TWI357229B - Directly modulated laser optical transmission syst - Google Patents
Directly modulated laser optical transmission syst Download PDFInfo
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- TWI357229B TWI357229B TW094108415A TW94108415A TWI357229B TW I357229 B TWI357229 B TW I357229B TW 094108415 A TW094108415 A TW 094108415A TW 94108415 A TW94108415 A TW 94108415A TW I357229 B TWI357229 B TW I357229B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/504—Laser transmitters using direct modulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
- H01S5/06213—Amplitude modulation
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/25—Arrangements specific to fibre transmission
- H04B10/2575—Radio-over-fibre, e.g. radio frequency signal modulated onto an optical carrier
- H04B10/25751—Optical arrangements for CATV or video distribution
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/501—Structural aspects
- H04B10/503—Laser transmitters
- H04B10/505—Laser transmitters using external modulation
- H04B10/5057—Laser transmitters using external modulation using a feedback signal generated by analysing the optical output
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/50—Transmitters
- H04B10/58—Compensation for non-linear transmitter output
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/03—Suppression of nonlinear conversion, e.g. specific design to suppress for example stimulated brillouin scattering [SBS], mainly in optical fibres in combination with multimode pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0427—Electrical excitation ; Circuits therefor for applying modulation to the laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06233—Controlling other output parameters than intensity or frequency
- H01S5/06246—Controlling other output parameters than intensity or frequency controlling the phase
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/25—Arrangements specific to fibre transmission
