting the substrate G between the two conveying devices 70 and 72. The peripheral device 78 can be stacked above and below, for example, as a printer (TITLER) and a peripheral exposure device (EE). Each of the transporting devices 70 and 72 has transporting arms 70a and 72a capable of holding the substrate G, and is capable of accessing adjacent portions for the purpose of receiving the substrate G. Fig. 2 shows the steps of processing the one substrate G by the coating development processing system 10. First, in the cassette station (C/S) 14, the transport mechanism 22 takes out one of the substrates G from any one of the cassettes C on the stage 20, and the posture of the upper side is raised (the processed surface of the substrate faces upward) The taken-out substrate G is carried into the loading portion on the processing line A side of the processing station (P/S) 16, that is, the starting point of the first convective conveying path 32 (step S1 in Fig. 2). The posture of the upward movement is carried on the first advection conveying path 32 toward the downstream side of the treatment line A. In the first stage of the cleaning treatment unit 24, the substrate G is sequentially subjected to ultraviolet cleaning treatment and washing and washing treatment by an excimer UV irradiation unit (e-UV) 34 and a washing and cleaning unit (SCR) 36. Steps S2, S3). In the washing and cleaning unit (SCR) 36, the substrate G that has moved on the first advancing conveying path 3 2 is cleaned by washing and washing, and particulate dirt (impurities) are formed from the surface of the substrate. After the removal, the rinsing treatment is performed, and finally the substrate G is dried using an air knife or the like. In the washing and cleaning unit (SCR) 36, since the present invention can be applied, the constitution and effects thereof will be described in detail later. -12- 1360836 When the washing process of one of the washing and cleaning units (SCR) 36 is completed, the substrate G is withdrawn from the first advancing conveyance path 32 and passes through the first heat treatment unit 26. In the first heat treatment unit 26, once the substrate G is carried into the adhesion unit; (AD) 40, the heat dehydration baking treatment is first performed to remove the moisture. Then, the adhesion treatment using the vapor-form HMDS on the substrate G is performed to make the surface to be treated water-repellent (step S4). After the adhesion process is completed, the substrate G is cooled to a specific substrate temperature by the cooling unit (COL) 42 (step S5). Then, the substrate G is transported from the end point (the carry-out portion) of the first advection transport path 32 to the transport mechanism in the coating processing unit 28. In the coating processing unit 28, the substrate G is first applied to the upper surface of the substrate by using a slit nozzle in the photoresist coating unit (CT) 44, for example, by a non-rotation coating method (the processed surface) Then, in the reduced-pressure drying unit (VD) 46 next to the downstream side, drying treatment according to reduced pressure is performed (step S6). Thereafter, the substrate G is transported to the starting point (loading portion) of the second advancing transport path 48 by the transport mechanism in the coating processing unit 28. The substrate G is transported to the downstream side of the processing line A on the second advancing conveyance path 48, and passes through the second heat treatment unit 30. In the second heat treatment section 30, the substrate G is first prebaked in the prebaking unit (PrEBAKE) 50 as heat treatment after photoresist coating or heat treatment before exposure (step S7). By this prebaking, the solvent remaining in the photoresist film on the substrate G can be evaporated and removed, and the adhesion of the photoresist film to the substrate is also strong. Then, the substrate G is cooled in the cooling unit (COL) 52, and is cooled to a specific substrate temperature (step sn). Then, the substrate G is pulled from the end point (the carrying-out portion) of the second-pass flow path 48 to the interface station (I /F) 18 transport mechanism. In the interface station (I/F) 18, the substrate G is carried from the extended clean stage (EXT. COL) 76 to the peripheral exposure device (EE) of the peripheral device 78. Here The exposure for removing the photoresist attached to the peripheral portion of the substrate g during development is performed, and then transferred to the adjacent exposure device 12 (step S9). In the exposure device 12, the photoresist is exposed on the substrate G. The specific circuit pattern. Then, the substrate G that has finished the pattern exposure is returned to the interface station (I/F) 18 from the exposure device 12, and then first moved to the printer (TITLER) of the peripheral device 78, and will