TWI348200B - Method of forming strained si/sige on insulator with silicon germanium buffer - Google Patents
Method of forming strained si/sige on insulator with silicon germanium bufferInfo
- Publication number
- TWI348200B TWI348200B TW094118434A TW94118434A TWI348200B TW I348200 B TWI348200 B TW I348200B TW 094118434 A TW094118434 A TW 094118434A TW 94118434 A TW94118434 A TW 94118434A TW I348200 B TWI348200 B TW I348200B
- Authority
- TW
- Taiwan
- Prior art keywords
- sige
- insulator
- silicon germanium
- germanium buffer
- forming strained
- Prior art date
Links
- 229910000577 Silicon-germanium Inorganic materials 0.000 title 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 title 1
- 239000012212 insulator Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/710,255 US6893936B1 (en) | 2004-06-29 | 2004-06-29 | Method of Forming strained SI/SIGE on insulator with silicon germanium buffer |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200601420A TW200601420A (en) | 2006-01-01 |
TWI348200B true TWI348200B (en) | 2011-09-01 |
Family
ID=34573464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094118434A TWI348200B (en) | 2004-06-29 | 2005-06-03 | Method of forming strained si/sige on insulator with silicon germanium buffer |
Country Status (7)
Country | Link |
---|---|
US (1) | US6893936B1 (zh) |
EP (1) | EP1779422A4 (zh) |
JP (1) | JP2008505482A (zh) |
KR (1) | KR20070032649A (zh) |
CN (1) | CN1954421A (zh) |
TW (1) | TWI348200B (zh) |
WO (1) | WO2006011912A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI457985B (zh) * | 2011-12-22 | 2014-10-21 | Nat Inst Chung Shan Science & Technology | Semiconductor structure with stress absorbing buffer layer and manufacturing method thereof |
Families Citing this family (43)
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GB9618897D0 (en) | 1996-09-10 | 1996-10-23 | Bio Rad Micromeasurements Ltd | Micro defects in silicon wafers |
FR2773261B1 (fr) | 1997-12-30 | 2000-01-28 | Commissariat Energie Atomique | Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions |
US6717213B2 (en) * | 2001-06-29 | 2004-04-06 | Intel Corporation | Creation of high mobility channels in thin-body SOI devices |
GB0308182D0 (en) * | 2003-04-09 | 2003-05-14 | Aoti Operating Co Inc | Detection method and apparatus |
US7259084B2 (en) * | 2003-07-28 | 2007-08-21 | National Chiao-Tung University | Growth of GaAs epitaxial layers on Si substrate by using a novel GeSi buffer layer |
FR2861497B1 (fr) * | 2003-10-28 | 2006-02-10 | Soitec Silicon On Insulator | Procede de transfert catastrophique d'une couche fine apres co-implantation |
US7495266B2 (en) * | 2004-06-16 | 2009-02-24 | Massachusetts Institute Of Technology | Strained silicon-on-silicon by wafer bonding and layer transfer |
DE102004062290A1 (de) * | 2004-12-23 | 2006-07-06 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterchips |
US20070000434A1 (en) * | 2005-06-30 | 2007-01-04 | Accent Optical Technologies, Inc. | Apparatuses and methods for detecting defects in semiconductor workpieces |
US20070010070A1 (en) * | 2005-07-05 | 2007-01-11 | International Business Machines Corporation | Fabrication of strained semiconductor-on-insulator (ssoi) structures by using strained insulating layers |
TWI439684B (zh) * | 2005-07-06 | 2014-06-01 | Nanometrics Inc | 具自晶圓或其他工件特定材料層所發射光致發光信號優先偵測之光致發光成像 |