- H04B10/2507—Arrangements specific to fibre transmission for the reduction or elimination of distortion or dispersion
- H04B10/2537—Arrangements specific to fibre transmission for the reduction or elimination of distortion or dispersion due to scattering processes, e.g. Raman or Brillouin scattering
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Signal Processing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Optics & Photonics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Multimedia (AREA)
- Optical Communication System (AREA)
- Semiconductor Lasers (AREA)
Description
1357229 九、發明說明: 【發明所屬之技術領域】 本發明係關於-種用於類比信號之光學傳輸系統,且特 定而言係關於一種直接調變式固態雷射。更特定而古,本 發明係關於使用一電子電路自一諸如半導體雷射等:幅調 變傳輸裝置提供一線性輸出,該振幅調變傳輸裝置具有一 因固有之非線性而自其輸入失真之輸出。藉由給該非線性 裝置之輸入施加一預失真信號來補償該非線性裝置之失 真:所選擇之預失真須使該非線性裝置之失真恢復該非失 真信號,從而能夠在1550奈米之長色散光纖媒體上發送。 【先前技術】 據認為,使用一電信號直接調變一發光二極體(led)或半 導體雷射之類比強度係此項技術中習知用於在光纖上傳輸 諸如音頻和視頻等類比信號之最簡單方法之一。雖然此類 類比技術具有其頻寬要求明顯小於數位脈衝編碼調變或類 比或脈衝頻率調變之優點,但振幅調變可受到雜訊和光源 非線性之影響。 出於此原因,直接調變技術一直與13 10奈米雷射結合使 而該類1310奈米雷射僅應用於使用零色散光纖鏈路之 短傳輸鏈路。對於都會區(metr〇)及長距離光纖傳輸鏈路中 之應用而言,鏈路之低損耗需要使用外部調變式1550奈米 雷射,但此類外部調變技術即複雜又昂貴。因此,本發明 擬解決之問題係提供一種用於直接調變一 155〇奈米雷射之 3單且低成本系統,以便可在都會區(metr〇)和長距離光學 100050-1000830.doc 1357229 網路中使用類比光學輸出。 已知,1550奈米雷射之直接調變用於數位光學傳輸系統 中,例如稠密分波多工系統等。 在先則技術中,尚不知存在可供155〇奈米類比光學傳輸 系統使用的合適之低頻擾雷射。一種低頻擾雷射係數位光 學傳輸系統中使用之外部腔型雷射,該種雷射市面上有售。 一 1550奈米類比光學傳輸系統除需要低頻擾特性外尚 須具有高線性。某些類比發射機中固有之失真會阻礙一線 性電調變信號以線性方式轉變成一光學信號,且會導致該 信號發生失真^該些效應對於需要卓越之線性來防止通道 相互干擾之多通道視頻傳輸而言尤其不利。高度線性化之 類比光學系統在商業電視傳輸、CATV、交作式電視及視頻 電話傳輸中具有廣泛應用。 人們已對光學及其它非線性發射機之線性化進行一段時 間之研究,但提出之解決方案均存在實際缺陷。大多數應 用所具有之頻寬對於實際用途而言均太大。前饋技術需要 複雜之系統組件,例如光功率組合器及多個光源。准光學 則饋技術亦存在類似之複雜性問題,且進一步需要相互區 配極為精確之部件。 過去一直沿用之一種用於減少雷射或其它非線性裴置中 固有失真之方法係實施預失真。在此技術令,將一調變信 號與一振幅相等於該非線性裝置内之固有失真但正負號相 反之信號相組合。當該非線性裝置調變該組合信號時,該 組合信號之預失真會絲該裝置之0有失真並僅傳輸該源 l〇005〇.l〇〇〇83〇.d〇c 1357229 信號之線性部分。該預失真信號通常習係輸入基頻之加/減 組合形式,其原因在於該些互調變產物構成類比信號傳輸 中最肥沃之失真源。舉例而言,在有線電視之顺言號分配 中’-敎頻帶上通常具有多達4G個頻率,因&,該些頻 率極有可能產生二階和三階互調擎產物。 該些預失真技術一直用於現有1310奈米光學發射機中, 第6,288,814號美國專利6對此μ舉例說明該專利以引 用方式併入本文令。 某些早期之預失真技術通常係將一輸入信號分成兩個或 更多個電路徑並在-個或多個與該㈣性傳輸裝置中固有 失真相似之路徑上產生預失真。所產生之預失真係該非線 性裝置固有失真之反轉’並且當與該輸人再組合時可用於 消除該裝置固有失真之影響。 、 在再組合該些信號並發送至該非線性裝置供調變之前, 可使用衰減將預失真振幅匹配於裝置固有失真特性之振 幅。然而,由於非線性裝置之振幅和相位失真特性通常相 依於調變信號之頻率,因此該方法具有粗糙性缺陷。較新 之技術可提供對該些相依於頻率之非線性進行補償之手 段》 若忽略糾正失真之頻率相依性,所導致之結果對於諸多 系統及頻寬相對窄之信號而言尚可容忍,但當將一τν電俨 號轉變為一用於電纜傳輸之光學信號時,則變得尤其廚 煩。此等用於有線電視之信號可具有4〇或更多個輪入頻 率’所有該些頻率均需具有高品質之振幅調變信號1於 100050-1000830.doc 1357229 該“號之傳輸裝置必須具有一格外高之線性度β 先進之多路徑失真電路較為靈活,且可極有效地將多種 非線性裝置之輸出線性化。頒予Biauveit等人之第4 992 754 號美國專利即披露一種此類多路徑預失真電路。該電路能 夠產生頻率專有之失真產物用來補償相依於頻率之非線 性,並用於需要一格外高線性度之應用,例如有線電視應 用。 雖然多路徑預失真電路可廣泛用於諸多應用中,但該等 電路之設計卻相當複雜。此複雜性在電路中之表現係該等 電路對於僅需要中等線性化之應用而言過於昂貴。熟悉此 項技術者會賞識一種供有限應用使用之設計相對簡單之低 成本電路,且假如此一電路可使用現信號傳輸應用中常用 之低成本組件製作而成則更佳。 本文所述之電路可產生相依於頻率之三階失真。簡單之 三階失真(例如一理想型二極體所產生之三階失真)具有該 失真係真實且不相依於頻率之性質。然而,許多非線性發 射機或放大器包含諸如電感、電容或延遲等無功元件,該 二元件可導致裝置產生相依於輸入和輸出頻率及失真頻率 之失真。頒予Nazarathy之第5,161,044號美國專利揭示了一 種该專利案圖15中所示之電路,該電路可產生基本真實之 不相依於頻率之預失真。出於偏壓目的並為了阻斷DC和AC 電流’ Nazarathy所揭示之電路中添加了電容器和電感器。 」而’對於母一輸入頻率集合而言,Nazarathy所揭示之電 路可能不具有振幅實質上相等且正負號相反於非線性裝置 100050-1000830 ,joc 所產生失真的正確相位或頻率相依性。 因此’本發明即旨在解決該些及其它在運作1550奈米雷 射類比光學傳輸系統中所發現之困難。 【發明内容】 本發明之一目的係提供一種使用一直接調變式雷射之改 良型光學傳輸系統。 本發明之另一目的係提供一種在155〇奈米類比光學傳輸 系統中使用之低頻擾雷射。 本發明之再一目的係提供一種在155〇奈米類比光學傳輸 系統中使用之預失真電路。 本發明之再一目的係提供一種適合於長距離色散光纖媒 體之低頻擾高線性類比光學傳輪系統。 本發明之再一目的係提供一種適合在長距離色散光纖媒 體之類比光學傳輸系統中用於控制一低頻擾雷射之回饋電 路。 本發明還有-目的係提供—種在—寬頻類比光學傳輸系 統中使用之直接調變和失真補償方法。 本發明之特點 簡要並概括而言,本發明提供:一種供在包括一類比信 號輸入之色散光纖鍵路上使用之光學傳輸系統;—種低頻 擾雷射;一種用於直接調變該雷射之調變電路;及一種用 於減少+導體雷射中相依於頻率之失真分量之預失真電 路0 本發明進-步提供-種低成本直接調變技術,該技術較 100050-1000830.doc 1357229 佳包括一預失真電路,以減小一諸如雷射等非.線性裝置中 所產生之二階或更高階失真產物。 在本發明之一態樣中,該低頻擾雷射係一在“C頻帶”1530 奈米至1570奈米範圍内運作之外部腔型雷射。 在本發明之另一態樣中,本發明提供一種用於減小類比 信號傳輸中失真之預失真電路,該預失真電路將一輸入調 變信號分成兩個電路徑,其中一個係主要路徑,另一個係 次要路徑。一位於該次要路徑上之預失真放大器產生該輸 入信號之二階或更高階互調變失真產物。將由此產生之失 真或預失真調整至振幅實質上相等且正負號相反於被施以 該仏號之非線性調變裝置中所固有之失真。調整預失真信 號之振幅和相位’以匹配該非線性裝置對失真之頻率相依 性。該些信號之相位係藉由電路徑之一中的一延遲或相位 調整疋件實施同步。然後’對主要和次要信號實施重組, 產生一包括互調變產物失真之單一調變信號。藉此,該預 失真電路藉由消除非線性發射裝置内固有之失真而基本上 將調變信號之傳輸線性化,從而使類比信號適合在色散光 纖鏈路上傳輸。 藉由閱讀包括[實施方式]在内之本發明揭示内容及親身 實踐本發明’熟悉此項技術者極易發現本發明之其它目 的、優點和新賴特點。雖然下文將參照較佳實施例來說明 本發明’但應理解:本發明非限於該些較佳實施例。熟悉 此項技術之普通技術人員藉由閱讀本文中之教示將會聯想 出本發明在其它領域中之其它應用、修改和實施例,而該 100050-1000830.doc 1357229 些應用 '修改和實施例皆屬於本文所揭示並要求權利之發 明範圍内且本發明可具有與之相關之明顯實用性。 【實施方式】 下文將不闡述本發明之細節,包括其實例性方面和實施 例。在附圖和下文之詳細說明中,使·用相同之參考編號指 代相同或功能上相似之元件’且該些參考編號旨在以極度 簡化之圖示方式圖解說明實例性實施例之主要特點。況 且’圖式即非意欲描繪出實際實施例之每一特點,亦非意 欲描繪出所繪示元件之相對尺寸,因此,該些圖式未按比 例繪製。 圖1係本發明光學傳輸系統100之一極度簡化之方塊圖。 圖中顯示有一類比RF信號輸入源101,例如一包含複數個不 同通k彳s號之寬頻信號。RF輸入被施加至執行......之RF調 節電路102eRF調節電路102之輸出被施加至一圖4中將予以 更詳細闡述之預失真電路1〇3。預失真電路1〇3將一控制信 號提供至一DC雷射驅動器或控制電路1〇4,該信號被施加 至雷射105並控制光學輸出丨〇7。數位控制電路丨〇6亦控制著 控制電路104和雷射1〇5。 圖2係圖i所示系統中所用之半導體雷射之一剖面視圖。 圖3係先前技術中習知之外部腔型雷射之一方塊圖。該外 部反射器在光學上即可為窄帶亦可為寬頻。其可由鏡面、 衍射光柵、光纖布拉格光柵或任何其它合適之技術構建而 成。雷射與該外部反射器之間的傳播即可在自由空間内, 亦可局限在一波導内。 100050-1000830.doc 11 - 1357229 調變電路可進一步包括一低頻信號調變器,其施加—低 頻仏號至該雷射之輸入端以增大該色散光纖鏈路之受激布 裏淵散射臨限值。 圖4a和4b係圖1所示系統中所用預失真電路之一當前較 佳實施例之極度簡化之電路圖。 一實例性傳輸裝置可係一由該輸出信號調變之半導體雷 射或LED。 許多改變和修改對熟悉此項技術之人員係顯而易見且 該些改變和修改並不背離本發明之精神和範嘴。舉例而 言,雖然本文以一用於調變一雷射或發光二極體之τν信號 為为景來闡述及圖解說明本發明,但其它諸如放大器等非 線性裝置亦可具有此技術可基本消除之固有失真。對主要 和次要路徑中信號之相對相位之微調在圖示實施例中係在 次要路徑中實施’但亦可在實施粗調之主要路徑中進行。 微調較佳在次要路徑中進行,其原因係主要路徑中之此種 延遲可能會對此路徑造成不適當之阻礙。 圖5圖解說明預失真對一調變信號波形之影響。圖之上半 部分表示本發明處理一 RF信號系統中之分量順序,該圖下 半部分中之相應電壓圖表示作為輸入之一函數之輸出電 壓。 圖6係一用於調整雷射溫度以保證雷射在一最小或最佳 失真作業點下運作之負回饋迴路之方塊圖。 圖6圖解說明靠近該雷射使用一溫度控制器來控制該雷 射之溫度’以最大限度減小光纖鏈路接收機端存在之失 100050-looog30.doc • 12- 1357229 真》該溫度控制器通常係一此項技術中習知之叫如敎電 冷卻器。有數個與-雷射相關之物理參數係隨溫度而變。 在此等變數係至關重要之應用中,無論外部環境溫度如 何,能夠控制該雷射之實際溫度甚為重要。本發明使用一 光電二極體監視該雷射之輸出,並將該信號轉變為一控制 信號麵合至-雷射輸出監視控制電路,該電路包括一叙合 至該溫度控制器之負回饋控制電路,以響應該雷射之輸出 調整該雷射之溫度。 本發明技術和設備之各個態樣可構建在數位電路中,或 構建在電腦硬體、韌體、軟體或其組合中。本發明之電路 可構建在以有形方式包含在一機器可讀存儲裝置中供一可 程式規劃處理器執行之電腦產品中,或構建在位於一網路 節點或網址上可自動或根據請求下載至電腦產品之軟體 上。前述技術可由下述裝置實施:例如,一單一中央處理 窃、一多處理器、一個或多個數位信號處理器、邏輯閘之 閘陣列、或用於藉由作用於輸入資料並產生輸出之方式執 行系列仏號或指令程式來執行本發明功能之硬佈線邏輯 電路。該些方法可有利地構建在可執行於一程式規劃系統 上之一個或多個電腦程式中,該可程式規劃系統包括:至 少一耦合用於自一資料存儲系統接收資料和指令並向該資 料存儲系統發送資料和指令之可程式規劃處理器、至少一 輸入/輸出裝置及至少一輸出裝置。可使用一高階程序或面 向對象之程式規劃語言,或組合或機器語言(若需要)構建每 一電腦程式;在任何情況下,該語言均可係編譯或解譯語 100050-100Q830.doc 1357229 言。合適之處理器包括,舉例而言,通用及專用微處理器。 般而5 ’一處理器將自唯讀記憶體及/或隨機存取記憶體 接收指令和資料。適合以有形方式包含電腦程式指令和資 料之存儲裝置包括所有形式之非揮發性記憶體,其中包 括舉例而D半導體裝置,例如EpR⑽、⑽及快 閃記憶體裝置;磁碟,例如内部硬磁碟及可拆卸式磁碟; 磁光碟;及CD.ROM光碟《前述任何裝置均可由專門設計 之專用積體電路(ASICS)加以補充或含納於該些專用積體 電路中。 應瞭解,上述每一元件或兩個或更多個元件亦可有效應 用於不同於上述類型之其它類型之結構中。 雖然本文以一光學傳輸系統為實施例圖解說明並闡述本 發明,但本發明並不意欲受限於所示细節其原因係在不 以任何方式背離本發明精神之前提下可對本發明做各種修 改和結構改變。 無需再做進一步分析,上述内容如此全面地揭示本發明 之要旨,以使其他人藉由應用現有知識即可在不省略自先 月1J技術角度看合理構成本發明一般或特定方面之基本特徵 之前提下輕易地將本發明修改應用於各種應用中,因此, 此類修改應該且擬涵蓋在隨附申請專利範圍之等效意義和 範圍内。 【圖式簡單說明】 結合附圖參閱下文之詳細說明將會更好更全面地理解本 發明之該些和其它特點和優點。 100050-1000830.doc ^57229 圖1係一本發明光學傳輸系統之極度簡化之方塊圖; 圖2係圖1所示系統中使用之半導體雷射之剖面視圖; 圖3係先前技術中習知之外部腔型雷射之方塊圖; 圖4a和4b係圖1所示系統中使用的一預失真電路之一當 前較佳實施例之方塊圖; 圖5係預失真對一調變信號波形所產生作用之圖解說 B月;及
圖6係一用於調整雷射溫度以保證雷射在一最小或最佳 失真作業點運作之負回饋迴路之方塊圖D 本發明之新穎特點和特徵陳述於隨附申請專利範圍中。 然而,藉由結合附圖來閱讀和參閱一具體實施例之詳細說 明可最佳地理解本發明自身及其其它特點和優點。 【主要元件符號說明】 100 完整的發射機總成 101 RF輸入 102 RF調節電路 103 預失真電路 104 DC雷射控制裝置 105 雷射 106 數位控制電路 107 光學輸出 100050-1000830.doc
Claims (1)
1357229 十、申請專利範圍: 1. 一種用於產生一調變信號供在一色散光纖鏈路上發送至 一遠端接收機之光學發射機,其包括: 一輸入端,其用於接收一寬頻類比射頻信號輸入; 一半導體雷射’其用於產生一供在一光纖上發送的光 學信號;及 一調變電路,其用於使用該寬頻類比射頻信號直接調 變該半導體雷射,該調變電路包括一預失真電路以減小 該光纖鏈路接收機端處所存在信號内之失真, 其中該調變電路進一步包括一低頻信號調變器,以增 大該色散光纖鏈路之受激布襄淵散射臨限值。 2. 如請求項1之發射機,其中該半導體雷射係一外部腔型雷 射。 3. 如請求項1之發射機,其中該半導體雷射之光學輸出波長 位於1530至1570奈米範圍内。 4. 如請求項1之發射機,其中該寬頻類比射頻信號輸入具有 一大於一倍頻程之頻寬並包括複數個不同之資訊載送通 道。 5. 如請求項1之發射機,其争該預失真電路補償該半導體雷 射之非線性響應。 6. =請求項!之發射機,其中該預失真電路補償在該接收機 端處所測定的因ϋ過-色散光纖鏈路發送一調頻光學信 號而產生之失真。 7. 如請求項1之發射機,其令該預失真電路可選擇性調整, 100050-1000830.doc 1357229 以依據該鏈路之長度補償由該色散光纖鏈路產生之失真。 8. 如請求項1之發射機’其中該預失真電路依據該鏈路之長 度補償由該色散光纖鏈路產生之失真。 9. 如請求項1之發射機’其中該預失真電路包括沿該寬頻類 比射頻信號路徑依序設置之複數個線内失真產生電路元 件’以便藉由加性組合來自線内失真產生電路元件組合之 失真分量’而在該電路内合成一適當之真實和虛失真,該 真實和虛失真在程度上足以實質上消除或減小因該半導 體雷射非線性而產生之失真;且其中在該線内失真產生電 路元件内該寬頻類比射頻信號不分離成一基頻信號路徑 和一單獨不同之失真產生路徑。 10. 如請求項1之發射機,其中該調變電路係一AM_VSB調變 器。 如請求項1之發射機,其中該調變電路係一正交振幅調變 器。 如請求項丨之發射機,其進一步包括連接至該半導體雷射 輸出之輸出功率調整構件’該構件用於㈣該光學載波信 號之平均輸出功率,以使該平均輸出功率低於該色散光纖 鏈路之受激布裏淵散射臨限值之功率。 如請求項12之發射機,其中該輸出功率調整構件係一相位 調變器。 14·如請求項12之㈣機,其中該輸出功率調整構件係一銳酸 鋰相位調變器。 15.如請求項12之發射機,其中該輸出功率調整構件係一壓電 100050-1000830.doc -2- 1357229 相位調變器。 16.—種用於產生一調變光學信號供在一色散光纖鏈路上發 送至一遠端接收機之光學發射機,其包括: 一輸入端,其用於接收一寬頻類比射頻信號輸入; 一半導體雷射,其用於產生一供在一光纖上發送的光 學信號; 一調變電路,其用於使用該寬頻類比射頻信號以直接 地調變該半導體雷射; 一接近該半導體雷射的溫度感測器,其用於監視該半 導體雷射的溫度;及 一輕合至該溫度感測器之控制電路,其用於響應該半 導體雷射之一輸出特徵來調整該半導體雷射之溫度, 其中該調變電路進一步包括一低頻信號調變器,以增 大該色散光纖鏈路之受激布襄淵散射臨限值。 17·如請求項16之發射機,其中該半導體雷射之輸出特徵係與 該半導體雷射輸入信號呈函數關係的該光學信號之線性。 18. 如請求項16之發射機,其中該半導體雷射之輸出特徵係藉 由以下方式測得:使用一導頻音作為該半導體雷射之一輸 入並在該輸出處檢查互調變產物以確定與該半導體雷射 輸入信號呈函數關係的該輸出信號之線性。 19. 如請求項16之發射機,其中該半導體雷射係一外部腔型雷 射。 20. 如請求項16之發射機’其中該半導體f射之光學輸出波長 位於1530至1570奈米範圍内。 21_如請求項16之發射機,其中該寬頻類比射頻信號輸入具有 100050-1000830.doc 1357229 一大於一倍頻程之頻寬並包括複數個不同之資訊載送通 道。 22. —種用於產生一調變光學信號供在一色散光纖鏈路上發 送至一遠端接收機之光學發射機,其包括: 一輸入端,其用於接收一寬頻類比射頻信號輸入; 一半導體雷射,其用於產生一供在一光纖上發送的光 學信號; 一調變電m於使用該寬頻類比射頻信號直接調 變該半導體雷射;及 連接至該半導體雷射輸出之輸出功率調整構件,該構 件用於調整該光學餘㈣之平均輸出功率,以使該平 均輸出功率低於該色散光纖鏈路受 <又激布爰淵散射臨限 值之功率, 其中該調變電路進一步包括一低頻信號調變器… 大該色散光纖鏈路之受激布裏淵散射臨限值。 0 23. 如請求項22之發射機,其中該輸出功率㈣構 調變器。 1 24. 如請求項22之發射機,其中該輸出功率㈣ 鋰相位調變器。 π现以 25. 如請求項22之發射機,其中該輪 相位調變器。 力丰調整構件係一壓電 26. 如請求項22之發射機,其中該半導♦ 射。 田射係—外部腔型雷 27·如請求項22之發射機,其中該半 田射之先學輪出波長 I00050-I000830.doc -4- 1357229 位於1530至1570奈米範圍内。 28.如請求項22之發射機,其中該寬頻類比射頻信號輸入具有 一大於一倍頻程之頻寬並包括複數個不同之資訊載送通 道0 100050-1000830.doc
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- 2005-03-15 US US11/080,721 patent/US7466925B2/en not_active Expired - Fee Related
- 2005-03-18 TW TW094108415A patent/TWI357229B/zh not_active IP Right Cessation
- 2005-03-18 KR KR1020050022777A patent/KR20060044429A/ko not_active Application Discontinuation
- 2005-03-18 CN CN2005100554836A patent/CN1694385B/zh not_active Expired - Fee Related
- 2005-03-22 JP JP2005081098A patent/JP2005269658A/ja active Pending
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CN1694385B (zh) | 2011-05-18 |
JP2005269658A (ja) | 2005-09-29 |
KR20060044429A (ko) | 2006-05-16 |
US20050271396A1 (en) | 2005-12-08 |
TW200608719A (en) | 2006-03-01 |
US7466925B2 (en) | 2008-12-16 |
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