be here. The specific information is recorded in a specific portion on the substrate (step S10). Thereafter, the substrate G is sent back to the extended cleaning stage (EXT·COL) 76. The substrate G in the interface station (I/F) 18 is transported and the substrate The receiving transmission between G and the exposure device 12 is carried out by the handling devices 70, 72. Finally, the substrate G is carried from the conveyance device 70 to the start point (loading portion) of the third advection conveyance path 64 laid on the processing line B side of the processing station (P/S) 16. Thus, the substrate G is The posture in which the secondary system is raised upward is transported toward the downstream side of the processing line B on the third advection conveying path 64. In the first developing unit (DEV) 54, the substrate G is developed and transported between the advection conveyances. A series of development processes of washing and drying (step S11). -14- 1360836 A substrate G that has completed a series of development processes in the developing unit (DEV) 54 is placed in the third advection conveying path 64. Decolorization processing by i-line irradiation is performed by the i-line UV irradiation unit (i-UV) 56 on the downstream side (step S12). Thereafter, the substrate G is placed on the third advection conveyance path 64, in order. By the third heat treatment unit 59 and the inspection unit (AP) 62, in the third heat treatment unit 59, the substrate G is first post-baked in the post-baking unit (POBAKE) 58 as a heat treatment after the development processing (step S13). By this post-baking, the photoresist remaining on the substrate G can be The developing solution or the cleaning solution in the film is removed by evaporation, and the adhesion of the photoresist pattern to the substrate is also enhanced. Next, the substrate G is cooled to a specific substrate temperature in the cooling unit (COL) 60 (step S14). In the inspection unit (AP) 62, a non-contact line width inspection, a film quality, a film thickness inspection, and the like are performed on the photoresist pattern on the substrate G (step S15). Thereafter, at the card station (C/S) 14 On the side, the transport mechanism 22 takes out the substrate G that has completed all steps of the application development process from the end point (the carry-out portion) of the third flow-through transport path 64, and stores the taken-out substrate G in any one (generally the original). In the cassette C (return to step S1). In the coating development processing system 10, as described above, the present invention can be applied to the washing and cleaning unit (SCR) 36 provided on the first advection conveying path 3 2 . Hereinafter, the configuration and action of the washing and washing unit (SCR) 36 of the embodiment of the present invention will be described in detail based on Figs. 3 and 4. Fig. 3 is a schematic cross-sectional view showing the main part of the washing and cleaning unit (SCR) 36 -15 to 1360836 of the present embodiment. Fig. 4 is a view schematically showing the configuration of the washing and washing unit of the washing and washing unit (SCR) 36. As shown in the figure, the first advection conveying path 32 extending in the horizontal direction (X direction) is provided with a loading unit 1〇, a washing and cleaning unit 102, and a washing and cleaning unit 1〇3 in this order from the upstream side. The rinsing unit 104, the drying unit 105, and the unloading unit 106. The conveyance path 32 is configured such that a plurality of conveyance rollers 111 (transport means) are laid, and the conveyance roller 111 is rotated in the conveyance direction by a driving means (transport means) not shown, and the substrate G is placed. Advance handling. First, a schematic configuration of each processing unit of the washing and cleaning unit (SCR) 36 will be described. At the top of the loading unit 1 0 1 , a fan filter unit (FFU: Fan Filter Unit) 112 that supplies clean air by a down-blowing method is installed. Further, in the washing and cleaning unit 102, the air curtain nozzle 1 1 3, the chemical liquid supply nozzle (first cleaning nozzle) 114, the roller brush 115, and the washing nozzle are arranged in this order from the upstream side along the transport path 32. 2 Washing nozzles 116 The xenon curtain nozzles 113 are arranged such that the upper surface of the substrate G passing directly below is blown toward the downstream side in the conveying direction. In addition, the arrangement and operation control of the chemical supply nozzle 114, the cleaning nozzle 116, the transport roller 111, and the like in the other washing and cleaning unit 102 are characteristic parts of the present invention, and will be described in detail later. Further, in the discharge cleaning unit 103, a two-fluid injection nozzle 119 is provided above the conveyance path 32 as a discharge cleaning nozzle. In the rinse unit 104, a shower nozzle 133 is provided above the conveyance path 32. In the drying unit 105, an air knife 126 is provided above the conveyance path 32. Further, the shower nozzle 123 and the air knife 126 may be provided on the right and left sides so as to sandwich the transport path 32. Further, in the discharge cleaning unit 103, a shower nozzle for discharging the cleaning eluent from the lower side of the conveyance path 32 to the lower surface (inner surface) of the substrate G may be provided (not shown). . Further, a fan filter unit (FFU) 129 for supplying clean air by a down-blowing method is installed at the top of the carry-out portion 106. Between the processing units adjacent to each other, partition walls 1 4 1 , 1 4 2, 1 4 3, and 1 4 4 are provided in addition to the transport path 32. Further, in the processing sections 102, 1〇3, 104, and 105 for performing liquid processing, spacers 117, 120, 124, and 127 which are dropped to the lower side of the conveyance path 32 are provided, respectively. Drain ports are provided at the bottoms of the respective flat plates, and pipes 118, 122, 125, and 128 of the liquid recovery system or the liquid discharge system which are dropped to the flat plates are respectively connected to the respective drain ports. Further, a bottom portion of the discharge cleaning portion 103 located at the center of the washing and cleaning unit (SCR) 36 is provided with an exhaust mechanism that communicates with, for example, an exhaust pump or an exhaust fan (not shown). Show) the exhaust port Ιϋ.备. Next, the arrangement, operation control, and the like of the chemical supply nozzle 114, the cleaning nozzle 116, the transport roller 111, and the like in the washing and cleaning unit 102 will be described. As shown in FIG. 3 and FIG. 4, in the washing and cleaning unit 1〇2, for example, two raised portions 80 and 81 are formed in the transporting -17 to 1360836 transport path 32, and in these raised portions 80 and 81, The rising inclined portion 80a (first inclined portion) and the 8 1 a (second inclined portion) which are inclined upward in the conveyance direction are formed, and the rising inclined portions 80a and 81a are stepwisely raised side by side. The height position of the transporting roller 111 to be laid is arranged in such a manner. In other words, as shown in Fig. 4, the rising inclined portion 80a of the raised portion 80 is disposed so as to be inclined at a specific angle θ 1 (preferably 2^5°) to the horizontal axis 水平 (horizontal portion). Roller ilia, lUb' 111c, descending inclination system with the transport roller 1 1 1 c as the apex, and the transport roller 1 1 1 d, 1 1 1 e °, and the rising inclined portion 8 1 a of the raised portion 8 1 The transport roller 1 1 1 f ' 1 1 1 g is placed with the transport roller 1 1 1 e on the horizontal axis 为 as the starting point, and the horizontal axis 倾斜 is inclined at an angle θ 1 , and the tilting system is lowered. The transport rollers 111h and llli are disposed with the transport roller lllg as a vertex. Further, the chemical liquid supply nozzle 114 is disposed above the rising inclined portion 80a of the raised portion 80, and the discharge direction thereof is inclined in a direction at a specific angle Θ2 (preferably 35^-45°) downward in the horizontal direction, and becomes The upstream direction of the transport path 32. The distance dimension hi between the substrate G to be conveyed in the rising inclined portion 80a of the raised portion 80 and the nozzle discharge port is preferably 20 to 30 mm. Further, the cleaning nozzle Π 6 is disposed above the rising inclined portion 81a of the swelled portion 81, and the discharge direction thereof is inclined at a specific angle Θ2 (preferably 35^-45^) in the horizontal direction downward, and becomes The upstream side direction of the transport path 3 2 . The distance dimension hi between the substrate G and the nozzle discharge port carried by the -18- 1360836 in the rising inclined portion 8 1 a of the raised portion 8 1 is set to be 20 to 30 mm in the same manner as the chemical liquid supply nozzle 1 14 . In the chemical liquid supply nozzle 1 1 4, for example, an acid or an alkali-based chemical liquid is supplied from the first liquid supply means 1 3 , as a chemical solution (washing liquid applied before the treatment by the roller brush 1 15). And, the drug solution is discharged to the surface of the substrate G at a specific discharge pressure. Further, in the cleaning nozzle 116, for example, pure water is supplied from the second liquid supply means 113, as a cleaning liquid for cleaning impurities removed by the roller brush, and the liquid is discharged at a specific discharge pressure. It is discharged to the surface of the substrate G. The first liquid supply means 1 30 and the second liquid supply means 1 3 1 are controlled by the controller 1 32 as a control means, and control the discharge timing, the liquid supply amount, and the like of the respective nozzles. Further, it is preferable that the height portion h3 of the ridge portion 8 1 on the downstream side (the apex of the rising slope portion 8 1 a) to the horizontal axis , is higher than the ridge portion 80 on the upstream side (the apex of the rising slope portion 80a) ) The height dimension h2 of the horizontal axis is high. In this way, the rising slope of the downstream side is increased from the upstream side by 8 1 a. v · * - Tilting, so that the cleaning liquid supplied from the cleaning nozzle 116 to the substrate G can be made with a stronger force. Since the effect flows toward the rear end of the substrate, the cleaning process can be performed without leaving the cleaning liquid on the substrate. Further, it is preferable that the controller 1 32 controls the amount of the cleaning liquid discharged from the cleaning nozzle 116 by the second liquid supply means 131 from the liquid medicine by the first liquid supply means 1 30. The amount of the liquid medicine discharged from the supply nozzle 1 14 is large. -1守守-1360836 Thus, even if the chemical liquid supplied from the chemical supply nozzle 114 remains on the substrate, it can be completely washed off from the substrate G by the amount of the cleaning liquid supplied from the cleaning nozzle 116. In the washing and cleaning unit (SCR) 36 configured as described above, the substrate G subjected to the quasi-molecular UV irradiation treatment is first transported to the washing and cleaning unit 102 by the carrying unit 101 as shown in Fig. 3 . In the washing and cleaning unit 102, when the front end of the substrate G to be conveyed φ reaches the rising inclined portion 80a of the raised portion 80, the chemical liquid supply nozzle 114 starts to discharge the chemical liquid, and the liquid crystal is discharged from the front end of the substrate. Covers the back end supply of liquid medicine. Here, as shown in Fig. 4, the chemical liquid discharged from the chemical supply nozzle 114 is dropped on the rising inclined portion 80a of the raised portion 80 (toward the upstream side of the transport path), so that the chemical liquid on the substrate It will flow backwards due to its own weight. In other words, the impurities dissolved on the substrate due to the chemical solution flow toward the rear of the substrate G together with the chemical solution and are washed off. • In addition, since the liquid dripping onto the substrate immediately flows toward the back of the substrate, the thickness of the liquid directly under the nozzle is thinner, and the pressure of the liquid discharged from the v nozzle at the time of dripping can be increased (washing) The net pressure is, and the new chemical liquid is surely brought into contact with the surface of the substrate, so that the substrate can be effectively washed. After the cleaning is performed in accordance with the chemical supply nozzle 112, the substrate G is immediately passed while being brushed under the roller brush 115. The roller brush 1 15 is rotated in a direction opposite to the conveying direction by a rotational driving force of the brush driving portion (not shown) to remove impurities (dust, lobes, contaminants -20-1360836, etc.) on the surface of the substrate. The impurities brushed by the roller brush 115 are discharged from the substrate G by discharging the washing water supplied onto the substrate from the cleaning spray 116, that is, at the front end of the substrate G to be transported. When the rising inclined portion 81a reaches the raised portion, the washing liquid discharge is started by the washing nozzle 116, and the washing liquid is supplied from the front end to the rear end on the substrate. Here, as shown in Fig. 4, since the washing liquid discharged from the washing nozzle 116 is dropped on the rising inclined portion 81a (upward) of the swelled portion 81, the washing liquid on the substrate is due to its own When the weight flows to the rear, the impurities brushed by the roller brush 1 15 are efficiently removed from the substrate G by the same flow as the cleaning. In addition, since the cleaning liquid dropped onto the substrate immediately flows toward the substrate, the thickness of the liquid directly under the nozzle is thin, and the pressure of the washing liquid discharged from the nozzle at the time of dripping can be raised (washing The net pressure) and the new cleaning liquid are surely brought into contact with the surface of the substrate, so that the substrate can be efficiently washed. The liquid dropped into the substrate G and the conveyance path 32 in the washing and cleaning unit 102 is collected by the flat plate 1 17 . Thereafter, the substrate G enters the discharge cleaning portion 103, and is ejected and washed by the double-flow ejection nozzle 119. The two-fluid injection nozzle 119 sprays a mixed gas of the pressurized cleaning liquid (for example, water) and the pressurized gas (for example, nitrogen) onto the substrate, and the impact force of the pressurized two-fluid electrode is applied. The impurities attached to or remaining on the surface of the substrate G are removed. Mouth» 8 1 The side of the sputum is scented and the system is strong. -21 - 1360836 In the rinsing unit 104, the rinsing nozzle 123 is oriented toward the substrate G of the ark on the transport path 32 to supply the final cleaning angle. Eluent. The eluent supplied to the substrate G flows toward the rear end side of the substrate and flows on the substrate, and most of it falls into the flat disk 124 in the rinsing portion 104. The substrate G which has been rinsed and washed in the elution unit 104 is carried into the drying unit 105, where it is dried by the air knife 126. That is, the air knife 126 blows the high-pressure gas stream to the substrate G in a direction opposite to the conveyance direction, whereby the eluent remaining on the substrate G approaches the rear of the substrate, and is blown out from the rear end of the substrate (liquid Blow off). After that, the substrate G after the liquid is blown out in the drying unit 1 〇 5 is carried out from the carry-out unit 106 and then carried into the adhesion unit (AD) 40 〇 or more, and the substrate processing apparatus according to the present invention is implemented. In the washing and cleaning unit 102 for cleaning the substrate, the ridges 80 and 纟1 are continuously provided on the conveyance path 32, and the cleaning liquid droplets are dropped to the respective rising inclined portions 80a and 81a (toward the upstream side). The nozzle is configured in a manner. As a result, the cleaning liquid supplied onto the substrate can flow toward the back of the substrate together with the substance, so that the liquid does not remain, so that the problem of re-adhesion of impurities can be solved. In addition, since the washing liquid dripped directly under the nozzle immediately flows toward the back of the substrate, the thickness of the liquid directly under the nozzle can be reduced, and as a result, the pressure of the washing liquid which is discharged from the nozzle and dripped can be prevented (washing The pressure is lowered, so that the substrate can be effectively washed. Further, by providing the rising inclined portions 80a and 81a, not only the cleaning efficiency can be improved as described above, but also the conveyance path 32 can be shortened, so that the effect of the improvement of the amount of the -22-1360836 and the cost reduction can be obtained. The substrate to be processed of the present invention is not limited to the LCD substrate, and may be various substrates for a flat panel display, or a semiconductor wafer, a CD substrate, a glass substrate, a photomask, a printed circuit board, or the like. INDUSTRIAL APPLICABILITY The present invention is applicable to a substrate processing apparatus for cleaning an LCD substrate or the like, and is extremely suitable for use in the semiconductor manufacturing industry and the electronic device manufacturing industry. [Simplified illustration] Fig. 1 A plan view showing a coating development processing system to which the substrate processing apparatus of the present invention is applicable is shown. Fig. 2 is a flow chart showing the flow of the substrate processing of the coating development processing system of Fig. 1. Fig. 3 is a view showing the main part of the washing and cleaning unit provided in the coating development processing system of Fig. 1 A schematic cross-section of the composition. Fig. 4 is a view schematically showing the configuration of the washing and washing unit of the washing and washing unit of Fig. 3 . Fig. 5 is a schematic cross-sectional view showing the structure of a conventional washing and washing unit. Fig. 6 is an enlarged view of a main part of the washing and washing unit of Fig. 5. [Description of main component symbols] -23- 丨1360836 ίο: Coating development processing system (substrate processing apparatus) 3 2 : Transport path 36 : Washing and cleaning unit 80 : Protruding part (1st raised part) 80a : Upward inclined part (1st inclined portion) 81: raised portion (second raised portion) 8 1 a : raised inclined portion (second inclined portion) φ 102 : washing and cleaning portion 111 : transporting roller (transporting means) 114 : chemical liquid supply Nozzle (first washing nozzle) 1 1 5 : Roller brush 116: Washing nozzle (second washing nozzle) 1 3 0 : Chemical liquid supply means 1 3 1 : Cleaning liquid supply means 1 3 2 : Controller # G : LCD substrate (substrate to be processed) -24-