TWI391645B (zh) * | 2005-07-06 | 2013-04-01 | Nanometrics Inc | 晶圓或其他工作表面下污染物及缺陷非接觸測量之差分波長光致發光 |
US20070008526A1 (en) * | 2005-07-08 | 2007-01-11 | Andrzej Buczkowski | Apparatus and method for non-contact assessment of a constituent in semiconductor workpieces |
FR2889887B1 (fr) * | 2005-08-16 | 2007-11-09 | Commissariat Energie Atomique | Procede de report d'une couche mince sur un support |
FR2891281B1 (fr) * | 2005-09-28 | 2007-12-28 | Commissariat Energie Atomique | Procede de fabrication d'un element en couches minces. |
DE102005051332B4 (de) * | 2005-10-25 | 2007-08-30 | Infineon Technologies Ag | Halbleitersubstrat, Halbleiterchip, Halbleiterbauteil und Verfahren zur Herstellung eines Halbleiterbauteils |
FR2893446B1 (fr) * | 2005-11-16 | 2008-02-15 | Soitec Silicon Insulator Techn | TRAITEMENT DE COUCHE DE SiGe POUR GRAVURE SELECTIVE |
US7656049B2 (en) * | 2005-12-22 | 2010-02-02 | Micron Technology, Inc. | CMOS device with asymmetric gate strain |
US20070176119A1 (en) * | 2006-01-30 | 2007-08-02 | Accent Optical Technologies, Inc. | Apparatuses and methods for analyzing semiconductor workpieces |
US7494856B2 (en) * | 2006-03-30 | 2009-02-24 | Freescale Semiconductor, Inc. | Semiconductor fabrication process using etch stop layer to optimize formation of source/drain stressor |
DE102006019934B4 (de) * | 2006-04-28 | 2009-10-29 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Ausbildung eines Feldeffekttransistors |
US7897493B2 (en) * | 2006-12-08 | 2011-03-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Inducement of strain in a semiconductor layer |
FR2910179B1 (fr) | 2006-12-19 | 2009-03-13 | Commissariat Energie Atomique | PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART |
CN100447950C (zh) * | 2007-01-26 | 2008-12-31 | 厦门大学 | 低位错密度锗硅虚衬底的制备方法 |
US8101501B2 (en) * | 2007-10-10 | 2012-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
US7524740B1 (en) | 2008-04-24 | 2009-04-28 | International Business Machines Corporation | Localized strain relaxation for strained Si directly on insulator |
FR2947098A1 (fr) | 2009-06-18 | 2010-12-24 | Commissariat Energie Atomique | Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince |
WO2011027871A1 (ja) | 2009-09-04 | 2011-03-10 | 住友化学株式会社 | 半導体基板、電界効果トランジスタ、集積回路、及び半導体基板の製造方法 |
CN101882624B (zh) * | 2010-06-29 | 2011-09-14 | 清华大学 | 在绝缘衬底上形成有高Ge应变层的结构及形成方法 |
CN102315246B (zh) * | 2010-06-30 | 2013-03-13 | 中国科学院上海硅酸盐研究所 | 一种弛豫SiGe虚拟衬底及其制备方法 |
CN103717351A (zh) * | 2011-08-01 | 2014-04-09 | 巴斯夫欧洲公司 | 一种制造半导体装置的方法,其包括在具有3.0至5.5的pH值的CMP组合物的存在下化学机械抛光元素锗及/或Si1-xGex 材料 |
CN102427068B (zh) * | 2011-12-02 | 2014-06-18 | 中国科学院上海微***与信息技术研究所 | 单片集成具有晶格失配的晶体模板及其制作方法 |
CN103165511B (zh) * | 2011-12-14 | 2015-07-22 | 中国科学院上海微***与信息技术研究所 | 一种制备goi的方法 |
CN103165512A (zh) * | 2011-12-14 | 2013-06-19 | 中国科学院上海微***与信息技术研究所 | 一种超薄绝缘体上半导体材料及其制备方法 |
US8518807B1 (en) * | 2012-06-22 | 2013-08-27 | International Business Machines Corporation | Radiation hardened SOI structure and method of making same |
KR101381056B1 (ko) * | 2012-11-29 | 2014-04-14 | 주식회사 시지트로닉스 | Ⅲ-질화계 에피층이 성장된 반도체 기판 및 그 방법 |
US9716176B2 (en) * | 2013-11-26 | 2017-07-25 | Samsung Electronics Co., Ltd. | FinFET semiconductor devices including recessed source-drain regions on a bottom semiconductor layer and methods of fabricating the same |
US9343303B2 (en) * | 2014-03-20 | 2016-05-17 | Samsung Electronics Co., Ltd. | Methods of forming low-defect strain-relaxed layers on lattice-mismatched substrates and related semiconductor structures and devices |
WO2016109502A1 (en) * | 2014-12-31 | 2016-07-07 | Sunedison Semiconductor Limited | Preparation of silicon-germanium-on-insulator structures |
KR102257423B1 (ko) | 2015-01-23 | 2021-05-31 | 삼성전자주식회사 | 반도체 기판 및 이를 포함하는 반도체 장치 |
WO2016196060A1 (en) * | 2015-06-01 | 2016-12-08 | Sunedison Semiconductor Limited | A method of manufacturing semiconductor-on-insulator |
CN114000120B (zh) * | 2022-01-05 | 2022-03-15 | 武汉大学 | 一种基于cvd法的应变金刚石生长掺杂方法 |
CN114000121B (zh) * | 2022-01-05 | 2022-03-15 | 武汉大学 | 一种基于mbe法的应变金刚石生长掺杂方法及外延结构 |
Family Cites Families (11)
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FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
US5906951A (en) * | 1997-04-30 | 1999-05-25 | International Business Machines Corporation | Strained Si/SiGe layers on insulator |
US5882987A (en) * | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
US6633066B1 (en) * | 2000-01-07 | 2003-10-14 | Samsung Electronics Co., Ltd. | CMOS integrated circuit devices and substrates having unstrained silicon active layers |
JP2004507084A (ja) * | 2000-08-16 | 2004-03-04 | マサチューセッツ インスティテュート オブ テクノロジー | グレーデッドエピタキシャル成長を用いた半導体品の製造プロセス |
US6524935B1 (en) * | 2000-09-29 | 2003-02-25 | International Business Machines Corporation | Preparation of strained Si/SiGe on insulator by hydrogen induced layer transfer technique |
US6603156B2 (en) | 2001-03-31 | 2003-08-05 | International Business Machines Corporation | Strained silicon on insulator structures |
US6953736B2 (en) * | 2002-07-09 | 2005-10-11 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Process for transferring a layer of strained semiconductor material |
FR2842349B1 (fr) * | 2002-07-09 | 2005-02-18 | Transfert d'une couche mince a partir d'une plaquette comprenant une couche tampon | |
FR2844634B1 (fr) * | 2002-09-18 | 2005-05-27 | Soitec Silicon On Insulator | Formation d'une couche utile relaxee a partir d'une plaquette sans couche tampon |
US6812116B2 (en) * | 2002-12-13 | 2004-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a wafer with strained channel layers for increased electron and hole mobility for improving device performance |
-
2004
- 2004-06-29 US US10/710,255 patent/US6893936B1/en not_active Expired - Fee Related
-
2005
- 2005-02-16 KR KR1020067023687A patent/KR20070032649A/ko not_active Application Discontinuation
- 2005-02-16 EP EP05713741A patent/EP1779422A4/en not_active Withdrawn
- 2005-02-16 CN CNA2005800153595A patent/CN1954421A/zh active Pending
- 2005-02-16 JP JP2007519189A patent/JP2008505482A/ja active Pending
- 2005-02-16 WO PCT/US2005/005085 patent/WO2006011912A1/en active Application Filing
- 2005-06-03 TW TW094118434A patent/TWI348200B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI457985B (zh) * | 2011-12-22 | 2014-10-21 | Nat Inst Chung Shan Science & Technology | Semiconductor structure with stress absorbing buffer layer and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
EP1779422A4 (en) | 2007-08-01 |
TW200601420A (en) | 2006-01-01 |
WO2006011912A1 (en) | 2006-02-02 |
US6893936B1 (en) | 2005-05-17 |
JP2008505482A (ja) | 2008-02-21 |
EP1779422A1 (en) | 2007-05-02 |
CN1954421A (zh) | 2007-04-25 |
KR20070032649A (ko) | 2007-03-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |